US20160001418A1 - Cmp apparatus and cmp method - Google Patents
Cmp apparatus and cmp method Download PDFInfo
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- US20160001418A1 US20160001418A1 US14/768,112 US201314768112A US2016001418A1 US 20160001418 A1 US20160001418 A1 US 20160001418A1 US 201314768112 A US201314768112 A US 201314768112A US 2016001418 A1 US2016001418 A1 US 2016001418A1
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- polishing
- rotating head
- chemical mechanical
- pressure chamber
- air
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
A chemical mechanical polishing apparatus in which a rotating head having a polishing pad mounted thereon whose contact area with a polishing object is smaller than surface area of the polishing object is pressed against and brought into contact with a surface of the polishing object mounted face up on a table, and is rotated with the table at rest while supplying slurry onto a contact surface to polish for a predetermined time, and then the rotating head is moved within the surface of the polishing object to polish the entire surface of the polishing object sequentially, including a pressure adjustment mechanism for maintaining a pressing load on the contact surface constant during polishing.
Description
- This application is the National Stage of International Application No. PCT/JP2013/000917 having an International Filing Date of 19 Feb. 2013, which designated the United States of America, and which International Application was published under PCT Article 21 (s) as WO Publication 2014/128754 A1, the disclosures of which are incorporated herein by reference in their entireties.
- The presently disclosed embodiment relates to a chemical mechanical polishing (CMP) apparatus and CMP method for polishing unevenness on a surface of an insulation film, a metal film, or a semiconductor film formed on a main surface of a semiconductor wafer or resin mold to be flat.
- Today's semiconductor integrated circuits have a multi-layer wiring structure due to miniaturization and high integration. Conventional wiring forming processes for a multi-layer wiring structure process a metal such as Al deposited on an insulation film by lithography and dry etching to form a metal wiring pattern. However, recent multi-layer wiring forming processes have employed a damascene process for copper wiring.
- In addition, in producing an electronic component with fine line widths, such as a coil element using a transfer mold made of metal or resin, copper deposited on a mold by a plate processing is polished to be flat by CMP, and is left only in via holes or wiring gutters to form an embedded copper wiring.
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FIG. 7A shows a CMP method using atypical CMP apparatus 700 as described in Japanese Patent Publication No. 2007-012936. This CMP method presses a rotating head (upper surface plate) 740 which fixedly holds apolishing object 730 such as a semiconductor wafer with its surface to be polished faced downward (face down) against a rotating table (lower surface plate) 720 to which a polishing cloth orpolishing pad 710 is pasted, and supplies liquid slurry (polishing agent) 760 onto thepolishing pad 710 through anozzle 750 while rotating the rotatinghead 740 and rotating table 720 respectively to scrape a film of a lower surface (surface to be processed) of thepolishing object 730 by chemical action and mechanical polishing to be flat. - Conventionally, a load was maintained constant over the entire surface of the
polishing object 730 and combined speed of the speed generated by the rotation of thepolishing pad 710 and the speed of thepolishing object 730 was controlled so as to be substantially uniform in the surface to be processed, in order to improve in-plane uniformity of polishing rate on thepolishing object 730. - However, in the above-mentioned CMP method, when the cross-sectional shape in a through-thickness direction of the
polishing object 730 is uniform, or has no waviness over the entire surface to be polished and is flat, polishing is performed so that polishing range has a certain thickness as shown inFIG. 7B . However, when thepolishing object 730 which has a cross-sectional shape in a through-thickness direction with waviness is polished, the surface of thepolishing object 730 cannot be polished according to the waviness. Thus, polishing thickness within the polishing range varies as shown inFIG. 7C . - Japanese Patent Publication No. 2000-263425 and Japanese Patent Publication No. 2002-246346 describe CMP apparatuses which can polish a wafer having a cross-sectional shape with waviness according to the waviness.
- The CMP apparatus described in Japanese Patent Publication No. 2000-263425 has a rotational axis orthogonal to a central axis of a rotating table (turn table), is provided with a tool holder movable in a direction parallel to the rotational axis by a linear movement mechanism, places a plurality of arc-like grind stones along an outer circumference of this tool holder, and individually controls forces for pressing these grind stones against a polishing object so as to follow the waviness.
- In addition, the apparatus described in Japanese Patent Publication No. 2000-246346 holds a wafer in a wafer holder while maintaining initial deformation and amount of warpage constant, includes a plurality of tubes for partially pressing a polishing pad depending on surface conditions such as unevenness on a surface of the wafer, and controls pressures applied by these respective tubes to uniformly polish in the surface of the wafer.
- However, all the above apparatuses have a disadvantage of complicated control mechanism.
- The presently disclosed embodiment is made to solve the above-mentioned problems and has an objective to provide a CMP method and CMP apparatus able to polish a polishing object having a cross-sectional shape with waviness according to the waviness and capable of attaining stable polish processing, using a relatively simple control mechanism.
- In order to achieve the above-mentioned objective, the chemical mechanical polishing apparatus in a first aspect of the presently disclosed embodiment is a chemical mechanical polishing apparatus, wherein a rotating head having a polishing pad mounted thereon whose contact area with a polishing object is smaller than surface area of the polishing object is pressed against and brought into contact with a surface of the polishing object mounted face up on a table, and is rotated with the table at rest while supplying slurry onto a contact surface to polish for a predetermined time, and then the rotating head is moved within the surface of the polishing object to polish the entire surface of the polishing object sequentially, comprising a pressure adjustment mechanism for maintaining a pressing load on the contact surface constant during polishing.
- In the chemical mechanical polishing apparatus of the presently disclosed embodiment, the pressure adjustment mechanism comprises a support shaft supporting the table along its central axis, a cylinder slidably holding the support shaft along the central axis, a pressure chamber having an air inlet and an air outlet and formed in the cylinder, and an air pressure adjustment means provided on the support shaft located in the pressure chamber.
- In the chemical mechanical polishing apparatus of the presently disclosed embodiment, the air pressure adjustment means comprises a separation wall separating the pressure chamber into a first pressure chamber having the air inlet and a second pressure chamber having the air outlet, and adjusts the amount of air moving from the first pressure chamber to the second pressure chamber through a minute opening provided in the separation wall or a clearance between the separation wall and an inner wall surface of the cylinder to control air pressure in the pressure chamber.
- In the chemical mechanical polishing apparatus of the presently disclosed embodiment, the pressure adjustment mechanism comprises an inner cylinder horizontally holding the table on its upper surface and having a pressure chamber formed therein, an outer cylinder slidably holding the inner cylinder along its central axis, a base having an air inlet and an air outlet and holding the outer cylinder, and an air pressure control unit adjusting the amount of air flowing in the air inlet and out the air outlet to control air pressure in the pressure chamber.
- In the chemical mechanical polishing apparatus of the presently disclosed embodiment, the table is removably attached to the support shaft.
- In the chemical mechanical polishing apparatus of the presently disclosed embodiment, the table is removably attached to the upper surface of the inner cylinder.
- In the chemical mechanical polishing apparatus of the presently disclosed embodiment, a nozzle for supplying slurry is placed close to the rotating head and supplies slurry while moving in synchronization with the movement of the rotating head.
- In the chemical mechanical polishing apparatus of the presently disclosed embodiment, a container capable of storing slurry is attached to the table.
- In the chemical mechanical polishing apparatus of the presently disclosed embodiment, a recess is provided near the center of a polishing object facing surface of the rotating head.
- In addition, the chemical mechanical polishing method in a second aspect of the presently disclosed embodiment is a chemical mechanical polishing method, wherein a rotating head having a polishing pad mounted thereon whose contact area with a polishing object is smaller than surface area of the polishing object is pressed against and brought into contact with a surface of the polishing object mounted face up on a table, and is rotated with the table at rest while supplying slurry onto a contact surface to polish for a predetermined time, and then the rotating head is moved within the surface of the polishing object to polish the entire surface of the polishing object sequentially, wherein a pressing load on the contact surface is maintained constant during polishing.
- In the chemical mechanical polishing method of the presently disclosed embodiment, the surface of the polishing object is divided into a plurality of regions to be polished, and the rotating head is sequentially pressed against and brought into contact with them to polish as polishing time is varied according to section thickness of each divided region to be polished.
- According to the chemical mechanical polishing apparatus and method of the presently disclosed embodiment, even though waviness exists on a surface to be polished of a polishing object, polishing according to the waviness is possible. Stable polish processing can therefore be attained.
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FIGS. 1A and 1B are perspective views showing a structure of main portions of the CMP apparatus according to the presently disclosed embodiment. -
FIG. 2 is a cross-sectional view showing an example of a pressure adjustment mechanism of the CMP apparatus according to the presently disclosed embodiment. -
FIG. 3 is a view showing a schematic structure of the CMP apparatus according to one aspect of the presently disclosed embodiment. -
FIG. 4 is a block diagram showing an example of the air pressure control unit shown inFIG. 3 . -
FIG. 5 is a cross-sectional view showing another aspect of the pressure adjustment mechanism of the CMP apparatus according to the presently disclosed embodiment. -
FIG. 6 is a schematic structure view of the CMP apparatus with the airpressure control unit 640 shown inFIG. 5 according to one aspect of the presently disclosed embodiment. -
FIGS. 7A-7C are perspective views showing a structure of main portions of a conventional CMP apparatus. -
FIG. 8 is a cross-sectional view showing a state where a slurry storage container is attached to a table. -
FIGS. 9A and 9B are cross-sectional views showing a structure of a slurryliquid attachment 800. -
FIG. 10 is a view showing a control mechanism of a rotatinghead 140. -
FIGS. 11A-11C are views showing a rotating head provided with a recess. - Preferred aspects of the presently disclosed embodiment will be described below by reference to the accompanying drawings.
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FIGS. 1A and 1B are perspective views showing a structure of main portions of theCMP apparatus 100 according to the presently disclosed embodiment. In the CMP apparatus according to the presently disclosed embodiment, apolishing object 130 which is uneven or has waviness on its surface and is a target for a wafer or resin mold is mounted on a table 120 with a surface to be polished faced upward (face up). Thus, considering that the area of the mounting surface of the table 120 is slightly larger than the surface area of thepolishing object 130 and thepolishing object 130 commonly used is a circular disc whose diameter is 4 inches, it is very small compared to the conventional CMP apparatus shown inFIGS. 7A-7C . - A rotating
head 140 having apolishing pad 110 mounted thereon is operated to be pressed against and brought into contact with the surface of thepolishing object 130. It should be noted that it is clearly shown inFIGS. 1A and 1B that the contact area between the rotatinghead 140 and thepolishing object 130 is sufficiently smaller than the surface area of the polishing object. Thus, the rotatinghead 140 having thepolishing pad 110 mounted thereon has only local contact with thepolishing object 130. Then, after polishing one contact surface of a contact portion by rotating the rotatinghead 140 for a predetermined time, the rotatinghead 140 is horizontally moved along X and Y axes by a predetermined distance to polish a different contact surface. In this manner, therotating head 140 is moved in the surface of the polishingobject 130 in the directions of X and Y axes to polish the entire surface sequentially. - Thus, in the CMP apparatus of the presently disclosed embodiment, polishing is performed by rotating and moving only the
rotating head 140 while the table 120 does not rotate and remains at rest. In addition, anozzle 150 which is close to therotating head 140 and supplies slurry onto a contact surface is placed, and thisnozzle 150 supplies slurry while moving in synchronization with the movement of therotating head 140. In this manner, the synchronization of the movement of thenozzle 150 and that of therotating head 140 makes it possible to supply slurry onto the contact surface efficiently. - The main feature of the presently disclosed embodiment is to reduce a contact surface and maintain a pressing load on the contact surface during polishing constant. This makes polishing amount in a thickness direction per a predetermined time over the entire contact surface constant.
- As seen above, the CMP apparatus of the presently disclosed embodiment is designed so that the area of the contact surface is considerably smaller than the surface area of the polishing
object 130. Thus, even with waviness on a surface of the polishingobject 130, the contact surface is placed along the waviness, which makes polishing amount constant. - As a result, polishing range can be maintained at a certain thickness along the waviness of the polishing object, as shown in
FIG. 1B . - As described above, the presently disclosed embodiment divides the surface of the polishing object into a plurality of regions to be polished and polishes them sequentially with a certain load for a predetermined time, however, some unevenness in section thickness may be caused depending on the degree of waviness of the polishing object.
- In this case, polishing time should be varied in response to the section thickness. As mentioned above, the CMP apparatus of the presently disclosed embodiment has the main feature of maintaining a load on a contact surface (hereinafter referred to as a local load) constant. Next, an aspect of a pressure adjustment mechanism for realizing such a feature will be described.
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FIG. 2 is a cross-sectional view showing an aspect of a pressure adjustment mechanism of the CMP apparatus according to the presently disclosed embodiment. The pressure adjustment mechanism shown inFIG. 2 has asupport shaft 160 supporting a table 120 along itscentral axis 122, acylinder 200 slidably holding thissupport shaft 160 along thecentral axis 122, and a base 250 on which thiscylinder 200 is fixedly placed. The center of thecylinder 200 is provided with a throughhole 240 for slidably moving thesupport shaft 160 up and down and thebase 250 is also provided with anopening 242 for receiving thesupport shaft 160 by its bottom end. Thesupport shaft 160 can slide up and down since it is sandwiched and supported betweenbearings cylinder 200. Apressure chamber 210 having anair inlet 202 and anair outlet 204 is formed in thecylinder 200. - The
pressure chamber 210 is separated into afirst pressure chamber 206 having theair inlet 202 and asecond pressure chamber 208 having theair outlet 204. A separation wall for this separation can be formed by providing a part of thesupport shaft 160 located in thepressure chamber 210 with a first shaft diameter expandedportion 162 and a second shaft diameter expandedportion 164 and bringing an outer diameter portion of the second shaft diameter expandedportion 164 into slidable contact with an inner wall surface of thepressure chamber 210. This second shaft diameter expandedportion 164 is formed thinly and has one ormore minute openings 166 whose each diameter is about 100 μm formed therein. It should be noted that thisopening 166 is not indispensable if a prescribed clearance is provided between the second shaft diameter expandedportion 164 and the inner wall surface of thecylinder 200. - In the
cylinder 200 configured as described, when compressedair 260 of a predetermined air pressure flows in thefirst pressure chamber 206 through theair inlet 202, the air then flows into thesecond pressure chamber 208 through theopening 166 and flows out through theair outlet 204. Thesupport shaft 160 is pushed upward by a pressure difference between thefirst pressure chamber 206 and thesecond pressure chamber 208 which difference is caused because theopening 166 is minute, and rests at a position which balances gravity of total mass of thesupport shaft 160 and the table 120 supported thereby. This rest position is determined by the pressure of thecompressed air 260 flowing in theair inlet 202. - Hence if the lower surface of the
rotating head 140 is controlled so as to be set below a raised position of the table 120, it is pressed against and brought into contact with the table 120 with a certain load determined by the pressure of thecompressed air 260. - A certain load required for polishing can be set by controlling the pressure of the compressed air.
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FIG. 3 is a view showing a schematic structure of the CMP apparatus according to one aspect of the presently disclosed embodiment. It should be noted that same elements as shown inFIGS. 1A , 1B, andFIG. 2 are given same reference numerals and a detailed description thereof will be left out. - The CMP apparatus of the presently disclosed embodiment is provided with an up-and-down/movement/
rotation control unit 302 for controlling up-and-down/movement/rotation of therotating head 140, aslurry supply unit 304 for supplying slurry to thenozzle 150, an airpressure control unit 306 for controlling air pressure of thecompressed air 260, apressure sensor 308 for detecting a pressing load on the contact surface, and amain control unit 310 for controlling the up-and-down/movement/rotation control unit 302, theslurry supply unit 304, and the airpressure control unit 306. - The up-and-down/movement/
rotation control unit 302 is to control a stop position of therotating head 140, an amount or timing of movement in X-Y directions, and the number of rotations of therotating head 140, and controls them by sending acontrol command 402 to therotating head 140 based on acontrol command 404 from themain control unit 310. - The
slurry supply unit 304 is to control to supply slurry while moving thenozzle 150 in synchronization with the movement of therotating head 140, and controls thenozzle 150 based on acontrol command 408 from themain control unit 310. - The air
pressure control unit 306 is to control air pressure of thecompressed air 260 supplied to theair inlet 202, and controls it based on acontrol command 410 from themain control unit 310. - In the presently disclosed embodiment, the pressure adjustment mechanism shown in
FIG. 2 is operated so as to maintain a pressing load on the contact surface between thepolishing pad 110 and the polishingobject 130 at a predetermined constant value and the pressing load after operation can be measured with, for example, apressure sensor 308 provided at a desired position of therotating head 140. Then, themain control unit 310 sends acontrol command 410 to the airpressure control unit 306 based on apressure signal 406 from thepressure sensor 308 so that this pressure signal becomes a predetermined value and thereby the airpressure control unit 306 adjusts air pressure of thecompressed air 260. -
FIG. 4 is a block diagram showing an example of the airpressure control unit 306. - The air
pressure control unit 306 includes apressure control circuit 450 which operates receiving thecontrol command 410 from themain control unit 310, apressure source 420, avalve 430, and apressure gauge 440. For example, thepressure source 420 is a bottle of compressed air. Compressed air from thepressure source 420 passes through thevalve 430 and thepressure gauge 440, becomes thecompressed air 260 for supply, and is supplied to theair inlet 202. Thepressure control circuit 450 adjusts an opening/closing amount of thevalve 430 based on a measured value by thepressure gauge 440 to control air pressure of thecompressed air 260 for supply to a desired level. -
FIG. 5 is a cross-sectional view showing another aspect of a pressure adjustment mechanism of the CMP apparatus according to the presently disclosed embodiment. The pressure adjustment mechanism shown inFIG. 5 has aninner cylinder 610 which horizontally holds the table 120 on itsupper surface 612 and has apressure chamber 600 formed therein, anouter cylinder 620 which slidably holds thisinner cylinder 610 along itscentral axis 122, a base 630 which has anair inlet 602 and anair outlet 604 and holds theouter cylinder 620 by a lower part, and an airpressure control unit 640 which controls air pressure in thepressure chamber 600 by adjusting an amount of the air flowing in the air inlet 602 (Air IN) and out the air outlet 604 (Air OUT). - The outer wall surface of the
inner cylinder 610 is brought into slidable contact with the inner wall surface of theouter cylinder 620. - In the pressure adjustment mechanism configured as described, when compressed air of a predetermined air pressure flows in the
pressure chamber 600 through theair inlet 602 via the airpressure control unit 640, the air pressure in thepressure chamber 600 increases according to an amount of air flowing out theair outlet 604. - The
inner cylinder 610 is pushed upward due to the increase in air pressure and rests at a position which balances gravity of total mass of theinner cylinder 610 and the table 120 held thereby. This rest position is determined by the air pressure in thepressure chamber 600. - Hence, if the lower surface of the
rotating head 140 is controlled so as to be set below a raised position of the table 120, it is pressed against and brought into contact with the table 120 with a certain load determined by the air pressure in thepressure chamber 600. - As described above, a certain load required for polishing can be set by controlling the air pressure in the
pressure chamber 600 with the airpressure control unit 640. -
FIG. 6 is a view showing a schematic structure of the CMP apparatus with the airpressure control unit 640 shown inFIG. 5 according to one aspect of the presently disclosed embodiment. It should be noted that same elements as shown inFIG. 5 are given same reference numerals and a detailed description thereof will be left out. - The air
pressure control unit 640 includes acompression pump 642 which compresses air from the outside to produce compressed air, anair valve 644 which adjusts an amount of compressed air to be supplied, a mass flow controller (MFC) 646 which controls a flow rate of the compressed air flowing in anair inlet 602, aneedle valve 648 which is connected to anair outlet 604 and controls an amount of air flow, and apressure relief valve 650. Controlling the opening of theneedle valve 648 by acontrol command 646 a from theMFC 646 makes it possible to maintain a flow rate of the compressed air flowing in the air inlet at a predetermined value, control the air pressure in thepressure chamber 600 to a desired level, and obtain a certain load required. - It should be noted that although the table 120 is fixedly attached to the
support shaft 160 or theupper surface 612 of theinner cylinder 610 in the above-described embodiment, the table 120 can be attached removably. - In addition, slurry is supplied from the
slurry supply unit 304 through thenozzle 150 in the above-described embodiment, but the polishingobject 130 can be polished in a state of being constantly immersed in slurry. -
FIG. 8 is a cross-sectional view showing polishing in a state where a slurry storage container is attached to the table 120. - A
container 500 capable of storing slurry is attached to the table 120 or thesupport shaft 160 and polishing is performed in thecontainer 500 filled withslurry 550. -
FIGS. 9A and 9B are cross-sectional views showing a structure of aslurry liquid attachment 800 in which thecontainer 500 capable of storing slurry is attached to a removable table 120. - The table 120 must have a predetermined thickness and its upper and lower surfaces must have sufficient flatness. In order to removably mount the
slurry liquid attachment 800 on theupper surface 612 of theinner cylinder 610 shown inFIG. 5 or thesupport shaft 160 shown inFIG. 2 , pins 802 as shown inFIG. 9A are inserted into insertion openings (not shown) provided on theupper surface 612 of theinner cylinder 610, or ascrew hole 804 as shown inFIG. 9B is engaged with a male screw (not shown) provided on the top of thesupport shaft 160. - Polishing amount can be controlled by changing a concentration, particle diameter, or material of the slurry liquid according to the nature of a film to be polished or polishing amount.
- Exchange of the slurry liquid can be easily performed by changing the
attachment 800. It can also be performed by sucking out the currently-used slurry liquid and replacing it with slurry liquid of a different concentration, particle diameter, or material. -
FIG. 10 is a view showing a control mechanism of therotating head 140. - The
rotating head 140 is attached to a highspeed rotary motor 170, which is attached to a 3-axis (X, Y, Z) control robot. - The 3-
axis control robot 180 controls rotation and movement in axial directions of therotating head 140. - Attaching the
rotating head 140 to the highspeed rotary motor 170 clampedly makes it easy to replace therotating head 140 according to polishing conditions. In addition, preparing the necessary number of 3-axis control robots 180 makes it possible to replace the 3-axis control robot 180 entirely. - It should be noted that controlling factors on polishing according to the presently disclosed embodiment include the following:
-
- 1) Retention time of the rotating head on a contact surface;
- 2) Concentration, particle diameter, and material of the slurry liquid;
- 3) Pressing load;
- 4) Material of the rotating head and shape of a contact surface; and
- 5) Rotational and horizontal movement speeds of the rotating head
- Controlling each of these factors appropriately makes it possible to realize a desired polishing.
- In addition, the reason is uncertain, but an observation result by the present inventors revealed that the surface of the polishing
object 130 could be polished more uniformly along waviness by providing arecess 145 near the center of a polishingobject facing surface 147 of therotating head 140 as shown inFIG. 11A . - It is presumed that this is either because a pressing load applied to the polishing pad decreases at the
recess 145 or because slurry easily collects at therecess 145, but details are unknown. - When polishing was performed using the
rotating head 140 which has ahole 148 opened near the center and is provided withconnection holes 149 reaching thehole 148 from the side wall as shown inFIG. 11B , it was found that the polishing could be performed more uniformly. This seems to be because the rotation of therotating head 140 makes the inside of thehole 148 negative pressure to suck out the slurry. - In addition, when the polishing surface of the
rotating head 140 was provided with connectinggrooves 144 connecting toward therecess 145 near the center as shown inFIG. 11C , the similar result could be obtained. - This is considered to be because the slurry is taken more due to the connecting
grooves 144. - As above, the presently disclosed embodiment has been described based on the aspects, but it is not limited thereto.
- It is obvious to one having ordinary skill in the art that the pressure adjustment mechanism used in the presently disclosed embodiment may be variously modified. For example, the above-described aspect is designed to provide a pressure sensor and feed back a pressure signal from this pressure sensor to adjust air pressure, but the magnitude of the pressing load set once may be designed not to have to be changed during polishing without using the pressure sensor. In addition, providing a mechanism to tilt the rotating head along waviness makes it possible to uniformly polish more accurately along the waviness.
- In addition, the area of the contact surface of the rotating head may be adjusted, depending on the period of the waviness, so as to be large when the period is long or to be small when the period is short. The presently disclosed embodiment can be preferably applied to a mirror finish of a mold, or release of a thin film of up to 100 nm in film thickness.
- In addition, it can be applied not only to a surface finish of a three-dimensional structure, lens, and an object fabricated by stereo lithography but also to such as a spherical silicon or nanoimprinting.
-
-
- 110: Polishing pad
- 120: Table
- 130: Polishing object
- 140: Rotating head
- 145: Recess
- 150: Nozzle
- 160: Support shaft
- 162: First shaft diameter expanded portion
- 164: Second shaft diameter expanded portion
- 166: Minute opening
- 200: Cylinder
- 202: Air inlet
- 204: Air outlet
- 210: Pressure chamber
- 500: Container
- 550: Slurry
- 600: Pressure chamber
- 610: Inner cylinder
- 620: Outer cylinder
- 630: Base
- 640: Air pressure control unit
Claims (11)
1. A chemical mechanical polishing apparatus, comprising a rotating head having a polishing pad mounted thereon whose contact area with a polishing object is smaller than surface area of the polishing object is pressed against and brought into contact with a surface of the polishing object mounted face up on a table, and is rotated with the table at rest while supplying slurry onto a contact surface to polish for a predetermined time, and then the rotating head is moved within the surface of the polishing object to polish the entire surface of the polishing object sequentially, further comprising a pressure adjustment mechanism for maintaining a pressing load on the contact surface constant during polishing.
2. The chemical mechanical polishing apparatus according to claim 1 , wherein the pressure adjustment mechanism comprises: a support shaft supporting the table along its central axis; a cylinder slidably holding the support shaft along the central axis; a pressure chamber having an air inlet and an air outlet and formed in the cylinder; and an air pressure adjustment means provided on the support shaft located in the pressure chamber.
3. The chemical mechanical polishing apparatus according to claim 2 , wherein the air pressure adjustment means comprises a separation wall separating the pressure chamber into a first pressure chamber having the air inlet and a second pressure chamber having the air outlet, and adjusts the amount of air moving from the first pressure chamber to the second pressure chamber through a minute opening provided in the separation wall or a clearance between the separation wall and an inner wall surface of the cylinder to control air pressure in the pressure chamber.
4. The chemical mechanical polishing apparatus according to claim 1 , wherein the pressure adjustment mechanism comprises: an inner cylinder horizontally holding the table on its upper surface and having a pressure chamber formed therein;
an outer cylinder slidably holding the inner cylinder along its central axis; a base having an air inlet and an air outlet and holding the outer cylinder; and an air pressure control unit adjusting the amount of air flowing in the air inlet and out the air outlet to control air pressure in the pressure chamber.
5. The chemical mechanical polishing apparatus according to claim 2 , wherein the table is removably attached to the support shaft.
6. The chemical mechanical polishing apparatus according to claim 4 , wherein the table is removably attached to the upper surface of the inner cylinder.
7. The chemical mechanical polishing apparatus according to claim 1 , wherein a nozzle for supplying slurry is placed close to the rotating head and supplies slurry while moving in synchronization with the movement of the rotating head.
8. The chemical mechanical polishing apparatus according to claim 1 , wherein a container capable of storing slurry is attached to the table.
9. The chemical mechanical polishing apparatus according to any of claim 1 , wherein a recess is provided near the center of a polishing object facing surface of the rotating head.
10. A chemical mechanical polishing method, comprising a rotating head having a polishing pad mounted thereon whose contact area with a polishing object is smaller than surface area of the polishing object is pressed against and brought into contact with a surface of the polishing object mounted face up on a table, and is rotated with the table at rest while supplying slurry onto a contact surface to polish for a predetermined time, and then the rotating head is moved within the surface of the polishing object to polish the entire surface of the polishing object sequentially, further comprising a pressing load on the contact surface is maintained constant during polishing.
11. The chemical mechanical polishing method according to claim 10 , wherein the surface of the polishing object is divided into a plurality of regions to be polished, and the rotating head is sequentially pressed against and brought into contact with them to polish as polishing time is varied according to section thickness of each divided region to be polished.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2013/000917 WO2014128754A1 (en) | 2013-02-19 | 2013-02-19 | Cmp apparatus and cmp method |
Publications (1)
Publication Number | Publication Date |
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US20160001418A1 true US20160001418A1 (en) | 2016-01-07 |
Family
ID=50396574
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US14/768,112 Abandoned US20160001418A1 (en) | 2013-02-19 | 2013-02-19 | Cmp apparatus and cmp method |
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US (1) | US20160001418A1 (en) |
JP (1) | JP5432421B1 (en) |
KR (1) | KR20150121029A (en) |
CN (1) | CN105009257A (en) |
TW (1) | TW201501861A (en) |
WO (1) | WO2014128754A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US10124855B2 (en) | 2016-11-14 | 2018-11-13 | Lee Chi Enterprises Company Ltd. | Disc brake caliper of bicycle |
CN112440203B (en) * | 2019-09-03 | 2022-04-05 | 芯恩(青岛)集成电路有限公司 | Wafer grinding system and wafer grinding method |
CN113547445B (en) * | 2020-04-03 | 2023-03-24 | 重庆超硅半导体有限公司 | Method for accurately monitoring center pressure of polishing head |
WO2023101842A1 (en) * | 2021-11-30 | 2023-06-08 | Corning Incorporated | Localized polishing fixture and processes of using the same |
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Also Published As
Publication number | Publication date |
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KR20150121029A (en) | 2015-10-28 |
WO2014128754A1 (en) | 2014-08-28 |
JPWO2014128754A1 (en) | 2017-02-02 |
CN105009257A (en) | 2015-10-28 |
TW201501861A (en) | 2015-01-16 |
JP5432421B1 (en) | 2014-03-05 |
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