US20150194442A1 - Group iii nitride composite substrate and method for manufacturing the same, and method for manufacturing group iii nitride semiconductor device - Google Patents

Group iii nitride composite substrate and method for manufacturing the same, and method for manufacturing group iii nitride semiconductor device Download PDF

Info

Publication number
US20150194442A1
US20150194442A1 US14/419,315 US201314419315A US2015194442A1 US 20150194442 A1 US20150194442 A1 US 20150194442A1 US 201314419315 A US201314419315 A US 201314419315A US 2015194442 A1 US2015194442 A1 US 2015194442A1
Authority
US
United States
Prior art keywords
group iii
iii nitride
substrate
film
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
US14/419,315
Other versions
US9917004B2 (en
Inventor
Keiji Ishibashi
Akihiro Hachigo
Yuki Hiromura
Naoki Matsumoto
Seiji Nakahata
Fumitake Nakanishi
Takuya Yanagisawa
Koji Uematsu
Yuki SEKI
Yoshiyuki Yamamoto
Yusuke Yoshizumi
Hidenori Mikami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2013029114A external-priority patent/JP6248395B2/en
Priority claimed from JP2013029115A external-priority patent/JP6322890B2/en
Priority claimed from JP2013029125A external-priority patent/JP6146042B2/en
Priority claimed from JP2013179839A external-priority patent/JP6232853B2/en
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to US14/419,315 priority Critical patent/US9917004B2/en
Assigned to SUMITOMO ELECTRIC INDUSTRIES, LTD. reassignment SUMITOMO ELECTRIC INDUSTRIES, LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MIKAMI, HIDENORI, NAKAHATA, SEIJI, SEKI, YUKI, UEMATSU, KOJI, YAMAMOTO, YOSHIYUKI, YOSHIZUMI, YUSUKE, MATSUMOTO, NAOKI, NAKANISHI, FUMITAKE, YANAGISAWA, TAKUYA, HIROMURA, YUKI, HACHIGO, AKIHIRO, ISHIBASHI, KEIJI
Publication of US20150194442A1 publication Critical patent/US20150194442A1/en
Application granted granted Critical
Publication of US9917004B2 publication Critical patent/US9917004B2/en
Active legal-status Critical Current
Adjusted expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/06—Interconnection of layers permitting easy separation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68345—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self supporting substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24298—Noncircular aperture [e.g., slit, diamond, rectangular, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24322—Composite web or sheet
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24322—Composite web or sheet
    • Y10T428/24331—Composite web or sheet including nonapertured component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y10T428/24967—Absolute thicknesses specified
    • Y10T428/24975—No layer or component greater than 5 mils thick
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31—Surface property or characteristic of web, sheet or block

Definitions

  • Japanese Patent Laying-Open No. 2006-210660 discloses a method for manufacturing a semiconductor substrate including the steps of: implanting ions into a front surface and its vicinity of a first nitride semiconductor substrate made from GaN, AlN, or the like; superposing a second substrate on the front surface of the first nitride semiconductor substrate; heat-treating the two substrates superposed on each other; and stripping most of the first nitride semiconductor substrate from the second substrate along a layer in which the ions are implanted.
  • a group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film.
  • the group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner.
  • the group III nitride film has a thickness of 10 ⁇ m or more.
  • a sheet resistance of a group III-nitride-film-side main surface of the group III nitride composite substrate is 200 ⁇ /sq (ohms per square) or less.
  • an area of a joined region joining the group III nitride film and the support substrate is 70% or more relative to an area of the main surface
  • a non-joined region failing to join the group III nitride film and the support substrate includes at least one non-joined partial region
  • the non-joined partial region may be a small non-joined partial region having a maximum size in radial direction of less than 20 mm.
  • the area of the joined region is a large area of 70% or more relative to the area of the main surface and the maximum size in radial direction of the non-joined partial region forming the non-joined region is a small size of less than 20 mm. Therefore, group III nitride semiconductor devices can be manufactured with a high yield.
  • a non-joined region failing to join the group III nitride film and the support substrate includes at least one non-joined partial region, and the non-joined partial region may be an inner non-joined partial region failing to abut on a perimeter of the main surface.
  • the non-joined partial region forming the non-joined region does not abut on the perimeter of the main surface. Therefore, group III nitride semiconductor devices can be manufactured with a high yield.
  • a joint interface between the group III nitride film and the support substrate includes an impurity containing metal, and the concentration of the impurity may be 1 ⁇ 10 10 cm ⁇ 2 or more.
  • the concentration of the impurity containing metal in the joint interface is 1 ⁇ 10 10 cm ⁇ 2 or more. Therefore, group III nitride semiconductor devices with a high joint strength can be manufactured with a high yield.
  • a method for manufacturing a group III nitride semiconductor device is a method for manufacturing a group III nitride semiconductor device using a group III nitride composite substrate of the above aspect, and includes the steps of: preparing the group III nitride composite substrate; and growing at least one group III nitride layer on the group III-nitride-film-side main surface of the group III nitride composite substrate.
  • This method for manufacturing a group III nitride semiconductor device includes these steps so that group III nitride semiconductor devices can be manufactured with a high yield.
  • a group III nitride composite substrate having a low sheet resistance and produced with a high yield and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate can be provided.
  • FIG. 1 is a schematic cross-sectional view showing an example of the group III nitride composite substrate according to the present invention.
  • FIG. 2 is a schematic cross-sectional view showing another example of the group III nitride composite substrate according to the present invention.
  • FIG. 3 is a schematic plan view showing a joined region and non-joined regions in the group III nitride composite substrate according to the present invention.
  • FIG. 4 is a schematic cross-sectional view showing an example of the method for manufacturing a group III nitride composite substrate according to the present invention.
  • FIG. 5 is a schematic cross-sectional view showing an example of the group III nitride semiconductor device produced by the method for manufacturing a group III nitride semiconductor device according to the present invention.
  • FIG. 12 is a schematic cross-sectional view showing an example of a method for manufacturing a group III nitride composite substrate according to the reference invention.
  • FIG. 14 is a schematic cross-sectional view showing still another example of the method for manufacturing a group III nitride composite substrate according to the reference invention.
  • FIG. 15 is a schematic cross-sectional view showing an example of the method for manufacturing a group III nitride semiconductor device according to the reference invention.
  • a group III nitride composite substrate 1 which is an embodiment of the present invention includes a group III nitride film 13 and a support substrate 11 formed from a material which is different in chemical composition from group III nitride film 13 .
  • group III nitride film 13 is joined to support substrate 11 in one of a direct manner and an indirect manner.
  • Group III nitride film 13 has a thickness of 10 ⁇ m or more.
  • a sheet resistance of a group III-nitride-film 13 -side main surface 13 m which is a main surface on the group III-nitride-film side, is 200 ⁇ /sq or less.
  • group III nitride film 13 has a thickness of 10 ⁇ m or more, and therefore, the sheet resistance of group III-nitride-film 13 -side main surface 13 m can be reduced to 200 ⁇ /sq or less.
  • group III nitride semiconductor devices can be manufactured with a high yield. Details will be described in the following.
  • Group III nitride composite substrate 1 of the present embodiment includes group III nitride film 13 , and support substrate 11 formed from a material different in chemical composition from group III nitride film 13 .
  • group III nitride film 13 may be doped with a conductivity improver impurity.
  • This conductivity improver impurity is not particularly limited. O (oxygen) atom, Si (silicon) atom, and the like are suitable since they are highly effective in improving the conductivity.
  • group III nitride composite substrate 1 of the present embodiment group III nitride film 13 is joined to support substrate 11 in one of a direct manner and an indirect manner.
  • the joint in a direct manner means that group III nitride film 13 and support substrate 11 are directly joined to each other without a separate element interposed therebetween.
  • a joint interface 100 is an interface formed by a main surface 13 n of group III nitride film 13 and a main surface 11 m of support substrate 11 that are joined to each other.
  • the joint in an indirect manner means that group III nitride film 13 and support substrate 11 are indirectly joined to each other with a separate element such as a joint film 12 for example interposed therebetween.
  • a separate element such as a joint film 12 for example interposed therebetween.
  • the joint interface varies depending on how the substrate and the film are bonded to each other as described below.
  • a first bonding method is as follows. As shown in FIGS. 2 and 4 , a joint film 12 a is formed on main surface 11 m of support substrate 11 and a joint film 12 b is formed on main surface 13 n of group III nitride film 13 . After this, a main surface 12 am of joint film 12 a and a main surface 12 bn of joint film 12 b are bonded to each other to thereby form joint film 12 into which joint film 12 a and joint film 12 b are integrated.
  • joint interface 100 is a surface formed by main surface 12 am of joint film 12 a and main surface 12 bn of joint film 12 b that are joined to each other in joint film 12 .
  • a second bonding method is as follows.
  • Joint film 12 is formed on main surface 11 m of support substrate 11 and thereafter the main surface of joint film 12 and main surface 13 n of group III nitride film 13 are bonded to each other.
  • joint interface 100 is a surface formed by the main surface of joint film 12 and main surface 13 n of group III nitride film 13 that are joined to each other.
  • a third bonding method is as follows.
  • Joint film 12 is formed on main surface 13 n of group III nitride film 13 , and thereafter the main surface of joint film 12 and main surface 11 m of support substrate 11 are bonded to each other.
  • joint interface 100 is a surface formed by the main surface of joint film 12 and main surface 11 m of support substrate 11 that are joined to each other.
  • Joint film 12 which may be included between group III nitride film 13 and support substrate 11 in group III nitride composite substrate 1 of the present embodiment is not particularly limited as long as the joint film serves to increase the strength with which group III nitride film 13 and support substrate 11 are joined.
  • the joint film may be SiO 2 film, Si 3 N 4 film, AlN film, Al 2 O 3 film, TiO 2 film, TiN film, Ga 2 O 3 film, W film, Mo film, Au—Sn film, or the like.
  • the thickness of joint film 12 is not particularly limited.
  • the thickness is preferably 0.05 ⁇ m or more, and more preferably 0.1 ⁇ m or more.
  • the thickness is preferably 5 ⁇ m or less, and more preferably 2 ⁇ m or less.
  • the thickness of group III nitride film 13 needs to be 10 ⁇ m or more, and is preferably 50 ⁇ m or more, and more preferably 100 ⁇ m or more.
  • the thickness of group III nitride film 13 is preferably 500 ⁇ m or less, and more preferably 250 ⁇ m or less.
  • group III nitride composite substrate 1 for the sake of improving device properties of a group III nitride semiconductor device (such as luminous efficiency of a light-emitting device, for example) that are achieved by reducing the sheet resistance of group III nitride composite substrate 1 , the sheet resistance of group ill-nitride-film 13 -side main surface 13 m of group III nitride composite substrate 1 needs to be 200 ⁇ /sq (ohms per square) or less, and is preferably 50 ⁇ /sq or less, and more preferably 10 ⁇ /sq or less.
  • group III nitride composite substrate 1 of the present embodiment group III nitride film 13 is bonded to support substrate 11 along the above-described joint interface 100 .
  • group III nitride composite substrate 1 in the present embodiment also has surface roughness of respective main surfaces of support substrate 11 , group III nitride film 13 , and joint films 12 , 12 a , 12 b , a main-surface through hole 13 h of group III nitride film 13 , non-uniformity of bonding, and the like.
  • joint interface 100 includes a joined region 100 b where group III nitride film 13 and support substrate 11 are joined to each other in either the direct manner or the indirect manner, and a non-joined region 100 n where group III nitride film 13 and support substrate 11 are not joined to each other in either the direct manner or the indirect manner.
  • the presence, respective positions, respective sizes, and respective areas of joined region 100 b and non-joined region 100 n in joint interface 100 of group III nitride composite substrate 1 in the present embodiment can be measured by means of an ultrasonic microscope, a defect evaluation apparatus, or the like.
  • Non-joined region 100 n in joint interface 100 of group III nitride composite substrate 1 in the present embodiment includes at least one non-joined partial region 111 n , 112 n , 121 n , 122 n .
  • the shape of non-joined partial regions 111 n , 112 n , 121 n , 122 n is indefinite, the shape is substantially circular or elliptical. Therefore, the size of the non-joined region is evaluated on the basis of the maximum size in radial direction (maximum diameter).
  • Non-joined partial regions 111 n , 112 n , 121 n , 122 n can also be classified, by the position where the region is located, into inner non-joined partial regions 111 n , 121 n which do not abut on a perimeter 1 r of a main surface 1 m , and outer non-joined partial regions 112 n , 122 n which abut on perimeter 1 r of main surface 1 m.
  • the area of joined region 100 b joining group III nitride film 13 and support substrate 11 relative to the area of main surface 1 m is preferably 70% or more, and more preferably 85% or more. If the area of joined region 100 b joining group III nitride film 13 and support substrate 11 relative to the area of main surface 1 m is less than 70%, group III nitride film 13 and support substrate 11 are more likely to be separated from each other during a process of manufacturing a group III nitride semiconductor device, which makes it difficult to increase the yield of group III nitride semiconductor devices.
  • the non-joined partial region is preferably small non-joined partial region 111 n , 112 n having a maximum size in radial direction of less than 20 mm.
  • any non-joined partial region is preferably small non-joined partial region 111 n , 112 n.
  • group III nitride composite substrate 1 including outer non-joined partial region 112 n , 122 n contaminants may enter joint interface 100 during a process of fabricating group III nitride composite substrate 1 and a process of manufacturing a group III nitride semiconductor device using group III nitride composite substrate 1 , and the contaminants are difficult to remove by cleaning. In this case, the yield of group III nitride semiconductor devices is difficult to increase.
  • group III nitride composite substrate 1 including outer non-joined partial region 112 n , 122 n is broken through treatment during the step of reducing the thickness of at least one of the bonded group III nitride film 13 and support substrate 11 . In this case as well, the yield of group III nitride semiconductor devices is difficult to increase.
  • the non-joined partial region is more preferably small and inner non-joined partial region 111 n .
  • any non-joined partial region is preferably small and inner non-joined partial region 111 n.
  • the area of main-surface through hole 13 h of group III nitride film 13 relative to the area of main surface 1 m , 13 m is preferably 10% or less, and more preferably 5% or less.
  • main-surface through hole 13 h is a hole extending through group III nitride film 13 between its main surface which is directly or indirectly joined to support substrate 11 and the other surface (specifically another main surface and side surface).
  • main-surface through hole 13 h of group III nitride film 13 in group III nitride composite substrate 1 causes non-joined region 100 n to be formed on main-surface through hole 13 h and its nearby region.
  • a cleaning agent may enter the joint interface through main-surface through hole 13 h to thereby cause reduction of the joint strength of group III nitride composite substrate 1 . If the area of main-surface through hole 13 h relative to the area of main surface 1 m is 10% or more, the area of non-joined region 100 n is accordingly larger, resulting in the difficulty in increasing the yield of group III nitride semiconductor devices.
  • the concentration of an impurity containing metal that is included in joint interface 100 between group III nitride film 13 and support substrate 11 is preferably 1 ⁇ 10 10 cm ⁇ 2 or more, and more preferably 1.5 ⁇ 10 10 cm ⁇ 2 or more.
  • the impurity containing metal is not particularly limited.
  • the impurity is preferably an oxide of a base metal such as Fe (iron), Ni (nickel), or the like which has a higher ionization tendency and more easily oxidizes than H (hydrogen), in the case where group III nitride composite substrate 1 includes, as joint film 12 , an oxide film such as SiO 2 film.
  • group III nitride film 13 has a thermal expansion coefficient of preferably more than 0.7 times and less than 1.4 times, and more preferably 0.75 times or more and 1.25 times or less as large as a thermal expansion coefficient of support substrate 11 .
  • the support substrate in order to suppress occurrence of warp and/or cracks during manufacture of a group III nitride semiconductor device, has a fracture toughness of preferably 1 MNm ⁇ 2/3 or more, and more preferably 1.5 MNm ⁇ 2/3 or more.
  • the support substrate has a thickness of preferably 50 ⁇ m or more, and more preferably 100 ⁇ m or more.
  • a method for manufacturing group III nitride composite substrate 1 which is another embodiment of the present invention is a method for manufacturing group III nitride composite substrate 1 in the first embodiment, and includes the steps of: bonding group III nitride film 13 and support substrate 11 to each other in one of a direct manner and an indirect manner ( FIG. 4 (A)); and reducing the thickness of at least one of group III nitride film 13 and support substrate 11 ( FIG. 4 (B)).
  • the method for manufacturing group III nitride composite substrate 1 in the present embodiment can include the steps above to thereby manufacture group III nitride composite substrates of a low sheet resistance with a high yield.
  • the method for manufacturing group III nitride composite substrate 1 in the present embodiment includes the step of firstly bonding group III nitride film 13 and support substrate 11 to each other in one of a direct manner and an indirect manner.
  • bonding group III nitride film 13 and support substrate 11 to each other in a direct manner means that group III nitride film 13 and support substrate 11 are directly bonded to each other without a separate element interposed therebetween.
  • Bonding group III nitride film 13 and support substrate 11 to each other in an indirect manner means that group III nitride film 13 and support substrate 11 are indirectly bonded to each other with a separate element such as joint film 12 interposed therebetween.
  • the method for bonding group III nitride film 13 and support substrate 11 to each other is not particularly limited regardless of whether they are bonded in the direct manner or the indirect manner.
  • Suitable methods include: a direct bonding method according to which respective surfaces to be bonded to each other are cleaned, bonded together as they are, and thereafter heated to approximately 600° C. to 1200° C. so that they are joined together; a surface activated bonding method according to which the surfaces to be bonded to each other are cleaned, subjected to an activation treatment by means of plasma or ions, and thereafter joined together in a low-temperature atmosphere of room temperature (25° C.
  • any of the above-referenced bonding methods can increase the temperature to approximately 600° C. to 1200° C. after they are joined together to thereby further increase the joint strength.
  • the surface activated bonding method, the high pressure bonding method, and the high vacuum bonding method exhibit a higher effect of increasing the joint strength through the heating to approximately 600° C. to 1200° C. after they are joined together.
  • group III nitride film 13 and support substrate 11 may be bonded to each other in either the direct manner or the indirect manner as described above, in order to increase the joint strength, group III nitride film 13 and support substrate 11 are preferably bonded to each other in an indirect manner with joint film 12 interposed therebetween as shown in FIG. 4 (A). Details will be described below.
  • joint interface 100 As to the method for manufacturing group III nitride composite substrate 1 in the present embodiment as well, due to the presence of surface roughness of respective main surfaces of support substrate 11 , group III nitride film 13 , and joint films 12 , 12 a , 12 b , main-surface through hole 13 h of group III nitride film 13 , non-uniformity of bonding, and the like, there are formed, in joint interface 100 , joined region 100 b where group III nitride film 13 and support substrate 11 are joined to each other in either the direct manner or the indirect manner, and non-joined region 100 n where group III nitride film 13 and support substrate 11 are not joined to each other in either the direct manner or the indirect manner.
  • joined region 100 b and non-joined region 100 n is given above.
  • the method for forming joint films 12 a , 12 b is not particularly limited. In order to reduce the cost of forming the joint film, it is preferable to perform sputtering, vapor deposition, CVD (Chemical Vapor Deposition), or the like.
  • the method for bonding support substrate 11 and group III nitride film 13 to each other by bonding joint film 12 a and joint film 12 b to each other is not particularly limited, and preferred methods are direct bonding method, surface activated bonding method, high-pressure bonding method, high vacuum bonding method, and the like as described above.
  • the method for manufacturing group III nitride composite substrate 1 in the present embodiment includes the step of subsequently reducing the thickness of at least one of group III nitride film 13 and support substrate 11 bonded to each other.
  • the method for reducing the thickness of at least one of group III nitride film 13 and support substrate 11 is not particularly limited, and may for example be the method according to which the substrate whose thickness is to be reduced is cut in parallel with the main surface, the method according to which the main surface of the substrate whose thickness is to be reduced is ground and/or polished, the method according to which the main surface of the substrate whose thickness is to be reduced is etched, the method by means of a laser, or the like.
  • a method for manufacturing a group III nitride semiconductor device 4 which is still another embodiment of the present invention includes the steps of: preparing group III nitride composite substrate 1 ; and growing at least one group III nitride layer 20 on group III-nitride-film 13 -side main surface 13 m of group III nitride composite substrate 1 .
  • the method for manufacturing group III nitride semiconductor device 4 in the present embodiment can include the above steps to thereby manufacture group III nitride semiconductor devices with a high yield.
  • the method for manufacturing group III nitride semiconductor device 4 in the present embodiment includes the step of firstly preparing group III nitride composite substrate 1 .
  • This step of preparing group III nitride composite substrate 1 is similar to the steps in the method for manufacturing group III nitride composite substrate 1 in the second embodiment.
  • the method for manufacturing group III nitride semiconductor device 4 in the present embodiment includes the step of subsequently growing at least one group III nitride layer 20 on group III-nitride-film 13 -side main surface 13 m of group III nitride composite substrate 1 .
  • the method for growing group III nitride layer 20 is not particularly limited.
  • preferred methods include vapor phase methods such as MOCVD (Metal Organic Chemical Vapor Deposition), MBE (Molecular Beam Epitaxy), HVPE (Hydride Vapor Phase Epitaxy), sublimation method, and the like, and liquid phase methods such as high nitrogen pressure solution method, flux method, and the like.
  • group III nitride layer 20 to be grown varies depending on the type and the function of the group III nitride semiconductor device.
  • group III nitride semiconductor device 4 is a light-emitting device
  • group III nitride layer 20 may be formed on group III-nitride-film 13 -side main surface 13 m of group III nitride composite substrate 1 by growing a first-conductivity-type GaN layer 201 , a first-conductivity-type Al s Ga 1-s N layer 202 (here, s meets 0 ⁇ s ⁇ 1), a light-emitting layer 203 , a second-conductivity-type Al t Ga 1-t N layer 204 (here, t meets 0 ⁇ t ⁇ 1), and a second-conductivity-type GaN layer 205 , in this order.
  • the method for manufacturing group III nitride semiconductor device 4 in the present embodiment may include the step of subsequently forming electrodes (a first electrode and a second electrode).
  • electrodes a first electrode and a second electrode.
  • group III nitride layer 20 second-conductivity-type GaN layer 204 , light-emitting layer 203 , first-conductivity-type Al s Ga 1-s N layer 202 , and first-conductivity-type GaN layer 201 may each be partially removed by mesa etching to expose a part of first-conductivity-type GaN layer 201 .
  • first electrode 31 On the exposed main surface of first-conductivity-type GaN layer 201 , first electrode 31 may be formed.
  • second electrode 32 may be formed.
  • the method for forming first electrode 31 and second electrode 32 is not particularly limited, and may be CVD (Chemical Vapor Deposition), sputtering, vapor deposition, or the like.
  • Reference Invention I relates to a low-cost and large-diameter group III nitride composite substrate including a group III nitride film having a large thickness, a small thickness variation, and a high crystal quality, a method for manufacturing the group III nitride composite substrate, a laminated group III nitride composite substrate, and a group III nitride semiconductor device and a method for manufacturing the same.
  • Group III nitrides such as GaN have superior semiconductor properties and are therefore used as materials suitable for semiconductor devices.
  • Japanese Patent Laying-Open No. 2009-126722 discloses a free-standing group III nitride substrate to be used as a substrate for a semiconductor device.
  • the free-standing group III nitride substrate has a diameter of 25 mm or more and 160 mm or less and a thickness of 100 ⁇ m or more and 1000 ⁇ m or less. It discloses, as a specific example thereof, a free-standing GaN substrate having a diameter of 100 mm and a thickness of 400 ⁇ m.
  • Japanese Patent Laying-Open No. 2008-010766 discloses a GaN-thin-film-bonded substrate to be used as a substrate for manufacturing a semiconductor device.
  • the GaN-thin-film-bonded substrate includes a heterogeneous substrate whose chemical composition is different from that of GaN, and a GaN thin film having a thickness of 0.1 ⁇ m or more and 100 ⁇ m or less and bonded to the heterogeneous substrate. It discloses, as a specific example thereof, a GaN-thin-film-bonded substrate having a diameter of 50.8 mm and including a sapphire substrate and a GaN thin film having a thickness of 0.1 ⁇ m or 100 ⁇ m and bonded to the sapphire substrate.
  • Japanese Patent Laying-Open No. 2010-182936 discloses a composite substrate to be used as a substrate for a semiconductor device.
  • the composite substrate includes a support substrate, a nitride semiconductor layer, and a joint layer disposed between the support substrate and the nitride semiconductor layer. It discloses, as a specific example thereof, a composite substrate having a diameter of 50.8 mm and including a sapphire substrate, a GaN layer, and a joint layer formed by press fitting between the substrate and the GaN layer, in which the GaN layer has a thickness of 5 ⁇ m to 220 ⁇ m.
  • the free-standing group III nitride substrate disclosed in Japanese Patent Laying-Open No. 2009-126722 involves problems that the substrate is manufactured at high cost and therefore very expensive, and that the substrate is likely to crack, resulting in difficulty in increasing the diameter of the substrate and decreasing the thickness thereof.
  • the thickness of the GaN thin film is preferably 10 ⁇ m or more.
  • An increase in thickness of the GaN thin film involves a problem that the variation in depth to which ions are implanted from the main surface increases, which accordingly increases the variation in thickness of the GaN thin film in the resultant GaN-thin-film-bonded substrate.
  • both these substrates have a diameter on the order of 50.8 mm. Increase of the diameter, however, involves a problem that the variation, within the main surface, of the thickness of the GaN thin film or the GaN layer increases.
  • Reference Invention I has been made to solve the problems above and an object of the invention is to provide a low-cost and large-diameter group III nitride composite substrate including a group III nitride film having a large thickness, a small thickness variation, and a high crystal quality, a method for manufacturing the group III nitride composite substrate, a laminated group III nitride composite substrate, and a group III nitride semiconductor device and a method for manufacturing the same.
  • Reference Invention I provides a group III nitride composite substrate with a diameter of 75 mm or more including a support substrate and a group III nitride film having a thickness of 10 ⁇ m or more and 250 ⁇ m or less that are bonded to each other, a ratio s t /m t of a standard deviation s t of the thickness of the group III nitride film, to a mean value m t of the thickness thereof being 0.001 or more and 0.2 or less, and a ratio s o /m o of a standard deviation s o of an absolute value of an off angle between a main surface of the group III nitride film and a plane of a predetermined plane orientation, to a mean value m o of the absolute value of the off angle thereof being 0.005 or more and 0.6 or less.
  • the group III nitride composite substrate may have a warp of 50 ⁇ m or less on the group III-nitride-film-side main surface, and the group III nitride composite substrate may have a total thickness variation (TTV hereinafter) of 30 ⁇ m or less.
  • TTV total thickness variation
  • a ratio ⁇ III-N / ⁇ s of a thermal expansion coefficient ⁇ III-N of the group III nitride film to a thermal expansion coefficient ⁇ s of the support substrate may be 0.75 or more and 1.25 or less, and a ratio t III-N /t S of a thickness t III-N of the group III nitride film to a thickness t S of the support substrate may be 0.02 or more and 1 or less.
  • impurity metal atoms of the main surface of the group III nitride film may be 3 ⁇ 10 12 atoms/cm 2 or less.
  • the main surface of the group III nitride film may have a root mean square roughness (RMS hereinafter) of 3 nm or less.
  • a main surface of the support substrate may have an RMS of 12 nm or less.
  • the group III nitride composite substrate may have a diameter of 100 mm or more, or may have a diameter of 125 mm or more and 300 mm or less.
  • the main surface of the group III nitride film may have a mean value m III-N of the RMS of 0.1 nm or more and 2 nm or less, and a standard deviation s III-N of the RMS of 0.4 nm or less
  • a main surface of the support substrate may have a mean value m S of the RMS of 0.3 nm or more and 10 nm or less, and a standard deviation s S of the RMS of 3 nm or less.
  • Reference Invention I provides a laminated group III nitride composite substrate including the group III nitride composite substrate according to the above aspect, and at least one group III nitride layer disposed on the group III nitride film of the group III nitride composite substrate.
  • Reference Invention I provides a group III nitride semiconductor device including the group III nitride film in the group III nitride composite substrate according to the above aspect, and at least one group III nitride layer disposed on the group III nitride film.
  • Reference Invention I provides a method for manufacturing a group III nitride composite substrate according to the above aspect, including the steps of: forming a joined substrate with a diameter of 75 mm or more by bonding a support substrate and a group III nitride film donor substrate to each other; and forming the group III nitride composite substrate by cutting the group III nitride film donor substrate in the joined substrate along a plane located inwardly at a predetermined distance from a bonded main surface of the group III nitride film donor substrate.
  • Reference Invention I provides a method for manufacturing a group III nitride composite substrate according to the above aspect, including the steps of: forming a joined substrate with a diameter of 75 mm or more by bonding a support substrate and a group III nitride film donor substrate to each other; and forming the group III nitride composite substrate by performing at least one of grinding, polishing, and etching on a main surface of the group III nitride film donor substrate in the joined substrate, the main surface being opposite to a bonded main surface of the group III nitride film donor substrate.
  • Reference Invention I provides a method for manufacturing a group III nitride semiconductor device, including the steps of: preparing a group III nitride composite substrate according to the above aspect; and growing at least one group III nitride layer on the group III nitride film of the group III nitride composite substrate.
  • the method for manufacturing a group III nitride semiconductor device according to this aspect of Reference Invention I may further include the steps of: bonding a device support substrate onto the group III nitride layer; and removing the support substrate from the group III nitride composite substrate.
  • Reference Invention I can provide a low-cost and large-diameter group III nitride composite substrate including a group III nitride film having a large thickness, a small thickness variation, and a high crystal quality, a method for manufacturing the group III nitride composite substrate, a laminated group III nitride composite substrate, and a group III nitride semiconductor device and a method for manufacturing the same.
  • a group III nitride composite substrate 1 which is a reference embodiment of Reference Invention I is a group III nitride composite substrate 1 with a diameter of 75 mm or more including a support substrate 11 and a group III nitride film 13 having a thickness of 10 ⁇ m or more and 250 ⁇ m or less that are bonded to each other.
  • the ratio s t /m t of a standard deviation s t of the thickness of group III nitride film 13 , to a mean value m t of the thickness thereof is 0.001 or more and 0.2 or less
  • the ratio s o /m o of a standard deviation s o of an absolute value of an off angle between a main surface 13 m of group III nitride film 13 and a plane of a predetermined plane orientation, to a mean value m o of the absolute value of the off angle thereof is 0.005 or more and 0.6 or less.
  • Group III nitride composite substrate 1 of the present reference embodiment has a diameter of 75 mm or more
  • group III nitride film 13 bonded onto support substrate 11 has a thickness of 10 ⁇ m or more and 250 ⁇ m or less
  • the ratio s t /m t of standard deviation s t of the thickness of group III nitride film 13 , to mean value m t of the thickness thereof is 0.001 or more and 0.2 or less
  • the ratio s o /m o of standard deviation s o of an absolute value of an off angle between main surface 13 m of group III nitride film 13 and a plane of a predetermined plane orientation, to mean value m o of the absolute value of the off angle thereof is 0.005 or more and 0.6 or less.
  • group III nitride film 13 at least one group III nitride layer having a large diameter and a high crystal quality can be grown, and therefore, group III nitride semiconductor devices having excellent characteristics can be produced with a high yield.
  • the manner in which support substrate 11 and group III nitride film 13 are bonded to each other is not particularly limited. In order to increase the joint strength of the bonding, however, it is preferable to provide a joint film 12 between the support substrate 11 and the group III nitride film 13 .
  • the diameter of group III nitride composite substrate 1 is 75 mm or more, and is preferably 100 mm or more, more preferably 125 mm or more, and still more preferably 150 mm or more. Meanwhile, in order to reduce the warp of the composite substrate and increase the yield of semiconductor devices, the diameter of group III nitride composite substrate 1 is preferably 300 mm or less, and more preferably 200 mm or less.
  • group III nitride composite substrate 1 has a warp, on the group III nitride film 13 side, of preferably 50 ⁇ m or less, more preferably 30 ⁇ m or less, and still more preferably 20 ⁇ m or less.
  • the warp on the group III nitride film 13 side of group III nitride composite substrate 1 is calculated in the following way.
  • the distance between the least square plane and a point on the main surface that is located furthest away in one direction from the least square plane and the distance between the least square plane and a point on the main surface that is located furthest away in the other direction from the least square plane are added together.
  • the value of this sum represents the warp.
  • the warp is measured by means of an interferometric flatness tester, a laser displacement meter, or the like.
  • the TTV (Total Thickness Variation which is one of indices used for evaluating the flatness and also called GBIR (Global Backside Ideal Range)) of group III nitride composite substrate 1 is preferably 30 ⁇ m or less, more preferably 20 ⁇ m or less, and still more preferably 10 ⁇ m or less.
  • the TTV of group III nitride composite substrate 1 is the difference between the maximum value and the minimum value, within the whole main surface 13 m of group III nitride film 13 , of the distance measured in the thickness direction from a reference plane, which is a main surface of support substrate 11 and is the rear surface of group III nitride composite substrate 1 , to main surface 13 m of group III nitride film 13 , which is the front surface of group III nitride composite substrate 1 .
  • the TTV is the difference between the highest level and the lowest level of the main surface of group III nitride film 13 , which is the front surface of group III nitride composite substrate 1 , relative to the reference plane, which is the main surface of support substrate 11 , namely the rear surface of group III nitride composite substrate 1 , and corrected to be flat.
  • the level difference is measured by means of an interferometric flatness tester, a laser displacement meter, or the like.
  • the ratio ⁇ III-N / ⁇ S of thermal expansion coefficient of the group III nitride film to thermal expansion coefficient ⁇ s of the support substrate is preferably 0.75 or more and 1.25 or less, more preferably 0.8 or more and 1.2 or less, still more preferably 0.9 or more and 1.1 or less, and particularly preferably 0.95 or more and 1.05 or less.
  • the ratio t III-N /t S of thickness t III-N of the group III nitride film to thickness t S of the support substrate is preferably 0.02 or more and 1 or less, more preferably 0.06 or more and 0.7 or less, still more preferably 0.15 or more and 0.5 or less, and particularly preferably 0.2 or more and 0.4 or less.
  • Support substrate 11 is not particularly limited as long as support substrate 11 can support group III nitride film 13 .
  • the support substrate is preferably a hetero-composition substrate whose chemical composition is different from that of the group III nitride.
  • support substrate 11 is preferably a substrate formed of mullite (3Al 2 O 3 .2SiO 2 -2Al 2 O 3 .SiO 2 ), a substrate formed of mullite-YSZ (Yttria Stabilized Zirconia), a substrate formed of spinel (MgAl 2 O 4 ), a substrate formed of a sintered body of an Al 2 O 3 —SiO 2 -based composite oxide, and substrates formed respectively of sintered bodies of them to which oxide, carbonate or the like is added, a molybdenum (Mo) substrate, a tungsten (W) substrate, or the like.
  • mullite 3Al 2 O 3 .2SiO 2 -2Al 2 O 3 .SiO 2
  • mullite-YSZ Yttria Stabilized Zirconia
  • spinel MgAl 2 O 4
  • a substrate formed of a sintered body of an Al 2 O 3 —SiO 2 -based composite oxide
  • preferred elements to be contained in the oxide and the carbonate are Ca, Mg, Sr, Ba, Al, Sc, Y, Ce, Pr, Si, Ti, Zr, V, Nb, Ta, Cr, Mn, Fe, Co, Ni, Cu, Zn, and the like.
  • the root mean square roughness (hereinafter also referred to as RMS) of main surface 11 n of support substrate 11 in group III nitride composite substrate 1 is preferably 12 nm or less, more preferably 6 nm or less, and still more preferably 2 nm or less, in order to enhance the crystal quality of a group III nitride layer to be grown on group III nitride film 13 of group III nitride composite substrate 1 .
  • the RMS of main surface 11 n of support substrate 11 can be adjusted by polishing both the main surfaces of support substrate 11 before group III nitride film 13 is bonded to support substrate 11 , or polishing, after group III nitride film 13 is bonded to support substrate 11 , the other main surface to which group III nitride film 13 is not bonded.
  • the RMS of main surface 11 n of support substrate 11 is determined in the following way. From points on main surface 11 n of support substrate 11 , a reference plane is calculated, and the positive square root of the mean of respective squares of the distances from the aforementioned points to the reference plane is determined. The value of the determined positive square root is the RMS, which is measured by means of an AFM (Atomic Force Microscope), an interferometric roughness meter, a stylus-based roughness meter, or the like.
  • AFM Anatomic Force Microscope
  • the main surface 11 n of support substrate 11 preferably has a mean value m S of the RMS of 0.3 nm or more and 10 nm or less, and a standard deviation s S of the RMS of 3 nm or less.
  • a group III nitride layer of high crystal quality can be grown on the whole main surface 13 m of group III nitride film 13 and accordingly semiconductor devices can be produced with a high yield.
  • mean value m S of the RMS of main surface 11 n of support substrate 11 is more preferably 0.3 nm or more and 5 nm or less, and still more preferably 0.3 nm or more and 2 nm or less.
  • standard deviation s S of the RMS of main surface 11 n of support substrate 11 is more preferably 2 nm or less, and still more preferably 1 nm or less.
  • mean value m S and standard deviation s S of the RMS of main surface 11 n of support substrate 11 are respectively the arithmetic mean and the standard deviation that are calculated from the RMS measured at the 13 measurement points on main surface 11 n of support substrate 11 shown in FIG. 7 .
  • Joint film 12 is not particularly limited as long as joint film 12 can join support substrate 11 and group III nitride film 13 to each other.
  • Joint film 12 is preferably SiO 2 film, Si 3 N 4 film, TiO 2 film, Ga 2 O 3 film, or the like because these films have a high joining ability for joining support substrate 11 and group III nitride film 13 to each other.
  • Group III nitride film 13 is a film formed of a group III nitride, specifically an In x Al y Ga 1-x-y N film (0 ⁇ x, 0 ⁇ y, x+y ⁇ 1) such as GaN film, AlN film, or the like.
  • the thickness of group III nitride film 13 is 10 ⁇ m or more, which is preferably 30 ⁇ m or more, more preferably 50 ⁇ m or more, and still more preferably 100 ⁇ m or more. Meanwhile, in order to reduce the amount of use of the expensive group III nitride, the thickness of group III nitride film 13 is 250 ⁇ m or less, which is preferably 200 ⁇ m or less, and more preferably 170 ⁇ m or less, and particularly preferably 150 ⁇ m or less.
  • the ratio s t /m t of standard deviation s t of the thickness of group III nitride film 13 , to mean value m t of the thickness thereof is 0.001 or more and 0.2 or less, which is preferably 0.001 or more and 0.15 or less, more preferably 0.002 or more and 0.1 or less, and still more preferably 0.01 or more and 0.05 or less.
  • a ratio s t /m t is higher than 0.2, the uniformity of the film thickness is deteriorated, which degrades the characteristics of semiconductor devices to be produced.
  • the ratio s o /m o of standard deviation s o of an absolute value of an off angle between main surface 13 m of group III nitride film 13 and a plane of a predetermined plane orientation, to mean value m o of the absolute value of the off angle thereof is 0.005 or more and 0.6 or less, which is preferably 0.005 or more and 0.5 or less, more preferably 0.008 or more and 0.4 or less, and still more preferably 0.05 or more and 0.2 or less.
  • the ratio s o /m o is higher than 0.6, a portion where the morphology of a group III nitride layer formed on group III nitride film 13 is deteriorated is generated within the main surface.
  • the variation, within the main surface, of the amount of impurities taken into the main surface is large, which reduces the yield of semiconductor devices to be produced.
  • the crystal structure of group III nitride film 13 is preferably the wurtzite structure, since it enables semiconductor devices having excellent characteristics to be produced.
  • the above-referenced predetermined plane orientation to which main surface 13 m of group III nitride film 13 is closest is not limited as long as it is suitable for a desired semiconductor device, and may be any of ⁇ 0001 ⁇ , ⁇ 10-10 ⁇ , ⁇ 11-20 ⁇ , ⁇ 21-30 ⁇ , ⁇ 20-21 ⁇ , ⁇ 10-11 ⁇ , ⁇ 11-22 ⁇ , and ⁇ 22-43 ⁇ , as well as plane orientations that are 15° or less off from these plane orientations, respectively.
  • main surface 13 m of group III nitride film 13 may be any of polar plane, nonpolar plane, and semipolar plane.
  • Main surface 13 m of group III nitride film 13 is preferably any of the ⁇ 0001 ⁇ plane and the opposite plane thereof, since such planes make it easy to increase the diameter, or any of ⁇ 10-10 ⁇ plane, ⁇ 20-21 ⁇ plane, and the opposite planes thereof, since such planes suppress blue shift of a light-emitting device to be produced.
  • mean value m t of the thickness, standard deviation s t of the thickness, mean value m o of the off angle, and standard deviation s o of the off angle are values of the arithmetic mean and the standard deviation calculated from respective measurements of the thickness and respective measurements of the off angle that are taken at the 13 measurement points on main surface 13 m of group III nitride film 13 shown in FIG. 7 .
  • impurity metal atoms of main surface 13 m of group III nitride film 13 are preferably 3 ⁇ 10 12 atoms/cm 2 or less, more preferably 4 ⁇ 10 11 atoms/cm 2 or less, and still more preferably 1 ⁇ 10 11 atoms/cm 2 or less.
  • Cl atoms are preferably 2 ⁇ 10 14 atoms/cm 2 or less, and Si atoms are preferably 9 ⁇ 10 13 atoms/cm 2 or less, in order to enhance the crystal quality of a group III nitride layer to be grown on group III nitride film 13 and enhance the characteristics of semiconductor devices to be formed.
  • the RMS of main surface 13 m of group III nitride film 13 is preferably 3 nm or less, more preferably 2 nm or less, and still more preferably 1 nm or less.
  • main surface 13 m of group III nitride film 13 has a mean value M III-N of the RMS of 0.1 nm or more and 2 nm or less, and a standard deviation s III-N of the RMS of 0.4 nm or less.
  • main surface 13 m of group III nitride film 13 has a mean value m III-N of the RMS of 2 nm or less and a standard deviation s III-N of the RMS of 0.4 nm or less
  • a group III nitride layer of high crystal quality can be grown on the whole main surface 13 m of group III nitride film 13 , and accordingly, semiconductor devices can be produced with a high yield.
  • mean value of the RMS of main surface 13 m of group III nitride film 13 is more preferably 0.1 nm or more and 1.5 nm or less, and still more preferably 0.2 nm or more and 1 nm or less.
  • main surface 13 m of group III nitride film 13 has a standard deviation S III-N of the RMS of more preferably 0.3 nm or less, and still more preferably 0.2 nm or less.
  • the mean value m III-N and the standard deviation of the RMS of main surface 13 m of group III nitride film 13 are respectively the arithmetic mean and the standard deviation that are calculated from the RMS measured at the 13 measurement points on the main surface of group III nitride film 13 shown in FIG. 7 , as described above.
  • group III nitride film 13 its dislocation density is preferably 1 ⁇ 10 8 cm ⁇ 2 or less, and its carrier concentration is preferably 1 ⁇ 10 17 cm ⁇ 3 or more.
  • a laminated group III nitride composite substrate 2 which is another reference embodiment of Reference Invention I includes group III nitride composite substrate 1 of Reference Embodiment I-1, and at least one group III nitride layer 20 disposed on group III nitride film 13 of group III nitride composite substrate 1 .
  • group III nitride layer 20 disposed by being grown on group III nitride film 13 which has a high crystal quality as well as a small thickness variation and a small off-angle variation, also has a high crystal quality. Therefore, semiconductor devices having excellent characteristics can be produced with a high yield.
  • group III nitride layer 20 disposed on group III nitride film 13 varies depending on the type of the semiconductor device to be produced.
  • group III nitride layer 20 may be configured to include, for example, an n-GaN layer 21 , an n-In 0.05 Ga 0.95 N layer 22 , an active layer 23 having a multiple quantum well structure, a p-Al 0.09 Ga 0.91 N layer 24 , and a p-GaN layer 25 .
  • the group III nitride layer may be configured to include, for example, a GaN layer 26 and an Al 0.2 Ga 0.8 N layer 27 .
  • the group III nitride layer may be configured to include, for example, an n + -GaN layer 28 (having a carrier concentration for example of 2 ⁇ 10 18 cm ⁇ 3 ) and an n ⁇ -GaN layer 29 (having a carrier concentration for example of 5 ⁇ 10 15 cm ⁇ 3 ).
  • a group III nitride semiconductor device 4 which is still another reference embodiment of Reference Invention I includes group III nitride film 13 in the group III nitride composite substrate of Reference Embodiment I-1, and at least one group III nitride layer 20 disposed on group III nitride film 13 .
  • Group III nitride semiconductor device 4 of the present reference embodiment includes group III nitride film 13 which has a high crystal quality as well as a small thickness variation and a small off-angle variation, and group III nitride layer 20 of high crystal quality disposed by being grown on group III nitride film 13 , and therefore has excellent characteristics.
  • group III nitride layer 20 varies depending on the type of group III nitride semiconductor device 4 .
  • group III nitride layer 20 may be configured to include, for example, an n-GaN layer 21 , an n-In 0.05 Ga 0.95 N layer 22 , an active layer 23 having a multiple quantum well structure, a p-Al 0.09 Ga 0.91 N layer 24 , and a p-GaN layer 25 .
  • group III nitride layer 20 may be configured to include, for example, a GaN layer 26 and an Al 0.2 Ga 0.8 N layer 27 .
  • the group III nitride layer may be configured to include, for example, an n + -GaN layer 28 (having a carrier concentration for example of 2 ⁇ 10 18 cm ⁇ 3 ) and an n ⁇ -GaN layer 29 (having a carrier concentration for example of 5 ⁇ 10 15 cm ⁇ 3 ).
  • group III nitride semiconductor device 4 further includes at least one of support substrate 11 and a device support substrate 40 for supporting group III nitride layer 20 .
  • the shape of device support substrate 40 is not limited to the shape of a flat plate, and may be any as long as it supports group III nitride film 13 and group III nitride layer 20 so that group III nitride semiconductor device 4 can be formed.
  • a method for manufacturing a group III nitride composite substrate which is a further reference embodiment of Reference Invention I is a method for manufacturing group III nitride composite substrate 1 of Reference Embodiment I-1, including the steps of: forming a joined substrate 1 L, 1 LS having a diameter of 75 mm or more by bonding support substrate 11 and a group III nitride film donor substrate 13 D to each other ( FIG. 12 (A) to (C) and FIG.
  • group III nitride composite substrate 1 by cutting group III nitride film donor substrate 13 D in joined substrate 1 L, 1 LS along a plane located inwardly at a predetermined distance from the bonded main surface of group III nitride film donor substrate 13 D ( FIG. 12 (D), FIG. 13 (D)).
  • the method for manufacturing a group III nitride composite substrate of the present reference embodiment can efficiently manufacture low-cost and large-diameter group III nitride composite substrate 1 including a group III nitride film having a large thickness and a high crystal quality.
  • the predetermined distance of the plane located inwardly from the bonded main surface of group III nitride film donor substrate 13 D, for cutting group III nitride film donor substrate 13 D along the plane at this distance is determined depending on the thickness of group III nitride film 13 of group III nitride composite substrate 1 to be manufactured.
  • group III nitride film donor substrate 13 D is cut to form group III nitride film 13 , and thereafter at least one of grinding, polishing, and etching can be performed on the main surface 13 m of group III nitride film 13 opposite to bonded main surface 13 n thereof, to thereby reduce the thickness of group III nitride film 13 .
  • the method for polishing is preferably precision polishing based on CMP (Chemical Mechanical Polishing), chemical polishing, or the like.
  • the predetermined distance of the plane located inwardly from bonded main surface 13 n of group III nitride film donor substrate 13 D, for cutting group III nitride film donor substrate 13 D along the plane at this distance is preferably the sum determined by adding a polishing allowance, which is a portion to be removed away by polishing, to the thickness of group III nitride film 13 of group III nitride composite substrate 1 to be manufactured.
  • group III nitride film donor substrate 13 D is cut along a plane located inwardly at a predetermined distance from bonded main surface 13 n of group III nitride film donor substrate 13 D in joined substrate 1 L, 1 LS, and preferably at least one of grinding, polishing, and etching is performed on the main surface 13 m which is opposite to bonded main surface 13 n of group III nitride film donor substrate 13 D, to thereby adjust the film thickness by reducing it. Accordingly, group III nitride composite substrate 1 including group III nitride film 13 having a desired thickness of 10 ⁇ m or more and 250 ⁇ m or less can be obtained.
  • the group III nitride film donor substrate is cut in the step of forming the group III nitride composite substrate.
  • the thickness of group III nitride film donor substrate 13 D to be used is preferably larger than 500 ⁇ m, more preferably 1 mm or more, and still more preferably 2 mm or more.
  • the step of forming joined substrate 1 L, 1 LS includes the sub step of forming a joint film 12 a on a main surface 11 m of support substrate 11 ( FIG. 12 (A), FIG. 13 (A)), the sub step of forming a joint film 12 b on a main surface 13 n of group III nitride film donor substrate 13 D ( FIG. 12 (B), FIG. 13 (B)), and the sub step of bonding joint film 12 a formed on support substrate 11 and joint film 12 b formed on group III nitride film donor substrate 13 D to each other ( FIG. 12 (C), FIG. 13 (C)).
  • joint film 12 a is to be integrated with joint film 12 b , which will be described later herein, to form joint film 12 , and is made of the same material as joint film 12 .
  • the method for forming joint film 12 a is not particularly limited as long as the method is suitable for forming joint film 12 a . In order to efficiently form joint film 12 a of good quality, however, the method is preferably sputtering, CVD (Chemical Vapor Deposition), PLD (Pulsed Laser Deposition), MBE (Molecular Beam Epitaxy), electron-beam deposition, or the like.
  • CVD is particularly preferred since it enhances the quality of the joint film and enhances the film deposition rate.
  • P-CVD Pulsma-Chemical Vapor Deposition
  • PE-CVD Pulsma Enhanced-Chemical Vapor Deposition
  • LP-CVD Low Pressure-Chemical Vapor Deposition
  • annealing may be performed after joint films 12 a , 12 b are formed and before they are joined together. This annealing can degas joint films 12 a , 12 b to thereby densify joint films 12 a , 12 b.
  • a main surface 12 am of joint film 12 a is preferably mirror-polished (into a mirror-finished surface having an RMS of 0.3 nm or less).
  • the method for polishing main surface 12 am of joint film 12 a is not particularly limited.
  • CMP Chemical Mechanical Polishing
  • non-abrasive polishing may be performed, after CMP, with a solution containing no abrasive.
  • non-abrasive polishing may be performed by means of an alkali such as KOH, TMAH (tetramethylammonium hydroxide), or an acid such as HCl, HNO 3 , H 2 SO 4 .
  • an alkali such as KOH, TMAH (tetramethylammonium hydroxide), or an acid such as HCl, HNO 3 , H 2 SO 4 .
  • scrub cleaning using sponge, brush, or the like may be performed.
  • two-fluid cleaning, megasonic cleaning, ultrasonic cleaning, or the like may suitably be performed.
  • group III nitride film donor substrate 13 D is a donor substrate which is to provide group III nitride film 13 after a part thereof is separated in the subsequent sub step.
  • the method for preparing this group III nitride film donor substrate 13 D is not particularly limited.
  • group III nitride film donor substrate 13 D of good crystallinity suitable methods are gas phase methods such as HYPE (Hydride Vapor Phase Epitaxy), MOVPE (Metal Organic Vapor Phase Epitaxy), MBE (Molecular Beam Epitaxy), and sublimation method, as well as liquid phase methods such as flux method, high nitrogen pressure solution method, ammonothermal method, and the like.
  • gas phase methods such as HYPE (Hydride Vapor Phase Epitaxy), MOVPE (Metal Organic Vapor Phase Epitaxy), MBE (Molecular Beam Epitaxy), and sublimation method
  • liquid phase methods such as flux method, high nitrogen pressure solution method, ammonothermal method, and the like.
  • Group III nitride film donor substrate 13 D prepared in this way is not particularly limited.
  • the donor substrate preferably has a degree of crystallinity substantially identical to that of group III nitride film 13 to be provided.
  • the ratio s o /m o of standard deviation s o of an absolute value of an off angle between main surface 13 m of group III nitride film donor substrate 13 D and a plane of a predetermined plane orientation, to a mean value m o of the absolute value of the off angle thereof is 0.005 or more and 0.6 or less.
  • joint film 12 b as well as polishing of a main surface 12 bn of joint film 12 b are similar to the material and the method for forming the above-described joint film 12 a as well as polishing of main surface 12 am of joint film 12 a.
  • the method for bonding them together is not particularly limited. Suitable methods include: a direct bonding method according to which respective surfaces to be bonded to each other are cleaned, directly bonded together, and thereafter heated to approximately 600° C. to 1200° C. so that the joint films are joined together; a surface activated bonding method according to which the surfaces to be bonded to each other are cleaned, subjected to an activation treatment by means of plasma or ions, and thereafter joined together under a low-temperature atmosphere of room temperature (25° C.
  • any of the above-referenced bonding methods can increase the temperature to approximately 600° C. to 1200° C. after the joint films are joined together to thereby further increase the joint strength.
  • the surface activated bonding method, the high pressure bonding method, and the high vacuum bonding method exhibit a higher effect of increasing the joint strength through the heating to approximately 600° C. to 1200° C. after the joint films are joined together.
  • joint film 12 a and joint film 12 b are joined together and thereby integrated into joint film 12 .
  • Support substrate 11 and group III nitride film donor substrate 13 D are joined together with joint film 12 interposed therebetween to thereby form joined substrate 1 L, 1 LS.
  • Respective surfaces of joint films 12 a and 12 b to be bonded to each other can thus be activated before being bonded to each other, to thereby increase the joint strength.
  • Activation of the surfaces to be bonded is not particularly limited.
  • the surfaces are preferably activated through plasma treatment, ion treatment, chemical treatment by means of a chemical solution, cleaning, CMP treatment, and the like, since they have a high activation effect.
  • group III nitride film donor substrate 13 D is cut along a plane located inwardly at a predetermined distance from bonded main surface 13 n of group III nitride film donor substrate 13 D in joined substrate 1 L, 1 LS. Accordingly, the donor substrate is separated into group III nitride film 13 , which is joined to support substrate 11 with joint film 12 interposed therebetween, and a remaining group III nitride film donor substrate 13 Dr.
  • group III nitride composite substrate 1 in which support substrate 11 and group III nitride film 13 are bonded to each other with joint film 12 interposed therebetween is formed.
  • the method for cutting group III nitride film donor substrate 13 D is not particularly limited, and may be any of the methods such as wire saw, blade saw, laser processing, electrical discharge processing, water jet, and the like.
  • group III nitride film donor substrate 13 D As to cutting of group III nitride film donor substrate 13 D by means of a wire saw, it is preferable to use a fixed-abrasive wire in order to flatly cut group III nitride film donor substrate 13 D of a large diameter, and it is preferable to use a thin wire in order to reduce a cutting allowance, which is a portion to be removed away through cutting. For reduction of the cutting allowance, loose-abrasive processing is preferred.
  • the wire and vibrate group III nitride film donor substrate 13 D in synchronization therewith, in order to reduce the cut resistance and thereby improve the thickness precision and the flatness.
  • the cutting resistance can be reduced in the following manner. In the case where the wire saw is positioned at a right angle or an angle close thereto relative to the direction in which group III nitride film donor substrate 13 D is cut, group III nitride film donor substrate 13 D is moved along the direction in which it is cut.
  • group III nitride film donor substrate 13 D is moved in the direction opposite to the direction in which it is cut.
  • the group III nitride such as GaN is more brittle and more prone to crack as compared with sapphire, SiC, and the like, and therefore cannot be cut appropriately by a cutting method similar to that used for sapphire and SiC. It is therefore necessary for cutting of the group III nitride to further reduce the cut resistance.
  • the resistance coefficient R (N) is within an appropriate range, specifically a range of 4000 or more and 5000 or less.
  • the resistance coefficient R (N) is represented by ( ⁇ Q ⁇ V)/(L ⁇ P ⁇ n) where ⁇ (Pa ⁇ s) is the viscosity of a machining fluid for slicing, Q (m 3 /s) is the flow rate of the machining fluid, V (m/s) is the wire speed, L (m) is the maximum cut length, P (m/s) is the cut speed, and n is the number of workpieces that are cut simultaneously.
  • group III nitride composite substrate 1 obtained through the cutting, respective main surfaces 13 m , 11 n of group III nitride film 13 and support substrate 11 can be polished so that a desired thickness, a desired off angle, and the uniformity of them are obtained.
  • group III nitride composite substrate 1 can be secured by means of suction and/or a back pad.
  • Group III nitride composite substrate 1 may also be bonded first to a holding plate and then bonded to a polishing apparatus. For this bonding, mechanical pressurization such as vacuum chuck, air back pressurization, weight or the like can be used to reduce inclination and correct warp.
  • Group III nitride composite substrate 1 may also be secured by means of suction.
  • Group III nitride composite substrate 1 can uniformly be bonded to the polishing apparatus to reduce the thickness variation and the off-angle variation after polishing.
  • the predetermined distance of the plane located inwardly from bonded main surface 13 n of group III nitride film donor substrate 13 D, for cutting group III nitride film donor substrate 13 D in joined substrate 1 L, 1 LS along the plane at this distance is preferably the sum determined by adding a polishing allowance, which is a portion to be removed away by polishing, to the thickness of group III nitride film 13 of group III nitride composite substrate 1 to be manufactured.
  • the polishing allowance is not particularly limited, but preferably 10 ⁇ m or more, more preferably 20 ⁇ m or more, and still more preferably 30 ⁇ m or more, in order to reduce the thickness variation and the off-angle variation and remove a damaged layer. Meanwhile, in order to reduce the material loss of group III nitride film donor substrate 13 D, the polishing allowance is preferably 100 ⁇ m or less, more preferably 80 ⁇ m or less, and still more preferably 60 ⁇ m or less.
  • the remaining group III nitride film donor substrate 13 Dr may have its main surface polished so that it can be used repeatedly.
  • a support-incorporated group III nitride film donor substrate 5 D in which a group III nitride film donor substrate support 15 is bonded to group III nitride film donor substrate 13 D can be used to produce a group 111 nitride composite substrate 1 in a similar manner to the above.
  • Support-incorporated group III nitride film donor substrate 5 D has group III nitride film donor substrate support 15 which supports group III nitride film donor substrate 13 D, and can therefore be used repeatedly even if group III nitride film donor substrate 13 D becomes thinner to such an extent that substrate 13 D cannot stand by itself.
  • group III nitride film donor substrate support 15 and group III nitride film donor substrate 13 D are bonded to each other is not particularly limited. In order to increase the joint strength of the bonding, however, it is preferable to dispose a joint film 14 therebetween.
  • Group III nitride film donor substrate support 15 is also not particularly limited. In order to increase the support strength and prevent occurrence of crack and warp, however, it is preferable that support 15 is formed of a material having similar physical properties to support substrate 11 .
  • joint film 14 is not particularly limited, it may preferably be any of SiO 2 film, Si 3 N 4 film, TiO 2 film, Ga 2 O 3 film, and the like, since these films provide a good joint to group III nitride film donor substrate support 15 and group III nitride film donor substrate 13 D.
  • a method for manufacturing a group III nitride composite substrate which is a still further reference embodiment of Reference Invention I, is specifically a method for manufacturing group III nitride composite substrate 1 of the Reference Embodiment I-1, including the steps of: forming joined substrate 1 L having a diameter of 75 mm or more by bonding support substrate 11 and group III nitride film donor substrate 13 D to each other ( FIG. 14 ).
  • group III nitride composite substrate 1 by performing at least one of grinding, polishing, and etching on a main surface of group III nitride film donor substrate 13 D of joined substrate 1 L, the main surface being located opposite to the bonded main surface of group III nitride film donor substrate 13 D ( FIG. 14 (D)).
  • group III nitride composite substrate 1 in the present reference embodiment at least one of grinding, polishing, and etching is performed on the main surface opposite to the bonded main surface of group III nitride film donor substrate 13 D to thereby adjust the film thickness by reducing it, and accordingly, group III nitride composite substrate 1 including group III nitride film 13 having a desired thickness of 10 ⁇ m or more and 250 ⁇ m less can be obtained.
  • the thickness of group III nitride film donor substrate 13 D to be used is preferably 500 ⁇ m or less, and more preferably 400 ⁇ m or less.
  • the sub step of forming joint film 12 a on main surface 11 m of support substrate 11 as shown in FIG. 14 (A) is similar to the sub step of forming joint film 12 a on main surface 11 m of support substrate 11 as shown in FIG. 12 (A).
  • the sub step of forming joint film 12 b on main surface 13 n of group III nitride film donor substrate 13 D as shown in FIG. 14 (B) is similar to the sub step of forming joint film 12 b on main surface 13 n of group III nitride film donor substrate 13 D as shown in FIG. 12 (B).
  • group III nitride composite substrate 1 in the step of forming group III nitride composite substrate 1 , at least one of grinding, polishing, and etching is performed on main surface 13 m opposite to bonded main surface 13 n of group III nitride film donor substrate 13 D in joined substrate 1 L, to thereby form group III nitride film 13 with its thickness reduced, from group III nitride film donor substrate 13 D, and accordingly form group III nitride composite substrate 1 in which support substrate 11 and group III nitride film 13 are bonded together with joint film 12 interposed therebetween.
  • the method for grinding group III nitride film donor substrate 13 D is not particularly limited, and may be grinding by means of one of a grinding wheel and abrasive grains.
  • the method for polishing group III nitride film donor substrate 13 D is not particularly limited, and may be rough polishing such as mechanical polishing, precision polishing such as CMP and chemical polishing, or the like.
  • the method for etching group III nitride film donor substrate 13 D is not particularly limited, and may be wet etching using a chemical solution, dry etching such as RIE (Reactive Ion Etching), or the like.
  • polish main surface 13 m of group III nitride film 13 of group III nitride composite substrate 1 obtained through at least one of grinding and etching is preferably 10 ⁇ m or more, more preferably 20 ⁇ m or more, and still more preferably 30 ⁇ m or more, in order to reduce the thickness variation and the off-angle variation, and remove a damaged layer.
  • the reduction of the thickness by at least one of grinding, polishing, and etching is preferably 100 ⁇ m or less, more preferably 80 ⁇ m or less, and still more preferably 60 ⁇ m or less, in order to reduce the material loss of group III nitride film donor substrate 13 D.
  • a method for manufacturing a group III nitride semiconductor device which is a still further reference embodiment of Reference Invention I, includes the steps of: preparing group III nitride composite substrate 1 of Reference Embodiment I-1; and growing at least one group III nitride layer 20 on group III nitride film 13 of group III nitride composite substrate 1 ( FIG. 15 (A)).
  • the method for manufacturing a group III nitride semiconductor device in the present reference embodiment can be used to manufacture group III nitride semiconductor devices having excellent characteristics with a high yield.
  • the method for manufacturing a group III nitride semiconductor device in the present reference embodiment may further include the steps of: bonding a device support substrate 40 onto group III nitride layer 20 ( FIG. 15 (B)); and removing support substrate 11 from group III nitride composite substrate 1 ( FIG. 15 (C)). These steps can be added to manufacture, with a high yield, group III nitride semiconductor devices supported by device support substrate 40 and having a high mechanical strength and excellent characteristics.
  • the method for manufacturing a group III nitride semiconductor device in the present reference embodiment may specifically be performed through the following steps.
  • suitable methods for growing group III nitride layer 20 are gas phase methods such as MOVPE, MBE, HYPE, and sublimation method, as well as liquid phase methods such as flux method, in order to epitaxially grow group III nitride layer 20 having a high crystal quality, and a particularly suitable method is MOVPE.
  • group III nitride layer 20 varies depending on the type of group III nitride semiconductor device 4 .
  • group III nitride layer 20 may be configured by successively growing, on group III nitride film 13 , for example, an n-GaN layer 21 , an n-In 0.05 Ga 0.95 N layer 22 , an active layer 23 having a multiple quantum well structure, a p-Al 0.09 Ga 0.91 N layer 24 , and a p-GaN layer 25 .
  • group III nitride layer 20 is grown on group III nitride film 13 of group III nitride composite substrate 1 , and accordingly laminated group III nitride composite substrate 2 is obtained.
  • the step of bonding device support substrate 40 onto group III nitride layer 20 is performed by forming a first electrode 30 and a pad electrode 33 on group III nitride layer 20 of laminated group III nitride composite substrate 2 , forming a pad electrode 43 and a joint metal film 44 on device support substrate 40 , and bonding joint metal film 44 to pad electrode 33 .
  • laminated substrate 3 is obtained.
  • Si substrate, CuW substrate, or the like is used as device support substrate 40 .
  • the step of removing support substrate 11 from group III nitride composite substrate 1 is performed by removing support substrate 11 of group III nitride composite substrate 1 from laminated substrate 3 .
  • group III nitride composite substrate 1 includes joint film 12 interposed between support substrate 11 and group III nitride film 13
  • joint film 12 can also be removed.
  • the method for removing support substrate 11 and joint film 12 is not particularly limited, and suitable methods to be used are grinding, etching, and the like.
  • support substrate 11 formed of a material which is low in hardness, strength, and wear resistance, and is likely to be ground off, can be removed by at least one of grinding and polishing, in order to reduce the manufacturing cost.
  • a support substrate formed of a polycrystalline material such as ceramic material is more preferred as compared with a support substrate formed of a monocrystalline material such as sapphire, SiC, group III nitride (such as GaN), or the like, since the support substrate 11 of the polycrystalline material is easier to remove.
  • a second electrode 50 is formed and, on device support substrate 40 , a device support substrate electrode 45 is formed.
  • Reference Invention II relates to a low-cost and large-diameter group III nitride composite substrate which includes a thick group III nitride film and has a small temperature variation on a main surface when a group III nitride layer is grown, to enable reduction of the cost of manufacturing a semiconductor device and enable group III nitride semiconductor devices to be manufactured with a high yield. It also relates to a method for manufacturing the group III nitride composite substrate, a laminated group III nitride composite substrate, as well as a group III nitride semiconductor device and a method for manufacturing the same.
  • Group III nitrides such as GaN have superior semiconductor properties and are therefore used as materials suitable for semiconductor devices.
  • group III nitrides such as GaN have excellent material characteristics different from those of Si, GaAs, SiC, or the like for different types of semiconductor devices such as light-emitting device and electronic device for example, and can therefore be used for a variety of devices.
  • Japanese Patent Laying-Open No. 2009-126722 discloses a free-standing group III nitride substrate to be used as a substrate for a semiconductor device.
  • the free-standing group III nitride substrate has a diameter of 25 mm or more and 160 mm or less and a thickness of 100 ⁇ m or more and 1000 ⁇ m or less. It discloses, as a specific example thereof, a free-standing GaN substrate having a diameter of 100 mm and a thickness of 400 ⁇ m.
  • Japanese Patent Laying-Open No. 2008-010766 discloses a GaN-thin-film-bonded substrate to be used as a substrate for manufacturing a semiconductor device.
  • the GaN-thin-film-bonded substrate includes a heterogeneous substrate whose chemical composition is different from that of GaN, and a GaN thin film having a thickness of 0.1 ⁇ m or more and 100 ⁇ m or less and bonded to the heterogeneous substrate. It discloses, as a specific example thereof, a GaN-thin-film-bonded substrate having a diameter of 50.8 mm and including a sapphire substrate and a GaN thin film having a thickness of 0.1 ⁇ m or 100 ⁇ m and bonded to the sapphire substrate.
  • Japanese Patent Laying-Open No. 2010-182936 discloses a composite substrate to be used as a substrate for a semiconductor device.
  • the composite substrate includes a support substrate, a nitride semiconductor layer, and a joint layer disposed between the support substrate and the nitride semiconductor layer. It discloses, as a specific example thereof, a composite substrate having a diameter of 50.8 mm and including a sapphire substrate, a GaN layer, and a joint layer formed by press fitting between the substrate and the GaN layer, in which the GaN layer has a thickness of 5 ⁇ m to 220 ⁇ m.
  • the free-standing group III nitride substrate disclosed in Japanese Patent Laying-Open No. 2009-126722 involves problems that the substrate is manufactured at high cost and therefore very expensive, and that the substrate is likely to crack, resulting in difficulty in increasing the diameter of the substrate and decreasing the thickness thereof. Further, it is necessary to reduce the thickness of the free-standing group III nitride substrate when a semiconductor device is to be formed, which is accompanied by a problem of an increase in manufacturing cost due to a process step such as grinding of the rear surface (a main surface opposite to a main surface on which a group III nitride layer is formed for implementing device functions, and this definition of the rear surface is applied hereinafter) of the free-standing group III nitride substrate.
  • the thickness of the GaN thin film is preferably 10 ⁇ m or more.
  • An increase in thickness of the GaN thin film involves a problem that the variation in depth to which ions are implanted from the main surface increases, which accordingly increases the variation in thickness of the GaN thin film in the resultant GaN-thin-film-bonded substrate.
  • the GaN-thin-film composite substrate disclosed in Japanese Patent Laying-Open No. 2008-010766 and the composite substrate disclosed in Japanese Patent Laying-Open No. 2010-182936 are each a composite substrate in which a film or layer of group III nitride is joined onto a support substrate, and are therefore likely to have a large temperature variation on the main surface of the substrate when the group III nitride layer is formed on the substrate for manufacturing a group III nitride semiconductor device, as compared with the free-standing group III nitride substrate disclosed in Japanese Patent Laying-Open No. 2009-126722. Accordingly, the above-referenced composite substrates suffer from a problem of difficulty in increasing the yield of semiconductor devices to be manufactured, if the diameter of the substrate is increased.
  • An object of Reference Invention II is to solve the above problems and thereby provide a low-cost and large-diameter group III nitride composite substrate which includes a thick group III nitride film and has a small temperature variation (namely unevenness, and this definition of the variation is applied hereinafter) on a main surface when a group III nitride layer is grown, to enable reduction of the cost of manufacturing a semiconductor device and enable group III nitride semiconductor devices to be manufactured with a high yield, and provide a method for manufacturing the group III nitride composite substrate, a laminated group III nitride composite substrate, as well as a group III nitride semiconductor device and a method for manufacturing the same.
  • Reference Invention II provides a group III nitride composite substrate with a diameter of 75 mm or more including a support substrate and a group III nitride film having a thickness of 10 ⁇ m or more and 250 ⁇ m or less that are bonded to each other, a mean value m S of a root mean square roughness of a support-substrate-side main surface being 0.3 nm or more and 20 nm or less, and a ratio s S /m S of a standard deviation s S of the root mean square roughness, to the mean value m S of the root mean square roughness of the support-substrate-side main surface, being 0.005 or more and 0.4 or less.
  • a mean value m III-N of a root mean square roughness of a group III-nitride-film-side main surface may be 0.15 nm or more and 3 nm or less, and a ratio s III-N /m III-N of a standard deviation s III-N of the root mean square roughness, to the mean value m III-N of the root mean square roughness of the group III-nitride-film-side main surface, may be 0.008 or more and 0.5 or less.
  • a ratio W/D of a warp W of the support-substrate-side main surface to the diameter D may be ⁇ 7 ⁇ 10 ⁇ 4 or more and 8 ⁇ 10 ⁇ 4 or less.
  • a ratio ⁇ III-N / ⁇ s of a thermal expansion coefficient ⁇ III-N of the group III nitride film to a thermal expansion coefficient ⁇ S of the support substrate may be 0.75 or more and 1.25 or less, and a ratio t III-N /t S of a thickness t III-N of the group III nitride film to a thickness t S of the support substrate may be 0.02 or more and 1 or less.
  • the support substrate may have a thermal conductivity ⁇ S of 3 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or more and 280 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or less.
  • the support substrate may have a Young's modulus E S of 150 GPa or more and 500 GPa or less.
  • the diameter may be 100 mm or more. Further, the diameter may be 125 mm or more and 300 mm or less.
  • Reference Invention II provides a laminated group III nitride composite substrate including the group III nitride composite substrate according to the above aspect, and at least one group III nitride layer disposed on the group III-nitride-film-side main surface of the group III nitride composite substrate.
  • Reference Invention II provides a group III nitride semiconductor device including the group III nitride film in the group III nitride composite substrate according to the above aspect, and at least one group III nitride layer disposed on the group III nitride film.
  • Reference Invention II provides a method for manufacturing a group III nitride composite substrate according to the above aspect, including the steps of: forming a joined substrate with a diameter of 75 mm or more by bonding a support substrate and a group III nitride film donor substrate to each other; forming the group III nitride composite substrate by cutting the group III nitride film donor substrate in the joined substrate along a plane located inwardly at a predetermined distance from a bonded main surface of the group III nitride film donor substrate; and adjusting the root mean square roughness of the support-substrate-side main surface by polishing the support-substrate-side main surface of the group III nitride composite substrate before, in, or after any one of the above steps.
  • Reference Invention II provides a method for manufacturing a group III nitride composite substrate according to the above aspect, including the steps of: forming a joined substrate with a diameter of 75 mm or more by bonding a support substrate and a group III nitride film donor substrate to each other; forming the group III nitride composite substrate by performing at least one of grinding, polishing, and etching on a main surface of the group III nitride film donor substrate in the joined substrate, the main surface being opposite to a bonded main surface of the group III nitride film donor substrate; and adjusting the root mean square roughness of the support-substrate-side main surface by polishing the support-substrate-side main surface of the group III nitride composite substrate before, in, or after any one of the above steps.
  • Reference Invention II provides a method for manufacturing a group III nitride semiconductor device, including the steps of: preparing a group III nitride composite substrate according to the above aspect; and growing at least one group III nitride layer on a group III-nitride-film-side main surface of the group III nitride composite substrate.
  • the method for manufacturing a group III nitride semiconductor device may further include the step of removing the support substrate from the group III nitride composite substrate, after the step of growing the group III nitride layer. It may further include the step of bonding a device support substrate onto the group III nitride layer, after the step of growing the group III nitride layer and before the step of removing the support substrate.
  • Reference Invention II can provide a low-cost and large-diameter group III nitride composite substrate which includes a thick group III nitride film and has a small temperature variation on a main surface when a group III nitride layer is grown, to enable reduction of the cost of manufacturing a semiconductor device and enable group III nitride semiconductor devices to be manufactured with a high yield, and provide a method for manufacturing the group III nitride composite substrate, a laminated group III nitride composite substrate, as well as a group III nitride semiconductor device and a method for manufacturing the same.
  • a group III nitride composite substrate 1 which is a reference embodiment of Reference Invention II is a group III nitride composite substrate 1 with a diameter of 75 mm or more including a support substrate 11 and a group III nitride film 13 having a thickness of 10 ⁇ m or more and 250 ⁇ m or less that are bonded to each other, a mean value m S of a root mean square roughness (hereinafter also referred to as RMS) of a support-substrate 11 -side main surface 11 n , which is a main surface on the support-substrate side, is 0.3 nm or more and 20 nm or less, and a ratio s S /m S of a standard deviation s S of the RMS, to the mean value m S of the RMS of support-substrate 11 -side main surface 11 n , is 0.005 or more and 0.4 or less.
  • RMS root mean square roughness
  • group III nitride composite substrate 1 in the present reference embodiment the temperature variation (namely unevenness) on the main surface is small when a group III nitride layer is grown for manufacturing a group III nitride semiconductor device, and therefore, the group III nitride layer having a high crystal quality can be grown.
  • high-quality group III nitride semiconductor devices can be manufactured with a high yield. This will be described in more detail in the following.
  • group III nitride composite substrate 1 in the present reference embodiment has a structure in which group III nitride film 13 is bonded onto support substrate 11 .
  • a susceptor (not shown) including a temperature raising apparatus is arranged so that support-substrate 11 -side main surface 11 n , which corresponds to the rear side of group III nitride composite substrate 1 , is opposite to a main surface of the susceptor, and at least one group III nitride layer 20 is grown on a group III-nitride-film 13 -side main surface 13 m , which corresponds to the front side of group III nitride composite substrate 1 .
  • Group III nitride composite substrate 1 in the present reference embodiment has a diameter of 75 mm or more, group III nitride film 13 bonded onto support substrate 11 of the composite substrate has a thickness of 10 ⁇ m or more and 250 ⁇ m or less, mean value m S of the RMS of support-substrate 11 -side main surface 11 n is 0.3 nm or more and 20 nm or less, and a ratio s S /m S of standard deviation s S of the RMS, to mean value m S of the RMS of support-substrate 11 -side main surface 11 n is 0.005 or more and 0.4 or less.
  • group III-nitride-film 13 -side main surface 13 m of large-diameter group III nitride composite substrate 1 uniform and large-diameter group III nitride layer 20 having a high crystal quality can be grown, and therefore, group III nitride semiconductor devices having excellent characteristics can be manufactured with a high yield.
  • the manner in which support substrate 11 and group III nitride film 13 are bonded to each other in group III nitride composite substrate 1 is not particularly limited. In order to increase the joint strength of the bonding, however, it is preferable to provide a joint film 12 between the support substrate and the group III nitride film.
  • the thickness of group III nitride film 13 of group III nitride composite substrate 1 in the present reference embodiment is 10 ⁇ m or more and 250 ⁇ m or less.
  • the thickness of group III nitride film 13 refers to the mean value calculated from the thicknesses measured at 13 measurement points on main surface 13 m of group III nitride film 13 shown in FIG. 7 .
  • group III nitride film 13 In order to grow a group III nitride layer having a high crystal quality, group III nitride film 13 needs a thickness of 10 ⁇ m or more, preferably 30 ⁇ m or more, more preferably 80 ⁇ m or more, and still more preferably 100 ⁇ m or more. Meanwhile, in order to reduce the cost of the material for group III nitride composite substrate 1 , group III nitride film 13 needs a thickness of 250 ⁇ m or less, preferably 200 ⁇ m or less, more preferably 180 or less, and still more preferably 130 ⁇ m or less.
  • group III nitride composite substrate 1 in the present reference embodiment has a diameter of 75 mm or more.
  • group III nitride composite substrate 1 In order to produce a greater number of semiconductor device chips from one composite substrate, group III nitride composite substrate 1 needs a diameter of 75 mm or more, preferably 100 mm or more, more preferably 125 mm or more, and still more preferably 150 mm or more. Meanwhile, in order to reduce the warp of the composite substrate and increase the yield of semiconductor devices, the diameter of group III nitride composite substrate 1 is preferably 300 mm or less, and more preferably 200 mm or less.
  • group III nitride composite substrate 1 in the present reference embodiment has a mean value m S of the RMS of support-substrate 11 -side main surface 11 n of 0.3 nm or more and 20 nm or less, and a ratio s S /m S of standard deviation s S of the RMS to mean value m S of the RMS of support-substrate 11 -side main surface 11 n of 0.005 or more and 0.4 or less.
  • support-substrate 11 -side main surface 11 n which is the rear side of group III nitride composite substrate 1
  • support-substrate 11 -side main surface 11 n needs a mean value m S of the RMS of 20 nm or less, preferably 10 nm or less, and more preferably 5 nm or less, and a ratio s S /m S of standard deviation s S of the RMS to mean value m S of the RMS of 0.4 or less, preferably 0.3 or less, and more preferably 0.2 or less.
  • support-substrate 11 -side main surface 11 n which is the rear side of group III nitride composite substrate 1
  • support-substrate 11 -side main surface 11 n needs a mean value m S of the RMS of 0.3 nm or more, preferably 0.5 nm or more, and more preferably 1 nm or more, and a ratio s S /m S of standard deviation s S of the RMS to mean value m S of the RMS of 0.005 or more, preferably 0.01 or more, and more preferably 0.05 or more.
  • mean value m S and standard deviation s S of the RMS of support-substrate 11 -side main surface 11 n of group III nitride composite substrate 1 are respectively the arithmetic mean and the standard deviation that are calculated from the RMS measured at the 13 measurement points P on main surface 11 n of support substrate 11 .
  • the 7 are constituted, regardless of the magnitude of the diameter of support substrate 11 : one central point P C ; four outer points P O located respectively in the four directions with respect to central point P C that are orthogonal to each other, the outer points each being located at 5 mm inward from the outer edge of the substrate; and eight middle points P M including four middle points each between the one central point P C and one of the four outer points P O and four middle points each between two of the four outer points P O .
  • the standard deviation refers to the positive square root of unbiased variance.
  • the RMS measured at the 13 measurement points P on main surface 11 n of support substrate 11 shown in FIG. 7 refers to the positive square root of the mean of respective squares of the distances to the points from a reference plane which is calculated from each point in a measurement region having a size of 85 ⁇ m ⁇ 85 ⁇ m in which measurement point P is located at the center, and is measured by means of an AFM (Atomic Force Microscope), an interferometric roughness meter, a laser microscope, a stylus-based roughness meter, or the like.
  • AFM Anatomic Force Microscope
  • mean value m S and standard deviation s S of the RMS of support-substrate 11 -side main surface 11 n of group III nitride composite substrate 1 can be adjusted, as described later herein, by physical properties of abrasives, a surface plate, and a polishing pad for polishing main surface 11 n of support substrate 11 , the shapes of the surface plate and the polishing pad, and polishing conditions.
  • group III nitride composite substrate 1 in the present reference embodiment preferably has a mean value m III-N of the RMS of group III-nitride-film 13 -side main surface 13 m of 0.15 nm or more and 3 nm or less, and preferably has a ratio s III-N /m III-N of standard deviation of the RMS to mean value of the RMS of group III-nitride-film 13 -side main surface 13 m of 0.008 or more and 0.5 or less.
  • mean value of the RMS is preferably 3 nm or less, more preferably 2 nm or less, and still more preferably 1.6 nm or less, and ratio s III-N /m III-N of standard deviation s III-N of the RMS to mean value m III-N of the RMS is preferably 0.5 or less, more preferably 0.4 or less, and still more preferably 0.2 or less.
  • mean value m III-N of the RMS is preferably 0.15 nm or more, more preferably 0.4 nm or more, and still more preferably 0.8 nm or more, and ratio s III-N /m III-N of standard deviation s III-N of the RMS to mean value m III-N of the RMS is preferably 0.008 or more, more preferably 0.02 or more, and still more preferably 0.05 or more.
  • mean value m III-N and standard deviation s III-N of the RMS of group III-nitride-film 13 -side main surface 13 m of group III nitride composite substrate 1 are respectively the arithmetic mean and the standard deviation that are calculated from the RMS measured at the 13 measurement points P on main surface 13 m of group III nitride film 13 .
  • the 7 are constituted, regardless of the magnitude of the diameter of group III nitride film 13 : one central point P C ; four outer points P O located respectively in the four directions with respect to central point P C that are orthogonal to each other, the outer points each being located at 5 mm inward from the outer edge of the substrate; and eight middle points P M including four middle points each between the one central point P C and one of the four outer points P O and four middle points each between two of the four outer points P O .
  • the standard deviation refers to the positive square root of unbiased variance.
  • the RMS measured at the 13 measurement points P on main surface 13 m of group III nitride film 13 shown in FIG. 7 refers to the positive square root of the mean of respective squares of the distances to the points from a reference plane which is calculated from each point in a measurement region having a size of 85 ⁇ m ⁇ 85 ⁇ m in which measurement point P is located at the center, and is measured by means of an AFM (Atomic Force Microscope), an interferometric roughness meter, a laser microscope, a stylus-based roughness meter, or the like.
  • AFM Anamic Force Microscope
  • mean value m III-N and standard deviation s III-N of the RMS of group III-nitride-film 13 -side main surface 13 m of group III nitride composite substrate 1 can be adjusted, as described later herein, by physical properties of abrasives, a surface plate, and a polishing pad for polishing main surface 13 m of group III nitride film 13 , the shapes of the surface plate and the polishing pad, and polishing conditions.
  • a ratio W/D of a warp W of support-substrate 11 -side main surface 11 n to a diameter D is preferably ⁇ 7 ⁇ 10 ⁇ 4 or more and 8 ⁇ 10 ⁇ 4 or less, more preferably ⁇ 4 ⁇ 10 ⁇ 4 or more and 5 ⁇ 10 ⁇ 4 or less, still more preferably ⁇ 2.5 ⁇ 10 ⁇ 4 or more and 3 ⁇ 10 ⁇ 4 or less, and particularly preferably ⁇ 1 ⁇ 10 ⁇ 4 or more and 1.5 ⁇ 10 ⁇ 4 or less.
  • a concave warp of support-substrate 11 -side main surface 11 n is herein indicated with the + (positive) sign
  • a convex warp of support-substrate 11 -side main surface 11 n is herein indicated with the ⁇ (negative) sign.
  • ratio W/D of warp W of support-substrate 11 -side main surface 11 n to diameter D of group III nitride composite substrate 1 is a small value of preferably ⁇ 7 ⁇ 10 ⁇ 4 or more and 8 ⁇ 10 ⁇ 4 or less, more preferably ⁇ 4 ⁇ 10 ⁇ 4 or more and 5 ⁇ 10 ⁇ 4 or less, still more preferably ⁇ 2.5 ⁇ 10 ⁇ 4 or more and 3 ⁇ 10 ⁇ 4 or less, and particularly preferably ⁇ 1 ⁇ 10 ⁇ 4 or more and 1.5 ⁇ 10 ⁇ 4 or less, heat is uniformly transmitted to the whole of support-substrate 11 -side main surface 11 n of large-diameter group III nitride composite substrate 1 , from the main surface of the susceptor with its temperature increased, when a group III nitride layer is grown on group III-nitride-film 13 -side main surface 13 m of group III nitride composite substrate 1 , and therefore, the whole of group III nitride composite substrate
  • group III-nitride-film 13 -side main surface 13 m which is the front side of group III nitride composite substrate 1 has a small variation and uniformity.
  • a uniform and large-diameter group III nitride layer having a high crystal quality can be grown on group III-nitride-film 13 -side main surface 13 m of group III nitride composite substrate 1 .
  • group III nitride semiconductor devices having excellent characteristics can be manufactured with a high yield.
  • a ratio t III-N /t S of a thickness t III-N of group III nitride film 13 to a thickness t S of support substrate 11 is preferably 0.02 or more and 1 or less, more preferably 0.1 or more and 0.6 or less, and still more preferably 0.2 or more and 0.4 or less.
  • Thickness t S of support substrate 11 and thickness t III-N of group III nitride film 13 can be measured through observation of a cross section of the film with an optical microscope and/or an SEM or with a digital indicator, or the like.
  • ratio t III-N / ⁇ S is 0.85 or more and 1.15 or less and ratio t III-N /t S is 0.1 or more and 0.6 or less, and it is further preferable that ratio ⁇ III-N / ⁇ S is 0.95 or more and 1.05 or less and ratio t III-N /t S is 0.2 or more and 0.4 or less.
  • Support substrate 11 included in group III nitride composite substrate 1 in the present reference embodiment is not particularly limited as long as support substrate 11 can support group III nitride film 13 .
  • the support substrate is preferably a hetero-composition substrate whose chemical composition is different from that of the group III nitride.
  • thermal conductivity ⁇ S of support substrate 11 is preferably 3 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or more and 280 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or less, more preferably 5 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or more and 210 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or less, and still more preferably 10 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or more and 120 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or less.
  • thermal conductivity ⁇ S of support substrate 11 can be measured by a laser flash method.
  • Group III nitride composite substrate 1 having support substrate 11 with a thermal conductivity ⁇ S of preferably 3 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or more, more preferably 5 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or more, and still more preferably 10 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or more, can efficiently transmit heat from the main surface of the susceptor to main surface 13 m of group III nitride film 13 of group III nitride composite substrate 1 , when a group III nitride layer is grown.
  • Support substrate 11 having a thermal conductivity ⁇ S of 280 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or less can more uniformly transmit the heat from the main surface of the susceptor to the whole main surface of group III nitride film 13 of group III nitride composite substrate 1 when a group III nitride layer is grown, as compared with the case where an SiC substrate having a thermal conductivity ⁇ S of about 300 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 is used as the support substrate.
  • support substrate 11 has a Young's modulus E S of preferably 150 GPa or more and 500 GPa or less, and more preferably 200 GPa or more and 350 GPa or less.
  • Young's modulus E S of support substrate 11 can be measured by a resonance method.
  • Group III nitride composite substrate 1 having support substrate 11 with a Young's modulus E S of preferably 150 GPa or more and more preferably 200 GPa or more can suppress occurrence of warp to group III nitride composite substrate 1 and/or a group III nitride layer, when a group III nitride semiconductor device is formed by growing the group III nitride layer on the composite substrate.
  • Group III nitride composite substrate 1 having support substrate 11 with a Young's modulus E S of preferably 500 GPa or less and more preferably 350 GPa or less can suppress occurrence of warp and/or cracks to group III nitride composite substrate 1 and/or a group III nitride layer, when a group III nitride semiconductor device is formed by growing the group III nitride layer on the composite substrate.
  • Support substrate 11 is preferably a substrate formed of mullite (3Al 2 O 3 .2SiO 2 -2Al 2 O 3 .SiO 2 ), a substrate formed of mullite-YSZ (Yttria Stabilized Zirconia), a substrate formed of spinel (MgAl 2 O 4 ), a substrate formed of a sintered body of an Al 2 O 3 —SiO 2 -based composite oxide, and substrates formed respectively of sintered bodies of them to which oxide, carbonate or the like is added, a molybdenum (Mo) substrate, a tungsten (W) substrate, or the like.
  • mullite 3Al 2 O 3 .2SiO 2 -2Al 2 O 3 .SiO 2
  • mullite-YSZ Yttria Stabilized Zirconia
  • MgAl 2 O 4 a substrate formed of a sintered body of an Al 2 O 3 —SiO 2 -based composite oxide
  • preferred elements to be contained in the oxide and the carbonate are Ca, Mg, Sr, Ba, Al, Sc, Y, Ce, Pr, Si, Ti, Zr, V, Nb, Ta, Cr, Mn, Fe, Co, Ni, Cu, Zn, and the like.
  • Support substrate 11 may include any of single crystal, polycrystal, and amorphous material. It preferably includes polycrystal, since removal by grinding or etching when a device is to be formed is easy and the strength by which warp or cracks can be suppressed can be maintained.
  • a joint film 12 which may be included in group III nitride composite substrate 1 in the present reference embodiment is not particularly limited as long as the joint film can join support substrate 11 and group III nitride film 13 to each other.
  • Joint film 12 is preferably SiO 2 film, Si 3 N 4 film, TiO 2 film, Ga 2 O 3 film, or the like because these films have a high joining ability for joining support substrate 11 and group III nitride film 13 to each other.
  • the thickness of group III nitride film 13 needs to be 10 ⁇ m or more, preferably 30 ⁇ m or more, more preferably 80 ⁇ m or more, and still more preferably 100 ⁇ m or more, as described above. Meanwhile, in order to reduce the amount of use of the expensive group III nitride, the thickness of group III nitride film 13 is 250 ⁇ m or less, preferably 200 ⁇ m or less, more preferably 180 ⁇ m or less, and particularly preferably 130 ⁇ m or less, as described above.
  • the crystal structure of group III nitride film 13 is preferably the wurtzite structure, since it enables semiconductor devices having excellent characteristics to be produced.
  • the predetermined plane orientation to which the main surface of group III nitride film 13 is closest is not limited as long as it is suitable for a desired semiconductor device, and may be any of ⁇ 0001 ⁇ , ⁇ 10-10 ⁇ , ⁇ 11-20 ⁇ , ⁇ 21-30 ⁇ , ⁇ 20-21 ⁇ , ⁇ 10-11 ⁇ , ⁇ 11-22 ⁇ , and ⁇ 22-43 ⁇ , as well as plane orientations that are 15° or less off (displaced by an angle of 15° or less) from these plane orientations, respectively.
  • impurity metal atoms of main surface 13 m of group III nitride film 13 are preferably 1 ⁇ 10 13 atoms/cm 2 or less, more preferably 3 ⁇ 10 12 atoms/cm 2 or less, still more preferably 1 ⁇ 10 12 atoms/cm 2 or less, and particularly preferably 1 ⁇ 10 11 atoms/cm 2 or less.
  • Group III nitride composite substrate 1 which includes support substrate 11 such as a substrate of mullite (3Al 2 O 3 .2SiO 2 -2Al 2 O 3 .SiO 2 ), mullite-YSZ (Yttria Stabilized Zirconia), spinel (MgAl 2 O 4 ), a sintered body of an Al 2 O 3 —SiO 2 -based composite oxide, or the like is preferably subjected to cleaning that suppresses elution of metal atoms from support substrate 11 , such as scrub cleaning with a surfactant and/or pure water, two-fluid cleaning, or megasonic cleaning (cleaning with ultrasonic waves in a megasonic frequency range of 500 kHz to 5 MHz), as well as cleaning of a single side (the single side is main surface 13 m of group III nitride film 13 ) such as sheet-fed cleaning with low-concentration acid and/or alkali, for example, to thereby reduce the concentration of impurity
  • the impurities are preferably Cl atoms of 2 ⁇ 10 14 atoms/cm 2 or less, preferably Si atoms of 9 ⁇ 10 13 atoms/cm 2 or less.
  • the dislocation density of group III nitride film 13 is not particularly limited. In order to reduce leak current of the semiconductor device, the dislocation density is preferably 1 ⁇ 10 8 cm ⁇ 2 or less, and more preferably 1 ⁇ 10 7 cm ⁇ 2 or less.
  • the carrier concentration of group III nitride film 13 is not particularly limited. In order to reduce the resistance of the semiconductor device, the carrier concentration is preferably 1 ⁇ 10 17 cm ⁇ 3 or more, and more preferably 1 ⁇ 10 18 cm ⁇ 3 or more.
  • a laminated group III nitride composite substrate 2 which is another reference embodiment of Reference Invention II includes group III nitride composite substrate 1 of Reference Embodiment II-1, and at least one group III nitride layer 20 disposed on group III-nitride-film 13 -side main surface 13 m of group III nitride composite substrate 1 .
  • Laminated group III nitride composite substrate 2 in the present reference embodiment includes group III nitride composite substrate 1 having a small mean value m S and a small standard deviation s S of the RMS of support-substrate 11 -side main surface 11 n , as well as group III nitride layer 20 having a high crystal quality grown and thereby disposed on composite substrate 1 . Therefore, semiconductor devices having excellent characteristics can be produced with a high yield.
  • group III nitride layer 20 may be configured to include, for example, a GaN layer 26 and an Al 0.2 Ga 0.8 N layer 27 .
  • a group III nitride semiconductor device 4 which is still another reference embodiment of Reference Invention II includes group III nitride film 13 in the group III nitride composite substrate of Reference Embodiment II-1, and at least one group III nitride layer 20 disposed on group III nitride film 13 .
  • Group III nitride semiconductor device 4 of the present reference embodiment includes group III nitride film 13 in group III nitride composite substrate 1 having a small mean value m S and a small standard deviation s S of the RMS of support-substrate 11 -side main surface 11 n , as well as group III nitride layer 20 having a high crystal quality grown and thereby disposed on composite substrate 1 . Therefore, semiconductor device 4 has excellent characteristics.
  • group III nitride layer 20 may be configured to include, for example, a GaN layer 26 and an Al 0.2 Ga 0.8 N layer 27 .
  • group III nitride layer 20 may be configured to include, for example, an n + -GaN layer 28 (having a carrier concentration for example of 2 ⁇ 10 18 cm ⁇ 3 ) and an n ⁇ -GaN layer 29 (having a carrier concentration for example of 5 ⁇ 10 15 cm ⁇ 3 ).
  • Other examples of electronic devices may include PND (PN diode), transistor, and the like.
  • the above-described semiconductor devices may either be a vertical type or be a lateral type.
  • a method for manufacturing a group III nitride composite substrate which is a further reference embodiment of Reference Invention II is a method for manufacturing group III nitride composite substrate 1 of Reference Embodiment II-1, including the steps of: forming a joined substrate 1 L, 1 LS having a diameter of 75 mm or more by bonding support substrate 11 and a group III nitride film donor substrate 13 D to each other ( FIG. 12 (A) to (C) and FIG.
  • group III nitride composite substrate 1 by cutting group III nitride film donor substrate 13 D in joined substrate 1 L, 1 LS along a plane located inwardly at a predetermined distance from the bonded main surface of group III nitride film donor substrate 13 D ( FIG. 12 (D), FIG. 13 (D)); and adjusting the RMS of support-substrate 11 -side main surface 11 n by polishing support-substrate 11 -side main surface 11 n of group III nitride composite substrate 1 before, in, or after any one of the above-described steps.
  • the method for manufacturing group III nitride composite substrate 1 in the present reference embodiment can efficiently manufacture low-cost and large-diameter group III nitride composite substrate 1 having a thick group III nitride film and a small temperature variation on the main surface when a group III nitride layer is grown, to enable group III nitride semiconductor devices to be manufactured with a high yield.
  • the predetermined distance of the plane located inwardly from the bonded main surface of group III nitride film donor substrate 13 D, for cutting group III nitride film donor substrate 13 D along the plane at this distance is determined depending on the thickness of group III nitride film 13 of group III nitride composite substrate 1 to be manufactured.
  • group III nitride film donor substrate 13 D is cut to form group III nitride film 13 , and thereafter at least one of grinding, polishing, and etching can be performed on the main surface 13 m of group III nitride film 13 opposite to bonded main surface 13 n thereof, to thereby reduce the thickness of group III nitride film 13 .
  • the method for polishing is preferably precision polishing based on CMP (Chemical Mechanical Polishing), chemical polishing, or the like.
  • the predetermined distance of the plane located inwardly from bonded main surface 13 n of group III nitride film donor substrate 13 D, for cutting group III nitride film donor substrate 13 D along the plane at this distance is preferably the sum determined by adding a polishing allowance, which is a portion to be removed away by polishing, to the thickness of group III nitride film 13 of group III nitride composite substrate 1 to be manufactured.
  • group III nitride film donor substrate 13 D is cut along a plane located inwardly at a predetermined distance from bonded main surface 13 n of group III nitride film donor substrate 13 D in joined substrate 1 L, 1 LS, and preferably at least one of grinding, polishing, and etching is performed on the main surface 13 m which is opposite to bonded main surface 13 n of group III nitride film 13 , to thereby adjust the film thickness by reducing it. Accordingly, group III nitride composite substrate 1 including group III nitride film 13 having a desired thickness of 10 ⁇ m or more and 250 ⁇ m or less can be obtained.
  • the step of forming joined substrate 1 L, 1 LS includes the sub step of forming a joint film 12 a on a main surface 11 m of support substrate 11 ( FIG. 12 (A), FIG. 13 (A)), the sub step of forming a joint film 12 b on a main surface 13 n of group III nitride film donor substrate 13 D ( FIG. 12 (B), FIG.
  • CVD is particularly preferred since it enhances the quality of the joint film and enhances the film deposition rate.
  • P-CVD Pullasma-Chemical Vapor Deposition
  • PE-CVD Pullasma Enhanced-Chemical Vapor Deposition
  • LP-CVD Low Pressure-Chemical Vapor Deposition
  • AP-CVD Almospheric Pressure-Chemical Vapor Deposition
  • annealing may be performed after joint films 12 a , 12 b are formed and before they are joined together. This annealing can degas joint films 12 a , 12 b to thereby densify joint films 12 a , 12 b.
  • main surface 12 am of joint film 12 a is preferably mirror-polished (into a mirror-finished surface having an RMS of 0.3 nm or less).
  • the method for polishing main surface 12 am of joint film 12 a is not particularly limited.
  • CMP Chemical Mechanical Polishing
  • non-abrasive polishing may be performed, after CMP, with a solution containing no abrasive.
  • non-abrasive polishing may be performed by means of an alkali such as KOH, TMAH (tetramethylammonium hydroxide), or an acid such as HCl, HNO 3 , H 2 SO 4 .
  • an alkali such as KOH, TMAH (tetramethylammonium hydroxide), or an acid such as HCl, HNO 3 , H 2 SO 4 .
  • scrub cleaning using sponge, brush, or the like may be performed.
  • two-fluid cleaning, megasonic cleaning, ultrasonic cleaning, or the like may suitably be performed.
  • group III nitride film donor substrate 13 D is a donor substrate which is to provide group III nitride film 13 in the subsequent sub step.
  • the method for preparing this group III nitride film donor substrate 13 D is not particularly limited.
  • group III nitride film donor substrate 13 D of a high crystal quality suitable methods are gas phase methods such as HYPE (Hydride Vapor Phase Epitaxy), MOVPE (Metal Organic Vapor Phase Epitaxy), MBE (Molecular Beam Epitaxy), and sublimation method, as well as liquid phase methods such as flux method, high nitrogen pressure solution method, ammonothermal method, and the like.
  • gas phase methods such as HYPE (Hydride Vapor Phase Epitaxy), MOVPE (Metal Organic Vapor Phase Epitaxy), MBE (Molecular Beam Epitaxy), and sublimation method
  • liquid phase methods such as flux method, high nitrogen pressure solution method, ammonothermal method, and the like.
  • Group III nitride film donor substrate 13 D prepared in this way is not particularly limited.
  • the donor substrate preferably has a degree of crystal quality substantially identical to that of group III nitride film 13 to be provided.
  • joint film 12 b as well as polishing of a main surface 12 bn of joint film 12 b are similar to the material and the method for forming the above-described joint film 12 a as well as polishing of main surface 12 am of joint film 12 a.
  • the method for bonding them together is not particularly limited. Suitable methods include: a direct bonding method according to which respective surfaces to be bonded to each other are cleaned, directly bonded together, and thereafter heated to approximately 600° C. to 1200° C.
  • a surface activated bonding method according to which the surfaces to be bonded to each other are cleaned, subjected to an activation treatment by means of plasma or ions, and thereafter joined together under a low-temperature atmosphere of room temperature (25° C.
  • any of the above-referenced bonding methods can increase the temperature to approximately 600° C. to 1200° C. after the joint films are joined together to thereby further increase the joint strength.
  • the surface activated bonding method, the high pressure bonding method, and the high vacuum bonding method exhibit a higher effect of increasing the joint strength through the heating to approximately 600° C. to 1200° C. after the joint films are joined together.
  • joint film 12 a and joint film 12 b are joined together and thereby integrated into joint film 12 .
  • Support substrate 11 and group III nitride film donor substrate 13 D are joined together with joint film 12 interposed therebetween to thereby form joined substrate 1 L, 1 LS.
  • Respective main surfaces 12 am and 12 bn of joint films 12 a and 12 b to be bonded to each other can thus be activated before being bonded to each other, to thereby increase the joint strength.
  • Activation of main surfaces 12 am and 12 bn to be bonded is not particularly limited.
  • the surfaces are preferably activated through plasma treatment, ion treatment, chemical treatment by means of a chemical solution, cleaning, CMP treatment, and the like, since they have a high activation effect.
  • group III nitride film donor substrate 13 D is cut along a plane located inwardly at a predetermined distance from bonded main surface 13 n of group III nitride film donor substrate 13 D in joined substrate 1 L, 1 LS. Accordingly, the donor substrate is separated into group III nitride film 13 , which is joined to support substrate 11 with joint film 12 interposed therebetween, and a remaining group III nitride film donor substrate 13 Dr.
  • group III nitride composite substrate 1 in which support substrate 11 and group III nitride film 13 are bonded to each other with joint film 12 interposed therebetween is formed.
  • the method for cutting group III nitride film donor substrate 13 D is not particularly limited, and may be any of the methods such as wire saw, blade saw, laser processing, electrical discharge processing, water jet, and the like.
  • group III nitride film donor substrate 13 D As to cutting of group III nitride film donor substrate 13 D by means of a wire saw, it is preferable to use a fixed-abrasive wire in order to flatly cut group III nitride film donor substrate 13 D of a large diameter, and it is preferable to use a thin wire in order to reduce a cutting allowance, which is a portion to be removed away through cutting. For reduction of the cutting allowance, loose-abrasive processing is preferred.
  • the wire and vibrate group III nitride film donor substrate 13 D in synchronization therewith, in order to reduce the cut resistance and thereby improve the thickness precision and the flatness.
  • the cutting resistance can be reduced in the following manner. In the case where the wire saw is positioned at a right angle or an angle close thereto relative to the direction in which group III nitride film donor substrate 13 D is cut, group III nitride film donor substrate 13 D is moved along the direction in which it is cut.
  • the group III nitride such as GaN is more brittle and more prone to crack as compared with sapphire, SiC, and the like, and therefore cannot be cut appropriately by a cutting method similar to that used for sapphire and SiC. It is therefore necessary for cutting of the group III nitride to further reduce the cut resistance.
  • the resistance coefficient R (unit: N) is within an appropriate range, specifically a range of 4000 N or more and 5000 N or less.
  • group III nitride composite substrate 1 obtained through the cutting, respective main surfaces of group III nitride film 13 and support substrate 11 can be polished so that a desired thickness and the uniformity of them are obtained.
  • group III nitride composite substrate 1 can be secured by means of suction or a back pad.
  • Group III nitride composite substrate 1 may also be bonded first to a holding plate and then bonded to a polishing apparatus.
  • mechanical pressurization such as vacuum chuck, air back pressurization, weight or the like can be used to reduce inclination and correct warp.
  • Group III nitride composite substrate 1 may also be secured by means of suction.
  • Group III nitride composite substrate 1 can uniformly be bonded to the polishing apparatus to reduce the thickness variation after polishing.
  • the shape of bonding can be controlled depending on the shape of a polishing surface plate and the shape of the pad to thereby reduce the thickness variation after polishing.
  • the polishing allowance is not particularly limited, but preferably 10 ⁇ m or more, more preferably 20 ⁇ m or more, and still more preferably 30 ⁇ m or more, in order to reduce the thickness variation and remove a damaged layer. Meanwhile, in order to reduce the material loss of group III nitride film donor substrate 13 D, the polishing allowance is preferably 100 ⁇ m or less, more preferably 80 ⁇ m or less, and still more preferably 60 ⁇ m or less.
  • the remaining group III nitride film donor substrate 13 Dr may have its main surface polished so that it can be used repeatedly.
  • a support-incorporated group III nitride film donor substrate 5 D in which a group III nitride film donor substrate support 15 is bonded to group III nitride film donor substrate 13 D can be used to produce a group III nitride composite substrate 1 in a similar manner to the above.
  • Support-incorporated group III nitride film donor substrate 5 D has group III nitride film donor substrate support 15 which supports group III nitride film donor substrate 13 D, and can therefore be used repeatedly even if group III nitride film donor substrate 13 D becomes thinner to such an extent that substrate 13 D cannot stand by itself.
  • group III nitride film donor substrate support 15 and group III nitride film donor substrate 13 D are bonded to each other is not particularly limited. In order to increase the joint strength of the bonding, however, it is preferable to dispose a joint film 14 therebetween.
  • Group III nitride film donor substrate support 15 is also not particularly limited. In order to increase the support strength and prevent occurrence of crack and warp, however, it is preferable that support 15 is formed of a material having similar physical properties to support substrate 11 .
  • joint film 14 is not particularly limited, it may preferably be any of SiO 2 film, Si 3 N 4 film, TiO 2 film, Ga 2 O 3 film, and the like, since these films provide a good joint to group III nitride film donor substrate support 15 and group III nitride film donor substrate 13 D.
  • the method for manufacturing group III nitride composite substrate 1 in the present reference embodiment includes the step of adjusting the RMS of support-substrate 11 -side main surface 11 n by polishing support-substrate 11 -side main surface 11 n of group III nitride composite substrate 1 before, in, or after any one of the above-described steps.
  • support-substrate 11 -side main surface 11 n can have a mean value m S of the RMS of 0.3 nm or more and 20 nm or less, and support-substrate 11 -side main surface 11 n can have a ratio s S /m S of standard deviation s S of the RMS to mean value m S of the RMS of 0.005 or more and 0.4 or less.
  • Mean value m S of the RMS of support-substrate 11 -side main surface 11 n can be controlled by means of the viscosity of the abrasive, the size of abrasive grains, the material and the surface shape of a surface plate and a polishing pad, and the polishing conditions.
  • oil-base abrasives are more preferred relative to water-base abrasives, a higher viscosity of the abrasive is more preferred, a smaller abrasive grain size is more preferred, and a soft surface plate and a soft polishing pad are more preferred.
  • the grooves for sludge removal refer to grooves having a relatively wide width and a relatively wide pitch that are formed for removing away sludge and/or aggregated abrasive grains on the polishing interface.
  • the polishing conditions are preferably a low pressure and a low circumferential velocity.
  • the grooves for making the abrasive uniform refer to grooves having a relatively narrow width and a relatively narrow pitch that are formed for uniformly holding the abrasive in a central portion of the substrate.
  • the method for manufacturing group III nitride composite substrate 1 in the present reference embodiment includes the step of adjusting the RMS of group III-nitride-film 13 -side main surface 13 m by polishing group III-nitride-film 13 -side main surface 13 m of group III nitride composite substrate 1 after the step of forming the group III nitride composite substrate.
  • group III-nitride-film 13 -side main surface 13 m of group III nitride composite substrate 1 can have a mean value m III-N of the RMS of 0.15 nm or more and 3 nm or less, and group III-nitride-film 13 -side main surface 13 m can have a ratio s III-N /m III-N of standard deviation s III-N of the RMS to mean value m III-N of the RMS of 0.008 or more and 0.5 or less.
  • mean value m III-N of the RMS of group III-nitride-film 13 -side main surface 13 m can be controlled by means of the viscosity of the abrasive, the size of abrasive grains, the material and the surface shape of a surface plate and a polishing pad, and the polishing conditions.
  • a higher viscosity of the abrasive is more preferred, a smaller abrasive grain size is more preferred, and a soft surface plate and a soft polishing pad are more preferred.
  • the surface shape of the surface plate and the polishing pad a shape having grooves formed therein for sludge removal is preferred.
  • the polishing conditions are preferably a low pressure and a low circumferential velocity.
  • a viscosity ⁇ (unit: mPa ⁇ S) and a flow rate Q (unit: m 3 /s) of a polishing solution
  • an area S (unit: m 2 )
  • a polishing pressure P (unit: kPa)
  • a circumferential velocity V (unit: m/s) of a surface plate
  • a method for manufacturing a group III nitride composite substrate which is a still further reference embodiment of Reference Invention II, is a method for manufacturing group III nitride composite substrate 1 of the Reference Embodiment II-1, including the steps of: forming joined substrate 1 L having a diameter of 75 mm or more by bonding support substrate 11 and group III nitride film donor substrate 13 D to each other ( FIG. 14 ).
  • group III nitride composite substrate 1 by performing at least one of grinding, polishing, and etching on a main surface of group III nitride film donor substrate 13 D of joined substrate 1 L, the main surface being located opposite to the bonded main surface of group III nitride film donor substrate 13 D ( FIG. 14 (D)); and adjusting the RMS of the support-substrate-side main surface by polishing the support-substrate-side main surface of the group III nitride composite substrate before, in, or after any one of the above-described steps.
  • the method for manufacturing group III nitride composite substrate 1 in the present reference embodiment can efficiently manufacture low-cost and large-diameter group III nitride composite substrate 1 having a thick group III nitride film and a small temperature variation on the main surface when a group III nitride layer is grown, to enable group III nitride semiconductor devices to be manufactured with a high yield.
  • group III nitride composite substrate 1 in the present reference embodiment at least one of grinding, polishing, and etching is performed on the main surface opposite to the bonded main surface of group III nitride film donor substrate 13 D to thereby adjust the thickness by reducing it, and accordingly, group III nitride composite substrate 1 including group III nitride film 13 having a desired thickness of 10 ⁇ m or more and 250 ⁇ m less can be obtained.
  • the thickness of group III nitride film donor substrate 13 D to be used is preferably 500 ⁇ m or less, and more preferably 400 ⁇ m or less.
  • the step of forming joined substrate 1 L includes, similarly to the method for manufacturing a group III nitride composite substrate in Reference Embodiment II-4-1, the sub step of forming joint film 12 a on main surface 11 m of support substrate 11 ( FIG. 14 (A)), the sub step of forming joint film 12 b on main surface 13 n of group III nitride film donor substrate 13 D ( FIG. 14 (B)), and the sub step of bonding main surface 12 am of joint film 12 a formed on main surface 11 m of support substrate 11 and main surface 12 bn of joint film 12 b formed on main surface 13 n of group III nitride film donor substrate 13 D to each other ( FIG. 14 (C)).
  • the sub step of forming joint film 12 a on main surface 11 m of support substrate 11 as shown in FIG. 14 (A) is similar to the sub step of forming joint film 12 a on main surface 11 m of support substrate 11 as shown in FIG. 12 (A).
  • the sub step of forming joint film 12 b on main surface 13 n of group III nitride film donor substrate 13 D as shown in FIG. 14 (B) is similar to the sub step of forming joint film 12 b on main surface 13 n of group III nitride film donor substrate 13 D as shown in FIG. 12 (B).
  • the sub step of bonding main surface 12 am of joint film 12 a formed on main surface 11 m of support substrate 11 and main surface 12 bn of joint film 12 b formed on main surface 13 n of group III nitride film donor substrate 13 D to each other as shown in FIG. 14 (C) is similar to the sub step of bonding main surface 12 am of joint film 12 a formed on main surface 11 m of support substrate 11 and main surface 12 bn of joint film 12 b formed on main surface 13 n of group III nitride film donor substrate 13 D to each other as shown in FIG. 12 (C). Therefore, the description of them will not be repeated.
  • group III nitride composite substrate 1 in the step of forming group III nitride composite substrate 1 , at least one of grinding, polishing, and etching is performed on main surface 13 m opposite to bonded main surface 13 n of group III nitride film donor substrate 13 D in joined substrate 1 L, to thereby form group III nitride film 13 with its thickness reduced, from group III nitride film donor substrate 13 D, and accordingly form group III nitride composite substrate 1 in which support substrate 11 and group III nitride film 13 are bonded together with joint film 12 interposed therebetween.
  • the method for grinding group III nitride film donor substrate 13 D is not particularly limited, and may be grinding by means of one of a grinding wheel and abrasive grains.
  • the method for polishing group III nitride film donor substrate 13 D is not particularly limited, and may be rough polishing such as mechanical polishing, precision polishing such as CMP and chemical polishing, or the like.
  • the method for etching group III nitride film donor substrate 13 D is not particularly limited, and may be wet etching using a chemical solution, dry etching such as RIE (Reactive Ion Etching), or the like.
  • polish main surface 13 m of group III nitride film 13 of group III nitride composite substrate 1 obtained through at least one of grinding and etching is preferably 10 ⁇ m or more, more preferably 20 ⁇ m or more, and still more preferably 30 ⁇ m or more, in order to reduce the thickness variation and remove a damaged layer.
  • the reduction of the thickness by at least one of grinding, polishing, and etching is preferably 100 ⁇ m or less, more preferably 80 ⁇ m or less, and still more preferably 60 ⁇ m or less, in order to reduce the material loss of group III nitride film donor substrate 13 D.
  • the method for manufacturing group III nitride composite substrate 1 in the present reference embodiment includes the step of adjusting the RMS of support-substrate 11 -side main surface 11 n by polishing support-substrate 11 -side main surface 11 n of group III nitride composite substrate 1 before, in, or after any one of the above-described steps.
  • support-substrate 11 -side main surface 11 n can have a mean value m S of the RMS of 0.3 nm or more and 20 nm or less, and support-substrate 11 -side main surface 11 n can have a ratio s S /m S of standard deviation s S of the RMS to mean value m S of the RMS of 0.005 or more and 0.4 or less.
  • control of mean value m S of the RMS of support-substrate 11 -side main surface 11 n and ratio s S /m S of standard deviation s S of the RMS to mean value m S of the RMS of support-substrate 11 -side main surface 11 n is similar to that of the method for manufacturing group III nitride composite substrate 1 in Reference Embodiment II-4-1.
  • the method for manufacturing group III nitride composite substrate 1 in the present reference embodiment preferably includes the step of adjusting the RMS of group III-nitride-film 13 -side main surface 13 m by polishing group III-nitride-film 13 -side main surface 13 m of group III nitride composite substrate 1 after the step of forming the group III nitride composite substrate.
  • group III-nitride-film 13 -side main surface 13 m of group III nitride composite substrate 1 can have a mean value m III-N of the RMS of 0.15 nm or more and 3 nm or less, and group III-nitride-film 13 -side main surface 13 m can have a ratio s III-N /m III-N of standard deviation s III-N of the RMS to mean value m III-N of the RMS of 0.008 or more and 0.5 or less.
  • control of mean value m III-N of the RMS of group III-nitride-film 13 -side main surface 13 m and ratio s III-N /m III-N of standard deviation of the RMS to mean value m III-N of the RMS of group III-nitride-film 13 -side main surface 13 m is similar to that of the method for manufacturing group III nitride composite substrate 1 in Reference Embodiment II-4-1.
  • a method for manufacturing a group III nitride semiconductor device which is a still further reference embodiment of Reference Invention II, includes the steps of: preparing group III nitride composite substrate 1 of Reference Embodiment II-1; and growing at least one group III nitride layer 20 on group III-nitride-film 13 -side main surface 13 m of group III nitride composite substrate 1 ( FIG. 15 (A)).
  • the method for manufacturing a group III nitride semiconductor device in the present reference embodiment can be used to manufacture group III nitride semiconductor devices having excellent characteristics with a high yield, since the group III nitride layer is grown on group III-nitride-film 13 -side main surface 13 m having a small temperature variation on main surface 13 m when the group III nitride layer is grown.
  • the method for manufacturing a group III nitride semiconductor device in the present reference embodiment may further include the step of removing support substrate 11 from group III nitride composite substrate 1 ( FIG. 15 (C)) after the step of growing group III nitride layer 20 ( FIG. 15 (A)). This step enables group III nitride semiconductor devices of a variety of forms to be manufactured.
  • the method for manufacturing a group III nitride semiconductor device in the present reference embodiment may further include the step of bonding device support substrate 40 onto group III nitride layer 20 ( FIG. 15 (B)) after the step of growing the group III nitride layer ( FIG. 15 (A)) and before the step of removing the support substrate ( FIG. 15 (C)).
  • This step enables group III nitride semiconductor devices having a high mechanical strength and excellent characteristics and supported by device support substrate 40 to be manufactured with a high yield.
  • the method for manufacturing a group III nitride semiconductor device in the present reference embodiment may specifically be performed through the following steps.
  • suitable methods for growing group III nitride layer 20 are gas phase methods such as MOVPE, MBE, HVPE, and sublimation method, as well as liquid phase methods such as flux method, in order to epitaxially grow group III nitride layer 20 having a high crystal quality, and a particularly suitable method is MOVPE.
  • group III nitride layer 20 varies depending on the type of group III nitride semiconductor device 4 .
  • group III nitride layer 20 may be configured by successively growing, on group III nitride film 13 , for example, an n-GaN layer 21 , an n-In 0.05 Ga 0.95 N layer 22 , an active layer 23 having a multiple quantum well structure, a p-Al 0.09 Ga 0.91 N layer 24 , and a p-GaN layer 25 .
  • group III nitride layer 20 is grown on group III-nitride-film 13 -side main surface 13 m of group III nitride composite substrate 1 , and accordingly laminated group III nitride composite substrate 2 is obtained.
  • the step of bonding device support substrate 40 onto group III nitride layer 20 is performed by forming a first electrode 30 and a pad electrode 33 on group III nitride layer 20 of laminated group III nitride composite substrate 2 , forming a pad electrode 43 and a joint metal film 44 on device support substrate 40 , and bonding joint metal film 44 to pad electrode 33 .
  • laminated substrate 3 is obtained.
  • Si substrate, CuW substrate, Mo substrate, or the like is used as device support substrate 40 .
  • the step of removing support substrate 11 from group III nitride composite substrate 1 is performed by removing support substrate 11 of group III nitride composite substrate 1 from laminated substrate 3 .
  • group III nitride composite substrate 1 includes joint film 12 interposed between support substrate 11 and group III nitride film 13
  • joint film 12 can also be removed.
  • the method for removing support substrate 11 and joint film 12 is not particularly limited, and suitable methods to be used are grinding, etching, and the like.
  • support substrate 11 formed of a material which is low in hardness, strength, and wear resistance, and is likely to be ground off, can be removed by at least one of grinding and polishing, in order to reduce the manufacturing cost.
  • a support substrate formed of a polycrystalline material such as ceramic material is more preferred as compared with a support substrate formed of a monocrystalline material such as sapphire, SiC, group III nitride (GaN for example), or the like, since the support substrate 11 of the polycrystalline material is easier to remove.
  • a rear surface of the free-standing group III nitride substrate (the rear surface refers to a main surface opposite to a main surface on which a group III nitride layer is formed, and this definition is applied as well hereinafter) is subjected to grinding or the like for the purpose of reducing the thickness of the device.
  • a second electrode 50 is formed and, on device support substrate 40 , a device support substrate electrode 45 is formed.
  • Reference Invention III relates to a group III nitride composite substrate that can be manufactured at a low cost, has a large diameter, and has a group III nitride film with an appropriate thickness and a high crystal quality, a method for manufacturing the group III nitride composite substrate, a laminated group III nitride composite substrate, as well as a group III nitride semiconductor device and a method for manufacturing the same.
  • Group III nitrides such as GaN have superior semiconductor properties and are therefore used as materials suitable for semiconductor devices.
  • Japanese Patent Laying-Open No. 2009-126722 discloses a free-standing group III nitride substrate to be used as a substrate for a semiconductor device.
  • the free-standing group III nitride substrate has a diameter of 25 mm or more and 160 mm or less and a thickness of 100 ⁇ m or more and 1000 ⁇ m or less. It discloses, as a specific example thereof, a free-standing GaN substrate having a diameter of 10 mm and a thickness of 400 ⁇ m.
  • Japanese Patent Laying-Open No. 2008-010766 discloses a GaN-thin-film-bonded substrate to be used as a substrate for manufacturing a semiconductor device.
  • the GaN-thin-film-bonded substrate includes a heterogeneous substrate whose chemical composition is different from that of GaN, and a GaN thin film having a thickness of 0.1 ⁇ m or more and 100 ⁇ m or less and bonded to the heterogeneous substrate. It discloses, as a specific example thereof, a GaN-thin-film-bonded substrate having a diameter of 50.8 mm and including a sapphire substrate and a GaN thin film having a thickness of 0.1 ⁇ m or 100 ⁇ m and bonded to the sapphire substrate.
  • the free-standing group III nitride substrate disclosed in Japanese Patent Laying-Open No. 2009-126722 is very expensive. This is chiefly for the reason that the group III nitride does not form a liquid phase and therefore a liquid-phase growth method which is a low-cost manufacturing method cannot be employed, namely it is inevitable to employ a vapor-phase growth method of a low yield.
  • the group III nitride is a low-fracture-toughness material which is highly susceptible to fracture. Due to this, it is difficult to increase the diameter of the substrate. Further, if the thickness of the substrate is reduced to a thickness on the order of 250 ⁇ m for the purpose of reducing the manufacturing cost, the substrate is susceptible to warp. Accordingly, in the step of growing an epitaxial layer on the substrate, the crystal quality may be deteriorated or substrate peeling may occur, which reduces the yield of manufacture of semiconductor devices. It has therefore been difficult to produce a high-value-added semiconductor device.
  • the thickness of a group III nitride film which is to serve as a base is preferably 10 ⁇ m or more.
  • the thickness of the group III nitride film is limited to approximately 1 ⁇ m, for the following reasons.
  • the bonded substrate as disclosed in Japanese Patent Laying-Open No. 2008-010766 the heterogeneous substrate and the GaN bulk crystal are bonded together, and thereafter the ion implantation method is used to divide the GaN bulk crystal to thereby form a GaN thin film. On this method, however, a certain limitation in terms of the depth of ion implantation is imposed.
  • the substrate is susceptible to warp or cracks. In this case as well, it is difficult to grow an epitaxial layer of a high quality on the group III nitride film.
  • An object of the present invention is to provide a group III nitride composite substrate that can be manufactured at a low cost, and has a large diameter and has a group III nitride film with an appropriate thickness and a high crystal quality, a method for manufacturing the group III nitride composite substrate, a laminated group III nitride composite substrate, as well as a group III nitride semiconductor device and a method for manufacturing the same.
  • Reference Invention III provides a group III nitride composite substrate with a diameter of 75 mm or more including a support substrate and a group III nitride film having a thickness of 10 ⁇ m or more and 250 ⁇ m or less that are bonded to each other, the group III nitride composite substrate includes a joint film interposed between the support substrate and the group III nitride film and joining the support substrate and the group III nitride film to each other, and the joint film has a thickness variation of 2% or more and 40% or less.
  • Reference Invention III provides a group III nitride composite substrate with a diameter of 75 mm or more including a support substrate and a group III nitride film having a thickness of 10 ⁇ m or more and 250 ⁇ m or less that are bonded to each other, the group III nitride composite substrate includes a joint film interposed between the support substrate and the group III nitride film and joining the support substrate and the group III nitride film to each other, a shear joint strength between the support substrate and the group III nitride film is 4 MPa or more and 40 MPa or less, and a ratio of a joint area between the support substrate and the group III nitride film is 60% or more and 99% or less.
  • a ratio ⁇ III-N / ⁇ S of a thermal expansion coefficient ⁇ III-N of the group III nitride film to a thermal expansion coefficient ⁇ S of the support substrate may be 0.75 or more and 1.25 or less, and a ratio t III-N /t S of a thickness t III-N of the group III nitride film to a thickness t S of the support substrate may be 0.02 or more and 1 or less.
  • the support substrate may have a thermal conductivity ⁇ S of 3 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or more and 280 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or less.
  • the support substrate may have a Young's modulus E S of 150 GPa or more and 500 GPa or less.
  • the diameter of the group III nitride composite substrate may be 125 mm or more and 300 mm or less.
  • Reference Invention III provides a laminated group III nitride composite substrate including the group III nitride composite substrate according to the above aspect, and at least one group III nitride layer disposed on the group III-nitride-film-side main surface of the group III nitride composite substrate.
  • Reference Invention III provides a group III nitride semiconductor device including the group III nitride film in the group III nitride composite substrate according to the above aspect, and at least one group III nitride layer disposed on the group III nitride film.
  • Reference Invention III provides a method for manufacturing a group III nitride composite substrate according to the above aspect, including the steps of forming a joined substrate with a diameter of 75 mm or more by bonding a support substrate and a group III nitride film donor substrate to each other; and forming the group III nitride composite substrate by cutting the group III nitride film donor substrate in the joined substrate along a plane located inwardly at a predetermined distance from a bonded main surface of the group III nitride film donor substrate.
  • Reference Invention III provides a method for manufacturing a group III nitride composite substrate according to the above aspect, including the steps of forming a joined substrate with a diameter of 75 mm or more by bonding a support substrate and a group III nitride film donor substrate to each other; and forming the group III nitride composite substrate by performing at least one of grinding, polishing, and etching on a main surface of the group III nitride film donor substrate in the joined substrate, the main surface being opposite to a bonded main surface of the group III nitride film donor substrate.
  • Reference Invention III provides a method for manufacturing a group III nitride semiconductor device, including the steps of preparing a group III nitride composite substrate; and growing at least one group III nitride layer on a group III nitride film of the group III nitride composite substrate.
  • the method for manufacturing a group III nitride semiconductor device according to this aspect of Reference Invention III may further include the steps of: bonding a device support substrate onto the group III nitride layer; and removing the support substrate from the group III nitride composite substrate.
  • Reference Invention III can provide a group III nitride composite substrate that can be manufactured at a low cost, and has a large diameter and has a group III nitride film with an appropriate thickness and a high crystal quality, a method for manufacturing the group III nitride composite substrate, a laminated group III nitride composite substrate, as well as a group III nitride semiconductor device and a method for manufacturing the same.
  • a group III nitride composite substrate 1 which is a reference embodiment of Reference Invention III is a substrate with a diameter of 75 mm or more including a support substrate 11 and a group III nitride film 13 having a thickness of 10 ⁇ m or more and 250 ⁇ m or less that are bonded to each other.
  • Group III nitride composite substrate 1 includes a joint film 12 interposed between support substrate 11 and group III nitride film 13 and joining support substrate 11 and group III nitride film 13 to each other.
  • the group III nitride composite substrate is characterized in that joint film 12 has a thickness variation of 2% or more and 40% or less.
  • Group III nitride composite substrate 1 in the present reference embodiment is also characterized in that a shear joint strength between support substrate 11 and group III nitride film 13 joined to each other by joint film 12 is 4 MPa or more and 40 MPa or less, and a ratio of a joint area between support substrate 11 and group III nitride film 13 is 60% or more and 99% or less.
  • the present reference embodiment provides a composite substrate in which group III nitride film 13 is joined to support substrate 11 . This feature can be employed to reduce the thickness of the expensive group III nitride film and reduce the cost of the semiconductor device.
  • the present reference embodiment provides the substrate having a large diameter of 75 mm or more and group III nitride film 13 having a thickness of 10 ⁇ m or more and 250 ⁇ m or less. Accordingly, the group III nitride composite substrate of the present reference embodiment can be used to obtain significantly excellent semiconductor device characteristics.
  • the thickness variation of joint film 12 is 2% or more and 40% or less, or that the shear joint strength between support substrate 11 and group III nitride film 13 is 4 MPa or more and 40 MPa or less, and the ratio of the joint area between support substrate 11 and group III nitride film 13 is 60% or more and 99% or less.
  • the group III nitride composite substrate includes joint film 12 having its thickness variation which is controlled so that the thickness variation falls within a specific range. Therefore, even in the case where group III nitride film 13 of a substrate having a large diameter of 75 mm or more is cut with a wire saw or the like to separate a part thereof and thereby reduce the thickness thereof to 10 ⁇ m or more and 250 ⁇ m or less, the heat from a susceptor on which the substrate is mounted is transmitted uniformly in the film in a semiconductor device process of forming an epitaxial layer on group III nitride film 13 . Thus, the epitaxial layer having a good thickness variation and a high crystal quality can be obtained, and accordingly, the yield of manufacture of semiconductor devices can also be increased.
  • the joint strength and the ratio of the joint area between support substrate 11 and group III nitride film 13 are controlled so that they fall within specific ranges respectively. Therefore, the stress applied to the joint film is alleviated and occurrence of warp can be suppressed. Accordingly, the yield of manufacture of semiconductor devices can be increased.
  • Group III nitride composite substrate 1 in the present reference embodiment can have at least one of: the above-described feature of the thickness variation of joint film 12 ; and the above-described feature of the joint strength and the ratio of the joint area between support substrate 11 and group III nitride film 13 , to thereby increase the yield of manufacture of semiconductor devices and improve the characteristics of the semiconductor devices. It is particularly preferable that group III nitride composite substrate 1 has both the above-described features, since respective effects of the features are synergistically produced and thus the effects of the present invention can further be enhanced.
  • the diameter of group III nitride composite substrate 1 is 75 mm or more, and is preferably 100 mm or more, more preferably 125 mm or more, and still more preferably 150 mm or more. Meanwhile, in order to reduce the warp of the composite substrate and increase the yield of semiconductor devices, the diameter of group III nitride composite substrate 1 is preferably 300 mm or less, and more preferably 200 mm or less.
  • Joint film 12 in the present reference embodiment has a function of absorbing and alleviating unevenness of a joint surface of support substrate 11 and a joint surface of group III nitride film 13 to thereby increase the joint strength between support substrate 11 and group III nitride film 13 .
  • Joint film 12 is not particularly limited as long as joint film 12 can join support substrate 11 and group III nitride film 13 to each other.
  • Joint film 12 is preferably SiO 2 film, Si 3 N 4 film, TiO 2 film, Ga 2 O 3 film, or the like, because these films have a high joining ability for joining support substrate 11 and group III nitride film 13 to each other.
  • the average thickness of joint film 12 is not particularly limited, the average thickness thereof may for example be approximately 100 nm to 4 ⁇ m.
  • the thickness variation of joint film 12 is 2% or more and 40% or less.
  • Thiickness variation is herein an indicator of the uniformity of the thickness of joint film 12 and calculated in accordance with the following formula, from “maximum value t max of the thickness” and “minimum value of the thickness” among the thicknesses measured in the entire main surface of joint film 12 .
  • main surface 11 m of support substrate 11 may be used as a reference surface for the thickness of the joint film.
  • the measurement points where the thickness is measured are preferably at least 13 points, and the measurement points adjacent to each other are preferably located at substantially regular intervals.
  • the thickness of the joint film can be measured with a conventionally known optical-interference film thickness meter, step meter, or the like.
  • the thickness can also be measured through observation of a cross section perpendicular to the main surface of joint film 12 with a scanning electron microscope (SEM) or the like.
  • the thickness variation is less than 2%, heat conduction from the susceptor on which the substrate is mounted is nonuniform when an epitaxial layer is grown. As a result, the substrate is warped in a concave form and has a large difference between the temperature of a central portion and the temperature of a peripheral portion. In this case, the epitaxial layer with a high quality cannot be grown, the yield of manufacture of semiconductor devices is low, and the characteristics of the semiconductor devices are deteriorated. If the thickness variation is more than 40%, there are a greater number of regions where the joint film is thinner and regions where the joint film is absent (namely non-joined regions). In this case as well, an epitaxial layer with a high quality cannot be grown and the yield of manufacture of semiconductor devices is low.
  • the thickness variation of the joint film in the present reference embodiment is 2% or more and 40% or less.
  • the thickness variation falling within this range produces superior effects that the temperature is distributed uniformly over the whole composite substrate during epitaxial growth and a high-quality epitaxial layer having a high crystal quality can be grown.
  • the thickness variation is more preferably 5% or more and 25% or less, and still more preferably 7% or more and 16% or less.
  • the thickness variation falling within these ranges enables the uniformity of the thickness of the joint film to be further improved and the crystal quality of the epitaxial layer formed on group III nitride film 13 to be further enhanced.
  • the thickness variation of the joint film can be controlled so that it falls within a desired range, by appropriately adjusting the conditions of chemical mechanical polishing (hereinafter also referred to as “CMP”) performed on the surface of the joint film, for example.
  • CMP chemical mechanical polishing
  • Examples of the conditions may be the material for the abrasive, the linear velocity of polishing, the material for the polishing pad, and the like.
  • the shear joint strength between support substrate 11 and group III nitride film 13 joined together by joint film 12 is 4 MPa or more and 40 MPa or less.
  • the shear joint strength is more preferably 10 MPa or more and 30 MPa or less. This is suitable since such a shear strength tends to further increase the effect of alleviating the warp of the substrate. If the shear joint strength is less than 4 MPa, the joint strength is not sufficient.
  • substrate peeling occurs during epitaxial growth, because of deformation of the substrate due to heat conduction from the susceptor on which the substrate is mounted, resulting in a lower yield of manufacture of semiconductor devices.
  • shear joint strength is more than 40 MPa, a greater stress is applied to joint film 12 and the warp of the substrate tends to be increased, resulting in a lower yield of manufacture of semiconductor devices.
  • the shear joint strength can be measured with a die shear tester, tensile tester, or the like, by a method in accordance with JIS K 6850 “Determination of tensile lap-shear strength of rigid-to-rigid bonded assemblies.” Specifically, a rectangular composite substrate (6 mm in length ⁇ 8 mm in width) is prepared as a measurement sample, and the composite substrate is placed flat and secured on a sample stage of a tester so that the support substrate faces downward.
  • a test jig of 9 mm in width is used to apply a load in the direction parallel to the joint surface between the support substrate and the group III nitride film (namely the shear direction), and a maximum shear load at the time when the joint surface is broken is measured. Then, the maximum shear load is divided by the area of the joint surface (4.8 ⁇ 10 ⁇ 5 m 2 ), to thereby calculate the shear joint strength.
  • a method for achieving a shear joint strength of 4 MPa or more and 40 MPa or less between support substrate 11 and group III nitride film 13 a method according to which an annealing treatment is performed before and after support substrate 11 and group III nitride film 13 are joined to each other, for example, can appropriately be used. Namely, a suitable method is as follows. After a joint film is formed on each of one main surface of support substrate 11 and one main surface of group III nitride film 13 , each of support substrate 11 and group III nitride film 13 is subjected to an annealing treatment. Annealed support substrate 11 and annealed group III nitride film 13 are joined to each other with the joint film interposed therebetween, and thereafter subjected again to the annealing treatment.
  • the annealing treatment is performed preferably in a nitrogen atmosphere at 400° C. or more for one hour or more, more preferably in a nitrogen atmosphere at 600° C. or more for one hour or more, and particularly preferably in a nitrogen atmosphere at 800° C. or more for one hour or more.
  • the temperature condition for the annealing treatment is preferably 1200° C. or less, and the time for the treatment is preferably 48 hours or less.
  • the shear joint strength can also be controlled by means of the surface state (namely the surface roughness) before the joint film is joined.
  • Group III nitride composite substrate 1 in the present reference embodiment needs to have a shear joint strength between support substrate 11 and group III nitride film 13 of 4 MPa or more and 40 MPa or less, and a ratio of the joint area between support substrate 11 and group III nitride film 13 of 60% or more and 99% or less as described above.
  • the relation between support substrate 11 and group III nitride film 13 is thus defined in terms of these two respects, and therefore, group III nitride composite substrate 1 in the present reference embodiment enables a warp of the substrate during epitaxial growth to be remarkably reduced and enables a high-flatness and high-quality epitaxial layer to be grown.
  • the composite substrate has superior effects that the frequency of occurrence of substrate peeling is extremely low in the process of manufacturing a semiconductor device and the yield of manufacture of semiconductor devices is high.
  • the ratio of the joint area is less than 60%
  • the frequency of occurrence of substrate peeling is high in the process of epitaxial growth and the process of manufacturing a semiconductor device, resulting in a lower yield of manufacture of semiconductor devices.
  • the ratio of the joint area is higher than 99%, a greater stress is applied to joint film 12 and a warp is likely to occur to the substrate. Therefore, in this case as well, the yield of manufacture of semiconductor devices is lower.
  • ratio of joint area is a value determined by calculating the sum of areas detected as joint defects (void or peeling) through observation of joint film 12 which is a joint surface between support substrate 11 and group III nitride film 13 with an ultrasonic microscope, dividing the sum by the area of main surface 11 m of support substrate 11 , and multiplying the quotient by 100.
  • the ratio of the joint area is more preferably 70% or more and 90% or less, and still more preferably 80% or more and 86% or less. In the case where the ratio of the joint area falls in these ranges, the stress applied to joint film 12 is significantly alleviated, and the yield of manufacture of semiconductor devices can further be increased.
  • a method for achieving a ratio of the joint area of 60% or more and 99% or less a method according to which the surface of joint film 12 is cleaned, for example, can be used. Specifically, a method can appropriately be used according to which dirt on the surface of joint film 12 is removed by CMP and thereafter the surface is further subjected to ultrasonic cleaning with water. As a more preferred method, a method can be used according to which dirt on the surface of joint film 12 is removed by CMP and thereafter dirt is further removed by non-abrasive polishing cleaning with a chemical solution such as an aqueous solution of potassium hydroxide (KOH) or water. Both the ultrasonic cleaning and the non-abrasive polishing cleaning, for example, may also be used.
  • KOH potassium hydroxide
  • the ratio of the joint area can more precisely be controlled by the thickness variation of joint film 12 defined as 2% or more and 40% or less. Namely, it is particularly preferable that the thickness variation of joint film 12 is 2% or more and 40% or less and the ratio of the joint area is 60% or more and 99% or less.
  • Support substrate 11 is not particularly limited as long as support substrate 11 can support group III nitride film 13 .
  • the support substrate is preferably a hetero-composition substrate whose chemical composition is different from that of the group III nitride.
  • Support substrate 11 may be either transparent or opaque, and one of the transparent one and the opaque one can appropriately be selected depending on a semiconductor device to be used.
  • the material forming support substrate 11 a conventionally known ceramic material, semiconductor material, metal material, polycrystalline material, monocrystalline material, or the like can be used.
  • the material for support substrate 11 may be a sintered body material of aluminum nitride (AlN), spinel (MgAl 2 O 4 ), mullite (3Al 2 O 3 .2SiO 2 -2Al 2 O 3 .SiO 2 ), alumina (Al 2 O 3 ), graphite, or the like, a monocrystalline material such as AlN, sapphire, or the like, a metal material such as molybdenum (Mo), tungsten (W), or the like, or an alloy material such as copper-tungsten (Cu—W), or the like.
  • AlN aluminum nitride
  • MgAl 2 O 4 spinel
  • mullite 3Al 2 O 3 .2SiO 2 -2Al 2 O 3 .SiO 2
  • alumina Al 2 O 3
  • graphite
  • Support substrate 11 may be exposed to a high-temperature corrosive gas such as ammonia gas during epitaxial growth for example, and is therefore preferably a substrate resistant to corrosion.
  • the substrate may be covered with any of various surface protection coatings for improving the corrosion resistance of its surface.
  • Support substrate 11 has a thermal conductivity ⁇ S of preferably 3 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or more and 280 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or less, more preferably 5 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or more and 210 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or less, and still more preferably 10 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or more and 120 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or less.
  • Thermal conductivity ⁇ S of support substrate 11 can be measured by a laser flash method.
  • Group III nitride composite substrate 1 having support substrate 11 with a thermal conductivity ⁇ S of preferably 3 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or more, more preferably 5 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or more, and still more preferably 10 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or more, can efficiently transmit heat from the main surface of the susceptor to main surface 13 m of group III nitride film 13 of group III nitride composite substrate 1 , when a group III nitride layer is grown.
  • Group III nitride composite substrate 1 having support substrate 11 with a thermal conductivity ⁇ S of preferably 280 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or less, more preferably 210 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or less, and still more preferably 120 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or less, can uniformly transmit heat from the main surface of the susceptor to the whole main surface of group III nitride film 13 of group III nitride composite substrate 1 , when a group III nitride layer is grown.
  • Support substrate 11 having a thermal conductivity ⁇ S of 280 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or less can more uniformly transmit the heat from the main surface of the susceptor to the whole main surface of group III nitride film 13 of group III nitride composite substrate 1 when a group III nitride layer is grown, as compared with the case where an SiC substrate having a thermal conductivity ⁇ S of about 300 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 is used as the support substrate. It should be noted that the thermal conductivity of support substrate 11 may be different from the thermal conductivity of group III nitride film 13 .
  • Support substrate 11 is preferably a substrate which is not prone to crack.
  • the thermal expansion coefficient of support substrate 11 is preferably close to the thermal expansion coefficient of group III nitride film 13 .
  • Support substrate 11 having such properties is appropriate, since it makes group III nitride composite substrate 1 less prone to crack even when group III nitride composite substrate 1 is heated in the process of epitaxial growth, the process of manufacturing a semiconductor device, or the like.
  • a ratio ⁇ III-N / ⁇ S of a thermal expansion coefficient ⁇ III-N of group III nitride film 13 to a thermal expansion coefficient ⁇ S of support substrate 11 is preferably 0.75 or more and 1.25 or less, more preferably 0.8 or more and 1.2 or less, still more preferably 0.9 or more and 1.1 or less, and particularly preferably 0.95 or more and 1.05 or less.
  • a ratio t III-N /t S of a thickness t III-N of group III nitride film 13 to a thickness t S of support substrate 11 is preferably 0.02 or more and 1 or less.
  • the ratio ⁇ III-N / ⁇ S of the thermal expansion coefficient is 0.75 or more and 1.25 or less and the ratio t III-N /t S of the thickness is 0.02 or more and 1 or less makes it possible to significantly reduce occurrences of defective pieces due to warp or crack of group III nitride film 13 , on various occasions such as a process of manufacturing the composite substrate, a process of epitaxial growth, and a process of manufacturing a semiconductor device.
  • the ratio t III-N /t S of the thickness is more preferably 0.07 or more and 0.5 or less.
  • E S is preferably 150 GPa or more and 500 GPa or less, in order to suppress occurrence of warp when group III nitride composite substrate 1 is heated. If E S is less than 150 GPa, warp tends to be likely to occur during heating. If E S is more than 500 GPa, breakage or crack tends to be likely to occur during heating. These E S are therefore not preferred. E S is more preferably in a range of 200 GPa or more and 350 GPa or less. While the Young's modulus of support substrate 11 may be different from that of group III nitride film 13 , preferably Young's modulus of support substrate 11 is substantially identical to that of group III nitride film 13 .
  • support substrate 11 may be formed of a material having its thermal expansion coefficient and its Young's modulus that are close to those of group III nitride film 13 , such as a substrate formed of mullite (3Al 2 O 3 .2SiO 2 -2Al 2 O 3 .SiO 2 ), a substrate formed of mullite-YSZ (Yttria Stabilized Zirconia), a substrate formed of spinel (MgAl 2 O 4 ), a substrate formed of a sintered body of an Al 2 O 3 —SiO 2 -based composite oxide, and substrates formed respectively of sintered bodies of them to which oxide, nitride, carbonate or the like is added, a molybdenum (Mo) substrate, a tungsten (W) substrate, and the like.
  • a substrate formed of mullite 3Al 2 O 3 .2SiO 2 -2Al 2 O 3 .SiO 2
  • mullite-YSZ Yttria St
  • preferred elements to be contained in the oxide, the nitride, and the carbonate are Ca, Mg, Sr, Ba, Al, Sc, Y, Ce, Pr, Si, Ti, Zr, V, Nb, Ta, Cr, Mn, Fe, Co, Ni, Cu, Zn, and the like.
  • Group III nitride film 13 is a film formed of a group III nitride, specifically an In x Al y Ga 1-x-y N film (0 ⁇ x, 0 ⁇ y, x+y ⁇ 1) such as GaN film, AlN film, or the like.
  • the thickness of group III nitride film 13 is 10 ⁇ m or more and 250 ⁇ m or less. In the case where the thickness is less than 10 ⁇ m, adequate semiconductor device characteristics tend to fail to be obtained. If the thickness is more than 250 ⁇ m, the amount of use of the expensive group III nitride is larger, which makes it difficult to produce a high-value-added semiconductor device.
  • the thickness of group III nitride film 13 is preferably 30 ⁇ m or more, more preferably 80 ⁇ m or more, and particularly preferably 100 ⁇ m or more. In order to produce a high-value-added semiconductor device, the thickness is preferably 200 ⁇ m or less, more preferably 180 ⁇ m or less, and particularly preferably 130 ⁇ m or less.
  • the crystal structure of group III nitride film 13 is preferably the wurtzite structure, since it enables semiconductor devices having excellent characteristics to be produced.
  • the predetermined plane orientation to which the main surface of group III nitride film 13 is closest is not limited as long as it is suitable for a desired semiconductor device, and may be any of ⁇ 0001 ⁇ , ⁇ 10-10 ⁇ , ⁇ 11-20 ⁇ , ⁇ 21-30 ⁇ , ⁇ 20-21 ⁇ , ⁇ 10-11 ⁇ , ⁇ 11-22 ⁇ , and ⁇ 22-43 ⁇ , as well as plane orientations that are displaced by an angle of 15° or less (off by 15° or less) from these plane orientations, respectively.
  • main surface 13 m of group III nitride film 13 may be any of polar plane, nonpolar plane, and semipolar plane.
  • Main surface 13 m of group III nitride film 13 is preferably the ⁇ 0001 ⁇ plane and the opposite plane thereof, since such planes make it easy to increase the diameter, or any of ⁇ 10-10 ⁇ plane, ⁇ 20-21 ⁇ plane, and the opposite planes thereof, since such planes suppress blue shift of a light-emitting device to be produced.
  • Impurity metal atoms in main surface 13 m of group III nitride film 13 are preferably 3 ⁇ 10 12 atoms/cm 2 or less, more preferably 1 ⁇ 10 12 atoms/cm 2 or less, and still more preferably 1 ⁇ 10 11 atoms/cm 2 or less, in order to enhance the crystal quality of a group III nitride layer grown on group III nitride film 13 and enhance the characteristics of a semiconductor device to be formed.
  • Group III nitride composite substrate 1 which includes support substrate 11 such as a substrate of mullite (3Al 2 O 3 .2SiO 2 -2Al 2 O 3 .SiO 2 ), mullite-YSZ (Yttria Stabilized Zirconia), spinel (MgAl 2 O 4 ), a sintered body of an Al 2 O 3 —SiO 2 -based composite oxide, or the like is preferably subjected to cleaning that suppresses elution of metal atoms from support substrate 11 , such as scrub cleaning with a surfactant and pure water, two-fluid cleaning, megasonic cleaning, sheet-fed cleaning of a single side with low-concentration acid or alkali, for example, to thereby reduce the concentration of impurity metal atoms in main surface 13 m of group III nitride film 13 .
  • support substrate 11 such as a substrate of mullite (3Al 2 O 3 .2SiO 2 -2Al 2 O 3 .
  • the impurities are preferably Cl atoms of 2 ⁇ 10 14 atoms/cm 2 or less, Si atoms of 9 ⁇ 10 13 atoms/cm 2 or less.
  • the dislocation density of group III nitride film 13 is not particularly limited. In order to reduce leak current of the semiconductor device, the dislocation density is preferably 1 ⁇ 10 8 cm ⁇ 2 or less.
  • the carrier concentration of group III nitride film 13 is not particularly limited. In order to reduce the resistance of the semiconductor device, the carrier concentration is preferably 1 ⁇ 10 17 cm ⁇ 3 or more.
  • the above-described group III nitride composite substrate can be manufactured through the following manufacturing method. Namely, the group III nitride composite substrate obtained through the following manufacturing method can be manufactured at a low cost, has a large diameter, and has a group III nitride film with an appropriate thickness and a high crystal quality.
  • a method for manufacturing group III nitride composite substrate 1 which is another reference embodiment of Reference Invention III, is not particularly limited as long as it is a method according to which group III nitride film 13 is disposed on support-substrate 11 -side main surface 11 n , and may be any of the following first and second methods.
  • the first method is a method as shown in FIG. 12 according to which a group III nitride film donor substrate 13 D is bonded to main surface 11 m of support substrate 11 , and thereafter group III nitride film donor substrate 13 D is cut along a plane located at a predetermined depth from the bonded surface, to thereby form group III nitride film 13 on main surface 11 m of support substrate 11 .
  • the second method is a method as shown in FIG. 14 according to which a group III nitride film donor substrate 13 D is bonded to main surface 11 m of support substrate 11 , and thereafter at least one of grinding, polishing, and etching is performed on a main surface of group III nitride film donor substrate 13 D, which is a main surface opposite to the bonded surface thereof, to adjust the thickness by reducing the thickness, and thereby form group III nitride film 13 on main surface 11 m of support substrate 11 .
  • the method for bonding group III nitride film donor substrate 13 D to support substrate 11 may be a method according to which group III nitride film donor substrate 13 D is bonded to main surface 11 m of support substrate 11 with a joint film 12 interposed therebetween (see FIGS. 12 and 14 ), or the like.
  • FIGS. 12 and 14 illustrate a method according to which a joint film 12 a is formed on support substrate 11 , a joint film 12 b is formed on group III nitride film 13 , and these joint films are bonded to each other.
  • joint film 12 may be formed on only support substrate 11 and this joint film may be bonded to group III nitride film 13 .
  • the method for manufacturing a composite substrate by the first method illustrated in FIG. 12 is not particularly limited.
  • the method preferably includes the steps of: forming a joined substrate 1 L by bonding support substrate 11 and group III nitride film donor substrate 13 D to each other ( FIG. 12 (A) to (C)); and cutting group III nitride film donor substrate 13 D along a plane located inwardly at a predetermined depth from main surface 13 n , which is the bonded surface, of group III nitride film donor substrate 13 D of joined substrate 1 L ( FIG. 12 (D)).
  • Support substrate 11 is not particularly limited, and can be obtained for example by mixing, at a predetermined molar ratio, MO x (x is an arbitrary positive real number) which is an oxide containing a metal element M, Al 2 O 3 which is an oxide containing Al, and SiO 2 which is an oxide containing Si, sintering the resultant mixture, cutting a substrate of a predetermined size from the resultant sintered body, and polishing a main surface of this substrate.
  • MO x x is an arbitrary positive real number
  • Al 2 O 3 which is an oxide containing Al
  • SiO 2 which is an oxide containing Si
  • Group III nitride film donor substrate 13 D is a donor substrate which provides group III nitride film 13 by being separated in a later step.
  • MOCVD Metal Organic Chemical Vapor Deposition
  • sputtering MBE (Molecular Beam Epitaxy)
  • PLD Pulsed Laser Deposition
  • HVPE HydroVPE
  • sublimation method flux method, high nitrogen pressure solution method, or the like can appropriately be used.
  • the step of forming joined substrate 1 L by bonding support substrate 11 and group III nitride film donor substrate 13 D to each other includes: the sub step of forming joint film 12 a on main surface 11 m of support substrate 11 ( FIG. 12 (A)); the sub step of forming joint film 12 b on main surface 13 n of group III nitride film donor substrate 13 D ( FIG. 12 (B)); and the sub step of bonding joint film 12 a formed on main surface 11 m of support substrate 11 and joint film 12 b formed on main surface 13 n of group III nitride film donor substrate 13 D to each other ( FIG. 12 (C)).
  • the method for forming joint films 12 a , 12 b is not particularly limited. In order to reduce the cost of forming the films, sputtering, vapor deposition, CVD (Chemical Vapor Deposition), or the like is appropriately performed.
  • the method for bonding joint film 12 a and joint film 12 b to each other is not particularly limited, and suitable methods include: a direct bonding method according to which respective surfaces to be bonded to each other are cleaned, directly bonded together, and thereafter heated to approximately 600° C. to 1200° C.
  • a surface activated bonding method according to which the surfaces to be bonded to each other are cleaned, subjected to an activation treatment by means of plasma or ions, and thereafter joined together under a low-temperature atmosphere of room temperature (25° C.
  • any of the above-referenced bonding methods can increase the temperature to approximately 600° C. to 1200° C. after the joint films are joined together to thereby further increase the joint strength.
  • the surface activated bonding method, the high pressure bonding method, and the high vacuum bonding method exhibit a higher effect of increasing the joint strength through the heating to approximately 600° C. to 1200° C. after the joint films are joined together.
  • the step of cutting along a plane located inwardly at a predetermined depth from main surface 13 n , which is the bonded surface, of group III nitride film donor substrate 13 D of joined substrate 1 L shown in FIG. 12 (D) is performed by cutting group III nitride film donor substrate 13 D along a plane located inwardly at a predetermined depth from main surface 13 n , which is the bonded surface, of group III nitride film donor substrate 13 D of joined substrate 1 L.
  • the method for cutting group III nitride film donor substrate 13 D is not particularly limited, and wire saw, inner circumferential blade, outer circumferential blade, or the like is appropriately used.
  • joined substrate 1 L is cut along a plane located inwardly at a predetermined depth from main surface 13 n which is the bonded surface of group III nitride film donor substrate 13 D, and accordingly group III nitride composite substrate 1 including support substrate 11 , joint film 12 disposed on main surface 11 m of support substrate 11 , and group III nitride film 13 disposed on the main surface of joint film 12 is obtained.
  • the method for manufacturing a composite substrate by the second method as illustrated in FIG. 14 is not particularly limited.
  • the method preferably includes the steps of: forming joined substrate 1 L by bonding support substrate 11 and group III nitride film donor substrate 13 D to each other ( FIG. 14 (A) to (C)); and performing at least one of grinding, polishing, and etching on main surface 13 m located opposite to main surface 13 n which is the bonded surface of group III nitride film donor substrate 13 D of joined substrate 1 L ( FIG. 14 (D)).
  • the step of forming joined substrate 1 L by bonding support substrate 11 and group III nitride film donor substrate 13 D to each other includes: the sub step of forming joint film 12 a on main surface 11 m of support substrate 11 ( FIG. 14 (A)); the sub step of forming joint film 12 b on main surface 13 n of group III nitride film donor substrate 13 D ( FIG. 14 (B)); and the sub step of bonding joint film 12 a formed on main surface 11 m of support substrate 11 and joint film 12 b formed on main surface 13 n of group III nitride film donor substrate 13 D to each other ( FIG. 14 (C)).
  • the method for forming group III nitride film donor substrate 13 D is similar to the method for forming group III nitride film donor substrate 13 D according to the first method as described above.
  • the method for forming joint films 12 a , 12 b is also similar to the method for forming joint films 12 a , 12 b in the method for manufacturing a composite substrate according to the first method.
  • the method for bonding support substrate 11 and group III nitride film donor substrate 13 D to each other is also similar to the method for bonding support substrate 11 and group III nitride film 13 to each other in the method for manufacturing a composite substrate according to the first method as described above.
  • group III nitride composite substrate 1 including support substrate 11 , joint film 12 disposed on main surface 11 m of support substrate 11 , and group III nitride film 13 disposed on the main surface of joint film 12 is obtained.
  • the method for grinding group III nitride film donor substrate 13 D is not particularly limited, and may be grinding with a grinding wheel (surface grinding), shot blast, or the like.
  • the method for polishing group III nitride film donor substrate 13 D is not particularly limited, and may be mechanical polishing, chemical mechanical polishing, or the like.
  • the method for etching group III nitride film donor substrate 13 D is not particularly limited, and may be wet etching with a chemical solution, dry etching such as RIE (Reaction Ion Etching), or the like.
  • group III nitride composite substrate 1 can be manufactured.
  • Group III nitride composite substrate 1 manufactured in the above-described way has excellent effects that a high-quality epitaxial layer can be grown on the composite substrate and the yield of manufacture of semiconductor devices is improved.
  • FIG. 8 a laminated group III nitride composite substrate 2 which is still another embodiment of Reference Invention III will be described.
  • Laminated group III nitride composite substrate 2 includes group III nitride composite substrate 1 of Reference Embodiment III-1, and at least one group III nitride layer 20 disposed on group III-nitride-film 13 -side main surface 13 m of group III nitride composite substrate 1 .
  • group III nitride layer 20 is disposed on group III-nitride-film 13 -side main surface 13 m of group III nitride composite substrate 1 and therefore, group III nitride layer 20 can be grown as a high-quality epitaxial layer.
  • group III nitride layer 20 disposed on group III-nitride-film 13 -side main surface 13 m varies depending on the type of the semiconductor device to be produced.
  • group III nitride layer 20 may be configured to include, for example, an n-GaN layer 21 , an n-In 0.05 Ga 0.95 N layer 22 , an active layer 23 having a multiple quantum well structure, a p-Al 0.09 Ga 0.95 N layer 24 , and a p-GaN layer 25 .
  • the group III nitride layer may be configured to include, for example, a GaN layer 26 and an Al 0.2 Ga 0.8 N layer 27 .
  • the group III nitride layer may be configured to include, for example, an n + -GaN layer 28 (having a carrier concentration for example of 2 ⁇ 10 18 cm ⁇ 3 ) and an n ⁇ -GaN layer 29 (having a carrier concentration for example of 5 ⁇ 10 15 cm ⁇ 3 ).
  • Group III nitride semiconductor device 4 includes group III nitride film 13 in the group III nitride composite substrate of Reference Embodiment III-1, and at least one group III nitride layer 20 disposed on group III nitride film 13 .
  • group III nitride semiconductor device 4 in the present reference embodiment includes: group III nitride composite substrate 1 which includes group III nitride film 13 having a thickness of 10 ⁇ m or more and 250 ⁇ m or less; and group III nitride layer 20 with a remarkably high crystal quality grown and thereby disposed on the composite substrate, and therefore has excellent semiconductor characteristics.
  • group III nitride layer 20 varies depending on the type of group III nitride semiconductor device 4 .
  • group III nitride layer 20 may be configured to include, for example, an n-GaN layer 21 , an n-In 0.05 Ga 0.95 N layer 22 , an active layer 23 having a multiple quantum well structure, a p-Al 0.09 Ga 0.91 N layer 24 , and a p-GaN layer 25 .
  • group III nitride layer 20 may be configured to include, for example, an n-GaN layer 21 , an n-In 0.05 Ga 0.95 N layer 22 , an active layer 23 having a multiple quantum well structure, a p-Al 0.09 Ga 0.91 N layer 24 , and a p-GaN layer 25 .
  • group III nitride layer 20 may be configured to include, for example, a GaN layer 26 and an Al 0.2 Ga 0.8 N layer 27 , and a source electrode 60 , a drain electrode 70 , a gate electrode 80 , and the like can be formed on Al 0.2 Ga 0.8 N layer 27 . As shown in FIG.
  • the group III nitride layer may be configured to include, for example, an n + -GaN layer 28 (having a carrier concentration for example of 2 ⁇ 10 18 cm ⁇ 3 ) and an n ⁇ -GaN layer 29 (having a carrier concentration for example of 5 ⁇ 10 15 cm ⁇ 3 ).
  • group III nitride semiconductor device 4 further includes at least one of support substrate 11 and a device support substrate 40 for supporting group III nitride layer 20 .
  • the shape of device support substrate 40 is not limited to the shape of a flat plate, and may be any as long as it supports group III nitride film 13 and group III nitride layer 20 so that group III nitride semiconductor device 4 can be formed.
  • the group III nitride semiconductor device in the reference embodiment as described above can be manufactured by the following manufacturing method. Namely, by the following manufacturing method, group III nitride semiconductor devices can be manufactured at a low cost and with a high yield, and have remarkably excellent semiconductor characteristics.
  • FIG. 15 a method for manufacturing a group III nitride semiconductor device which is a further reference embodiment of Reference Invention III will be described.
  • the method for manufacturing a group III nitride semiconductor device in the present reference embodiment includes the steps of: preparing group III nitride composite substrate 1 ; and growing at least one group III nitride layer 20 on group III-nitride-film 13 -side main surface 13 m of group III nitride composite substrate 1 .
  • the step of preparing group III nitride composite substrate 1 is similar to that of the method for manufacturing a group III nitride composite substrate described above in connection with Reference Embodiment III-2. Therefore, the same description will not be repeated. In the following, the steps after the step of preparing group III nitride composite substrate 1 will be described.
  • the method for manufacturing a group III nitride semiconductor device in the present reference embodiment includes, as shown in FIG. 15 , the step of growing at least one group III nitride layer 20 on group III-nitride-film 13 -side main surface 13 m of group III nitride composite substrate 1 ( FIG. 15 (A)).
  • the method for manufacturing a group III nitride semiconductor device in the present reference embodiment can be used to manufacture group III nitride semiconductor devices having excellent characteristics with a high yield, since the group III nitride layer is grown on group III-nitride-film 13 -side main surface 13 m when the group III nitride layer is grown.
  • the method for manufacturing a group III nitride semiconductor device in the present reference embodiment can further include the step of further bonding device support substrate 40 onto group III nitride layer 20 ( FIG. 15 (B)), and the step of removing support substrate 11 from group III nitride composite substrate 1 ( FIG. 15 (C)). These steps can be added to enable group III nitride semiconductor devices having a high mechanical strength and excellent characteristics and supported by device support substrate 40 to be manufactured with a high yield. In the following, each step will be described specifically.
  • suitable methods for growing group III nitride layer 20 are gas phase methods such as MOVPE, MBE, HVPE, and sublimation method, as well as liquid phase methods such as flux method, in order to epitaxially grow group III nitride layer 20 having a high crystal quality, and a particularly suitable method is MOVPE.
  • group III nitride layer 20 varies depending on the type of group III nitride semiconductor device 4 .
  • group III nitride layer 20 may be configured by successively growing, on group III nitride film 13 , for example, an n-GaN layer 21 , an n-In 0.05 Ga 0.95 N layer 22 , an active layer 23 having a multiple quantum well structure, a p-Al 0.09 Ga 0.91 N layer 24 , and a p-GaN layer 25 .
  • group III nitride layer 20 is grown on group III nitride film 13 of group III nitride composite substrate 1 , and accordingly laminated group III nitride composite substrate 2 is obtained.
  • the step of further bonding device support substrate 40 onto group III nitride layer 20 as shown in FIG. 15 (B) is performed by forming a first electrode 30 and a pad electrode 33 on group III nitride layer 20 of laminated group III nitride composite substrate 2 , forming a pad electrode 43 and a joint metal film 44 on device support substrate 40 , and bonding joint metal film 44 to pad electrode 33 .
  • laminated substrate 3 is obtained.
  • As device support substrate 40 Si substrate, CuW substrate, or the like is used.
  • the step of removing support substrate 11 from group III nitride composite substrate 1 as shown in FIG. 15 (C) is performed by removing support substrate 11 of group III nitride composite substrate 1 from laminated substrate 3 .
  • joint film 12 interposed between support substrate 11 and group III nitride film 13 can simultaneously be removed.
  • the method for removing support substrate 11 and joint film 12 is not particularly limited, and suitable methods to be used are grinding, etching, and the like.
  • support substrate 11 formed of a material which is low in hardness, strength, and wear resistance, and is likely to be ground off, can be removed by at least one of grinding and polishing, in order to reduce the manufacturing cost.
  • Support substrate 11 formed of a material which can be dissolved in a chemical solution such as acid solution or alkali solution can be removed through etching with a chemical solution, since it requires low manufacturing cost.
  • a support substrate formed of a polycrystalline material such as ceramic material is more preferred as compared with a support substrate formed of a monocrystalline material such as sapphire, SiC, group III nitride (GaN for example), or the like, since the support substrate 11 of the polycrystalline material is easier to remove.
  • a second electrode 50 is formed and, on device support substrate 40 , a device support substrate electrode 45 is formed.
  • group III nitride semiconductor devices having remarkably excellent characteristics can be manufactured with a high yield.
  • group III nitride film 13 and support substrate 11 were bonded to each other in the following way.
  • support substrate 11 was prepared. Specifically, three mullite (Al 2 O 3 —SiO 2 ) substrates each having two main surfaces both polished into a mirror surface (flat surface having an arithmetic mean roughness Ra defined under JIS B0601 of 1 nm or less, this definition will be applied hereinafter) and having a diameter of 10.0 cm and a thickness of 500 ⁇ m were prepared. On main surface 11 m of this support substrate 11 , an SiO 2 film of 1 ⁇ m in thickness was formed as joint film 12 a by CVD.
  • group III nitride film 13 was prepared. Specifically, three different GaN films A to C each having two main surfaces both polished into a mirror surface and having a diameter of 10.0 cm and a thickness of 400 ⁇ m were prepared. GaN film A was not actively doped with a conductivity improver impurity. GaN film B was doped with O (oxygen) atoms serving as a conductivity improver impurity at a concentration of 7 ⁇ 10 17 cm ⁇ 3 . GaN film C was doped with O (oxygen) atoms serving as a conductivity improver impurity at a concentration of 1.6 ⁇ 10 18 cm ⁇ 3 .
  • each of main surface 12 am of joint film 12 a formed on support substrate 11 and main surface 12 bn of joint film 12 b formed on group III nitride film 13 was polished into a mirror surface, and thereafter main surface 12 am of joint film 12 a and main surface 12 bn of joint film 12 b were bonded to each other.
  • Annealing was performed by raising the temperature to 700° C. in an N 2 gas (nitrogen gas) atmosphere to thereby increase the joint strength.
  • the three different bonded substrates in which they were thus bonded to each other were each cut by dicing into eight bonded substrate pieces having a main surface of 20 mm ⁇ 20 mm (square of 20 mm ⁇ 20 mm, which will also be applied hereinafter).
  • the thickness of group III nitride film 13 of the eight bonded substrate pieces obtained from each of the three different bonded substrates was adjusted by polishing the main surface so that respective group III nitride films were 5 ⁇ m, 8 ⁇ m, 10 ⁇ m, 20 ⁇ m, 50 ⁇ m, 100 ⁇ m, 200 ⁇ m, and 500 ⁇ m.
  • respective group III nitride films were 5 ⁇ m, 8 ⁇ m, 10 ⁇ m, 20 ⁇ m, 50 ⁇ m, 100 ⁇ m, 200 ⁇ m, and 500 ⁇ m.
  • group III nitride layer 20 was grown by MOCVD.
  • second-conductivity-type GaN layer 205 second-conductivity-type Al t Ga 1-t N layer 204 , light-emitting layer 203 , and first-conductivity-type Al s Ga 1-a N layer 202 were each partially removed by mesa etching to expose a part of first-conductivity-type GaN layer 201 .
  • first-conductivity-type GaN layer 201 an n-side electrode was formed as first electrode 31 by electron beam vapor deposition.
  • second-conductivity-type GaN layer 205 a p-side electrode was formed as second electrode 32 by electron beam vapor deposition. In this way, 24 group III nitride semiconductor devices were fabricated.
  • a reference group III nitride semiconductor device was prepared in the following way. On main surface 13 m of the GaN substrate that was a (0001) plane corresponding to a group III atomic plane, namely Ga atomic plane, group III nitride layer 20 of the same structure as the above-described one was formed in a similar manner to the above-described one.
  • the GaN substrate had the two main surfaces both polished into a mirror surface and having a size of 20 mm ⁇ 20 mm and a thickness of 500 ⁇ m, and was doped with a conductivity improver impurity, namely O (oxygen) atoms, at a concentration of 1.6 ⁇ 10 18 cm ⁇ 3 .
  • the emission intensity of the 24 group III nitride semiconductor devices and the reference group III nitride semiconductor device obtained as described above was measured in the following way. Current of 80 mA was applied to the group III nitride semiconductor device. The emission intensity at a peak wavelength of 450 nm of the emission spectrum at this time was measured by the EL (Electro Luminescence) method. The ratio of the emission intensity of each of the 24 group III nitride semiconductor devices, relative to the emission intensity of the reference group III nitride semiconductor device, was calculated for use as a relative emission intensity.
  • the relative emission intensity of light-emitting devices having the other group III nitride composite substrates had a higher relative emission intensity of 0.1 or more.
  • group III nitride films 13 20 GaN films having a diameter of two inches (5.08 cm) and a thickness of 500 ⁇ m, doped with O (oxygen) atoms which were a conductivity improver impurity at a concentration of 7 ⁇ 10 17 cm ⁇ 3 , and having two main surfaces both polished into a mirror surface were prepared.
  • GaN films Of these GaN films, ten GaN films were polished so that the thickness was reduced to 200 ⁇ m. As a result, breakage and/or cracks occurred to seven GaN films out of the ten GaN films.
  • a mullite substrate having a diameter of two inches (5.08 cm) and a thickness of 400 ⁇ m was bonded through a similar procedure to Example 1, and thereafter the bonded GaN film was polished so that the thickness was reduced to 200 ⁇ m. Then, no breakage and/or cracks occurred to all of the ten GaN films.
  • the watermark is a dry stain formed as follows. As moisture in a portion of a surface where an impurity is present due to cleaning contamination or the like is dried, the portion is dried with the impurity aggregated, and accordingly the dry stain is formed.
  • the watermark can be formed by wetting a surface where the watermark is to be formed, with low-purity water rather than ultrapure water and drying it to thereby form the watermark in the portion wet with the low-impurity water.
  • the area of joined region 100 b was measured with a surface defect inspection apparatus using a laser. As a result, respective areas of the joined regions of the substrates relative to the area of main surface 1 m were 34%, 57%, 64%, 70%, 87%, and 95%.
  • group III nitride composite substrates 1 in which the area of joined region 100 b was 70% or more relative to the area of main surface 1 m had non-joined partial regions constituting non-joined region 100 n that all had a maximum size in radial direction of less than 20 mm.
  • group III nitride composite substrates 1 in which the area of joined region 100 b was 64% or less relative to the area of main surface 1 m some non-joined partial regions constituting non-joined region 100 n had a maximum size in radial direction of 20 mm or more.
  • group 111 nitride composite substrates 1 in which the area of joined region 100 b was 64% or less relative to the area of main surface 1 m were heated to 700° C.
  • group III nitride film 13 was peeled off during the heating, from support substrate 11 from the non-joined partial region with a maximum size in radial direction of 20 mm or more.
  • Three group III nitride composite substrates 1 were fabricated through a similar procedure to Example 1, except that: a GaN film having a diameter of two inches (5.08 cm) and a thickness of 500 ⁇ m, doped with no conductivity improver impurity, and having two main surfaces both polished into a mirror surface was used as group III nitride film 13 ; a polycrystalline Mo substrate having a diameter of two inches (5.08 cm) and a thickness of 500 ⁇ m and having two main surfaces both polished into a mirror surface was used as support substrate 11 ; the surfaces to be bonded to each other were cleaned in the process of bonding to thereby reduce generation of non-joined regions; and a water mark having a diameter on the order of 15 mm was formed on the surface to be bonded to thereby form a non-joined region at a predetermined position of the group III nitride composite substrate.
  • the position of the non-joined region was measured with an ultrasonic microscope.
  • the non-joined region including a non-joined partial region having a maximum size in radial direction on the order of 10 mm and abutting on the perimeter of the main surface.
  • the non-joined region including only a non-joined partial region having a maximum size in radial direction on the order of 10 mm and failing to abut on the perimeter of the main surface.
  • the area of the non-joined region was 83% relative to the area of the main surface.
  • the obtained three group III nitride composite substrates were heated to 700° C.
  • the group III nitride composite substrate in which there was formed the non-joined region including the non-joined partial region which had a maximum size in radial direction on the order of 10 mm and abutted on the perimeter of the main surface was broken during the heating.
  • the remaining group III nitride composite substrates were not broken.
  • GaN films As group III nitride films, eight GaN films whose two main surfaces were both polished into a mirror surface, main surface was 20 mm ⁇ 20 mm, and thickness was 300 ⁇ m were prepared.
  • the eight GaN films were divided into four sets each including two GaN films, and main-surface through holes having a diameter on the order of 50 ⁇ m were formed so that the area of the main-surface through holes relative to the area of the main surface were 5%, 10%, 20%, and 30%, respectively in these four sets.
  • the support substrate was a sapphire substrate whose main surface was 20 mm ⁇ 20 mm and thickness was 400 ⁇ m and an SiO 2 film was formed as the joint film on the main surface of the sapphire substrate.
  • the main surface of the joint film was polished into a mirror surface.
  • four of the eight substrates were cleaned multiple times in an aqueous solution containing 37% by mass of HCl (hydrochloric acid) and 30% by mass of H 2 O 2 (hydrogen peroxide), to thereby remove an impurity containing metal on the surface to be bonded.
  • the remaining four substrates were cleaned with IPA (isopropyl alcohol).
  • Example 1 The four group III nitride films in which respective areas of the main-surface through holes were 5%, 10%, 20%, and 30% relative to the area of the main surface, and the four support substrates in which the surface of the joint film to be bonded was cleaned with HCl and H 2 O 2 were bonded to each other under similar conditions to Example 1. Further, the four group III nitride films in which respective areas of the main-surface through holes were 5%, 10%, 20%, and 30% relative to the area of the main surface and the four support substrates in which the surface of the joint film to be bonded was cleaned with IPA were bonded to each other under similar conditions to Example 1.
  • a tensile test was performed in the following way.
  • the tensile test was performed by attaching a jig of 10 mm ⁇ 10 mm with an epoxy adhesive to the front and rear sides of the group III nitride composite substrate and pulling both ends of the jig.
  • the results are summarized in Table 2.
  • Table 2 the composite substrates on which fracture occurred between the epoxy adhesive and the jig exhibit a higher joint strength than those in which the group III nitride film and the joint film are separated from each other along their interface.
  • the composite substrates which were cleaned with IPA had a higher joint strength where the area of the main-surface through hole of the group 111 nitride film was 10% or less relative to the area of the main surface.
  • concentration of an impurity containing metal on the surface to be bonded of the joint film cleaned with HCl and H 2 O 2 and that of the joint film cleaned with IPA were measured by TXRF (total reflection x-ray fluorescence) analysis.
  • Those cleaned with HCl and H 2 O 2 had an Fe concentration and an Ni concentration which were both 1 ⁇ 10 10 cm ⁇ 2 or less.
  • Those cleaned with IPA had an Fe concentration of 5.7 ⁇ 10 11 cm ⁇ 2 and an Ni concentration of 1.5 ⁇ 10 11 cm ⁇ 2 .
  • the group III nitride film one GaN film having a diameter of two inches (5.08 cm) and a thickness of 400 ⁇ m, doped with O (oxygen) atoms at a concentration of 6 ⁇ 10 17 cm ⁇ 3 which was a conductivity improver impurity, and having two main surfaces both polished into a mirror surface was prepared.
  • O (oxygen) atoms at a concentration of 6 ⁇ 10 17 cm ⁇ 3 which was a conductivity improver impurity, and having two main surfaces both polished into a mirror surface was prepared.
  • H (hydrogen) ions were implanted to a position at a depth of about 0.7 ⁇ m from the main surface.
  • the H ions were implanted with an acceleration voltage of 100 keV and a dose of 5 ⁇ 10 17 cm ⁇ 2
  • the main surface, where the H ions were implanted, of the group III nitride film implanted with the H ions, and a mullite substrate having a diameter of two inches (5.08 cm) and a thickness of 500 ⁇ m, were bonded to each other and annealed through a similar procedure to Example 1. Accordingly, the group III nitride film was separated along the region where the H ions were implanted, so that a group III nitride composite substrate in which a group III nitride film of 0.3 ⁇ m in thickness is formed on the mullite substrate was obtained.
  • the sheet resistance of the obtained group III nitride composite substrate was 1 ⁇ 10 10 ⁇ /sq or more.
  • a group III nitride composite substrate having a group III nitride film of 0.3 ⁇ m in thickness on an Mo substrate was produced through a similar procedure to Comparative Example 1, except that the Mo substrate having a diameter of two inches (5.08 cm) and a thickness of 300 ⁇ m and having two main surfaces both polished into a mirror surface was used as the support substrate, and that the dose of H ions was 3.5 ⁇ 10 17 cm ⁇ 2 .
  • the obtained group III nitride composite substrate was further heat-treated at 800° C. for three hours in an N 2 gas (nitrogen gas) atmosphere. Accordingly, the sheet resistance was reduced to 6700 ⁇ /sq in most of the region, while the sheet resistance was still a high resistance of 35000 ⁇ /sq in a part of the region.
  • a mullite substrate having a diameter of 75 mm was prepared for use as support substrate 11 . Both surfaces of support substrate 11 were subjected to rough polishing by means of diamond abrasive grains and a copper-based surface plate, intermediate polishing by means of diamond abrasive grains and a tin surface plate, and finish polishing by means of a nonwoven polishing pad so that the surfaces were mirror-finished to have an RMS (root mean square roughness) of 5 nm or less. After this, an SiO 2 film was grown on this to a thickness of 800 nm by the LP-CVD (Low Pressure-Chemical Vapor Deposition) method.
  • LP-CVD Low Pressure-Chemical Vapor Deposition
  • CMP was performed using a slurry having a pH of 10 and containing colloidal silica abrasive grains having an average grain size of 40 nm, to thereby form joint film 12 a having a thickness of 400 nm and planarized so that the RMS of the main surface was 0.3 nm or less.
  • non-abrasive polishing cleaning with a KOH aqueous solution and cleaning with pure water were performed.
  • a GaN crystal body having a diameter of 75 mm and a thickness of 8 mm was prepared for use as group III nitride film donor substrate 13 D.
  • a surface-to-be-bonded of group III nitride film donor substrate 13 D was subjected to mechanical polishing and CMP so that it was mirror-finished to have an RMS of 2 nm or less.
  • an SiO 2 film having a thickness of 800 nm was grown by the LP-CVD (Low Pressure-Chemical Vapor Deposition) method on the surface-to-be-bonded, and CMP was performed using a slurry having a pH of 10 and containing colloidal silica abrasive grains having an average grain size of 40 nm, to thereby form joint film 12 b having a thickness of 500 nm and having a main surface planarized to have an RMS of 0.3 nm or less.
  • non-abrasive polishing cleaning with a KOH aqueous solution and cleaning with pure water were performed.
  • group III nitride film donor substrate 13 D was produced through growth by the HVPE method using a GaAs substrate as a base substrate.
  • joint film 12 a and joint film 12 b were bonded together to thereby produce joined substrate 1 L in which support substrate 11 and group III nitride film 13 were bonded to each other with joint film 12 interposed therebetween. After they were bonded together, joined substrate 1 L was annealed by being heated in a nitrogen gas atmosphere to 800° C., to thereby increase the joint strength.
  • group III nitride film donor substrate 13 D in joined substrate 1 L was cut, with a wire saw, along a plane located inwardly at a depth of 180 ⁇ m from the bonded surface, namely the surface of group III nitride film donor substrate 13 D bonded to joint film 12 , to thereby produce group III nitride composite substrate 1 in which support substrate 11 and the GaN film which was group III nitride film 13 were bonded together with joint film 12 interposed therebetween.
  • the wire a fixed-abrasive wire on which diamond abrasive grains were electrodeposited was used.
  • the method in order to reduce the cut resistance and enhance the thickness precision and the flatness, the method was used that caused the wire to swing and caused group III nitride film donor substrate 13 D to vibrate in synchronization therewith.
  • the resistance coefficient for cutting with the wire saw was set to 4200 N.
  • group III nitride film 13 of group III nitride composite substrate 1 was subjected to mechanical polishing and CMP.
  • the composite substrate was mounted on a CMP apparatus in the following way. The shape of the substrate was corrected in advance by vacuum chuck suction, and thereafter the composite substrate was suction-fixed onto the apparatus.
  • the ratio s t /m t of standard deviation s t of the thickness of group III nitride film 13 , to mean value m t of the thickness thereof, and the ratio s o /m o of standard deviation s o of an absolute value of an off angle between the main surface of the group III nitride film and the (0001) plane, to mean value m o of the absolute value of the off angle thereof are shown in Table 3.
  • mean value m t of the thickness, standard deviation s t of the thickness, mean value m o of the absolute value of the off angle, and standard deviation s o of the absolute value of the off angle were calculated from the thickness and the absolute value of the off angle of group III nitride film 13 at the 13 measurement points P on main surface 13 m of group III nitride film 13 as shown in FIG.
  • group III nitride layer 20 was formed by the MOVPE method. Specifically, on group III nitride film 13 , n-GaN layer 21 having a thickness of 5 ⁇ m, n-In 0.05 Ga 0.95 N layer 22 having a thickness of 50 nm, active layer 23 having a multiple quantum well structure of three cycles constituted of an In 0.14 Ga 0.86 N well layer having a thickness of 3 nm and a GaN barrier layer having a thickness of 15 nm, p-Al 0.09 Ga 0.91 N layer 24 having a thickness of 20 nm, and p-GaN layer 25 having a thickness of 150 nm were successively epitaxially grown to thereby produce laminated group III nitride composite substrate 2 . After this, it was annealed by an RTA (Rapid Thermal Annealing) apparatus and accordingly activated.
  • RTA Rapid Thermal Annealing
  • an Ni layer having a thickness of 4 nm and an Au layer having a thickness of 200 nm were successively formed by the EB (Electron Beam) deposition method, and annealed into an alloy, to thereby form first electrode 30 .
  • a Ti layer having a thickness of 200 nm, a Pt layer having a thickness of 100 nm, and an Au layer having a thickness of 1000 nm were successively formed by the EB deposition method to thereby form pad electrode 33 .
  • a CuW substrate was prepared for use as device support substrate 40 .
  • a Ti layer having a thickness of 200 nm, a Pt layer having a thickness of 100 nm, and an Au layer having a thickness of 1000 nm were successively formed by the EB deposition method to thereby form pad electrode 43 .
  • an AuSn solder film was formed as joint metal film 44 .
  • joint metal film 44 was bonded to pad electrode 33 to thereby produce laminated substrate 3 .
  • support substrate 11 and joint film 12 in group III nitride composite substrate 1 were etched away by means of hydrofluoric acid.
  • a Ti layer having a thickness of 20 nm, an Al layer having a thickness of 200 nm, and an Au layer having a thickness of 300 nm were successively formed by the EB deposition method, and then annealed to form second electrode 50 .
  • a Ti layer having a thickness of 20 nm and an Au layer having a thickness of 300 nm were successively formed by the EB deposition method, and annealed to thereby form device support substrate electrode 45 . In this way, group III nitride semiconductor device 4 was obtained.
  • group III nitride semiconductor device 4 For group III nitride semiconductor device 4 thus obtained, its optical output was measured by means of an integrating sphere under the condition that injected current was 4 A.
  • the optical output of the light-emitting device was measured in the following way. Specifically, into the light-emitting device mounted in the integrating sphere, predetermined current was injected, and the optical output was measured by a detector receiving the light collected from the light-emitting device.
  • the resultant group III nitride semiconductor devices were classified into non-defective devices meeting a standard that the optical output was 2 W or more and defective devices failing to meet this standard, and the percentage of the ratio determined by dividing the non-defective devices by the sum of the non-defective devices and the defective devices was defined as a yield.
  • the yield of the group III nitride semiconductor devices is summarized in Table 3.
  • group III nitride semiconductor devices manufactured with a high yield were those using a group III nitride composite substrate having a diameter of 75 mm and including a group III nitride film having a thickness of 150 ⁇ m, where the ratio s t /m t of standard deviation s t of the thickness of the group III nitride film, to mean value m t of the thickness thereof was 0.001 or more and 0.2 or less, and the ratio s o /m o of standard deviation s o of an absolute value of an off angle between the main surface of the group III nitride film and the (0001) plane, to mean value m o of the absolute value of the off angle thereof was 0.005 or more and 0.6 or less.
  • Reference Example I-A1 sophisticated control was necessary for cutting and polishing in order to reduce the thickness variation and the off-angle variation, and thus the cutting and polishing took a long time.
  • group III nitride composite substrate 1 and group III nitride semiconductor device 4 were produced in a similar manner to Reference Example I-A, except that a mullite-YSZ substrate (with respect to the whole substrate, mullite was 70% by mass and YSZ was 30% by mass and, with respect to YSZ, ZrO 2 was 90% by mole and Y 2 O 3 was 10% by mole) was used as support substrate 11 , and group III nitride composite substrates 1 having a diameter of 75 mm, a diameter of 100 mm, a diameter of 125 mm, and a diameter of 150 m, respectively, were produced.
  • a mullite-YSZ substrate with respect to the whole substrate, mullite was 70% by mass and YSZ was 30% by mass and, with respect to YSZ, ZrO 2 was 90% by mole and Y 2 O 3 was 10% by mole
  • group III nitride semiconductor devices manufactured with a high yield were those using a group III nitride composite substrate having a diameter of 75 mm to 150 mm and including a group III nitride film having a thickness of 10 ⁇ m to 250 ⁇ m, where the ratio s t /m t of standard deviation s t of the thickness of the group III nitride film, to mean value m t of the thickness thereof was 0.12 falling within a range of 0.001 or more and 0.2 or less, and the ratio s o /m o of standard deviation s o of an absolute value of an off angle between the main surface of the group III nitride film and the (0001) plane, to mean value m o of the absolute value of the off angle thereof was 0.3 falling within a range of 0.005 or more and 0.6 or less.
  • the FS substrate was prepared to have the diameter and the thickness shown in Table 5, by cutting a GaN crystal body having a predetermined diameter with a wire saw and polishing it.
  • the BP substrate was prepared to have the diameter and the thickness of its group III nitride film shown in Table 5. Specifically, as shown in FIG. 17 (B), hydrogen ions were implanted from the main surface of the GaN crystal body having a predetermined diameter, namely group III nitride film donor substrate 13 D, to the position of a predetermined depth located inwardly from the main surface, to thereby form an ion implantation region 13 i . After this, as shown in FIG. 17 (C), support substrate 11 and the ion implantation region 13 i side of group III nitride film donor substrate 13 D were bonded together with joint film 12 interposed therebetween. After this, as shown in FIG. 17 (D), annealing was done at 850° C. to separate group III nitride film donor substrate 13 D along its ion implantation region 13 i . Here, a mullite substrate was used as support substrate 11 .
  • the BS substrate was prepared to have the diameter and the thickness of its group III nitride film as shown in Table 5, in a similar manner to Reference Example I-B except that a mullite substrate was used as the support substrate.
  • Group III nitride composite substrates 1 and group III nitride semiconductor devices 4 were fabricated in a similar manner to Reference Example I-B, except that the above-described FS substrate, BP substrate, and BS substrate were used.
  • the ratio s t /m t of standard deviation s t of the thickness of group III nitride film 13 , to mean value m t of the thickness thereof, and the ratio s o /m o of standard deviation s o of an absolute value of an off angle between the main surface of the group III nitride film and the (0001) plane, to mean value m o of the absolute value of the off angle thereof were calculated for group III nitride composite substrate 1 .
  • the results are summarized in Table 5.
  • the yield of group III nitride semiconductor devices 4 was also calculated in a similar manner to Reference Example I-A. The results are summarized in Table 5.
  • group III nitride semiconductor devices fabricated using BP substrates having a diameter of 75 mm to 125 mm and a thickness of the group III nitride film of 0.5 ⁇ m, they did not exhibit excellent device characteristics due to the relatively small thickness of the group III nitride film, resulting in lower yields.
  • the yields of the group III nitride semiconductor devices produced using BS substrates were higher, namely 65% or more.
  • a plurality of group III nitride composite substrates were fabricated in a similar manner to Reference Example I-B, except that an Al 2 O 3 —SiO 2 composite oxide substrate (with respect to the whole substrate, Al 2 O 3 was 85% by mass and SiO 2 was 15% by mass) was used as the support substrate.
  • the warp and the TTV of the substrates were measured. The results are shown in Table 6.
  • the warp and the TTV of the group III nitride composite substrates were measured by means of an optical interferometric flatness tester.
  • the group III nitride semiconductor devices manufactured with a high yield were those using group III nitride composite substrates having a warp of the main surface on the group III nitride film side of 50 ⁇ m or less and having a TTV of 30 ⁇ m or less.
  • Group III nitride semiconductor devices were fabricated in a similar manner to Reference Example I-B, except that different types of group III nitride composite substrates were used that were different in ratio ⁇ III-N / ⁇ S of thermal expansion coefficient ⁇ III-N of the group III nitride film to thermal expansion coefficient ⁇ S of the support substrate, and ratio t III-N /t S of thickness t III-N of the group III nitride film to thickness t S of the support substrate.
  • mullite substrate, mullite-YSZ substrate, and Al 2 O 3 —SiO 2 composite oxide substrate having different thicknesses were used as base substrates.
  • the ratio ⁇ III-N / ⁇ S of thermal expansion coefficient ⁇ III-N of the group III nitride film to thermal expansion coefficient ⁇ S of the support substrate, the ratio t III-N /t S of thickness of the group III nitride film to thickness t S of the support substrate, and the yield of the group III nitride semiconductor devices are summarized in Table 7.
  • the group III nitride semiconductor devices manufactured with a high yield were those using group III nitride composite substrates having a ratio ⁇ III-N / ⁇ S of thermal expansion coefficient of the group III nitride film to thermal expansion coefficient ⁇ s of the support substrate of 0.75 or more and 1.25 or less, and a ratio t III-N /t S of thickness of the group III nitride film to thickness t S of the support substrate of 0.02 or more and 1 or less.
  • Group III nitride composite substrates and group III nitride semiconductor devices were produced in a similar manner to Reference Example I-B, except that the cleaning conditions were tailored to adjust the amount of impurity metal atoms of the surface of the group III nitride film.
  • the diameter of the group III nitride composite substrate, the amount of impurity metal atoms of the surface of the group III nitride film, and the yield of the group III nitride semiconductor devices are summarized in Table 8.
  • the amount of impurity metal atoms of the surface of the group III nitride film was measured by the TXRF (Total Reflection X-ray Fluorescence) method.
  • the measurements by the TXRF method were done by means of a tungsten (W) x-ray source under a condition that the angle of incidence was 0.05°.
  • group III nitride semiconductor devices manufactured with a high yield were those using group III nitride composite substrates having impurity metal atoms of the main surface of the group III nitride film of 3 ⁇ 10 12 atoms/cm 2 or less.
  • Group III nitride composite substrates and group III nitride semiconductor devices were fabricated in a similar manner to Reference Example I-B, except that a mullite substrate was used as the support substrate and, as the group III nitride film donor substrate, a uniform GaN crystal body without dislocation concentrated region that had O and Si added as dopants and had a dislocation density of 4 ⁇ 10 6 cm ⁇ 2 and a carrier concentration of 2 ⁇ 10 18 cm ⁇ 3 was used.
  • the polishing conditions were tailored to adjust the maximum RMS of respective main surfaces of the group III nitride film and the support substrate.
  • the maximum RMS of the main surface of the group III nitride film and the maximum RMS of the main surface of the support substrate, as well as the yield of the group III nitride semiconductor devices are summarized in Table 9.
  • group III nitride semiconductor devices manufactured with a high yield were those using group III nitride composite substrates having an RMS of the main surface of the group III nitride film of 3 nm or less and an RMS of the main surface of the support substrate of 12 nm or less.
  • Group III nitride composite substrates were fabricated in a similar manner to Reference Example I-B, except that an Al 2 O 3 —SiO 2 composite oxide substrate (with respect to the whole substrate, Al 2 O 3 was 82% by mass and SiO 2 was 18% by mass) was used as the support substrate and, as the group III nitride film donor substrate, a semi-insulating GaN crystal body having Fe added as a dopant and a specific resistance of 1 ⁇ 10 7 ⁇ cm was used.
  • polishing conditions were tailored to adjust mean value m III-N and standard deviation of the RMS of the main surface of the group III nitride film in the group III nitride composite substrate as well as mean value m S and standard deviation s S of the RMS of the main surface of the support substrate.
  • an HEMT was fabricated as group III nitride semiconductor device 4 in the following manner.
  • a source electrode 60 and a drain electrode 70 were fabricated by photolithography, EB deposition, and lift-off.
  • a Ti layer having a thickness of 20 nm, an Al layer having a thickness of 100 nm, a Ti layer having a thickness of 20 nm, and an Au layer having a thickness of 300 nm were successively formed, lifted off, and annealed for 1 minute at 600° C. into an alloy.
  • a gate electrode 80 was fabricated.
  • an Ni layer having a thickness of 50 nm and an Au layer having a thickness of 500 nm were successively formed.
  • the gate length was set to 2 ⁇ m.
  • GaN layer 26 and Al 0.2 Ga 0.8 N layer 27 were formed as at least one group III nitride layer 20 on group III nitride film 13 of group III nitride composite substrate 1 , and source electrode 60 , drain electrode 70 , and gate electrode 80 were disposed on Al 0.2 Ga 0.8 N layer 27 so that the electrodes were separated from each other and gate electrode 80 was located between source electrode 60 and drain electrode 70 .
  • the leakage gate current density of the obtained HEMT was inspected. Specifically, the produced devices were classified into non-defective devices meeting a standard that the leakage gate current density was 1 ⁇ 10 ⁇ 6 A/cm 2 or less when being applied with a gate voltage of 5 V, and defective devices failing to meet this standard, and the percentage of the ratio determined by dividing the non-defective devices by the sum of the non-defective devices and the defective devices was defined as a yield.
  • joined substrate 1 L was produced in a similar manner to Reference Example I-A, except that: an Al 2 O 3 —SiO 2 composite oxide substrate (with respect to the whole substrate, Al 2 O 3 was 88% by mass and SiO 2 was 12% by mass) having a diameter of 100 mm was prepared for use as support substrate 11 ; a GaN crystal substrate having a diameter of 100 mm and a thickness of 400 ⁇ m was prepared for use as group III nitride film donor substrate 13 D; on respective main surfaces of support substrate 11 and group III nitride film donor substrate 13 D, an SiO 2 film was grown to a thickness of 500 nm by the PE-CVD method, and thereafter CMP was performed using a slurry having a pH of 9 and containing colloidal silica having an average grain size of 20 nm, to thereby form joint films 12 a , 12 b having a thickness of 250 nm and having a main surface planarized to have an RMS rough
  • group III nitride semiconductor devices manufactured with a high yield were those using a group III nitride composite substrate including a group III nitride film where the ratio s t /m t of standard deviation s t of the thickness of the group III nitride film, to mean value m t of the thickness thereof was 0.001 or more and 0.2 or less, and the ratio s o /m o of standard deviation s o of an absolute value of an off angle between the main surface of the group III nitride film and the (0001) plane, to mean value m o of the absolute value of the off angle thereof was 0.005 or more and 0.6 or less.
  • Example I-H sophisticated control was necessary for the grinding and polishing in order to reduce the thickness variation and the off-angle variation, and thus the grinding and polishing took a long time.
  • an Al 2 O 3 —SiO 2 composite oxide substrate (with respect to the whole substrate, Al 2 O 3 was 85% by mass and SiO 2 was 15% by mass) having a diameter of 75 mm and a thickness of 300 ⁇ m was prepared for use as support substrate 11 .
  • Support substrate 11 had a thermal conductivity of 10 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 and a Young's modulus of 250 GPa.
  • Main surfaces 11 m , 11 n of the two opposite sides respectively of support substrate 11 were subjected to rough polishing with a copper-based surface plate, intermediate polishing with a tin surface plate, and finish polishing with a nonwoven polishing pad in which grating grooves were formed, for which a diamond slurry was used as an abrasive.
  • the finish polishing was performed under the condition that action coefficient FE was 4 ⁇ 10 ⁇ 17 m 2 /s or more and 1 ⁇ 10 ⁇ 16 m 2 /s or less.
  • an SiO 2 film of 800 nm in thickness was grown by the PE-CVD (Plasma Enhanced-Chemical Vapor Deposition) method, annealed in a nitrogen atmosphere at 800° C. for an hour, and thereafter subjected to CMP (Chemical Mechanical Polishing) using a slurry with a pH of 10 containing colloidal silica abrasive grains having an average grain size of 40 nm, to thereby form joint film 12 a of 400 nm in thickness having its main surface 12 am mirror-finished so that the RMS (root mean square roughness) was 0.3 nm or less.
  • PE-CVD Pullasma Enhanced-Chemical Vapor Deposition
  • CMP Chemical Mechanical Polishing
  • non-abrasive polishing cleaning with a KOH aqueous solution polishing cleaning with pure water
  • megasonic cleaning cleaning with ultrasonic waves in a megasonic frequency range of 500 kHz to 5 MHz
  • a GaN crystal body having a diameter of 75 mm and a thickness of 8 mm was prepared for use as group III nitride film donor substrate 13 D.
  • a surface-to-be-bonded of group III nitride film donor substrate 13 D was subjected to mechanical polishing and CMP so that it was planarized to have an RMS of 2 nm or less.
  • an SiO 2 film of 800 nm in thickness was grown on this substrate by the PE-CVD method, annealed in a nitrogen atmosphere at 800° C.
  • group III nitride film donor substrate 13 D was produced through growth by the HVPE method using a GaAs substrate as a base substrate.
  • Group III nitride film donor substrate 13 D had its electrical conductivity of n-type, its dislocation density of 1 ⁇ 10 8 cm ⁇ 2 , and its carrier concentration of 1 ⁇ 10 17 .
  • joint film 12 a and main surface 12 bn of joint film 12 b were bonded together to thereby produce joined substrate 1 L in which support substrate 11 and group III nitride film 13 were bonded to each other with joint film 12 interposed therebetween.
  • joined substrate 1 L was annealed by being heated in a nitrogen gas atmosphere to 800° C., to thereby increase the joint strength.
  • group III nitride film donor substrate 13 D in joined substrate 1 L was cut, with a wire saw, along a plane located inwardly at a depth of 150 ⁇ m from the bonded surface where group III nitride film donor substrate 13 D was bonded to joint film 12 , to thereby produce group III nitride composite substrate 1 in which support substrate 11 and the GaN film which was group III nitride film 13 were bonded together with joint film 12 interposed therebetween.
  • the wire a fixed-abrasive wire with a diameter of 180 ⁇ m on which diamond abrasive grains were electrodeposited was used.
  • the method in order to reduce the cut resistance and enhance the thickness precision and the flatness, the method was used that caused the wire to swing and caused group III nitride film donor substrate 13 D to vibrate in synchronization therewith.
  • the resistance coefficient for cutting with the wire saw was set to 4200 N.
  • group III nitride film 13 of group III nitride composite substrate 1 was subjected to mechanical polishing and CMP.
  • the composite substrate was mounted on a CMP apparatus in the following way. The shape of the substrate was corrected in advance by vacuum chuck suction, and thereafter the composite substrate was suction-fixed onto the apparatus.
  • Group III-nitride-film 13 -side main surface 13 m of group III nitride composite substrate 1 thus obtained was subjected to rough polishing with a copper-based surface plate and intermediate polishing with a tin surface plate, using a diamond slurry as an abrasive, and further subjected to finish polishing with a nonwoven polishing pad using, as an abrasive, a slurry with a pH of 11 containing colloidal silica abrasive grains.
  • the finish polishing was performed under the condition that action coefficient FE was 6 ⁇ 10 ⁇ 14 m 2 /s. After the finish polishing, group III nitride film 13 had a thickness of 110 ⁇ m.
  • mean value m S of the RMS of support-substrate 11 -side main surface 11 n mean value m S of the RMS of support-substrate 11 -side main surface 11 n , and the ratio s S /m S of standard deviation s S of the RMS to mean value m S of the RMS of support-substrate 11 -side main surface 11 n are summarized in Table 12.
  • mean value m S of the RMS and the ratio s S /m S of standard deviation s S of the RMS to mean value m S of the RMS were calculated from the RMS of support-substrate 11 -side main surface 11 n at the 13 measurement points P on support-substrate 11 -side main surface 11 n shown in FIG.
  • group III nitride layer 20 was formed by the MOVPE method. Specifically, on group III nitride film 13 , n-GaN layer 21 having a thickness of 5 ⁇ m, n-In 0.05 Ga 0.95 N layer 22 having a thickness of 50 nm, active layer 23 having a multiple quantum well structure of three cycles constituted of an In 0.14 Ga 0.86 N well layer having a thickness of 3 nm and a GaN barrier layer having a thickness of 15 nm, p-Al 0.09 Ga 0.91 N layer 24 having a thickness of 20 nm, and p-GaN layer 25 having a thickness of 150 nm were successively epitaxially grown to thereby produce laminated group III nitride composite substrate 2 . After this, it was annealed by an RTA (Rapid Thermal Annealing)
  • joint metal film 44 was bonded to pad electrode 33 to thereby produce laminated substrate 3 .
  • support substrate 11 and joint film 12 in group III nitride composite substrate 1 were etched away by means of hydrofluoric acid.
  • a Ti layer having a thickness of 20 nm, an Al layer having a thickness of 200 nm, and an Au layer having a thickness of 300 nm were successively formed by the EB deposition method, and then annealed to form second electrode 50 .
  • a Ti layer having a thickness of 20 nm and an Au layer having a thickness of 300 nm were successively formed by the EB deposition method, and annealed to thereby form device support substrate electrode 45 . In this way, group III nitride semiconductor device 4 was obtained.
  • group III nitride semiconductor device 4 For group III nitride semiconductor device 4 thus obtained, its optical output was measured by means of an integrating sphere under the condition that injected current was 4 A.
  • the optical output of the light-emitting device was measured in the following way. Specifically, into the light-emitting device mounted in the integrating sphere, predetermined current was injected, and the optical output was measured by a detector receiving the light collected from the light-emitting device.
  • the resultant group III nitride semiconductor devices were classified into non-defective devices meeting a standard that the optical output was 2 W or more and defective devices failing to meet this standard, and the percentage of the ratio determined by dividing the non-defective devices by the sum of the non-defective devices and the defective devices was defined as a yield.
  • the yield of the group III nitride semiconductor devices is summarized in Table 12.
  • group III nitride composite substrate 1 and group III nitride semiconductor device 4 were produced in a similar manner to Reference Example II-A, except that: a mullite-YSZ substrate (with respect to the whole substrate, mullite was 70% by mass and YSZ was 30% by mass, with respect to mullite, Al 2 O 3 was 60% by mole and SiO 2 was 40% by mole and, with respect to YSZ, ZrO 2 was 90% by mole and Y 2 O 3 was 10% by mole) was used as support substrate 11 ; different diameters in a range of 75 mm to 150 mm were used and support-substrate 11 -side main surface 11 n was finish-polished under the condition that action coefficient FE was 6.2 ⁇ 10 ⁇ 17 m 2 /s; and group III nitride composite substrates 1 were fabricated in which respective group III nitride films 13 after finish-polished had different thicknesses in a range of 10 ⁇ m
  • a group III nitride free-standing substrate hereinafter also referred to as FS substrate
  • a group III nitride composite substrate hereinafter also referred to as BP substrate
  • BS substrate group III nitride composite substrate
  • the FS substrate was prepared to have the diameter and the thickness shown in Table 4, by cutting a GaN crystal body having a predetermined diameter with a wire saw and polishing it.
  • the BP substrate was prepared to have the diameter and the thickness of its group III nitride film shown in Table 14. Specifically, as shown in FIG. 17 (B), hydrogen ions were implanted from main surface 13 n of the GaN crystal body having a predetermined diameter, namely group III nitride film donor substrate 13 D, to the position of a predetermined depth located inwardly from the main surface, to thereby form an ion implantation region 13 i . After this, as shown in FIG. 17 (C), support substrate 11 and the ion implantation region 13 i side of group III nitride film donor substrate 13 D were bonded together with joint film 12 interposed therebetween. After this, as shown in FIG. 17 (D), annealing was done at 700° C.
  • group III nitride film donor substrate 13 D along its ion implantation region 13 i .
  • an Al 2 O 3 —SiO 2 composite oxide substrate (with respect to the whole substrate, Al 2 O 3 was 85% by mass and SiO 2 was 15% by mass) was used as support substrate 11 .
  • the BS substrate was prepared to have the diameter and the thickness of its group III nitride film as shown in Table 14, in a similar manner to Reference Example II-B except that an Al 2 O 3 —SiO 2 composite oxide substrate (with respect to the whole substrate, Al 2 O 3 was 85% by mass and SiO 2 was 15% by mass) was used as the support substrate.
  • Group III nitride composite substrates 1 and group III nitride semiconductor devices 4 were fabricated in a similar manner to Reference Example II-B, except that the above-described FS substrate, BP substrate, and BS substrate were used, finish polishing of support-substrate 11 -side main surface 11 n was performed under the condition that action coefficient FE was 4.0 ⁇ 10 ⁇ 17 m 2 /s.
  • group III nitride semiconductor devices fabricated using FS substrates with a diameter of 50 mm to 125 mm and a thickness of 250 ⁇ m to 500 ⁇ m the group III nitride semiconductor devices with a relatively large diameter and a relatively small thickness had a large warp and were likely to crack, and the yields of them were all less than 60%.
  • group III nitride semiconductor devices fabricated using BP substrates with a diameter of 75 mm to 125 mm and a thickness of 0.5 ⁇ m of the group III nitride film, the devices did not exhibit excellent device characteristics due to the relatively small thickness of the group III nitride film, resulting in lower yields.
  • the yields of the group III nitride semiconductor devices fabricated using BS substrates were higher, namely 69% or more.
  • the BS substrate has a larger thickness of the group III nitride film to allow electric current to be sufficiently distributed, as compared with the BP substrate.
  • the BS substrate has no deterioration, due to ion implantation, of the crystal quality of the group III nitride film. Therefore, the semiconductor devices fabricated using the BS substrate exhibited excellent characteristics.
  • group III nitride semiconductor devices manufactured with a high yield were those fabricated using a group III nitride composite substrate with a diameter of 75 mm to 150 mm (this value meets 75 mm or more) including a group III nitride film with a thickness of 110 ⁇ m to 130 ⁇ m (this value meets 10 ⁇ m or more and 250 ⁇ m or less), where mean value m S of the RMS of the support-substrate-side main surface was 3 nm (this value meets 0.3 nm or more and 20 nm or less), the ratio s S /m S of standard deviation s S of the RMS to mean value m S of the RMS of the support-substrate-side main surface was 0.1 (this value meets 0.005 or more and 0.4 or less), and the ratio W/D of warp W of support-substrate 11 -side main surface 11 n to diameter D was ⁇ 7 ⁇ 10 ⁇ 4 or more and 8 ⁇ 10 ⁇ 4 or less
  • mean value m S of the RMS of support-substrate 11 -side main surface 11 n mean value m S of the RMS of support-substrate 11 -side main surface 11 n , and the ratio s S /m S of standard deviation s S of the RMS to mean value m S of the RMS of support-substrate 11 -side main surface 11 n were calculated and summarized in Table 16.
  • mean value m III-N of the RMS of group III-nitride-film 13 -side main surface 13 m mean value of the RMS of group III-nitride-film 13 -side main surface 13 m
  • ratio s III-N /m III-N of standard deviation s III-N of the RMS to mean value of the RMS of group III-nitride-film 13 -side main surface 13 m are summarized in Table 16.
  • mean value m III-N of the RMS and the ratio s III-N /m III-N of standard deviation of the RMS to mean value of the RMS were calculated from the RMS of group III-nitride-film 13 -side main surface 13 m at 13 measurement points P on group III-nitride-film 13 -side main surface 13 m shown in FIG.
  • group III nitride semiconductor devices manufactured with a high yield were those fabricated using a group III nitride composite substrate with a diameter of 75 mm (this value meets 75 mm or more) including a group III nitride film with a thickness of 110 ⁇ m (this value meets 10 ⁇ m or more and 250 ⁇ m or less), where mean value m S of the RMS of the support-substrate-side main surface was 2 nm (this value meets 0.3 nm or more and 20 nm or less), the ratio s S /m S of standard deviation s S of the RMS to mean value m S of the RMS of the support-substrate-side main surface was 0.12 (this value meets 0.005 or more and 0.4 or less), mean value m III-N of the RMS of the group III-nitride-film-side main surface was 0.15 nm or more and 3 nm or less, and the ratio s III-N /m III-N of standard
  • group III nitride composite substrates 1 were fabricated in a similar manner to Reference Example II-A, except that: an Al 2 O 3 —SiO 2 composite oxide substrate, a mullite substrate (with respect to the whole substrate, Al 2 O 3 was 60% by mole and SiO 2 was 40% by mole), and a mullite-YSZ substrate (with respect to the whole substrate, mullite was 70% by mass and YSZ was 30% by mass, with respect to mullite, Al 2 O 3 was 60% by mole and SiO 2 was 40% by mole and, with respect to YSZ, ZrO 2 was 90% by mole and Y 2 O 3 was 10% by mole) were each used as support substrate 11 ; a semi-insulating GaN substrate doped with Fe (iron) atoms and having an electrical resistance (also referred to as specific resistance) of 2 ⁇ 10 5 ⁇ cm was used as group III nitride film donor substrate 13 D, the group III nitride film donor substrate
  • a source electrode 60 and a drain electrode 70 were fabricated by photolithography, EB deposition, and lift-off.
  • a Ti layer having a thickness of 20 nm, an Al layer having a thickness of 100 nm, a Ti layer having a thickness of 20 nm, and an Au layer having a thickness of 300 nm were successively formed, lifted off, and annealed for 1 minute at 600° C. into an alloy.
  • a gate electrode 80 was formed.
  • an Ni layer having a thickness of 50 nm and an Au layer having a thickness of 500 nm were successively formed.
  • the gate length was set to 2 ⁇ m.
  • GaN layer 26 and Al 0.2 Ga 0.8 N layer 27 were formed as at least one group III nitride layer 20 on group III nitride film 13 of group III nitride composite substrate 1 , and source electrode 60 , drain electrode 70 , and gate electrode 80 were disposed on Al 0.2 Ga 0.8 N layer 27 so that the electrodes were separated from each other and gate electrode 80 was located between source electrode 60 and drain electrode 70 .
  • mean value m S of the RMS of support-substrate 11 -side main surface 11 n and the ratio s S /m S of standard deviation s S of the RMS to mean value m S of the RMS of support-substrate 11 -side main surface 11 n were calculated and summarized in Table 17.
  • thermal expansion coefficient ⁇ S of support substrate 11 and thermal expansion coefficient ⁇ III-N of group III nitride film 13 were measured with a thermomechanical analysis apparatus, the ratio ⁇ III-N / ⁇ S of thermal expansion coefficient ⁇ III-N of the group III nitride film to thermal expansion coefficient ⁇ S of the support substrate was calculated, and the results were summarized in Table 17. Further, thickness t S of support substrate 11 and thickness t III-N of group III nitride film 13 were measured with a digital indicator, the ratio t III-N /t S of thickness t III-N of group III nitride film 13 to thickness t S of support substrate 11 was calculated, and the results were summarized in Table 17.
  • group III nitride semiconductor devices 4 were also calculated. Specifically, HEMTs which were group III nitride semiconductor devices 4 were classified into non-defective devices meeting a standard that the leakage gate current density was 1 ⁇ 10 ⁇ 6 A/cm 2 or less when being applied with a gate voltage of 5 V, and defective devices failing to meet this standard, and the percentage of the ratio determined by dividing the non-defective devices by the sum of the non-defective devices and the defective devices was defined as a yield.
  • group III nitride semiconductor devices fabricated with a high yield were those using group III nitride composite substrate 1 in which, regardless of whether the Al 2 O 3 —SiO 2 composite oxide substrate, the mullite substrate, or the mullite-YSZ substrate was used as support substrate 11 , the thickness of the group III nitride film of the composite substrate was 110 ⁇ m (this value meets 10 ⁇ m to 250 ⁇ m), the diameter of the composite substrate was 75 mm to 150 mm, mean value m S of the RMS of the support-substrate-side main surface was 1.5 nm (this value meets 0.3 nm or more and 20 nm or less), and the ratio s S /m S of standard deviation s S of the RMS to mean value m S of the RMS of the support-substrate-side main surface was 0.1 (this value meets 0.005 or more and 4.0 or less).
  • Group III nitride semiconductor devices fabricated with a high yield were also those in which the ratio ⁇ III-N / ⁇ S of thermal expansion coefficient ⁇ III-N of group III nitride film 13 to thermal expansion coefficient as of support substrate 11 was 0.75 or more and 1.25 or less, and the ratio t III-N /t S of thickness of the group III nitride film to thickness t S of support substrate 11 was 0.02 or more and 1 or less.
  • group III nitride composite substrate 1 was fabricated in a similar manner to Reference Example II-A, except that: an Al 2 O 3 —SiO 2 composite oxide substrate (with respect to the whole substrate, Al 2 O 3 was 88% by mass and SiO 2 was 12% by mass) was used as support substrate 11 ; support substrate 11 was subjected to grinding and finish polishing under the condition that action coefficient FE was 5.9 ⁇ 10 ⁇ 17 m 2 /s to thereby have a thickness of 250 ⁇ m; group III nitride composite substrates 1 were fabricated with different diameters in a range of 75 mm to 150 mm; and obtained group III nitride composite substrate 1 was further cleaned.
  • an Al 2 O 3 —SiO 2 composite oxide substrate (with respect to the whole substrate, Al 2 O 3 was 88% by mass and SiO 2 was 12% by mass) was used as support substrate 11 ; support substrate 11 was subjected to grinding and finish polishing under the condition that action coefficient FE was 5.9 ⁇ 10 ⁇ 17 m
  • support substrate 11 had a thermal conductivity of 15 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 and a Young's modulus of 270 GPa.
  • cleaning method a combination of scrub cleaning with a surfactant and pure water, two-fluid cleaning with hydrochloric acid or TMAH (tetramethylammonium hydroxide) and pure water, and megasonic cleaning with hydrochloric acid or TMAH and pure water was used.
  • TMAH tetramethylammonium hydroxide
  • an SBD was fabricated as group III nitride semiconductor device 4 .
  • the MOVPE method was used to epitaxially grow n + -GaN layer 28 (having a carrier concentration of 2 ⁇ 10 18 cm ⁇ 3 ) with a thickness of 2 ⁇ m and n ⁇ -GaN layer 29 (having a carrier concentration of 5 ⁇ 10 15 cm ⁇ 3 ) with a thickness of 7 ⁇ m in this order to form group III nitride layer 20 , and accordingly a laminated group III nitride composite substrate was obtained.
  • first electrode 30 serving as a Schottky electrode.
  • the diameter of the electrode was set to 200 ⁇ m.
  • a Ti layer having a thickness of 200 nm, a Pt layer having a thickness of 100 nm, and an Au layer having a thickness of 1000 nm were successively formed by the EB deposition method to thereby form a pad electrode (not shown).
  • the support substrate and the joint film were removed by grinding.
  • a vitrified grinding wheel containing diamond abrasive grains having an average grain size of 40 ⁇ m to 50 ⁇ m was used.
  • group III nitride semiconductor device 4 serving as an SBD was obtained.
  • the yield of group III nitride semiconductor devices 4 was also calculated. Specifically, for SBDs which were group III nitride semiconductor devices 4 , current-voltage characteristics in the reverse direction were measured. The SBDs were classified into non-defective devices meeting a standard that the breakdown voltage of the SBD was 300 V or more and defective devices failing to meet this standard, and the percentage of the ratio determined by dividing the non-defective devices by the sum of the non-defective devices and the defective devices was defined as a yield. The yield of the group III nitride semiconductor devices is summarized in Table 18.
  • group III nitride semiconductor devices fabricated with a high yield were those using a group III nitride composite substrate with a diameter of 75 mm (this value meets 75 mm or more) including a group III nitride film with a thickness of 110 where the concentration of impurity metal atoms in the group III-nitride-film-side main surface was 3 ⁇ 10 12 atoms/cm 2 or less.
  • group III nitride composite substrate 1 and group III nitride semiconductor device 4 were fabricated in a similar manner to Reference Example II-A except that: a substrate having a diameter of 75 mm and a thermal conductivity between 2 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 and 300 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 was used as support substrate 11 ; grinding and polishing were performed from main surface 13 m opposite to the bonded main surface of group III nitride film donor substrate 13 D with a diameter of 75 mm to thereby allow group III nitride film 13 to have a thickness of 110 ⁇ m; and support-substrate 11 -side main surface 11 n was finish-polished under the condition that action coefficient FE was 9.0 ⁇ 10 ⁇ 17 m 2 /s.
  • vitrified abrasive grains including diamond abrasive grains having an average grain size of 25 ⁇ m to 35 ⁇ m were used.
  • the thermal conductivity of support substrate 11 was obtained by adjusting the oxide material content and the sintering conditions.
  • group III nitride semiconductor devices fabricated with a high yield were those using a group III nitride composite substrate with a diameter of 75 mm (this value meets 75 mm or more) including a group III nitride film with a thickness of 110 ⁇ m (this value meets 10 ⁇ m or more and 250 ⁇ m or less) and including a support substrate having a thermal conductivity of 3 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or more and 280 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or less.
  • an Al 2 O 3 —SiO 2 composite oxide substrate (with respect to the whole substrate, Al 2 O 3 was 85% by mass and SiO 2 was 15% by mass) having a diameter of 75 mm and a thickness of 300 ⁇ m was prepared for use as support substrate 11 .
  • Support substrate 11 had a thermal conductivity of 10 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 and a Young's modulus of 250 GPa.
  • main surfaces 11 m , 11 n of the two opposite sides respectively of support substrate 11 were subjected to rough polishing with a copper-based surface plate, intermediate polishing with a tin-based surface plate, and finish polishing with a nonwoven polishing pad, for which a diamond slurry was used as an abrasive.
  • the finish polishing was performed under the condition that action coefficient FE was 4 ⁇ 10 ⁇ 17 m 2 /s or more and 1 ⁇ 10 ⁇ 16 m 2 /s or less.
  • an SiO 2 film of 800 nm in thickness was grown by the PE-CVD (Plasma Enhanced-Chemical Vapor Deposition) method, and annealed in a nitrogen atmosphere at 800° C. for an hour.
  • PE-CVD Pulsma Enhanced-Chemical Vapor Deposition
  • CMP using a slurry with a pH of 10 containing colloidal silica abrasive grains having an average grain size of 40 nm was performed to thereby form joint film 12 a of 400 nm in thickness having its main surface 12 am mirror-finished so that the RMS (root mean square roughness) was 0.3 nm or less.
  • non-abrasive polishing cleaning with a KOH aqueous solution, polishing cleaning with pure water, and megasonic cleaning (cleaning with ultrasonic waves in a megasonic frequency range of 500 kHz to 5 MHz) with pure water were performed.
  • a GaN crystal body having a diameter of 75 mm and a thickness of 8 mm was prepared for use as group III nitride film donor substrate 13 D.
  • a surface-to-be-bonded of group III nitride film donor substrate 13 D was subjected to mechanical polishing and CMP so that it was planarized to have an RMS of 2 nm or less.
  • An SiO 2 film of 800 nm in thickness was grown thereon by the PE-CVD method, and annealing was performed in a nitrogen atmosphere at 800° C. for an hour.
  • CMP using a slurry with a pH of 10 containing colloidal silica abrasive grains having an average grain size of 40 nm was performed to thereby form joint film 12 b of 500 nm in thickness having its main surface 12 bn mirror-finished so that the RMS was 0.3 nm or less.
  • non-abrasive polishing cleaning with a KOH aqueous solution, polishing cleaning with pure water, and megasonic cleaning with pure water were performed.
  • group III nitride film donor substrate 13 D was produced through growth by the HVPE method using a GaAs substrate as a base substrate.
  • Group III nitride film donor substrate 13 D had its electrical conductivity of n-type, its dislocation density of 1 ⁇ 10 8 cm ⁇ 2 , and its carrier concentration of 1 ⁇ 10 17 cm ⁇ 3 .
  • joint substrate 1 L in which support substrate 11 and group III nitride film 13 were bonded to each other with joint film 12 interposed therebetween.
  • joined substrate 1 L was annealed by being heated in a nitrogen gas atmosphere to 800° C., to thereby increase the joint strength.
  • group III nitride film donor substrate 13 D in joined substrate 1 L was cut, with a wire saw, along a plane located inwardly at a depth of 40 ⁇ m from the bonded surface where group III nitride film donor substrate 13 D was bonded to joint film 12 , to thereby produce group III nitride composite substrate 1 in which support substrate 11 and group III nitride film 13 which was a GaN thin film were bonded together with joint film 12 interposed therebetween.
  • the wire As the wire, a fixed-abrasive wire with a diameter of 180 ⁇ m on which diamond abrasive grains were electrodeposited was used.
  • the cutting method in order to reduce the cut resistance and enhance the thickness precision and the flatness of the cut plane, the method was used that caused the wire to swing and caused group III nitride film donor substrate 13 D to vibrate in synchronization therewith.
  • the resistance coefficient for cutting with the wire saw was set to 4200 N.
  • group III nitride film 13 of group III nitride composite substrate 1 was subjected to mechanical polishing and CMP.
  • a diamond slurry was used as an abrasive, and rough polishing with a copper-based surface plate and intermediate polishing with a tin-based surface plate were performed.
  • a colloidal silica slurry with pH 11 (a slurry of pH 11 containing colloidal silica abrasive grains having an average grain size of 60 nm) was used to perform finish polishing with a nonwoven polishing pad.
  • the composite substrate was mounted on the apparatus for the CMP, by a method according to which the shape of the substrate was corrected in advance by vacuum chuck suction, and thereafter the composite substrate was suction-fixed onto the apparatus.
  • the finish polishing was performed under the condition that action coefficient FE was 7 ⁇ 10 ⁇ 14 m 2 /s.
  • the thickness of finish-polished group III nitride film 13 was 110 ⁇ m.
  • SBD Schottky Barrier Diode
  • the MOVPE method was used to epitaxially grow n-GaN layer 28 (having a carrier concentration of 2 ⁇ 10 18 cm ⁇ 3 ) with a thickness of 2 ⁇ m and n ⁇ -GaN layer 29 (having a carrier concentration of 5 ⁇ 10 15 cm ⁇ 3 ) with a thickness of 7 ⁇ m in this order to form group III nitride layer 20 , and accordingly laminated group III nitride composite substrate 2 was obtained.
  • first electrode 30 serving as a Schottky electrode.
  • the diameter of first electrode 30 was set to 200 ⁇ m.
  • first electrode 30 a Ti layer having a thickness of 200 nm, a Pt layer having a thickness of 100 nm, and an Au layer having a thickness of 1000 nm were successively formed by the EB deposition method to thereby form a pad electrode 33 .
  • an Mo substrate was prepared.
  • a Ti layer having a thickness of 200 nm, a Pt layer having a thickness of 100 nm, and an Au layer having a thickness of 1000 nm were successively formed by the EB deposition method to thereby form pad electrode 43 .
  • an AuSn solder film was formed as joint metal film 44 .
  • a Ti layer having a thickness of 20 nm, an Al layer having a thickness of 200 nm, and an Au layer having a thickness of 300 nm were successively formed by the EB deposition method, and then annealed to form second electrode 50 which was an ohmic electrode.
  • a Ti layer having a thickness of 20 nm and an Au layer having a thickness of 300 nm were successively formed by the EB deposition method, and annealed to thereby form device support substrate electrode 45 . In this way, group III nitride semiconductor device 4 which was an SBD was obtained.
  • the yield of group III nitride semiconductor devices 4 thus obtained was calculated in the following way. Specifically, for SBDs, current-voltage characteristics in the reverse direction were measured. The SBDs were classified into non-defective devices meeting a standard that the breakdown voltage was 250 V or more and defective devices failing to meet this standard, and the percentage of the ratio determined by dividing the non-defective devices by the sum of the non-defective devices and the defective devices was defined as a yield.
  • group III nitride composite substrates each including the joint film having a thickness variation shown in Table 20, and group III nitride semiconductor devices for which the composite substrates were used were fabricated.
  • group III nitride composite substrates were each a composite substrate having a diameter of 75 mm (namely 75 mm or more) in which a support substrate and a group III nitride film having a thickness of 110 ⁇ m (namely 10 ⁇ m or more and 250 ⁇ m or less) were bonded to each other.
  • the yield of the semiconductor devices (III-A2 to III-A6) in which group III nitride composite substrates each having a thickness variation of the joint film of 2% or more and 40% or less were used was higher than that of the semiconductor devices (III-A1 and III-A7) in which group III nitride composite substrates failing to satisfy this condition were used.
  • group III nitride composite substrates each including a support substrate and a group III nitride film joined to each other with the shear joint strength and the ratio of the joint area shown in Table 21, and group III nitride semiconductor devices for which these composite substrates were used were fabricated.
  • group III nitride composite substrates were each a composite substrate having a diameter of 75 mm (namely 75 mm or more) in which a support substrate and a group III nitride film having a thickness of 110 ⁇ m (namely 10 ⁇ m or more and 250 ⁇ m or less) were bonded to each other.
  • the yield of the semiconductor devices (III-B2 to III-B5, III-B7, and III-B8) in which used group III nitride composite substrates each having a shear joint strength between the support substrate and the group III nitride film of 4 MPa or more and 40 MPa or less and a ratio of the joint area between the support substrate and the group III nitride film of 60% or more and 99% or less was higher than that of the semiconductor devices (III-B1, III-B6, and III-B9) in which group III nitride composite substrates failing to satisfy this condition were used.
  • joint film 12 was grown by the AP-CVD (Atmospheric Pressure-Chemical Vapor Deposition) method;
  • support-substrate 11 -side main surface 11 n was finish-polished under the condition that action coefficient FE was 8.5 ⁇ 10 ⁇ 17 n 2 /s or more and 1 ⁇ 10 ⁇ 16 m 2 /s or less;
  • the thickness variations of the joint films in group III nitride composite substrates in Reference Example III-C were all 5% (namely 2% or more and 40% or less).
  • ⁇ III-N / ⁇ S represents the ratio of thermal expansion coefficient ⁇ III-N of the group III nitride film to thermal expansion coefficient ⁇ S of the support substrate
  • t III-N /t S represents the ratio of thickness of the group III nitride film to thickness t S of the support substrate.
  • group III nitride composite substrates having a diameter of 75 mm or more and including the support substrate and the group III nitride film with a thickness of 10 ⁇ m or more and 250 ⁇ m or less that were bonded to each other, where the joint film had a thickness variation of 5% (namely 2% or more and 40% or less) group III nitride composite substrates having t III-N /t S of 0.02 or more and 1 or less could be used to manufacture group III nitride semiconductor devices with a particularly high yield.
  • thermal conductivity ⁇ S of the support substrate The relation between thermal conductivity ⁇ S of the support substrate and the yield of group III nitride semiconductor devices is shown in Table 23.
  • group III nitride composite substrates having a thermal conductivity ⁇ S of 3 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or more and 280 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 or less could be used to manufacture group III nitride semiconductor devices with a particularly high yield.

Abstract

Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 μm or more. A sheet resistance of a group III-nitride-film-side main surface is 200 Ω/sq or less.

Description

    TECHNICAL FIELD
  • The present invention relates to a group III nitride composite substrate and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate.
    • BACKGROUND ART
  • Group III nitride semiconductors such as GaN, AlN, AlxGa1-xN (0<x<1), and the like have superior semiconductor properties and are therefore suitable for a substrate of a semiconductor device. Such group III nitride semiconductors are expensive. Therefore, in order to reduce the cost of manufacturing a semiconductor device, there has been proposed a substrate of a semiconductor device, specifically a semiconductor substrate in which a film of a group III nitride semiconductor such as GaN, AlN, or the like is formed on a support substrate such as silicon substrate.
  • For example, Japanese Patent Laying-Open No. 2006-210660 (PTD 1) discloses a method for manufacturing a semiconductor substrate including the steps of: implanting ions into a front surface and its vicinity of a first nitride semiconductor substrate made from GaN, AlN, or the like; superposing a second substrate on the front surface of the first nitride semiconductor substrate; heat-treating the two substrates superposed on each other; and stripping most of the first nitride semiconductor substrate from the second substrate along a layer in which the ions are implanted.
    • CITATION LIST Patent Document PTD 1: Japanese Patent Laying-Open No. 2006-210660 SUMMARY OF INVENTION Technical Problem
  • In a semiconductor substrate produced by the method for manufacturing a semiconductor substrate disclosed in Japanese Patent Laying-Open No. 2006-210660 (PTD 1), the thickness of the nitride semiconductor formed on the support substrate is a thin thickness on the order of 2 μm, and thus the semiconductor substrate suffers from a problem of a high sheet resistance of the substrate, and a problem of a low yield because the substrate is partially of an increased resistance due to damage caused by the ion implantation.
  • The present invention aims to solve the above problems and provide a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate.
    • Solution to Problem
  • According to an aspect of the present invention, a group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. Here, the group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 μm or more. A sheet resistance of a group III-nitride-film-side main surface of the group III nitride composite substrate is 200 Ω/sq (ohms per square) or less. In this group III nitride composite substrate, the thickness of the group III nitride film is 10 μm or more, and therefore, the sheet resistance of the group III-nitride-film-side main surface of the group III nitride composite substrate can be reduced to 200 Ω/sq or less, and group III nitride semiconductor devices can thus be manufactured with a high yield.
  • In the group III nitride composite substrate according to the above aspect of the present invention, an area of a joined region joining the group III nitride film and the support substrate is 70% or more relative to an area of the main surface, a non-joined region failing to join the group III nitride film and the support substrate includes at least one non-joined partial region, and the non-joined partial region may be a small non-joined partial region having a maximum size in radial direction of less than 20 mm. In this group III nitride composite substrate, the area of the joined region is a large area of 70% or more relative to the area of the main surface and the maximum size in radial direction of the non-joined partial region forming the non-joined region is a small size of less than 20 mm. Therefore, group III nitride semiconductor devices can be manufactured with a high yield.
  • In the group III nitride composite substrate according to the above aspect of the present invention, a non-joined region failing to join the group III nitride film and the support substrate includes at least one non-joined partial region, and the non-joined partial region may be an inner non-joined partial region failing to abut on a perimeter of the main surface. In this group III nitride composite substrate, the non-joined partial region forming the non-joined region does not abut on the perimeter of the main surface. Therefore, group III nitride semiconductor devices can be manufactured with a high yield.
  • In the group III nitride composite substrate according to the above aspect of the present invention, the group III nitride film has a main-surface through hole, and an area of the main-surface through hole may be 10% or less relative to an area of the main surface. In this group III nitride composite substrate, the area of the main-surface through hole is 10% or less relative to the area of the main surface. Therefore, group III nitride semiconductor devices can be manufactured with a high yield.
  • In the group III nitride composite substrate according to the above aspect of the present invention, a joint interface between the group III nitride film and the support substrate includes an impurity containing metal, and the concentration of the impurity may be 1×1010 cm−2 or more. In this group III nitride composite substrate, the concentration of the impurity containing metal in the joint interface is 1×1010 cm−2 or more. Therefore, group III nitride semiconductor devices with a high joint strength can be manufactured with a high yield.
  • In the group III nitride composite substrate according to the above aspect of the present invention, the group III nitride film may have a thermal expansion coefficient of more than 0.7 times and less than 1.4 times as large as a thermal expansion coefficient of the support substrate. In this group III nitride composite substrate, the thermal expansion coefficient of the group III nitride film is more than 0.7 times and less than 1.4 times as large as the thermal expansion coefficient of the support substrate. Therefore, in the step of applying heat during manufacture of a group III nitride semiconductor device, occurrence of warp and/or cracks is prevented, and accordingly group III nitride semiconductor devices can be manufactured with a high yield.
  • In the group III nitride composite substrate according to the above aspect of the present invention, the support substrate may have a fracture toughness of 1 MNm−2/3 or more, and the support substrate may have a thickness of 50 μm or more. In this group III nitride composite substrate, the mechanical strength is high. Therefore, group III nitride semiconductor devices can be manufactured with a high yield.
  • In the group III nitride composite substrate according to the above aspect of the present invention, the indirect manner may be a manner of interposing a joint film between the group III nitride film and the support substrate. In this group III nitride composite substrate, the group III nitride film and the support substrate are joined to each other with the joint film interposed therebetween. Therefore, group III nitride semiconductor devices having a high joint strength can be manufactured with a high yield.
  • A method for manufacturing a group III nitride composite substrate according to another aspect of the present invention is a method for manufacturing a group III nitride composite substrate of the above aspect, and includes the steps of: bonding the group III nitride film and the support substrate to each other in one of a direct manner and an indirect manner; and reducing the thickness of at least one of the group III nitride film and the support substrate bonded to each other. This method for manufacturing a group III nitride composite substrate includes these steps so that group III nitride composite substrates with a low sheet resistance can be manufactured with a high yield.
  • A method for manufacturing a group III nitride semiconductor device according to still another aspect of the present invention is a method for manufacturing a group III nitride semiconductor device using a group III nitride composite substrate of the above aspect, and includes the steps of: preparing the group III nitride composite substrate; and growing at least one group III nitride layer on the group III-nitride-film-side main surface of the group III nitride composite substrate. This method for manufacturing a group III nitride semiconductor device includes these steps so that group III nitride semiconductor devices can be manufactured with a high yield.
    • Advantageous Effects of Invention
  • In accordance with the present invention, a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate can be provided.
    • BRIEF DESCRIPTION OF DRAWINGS
  • FIG. 1 is a schematic cross-sectional view showing an example of the group III nitride composite substrate according to the present invention.
  • FIG. 2 is a schematic cross-sectional view showing another example of the group III nitride composite substrate according to the present invention.
  • FIG. 3 is a schematic plan view showing a joined region and non-joined regions in the group III nitride composite substrate according to the present invention.
  • FIG. 4 is a schematic cross-sectional view showing an example of the method for manufacturing a group III nitride composite substrate according to the present invention.
  • FIG. 5 is a schematic cross-sectional view showing an example of the group III nitride semiconductor device produced by the method for manufacturing a group III nitride semiconductor device according to the present invention.
  • FIG. 6 is a schematic cross-sectional view showing an example of the group III nitride composite substrate according to a reference invention.
  • FIG. 7 is a schematic plan view showing measurement points at which measurements of physical properties are taken in the group III nitride composite substrate.
  • FIG. 8 is a schematic cross-sectional view showing an example of a laminated group III nitride composite substrate according to the reference invention.
  • FIG. 9 is a schematic cross-sectional view showing an example of the group III nitride semiconductor device according to the reference invention.
  • FIG. 10 is a schematic cross-sectional view showing another example of the group III nitride semiconductor device according to the reference invention.
  • FIG. 11 is a schematic cross-sectional view showing still another example of the group III nitride semiconductor device according to the reference invention.
  • FIG. 12 is a schematic cross-sectional view showing an example of a method for manufacturing a group III nitride composite substrate according to the reference invention.
  • FIG. 13 is a schematic cross-sectional view showing another example of the method for manufacturing a group III nitride composite substrate according to the reference invention.
  • FIG. 14 is a schematic cross-sectional view showing still another example of the method for manufacturing a group III nitride composite substrate according to the reference invention.
  • FIG. 15 is a schematic cross-sectional view showing an example of the method for manufacturing a group III nitride semiconductor device according to the reference invention.
  • FIG. 16 is a schematic cross-sectional view showing another example of the method for manufacturing a group III nitride semiconductor device according to the reference invention.
  • FIG. 17 is a schematic cross-sectional view showing an example of the method for manufacturing a group III nitride composite substrate through the use of ion implantation.
    •  DESCRIPTION OF EMBODIMENTS First Embodiment Group III Nitride Composite Substrate
  • Referring to FIGS. 1 and 2, a group III nitride composite substrate 1 which is an embodiment of the present invention includes a group III nitride film 13 and a support substrate 11 formed from a material which is different in chemical composition from group III nitride film 13. Here, group III nitride film 13 is joined to support substrate 11 in one of a direct manner and an indirect manner. Group III nitride film 13 has a thickness of 10 μm or more. A sheet resistance of a group III-nitride-film 13-side main surface 13 m, which is a main surface on the group III-nitride-film side, is 200 Ω/sq or less.
  • In group III nitride composite substrate 1 of the present embodiment, group III nitride film 13 has a thickness of 10 μm or more, and therefore, the sheet resistance of group III-nitride-film 13-side main surface 13 m can be reduced to 200 Ω/sq or less. Thus, group III nitride semiconductor devices can be manufactured with a high yield. Details will be described in the following.
  • Group III nitride composite substrate 1 of the present embodiment includes group III nitride film 13, and support substrate 11 formed from a material different in chemical composition from group III nitride film 13.
  • <Group III Nitride Film>
  • Group III nitride film 13 is a substrate formed from a semiconductor which is a compound of at least one group III element and nitrogen, and the substrate may for example be GaN substrate, AlN substrate, AlxGa1-xN substrate (0<x<1), or the like. The method for manufacturing this group III nitride film 13 is not particularly limited. This method may be a gas phase method such as HVPE (Hydride Vapor Phase Epitaxy), sublimation method, or the like, may be a liquid phase method such as high nitrogen pressure solution method, flux method, or the like. In order to grow a group III nitride layer of high crystal quality on group III nitride film 13, group III nitride film 13 is preferably crystal, and more preferably single crystal.
  • In order to reduce the sheet resistance of group III nitride film 13, group III nitride film 13 may be doped with a conductivity improver impurity. This conductivity improver impurity is not particularly limited. O (oxygen) atom, Si (silicon) atom, and the like are suitable since they are highly effective in improving the conductivity.
  • <Support Substrate>
  • Support substrate 11 is a substrate supporting group III nitride film 13, and is not particularly limited as long as it is a substrate formed from a material which is different in chemical composition from group III nitride film 13. The support substrate may be an oxide substrate, and examples of the oxide substrate are: sapphire substrate and other Al2O3 substrates; mullite substrate and other Al2O3—SiO2-based substrates; spinel substrate and other Al2O3—MgO-based substrates; Al2O3—SiO2-YSZ (Yttria Stabilized Zirconia)-based substrate, and the like. The support substrate may also be a metal substrate such as Mo substrate, W substrate, Cu—W substrate, or the like. It may also be Si substrate, SiC substrate, graphite substrate, or the like. In addition, in the case where group III nitride film 13 is a GaN film, the support substrate may be a substrate formed from AlN for example which is a group III nitride different in chemical composition from GaN. Support substrate 11 may be either crystal or amorphous. In the case where support substrate 11 is crystal, it may be either single crystal or polycrystal.
  • <Manner of Joining Group III Nitride Film and Support Substrate>
  • In group III nitride composite substrate 1 of the present embodiment, group III nitride film 13 is joined to support substrate 11 in one of a direct manner and an indirect manner.
  • Referring to FIG. 1, the joint in a direct manner means that group III nitride film 13 and support substrate 11 are directly joined to each other without a separate element interposed therebetween. In the case of this direct joint manner, a joint interface 100 is an interface formed by a main surface 13 n of group III nitride film 13 and a main surface 11 m of support substrate 11 that are joined to each other.
  • Referring to FIG. 2, the joint in an indirect manner means that group III nitride film 13 and support substrate 11 are indirectly joined to each other with a separate element such as a joint film 12 for example interposed therebetween. In the case of this indirect joint manner, the joint interface varies depending on how the substrate and the film are bonded to each other as described below.
  • A first bonding method is as follows. As shown in FIGS. 2 and 4, a joint film 12 a is formed on main surface 11 m of support substrate 11 and a joint film 12 b is formed on main surface 13 n of group III nitride film 13. After this, a main surface 12 am of joint film 12 a and a main surface 12 bn of joint film 12 b are bonded to each other to thereby form joint film 12 into which joint film 12 a and joint film 12 b are integrated. In this case, joint interface 100 is a surface formed by main surface 12 am of joint film 12 a and main surface 12 bn of joint film 12 b that are joined to each other in joint film 12.
  • A second bonding method is as follows. Joint film 12 is formed on main surface 11 m of support substrate 11 and thereafter the main surface of joint film 12 and main surface 13 n of group III nitride film 13 are bonded to each other. In this case, joint interface 100 is a surface formed by the main surface of joint film 12 and main surface 13 n of group III nitride film 13 that are joined to each other.
  • A third bonding method is as follows. Joint film 12 is formed on main surface 13 n of group III nitride film 13, and thereafter the main surface of joint film 12 and main surface 11 m of support substrate 11 are bonded to each other. In this case, joint interface 100 is a surface formed by the main surface of joint film 12 and main surface 11 m of support substrate 11 that are joined to each other.
  • <Joint Film>
  • Joint film 12 which may be included between group III nitride film 13 and support substrate 11 in group III nitride composite substrate 1 of the present embodiment is not particularly limited as long as the joint film serves to increase the strength with which group III nitride film 13 and support substrate 11 are joined. The joint film may be SiO2 film, Si3N4 film, AlN film, Al2O3 film, TiO2 film, TiN film, Ga2O3 film, W film, Mo film, Au—Sn film, or the like.
  • The thickness of joint film 12 is not particularly limited. For the sake of increasing the strength with which group III nitride film 13 and support substrate 11 are joined to each other, the thickness is preferably 0.05 μm or more, and more preferably 0.1 μm or more. For the sake of improving the in-plane uniformity and the flatness of joint film 12, the thickness is preferably 5 μm or less, and more preferably 2 μm or less.
  • <Thickness of Group III Nitride Film>
  • Regarding group III nitride composite substrate 1 in the present embodiment, for the sake of reducing the sheet resistance of group III-nitride-film 13-side main surface 13 m of group III nitride composite substrate 1, the thickness of group III nitride film 13 needs to be 10 μm or more, and is preferably 50 μm or more, and more preferably 100 μm or more. For the sake of reducing the cost of group III nitride composite substrate 1, the thickness of group III nitride film 13 is preferably 500 μm or less, and more preferably 250 μm or less.
  • <Sheet Resistance of Group III-Nitride-Film-Side Main Surface>
  • Regarding group III nitride composite substrate 1 in the present embodiment, for the sake of improving device properties of a group III nitride semiconductor device (such as luminous efficiency of a light-emitting device, for example) that are achieved by reducing the sheet resistance of group III nitride composite substrate 1, the sheet resistance of group ill-nitride-film 13-side main surface 13 m of group III nitride composite substrate 1 needs to be 200 Ω/sq (ohms per square) or less, and is preferably 50 Ω/sq or less, and more preferably 10 Ω/sq or less.
  • <Joined Region Joining Group III Nitride Film and Support Substrate and Non-Joined Region Failing to Join Group III Nitride Film and Support Substrate>
  • Referring to FIGS. 1 to 3, in group III nitride composite substrate 1 of the present embodiment, group III nitride film 13 is bonded to support substrate 11 along the above-described joint interface 100. Like a group III nitride composite substrate produced by the ion implantation method, group III nitride composite substrate 1 in the present embodiment also has surface roughness of respective main surfaces of support substrate 11, group III nitride film 13, and joint films 12, 12 a, 12 b, a main-surface through hole 13 h of group III nitride film 13, non-uniformity of bonding, and the like. As a result, in group III nitride composite substrate 1 of the present embodiment, joint interface 100 includes a joined region 100 b where group III nitride film 13 and support substrate 11 are joined to each other in either the direct manner or the indirect manner, and a non-joined region 100 n where group III nitride film 13 and support substrate 11 are not joined to each other in either the direct manner or the indirect manner.
  • The presence, respective positions, respective sizes, and respective areas of joined region 100 b and non-joined region 100 n in joint interface 100 of group III nitride composite substrate 1 in the present embodiment can be measured by means of an ultrasonic microscope, a defect evaluation apparatus, or the like.
  • Non-joined region 100 n in joint interface 100 of group III nitride composite substrate 1 in the present embodiment includes at least one non-joined partial region 111 n, 112 n, 121 n, 122 n. Although the shape of non-joined partial regions 111 n, 112 n, 121 n, 122 n is indefinite, the shape is substantially circular or elliptical. Therefore, the size of the non-joined region is evaluated on the basis of the maximum size in radial direction (maximum diameter). Non-joined partial regions 111 n, 112 n, 121 n, 122 n can be classified by size into small non-joined partial regions 111 n, 112 n having a maximum size in radial direction of less than 20 mm, and large non-joined partial regions 121 n, 122 n having a maximum radial size of 20 mm or more. Non-joined partial regions 111 n, 112 n, 121 n, 122 n can also be classified, by the position where the region is located, into inner non-joined partial regions 111 n, 121 n which do not abut on a perimeter 1 r of a main surface 1 m, and outer non-joined partial regions 112 n, 122 n which abut on perimeter 1 r of main surface 1 m.
  • Regarding group III nitride composite substrate 1 in the present embodiment, in order to manufacture group III nitride semiconductor devices with a high yield, the area of joined region 100 b joining group III nitride film 13 and support substrate 11 relative to the area of main surface 1 m is preferably 70% or more, and more preferably 85% or more. If the area of joined region 100 b joining group III nitride film 13 and support substrate 11 relative to the area of main surface 1 m is less than 70%, group III nitride film 13 and support substrate 11 are more likely to be separated from each other during a process of manufacturing a group III nitride semiconductor device, which makes it difficult to increase the yield of group III nitride semiconductor devices.
  • Regarding group III nitride composite substrate 1 in the present embodiment, in order to manufacture group III nitride semiconductor devices with a high yield, the non-joined partial region is preferably small non-joined partial region 111 n, 112 n having a maximum size in radial direction of less than 20 mm. Namely, in FIG. 3, any non-joined partial region is preferably small non-joined partial region 111 n, 112 n.
  • Moreover, regarding group III nitride composite substrate 1 in the present embodiment, in order to manufacture group III nitride semiconductor devices with a high yield, the non-joined partial region is preferably inner non-joined partial region 111 n, 121 n which does not abut on perimeter 1 r of main surface 1 m. Namely, in FIG. 3, any non-joined partial region is preferably inner non-joined partial region 111 n, 121 n. In the case of group III nitride composite substrate 1 including outer non-joined partial region 112 n, 122 n, contaminants may enter joint interface 100 during a process of fabricating group III nitride composite substrate 1 and a process of manufacturing a group III nitride semiconductor device using group III nitride composite substrate 1, and the contaminants are difficult to remove by cleaning. In this case, the yield of group III nitride semiconductor devices is difficult to increase. In addition, group III nitride composite substrate 1 including outer non-joined partial region 112 n, 122 n is broken through treatment during the step of reducing the thickness of at least one of the bonded group III nitride film 13 and support substrate 11. In this case as well, the yield of group III nitride semiconductor devices is difficult to increase.
  • Regarding group III nitride composite substrate 1 in the present embodiment, in order to manufacture group III nitride semiconductor devices with a high yield, the non-joined partial region is more preferably small and inner non-joined partial region 111 n. Namely, in FIG. 3, any non-joined partial region is preferably small and inner non-joined partial region 111 n.
  • <Main-Surface Through Hole of Group III Nitride Film>
  • Referring to FIGS. 1 to 3, regarding group III nitride composite substrate 1 in the present embodiment, in order to manufacture group III nitride semiconductor devices with a high yield, the area of main-surface through hole 13 h of group III nitride film 13 relative to the area of main surface 1 m, 13 m is preferably 10% or less, and more preferably 5% or less. Here, main-surface through hole 13 h is a hole extending through group III nitride film 13 between its main surface which is directly or indirectly joined to support substrate 11 and the other surface (specifically another main surface and side surface).
  • The presence of main-surface through hole 13 h of group III nitride film 13 in group III nitride composite substrate 1 causes non-joined region 100 n to be formed on main-surface through hole 13 h and its nearby region. When a group III nitride semiconductor device is cleaned in the process of manufacturing the group III nitride semiconductor device, a cleaning agent may enter the joint interface through main-surface through hole 13 h to thereby cause reduction of the joint strength of group III nitride composite substrate 1. If the area of main-surface through hole 13 h relative to the area of main surface 1 m is 10% or more, the area of non-joined region 100 n is accordingly larger, resulting in the difficulty in increasing the yield of group III nitride semiconductor devices.
  • <Impurity Containing Metal in Joint Interface>
  • Referring to FIGS. 1 to 3, regarding group III nitride composite substrate 1 in the present embodiment, in order to manufacture group III nitride semiconductor devices with a high yield by increasing the joint strength, the concentration of an impurity containing metal that is included in joint interface 100 between group III nitride film 13 and support substrate 11 is preferably 1×1010 cm−2 or more, and more preferably 1.5×1010 cm−2 or more. The impurity containing metal is not particularly limited. In order to increase the joint strength, the impurity is preferably an oxide of a base metal such as Fe (iron), Ni (nickel), or the like which has a higher ionization tendency and more easily oxidizes than H (hydrogen), in the case where group III nitride composite substrate 1 includes, as joint film 12, an oxide film such as SiO2 film.
  • <Thermal Expansion Coefficient of Group III Nitride Film and Thermal Expansion Coefficient of Support Substrate>
  • Referring to FIGS. 1 to 3, regarding group III nitride composite substrate 1 in the present embodiment, in order to suppress occurrence of warp and/or cracks during manufacture of a group III nitride semiconductor device and thereby manufacture group III nitride semiconductor devices with a high yield, group III nitride film 13 has a thermal expansion coefficient of preferably more than 0.7 times and less than 1.4 times, and more preferably 0.75 times or more and 1.25 times or less as large as a thermal expansion coefficient of support substrate 11.
  • <Fracture Toughness and Thickness of Support Substrate>
  • Referring to FIGS. 1 to 3, regarding group III nitride composite substrate 1 in the present embodiment, in order to suppress occurrence of warp and/or cracks during manufacture of a group III nitride semiconductor device, the support substrate has a fracture toughness of preferably 1 MNm−2/3 or more, and more preferably 1.5 MNm−2/3 or more. In addition, the support substrate has a thickness of preferably 50 μm or more, and more preferably 100 μm or more.
    • Second Embodiment Method for Manufacturing Group III Nitride Composite Substrate
  • Referring to FIGS. 1, 2, and 4, a method for manufacturing group III nitride composite substrate 1 which is another embodiment of the present invention is a method for manufacturing group III nitride composite substrate 1 in the first embodiment, and includes the steps of: bonding group III nitride film 13 and support substrate 11 to each other in one of a direct manner and an indirect manner (FIG. 4 (A)); and reducing the thickness of at least one of group III nitride film 13 and support substrate 11 (FIG. 4 (B)). The method for manufacturing group III nitride composite substrate 1 in the present embodiment can include the steps above to thereby manufacture group III nitride composite substrates of a low sheet resistance with a high yield.
  • <Step of Bonding Group III Nitride Film and Support Substrate>
  • Referring to FIGS. 1, 2, and 4, the method for manufacturing group III nitride composite substrate 1 in the present embodiment includes the step of firstly bonding group III nitride film 13 and support substrate 11 to each other in one of a direct manner and an indirect manner. Here, bonding group III nitride film 13 and support substrate 11 to each other in a direct manner means that group III nitride film 13 and support substrate 11 are directly bonded to each other without a separate element interposed therebetween. Bonding group III nitride film 13 and support substrate 11 to each other in an indirect manner means that group III nitride film 13 and support substrate 11 are indirectly bonded to each other with a separate element such as joint film 12 interposed therebetween.
  • The method for bonding group III nitride film 13 and support substrate 11 to each other is not particularly limited regardless of whether they are bonded in the direct manner or the indirect manner. Suitable methods include: a direct bonding method according to which respective surfaces to be bonded to each other are cleaned, bonded together as they are, and thereafter heated to approximately 600° C. to 1200° C. so that they are joined together; a surface activated bonding method according to which the surfaces to be bonded to each other are cleaned, subjected to an activation treatment by means of plasma or ions, and thereafter joined together in a low-temperature atmosphere of room temperature (25° C. for example) to 400° C.; a high-pressure bonding method according to which the surfaces to be bonded to each other are cleaned with a chemical solution and pure water and thereafter subjected to a high pressure on the order of 0.1 MPa to 10 MPa so that they are joined together; a high vacuum bonding method according to which the surfaces to be bonded to each other are cleaned with a chemical solution and pure water, and thereafter joined together in a high vacuum atmosphere on the order of 10−6 Pa to 10−3 Pa, and the like. Any of the above-referenced bonding methods can increase the temperature to approximately 600° C. to 1200° C. after they are joined together to thereby further increase the joint strength. In particular, the surface activated bonding method, the high pressure bonding method, and the high vacuum bonding method exhibit a higher effect of increasing the joint strength through the heating to approximately 600° C. to 1200° C. after they are joined together.
  • While group III nitride film 13 and support substrate 11 may be bonded to each other in either the direct manner or the indirect manner as described above, in order to increase the joint strength, group III nitride film 13 and support substrate 11 are preferably bonded to each other in an indirect manner with joint film 12 interposed therebetween as shown in FIG. 4 (A). Details will be described below.
  • Referring to FIG. 4 (A), the step of bonding group III nitride film 13 and support substrate 11 to each other in an indirect manner with joint film 12 interposed therebetween includes: the sub step of forming joint film 12 a on main surface 11 m of support substrate 11 (FIG. 4 (A1)); the sub step of forming joint film 12 b on main surface 13 n of group III nitride film 13 (FIG. 4 (A2)); and the sub step of bonding joint film 12 a formed on main surface 11 m of support substrate 11 and joint film 12 b formed on main surface 13 n of group III nitride film 13 to each other (FIG. 4 (A3)). These sub steps are performed to join and thereby integrate joint film 12 a and joint film 12 b bonded to each other into joint film 12, and support substrate 11 and group III nitride film 13 are joined to each other with joint film 12 interposed therebetween.
  • As to the method for manufacturing group III nitride composite substrate 1 in the present embodiment as well, due to the presence of surface roughness of respective main surfaces of support substrate 11, group III nitride film 13, and joint films 12, 12 a, 12 b, main-surface through hole 13 h of group III nitride film 13, non-uniformity of bonding, and the like, there are formed, in joint interface 100, joined region 100 b where group III nitride film 13 and support substrate 11 are joined to each other in either the direct manner or the indirect manner, and non-joined region 100 n where group III nitride film 13 and support substrate 11 are not joined to each other in either the direct manner or the indirect manner. The description of joined region 100 b and non-joined region 100 n is given above.
  • The method for forming joint films 12 a, 12 b is not particularly limited. In order to reduce the cost of forming the joint film, it is preferable to perform sputtering, vapor deposition, CVD (Chemical Vapor Deposition), or the like. The method for bonding support substrate 11 and group III nitride film 13 to each other by bonding joint film 12 a and joint film 12 b to each other is not particularly limited, and preferred methods are direct bonding method, surface activated bonding method, high-pressure bonding method, high vacuum bonding method, and the like as described above.
  • <Step of Reducing Thickness of at Least One of Group III Nitride Film and Support Substrate>
  • Referring to FIG. 4 (B), the method for manufacturing group III nitride composite substrate 1 in the present embodiment includes the step of subsequently reducing the thickness of at least one of group III nitride film 13 and support substrate 11 bonded to each other. Here, the method for reducing the thickness of at least one of group III nitride film 13 and support substrate 11 is not particularly limited, and may for example be the method according to which the substrate whose thickness is to be reduced is cut in parallel with the main surface, the method according to which the main surface of the substrate whose thickness is to be reduced is ground and/or polished, the method according to which the main surface of the substrate whose thickness is to be reduced is etched, the method by means of a laser, or the like. The method by means of a laser is a method according to which a laser beam is applied so that the focus of the laser beam is located at a predetermined depth from the main surface of the substrate. In the case of the method by means of a laser, the chemical composition of the region of the position at a predetermined depth from the main surface of the substrate where the laser beam is focused is changed, and accordingly the substrate can be divided at this region. Since the method by means of a laser changes the chemical composition of a region of a position at a predetermined depth from the main surface of the substrate and does not change the chemical composition of the region other than the above-referenced region, femtosecond laser, picosecond laser, or the like is preferably used.
    • Third Embodiment Method for Manufacturing Group III Nitride Semiconductor Device
  • Referring to FIG. 5, a method for manufacturing a group III nitride semiconductor device 4 which is still another embodiment of the present invention includes the steps of: preparing group III nitride composite substrate 1; and growing at least one group III nitride layer 20 on group III-nitride-film 13-side main surface 13 m of group III nitride composite substrate 1. The method for manufacturing group III nitride semiconductor device 4 in the present embodiment can include the above steps to thereby manufacture group III nitride semiconductor devices with a high yield.
  • <Step of Preparing Group III Nitride Composite Substrate>
  • The method for manufacturing group III nitride semiconductor device 4 in the present embodiment includes the step of firstly preparing group III nitride composite substrate 1. This step of preparing group III nitride composite substrate 1 is similar to the steps in the method for manufacturing group III nitride composite substrate 1 in the second embodiment.
  • <Step of Growing Group III Nitride Layer>
  • The method for manufacturing group III nitride semiconductor device 4 in the present embodiment includes the step of subsequently growing at least one group III nitride layer 20 on group III-nitride-film 13-side main surface 13 m of group III nitride composite substrate 1.
  • The method for growing group III nitride layer 20 is not particularly limited. In order to grow group III nitride layer 20 of high crystal quality, preferred methods include vapor phase methods such as MOCVD (Metal Organic Chemical Vapor Deposition), MBE (Molecular Beam Epitaxy), HVPE (Hydride Vapor Phase Epitaxy), sublimation method, and the like, and liquid phase methods such as high nitrogen pressure solution method, flux method, and the like.
  • The structure of group III nitride layer 20 to be grown varies depending on the type and the function of the group III nitride semiconductor device. In the case where group III nitride semiconductor device 4 is a light-emitting device, group III nitride layer 20 may be formed on group III-nitride-film 13-side main surface 13 m of group III nitride composite substrate 1 by growing a first-conductivity-type GaN layer 201, a first-conductivity-type AlsGa1-sN layer 202 (here, s meets 0<s<1), a light-emitting layer 203, a second-conductivity-type AltGa1-tN layer 204 (here, t meets 0<t<1), and a second-conductivity-type GaN layer 205, in this order.
  • The method for manufacturing group III nitride semiconductor device 4 in the present embodiment may include the step of subsequently forming electrodes (a first electrode and a second electrode). In group III nitride layer 20, second-conductivity-type GaN layer 204, light-emitting layer 203, first-conductivity-type AlsGa1-sN layer 202, and first-conductivity-type GaN layer 201 may each be partially removed by mesa etching to expose a part of first-conductivity-type GaN layer 201. On the exposed main surface of first-conductivity-type GaN layer 201, first electrode 31 may be formed. On the exposed main surface of the second-conductivity-type GaN layer, second electrode 32 may be formed. The method for forming first electrode 31 and second electrode 32 is not particularly limited, and may be CVD (Chemical Vapor Deposition), sputtering, vapor deposition, or the like.
  • Some reference inventions for the sake of reference for the prevent invention, namely Reference Invention I, Reference Invention II, and Reference Invention III will be described in the following.
    • Reference Invention I
  • Reference Invention I relates to a low-cost and large-diameter group III nitride composite substrate including a group III nitride film having a large thickness, a small thickness variation, and a high crystal quality, a method for manufacturing the group III nitride composite substrate, a laminated group III nitride composite substrate, and a group III nitride semiconductor device and a method for manufacturing the same.
  • [Background Art Regarding Reference Invention I]
  • Group III nitrides such as GaN have superior semiconductor properties and are therefore used as materials suitable for semiconductor devices.
  • For example, Japanese Patent Laying-Open No. 2009-126722 discloses a free-standing group III nitride substrate to be used as a substrate for a semiconductor device. The free-standing group III nitride substrate has a diameter of 25 mm or more and 160 mm or less and a thickness of 100 μm or more and 1000 μm or less. It discloses, as a specific example thereof, a free-standing GaN substrate having a diameter of 100 mm and a thickness of 400 μm.
  • Japanese Patent Laying-Open No. 2008-010766 discloses a GaN-thin-film-bonded substrate to be used as a substrate for manufacturing a semiconductor device. The GaN-thin-film-bonded substrate includes a heterogeneous substrate whose chemical composition is different from that of GaN, and a GaN thin film having a thickness of 0.1 μm or more and 100 μm or less and bonded to the heterogeneous substrate. It discloses, as a specific example thereof, a GaN-thin-film-bonded substrate having a diameter of 50.8 mm and including a sapphire substrate and a GaN thin film having a thickness of 0.1 μm or 100 μm and bonded to the sapphire substrate.
  • Japanese Patent Laying-Open No. 2010-182936 discloses a composite substrate to be used as a substrate for a semiconductor device. The composite substrate includes a support substrate, a nitride semiconductor layer, and a joint layer disposed between the support substrate and the nitride semiconductor layer. It discloses, as a specific example thereof, a composite substrate having a diameter of 50.8 mm and including a sapphire substrate, a GaN layer, and a joint layer formed by press fitting between the substrate and the GaN layer, in which the GaN layer has a thickness of 5 μm to 220 μm.
  • [Problems to be Solved by Reference Invention I]
  • The free-standing group III nitride substrate disclosed in Japanese Patent Laying-Open No. 2009-126722 involves problems that the substrate is manufactured at high cost and therefore very expensive, and that the substrate is likely to crack, resulting in difficulty in increasing the diameter of the substrate and decreasing the thickness thereof.
  • Regarding the GaN-thin-film-bonded substrate having the GaN thin film of 0.1 μm in thickness as disclosed in Japanese Patent Laying-Open No. 2008-010766, ion implantation is performed to form the GaN thin film, which, however, involves a problem that the ion implantation degrades the crystal quality of the GaN thin film. In order to enhance the characteristics of the semiconductor device to be formed, the thickness of the GaN thin film is preferably 10 μm or more. An increase in thickness of the GaN thin film, however, involves a problem that the variation in depth to which ions are implanted from the main surface increases, which accordingly increases the variation in thickness of the GaN thin film in the resultant GaN-thin-film-bonded substrate.
  • Regarding the GaN-thin-film-bonded substrate having the GaN thin film of 100 μm in thickness as disclosed in Japanese Patent Laying-Open No. 2008-010766 as well as the composite substrate having the GaN layer of 5 μm to 220 μm in thickness as disclosed in Japanese Patent Laying-Open No. 2010-182936, both these substrates have a diameter on the order of 50.8 mm. Increase of the diameter, however, involves a problem that the variation, within the main surface, of the thickness of the GaN thin film or the GaN layer increases.
  • In the case where a heterogeneous substrate such as sapphire substrate whose chemical composition and thermal expansion coefficient are different from those of a group III nitride substrate is prepared and a thick group III nitride film is grown on the heterogeneous substrate, there arises problems that large warp occurs and cracks are made.
  • Reference Invention I has been made to solve the problems above and an object of the invention is to provide a low-cost and large-diameter group III nitride composite substrate including a group III nitride film having a large thickness, a small thickness variation, and a high crystal quality, a method for manufacturing the group III nitride composite substrate, a laminated group III nitride composite substrate, and a group III nitride semiconductor device and a method for manufacturing the same.
  • [Solution to the Problems]
  • According to an aspect, Reference Invention I provides a group III nitride composite substrate with a diameter of 75 mm or more including a support substrate and a group III nitride film having a thickness of 10 μm or more and 250 μm or less that are bonded to each other, a ratio st/mt of a standard deviation st of the thickness of the group III nitride film, to a mean value mt of the thickness thereof being 0.001 or more and 0.2 or less, and a ratio so/mo of a standard deviation so of an absolute value of an off angle between a main surface of the group III nitride film and a plane of a predetermined plane orientation, to a mean value mo of the absolute value of the off angle thereof being 0.005 or more and 0.6 or less.
  • Regarding the group III nitride composite substrate according the above aspect of Reference Invention I, the group III nitride composite substrate may have a warp of 50 μm or less on the group III-nitride-film-side main surface, and the group III nitride composite substrate may have a total thickness variation (TTV hereinafter) of 30 μm or less. Further, a ratio αIII-N/αs of a thermal expansion coefficient αIII-N of the group III nitride film to a thermal expansion coefficient αs of the support substrate may be 0.75 or more and 1.25 or less, and a ratio tIII-N/tS of a thickness tIII-N of the group III nitride film to a thickness tS of the support substrate may be 0.02 or more and 1 or less. Further, impurity metal atoms of the main surface of the group III nitride film may be 3×1012 atoms/cm2 or less. Further, the main surface of the group III nitride film may have a root mean square roughness (RMS hereinafter) of 3 nm or less. Further, a main surface of the support substrate may have an RMS of 12 nm or less. Further, the group III nitride composite substrate may have a diameter of 100 mm or more, or may have a diameter of 125 mm or more and 300 mm or less. Further, the main surface of the group III nitride film may have a mean value mIII-N of the RMS of 0.1 nm or more and 2 nm or less, and a standard deviation sIII-N of the RMS of 0.4 nm or less, and a main surface of the support substrate may have a mean value mS of the RMS of 0.3 nm or more and 10 nm or less, and a standard deviation sS of the RMS of 3 nm or less.
  • According to another aspect, Reference Invention I provides a laminated group III nitride composite substrate including the group III nitride composite substrate according to the above aspect, and at least one group III nitride layer disposed on the group III nitride film of the group III nitride composite substrate.
  • According to still another aspect, Reference Invention I provides a group III nitride semiconductor device including the group III nitride film in the group III nitride composite substrate according to the above aspect, and at least one group III nitride layer disposed on the group III nitride film.
  • According to a further aspect, Reference Invention I provides a method for manufacturing a group III nitride composite substrate according to the above aspect, including the steps of: forming a joined substrate with a diameter of 75 mm or more by bonding a support substrate and a group III nitride film donor substrate to each other; and forming the group III nitride composite substrate by cutting the group III nitride film donor substrate in the joined substrate along a plane located inwardly at a predetermined distance from a bonded main surface of the group III nitride film donor substrate.
  • According to a still further aspect, Reference Invention I provides a method for manufacturing a group III nitride composite substrate according to the above aspect, including the steps of: forming a joined substrate with a diameter of 75 mm or more by bonding a support substrate and a group III nitride film donor substrate to each other; and forming the group III nitride composite substrate by performing at least one of grinding, polishing, and etching on a main surface of the group III nitride film donor substrate in the joined substrate, the main surface being opposite to a bonded main surface of the group III nitride film donor substrate.
  • According to a still further aspect, Reference Invention I provides a method for manufacturing a group III nitride semiconductor device, including the steps of: preparing a group III nitride composite substrate according to the above aspect; and growing at least one group III nitride layer on the group III nitride film of the group III nitride composite substrate.
  • The method for manufacturing a group III nitride semiconductor device according to this aspect of Reference Invention I may further include the steps of: bonding a device support substrate onto the group III nitride layer; and removing the support substrate from the group III nitride composite substrate.
  • [Effects of Reference Invention I]
  • Reference Invention I can provide a low-cost and large-diameter group III nitride composite substrate including a group III nitride film having a large thickness, a small thickness variation, and a high crystal quality, a method for manufacturing the group III nitride composite substrate, a laminated group III nitride composite substrate, and a group III nitride semiconductor device and a method for manufacturing the same.
    • Reference Embodiment I-1 Group III Nitride Composite Substrate
  • Referring to FIG. 6, a group III nitride composite substrate 1 which is a reference embodiment of Reference Invention I is a group III nitride composite substrate 1 with a diameter of 75 mm or more including a support substrate 11 and a group III nitride film 13 having a thickness of 10 μm or more and 250 μm or less that are bonded to each other. The ratio st/mt of a standard deviation st of the thickness of group III nitride film 13, to a mean value mt of the thickness thereof is 0.001 or more and 0.2 or less, and the ratio so/mo of a standard deviation so of an absolute value of an off angle between a main surface 13 m of group III nitride film 13 and a plane of a predetermined plane orientation, to a mean value mo of the absolute value of the off angle thereof is 0.005 or more and 0.6 or less.
  • Group III nitride composite substrate 1 of the present reference embodiment has a diameter of 75 mm or more, group III nitride film 13 bonded onto support substrate 11 has a thickness of 10 μm or more and 250 μm or less, the ratio st/mt of standard deviation st of the thickness of group III nitride film 13, to mean value mt of the thickness thereof is 0.001 or more and 0.2 or less, and the ratio so/mo of standard deviation so of an absolute value of an off angle between main surface 13 m of group III nitride film 13 and a plane of a predetermined plane orientation, to mean value mo of the absolute value of the off angle thereof is 0.005 or more and 0.6 or less.
  • Accordingly, on group III nitride film 13, at least one group III nitride layer having a large diameter and a high crystal quality can be grown, and therefore, group III nitride semiconductor devices having excellent characteristics can be produced with a high yield.
  • Regarding group III nitride composite substrate 1 of the present reference embodiment, the manner in which support substrate 11 and group III nitride film 13 are bonded to each other is not particularly limited. In order to increase the joint strength of the bonding, however, it is preferable to provide a joint film 12 between the support substrate 11 and the group III nitride film 13.
  • <Diameter of Group III Nitride Composite Substrate>
  • In order to produce a greater number of semiconductor device chips from one composite substrate, the diameter of group III nitride composite substrate 1 is 75 mm or more, and is preferably 100 mm or more, more preferably 125 mm or more, and still more preferably 150 mm or more. Meanwhile, in order to reduce the warp of the composite substrate and increase the yield of semiconductor devices, the diameter of group III nitride composite substrate 1 is preferably 300 mm or less, and more preferably 200 mm or less.
  • <Warp on the Group III Nitride Film Side of Group III Nitride Composite Substrate>
  • In order to increase the yield of semiconductor devices to be formed, group III nitride composite substrate 1 has a warp, on the group III nitride film 13 side, of preferably 50 μm or less, more preferably 30 μm or less, and still more preferably 20 μm or less. Here, the warp on the group III nitride film 13 side of group III nitride composite substrate 1 is calculated in the following way. With respect to a least square plane where the sum of respective squares of the distances from the least square plane to any points within main surface 13 m of group III nitride film 13 is a minimum value, the distance between the least square plane and a point on the main surface that is located furthest away in one direction from the least square plane and the distance between the least square plane and a point on the main surface that is located furthest away in the other direction from the least square plane are added together. The value of this sum represents the warp. The warp is measured by means of an interferometric flatness tester, a laser displacement meter, or the like.
  • <TTV of Group III Nitride Composite Substrate>
  • In order to increase the yield of semiconductor devices to be formed, the TTV (Total Thickness Variation which is one of indices used for evaluating the flatness and also called GBIR (Global Backside Ideal Range)) of group III nitride composite substrate 1 is preferably 30 μm or less, more preferably 20 μm or less, and still more preferably 10 μm or less. Here, the TTV of group III nitride composite substrate 1 is the difference between the maximum value and the minimum value, within the whole main surface 13 m of group III nitride film 13, of the distance measured in the thickness direction from a reference plane, which is a main surface of support substrate 11 and is the rear surface of group III nitride composite substrate 1, to main surface 13 m of group III nitride film 13, which is the front surface of group III nitride composite substrate 1. Specifically, the TTV is the difference between the highest level and the lowest level of the main surface of group III nitride film 13, which is the front surface of group III nitride composite substrate 1, relative to the reference plane, which is the main surface of support substrate 11, namely the rear surface of group III nitride composite substrate 1, and corrected to be flat. The level difference is measured by means of an interferometric flatness tester, a laser displacement meter, or the like.
  • <Relation Between Support Substrate and Group III Nitride Film in Group III Nitride Composite Substrate>
  • In order to reduce warp and cracks of group III nitride composite substrate 1 and of a group III nitride layer to be grown on group III nitride film 13, the ratio αIII-N/αS of thermal expansion coefficient of the group III nitride film to thermal expansion coefficient αs of the support substrate is preferably 0.75 or more and 1.25 or less, more preferably 0.8 or more and 1.2 or less, still more preferably 0.9 or more and 1.1 or less, and particularly preferably 0.95 or more and 1.05 or less.
  • In order to reduce warp and cracks of group III nitride composite substrate 1 and of a group III nitride layer to be grown on group III nitride film 13, the ratio tIII-N/tS of thickness tIII-N of the group III nitride film to thickness tS of the support substrate is preferably 0.02 or more and 1 or less, more preferably 0.06 or more and 0.7 or less, still more preferably 0.15 or more and 0.5 or less, and particularly preferably 0.2 or more and 0.4 or less.
  • <Support Substrate>
  • Support substrate 11 is not particularly limited as long as support substrate 11 can support group III nitride film 13. In order to reduce the amount of use of the expensive group III nitride to thereby lower the cost, however, the support substrate is preferably a hetero-composition substrate whose chemical composition is different from that of the group III nitride. Further, since it is preferable as described above that the ratio αIII-N/αS of thermal expansion coefficient αIII-N of group III nitride film 13 to thermal expansion coefficient αs of support substrate 11 is 0.75 or more and 1.25 or less, support substrate 11 is preferably a substrate formed of mullite (3Al2O3.2SiO2-2Al2O3.SiO2), a substrate formed of mullite-YSZ (Yttria Stabilized Zirconia), a substrate formed of spinel (MgAl2O4), a substrate formed of a sintered body of an Al2O3—SiO2-based composite oxide, and substrates formed respectively of sintered bodies of them to which oxide, carbonate or the like is added, a molybdenum (Mo) substrate, a tungsten (W) substrate, or the like. Here, preferred elements to be contained in the oxide and the carbonate are Ca, Mg, Sr, Ba, Al, Sc, Y, Ce, Pr, Si, Ti, Zr, V, Nb, Ta, Cr, Mn, Fe, Co, Ni, Cu, Zn, and the like.
  • The root mean square roughness (hereinafter also referred to as RMS) of main surface 11 n of support substrate 11 in group III nitride composite substrate 1 is preferably 12 nm or less, more preferably 6 nm or less, and still more preferably 2 nm or less, in order to enhance the crystal quality of a group III nitride layer to be grown on group III nitride film 13 of group III nitride composite substrate 1. Here, the RMS of main surface 11 n of support substrate 11 can be adjusted by polishing both the main surfaces of support substrate 11 before group III nitride film 13 is bonded to support substrate 11, or polishing, after group III nitride film 13 is bonded to support substrate 11, the other main surface to which group III nitride film 13 is not bonded. Here, the RMS of main surface 11 n of support substrate 11 is determined in the following way. From points on main surface 11 n of support substrate 11, a reference plane is calculated, and the positive square root of the mean of respective squares of the distances from the aforementioned points to the reference plane is determined. The value of the determined positive square root is the RMS, which is measured by means of an AFM (Atomic Force Microscope), an interferometric roughness meter, a stylus-based roughness meter, or the like.
  • The main surface 11 n of support substrate 11 preferably has a mean value mS of the RMS of 0.3 nm or more and 10 nm or less, and a standard deviation sS of the RMS of 3 nm or less. In the case where main surface 11 n of support substrate 11 has a mean value mS of the RMS of 10 nm or less and a standard deviation sS of the RMS of 3 nm or less, a group III nitride layer of high crystal quality can be grown on the whole main surface 13 m of group III nitride film 13 and accordingly semiconductor devices can be produced with a high yield. In order for main surface 11 n of support substrate 11 to have a mean value mS of the RMS of less than 0.3 nm, sophisticated surface polishing is necessary, which increases the cost to a considerable degree. In view of the above, mean value mS of the RMS of main surface 11 n of support substrate 11 is more preferably 0.3 nm or more and 5 nm or less, and still more preferably 0.3 nm or more and 2 nm or less. In addition, standard deviation sS of the RMS of main surface 11 n of support substrate 11 is more preferably 2 nm or less, and still more preferably 1 nm or less.
  • Here, mean value mS and standard deviation sS of the RMS of main surface 11 n of support substrate 11 are respectively the arithmetic mean and the standard deviation that are calculated from the RMS measured at the 13 measurement points on main surface 11 n of support substrate 11 shown in FIG. 7. The 13 measurement points P on main surface 11 n of support substrate 11 shown in FIG. 7 are constituted, regardless of the magnitude of the diameter of support substrate 11: one central point PC; four outer points PO located respectively in the four directions with respect to central point PC that are orthogonal to each other, the outer points each being located at 5 mm inward from the outer edge of the substrate; and eight middle points PM including four middle points each between the one central point PC and one of the four outer points PO and four middle points each between two of the four outer points PO. The standard deviation here refers to the positive square root of unbiased variance.
  • <Joint Film>
  • Joint film 12 is not particularly limited as long as joint film 12 can join support substrate 11 and group III nitride film 13 to each other. Joint film 12 is preferably SiO2 film, Si3N4 film, TiO2 film, Ga2O3 film, or the like because these films have a high joining ability for joining support substrate 11 and group III nitride film 13 to each other.
  • <Group III Nitride Film>
  • Group III nitride film 13 is a film formed of a group III nitride, specifically an InxAlyGa1-x-yN film (0≦x, 0≦y, x+y≦1) such as GaN film, AlN film, or the like.
  • In order to form a group III nitride semiconductor device having excellent characteristics, the thickness of group III nitride film 13 is 10 μm or more, which is preferably 30 μm or more, more preferably 50 μm or more, and still more preferably 100 μm or more. Meanwhile, in order to reduce the amount of use of the expensive group III nitride, the thickness of group III nitride film 13 is 250 μm or less, which is preferably 200 μm or less, and more preferably 170 μm or less, and particularly preferably 150 μm or less.
  • The ratio st/mt of standard deviation st of the thickness of group III nitride film 13, to mean value mt of the thickness thereof is 0.001 or more and 0.2 or less, which is preferably 0.001 or more and 0.15 or less, more preferably 0.002 or more and 0.1 or less, and still more preferably 0.01 or more and 0.05 or less. In order to make the ratio st/mt smaller than 0.001, it is necessary to perform cutting and polishing and thereby precisely control the thickness, which increases the cost. On the contrary, if the ratio st/mt is higher than 0.2, the uniformity of the film thickness is deteriorated, which degrades the characteristics of semiconductor devices to be produced.
  • The ratio so/mo of standard deviation so of an absolute value of an off angle between main surface 13 m of group III nitride film 13 and a plane of a predetermined plane orientation, to mean value mo of the absolute value of the off angle thereof is 0.005 or more and 0.6 or less, which is preferably 0.005 or more and 0.5 or less, more preferably 0.008 or more and 0.4 or less, and still more preferably 0.05 or more and 0.2 or less. In order to make the ratio so/mo smaller than 0.005, it is necessary to perform cutting and polishing and thereby precisely control the off angle, which increases the cost. On the contrary, if the ratio so/mo is higher than 0.6, a portion where the morphology of a group III nitride layer formed on group III nitride film 13 is deteriorated is generated within the main surface. In addition, the variation, within the main surface, of the amount of impurities taken into the main surface is large, which reduces the yield of semiconductor devices to be produced.
  • The crystal structure of group III nitride film 13 is preferably the wurtzite structure, since it enables semiconductor devices having excellent characteristics to be produced. The above-referenced predetermined plane orientation to which main surface 13 m of group III nitride film 13 is closest is not limited as long as it is suitable for a desired semiconductor device, and may be any of {0001}, {10-10}, {11-20}, {21-30}, {20-21}, {10-11}, {11-22}, and {22-43}, as well as plane orientations that are 15° or less off from these plane orientations, respectively. It may also be any of the plane orientations opposite to the above-listed plane orientations, as well as plane orientations that are 15° or less off from these plane orientations, respectively. Namely, main surface 13 m of group III nitride film 13 may be any of polar plane, nonpolar plane, and semipolar plane. Main surface 13 m of group III nitride film 13 is preferably any of the {0001} plane and the opposite plane thereof, since such planes make it easy to increase the diameter, or any of {10-10} plane, {20-21} plane, and the opposite planes thereof, since such planes suppress blue shift of a light-emitting device to be produced.
  • Here, regarding group III nitride film 13, mean value mt of the thickness, standard deviation st of the thickness, mean value mo of the off angle, and standard deviation so of the off angle, are values of the arithmetic mean and the standard deviation calculated from respective measurements of the thickness and respective measurements of the off angle that are taken at the 13 measurement points on main surface 13 m of group III nitride film 13 shown in FIG. 7. The 13 measurement points P on main surface 13 m of group III nitride film 13 shown in FIG. 7 are constituted, regardless of the magnitude of the diameter of the group III nitride film: one central point PC; four outer points PO located respectively in the four directions with respect to central point PC that are orthogonal to each other, the outer points each being located at 5 mm inward from the outer edge; and eight middle points PM including four middle points each between the one central point PC and one of the four outer points PO and four middle points each between two of the four outer points PO. The standard deviation here refers to the positive square root of unbiased variance.
  • In order to enhance the crystal quality of a group III nitride layer to be grown on group III nitride film 13 and enhance the characteristics of semiconductor devices to be formed, impurity metal atoms of main surface 13 m of group III nitride film 13 are preferably 3×1012 atoms/cm2 or less, more preferably 4×1011 atoms/cm2 or less, and still more preferably 1×1011 atoms/cm2 or less. As for other impurities of the surface of group III nitride film 13, Cl atoms are preferably 2×1014 atoms/cm2 or less, and Si atoms are preferably 9×1013 atoms/cm2 or less, in order to enhance the crystal quality of a group III nitride layer to be grown on group III nitride film 13 and enhance the characteristics of semiconductor devices to be formed.
  • In order to enhance the crystal quality of a group III nitride layer to be grown on group III nitride film 13, the RMS of main surface 13 m of group III nitride film 13 is preferably 3 nm or less, more preferably 2 nm or less, and still more preferably 1 nm or less.
  • Preferably, main surface 13 m of group III nitride film 13 has a mean value MIII-N of the RMS of 0.1 nm or more and 2 nm or less, and a standard deviation sIII-N of the RMS of 0.4 nm or less. In the case where main surface 13 m of group III nitride film 13 has a mean value mIII-N of the RMS of 2 nm or less and a standard deviation sIII-N of the RMS of 0.4 nm or less, a group III nitride layer of high crystal quality can be grown on the whole main surface 13 m of group III nitride film 13, and accordingly, semiconductor devices can be produced with a high yield. In order for main surface 13 m of group III nitride film 13 to have a mean value mIII-N of the RMS of less than 0.1 nm, sophisticated surface polishing is necessary, which increases the cost to a considerable degree. In view of the above, mean value of the RMS of main surface 13 m of group III nitride film 13 is more preferably 0.1 nm or more and 1.5 nm or less, and still more preferably 0.2 nm or more and 1 nm or less. In addition, main surface 13 m of group III nitride film 13 has a standard deviation SIII-N of the RMS of more preferably 0.3 nm or less, and still more preferably 0.2 nm or less.
  • Here, the mean value mIII-N and the standard deviation of the RMS of main surface 13 m of group III nitride film 13 are respectively the arithmetic mean and the standard deviation that are calculated from the RMS measured at the 13 measurement points on the main surface of group III nitride film 13 shown in FIG. 7, as described above. Moreover, regarding group III nitride film 13, its dislocation density is preferably 1×108 cm−2 or less, and its carrier concentration is preferably 1×1017 cm−3 or more.
    • Reference Embodiment I-2 Laminated Group III Nitride Composite Substrate
  • Referring to FIG. 8, a laminated group III nitride composite substrate 2 which is another reference embodiment of Reference Invention I includes group III nitride composite substrate 1 of Reference Embodiment I-1, and at least one group III nitride layer 20 disposed on group III nitride film 13 of group III nitride composite substrate 1.
  • In laminated group III nitride composite substrate 2 of the present reference embodiment, group III nitride layer 20 disposed by being grown on group III nitride film 13, which has a high crystal quality as well as a small thickness variation and a small off-angle variation, also has a high crystal quality. Therefore, semiconductor devices having excellent characteristics can be produced with a high yield.
  • In laminated group III nitride composite substrate 2 of the present reference embodiment, group III nitride layer 20 disposed on group III nitride film 13 varies depending on the type of the semiconductor device to be produced. Referring to FIG. 9, in the case where the semiconductor device to be produced is a light-emitting device, group III nitride layer 20 may be configured to include, for example, an n-GaN layer 21, an n-In0.05Ga0.95N layer 22, an active layer 23 having a multiple quantum well structure, a p-Al0.09Ga0.91N layer 24, and a p-GaN layer 25. Referring to FIG. 10, in the case where the semiconductor device to be produced is an HEMT (High Electron Mobility Transistor) which is an example of electronic devices, the group III nitride layer may be configured to include, for example, a GaN layer 26 and an Al0.2Ga0.8N layer 27. Referring to FIG. 11, in the case where the semiconductor device to be produced is an SBD (Schottky Barrier Diode) which is another example of electronic devices, the group III nitride layer may be configured to include, for example, an n+-GaN layer 28 (having a carrier concentration for example of 2×1018 cm−3) and an n−-GaN layer 29 (having a carrier concentration for example of 5×1015 cm−3).
    • Reference Embodiment I-3 Group III Nitride Semiconductor Device
  • Referring to FIGS. 9 and 10, a group III nitride semiconductor device 4 which is still another reference embodiment of Reference Invention I includes group III nitride film 13 in the group III nitride composite substrate of Reference Embodiment I-1, and at least one group III nitride layer 20 disposed on group III nitride film 13.
  • Group III nitride semiconductor device 4 of the present reference embodiment includes group III nitride film 13 which has a high crystal quality as well as a small thickness variation and a small off-angle variation, and group III nitride layer 20 of high crystal quality disposed by being grown on group III nitride film 13, and therefore has excellent characteristics.
  • In group III nitride semiconductor device 4, group III nitride layer 20 varies depending on the type of group III nitride semiconductor device 4. Referring to FIG. 9, in the case where group III nitride semiconductor device 4 is a light-emitting device, group III nitride layer 20 may be configured to include, for example, an n-GaN layer 21, an n-In0.05Ga0.95N layer 22, an active layer 23 having a multiple quantum well structure, a p-Al0.09Ga0.91N layer 24, and a p-GaN layer 25. Referring to FIG. 10, in the case where group III nitride semiconductor device 4 is an HEMT which is an example of electronic devices, group III nitride layer 20 may be configured to include, for example, a GaN layer 26 and an Al0.2Ga0.8N layer 27. Referring to FIG. 11, in the case where the semiconductor device is an SBD which is another example of electronic devices, the group III nitride layer may be configured to include, for example, an n+-GaN layer 28 (having a carrier concentration for example of 2×1018 cm−3) and an n−-GaN layer 29 (having a carrier concentration for example of 5×1015 cm−3).
  • Preferably, group III nitride semiconductor device 4 further includes at least one of support substrate 11 and a device support substrate 40 for supporting group III nitride layer 20. Here, the shape of device support substrate 40 is not limited to the shape of a flat plate, and may be any as long as it supports group III nitride film 13 and group III nitride layer 20 so that group III nitride semiconductor device 4 can be formed.
    • Reference Embodiment I-4 Method for Manufacturing Group III Nitride Composite Substrate
  • Referring to FIGS. 12 and 13, a method for manufacturing a group III nitride composite substrate which is a further reference embodiment of Reference Invention I is a method for manufacturing group III nitride composite substrate 1 of Reference Embodiment I-1, including the steps of: forming a joined substrate 1L, 1LS having a diameter of 75 mm or more by bonding support substrate 11 and a group III nitride film donor substrate 13D to each other (FIG. 12 (A) to (C) and FIG. 13 (A) to (C)); and forming group III nitride composite substrate 1 by cutting group III nitride film donor substrate 13D in joined substrate 1L, 1LS along a plane located inwardly at a predetermined distance from the bonded main surface of group III nitride film donor substrate 13D (FIG. 12 (D), FIG. 13 (D)).
  • The method for manufacturing a group III nitride composite substrate of the present reference embodiment can efficiently manufacture low-cost and large-diameter group III nitride composite substrate 1 including a group III nitride film having a large thickness and a high crystal quality.
  • Here, in the step of forming group III nitride composite substrate 1, the predetermined distance of the plane located inwardly from the bonded main surface of group III nitride film donor substrate 13D, for cutting group III nitride film donor substrate 13D along the plane at this distance, is determined depending on the thickness of group III nitride film 13 of group III nitride composite substrate 1 to be manufactured.
  • In addition, in the step of forming group III nitride composite substrate 1, group III nitride film donor substrate 13D is cut to form group III nitride film 13, and thereafter at least one of grinding, polishing, and etching can be performed on the main surface 13 m of group III nitride film 13 opposite to bonded main surface 13 n thereof, to thereby reduce the thickness of group III nitride film 13. In particular, in order to reduce the thickness variation and the off-angle variation of group III nitride film 13 which is formed by cutting group III nitride film donor substrate 13D, it is preferable to polish the main surface, which has been obtained by the cutting, of group III nitride film 13 in group III nitride composite substrate 1. In order to reduce the thickness variation and the off-angle variation of group III nitride film 13, the method for polishing is preferably precision polishing based on CMP (Chemical Mechanical Polishing), chemical polishing, or the like.
  • In view of the above, the predetermined distance of the plane located inwardly from bonded main surface 13 n of group III nitride film donor substrate 13D, for cutting group III nitride film donor substrate 13D along the plane at this distance, is preferably the sum determined by adding a polishing allowance, which is a portion to be removed away by polishing, to the thickness of group III nitride film 13 of group III nitride composite substrate 1 to be manufactured.
  • Regarding the method for manufacturing group III nitride composite substrate 1 of the present reference embodiment, group III nitride film donor substrate 13D is cut along a plane located inwardly at a predetermined distance from bonded main surface 13 n of group III nitride film donor substrate 13D in joined substrate 1L, 1LS, and preferably at least one of grinding, polishing, and etching is performed on the main surface 13 m which is opposite to bonded main surface 13 n of group III nitride film donor substrate 13D, to thereby adjust the film thickness by reducing it. Accordingly, group III nitride composite substrate 1 including group III nitride film 13 having a desired thickness of 10 μm or more and 250 μm or less can be obtained.
  • As for the method for manufacturing group III nitride composite substrate 1 of the present reference embodiment, the group III nitride film donor substrate is cut in the step of forming the group III nitride composite substrate. Thus, in order to improve the workability and the efficiency of manufacture, the thickness of group III nitride film donor substrate 13D to be used is preferably larger than 500 μm, more preferably 1 mm or more, and still more preferably 2 mm or more.
  • <Step of Forming Joined Substrate>
  • Referring to FIG. 12 (A) to (C) and FIG. 13 (A) to (C), the step of forming joined substrate 1L, 1LS includes the sub step of forming a joint film 12 a on a main surface 11 m of support substrate 11 (FIG. 12 (A), FIG. 13 (A)), the sub step of forming a joint film 12 b on a main surface 13 n of group III nitride film donor substrate 13D (FIG. 12 (B), FIG. 13 (B)), and the sub step of bonding joint film 12 a formed on support substrate 11 and joint film 12 b formed on group III nitride film donor substrate 13D to each other (FIG. 12 (C), FIG. 13 (C)).
  • Referring to FIG. 12 (A) and FIG. 13 (A), in the sub step of forming joint film 12 a on main surface 11 m of support substrate 11, joint film 12 a is to be integrated with joint film 12 b, which will be described later herein, to form joint film 12, and is made of the same material as joint film 12. The method for forming joint film 12 a is not particularly limited as long as the method is suitable for forming joint film 12 a. In order to efficiently form joint film 12 a of good quality, however, the method is preferably sputtering, CVD (Chemical Vapor Deposition), PLD (Pulsed Laser Deposition), MBE (Molecular Beam Epitaxy), electron-beam deposition, or the like. CVD is particularly preferred since it enhances the quality of the joint film and enhances the film deposition rate. Among different CVD methods, P-CVD (Plasma-Chemical Vapor Deposition), PE-CVD (Plasma Enhanced-Chemical Vapor Deposition), and the like are more preferred since they enable the film to be deposited at a low temperature and at a high deposition rate, and LP-CVD (Low Pressure-Chemical Vapor Deposition) and the like are still more preferred since they enhance the film quality and facilitate mass production.
  • Further, in order to improve the joint strength, annealing may be performed after joint films 12 a, 12 b are formed and before they are joined together. This annealing can degas joint films 12 a, 12 b to thereby densify joint films 12 a, 12 b.
  • Furthermore, in order to increase the joint strength between support substrate 11 and group III nitride film donor substrate 13D, a main surface 12 am of joint film 12 a is preferably mirror-polished (into a mirror-finished surface having an RMS of 0.3 nm or less). The method for polishing main surface 12 am of joint film 12 a is not particularly limited. For example, CMP (Chemical Mechanical Polishing) or the like is used. In order to improve the cleanliness of the joint film for the purpose of increasing the joint strength, non-abrasive polishing may be performed, after CMP, with a solution containing no abrasive. In order to enhance the effect of removing the abrasive, non-abrasive polishing may be performed by means of an alkali such as KOH, TMAH (tetramethylammonium hydroxide), or an acid such as HCl, HNO3, H2SO4. In addition, in order to improve the cleanliness of the joint film for the purpose of increasing the joint strength, scrub cleaning using sponge, brush, or the like may be performed. In addition, two-fluid cleaning, megasonic cleaning, ultrasonic cleaning, or the like may suitably be performed.
  • Referring to FIG. 12 (B) and FIG. 13 (B), in the sub step of forming joint film 12 b on main surface 13 n of group III nitride film donor substrate 13D, group III nitride film donor substrate 13D is a donor substrate which is to provide group III nitride film 13 after a part thereof is separated in the subsequent sub step. The method for preparing this group III nitride film donor substrate 13D is not particularly limited. In order to produce group III nitride film donor substrate 13D of good crystallinity, suitable methods are gas phase methods such as HYPE (Hydride Vapor Phase Epitaxy), MOVPE (Metal Organic Vapor Phase Epitaxy), MBE (Molecular Beam Epitaxy), and sublimation method, as well as liquid phase methods such as flux method, high nitrogen pressure solution method, ammonothermal method, and the like. Group III nitride film donor substrate 13D prepared in this way is not particularly limited. In order to provide group III nitride film 13 of good crystallinity, the donor substrate preferably has a degree of crystallinity substantially identical to that of group III nitride film 13 to be provided. Specifically, it is preferable that the ratio so/mo of standard deviation so of an absolute value of an off angle between main surface 13 m of group III nitride film donor substrate 13D and a plane of a predetermined plane orientation, to a mean value mo of the absolute value of the off angle thereof is 0.005 or more and 0.6 or less.
  • The material and the method for forming joint film 12 b as well as polishing of a main surface 12 bn of joint film 12 b are similar to the material and the method for forming the above-described joint film 12 a as well as polishing of main surface 12 am of joint film 12 a.
  • Referring to FIG. 12 (C) and FIG. 13 (C), in the sub step of bonding joint film 12 a formed on support substrate 11 and joint film 12 b formed on group III nitride film donor substrate 13D to each other, the method for bonding them together is not particularly limited. Suitable methods include: a direct bonding method according to which respective surfaces to be bonded to each other are cleaned, directly bonded together, and thereafter heated to approximately 600° C. to 1200° C. so that the joint films are joined together; a surface activated bonding method according to which the surfaces to be bonded to each other are cleaned, subjected to an activation treatment by means of plasma or ions, and thereafter joined together under a low-temperature atmosphere of room temperature (25° C. for example) to 400° C.; a high-pressure bonding method according to which the surfaces to be bonded to each other are cleaned with a chemical solution and pure water and thereafter subjected to a high pressure on the order of 0.1 MPa to 10 MPa so that the joint films are joined together; a high vacuum bonding method according to which the surfaces to be bonded to each other are cleaned with a chemical solution and pure water, and thereafter joined together under a high vacuum atmosphere on the order of 10−6 Pa to 10−3 Pa, and the like. Any of the above-referenced bonding methods can increase the temperature to approximately 600° C. to 1200° C. after the joint films are joined together to thereby further increase the joint strength. In particular, the surface activated bonding method, the high pressure bonding method, and the high vacuum bonding method exhibit a higher effect of increasing the joint strength through the heating to approximately 600° C. to 1200° C. after the joint films are joined together.
  • The above bonding causes joint film 12 a and joint film 12 b to be joined together and thereby integrated into joint film 12. Support substrate 11 and group III nitride film donor substrate 13D are joined together with joint film 12 interposed therebetween to thereby form joined substrate 1L, 1LS.
  • Respective surfaces of joint films 12 a and 12 b to be bonded to each other can thus be activated before being bonded to each other, to thereby increase the joint strength. Activation of the surfaces to be bonded is not particularly limited. The surfaces are preferably activated through plasma treatment, ion treatment, chemical treatment by means of a chemical solution, cleaning, CMP treatment, and the like, since they have a high activation effect.
  • <Step of Forming Group III Nitride Composite Substrate>
  • Referring to FIG. 12 (D) and FIG. 13 (D), in the step of forming group III nitride composite substrate 1, group III nitride film donor substrate 13D is cut along a plane located inwardly at a predetermined distance from bonded main surface 13 n of group III nitride film donor substrate 13D in joined substrate 1L, 1LS. Accordingly, the donor substrate is separated into group III nitride film 13, which is joined to support substrate 11 with joint film 12 interposed therebetween, and a remaining group III nitride film donor substrate 13Dr. Thus, group III nitride composite substrate 1 in which support substrate 11 and group III nitride film 13 are bonded to each other with joint film 12 interposed therebetween is formed.
  • The method for cutting group III nitride film donor substrate 13D is not particularly limited, and may be any of the methods such as wire saw, blade saw, laser processing, electrical discharge processing, water jet, and the like.
  • As to cutting of group III nitride film donor substrate 13D by means of a wire saw, it is preferable to use a fixed-abrasive wire in order to flatly cut group III nitride film donor substrate 13D of a large diameter, and it is preferable to use a thin wire in order to reduce a cutting allowance, which is a portion to be removed away through cutting. For reduction of the cutting allowance, loose-abrasive processing is preferred. In addition, as to cutting of group III nitride film donor substrate 13D by means of a wire saw, it is preferable to increase the tension of the wire and increase the wire speed, in order to reduce bending of the wire caused by the cut resistance and thereby improve the thickness precision and the flatness. For this purpose, a high-rigidity wire saw apparatus is preferred.
  • It is also preferable to swing the wire and vibrate group III nitride film donor substrate 13D in synchronization therewith, in order to reduce the cut resistance and thereby improve the thickness precision and the flatness. Specifically, the cutting resistance can be reduced in the following manner. In the case where the wire saw is positioned at a right angle or an angle close thereto relative to the direction in which group III nitride film donor substrate 13D is cut, group III nitride film donor substrate 13D is moved along the direction in which it is cut. In the case where the wire saw is located at an angle further from the right angle relative to the direction in which group III nitride film donor substrate 13D is cut, group III nitride film donor substrate 13D is moved in the direction opposite to the direction in which it is cut.
  • The group III nitride such as GaN is more brittle and more prone to crack as compared with sapphire, SiC, and the like, and therefore cannot be cut appropriately by a cutting method similar to that used for sapphire and SiC. It is therefore necessary for cutting of the group III nitride to further reduce the cut resistance. In order to reduce the cut resistance and thereby enhance the thickness precision and the flatness, it is preferable that the resistance coefficient R (N) is within an appropriate range, specifically a range of 4000 or more and 5000 or less. The resistance coefficient R (N) is represented by (η×Q×V)/(L×P×n) where η (Pa·s) is the viscosity of a machining fluid for slicing, Q (m3/s) is the flow rate of the machining fluid, V (m/s) is the wire speed, L (m) is the maximum cut length, P (m/s) is the cut speed, and n is the number of workpieces that are cut simultaneously.
  • For group III nitride composite substrate 1 obtained through the cutting, respective main surfaces 13 m, 11 n of group III nitride film 13 and support substrate 11 can be polished so that a desired thickness, a desired off angle, and the uniformity of them are obtained. Specifically, in order to bond group III nitride composite substrate 1 to a polishing apparatus in a polishing process, group III nitride composite substrate 1 can be secured by means of suction and/or a back pad. Group III nitride composite substrate 1 may also be bonded first to a holding plate and then bonded to a polishing apparatus. For this bonding, mechanical pressurization such as vacuum chuck, air back pressurization, weight or the like can be used to reduce inclination and correct warp. Group III nitride composite substrate 1 may also be secured by means of suction. Group III nitride composite substrate 1 can uniformly be bonded to the polishing apparatus to reduce the thickness variation and the off-angle variation after polishing.
  • As seen from the above, regarding the method for manufacturing a group III nitride composite substrate in the present reference embodiment, it is preferable to polish main surface 13 m of group III nitride film 13 in group III nitride composite substrate 1 obtained through cutting, in order to reduce the thickness variation and the off-angle variation of group III nitride film 13 in group III nitride composite substrate 1, keep the crystal quality high by eliminating a damaged layer caused by cutting of group III nitride film 13, and smooth main surface 13 m.
  • Accordingly, regarding the method for manufacturing a group III nitride composite substrate in the present reference embodiment, the predetermined distance of the plane located inwardly from bonded main surface 13 n of group III nitride film donor substrate 13D, for cutting group III nitride film donor substrate 13D in joined substrate 1L, 1LS along the plane at this distance, is preferably the sum determined by adding a polishing allowance, which is a portion to be removed away by polishing, to the thickness of group III nitride film 13 of group III nitride composite substrate 1 to be manufactured. Here, the polishing allowance is not particularly limited, but preferably 10 μm or more, more preferably 20 μm or more, and still more preferably 30 μm or more, in order to reduce the thickness variation and the off-angle variation and remove a damaged layer. Meanwhile, in order to reduce the material loss of group III nitride film donor substrate 13D, the polishing allowance is preferably 100 μm or less, more preferably 80 μm or less, and still more preferably 60 μm or less.
  • Referring also to FIGS. 12 (D) and (B) and FIGS. 13 (D) and (B), the remaining group III nitride film donor substrate 13Dr may have its main surface polished so that it can be used repeatedly.
  • <Use of Support-Incorporated Group III Nitride Film Donor Substrate>
  • Referring to FIG. 13 (B) to (D), a support-incorporated group III nitride film donor substrate 5D in which a group III nitride film donor substrate support 15 is bonded to group III nitride film donor substrate 13D can be used to produce a group 111 nitride composite substrate 1 in a similar manner to the above. Support-incorporated group III nitride film donor substrate 5D has group III nitride film donor substrate support 15 which supports group III nitride film donor substrate 13D, and can therefore be used repeatedly even if group III nitride film donor substrate 13D becomes thinner to such an extent that substrate 13D cannot stand by itself.
  • Regarding support-incorporated group III nitride film donor substrate 5D, the form in which group III nitride film donor substrate support 15 and group III nitride film donor substrate 13D are bonded to each other is not particularly limited. In order to increase the joint strength of the bonding, however, it is preferable to dispose a joint film 14 therebetween. Group III nitride film donor substrate support 15 is also not particularly limited. In order to increase the support strength and prevent occurrence of crack and warp, however, it is preferable that support 15 is formed of a material having similar physical properties to support substrate 11. While joint film 14 is not particularly limited, it may preferably be any of SiO2 film, Si3N4 film, TiO2 film, Ga2O3 film, and the like, since these films provide a good joint to group III nitride film donor substrate support 15 and group III nitride film donor substrate 13D.
    • Reference Embodiment I-5 Another Method for Manufacturing Group III Nitride Composite Substrate
  • Referring to FIG. 14, a method for manufacturing a group III nitride composite substrate, which is a still further reference embodiment of Reference Invention I, is specifically a method for manufacturing group III nitride composite substrate 1 of the Reference Embodiment I-1, including the steps of: forming joined substrate 1L having a diameter of 75 mm or more by bonding support substrate 11 and group III nitride film donor substrate 13D to each other (FIG. 14 (A) to (C)); and forming group III nitride composite substrate 1 by performing at least one of grinding, polishing, and etching on a main surface of group III nitride film donor substrate 13D of joined substrate 1L, the main surface being located opposite to the bonded main surface of group III nitride film donor substrate 13D (FIG. 14 (D)).
  • In accordance with the method for manufacturing a group III nitride composite substrate in the present reference embodiment, low-cost and large-diameter group III nitride composite substrate 1 including a group III nitride film having a large thickness and a high crystal quality can efficiently be manufactured.
  • Regarding the method for manufacturing group III nitride composite substrate 1 in the present reference embodiment, at least one of grinding, polishing, and etching is performed on the main surface opposite to the bonded main surface of group III nitride film donor substrate 13D to thereby adjust the film thickness by reducing it, and accordingly, group III nitride composite substrate 1 including group III nitride film 13 having a desired thickness of 10 μm or more and 250 μm less can be obtained.
  • According to the method for manufacturing group III nitride composite substrate 1 in the present reference embodiment, in the step of forming a group III nitride composite substrate, at least one of grinding, polishing, and etching is performed on the main surface opposite to the bonded main surface of the group III nitride film donor substrate. Therefore, in order to reduce the material loss of group III nitride film donor substrate 13D, the thickness of group III nitride film donor substrate 13D to be used is preferably 500 μm or less, and more preferably 400 μm or less.
  • <Step of Forming Joined Substrate>
  • Referring to FIG. 14 (A) to (C), the step of forming joined substrate 1L includes, similarly to the method for manufacturing a group III nitride composite substrate in Reference Embodiment I-4, the sub step of forming joint film 12 a on main surface 11 m of support substrate 11 (FIG. 14 (A)), the sub step of forming joint film 12 b on main surface 13 n of group III nitride film donor substrate 13D (FIG. 14 (B)), and the step of bonding joint film 12 a formed on support substrate 11 and joint film 12 b formed on group III nitride film donor substrate 13D to each other (FIG. 14 (C)).
  • Here, the sub step of forming joint film 12 a on main surface 11 m of support substrate 11 as shown in FIG. 14 (A) is similar to the sub step of forming joint film 12 a on main surface 11 m of support substrate 11 as shown in FIG. 12 (A). The sub step of forming joint film 12 b on main surface 13 n of group III nitride film donor substrate 13D as shown in FIG. 14 (B) is similar to the sub step of forming joint film 12 b on main surface 13 n of group III nitride film donor substrate 13D as shown in FIG. 12 (B). The sub step of bonding joint film 12 a formed on support substrate 11 and joint film 12 b formed on group III nitride film donor substrate 13D to each other as shown in FIG. 14 (C) is similar to the sub step of bonding joint film 12 a formed on support substrate 11 and joint film 12 b formed on group III nitride film donor substrate 13D to each other as shown in FIG. 12 (C). Therefore, the description of them will not be repeated.
  • <Step of Forming Group III Nitride Composite Substrate>
  • Referring to FIG. 14 (D), in the step of forming group III nitride composite substrate 1, at least one of grinding, polishing, and etching is performed on main surface 13 m opposite to bonded main surface 13 n of group III nitride film donor substrate 13D in joined substrate 1L, to thereby form group III nitride film 13 with its thickness reduced, from group III nitride film donor substrate 13D, and accordingly form group III nitride composite substrate 1 in which support substrate 11 and group III nitride film 13 are bonded together with joint film 12 interposed therebetween.
  • The method for grinding group III nitride film donor substrate 13D is not particularly limited, and may be grinding by means of one of a grinding wheel and abrasive grains. The method for polishing group III nitride film donor substrate 13D is not particularly limited, and may be rough polishing such as mechanical polishing, precision polishing such as CMP and chemical polishing, or the like. The method for etching group III nitride film donor substrate 13D is not particularly limited, and may be wet etching using a chemical solution, dry etching such as RIE (Reactive Ion Etching), or the like.
  • In order to reduce the thickness variation and the off-angle variation of group III nitride film 13 to be formed, it is preferable to polish main surface 13 m of group III nitride film 13 of group III nitride composite substrate 1 obtained through at least one of grinding and etching. The reduction of the thickness by at least one of grinding, polishing, and etching is preferably 10 μm or more, more preferably 20 μm or more, and still more preferably 30 μm or more, in order to reduce the thickness variation and the off-angle variation, and remove a damaged layer. Meanwhile, the reduction of the thickness by at least one of grinding, polishing, and etching is preferably 100 μm or less, more preferably 80 μm or less, and still more preferably 60 μm or less, in order to reduce the material loss of group III nitride film donor substrate 13D.
    • Reference Embodiment I-6 Method for Manufacturing Group III Nitride Semiconductor Device
  • Referring to FIG. 15, a method for manufacturing a group III nitride semiconductor device, which is a still further reference embodiment of Reference Invention I, includes the steps of: preparing group III nitride composite substrate 1 of Reference Embodiment I-1; and growing at least one group III nitride layer 20 on group III nitride film 13 of group III nitride composite substrate 1 (FIG. 15 (A)). The method for manufacturing a group III nitride semiconductor device in the present reference embodiment can be used to manufacture group III nitride semiconductor devices having excellent characteristics with a high yield.
  • The method for manufacturing a group III nitride semiconductor device in the present reference embodiment may further include the steps of: bonding a device support substrate 40 onto group III nitride layer 20 (FIG. 15 (B)); and removing support substrate 11 from group III nitride composite substrate 1 (FIG. 15 (C)). These steps can be added to manufacture, with a high yield, group III nitride semiconductor devices supported by device support substrate 40 and having a high mechanical strength and excellent characteristics.
  • The method for manufacturing a group III nitride semiconductor device in the present reference embodiment may specifically be performed through the following steps.
  • <Step of Growing Group III Nitride Layer>
  • Referring to FIG. 15 (A), in the step of growing at least one group III nitride layer 20 on group III nitride film 13 of group III nitride composite substrate 1, suitable methods for growing group III nitride layer 20 are gas phase methods such as MOVPE, MBE, HYPE, and sublimation method, as well as liquid phase methods such as flux method, in order to epitaxially grow group III nitride layer 20 having a high crystal quality, and a particularly suitable method is MOVPE.
  • The structure of group III nitride layer 20 varies depending on the type of group III nitride semiconductor device 4. In the case where group III nitride semiconductor device 4 is a light-emitting device, group III nitride layer 20 may be configured by successively growing, on group III nitride film 13, for example, an n-GaN layer 21, an n-In0.05Ga0.95N layer 22, an active layer 23 having a multiple quantum well structure, a p-Al0.09Ga0.91N layer 24, and a p-GaN layer 25.
  • In this way, at least one group III nitride layer 20 is grown on group III nitride film 13 of group III nitride composite substrate 1, and accordingly laminated group III nitride composite substrate 2 is obtained.
  • <Step of Bonding Device Support Substrate>
  • Referring to FIG. 15 (B), the step of bonding device support substrate 40 onto group III nitride layer 20 is performed by forming a first electrode 30 and a pad electrode 33 on group III nitride layer 20 of laminated group III nitride composite substrate 2, forming a pad electrode 43 and a joint metal film 44 on device support substrate 40, and bonding joint metal film 44 to pad electrode 33. Through these steps, laminated substrate 3 is obtained. As device support substrate 40, Si substrate, CuW substrate, or the like is used.
  • <Step of Removing Support Substrate>
  • Referring to FIG. 15 (C), the step of removing support substrate 11 from group III nitride composite substrate 1 is performed by removing support substrate 11 of group III nitride composite substrate 1 from laminated substrate 3. In the case where group III nitride composite substrate 1 includes joint film 12 interposed between support substrate 11 and group III nitride film 13, joint film 12 can also be removed. The method for removing support substrate 11 and joint film 12 is not particularly limited, and suitable methods to be used are grinding, etching, and the like. For example, support substrate 11 formed of a material which is low in hardness, strength, and wear resistance, and is likely to be ground off, can be removed by at least one of grinding and polishing, in order to reduce the manufacturing cost. Support substrate 11 formed of a material which can be dissolved in a chemical solution such as acid solution or alkali solution, can be removed through etching with a chemical solution, since it requires low manufacturing cost. As support substrate 11, a support substrate formed of a polycrystalline material such as ceramic material is more preferred as compared with a support substrate formed of a monocrystalline material such as sapphire, SiC, group III nitride (such as GaN), or the like, since the support substrate 11 of the polycrystalline material is easier to remove.
  • <Step of Forming Electrode>
  • Referring to FIG. 15 (D), on group III nitride film 13 which has been exposed after removal of support substrate 11 and joint film 12 from laminated substrate 3, a second electrode 50 is formed and, on device support substrate 40, a device support substrate electrode 45 is formed.
    • Reference Invention II
  • Reference Invention II relates to a low-cost and large-diameter group III nitride composite substrate which includes a thick group III nitride film and has a small temperature variation on a main surface when a group III nitride layer is grown, to enable reduction of the cost of manufacturing a semiconductor device and enable group III nitride semiconductor devices to be manufactured with a high yield. It also relates to a method for manufacturing the group III nitride composite substrate, a laminated group III nitride composite substrate, as well as a group III nitride semiconductor device and a method for manufacturing the same.
  • [Background Art Regarding Reference Invention II]
  • Group III nitrides such as GaN have superior semiconductor properties and are therefore used as materials suitable for semiconductor devices. In addition, group III nitrides such as GaN have excellent material characteristics different from those of Si, GaAs, SiC, or the like for different types of semiconductor devices such as light-emitting device and electronic device for example, and can therefore be used for a variety of devices.
  • For example, Japanese Patent Laying-Open No. 2009-126722 discloses a free-standing group III nitride substrate to be used as a substrate for a semiconductor device. The free-standing group III nitride substrate has a diameter of 25 mm or more and 160 mm or less and a thickness of 100 μm or more and 1000 μm or less. It discloses, as a specific example thereof, a free-standing GaN substrate having a diameter of 100 mm and a thickness of 400 μm.
  • Japanese Patent Laying-Open No. 2008-010766 discloses a GaN-thin-film-bonded substrate to be used as a substrate for manufacturing a semiconductor device. The GaN-thin-film-bonded substrate includes a heterogeneous substrate whose chemical composition is different from that of GaN, and a GaN thin film having a thickness of 0.1 μm or more and 100 μm or less and bonded to the heterogeneous substrate. It discloses, as a specific example thereof, a GaN-thin-film-bonded substrate having a diameter of 50.8 mm and including a sapphire substrate and a GaN thin film having a thickness of 0.1 μm or 100 μm and bonded to the sapphire substrate.
  • Japanese Patent Laying-Open No. 2010-182936 discloses a composite substrate to be used as a substrate for a semiconductor device. The composite substrate includes a support substrate, a nitride semiconductor layer, and a joint layer disposed between the support substrate and the nitride semiconductor layer. It discloses, as a specific example thereof, a composite substrate having a diameter of 50.8 mm and including a sapphire substrate, a GaN layer, and a joint layer formed by press fitting between the substrate and the GaN layer, in which the GaN layer has a thickness of 5 μm to 220 μm.
  • [Problems to be Solved by Reference Invention II]
  • The free-standing group III nitride substrate disclosed in Japanese Patent Laying-Open No. 2009-126722 involves problems that the substrate is manufactured at high cost and therefore very expensive, and that the substrate is likely to crack, resulting in difficulty in increasing the diameter of the substrate and decreasing the thickness thereof. Further, it is necessary to reduce the thickness of the free-standing group III nitride substrate when a semiconductor device is to be formed, which is accompanied by a problem of an increase in manufacturing cost due to a process step such as grinding of the rear surface (a main surface opposite to a main surface on which a group III nitride layer is formed for implementing device functions, and this definition of the rear surface is applied hereinafter) of the free-standing group III nitride substrate.
  • Regarding the GaN-thin-film-bonded substrate having the GaN thin film of 0.1 μm in thickness as disclosed in Japanese Patent Laying-Open No. 2008-010766, ion implantation is performed to form the GaN thin film, which, however, involves a problem that the ion implantation degrades the crystal quality of the GaN thin film. In order to enhance the characteristics of the semiconductor device to be formed, the thickness of the GaN thin film is preferably 10 μm or more. An increase in thickness of the GaN thin film, however, involves a problem that the variation in depth to which ions are implanted from the main surface increases, which accordingly increases the variation in thickness of the GaN thin film in the resultant GaN-thin-film-bonded substrate.
  • Moreover, the GaN-thin-film composite substrate disclosed in Japanese Patent Laying-Open No. 2008-010766 and the composite substrate disclosed in Japanese Patent Laying-Open No. 2010-182936 are each a composite substrate in which a film or layer of group III nitride is joined onto a support substrate, and are therefore likely to have a large temperature variation on the main surface of the substrate when the group III nitride layer is formed on the substrate for manufacturing a group III nitride semiconductor device, as compared with the free-standing group III nitride substrate disclosed in Japanese Patent Laying-Open No. 2009-126722. Accordingly, the above-referenced composite substrates suffer from a problem of difficulty in increasing the yield of semiconductor devices to be manufactured, if the diameter of the substrate is increased.
  • An object of Reference Invention II is to solve the above problems and thereby provide a low-cost and large-diameter group III nitride composite substrate which includes a thick group III nitride film and has a small temperature variation (namely unevenness, and this definition of the variation is applied hereinafter) on a main surface when a group III nitride layer is grown, to enable reduction of the cost of manufacturing a semiconductor device and enable group III nitride semiconductor devices to be manufactured with a high yield, and provide a method for manufacturing the group III nitride composite substrate, a laminated group III nitride composite substrate, as well as a group III nitride semiconductor device and a method for manufacturing the same.
  • [Solution to the Problems]
  • According to an aspect, Reference Invention II provides a group III nitride composite substrate with a diameter of 75 mm or more including a support substrate and a group III nitride film having a thickness of 10 μm or more and 250 μm or less that are bonded to each other, a mean value mS of a root mean square roughness of a support-substrate-side main surface being 0.3 nm or more and 20 nm or less, and a ratio sS/mS of a standard deviation sS of the root mean square roughness, to the mean value mS of the root mean square roughness of the support-substrate-side main surface, being 0.005 or more and 0.4 or less.
  • Regarding the group III nitride composite substrate according to the above aspect of Reference Invention II, a mean value mIII-N of a root mean square roughness of a group III-nitride-film-side main surface may be 0.15 nm or more and 3 nm or less, and a ratio sIII-N/mIII-N of a standard deviation sIII-N of the root mean square roughness, to the mean value mIII-N of the root mean square roughness of the group III-nitride-film-side main surface, may be 0.008 or more and 0.5 or less. A ratio W/D of a warp W of the support-substrate-side main surface to the diameter D may be −7×10−4 or more and 8×10−4 or less. A ratio αIII-N/αs of a thermal expansion coefficient αIII-N of the group III nitride film to a thermal expansion coefficient αS of the support substrate may be 0.75 or more and 1.25 or less, and a ratio tIII-N/tS of a thickness tIII-N of the group III nitride film to a thickness tS of the support substrate may be 0.02 or more and 1 or less. The support substrate may have a thermal conductivity λS of 3 W·m−1·K−1 or more and 280 W·m−1·K−1 or less. The support substrate may have a Young's modulus ES of 150 GPa or more and 500 GPa or less. The diameter may be 100 mm or more. Further, the diameter may be 125 mm or more and 300 mm or less.
  • According to another aspect, Reference Invention II provides a laminated group III nitride composite substrate including the group III nitride composite substrate according to the above aspect, and at least one group III nitride layer disposed on the group III-nitride-film-side main surface of the group III nitride composite substrate.
  • According to still another aspect, Reference Invention II provides a group III nitride semiconductor device including the group III nitride film in the group III nitride composite substrate according to the above aspect, and at least one group III nitride layer disposed on the group III nitride film.
  • According to a further aspect, Reference Invention II provides a method for manufacturing a group III nitride composite substrate according to the above aspect, including the steps of: forming a joined substrate with a diameter of 75 mm or more by bonding a support substrate and a group III nitride film donor substrate to each other; forming the group III nitride composite substrate by cutting the group III nitride film donor substrate in the joined substrate along a plane located inwardly at a predetermined distance from a bonded main surface of the group III nitride film donor substrate; and adjusting the root mean square roughness of the support-substrate-side main surface by polishing the support-substrate-side main surface of the group III nitride composite substrate before, in, or after any one of the above steps.
  • According to a still further aspect, Reference Invention II provides a method for manufacturing a group III nitride composite substrate according to the above aspect, including the steps of: forming a joined substrate with a diameter of 75 mm or more by bonding a support substrate and a group III nitride film donor substrate to each other; forming the group III nitride composite substrate by performing at least one of grinding, polishing, and etching on a main surface of the group III nitride film donor substrate in the joined substrate, the main surface being opposite to a bonded main surface of the group III nitride film donor substrate; and adjusting the root mean square roughness of the support-substrate-side main surface by polishing the support-substrate-side main surface of the group III nitride composite substrate before, in, or after any one of the above steps.
  • According to a still further aspect, Reference Invention II provides a method for manufacturing a group III nitride semiconductor device, including the steps of: preparing a group III nitride composite substrate according to the above aspect; and growing at least one group III nitride layer on a group III-nitride-film-side main surface of the group III nitride composite substrate.
  • The method for manufacturing a group III nitride semiconductor device according to this aspect of Reference Invention II may further include the step of removing the support substrate from the group III nitride composite substrate, after the step of growing the group III nitride layer. It may further include the step of bonding a device support substrate onto the group III nitride layer, after the step of growing the group III nitride layer and before the step of removing the support substrate.
  • [Effects of Reference Invention II]
  • Reference Invention II can provide a low-cost and large-diameter group III nitride composite substrate which includes a thick group III nitride film and has a small temperature variation on a main surface when a group III nitride layer is grown, to enable reduction of the cost of manufacturing a semiconductor device and enable group III nitride semiconductor devices to be manufactured with a high yield, and provide a method for manufacturing the group III nitride composite substrate, a laminated group III nitride composite substrate, as well as a group III nitride semiconductor device and a method for manufacturing the same.
    • Reference Embodiment II-1 Group III Nitride Composite Substrate
  • Referring to FIG. 6, a group III nitride composite substrate 1 which is a reference embodiment of Reference Invention II is a group III nitride composite substrate 1 with a diameter of 75 mm or more including a support substrate 11 and a group III nitride film 13 having a thickness of 10 μm or more and 250 μm or less that are bonded to each other, a mean value mS of a root mean square roughness (hereinafter also referred to as RMS) of a support-substrate 11-side main surface 11 n, which is a main surface on the support-substrate side, is 0.3 nm or more and 20 nm or less, and a ratio sS/mS of a standard deviation sS of the RMS, to the mean value mS of the RMS of support-substrate 11-side main surface 11 n, is 0.005 or more and 0.4 or less.
  • Regarding group III nitride composite substrate 1 in the present reference embodiment, the temperature variation (namely unevenness) on the main surface is small when a group III nitride layer is grown for manufacturing a group III nitride semiconductor device, and therefore, the group III nitride layer having a high crystal quality can be grown. Thus, high-quality group III nitride semiconductor devices can be manufactured with a high yield. This will be described in more detail in the following.
  • Referring to FIGS. 6 and 8, group III nitride composite substrate 1 in the present reference embodiment has a structure in which group III nitride film 13 is bonded onto support substrate 11. When a group III nitride semiconductor device is manufactured, a susceptor (not shown) including a temperature raising apparatus is arranged so that support-substrate 11-side main surface 11 n, which corresponds to the rear side of group III nitride composite substrate 1, is opposite to a main surface of the susceptor, and at least one group III nitride layer 20 is grown on a group III-nitride-film 13-side main surface 13 m, which corresponds to the front side of group III nitride composite substrate 1.
  • Group III nitride composite substrate 1 in the present reference embodiment has a diameter of 75 mm or more, group III nitride film 13 bonded onto support substrate 11 of the composite substrate has a thickness of 10 μm or more and 250 μm or less, mean value mS of the RMS of support-substrate 11-side main surface 11 n is 0.3 nm or more and 20 nm or less, and a ratio sS/mS of standard deviation sS of the RMS, to mean value mS of the RMS of support-substrate 11-side main surface 11 n is 0.005 or more and 0.4 or less. Thus, heat is uniformly transmitted from the main surface of the susceptor whose temperature has been raised, to the whole of support-substrate 11-side main surface 11 n which is the rear side of large-diameter group III nitride composite substrate 1 and has a small average and variation of the RMS. Therefore, group III nitride composite substrate 1 with a large diameter is entirely heated uniformly. Accordingly, a small and uniform temperature variation on the group III-nitride-film 13-side main surface 13 m, which is the front side of group III nitride composite substrate 1 of a large diameter, is obtained. Thus, on group III-nitride-film 13-side main surface 13 m of large-diameter group III nitride composite substrate 1, uniform and large-diameter group III nitride layer 20 having a high crystal quality can be grown, and therefore, group III nitride semiconductor devices having excellent characteristics can be manufactured with a high yield.
  • Referring to FIG. 6, the manner in which support substrate 11 and group III nitride film 13 are bonded to each other in group III nitride composite substrate 1 is not particularly limited. In order to increase the joint strength of the bonding, however, it is preferable to provide a joint film 12 between the support substrate and the group III nitride film.
  • <Thickness of Group III Nitride Film>
  • Referring to FIGS. 6 and 7, the thickness of group III nitride film 13 of group III nitride composite substrate 1 in the present reference embodiment is 10 μm or more and 250 μm or less. Here, the thickness of group III nitride film 13 refers to the mean value calculated from the thicknesses measured at 13 measurement points on main surface 13 m of group III nitride film 13 shown in FIG. 7. The 13 measurement points P on the main surface of group III nitride film 13 shown in FIG. 7 are constituted, regardless of the magnitude of the diameter of the group III nitride film: one central point PC; four outer points PO located respectively in the four directions with respect to central point PC that are orthogonal to each other, the outer points each being located at 5 mm inward from the outer edge of the substrate; and eight middle points PM including four middle points each between the one central point PC and one of the four outer points PO and four middle points each between two of the four outer points PO.
  • In order to grow a group III nitride layer having a high crystal quality, group III nitride film 13 needs a thickness of 10 μm or more, preferably 30 μm or more, more preferably 80 μm or more, and still more preferably 100 μm or more. Meanwhile, in order to reduce the cost of the material for group III nitride composite substrate 1, group III nitride film 13 needs a thickness of 250 μm or less, preferably 200 μm or less, more preferably 180 or less, and still more preferably 130 μm or less.
  • <Diameter of Group III Nitride Composite Substrate>
  • Referring to FIG. 6, group III nitride composite substrate 1 in the present reference embodiment has a diameter of 75 mm or more. In order to produce a greater number of semiconductor device chips from one composite substrate, group III nitride composite substrate 1 needs a diameter of 75 mm or more, preferably 100 mm or more, more preferably 125 mm or more, and still more preferably 150 mm or more. Meanwhile, in order to reduce the warp of the composite substrate and increase the yield of semiconductor devices, the diameter of group III nitride composite substrate 1 is preferably 300 mm or less, and more preferably 200 mm or less.
  • <RMS of Support-Substrate-Side Main Surface>
  • Referring to FIGS. 6 and 7, group III nitride composite substrate 1 in the present reference embodiment has a mean value mS of the RMS of support-substrate 11-side main surface 11 n of 0.3 nm or more and 20 nm or less, and a ratio sS/mS of standard deviation sS of the RMS to mean value mS of the RMS of support-substrate 11-side main surface 11 n of 0.005 or more and 0.4 or less.
  • Regarding support-substrate 11-side main surface 11 n which is the rear side of group III nitride composite substrate 1, in order to grow a uniform group III nitride layer having a high quality on group III-nitride-film 13-side main surface 13 m of group III nitride composite substrate 1, support-substrate 11-side main surface 11 n needs a mean value mS of the RMS of 20 nm or less, preferably 10 nm or less, and more preferably 5 nm or less, and a ratio sS/mS of standard deviation sS of the RMS to mean value mS of the RMS of 0.4 or less, preferably 0.3 or less, and more preferably 0.2 or less.
  • Regarding support-substrate 11-side main surface 11 n which is the rear side of group III nitride composite substrate 1, in order to reduce the cost of surface treatment of main surface 11 n, support-substrate 11-side main surface 11 n needs a mean value mS of the RMS of 0.3 nm or more, preferably 0.5 nm or more, and more preferably 1 nm or more, and a ratio sS/mS of standard deviation sS of the RMS to mean value mS of the RMS of 0.005 or more, preferably 0.01 or more, and more preferably 0.05 or more.
  • Referring to FIG. 7, mean value mS and standard deviation sS of the RMS of support-substrate 11-side main surface 11 n of group III nitride composite substrate 1 are respectively the arithmetic mean and the standard deviation that are calculated from the RMS measured at the 13 measurement points P on main surface 11 n of support substrate 11. The 13 measurement points P on main surface 11 n of support substrate 11 shown in FIG. 7 are constituted, regardless of the magnitude of the diameter of support substrate 11: one central point PC; four outer points PO located respectively in the four directions with respect to central point PC that are orthogonal to each other, the outer points each being located at 5 mm inward from the outer edge of the substrate; and eight middle points PM including four middle points each between the one central point PC and one of the four outer points PO and four middle points each between two of the four outer points PO. The standard deviation refers to the positive square root of unbiased variance.
  • The RMS measured at the 13 measurement points P on main surface 11 n of support substrate 11 shown in FIG. 7 refers to the positive square root of the mean of respective squares of the distances to the points from a reference plane which is calculated from each point in a measurement region having a size of 85 μm×85 μm in which measurement point P is located at the center, and is measured by means of an AFM (Atomic Force Microscope), an interferometric roughness meter, a laser microscope, a stylus-based roughness meter, or the like.
  • It should be noted that mean value mS and standard deviation sS of the RMS of support-substrate 11-side main surface 11 n of group III nitride composite substrate 1 can be adjusted, as described later herein, by physical properties of abrasives, a surface plate, and a polishing pad for polishing main surface 11 n of support substrate 11, the shapes of the surface plate and the polishing pad, and polishing conditions.
  • <RMS of Group III-Nitride-Film-Side Main Surface>
  • Referring to FIGS. 6 and 7, group III nitride composite substrate 1 in the present reference embodiment preferably has a mean value mIII-N of the RMS of group III-nitride-film 13-side main surface 13 m of 0.15 nm or more and 3 nm or less, and preferably has a ratio sIII-N/mIII-N of standard deviation of the RMS to mean value of the RMS of group III-nitride-film 13-side main surface 13 m of 0.008 or more and 0.5 or less.
  • Regarding group III-nitride-film 13-side main surface 13 m which is the front side of group III nitride composite substrate 1, in order to grow a uniform group III nitride layer having a high crystal quality on main surface 13 m, mean value of the RMS is preferably 3 nm or less, more preferably 2 nm or less, and still more preferably 1.6 nm or less, and ratio sIII-N/mIII-N of standard deviation sIII-N of the RMS to mean value mIII-N of the RMS is preferably 0.5 or less, more preferably 0.4 or less, and still more preferably 0.2 or less.
  • Further, regarding group III-nitride-film 13-side main surface 13 m which is the front side of group III nitride composite substrate 1, in order to reduce the cost of surface treatment of main surface 13 m, mean value mIII-N of the RMS is preferably 0.15 nm or more, more preferably 0.4 nm or more, and still more preferably 0.8 nm or more, and ratio sIII-N/mIII-N of standard deviation sIII-N of the RMS to mean value mIII-N of the RMS is preferably 0.008 or more, more preferably 0.02 or more, and still more preferably 0.05 or more.
  • Referring to FIG. 7, mean value mIII-N and standard deviation sIII-N of the RMS of group III-nitride-film 13-side main surface 13 m of group III nitride composite substrate 1 are respectively the arithmetic mean and the standard deviation that are calculated from the RMS measured at the 13 measurement points P on main surface 13 m of group III nitride film 13. The 13 measurement points P on main surface 13 m of group III nitride film 13 shown in FIG. 7 are constituted, regardless of the magnitude of the diameter of group III nitride film 13: one central point PC; four outer points PO located respectively in the four directions with respect to central point PC that are orthogonal to each other, the outer points each being located at 5 mm inward from the outer edge of the substrate; and eight middle points PM including four middle points each between the one central point PC and one of the four outer points PO and four middle points each between two of the four outer points PO. The standard deviation refers to the positive square root of unbiased variance.
  • The RMS measured at the 13 measurement points P on main surface 13 m of group III nitride film 13 shown in FIG. 7 refers to the positive square root of the mean of respective squares of the distances to the points from a reference plane which is calculated from each point in a measurement region having a size of 85 μm×85 μm in which measurement point P is located at the center, and is measured by means of an AFM (Atomic Force Microscope), an interferometric roughness meter, a laser microscope, a stylus-based roughness meter, or the like.
  • It should be noted that mean value mIII-N and standard deviation sIII-N of the RMS of group III-nitride-film 13-side main surface 13 m of group III nitride composite substrate 1 can be adjusted, as described later herein, by physical properties of abrasives, a surface plate, and a polishing pad for polishing main surface 13 m of group III nitride film 13, the shapes of the surface plate and the polishing pad, and polishing conditions.
  • <Ratio of Warp of Support-Substrate-Side Main Surface to Diameter>
  • Referring to FIG. 6, regarding group III nitride composite substrate 1 in the present reference embodiment, a ratio W/D of a warp W of support-substrate 11-side main surface 11 n to a diameter D is preferably −7×10−4 or more and 8×10−4 or less, more preferably −4×10−4 or more and 5×10−4 or less, still more preferably −2.5×10−4 or more and 3×10−4 or less, and particularly preferably −1×10−4 or more and 1.5×10−4 or less. Regarding the signs for warp W and ratio W/D, a concave warp of support-substrate 11-side main surface 11 n is herein indicated with the + (positive) sign, and a convex warp of support-substrate 11-side main surface 11 n is herein indicated with the − (negative) sign. If ratio W/D of warp W of support-substrate 11-side main surface 11 n to diameter D of group III nitride composite substrate 1 is a small value of preferably −7×10−4 or more and 8×10−4 or less, more preferably −4×10−4 or more and 5×10−4 or less, still more preferably −2.5×10−4 or more and 3×10−4 or less, and particularly preferably −1×10−4 or more and 1.5×10−4 or less, heat is uniformly transmitted to the whole of support-substrate 11-side main surface 11 n of large-diameter group III nitride composite substrate 1, from the main surface of the susceptor with its temperature increased, when a group III nitride layer is grown on group III-nitride-film 13-side main surface 13 m of group III nitride composite substrate 1, and therefore, the whole of group III nitride composite substrate 1 is uniformly heated. Accordingly, the temperature on group III-nitride-film 13-side main surface 13 m which is the front side of group III nitride composite substrate 1 has a small variation and uniformity. Thus, a uniform and large-diameter group III nitride layer having a high crystal quality can be grown on group III-nitride-film 13-side main surface 13 m of group III nitride composite substrate 1. Accordingly, group III nitride semiconductor devices having excellent characteristics can be manufactured with a high yield.
  • <Ratio of Thermal Expansion Coefficient of Group III Nitride Film to Thermal Expansion Coefficient of Support Substrate>
  • Referring to FIG. 6, regarding group III nitride composite substrate 1 in the present reference embodiment, in order to suppress warp and cracks of group III nitride composite substrate 1 and of a group III nitride layer grown on group III nitride film 13 and thereby increase the yield of group III nitride semiconductor devices, a ratio αIII-N/αS of a thermal expansion coefficient αIII-N of group III nitride film 13 to a thermal expansion coefficient αS of support substrate 11 is preferably 0.75 or more and 1.25 or less, more preferably 0.85 or more and 1.15 or less, and still more preferably 0.95 or more and 1.05 or less. Thermal expansion coefficient αS of support substrate 11 and thermal expansion coefficient αIII-N of group III nitride film 13 can be measured with a thermomechanical analysis apparatus.
  • <Ratio of Thickness of Group III Nitride Film to Thickness of Support Substrate>
  • Referring to FIG. 6, regarding group III nitride composite substrate 1 in the present reference embodiment, in order to suppress warp and cracks of group III nitride composite substrate 1 and of a group III nitride layer grown on group III nitride film 13 and thereby increase the yield of group III nitride semiconductor devices, a ratio tIII-N/tS of a thickness tIII-N of group III nitride film 13 to a thickness tS of support substrate 11 is preferably 0.02 or more and 1 or less, more preferably 0.1 or more and 0.6 or less, and still more preferably 0.2 or more and 0.4 or less. Thickness tS of support substrate 11 and thickness tIII-N of group III nitride film 13 can be measured through observation of a cross section of the film with an optical microscope and/or an SEM or with a digital indicator, or the like.
  • Thus, in order to suppress warp and cracks of group III nitride composite substrate 1 and a group III nitride layer grown on group III nitride film 13 and thereby increase the yield of group III nitride semiconductor devices, ratio αIII-N/αS of thermal expansion coefficient αIII-N of group III nitride film 13 to thermal expansion coefficient as of support substrate 11 is preferably 0.75 or more and 1.25 or less, and ratio tIII-N/tS of a thickness of the group III nitride film to thickness tS of support substrate 11 is preferably 0.02 or more and 1 or less. It is more preferable that ratio tIII-N/αS is 0.85 or more and 1.15 or less and ratio tIII-N/tS is 0.1 or more and 0.6 or less, and it is further preferable that ratio αIII-N/αS is 0.95 or more and 1.05 or less and ratio tIII-N/tS is 0.2 or more and 0.4 or less.
  • <Support Substrate>
  • Support substrate 11 included in group III nitride composite substrate 1 in the present reference embodiment is not particularly limited as long as support substrate 11 can support group III nitride film 13. In order to reduce the amount of use of the expensive group III nitride to thereby lower the cost, however, the support substrate is preferably a hetero-composition substrate whose chemical composition is different from that of the group III nitride.
  • As described above, group III nitride composite substrate 1 in the present reference embodiment preferably has a ratio αIII-N/αS of thermal expansion coefficient αIII-N of group III nitride film 13 to thermal expansion coefficient αS of support substrate 11 of 0.75 or more and 1.25 or less.
  • Regarding group III nitride composite substrate 1 in the present reference embodiment, thermal conductivity λS of support substrate 11 is preferably 3 W·m−1·K−1 or more and 280 W·m−1·K−1 or less, more preferably 5 W·m−1·K−1 or more and 210 W·m−1·K−1 or less, and still more preferably 10 W·m−1·K−1 or more and 120 W·m−1·K−1 or less. Here, thermal conductivity λS of support substrate 11 can be measured by a laser flash method. Group III nitride composite substrate 1 having support substrate 11 with a thermal conductivity λS of preferably 3 W·m−1·K−1 or more, more preferably 5 W·m−1·K−1 or more, and still more preferably 10 W·m−1·K−1 or more, can efficiently transmit heat from the main surface of the susceptor to main surface 13 m of group III nitride film 13 of group III nitride composite substrate 1, when a group III nitride layer is grown. Group III nitride composite substrate 1 having support substrate 11 with a thermal conductivity λS of preferably 280 W·m−1·K−1 or less, more preferably 210 W·m−1·K−1 or less, still more preferably 120 W·m−1·K−1 or less, and particularly preferably 50 W·m−1·K−1 or less, can uniformly transmit heat from the main surface of the susceptor to the whole main surface of group III nitride film 13 of group III nitride composite substrate 1, when a group III nitride layer is grown. Support substrate 11 having a thermal conductivity λS of 280 W·m−1·K−1 or less can more uniformly transmit the heat from the main surface of the susceptor to the whole main surface of group III nitride film 13 of group III nitride composite substrate 1 when a group III nitride layer is grown, as compared with the case where an SiC substrate having a thermal conductivity λS of about 300 W·m−1·K−1 is used as the support substrate.
  • Regarding group III nitride composite substrate 1 in the present reference embodiment, support substrate 11 has a Young's modulus ES of preferably 150 GPa or more and 500 GPa or less, and more preferably 200 GPa or more and 350 GPa or less. Here, Young's modulus ES of support substrate 11 can be measured by a resonance method. Group III nitride composite substrate 1 having support substrate 11 with a Young's modulus ES of preferably 150 GPa or more and more preferably 200 GPa or more can suppress occurrence of warp to group III nitride composite substrate 1 and/or a group III nitride layer, when a group III nitride semiconductor device is formed by growing the group III nitride layer on the composite substrate. Group III nitride composite substrate 1 having support substrate 11 with a Young's modulus ES of preferably 500 GPa or less and more preferably 350 GPa or less can suppress occurrence of warp and/or cracks to group III nitride composite substrate 1 and/or a group III nitride layer, when a group III nitride semiconductor device is formed by growing the group III nitride layer on the composite substrate.
  • Support substrate 11 is not particularly limited. In view of the above-described respects, however, support substrate 11 preferably satisfies at least one of: ratio αIII-N/αS of thermal expansion coefficient αIII-N of group III nitride film 13 to thermal expansion coefficient αS of support substrate 11 is 0.75 or more and 1.25 or less; support substrate 11 has a thermal conductivity λS of 3 W·m−1·K−1 or more and 280 W·m−1·K−1 or less; and support substrate 11 has a Young's modulus ES of 150 GPa or more and 500 GPa or less. Support substrate 11 is preferably a substrate formed of mullite (3Al2O3.2SiO2-2Al2O3.SiO2), a substrate formed of mullite-YSZ (Yttria Stabilized Zirconia), a substrate formed of spinel (MgAl2O4), a substrate formed of a sintered body of an Al2O3—SiO2-based composite oxide, and substrates formed respectively of sintered bodies of them to which oxide, carbonate or the like is added, a molybdenum (Mo) substrate, a tungsten (W) substrate, or the like. Here, preferred elements to be contained in the oxide and the carbonate are Ca, Mg, Sr, Ba, Al, Sc, Y, Ce, Pr, Si, Ti, Zr, V, Nb, Ta, Cr, Mn, Fe, Co, Ni, Cu, Zn, and the like.
  • Support substrate 11 may include any of single crystal, polycrystal, and amorphous material. It preferably includes polycrystal, since removal by grinding or etching when a device is to be formed is easy and the strength by which warp or cracks can be suppressed can be maintained.
  • <Joint Film>
  • Referring to FIG. 6, a joint film 12 which may be included in group III nitride composite substrate 1 in the present reference embodiment is not particularly limited as long as the joint film can join support substrate 11 and group III nitride film 13 to each other. Joint film 12, however, is preferably SiO2 film, Si3N4 film, TiO2 film, Ga2O3 film, or the like because these films have a high joining ability for joining support substrate 11 and group III nitride film 13 to each other.
  • <Group III Nitride Film>
  • Referring to FIG. 6, group III nitride film 13 in the present reference embodiment is a film formed of a group III nitride, specifically an InxAlyGa1-x-yN film (0≦x, 0≦y, x+y≦1) such as GaN film, AlN film, or the like.
  • In order to form a group III nitride semiconductor device having excellent characteristics, the thickness of group III nitride film 13 needs to be 10 μm or more, preferably 30 μm or more, more preferably 80 μm or more, and still more preferably 100 μm or more, as described above. Meanwhile, in order to reduce the amount of use of the expensive group III nitride, the thickness of group III nitride film 13 is 250 μm or less, preferably 200 μm or less, more preferably 180 μm or less, and particularly preferably 130 μm or less, as described above.
  • The crystal structure of group III nitride film 13 is preferably the wurtzite structure, since it enables semiconductor devices having excellent characteristics to be produced. The predetermined plane orientation to which the main surface of group III nitride film 13 is closest is not limited as long as it is suitable for a desired semiconductor device, and may be any of {0001}, {10-10}, {11-20}, {21-30}, {20-21}, {10-11}, {11-22}, and {22-43}, as well as plane orientations that are 15° or less off (displaced by an angle of 15° or less) from these plane orientations, respectively. It may also be any of the plane orientations opposite to the above-listed plane orientations, as well as plane orientations that are 15° or less off from these plane orientations, respectively. Namely, main surface 13 m of group III nitride film 13 may be any of polar plane, nonpolar plane, and semipolar plane. Main surface 13 m of group III nitride film 13 is preferably the {0001} plane and the opposite plane thereof, since such planes make it easy to increase the diameter, or any of {10-10} plane, {20-21} plane, and the opposite planes thereof, since such planes suppress blue shift of a light-emitting device to be produced.
  • In order to enhance the crystal quality of a group III nitride layer to be grown on group III nitride film 13 and enhance the characteristics of semiconductor devices to be formed, impurity metal atoms of main surface 13 m of group III nitride film 13 are preferably 1×1013 atoms/cm2 or less, more preferably 3×1012 atoms/cm2 or less, still more preferably 1×1012 atoms/cm2 or less, and particularly preferably 1×1011 atoms/cm2 or less.
  • Group III nitride composite substrate 1 which includes support substrate 11 such as a substrate of mullite (3Al2O3.2SiO2-2Al2O3.SiO2), mullite-YSZ (Yttria Stabilized Zirconia), spinel (MgAl2O4), a sintered body of an Al2O3—SiO2-based composite oxide, or the like is preferably subjected to cleaning that suppresses elution of metal atoms from support substrate 11, such as scrub cleaning with a surfactant and/or pure water, two-fluid cleaning, or megasonic cleaning (cleaning with ultrasonic waves in a megasonic frequency range of 500 kHz to 5 MHz), as well as cleaning of a single side (the single side is main surface 13 m of group III nitride film 13) such as sheet-fed cleaning with low-concentration acid and/or alkali, for example, to thereby reduce the concentration of impurity metal atoms in main surface 13 m of group III nitride film 13. A protective film can also be formed on the support substrate to suppress elution of metal atoms.
  • Regarding impurities other than impurity metal atoms in main surface 13 m of group III nitride film 13, in order to enhance the crystal quality of a group III nitride layer grown on group III nitride film 13 and enhance the characteristics of a semiconductor device to be formed, the impurities are preferably Cl atoms of 2×1014 atoms/cm2 or less, preferably Si atoms of 9×1013 atoms/cm2 or less. The dislocation density of group III nitride film 13 is not particularly limited. In order to reduce leak current of the semiconductor device, the dislocation density is preferably 1×108 cm−2 or less, and more preferably 1×107 cm−2 or less. The carrier concentration of group III nitride film 13 is not particularly limited. In order to reduce the resistance of the semiconductor device, the carrier concentration is preferably 1×1017 cm−3 or more, and more preferably 1×1018 cm−3 or more.
    • Reference Embodiment II-2 Laminated Group III Nitride Composite Substrate
  • Referring to FIG. 8, a laminated group III nitride composite substrate 2 which is another reference embodiment of Reference Invention II includes group III nitride composite substrate 1 of Reference Embodiment II-1, and at least one group III nitride layer 20 disposed on group III-nitride-film 13-side main surface 13 m of group III nitride composite substrate 1.
  • Laminated group III nitride composite substrate 2 in the present reference embodiment includes group III nitride composite substrate 1 having a small mean value mS and a small standard deviation sS of the RMS of support-substrate 11-side main surface 11 n, as well as group III nitride layer 20 having a high crystal quality grown and thereby disposed on composite substrate 1. Therefore, semiconductor devices having excellent characteristics can be produced with a high yield.
  • In laminated group III nitride composite substrate 2 of the present reference embodiment, group III nitride layer 20 disposed on group III-nitride-film 13-side main surface 13 m varies depending on the type of the semiconductor device to be produced. Referring to FIG. 9, in the case where the semiconductor device to be produced is a light-emitting device, group III nitride layer 20 may be configured to include, for example, an n-GaN layer 21, an n-In0.05Ga0.95N layer 22, an active layer 23 having a multiple quantum well structure, a p-Al0.09Ga0.91N layer 24, and a p-GaN layer 25. Referring to FIG. 10, in the case where the semiconductor device to be produced is an HEMT (High Electron Mobility Transistor) which is an example of electronic devices, group III nitride layer 20 may be configured to include, for example, a GaN layer 26 and an Al0.2Ga0.8N layer 27. Referring to FIG. 11, in the case where the semiconductor device to be produced is an SBD (Schottky Barrier Diode) which is another example of electronic devices, group III nitride layer 20 may be configured to include, for example, an n+-GaN layer 28 (having a carrier concentration for example of 2×1018 cm−3) and an n−-GaN layer 29 (having a carrier concentration for example of 5×1015 cm−3).
    • Reference Embodiment II-3 Group III Nitride Semiconductor Device
  • Referring to FIGS. 9 to 11, a group III nitride semiconductor device 4 which is still another reference embodiment of Reference Invention II includes group III nitride film 13 in the group III nitride composite substrate of Reference Embodiment II-1, and at least one group III nitride layer 20 disposed on group III nitride film 13.
  • Group III nitride semiconductor device 4 of the present reference embodiment includes group III nitride film 13 in group III nitride composite substrate 1 having a small mean value mS and a small standard deviation sS of the RMS of support-substrate 11-side main surface 11 n, as well as group III nitride layer 20 having a high crystal quality grown and thereby disposed on composite substrate 1. Therefore, semiconductor device 4 has excellent characteristics.
  • In group III nitride semiconductor device 4, group III nitride layer 20 varies depending on the type of group III nitride semiconductor device 4. Referring to FIG. 9, in the case where group III nitride semiconductor device 4 is a light-emitting device, group III nitride layer 20 may be configured to include, for example, an n-GaN layer 21, an n-In0.05Ga0.95N layer 22, an active layer 23 having a multiple quantum well structure, a p-Al0.09Ga0.91N layer 24, and a p-GaN layer 25. Referring to FIG. 10, in the case where group III nitride semiconductor device 4 is an HEMT which is an example of electronic devices, group III nitride layer 20 may be configured to include, for example, a GaN layer 26 and an Al0.2Ga0.8N layer 27. Referring to FIG. 11, in the case where group III nitride semiconductor device 4 is an SBD which is another example of electronic devices, group III nitride layer 20 may be configured to include, for example, an n+-GaN layer 28 (having a carrier concentration for example of 2×1018 cm−3) and an n−-GaN layer 29 (having a carrier concentration for example of 5×1015 cm−3). Other examples of electronic devices may include PND (PN diode), transistor, and the like. The above-described semiconductor devices may either be a vertical type or be a lateral type.
  • Referring to FIG. 9, preferably group III nitride semiconductor device 4 further includes at least one of support substrate 11 and a device support substrate 40 for supporting group III nitride layer 20. Here, the shape of device support substrate 40 is not limited to the shape of a flat plate, and may be any as long as it supports group III nitride film 13 and group III nitride layer 20 so that group III nitride semiconductor device 4 can be formed.
    • Reference Embodiment II-4 Method for Manufacturing Group III Nitride Composite Substrate Reference Embodiment II-4-1 A Method for Manufacturing Group III Nitride Composite Substrate
  • Referring to FIGS. 12 and 13, a method for manufacturing a group III nitride composite substrate which is a further reference embodiment of Reference Invention II is a method for manufacturing group III nitride composite substrate 1 of Reference Embodiment II-1, including the steps of: forming a joined substrate 1L, 1LS having a diameter of 75 mm or more by bonding support substrate 11 and a group III nitride film donor substrate 13D to each other (FIG. 12 (A) to (C) and FIG. 13 (A) to (C)); forming group III nitride composite substrate 1 by cutting group III nitride film donor substrate 13D in joined substrate 1L, 1LS along a plane located inwardly at a predetermined distance from the bonded main surface of group III nitride film donor substrate 13D (FIG. 12 (D), FIG. 13 (D)); and adjusting the RMS of support-substrate 11-side main surface 11 n by polishing support-substrate 11-side main surface 11 n of group III nitride composite substrate 1 before, in, or after any one of the above-described steps.
  • The method for manufacturing group III nitride composite substrate 1 in the present reference embodiment can efficiently manufacture low-cost and large-diameter group III nitride composite substrate 1 having a thick group III nitride film and a small temperature variation on the main surface when a group III nitride layer is grown, to enable group III nitride semiconductor devices to be manufactured with a high yield.
  • Here, in the step of forming group III nitride composite substrate 1, the predetermined distance of the plane located inwardly from the bonded main surface of group III nitride film donor substrate 13D, for cutting group III nitride film donor substrate 13D along the plane at this distance, is determined depending on the thickness of group III nitride film 13 of group III nitride composite substrate 1 to be manufactured.
  • In addition, in the step of forming group III nitride composite substrate 1, group III nitride film donor substrate 13D is cut to form group III nitride film 13, and thereafter at least one of grinding, polishing, and etching can be performed on the main surface 13 m of group III nitride film 13 opposite to bonded main surface 13 n thereof, to thereby reduce the thickness of group III nitride film 13. In particular, in order to reduce the thickness variation (namely unevenness) of group III nitride film 13 which is formed by cutting group III nitride film donor substrate 13D, it is preferable to polish the main surface of group III nitride film 13 in group III nitride composite substrate 1 obtained by cutting. In order to reduce the thickness variation of group III nitride film 13, the method for polishing is preferably precision polishing based on CMP (Chemical Mechanical Polishing), chemical polishing, or the like.
  • In view of the above respects, the predetermined distance of the plane located inwardly from bonded main surface 13 n of group III nitride film donor substrate 13D, for cutting group III nitride film donor substrate 13D along the plane at this distance, is preferably the sum determined by adding a polishing allowance, which is a portion to be removed away by polishing, to the thickness of group III nitride film 13 of group III nitride composite substrate 1 to be manufactured.
  • Regarding the method for manufacturing group III nitride composite substrate 1 of the present reference embodiment, group III nitride film donor substrate 13D is cut along a plane located inwardly at a predetermined distance from bonded main surface 13 n of group III nitride film donor substrate 13D in joined substrate 1L, 1LS, and preferably at least one of grinding, polishing, and etching is performed on the main surface 13 m which is opposite to bonded main surface 13 n of group III nitride film 13, to thereby adjust the film thickness by reducing it. Accordingly, group III nitride composite substrate 1 including group III nitride film 13 having a desired thickness of 10 μm or more and 250 μm or less can be obtained.
  • As for the method for manufacturing group III nitride composite substrate 1 of the present reference embodiment, in order to improve the workability and the efficiency of cutting group III nitride film donor substrate 13D in the step of forming the group III nitride composite substrate, the thickness of group III nitride film donor substrate 13D to be used is preferably larger than 500 μm, more preferably 1 mm or more, and still more preferably 2 mm or more.
  • <Step of Forming Joined Substrate>
  • Referring to FIG. 12 (A) to (C) and FIG. 13 (A) to (C), the step of forming joined substrate 1L, 1LS includes the sub step of forming a joint film 12 a on a main surface 11 m of support substrate 11 (FIG. 12 (A), FIG. 13 (A)), the sub step of forming a joint film 12 b on a main surface 13 n of group III nitride film donor substrate 13D (FIG. 12 (B), FIG. 13 (B)), and the sub step of bonding a main surface 12 am of joint film 12 a formed on main surface 11 m of support substrate 11 and a main surface 12 bn of joint film 12 b formed on main surface 13 n of group III nitride film donor substrate 13D to each other (FIG. 12 (C), FIG. 13 (C)).
  • Referring to FIG. 12 (A) and FIG. 13 (A), in the sub step of forming joint film 12 a on main surface 11 m of support substrate 11, joint film 12 a is to be integrated with joint film 12 b, which will be described later herein, to form joint film 12, and is made of the same material as joint film 12. The method for forming joint film 12 a is not particularly limited as long as the method is suitable for forming joint film 12 a. In order to efficiently form joint film 12 a of good quality, however, the method is preferably sputtering, CVD (Chemical Vapor Deposition), PLD (Pulsed Laser Deposition), MBE (Molecular Beam Epitaxy), electron-beam deposition, or the like. CVD is particularly preferred since it enhances the quality of the joint film and enhances the film deposition rate. Among different CVD methods, P-CVD (Plasma-Chemical Vapor Deposition), PE-CVD (Plasma Enhanced-Chemical Vapor Deposition), and the like are more preferred since they enable the film to be deposited at a low temperature and at a high deposition rate, LP-CVD (Low Pressure-Chemical Vapor Deposition) and the like are still more preferred since they enhance the film quality and facilitate mass production, and AP-CVD (Atmospheric Pressure-Chemical Vapor Deposition) and the like are still more preferred since they enable the film to be deposited at a higher deposition rate and they are excellent in productivity.
  • Further, in order to improve the joint strength, annealing may be performed after joint films 12 a, 12 b are formed and before they are joined together. This annealing can degas joint films 12 a, 12 b to thereby densify joint films 12 a, 12 b.
  • Furthermore, in order to increase the joint strength between support substrate 11 and group III nitride film donor substrate 13D, main surface 12 am of joint film 12 a is preferably mirror-polished (into a mirror-finished surface having an RMS of 0.3 nm or less). The method for polishing main surface 12 am of joint film 12 a is not particularly limited. For example, CMP (Chemical Mechanical Polishing) or the like is used. In order to improve the cleanliness of the joint film for the purpose of increasing the joint strength, non-abrasive polishing may be performed, after CMP, with a solution containing no abrasive. In order to enhance the effect of removing the abrasive, non-abrasive polishing may be performed by means of an alkali such as KOH, TMAH (tetramethylammonium hydroxide), or an acid such as HCl, HNO3, H2SO4. In addition, in order to improve the cleanliness of the joint film for the purpose of increasing the joint strength, scrub cleaning using sponge, brush, or the like may be performed. In addition, two-fluid cleaning, megasonic cleaning, ultrasonic cleaning, or the like may suitably be performed.
  • Referring to FIG. 12 (B) and FIG. 13 (B), in the sub step of forming joint film 12 b on main surface 13 n of group III nitride film donor substrate 13D, group III nitride film donor substrate 13D is a donor substrate which is to provide group III nitride film 13 in the subsequent sub step. The method for preparing this group III nitride film donor substrate 13D is not particularly limited. In order to produce group III nitride film donor substrate 13D of a high crystal quality, suitable methods are gas phase methods such as HYPE (Hydride Vapor Phase Epitaxy), MOVPE (Metal Organic Vapor Phase Epitaxy), MBE (Molecular Beam Epitaxy), and sublimation method, as well as liquid phase methods such as flux method, high nitrogen pressure solution method, ammonothermal method, and the like. Group III nitride film donor substrate 13D prepared in this way is not particularly limited. In order to provide group III nitride film 13 of a high crystal quality, the donor substrate preferably has a degree of crystal quality substantially identical to that of group III nitride film 13 to be provided.
  • The material and the method for forming joint film 12 b as well as polishing of a main surface 12 bn of joint film 12 b are similar to the material and the method for forming the above-described joint film 12 a as well as polishing of main surface 12 am of joint film 12 a.
  • Referring to FIG. 12 (C) and FIG. 13 (C), in the sub step of bonding main surface 12 am of joint film 12 a formed on main surface 11 m of support substrate 11 and main surface 12 bn of joint film 12 b formed on main surface 13 n of group III nitride film donor substrate 13D to each other, the method for bonding them together is not particularly limited. Suitable methods include: a direct bonding method according to which respective surfaces to be bonded to each other are cleaned, directly bonded together, and thereafter heated to approximately 600° C. to 1200° C. so that the joint films are joined together; a surface activated bonding method according to which the surfaces to be bonded to each other are cleaned, subjected to an activation treatment by means of plasma or ions, and thereafter joined together under a low-temperature atmosphere of room temperature (25° C. for example) to 400° C.; a high-pressure bonding method according to which the surfaces to be bonded to each other are cleaned with a chemical solution and pure water and thereafter subjected to a high pressure on the order of 0.1 MPa to 10 MPa so that the joint films are joined together; a high vacuum bonding method according to which the surfaces to be bonded to each other are cleaned with a chemical solution and pure water, and thereafter joined together under a high vacuum atmosphere on the order of 10−6 Pa to 10−3 Pa, and the like. Any of the above-referenced bonding methods can increase the temperature to approximately 600° C. to 1200° C. after the joint films are joined together to thereby further increase the joint strength. In particular, the surface activated bonding method, the high pressure bonding method, and the high vacuum bonding method exhibit a higher effect of increasing the joint strength through the heating to approximately 600° C. to 1200° C. after the joint films are joined together.
  • The above bonding causes joint film 12 a and joint film 12 b to be joined together and thereby integrated into joint film 12. Support substrate 11 and group III nitride film donor substrate 13D are joined together with joint film 12 interposed therebetween to thereby form joined substrate 1L, 1LS.
  • Respective main surfaces 12 am and 12 bn of joint films 12 a and 12 b to be bonded to each other can thus be activated before being bonded to each other, to thereby increase the joint strength. Activation of main surfaces 12 am and 12 bn to be bonded is not particularly limited. The surfaces are preferably activated through plasma treatment, ion treatment, chemical treatment by means of a chemical solution, cleaning, CMP treatment, and the like, since they have a high activation effect.
  • <Step of Forming Group III Nitride Composite Substrate>
  • Referring to FIG. 12 (D) and FIG. 13 (D), in the step of forming group III nitride composite substrate 1, group III nitride film donor substrate 13D is cut along a plane located inwardly at a predetermined distance from bonded main surface 13 n of group III nitride film donor substrate 13D in joined substrate 1L, 1LS. Accordingly, the donor substrate is separated into group III nitride film 13, which is joined to support substrate 11 with joint film 12 interposed therebetween, and a remaining group III nitride film donor substrate 13Dr. Thus, group III nitride composite substrate 1 in which support substrate 11 and group III nitride film 13 are bonded to each other with joint film 12 interposed therebetween is formed.
  • The method for cutting group III nitride film donor substrate 13D is not particularly limited, and may be any of the methods such as wire saw, blade saw, laser processing, electrical discharge processing, water jet, and the like.
  • As to cutting of group III nitride film donor substrate 13D by means of a wire saw, it is preferable to use a fixed-abrasive wire in order to flatly cut group III nitride film donor substrate 13D of a large diameter, and it is preferable to use a thin wire in order to reduce a cutting allowance, which is a portion to be removed away through cutting. For reduction of the cutting allowance, loose-abrasive processing is preferred. In addition, as to cutting of group III nitride film donor substrate 13D by means of a wire saw, it is preferable to increase the tension of the wire and increase the wire speed, in order to reduce bending of the wire caused by the cut resistance and thereby improve the thickness precision and the flatness. For this purpose, a high-rigidity wire saw apparatus is preferred.
  • It is also preferable to swing the wire and vibrate group III nitride film donor substrate 13D in synchronization therewith, in order to reduce the cut resistance and thereby improve the thickness precision and the flatness. Specifically, the cutting resistance can be reduced in the following manner. In the case where the wire saw is positioned at a right angle or an angle close thereto relative to the direction in which group III nitride film donor substrate 13D is cut, group III nitride film donor substrate 13D is moved along the direction in which it is cut. In the case where the wire saw is located at an angle further from the right angle relative to the direction in which group III nitride film donor substrate 13D is cut, group III nitride film donor substrate 13D is moved in the direction opposite to the direction in which it is cut.
  • The group III nitride such as GaN is more brittle and more prone to crack as compared with sapphire, SiC, and the like, and therefore cannot be cut appropriately by a cutting method similar to that used for sapphire and SiC. It is therefore necessary for cutting of the group III nitride to further reduce the cut resistance. In order to reduce the cut resistance and thereby enhance the thickness precision and the flatness, it is preferable that the resistance coefficient R (unit: N) is within an appropriate range, specifically a range of 4000 N or more and 5000 N or less. The resistance coefficient R (N) is represented by R=(η×Q×V)/(L×P×n) where η (unit: Pa·s) is the viscosity of a machining fluid for slicing, Q (unit: m3/s) is the flow rate of the machining fluid, V (unit: m/s) is the wire speed, L (unit: m) is the maximum cut length, P (unit: m/s) is the cut speed, and n is the number of workpieces that are cut simultaneously.
  • For group III nitride composite substrate 1 obtained through the cutting, respective main surfaces of group III nitride film 13 and support substrate 11 can be polished so that a desired thickness and the uniformity of them are obtained. Specifically, in order to bond group III nitride composite substrate 1 to a polishing apparatus in a polishing process, group III nitride composite substrate 1 can be secured by means of suction or a back pad. Group III nitride composite substrate 1 may also be bonded first to a holding plate and then bonded to a polishing apparatus. For this bonding, mechanical pressurization such as vacuum chuck, air back pressurization, weight or the like can be used to reduce inclination and correct warp. Group III nitride composite substrate 1 may also be secured by means of suction. Group III nitride composite substrate 1 can uniformly be bonded to the polishing apparatus to reduce the thickness variation after polishing. In addition, the shape of bonding can be controlled depending on the shape of a polishing surface plate and the shape of the pad to thereby reduce the thickness variation after polishing.
  • As seen from the above, regarding the method for manufacturing a group III nitride composite substrate in the present reference embodiment, it is preferable to polish main surface 13 m of group III nitride film 13 in group III nitride composite substrate 1 obtained through cutting, in order to reduce the thickness variation of group III nitride film 13 in group III nitride composite substrate 1, keep the crystal quality high by eliminating a damaged layer caused by cutting of group III nitride film 13, and smooth the main surface.
  • Accordingly, regarding the method for manufacturing a group III nitride composite substrate in the present reference embodiment, the predetermined distance of the plane located inwardly from bonded main surface 13 n of group III nitride film donor substrate 13D, for cutting group III nitride film donor substrate 13D in joined substrate 1L, 1LS along the plane at this distance, is preferably the sum determined by adding a polishing allowance, which is a portion to be removed away by polishing, to the thickness of group III nitride film 13 of group III nitride composite substrate 1 to be manufactured. Here, the polishing allowance is not particularly limited, but preferably 10 μm or more, more preferably 20 μm or more, and still more preferably 30 μm or more, in order to reduce the thickness variation and remove a damaged layer. Meanwhile, in order to reduce the material loss of group III nitride film donor substrate 13D, the polishing allowance is preferably 100 μm or less, more preferably 80 μm or less, and still more preferably 60 μm or less.
  • Referring also to FIGS. 12 (D) and (B) and FIGS. 13 (D) and (B), the remaining group III nitride film donor substrate 13Dr may have its main surface polished so that it can be used repeatedly.
  • <Use of Support-Incorporated Group III Nitride Film Donor Substrate>
  • Referring to FIG. 13 (B) to (D), a support-incorporated group III nitride film donor substrate 5D in which a group III nitride film donor substrate support 15 is bonded to group III nitride film donor substrate 13D can be used to produce a group III nitride composite substrate 1 in a similar manner to the above. Support-incorporated group III nitride film donor substrate 5D has group III nitride film donor substrate support 15 which supports group III nitride film donor substrate 13D, and can therefore be used repeatedly even if group III nitride film donor substrate 13D becomes thinner to such an extent that substrate 13D cannot stand by itself.
  • Regarding support-incorporated group III nitride film donor substrate 5D, the form in which group III nitride film donor substrate support 15 and group III nitride film donor substrate 13D are bonded to each other is not particularly limited. In order to increase the joint strength of the bonding, however, it is preferable to dispose a joint film 14 therebetween. Group III nitride film donor substrate support 15 is also not particularly limited. In order to increase the support strength and prevent occurrence of crack and warp, however, it is preferable that support 15 is formed of a material having similar physical properties to support substrate 11. While joint film 14 is not particularly limited, it may preferably be any of SiO2 film, Si3N4 film, TiO2 film, Ga2O3 film, and the like, since these films provide a good joint to group III nitride film donor substrate support 15 and group III nitride film donor substrate 13D.
  • <Step of Adjusting Root Mean Square Roughness of Support-Substrate-Side Main Surface of Group III Nitride Composite Substrate>
  • The method for manufacturing group III nitride composite substrate 1 in the present reference embodiment includes the step of adjusting the RMS of support-substrate 11-side main surface 11 n by polishing support-substrate 11-side main surface 11 n of group III nitride composite substrate 1 before, in, or after any one of the above-described steps. Through the step of adjusting the RMS of support-substrate 11-side main surface 11 n of group III nitride composite substrate 1, support-substrate 11-side main surface 11 n can have a mean value mS of the RMS of 0.3 nm or more and 20 nm or less, and support-substrate 11-side main surface 11 n can have a ratio sS/mS of standard deviation sS of the RMS to mean value mS of the RMS of 0.005 or more and 0.4 or less.
  • Mean value mS of the RMS of support-substrate 11-side main surface 11 n can be controlled by means of the viscosity of the abrasive, the size of abrasive grains, the material and the surface shape of a surface plate and a polishing pad, and the polishing conditions. In order to make smaller mean value mS of the RMS, oil-base abrasives are more preferred relative to water-base abrasives, a higher viscosity of the abrasive is more preferred, a smaller abrasive grain size is more preferred, and a soft surface plate and a soft polishing pad are more preferred. As to the surface shape of the surface plate and the polishing pad, a shape having grooves formed therein for sludge removal is preferred. The grooves for sludge removal refer to grooves having a relatively wide width and a relatively wide pitch that are formed for removing away sludge and/or aggregated abrasive grains on the polishing interface. The polishing conditions are preferably a low pressure and a low circumferential velocity.
  • In order to control the ratio sS/mS of standard deviation sS of the RMS to mean value mS of the RMS of support-substrate 11-side main surface 11 n, a viscosity η (unit: mPa·S) and a flow rate Q (unit: m3/s) of a polishing solution, and an area S (unit: m2), a polishing pressure P (unit: kPa), and a circumferential velocity V (unit: m/s) of a surface plate are used so that an action coefficient FE (unit: m2/s) defined by a formula: FE=η×Q×V/S×P is in a predetermined range, specifically 4×10−17 or more and 1×10−16 or less. As to the surface shape of the surface plate and the polishing pad, a shape having grooves formed for making the abrasive uniform is preferred. The grooves for making the abrasive uniform refer to grooves having a relatively narrow width and a relatively narrow pitch that are formed for uniformly holding the abrasive in a central portion of the substrate.
  • <Step of Adjusting RMS of Group III-Nitride-Film-Side Main Surface of Group III Nitride Composite Substrate>
  • The method for manufacturing group III nitride composite substrate 1 in the present reference embodiment includes the step of adjusting the RMS of group III-nitride-film 13-side main surface 13 m by polishing group III-nitride-film 13-side main surface 13 m of group III nitride composite substrate 1 after the step of forming the group III nitride composite substrate. Through the step of adjusting the RMS of group III-nitride-film 13-side main surface 13 m of group III nitride composite substrate 1, group III-nitride-film 13-side main surface 13 m can have a mean value mIII-N of the RMS of 0.15 nm or more and 3 nm or less, and group III-nitride-film 13-side main surface 13 m can have a ratio sIII-N/mIII-N of standard deviation sIII-N of the RMS to mean value mIII-N of the RMS of 0.008 or more and 0.5 or less.
  • Here, mean value mIII-N of the RMS of group III-nitride-film 13-side main surface 13 m can be controlled by means of the viscosity of the abrasive, the size of abrasive grains, the material and the surface shape of a surface plate and a polishing pad, and the polishing conditions. In order to make smaller mean value mIII-N of the RMS, a higher viscosity of the abrasive is more preferred, a smaller abrasive grain size is more preferred, and a soft surface plate and a soft polishing pad are more preferred. As to the surface shape of the surface plate and the polishing pad, a shape having grooves formed therein for sludge removal is preferred. The polishing conditions are preferably a low pressure and a low circumferential velocity.
  • For the ratio sIII-N/mIII-N of standard deviation sIII-N of the RMS to mean value mIII-N of the RMS of group III-nitride-film 13-side main surface 13 m, a viscosity η (unit: mPa·S) and a flow rate Q (unit: m3/s) of a polishing solution, and an area S (unit: m2), a polishing pressure P (unit: kPa), and a circumferential velocity V (unit: m/s) of a surface plate are used so that an action coefficient FE (unit: m2/s) defined by a formula: FE=η×Q×V/S×P is in a predetermined range, specifically 4×10−14 or more and 1×10−13 or less. As to the surface shape of the surface plate and the polishing pad, a shape having grooves formed for making the abrasive uniform is preferred.
    • Reference Embodiment II-4-2 Another Method for Manufacturing Group III Nitride Composite Substrate
  • Referring to FIG. 14, a method for manufacturing a group III nitride composite substrate, which is a still further reference embodiment of Reference Invention II, is a method for manufacturing group III nitride composite substrate 1 of the Reference Embodiment II-1, including the steps of: forming joined substrate 1L having a diameter of 75 mm or more by bonding support substrate 11 and group III nitride film donor substrate 13D to each other (FIG. 14 (A) to (C)); forming group III nitride composite substrate 1 by performing at least one of grinding, polishing, and etching on a main surface of group III nitride film donor substrate 13D of joined substrate 1L, the main surface being located opposite to the bonded main surface of group III nitride film donor substrate 13D (FIG. 14 (D)); and adjusting the RMS of the support-substrate-side main surface by polishing the support-substrate-side main surface of the group III nitride composite substrate before, in, or after any one of the above-described steps.
  • The method for manufacturing group III nitride composite substrate 1 in the present reference embodiment can efficiently manufacture low-cost and large-diameter group III nitride composite substrate 1 having a thick group III nitride film and a small temperature variation on the main surface when a group III nitride layer is grown, to enable group III nitride semiconductor devices to be manufactured with a high yield.
  • Regarding the method for manufacturing group III nitride composite substrate 1 in the present reference embodiment, at least one of grinding, polishing, and etching is performed on the main surface opposite to the bonded main surface of group III nitride film donor substrate 13D to thereby adjust the thickness by reducing it, and accordingly, group III nitride composite substrate 1 including group III nitride film 13 having a desired thickness of 10 μm or more and 250 μm less can be obtained.
  • According to the method for manufacturing group III nitride composite substrate 1 in the present reference embodiment, in the step of forming a group III nitride composite substrate, at least one of grinding, polishing, and etching is performed on the main surface opposite to the bonded main surface of the group III nitride film donor substrate. Therefore, in order to reduce the material loss of group III nitride film donor substrate 13D, the thickness of group III nitride film donor substrate 13D to be used is preferably 500 μm or less, and more preferably 400 μm or less.
  • <Step of Forming Joined Substrate>
  • Referring to FIG. 14 (A) to (C), the step of forming joined substrate 1L includes, similarly to the method for manufacturing a group III nitride composite substrate in Reference Embodiment II-4-1, the sub step of forming joint film 12 a on main surface 11 m of support substrate 11 (FIG. 14 (A)), the sub step of forming joint film 12 b on main surface 13 n of group III nitride film donor substrate 13D (FIG. 14 (B)), and the sub step of bonding main surface 12 am of joint film 12 a formed on main surface 11 m of support substrate 11 and main surface 12 bn of joint film 12 b formed on main surface 13 n of group III nitride film donor substrate 13D to each other (FIG. 14 (C)).
  • Here, the sub step of forming joint film 12 a on main surface 11 m of support substrate 11 as shown in FIG. 14 (A) is similar to the sub step of forming joint film 12 a on main surface 11 m of support substrate 11 as shown in FIG. 12 (A). The sub step of forming joint film 12 b on main surface 13 n of group III nitride film donor substrate 13D as shown in FIG. 14 (B) is similar to the sub step of forming joint film 12 b on main surface 13 n of group III nitride film donor substrate 13D as shown in FIG. 12 (B). The sub step of bonding main surface 12 am of joint film 12 a formed on main surface 11 m of support substrate 11 and main surface 12 bn of joint film 12 b formed on main surface 13 n of group III nitride film donor substrate 13D to each other as shown in FIG. 14 (C) is similar to the sub step of bonding main surface 12 am of joint film 12 a formed on main surface 11 m of support substrate 11 and main surface 12 bn of joint film 12 b formed on main surface 13 n of group III nitride film donor substrate 13D to each other as shown in FIG. 12 (C). Therefore, the description of them will not be repeated.
  • <Step of Forming Group III Nitride Composite Substrate>
  • Referring to FIG. 14 (D), in the step of forming group III nitride composite substrate 1, at least one of grinding, polishing, and etching is performed on main surface 13 m opposite to bonded main surface 13 n of group III nitride film donor substrate 13D in joined substrate 1L, to thereby form group III nitride film 13 with its thickness reduced, from group III nitride film donor substrate 13D, and accordingly form group III nitride composite substrate 1 in which support substrate 11 and group III nitride film 13 are bonded together with joint film 12 interposed therebetween.
  • The method for grinding group III nitride film donor substrate 13D is not particularly limited, and may be grinding by means of one of a grinding wheel and abrasive grains. The method for polishing group III nitride film donor substrate 13D is not particularly limited, and may be rough polishing such as mechanical polishing, precision polishing such as CMP and chemical polishing, or the like. The method for etching group III nitride film donor substrate 13D is not particularly limited, and may be wet etching using a chemical solution, dry etching such as RIE (Reactive Ion Etching), or the like.
  • In order to reduce the thickness variation of group III nitride film 13 to be formed, it is preferable to polish main surface 13 m of group III nitride film 13 of group III nitride composite substrate 1 obtained through at least one of grinding and etching. The reduction of the thickness by at least one of grinding, polishing, and etching is preferably 10 μm or more, more preferably 20 μm or more, and still more preferably 30 μm or more, in order to reduce the thickness variation and remove a damaged layer. Meanwhile, the reduction of the thickness by at least one of grinding, polishing, and etching is preferably 100 μm or less, more preferably 80 μm or less, and still more preferably 60 μm or less, in order to reduce the material loss of group III nitride film donor substrate 13D.
  • <Step of Adjusting RMS of Support-Substrate-Side Main Surface of Group III Nitride Composite Substrate>
  • The method for manufacturing group III nitride composite substrate 1 in the present reference embodiment includes the step of adjusting the RMS of support-substrate 11-side main surface 11 n by polishing support-substrate 11-side main surface 11 n of group III nitride composite substrate 1 before, in, or after any one of the above-described steps. Through the step of adjusting the RMS of support-substrate 11-side main surface 11 n of group III nitride composite substrate 1, support-substrate 11-side main surface 11 n can have a mean value mS of the RMS of 0.3 nm or more and 20 nm or less, and support-substrate 11-side main surface 11 n can have a ratio sS/mS of standard deviation sS of the RMS to mean value mS of the RMS of 0.005 or more and 0.4 or less.
  • Here, the control of mean value mS of the RMS of support-substrate 11-side main surface 11 n and ratio sS/mS of standard deviation sS of the RMS to mean value mS of the RMS of support-substrate 11-side main surface 11 n is similar to that of the method for manufacturing group III nitride composite substrate 1 in Reference Embodiment II-4-1.
  • <Step of Adjusting RMS of Group III-Nitride-Film-Side Main Surface of Group III Nitride Composite Substrate>
  • The method for manufacturing group III nitride composite substrate 1 in the present reference embodiment preferably includes the step of adjusting the RMS of group III-nitride-film 13-side main surface 13 m by polishing group III-nitride-film 13-side main surface 13 m of group III nitride composite substrate 1 after the step of forming the group III nitride composite substrate. Through the step of adjusting the RMS of group III-nitride-film 13-side main surface 13 m of group III nitride composite substrate 1, group III-nitride-film 13-side main surface 13 m can have a mean value mIII-N of the RMS of 0.15 nm or more and 3 nm or less, and group III-nitride-film 13-side main surface 13 m can have a ratio sIII-N/mIII-N of standard deviation sIII-N of the RMS to mean value mIII-N of the RMS of 0.008 or more and 0.5 or less.
  • Here, the control of mean value mIII-N of the RMS of group III-nitride-film 13-side main surface 13 m and ratio sIII-N/mIII-N of standard deviation of the RMS to mean value mIII-N of the RMS of group III-nitride-film 13-side main surface 13 m is similar to that of the method for manufacturing group III nitride composite substrate 1 in Reference Embodiment II-4-1.
    • Reference Embodiment II-5 Method for Manufacturing Group III Nitride Semiconductor Device
  • Referring to FIG. 15, a method for manufacturing a group III nitride semiconductor device, which is a still further reference embodiment of Reference Invention II, includes the steps of: preparing group III nitride composite substrate 1 of Reference Embodiment II-1; and growing at least one group III nitride layer 20 on group III-nitride-film 13-side main surface 13 m of group III nitride composite substrate 1 (FIG. 15 (A)). The method for manufacturing a group III nitride semiconductor device in the present reference embodiment can be used to manufacture group III nitride semiconductor devices having excellent characteristics with a high yield, since the group III nitride layer is grown on group III-nitride-film 13-side main surface 13 m having a small temperature variation on main surface 13 m when the group III nitride layer is grown.
  • The method for manufacturing a group III nitride semiconductor device in the present reference embodiment may further include the step of removing support substrate 11 from group III nitride composite substrate 1 (FIG. 15 (C)) after the step of growing group III nitride layer 20 (FIG. 15 (A)). This step enables group III nitride semiconductor devices of a variety of forms to be manufactured.
  • Further, the method for manufacturing a group III nitride semiconductor device in the present reference embodiment may further include the step of bonding device support substrate 40 onto group III nitride layer 20 (FIG. 15 (B)) after the step of growing the group III nitride layer (FIG. 15 (A)) and before the step of removing the support substrate (FIG. 15 (C)). This step enables group III nitride semiconductor devices having a high mechanical strength and excellent characteristics and supported by device support substrate 40 to be manufactured with a high yield.
  • The method for manufacturing a group III nitride semiconductor device in the present reference embodiment may specifically be performed through the following steps.
  • <Step of Growing Group III Nitride Layer>
  • Referring to FIG. 15 (A), in the step of growing at least one group III nitride layer 20 on group III-nitride-film 13-side main surface 13 m of group III nitride composite substrate 1, suitable methods for growing group III nitride layer 20 are gas phase methods such as MOVPE, MBE, HVPE, and sublimation method, as well as liquid phase methods such as flux method, in order to epitaxially grow group III nitride layer 20 having a high crystal quality, and a particularly suitable method is MOVPE.
  • The structure of group III nitride layer 20 varies depending on the type of group III nitride semiconductor device 4. In the case where group III nitride semiconductor device 4 is a light-emitting device, group III nitride layer 20 may be configured by successively growing, on group III nitride film 13, for example, an n-GaN layer 21, an n-In0.05Ga0.95N layer 22, an active layer 23 having a multiple quantum well structure, a p-Al0.09Ga0.91N layer 24, and a p-GaN layer 25.
  • In this way, at least one group III nitride layer 20 is grown on group III-nitride-film 13-side main surface 13 m of group III nitride composite substrate 1, and accordingly laminated group III nitride composite substrate 2 is obtained.
  • <Step of Bonding Device Support Substrate>
  • Referring to FIG. 15 (B), the step of bonding device support substrate 40 onto group III nitride layer 20 is performed by forming a first electrode 30 and a pad electrode 33 on group III nitride layer 20 of laminated group III nitride composite substrate 2, forming a pad electrode 43 and a joint metal film 44 on device support substrate 40, and bonding joint metal film 44 to pad electrode 33. Through these steps, laminated substrate 3 is obtained. As device support substrate 40, Si substrate, CuW substrate, Mo substrate, or the like is used.
  • <Step of Removing Support Substrate>
  • Referring to FIG. 15 (C), the step of removing support substrate 11 from group III nitride composite substrate 1 is performed by removing support substrate 11 of group III nitride composite substrate 1 from laminated substrate 3. In the case where group III nitride composite substrate 1 includes joint film 12 interposed between support substrate 11 and group III nitride film 13, joint film 12 can also be removed. The method for removing support substrate 11 and joint film 12 is not particularly limited, and suitable methods to be used are grinding, etching, and the like. For example, support substrate 11 formed of a material which is low in hardness, strength, and wear resistance, and is likely to be ground off, can be removed by at least one of grinding and polishing, in order to reduce the manufacturing cost. Support substrate 11 formed of a material which can be dissolved in a chemical solution such as acid solution or alkali solution, can be removed through etching with a chemical solution, since it requires low manufacturing cost. As support substrate 11, a support substrate formed of a polycrystalline material such as ceramic material is more preferred as compared with a support substrate formed of a monocrystalline material such as sapphire, SiC, group III nitride (GaN for example), or the like, since the support substrate 11 of the polycrystalline material is easier to remove.
  • It should be noted that, regarding manufacturing of a group III nitride semiconductor device using a free-standing group III nitride substrate, a rear surface of the free-standing group III nitride substrate (the rear surface refers to a main surface opposite to a main surface on which a group III nitride layer is formed, and this definition is applied as well hereinafter) is subjected to grinding or the like for the purpose of reducing the thickness of the device. In contrast, regarding manufacturing of a group III nitride semiconductor device using a group III nitride composite substrate, it is easy to remove the support substrate by etching, grinding, or the like for the purpose of reducing the thickness of the device, and therefore, the cost of manufacturing the group III nitride semiconductor device can be reduced.
  • <Step of Forming Electrode>
  • Referring to FIG. 15 (D), on group III nitride film 13 which has been exposed after removal of support substrate 11 and joint film 12 from laminated substrate 3, a second electrode 50 is formed and, on device support substrate 40, a device support substrate electrode 45 is formed.
    • Reference Invention III
  • Reference Invention III relates to a group III nitride composite substrate that can be manufactured at a low cost, has a large diameter, and has a group III nitride film with an appropriate thickness and a high crystal quality, a method for manufacturing the group III nitride composite substrate, a laminated group III nitride composite substrate, as well as a group III nitride semiconductor device and a method for manufacturing the same.
  • [Background Art Regarding Reference Invention III]
  • Group III nitrides such as GaN have superior semiconductor properties and are therefore used as materials suitable for semiconductor devices.
  • For example, Japanese Patent Laying-Open No. 2009-126722 discloses a free-standing group III nitride substrate to be used as a substrate for a semiconductor device. The free-standing group III nitride substrate has a diameter of 25 mm or more and 160 mm or less and a thickness of 100 μm or more and 1000 μm or less. It discloses, as a specific example thereof, a free-standing GaN substrate having a diameter of 10 mm and a thickness of 400 μm.
  • Japanese Patent Laying-Open No. 2008-010766 discloses a GaN-thin-film-bonded substrate to be used as a substrate for manufacturing a semiconductor device. The GaN-thin-film-bonded substrate includes a heterogeneous substrate whose chemical composition is different from that of GaN, and a GaN thin film having a thickness of 0.1 μm or more and 100 μm or less and bonded to the heterogeneous substrate. It discloses, as a specific example thereof, a GaN-thin-film-bonded substrate having a diameter of 50.8 mm and including a sapphire substrate and a GaN thin film having a thickness of 0.1 μm or 100 μm and bonded to the sapphire substrate.
  • [Problems to be Solved by Reference Invention III]
  • The free-standing group III nitride substrate disclosed in Japanese Patent Laying-Open No. 2009-126722, however, is very expensive. This is chiefly for the reason that the group III nitride does not form a liquid phase and therefore a liquid-phase growth method which is a low-cost manufacturing method cannot be employed, namely it is inevitable to employ a vapor-phase growth method of a low yield. In addition, the group III nitride is a low-fracture-toughness material which is highly susceptible to fracture. Due to this, it is difficult to increase the diameter of the substrate. Further, if the thickness of the substrate is reduced to a thickness on the order of 250 μm for the purpose of reducing the manufacturing cost, the substrate is susceptible to warp. Accordingly, in the step of growing an epitaxial layer on the substrate, the crystal quality may be deteriorated or substrate peeling may occur, which reduces the yield of manufacture of semiconductor devices. It has therefore been difficult to produce a high-value-added semiconductor device.
  • In contrast, for the bonded substrate as disclosed in Japanese Patent Laying-Open No. 2008-010766, the amount of use of the expensive group III nitride can be reduced, and therefore, the cost of manufacturing a semiconductor device can be reduced.
  • In order to obtain excellent characteristics of a semiconductor device, it is preferable that the thickness of a group III nitride film which is to serve as a base is preferably 10 μm or more. In the conventional bonded substrate as disclosed in Japanese Patent Laying-Open No. 2008-010766, however, the thickness of the group III nitride film is limited to approximately 1 μm, for the following reasons. For the bonded substrate as disclosed in Japanese Patent Laying-Open No. 2008-010766, the heterogeneous substrate and the GaN bulk crystal are bonded together, and thereafter the ion implantation method is used to divide the GaN bulk crystal to thereby form a GaN thin film. On this method, however, a certain limitation in terms of the depth of ion implantation is imposed. Therefore, if a group III nitride film of a 10 μm or more is produced, the depth to which ions are implanted varies, and consequently the thickness of the group III nitride film varies. In this case, an adequate quality cannot be ensured. Namely, for the conventional bonded substrate as disclosed in Japanese Patent Laying-Open No. 2008-010766, adequate characteristics of semiconductor devices and an adequate yield of manufacture of semiconductor devices cannot be achieved if the thickness of the group III nitride film is 10 μm or more.
  • In the case where a wire saw for example is used instead of the ion implantation method for the conventional bonded substrate as disclosed in Japanese Patent Laying-Open No. 2008-010766 to cut and separate the group III nitride film and thereby obtain the bonded substrate having a group III nitride film of 10 μm or more, the substrate is susceptible to warp or cracks. In this case as well, it is difficult to grow an epitaxial layer of a high quality on the group III nitride film.
  • As seen from the above, it has been considerably difficult for the conventional known technique to obtain a group III nitride composite substrate which includes a group III nitride film having an appropriate thickness range, and enables excellent semiconductor device characteristics to be achieved, while the amount of use of the expensive group III nitride is reduced.
  • An object of the present invention is to provide a group III nitride composite substrate that can be manufactured at a low cost, and has a large diameter and has a group III nitride film with an appropriate thickness and a high crystal quality, a method for manufacturing the group III nitride composite substrate, a laminated group III nitride composite substrate, as well as a group III nitride semiconductor device and a method for manufacturing the same.
  • [Solution to the Problems]
  • According to an aspect, Reference Invention III provides a group III nitride composite substrate with a diameter of 75 mm or more including a support substrate and a group III nitride film having a thickness of 10 μm or more and 250 μm or less that are bonded to each other, the group III nitride composite substrate includes a joint film interposed between the support substrate and the group III nitride film and joining the support substrate and the group III nitride film to each other, and the joint film has a thickness variation of 2% or more and 40% or less.
  • According to another aspect, Reference Invention III provides a group III nitride composite substrate with a diameter of 75 mm or more including a support substrate and a group III nitride film having a thickness of 10 μm or more and 250 μm or less that are bonded to each other, the group III nitride composite substrate includes a joint film interposed between the support substrate and the group III nitride film and joining the support substrate and the group III nitride film to each other, a shear joint strength between the support substrate and the group III nitride film is 4 MPa or more and 40 MPa or less, and a ratio of a joint area between the support substrate and the group III nitride film is 60% or more and 99% or less.
  • Regarding the group III nitride composite substrates according to these aspects of Reference Invention III, a ratio αIII-N/αS of a thermal expansion coefficient αIII-N of the group III nitride film to a thermal expansion coefficient αS of the support substrate may be 0.75 or more and 1.25 or less, and a ratio tIII-N/tS of a thickness tIII-N of the group III nitride film to a thickness tS of the support substrate may be 0.02 or more and 1 or less.
  • The support substrate may have a thermal conductivity λS of 3 W·m−1·K−1 or more and 280 W·m−1·K−1 or less.
  • The support substrate may have a Young's modulus ES of 150 GPa or more and 500 GPa or less.
  • Further, the diameter of the group III nitride composite substrate may be 125 mm or more and 300 mm or less.
  • According to still another aspect, Reference Invention III provides a laminated group III nitride composite substrate including the group III nitride composite substrate according to the above aspect, and at least one group III nitride layer disposed on the group III-nitride-film-side main surface of the group III nitride composite substrate.
  • According to a further aspect, Reference Invention III provides a group III nitride semiconductor device including the group III nitride film in the group III nitride composite substrate according to the above aspect, and at least one group III nitride layer disposed on the group III nitride film.
  • According to a still further aspect, Reference Invention III provides a method for manufacturing a group III nitride composite substrate according to the above aspect, including the steps of forming a joined substrate with a diameter of 75 mm or more by bonding a support substrate and a group III nitride film donor substrate to each other; and forming the group III nitride composite substrate by cutting the group III nitride film donor substrate in the joined substrate along a plane located inwardly at a predetermined distance from a bonded main surface of the group III nitride film donor substrate.
  • According to a still further aspect, Reference Invention III provides a method for manufacturing a group III nitride composite substrate according to the above aspect, including the steps of forming a joined substrate with a diameter of 75 mm or more by bonding a support substrate and a group III nitride film donor substrate to each other; and forming the group III nitride composite substrate by performing at least one of grinding, polishing, and etching on a main surface of the group III nitride film donor substrate in the joined substrate, the main surface being opposite to a bonded main surface of the group III nitride film donor substrate.
  • According to a still further aspect, Reference Invention III provides a method for manufacturing a group III nitride semiconductor device, including the steps of preparing a group III nitride composite substrate; and growing at least one group III nitride layer on a group III nitride film of the group III nitride composite substrate.
  • The method for manufacturing a group III nitride semiconductor device according to this aspect of Reference Invention III may further include the steps of: bonding a device support substrate onto the group III nitride layer; and removing the support substrate from the group III nitride composite substrate.
  • [Effects of Reference Invention III]
  • Reference Invention III can provide a group III nitride composite substrate that can be manufactured at a low cost, and has a large diameter and has a group III nitride film with an appropriate thickness and a high crystal quality, a method for manufacturing the group III nitride composite substrate, a laminated group III nitride composite substrate, as well as a group III nitride semiconductor device and a method for manufacturing the same.
    • Reference Embodiment III-1 Group III Nitride Composite Substrate
  • Referring to FIG. 6, a group III nitride composite substrate 1 which is a reference embodiment of Reference Invention III is a substrate with a diameter of 75 mm or more including a support substrate 11 and a group III nitride film 13 having a thickness of 10 μm or more and 250 μm or less that are bonded to each other. Group III nitride composite substrate 1 includes a joint film 12 interposed between support substrate 11 and group III nitride film 13 and joining support substrate 11 and group III nitride film 13 to each other. The group III nitride composite substrate is characterized in that joint film 12 has a thickness variation of 2% or more and 40% or less.
  • Group III nitride composite substrate 1 in the present reference embodiment is also characterized in that a shear joint strength between support substrate 11 and group III nitride film 13 joined to each other by joint film 12 is 4 MPa or more and 40 MPa or less, and a ratio of a joint area between support substrate 11 and group III nitride film 13 is 60% or more and 99% or less.
  • In contrast to the conventional free-standing group III nitride substrate, the present reference embodiment provides a composite substrate in which group III nitride film 13 is joined to support substrate 11. This feature can be employed to reduce the thickness of the expensive group III nitride film and reduce the cost of the semiconductor device.
  • Further, also in contrast to the conventional bonded substrate, the present reference embodiment provides the substrate having a large diameter of 75 mm or more and group III nitride film 13 having a thickness of 10 μm or more and 250 μm or less. Accordingly, the group III nitride composite substrate of the present reference embodiment can be used to obtain significantly excellent semiconductor device characteristics.
  • The above-described features can be obtained from that the thickness variation of joint film 12 is 2% or more and 40% or less, or that the shear joint strength between support substrate 11 and group III nitride film 13 is 4 MPa or more and 40 MPa or less, and the ratio of the joint area between support substrate 11 and group III nitride film 13 is 60% or more and 99% or less.
  • The group III nitride composite substrate includes joint film 12 having its thickness variation which is controlled so that the thickness variation falls within a specific range. Therefore, even in the case where group III nitride film 13 of a substrate having a large diameter of 75 mm or more is cut with a wire saw or the like to separate a part thereof and thereby reduce the thickness thereof to 10 μm or more and 250 μm or less, the heat from a susceptor on which the substrate is mounted is transmitted uniformly in the film in a semiconductor device process of forming an epitaxial layer on group III nitride film 13. Thus, the epitaxial layer having a good thickness variation and a high crystal quality can be obtained, and accordingly, the yield of manufacture of semiconductor devices can also be increased.
  • The joint strength and the ratio of the joint area between support substrate 11 and group III nitride film 13 are controlled so that they fall within specific ranges respectively. Therefore, the stress applied to the joint film is alleviated and occurrence of warp can be suppressed. Accordingly, the yield of manufacture of semiconductor devices can be increased.
  • Group III nitride composite substrate 1 in the present reference embodiment can have at least one of: the above-described feature of the thickness variation of joint film 12; and the above-described feature of the joint strength and the ratio of the joint area between support substrate 11 and group III nitride film 13, to thereby increase the yield of manufacture of semiconductor devices and improve the characteristics of the semiconductor devices. It is particularly preferable that group III nitride composite substrate 1 has both the above-described features, since respective effects of the features are synergistically produced and thus the effects of the present invention can further be enhanced.
  • <Diameter of Group III Nitride Composite Substrate>
  • In order to produce a greater number of semiconductor device chips from one composite substrate, the diameter of group III nitride composite substrate 1 is 75 mm or more, and is preferably 100 mm or more, more preferably 125 mm or more, and still more preferably 150 mm or more. Meanwhile, in order to reduce the warp of the composite substrate and increase the yield of semiconductor devices, the diameter of group III nitride composite substrate 1 is preferably 300 mm or less, and more preferably 200 mm or less.
  • In the following, each of the parts constituting group III nitride composite substrate 1 in the present reference embodiment will be described.
  • <Joint Film>
  • Joint film 12 in the present reference embodiment has a function of absorbing and alleviating unevenness of a joint surface of support substrate 11 and a joint surface of group III nitride film 13 to thereby increase the joint strength between support substrate 11 and group III nitride film 13.
  • Joint film 12 is not particularly limited as long as joint film 12 can join support substrate 11 and group III nitride film 13 to each other. Joint film 12 is preferably SiO2 film, Si3N4 film, TiO2 film, Ga2O3 film, or the like, because these films have a high joining ability for joining support substrate 11 and group III nitride film 13 to each other. While the average thickness of joint film 12 is not particularly limited, the average thickness thereof may for example be approximately 100 nm to 4 μm.
  • <Thickness Variation of Joint Film>
  • In the present reference embodiment, the thickness variation of joint film 12 is 2% or more and 40% or less. “Thickness variation” is herein an indicator of the uniformity of the thickness of joint film 12 and calculated in accordance with the following formula, from “maximum value tmax of the thickness” and “minimum value of the thickness” among the thicknesses measured in the entire main surface of joint film 12.

  • thickness variation(%)={(t max −t min)/(t max −t min)}×100  Formula:
  • Here, as a reference surface for the thickness of the joint film, main surface 11 m of support substrate 11 may be used. The measurement points where the thickness is measured are preferably at least 13 points, and the measurement points adjacent to each other are preferably located at substantially regular intervals.
  • The thickness of the joint film can be measured with a conventionally known optical-interference film thickness meter, step meter, or the like. The thickness can also be measured through observation of a cross section perpendicular to the main surface of joint film 12 with a scanning electron microscope (SEM) or the like.
  • If the thickness variation is less than 2%, heat conduction from the susceptor on which the substrate is mounted is nonuniform when an epitaxial layer is grown. As a result, the substrate is warped in a concave form and has a large difference between the temperature of a central portion and the temperature of a peripheral portion. In this case, the epitaxial layer with a high quality cannot be grown, the yield of manufacture of semiconductor devices is low, and the characteristics of the semiconductor devices are deteriorated. If the thickness variation is more than 40%, there are a greater number of regions where the joint film is thinner and regions where the joint film is absent (namely non-joined regions). In this case as well, an epitaxial layer with a high quality cannot be grown and the yield of manufacture of semiconductor devices is low. In view of the above, the thickness variation of the joint film in the present reference embodiment is 2% or more and 40% or less. The thickness variation falling within this range produces superior effects that the temperature is distributed uniformly over the whole composite substrate during epitaxial growth and a high-quality epitaxial layer having a high crystal quality can be grown. The thickness variation is more preferably 5% or more and 25% or less, and still more preferably 7% or more and 16% or less. The thickness variation falling within these ranges enables the uniformity of the thickness of the joint film to be further improved and the crystal quality of the epitaxial layer formed on group III nitride film 13 to be further enhanced.
  • The thickness variation of the joint film can be controlled so that it falls within a desired range, by appropriately adjusting the conditions of chemical mechanical polishing (hereinafter also referred to as “CMP”) performed on the surface of the joint film, for example. Examples of the conditions may be the material for the abrasive, the linear velocity of polishing, the material for the polishing pad, and the like.
  • <Shear Joint Strength>
  • In the present reference embodiment, the shear joint strength between support substrate 11 and group III nitride film 13 joined together by joint film 12 is 4 MPa or more and 40 MPa or less. In the case where the shear joint strength falls in this range, substrate peeling does not occur and the warp of the substrate is alleviated in a process of manufacturing a semiconductor device. Therefore, the yield of manufacture of semiconductor devices is remarkably increased. The shear joint strength is more preferably 10 MPa or more and 30 MPa or less. This is suitable since such a shear strength tends to further increase the effect of alleviating the warp of the substrate. If the shear joint strength is less than 4 MPa, the joint strength is not sufficient. In this case, substrate peeling occurs during epitaxial growth, because of deformation of the substrate due to heat conduction from the susceptor on which the substrate is mounted, resulting in a lower yield of manufacture of semiconductor devices. If the shear joint strength is more than 40 MPa, a greater stress is applied to joint film 12 and the warp of the substrate tends to be increased, resulting in a lower yield of manufacture of semiconductor devices.
  • In the present reference embodiment, the shear joint strength can be measured with a die shear tester, tensile tester, or the like, by a method in accordance with JIS K 6850 “Determination of tensile lap-shear strength of rigid-to-rigid bonded assemblies.” Specifically, a rectangular composite substrate (6 mm in length×8 mm in width) is prepared as a measurement sample, and the composite substrate is placed flat and secured on a sample stage of a tester so that the support substrate faces downward. After this, a test jig of 9 mm in width is used to apply a load in the direction parallel to the joint surface between the support substrate and the group III nitride film (namely the shear direction), and a maximum shear load at the time when the joint surface is broken is measured. Then, the maximum shear load is divided by the area of the joint surface (4.8×10−5 m2), to thereby calculate the shear joint strength.
  • As a method for achieving a shear joint strength of 4 MPa or more and 40 MPa or less between support substrate 11 and group III nitride film 13, a method according to which an annealing treatment is performed before and after support substrate 11 and group III nitride film 13 are joined to each other, for example, can appropriately be used. Namely, a suitable method is as follows. After a joint film is formed on each of one main surface of support substrate 11 and one main surface of group III nitride film 13, each of support substrate 11 and group III nitride film 13 is subjected to an annealing treatment. Annealed support substrate 11 and annealed group III nitride film 13 are joined to each other with the joint film interposed therebetween, and thereafter subjected again to the annealing treatment.
  • Regarding conditions for the annealing treatment, the annealing treatment is performed preferably in a nitrogen atmosphere at 400° C. or more for one hour or more, more preferably in a nitrogen atmosphere at 600° C. or more for one hour or more, and particularly preferably in a nitrogen atmosphere at 800° C. or more for one hour or more.
  • In terms of the quality of the joint film, the temperature condition for the annealing treatment is preferably 1200° C. or less, and the time for the treatment is preferably 48 hours or less.
  • The shear joint strength can also be controlled by means of the surface state (namely the surface roughness) before the joint film is joined.
  • <Ratio of Joint Area>
  • Group III nitride composite substrate 1 in the present reference embodiment needs to have a shear joint strength between support substrate 11 and group III nitride film 13 of 4 MPa or more and 40 MPa or less, and a ratio of the joint area between support substrate 11 and group III nitride film 13 of 60% or more and 99% or less as described above. The relation between support substrate 11 and group III nitride film 13 is thus defined in terms of these two respects, and therefore, group III nitride composite substrate 1 in the present reference embodiment enables a warp of the substrate during epitaxial growth to be remarkably reduced and enables a high-flatness and high-quality epitaxial layer to be grown. Accordingly, the composite substrate has superior effects that the frequency of occurrence of substrate peeling is extremely low in the process of manufacturing a semiconductor device and the yield of manufacture of semiconductor devices is high. In the case where the ratio of the joint area is less than 60%, the frequency of occurrence of substrate peeling is high in the process of epitaxial growth and the process of manufacturing a semiconductor device, resulting in a lower yield of manufacture of semiconductor devices. In the case where the ratio of the joint area is higher than 99%, a greater stress is applied to joint film 12 and a warp is likely to occur to the substrate. Therefore, in this case as well, the yield of manufacture of semiconductor devices is lower.
  • In the present reference embodiment, “ratio of joint area” is a value determined by calculating the sum of areas detected as joint defects (void or peeling) through observation of joint film 12 which is a joint surface between support substrate 11 and group III nitride film 13 with an ultrasonic microscope, dividing the sum by the area of main surface 11 m of support substrate 11, and multiplying the quotient by 100. The ratio of the joint area is more preferably 70% or more and 90% or less, and still more preferably 80% or more and 86% or less. In the case where the ratio of the joint area falls in these ranges, the stress applied to joint film 12 is significantly alleviated, and the yield of manufacture of semiconductor devices can further be increased.
  • As a method for achieving a ratio of the joint area of 60% or more and 99% or less, a method according to which the surface of joint film 12 is cleaned, for example, can be used. Specifically, a method can appropriately be used according to which dirt on the surface of joint film 12 is removed by CMP and thereafter the surface is further subjected to ultrasonic cleaning with water. As a more preferred method, a method can be used according to which dirt on the surface of joint film 12 is removed by CMP and thereafter dirt is further removed by non-abrasive polishing cleaning with a chemical solution such as an aqueous solution of potassium hydroxide (KOH) or water. Both the ultrasonic cleaning and the non-abrasive polishing cleaning, for example, may also be used.
  • The ratio of the joint area can more precisely be controlled by the thickness variation of joint film 12 defined as 2% or more and 40% or less. Namely, it is particularly preferable that the thickness variation of joint film 12 is 2% or more and 40% or less and the ratio of the joint area is 60% or more and 99% or less.
  • <Support Substrate>
  • Support substrate 11 is not particularly limited as long as support substrate 11 can support group III nitride film 13. In order to reduce the amount of use of the expensive group III nitride to thereby lower the cost, however, the support substrate is preferably a hetero-composition substrate whose chemical composition is different from that of the group III nitride. Support substrate 11 may be either transparent or opaque, and one of the transparent one and the opaque one can appropriately be selected depending on a semiconductor device to be used.
  • As the material forming support substrate 11, a conventionally known ceramic material, semiconductor material, metal material, polycrystalline material, monocrystalline material, or the like can be used. For example, the material for support substrate 11 may be a sintered body material of aluminum nitride (AlN), spinel (MgAl2O4), mullite (3Al2O3.2SiO2-2Al2O3.SiO2), alumina (Al2O3), graphite, or the like, a monocrystalline material such as AlN, sapphire, or the like, a metal material such as molybdenum (Mo), tungsten (W), or the like, or an alloy material such as copper-tungsten (Cu—W), or the like.
  • Support substrate 11 may be exposed to a high-temperature corrosive gas such as ammonia gas during epitaxial growth for example, and is therefore preferably a substrate resistant to corrosion. Thus, the substrate may be covered with any of various surface protection coatings for improving the corrosion resistance of its surface.
  • <Thermal Conductivity of Support Substrate>
  • Support substrate 11 has a thermal conductivity λS of preferably 3 W·m−1·K−1 or more and 280 W·m−1·K−1 or less, more preferably 5 W·m−1·K−1 or more and 210 W·m−1·K−1 or less, and still more preferably 10 W·m−1·K−1 or more and 120 W·m−1·K−1 or less. Thermal conductivity λS of support substrate 11 can be measured by a laser flash method. Group III nitride composite substrate 1 having support substrate 11 with a thermal conductivity λS of preferably 3 W·m−1·K−1 or more, more preferably 5 W·m−1·K−1 or more, and still more preferably 10 W·m−1·K−1 or more, can efficiently transmit heat from the main surface of the susceptor to main surface 13 m of group III nitride film 13 of group III nitride composite substrate 1, when a group III nitride layer is grown. Group III nitride composite substrate 1 having support substrate 11 with a thermal conductivity λS of preferably 280 W·m−1·K−1 or less, more preferably 210 W·m−1·K−1 or less, and still more preferably 120 W·m−1·K−1 or less, can uniformly transmit heat from the main surface of the susceptor to the whole main surface of group III nitride film 13 of group III nitride composite substrate 1, when a group III nitride layer is grown. Support substrate 11 having a thermal conductivity λS of 280 W·m−1·K−1 or less can more uniformly transmit the heat from the main surface of the susceptor to the whole main surface of group III nitride film 13 of group III nitride composite substrate 1 when a group III nitride layer is grown, as compared with the case where an SiC substrate having a thermal conductivity λS of about 300 W·m−1·K−1 is used as the support substrate. It should be noted that the thermal conductivity of support substrate 11 may be different from the thermal conductivity of group III nitride film 13.
  • <Thermal Expansion Coefficient of Support Substrate>
  • Support substrate 11 is preferably a substrate which is not prone to crack. The thermal expansion coefficient of support substrate 11 is preferably close to the thermal expansion coefficient of group III nitride film 13. Support substrate 11 having such properties is appropriate, since it makes group III nitride composite substrate 1 less prone to crack even when group III nitride composite substrate 1 is heated in the process of epitaxial growth, the process of manufacturing a semiconductor device, or the like.
  • Specifically, a ratio αIII-N/αS of a thermal expansion coefficient αIII-N of group III nitride film 13 to a thermal expansion coefficient αS of support substrate 11 is preferably 0.75 or more and 1.25 or less, more preferably 0.8 or more and 1.2 or less, still more preferably 0.9 or more and 1.1 or less, and particularly preferably 0.95 or more and 1.05 or less.
  • <Thickness of Support Substrate 11>
  • While the thickness itself of support substrate 11 is not particularly limited, it is preferable that the thickness of support substrate 11 and the thickness of group III nitride film 13 satisfy the following relation, in order to suppress warp, crack, or the like of group III nitride film 13 when it is heated. Namely, a ratio tIII-N/tS of a thickness tIII-N of group III nitride film 13 to a thickness tS of support substrate 11 is preferably 0.02 or more and 1 or less. The fact that the ratio αIII-N/αS of the thermal expansion coefficient is 0.75 or more and 1.25 or less and the ratio tIII-N/tS of the thickness is 0.02 or more and 1 or less makes it possible to significantly reduce occurrences of defective pieces due to warp or crack of group III nitride film 13, on various occasions such as a process of manufacturing the composite substrate, a process of epitaxial growth, and a process of manufacturing a semiconductor device. The ratio tIII-N/tS of the thickness is more preferably 0.07 or more and 0.5 or less.
  • <Young's Modulus of Support Substrate>
  • Regarding Young's modulus ES of support substrate 11, ES is preferably 150 GPa or more and 500 GPa or less, in order to suppress occurrence of warp when group III nitride composite substrate 1 is heated. If ES is less than 150 GPa, warp tends to be likely to occur during heating. If ES is more than 500 GPa, breakage or crack tends to be likely to occur during heating. These ES are therefore not preferred. ES is more preferably in a range of 200 GPa or more and 350 GPa or less. While the Young's modulus of support substrate 11 may be different from that of group III nitride film 13, preferably Young's modulus of support substrate 11 is substantially identical to that of group III nitride film 13.
  • Regarding the material which forms support substrate 11, support substrate 11 may be formed of a material having its thermal expansion coefficient and its Young's modulus that are close to those of group III nitride film 13, such as a substrate formed of mullite (3Al2O3.2SiO2-2Al2O3.SiO2), a substrate formed of mullite-YSZ (Yttria Stabilized Zirconia), a substrate formed of spinel (MgAl2O4), a substrate formed of a sintered body of an Al2O3—SiO2-based composite oxide, and substrates formed respectively of sintered bodies of them to which oxide, nitride, carbonate or the like is added, a molybdenum (Mo) substrate, a tungsten (W) substrate, and the like. Here, preferred elements to be contained in the oxide, the nitride, and the carbonate are Ca, Mg, Sr, Ba, Al, Sc, Y, Ce, Pr, Si, Ti, Zr, V, Nb, Ta, Cr, Mn, Fe, Co, Ni, Cu, Zn, and the like.
  • <Group III Nitride Film>
  • Group III nitride film 13 is a film formed of a group III nitride, specifically an InxAlyGa1-x-yN film (0≦x, 0≦y, x+y≦1) such as GaN film, AlN film, or the like.
  • The thickness of group III nitride film 13 is 10 μm or more and 250 μm or less. In the case where the thickness is less than 10 μm, adequate semiconductor device characteristics tend to fail to be obtained. If the thickness is more than 250 μm, the amount of use of the expensive group III nitride is larger, which makes it difficult to produce a high-value-added semiconductor device. In order to enhance the semiconductor device characteristics, the thickness of group III nitride film 13 is preferably 30 μm or more, more preferably 80 μm or more, and particularly preferably 100 μm or more. In order to produce a high-value-added semiconductor device, the thickness is preferably 200 μm or less, more preferably 180 μm or less, and particularly preferably 130 μm or less.
  • The crystal structure of group III nitride film 13 is preferably the wurtzite structure, since it enables semiconductor devices having excellent characteristics to be produced. The predetermined plane orientation to which the main surface of group III nitride film 13 is closest is not limited as long as it is suitable for a desired semiconductor device, and may be any of {0001}, {10-10}, {11-20}, {21-30}, {20-21}, {10-11}, {11-22}, and {22-43}, as well as plane orientations that are displaced by an angle of 15° or less (off by 15° or less) from these plane orientations, respectively. It may also be any of the plane orientations opposite to the above-listed plane orientations, as well as plane orientations that are 15° or less off from these plane orientations, respectively. Namely, main surface 13 m of group III nitride film 13 may be any of polar plane, nonpolar plane, and semipolar plane. Main surface 13 m of group III nitride film 13 is preferably the {0001} plane and the opposite plane thereof, since such planes make it easy to increase the diameter, or any of {10-10} plane, {20-21} plane, and the opposite planes thereof, since such planes suppress blue shift of a light-emitting device to be produced.
  • Impurity metal atoms in main surface 13 m of group III nitride film 13 are preferably 3×1012 atoms/cm2 or less, more preferably 1×1012 atoms/cm2 or less, and still more preferably 1×1011 atoms/cm2 or less, in order to enhance the crystal quality of a group III nitride layer grown on group III nitride film 13 and enhance the characteristics of a semiconductor device to be formed. Group III nitride composite substrate 1 which includes support substrate 11 such as a substrate of mullite (3Al2O3.2SiO2-2Al2O3.SiO2), mullite-YSZ (Yttria Stabilized Zirconia), spinel (MgAl2O4), a sintered body of an Al2O3—SiO2-based composite oxide, or the like is preferably subjected to cleaning that suppresses elution of metal atoms from support substrate 11, such as scrub cleaning with a surfactant and pure water, two-fluid cleaning, megasonic cleaning, sheet-fed cleaning of a single side with low-concentration acid or alkali, for example, to thereby reduce the concentration of impurity metal atoms in main surface 13 m of group III nitride film 13.
  • Regarding other impurities in main surface 13 m of group III nitride film 13, in order to enhance the crystal quality of a group III nitride layer grown on group III nitride film 13 and enhance the characteristics of a semiconductor device to be formed, the impurities are preferably Cl atoms of 2×1014 atoms/cm2 or less, Si atoms of 9×1013 atoms/cm2 or less. The dislocation density of group III nitride film 13 is not particularly limited. In order to reduce leak current of the semiconductor device, the dislocation density is preferably 1×108 cm−2 or less. The carrier concentration of group III nitride film 13 is not particularly limited. In order to reduce the resistance of the semiconductor device, the carrier concentration is preferably 1×1017 cm−3 or more.
  • The above-described group III nitride composite substrate can be manufactured through the following manufacturing method. Namely, the group III nitride composite substrate obtained through the following manufacturing method can be manufactured at a low cost, has a large diameter, and has a group III nitride film with an appropriate thickness and a high crystal quality.
    • Reference Embodiment III-2 Method for Manufacturing Group III Nitride Composite Substrate
  • Referring now to FIGS. 12 and 14, a method for manufacturing group III nitride composite substrate 1, which is another reference embodiment of Reference Invention III, is not particularly limited as long as it is a method according to which group III nitride film 13 is disposed on support-substrate 11-side main surface 11 n, and may be any of the following first and second methods.
  • The first method is a method as shown in FIG. 12 according to which a group III nitride film donor substrate 13D is bonded to main surface 11 m of support substrate 11, and thereafter group III nitride film donor substrate 13D is cut along a plane located at a predetermined depth from the bonded surface, to thereby form group III nitride film 13 on main surface 11 m of support substrate 11.
  • The second method is a method as shown in FIG. 14 according to which a group III nitride film donor substrate 13D is bonded to main surface 11 m of support substrate 11, and thereafter at least one of grinding, polishing, and etching is performed on a main surface of group III nitride film donor substrate 13D, which is a main surface opposite to the bonded surface thereof, to adjust the thickness by reducing the thickness, and thereby form group III nitride film 13 on main surface 11 m of support substrate 11.
  • Regarding the above-described first and second methods, the method for bonding group III nitride film donor substrate 13D to support substrate 11 may be a method according to which group III nitride film donor substrate 13D is bonded to main surface 11 m of support substrate 11 with a joint film 12 interposed therebetween (see FIGS. 12 and 14), or the like.
  • FIGS. 12 and 14 illustrate a method according to which a joint film 12 a is formed on support substrate 11, a joint film 12 b is formed on group III nitride film 13, and these joint films are bonded to each other. Alternatively, for example, joint film 12 may be formed on only support substrate 11 and this joint film may be bonded to group III nitride film 13.
  • <First Method: Cutting Method>
  • The method for manufacturing a composite substrate by the first method illustrated in FIG. 12 is not particularly limited. In order to efficiently manufacture the composite substrate, the method preferably includes the steps of: forming a joined substrate 1L by bonding support substrate 11 and group III nitride film donor substrate 13D to each other (FIG. 12 (A) to (C)); and cutting group III nitride film donor substrate 13D along a plane located inwardly at a predetermined depth from main surface 13 n, which is the bonded surface, of group III nitride film donor substrate 13D of joined substrate 1L (FIG. 12 (D)).
  • Support substrate 11 is not particularly limited, and can be obtained for example by mixing, at a predetermined molar ratio, MOx (x is an arbitrary positive real number) which is an oxide containing a metal element M, Al2O3 which is an oxide containing Al, and SiO2 which is an oxide containing Si, sintering the resultant mixture, cutting a substrate of a predetermined size from the resultant sintered body, and polishing a main surface of this substrate.
  • Group III nitride film donor substrate 13D is a donor substrate which provides group III nitride film 13 by being separated in a later step. As a method for forming such group III nitride film donor substrate 13D, MOCVD (Metal Organic Chemical Vapor Deposition), sputtering, MBE (Molecular Beam Epitaxy), PLD (Pulsed Laser Deposition), HVPE (Hydride Vapor Phase Epitaxy), sublimation method, flux method, high nitrogen pressure solution method, or the like can appropriately be used.
  • As shown in FIG. 12 (A) to (C), the step of forming joined substrate 1L by bonding support substrate 11 and group III nitride film donor substrate 13D to each other includes: the sub step of forming joint film 12 a on main surface 11 m of support substrate 11 (FIG. 12 (A)); the sub step of forming joint film 12 b on main surface 13 n of group III nitride film donor substrate 13D (FIG. 12 (B)); and the sub step of bonding joint film 12 a formed on main surface 11 m of support substrate 11 and joint film 12 b formed on main surface 13 n of group III nitride film donor substrate 13D to each other (FIG. 12 (C)). These sub steps are performed to join and thereby integrate joint film 12 a and joint film 12 b bonded to each other into joint film 12, and support substrate 11 and group III nitride film donor substrate 13D are joined to each other with joint film 12 interposed therebetween to thereby form joined substrate 1L.
  • Here, the method for forming joint films 12 a, 12 b is not particularly limited. In order to reduce the cost of forming the films, sputtering, vapor deposition, CVD (Chemical Vapor Deposition), or the like is appropriately performed. The method for bonding joint film 12 a and joint film 12 b to each other is not particularly limited, and suitable methods include: a direct bonding method according to which respective surfaces to be bonded to each other are cleaned, directly bonded together, and thereafter heated to approximately 600° C. to 1200° C. so that the joint films are joined together; a surface activated bonding method according to which the surfaces to be bonded to each other are cleaned, subjected to an activation treatment by means of plasma or ions, and thereafter joined together under a low-temperature atmosphere of room temperature (25° C. for example) to 400° C.; a high-pressure bonding method according to which the surfaces to be bonded to each other are cleaned with a chemical solution and pure water and thereafter subjected to a high pressure on the order of 0.1 MPa to 10 MPa so that the joint films are joined together; a high vacuum bonding method according to which the surfaces to be bonded to each other are cleaned with a chemical solution and pure water, and thereafter joined together under a high vacuum atmosphere on the order of 10−6 Pa to 10−3 Pa, and the like. Any of the above-referenced bonding methods can increase the temperature to approximately 600° C. to 1200° C. after the joint films are joined together to thereby further increase the joint strength. In particular, the surface activated bonding method, the high pressure bonding method, and the high vacuum bonding method exhibit a higher effect of increasing the joint strength through the heating to approximately 600° C. to 1200° C. after the joint films are joined together.
  • The step of cutting along a plane located inwardly at a predetermined depth from main surface 13 n, which is the bonded surface, of group III nitride film donor substrate 13D of joined substrate 1L shown in FIG. 12 (D) is performed by cutting group III nitride film donor substrate 13D along a plane located inwardly at a predetermined depth from main surface 13 n, which is the bonded surface, of group III nitride film donor substrate 13D of joined substrate 1L. The method for cutting group III nitride film donor substrate 13D is not particularly limited, and wire saw, inner circumferential blade, outer circumferential blade, or the like is appropriately used.
  • In this way, joined substrate 1L is cut along a plane located inwardly at a predetermined depth from main surface 13 n which is the bonded surface of group III nitride film donor substrate 13D, and accordingly group III nitride composite substrate 1 including support substrate 11, joint film 12 disposed on main surface 11 m of support substrate 11, and group III nitride film 13 disposed on the main surface of joint film 12 is obtained.
  • <Second Method: Grinding, Polishing, and Etching Methods>
  • The method for manufacturing a composite substrate by the second method as illustrated in FIG. 14 is not particularly limited. In order to efficiently manufacture the composite substrate, the method preferably includes the steps of: forming joined substrate 1L by bonding support substrate 11 and group III nitride film donor substrate 13D to each other (FIG. 14 (A) to (C)); and performing at least one of grinding, polishing, and etching on main surface 13 m located opposite to main surface 13 n which is the bonded surface of group III nitride film donor substrate 13D of joined substrate 1L (FIG. 14 (D)).
  • As shown in FIG. 14 (A) to (C), the step of forming joined substrate 1L by bonding support substrate 11 and group III nitride film donor substrate 13D to each other includes: the sub step of forming joint film 12 a on main surface 11 m of support substrate 11 (FIG. 14 (A)); the sub step of forming joint film 12 b on main surface 13 n of group III nitride film donor substrate 13D (FIG. 14 (B)); and the sub step of bonding joint film 12 a formed on main surface 11 m of support substrate 11 and joint film 12 b formed on main surface 13 n of group III nitride film donor substrate 13D to each other (FIG. 14 (C)). These sub steps are performed to join and thereby integrate joint film 12 a and joint film 12 b bonded to each other into joint film 12, and support substrate 11 and group III nitride film donor substrate 13D are joined to each other with joint film 12 interposed therebetween to thereby form joined substrate 1L.
  • The method for forming group III nitride film donor substrate 13D is similar to the method for forming group III nitride film donor substrate 13D according to the first method as described above. The method for forming joint films 12 a, 12 b is also similar to the method for forming joint films 12 a, 12 b in the method for manufacturing a composite substrate according to the first method. The method for bonding support substrate 11 and group III nitride film donor substrate 13D to each other is also similar to the method for bonding support substrate 11 and group III nitride film 13 to each other in the method for manufacturing a composite substrate according to the first method as described above.
  • As shown in FIG. 14 (D), by the step of performing at least one of grinding, polishing, and etching on main surface 13 m opposite to main surface 13 n which is the bonded surface of group III nitride film donor substrate 13D of joined substrate 1L, the thickness of group III nitride film donor substrate 13D is reduced to thereby form group III nitride film 13 having a desired thickness. Accordingly, group III nitride composite substrate 1 including support substrate 11, joint film 12 disposed on main surface 11 m of support substrate 11, and group III nitride film 13 disposed on the main surface of joint film 12 is obtained.
  • Here, the method for grinding group III nitride film donor substrate 13D is not particularly limited, and may be grinding with a grinding wheel (surface grinding), shot blast, or the like. The method for polishing group III nitride film donor substrate 13D is not particularly limited, and may be mechanical polishing, chemical mechanical polishing, or the like. The method for etching group III nitride film donor substrate 13D is not particularly limited, and may be wet etching with a chemical solution, dry etching such as RIE (Reaction Ion Etching), or the like.
  • In this way, group III nitride composite substrate 1 can be manufactured. Group III nitride composite substrate 1 manufactured in the above-described way has excellent effects that a high-quality epitaxial layer can be grown on the composite substrate and the yield of manufacture of semiconductor devices is improved.
    • Reference Embodiment III-3 Laminated Group III Nitride Composite Substrate
  • Referring now to FIG. 8, a laminated group III nitride composite substrate 2 which is still another embodiment of Reference Invention III will be described.
  • Laminated group III nitride composite substrate 2 includes group III nitride composite substrate 1 of Reference Embodiment III-1, and at least one group III nitride layer 20 disposed on group III-nitride-film 13-side main surface 13 m of group III nitride composite substrate 1.
  • Thus, group III nitride layer 20 is disposed on group III-nitride-film 13-side main surface 13 m of group III nitride composite substrate 1 and therefore, group III nitride layer 20 can be grown as a high-quality epitaxial layer.
  • In laminated group III nitride composite substrate 2 of the present reference embodiment, group III nitride layer 20 disposed on group III-nitride-film 13-side main surface 13 m varies depending on the type of the semiconductor device to be produced. Referring to FIG. 9, in the case where the semiconductor device to be produced is a light-emitting device, group III nitride layer 20 may be configured to include, for example, an n-GaN layer 21, an n-In0.05Ga0.95N layer 22, an active layer 23 having a multiple quantum well structure, a p-Al0.09Ga0.95N layer 24, and a p-GaN layer 25. Referring to FIG. 10, in the case where the semiconductor device to be produced is an HEMT (High Electron Mobility Transistor) which is an example of electronic devices, the group III nitride layer may be configured to include, for example, a GaN layer 26 and an Al0.2Ga0.8N layer 27. Referring to FIG. 11, in the case where the semiconductor device to be produced is an SBD (Schottky Barrier Diode) which is another example of electronic devices, the group III nitride layer may be configured to include, for example, an n+-GaN layer 28 (having a carrier concentration for example of 2×1018 cm−3) and an n−-GaN layer 29 (having a carrier concentration for example of 5×1015 cm−3).
    • Reference Embodiment III-4 Group III Nitride Semiconductor Device
  • Referring now to FIGS. 9 and 10, a group III nitride semiconductor device 4 which is a further reference embodiment of Reference Invention III will be described.
  • Group III nitride semiconductor device 4 includes group III nitride film 13 in the group III nitride composite substrate of Reference Embodiment III-1, and at least one group III nitride layer 20 disposed on group III nitride film 13.
  • Thus, group III nitride semiconductor device 4 in the present reference embodiment includes: group III nitride composite substrate 1 which includes group III nitride film 13 having a thickness of 10 μm or more and 250 μm or less; and group III nitride layer 20 with a remarkably high crystal quality grown and thereby disposed on the composite substrate, and therefore has excellent semiconductor characteristics.
  • In group III nitride semiconductor device 4, group III nitride layer 20 varies depending on the type of group III nitride semiconductor device 4. As shown in FIG. 9, in the case where group III nitride semiconductor device 4 is a light-emitting device, group III nitride layer 20 may be configured to include, for example, an n-GaN layer 21, an n-In0.05Ga0.95N layer 22, an active layer 23 having a multiple quantum well structure, a p-Al0.09Ga0.91N layer 24, and a p-GaN layer 25. As shown in FIG. 10, in the case where group III nitride semiconductor device 4 is an HEMT which is an example of electronic devices, group III nitride layer 20 may be configured to include, for example, a GaN layer 26 and an Al0.2Ga0.8N layer 27, and a source electrode 60, a drain electrode 70, a gate electrode 80, and the like can be formed on Al0.2Ga0.8N layer 27. As shown in FIG. 11, in the case where the semiconductor device is an SBD which is another example of electronic devices, the group III nitride layer may be configured to include, for example, an n+-GaN layer 28 (having a carrier concentration for example of 2×1018 cm−3) and an n−-GaN layer 29 (having a carrier concentration for example of 5×1015 cm−3).
  • As shown in FIGS. 9 and 10, preferably group III nitride semiconductor device 4 further includes at least one of support substrate 11 and a device support substrate 40 for supporting group III nitride layer 20. Here, the shape of device support substrate 40 is not limited to the shape of a flat plate, and may be any as long as it supports group III nitride film 13 and group III nitride layer 20 so that group III nitride semiconductor device 4 can be formed.
  • The group III nitride semiconductor device in the reference embodiment as described above can be manufactured by the following manufacturing method. Namely, by the following manufacturing method, group III nitride semiconductor devices can be manufactured at a low cost and with a high yield, and have remarkably excellent semiconductor characteristics.
    • Reference Embodiment III-5 Method for Manufacturing Group III Nitride Semiconductor Device
  • Referring now to FIG. 15, a method for manufacturing a group III nitride semiconductor device which is a further reference embodiment of Reference Invention III will be described.
  • The method for manufacturing a group III nitride semiconductor device in the present reference embodiment includes the steps of: preparing group III nitride composite substrate 1; and growing at least one group III nitride layer 20 on group III-nitride-film 13-side main surface 13 m of group III nitride composite substrate 1.
  • Here, the step of preparing group III nitride composite substrate 1 is similar to that of the method for manufacturing a group III nitride composite substrate described above in connection with Reference Embodiment III-2. Therefore, the same description will not be repeated. In the following, the steps after the step of preparing group III nitride composite substrate 1 will be described.
  • The method for manufacturing a group III nitride semiconductor device in the present reference embodiment includes, as shown in FIG. 15, the step of growing at least one group III nitride layer 20 on group III-nitride-film 13-side main surface 13 m of group III nitride composite substrate 1 (FIG. 15 (A)). The method for manufacturing a group III nitride semiconductor device in the present reference embodiment can be used to manufacture group III nitride semiconductor devices having excellent characteristics with a high yield, since the group III nitride layer is grown on group III-nitride-film 13-side main surface 13 m when the group III nitride layer is grown.
  • The method for manufacturing a group III nitride semiconductor device in the present reference embodiment can further include the step of further bonding device support substrate 40 onto group III nitride layer 20 (FIG. 15 (B)), and the step of removing support substrate 11 from group III nitride composite substrate 1 (FIG. 15 (C)). These steps can be added to enable group III nitride semiconductor devices having a high mechanical strength and excellent characteristics and supported by device support substrate 40 to be manufactured with a high yield. In the following, each step will be described specifically.
  • <Step of Growing Group III Nitride Layer>
  • In the step of growing at least one group III nitride layer 20 on group III-nitride-film 13-side main surface 13 m of group III nitride composite substrate 1 as shown in FIG. 15 (A), suitable methods for growing group III nitride layer 20 are gas phase methods such as MOVPE, MBE, HVPE, and sublimation method, as well as liquid phase methods such as flux method, in order to epitaxially grow group III nitride layer 20 having a high crystal quality, and a particularly suitable method is MOVPE.
  • The structure of group III nitride layer 20 varies depending on the type of group III nitride semiconductor device 4. In the case where group III nitride semiconductor device 4 is a light-emitting device, group III nitride layer 20 may be configured by successively growing, on group III nitride film 13, for example, an n-GaN layer 21, an n-In0.05Ga0.95N layer 22, an active layer 23 having a multiple quantum well structure, a p-Al0.09Ga0.91N layer 24, and a p-GaN layer 25.
  • In this way, at least one group III nitride layer 20 is grown on group III nitride film 13 of group III nitride composite substrate 1, and accordingly laminated group III nitride composite substrate 2 is obtained.
  • <Step of Bonding Device Support Substrate>
  • The step of further bonding device support substrate 40 onto group III nitride layer 20 as shown in FIG. 15 (B) is performed by forming a first electrode 30 and a pad electrode 33 on group III nitride layer 20 of laminated group III nitride composite substrate 2, forming a pad electrode 43 and a joint metal film 44 on device support substrate 40, and bonding joint metal film 44 to pad electrode 33. Through these steps, laminated substrate 3 is obtained. As device support substrate 40, Si substrate, CuW substrate, or the like is used.
  • <Step of Removing Support Substrate>
  • The step of removing support substrate 11 from group III nitride composite substrate 1 as shown in FIG. 15 (C) is performed by removing support substrate 11 of group III nitride composite substrate 1 from laminated substrate 3. Thus, joint film 12 interposed between support substrate 11 and group III nitride film 13 can simultaneously be removed.
  • The method for removing support substrate 11 and joint film 12 is not particularly limited, and suitable methods to be used are grinding, etching, and the like. For example, support substrate 11 formed of a material which is low in hardness, strength, and wear resistance, and is likely to be ground off, can be removed by at least one of grinding and polishing, in order to reduce the manufacturing cost. Support substrate 11 formed of a material which can be dissolved in a chemical solution such as acid solution or alkali solution, can be removed through etching with a chemical solution, since it requires low manufacturing cost. As support substrate 11, a support substrate formed of a polycrystalline material such as ceramic material is more preferred as compared with a support substrate formed of a monocrystalline material such as sapphire, SiC, group III nitride (GaN for example), or the like, since the support substrate 11 of the polycrystalline material is easier to remove.
  • <Step of Forming Electrode>
  • As shown in FIG. 15 (D), on group III nitride film 13 which has been exposed after removal of support substrate 11 and joint film 12 from laminated substrate 3, a second electrode 50 is formed and, on device support substrate 40, a device support substrate electrode 45 is formed.
  • In this way, group III nitride semiconductor devices having remarkably excellent characteristics can be manufactured with a high yield.
    • EXAMPLES
  • Examples 1 to 5 and Comparative Examples 1 to 2 according to the present invention will be illustrated below.
    • Example 1 1. Fabrication of Group III Nitride Composite Substrate
  • (1) Bonding Group III Nitride Film and Support Substrate
  • Referring to FIG. 4 (A), group III nitride film 13 and support substrate 11 were bonded to each other in the following way.
  • Referring to FIG. 4 (A1), support substrate 11 was prepared. Specifically, three mullite (Al2O3—SiO2) substrates each having two main surfaces both polished into a mirror surface (flat surface having an arithmetic mean roughness Ra defined under JIS B0601 of 1 nm or less, this definition will be applied hereinafter) and having a diameter of 10.0 cm and a thickness of 500 μm were prepared. On main surface 11 m of this support substrate 11, an SiO2 film of 1 μm in thickness was formed as joint film 12 a by CVD.
  • Referring to FIG. 4 (A2), group III nitride film 13 was prepared. Specifically, three different GaN films A to C each having two main surfaces both polished into a mirror surface and having a diameter of 10.0 cm and a thickness of 400 μm were prepared. GaN film A was not actively doped with a conductivity improver impurity. GaN film B was doped with O (oxygen) atoms serving as a conductivity improver impurity at a concentration of 7×1017 cm−3. GaN film C was doped with O (oxygen) atoms serving as a conductivity improver impurity at a concentration of 1.6×1018 cm−3.
  • On main surface 13 n which was a (000-1) plane corresponding to an N atomic plane of group III nitride film 13, an SiO2 film of 1 μm in thickness was formed as joint film 12 b by CVD.
  • Referring next to FIG. 4 (A3), each of main surface 12 am of joint film 12 a formed on support substrate 11 and main surface 12 bn of joint film 12 b formed on group III nitride film 13 was polished into a mirror surface, and thereafter main surface 12 am of joint film 12 a and main surface 12 bn of joint film 12 b were bonded to each other. Annealing was performed by raising the temperature to 700° C. in an N2 gas (nitrogen gas) atmosphere to thereby increase the joint strength.
  • The three different bonded substrates in which they were thus bonded to each other were each cut by dicing into eight bonded substrate pieces having a main surface of 20 mm×20 mm (square of 20 mm×20 mm, which will also be applied hereinafter).
  • (2) Adjustment of Thickness of Group III Nitride Film
  • Referring to FIG. 4 (B), the thickness of group III nitride film 13 of the eight bonded substrate pieces obtained from each of the three different bonded substrates was adjusted by polishing the main surface so that respective group III nitride films were 5 μm, 8 μm, 10 μm, 20 μm, 50 μm, 100 μm, 200 μm, and 500 μm. Thus, eight group III nitride composite substrates were obtained.
    • 2. Measurement of Sheet Resistance of Group III-Nitride-Film-Side Main Surface of Group III Nitride Composite Substrate
  • For the 24 group III nitride composite substrates 1 obtained from the three different bonded substrates produced in the above-described manner (eight group III nitride composite substrates per each of the three different bonded substrates), the sheet resistance of group III-nitride-film 13-side main surface 13 m was measured by the four-terminal method. The results are summarized in Table 1.
  • TABLE 1
    group III nitride film sheet resistance
    type thickness (μm) (Ω/sq)
    GaN film 5 403.6
    A 8 250.8
    10 196.1
    20 101.6
    50 41.5
    100 19.8
    200 9.7
    500 3.8
    GaN film 5 157.7
    B 8 101.3
    10 78.9
    20 39.2
    50 18.1
    100 7.4
    200 3.7
    500 1.3
    GaN film 5 40.7
    C 8 24.5
    10 19.4
    20 9.7
    50 3.6
    100 1.7
    200 0.9
    500 0.3
    • 3. Fabrication of Group III Nitride Semiconductor Device
  • Referring to FIG. 5, on main surface 13 m which was a (0001) plane corresponding to a group III atomic plane of group III nitride film 13 in group III nitride composite substrate 1, group III nitride layer 20 was grown by MOCVD. Specifically, an n-type GaN layer having a thickness of 5 μm which was first-conductivity-type GaN layer 201, an n-type Al0.05Ga0.95N layer having a thickness of 0.5 μm which was first-conductivity-type AlsGa1-sN layer 202 (here, s meets 0<s<1), an MQW (Multiple Quantum Well) structure layer having a thickness of 100 nm and made up of six cycles of In0.15Ga0.85N layer and In0.01Ga0.99N layer which was light-emitting layer 203, a p-type Al0.20Ga0.80N layer having a thickness of 20 nm which was second-conductivity-type AltGa1-tN layer 204 (here, t meets 0<t<1), and a p-type GaN layer having a thickness of 0.15 μm which was second-conductivity-type GaN layer 205 were grown in this order.
  • Next, second-conductivity-type GaN layer 205, second-conductivity-type AltGa1-tN layer 204, light-emitting layer 203, and first-conductivity-type AlsGa1-aN layer 202 were each partially removed by mesa etching to expose a part of first-conductivity-type GaN layer 201.
  • Next, on the exposed main surface of first-conductivity-type GaN layer 201, an n-side electrode was formed as first electrode 31 by electron beam vapor deposition. In addition, on the exposed main surface of second-conductivity-type GaN layer 205, a p-side electrode was formed as second electrode 32 by electron beam vapor deposition. In this way, 24 group III nitride semiconductor devices were fabricated.
  • A reference group III nitride semiconductor device was prepared in the following way. On main surface 13 m of the GaN substrate that was a (0001) plane corresponding to a group III atomic plane, namely Ga atomic plane, group III nitride layer 20 of the same structure as the above-described one was formed in a similar manner to the above-described one. The GaN substrate had the two main surfaces both polished into a mirror surface and having a size of 20 mm×20 mm and a thickness of 500 μm, and was doped with a conductivity improver impurity, namely O (oxygen) atoms, at a concentration of 1.6×1018 cm−3.
    • 4. Measurement of Emission Intensity of Group III Nitride Semiconductor Device
  • The emission intensity of the 24 group III nitride semiconductor devices and the reference group III nitride semiconductor device obtained as described above was measured in the following way. Current of 80 mA was applied to the group III nitride semiconductor device. The emission intensity at a peak wavelength of 450 nm of the emission spectrum at this time was measured by the EL (Electro Luminescence) method. The ratio of the emission intensity of each of the 24 group III nitride semiconductor devices, relative to the emission intensity of the reference group III nitride semiconductor device, was calculated for use as a relative emission intensity. A light-emitting device having a group III nitride composite substrate including GaN film A of 5 μm in thickness and having a sheet resistance of 403.6 Ω/sq, and a light-emitting device having a group III nitride composite substrate including GaN film A of 8 μm in thickness and having a sheet resistance of 250.8 Ω/sq each had a low relative emission intensity of 0.01 or less. The relative emission intensity of light-emitting devices having the other group III nitride composite substrates had a higher relative emission intensity of 0.1 or more.
    • Example 2
  • As group III nitride films 13, 20 GaN films having a diameter of two inches (5.08 cm) and a thickness of 500 μm, doped with O (oxygen) atoms which were a conductivity improver impurity at a concentration of 7×1017 cm−3, and having two main surfaces both polished into a mirror surface were prepared.
  • Of these GaN films, ten GaN films were polished so that the thickness was reduced to 200 μm. As a result, breakage and/or cracks occurred to seven GaN films out of the ten GaN films.
  • To the remaining ten GaN films each, a mullite substrate having a diameter of two inches (5.08 cm) and a thickness of 400 μm was bonded through a similar procedure to Example 1, and thereafter the bonded GaN film was polished so that the thickness was reduced to 200 μm. Then, no breakage and/or cracks occurred to all of the ten GaN films.
    • Example 3
  • Six group III nitride composite substrates 1 were fabricated through a similar procedure to Example 1, except that a GaN film having a diameter of two inches (5.08 cm) and a thickness of 500 μm, doped with no conductivity improver impurity, and having two main surfaces both polished into a mirror surface was used as group 111 nitride film 13, and that a watermark was formed on the surface to be bonded to thereby change the area of the bonded region. Here, the watermark is a dry stain formed as follows. As moisture in a portion of a surface where an impurity is present due to cleaning contamination or the like is dried, the portion is dried with the impurity aggregated, and accordingly the dry stain is formed. The watermark can be formed by wetting a surface where the watermark is to be formed, with low-purity water rather than ultrapure water and drying it to thereby form the watermark in the portion wet with the low-impurity water.
  • For the obtained six group III nitride composite substrates 1, the area of joined region 100 b was measured with a surface defect inspection apparatus using a laser. As a result, respective areas of the joined regions of the substrates relative to the area of main surface 1 m were 34%, 57%, 64%, 70%, 87%, and 95%. Of these group III nitride composite substrates, group III nitride composite substrates 1 in which the area of joined region 100 b was 70% or more relative to the area of main surface 1 m had non-joined partial regions constituting non-joined region 100 n that all had a maximum size in radial direction of less than 20 mm. As for group III nitride composite substrates 1 in which the area of joined region 100 b was 64% or less relative to the area of main surface 1 m, some non-joined partial regions constituting non-joined region 100 n had a maximum size in radial direction of 20 mm or more. Moreover, group 111 nitride composite substrates 1 in which the area of joined region 100 b was 64% or less relative to the area of main surface 1 m were heated to 700° C. As a result, group III nitride film 13 was peeled off during the heating, from support substrate 11 from the non-joined partial region with a maximum size in radial direction of 20 mm or more.
    • Example 4
  • Three group III nitride composite substrates 1 were fabricated through a similar procedure to Example 1, except that: a GaN film having a diameter of two inches (5.08 cm) and a thickness of 500 μm, doped with no conductivity improver impurity, and having two main surfaces both polished into a mirror surface was used as group III nitride film 13; a polycrystalline Mo substrate having a diameter of two inches (5.08 cm) and a thickness of 500 μm and having two main surfaces both polished into a mirror surface was used as support substrate 11; the surfaces to be bonded to each other were cleaned in the process of bonding to thereby reduce generation of non-joined regions; and a water mark having a diameter on the order of 15 mm was formed on the surface to be bonded to thereby form a non-joined region at a predetermined position of the group III nitride composite substrate.
  • For the obtained three group III nitride composite substrates 1, the position of the non-joined region was measured with an ultrasonic microscope. As a result, in one group III nitride composite substrate, there was formed the non-joined region including a non-joined partial region having a maximum size in radial direction on the order of 10 mm and abutting on the perimeter of the main surface. In another group III nitride composite substrate, there was formed the non-joined region including only a non-joined partial region having a maximum size in radial direction on the order of 10 mm and failing to abut on the perimeter of the main surface. In the remaining one group III nitride composite substrate, the area of the non-joined region was 83% relative to the area of the main surface.
  • The obtained three group III nitride composite substrates were heated to 700° C. As a result, the group III nitride composite substrate in which there was formed the non-joined region including the non-joined partial region which had a maximum size in radial direction on the order of 10 mm and abutted on the perimeter of the main surface was broken during the heating. The remaining group III nitride composite substrates were not broken.
    • Example 5
  • As group III nitride films, eight GaN films whose two main surfaces were both polished into a mirror surface, main surface was 20 mm×20 mm, and thickness was 300 μm were prepared. The eight GaN films were divided into four sets each including two GaN films, and main-surface through holes having a diameter on the order of 50 μm were formed so that the area of the main-surface through holes relative to the area of the main surface were 5%, 10%, 20%, and 30%, respectively in these four sets.
  • Moreover, eight substrates were prepared in which the support substrate was a sapphire substrate whose main surface was 20 mm×20 mm and thickness was 400 μm and an SiO2 film was formed as the joint film on the main surface of the sapphire substrate. The main surface of the joint film was polished into a mirror surface. After this, four of the eight substrates were cleaned multiple times in an aqueous solution containing 37% by mass of HCl (hydrochloric acid) and 30% by mass of H2O2 (hydrogen peroxide), to thereby remove an impurity containing metal on the surface to be bonded. The remaining four substrates were cleaned with IPA (isopropyl alcohol).
  • The four group III nitride films in which respective areas of the main-surface through holes were 5%, 10%, 20%, and 30% relative to the area of the main surface, and the four support substrates in which the surface of the joint film to be bonded was cleaned with HCl and H2O2 were bonded to each other under similar conditions to Example 1. Further, the four group III nitride films in which respective areas of the main-surface through holes were 5%, 10%, 20%, and 30% relative to the area of the main surface and the four support substrates in which the surface of the joint film to be bonded was cleaned with IPA were bonded to each other under similar conditions to Example 1.
  • After they were thus bonded to each other, a tensile test was performed in the following way. The tensile test was performed by attaching a jig of 10 mm×10 mm with an epoxy adhesive to the front and rear sides of the group III nitride composite substrate and pulling both ends of the jig. The results are summarized in Table 2. In Table 2, the composite substrates on which fracture occurred between the epoxy adhesive and the jig exhibit a higher joint strength than those in which the group III nitride film and the joint film are separated from each other along their interface.
  • TABLE 2
    area (%) of main-
    method for surface through hole
    cleaning in group III nitride
    surface to film relative to area region of fracture and form of
    be bonded of main surface fracture under tensile test
    cleaning with 5 fracture along interface between
    HCl and H2O2 epoxy adhesive and jig
    10 separation along interface between
    group III nitride film and joint film
    20 separation along interface between
    group III nitride film and joint film
    30 separation along interface between
    group III nitride film and joint film
    cleaning with 5 fracture along interface between
    IPA epoxy adhesive and jig
    10 fracture along interface between
    epoxy adhesive and jig
    20 separation along interface between
    group III nitride film and joint film
    30 separation along interface between
    group III nitride film and joint film
  • Referring to Table 2, the composite substrates which were cleaned with IPA had a higher joint strength where the area of the main-surface through hole of the group 111 nitride film was 10% or less relative to the area of the main surface. In addition, the concentration of an impurity containing metal on the surface to be bonded of the joint film cleaned with HCl and H2O2 and that of the joint film cleaned with IPA were measured by TXRF (total reflection x-ray fluorescence) analysis. Those cleaned with HCl and H2O2 had an Fe concentration and an Ni concentration which were both 1×1010 cm−2 or less. Those cleaned with IPA had an Fe concentration of 5.7×1011 cm−2 and an Ni concentration of 1.5×1011 cm−2.
    • Comparative Example 1
  • As the group III nitride film, one GaN film having a diameter of two inches (5.08 cm) and a thickness of 400 μm, doped with O (oxygen) atoms at a concentration of 6×1017 cm−3 which was a conductivity improver impurity, and having two main surfaces both polished into a mirror surface was prepared. In a main surface, which was an N atomic surface of the group III nitride film, H (hydrogen) ions were implanted to a position at a depth of about 0.7 μm from the main surface. The H ions were implanted with an acceleration voltage of 100 keV and a dose of 5×1017 cm−2 The main surface, where the H ions were implanted, of the group III nitride film implanted with the H ions, and a mullite substrate having a diameter of two inches (5.08 cm) and a thickness of 500 μm, were bonded to each other and annealed through a similar procedure to Example 1. Accordingly, the group III nitride film was separated along the region where the H ions were implanted, so that a group III nitride composite substrate in which a group III nitride film of 0.3 μm in thickness is formed on the mullite substrate was obtained. The sheet resistance of the obtained group III nitride composite substrate was 1×1010 Ω/sq or more.
    • Comparative Example 2
  • A group III nitride composite substrate having a group III nitride film of 0.3 μm in thickness on an Mo substrate was produced through a similar procedure to Comparative Example 1, except that the Mo substrate having a diameter of two inches (5.08 cm) and a thickness of 300 μm and having two main surfaces both polished into a mirror surface was used as the support substrate, and that the dose of H ions was 3.5×1017 cm−2. The obtained group III nitride composite substrate was further heat-treated at 800° C. for three hours in an N2 gas (nitrogen gas) atmosphere. Accordingly, the sheet resistance was reduced to 6700 Ω/sq in most of the region, while the sheet resistance was still a high resistance of 35000 Ω/sq in a part of the region.
  • Reference Example I-A to Reference Example I-I according to Reference Invention I will be illustrated below.
    • Reference Example I-A 1. Fabrication of Group III Nitride Composite Substrate
  • Referring to FIG. 12 (A), a mullite substrate having a diameter of 75 mm was prepared for use as support substrate 11. Both surfaces of support substrate 11 were subjected to rough polishing by means of diamond abrasive grains and a copper-based surface plate, intermediate polishing by means of diamond abrasive grains and a tin surface plate, and finish polishing by means of a nonwoven polishing pad so that the surfaces were mirror-finished to have an RMS (root mean square roughness) of 5 nm or less. After this, an SiO2 film was grown on this to a thickness of 800 nm by the LP-CVD (Low Pressure-Chemical Vapor Deposition) method. Then, CMP was performed using a slurry having a pH of 10 and containing colloidal silica abrasive grains having an average grain size of 40 nm, to thereby form joint film 12 a having a thickness of 400 nm and planarized so that the RMS of the main surface was 0.3 nm or less. In order to remove abrasive grains used for CMP, non-abrasive polishing cleaning with a KOH aqueous solution and cleaning with pure water were performed.
  • Referring to FIG. 12 (B), a GaN crystal body having a diameter of 75 mm and a thickness of 8 mm was prepared for use as group III nitride film donor substrate 13D. A surface-to-be-bonded of group III nitride film donor substrate 13D was subjected to mechanical polishing and CMP so that it was mirror-finished to have an RMS of 2 nm or less. After this, an SiO2 film having a thickness of 800 nm was grown by the LP-CVD (Low Pressure-Chemical Vapor Deposition) method on the surface-to-be-bonded, and CMP was performed using a slurry having a pH of 10 and containing colloidal silica abrasive grains having an average grain size of 40 nm, to thereby form joint film 12 b having a thickness of 500 nm and having a main surface planarized to have an RMS of 0.3 nm or less. In order to remove abrasive grains used for CMP, non-abrasive polishing cleaning with a KOH aqueous solution and cleaning with pure water were performed. Here, group III nitride film donor substrate 13D was produced through growth by the HVPE method using a GaAs substrate as a base substrate.
  • Referring to FIG. 12 (C), joint film 12 a and joint film 12 b were bonded together to thereby produce joined substrate 1L in which support substrate 11 and group III nitride film 13 were bonded to each other with joint film 12 interposed therebetween. After they were bonded together, joined substrate 1L was annealed by being heated in a nitrogen gas atmosphere to 800° C., to thereby increase the joint strength.
  • Referring to FIG. 12 (D), group III nitride film donor substrate 13D in joined substrate 1L was cut, with a wire saw, along a plane located inwardly at a depth of 180 μm from the bonded surface, namely the surface of group III nitride film donor substrate 13D bonded to joint film 12, to thereby produce group III nitride composite substrate 1 in which support substrate 11 and the GaN film which was group III nitride film 13 were bonded together with joint film 12 interposed therebetween. As the wire, a fixed-abrasive wire on which diamond abrasive grains were electrodeposited was used. As for the cutting method, in order to reduce the cut resistance and enhance the thickness precision and the flatness, the method was used that caused the wire to swing and caused group III nitride film donor substrate 13D to vibrate in synchronization therewith. The resistance coefficient for cutting with the wire saw was set to 4200 N. After cutting, group III nitride film 13 of group III nitride composite substrate 1 was subjected to mechanical polishing and CMP. In order to have a uniform thickness and a uniform off angle of group III nitride film 13, the composite substrate was mounted on a CMP apparatus in the following way. The shape of the substrate was corrected in advance by vacuum chuck suction, and thereafter the composite substrate was suction-fixed onto the apparatus.
  • Regarding group III nitride composite substrate 1 thus produced, the ratio st/mt of standard deviation st of the thickness of group III nitride film 13, to mean value mt of the thickness thereof, and the ratio so/mo of standard deviation so of an absolute value of an off angle between the main surface of the group III nitride film and the (0001) plane, to mean value mo of the absolute value of the off angle thereof are shown in Table 3. Here, mean value mt of the thickness, standard deviation st of the thickness, mean value mo of the absolute value of the off angle, and standard deviation so of the absolute value of the off angle, were calculated from the thickness and the absolute value of the off angle of group III nitride film 13 at the 13 measurement points P on main surface 13 m of group III nitride film 13 as shown in FIG. 7, constituted of: one central point PC; four outer points PO located respectively in the four directions with respect to central point PC that are orthogonal to each other, the outer points each being located at 5 mm inward from the outer edge of the substrate; and eight middle points PM including four middle points each between the one central point PC and one of the four outer points PO and four middle points each between two of the four outer points PO.
    • 2. Fabrication of Group III Nitride Semiconductor Device
  • Referring to FIG. 15 (A), on group III nitride film 13 of group TIT nitride composite substrate 1, group III nitride layer 20 was formed by the MOVPE method. Specifically, on group III nitride film 13, n-GaN layer 21 having a thickness of 5 μm, n-In0.05Ga0.95N layer 22 having a thickness of 50 nm, active layer 23 having a multiple quantum well structure of three cycles constituted of an In0.14Ga0.86N well layer having a thickness of 3 nm and a GaN barrier layer having a thickness of 15 nm, p-Al0.09Ga0.91N layer 24 having a thickness of 20 nm, and p-GaN layer 25 having a thickness of 150 nm were successively epitaxially grown to thereby produce laminated group III nitride composite substrate 2. After this, it was annealed by an RTA (Rapid Thermal Annealing) apparatus and accordingly activated.
  • Referring to FIG. 15 (B), on p-GaN layer 25, which was the topmost layer in group III nitride layer 20 of laminated group III nitride composite substrate 2, an Ni layer having a thickness of 4 nm and an Au layer having a thickness of 200 nm were successively formed by the EB (Electron Beam) deposition method, and annealed into an alloy, to thereby form first electrode 30. On first electrode 30, a Ti layer having a thickness of 200 nm, a Pt layer having a thickness of 100 nm, and an Au layer having a thickness of 1000 nm were successively formed by the EB deposition method to thereby form pad electrode 33.
  • A CuW substrate was prepared for use as device support substrate 40. On device support substrate 40, a Ti layer having a thickness of 200 nm, a Pt layer having a thickness of 100 nm, and an Au layer having a thickness of 1000 nm were successively formed by the EB deposition method to thereby form pad electrode 43. On pad electrode 43, an AuSn solder film was formed as joint metal film 44.
  • Subsequently, joint metal film 44 was bonded to pad electrode 33 to thereby produce laminated substrate 3.
  • Referring to FIG. 15 (C), from laminated substrate 3, support substrate 11 and joint film 12 in group III nitride composite substrate 1 were etched away by means of hydrofluoric acid.
  • Referring to FIG. 15 (D), on group III nitride film 13 having been exposed by removal of support substrate 11 and joint film 12 from laminated substrate 3, a Ti layer having a thickness of 20 nm, an Al layer having a thickness of 200 nm, and an Au layer having a thickness of 300 nm were successively formed by the EB deposition method, and then annealed to form second electrode 50. On device support substrate 40, a Ti layer having a thickness of 20 nm and an Au layer having a thickness of 300 nm were successively formed by the EB deposition method, and annealed to thereby form device support substrate electrode 45. In this way, group III nitride semiconductor device 4 was obtained.
  • For group III nitride semiconductor device 4 thus obtained, its optical output was measured by means of an integrating sphere under the condition that injected current was 4 A. The optical output of the light-emitting device was measured in the following way. Specifically, into the light-emitting device mounted in the integrating sphere, predetermined current was injected, and the optical output was measured by a detector receiving the light collected from the light-emitting device. The resultant group III nitride semiconductor devices were classified into non-defective devices meeting a standard that the optical output was 2 W or more and defective devices failing to meet this standard, and the percentage of the ratio determined by dividing the non-defective devices by the sum of the non-defective devices and the defective devices was defined as a yield. The yield of the group III nitride semiconductor devices is summarized in Table 3.
  • TABLE 3
    Reference Example I-A
    I-A1 I-A2 I-A3 I-A4 I-A5 I-A6 I-A7 I-A8 I-A9
    ratio st/mt 0.001 0.002 0.01 0.05 0.1 0.15 0.2 0.25 0.2
    ratio so/mo 0.005 0.008 0.05 0.2 0.4 0.5 0.6 0.6 0.7
    device yield (%) 78 77 75 72 68 62 58 35 32
  • Referring to Table 3, group III nitride semiconductor devices manufactured with a high yield were those using a group III nitride composite substrate having a diameter of 75 mm and including a group III nitride film having a thickness of 150 μm, where the ratio st/mt of standard deviation st of the thickness of the group III nitride film, to mean value mt of the thickness thereof was 0.001 or more and 0.2 or less, and the ratio so/mo of standard deviation so of an absolute value of an off angle between the main surface of the group III nitride film and the (0001) plane, to mean value mo of the absolute value of the off angle thereof was 0.005 or more and 0.6 or less. It should be noted that, as to Reference Example I-A1, sophisticated control was necessary for cutting and polishing in order to reduce the thickness variation and the off-angle variation, and thus the cutting and polishing took a long time.
    • Reference Example I-B
  • Referring to FIGS. 12 and 15, group III nitride composite substrate 1 and group III nitride semiconductor device 4 were produced in a similar manner to Reference Example I-A, except that a mullite-YSZ substrate (with respect to the whole substrate, mullite was 70% by mass and YSZ was 30% by mass and, with respect to YSZ, ZrO2 was 90% by mole and Y2O3 was 10% by mole) was used as support substrate 11, and group III nitride composite substrates 1 having a diameter of 75 mm, a diameter of 100 mm, a diameter of 125 mm, and a diameter of 150 m, respectively, were produced.
  • In a similar manner to Reference Example I-A, the ratio st/mt of standard deviation st of the thickness of group III nitride film 13, to mean value mt of the thickness thereof, and the ratio so/mo of standard deviation so of an absolute value of an off angle between the main surface of the group III nitride film and the (0001) plane, to mean value mo of the absolute value of the off angle thereof were calculated for group III nitride composite substrate 1. The results are summarized in Table 4. The yield of group III nitride semiconductor devices 4 was also calculated in a similar manner to Reference Example I-A. The results are summarized in Table 4.
  • TABLE 4
    Reference Example I-B
    I-B1 I-B2 I-B3 I-B4 I-B5 I-B6 I-B7 I-B8 I-B9 I-B10 I-B11 I-B12 I-B13 I-B14
    diameter (mm) 75 75 75 75 75 100 100 100 100 125 150 150 75 100
    thickness of group 10 30 100 170 200 10 110 170 200 110 120 160 250 250
    III nitride film (μm)
    ratio st/mt 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12
    ratio so/mo 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3
    device yield (%) 60 63 70 72 61 59 71 73 60 72 71 72 59 58
  • Referring to Table 4, group III nitride semiconductor devices manufactured with a high yield were those using a group III nitride composite substrate having a diameter of 75 mm to 150 mm and including a group III nitride film having a thickness of 10 μm to 250 μm, where the ratio st/mt of standard deviation st of the thickness of the group III nitride film, to mean value mt of the thickness thereof was 0.12 falling within a range of 0.001 or more and 0.2 or less, and the ratio so/mo of standard deviation so of an absolute value of an off angle between the main surface of the group III nitride film and the (0001) plane, to mean value mo of the absolute value of the off angle thereof was 0.3 falling within a range of 0.005 or more and 0.6 or less.
    • Reference Example I-C>
  • As substrates for semiconductor devices, a group III nitride free-standing substrate (hereinafter also referred to as FS substrate), a group III nitride composite substrate (hereinafter also referred to as BP substrate) produced by the ion implantation method, and a group III nitride composite substrate (hereinafter also referred to as BS substrate) produced in accordance with Reference Embodiment I-4 of the present invention were prepared.
  • The FS substrate was prepared to have the diameter and the thickness shown in Table 5, by cutting a GaN crystal body having a predetermined diameter with a wire saw and polishing it.
  • The BP substrate was prepared to have the diameter and the thickness of its group III nitride film shown in Table 5. Specifically, as shown in FIG. 17 (B), hydrogen ions were implanted from the main surface of the GaN crystal body having a predetermined diameter, namely group III nitride film donor substrate 13D, to the position of a predetermined depth located inwardly from the main surface, to thereby form an ion implantation region 13 i. After this, as shown in FIG. 17 (C), support substrate 11 and the ion implantation region 13 i side of group III nitride film donor substrate 13D were bonded together with joint film 12 interposed therebetween. After this, as shown in FIG. 17 (D), annealing was done at 850° C. to separate group III nitride film donor substrate 13D along its ion implantation region 13 i. Here, a mullite substrate was used as support substrate 11.
  • The BS substrate was prepared to have the diameter and the thickness of its group III nitride film as shown in Table 5, in a similar manner to Reference Example I-B except that a mullite substrate was used as the support substrate.
  • Group III nitride composite substrates 1 and group III nitride semiconductor devices 4 were fabricated in a similar manner to Reference Example I-B, except that the above-described FS substrate, BP substrate, and BS substrate were used. In a similar manner to Reference Example I-A, the ratio st/mt of standard deviation st of the thickness of group III nitride film 13, to mean value mt of the thickness thereof, and the ratio so/mo of standard deviation so of an absolute value of an off angle between the main surface of the group III nitride film and the (0001) plane, to mean value mo of the absolute value of the off angle thereof were calculated for group III nitride composite substrate 1. The results are summarized in Table 5. The yield of group III nitride semiconductor devices 4 was also calculated in a similar manner to Reference Example I-A. The results are summarized in Table 5.
  • TABLE 5
    FS substrate BP substrate BS substrate
    Reference Example I-C
    I-C1 I-C2 I-C3 I-C4 I-C5 I-C6 I-C7 I-C8 I-C9 I-C10 I-C11 I-C12 I-C13 I-C14
    diameter (mm) 50 75 75 100 100 100 125 75 100 125 75 100 125 150
    thickness of 250 200 400 250 450 450 500 0.5 0.5 0.5 150 150 150 150
    group III nitride
    film (μm)
    warp (μm) 50 140 40 180 30 30 35 25 30 35 30 30 30 30
    ratio st/mt 0.16 0.16 0.16 0.16 0.16 0.25 0.16 0.16 0.16 0.16 0.16 0.16 0.16 0.16
    ratio so/mo 0.42 0.42 0.42 0.42 0.42 0.65 0.42 0.42 0.42 0.42 0.42 0.42 0.42 0.42
    device yield (%) 54 crack 55 crack 58 19 57 0 0 0 66 65 67 68
  • Referring to Table 5, as to the group III nitride semiconductor devices fabricated using FS substrates having a diameter of 50 mm to 125 mm and a thickness of 200 μm to 500 μm, those having a relatively large diameter and a relatively small thickness had a large warp and were likely to crack, and the yields of them were all less than 60%.
  • As to the group III nitride semiconductor devices fabricated using BP substrates having a diameter of 75 mm to 125 mm and a thickness of the group III nitride film of 0.5 μm, they did not exhibit excellent device characteristics due to the relatively small thickness of the group III nitride film, resulting in lower yields.
  • In contrast, the yields of the group III nitride semiconductor devices produced using BS substrates were higher, namely 65% or more.
    • Reference Example I-D
  • A plurality of group III nitride composite substrates were fabricated in a similar manner to Reference Example I-B, except that an Al2O3—SiO2 composite oxide substrate (with respect to the whole substrate, Al2O3 was 85% by mass and SiO2 was 15% by mass) was used as the support substrate. The warp and the TTV of the substrates were measured. The results are shown in Table 6. Here, the warp and the TTV of the group III nitride composite substrates were measured by means of an optical interferometric flatness tester.
  • These group III nitride composite substrates were used to fabricate group III nitride semiconductor devices in a similar manner to Reference Example I-B.
  • For the group III nitride composite substrates, the ratio st/mt of standard deviation st of the thickness of the group III nitride film, to mean value mt of the thickness thereof, and the ratio so/mo of standard deviation so of an absolute value of an off angle between the main surface of the group III nitride film and the (0001) plane, to mean value mo of the absolute value of the off angle thereof, as well as the warp and the TTV of the group III nitride composite substrates are shown in Table 6. The yield of group III nitride semiconductor devices 4 was also calculated in a similar manner to Reference Example I-A. The results are summarized in Table 6.
  • TABLE 6
    Reference Example I-D
    I-D1 I-D2 I-D3 I-D4 I-D5 I-D6 I-D7 I-D8 I-D9 I-D10 I-D11 I-D12 I-D13
    diameter
    100 100 100 100 100 100 100 100 75 150 150 150 150
    (mm)
    thickness of 110 110 110 110 110 110 110 110 130 120 120 120 120
    group III
    nitride
    film (μm)
    warp (μm) 15 30 50 70 30 30 50 50 50 50 50 50 90
    TTV (μm) 15 15 20 40 10 20 30 50 30 30 60 30 30
    ratio st/mt 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08
    ratio so/mo 0.36 0.36 0.36 0.36 0.36 0.36 0.36 0.36 0.36 0.36 0.36 0.36 0.36
    device 75 68 63 55 74 67 60 57 61 61 58 60 57
    yield (%)
  • Referring to Table 6, the group III nitride semiconductor devices manufactured with a high yield were those using group III nitride composite substrates having a warp of the main surface on the group III nitride film side of 50 μm or less and having a TTV of 30 μm or less.
    • Reference Example I-E
  • Group III nitride semiconductor devices were fabricated in a similar manner to Reference Example I-B, except that different types of group III nitride composite substrates were used that were different in ratio αIII-N/αS of thermal expansion coefficient αIII-N of the group III nitride film to thermal expansion coefficient αS of the support substrate, and ratio tIII-N/tS of thickness tIII-N of the group III nitride film to thickness tS of the support substrate. Here, in order to vary these ratios, mullite substrate, mullite-YSZ substrate, and Al2O3—SiO2 composite oxide substrate having different thicknesses were used as base substrates.
  • The ratio αIII-N/αS of thermal expansion coefficient αIII-N of the group III nitride film to thermal expansion coefficient αS of the support substrate, the ratio tIII-N/tS of thickness of the group III nitride film to thickness tS of the support substrate, and the yield of the group III nitride semiconductor devices are summarized in Table 7.
  • TABLE 7
    Reference Example I-E
    I-E1 I-E2 I-E3 I-E4 I-E5 I-E6 I-E7 I-E8 I-E9 I-E10 I-E11
    diameter (mm) 75 75 75 75 75 100 100 100 100 150 150
    type of support mullite mullite mullite mullite mullite mullite mullite- Al2O3—SiO2 Al2O3—SiO2 mullite mullite-
    substrate YSZ YSZ
    ratio αIII-N/αs 1.2 1.2 1.2 1.2 1.2 1.2 1 1.25 0.75 1.2 1
    ratio tIII-N/ts 0.02 0.1 0.25 0.6 1 0.3 0.3 0.3 0.3 0.2 0.2
    device yield (%) 62 65 70 66 64 71 75 65 62 68 72
  • Referring to Table 7, the group III nitride semiconductor devices manufactured with a high yield were those using group III nitride composite substrates having a ratio αIII-N/αS of thermal expansion coefficient of the group III nitride film to thermal expansion coefficient αs of the support substrate of 0.75 or more and 1.25 or less, and a ratio tIII-N/tS of thickness of the group III nitride film to thickness tS of the support substrate of 0.02 or more and 1 or less.
    • Reference Example I-F
  • Group III nitride composite substrates and group III nitride semiconductor devices were produced in a similar manner to Reference Example I-B, except that the cleaning conditions were tailored to adjust the amount of impurity metal atoms of the surface of the group III nitride film. The diameter of the group III nitride composite substrate, the amount of impurity metal atoms of the surface of the group III nitride film, and the yield of the group III nitride semiconductor devices are summarized in Table 8. Here, the amount of impurity metal atoms of the surface of the group III nitride film was measured by the TXRF (Total Reflection X-ray Fluorescence) method. Here, the measurements by the TXRF method were done by means of a tungsten (W) x-ray source under a condition that the angle of incidence was 0.05°.
  • TABLE 8
    Reference Example I-F
    I-F1 I-F2 I-F3 I-F4 I-F5 I-F6 I-F7
    diameter 75 75 75 75 100 100 150
    impurity metal atoms 6 40 300 500 8 80 10
    (×1010 atoms/cm2)
    device yield (%) 70 68 63 58 69 65 69
  • Referring to Table 8, group III nitride semiconductor devices manufactured with a high yield were those using group III nitride composite substrates having impurity metal atoms of the main surface of the group III nitride film of 3×1012 atoms/cm2 or less.
    • Reference Example I-G
  • Group III nitride composite substrates and group III nitride semiconductor devices were fabricated in a similar manner to Reference Example I-B, except that a mullite substrate was used as the support substrate and, as the group III nitride film donor substrate, a uniform GaN crystal body without dislocation concentrated region that had O and Si added as dopants and had a dislocation density of 4×106 cm−2 and a carrier concentration of 2×1018 cm−3 was used. Here, the polishing conditions were tailored to adjust the maximum RMS of respective main surfaces of the group III nitride film and the support substrate.
  • As to the group III nitride composite substrates, the maximum RMS of the main surface of the group III nitride film and the maximum RMS of the main surface of the support substrate, as well as the yield of the group III nitride semiconductor devices are summarized in Table 9.
  • TABLE 9
    Reference Example I-G
    I- I- I- I- I- I- I- I- I-
    G1 G2 G3 G4 G5 G6 G7 G8 G9
    maximum RMS of main 0.5 1 3 5 1 1 1 1 3
    surface of group III
    nitride film (nm)
    maximum RMS of main 1 1 1 1 2 6 12 18 12
    surface of support
    substrate (nm)
    device yield (%) 68 64 58 52 65 63 57 53 55
  • Referring to Table 9, group III nitride semiconductor devices manufactured with a high yield were those using group III nitride composite substrates having an RMS of the main surface of the group III nitride film of 3 nm or less and an RMS of the main surface of the support substrate of 12 nm or less.
    • Reference Example I-H
  • Group III nitride composite substrates were fabricated in a similar manner to Reference Example I-B, except that an Al2O3—SiO2 composite oxide substrate (with respect to the whole substrate, Al2O3 was 82% by mass and SiO2 was 18% by mass) was used as the support substrate and, as the group III nitride film donor substrate, a semi-insulating GaN crystal body having Fe added as a dopant and a specific resistance of 1×107 Ωcm was used. Here, the polishing conditions were tailored to adjust mean value mIII-N and standard deviation of the RMS of the main surface of the group III nitride film in the group III nitride composite substrate as well as mean value mS and standard deviation sS of the RMS of the main surface of the support substrate.
  • Further, referring to FIG. 10, an HEMT was fabricated as group III nitride semiconductor device 4 in the following manner.
  • On group III nitride film 13 of group III nitride composite substrate 1, GaN layer 26 having a thickness of 1.5 μm and Al0.2Ga0.8N layer 27 having a thickness of 30 nm were successively epitaxially grown by the MOVPE method to form group III nitride layer 20, to thereby produce laminated group III nitride composite substrate 2.
  • Next, on Al0.2Ga0.8N layer 27, a source electrode 60 and a drain electrode 70 were fabricated by photolithography, EB deposition, and lift-off. In these electrodes, a Ti layer having a thickness of 20 nm, an Al layer having a thickness of 100 nm, a Ti layer having a thickness of 20 nm, and an Au layer having a thickness of 300 nm were successively formed, lifted off, and annealed for 1 minute at 600° C. into an alloy.
  • Next, in a similar step to the step of fabricating source electrode 60 and drain electrode 70, a gate electrode 80 was fabricated. For fabrication of gate electrode 80, an Ni layer having a thickness of 50 nm and an Au layer having a thickness of 500 nm were successively formed. The gate length was set to 2 μm.
  • In the HEMT which was group III nitride semiconductor device 4 obtained in this way, GaN layer 26 and Al0.2Ga0.8N layer 27 were formed as at least one group III nitride layer 20 on group III nitride film 13 of group III nitride composite substrate 1, and source electrode 60, drain electrode 70, and gate electrode 80 were disposed on Al0.2Ga0.8N layer 27 so that the electrodes were separated from each other and gate electrode 80 was located between source electrode 60 and drain electrode 70.
  • The leakage gate current density of the obtained HEMT was inspected. Specifically, the produced devices were classified into non-defective devices meeting a standard that the leakage gate current density was 1×10−6 A/cm2 or less when being applied with a gate voltage of 5 V, and defective devices failing to meet this standard, and the percentage of the ratio determined by dividing the non-defective devices by the sum of the non-defective devices and the defective devices was defined as a yield.
  • Mean value mIII-N and standard deviation sIII-N of the RMS of the main surface of the group III nitride film in the group III nitride composite substrate, mean value mS and standard deviation sS of the RMS of the main surface of the support substrate, and the yield of group III nitride semiconductor devices are summarized in Table 10.
  • TABLE 10
    Reference Example I-H I-H1 I-H2 I-H3 I-H4 I-H5 I-H6 I-H7 I-H8 I-H9 I-H10 I-H11 I-H12
    mean value mIII-N of RMS 0.1 0.5 1 2 3 2 2 2 2 2 2 2
    of main surface of group
    III nitride film (nm)
    standard deviation sIII-N of 0.03 0.1 0.2 0.4 0.4 0.5 0.4 0.4 0.4 0.4 0.4 0.4
    RMS of main surface of
    group III nitride film (nm)
    mean value ms of RMS of 2 2 2 2 2 2 0.3 2 5 10 13 10
    main surface of support
    substrate (nm)
    standard deviation ss of 0.2 0.2 0.2 0.2 0.2 0.2 0.1 0.4 1.4 3 3 4
    RMS of main surface of
    support substrate (nm)
    device yield (%) 72 69 65 60 51 52 68 67 64 57 51 52
  • Referring to Table 10, group III nitride semiconductor devices manufactured with a high yield were those using a group III nitride composite substrate in which the main surface of the group III nitride film had a mean value mIII-N of the RMS of 0.1 nm or more and 2 nm or less and a standard deviation sIII-N of the RMS of 0.4 nm or less, and the main surface of the support substrate had a mean value mS of the RMS of 0.3 nm or more and 10 nm or less and a standard deviation sS of the RMS of 3 nm or less.
    • Reference Example I-I 1. Fabrication of Group III Nitride Composite Substrate
  • Referring to FIG. 14 (A) to (C), joined substrate 1L was produced in a similar manner to Reference Example I-A, except that: an Al2O3—SiO2 composite oxide substrate (with respect to the whole substrate, Al2O3 was 88% by mass and SiO2 was 12% by mass) having a diameter of 100 mm was prepared for use as support substrate 11; a GaN crystal substrate having a diameter of 100 mm and a thickness of 400 μm was prepared for use as group III nitride film donor substrate 13D; on respective main surfaces of support substrate 11 and group III nitride film donor substrate 13D, an SiO2 film was grown to a thickness of 500 nm by the PE-CVD method, and thereafter CMP was performed using a slurry having a pH of 9 and containing colloidal silica having an average grain size of 20 nm, to thereby form joint films 12 a, 12 b having a thickness of 250 nm and having a main surface planarized to have an RMS roughness of 0.15 nm or less; and scrub cleaning was performed with pure water and a sponge made of PVA (polyvinyl alcohol), as the cleaning with pure water.
  • Referring to FIG. 14 (D), grinding and polishing were performed on the main surface of group III nitride film donor substrate 13D in joined substrate 1L that was opposite to the bonded main surface thereof. For grinding, a vitrified grinding wheel containing diamond abrasive grains having an average grain size of 25 μm to 35 μm was used. For polishing, mechanical polishing was performed in a stepwise manner using slurries containing diamond abrasive grains having an average grain size of 3 μm, 2 μm, and 0.25 μm, respectively. This polishing was performed, in order to reduce the thickness variation and the off-angle variation, in such a manner that the warp of the substrate was corrected in advance by mechanical pressurization and the substrate in this state was bonded to a holding plate. After polishing, dry etching was performed by means of chlorine gas plasma which was generated by the ICP-RIE (Inductively Coupled Plasma Reactive Ion Etching) method. It should be noted, Reference Example I-18 used, instead of the above-described grinding, rough polishing performed by means of diamond abrasive grains having an average grain size of 9 μm. In this way, group III nitride composite substrate 1 including group III nitride film 13 having a thickness of 150 μm was obtained.
    • 2. Fabrication of Group III Nitride Semiconductor Device
  • Referring to FIG. 15, group III nitride semiconductor device 4 was produced in a similar manner to Reference Example I-A, except that: group III nitride composite substrate 1 of the present Reference Example was used; support substrate 11 and joint film 12 were removed from laminated substrate 3 by grinding with a vitrified grinding wheel containing diamond abrasive grains having an average grain size of 35 μm to 45 μm, except that, for Reference Example I-19, they were removed by polishing with diamond abrasive grains having an average grain size of 15 μm; in order to remove residue of the joint film and the support substrate after the grinding and/or the polishing, etching cleaning was performed with hydrofluoric acid.
  • In a similar manner to Reference Example I-A, the ratio st/mt of standard deviation st of the thickness of group III nitride film 13, to mean value mt of the thickness thereof, and the ratio so/mo of standard deviation so of an absolute value of an off angle between the main surface of the group III nitride film and the (0001) plane, to mean value mo of the absolute value of the off angle thereof were calculated for group III nitride composite substrate 1. The results are summarized in Table 11. The yield of group III nitride semiconductor devices 4 was also calculated in a similar manner to Reference Example I-A. The results are summarized in Table 11.
  • TABLE 11
    Reference Example I-I I-I1 I-I2 I-I3 I-I4 I-I5 I-I6 I-I7 I-I8 I-I9
    ratio st/mt 0.001 0.002 0.05 0.15 0.2 0.25 0.2 0.05 0.05
    ratio so/mo 0.005 0.008 0.2 0.5 0.6 0.6 0.7 0.2 0.2
    device yield (%) 76 76 72 61 56 34 31 71 73
  • Referring to Table 11, group III nitride semiconductor devices manufactured with a high yield were those using a group III nitride composite substrate including a group III nitride film where the ratio st/mt of standard deviation st of the thickness of the group III nitride film, to mean value mt of the thickness thereof was 0.001 or more and 0.2 or less, and the ratio so/mo of standard deviation so of an absolute value of an off angle between the main surface of the group III nitride film and the (0001) plane, to mean value mo of the absolute value of the off angle thereof was 0.005 or more and 0.6 or less. It should be noted that, as to Example I-H, sophisticated control was necessary for the grinding and polishing in order to reduce the thickness variation and the off-angle variation, and thus the grinding and polishing took a long time.
  • Reference Example II-A to Reference Example II-H according to Reference Invention II will be illustrated below.
    • Reference Example II-A 1. Fabrication of Group III Nitride Composite Substrate
  • Referring to FIG. 12 (A), an Al2O3—SiO2 composite oxide substrate (with respect to the whole substrate, Al2O3 was 85% by mass and SiO2 was 15% by mass) having a diameter of 75 mm and a thickness of 300 μm was prepared for use as support substrate 11. Support substrate 11 had a thermal conductivity of 10 W·m−1·K−1 and a Young's modulus of 250 GPa. Main surfaces 11 m, 11 n of the two opposite sides respectively of support substrate 11 were subjected to rough polishing with a copper-based surface plate, intermediate polishing with a tin surface plate, and finish polishing with a nonwoven polishing pad in which grating grooves were formed, for which a diamond slurry was used as an abrasive. The finish polishing was performed under the condition that action coefficient FE was 4×10−17 m2/s or more and 1×10−16 m2/s or less.
  • Next, on finish-polished main surface 11 m of support substrate 11, an SiO2 film of 800 nm in thickness was grown by the PE-CVD (Plasma Enhanced-Chemical Vapor Deposition) method, annealed in a nitrogen atmosphere at 800° C. for an hour, and thereafter subjected to CMP (Chemical Mechanical Polishing) using a slurry with a pH of 10 containing colloidal silica abrasive grains having an average grain size of 40 nm, to thereby form joint film 12 a of 400 nm in thickness having its main surface 12 am mirror-finished so that the RMS (root mean square roughness) was 0.3 nm or less. Subsequently, in order to remove the colloidal silica abrasive grains used for the CMP, non-abrasive polishing cleaning with a KOH aqueous solution, polishing cleaning with pure water, and megasonic cleaning (cleaning with ultrasonic waves in a megasonic frequency range of 500 kHz to 5 MHz) with pure water were performed.
  • Referring also to FIG. 12 (B), a GaN crystal body having a diameter of 75 mm and a thickness of 8 mm was prepared for use as group III nitride film donor substrate 13D. A surface-to-be-bonded of group III nitride film donor substrate 13D was subjected to mechanical polishing and CMP so that it was planarized to have an RMS of 2 nm or less. After this, an SiO2 film of 800 nm in thickness was grown on this substrate by the PE-CVD method, annealed in a nitrogen atmosphere at 800° C. for an hour, and thereafter subjected to CMP using a slurry with a pH of 10 containing colloidal silica abrasive grains having an average grain size of 40 nm, to thereby form joint film 12 b of 500 nm in thickness having its main surface 12 bn mirror-finished so that the RMS was 0.3 nm or less. Subsequently, in order to remove the colloidal silica abrasive grains used for the CMP, non-abrasive polishing cleaning with a KOH aqueous solution, polishing cleaning with pure water, and megasonic cleaning (cleaning with ultrasonic waves in a megasonic frequency range of 500 kHz to 5 MHz) with pure water were performed. Here, group III nitride film donor substrate 13D was produced through growth by the HVPE method using a GaAs substrate as a base substrate. Group III nitride film donor substrate 13D had its electrical conductivity of n-type, its dislocation density of 1×108 cm−2, and its carrier concentration of 1×1017.
  • Referring next to FIG. 12 (C), main surface 12 am of joint film 12 a and main surface 12 bn of joint film 12 b were bonded together to thereby produce joined substrate 1L in which support substrate 11 and group III nitride film 13 were bonded to each other with joint film 12 interposed therebetween. After they were bonded together, joined substrate 1L was annealed by being heated in a nitrogen gas atmosphere to 800° C., to thereby increase the joint strength.
  • Referring next to FIG. 12 (D), group III nitride film donor substrate 13D in joined substrate 1L was cut, with a wire saw, along a plane located inwardly at a depth of 150 μm from the bonded surface where group III nitride film donor substrate 13D was bonded to joint film 12, to thereby produce group III nitride composite substrate 1 in which support substrate 11 and the GaN film which was group III nitride film 13 were bonded together with joint film 12 interposed therebetween. As the wire, a fixed-abrasive wire with a diameter of 180 μm on which diamond abrasive grains were electrodeposited was used. As for the cutting method, in order to reduce the cut resistance and enhance the thickness precision and the flatness, the method was used that caused the wire to swing and caused group III nitride film donor substrate 13D to vibrate in synchronization therewith. The resistance coefficient for cutting with the wire saw was set to 4200 N. After cutting, group III nitride film 13 of group III nitride composite substrate 1 was subjected to mechanical polishing and CMP. In order to have a uniform thickness of group III nitride film 13, the composite substrate was mounted on a CMP apparatus in the following way. The shape of the substrate was corrected in advance by vacuum chuck suction, and thereafter the composite substrate was suction-fixed onto the apparatus.
  • Next, Group III-nitride-film 13-side main surface 13 m of group III nitride composite substrate 1 thus obtained was subjected to rough polishing with a copper-based surface plate and intermediate polishing with a tin surface plate, using a diamond slurry as an abrasive, and further subjected to finish polishing with a nonwoven polishing pad using, as an abrasive, a slurry with a pH of 11 containing colloidal silica abrasive grains. The finish polishing was performed under the condition that action coefficient FE was 6×10−14 m2/s. After the finish polishing, group III nitride film 13 had a thickness of 110 μm.
  • For group III nitride composite substrate 1 after this finish polishing, mean value mS of the RMS of support-substrate 11-side main surface 11 n, and the ratio sS/mS of standard deviation sS of the RMS to mean value mS of the RMS of support-substrate 11-side main surface 11 n are summarized in Table 12.
  • Here, mean value mS of the RMS and the ratio sS/mS of standard deviation sS of the RMS to mean value mS of the RMS were calculated from the RMS of support-substrate 11-side main surface 11 n at the 13 measurement points P on support-substrate 11-side main surface 11 n shown in FIG. 7, constituted of: one central point PC; four outer points PO located respectively in the four directions with respect to central point PC that are orthogonal to each other, the outer points each being located at 5 mm inward from the outer edge of the substrate; and eight middle points PM including four middle points each between the one central point PC and one of the four outer points PO and four middle points each between two of the four outer points PO.
    • 2. Fabrication of Group III Nitride Semiconductor Device
  • Referring to FIG. 15 (A), on group III-nitride-film 13-side main surface 13 m of group III nitride composite substrate 1, group III nitride layer 20 was formed by the MOVPE method. Specifically, on group III nitride film 13, n-GaN layer 21 having a thickness of 5 μm, n-In0.05Ga0.95N layer 22 having a thickness of 50 nm, active layer 23 having a multiple quantum well structure of three cycles constituted of an In0.14Ga0.86N well layer having a thickness of 3 nm and a GaN barrier layer having a thickness of 15 nm, p-Al0.09Ga0.91N layer 24 having a thickness of 20 nm, and p-GaN layer 25 having a thickness of 150 nm were successively epitaxially grown to thereby produce laminated group III nitride composite substrate 2. After this, it was annealed by an RTA (Rapid Thermal Annealing) apparatus and accordingly activated.
  • Referring to FIG. 15 (B), on p-GaN layer 25, which was the topmost layer in group III nitride layer 20 of laminated group III nitride composite substrate 2, an Ni layer having a thickness of 4 nm and an Au layer having a thickness of 200 nm were successively formed by the EB (Electron Beam) deposition method, and annealed into an alloy, to thereby form first electrode 30. On first electrode 30, a Ti layer having a thickness of 200 nm, a Pt layer having a thickness of 100 nm, and an Au layer having a thickness of 1000 nm were successively formed by the EB deposition method to thereby form pad electrode 33.
  • A CuW substrate was prepared for use as device support substrate 40. On device support substrate 40, a Ti layer having a thickness of 200 nm, a Pt layer having a thickness of 100 nm, and an Au layer having a thickness of 1000 nm were successively formed by the EB deposition method to thereby form pad electrode 43. On pad electrode 43, an AuSn solder film was formed as joint metal film 44.
  • Subsequently, joint metal film 44 was bonded to pad electrode 33 to thereby produce laminated substrate 3.
  • Referring to FIG. 15 (C), from laminated substrate 3, support substrate 11 and joint film 12 in group III nitride composite substrate 1 were etched away by means of hydrofluoric acid.
  • Referring to FIG. 15 (D), on group III nitride film 13 having been exposed by removal of support substrate 11 and joint film 12 from laminated substrate 3, a Ti layer having a thickness of 20 nm, an Al layer having a thickness of 200 nm, and an Au layer having a thickness of 300 nm were successively formed by the EB deposition method, and then annealed to form second electrode 50. On device support substrate 40, a Ti layer having a thickness of 20 nm and an Au layer having a thickness of 300 nm were successively formed by the EB deposition method, and annealed to thereby form device support substrate electrode 45. In this way, group III nitride semiconductor device 4 was obtained.
  • For group III nitride semiconductor device 4 thus obtained, its optical output was measured by means of an integrating sphere under the condition that injected current was 4 A. The optical output of the light-emitting device was measured in the following way. Specifically, into the light-emitting device mounted in the integrating sphere, predetermined current was injected, and the optical output was measured by a detector receiving the light collected from the light-emitting device. The resultant group III nitride semiconductor devices were classified into non-defective devices meeting a standard that the optical output was 2 W or more and defective devices failing to meet this standard, and the percentage of the ratio determined by dividing the non-defective devices by the sum of the non-defective devices and the defective devices was defined as a yield. The yield of the group III nitride semiconductor devices is summarized in Table 12.
  • TABLE 12
    Reference Example II-A II-A1 II-A2 II-A3 II-A4 II-A5 II-A6 II-A7 II-A8 II-A9 II-A10 II-A11 II-A12 II-A13
    ms (nm) 0.3 0.5 1 2 5 10 20 0.3 20 30 35 20 10
    ratio ss/ms 0.005 0.01 0.05 0.1 0.2 0.3 0.4 0.4 0.005 0.4 0.005 0.5 0.65
    device yield (%) 77 77 73 71 67 63 56 63 58 31 32 35 37
  • Referring to Table 12, group III nitride semiconductor devices manufactured with a high yield were those fabricated using a group III nitride composite substrate with a diameter of 75 mm (this value meets 75 mm or more) including a support substrate and a group III nitride film with a thickness of 110 μm (this value meets 10 μm or more and 250 μm or less), where mean value mS of the RMS of the support-substrate-side main surface was 0.3 nm or more and 20 nm or less, and ratio sS/mS of standard deviation sS of the RMS to mean value mS of the RMS of the support-substrate-side main surface was 0.005 or more and 0.4 or less.
    • Reference Example II-B
  • Referring to FIGS. 12 and 15, group III nitride composite substrate 1 and group III nitride semiconductor device 4 were produced in a similar manner to Reference Example II-A, except that: a mullite-YSZ substrate (with respect to the whole substrate, mullite was 70% by mass and YSZ was 30% by mass, with respect to mullite, Al2O3 was 60% by mole and SiO2 was 40% by mole and, with respect to YSZ, ZrO2 was 90% by mole and Y2O3 was 10% by mole) was used as support substrate 11; different diameters in a range of 75 mm to 150 mm were used and support-substrate 11-side main surface 11 n was finish-polished under the condition that action coefficient FE was 6.2×10−17 m2/s; and group III nitride composite substrates 1 were fabricated in which respective group III nitride films 13 after finish-polished had different thicknesses in a range of 10 μm to 250 μm. Support substrate 11 had a thermal conductivity of 30 W·m−1·K−1 and a Young's modulus of 150 GPa.
  • In a similar manner to Reference Example II-A, for group III nitride composite substrate 1, mean value mS of the RMS of support-substrate 11-side main surface 11 n and the ratio sS/mS of standard deviation sS of the RMS to mean value mS of the RMS of support-substrate 11-side main surface 11 n were calculated and summarized in Table 13. In a similar manner to Reference Example II-A, the yield of group III nitride semiconductor devices 4 was also calculated and summarized in Table 13.
  • TABLE 13
    Reference Example II-B II-B1 II-B2 II-B3 II-B4 II-B5 II-B6 II-B7 II-B8 II-B9 II-B10 II-B11 II-B12
    diameter D (mm) 75 75 75 75 75 100 100 100 100 125 150 150
    thickness of 10 30 100 200 250 10 110 180 250 120 130 250
    group III nitride
    film (μm)
    ms (nm) 6 6 6 6 6 6 6 6 6 6 6 6
    ratio ss/ms 0.23 0.23 0.23 0.23 0.23 0.23 0.23 0.23 0.23 0.23 0.23 0.23
    device yield (%) 58 62 69 72 65 59 74 73 66 75 74 62
  • Referring to Table 13, group III nitride semiconductor devices manufactured with a high yield were those fabricated using a group III nitride composite substrate with a diameter of 75 mm to 150 mm including a group III nitride film with a thickness of 10 μm to 250 μm, where mean value mS of the RMS of the support-substrate-side main surface was 6 nm (this value meets 0.3 nm or more and 20 nm or less), and the ratio sS/mS of standard deviation sS of the RMS to mean value mS of the RMS of the support-substrate-side main surface was 0.23 (this value meets 0.005 or more and 0.4 or less).
    • Reference Example II-C
  • As substrates for semiconductor devices, a group III nitride free-standing substrate (hereinafter also referred to as FS substrate), a group III nitride composite substrate (hereinafter also referred to as BP substrate) produced by the ion implantation method, and a group III nitride composite substrate (hereinafter also referred to as BS substrate) produced in accordance with Reference Embodiment II-4 of Reference Invention II were prepared.
  • The FS substrate was prepared to have the diameter and the thickness shown in Table 4, by cutting a GaN crystal body having a predetermined diameter with a wire saw and polishing it.
  • The BP substrate was prepared to have the diameter and the thickness of its group III nitride film shown in Table 14. Specifically, as shown in FIG. 17 (B), hydrogen ions were implanted from main surface 13 n of the GaN crystal body having a predetermined diameter, namely group III nitride film donor substrate 13D, to the position of a predetermined depth located inwardly from the main surface, to thereby form an ion implantation region 13 i. After this, as shown in FIG. 17 (C), support substrate 11 and the ion implantation region 13 i side of group III nitride film donor substrate 13D were bonded together with joint film 12 interposed therebetween. After this, as shown in FIG. 17 (D), annealing was done at 700° C. to separate group III nitride film donor substrate 13D along its ion implantation region 13 i. Here, an Al2O3—SiO2 composite oxide substrate (with respect to the whole substrate, Al2O3 was 85% by mass and SiO2 was 15% by mass) was used as support substrate 11.
  • The BS substrate was prepared to have the diameter and the thickness of its group III nitride film as shown in Table 14, in a similar manner to Reference Example II-B except that an Al2O3—SiO2 composite oxide substrate (with respect to the whole substrate, Al2O3 was 85% by mass and SiO2 was 15% by mass) was used as the support substrate.
  • Group III nitride composite substrates 1 and group III nitride semiconductor devices 4 were fabricated in a similar manner to Reference Example II-B, except that the above-described FS substrate, BP substrate, and BS substrate were used, finish polishing of support-substrate 11-side main surface 11 n was performed under the condition that action coefficient FE was 4.0×10−17 m2/s.
  • In a similar manner to Reference Example II-A, for the BP substrate and the BS substrate each serving as group III nitride composite substrate 1, warp W, ratio W/D, mean value mS of the RMS of support-substrate 11-side main surface 11 n, and the ratio sS/mS of standard deviation sS of the RMS to mean value mS of the RMS of support-substrate 11-side main surface 11 n were calculated and summarized in Table 14. For the FS substrate as well, warp W, ratio W/D, mean value mS of the RMS of the rear-side main surface, and the ratio sS/mS of standard deviation sS of the RMS to mean value mS of the RMS of rear-side main surface were calculated and summarized in Table 14. Further, in a similar manner to Reference Example II-A, the yield of group III nitride semiconductor devices 4 was calculated and summarized in Table 14.
  • TABLE 14
    FS substrate BP substrate BS substrate
    Reference Example II-C
    II-C1 II-C2 II-C3 II-C4 II-C5 II-C6 II-C7 II-C8 II-C9 II-C10 II-C11 II-C12 II-C13 II-C14
    diameter D (mm) 50 75 75 100 100 100 125 75 100 125 75 100 125 150
    thickness of group 280 250 380 250 450 450 500 0.5 0.5 0.5 140 140 140 140
    III nitride film
    (μm)
    warp W (μm) 40 120 42 170 25 25 40 20 25 30 25 25 40 45
    ratio W/D (×10−4) 8 16 5.6 17 2.5 2.5 3.2 2.7 2.5 2.4 3.3 2.5 3.2 3
    ms (nm) 4 4 4 4 4 30 4 4 4 4 4 4 4 4
    ratio ss/ms 0.15 0.15 0.15 0.15 0.15 0.5 0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.15
    device yield (%) 52 crack 54 crack 56 18 52 0 0 0 72 73 70 69
  • Referring to Table 14, as to group III nitride semiconductor devices fabricated using FS substrates with a diameter of 50 mm to 125 mm and a thickness of 250 μm to 500 μm, the group III nitride semiconductor devices with a relatively large diameter and a relatively small thickness had a large warp and were likely to crack, and the yields of them were all less than 60%.
  • Regarding group III nitride semiconductor devices fabricated using BP substrates with a diameter of 75 mm to 125 mm and a thickness of 0.5 μm of the group III nitride film, the devices did not exhibit excellent device characteristics due to the relatively small thickness of the group III nitride film, resulting in lower yields.
  • In contrast, the yields of the group III nitride semiconductor devices fabricated using BS substrates were higher, namely 69% or more. The BS substrate has a larger thickness of the group III nitride film to allow electric current to be sufficiently distributed, as compared with the BP substrate. In contrast to the BP substrate, the BS substrate has no deterioration, due to ion implantation, of the crystal quality of the group III nitride film. Therefore, the semiconductor devices fabricated using the BS substrate exhibited excellent characteristics.
    • Reference Example II-D
  • Referring to FIGS. 12 and 15, group III nitride composite substrate 1 and group III nitride semiconductor device 4 were fabricated in a similar manner to Reference Example II-A, except that: an Al2O3—SiO2 composite oxide substrate (with respect to the whole substrate, Al2O3 was 82% by mass and SiO2 was 18% by mass) was used as support substrate 11; different diameters in a range of 75 mm to 150 mm were used, an SiO2 film serving as joint film 12 was grown by the AP-CVD (Atmospheric Pressure-Chemical Vapor Deposition) method, and support-substrate 11-side main surface 11 n was subjected to finish polishing under the condition that action coefficient FE was 8.5×10−17 m2/s; and respective finish-polished group III nitride films 13 had different thicknesses in a range of 110 μm to 130 μm in produced group III nitride composite substrates 1. Support substrate 11 had a thermal conductivity of 5 W·m−1·K−1 and a Young's modulus of 230 GPa.
  • In a similar manner to Reference Example II-A, for group III nitride composite substrate 1, mean value mS of the RMS of support-substrate 11-side main surface 11 n, the ratio sS/mS of standard deviation sS of the RMS to mean value mS of the RMS of support-substrate 11-side main surface 11 n, warp W of support-substrate 11-side main surface 11 n, and the ratio W/D of warp W of support-substrate 11-side main surface 11 n to diameter D were calculated and summarized in Table 15. In a similar manner to Reference Example II-A, the yield of group III nitride semiconductor devices 4 was also calculated and summarized in Table 15.
  • TABLE 15
    Reference Example II-D
    II- II- II- II- II- II- II- II- II- II- II- II- II- II- II- II
    D1 D2 D3 D4 D5 D6 D7 D8 D9 D10 D11 D12 D13 D14 D15 -D16
    diameter D (mm) 100 100 100 100 100 100 100 100 100 100 75 150 150 150 150 150
    thickness of 110 110 110 110 110 110 110 110 110 110 130 120 120 120 120 120
    group III nitride
    film (μm)
    ratio W/D −10 −7 −4 −2.5 −1 1.5 3 5 8 10 2 −11 −7 −2.5 8 10
    (×10−4)
    ms (nm) 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3
    ratio ss/ms 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1
    device yield (%) 63 70 72 74 75 76 73 72 69 64 74 58 66 72 65 59
  • Referring to Table 15, group III nitride semiconductor devices manufactured with a high yield were those fabricated using a group III nitride composite substrate with a diameter of 75 mm to 150 mm (this value meets 75 mm or more) including a group III nitride film with a thickness of 110 μm to 130 μm (this value meets 10 μm or more and 250 μm or less), where mean value mS of the RMS of the support-substrate-side main surface was 3 nm (this value meets 0.3 nm or more and 20 nm or less), the ratio sS/mS of standard deviation sS of the RMS to mean value mS of the RMS of the support-substrate-side main surface was 0.1 (this value meets 0.005 or more and 0.4 or less), and the ratio W/D of warp W of support-substrate 11-side main surface 11 n to diameter D was −7×10−4 or more and 8×10−4 or less.
    • Reference Example II-E
  • Referring to FIGS. 12 and 15, group III nitride composite substrate 1 and group III nitride semiconductor device 4 were produced in a similar manner to Reference Example II-A, except that: a mullite substrate (with respect to the whole mullite substrate, Al2O3 was 60% by mole and SiO2 was 40% by mole) was used as support substrate 11; a GaN substrate with high electrical conductivity doped with O (oxygen) atoms and Si (silicon) atoms, having no dislocation concentrated region, having a constant dislocation density of 5×106 cm−2, and a carrier concentration of 2×1018 cm−3 was used as group III nitride film donor substrate 13D; support-substrate 11-side main surface 11 n was subjected to finish polishing under the condition that action coefficient FE was 8.3×10−17 m2/s; group III nitride film donor substrate 13D was cut by electrical discharge wire cutting; and group III-nitride-film 13-side main surface 13 m was subjected to finish polishing with a slurry containing colloidal silica with a grain size of 20 nm to 400 nm under the condition that action coefficient FE was 4×10−14 or more and 1×10−13 or less. Support substrate 11 had a thermal conductivity of 3 W·m−1·K−1 and a Young's modulus of 200 GPa.
  • In a similar manner to Reference Example II-A, for finish-polished group III nitride composite substrate 1, mean value mS of the RMS of support-substrate 11-side main surface 11 n, and the ratio sS/mS of standard deviation sS of the RMS to mean value mS of the RMS of support-substrate 11-side main surface 11 n were calculated and summarized in Table 16.
  • Further, for finish-polished group III nitride composite substrate 1, mean value mIII-N of the RMS of group III-nitride-film 13-side main surface 13 m, and the ratio sIII-N/mIII-N of standard deviation sIII-N of the RMS to mean value of the RMS of group III-nitride-film 13-side main surface 13 m are summarized in Table 16. Here, mean value mIII-N of the RMS and the ratio sIII-N/mIII-N of standard deviation of the RMS to mean value of the RMS were calculated from the RMS of group III-nitride-film 13-side main surface 13 m at 13 measurement points P on group III-nitride-film 13-side main surface 13 m shown in FIG. 7 constituted of: one central point PC; four outer points PO located respectively in the four directions with respect to central point PC that are orthogonal to each other, the outer points each being located at 5 mm inward from the outer edge; and eight middle points PM including four middle points each between the one central point PC and one of the four outer points PO and four middle points each between two of the four outer points PO.
  • Further, in a similar manner to Reference Example II-A, the yield of group III nitride semiconductor devices 4 was calculated and summarized in Table 16.
  • TABLE 16
    Reference Example II-E II-E1 II-E2 II-E3 II-E4 II-E5 II-E6 II-E7 II-E8 II-E9 II-E10 II-E11 II-E12 II-E13
    mIII-N (nm) 0.15 0.4 0.8 1 1.6 2 3 0.15 3 4 4.5 3 2.5
    ratio 0.008 0.02 0.05 0.1 0.2 0.4 0.5 0.5 0.008 0.5 0.008 0.7 0.8
    sIII-N/mIII-N
    ms (nm) 2 2 2 2 2 2 2 2 2 2 2 2 2
    ratio ss/ms 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12
    device yield (%) 80 80 75 72 68 63 59 62 60 52 51 53 54
  • Referring to Table 16, group III nitride semiconductor devices manufactured with a high yield were those fabricated using a group III nitride composite substrate with a diameter of 75 mm (this value meets 75 mm or more) including a group III nitride film with a thickness of 110 μm (this value meets 10 μm or more and 250 μm or less), where mean value mS of the RMS of the support-substrate-side main surface was 2 nm (this value meets 0.3 nm or more and 20 nm or less), the ratio sS/mS of standard deviation sS of the RMS to mean value mS of the RMS of the support-substrate-side main surface was 0.12 (this value meets 0.005 or more and 0.4 or less), mean value mIII-N of the RMS of the group III-nitride-film-side main surface was 0.15 nm or more and 3 nm or less, and the ratio sIII-N/mIII-N of standard deviation of the RMS to mean value mIII-N of the RMS of the group III-nitride-film-side main surface was 0.008 or more and 0.5 or less.
    • Reference Example II-F 1. Fabrication of Group III Nitride Composite Substrate
  • Referring to FIG. 12, group III nitride composite substrates 1 were fabricated in a similar manner to Reference Example II-A, except that: an Al2O3—SiO2 composite oxide substrate, a mullite substrate (with respect to the whole substrate, Al2O3 was 60% by mole and SiO2 was 40% by mole), and a mullite-YSZ substrate (with respect to the whole substrate, mullite was 70% by mass and YSZ was 30% by mass, with respect to mullite, Al2O3 was 60% by mole and SiO2 was 40% by mole and, with respect to YSZ, ZrO2 was 90% by mole and Y2O3 was 10% by mole) were each used as support substrate 11; a semi-insulating GaN substrate doped with Fe (iron) atoms and having an electrical resistance (also referred to as specific resistance) of 2×105 Ωcm was used as group III nitride film donor substrate 13D, the group III nitride film donor substrate was cut with a wire saw using loose abrasive grains; support-substrate 11-side main surface 11 n was subjected to finish polishing under the condition that action coefficient FE was 8.7×10−17 m2/s; and the group III nitride composite substrates were fabricated with different diameters in a range of 75 mm to 150 mm.
    • 2. Fabrication of Group III Nitride Semiconductor Device
  • Referring to FIG. 10, in the present reference example, an HEMT was fabricated as group III nitride semiconductor device 4. On main surface 13 m of group III nitride film 13 of group III nitride composite substrate 1, GaN layer 26 having a thickness of 1.5 μm and Al0.2Ga0.8N layer 27 having a thickness of 30 nm were successively epitaxially grown by the MOVPE method to form group III nitride layer 20, to thereby produce laminated group III nitride composite substrate 2.
  • Next, on Al0.2Ga0.8N layer 27, a source electrode 60 and a drain electrode 70 were fabricated by photolithography, EB deposition, and lift-off. In these electrodes, a Ti layer having a thickness of 20 nm, an Al layer having a thickness of 100 nm, a Ti layer having a thickness of 20 nm, and an Au layer having a thickness of 300 nm were successively formed, lifted off, and annealed for 1 minute at 600° C. into an alloy.
  • Next, in a similar step to the step of forming source electrode 60 and drain electrode 70, a gate electrode 80 was formed. For formation of gate electrode 80, an Ni layer having a thickness of 50 nm and an Au layer having a thickness of 500 nm were successively formed. The gate length was set to 2 μm.
  • In the HEMT which was group III nitride semiconductor device 4 obtained in this way, GaN layer 26 and Al0.2Ga0.8N layer 27 were formed as at least one group III nitride layer 20 on group III nitride film 13 of group III nitride composite substrate 1, and source electrode 60, drain electrode 70, and gate electrode 80 were disposed on Al0.2Ga0.8N layer 27 so that the electrodes were separated from each other and gate electrode 80 was located between source electrode 60 and drain electrode 70.
  • In a similar manner to Reference Example II-A, for group III nitride composite substrate 1, mean value mS of the RMS of support-substrate 11-side main surface 11 n and the ratio sS/mS of standard deviation sS of the RMS to mean value mS of the RMS of support-substrate 11-side main surface 11 n were calculated and summarized in Table 17. Further, thermal expansion coefficient αS of support substrate 11 and thermal expansion coefficient αIII-N of group III nitride film 13 were measured with a thermomechanical analysis apparatus, the ratio αIII-N/αS of thermal expansion coefficient αIII-N of the group III nitride film to thermal expansion coefficient αS of the support substrate was calculated, and the results were summarized in Table 17. Further, thickness tS of support substrate 11 and thickness tIII-N of group III nitride film 13 were measured with a digital indicator, the ratio tIII-N/tS of thickness tIII-N of group III nitride film 13 to thickness tS of support substrate 11 was calculated, and the results were summarized in Table 17.
  • In the following way, the yield of group III nitride semiconductor devices 4 was also calculated. Specifically, HEMTs which were group III nitride semiconductor devices 4 were classified into non-defective devices meeting a standard that the leakage gate current density was 1×10−6 A/cm2 or less when being applied with a gate voltage of 5 V, and defective devices failing to meet this standard, and the percentage of the ratio determined by dividing the non-defective devices by the sum of the non-defective devices and the defective devices was defined as a yield.
  • TABLE 17
    Reference Example II-F II-F1 II-F2 II-F3 II-F4 II-F5 II-F6 II-F7 II-F8 II-F9 II-F10 II-F11 II-F12 II-F13 II-F14
    diameter D (mm) 75 75 75 75 75 100 100 100 100 100 100 100 150 150
    type of support Al2O3—SiO2 mullite-YSZ Al2O3—SiO2 mullite Al2O3—SiO2
    substrate
    ratio αIII-N/α S 1 1 1 1 1 1 1 1 1.25 0.9 0.75 1.2 1.2 1
    ratio tIII-N/tS 0.02 0.1 0.3 0.6 1 0.4 0.4 1 0.4 0.4 0.4 0.3 0.2 0.2
    ms (nm) 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5
    ratio ss/ms 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1
    device yield (%) 62 65 75 66 64 76 72 63 63 70 62 64 63 69
  • Referring to Table 17, group III nitride semiconductor devices fabricated with a high yield were those using group III nitride composite substrate 1 in which, regardless of whether the Al2O3—SiO2 composite oxide substrate, the mullite substrate, or the mullite-YSZ substrate was used as support substrate 11, the thickness of the group III nitride film of the composite substrate was 110 μm (this value meets 10 μm to 250 μm), the diameter of the composite substrate was 75 mm to 150 mm, mean value mS of the RMS of the support-substrate-side main surface was 1.5 nm (this value meets 0.3 nm or more and 20 nm or less), and the ratio sS/mS of standard deviation sS of the RMS to mean value mS of the RMS of the support-substrate-side main surface was 0.1 (this value meets 0.005 or more and 4.0 or less). Group III nitride semiconductor devices fabricated with a high yield were also those in which the ratio αIII-N/αS of thermal expansion coefficient αIII-N of group III nitride film 13 to thermal expansion coefficient as of support substrate 11 was 0.75 or more and 1.25 or less, and the ratio tIII-N/tS of thickness of the group III nitride film to thickness tS of support substrate 11 was 0.02 or more and 1 or less.
    • Reference Example II-G
  • Referring to FIG. 12, group III nitride composite substrate 1 was fabricated in a similar manner to Reference Example II-A, except that: an Al2O3—SiO2 composite oxide substrate (with respect to the whole substrate, Al2O3 was 88% by mass and SiO2 was 12% by mass) was used as support substrate 11; support substrate 11 was subjected to grinding and finish polishing under the condition that action coefficient FE was 5.9×10−17 m2/s to thereby have a thickness of 250 μm; group III nitride composite substrates 1 were fabricated with different diameters in a range of 75 mm to 150 mm; and obtained group III nitride composite substrate 1 was further cleaned. Here, support substrate 11 had a thermal conductivity of 15 W·m−1·K−1 and a Young's modulus of 270 GPa. Regarding the cleaning method, a combination of scrub cleaning with a surfactant and pure water, two-fluid cleaning with hydrochloric acid or TMAH (tetramethylammonium hydroxide) and pure water, and megasonic cleaning with hydrochloric acid or TMAH and pure water was used.
    • 2. Fabrication of Group III Nitride Semiconductor Device
  • Referring to FIG. 11, in the present reference example, an SBD was fabricated as group III nitride semiconductor device 4. On main surface 13 m of group III nitride film 13 of group III nitride composite substrate 1 shown in FIG. 6, the MOVPE method was used to epitaxially grow n+-GaN layer 28 (having a carrier concentration of 2×1018 cm−3) with a thickness of 2 μm and n−-GaN layer 29 (having a carrier concentration of 5×1015 cm−3) with a thickness of 7 μm in this order to form group III nitride layer 20, and accordingly a laminated group III nitride composite substrate was obtained.
  • Next, on n−-GaN layer 29, an Ni layer having a thickness of 4 nm and an Au layer having a thickness of 200 nm were successively formed by the EB (Electron Beam) deposition method, and annealed into an alloy, to thereby form first electrode 30 serving as a Schottky electrode. The diameter of the electrode was set to 200 μm. On first electrode 30, a Ti layer having a thickness of 200 nm, a Pt layer having a thickness of 100 nm, and an Au layer having a thickness of 1000 nm were successively formed by the EB deposition method to thereby form a pad electrode (not shown).
  • From the laminated group III nitride composite substrate, the support substrate and the joint film were removed by grinding. For the grinding, a vitrified grinding wheel containing diamond abrasive grains having an average grain size of 40 μm to 50 μm was used.
  • Referring to FIG. 11, on main surface 13 n of group III nitride film 13 having been exposed by removal of the support substrate and the joint film from the laminated group III nitride substrate, a Ti layer having a thickness of 20 nm, an Al layer having a thickness of 200 nm, and an Au layer having a thickness of 300 nm were successively formed by the EB deposition method, and then annealed to form second electrode 50 serving as an ohmic electrode. In this way, group III nitride semiconductor device 4 serving as an SBD was obtained.
  • In a similar manner to Reference Example II-A, for group III nitride composite substrate 1, mean value mS of the RMS of support-substrate 11-side main surface 11 n was calculated and summarized in Table 18. Further, for group III nitride composite substrate 1, the concentration of impurity metal atoms in group III-nitride-film 13-side main surface 13 m was measured by the TXRF (total reflection x-ray fluorescence) method and summarized in Table 18. Here, the measurements by the TXRF method were done by means of a tungsten (W) x-ray source under a condition that the angle of incidence was 0.05°.
  • In the following way, the yield of group III nitride semiconductor devices 4 was also calculated. Specifically, for SBDs which were group III nitride semiconductor devices 4, current-voltage characteristics in the reverse direction were measured. The SBDs were classified into non-defective devices meeting a standard that the breakdown voltage of the SBD was 300 V or more and defective devices failing to meet this standard, and the percentage of the ratio determined by dividing the non-defective devices by the sum of the non-defective devices and the defective devices was defined as a yield. The yield of the group III nitride semiconductor devices is summarized in Table 18.
  • TABLE 18
    Reference Example II-G II-G1 II-G2 II-G3 II-G4 II-G5 II-G6 II-G7 II-G8
    diameter D (mm) 75 75 75 75 75 100 100 150
    concentration of impurity 10 100 300 1000 2000 8 100 10
    metal atoms (×1010 atoms/cm2)
    ms (nm) 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2
    ratio ss/ms 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25
    device yield (%) 70 68 65 63 58 69 65 69
  • Referring to Table 18, group III nitride semiconductor devices fabricated with a high yield were those using a group III nitride composite substrate with a diameter of 75 mm (this value meets 75 mm or more) including a group III nitride film with a thickness of 110 where the concentration of impurity metal atoms in the group III-nitride-film-side main surface was 3×1012 atoms/cm2 or less.
    • Reference Example II-H
  • Referring to FIGS. 14 and 15, group III nitride composite substrate 1 and group III nitride semiconductor device 4 were fabricated in a similar manner to Reference Example II-A except that: a substrate having a diameter of 75 mm and a thermal conductivity between 2 W·m−1·K−1 and 300 W·m−1·K−1 was used as support substrate 11; grinding and polishing were performed from main surface 13 m opposite to the bonded main surface of group III nitride film donor substrate 13D with a diameter of 75 mm to thereby allow group III nitride film 13 to have a thickness of 110 μm; and support-substrate 11-side main surface 11 n was finish-polished under the condition that action coefficient FE was 9.0×10−17 m2/s. Here, for grinding of group III nitride film donor substrate 13D, vitrified abrasive grains including diamond abrasive grains having an average grain size of 25 μm to 35 μm were used. The thermal conductivity of support substrate 11 was obtained by adjusting the oxide material content and the sintering conditions.
  • In a similar manner to Reference Example II-A, the yield of group III nitride semiconductor devices 4 was calculated and summarized in Table 19.
  • TABLE 19
    Reference Example II-H II-H1 II-H2 II-H3 II-H4 II-H5 II-H6 II-H7 II-H8 II-H9
    thermal conductivity of 2 3 5 10 30 120 210 280 300
    support substrate λS
    (W · m−1 · K−1)
    ms (nm) 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5
    ratio ss/ms 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08
    device yield (%) 55 63 65 67 67 66 64 61 55
  • Referring to Table 19, group III nitride semiconductor devices fabricated with a high yield were those using a group III nitride composite substrate with a diameter of 75 mm (this value meets 75 mm or more) including a group III nitride film with a thickness of 110 μm (this value meets 10 μm or more and 250 μm or less) and including a support substrate having a thermal conductivity of 3 W·m−1·K−1 or more and 280 W·m−1·K−1 or less.
  • Reference Example III-A to Reference Example III-D according to Reference Invention III will be illustrated below.
    • (1) Fabrication of Group III Nitride Composite Substrate Reference Example III-A
  • In the following, with reference to FIG. 12, a group III nitride composite substrate according to the reference example will be described.
  • First, as shown in FIG. 12 (A), an Al2O3—SiO2 composite oxide substrate (with respect to the whole substrate, Al2O3 was 85% by mass and SiO2 was 15% by mass) having a diameter of 75 mm and a thickness of 300 μm was prepared for use as support substrate 11. Support substrate 11 had a thermal conductivity of 10 W·m−1·K−1 and a Young's modulus of 250 GPa.
  • Subsequently, main surfaces 11 m, 11 n of the two opposite sides respectively of support substrate 11 were subjected to rough polishing with a copper-based surface plate, intermediate polishing with a tin-based surface plate, and finish polishing with a nonwoven polishing pad, for which a diamond slurry was used as an abrasive. The finish polishing was performed under the condition that action coefficient FE was 4×10−17 m2/s or more and 1×10−16 m2/s or less.
  • Next, on finish-polished main surface 11 m of support substrate 11, an SiO2 film of 800 nm in thickness was grown by the PE-CVD (Plasma Enhanced-Chemical Vapor Deposition) method, and annealed in a nitrogen atmosphere at 800° C. for an hour.
  • Next, CMP using a slurry with a pH of 10 containing colloidal silica abrasive grains having an average grain size of 40 nm was performed to thereby form joint film 12 a of 400 nm in thickness having its main surface 12 am mirror-finished so that the RMS (root mean square roughness) was 0.3 nm or less. Subsequently, in order to remove the colloidal silica abrasive grains used for the CMP, non-abrasive polishing cleaning with a KOH aqueous solution, polishing cleaning with pure water, and megasonic cleaning (cleaning with ultrasonic waves in a megasonic frequency range of 500 kHz to 5 MHz) with pure water were performed.
  • As shown in FIG. 12 (B), a GaN crystal body having a diameter of 75 mm and a thickness of 8 mm was prepared for use as group III nitride film donor substrate 13D. Subsequently, a surface-to-be-bonded of group III nitride film donor substrate 13D was subjected to mechanical polishing and CMP so that it was planarized to have an RMS of 2 nm or less. An SiO2 film of 800 nm in thickness was grown thereon by the PE-CVD method, and annealing was performed in a nitrogen atmosphere at 800° C. for an hour. Subsequently, CMP using a slurry with a pH of 10 containing colloidal silica abrasive grains having an average grain size of 40 nm was performed to thereby form joint film 12 b of 500 nm in thickness having its main surface 12 bn mirror-finished so that the RMS was 0.3 nm or less. Subsequently, in order to remove the colloidal silica abrasive grains used for the CMP, non-abrasive polishing cleaning with a KOH aqueous solution, polishing cleaning with pure water, and megasonic cleaning with pure water were performed.
  • Here, group III nitride film donor substrate 13D was produced through growth by the HVPE method using a GaAs substrate as a base substrate. Group III nitride film donor substrate 13D had its electrical conductivity of n-type, its dislocation density of 1×108 cm−2, and its carrier concentration of 1×1017 cm−3.
  • Next, as shown in FIG. 12 (C), main surface 12 am of joint film 12 a and main surface 12 bn of joint film 12 b were bonded together to thereby produce joined substrate 1L in which support substrate 11 and group III nitride film 13 were bonded to each other with joint film 12 interposed therebetween. After they were bonded together, joined substrate 1L was annealed by being heated in a nitrogen gas atmosphere to 800° C., to thereby increase the joint strength.
  • Next, as shown in FIG. 12 (D), group III nitride film donor substrate 13D in joined substrate 1L was cut, with a wire saw, along a plane located inwardly at a depth of 40 μm from the bonded surface where group III nitride film donor substrate 13D was bonded to joint film 12, to thereby produce group III nitride composite substrate 1 in which support substrate 11 and group III nitride film 13 which was a GaN thin film were bonded together with joint film 12 interposed therebetween.
  • As the wire, a fixed-abrasive wire with a diameter of 180 μm on which diamond abrasive grains were electrodeposited was used. As for the cutting method, in order to reduce the cut resistance and enhance the thickness precision and the flatness of the cut plane, the method was used that caused the wire to swing and caused group III nitride film donor substrate 13D to vibrate in synchronization therewith. The resistance coefficient for cutting with the wire saw was set to 4200 N.
  • After cutting, group III nitride film 13 of group III nitride composite substrate 1 was subjected to mechanical polishing and CMP. At this time, a diamond slurry was used as an abrasive, and rough polishing with a copper-based surface plate and intermediate polishing with a tin-based surface plate were performed. Further, a colloidal silica slurry with pH 11 (a slurry of pH 11 containing colloidal silica abrasive grains having an average grain size of 60 nm) was used to perform finish polishing with a nonwoven polishing pad. In order to make the thickness of group III nitride film 13 uniform, the composite substrate was mounted on the apparatus for the CMP, by a method according to which the shape of the substrate was corrected in advance by vacuum chuck suction, and thereafter the composite substrate was suction-fixed onto the apparatus. The finish polishing was performed under the condition that action coefficient FE was 7×10−14 m2/s. The thickness of finish-polished group III nitride film 13 was 110 μm.
    • (2) Fabrication of Group III Nitride Semiconductor Device
  • In the following, with reference to FIG. 16, an SBD (Schottky Barrier Diode) which is a group III nitride semiconductor device according to the reference example will be described.
  • First, as shown in FIG. 16 (A), on group III-nitride-film 13-side main surface 13 m of group III nitride composite substrate 1, the MOVPE method was used to epitaxially grow n-GaN layer 28 (having a carrier concentration of 2×1018 cm−3) with a thickness of 2 μm and n−-GaN layer 29 (having a carrier concentration of 5×1015 cm−3) with a thickness of 7 μm in this order to form group III nitride layer 20, and accordingly laminated group III nitride composite substrate 2 was obtained.
  • Next, as shown in FIG. 16 (B), on n−-GaN layer 29 which was the topmost layer of group III nitride layer 20 of laminated group III nitride composite substrate 2, an Ni layer having a thickness of 4 nm and an Au layer having a thickness of 200 nm were successively formed by the electron beam deposition method (hereinafter also referred to as EB (Electron Beam) deposition method), and annealed into an alloy, to thereby form first electrode 30 serving as a Schottky electrode. At this time, the diameter of first electrode 30 was set to 200 μm. Further, on first electrode 30, a Ti layer having a thickness of 200 nm, a Pt layer having a thickness of 100 nm, and an Au layer having a thickness of 1000 nm were successively formed by the EB deposition method to thereby form a pad electrode 33.
  • As device support substrate 40, an Mo substrate was prepared. On device support substrate 40, a Ti layer having a thickness of 200 nm, a Pt layer having a thickness of 100 nm, and an Au layer having a thickness of 1000 nm were successively formed by the EB deposition method to thereby form pad electrode 43. On pad electrode 43, an AuSn solder film was formed as joint metal film 44.
  • Next, joint metal film 44 was bonded to pad electrode 33 to thereby produce laminated substrate 3.
  • Next, as shown in FIG. 16 (C), from laminated substrate 3, support substrate 11 and joint film 12 in group III nitride composite substrate 1 were etched away by means of hydrofluoric acid.
  • Next, as shown in FIG. 16 (D), on group III nitride film 13 having been exposed by removal of support substrate 11 and joint film 12 from laminated substrate 3, a Ti layer having a thickness of 20 nm, an Al layer having a thickness of 200 nm, and an Au layer having a thickness of 300 nm were successively formed by the EB deposition method, and then annealed to form second electrode 50 which was an ohmic electrode. On device support substrate 40, a Ti layer having a thickness of 20 nm and an Au layer having a thickness of 300 nm were successively formed by the EB deposition method, and annealed to thereby form device support substrate electrode 45. In this way, group III nitride semiconductor device 4 which was an SBD was obtained.
  • The yield of group III nitride semiconductor devices 4 thus obtained was calculated in the following way. Specifically, for SBDs, current-voltage characteristics in the reverse direction were measured. The SBDs were classified into non-defective devices meeting a standard that the breakdown voltage was 250 V or more and defective devices failing to meet this standard, and the percentage of the ratio determined by dividing the non-defective devices by the sum of the non-defective devices and the defective devices was defined as a yield.
  • In accordance with the method as described above, group III nitride composite substrates each including the joint film having a thickness variation shown in Table 20, and group III nitride semiconductor devices for which the composite substrates were used were fabricated.
  • These group III nitride composite substrates were each a composite substrate having a diameter of 75 mm (namely 75 mm or more) in which a support substrate and a group III nitride film having a thickness of 110 μm (namely 10 μm or more and 250 μm or less) were bonded to each other.
  • A relation between the thickness variation of the joint film and the yield of the group III nitride semiconductor devices calculated by the above-described method is shown in Table 20.
  • TABLE 20
    Reference Example III-A III-A1 III-A2 III-A3 III-A4 III-A5 III-A6 III-A7
    thickness variation of 1 2 5 13 25 40 47
    joint film (%)
    device yield (%) 35 69 77 84 76 71 33
  • As clearly seen from Table 20, the yield of the semiconductor devices (III-A2 to III-A6) in which group III nitride composite substrates each having a thickness variation of the joint film of 2% or more and 40% or less were used was higher than that of the semiconductor devices (III-A1 and III-A7) in which group III nitride composite substrates failing to satisfy this condition were used.
    • Reference Example III-B
  • In a similar manner to Reference Example III-A, group III nitride composite substrates each including a support substrate and a group III nitride film joined to each other with the shear joint strength and the ratio of the joint area shown in Table 21, and group III nitride semiconductor devices for which these composite substrates were used were fabricated.
  • These group III nitride composite substrates were each a composite substrate having a diameter of 75 mm (namely 75 mm or more) in which a support substrate and a group III nitride film having a thickness of 110 μm (namely 10 μm or more and 250 μm or less) were bonded to each other.
  • A relation between the shear joint strength and the ratio of the joint area and the yield of the group III nitride semiconductor devices calculated by the above-described method is shown in Table 21.
  • TABLE 21
    Reference Example III-B III-B1 III-B2 III-B3 III-B4 11I-B5 III-B6 II1-B7 III-B8 III-B9
    shear joint strength (MPa) 2 4 4 10 30 33 40 40 60
    ratio of joint area (%) 80 60 99 70 90 51 60 99 99
    device yield (%) 25 66 69 75 84 39 64 74 56
  • As clearly seen from Table 21, the yield of the semiconductor devices (III-B2 to III-B5, III-B7, and III-B8) in which used group III nitride composite substrates each having a shear joint strength between the support substrate and the group III nitride film of 4 MPa or more and 40 MPa or less and a ratio of the joint area between the support substrate and the group III nitride film of 60% or more and 99% or less was higher than that of the semiconductor devices (III-B1, III-B6, and III-B9) in which group III nitride composite substrates failing to satisfy this condition were used.
    • Reference Example III-C
  • In a similar manner to Reference Example III-A except for the following conditions (i) to (v), group III nitride composite substrates according to Reference Example III-C and group III nitride semiconductor devices for which these composite substrates were used were fabricated:
  • (i) a composite oxide substrate selected from an Al2O3—SiO2 composite oxide substrate (composite oxide substrate in which, with respect to the whole substrate, Al2O3 was 82% by mass and SiO2 was 18% by mass), a mullite-YSZ substrate, and a mullite substrate was used as support substrate 11;
  • (ii) different diameters in a range of 75 mm to 150 mm were used;
  • (iii) joint film 12 was grown by the AP-CVD (Atmospheric Pressure-Chemical Vapor Deposition) method;
  • (iv) support-substrate 11-side main surface 11 n was finish-polished under the condition that action coefficient FE was 8.5×10−17 n2/s or more and 1×10−16 m2/s or less; and
  • (v) finish-polished group III nitride films 13 having different thicknesses in a range of 10 μm to 250 μm were used.
  • It should be noted that the thickness variations of the joint films in group III nitride composite substrates in Reference Example III-C were all 5% (namely 2% or more and 40% or less).
  • The relation between the characteristics of the group III nitride composite substrates in Reference Example III-C and the yield of group III nitride semiconductor devices for which the composite substrates are used is shown in Table 22.
  • TABLE 22
    Reference Example III-C
    III- III- III- III- III- III- III- III- III- III- III- III- III-
    C1 C2 C3 C4 C5 C6 C7 08 C9 C10 C11 C12 C13
    diameter (mm) 75 75 75 75 100 100 100 100 100 100 100 150 150
    type of support Al2O3—SiO2 mullite-YSZ Al2O3—SiO2 mullite Al2O3—SiO2
    substrate
    αIII-N/αS(—) 1 1 1 1 1 1 1 1.25 0.9 0.75 1.2 1.2 1
    tIII-N/tS(—) 0.02 0.1 0.3 0.6 1 0.4 0.9 1 1 1 0.4 1 0.2
    thickness 5 5 5 5 5 5 5 5 5 5 5 5 5
    variation of
    joint film (%)
    device yield (%) 62 70 72 69 69 76 65 68 75 67 60 55 69
  • In Table 22, αIII-N/αS represents the ratio of thermal expansion coefficient αIII-N of the group III nitride film to thermal expansion coefficient αS of the support substrate, and tIII-N/tS represents the ratio of thickness of the group III nitride film to thickness tS of the support substrate.
  • As clearly seen from Table 22, among the group III nitride composite substrates having a diameter of 75 mm or more and including the support substrate and the group III nitride film with a thickness of 10 μm or more and 250 μm or less that were bonded to each other, where the joint film had a thickness variation of 5% (namely 2% or more and 40% or less), group III nitride composite substrates having tIII-N/tS of 0.02 or more and 1 or less could be used to manufacture group III nitride semiconductor devices with a particularly high yield.
  • In addition to the above, in the composite substrates having αIII-N/αS of 0.75 or more and 1.25 or less, crack did not occur at all, and their yield was also high.
    • Reference Example III-D
  • In a similar manner to Reference Example III-A except that a support substrate having thermal conductivity λS shown in Table 23 was used, group III nitride composite substrates and group III nitride semiconductor devices for which these composite substrates were used were fabricated.
  • The relation between thermal conductivity λS of the support substrate and the yield of group III nitride semiconductor devices is shown in Table 23.
  • TABLE 23
    Reference Example III-D III-D 1 III-D2 III-D3 III-D4 III-D5 III-D6 III-D7 III-D8 III-D9
    thermal conductivity of 2 3 5 10 30 120 210 280 300
    support substrate λS
    (W · m−1 · K−1)
    thickness variation of 5 5 5 5 5 5 5 5 5
    joint film (%)
    device yield (%) 55 63 65 67 67 66 64 61 55
  • As clearly seen from Table 23, among the group III nitride composite substrates having a diameter of 75 mm (namely 75 mm or more) and including the support substrate and the group III nitride film with a thickness of 110 μm (namely 10 μm or more and 250 μm or less) that were bonded to each other, where the joint film had a thickness variation of 5% (namely 2% or more and 40% or less), group III nitride composite substrates having a thermal conductivity λS of 3 W·m−1·K−1 or more and 280 W·m−1·K−1 or less could be used to manufacture group III nitride semiconductor devices with a particularly high yield.
  • It should be construed that the embodiments and examples disclosed herein are given by way of illustration in all respects, not by way of limitation. It is intended that the scope of the present invention is defined by claims, not by the description above, and encompasses all modifications and variations equivalent in meaning and scope to the claims.
    • REFERENCE SIGNS LIST
  • 1 group III nitride composite substrate; 1L, 1LS joined substrate; 2 laminated group III nitride composite substrate; 3 laminated substrate; 4 group III nitride semiconductor device; 5D, 5Dr support-incorporated group III nitride film donor substrate; 11 support substrate; 11 m, 11 n, 12 am, 12 bn, 13 m, 13 n main surface; 12, 12 a, 12 b, 14 joint film; 13 group III nitride film; 13D, 13Dr group III nitride film donor substrate; 13 h main-surface through hole; 13 i ion implantation region; 15 group III nitride film donor substrate support; 20 group III nitride layer; 21 n-GaN layer; 22 n-In0.05Ga0.95N layer; 23 active layer; 24 p-Al0.09Ga0.91N layer; 25 p-GaN layer; 26 GaN layer; 27 Al0.2Ga0.8N layer; 28 n+-GaN layer; 29 n−-GaN layer; 30 first electrode; 33, 43 pad electrode; 40 device support substrate; 44 joint metal film; 45 device support substrate electrode; 50 second electrode; 60 source electrode; 70 drain electrode; 80 gate electrode; 100 joint interface; 100 b joined region; 100 n non-joined region; 111 n, 112 n, 121 n, 122 n non-joined partial region; 201 first-conductivity-type GaN layer; 202 first-conductivity-type AlsGa1-sN layer; 203 light emission layer; 204 second-conductivity-type AltGa1-tN layer; 205 second-conductivity-type GaN layer

Claims (10)

1. A group III nitride composite substrate comprising a group III nitride film and a support substrate formed from a material different in chemical composition from said group III nitride film,
said group III nitride film being joined to said support substrate in one of a direct manner and an indirect manner,
said group III nitride film having a thickness of 10 μm or more, and a sheet resistance of a group III-nitride-film-side main surface of said group III nitride composite substrate being 200 Ω/sq or less.
2. The group III nitride composite substrate according to claim 1, wherein
an area of a joined region joining said group III nitride film and said support substrate is 70% or more relative to an area of the main surface, and
a non-joined region failing to join said group III nitride film and said support substrate includes at least one non-joined partial region, and said non-joined partial region is a small non-joined partial region having a maximum size in radial direction of less than 20 mm.
3. The group III nitride composite substrate according to claim 1, wherein a non-joined region failing to join said group III nitride film and said support substrate includes at least one non-joined partial region, and said non-joined partial region is an inner non-joined partial region failing to abut on a perimeter of the main surface.
4. The group III nitride composite substrate according to claim 1, wherein said group III nitride film has a main-surface through hole, and an area of said main-surface through hole is 10% or less relative to an area of the main surface.
5. The group III nitride composite substrate according to claim 1, wherein a joint interface between said group III nitride film and said support substrate includes an impurity containing metal, and the concentration of said impurity is 1×1010 cm−2 or more.
6. The group III nitride composite substrate according to claim 1, wherein said group III nitride film has a thermal expansion coefficient of more than 0.7 times and less than 1.4 times as large as a thermal expansion coefficient of said support substrate.
7. The group III nitride composite substrate according to claim 1, wherein said support substrate has a fracture toughness of 1 MNm−2/3 or more, and said support substrate has a thickness of 50 μm or more.
8. The group III nitride composite substrate according to claim 1, wherein said indirect manner is a manner of interposing a joint film between said group III nitride film and said support substrate.
9. A method for manufacturing a group III nitride composite substrate as recited in claim 1, comprising the steps of:
bonding said group III nitride film and said support substrate to each other in one of a direct manner and an indirect manner; and
reducing the thickness of at least one of said group III nitride film and said support substrate bonded to each other.
10. A method for manufacturing a group III nitride semiconductor device using a group III nitride composite substrate as recited in claim 1, comprising the steps of:
preparing said group III nitride composite substrate; and
growing at least one group III nitride layer on the group III-nitride-film-side main surface of said group III nitride composite substrate.
US14/419,315 2012-10-12 2013-09-04 Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device Active 2033-10-20 US9917004B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/419,315 US9917004B2 (en) 2012-10-12 2013-09-04 Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device

Applications Claiming Priority (16)

Application Number Priority Date Filing Date Title
US201261712967P 2012-10-12 2012-10-12
JP2012226777 2012-10-12
JP2012-226777 2012-10-12
JP2012-263090 2012-11-30
JP2012263090 2012-11-30
US201361762407P 2013-02-08 2013-02-08
JP2013029114A JP6248395B2 (en) 2013-02-18 2013-02-18 Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, group III nitride semiconductor device and method for manufacturing the same
JP2013-029115 2013-02-18
JP2013029115A JP6322890B2 (en) 2013-02-18 2013-02-18 Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
JP2013-029125 2013-02-18
JP2013029125A JP6146042B2 (en) 2013-02-18 2013-02-18 Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, group III nitride semiconductor device and method for manufacturing the same
JP2013-029114 2013-02-18
JP2013179839A JP6232853B2 (en) 2012-10-12 2013-08-30 Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, group III nitride semiconductor device and method for manufacturing the same
JP2013-179839 2013-08-30
US14/419,315 US9917004B2 (en) 2012-10-12 2013-09-04 Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
PCT/JP2013/073805 WO2014057748A1 (en) 2012-10-12 2013-09-04 Group iii nitride composite substrate, manufacturing method therefor, and group iii nitride semiconductor device manufacturing method

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2013/073805 A-371-Of-International WO2014057748A1 (en) 2012-10-12 2013-09-04 Group iii nitride composite substrate, manufacturing method therefor, and group iii nitride semiconductor device manufacturing method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US15/879,018 Continuation US10600676B2 (en) 2012-10-12 2018-01-24 Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device

Publications (2)

Publication Number Publication Date
US20150194442A1 true US20150194442A1 (en) 2015-07-09
US9917004B2 US9917004B2 (en) 2018-03-13

Family

ID=53218596

Family Applications (3)

Application Number Title Priority Date Filing Date
US14/419,315 Active 2033-10-20 US9917004B2 (en) 2012-10-12 2013-09-04 Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
US15/879,018 Active 2033-11-01 US10600676B2 (en) 2012-10-12 2018-01-24 Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
US16/787,700 Active 2033-09-08 US11094537B2 (en) 2012-10-12 2020-02-11 Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device

Family Applications After (2)

Application Number Title Priority Date Filing Date
US15/879,018 Active 2033-11-01 US10600676B2 (en) 2012-10-12 2018-01-24 Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
US16/787,700 Active 2033-09-08 US11094537B2 (en) 2012-10-12 2020-02-11 Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device

Country Status (5)

Country Link
US (3) US9917004B2 (en)
EP (1) EP2908330B1 (en)
CN (2) CN108281378B (en)
TW (2) TWI644346B (en)
WO (1) WO2014057748A1 (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160351750A1 (en) * 2014-05-21 2016-12-01 Xiamen Sanan Optoelectronics Technology Co., Ltd. Fabrication Method of Nitride Light Emitting Diodes
US20160365438A1 (en) * 2015-06-15 2016-12-15 Fuji Electric Co., Ltd. Method of manufacturing nitride semiconductor device and nitride semiconductor device
US9815019B1 (en) * 2015-10-22 2017-11-14 King Fahd University Of Petroleum And Minerals Gas separation device with nanocomposite membrane
US9917004B2 (en) 2012-10-12 2018-03-13 Sumitomo Electric Industries, Ltd. Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
US9923063B2 (en) 2013-02-18 2018-03-20 Sumitomo Electric Industries, Ltd. Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same
US20180174823A1 (en) * 2016-12-15 2018-06-21 Samsung Electronics Co., Ltd. Manufacturing method of gallium nitride substrate
US10186451B2 (en) 2013-02-08 2019-01-22 Sumitomo Electric Industries, Ltd. Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
US20190074405A1 (en) * 2017-09-07 2019-03-07 Toyoda Gosei Co., Ltd. Production method for group iii nitride semiconductor
US10290489B2 (en) * 2016-10-21 2019-05-14 Sciocs Company Limited Method for manufacturing group-III nitride substrate and group-III nitride substrate
US10340886B2 (en) * 2016-03-22 2019-07-02 Sumitomo Electric Industries, Ltd. Ceramic substrate, layered body, and saw device
US20190206686A1 (en) * 2016-08-18 2019-07-04 Tokai Carbon Korea Co., Ltd. Component for fabricating sic semiconductor, having plurality of layers having different transmittances, and method for manufacturing same
US10971374B2 (en) * 2017-09-21 2021-04-06 Sumitomo Electric Industries, Ltd. Semi-insulating compound semiconductor substrate and semi-insulating compound semiconductor single crystal

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170015285A (en) * 2014-06-13 2017-02-08 인텔 코포레이션 High electron mobility transistor fabrication process on reverse polarized substrate by layer transfer
JP6662160B2 (en) * 2016-04-07 2020-03-11 住友電気工業株式会社 Polycrystalline ceramic substrate, polycrystalline ceramic substrate with bonding layer and laminated substrate
WO2017179868A1 (en) * 2016-04-12 2017-10-19 주식회사 루미스탈 Method for manufacturing nitride semiconductor substrate including semi-insulating nitride semiconductor layer, and nitride semiconductor substrate manufactured thereby
US10438792B2 (en) * 2016-10-20 2019-10-08 QROMIS, Inc. Methods for integration of elemental and compound semiconductors on a ceramic substrate
EP3655989A1 (en) * 2017-07-20 2020-05-27 Swegan AB A heterostructure for a high electron mobility transistor and a method of producing the same
US11031167B2 (en) * 2017-11-21 2021-06-08 University Of New Hampshire Giant perpendicular magnetic anisotropy in Fe/GaN thin films for data storage and memory devices
CN109508786B (en) * 2018-09-29 2022-04-08 南京邮电大学 Photon brain device for learning, memorizing, judging and identifying and preparation method thereof
JP7262027B2 (en) * 2019-05-17 2023-04-21 パナソニックＩｐマネジメント株式会社 Method for manufacturing group III nitride semiconductor
CN110718453B (en) * 2019-11-15 2021-08-20 武汉新芯集成电路制造有限公司 Semiconductor device and method for manufacturing the same

Citations (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5406123A (en) * 1992-06-11 1995-04-11 Engineering Research Ctr., North Carolina State Univ. Single crystal titanium nitride epitaxial on silicon
JPH09219540A (en) * 1996-02-07 1997-08-19 Rikagaku Kenkyusho Forming method of gan thin film
US6391748B1 (en) * 2000-10-03 2002-05-21 Texas Tech University Method of epitaxial growth of high quality nitride layers on silicon substrates
US6413627B1 (en) * 1998-06-18 2002-07-02 Sumitomo Electric Industries, Ltd. GaN single crystal substrate and method of producing same
JP2002319545A (en) * 2001-04-20 2002-10-31 Mitsubishi Cable Ind Ltd MANUFACTURING METHOD OF GaN CRYSTAL AND BASE MATERIAL FOR CRYSTAL GROWTH
US6521514B1 (en) * 1999-11-17 2003-02-18 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates
US6617060B2 (en) * 2000-12-14 2003-09-09 Nitronex Corporation Gallium nitride materials and methods
US6673149B1 (en) * 2000-09-06 2004-01-06 Matsushita Electric Industrial Co., Ltd Production of low defect, crack-free epitaxial films on a thermally and/or lattice mismatched substrate
US20040072410A1 (en) * 1997-10-30 2004-04-15 Kensaku Motoki GaN single crystal substrate and method of making the same
KR20040078211A (en) * 2003-03-03 2004-09-10 엘지전자 주식회사 Method for manufacturing GaN substrate
US20040232440A1 (en) * 2003-05-21 2004-11-25 Sanken Electric Co., Ltd. Compound semiconductor substrates and method of fabrication
US20050103257A1 (en) * 2003-11-13 2005-05-19 Xueping Xu Large area, uniformly low dislocation density GaN substrate and process for making the same
US20050124161A1 (en) * 2003-10-23 2005-06-09 Rawdanowicz Thomas A. Growth and integration of epitaxial gallium nitride films with silicon-based devices
US6989202B2 (en) * 2000-11-21 2006-01-24 Ngk Insulators, Ltd. Method for fabricating a III nitride film, an underlayer for fabricating a III nitride film and a method for fabricating the same underlayer
US20060046331A1 (en) * 2004-09-01 2006-03-02 Sumitomo Electric Industries, Ltd. Epitaxial substrate and semiconductor element
JP2006210660A (en) * 2005-01-28 2006-08-10 Hitachi Cable Ltd Manufacturing method of semiconductor substrate
US20060267043A1 (en) * 2005-05-27 2006-11-30 Emerson David T Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
US20060278891A1 (en) * 2005-06-10 2006-12-14 Saxler Adam W Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates
US20070051969A1 (en) * 2005-09-06 2007-03-08 Hitachi Cable, Ltd. Group III-V nitride-based semiconductor substrate and method of making same
US20070141823A1 (en) * 2005-12-12 2007-06-21 Kyma Technologies, Inc. Inclusion-free uniform semi-insulating group III nitride substrates and methods for making same
US20070158785A1 (en) * 2002-12-27 2007-07-12 General Electric Company Gallium nitride crystals and wafers and method of making
US20070164306A1 (en) * 2004-05-18 2007-07-19 Sumitomo Electric Industries, Ltd. Group III nitride semiconductor crystal and method of its manufacture, group III nitride semiconductor device and method of its manufacture, and light-emitting appliance
KR20080065792A (en) * 2007-01-10 2008-07-15 삼성코닝정밀유리 주식회사 Gallium nitride substrate and method of manufacturing the same
US20080296584A1 (en) * 2007-05-30 2008-12-04 Sumitomo Electric Industries, Ltd. III-V Nitride Semiconductor Layer-Bonded Substrate and Semiconductor Device
US20080315209A1 (en) * 2005-04-26 2008-12-25 Sumitomo Electric Industries, Ltd. Group III Nitride Semiconductor Device and Epitaxial Substrate
US20090155987A1 (en) * 2007-12-18 2009-06-18 Samsung Corning Precision Glass Co., Ltd. Method of fabricating gallium nitride substrate
KR20090065860A (en) * 2007-12-18 2009-06-23 삼성코닝정밀유리 주식회사 Fabricating method for gallium nitride wafer
US20100025228A1 (en) * 2006-12-19 2010-02-04 Tauzin Aurelie Method for Preparing Thin GaN Layers by Implantation and Recycling of a Starting Substrate
US20110018003A1 (en) * 2005-01-11 2011-01-27 Sumitomo Electric Industries, Ltd. Group iii nitride semiconductor substrate and manufacturing method thereof
US20110101502A1 (en) * 2009-11-05 2011-05-05 Fairfield Crystal Technology, Llc Composite wafers and substrates for iii-nitride epitaxy and devices and methods therefor
US20110108886A1 (en) * 2000-08-04 2011-05-12 The Regents Of The University Of California Method of controlling stress in group-iii nitride films deposited on substrates
US20110121311A1 (en) * 2009-01-23 2011-05-26 Sumitomo Electric Industries, Ltd. Method for manufacturing semiconductor substrate, method for manufacturing semiconductor device, semiconductor substrate, and semiconductor device
US20110272734A1 (en) * 2009-01-16 2011-11-10 Sumitomo Electric Industries, Ltd. Light-Emitting Device Substrate
US20110298009A1 (en) * 2008-11-27 2011-12-08 Dowa Electronics Materials Co., Ltd. Epitaxial substrate for electronic device and method of producing the same
US20120070929A1 (en) * 2009-04-30 2012-03-22 Koha Co., Ltd. Method for fabricating wafer product and method for fabricating gallium nitride based semiconductor optical device
US20120174855A1 (en) * 2011-01-12 2012-07-12 Hon Hai Precision Industry Co., Ltd. Method for making epitaxial structure
US20120305066A1 (en) * 2011-06-06 2012-12-06 International Business Machines Corporation Use of metal phosphorus in metallization of photovoltaic devices and method of fabricating same
US20130032928A1 (en) * 2010-11-12 2013-02-07 Sumitomo Electric Industries, Ltd. Group iii nitride composite substrate
US20130149492A1 (en) * 2010-08-20 2013-06-13 Kyung Byung Yoon Porous thin film having holes and a production method therefor
US20130260093A1 (en) * 2012-03-28 2013-10-03 Yang Wei Epitaxial base
US20130285067A1 (en) * 2010-11-18 2013-10-31 Jean-Marc BETHOUX Method for forming a buried metal layer structure
US20130316507A1 (en) * 2011-01-25 2013-11-28 Sumitomo Electric Industries, Ltd. Method for manufacturing nitride semiconductor element
US20140342127A1 (en) * 2013-05-15 2014-11-20 International Business Machines Corporation Formation of large scale single crystalline graphene
US9312165B2 (en) * 2013-02-08 2016-04-12 Sumitomo Electric Industries, Ltd. Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device

Family Cites Families (149)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1960014A (en) 1930-06-30 1934-05-22 Johnston Edwin Lloyd Float valve
JP3026087B2 (en) * 1989-03-01 2000-03-27 豊田合成株式会社 Gas phase growth method of gallium nitride based compound semiconductor
US5290393A (en) * 1991-01-31 1994-03-01 Nichia Kagaku Kogyo K.K. Crystal growth method for gallium nitride-based compound semiconductor
US5679152A (en) * 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
JP3306578B2 (en) * 1996-10-24 2002-07-24 昭和電工株式会社 Compound semiconductor epitaxial wafer
US5741724A (en) * 1996-12-27 1998-04-21 Motorola Method of growing gallium nitride on a spinel substrate
US6091083A (en) * 1997-06-02 2000-07-18 Sharp Kabushiki Kaisha Gallium nitride type compound semiconductor light-emitting device having buffer layer with non-flat surface
US6194742B1 (en) * 1998-06-05 2001-02-27 Lumileds Lighting, U.S., Llc Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices
TW418549B (en) * 1998-06-26 2001-01-11 Sharp Kk Crystal growth method for nitride semiconductor, nitride semiconductor light emitting device, and method for producing the same
US6713789B1 (en) * 1999-03-31 2004-03-30 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and method of producing the same
US6563144B2 (en) * 1999-09-01 2003-05-13 The Regents Of The University Of California Process for growing epitaxial gallium nitride and composite wafers
JP4547746B2 (en) * 1999-12-01 2010-09-22 ソニー株式会社 Method for producing crystal of nitride III-V compound
FR2810159B1 (en) * 2000-06-09 2005-04-08 Centre Nat Rech Scient THICK LAYER OF GALLIUM NITRIDE OR MIXED NITRIDE OF GALLIUM AND ANOTHER METAL, PROCESS FOR PREPARING THE SAME, AND ELECTRONIC OR OPTOELECTRONIC DEVICE COMPRISING SUCH A LAYER
JP5145617B2 (en) * 2000-07-03 2013-02-20 日亜化学工業株式会社 N-type nitride semiconductor laminate and semiconductor device using the same
JP2002274996A (en) * 2001-01-15 2002-09-25 Ngk Insulators Ltd Epitaxial ground substrate and epitaxial substrate
US6497763B2 (en) * 2001-01-19 2002-12-24 The United States Of America As Represented By The Secretary Of The Navy Electronic device with composite substrate
AU2002306436A1 (en) * 2001-02-12 2002-10-15 Asm America, Inc. Improved process for deposition of semiconductor films
JP2002343717A (en) * 2001-05-18 2002-11-29 Matsushita Electric Ind Co Ltd Method for producing semiconductor crystal
US6488767B1 (en) * 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
JP2003063897A (en) * 2001-08-28 2003-03-05 Sony Corp Nitride-based iii-v group compound semiconductor substrate and method for producing the same, method for producing light emitting device of semiconductor and method for producing semiconductor device
JP3856750B2 (en) * 2001-11-13 2006-12-13 松下電器産業株式会社 Semiconductor device and manufacturing method thereof
JP2003165798A (en) 2001-11-28 2003-06-10 Hitachi Cable Ltd Method for producing gallium nitride single crystal substrate, free standing substrate for epitaxial growth of gallium nitride single crystal, and device element formed on the same
JP2003197961A (en) * 2001-12-27 2003-07-11 Toyoda Gosei Co Ltd Group iii nitride-based compound semiconductor light emitting element
JP3878868B2 (en) * 2002-03-01 2007-02-07 シャープ株式会社 GaN-based laser element
US6812471B2 (en) 2002-03-13 2004-11-02 Applied Materials, Inc. Method of surface texturizing
JP2003327497A (en) * 2002-05-13 2003-11-19 Sumitomo Electric Ind Ltd GaN SINGLE CRYSTAL SUBSTRATE, NITRIDE-BASED SEMICONDUCTOR EPITAXIAL SUBSTRATE, NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME
KR100952015B1 (en) * 2002-12-10 2010-04-08 엘지이노텍 주식회사 Fabrication method for a semiconductor device
US7427555B2 (en) * 2002-12-16 2008-09-23 The Regents Of The University Of California Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy
US20060169996A1 (en) * 2002-12-27 2006-08-03 General Electric Company Crystalline composition, wafer, and semi-conductor structure
US6989314B2 (en) * 2003-02-12 2006-01-24 S.O.I.Tec Silicon On Insulator Technologies S.A. Semiconductor structure and method of making same
JP2004247412A (en) * 2003-02-12 2004-09-02 Yamaha Corp Semiconductor multilayer structure, its fabricating method, and semiconductor device having that structure
GB2398672A (en) * 2003-02-19 2004-08-25 Qinetiq Ltd Group IIIA nitride buffer layers
JP4052150B2 (en) * 2003-03-05 2008-02-27 住友電気工業株式会社 Manufacturing method of nitride semiconductor device
KR100550491B1 (en) 2003-05-06 2006-02-09 스미토모덴키고교가부시키가이샤 Nitride semiconductor substrate and processing method of nitride semiconductor substrate
JP3913194B2 (en) * 2003-05-30 2007-05-09 シャープ株式会社 Nitride semiconductor light emitting device
US7125801B2 (en) * 2003-08-06 2006-10-24 Matsushita Electric Industrial Co., Ltd. Method of manufacturing Group III nitride crystal substrate, etchant used in the method, Group III nitride crystal substrate, and semiconductor device including the same
JP4380294B2 (en) * 2003-10-29 2009-12-09 日立電線株式会社 Group III-V nitride semiconductor substrate
US7276779B2 (en) * 2003-11-04 2007-10-02 Hitachi Cable, Ltd. III-V group nitride system semiconductor substrate
US7118813B2 (en) * 2003-11-14 2006-10-10 Cree, Inc. Vicinal gallium nitride substrate for high quality homoepitaxy
JP3894191B2 (en) * 2003-11-26 2007-03-14 住友電気工業株式会社 Method for forming gallium nitride based semiconductor film and semiconductor substrate product
FR2864970B1 (en) * 2004-01-09 2006-03-03 Soitec Silicon On Insulator SUPPORT SUBSTRATE WITH THERMAL EXPANSION COEFFICIENT DETERMINED
EP1709670B1 (en) * 2004-01-26 2012-09-12 Showa Denko K.K. Group iii nitride semiconductor multilayer structure
JP4622720B2 (en) 2004-07-21 2011-02-02 日亜化学工業株式会社 Method for manufacturing nitride semiconductor wafer or nitride semiconductor device
TW200610150A (en) * 2004-08-30 2006-03-16 Kyocera Corp Sapphire baseplate, epitaxial substrate and semiconductor device
US7633097B2 (en) * 2004-09-23 2009-12-15 Philips Lumileds Lighting Company, Llc Growth of III-nitride light emitting devices on textured substrates
US20060175681A1 (en) * 2005-02-08 2006-08-10 Jing Li Method to grow III-nitride materials using no buffer layer
KR20070110041A (en) * 2005-02-21 2007-11-15 미쓰비시 가가꾸 가부시키가이샤 Nitride semiconductor material and method for manufacturing nitride semiconductor crystal
KR100631905B1 (en) * 2005-02-22 2006-10-11 삼성전기주식회사 Nitride single crystal substrate manufacturing method and nitride semiconductor light emitting device manufacturing method using the same
JP4818732B2 (en) * 2005-03-18 2011-11-16 シャープ株式会社 Method of manufacturing nitride semiconductor device
US7422634B2 (en) * 2005-04-07 2008-09-09 Cree, Inc. Three inch silicon carbide wafer with low warp, bow, and TTV
JP2006290677A (en) * 2005-04-11 2006-10-26 Hitachi Cable Ltd Method for manufacturing nitride-based compound semiconductor crystal and method for manufacturing nitride-based compound semiconductor substrate
KR100669142B1 (en) * 2005-04-20 2007-01-15 (주)더리즈 Light emitting element and method for manufacturing thereof
JP4792802B2 (en) * 2005-04-26 2011-10-12 住友電気工業株式会社 Surface treatment method of group III nitride crystal
US7365374B2 (en) * 2005-05-03 2008-04-29 Nitronex Corporation Gallium nitride material structures including substrates and methods associated with the same
JP5283502B2 (en) * 2005-05-11 2013-09-04 ノース・キャロライナ・ステイト・ユニヴァーシティ Polarity controlled group III nitride thin film and method for producing the same
KR100638869B1 (en) * 2005-06-21 2006-10-27 삼성전기주식회사 Method of fabricating nitride type compound layer, gan substrate and vertical structure nitride type semiconductor light emitting device
FR2888402B1 (en) * 2005-07-06 2007-12-21 Commissariat Energie Atomique METHOD FOR ASSEMBLING SUBSTRATES BY DEPOSITING A THIN OXIDE OR NITRIDE BONDING LAYER AND STRUCTURE THUS ASSEMBLED
JP2007059850A (en) * 2005-08-26 2007-03-08 Ngk Insulators Ltd Substrate for depositing group iii nitride, manufacturing method thereof, and semiconductor device using the same
US8334155B2 (en) * 2005-09-27 2012-12-18 Philips Lumileds Lighting Company Llc Substrate for growing a III-V light emitting device
JP4720441B2 (en) * 2005-11-02 2011-07-13 日立電線株式会社 GaN substrate for blue light emitting diode
JP2007242853A (en) * 2006-03-08 2007-09-20 Sanken Electric Co Ltd Semiconductor substrate and semiconductor device using it
JP2007246331A (en) * 2006-03-15 2007-09-27 Hitachi Cable Ltd Group iii-v nitride based semiconductor substrate and method for manufacturing the same
JP2007273590A (en) * 2006-03-30 2007-10-18 Rohm Co Ltd Nitride semiconductor element and its manufacturing method
JP2008010835A (en) 2006-05-31 2008-01-17 Sumitomo Electric Ind Ltd Surface treating method of nitride crystal, nitride crystal substrate, nitride crystal substrate with epitaxial layer, semiconductor device, and manufacturing method of nitride crystal substrate with epitaxial layer and semiconductor device
JP5003033B2 (en) 2006-06-30 2012-08-15 住友電気工業株式会社 GaN thin film bonded substrate and manufacturing method thereof, and GaN-based semiconductor device and manufacturing method thereof
US7585772B2 (en) * 2006-07-26 2009-09-08 Freiberger Compound Materials Gmbh Process for smoothening III-N substrates
US7755103B2 (en) * 2006-08-03 2010-07-13 Sumitomo Electric Industries, Ltd. Nitride gallium semiconductor substrate and nitride semiconductor epitaxial substrate
JP2008127252A (en) * 2006-11-22 2008-06-05 Hitachi Cable Ltd Nitride semiconductor ingot, nitride semiconductor substrate obtained from the same, and method for manufacturing nitride semiconductor ingot
JP5125098B2 (en) * 2006-12-26 2013-01-23 信越半導体株式会社 Manufacturing method of nitride semiconductor free-standing substrate
JP2008166646A (en) * 2007-01-04 2008-07-17 Covalent Materials Corp Method of manufacturing semiconductor substrate
JP4259591B2 (en) 2007-01-16 2009-04-30 住友電気工業株式会社 Group III nitride crystal manufacturing method, group III nitride crystal substrate, and group III nitride semiconductor device
US8163582B2 (en) * 2007-04-23 2012-04-24 Goldeneye, Inc. Method for fabricating a light emitting diode chip including etching by a laser beam
US20090278233A1 (en) 2007-07-26 2009-11-12 Pinnington Thomas Henry Bonded intermediate substrate and method of making same
US20090048659A1 (en) 2007-08-17 2009-02-19 Boston Scientific Scimed, Inc. Medical devices having sol-gel derived ceramic regions with molded submicron surface features
JP5388068B2 (en) * 2007-09-04 2014-01-15 宇部興産株式会社 COMPOSITE SUBSTRATE FOR LIGHT EMITTING ELEMENT FORMATION AND MANUFACTURING METHOD THEREOF
JP5018423B2 (en) 2007-11-20 2012-09-05 住友電気工業株式会社 Group III nitride semiconductor crystal substrate and semiconductor device
WO2009070625A1 (en) 2007-11-27 2009-06-04 Nanocrystal, Llc Ultra-low dislocation density group iii - nitride semiconductor substrates grown via nano-or micro-particle film
JP5276852B2 (en) * 2008-02-08 2013-08-28 昭和電工株式会社 Method for manufacturing group III nitride semiconductor epitaxial substrate
JP2009283785A (en) * 2008-05-23 2009-12-03 Showa Denko Kk Group iii nitride semiconductor laminate structure and manufacturing method thereof
US8395168B2 (en) * 2008-06-06 2013-03-12 Hong Kong Applied Science And Technology Research Institute Co. Ltd. Semiconductor wafers and semiconductor devices with polishing stops and method of making the same
JP5108641B2 (en) 2008-06-12 2012-12-26 住友電気工業株式会社 GaN single crystal substrate, nitride semiconductor epitaxial substrate, and nitride semiconductor device
US20120000415A1 (en) * 2010-06-18 2012-01-05 Soraa, Inc. Large Area Nitride Crystal and Method for Making It
JP4631946B2 (en) * 2008-08-11 2011-02-16 住友電気工業株式会社 Group III nitride semiconductor layer bonded substrate manufacturing method
JP5465469B2 (en) * 2008-09-04 2014-04-09 日本碍子株式会社 Epitaxial substrate, semiconductor device substrate, and HEMT element
JPWO2010032423A1 (en) * 2008-09-16 2012-02-02 昭和電工株式会社 Method for manufacturing group III nitride semiconductor light emitting device, group III nitride semiconductor light emitting device and lamp, and method for reducing variation in emission wavelength distribution of group III nitride semiconductor light emitting device wafer
WO2010038740A1 (en) * 2008-10-03 2010-04-08 昭和電工株式会社 Method for manufacturing semiconductor light-emitting element
JP2010109015A (en) * 2008-10-28 2010-05-13 Panasonic Electric Works Co Ltd Method of manufacturing semiconductor light-emitting element
JP5453780B2 (en) * 2008-11-20 2014-03-26 三菱化学株式会社 Nitride semiconductor
JP2010157604A (en) * 2008-12-26 2010-07-15 Showa Denko Kk Method of manufacturing semiconductor light-emitting element
JP2010180081A (en) * 2009-02-04 2010-08-19 Sumitomo Electric Ind Ltd GaN SUBSTRATE, PRODUCTION METHOD THEREOF, PRODUCTION METHOD OF GaN LAYER-BONDED SUBSTRATE, AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE
JP5407385B2 (en) 2009-02-06 2014-02-05 住友電気工業株式会社 Composite substrate, epitaxial substrate, semiconductor device and composite substrate manufacturing method
JP2010232625A (en) * 2009-03-03 2010-10-14 Sumitomo Electric Ind Ltd Method of manufacturing laminated substrate
FR2942911B1 (en) 2009-03-09 2011-05-13 Soitec Silicon On Insulator METHOD FOR PRODUCING A HETEROSTRUCTURE WITH LOCAL ADAPTATION OF THERMAL EXPANSION COEFFICIENT
JP2010232609A (en) 2009-03-30 2010-10-14 Hitachi Cable Ltd Group-iii nitride semiconductor composite substrate, group-iii nitride semiconductor substrate, and method of manufacturing group-iii nitride semiconductor composite substrate
JP5071427B2 (en) * 2009-04-13 2012-11-14 日立電線株式会社 Nitride semiconductor substrate
JP2009182341A (en) 2009-05-07 2009-08-13 Sumitomo Electric Ind Ltd PRESERVATION METHOD OF GaN SUBSTRATE, PRESERVED SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR THEM
JP2010269970A (en) 2009-05-21 2010-12-02 Hitachi Cable Ltd Nitride semiconductor substrate
FR2947098A1 (en) * 2009-06-18 2010-12-24 Commissariat Energie Atomique METHOD OF TRANSFERRING A THIN LAYER TO A TARGET SUBSTRATE HAVING A THERMAL EXPANSION COEFFICIENT DIFFERENT FROM THAT OF THE THIN LAYER
US20110057213A1 (en) * 2009-09-08 2011-03-10 Koninklijke Philips Electronics N.V. Iii-nitride light emitting device with curvat1jre control layer
JP2011061084A (en) 2009-09-11 2011-03-24 Sumitomo Electric Ind Ltd Method for manufacturing laminated substrate
JP5866088B2 (en) 2009-11-24 2016-02-17 株式会社半導体エネルギー研究所 Method for manufacturing SOI substrate
FR2953328B1 (en) * 2009-12-01 2012-03-30 S O I Tec Silicon On Insulator Tech HETEROSTRUCTURE FOR ELECTRONIC POWER COMPONENTS, OPTOELECTRONIC OR PHOTOVOLTAIC COMPONENTS
US8187901B2 (en) * 2009-12-07 2012-05-29 Micron Technology, Inc. Epitaxial formation support structures and associated methods
EP2942823B1 (en) 2009-12-09 2021-05-05 LG Innotek Co., Ltd. Light emitting device, light emitting package, and lighting system
KR101749781B1 (en) * 2010-01-15 2017-06-21 미쓰비시 가가꾸 가부시키가이샤 Single-crystal substrate, group ⅲ element nitride crystal obtained using same, and process for producing group ⅲ element nitride crystal
US20110177638A1 (en) * 2010-01-15 2011-07-21 Koninklijke Philips Electronics N.V. Semiconductor light emitting device with curvature control layer
KR20110099103A (en) 2010-02-01 2011-09-06 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 Manufacturing method of nitride-based compound semiconductor substrate and nitride-based compound semiconductor free-standing substrate
TWI525664B (en) * 2010-03-05 2016-03-11 Namiki Precision Jewel Co Ltd A crystalline film, a device, and a method for producing a crystalline film or device
US8592292B2 (en) * 2010-09-02 2013-11-26 National Semiconductor Corporation Growth of multi-layer group III-nitride buffers on large-area silicon substrates and other substrates
KR20120032329A (en) * 2010-09-28 2012-04-05 삼성전자주식회사 Semiconductor device
US8765509B2 (en) * 2010-09-30 2014-07-01 Toyoda Gosei Co., Ltd. Method for producing group III nitride semiconductor light-emitting device
US20120118222A1 (en) * 2010-11-15 2012-05-17 Sumitomo Electric Industries, Ltd. METHOD OF MANUFACTURING GaN-BASED FILM
JP5938871B2 (en) * 2010-11-15 2016-06-22 住友電気工業株式会社 Manufacturing method of GaN-based film
US8697564B2 (en) * 2010-11-16 2014-04-15 Sumitomo Electric Industries, Ltd. Method of manufacturing GaN-based film
JP5681937B2 (en) 2010-11-25 2015-03-11 株式会社パウデック Semiconductor device and manufacturing method thereof
JP6018360B2 (en) * 2010-12-02 2016-11-02 富士通株式会社 Compound semiconductor device and manufacturing method thereof
JP2012124257A (en) * 2010-12-07 2012-06-28 Toshiba Corp Semiconductor light-emitting element and method of manufacturing the same
JP5752933B2 (en) * 2010-12-17 2015-07-22 株式会社ディスコ Processing method of optical device wafer
CN102157638A (en) * 2011-01-31 2011-08-17 杭州士兰明芯科技有限公司 Method for preparing substrate for epitaxial growth of GaN
US9082948B2 (en) 2011-02-03 2015-07-14 Soitec Methods of fabricating semiconductor structures using thermal spray processes, and semiconductor structures fabricated using such methods
JP2012204540A (en) * 2011-03-24 2012-10-22 Toshiba Corp Semiconductor device and method of manufacturing the same
US9236530B2 (en) * 2011-04-01 2016-01-12 Soraa, Inc. Miscut bulk substrates
JP2012230969A (en) 2011-04-25 2012-11-22 Sumitomo Electric Ind Ltd GaN-BASED SEMICONDUCTOR DEVICE MANUFACTURING METHOD
FR2975222A1 (en) * 2011-05-10 2012-11-16 Soitec Silicon On Insulator PROCESS FOR PRODUCING A SEMICONDUCTOR SUBSTRATE
JP2012243792A (en) 2011-05-16 2012-12-10 Sumitomo Electric Ind Ltd GaN THIN FILM BONDED SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND GaN-BASED HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
US8906727B2 (en) 2011-06-16 2014-12-09 Varian Semiconductor Equipment Associates, Inc. Heteroepitaxial growth using ion implantation
JP5799604B2 (en) * 2011-06-21 2015-10-28 住友電気工業株式会社 Semiconductor device
JP6011340B2 (en) 2011-08-05 2016-10-19 住友電気工業株式会社 Substrate, semiconductor device and manufacturing method thereof
CN102304760A (en) * 2011-08-12 2012-01-04 青岛铝镓光电半导体有限公司 Composite substrate, preparation method of composite substrate and method for preparing single crystal thick film through hetero-epitaxy
US20130082274A1 (en) 2011-09-29 2013-04-04 Bridgelux, Inc. Light emitting devices having dislocation density maintaining buffer layers
US9012921B2 (en) 2011-09-29 2015-04-21 Kabushiki Kaisha Toshiba Light emitting devices having light coupling layers
US8962365B2 (en) * 2011-10-07 2015-02-24 Sumitomo Electric Industies, Ltd. Method of manufacturing GaN-based film and composite substrate used therefor
US9105792B2 (en) * 2011-10-10 2015-08-11 Sensor Electronic Technology, Inc. Patterned layer design for group III nitride layer growth
TWI563539B (en) * 2012-01-18 2016-12-21 Sino American Silicon Prod Inc Composite substrate, manufacturing method thereof and light emitting device having the same
CN102560676B (en) * 2012-01-18 2014-08-06 山东大学 Method for performing GaN single crystal growth by using thinned and bonded structure
US9165766B2 (en) * 2012-02-03 2015-10-20 Transphorm Inc. Buffer layer structures suited for III-nitride devices with foreign substrates
JP5874495B2 (en) * 2012-03-29 2016-03-02 豊田合成株式会社 Method for producing group III nitride semiconductor containing Ga
US8728938B2 (en) * 2012-06-13 2014-05-20 Ostendo Technologies, Inc. Method for substrate pretreatment to achieve high-quality III-nitride epitaxy
JP2014009156A (en) * 2012-06-29 2014-01-20 Samsung Corning Precision Materials Co Ltd Method for producing gallium nitride substrate and gallium nitride substrate produced thereby
DE102012109460B4 (en) * 2012-10-04 2024-03-07 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Method for producing a light-emitting diode display and light-emitting diode display
US20140097442A1 (en) * 2012-10-09 2014-04-10 Industrial Technology Research Institute Nitride semiconductor device
US9917004B2 (en) 2012-10-12 2018-03-13 Sumitomo Electric Industries, Ltd. Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
US9136337B2 (en) 2012-10-12 2015-09-15 Sumitomo Electric Industries, Ltd. Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same
TWI529964B (en) * 2012-12-31 2016-04-11 聖戈班晶體探測器公司 Group iii-v substrate material with thin buffer layer and methods of making
CN104995713A (en) * 2013-02-18 2015-10-21 住友电气工业株式会社 Group iii-nitride composite substrate and method of producing same, layered group iii-nitride composite substrate, as well as group iii-nitride semiconductor device and method of producing same
KR102036110B1 (en) * 2013-02-22 2019-10-24 엘지전자 주식회사 Growing substrate having heterostructure, nitride semiconductor device and method for manufacturing the same
EP2779213B1 (en) * 2013-03-12 2015-05-06 Siltronic AG Semiconductor wafer with a layer of AlzGa1-zN and process for producing it
WO2015053127A1 (en) 2013-10-10 2015-04-16 住友電気工業株式会社 Group-iii-nitride composite substrate, production method therefor, laminated group-iii-nitride composite substrate, and group-iii-nitride semiconductor device and production method therefor
JP6176069B2 (en) * 2013-11-13 2017-08-09 住友電気工業株式会社 Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, group III nitride semiconductor device and method for manufacturing the same

Patent Citations (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5406123A (en) * 1992-06-11 1995-04-11 Engineering Research Ctr., North Carolina State Univ. Single crystal titanium nitride epitaxial on silicon
JPH09219540A (en) * 1996-02-07 1997-08-19 Rikagaku Kenkyusho Forming method of gan thin film
US20040072410A1 (en) * 1997-10-30 2004-04-15 Kensaku Motoki GaN single crystal substrate and method of making the same
US6413627B1 (en) * 1998-06-18 2002-07-02 Sumitomo Electric Industries, Ltd. GaN single crystal substrate and method of producing same
US6521514B1 (en) * 1999-11-17 2003-02-18 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates
US20110108886A1 (en) * 2000-08-04 2011-05-12 The Regents Of The University Of California Method of controlling stress in group-iii nitride films deposited on substrates
US6673149B1 (en) * 2000-09-06 2004-01-06 Matsushita Electric Industrial Co., Ltd Production of low defect, crack-free epitaxial films on a thermally and/or lattice mismatched substrate
US6391748B1 (en) * 2000-10-03 2002-05-21 Texas Tech University Method of epitaxial growth of high quality nitride layers on silicon substrates
US6989202B2 (en) * 2000-11-21 2006-01-24 Ngk Insulators, Ltd. Method for fabricating a III nitride film, an underlayer for fabricating a III nitride film and a method for fabricating the same underlayer
US6617060B2 (en) * 2000-12-14 2003-09-09 Nitronex Corporation Gallium nitride materials and methods
JP2002319545A (en) * 2001-04-20 2002-10-31 Mitsubishi Cable Ind Ltd MANUFACTURING METHOD OF GaN CRYSTAL AND BASE MATERIAL FOR CRYSTAL GROWTH
US20070158785A1 (en) * 2002-12-27 2007-07-12 General Electric Company Gallium nitride crystals and wafers and method of making
KR20040078211A (en) * 2003-03-03 2004-09-10 엘지전자 주식회사 Method for manufacturing GaN substrate
US20040232440A1 (en) * 2003-05-21 2004-11-25 Sanken Electric Co., Ltd. Compound semiconductor substrates and method of fabrication
US20050124161A1 (en) * 2003-10-23 2005-06-09 Rawdanowicz Thomas A. Growth and integration of epitaxial gallium nitride films with silicon-based devices
US7803717B2 (en) * 2003-10-23 2010-09-28 North Carolina State University Growth and integration of epitaxial gallium nitride films with silicon-based devices
US20050103257A1 (en) * 2003-11-13 2005-05-19 Xueping Xu Large area, uniformly low dislocation density GaN substrate and process for making the same
US20070164306A1 (en) * 2004-05-18 2007-07-19 Sumitomo Electric Industries, Ltd. Group III nitride semiconductor crystal and method of its manufacture, group III nitride semiconductor device and method of its manufacture, and light-emitting appliance
US20060046331A1 (en) * 2004-09-01 2006-03-02 Sumitomo Electric Industries, Ltd. Epitaxial substrate and semiconductor element
US20110018003A1 (en) * 2005-01-11 2011-01-27 Sumitomo Electric Industries, Ltd. Group iii nitride semiconductor substrate and manufacturing method thereof
JP2006210660A (en) * 2005-01-28 2006-08-10 Hitachi Cable Ltd Manufacturing method of semiconductor substrate
US20080315209A1 (en) * 2005-04-26 2008-12-25 Sumitomo Electric Industries, Ltd. Group III Nitride Semiconductor Device and Epitaxial Substrate
US20060267043A1 (en) * 2005-05-27 2006-11-30 Emerson David T Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
US20060278891A1 (en) * 2005-06-10 2006-12-14 Saxler Adam W Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates
US20070051969A1 (en) * 2005-09-06 2007-03-08 Hitachi Cable, Ltd. Group III-V nitride-based semiconductor substrate and method of making same
US20070141823A1 (en) * 2005-12-12 2007-06-21 Kyma Technologies, Inc. Inclusion-free uniform semi-insulating group III nitride substrates and methods for making same
US20100025228A1 (en) * 2006-12-19 2010-02-04 Tauzin Aurelie Method for Preparing Thin GaN Layers by Implantation and Recycling of a Starting Substrate
KR20080065792A (en) * 2007-01-10 2008-07-15 삼성코닝정밀유리 주식회사 Gallium nitride substrate and method of manufacturing the same
US20080296584A1 (en) * 2007-05-30 2008-12-04 Sumitomo Electric Industries, Ltd. III-V Nitride Semiconductor Layer-Bonded Substrate and Semiconductor Device
US20090155987A1 (en) * 2007-12-18 2009-06-18 Samsung Corning Precision Glass Co., Ltd. Method of fabricating gallium nitride substrate
KR20090065860A (en) * 2007-12-18 2009-06-23 삼성코닝정밀유리 주식회사 Fabricating method for gallium nitride wafer
US20110298009A1 (en) * 2008-11-27 2011-12-08 Dowa Electronics Materials Co., Ltd. Epitaxial substrate for electronic device and method of producing the same
US20110272734A1 (en) * 2009-01-16 2011-11-10 Sumitomo Electric Industries, Ltd. Light-Emitting Device Substrate
US20110121311A1 (en) * 2009-01-23 2011-05-26 Sumitomo Electric Industries, Ltd. Method for manufacturing semiconductor substrate, method for manufacturing semiconductor device, semiconductor substrate, and semiconductor device
US20120070929A1 (en) * 2009-04-30 2012-03-22 Koha Co., Ltd. Method for fabricating wafer product and method for fabricating gallium nitride based semiconductor optical device
US20110101502A1 (en) * 2009-11-05 2011-05-05 Fairfield Crystal Technology, Llc Composite wafers and substrates for iii-nitride epitaxy and devices and methods therefor
US20130149492A1 (en) * 2010-08-20 2013-06-13 Kyung Byung Yoon Porous thin film having holes and a production method therefor
US20130032928A1 (en) * 2010-11-12 2013-02-07 Sumitomo Electric Industries, Ltd. Group iii nitride composite substrate
US20130285067A1 (en) * 2010-11-18 2013-10-31 Jean-Marc BETHOUX Method for forming a buried metal layer structure
US20120174855A1 (en) * 2011-01-12 2012-07-12 Hon Hai Precision Industry Co., Ltd. Method for making epitaxial structure
US20130316507A1 (en) * 2011-01-25 2013-11-28 Sumitomo Electric Industries, Ltd. Method for manufacturing nitride semiconductor element
US20120305066A1 (en) * 2011-06-06 2012-12-06 International Business Machines Corporation Use of metal phosphorus in metallization of photovoltaic devices and method of fabricating same
US20130260093A1 (en) * 2012-03-28 2013-10-03 Yang Wei Epitaxial base
US9312165B2 (en) * 2013-02-08 2016-04-12 Sumitomo Electric Industries, Ltd. Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
US20140342127A1 (en) * 2013-05-15 2014-11-20 International Business Machines Corporation Formation of large scale single crystalline graphene

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Machine Translation of KR 20090065860 A, 06/2009 *

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9917004B2 (en) 2012-10-12 2018-03-13 Sumitomo Electric Industries, Ltd. Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
US11094537B2 (en) * 2012-10-12 2021-08-17 Sumitomo Electric Industries, Ltd. Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
US10600676B2 (en) 2012-10-12 2020-03-24 Sumitomo Electric Industries, Ltd. Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
US10186451B2 (en) 2013-02-08 2019-01-22 Sumitomo Electric Industries, Ltd. Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
US9923063B2 (en) 2013-02-18 2018-03-20 Sumitomo Electric Industries, Ltd. Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same
US20160351750A1 (en) * 2014-05-21 2016-12-01 Xiamen Sanan Optoelectronics Technology Co., Ltd. Fabrication Method of Nitride Light Emitting Diodes
US20160365438A1 (en) * 2015-06-15 2016-12-15 Fuji Electric Co., Ltd. Method of manufacturing nitride semiconductor device and nitride semiconductor device
US9815019B1 (en) * 2015-10-22 2017-11-14 King Fahd University Of Petroleum And Minerals Gas separation device with nanocomposite membrane
US20170348633A1 (en) * 2015-10-22 2017-12-07 King Fahd University Of Petroleum And Minerals Gas separation device with nanocomposite membrane
US10340886B2 (en) * 2016-03-22 2019-07-02 Sumitomo Electric Industries, Ltd. Ceramic substrate, layered body, and saw device
US20190206686A1 (en) * 2016-08-18 2019-07-04 Tokai Carbon Korea Co., Ltd. Component for fabricating sic semiconductor, having plurality of layers having different transmittances, and method for manufacturing same
US10290489B2 (en) * 2016-10-21 2019-05-14 Sciocs Company Limited Method for manufacturing group-III nitride substrate and group-III nitride substrate
US10600645B2 (en) * 2016-12-15 2020-03-24 Samsung Electronics Co., Ltd. Manufacturing method of gallium nitride substrate
US20180174823A1 (en) * 2016-12-15 2018-06-21 Samsung Electronics Co., Ltd. Manufacturing method of gallium nitride substrate
US20190074405A1 (en) * 2017-09-07 2019-03-07 Toyoda Gosei Co., Ltd. Production method for group iii nitride semiconductor
US10700235B2 (en) * 2017-09-07 2020-06-30 Toyoda Gosei Co., Ltd. Production method for group III nitride semiconductor
US10971374B2 (en) * 2017-09-21 2021-04-06 Sumitomo Electric Industries, Ltd. Semi-insulating compound semiconductor substrate and semi-insulating compound semiconductor single crystal

Also Published As

Publication number Publication date
CN108281378B (en) 2022-06-24
EP2908330B1 (en) 2021-05-19
TWI646635B (en) 2019-01-01
CN104641453B (en) 2018-03-30
EP2908330A4 (en) 2016-06-01
US11094537B2 (en) 2021-08-17
TW201820548A (en) 2018-06-01
CN108281378A (en) 2018-07-13
TW201417148A (en) 2014-05-01
US20200176305A1 (en) 2020-06-04
US10600676B2 (en) 2020-03-24
EP2908330A1 (en) 2015-08-19
CN104641453A (en) 2015-05-20
WO2014057748A1 (en) 2014-04-17
TWI644346B (en) 2018-12-11
US20180166325A1 (en) 2018-06-14
US9917004B2 (en) 2018-03-13

Similar Documents

Publication Publication Date Title
US11094537B2 (en) Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
US9136337B2 (en) Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same
US9923063B2 (en) Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same
JP5407385B2 (en) Composite substrate, epitaxial substrate, semiconductor device and composite substrate manufacturing method
US9312340B2 (en) Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same
US10186451B2 (en) Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
JP6135441B2 (en) Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, group III nitride semiconductor device and method for manufacturing the same
WO2015053127A1 (en) Group-iii-nitride composite substrate, production method therefor, laminated group-iii-nitride composite substrate, and group-iii-nitride semiconductor device and production method therefor
JP6146042B2 (en) Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, group III nitride semiconductor device and method for manufacturing the same
JP5682651B2 (en) Semiconductor device and manufacturing method thereof
JP2014157983A (en) Group iii nitride composite substrate, method for manufacturing the same, lamination group iii nitride composite substrate, group iii nitride semiconductor device and method for manufacturing the same
JP6248395B2 (en) Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, group III nitride semiconductor device and method for manufacturing the same
JP2014157979A (en) Group iii nitride composite substrate, method for manufacturing the same, lamination group iii nitride composite substrate, group iii nitride semiconductor device and method for manufacturing the same
JP6146041B2 (en) Group III nitride composite substrate, laminated group III nitride composite substrate, group III nitride semiconductor device, and manufacturing method thereof
JP2016048712A (en) Semiconductor device manufacturing method

Legal Events

Date Code Title Description
AS Assignment

Owner name: SUMITOMO ELECTRIC INDUSTRIES, LTD., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:ISHIBASHI, KEIJI;HACHIGO, AKIHIRO;HIROMURA, YUKI;AND OTHERS;SIGNING DATES FROM 20141210 TO 20141224;REEL/FRAME:034876/0153

STCF Information on status: patent grant

Free format text: PATENTED CASE

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 4