US20150249180A1 - Semiconductor light emitting element and method for manufacturing same - Google Patents
Semiconductor light emitting element and method for manufacturing same Download PDFInfo
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- US20150249180A1 US20150249180A1 US14/699,088 US201514699088A US2015249180A1 US 20150249180 A1 US20150249180 A1 US 20150249180A1 US 201514699088 A US201514699088 A US 201514699088A US 2015249180 A1 US2015249180 A1 US 2015249180A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
Definitions
- Embodiments described herein relate generally to a semiconductor light emitting element and a method for manufacturing same.
- a metal reflection layer can be provided below the light emitting layer. Then, the emission light directed downward from the light emitting layer is reflected. This increases the upward light extraction efficiency and facilitates increasing the brightness.
- a silicon (Si) substrate can be wafer bonded to a semiconductor substrate including the light emitting layer. Then, the crystal growth substrate can be removed to form a thin film multilayer light emitting element. This facilitates increasing the volume productivity.
- the reflectance of a metal film decreases as the wavelength of visible light becomes shorter.
- the light reflectance of a stable electrode metal such as Au, Pt, and Pd decreases to 60% or less at 450 nm. This makes it difficult to achieve high light extraction efficiency.
- the light reflectance of Ag and Al can be made as high as 90% or more at 450 nm.
- Ag and Al are prone to migration and cause the problem of decreased reliability.
- FIG. 1A is a schematic plan view of a semiconductor light emitting element according to a first embodiment, and FIG. 1B is a schematic sectional view taken along line A-A;
- FIGS. 2A to 2F are process sectional views of a method for manufacturing a semiconductor light emitting element according to the first embodiment
- FIG. 3A is a graph showing the distribution of Ag content ratio of the reflection layer before heat treatment
- FIG. 3B is a graph showing the distribution of Ag content ratio of the reflection layer after heat treatment
- FIG. 4 is a schematic sectional view of a semiconductor light emitting element according to a comparative example
- FIGS. 5A to 5E are process sectional views of a method for manufacturing a semiconductor light emitting element according to a variation of the first embodiment
- FIG. 6A is a graph showing the distribution of Ag content ratio of the reflection layer 44 before heat treatment of the semiconductor light emitting element according to the variation
- FIG. 6B is a graph showing the distribution of Ag content ratio of the reflection layer 44 after heat treatment
- FIG. 7 is a schematic sectional view of a semiconductor light emitting element according to a second embodiment
- FIG. 8 is a graph showing the dependence of the reflectance of metals on the wavelength
- FIG. 9 is a schematic sectional view of a semiconductor light emitting element according to a third embodiment.
- FIGS. 10A to 10F are process sectional views of a method for manufacturing a semiconductor light emitting element according to the third embodiment
- FIG. 11 is a schematic sectional view of a variation according to the third embodiment.
- FIG. 12 is a schematic sectional view of a semiconductor light emitting element wafer according to a comparative example.
- a light emitting element includes a semiconductor stacked body including a light emitting layer, a reflection layer, a support substrate, a first bonding electrode and a second bonding electrode.
- the reflection layer is made of a metal and has a first surface and a second surface opposite to the first surface.
- the semiconductor stacked body is provided on a side of the first surface of the reflection layer.
- the first bonding electrode is provided between the second surface and the support substrate and includes a convex portion projected toward the support substrate and a bottom portion provided around the convex portion in plan view.
- the second bonding electrode includes a concave portion fitted in the convex portion of the first bonding electrode and is capable of bonding the support substrate and the first bonding electrode.
- FIG. 1A is a schematic plan view of a semiconductor light emitting element according to a first embodiment.
- FIG. 1B is a schematic sectional view taken along line A-A.
- the semiconductor light emitting element includes a semiconductor stacked body 30 including a light emitting layer 22 capable of emitting emission light, a reflection layer 44 provided on a first surface 30 a side of the semiconductor stacked body 30 , a first bonding electrode 48 , a support substrate 10 made of e.g. conductive Si or Ge, and a second bonding electrode 12 provided on the support substrate 10 . Between the semiconductor stacked body 30 and the reflection layer 44 , a transparent conductive film 42 may be provided.
- the semiconductor stacked body 30 includes an InGaAlP-based material represented by the composition formula In x (Ga y Al 1-y ) 1-x P (where 0 ⁇ x ⁇ 1 , 0 ⁇ y ⁇ 1) or an AlGaAs-based material represented by the composition formula Al x Ga 1-x As (0 ⁇ x ⁇ 0.6).
- the reflection layer 44 includes an interior region 44 b provided at the center and an exterior region 44 a provided around the interior region 44 b in plan view.
- the exterior region 44 a is provided so as to surround the interior region 44 b in plan view.
- the thickness T 2 (after alloying) of the exterior region 44 a is smaller than the thickness T 1 (after alloying) of the interior region 44 b .
- the first surface 44 c of the reflection layer 44 reflects emission light.
- the semiconductor stacked body 30 is in direct contact with the reflection layer 44 made of Au or Ag, an alloy layer may be formed and increase the optical loss. If a transparent conductive film 42 is provided between the semiconductor stacked body 30 and the reflection layer 44 , an alloy layer is less likely to be formed between the semiconductor stacked body 30 and the transparent conductive film 42 . Thus, the optical loss can be reduced, and hence this is more preferable.
- the first bonding electrode 48 is provided so as to cover the step difference T 3 of the second surface 44 d of the reflection layer 44 . That is, the first bonding electrode 48 includes a convex portion 48 e provided on the interior region 44 b of the reflection layer 44 , and a bottom portion 48 f provided on the exterior region 44 a around the interior region 44 b . As a result, a step difference T 4 occurs in the first bonding electrode 48 .
- the second bonding electrode 12 can be made of a metal solder material. By melting the metal solder material, the first bonding electrode 48 can be bonded to the support substrate 10 while filling the step difference T 4 of the first bonding electrode 48 .
- the second bonding electrode 12 includes a concave portion fitted in the convex portion 48 e of the first bonding electrode 48 .
- the adhesive strength between the wafers can be increased.
- a second electrode 62 is provided on the back surface of the conductive support substrate 10 .
- the semiconductor stacked body 30 is made of an InGaAlP-based material.
- the light emitting layer 22 can emit light in the wavelength range from green to red.
- the semiconductor stacked body 30 includes, from the transparent conductive film 42 side, a contact layer 26 of the second conductivity type, a second layer 24 of the second conductivity type, a light emitting layer 22 , and a first layer 20 of the first conductivity type in this order.
- an insulating layer 40 having an opening 40 a and made of e.g. SiO 2 or Si 3 N 4 may be provided.
- the current is blocked by the insulating layer 40 , and flows through the opening 40 a between the first electrode 60 and the first bonding electrode 48 .
- the light emitting region ER above the opening 40 a emits light.
- the light G 1 directed upward from the light emitting region ER, and the light G 2 directed downward from the light emitting region ER and reflected by the reflection layer 44 can be extracted upward.
- the second bonding electrode 12 can be made of a metal solder material provided on the support substrate 10 .
- Ti/Pt/Au or Cr/Au may be provided, and the second bonding electrode 12 may be provided thereon.
- the melted metal solder material bonds the first bonding electrode 48 to the support substrate 10 while filling the step difference T 4 .
- the surface of the second bonding electrode 12 is made of Au
- the surface of the first bonding electrode 48 can also be made of Au.
- the interior region 44 b is rectangular.
- the shape is not limited thereto, but may be e.g. circular.
- FIGS. 2A to 2F are process sectional views of a method for manufacturing a semiconductor light emitting element according to the first embodiment.
- FIGS. 2A to 2F show the end portion OR (dashed line) in FIG. 1B .
- a semiconductor stacked body 30 is formed on a crystal growth substrate 50 .
- the crystal growth substrate 50 is made of GaAs.
- the semiconductor stacked body 30 includes, from the crystal growth substrate 50 side, a first layer 20 of the first conductivity type, a light emitting layer 22 , a second layer 24 of the second conductivity type, and a contact layer 26 made of GaP of the second conductivity type having low optical loss.
- the first layer 20 and the second layer 24 can include cladding layers for sandwiching the light emitting layer 22 on both sides to confine light in the vertical direction.
- an insulating layer 40 made of e.g. SiO 2 or Si 3 N 4 is formed on the contact layer 26 .
- the thickness of the insulating layer 40 is preferably in the range of e.g. 50-200 nm.
- the insulating layer 40 is provided with an opening, although not shown in the end portion OR.
- a transparent conductive film 42 made of e.g. ITO (indium tin oxide), zinc oxide, or tin oxide is provided so as to cover the insulating layer 40 and the contact layer 26 exposed in its opening.
- the transparent conductive film 42 absorbs part of visible light.
- the transparent conductive film 42 is preferably made as thin as e.g. 50-200 nm to the extent that alloying between the semiconductor stacked body 30 and the reflection layer 44 can be suppressed.
- a first film 45 made of a first metal is formed on the second surface 42 b of the transparent conductive film 42 .
- the first metal is e.g. Ag, Ag alloy, or Al.
- the thickness of the first film 45 is preferably made thin, such as in the range of 50-400 nm, to the extent that the reflectance can be kept high.
- the first film 45 is patterned using a photoresist.
- a photoresist In the case of Ag, for instance, a wet etching method with phosphoric acid or a dry etching method can be used.
- a second film 46 made of a second metal is formed so as to cover the upper surface of the patterned first film 45 and the region of the transparent conductive film 42 where the first film 45 has been removed.
- the second metal is Au, but may also be made of e.g. Pd or Pt.
- the contact strength between the second film 46 and the transparent conductive film 42 can be made higher than the contact strength between the first film 45 and the transparent conductive film 42 . This facilitates keeping high adhesive strength required for e.g. the dicing process.
- a first bonding electrode 48 is formed on the second film 46 .
- the first bonding electrode 48 includes, e.g. from the second film 46 side, a barrier metal such as titanium (Ti) 48 a and platinum (Pt) 48 b , and a metal such as gold (Au) 48 c in this order.
- a barrier metal such as titanium (Ti) 48 a and platinum (Pt) 48 b
- a metal such as gold (Au) 48 c in this order.
- the barrier metal for instance, tungsten/nickel (W/Ni) can also be used.
- the first bonding electrode 48 does not need a patterning process. This can simplify the manufacturing process. More specifically, the number of times of the photolithography process and patterning process can be reduced, and a manufacturing method with high productivity can be realized.
- the first bonding electrode 48 includes a convex portion 48 e on the interior region 44 b , and a bottom portion 48 f on the exterior region 44 a.
- a second bonding electrode 12 made of e.g. a metal solder material is formed on a support substrate 10 .
- the metal solder material can be e.g. a eutectic such as AuIn, AuSn (eutectic temperature being approximately 280° C.), AuGe (eutectic temperature being approximately 350° C.), AuSi (eutectic temperature being approximately 380° C.), or In. Its thickness can be set to e.g. 1-5 ⁇ m.
- the first bonding electrode 48 and the second bonding electrode 12 are stacked and pressurized, and heated to higher than or equal to the melting point of the metal solder material.
- the melting point of the metal solder material can be set to within the temperature range of e.g. 150-400° C. depending on its material.
- the melted metal solder material fills the step difference T 4 of the first bonding electrode 48 to provide gapless wafer bonding. This can increase the adhesive strength between the support substrate 10 and the semiconductor stacked body 30 .
- the step difference T 4 is measured between the surface of the convex portion 48 e and the surface of the bottom portion 48 f near the outer edge portion.
- alloying may easily proceed from the neighborhood of the interface between the first film 45 and the second film 46 .
- the composition ratio of alloying can be controlled.
- the bonding strength between the first film 45 and the second film 46 can be increased.
- the transparent conductive film 42 side of the interior region 44 b is constituted by the first film 45 .
- FIG. 3A is a graph showing the distribution of Ag content ratio of the reflection layer before heat treatment.
- FIG. 3B is a graph showing the distribution of Ag content ratio of the reflection layer after heat treatment.
- the vertical axis represents the Ag content ratio (at %, percentage in the number of atoms) of the interior region 44 b .
- the horizontal axis represents position in the wafer depth direction.
- the heat treatment process may be either a wafer bonding process or another process.
- FIG. 3A shows the distribution of Ag content ratio in the wafer depth direction along line B-B of FIG. 2E .
- the first film 45 is made of 100% Ag
- the second film 46 is made of 0% Ag.
- FIG. 3B shows the distribution of Ag content ratio along line B-B of FIG. 2F .
- the thickness of the first film (Ag) 45 is larger than the thickness of the second film (Au) 46 .
- Au also penetrates into Ag.
- the Ag content ratio is set to remain 95% or more.
- FIG. 1A even if the width of the exterior region 44 a is made sufficiently smaller than the width of the interior region 44 b , migration of Ag can be suppressed.
- the thickness of the first film 45 made of Ag was set to approximately 20 times the thickness of the second film 46 made of Au.
- wafer bonding was performed at 350° C.
- the Ag content ratio of the interior region 44 b in contact with the transparent conductive film 42 was successfully made 95 at % or more.
- the decrease from the light reflectance of Ag can be set to 2% or less. That is, for instance, the thickness of the first film 45 made of Ag can be set to approximately 200 nm, and the thickness of the second film 46 made of Au can be set to approximately 10 nm.
- the exterior region 44 a Into the exterior region 44 a , Ag is diffused primarily laterally to form an alloy layer. Even after alloying by diffusion of Ag, the light reflectance of the exterior region 44 a , which was an Au film before alloying, is lower than the light reflectance of the interior region 44 b at the surface in contact with the transparent conductive film 42 .
- the crystal growth substrate 50 is removed.
- a mixed solution of ammonia and hydrogen peroxide can be used.
- the removal process is not limited thereto.
- a process for separation into chips is performed. This can prevent the first metal from being exposed at the side surface of the chip. Thus, short circuit of the pn junction due to migration of e.g. Ag, and the sulfurization of Ag, for instance, can be suppressed. Hence, the reliability can be improved.
- FIG. 4 is a schematic sectional view of a semiconductor light emitting element according to a comparative example.
- the semiconductor stacked body 130 includes a light emitting layer 122 and is made of an InAlGaP-based material. Below the semiconductor stacked body 130 , an insulating film 140 is provided. In an opening 140 a provided in the insulating film 140 , the semiconductor stacked body 130 is in contact with a transparent conductive film 142 . On the central region of the lower surface of the transparent conductive film 142 , an Ag film 144 is provided. Furthermore, on the lower surface of the transparent conductive film 142 in the exterior region, an Au film 145 thicker than the Ag film 144 is provided. A bonding electrode 112 made of a barrier metal such as Ti and Pt is provided so as to cover the surface of the Ag film 144 and the surface of the Au film 145 . The Si substrate 110 and the bonding electrode 112 are bonded with an AuIn-based alloy solder.
- the reflectance of Ag and Al is higher than that of Au. Hence, the emission light directed downward from the light emitting region above the opening 140 a is efficiently reflected upward.
- Ag and Al are prone to migration.
- Ag or Al extends to the end surface of the element, Ag particles having migrated causes e.g. short circuit of the pn junction.
- the thick Au film 145 can suppress this migration of Ag.
- the process for patterning the Ag film 144 and the process for patterning the Au film 145 are each needed.
- a gap 150 is likely to occur at the boundary between the Ag film 144 and the Au film 145 .
- the adhesive strength of Ag or Ag alloy with the transparent conductive film 142 is not sufficient. Thus, from the neighborhood of the gap 150 , peeling of the Ag film 144 is likely to occur.
- the second film 46 is provided so as to gaplessly cover the front surface and side surface of the first film 45 and the surface of the transparent conductive film 42 .
- the process for patterning the second film 46 is not needed.
- the second film 46 and the first bonding electrode 48 can be formed by a continuous process. This can reduce the number of times of the metal film formation process.
- FIGS. 5A to 5E are process sectional views of a method for manufacturing a semiconductor light emitting element according to a variation of the first embodiment.
- an insulating layer 40 made of e.g. SiO 2 or SiN and a transparent conductive film 42 made of e.g. ITO are formed in this order.
- the thickness of the insulating layer 40 is preferably in the range of e.g. 50-200 nm.
- the transparent conductive film 42 is preferably made as thin as e.g. 50-200 nm.
- a second film 46 made of Au is formed on the second surface 42 b of the transparent conductive film 42 .
- a first film 45 made of Ag is formed and patterned.
- the thickness of the first film 45 is preferably made thin, such as in the range of 50-400 nm, to the extent that the reflectance can be kept high.
- a first bonding electrode 48 is formed so as to cover the upper surface of the patterned first film 45 and the second film 46 exposed at the region where the first film 45 has been removed.
- the first bonding electrode 48 includes, e.g. from the second film 46 side, a barrier metal such as Ti/Pt, and a metal such as Au in this order.
- the first bonding electrode 48 and the second bonding electrode 12 are stacked and pressurized, and heated to higher than or equal to the melting point of the metal solder material.
- the melted metal solder material provides wafer bonding while filling the step difference so as not to produce a gap between the first bonding electrode 48 and the support substrate 10 .
- the crystal growth substrate 50 is removed.
- a mixed solution of ammonia and hydrogen peroxide can be used.
- the removal process is not limited thereto.
- the wafer bonding temperature is near 350° C.
- the interfacial region between the second film 46 and the first film 45 is alloyed. That is, a reflection layer 44 made of an alloy layer of Au and Ag is formed.
- the transparent conductive film 42 side of the interior region 44 b is constituted by the second film 46 .
- the composition ratio of the first metal having high light reflectance is increased by heat treatment so that the light reflectance of the interior region 44 b is made higher than the light reflectance of the exterior region 44 a.
- the reflection layer 44 includes an interior region 44 b having a large thickness and an exterior region 44 a around the interior region 44 b .
- the reflection layer 44 reflects the emission light upward.
- the side surface of the first film 45 is surrounded with the second film 46 and the first bonding electrode 48 . This suppresses peeling and migration of the first film 45 made of Ag.
- FIG. 6A is a graph showing the distribution of Ag content ratio of the reflection layer 44 before heat treatment of the semiconductor light emitting element according to the variation.
- FIG. 6B is a graph showing the distribution of Ag content ratio of the reflection layer 44 after heat treatment.
- FIG. 6A shows the distribution of Ag content ratio in the wafer depth direction along line C-C of FIG. 5D .
- the second film 46 is provided in contact with the transparent conductive film 42 .
- FIG. 6B shows the distribution of Ag content ratio along line C-C of FIG. 5E .
- Ag is diffused into thin Au. This increases the Ag content ratio of the interior region 44 b on the transparent conductive film 42 side.
- the Ag content ratio at the surface in contact with the transparent conductive film 42 is set to 95 at % or more. That is, the Ag content ratio becomes higher toward the first bonding electrode 48 .
- the exterior region 44 a Ag is diffused primarily laterally to form an alloy layer.
- the light reflectance of the exterior region 44 a which was an Au film before alloying, can be made lower than the light reflectance of the interior region 44 b at the surface in contact with the transparent conductive film 42 .
- FIG. 7 is a schematic sectional view of a semiconductor light emitting element according to a second embodiment.
- the semiconductor stacked body 90 is made of a nitride-based material represented by the composition formula In x Ga y Al 1-x-y N (where 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, x+y ⁇ 1). Its emission light is set in the wavelength range from ultraviolet to green.
- the stacked body 90 includes a second cladding layer 92 made of e.g. Al 0.2 Ga 0.8 N, a light emitting layer 93 provided on the second cladding layer 92 , a first cladding layer 94 provided on the light emitting layer 93 and made of e.g. Al 0.2 Ga 0.8 N of the first conductivity type, and a current spreading layer 95 of the first conductivity type provided on the first cladding layer 94 .
- the cross-sectional structure of the semiconductor stacked body 90 is not limited thereto, but may include e.g. a contact layer and a light guide layer. As shown in FIG. 7 , the light G 1 directed upward from the light emitting region ER, and the light G 2 directed downward from the light emitting region ER and reflected by the reflection layer 44 , can be extracted upward.
- FIG. 8 is a graph showing the dependence of the reflectance of metals on the wavelength.
- the vertical axis represents the light reflectance of metals (%).
- the horizontal axis represents the wavelength of incident light ( ⁇ m). In the short wavelength range such as blue light, the light reflectance of the metal may decrease.
- the reflectance of Ag and Al is as high as 90% or more in the wavelength range of 450 nm or more.
- the reflectance of Au is as low as approximately 48%, and the reflectance of Pt is as low as approximately 57%. That is, preferably, the metal reflection layer provided inside the semiconductor light emitting element for emitting light in the wavelength range from blue to green includes e.g. Ag, Ag alloy, or Al.
- the interior region 44 b is configured to include Ag at high proportion.
- the Ag content ratio of the exterior region 44 a around the interior region 44 b is made lower than the Ag content ratio of the interior region 44 b .
- the reflectance in the region having high light emission intensity can be set to the reflectance of Ag, i.e., near 90%, and the reflectance in the exterior region having low light emission intensity can be set to approximately 50%. That is, if the width WO of the exterior region 44 a is set to e.g. 10 ⁇ m, then a reflection layer having high reflectance can be achieved while suppressing migration of Ag to the end surface and keeping close contact.
- FIG. 9 is a schematic sectional view of a semiconductor light emitting element according to a third embodiment.
- the semiconductor light emitting element includes a semiconductor stacked body 30 including a light emitting layer 22 capable of emitting emission light, a reflection layer 44 provided on a first surface 30 a side of the semiconductor stacked body 30 , a first bonding electrode 48 , a support substrate 10 made of e.g. conductive Si or Ge, and a second bonding electrode 12 provided on the support substrate 10 .
- the reflection layer 44 is smaller than the semiconductor stacked body 30 in plan view. That is, the outer edge 44 s of the reflection layer 44 is located inside the side surface SS of the semiconductor light emitting element. On the outer edge 44 s and surface of the reflection layer 44 , a first bonding electrode 49 is provided.
- the first bonding electrode 49 includes e.g. titanium (Ti) 49 a , platinum (Pt) 49 b , and titanium (Ti) 49 c .
- the first bonding electrode 49 may further include a metal solder material 49 d .
- the reflection layer 44 includes e.g. Ag
- Ag is not exposed at the side surface SS. Hence, its migration and sulfurization can be suppressed.
- a transparent conductive film 42 may be provided between the semiconductor stacked body 30 and the reflection layer 44 .
- the outer edge 42 s of the transparent conductive film 42 is located inside the side surface SS. That is, near the side surface SS, the adhesive strength between the first bonding electrode 49 and the insulating layer 40 is easily made higher than the adhesive strength between the first bonding electrode 49 and the transparent conductive film 42 .
- high adhesive strength is achieved in e.g. the dicing process.
- FIGS. 10A to 10F are process sectional views of a method for manufacturing a semiconductor light emitting element according to the third embodiment.
- FIGS. 10A to 10F show half the size of the semiconductor element in the cross section of the wafer.
- a semiconductor stacked body 30 is formed on a crystal growth substrate 50 .
- the crystal growth substrate 50 is made of GaAs.
- the semiconductor stacked body 30 includes, from the crystal growth substrate 50 side, a first layer 20 of the first conductivity type, a light emitting layer 22 , a second layer 24 of the second conductivity type, and a contact layer 26 made of GaP of the second conductivity type having low optical loss.
- the first layer 20 and the second layer 24 can include cladding layers for sandwiching the light emitting layer 22 on both sides to confine light in the vertical direction.
- an insulating layer 40 made of e.g. SiO 2 or Si 3 N 4 is formed on the contact layer 26 .
- the thickness of the insulating layer 40 is set to e.g. 50 nm.
- the insulating layer 40 is provided with an opening.
- a transparent conductive film 42 is provided so as to cover the insulating layer 40 and the contact layer 26 exposed in its opening.
- the transparent conductive film 42 is set to e.g. 60 nm.
- a reflection layer 44 made of e.g. an Ag alloy layer (e.g., a thickness of 200 nm) is formed.
- the reflection layer 44 and the transparent conductive film 42 near the side surface of the chip are removed.
- the first bonding electrode 49 includes e.g. titanium 49 a , platinum 49 b , titanium 49 c , and a metal solder material 49 d made of e.g. AuIn.
- the first bonding electrode 49 includes a convex portion 49 e on the reflection layer 44 , and a bottom portion 49 f on the insulating layer 40 .
- the first bonding electrode 49 includes the convex portion 49 e on the reflection layer 44 , and the bottom portion 49 f on the insulating layer 40 , and produces a step difference T 5 .
- a second bonding electrode 12 made of a metal solder material made of e.g. AuIn is formed on a support substrate 10 .
- the first bonding electrode 49 and the second bonding electrode 12 are stacked and pressurized, and heated to higher than or equal to the melting point of the solder material.
- the melted solder material fills the step difference T 5 of the first bonding electrode 49 to provide gapless wafer bonding. This can increase the adhesive strength between the support substrate 10 and the semiconductor stacked body 30 .
- first bonding electrode 49 and the second bonding electrode 12 include a solder material, then after they melt into each other, the boundary (dashed line) is not left clearly. Here, even if only the second bonding electrode 12 includes a solder material, the step difference T 5 can be filled.
- the crystal growth substrate 50 is removed.
- a first electrode 60 and a second electrode 62 are formed.
- a trench 30 s is formed in the region serving as a dicing line. Blade dicing, for instance, is performed on the trench 30 s for separation into chips.
- FIG. 11 is a schematic sectional view of a variation according to the third embodiment.
- the outer edge 42 s of the transparent conductive film 42 may be exposed at the side surface SS.
- a step difference may occur in the region serving as a dicing line.
- the second bonding electrode 12 includes a solder material. Hence, the melted solder material fills the step difference T 5 and suppresses the occurrence of a cavity.
- FIG. 12 is a schematic sectional view of a semiconductor light emitting element wafer according to a comparative example.
- a trench 130 s formed by e.g. scribing is provided. Near the dicing line, the reflection layer and the transparent conductive film are not provided. At the side surface after separation into chips, the reflection layer and the transparent conductive film are not exposed.
- the step difference is not filled, and cavities C 1 , C 2 occur below the dicing line after wafer bonding. Among them, if the cavity C 1 occurs, then in e.g. the dicing process for cutting by rotating a blade 99 , cracking, chipping and the like of the chip are likely to occur near the cavity C 1 . In contrast, in the semiconductor light emitting element according to the third embodiment, no cavity occurs near the dicing line. Thus, cracking and chipping of the chip can be suppressed.
- the adhesive strength of the multilayer including the support substrate 10 , the reflection layer 44 , and the semiconductor stacked body 30 is increased.
- the brightness can be increased while keeping high reliability.
- the process for forming the bonding electrode is simplified, and a manufacturing method with higher productivity can be achieved.
- the semiconductor light emitting element according to the present embodiments can be widely used in e.g. illumination devices, display devices, and traffic signals.
Abstract
According to one embodiment, a semiconductor light emitting element includes a light emitting element includes a semiconductor stacked body including a light emitting layer, a reflection layer, a support substrate, a first bonding electrode and a second bonding electrode. The reflection layer is made of a metal and has a first surface and a second surface opposite to the first surface. The semiconductor stacked body is provided on a side of the first surface of the reflection layer. The first bonding electrode is provided between the second surface and the support substrate and includes a convex portion projected toward the support substrate and a bottom portion provided around the convex portion in plan view. The second bonding electrode includes a concave portion fitted in the convex portion of the first bonding electrode and is capable of bonding the support substrate and the first bonding electrode.
Description
- This application is a division of and claims the benefit of priority under 35 U.S.C. §120 from U.S. Ser. No. 13/421,402 filed Mar. 15, 2012, and claims the benefit of priority under 35 U.S.C. §119 from Japanese Patent Application No. 2011-121623 filed May 31, 2011; the entire contents of each of which are incorporated herein by reference.
- Embodiments described herein relate generally to a semiconductor light emitting element and a method for manufacturing same.
- For light emitting elements used in e.g. illumination devices, display devices, and traffic signals, there is an increasing demand for higher brightness.
- A metal reflection layer can be provided below the light emitting layer. Then, the emission light directed downward from the light emitting layer is reflected. This increases the upward light extraction efficiency and facilitates increasing the brightness. In this case, for instance, a silicon (Si) substrate can be wafer bonded to a semiconductor substrate including the light emitting layer. Then, the crystal growth substrate can be removed to form a thin film multilayer light emitting element. This facilitates increasing the volume productivity.
- The reflectance of a metal film decreases as the wavelength of visible light becomes shorter. In particular, the light reflectance of a stable electrode metal such as Au, Pt, and Pd decreases to 60% or less at 450 nm. This makes it difficult to achieve high light extraction efficiency.
- In contrast, the light reflectance of Ag and Al can be made as high as 90% or more at 450 nm. However, Ag and Al are prone to migration and cause the problem of decreased reliability.
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FIG. 1A is a schematic plan view of a semiconductor light emitting element according to a first embodiment, andFIG. 1B is a schematic sectional view taken along line A-A; -
FIGS. 2A to 2F are process sectional views of a method for manufacturing a semiconductor light emitting element according to the first embodiment; -
FIG. 3A is a graph showing the distribution of Ag content ratio of the reflection layer before heat treatment, andFIG. 3B is a graph showing the distribution of Ag content ratio of the reflection layer after heat treatment; -
FIG. 4 is a schematic sectional view of a semiconductor light emitting element according to a comparative example; -
FIGS. 5A to 5E are process sectional views of a method for manufacturing a semiconductor light emitting element according to a variation of the first embodiment; -
FIG. 6A is a graph showing the distribution of Ag content ratio of thereflection layer 44 before heat treatment of the semiconductor light emitting element according to the variation, andFIG. 6B is a graph showing the distribution of Ag content ratio of thereflection layer 44 after heat treatment; -
FIG. 7 is a schematic sectional view of a semiconductor light emitting element according to a second embodiment; -
FIG. 8 is a graph showing the dependence of the reflectance of metals on the wavelength; -
FIG. 9 is a schematic sectional view of a semiconductor light emitting element according to a third embodiment; -
FIGS. 10A to 10F are process sectional views of a method for manufacturing a semiconductor light emitting element according to the third embodiment; -
FIG. 11 is a schematic sectional view of a variation according to the third embodiment; and -
FIG. 12 is a schematic sectional view of a semiconductor light emitting element wafer according to a comparative example. - In general, according to one embodiment, a light emitting element includes a semiconductor stacked body including a light emitting layer, a reflection layer, a support substrate, a first bonding electrode and a second bonding electrode. The reflection layer is made of a metal and has a first surface and a second surface opposite to the first surface. The semiconductor stacked body is provided on a side of the first surface of the reflection layer. The first bonding electrode is provided between the second surface and the support substrate and includes a convex portion projected toward the support substrate and a bottom portion provided around the convex portion in plan view. The second bonding electrode includes a concave portion fitted in the convex portion of the first bonding electrode and is capable of bonding the support substrate and the first bonding electrode.
- Embodiments of the invention will now be described with reference to the drawings.
-
FIG. 1A is a schematic plan view of a semiconductor light emitting element according to a first embodiment.FIG. 1B is a schematic sectional view taken along line A-A. - The semiconductor light emitting element includes a semiconductor stacked
body 30 including alight emitting layer 22 capable of emitting emission light, areflection layer 44 provided on afirst surface 30a side of the semiconductor stackedbody 30, afirst bonding electrode 48, asupport substrate 10 made of e.g. conductive Si or Ge, and asecond bonding electrode 12 provided on thesupport substrate 10. Between the semiconductor stackedbody 30 and thereflection layer 44, a transparentconductive film 42 may be provided. - The semiconductor stacked
body 30 includes an InGaAlP-based material represented by the composition formula Inx(GayAl1-y)1-xP (where 0≦x≦1 , 0≦y≦1) or an AlGaAs-based material represented by the composition formula AlxGa1-xAs (0≦x≦0.6). - The
reflection layer 44 includes aninterior region 44 b provided at the center and anexterior region 44 a provided around theinterior region 44 b in plan view. In this example, theexterior region 44 a is provided so as to surround theinterior region 44 b in plan view. The thickness T2 (after alloying) of theexterior region 44 a is smaller than the thickness T1 (after alloying) of theinterior region 44 b. Thefirst surface 44 c of thereflection layer 44 reflects emission light. Thesecond surface 44 d opposite to thefirst surface 44 c of thereflection layer 44 has a step difference T3 (=T1−T2) between theexterior region 44 a and theinterior region 44 b. - If the semiconductor stacked
body 30 is in direct contact with thereflection layer 44 made of Au or Ag, an alloy layer may be formed and increase the optical loss. If a transparentconductive film 42 is provided between the semiconductor stackedbody 30 and thereflection layer 44, an alloy layer is less likely to be formed between the semiconductor stackedbody 30 and the transparentconductive film 42. Thus, the optical loss can be reduced, and hence this is more preferable. - The
first bonding electrode 48 is provided so as to cover the step difference T3 of thesecond surface 44 d of thereflection layer 44. That is, thefirst bonding electrode 48 includes aconvex portion 48 e provided on theinterior region 44 b of thereflection layer 44, and abottom portion 48 f provided on theexterior region 44 a around theinterior region 44 b. As a result, a step difference T4 occurs in thefirst bonding electrode 48. Thesecond bonding electrode 12 can be made of a metal solder material. By melting the metal solder material, thefirst bonding electrode 48 can be bonded to thesupport substrate 10 while filling the step difference T4 of thefirst bonding electrode 48. That is, thesecond bonding electrode 12 includes a concave portion fitted in theconvex portion 48 e of thefirst bonding electrode 48. By the solidification of the metal solder material, the adhesive strength between the wafers can be increased. Here, asecond electrode 62 is provided on the back surface of theconductive support substrate 10. - Consider the case where the semiconductor stacked
body 30 is made of an InGaAlP-based material. In this case, thelight emitting layer 22 can emit light in the wavelength range from green to red. InFIG. 1B , the semiconductor stackedbody 30 includes, from the transparentconductive film 42 side, acontact layer 26 of the second conductivity type, asecond layer 24 of the second conductivity type, alight emitting layer 22, and afirst layer 20 of the first conductivity type in this order. Furthermore, on the surface of thecontact layer 26 made of e.g. GaP, an insulatinglayer 40 having an opening 40 a and made of e.g. SiO2 or Si3N4 may be provided. Then, the current is blocked by the insulatinglayer 40, and flows through the opening 40 a between thefirst electrode 60 and thefirst bonding electrode 48. Thus, the light emitting region ER above the opening 40 a emits light. For instance, the light G1 directed upward from the light emitting region ER, and the light G2 directed downward from the light emitting region ER and reflected by thereflection layer 44, can be extracted upward. - The
second bonding electrode 12 can be made of a metal solder material provided on thesupport substrate 10. Alternatively, on the surface of thesupport substrate 10, for instance, Ti/Pt/Au or Cr/Au may be provided, and thesecond bonding electrode 12 may be provided thereon. The melted metal solder material bonds thefirst bonding electrode 48 to thesupport substrate 10 while filling the step difference T4. In the case where the surface of thesecond bonding electrode 12 is made of Au, the surface of thefirst bonding electrode 48 can also be made of Au. Then, by application of heat and pressure, they can be bonded also in the thermocompression mode. Here, inFIG. 1B , theinterior region 44 b is rectangular. However, the shape is not limited thereto, but may be e.g. circular. -
FIGS. 2A to 2F are process sectional views of a method for manufacturing a semiconductor light emitting element according to the first embodiment. -
FIGS. 2A to 2F show the end portion OR (dashed line) inFIG. 1B . In the schematic view ofFIG. 2A , on acrystal growth substrate 50, a semiconductor stackedbody 30 is formed. Here, thecrystal growth substrate 50 is made of GaAs. However, the invention is not limited thereto. The semiconductor stackedbody 30 includes, from thecrystal growth substrate 50 side, afirst layer 20 of the first conductivity type, alight emitting layer 22, asecond layer 24 of the second conductivity type, and acontact layer 26 made of GaP of the second conductivity type having low optical loss. Thefirst layer 20 and thesecond layer 24 can include cladding layers for sandwiching thelight emitting layer 22 on both sides to confine light in the vertical direction. On thecontact layer 26, an insulatinglayer 40 made of e.g. SiO2 or Si3N4 is formed. - The thickness of the insulating
layer 40 is preferably in the range of e.g. 50-200 nm. The insulatinglayer 40 is provided with an opening, although not shown in the end portion OR. A transparentconductive film 42 made of e.g. ITO (indium tin oxide), zinc oxide, or tin oxide is provided so as to cover the insulatinglayer 40 and thecontact layer 26 exposed in its opening. The transparentconductive film 42 absorbs part of visible light. Hence, the transparentconductive film 42 is preferably made as thin as e.g. 50-200 nm to the extent that alloying between the semiconductor stackedbody 30 and thereflection layer 44 can be suppressed. - On the
second surface 42 b of the transparentconductive film 42, afirst film 45 made of a first metal is formed. The first metal is e.g. Ag, Ag alloy, or Al. The thickness of thefirst film 45 is preferably made thin, such as in the range of 50-400 nm, to the extent that the reflectance can be kept high. - In the schematic view of
FIG. 2B , thefirst film 45 is patterned using a photoresist. In the case of Ag, for instance, a wet etching method with phosphoric acid or a dry etching method can be used. - In the schematic view of
FIG. 2C , asecond film 46 made of a second metal is formed so as to cover the upper surface of the patternedfirst film 45 and the region of the transparentconductive film 42 where thefirst film 45 has been removed. The second metal is Au, but may also be made of e.g. Pd or Pt. The contact strength between thesecond film 46 and the transparentconductive film 42 can be made higher than the contact strength between thefirst film 45 and the transparentconductive film 42. This facilitates keeping high adhesive strength required for e.g. the dicing process. - In the schematic view of
FIG. 2D , on thesecond film 46, afirst bonding electrode 48 is formed. Thefirst bonding electrode 48 includes, e.g. from thesecond film 46 side, a barrier metal such as titanium (Ti) 48 a and platinum (Pt) 48 b, and a metal such as gold (Au) 48 c in this order. As the barrier metal, for instance, tungsten/nickel (W/Ni) can also be used. Thefirst bonding electrode 48 does not need a patterning process. This can simplify the manufacturing process. More specifically, the number of times of the photolithography process and patterning process can be reduced, and a manufacturing method with high productivity can be realized. Thefirst bonding electrode 48 includes aconvex portion 48 e on theinterior region 44 b, and abottom portion 48 f on theexterior region 44 a. - On the other hand, on a
support substrate 10, asecond bonding electrode 12 made of e.g. a metal solder material is formed. The metal solder material can be e.g. a eutectic such as AuIn, AuSn (eutectic temperature being approximately 280° C.), AuGe (eutectic temperature being approximately 350° C.), AuSi (eutectic temperature being approximately 380° C.), or In. Its thickness can be set to e.g. 1-5 μm. - As shown in the schematic view of
FIG. 2E , thefirst bonding electrode 48 and thesecond bonding electrode 12 are stacked and pressurized, and heated to higher than or equal to the melting point of the metal solder material. The melting point of the metal solder material can be set to within the temperature range of e.g. 150-400° C. depending on its material. - The melted metal solder material fills the step difference T4 of the
first bonding electrode 48 to provide gapless wafer bonding. This can increase the adhesive strength between thesupport substrate 10 and the semiconductor stackedbody 30. Here, the step difference T4 is measured between the surface of theconvex portion 48 e and the surface of thebottom portion 48 f near the outer edge portion. - Furthermore, depending on the temperature of the heat treatment of the wafer bonding process, alloying may easily proceed from the neighborhood of the interface between the
first film 45 and thesecond film 46. By varying the temperature and time of the heat treatment process, the composition ratio of alloying can be controlled. As a result, the bonding strength between thefirst film 45 and thesecond film 46 can be increased. Here, the transparentconductive film 42 side of theinterior region 44 b is constituted by thefirst film 45. Hence, despite alloying, the light reflectance of theinterior region 44 b can be easily made higher than the light reflectance of theexterior region 44 a. -
FIG. 3A is a graph showing the distribution of Ag content ratio of the reflection layer before heat treatment.FIG. 3B is a graph showing the distribution of Ag content ratio of the reflection layer after heat treatment. - The vertical axis represents the Ag content ratio (at %, percentage in the number of atoms) of the
interior region 44 b. The horizontal axis represents position in the wafer depth direction. Here, the heat treatment process may be either a wafer bonding process or another process. -
FIG. 3A shows the distribution of Ag content ratio in the wafer depth direction along line B-B ofFIG. 2E . Before heat treatment, thefirst film 45 is made of 100% Ag, and thesecond film 46 is made of 0% Ag.FIG. 3B shows the distribution of Ag content ratio along line B-B ofFIG. 2F . After heat treatment, Ag and Au interdiffuse, and alloying proceeds as shown by curve A to curve B. The thickness of the first film (Ag) 45 is larger than the thickness of the second film (Au) 46. Hence, Ag easily penetrates into Au. Conversely, Au also penetrates into Ag. However, on the side in contact with the transparentconductive film 42, the Ag content ratio is set to remain 95% or more. Here, inFIG. 1A , even if the width of theexterior region 44 a is made sufficiently smaller than the width of theinterior region 44 b, migration of Ag can be suppressed. - In an experiment by the inventors, the thickness of the
first film 45 made of Ag was set to approximately 20 times the thickness of thesecond film 46 made of Au. By the melted metal solder material, wafer bonding was performed at 350° C. In this case, the Ag content ratio of theinterior region 44 b in contact with the transparentconductive film 42 was successfully made 95 at % or more. As a result, it has turned out that for the light reflectance on the transparentconductive film 42 side of theinterior region 44 b, the decrease from the light reflectance of Ag can be set to 2% or less. That is, for instance, the thickness of thefirst film 45 made of Ag can be set to approximately 200 nm, and the thickness of thesecond film 46 made of Au can be set to approximately 10 nm. - Into the
exterior region 44 a, Ag is diffused primarily laterally to form an alloy layer. Even after alloying by diffusion of Ag, the light reflectance of theexterior region 44 a, which was an Au film before alloying, is lower than the light reflectance of theinterior region 44 b at the surface in contact with the transparentconductive film 42. - Finally, as shown in the schematic view of
FIG. 2F , thecrystal growth substrate 50 is removed. In this case, for instance, a mixed solution of ammonia and hydrogen peroxide can be used. However, the removal process is not limited thereto. - Subsequently, along a dicing line set above the
exterior region 44 a, a process for separation into chips is performed. This can prevent the first metal from being exposed at the side surface of the chip. Thus, short circuit of the pn junction due to migration of e.g. Ag, and the sulfurization of Ag, for instance, can be suppressed. Hence, the reliability can be improved. -
FIG. 4 is a schematic sectional view of a semiconductor light emitting element according to a comparative example. - The semiconductor stacked
body 130 includes alight emitting layer 122 and is made of an InAlGaP-based material. Below the semiconductor stackedbody 130, an insulatingfilm 140 is provided. In anopening 140 a provided in the insulatingfilm 140, the semiconductor stackedbody 130 is in contact with a transparentconductive film 142. On the central region of the lower surface of the transparentconductive film 142, anAg film 144 is provided. Furthermore, on the lower surface of the transparentconductive film 142 in the exterior region, anAu film 145 thicker than theAg film 144 is provided. Abonding electrode 112 made of a barrier metal such as Ti and Pt is provided so as to cover the surface of theAg film 144 and the surface of theAu film 145. TheSi substrate 110 and thebonding electrode 112 are bonded with an AuIn-based alloy solder. - The reflectance of Ag and Al is higher than that of Au. Hence, the emission light directed downward from the light emitting region above the opening 140 a is efficiently reflected upward. However, Ag and Al are prone to migration. Hence, if Ag or Al extends to the end surface of the element, Ag particles having migrated causes e.g. short circuit of the pn junction. The
thick Au film 145 can suppress this migration of Ag. However, the process for patterning theAg film 144 and the process for patterning theAu film 145 are each needed. Thus, on the lower surface of the transparentconductive film 142, agap 150 is likely to occur at the boundary between theAg film 144 and theAu film 145. Compared with Au and the like, the adhesive strength of Ag or Ag alloy with the transparentconductive film 142 is not sufficient. Thus, from the neighborhood of thegap 150, peeling of theAg film 144 is likely to occur. - In contrast, in the first embodiment, as shown in
FIG. 2C , thesecond film 46 is provided so as to gaplessly cover the front surface and side surface of thefirst film 45 and the surface of the transparentconductive film 42. Thus, while suppressing the peeling of thefirst film 45, migration of Ag to the chip side surface can be suppressed. Furthermore, in the first embodiment, the process for patterning thesecond film 46 is not needed. Moreover, thesecond film 46 and thefirst bonding electrode 48 can be formed by a continuous process. This can reduce the number of times of the metal film formation process. -
FIGS. 5A to 5E are process sectional views of a method for manufacturing a semiconductor light emitting element according to a variation of the first embodiment. - In the schematic view of
FIG. 5A , on thecontact layer 26 of the semiconductor stackedbody 30, an insulatinglayer 40 made of e.g. SiO2 or SiN and a transparentconductive film 42 made of e.g. ITO are formed in this order. The thickness of the insulatinglayer 40 is preferably in the range of e.g. 50-200 nm. The transparentconductive film 42 is preferably made as thin as e.g. 50-200 nm. Furthermore, on thesecond surface 42 b of the transparentconductive film 42, asecond film 46 made of Au is formed. - In
FIG. 5B , on thesecond film 46, afirst film 45 made of Ag is formed and patterned. The thickness of thefirst film 45 is preferably made thin, such as in the range of 50-400 nm, to the extent that the reflectance can be kept high. - As shown in the schematic view of
FIG. 5C , afirst bonding electrode 48 is formed so as to cover the upper surface of the patternedfirst film 45 and thesecond film 46 exposed at the region where thefirst film 45 has been removed. Thefirst bonding electrode 48 includes, e.g. from thesecond film 46 side, a barrier metal such as Ti/Pt, and a metal such as Au in this order. - As shown in the schematic view of
FIG. 5D , thefirst bonding electrode 48 and thesecond bonding electrode 12 are stacked and pressurized, and heated to higher than or equal to the melting point of the metal solder material. The melted metal solder material provides wafer bonding while filling the step difference so as not to produce a gap between thefirst bonding electrode 48 and thesupport substrate 10. - Finally, as shown in the schematic view of
FIG. 5E , thecrystal growth substrate 50 is removed. In this case, for instance, a mixed solution of ammonia and hydrogen peroxide can be used. However, the removal process is not limited thereto. If the wafer bonding temperature is near 350° C., the interfacial region between thesecond film 46 and thefirst film 45 is alloyed. That is, areflection layer 44 made of an alloy layer of Au and Ag is formed. In this case, the transparentconductive film 42 side of theinterior region 44 b is constituted by thesecond film 46. Thus, the composition ratio of the first metal having high light reflectance is increased by heat treatment so that the light reflectance of theinterior region 44 b is made higher than the light reflectance of theexterior region 44 a. - The
reflection layer 44 includes aninterior region 44 b having a large thickness and anexterior region 44 a around theinterior region 44 b. Thereflection layer 44 reflects the emission light upward. In this variation, the side surface of thefirst film 45 is surrounded with thesecond film 46 and thefirst bonding electrode 48. This suppresses peeling and migration of thefirst film 45 made of Ag. -
FIG. 6A is a graph showing the distribution of Ag content ratio of thereflection layer 44 before heat treatment of the semiconductor light emitting element according to the variation. -
FIG. 6B is a graph showing the distribution of Ag content ratio of thereflection layer 44 after heat treatment. -
FIG. 6A shows the distribution of Ag content ratio in the wafer depth direction along line C-C ofFIG. 5D . Before heat treatment, thesecond film 46 is provided in contact with the transparentconductive film 42.FIG. 6B shows the distribution of Ag content ratio along line C-C ofFIG. 5E . After heat treatment, Ag is diffused into thin Au. This increases the Ag content ratio of theinterior region 44 b on the transparentconductive film 42 side. By varying the heat treatment temperature and time, the Ag content ratio at the surface in contact with the transparentconductive film 42 is set to 95 at % or more. That is, the Ag content ratio becomes higher toward thefirst bonding electrode 48. Furthermore, into theexterior region 44 a, Ag is diffused primarily laterally to form an alloy layer. The light reflectance of theexterior region 44 a, which was an Au film before alloying, can be made lower than the light reflectance of theinterior region 44 b at the surface in contact with the transparentconductive film 42. -
FIG. 7 is a schematic sectional view of a semiconductor light emitting element according to a second embodiment. - The semiconductor stacked
body 90 is made of a nitride-based material represented by the composition formula InxGayAl1-x-yN (where 0≦x≦1, 0≦y≦1, x+y≦1). Its emission light is set in the wavelength range from ultraviolet to green. Thestacked body 90 includes asecond cladding layer 92 made of e.g. Al0.2Ga0.8N, alight emitting layer 93 provided on thesecond cladding layer 92, afirst cladding layer 94 provided on thelight emitting layer 93 and made of e.g. Al0.2Ga0.8N of the first conductivity type, and a current spreadinglayer 95 of the first conductivity type provided on thefirst cladding layer 94. The cross-sectional structure of the semiconductor stackedbody 90 is not limited thereto, but may include e.g. a contact layer and a light guide layer. As shown inFIG. 7 , the light G1 directed upward from the light emitting region ER, and the light G2 directed downward from the light emitting region ER and reflected by thereflection layer 44, can be extracted upward. -
FIG. 8 is a graph showing the dependence of the reflectance of metals on the wavelength. - The vertical axis represents the light reflectance of metals (%). The horizontal axis represents the wavelength of incident light (μm). In the short wavelength range such as blue light, the light reflectance of the metal may decrease. As shown in
FIG. 8 , the reflectance of Ag and Al is as high as 90% or more in the wavelength range of 450 nm or more. On the other hand, at 450 nm, the reflectance of Au is as low as approximately 48%, and the reflectance of Pt is as low as approximately 57%. That is, preferably, the metal reflection layer provided inside the semiconductor light emitting element for emitting light in the wavelength range from blue to green includes e.g. Ag, Ag alloy, or Al. - Also in the second embodiment, in the
reflection layer 44 including Ag and Au, theinterior region 44 b is configured to include Ag at high proportion. The Ag content ratio of theexterior region 44 a around theinterior region 44 b is made lower than the Ag content ratio of theinterior region 44 b. Then, at 450 nm, the reflectance in the region having high light emission intensity can be set to the reflectance of Ag, i.e., near 90%, and the reflectance in the exterior region having low light emission intensity can be set to approximately 50%. That is, if the width WO of theexterior region 44 a is set to e.g. 10 μm, then a reflection layer having high reflectance can be achieved while suppressing migration of Ag to the end surface and keeping close contact. -
FIG. 9 is a schematic sectional view of a semiconductor light emitting element according to a third embodiment. - The semiconductor light emitting element includes a semiconductor stacked
body 30 including alight emitting layer 22 capable of emitting emission light, areflection layer 44 provided on afirst surface 30 a side of the semiconductor stackedbody 30, afirst bonding electrode 48, asupport substrate 10 made of e.g. conductive Si or Ge, and asecond bonding electrode 12 provided on thesupport substrate 10. - The
reflection layer 44 is smaller than the semiconductor stackedbody 30 in plan view. That is, theouter edge 44 s of thereflection layer 44 is located inside the side surface SS of the semiconductor light emitting element. On theouter edge 44 s and surface of thereflection layer 44, afirst bonding electrode 49 is provided. Thefirst bonding electrode 49 includes e.g. titanium (Ti) 49 a, platinum (Pt) 49 b, and titanium (Ti) 49 c. Thefirst bonding electrode 49 may further include ametal solder material 49 d. In the case where thereflection layer 44 includes e.g. Ag, Ag is not exposed at the side surface SS. Hence, its migration and sulfurization can be suppressed. - Furthermore, as shown in this figure, between the semiconductor stacked
body 30 and thereflection layer 44, a transparentconductive film 42 may be provided. In this case, theouter edge 42 s of the transparentconductive film 42 is located inside the side surface SS. That is, near the side surface SS, the adhesive strength between thefirst bonding electrode 49 and the insulatinglayer 40 is easily made higher than the adhesive strength between thefirst bonding electrode 49 and the transparentconductive film 42. Thus, advantageously, high adhesive strength is achieved in e.g. the dicing process. -
FIGS. 10A to 10F are process sectional views of a method for manufacturing a semiconductor light emitting element according to the third embodiment. -
FIGS. 10A to 10F show half the size of the semiconductor element in the cross section of the wafer. InFIG. 10A , on acrystal growth substrate 50, a semiconductor stackedbody 30 is formed. Here, thecrystal growth substrate 50 is made of GaAs. The semiconductor stackedbody 30 includes, from thecrystal growth substrate 50 side, afirst layer 20 of the first conductivity type, alight emitting layer 22, asecond layer 24 of the second conductivity type, and acontact layer 26 made of GaP of the second conductivity type having low optical loss. Thefirst layer 20 and thesecond layer 24 can include cladding layers for sandwiching thelight emitting layer 22 on both sides to confine light in the vertical direction. On thecontact layer 26, an insulatinglayer 40 made of e.g. SiO2 or Si3N4 is formed. - The thickness of the insulating
layer 40 is set to e.g. 50 nm. The insulatinglayer 40 is provided with an opening. As shown inFIG. 10B , a transparentconductive film 42 is provided so as to cover the insulatinglayer 40 and thecontact layer 26 exposed in its opening. The transparentconductive film 42 is set to e.g. 60 nm. On thesecond surface 42 b of the transparentconductive film 42, areflection layer 44 made of e.g. an Ag alloy layer (e.g., a thickness of 200 nm) is formed. - As shown in
FIG. 10C , thereflection layer 44 and the transparentconductive film 42 near the side surface of the chip (near the dicing line) are removed. - Next, as shown in
FIG. 10D , on the insulatinglayer 40 exposed by the removal of thereflection layer 44 and the transparentconductive film 42 and on thereflection layer 44, afirst bonding electrode 49 is formed. Thefirst bonding electrode 49 includese.g. titanium 49 a,platinum 49 b,titanium 49 c, and ametal solder material 49 d made of e.g. AuIn. Thefirst bonding electrode 49 includes aconvex portion 49 e on thereflection layer 44, and abottom portion 49 f on the insulatinglayer 40. - As a result, as shown in
FIG. 10E , thefirst bonding electrode 49 includes theconvex portion 49 e on thereflection layer 44, and thebottom portion 49 f on the insulatinglayer 40, and produces a step difference T5. On the other hand, on asupport substrate 10, asecond bonding electrode 12 made of a metal solder material made of e.g. AuIn is formed. Furthermore, thefirst bonding electrode 49 and thesecond bonding electrode 12 are stacked and pressurized, and heated to higher than or equal to the melting point of the solder material. The melted solder material fills the step difference T5 of thefirst bonding electrode 49 to provide gapless wafer bonding. This can increase the adhesive strength between thesupport substrate 10 and the semiconductor stackedbody 30. If thefirst bonding electrode 49 and thesecond bonding electrode 12 include a solder material, then after they melt into each other, the boundary (dashed line) is not left clearly. Here, even if only thesecond bonding electrode 12 includes a solder material, the step difference T5 can be filled. - Next, as shown in
FIG. 10F , thecrystal growth substrate 50 is removed. Afirst electrode 60 and asecond electrode 62 are formed. Subsequently, atrench 30 s is formed in the region serving as a dicing line. Blade dicing, for instance, is performed on thetrench 30 s for separation into chips. -
FIG. 11 is a schematic sectional view of a variation according to the third embodiment. - The
outer edge 42 s of the transparentconductive film 42 may be exposed at the side surface SS. A step difference may occur in the region serving as a dicing line. However, thesecond bonding electrode 12 includes a solder material. Hence, the melted solder material fills the step difference T5 and suppresses the occurrence of a cavity. -
FIG. 12 is a schematic sectional view of a semiconductor light emitting element wafer according to a comparative example. - Along the dicing line, a
trench 130 s formed by e.g. scribing is provided. Near the dicing line, the reflection layer and the transparent conductive film are not provided. At the side surface after separation into chips, the reflection layer and the transparent conductive film are not exposed. In the comparative example in which neither thefirst bonding electrode 149 nor thesecond bonding electrode 112 includes a solder material, the step difference is not filled, and cavities C1, C2 occur below the dicing line after wafer bonding. Among them, if the cavity C1 occurs, then in e.g. the dicing process for cutting by rotating a blade 99, cracking, chipping and the like of the chip are likely to occur near the cavity C1. In contrast, in the semiconductor light emitting element according to the third embodiment, no cavity occurs near the dicing line. Thus, cracking and chipping of the chip can be suppressed. - In the semiconductor light emitting element according to the first to third embodiments, the adhesive strength of the multilayer including the
support substrate 10, thereflection layer 44, and the semiconductor stackedbody 30 is increased. Thus, the brightness can be increased while keeping high reliability. Furthermore, the process for forming the bonding electrode is simplified, and a manufacturing method with higher productivity can be achieved. The semiconductor light emitting element according to the present embodiments can be widely used in e.g. illumination devices, display devices, and traffic signals. - While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions. Indeed, the novel embodiments described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the inventions. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the invention.
Claims (6)
1. A method for manufacturing a semiconductor light emitting element, comprising:
forming a semiconductor stacked body including a light emitting layer on a crystal growth substrate;
forming a reflection layer on the semiconductor stacked body;
forming a first bonding electrode covering the reflection layer and including a convex portion and a bottom portion provided around the convex portion;
forming a second bonding electrode made of a solder material on a support substrate;
bonding the first bonding electrode and the support substrate by stacking the first bonding electrode and the second bonding electrode, heating the first bonding electrode and the second bonding electrode to higher than or equal to melting point of the solder material with pressurization, and filling a step difference between the convex portion and the bottom portion of the first bonding electrode; and
removing the crystal growth substrate.
2. The method according to claim 1 , wherein
the reflection layer includes an alloy made of a first metal and a second metal having a lower light reflectance than the first metal, and includes an interior region and an exterior region provided around the interior region in plan view and having a smaller thickness than the interior region, and the light reflectance at a surface of the interior region is higher than the light reflectance at a surface of the exterior region on a side of the semiconductor stacked body, and
the convex portion is formed so as to cover the interior region.
3. The method according to claim 2 , wherein
the forming a reflection layer includes selectively forming a first film made of the first metal, and forming a second film made of the second metal on the first metal and a region where the first metal has been removed,
the first metal is one of Ag, an Ag alloy, and Al, and
the second metal is one of Au, Pt, and Pd.
4. The method according to claim 2 , wherein
the forming a reflection layer includes forming a second film made of the second metal, and selectively forming a first film made of the first metal on the second film,
the first metal is one of Ag, an Ag alloy, and Al, and
the second metal is one of Au, Pt, and Pd.
5. The method according to claim 1 , wherein
the forming a reflection layer includes forming a film being smaller than the semiconductor stacked body in plan view and including Ag.
6. The method according to claim 1 , wherein
the forming a reflection layer includes forming a transparent conductive film on a surface of the semiconductor stacked body, and forming the reflection layer on a surface of the transparent conductive film.
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US20120305964A1 (en) | 2012-12-06 |
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