US20160013270A1 - Semiconductor device and manufacturing method thereof - Google Patents
Semiconductor device and manufacturing method thereof Download PDFInfo
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- US20160013270A1 US20160013270A1 US14/796,708 US201514796708A US2016013270A1 US 20160013270 A1 US20160013270 A1 US 20160013270A1 US 201514796708 A US201514796708 A US 201514796708A US 2016013270 A1 US2016013270 A1 US 2016013270A1
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- 238000004519 manufacturing process Methods 0.000 title abstract description 16
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
Abstract
A Si-on-half-insulator device and its manufacturing method are disclosed in this invention. In one embodiment, a horizontal insulating layer located below at least one of the source and drain regions is realized to reduce junction capacitance. In another embodiment, a horizontal insulating layer located below at least one of the source and drain regions and a vertical insulating layer located below at least one side surface of the gate are realized. The additional vertical insulating layer can reduce punch leakage. Further, a method of manufacturing the above semiconductor device is also disclosed, wherein the horizontal and vertical insulating layers are formed using an additional layer of epitaxially grown semiconductor material and isolating trenches.
Description
- This application is a divisional application from, and claims the benefit of, U.S. patent application Ser. No. 13/244,054 to Liu and entitled “SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF,” which claims the priority of Chinese Patent Application No. 201110153290.X, filed on Jun. 9, 2011, also entitled “SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF,” which is incorporated herein by reference in its entirety.
- 1. Field of the Invention
- The present invention relates to semiconductor device and manufacturing method thereof, and more particularly, to a semiconductor device on semi-SOI (silicon on insulator) and a manufacturing method thereof.
- 2. Description of the Related Art
- One important property of high performance semiconductor devices is their conductivity. It has been known that current is inversely proportional to resistance. Traditionally, resistivity of an electronic device can be reduced, and therefore, current can be increased, through increasing sectional size of semiconductor material, shortening electron channel length, increasing voltage, or reducing resistivity of semiconductor material.
- In order to manufacture integrated circuits (IC) having higher integration than those of the prior art, such as memory, logic circuit and the like, many efforts have been taken to further reduce the size of field effect transistors (FET), such as metal-oxide-semiconductor field effect transistors (MOSFET) and complementary metal oxide semiconductor field effect transistors (CMOS). Through decreasing the total size of a device and lowering operation voltage while maintaining electrical properties of the device, the device can be made more compact and its performance can be improved. Furthermore, in order to optimize various electrical properties of the device, the sizes of all elements in a device must be decreased in proportion at the same time.
- However, with such smaller semiconductor devices, as shown in
FIG. 4 , source-drain junction parasitic capacitance is becoming larger. On the other hand, channel size may become smaller correspondingly, and therefore, source to drain punch leakage is more liable to occur. Moreover, for the downsized devices, the influence of short channel effects is more notable. - Therefore, there is need for a new semiconductor device.
- According to a first aspect of the present invention, there is provided a semiconductor device, which may comprise: a gate on a substrate; source and drain regions located on opposite sides of the gate; a horizontal insulating layer substantially parallel to the surface of the substrate and arranged below at least one of the source and drain regions.
- Preferably, the device may further comprise a vertical insulating layer substantially vertical to the surface of the substrate and arranged below a side surface of the gate.
- Preferably, the vertical insulating layer is lower than the source and drain regions.
- Preferably, the device may further comprise isolating trenches arranged on one side of the source and drain regions far way from the gate.
- Preferably, the horizontal insulating layer intersects with the isolating trenches.
-
- According to a second aspect of the present invention, there is provided a method of manufacturing a semiconductor device, which may comprise the following steps: providing a substrate of a first semiconductor material, forming a protrusion with an expected height on the substrate, and providing a cap-shaped mask covering the top of the protrusion and its sidewalls; growing a layer of second semiconductor material on the substrate at opposite sides of the protrusion; removing a portion of the cap-shaped mask to expose the sidewalls of the protrusion; epitaxially growing the first semiconductor material on the second semiconductor material layer, such that the first semiconductor material grown is flush with the protrusion; removing the remaining portion of the mask; forming isolating trenches on the substrate such that the isolating trenches intersect with the second semiconductor material layer; selectively removing the second semiconductor material layer through the isolating trenches; forming a horizontal insulating layer at the location where the second semiconductor material layer is removed through the isolating trenches.
- According to a third aspect of the present invention, there is provided a method of manufacturing a semiconductor device, which may comprise the following steps: providing a substrate of a first semiconductor material, forming a protrusion and providing a cap-shaped mask covering the top of the protrusion and its sidewalls; etching the substrate with a mask to an expected depth, so as to expose the sidewalls of a portion of the substrate below the protrusion; forming an insulating layer, the insulating layer having a vertical portion on a sidewall of the portion of the substrate and having a horizontal portion on the substrate at opposite sides of the protrusion; removing the horizontal portion of the insulating layer while removing a first part of the mask; epitaxially growing a horizontal layer of a second semiconductor material on the substrate at opposite sides of the protrusion; removing a second part of the mask to expose the sidewalls of the protrusion; selectively removing the vertical portion of the insulating layer; growing the first semiconductor material on the second semiconductor material layer so that the first semiconductor material grown is flush with the protrusion; removing a third part of the mask; forming insulting trenches such that the insulting trenches intersect with the second semiconductor material layer; selectively removing the second semiconductor material layer through the isolating trenches; forming a horizontal insulating layer at the location where the second semiconductor material layer is removed through the isolating trenches.
- According to the third aspect of the present invention, preferably, after removing the second part of the mask to expose the sidewalls of the protrusion, the method may further comprise: using the vertical portion of the insulating layer as the vertical insulating layer; growing the first semiconductor material on the second semiconductor material layer such that the first semiconductor material grown is flush with the protrusion; forming the isolating trenches on the substrate to intersect with the second semiconductor material layer; removing the third part of the mask; selectively removing the second semiconductor material layer through the isolating trenches, and then forming a horizontal insulating layer at the location where the second semiconductor material layer is removed through the isolating trenches.
- According to the second or the third aspect of the present invention, preferably, the mask comprises a first portion of the horizontal oxide insulating layer, a second portion of cap-shaped nitride insulting layer and a third portion of the horizontal oxide insulating layer.
- According to the second or the third aspect of the present invention, preferably, the isolating trenches are filled after forming the horizontal insulating layer.
- According to the second or the third aspect of the present invention, preferably, the horizontal insulating layer is formed with a thermal oxidization process through the isolating trenches.
- According to the second or the third aspect of the present invention, preferably, after forming the horizontal insulating layer, the method further comprises the following steps: forming a gate on the generated structure; forming source and drain regions on opposite sides of the gate.
- According to the second or the third aspect of the present invention, preferably, the method comprises forming the cap-shaped mask on the substrate, which may further comprise: forming an oxide insulating layer, a nitride insulating layer and an oxide insulating layer on the substrate in sequence; etching to form the protrusion on the substrate; depositing a nitride insulating layer; carrying out dry etch to remove the deposited nitride insulating layer while retaining the nitride insulating layer on the sidewalls of the protrusion, thereby forming the cap-shaped mask and the protrusion covered by the cap-shaped mask.
- According to the second or the third aspect of the present invention, preferably, the first semiconductor material is Si and the second semiconductor material is SiGe.
- According to the second aspect of the present invention, preferably, the expected height of the protrusion is the depth of the source and drain regions.
- According to the third aspect of the present invention, preferably, the step of etching the substrate using a mask to the expected depth so as to expose the sidewalls of a portion of the substrate below the protrusion comprises: etching the substrate using the mask to the expected depth of the source or drain region.
- According to the third aspect of the present invention, preferably, the horizontal and vertical layers are oxide insulating layers.
- The present invention will be better understood when reading the following detailed description with reference of drawings, and like references refer to similar elements, in which:
-
FIGS. 1A-1M schematically show the method of manufacturing a semiconductor device according to a first embodiment of this invention; -
FIGS.2A-2Q schematically show the method of manufacturing a semiconductor device according to a second embodiment of this invention; -
FIGS.3A-3F schematically show the method of manufacturing a semiconductor device according to a third embodiment of this invention; and -
FIG. 4 shows a semiconductor device of the prior art. - Note that, for conciseness and clarity, elements are not necessarily illustrated in proportion in those drawings. For example, for facilitating and improving clarity and understanding, some elements are enlarged in size with respect to others. Further, in those drawings, replicated references are used to denote corresponding or like elements.
- Various specific embodiments of the present invention will now be described by way of examples with reference of drawings.
- Referring to
FIG. 1A , asemiconductor substrate 100 of a first semiconductor material is provided (hereinafter referred to assubstrate 100 for short), and the first semiconductor material is for example Si. Anoxide insulating layer 110 is formed on thesubstrate 100, which may be formed from, for example, SiO2. Upon forming the structure shown inFIG. 1A , a photoresist is applied thereon, and the photoresist is patterned using a photomask (not shown) by photolithography, and then, as shown inFIG. 1B , thesubstrate 100 and theoxide insulating layer 110 are etched to form a protrusion with expected height in thesubstrate 100. As described below, the expected height will be the expected depth of the source and drain regions to be formed. Therefore, the expected height can be selected based on various applications by those skilled in the art after reading the teachings herein. - Next, as shown in
FIG. 1C , anitride insulating layer 120 is deposited on the semiconductor structure ofFIG. 1B . Thenitride insulating layer 120 may be formed by, for example, SiN. Obviously, any other suitable oxides, nitrides and/or combinations thereof can be used by those skilled in the art for theoxide insulating layer 110 and thenitride insulating layer 120 herein. - As shown in
FIG. 1D , portions of thenitride insulating layer 120 located on the top of and opposite sides of the protrusion are removed through selective etching, so as to form a cap-shaped insulating layer covering the top and sidewalls of the protrusion which is consisted of theoxide insulating layer 110 and thenitride insulating layer 120. It will become clear from the following description that this cap-shaped insulating layer will be used as a mask. - As shown in
FIG. 1E , a secondsemiconductor material layer 130 is grown on thesubstrate 100 of the first semiconductor material. Herein, the second semiconductor material is, for example, SiGe. Although the first semiconductor material is specified as Si and the second semiconductor material is specified as SiGe by way of example, those skilled in the art will appreciate, however, any other semiconductor materials can be adopted so long as they are capable of epitaxial growth with each other. For example, the first semiconductor material can be SiGe or Ge, and the second semiconductor material can be Si. As discussed below, the thickness of the finally formed insulating layer is determined by the thickness of thesecond semiconductor material 130. Hence, those skilled in the art can select the thickness of the secondsemiconductor material layer 130 to achieve expected effects. In one embodiment, the secondsemiconductor material layer 130 can be 5-500 nm thick. - Next, as shown in
FIG. 1F , the residual of thenitride insulating layer 120 is removed through, for example, wet etching, so as to expose the sidewalls of the protrusion. - Referring to
FIG. 1G , the first semiconductor material is epitaxially grown on the structure shown inFIG. 1F such that the first semiconductor material grown is flush with the protrusion. - Referring to
FIG. 1H , theoxide insulating layer 110 is removed from the semiconductor structure ofFIG. 1F . For example, theoxide insulating layer 110 can be removed through dry etching. Next, isolatingtrenches 140 are formed on both sides of the semiconductor structure, which can be used for forming Shallow Trench Isolation (STI). As known by those skilled in the art, STI is usually used to isolate multiple devices on a single semiconductor substrate. In this invention, the depth of the isolatingtrenches 140 is selected so that they can intersect with the secondsemiconductor material layer 130. - In
FIG. 1I , an etchant is introduced through the isolatingtrenches 140 and the secondsemiconductor material layer 130 is selectively etched off. For example, the secondsemiconductor material layer 130 of SiGe can be removed through wet etching. - In
FIG. 1J , a horizontal insulatinglayer 150 is formed through thermal oxidization at the position where thesemiconductor material layer 130 originally existed. As mentioned above, the thickness of the horizontal insulatinglayer 150 depends on the grown thickness of the original secondsemiconductor material layer 130. Therefore, as described below, those skilled in the art can select the thickness of the horizontal insulatinglayer 150 to achieve expected benefit effects. - Referring to
FIG. 1K , as known by those skilled in the art, the isolatingtrenches 140 are filled, and agate 160 and a gate insulating layer (not shown) are formed on the resulting semiconductor structure. - As shown in
FIG. 1L , LDD lightly doping is carried out using thegate 160 as a mask. - As shown in
FIG. 1M ,spaces 180 are formed on opposite sides of thegate 160, and a further source/drain doping is carried out to accomplish the manufacture of the device. - It will be appreciated that the present embodiment focuses on the process and method of forming a horizontal insulating layer in a semiconductor device. For conciseness, one or more steps that are not relative to the subject of this invention are simply described or omitted. However, those skilled in the art can fully understand how to form a horizontal insulating layer in a semiconductor substrate through the disclosure and teachings herein.
- As the semiconductor device shown in
FIG. 1M , since the insulating layer has a dielectric constant smaller than Si, the horizontal insulatinglayer 150 between thesource region 170, thedrain region 171 and a portion of the substrate is helpful to reduce parasitic junction capacitance. Since the horizontal insulatinglayer 150 does not extend through the whole substrate, but are located below thesource region 170 and thedrain region 171 respectively, this device thus is so-called “semi-SOI” device. -
FIG. 1M shows the preferred embodiment of this invention. Those skilled in the art will appreciate the horizontal insulatinglayer 150 only need to be located below one of thesource region 170 and thedrain region 171, the reduced the junction capacitance between the corresponding region and thesubstrate 100 can be achieved. With respect to the process, consequently, at the step ofFIG. 1E , the horizontal insulatinglayer 150 can be located only below thesource region 170 or thedrain region 171 through removing the secondsemiconductor material layer 130 on the corresponding side in photolithography. According to this invention, the object of this invention, that is, to reduce parasitic junction capacitance between the source or drain region and the substrate, can be achieved, even if the horizontal insulatinglayer 150 is only formed on one side of the protrusion. - The second embodiment of this invention will be described with reference to
FIGS. 2A-2Q . - As shown in
FIG. 2A , asemiconductor substrate 200 of a first semiconductor material is provided (hereinafter called as substrate 200), the first semiconductor material may be, for example, Si. Anoxide insulating layer 210, anitride insulating layer 220 and anoxide insulating layer 230 are formed in sequence on thesubstrate 200. It will be appreciated that theoxide insulating layer 210, nitride insulatinglayer 220 andoxide insulating layer 230 herein can be formed by any suitable oxides and nitrides. For example, theoxide insulating layers nitride insulating layer 220 can be formed by, for example, SiN. Obviously, those skilled in the art can use any other suited oxides, nitrides and/or combinations thereof to realize theoxide insulating layer 210, nitride insulatinglayer 220 andoxide insulating layer 230. - Upon forming the structure shown in
FIG. 2A , a photoresist is applied thereon and is patterned through photolithography using a photomask (not shown), then the semiconductor structure shown inFIG. 2A is etched, as such a protrusion having an expected height is formed on thesubstrate 200. Upon the etching, portions of thesubstrate 200 are exposed on both sides of the protrusion, and theoxide insulating layer 210, nitride insulatinglayer 220 andoxide insulating layer 230 are located on top of the protrusion, as shown inFIG. 2B . - Next, referring to
FIG. 2C , anitride insulating layer 240 is deposited on the structure ofFIG. 2B . As shown inFIG. 2C , thenitride insulating layer 240 covers the exposed portions of the substrate, as well as the protrusion. - In
FIG. 2D , a portion of thenitride insulating layer 240 located on the top of and opposite sides of the protrusion is removed through dry etching, so as to maintain portions ofnitride insulating layer 240 covering the sidewalls of the protrusion. InFIG. 2D , a cap-shaped structure covering the protrusion is formed. As will be clear in connection with the following description, the cap-shaped structure will be used as a mask. - As shown in
FIG. 2E , thesubstrate 200 is further etched to an expected depth using the cap-shaped structure inFIG. 2D as a mask, thus the sidewalls of portions of thesubstrate 200 located below the protrusion are exposed. As will be clear in connection with the following description, the distance from the substrate surfaces on opposite sides of the protrusion after etching to the top surface of the protrusion will become the depth of the source and drain regions. Therefore, those skilled in the art can select the depth to be etched inFIGS. 2B and 2E based on various applications, thereby selecting the depth of the source and drain regions. - As shown in
FIG. 2F , anoxide layer 250 is formed on the exposed surface of the substrate and the substrate surfaces on opposite sides of the protrusion through thermal oxidization. As shown, theoxide layer 250 includes vertical portions located on the exposed substrate sidewalls and horizontal portions located on the substrate on opposite sides of the protrusion. - As shown in
FIG. 2G , the horizontal portions of theoxide insulating layer 250 and a portion of theoxide insulating layer 230 located on top of the protrusion are selectively etched off. Upon etching to remove theoxide insulating layer 250 on opposite sides of the protrusion, a part ofsubstrate 200 is exposed on both sides of the protrusion. Preferably, theoxide insulating layers - As shown in
FIG. 2H , a secondsemiconductor material layer 260 is epitaxially grown on the exposed portions of thesubstrate 200. Herein, the second semiconductor material can be, for example, SiGe. As will be clear in connection with the following description, the thickness of the secondsemiconductor material layer 260 grown will determine the thickness of the horizontal insulating layer to be formed later. Therefore, those skilled in the art can select the thickness of the secondsemiconductor material layer 260 to be grown, so as to meet different application requirements. - As shown in
FIG. 2I , nitride insulating layers of the cap-shaped mask are selectively removed, for example, thenitride insulating layers nitride insulating layers - As shown in
FIG. 2J , based on the semiconductor structure ofFIG. 2I , the verticaloxide insulating layer 250 is selectively removed through wet etching. After the steps ofFIGS. 2I and 2J , the sidewalls of the protrusion of the substrate are exposed. - As shown in
FIG. 2K , a first semiconductor material is epitaxially grown on the semiconductor structure ofFIG. 2J such that the first semiconductor material grown is flush with the protrusion. As mentioned before, the first semiconductor material can be, for example, Si. - As shown in
FIG. 2L , the last part of the cap-shaped mask, i.e., theoxide insulating layer 210 of the cap-shaped mask, is removed. - Next, as shown in
FIG. 2M , isolatingtrenches 270 are formed on opposite sides of the resultant semiconductor structure. In this invention, the depth of the isolatingtrenches 270 is selected so that isolatingtrenches 270 can intersect with the secondsemiconductor material layer 260. - In
FIG. 2N , an etchant is introduced through the isolatingtrenches 270 to selectively etch off the secondsemiconductor material layer 260. For example, the secondsemiconductor material layer 260 formed of, for example SiGe, can be removed through wet etching. - In
FIG. 2O , a horizontal insulatinglayer 280 is formed at the position where thesemiconductor material layer 260 originally existed through thermal oxidization. As mentioned above, the thickness of the horizontal insulatinglayer 280 is determined by the grown thickness of the original secondsemiconductor material layer 260. Therefore, those skilled in the art can select the thickness of the horizontal insulatinglayer 280 to achieve expected benefit effects. - Referring to
FIG. 2P , isolatingtrenches 270 are filled as known by those skilled in the art. - As shown in
FIG. 2Q , a gate and a gate insulating layer (not shown) are formed on the resultant semiconductor structure. Source and drain regions are formed on opposite sides of the gate through doping. The above steps are similar to those shown inFIGS. 1K-1M , and are not repeated herein. - Similar to the first embodiment, the second embodiment also provides a method of manufacturing semi-SOL Similarly, the preferable implementation of this invention is shown in
FIG. 2Q . Those skilled in the art can fully appreciate that the horizontal insulatinglayer 280 only needs to be located below one of the source and drain regions, then the corresponding junction capacitance can be reduced. With respect to its process, consequently, at the step ofFIG. 2G , the horizontal insulatinglayer 280 can be only located below one of the source region and the drain region through removing the secondsemiconductor material layer 260 grown on the corresponding one side of the protrusion by photolithography or the like. According to this invention, the object of this invention, that is, to reduce parasitic capacitance, can be achieved, even if the horizontal insulatinglayer 280 is only formed on one side of the protrusion. - Further, since the expected depth of the source and drain regions can be selected in advance in the steps of
FIGS. 2B and 2E , the relative positions of the horizontal insulatinglayer 280 with respect to the source and drain regions can be determined beforehand advantageously. This is very benefit for reducing junction capacitance. For example, the depth of the source and drain regions can be predetermined based on the doping process parameters thereof, and then the horizontal insulating layer can be formed before the formation of the source and drain regions according to the predetermined depth. - The third embodiment of this invention will be described with reference to drawings.
- The steps of the third embodiment are similar to those of the second embodiment up to
FIG. 2I , which are not discussed in detail for conciseness. - On the base of the structure of
FIG. 2I , instead of removing the vertical portion of theoxide insulating layer 250 as shown inFIG. 2J , it is maintained as vertical insulating layer for later use. As shown inFIG. 3A , a first semiconductor material such as Si is grown on the secondsemiconductor material layer 260, such that the first semiconductor material grown is flush with the top of the protrusion of the substrate. - As shown in
FIG. 3B , the last part of the cap-shaped mask, i.e., theoxide insulating layer 210 of the cap-shaped mask, is removed. - Next, as shown in
FIG. 3C , isolatingtrenches 270 are formed on opposite sides of the resultant semiconductor structure. In this invention, the depth of the isolatingtrenches 270 is selected so that isolatingtrenches 270 can intersect with the secondsemiconductor material layer 260. Then, an etchant is introduced through the isolatingtrenches 270 to selectively etch off the secondsemiconductor material layer 260. For example, the secondsemiconductor material layer 260 formed of, for example SiGe, can be removed through wet etching. - In
FIG. 3D , a horizontal insulatinglayer 280 is formed at the position where thesemiconductor material layer 260 originally existed through thermal oxidization. As mentioned above, the thickness of the horizontal insulatinglayer 280 is determined by the grown thickness of the original secondsemiconductor material layer 260. Therefore, those skilled in the art can select the thickness of the horizontal insulatinglayer 280 to achieve expected benefit effects. - Referring to
FIG. 3E , isolatingtrenches 270 are filled as known by those skilled in the art. - As shown in
FIG. 3F , a gate and a gate insulating layer (not shown) are formed on the obtained semiconductor structure. Source and drain regions are formed on opposite sides of the gate through doping. The above steps are similar to those shown inFIGS. 1K-1M , and are not repeated herein. - As shown in
FIGS. 2B-2E , the distance from the vertical portion of theoxide insulating layer 250 to the substrate surface is determined by the depth to be etched on the substrate as shown inFIG. 2B . Therefore, the vertical insulating layer should be lower than the substrate surface. And those skilled in the art can select and determine the height of the vertical insulating layer, and thus, the resistance to punch leakage, based on different device performance. For example, the higher the vertical insulating layer is, the better effect of punch leakage prevention can be obtained. However, the vertical insulating layer should be lower than the substrate surface. In another embodiment, the vertical insulating layer can be lower than the source and drain regions. - According to the third embodiment of this invention, the vertical portion of the
oxide insulating layer 250 is maintained. Therefore, in thesubstrate 200 is formed an insulating layer consisted of the vertical portion of theoxide insulating layer 250 and the horizontal insulatinglayer 280 in the form of “” or “”. Such a structure can obtain some technique effect benefits. For example, the vertical portion of the “” or “” shaped insulating layer can greatly reduce punch leakage, and therefore improve performance of semiconductor devices. Furthermore, the horizontal portion of the “” or “” shaped insulating layer can reduce parasitic capacitance between the source/drain region and the substrate. - The semiconductor device according to the third embodiment, as well as its manufacturing method, can alleviate the influence of short channel effects, and improve performance of semiconductor devices.
- It will be appreciated that words “approximately” or “about” are used herein to mean that values or positions expressed with such words are expected to be very proximate to the specified values and positions. However, it is well known in the art that slight deviations present ubiquitously may prevent the precisely match therebetween. It is well known in the art that a deviation up to about 10% (and for semiconductor doping concentrate, up to 20%) is considered as a reasonable deviation of the idea target.
- Further, although some oxide or nitride layers are shown as single layers in this specification and drawings, however, those skilled in the art will appreciate that a single or multiple oxide or nitride insulating layers can be selected based on specific applications, at this time, the process can be change consequently according to the components of the selected insulating layer(s).
- Although preferable embodiment according to this invention have been described with reference to drawings, obviously, various modifications and changes can be made by those skilled in the art according to the previous description. Hence, all of such selections, modifications and changes that fall within the real scope and subject of this invention are covered by the attached claims.
Claims (14)
1. A semiconductor device, comprising:
a gate on a substrate;
source and drain regions located on opposite sides of the gate;
a horizontal insulating layer located substantially parallel to the surface of the substrate and below at least one of the source and drain regions.
2. The semiconductor device according to claim 1 , further comprising a vertical insulating layer located substantially vertical to the surface of the substrate and below a side surface of the gate.
3. The semiconductor device according to claim 2 , wherein the vertical insulating layer is lower than the source and drain regions.
4. The semiconductor device according to claim 3 , further comprising isolating trenches located on one side of the source and drain regions away from the gate.
5. The semiconductor device according to claim 4 , wherein the horizontal insulating layer intersects with the isolating trenches.
8. A semiconductor device, comprising:
a substrate having a protrusion and two flat portions on opposite sides of the protrusion;
at least one horizontal insulating layer located on at least one of the flat portions;
at least one vertical insulating layer located on at least a portion of at least one sidewall of the protrusion and intersecting with the horizontal insulating layer;
source and drain regions located on opposite sides of the protrusion; and
a gate on the protrusion.
9. The semiconductor device according to claim 8 , wherein a height of the vertical insulating layer is less than a height of the protrusion.
10. The semiconductor device according to claim 8 , further comprising at least one isolating trench intersecting with the horizontal insulating layer and located away from the vertical insulating layer.
11. The semiconductor device according to claim 8 , wherein the source and drain regions are doped semiconductor layers grown on the flat portions.
12. The semiconductor device according to claim 8 , wherein at least one portion of the protrusion servers as a channel of semiconductor device.
13. A semiconductor device, comprising:
a gate on a substrate;
source and drain regions located on opposite sides of the gate;
a channel region between the source region and the drain region; and
at least one insulating structure on at least one side of the channel region, wherein the insulating structure comprises a horizontal portion and a vertical portion intersecting with the horizontal portion.
14. The semiconductor device according to claim 13 , wherein the horizontal portion of the insulating structure is in contact with the substrate and a height of the vertical portion of the insulating structure is less than a height of the source or drain region.
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US13/244,054 US9099323B2 (en) | 2011-06-09 | 2011-09-23 | Semiconductor device and manufacturing method thereof |
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US4648173A (en) * | 1985-05-28 | 1987-03-10 | International Business Machines Corporation | Fabrication of stud-defined integrated circuit structure |
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US20090011570A1 (en) * | 2007-06-26 | 2009-01-08 | Ichiro Mizushima | Method of manufacturing semiconductor device |
WO2011064891A1 (en) * | 2009-11-30 | 2011-06-03 | 富士通セミコンダクター株式会社 | Method of producing semiconductor device, and method of producing dynamic threshold transistor |
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TW476451U (en) * | 1991-08-23 | 2002-02-11 | Semiconductor Energy Lab | Semiconductor device |
KR100226794B1 (en) * | 1996-06-10 | 1999-10-15 | 김영환 | Manufacturing method for a mosfet |
CN100356527C (en) * | 2005-08-31 | 2007-12-19 | 北京大学 | Method for making MOS transistor with source-drain on insulating layer |
US7851859B2 (en) * | 2006-11-01 | 2010-12-14 | Samsung Electronics Co., Ltd. | Single transistor memory device having source and drain insulating regions and method of fabricating the same |
JP5211647B2 (en) * | 2007-11-01 | 2013-06-12 | 富士通セミコンダクター株式会社 | Semiconductor device and manufacturing method thereof |
CN101924139B (en) * | 2010-06-25 | 2012-05-30 | 北京大学 | Strain channel field-effect transistor and preparation method thereof |
JP5768456B2 (en) * | 2011-04-18 | 2015-08-26 | 富士通セミコンダクター株式会社 | Semiconductor device and manufacturing method thereof |
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2011
- 2011-06-09 CN CN201110153290.XA patent/CN102820320B/en active Active
- 2011-09-23 US US13/244,054 patent/US9099323B2/en active Active
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US4648173A (en) * | 1985-05-28 | 1987-03-10 | International Business Machines Corporation | Fabrication of stud-defined integrated circuit structure |
US6936522B2 (en) * | 2003-06-26 | 2005-08-30 | International Business Machines Corporation | Selective silicon-on-insulator isolation structure and method |
US20090011570A1 (en) * | 2007-06-26 | 2009-01-08 | Ichiro Mizushima | Method of manufacturing semiconductor device |
WO2011064891A1 (en) * | 2009-11-30 | 2011-06-03 | 富士通セミコンダクター株式会社 | Method of producing semiconductor device, and method of producing dynamic threshold transistor |
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CN102820320A (en) | 2012-12-12 |
US20120313171A1 (en) | 2012-12-13 |
CN102820320B (en) | 2015-03-04 |
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