US20160260588A1 - SILICON ETCH PROCESS WITH TUNABLE SELECTIVITY TO SiO2 AND OTHER MATERIALS - Google Patents
SILICON ETCH PROCESS WITH TUNABLE SELECTIVITY TO SiO2 AND OTHER MATERIALS Download PDFInfo
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- US20160260588A1 US20160260588A1 US15/158,396 US201615158396A US2016260588A1 US 20160260588 A1 US20160260588 A1 US 20160260588A1 US 201615158396 A US201615158396 A US 201615158396A US 2016260588 A1 US2016260588 A1 US 2016260588A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Definitions
- the present disclosure applies broadly to the field of plasma processing equipment. More specifically, systems and methods for managing selectivity of plasma etches are disclosed.
- Plasma processing often utilizes plasma processing to etch, clean or deposit material on semiconductor wafers.
- Plasma etching often targets a particular material, but may also affect other materials that are present on the same wafer, or other workpiece.
- Selectivity of a plasma etch is often defined as a ratio of an etch rate of a target material to the etch rate of the same etch to another material. It is often advantageous for selectivity to be very high, such that the target material can be etched with little effect on other materials.
- a tunable plasma etch process includes generating a plasma in a controlled flow of a source gas including NH 3 and NF 3 to form a stream of plasma products, controlling a flow of un-activated NH 3 that is added to the stream of plasma products to form an etch gas stream; and controlling pressure of the etch gas stream by adjusting at least one of the controlled flow of the source gas and the flow of un-activated NH 3 until the pressure is within a tolerance of a desired pressure.
- An etch rate of at least one of polysilicon and silicon dioxide by the etch gas stream is adjustable by varying a ratio of the controlled flow of the source gas to the flow of un-activated NH 3 .
- a plasma etch processing system that etches silicon and silicon dioxide with tunable selectivity includes a first NH 3 flow controller, an NF 3 flow controller, and a remote plasma source configured to apply RF energy to a plasma source gas stream controlled by the first NH 3 flow controller and the NF 3 flow controller, to generate a plasma product stream from the plasma source gas stream.
- the processing system further includes a second NH 3 flow controller configured to control an un-activated NH 3 gas stream, apparatus for adding the un-activated NH 3 gas stream to the plasma product stream to form an etch gas stream, and a process chamber configured to expose a workpiece to the etch gas stream.
- Etch rates of at least one of polysilicon and silicon dioxide by the etch gas stream on the workpiece are adjustable at least by varying a ratio of the plasma source gas stream to the un-activated NH 3 gas stream.
- a plasma etch processing system includes a process chamber configured to expose a workpiece to an etch gas stream, and a plasma source that generates a plasma product stream from a source gas stream that includes NH 3 and NF 3 .
- the system also includes means for controlling a first NH 3 flow and an NF 3 flow of the source gas stream, and means for controlling a second NH 3 flow of an un-activated NH 3 gas stream.
- the system also includes a diffuser plate disposed between the plasma source and the process chamber that allows the plasma product stream to flow through the diffuser plate toward the process chamber, and adds the un-activated NH 3 gas stream only on a process chamber side of the diffuser plate, to form an etch gas stream.
- the system also includes a controller for controlling the plasma source, the means for controlling the first NH 3 flow and the NF 3 flow of the source gas stream, and the means for controlling the second NH 3 flow of the un-activated NH 3 gas stream, such that the controller adjusts etch rates of at least one of polysilicon and silicon dioxide by the etch gas stream on the workpiece by varying a ratio of the un-activated NH 3 gas stream to the source gas stream.
- FIG. 1 schematically illustrates major elements of a plasma processing system, according to an embodiment.
- FIG. 2 schematically illustrates major elements of a plasma processing system, in a cross-sectional view, according to an embodiment.
- FIG. 3 is a flowchart of a tunable plasma etch process, according to an embodiment.
- FIG. 4 shows a graph that illustrates test etch rate results of a Si etch having tunable selectivity to SiO 2 , according to an embodiment.
- FIG. 5 illustrates an SiO 2 region on a wafer section, forming trenches that are lined with TiN, according to an embodiment.
- FIG. 6 illustrates the SiO 2 region of FIG. 5 as including a significant fraction of Si, according to an embodiment.
- FIG. 7 illustrates the result of etching the wafer section of FIG. 5 with a Si etch having tunable selectivity to SiO 2 to form a modified wafer section, according to an embodiment.
- FIGS. 8A, 8B and 8C schematically illustrate a process sequence in which trace amounts of SiO 2 are not successfully removed by prior art processing.
- FIGS. 9A, 9B, 9C and 9D schematically show how the structure shown in FIGS. 8A, 8B and 8C can be more successfully processed with a Si etch with tunable selectivity to oxide, according to embodiments herein.
- FIG. 1 schematically illustrates major elements of a plasma processing system 100 , according to an embodiment.
- System 100 is depicted as a single wafer, semiconductor wafer plasma processing system, but it will be apparent to one skilled in the art that the techniques and principles herein are applicable to plasma generation systems of any type (e.g., systems that do not necessarily process wafers or semiconductors).
- FIG. 1 is a simplified diagram illustrating only selected, major elements of system 100 ; an actual processing system will accordingly look different and likely contain additional elements as compared with system 100 .
- Processing system 100 includes a housing 110 for at least a wafer interface 115 , a user interface 120 , a plasma processing unit 130 , a controller 140 , one or more flow controller(s) 156 and one or more power supplies 150 .
- Processing system 100 is supported by various utilities that may include gas(es) 155 , electrical power 170 , vacuum 160 and optionally others; within system 100 , controller 140 may control use of any or all of such utilities. Internal plumbing and electrical connections within processing system 100 are not shown, for clarity of illustration.
- Processing system 100 is illustrated as a so-called indirect, or remote, plasma processing system that generates a plasma in a first location and directs the plasma and/or plasma products (e.g., ions, molecular fragments, free radicals, energized species and the like) to a second location where processing occurs.
- plasma processing unit 130 includes a remote plasma source 132 that supplies plasma and/or plasma products for a process chamber 134 .
- Process chamber 134 includes one or more wafer pedestals 135 , to which wafer interface 115 delivers and retrieves workpieces 50 (e.g., a semiconductor wafer, but could be a different type of workpiece) for processing.
- workpieces 50 e.g., a semiconductor wafer, but could be a different type of workpiece
- Wafer pedestal 135 is heated and/or cooled by a wafer heating/cooling apparatus 117 which could include, in embodiments, resistive heaters, other types of heaters, or cooling fluids.
- gas(es) 155 are introduced into plasma source 132 and a radio frequency generator (RF Gen) 165 supplies power to ignite a plasma within plasma source 132 .
- Plasma and/or plasma products pass from plasma source 132 through at least a diffuser plate 137 to process chamber 134 , where workpiece 50 is processed.
- RF Gen radio frequency generator
- An actual plasma system may provide many other optional features or subsystems through which plasma and/or plasma products flow and/or mix between plasma source 132 and process chamber 134 , and may include sensors 118 that measure parameters such as pressures, temperatures, optical emissions and the like at wafer pedestal 135 , within process chamber 134 as shown, and possibly at other locations within processing system 100 .
- flow controllers may be, or include, mass flow controllers, valves, needle valves, and pressure regulators.
- Various control schemes affecting conditions in process chamber 105 are possible.
- a pressure may be maintained by monitoring the pressure in process chamber 134 and adjusting all gas flows upwards or downwards until the measured pressure is within some tolerance of a desired pressure.
- the pressure may be controllable within a range of about 0.5 Torr to 10 Torr; in certain embodiments, controlling pressure around 2 Torr or 6 Torr may be advantageous.
- Temperatures can be controlled by adding heaters and temperature sensors to process chamber 134 and/or wafer pedestal 135 .
- Optical sensors may detect emission peaks of plasmas as-generated and/or as they interact with workpieces.
- system 100 Internal connections and cooperation of the elements illustrated within system 100 are also not shown for clarity of illustration.
- other representative utilities such as vacuum 160 and/or general purpose electrical power 170 may connect with system 100 .
- the utilities illustrated as connected with system 100 are intended as illustrative rather than exhaustive; other types of utilities such as heating or cooling fluids, pressurized air, network capabilities, waste disposal systems and the like may also be connected with system 100 , but are not shown for clarity of illustration.
- plasma is ignited within remote plasma source 132
- the principles discussed below are equally applicable to so-called “direct” plasma systems that create a plasma in a the actual location of workpiece processing.
- FIG. 1 Although an indirect plasma processing system is illustrated in FIG. 1 and elsewhere in this disclosure, it should be clear to one skilled in the art that the techniques, apparatus and methods disclosed herein may also be applicable to direct plasma processing systems—e.g., where a plasma is ignited at the location of the workpiece(s).
- the components of processing system 100 may be reorganized, redistributed and/or duplicated, for example: (1) to provide a single processing system with multiple process chambers; (2) to provide multiple remote plasma sources for a single process chamber; (3) to provide multiple workpiece fixtures (e.g., wafer pedestals 135 ) within a single process chamber; (4) to utilize a single remote plasma source to supply plasma products to multiple process chambers; and/or (5) to provide plasma and gas sources in serial/parallel combinations such that various source gases may be activated (e.g., exist at least temporarily as part of a plasma) zero, one, two or more times, and mixed with other source gases before or after they enter a process chamber, and the like. Gases that have not been part of a plasma are sometimes referred to as “un-activated” gases herein.
- FIG. 2 schematically illustrates major elements of a plasma processing system 200 , in a cross-sectional view, according to an embodiment.
- Plasma processing system 200 is an example of plasma processing unit 130 , FIG. 1 .
- Plasma processing system 200 includes a process chamber 205 and a plasma source 210 .
- plasma source 210 introduces gases 155 ( 1 ) directly, and/or gases 155 ( 2 ) that become plasma products in a further remote plasma source 202 , as plasma input gas 212 , through an RF electrode 215 .
- RF electrode 215 includes (e.g., is electrically tied to) a first gas diffuser 220 and a face plate 225 that serve to redirect flow of the source gases so that gas flow is uniform across plasma source 210 , as indicated by small arrows 226 .
- an insulator 230 electrically insulates RF electrode 215 from a diffuser 235 that is held at electrical ground (e.g., diffuser 235 serves as a second electrode counterfacing face plate 225 of RF electrode 215 ).
- RF electrode 215 , diffuser 235 and insulator 230 define a plasma generation cavity where a capacitively coupled plasma 245 is created when the source gases are present and RF energy is provided through RF electrode 215 .
- RF electrode 215 and diffuser 235 may be formed of any conductor, and in embodiments are formed of aluminum (or an aluminum alloy, such as the known “6061” alloy type).
- Surfaces of face plate 225 and diffuser 235 that face the plasma cavity or are otherwise exposed to reactive gases may be coated with yttria (Y 2 O 3 ) or alumina (Al 2 O 3 ) for resistance to the reactive gases and plasma products generated in the plasma cavity.
- Insulator 230 may be any insulator, and in embodiments is formed of ceramic.
- Plasma products generated in plasma 245 pass through diffuser 235 that again helps to promote the uniform distribution of plasma products, and may assist in electron temperature control.
- the plasma products pass through a further diffuser 260 that promotes uniformity as indicated by small arrows 227 , and enter process chamber 205 where they interact with workpiece 50 , such as a semiconductor wafer, atop wafer pedestal 135 .
- Diffuser 260 includes further gas channels 250 that may be used to add one or more additional, un-activated gases 155 ( 3 ) to the plasma products as they enter process chamber 205 , as indicated by very small arrows 229 .
- Diffuser 260 provides un-activated gases 155 ( 3 ) only on a downstream, or process chamber side, as shown.
- Embodiments herein may be rearranged and may form a variety of shapes.
- RF electrode 215 and diffuser 235 are substantially radially symmetric in the embodiment illustrated in FIG. 2
- insulator 230 is a ring disposed against peripheral areas of face plate 225 and diffuser 235 , for an application that processes a circular semiconductor wafer as workpiece 50 .
- such features may be of any shape that is consistent with use as a plasma source.
- the exact number and placement of features for introducing and distributing gases and/or plasma products, such as diffusers, face plates and the like may also vary. For example, it would be possible to substitute an arrangement for generating an inductively coupled plasma, for the capacitively coupled plasma arrangement illustrated.
- other components of plasma processing system 200 may be configured to add or mix gases 155 with other gases and/or plasma products as they make their way through the system to process chamber 205 .
- polysilicon In semiconductor processing, plasma etch processes for etching polycrystalline silicon (hereinafter sometimes referred to as “polysilicon” or “poly”) are often advantageously selective to silicon over silicon dioxide (hereinafter sometimes referred to as “oxide”).
- a plasma etch is highly selective to poly over oxide is as follows. Polysilicon is often utilized as a “gate” electrode in so-called “MOS” transistors (MOS standing for Metal-Oxide-Semiconductor, although poly, instead of metal, is usually used for the gate electrode material).
- MOS Metal-Oxide-Semiconductor
- a “source” and “drain” are formed in a silicon wafer, with the gate defining separation of, and influencing electrical conduction between, the source and drain.
- a poly layer may be deposited over a dielectric layer, typically SiO 2 .
- the SiO 2 layer is typically very thin, to maximize field strength in this layer in the final transistor when a voltage is applied.
- the poly layer is typically thicker than the SiO 2 layer, and poly depositions are often conformal such that minor crevices on the wafer surface fill with poly. When the poly layer is patterned, the poly in these crevices must be removed to prevent adjacent transistor gates from shorting to one another.
- the SiO 2 layer may need to protect other parts of the wafer during the fabrication process, especially as portions of the poly layer are etched away to form the transistor gates.
- a poly etch with low selectivity to oxide might etch through the SiO 2 layer and damage the underlying silicon wafer areas that are intended to form the source and drain of the transistor.
- These and/or other processes generate silicon fins by, for example, generating vertical steps on a wafer, depositing poly conformally, and anisotropically etching back the poly in a vertical direction, clearing the poly from horizontal surfaces but leaving the fins behind as residual features against the vertical steps.
- Many other arrangements are in use or under study to reduce wafer area needed for fabrication of complex devices, to improve device performance, density and/or yield of working circuits per wafer.
- a plasma etch having a selectivity that could be adjustable, or “tunable” from highly selective to poly over oxide, to less selective, or even to being selective to oxide over poly, is advantageous.
- Plasma etch embodiments herein have tunable selectivity, for example selectivity to Si over oxide. These embodiments typically utilize NF 3 and NH 3 gases as plasma source gases, and/or as gases that are mixed with plasma products before reaching the workpiece. Certain other gases such as He or Ar may additionally be used as carrier gases but generally do not take part in reactions; also, small percentages (less than about 10% of total gas flow) of oxygen may be added to help with plasma ignition and to boost reaction rates in the plasma. Generally speaking, in the plasma environment NF 3 and NH 3 dissociate, and/or some of the generated products thereof can combine, to form plasma products such as free H and F radicals, HF, N 2 , NH 4 F and/or NH 4 F.HF.
- plasma products such as free H and F radicals, HF, N 2 , NH 4 F and/or NH 4 F.HF.
- plasma activation favors formation of free H and F radicals, HF and N 2
- addition of un-activated NH 3 favors formation of NH 4 F and/or NH 4 F.HF.
- Si e.g., polysilicon
- F and Si can react to form SiF 4
- H and Si can react to form SiH 4 .
- SiO 2 is present, NH 4 F or NH 4 F.HF can react with SiO 2 to form (NH 4 ) 2 SiF 6 and H 2 O; importantly, (NH 4 ) 2 SiF 6 generally forms and remains as a solid, but heat can cause it to dissociate to form SiF 4 , NH 3 and HF.
- NH 4 F and NH 4 F.HF can react with SiO 2 to form SiH 4 F, H 2 O and NH 3 .
- Certain of these source gases may participate in reactions even when provided in un-activated form, for example, when provided as un-activated gas flow 155 ( 3 ), in addition to plasma products from plasma 245 , FIG. 2 .
- Etches described herein are also tunable with respect to selectivity of poly over silicon nitride.
- the classic formulation of silicon nitride is Si 3 N 4 , but stoichiometry of silicon nitride can vary depending on the conditions in which it is generated. In this disclosure, Si 3 N 4 and other stoichiometric variations of silicon nitride are referred to herein simply as SiN.
- SiN When SiN is present, NF 3 and SiN can react to form NF and SiF 4 , while NF 3 , NH 3 and SiN can react to form SiH 4 .HF and NH 4 F.HF.
- certain ones of the input gases have different effects on the etching, as does the proportion of input gases that are activated by forming plasma therefrom, to un-activated gases (e.g., the proportion of input gas 212 to gas 155 ( 3 ), see FIG. 2 ), so as to provide etches with tunable selectivity.
- Temperature and pressure have also been discovered to have effects. These effects can be utilized to tune an etch that fundamentally uses the same types of input gases to have different selectivities, as discussed below.
- the etches disclosed can be performed in such a way as to maintain very high selectivity to other materials that may be present on a wafer and should be left undisturbed, such as TiN or W. Still furthermore, the etches disclosed can, in embodiments, have differing etch rates such that an etch recipe can be tuned for high etch rate during one part of an etch sequence, and a different etch rate during another part of the etch sequence.
- a first variation of a plasma etch process has an initial ratio of NH 3 to NF 3 as a plasma source gas (e.g., input gas 212 ) that forms plasma products in plasma 245 , and adds further NH 3 as an un-activated gas (e.g., gas 155 ( 3 )) resulting in a ratio of input gas 212 to gas 155 ( 3 ) of about 10:1.
- the first recipe is performed at a pressure of 2 Torr at the wafer (e.g., workpiece 50 in process chamber 205 ).
- the pressure of 2 Torr may be maintained, for example, by monitoring the pressure in process chamber 205 and adjusting all gas flows upwards or downwards until the measured pressure is within some tolerance of 2 Torr.
- the first recipe has a poly over oxide selectivity of about 20:1.
- the dominant plasma reactions include NF 3 and NH 3 providing substantial amounts of free F and H radicals, which react aggressively with Si but less aggressively with SiO 2 .
- a second variation of the etch recipe flows the same ratio of NH 3 to NF 3 as input gas 212 , but at a lower volume, and/or adds more NH 3 as un-activated gas 155 ( 3 ), as compared to the first recipe.
- the gas flows of the second etch recipe result in a ratio of input gas 212 to gas 155 ( 3 ) of about 4:1 or 5:1.
- the second etch recipe is also performed at a pressure of 2 Torr.
- the resulting poly over oxide etch rate selectivity is about 2:1.
- the reduced etch rate selectivity is due to the adjusted gas flows favoring production of NH 4 F and NH 4 F.HF, which substantially etch SiO 2 , over production of F and H radicals, which preferentially etch Si.
- a third variation of the etch recipe flows the same ratio of NH 3 to NF 3 as input gas 212 , and NH 3 as un-activated gas 155 ( 3 ), as compared to the second recipe, but is performed at a pressure of 6 Torr.
- the increased pressure reduces the mean free path of available F and H radicals, which again favors the etching of SiO 2 over the etching of Si.
- the third etch recipe actually etches oxide faster than poly, with a resulting etch rate selectivity of oxide over poly of about 3:1.
- the etch recipes noted above may proceed faster at relatively high wafer temperatures, such as greater than 100 C.
- the etch recipes noted above can also be highly selective to materials such as TiN and W that are commonly utilized in semiconductor processing at the so-called “frontend” of the process (e.g., layers where transistors and gates are formed and interconnected). That is, the etch rates of TiN and W can be negligibly low. Achieving high selectivity to TiN requires that temperature of a wafer being etched be maintained at less than about 125 C, at which temperature fluorine radicals begin to attack TiN.
- NH 3 and NF 3 plasma products e.g., free F and H radicals
- un-activated NH 3 that is added, and the pressure at the workpiece (e.g., in process chamber 205 )
- the selectivity of poly to oxide etch rates can be continuously adjusted at least between the extremes noted above; that is, at least from 20:1 poly over oxide to 3:1 oxide over poly.
- FIG. 3 is a flowchart of a tunable plasma etch process 300 .
- Plasma etch process 300 may be implemented, for example, by plasma processing system 100 , FIG. 1 , and/or other plasma processing systems that utilize plasma processing system 200 , FIG. 2 .
- a plasma is generated in a controlled flow of a source gas that includes NH 3 and NF 3 .
- An example of step 302 is flowing a mixture of NH 3 and NF 3 as input gas 212 , FIG. 2 , and generating plasma 245 therefrom.
- Plasma 245 will include plasma products such as H and F free radicals, HF and N2, as shown in reaction (1) above.
- step 306 a controlled flow of un-activated NH 3 is added to the stream of plasma products, to form an etch gas stream.
- An example of step 306 is flowing NH 3 as un-activated gas 155 ( 3 ), FIG. 2 .
- Step 310 controls pressure of the etch gas stream by adjusting the source gas and un-activated NH 3 flows until the etch gas pressure is within a tolerance of a desired pressure.
- An example of step 310 is controlling pressure of the etch gas stream in process chamber 205 , FIG. 2 , and adjusting flows of input gas 212 and un-activated gas 155 ( 3 ) until the pressure in process chamber 205 is within a tolerance of the desired pressure.
- Step 312 adjusts a ratio of source gas to un-activated NH 3 to vary etch rates of polysilicon and/or silicon dioxide to achieve the desired selectivity. Step 312 is done in concert with step 310 ; that is, an adjustment to one of the source gas and un-activated NH 3 will typically be performed with an adjustment to the other, so that the etch gas pressure and flow ratio are maintained simultaneously.
- FIG. 4 shows a graph 330 that illustrates test etch rate results of a Si etch having tunable selectivity to SiO 2 .
- NF 3 and NH 3 may be supplied either as source gases 155 ( 2 ) in the apparatus illustrated in FIG. 2 , and activated in remote plasma source 202 , or may be supplied as source gases 155 ( 1 ) and activated in plasma 245 .
- TiN etch rate was measured but remained at zero across all tested process conditions. When the un-activated NH 3 flow rate was zero, Si had a low etch rate while SiO 2 (labeled as “Oxide” in graph 330 ) had an etch rate of almost zero.
- FIGS. 5, 6 and 7 illustrate a process application that advantageously utilizes a Si etch with tunable selectivity to oxide, as described herein.
- FIG. 5 illustrates an SiO 2 region 350 on a wafer section 340 , forming trenches 380 , 385 that are lined with TiN 360 .
- Atop TiN layer 360 is a poly layer 370 .
- a region labeled as A in FIG. 5 is illustrated in greater detail in FIG. 6 .
- FIG. 6 illustrates that poly layer 370 sits atop a region of SiO 2 375 that includes a significant fraction of Si. It is important in this process that SiO 2 375 not be etched significantly, so when SiO 2 375 is exposed, an etch that is highly selective to poly over oxide should be employed, to minimize attack on SiO 2 375 .
- the following discussion begins with generating a plasma in a controlled flow of source gas that includes NH 3 and NF 3 , to form a stream of plasma products, and adding a controlled flow of un-activated NH 3 to form an etch gas stream that interacts with poly layer 370 and SiO 2 375 . Referring to FIG.
- a flow rate of 150 to 250, in the arbitrary units illustrated in FIG. 4 can be used.
- This provides a high poly etch rate, and this etch rate is maintained for a time calculated as corresponding to etching partially, but not completely, through the region of poly 370 labeled as 390 in FIG. 6 .
- the un-activated NH 3 flow rate is brought down to zero, or near zero, while etching the region of poly 370 labeled as 395 . This causes the poly etch rate to drop, but the corresponding oxide etch rate also drops to near zero, as illustrated in FIG.
- FIG. 7 illustrates the result of etching wafer section 340 to form wafer section 340 ′.
- FIGS. 8A, 8B and 8C schematically illustrate a process sequence in which trace amounts of SiO 2 are not successfully removed by prior art processing.
- FIG. 8A shows a wafer section 400 that includes a portion of a silicon substrate 410 and overlying structures.
- a spacer structure 450 is part of a fin-FET process.
- Certain recesses within spacer structure 450 contain inter-layer dielectric oxides 430 that are generally to be retained in the etch sequence to be described.
- Other recesses contain polysilicon 420 that is to be removed; however the polysilicon is partially oxidized along grain boundaries thereof, shown as oxide traces 425 , near the surface. Depth of oxide traces 425 is known with reasonable accuracy.
- Below the poly, adjacent to silicon substrate 410 in the same recesses of spacer structure 450 are thin layers of high dielectric constant oxide (“high-K oxide” hereinafter) 440 that are not to be etched at all.
- high-K oxide high dielectric constant oxide
- FIG. 8B schematically illustrates partial etching of wafer section 400 with a highly selective poly etch to form a partially processed wafer section 401 .
- the poly etch used is highly selective so as not to etch high-K oxide 440 , but because of this selectivity, oxide traces 425 are also not etched.
- Wafer section 401 shows how wafer section 401 will look as poly 420 is about one third etched away.
- FIG. 8C schematically illustrates further etching of wafer section 400 with a highly selective poly etch to form a partially processed wafer section 402 .
- Some oxide traces 425 remain in their original locations, while others, having lost all mechanical connection with spacer structure 450 , migrate about the recesses to other locations, as shown. At least some of oxide traces 425 cause electrical defects in the finished semiconductor product, as they interfere with the structures that should be present at their locations, and/or cause photolithographic defects in further processing.
- FIGS. 9A, 9B, 9C and 9D schematically show how the structure shown as wafer section 400 can be more successfully processed with a Si etch with tunable selectivity to oxide, according to embodiments herein.
- the following discussion begins with generating a plasma in a controlled flow of source gas that includes NH 3 and NF 3 , to form a stream of plasma products, and adding a controlled flow of un-activated NH 3 to form an etch gas stream that interacts with the features of wafer section 400 .
- FIG. 9A shows wafer section 400 (identical to that shown in FIG. 8A ).
- FIG. 9B illustrates partial etching of wafer section 400 with the etch gas stream, to form a partially processed wafer section 403 .
- the etch gas stream used to form wafer section 403 includes enough NH 3 to provide a nonzero oxide etch rate, that is, to make the etch only partially selective to poly over oxide.
- oxide traces 425 are etched along with poly 420 in this part of the etch process. Once the etch penetrates past oxide traces 425 (for example, after a time at which a measured or calculated etch rate ensures etching to or beyond the known maximum depth of oxide traces 425 ) NH 3 flow can be reduced to zero or near zero, to increase selectivity of poly over oxide.
- FIG. 9C illustrates partial etching of wafer section 400 with the etch, to form a partially processed wafer section 403 .
- the etch proceeds in this manner until poly 420 is completely removed, as shown in wafer section 405 , FIG. 9D .
- the high selectivity of the Si etch having tunable selectivity to oxide ensures that high-K oxide 440 is not damaged as poly 420 is removed.
Abstract
A tunable plasma etch process includes generating a plasma in a controlled flow of a source gas including NH3 and NF3 to form a stream of plasma products, controlling a flow of un-activated NH3 that is added to the stream of plasma products to form an etch gas stream; and controlling pressure of the etch gas stream by adjusting at least one of the controlled flow of the source gas and the flow of un-activated NH3 until the pressure is within a tolerance of a desired pressure. An etch rate of at least one of polysilicon and silicon dioxide by the etch gas stream is adjustable by varying a ratio of the controlled flow of the source gas to the flow of un-activated NH3.
Description
- This application is a divisional of U.S. patent application Ser. No. 14/566,291, filed Dec. 10, 2014 and entitled “Silicon Etch Process With Tunable Selectivity to SiO2 and Other Materials,” which claims the benefit of priority to U.S. Provisional Patent Application No. 62/054,860, filed 24 Sep. 2014 and entitled “Silicon Etch Process With Tunable Selectivity to SiO2 and Other Materials.” Both of the above-identified applications are incorporated herein by reference in their entireties for all purposes.
- The present disclosure applies broadly to the field of plasma processing equipment. More specifically, systems and methods for managing selectivity of plasma etches are disclosed.
- Semiconductor processing often utilizes plasma processing to etch, clean or deposit material on semiconductor wafers. Plasma etching often targets a particular material, but may also affect other materials that are present on the same wafer, or other workpiece. Selectivity of a plasma etch is often defined as a ratio of an etch rate of a target material to the etch rate of the same etch to another material. It is often advantageous for selectivity to be very high, such that the target material can be etched with little effect on other materials.
- In an embodiment, a tunable plasma etch process includes generating a plasma in a controlled flow of a source gas including NH3 and NF3 to form a stream of plasma products, controlling a flow of un-activated NH3 that is added to the stream of plasma products to form an etch gas stream; and controlling pressure of the etch gas stream by adjusting at least one of the controlled flow of the source gas and the flow of un-activated NH3 until the pressure is within a tolerance of a desired pressure. An etch rate of at least one of polysilicon and silicon dioxide by the etch gas stream is adjustable by varying a ratio of the controlled flow of the source gas to the flow of un-activated NH3.
- In an embodiment, a plasma etch processing system that etches silicon and silicon dioxide with tunable selectivity includes a first NH3 flow controller, an NF3 flow controller, and a remote plasma source configured to apply RF energy to a plasma source gas stream controlled by the first NH3 flow controller and the NF3 flow controller, to generate a plasma product stream from the plasma source gas stream. The processing system further includes a second NH3 flow controller configured to control an un-activated NH3 gas stream, apparatus for adding the un-activated NH3 gas stream to the plasma product stream to form an etch gas stream, and a process chamber configured to expose a workpiece to the etch gas stream. Etch rates of at least one of polysilicon and silicon dioxide by the etch gas stream on the workpiece are adjustable at least by varying a ratio of the plasma source gas stream to the un-activated NH3 gas stream.
- In an embodiment, a plasma etch processing system includes a process chamber configured to expose a workpiece to an etch gas stream, and a plasma source that generates a plasma product stream from a source gas stream that includes NH3 and NF3. The system also includes means for controlling a first NH3 flow and an NF3 flow of the source gas stream, and means for controlling a second NH3 flow of an un-activated NH3 gas stream. The system also includes a diffuser plate disposed between the plasma source and the process chamber that allows the plasma product stream to flow through the diffuser plate toward the process chamber, and adds the un-activated NH3 gas stream only on a process chamber side of the diffuser plate, to form an etch gas stream. The system also includes a controller for controlling the plasma source, the means for controlling the first NH3 flow and the NF3 flow of the source gas stream, and the means for controlling the second NH3 flow of the un-activated NH3 gas stream, such that the controller adjusts etch rates of at least one of polysilicon and silicon dioxide by the etch gas stream on the workpiece by varying a ratio of the un-activated NH3 gas stream to the source gas stream.
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FIG. 1 schematically illustrates major elements of a plasma processing system, according to an embodiment. -
FIG. 2 schematically illustrates major elements of a plasma processing system, in a cross-sectional view, according to an embodiment. -
FIG. 3 is a flowchart of a tunable plasma etch process, according to an embodiment. -
FIG. 4 shows a graph that illustrates test etch rate results of a Si etch having tunable selectivity to SiO2, according to an embodiment. -
FIG. 5 illustrates an SiO2 region on a wafer section, forming trenches that are lined with TiN, according to an embodiment. -
FIG. 6 illustrates the SiO2 region ofFIG. 5 as including a significant fraction of Si, according to an embodiment. -
FIG. 7 illustrates the result of etching the wafer section ofFIG. 5 with a Si etch having tunable selectivity to SiO2 to form a modified wafer section, according to an embodiment. -
FIGS. 8A, 8B and 8C schematically illustrate a process sequence in which trace amounts of SiO2 are not successfully removed by prior art processing. -
FIGS. 9A, 9B, 9C and 9D schematically show how the structure shown inFIGS. 8A, 8B and 8C can be more successfully processed with a Si etch with tunable selectivity to oxide, according to embodiments herein. -
FIG. 1 schematically illustrates major elements of aplasma processing system 100, according to an embodiment.System 100 is depicted as a single wafer, semiconductor wafer plasma processing system, but it will be apparent to one skilled in the art that the techniques and principles herein are applicable to plasma generation systems of any type (e.g., systems that do not necessarily process wafers or semiconductors). It should also be understood thatFIG. 1 is a simplified diagram illustrating only selected, major elements ofsystem 100; an actual processing system will accordingly look different and likely contain additional elements as compared withsystem 100. -
Processing system 100 includes ahousing 110 for at least awafer interface 115, auser interface 120, aplasma processing unit 130, acontroller 140, one or more flow controller(s) 156 and one ormore power supplies 150.Processing system 100 is supported by various utilities that may include gas(es) 155,electrical power 170,vacuum 160 and optionally others; withinsystem 100,controller 140 may control use of any or all of such utilities. Internal plumbing and electrical connections withinprocessing system 100 are not shown, for clarity of illustration. -
Processing system 100 is illustrated as a so-called indirect, or remote, plasma processing system that generates a plasma in a first location and directs the plasma and/or plasma products (e.g., ions, molecular fragments, free radicals, energized species and the like) to a second location where processing occurs. Thus, inFIG. 1 ,plasma processing unit 130 includes aremote plasma source 132 that supplies plasma and/or plasma products for aprocess chamber 134.Process chamber 134 includes one ormore wafer pedestals 135, to whichwafer interface 115 delivers and retrieves workpieces 50 (e.g., a semiconductor wafer, but could be a different type of workpiece) for processing.Wafer pedestal 135 is heated and/or cooled by a wafer heating/cooling apparatus 117 which could include, in embodiments, resistive heaters, other types of heaters, or cooling fluids. In operation, gas(es) 155 are introduced intoplasma source 132 and a radio frequency generator (RF Gen) 165 supplies power to ignite a plasma withinplasma source 132. Plasma and/or plasma products pass fromplasma source 132 through at least adiffuser plate 137 to processchamber 134, whereworkpiece 50 is processed. An actual plasma system may provide many other optional features or subsystems through which plasma and/or plasma products flow and/or mix betweenplasma source 132 andprocess chamber 134, and may includesensors 118 that measure parameters such as pressures, temperatures, optical emissions and the like atwafer pedestal 135, withinprocess chamber 134 as shown, and possibly at other locations withinprocessing system 100. - The elements illustrated as part of
system 100 are listed by way of example and are not exhaustive. Many other possible elements, such as: pressure and/or flow controllers; gas or plasma manifolds or distribution apparatus; ion suppression plates; electrodes, magnetic cores and/or other electromagnetic apparatus; mechanical, pressure, temperature, chemical, optical and/or electronic sensors; wafer or other workpiece handling mechanisms; viewing and/or other access ports; and the like may also be included, but are not shown for clarity of illustration. In particular, flow controllers may be, or include, mass flow controllers, valves, needle valves, and pressure regulators. Various control schemes affecting conditions in process chamber 105 are possible. For example, a pressure may be maintained by monitoring the pressure inprocess chamber 134 and adjusting all gas flows upwards or downwards until the measured pressure is within some tolerance of a desired pressure. In embodiments herein, the pressure may be controllable within a range of about 0.5 Torr to 10 Torr; in certain embodiments, controlling pressure around 2 Torr or 6 Torr may be advantageous. Temperatures can be controlled by adding heaters and temperature sensors to processchamber 134 and/orwafer pedestal 135. Optical sensors may detect emission peaks of plasmas as-generated and/or as they interact with workpieces. - Internal connections and cooperation of the elements illustrated within
system 100 are also not shown for clarity of illustration. In addition toRF generator 165 andgases 155, other representative utilities such asvacuum 160 and/or general purposeelectrical power 170 may connect withsystem 100. Like the elements illustrated insystem 100, the utilities illustrated as connected withsystem 100 are intended as illustrative rather than exhaustive; other types of utilities such as heating or cooling fluids, pressurized air, network capabilities, waste disposal systems and the like may also be connected withsystem 100, but are not shown for clarity of illustration. Similarly, while the above description mentions that plasma is ignited withinremote plasma source 132, the principles discussed below are equally applicable to so-called “direct” plasma systems that create a plasma in a the actual location of workpiece processing. - Although an indirect plasma processing system is illustrated in
FIG. 1 and elsewhere in this disclosure, it should be clear to one skilled in the art that the techniques, apparatus and methods disclosed herein may also be applicable to direct plasma processing systems—e.g., where a plasma is ignited at the location of the workpiece(s). Similarly, in embodiments, the components ofprocessing system 100 may be reorganized, redistributed and/or duplicated, for example: (1) to provide a single processing system with multiple process chambers; (2) to provide multiple remote plasma sources for a single process chamber; (3) to provide multiple workpiece fixtures (e.g., wafer pedestals 135) within a single process chamber; (4) to utilize a single remote plasma source to supply plasma products to multiple process chambers; and/or (5) to provide plasma and gas sources in serial/parallel combinations such that various source gases may be activated (e.g., exist at least temporarily as part of a plasma) zero, one, two or more times, and mixed with other source gases before or after they enter a process chamber, and the like. Gases that have not been part of a plasma are sometimes referred to as “un-activated” gases herein. -
FIG. 2 schematically illustrates major elements of aplasma processing system 200, in a cross-sectional view, according to an embodiment.Plasma processing system 200 is an example ofplasma processing unit 130,FIG. 1 .Plasma processing system 200 includes aprocess chamber 205 and aplasma source 210. As illustrated inFIG. 2 ,plasma source 210 introduces gases 155(1) directly, and/or gases 155(2) that become plasma products in a furtherremote plasma source 202, asplasma input gas 212, through anRF electrode 215.RF electrode 215 includes (e.g., is electrically tied to) afirst gas diffuser 220 and aface plate 225 that serve to redirect flow of the source gases so that gas flow is uniform acrossplasma source 210, as indicated by small arrows 226. After flowing throughface plate 225, aninsulator 230 electrically insulatesRF electrode 215 from adiffuser 235 that is held at electrical ground (e.g.,diffuser 235 serves as a second electrodecounterfacing face plate 225 of RF electrode 215). Surfaces ofRF electrode 215,diffuser 235 andinsulator 230 define a plasma generation cavity where a capacitively coupledplasma 245 is created when the source gases are present and RF energy is provided throughRF electrode 215.RF electrode 215 anddiffuser 235 may be formed of any conductor, and in embodiments are formed of aluminum (or an aluminum alloy, such as the known “6061” alloy type). Surfaces offace plate 225 anddiffuser 235 that face the plasma cavity or are otherwise exposed to reactive gases may be coated with yttria (Y2O3) or alumina (Al2O3) for resistance to the reactive gases and plasma products generated in the plasma cavity.Insulator 230 may be any insulator, and in embodiments is formed of ceramic. - Plasma products generated in
plasma 245 pass throughdiffuser 235 that again helps to promote the uniform distribution of plasma products, and may assist in electron temperature control. Upon passing throughdiffuser 235, the plasma products pass through afurther diffuser 260 that promotes uniformity as indicated bysmall arrows 227, and enterprocess chamber 205 where they interact withworkpiece 50, such as a semiconductor wafer, atopwafer pedestal 135.Diffuser 260 includesfurther gas channels 250 that may be used to add one or more additional, un-activated gases 155(3) to the plasma products as they enterprocess chamber 205, as indicated by verysmall arrows 229.Diffuser 260 provides un-activated gases 155(3) only on a downstream, or process chamber side, as shown. - Embodiments herein may be rearranged and may form a variety of shapes. For example,
RF electrode 215 anddiffuser 235 are substantially radially symmetric in the embodiment illustrated inFIG. 2 , andinsulator 230 is a ring disposed against peripheral areas offace plate 225 anddiffuser 235, for an application that processes a circular semiconductor wafer asworkpiece 50. However, such features may be of any shape that is consistent with use as a plasma source. Moreover, the exact number and placement of features for introducing and distributing gases and/or plasma products, such as diffusers, face plates and the like, may also vary. For example, it would be possible to substitute an arrangement for generating an inductively coupled plasma, for the capacitively coupled plasma arrangement illustrated. Also, in a similar manner to diffuser 260 includinggas channels 250 to add un-activated gas 155(3) to plasma products fromplasma 245 as they enterprocess chamber 205, other components ofplasma processing system 200 may be configured to add or mixgases 155 with other gases and/or plasma products as they make their way through the system to processchamber 205. - In semiconductor processing, plasma etch processes for etching polycrystalline silicon (hereinafter sometimes referred to as “polysilicon” or “poly”) are often advantageously selective to silicon over silicon dioxide (hereinafter sometimes referred to as “oxide”). One process scenario in which a plasma etch is highly selective to poly over oxide is as follows. Polysilicon is often utilized as a “gate” electrode in so-called “MOS” transistors (MOS standing for Metal-Oxide-Semiconductor, although poly, instead of metal, is usually used for the gate electrode material). To form planar MOS transistors, a “source” and “drain” are formed in a silicon wafer, with the gate defining separation of, and influencing electrical conduction between, the source and drain. A poly layer may be deposited over a dielectric layer, typically SiO2. The SiO2 layer is typically very thin, to maximize field strength in this layer in the final transistor when a voltage is applied. The poly layer is typically thicker than the SiO2 layer, and poly depositions are often conformal such that minor crevices on the wafer surface fill with poly. When the poly layer is patterned, the poly in these crevices must be removed to prevent adjacent transistor gates from shorting to one another. The SiO2 layer may need to protect other parts of the wafer during the fabrication process, especially as portions of the poly layer are etched away to form the transistor gates. Therefore, a poly etch with low selectivity to oxide (e.g., a poly etch that etches oxide, as well) might etch through the SiO2 layer and damage the underlying silicon wafer areas that are intended to form the source and drain of the transistor.
- There are, however, device geometries and processes that benefit from a less selective poly etch. For example, recent technologies have moved away from the original, planar MOS process in which gates always overlie thin dielectric layers on a generally flat silicon wafer surface, and/or form capacitors with conductors across a thin dielectric layer. Certain processes etch trenches into silicon surfaces, then grow or deposit oxides on the trench surfaces to form trench devices, including trench capacitors having much larger capacitance per unit area than would be possible on the flat wafer surface. These and/or other processes generate silicon fins by, for example, generating vertical steps on a wafer, depositing poly conformally, and anisotropically etching back the poly in a vertical direction, clearing the poly from horizontal surfaces but leaving the fins behind as residual features against the vertical steps. Many other arrangements are in use or under study to reduce wafer area needed for fabrication of complex devices, to improve device performance, density and/or yield of working circuits per wafer. In such cases, a plasma etch having a selectivity that could be adjustable, or “tunable” from highly selective to poly over oxide, to less selective, or even to being selective to oxide over poly, is advantageous.
- Plasma etch embodiments herein have tunable selectivity, for example selectivity to Si over oxide. These embodiments typically utilize NF3 and NH3 gases as plasma source gases, and/or as gases that are mixed with plasma products before reaching the workpiece. Certain other gases such as He or Ar may additionally be used as carrier gases but generally do not take part in reactions; also, small percentages (less than about 10% of total gas flow) of oxygen may be added to help with plasma ignition and to boost reaction rates in the plasma. Generally speaking, in the plasma environment NF3 and NH3 dissociate, and/or some of the generated products thereof can combine, to form plasma products such as free H and F radicals, HF, N2, NH4F and/or NH4F.HF. Of these plasma products, plasma activation favors formation of free H and F radicals, HF and N2, while addition of un-activated NH3 favors formation of NH4F and/or NH4F.HF. When Si (e.g., polysilicon) is present, F and Si can react to form SiF4, while H and Si can react to form SiH4. When SiO2 is present, NH4F or NH4F.HF can react with SiO2 to form (NH4)2SiF6 and H2O; importantly, (NH4)2SiF6 generally forms and remains as a solid, but heat can cause it to dissociate to form SiF4, NH3 and HF. Also when SiO2 is present, NH4F and NH4F.HF can react with SiO2 to form SiH4F, H2O and NH3. Certain of these source gases may participate in reactions even when provided in un-activated form, for example, when provided as un-activated gas flow 155(3), in addition to plasma products from
plasma 245,FIG. 2 . - Etches described herein are also tunable with respect to selectivity of poly over silicon nitride. (The classic formulation of silicon nitride is Si3N4, but stoichiometry of silicon nitride can vary depending on the conditions in which it is generated. In this disclosure, Si3N4 and other stoichiometric variations of silicon nitride are referred to herein simply as SiN.) When SiN is present, NF3 and SiN can react to form NF and SiF4, while NF3, NH3 and SiN can react to form SiH4.HF and NH4F.HF.
- It has been discovered that in embodiments, certain ones of the input gases (e.g., NF3 and NH3) have different effects on the etching, as does the proportion of input gases that are activated by forming plasma therefrom, to un-activated gases (e.g., the proportion of
input gas 212 to gas 155(3), seeFIG. 2 ), so as to provide etches with tunable selectivity. Temperature and pressure have also been discovered to have effects. These effects can be utilized to tune an etch that fundamentally uses the same types of input gases to have different selectivities, as discussed below. As noted above, it is possible to adjust ratios of plasma products to un-activated gas (e.g., by adjusting ratios ofinput gas 212, which formsplasma 245, to gas 155(3), seeFIG. 2 ) to further vary these effects. Furthermore, in embodiments, the etches disclosed can be performed in such a way as to maintain very high selectivity to other materials that may be present on a wafer and should be left undisturbed, such as TiN or W. Still furthermore, the etches disclosed can, in embodiments, have differing etch rates such that an etch recipe can be tuned for high etch rate during one part of an etch sequence, and a different etch rate during another part of the etch sequence. - In an embodiment, a first variation of a plasma etch process (or “recipe”) has an initial ratio of NH3 to NF3 as a plasma source gas (e.g., input gas 212) that forms plasma products in
plasma 245, and adds further NH3 as an un-activated gas (e.g., gas 155(3)) resulting in a ratio ofinput gas 212 to gas 155(3) of about 10:1. The first recipe is performed at a pressure of 2 Torr at the wafer (e.g.,workpiece 50 in process chamber 205). The pressure of 2 Torr may be maintained, for example, by monitoring the pressure inprocess chamber 205 and adjusting all gas flows upwards or downwards until the measured pressure is within some tolerance of 2 Torr. The first recipe has a poly over oxide selectivity of about 20:1. In the first recipe, the dominant plasma reactions include NF3 and NH3 providing substantial amounts of free F and H radicals, which react aggressively with Si but less aggressively with SiO2. - A second variation of the etch recipe flows the same ratio of NH3 to NF3 as
input gas 212, but at a lower volume, and/or adds more NH3 as un-activated gas 155(3), as compared to the first recipe. The gas flows of the second etch recipe result in a ratio ofinput gas 212 to gas 155(3) of about 4:1 or 5:1. The second etch recipe is also performed at a pressure of 2 Torr. The resulting poly over oxide etch rate selectivity is about 2:1. The reduced etch rate selectivity is due to the adjusted gas flows favoring production of NH4F and NH4F.HF, which substantially etch SiO2, over production of F and H radicals, which preferentially etch Si. - A third variation of the etch recipe flows the same ratio of NH3 to NF3 as
input gas 212, and NH3 as un-activated gas 155(3), as compared to the second recipe, but is performed at a pressure of 6 Torr. The increased pressure reduces the mean free path of available F and H radicals, which again favors the etching of SiO2 over the etching of Si. The third etch recipe actually etches oxide faster than poly, with a resulting etch rate selectivity of oxide over poly of about 3:1. - The etch recipes noted above may proceed faster at relatively high wafer temperatures, such as greater than 100 C. The etch recipes noted above can also be highly selective to materials such as TiN and W that are commonly utilized in semiconductor processing at the so-called “frontend” of the process (e.g., layers where transistors and gates are formed and interconnected). That is, the etch rates of TiN and W can be negligibly low. Achieving high selectivity to TiN requires that temperature of a wafer being etched be maintained at less than about 125 C, at which temperature fluorine radicals begin to attack TiN.
- Because the etches described above continuously vary the ratio of NH3 and NF3 plasma products (e.g., free F and H radicals) to un-activated NH3 that is added, and the pressure at the workpiece (e.g., in process chamber 205), it is believed that the selectivity of poly to oxide etch rates can be continuously adjusted at least between the extremes noted above; that is, at least from 20:1 poly over oxide to 3:1 oxide over poly. This generates new possibilities for etch recipes, for example, the ability to tailor a plasma etch to provide a selectivity that accommodates process requirements for certain device geometries, or to change the etch selectivity to accommodate changes in device geometry. It may also simplify the deployment of plasma equipment for multiple, similar etch steps in semiconductor process flows, since the input chemistry utilizes the same gases in different ratios to produce different results. Because the types of input gases do not change, process aspects such as conditioning of chamber surfaces is expected not to change significantly, such that a single piece of processing equipment could be shifted rapidly from one process to another with little or no re-conditioning of the surfaces.
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FIG. 3 is a flowchart of a tunableplasma etch process 300.Plasma etch process 300 may be implemented, for example, byplasma processing system 100,FIG. 1 , and/or other plasma processing systems that utilizeplasma processing system 200,FIG. 2 . Instep 302, a plasma is generated in a controlled flow of a source gas that includes NH3 and NF3. An example ofstep 302 is flowing a mixture of NH3 and NF3 asinput gas 212,FIG. 2 , and generatingplasma 245 therefrom.Plasma 245 will include plasma products such as H and F free radicals, HF and N2, as shown in reaction (1) above. Instep 306, a controlled flow of un-activated NH3 is added to the stream of plasma products, to form an etch gas stream. An example ofstep 306 is flowing NH3 as un-activated gas 155(3),FIG. 2 . Step 310 controls pressure of the etch gas stream by adjusting the source gas and un-activated NH3 flows until the etch gas pressure is within a tolerance of a desired pressure. An example ofstep 310 is controlling pressure of the etch gas stream inprocess chamber 205,FIG. 2 , and adjusting flows ofinput gas 212 and un-activated gas 155(3) until the pressure inprocess chamber 205 is within a tolerance of the desired pressure. Step 312 adjusts a ratio of source gas to un-activated NH3 to vary etch rates of polysilicon and/or silicon dioxide to achieve the desired selectivity. Step 312 is done in concert withstep 310; that is, an adjustment to one of the source gas and un-activated NH3 will typically be performed with an adjustment to the other, so that the etch gas pressure and flow ratio are maintained simultaneously. -
FIG. 4 shows agraph 330 that illustrates test etch rate results of a Si etch having tunable selectivity to SiO2. In the etch illustrated, NF3 and NH3 may be supplied either as source gases 155(2) in the apparatus illustrated inFIG. 2 , and activated inremote plasma source 202, or may be supplied as source gases 155(1) and activated inplasma 245. In the test data illustrated, TiN etch rate was measured but remained at zero across all tested process conditions. When the un-activated NH3 flow rate was zero, Si had a low etch rate while SiO2 (labeled as “Oxide” in graph 330) had an etch rate of almost zero. Therefore with an un-activated NH3 flow rate of zero, the etch conditions were extremely selective to Si over oxide. As the un-activated NH3 flow rate increased, both Si and oxide etch rates increased, therefore the corresponding etch conditions were less selective to Si over oxide. At the highest un-activated NH3 flow rate tested, the oxide etch rate increased enough that the Si over oxide selectivity was only about 2:1. -
FIGS. 5, 6 and 7 illustrate a process application that advantageously utilizes a Si etch with tunable selectivity to oxide, as described herein. -
FIG. 5 illustrates an SiO2 region 350 on awafer section 340, formingtrenches TiN 360. AtopTiN layer 360 is apoly layer 370. A region labeled as A inFIG. 5 is illustrated in greater detail inFIG. 6 . -
FIG. 6 illustrates thatpoly layer 370 sits atop a region ofSiO 2 375 that includes a significant fraction of Si. It is important in this process thatSiO 2 375 not be etched significantly, so whenSiO 2 375 is exposed, an etch that is highly selective to poly over oxide should be employed, to minimize attack onSiO 2 375. Thus, the following discussion begins with generating a plasma in a controlled flow of source gas that includes NH3 and NF3, to form a stream of plasma products, and adding a controlled flow of un-activated NH3 to form an etch gas stream that interacts withpoly layer 370 andSiO 2 375. Referring toFIG. 4 , this suggests processing with an un-activated NH3 flow rate of zero, or nearly zero, to maximize selectivity of the etch to poly over oxide. However, low flows of NH3 are also associated with somewhat lower Si etch rate, which will make the etch process take longer if the low or zero flow rate of un-activated NH3 is used continually. A compromise that provides high etch throughput and high selectivity whenSiO 2 375 is exposed, is provided by utilizing the etch with tunable selectivity as described herein. Since the poly etch rate is at least approximately known fromgraph 330, and the thickness ofpoly layer 370 is known, the etch can start out with a relatively high un-activated NH3 flow rate. For example, a flow rate of 150 to 250, in the arbitrary units illustrated inFIG. 4 , can be used. This provides a high poly etch rate, and this etch rate is maintained for a time calculated as corresponding to etching partially, but not completely, through the region ofpoly 370 labeled as 390 inFIG. 6 . Then, either in a separate etch step or without interrupting the etch, the un-activated NH3 flow rate is brought down to zero, or near zero, while etching the region ofpoly 370 labeled as 395. This causes the poly etch rate to drop, but the corresponding oxide etch rate also drops to near zero, as illustrated inFIG. 4 , so the etch can completelyclear poly 370 without significant attack on Sirich SiO 2 375. All of the process conditions are also highly selective to TiN such that a reasonable overetch can be used to clear poly in topologically difficult locations such as sidewalls oftrenches TiN 360 intact.FIG. 7 illustrates the result ofetching wafer section 340 to formwafer section 340′. -
FIGS. 8A, 8B and 8C schematically illustrate a process sequence in which trace amounts of SiO2 are not successfully removed by prior art processing.FIG. 8A shows awafer section 400 that includes a portion of asilicon substrate 410 and overlying structures. Aspacer structure 450 is part of a fin-FET process. Certain recesses withinspacer structure 450 contain inter-layerdielectric oxides 430 that are generally to be retained in the etch sequence to be described. Other recesses containpolysilicon 420 that is to be removed; however the polysilicon is partially oxidized along grain boundaries thereof, shown as oxide traces 425, near the surface. Depth of oxide traces 425 is known with reasonable accuracy. Below the poly, adjacent tosilicon substrate 410 in the same recesses ofspacer structure 450 are thin layers of high dielectric constant oxide (“high-K oxide” hereinafter) 440 that are not to be etched at all. -
FIG. 8B schematically illustrates partial etching ofwafer section 400 with a highly selective poly etch to form a partially processedwafer section 401. The poly etch used is highly selective so as not to etch high-K oxide 440, but because of this selectivity, oxide traces 425 are also not etched.Wafer section 401 shows howwafer section 401 will look aspoly 420 is about one third etched away. -
FIG. 8C schematically illustrates further etching ofwafer section 400 with a highly selective poly etch to form a partially processedwafer section 402. Some oxide traces 425 remain in their original locations, while others, having lost all mechanical connection withspacer structure 450, migrate about the recesses to other locations, as shown. At least some of oxide traces 425 cause electrical defects in the finished semiconductor product, as they interfere with the structures that should be present at their locations, and/or cause photolithographic defects in further processing. -
FIGS. 9A, 9B, 9C and 9D schematically show how the structure shown aswafer section 400 can be more successfully processed with a Si etch with tunable selectivity to oxide, according to embodiments herein. Thus, the following discussion begins with generating a plasma in a controlled flow of source gas that includes NH3 and NF3, to form a stream of plasma products, and adding a controlled flow of un-activated NH3 to form an etch gas stream that interacts with the features ofwafer section 400.FIG. 9A shows wafer section 400 (identical to that shown inFIG. 8A ).FIG. 9B illustrates partial etching ofwafer section 400 with the etch gas stream, to form a partially processedwafer section 403. The etch gas stream used to formwafer section 403 includes enough NH3 to provide a nonzero oxide etch rate, that is, to make the etch only partially selective to poly over oxide. As shown inFIG. 9B , oxide traces 425 are etched along withpoly 420 in this part of the etch process. Once the etch penetrates past oxide traces 425 (for example, after a time at which a measured or calculated etch rate ensures etching to or beyond the known maximum depth of oxide traces 425) NH3 flow can be reduced to zero or near zero, to increase selectivity of poly over oxide.FIG. 9C illustrates partial etching ofwafer section 400 with the etch, to form a partially processedwafer section 403. The etch proceeds in this manner untilpoly 420 is completely removed, as shown inwafer section 405,FIG. 9D . The high selectivity of the Si etch having tunable selectivity to oxide ensures that high-K oxide 440 is not damaged aspoly 420 is removed. - Having described several embodiments, it will be recognized by those of skill in the art that various modifications, alternative constructions, and equivalents may be used without departing from the spirit of the invention. Additionally, a number of well-known processes and elements have not been described in order to avoid unnecessarily obscuring the present invention. Accordingly, the above description should not be taken as limiting the scope of the invention.
- Where a range of values is provided, it is understood that each intervening value, to the tenth of the unit of the lower limit unless the context clearly dictates otherwise, between the upper and lower limits of that range is also specifically disclosed. Each smaller range between any stated value or intervening value in a stated range and any other stated or intervening value in that stated range is encompassed. The upper and lower limits of these smaller ranges may independently be included or excluded in the range, and each range where either, neither or both limits are included in the smaller ranges is also encompassed within the invention, subject to any specifically excluded limit in the stated range. Where the stated range includes one or both of the limits, ranges excluding either or both of those included limits are also included.
- As used herein and in the appended claims, the singular forms “a”, “an”, and “the” include plural referents unless the context clearly dictates otherwise. Thus, for example, reference to “a process” includes a plurality of such processes and reference to “the electrode” includes reference to one or more electrodes and equivalents thereof known to those skilled in the art, and so forth. Also, the words “comprise,” “comprising,” “include,” “including,” and “includes” when used in this specification and in the following claims are intended to specify the presence of stated features, integers, components, or steps, but they do not preclude the presence or addition of one or more other features, integers, components, steps, acts, or groups.
Claims (20)
1. A plasma etch processing system that etches silicon and silicon dioxide with tunable selectivity, comprising:
a first NH3 flow controller that controls an NH3 plasma source gas stream;
an NF3 flow controller that controls an NF3 plasma source as stream;
a remote plasma source configured to apply RF energy to the NH3 plasma source gas stream and the NF3 plasma source gas stream, to generate a plasma product stream therefrom;
a second NH3 flow controller configured to control an un-activated NH3 gas stream;
apparatus for adding the un-activated NH3 gas stream to the plasma product stream to form an etch gas stream; and
a process chamber configured to expose a workpiece to the etch gas stream;
wherein etch rates of at least one of polysilicon and silicon dioxide on the workpiece, by the etch gas stream, are adjustable at least by varying a ratio of the plasma source gas stream to the un-activated NH3 gas stream.
2. The plasma etch processing system of claim 1 , further comprising:
a controller for adjusting at least the first and second NH3 flow controllers and the NF3 flow controller.
3. The plasma etch processing system of claim 2 , further comprising:
a pressure sensor for measuring pressure of the etch gas stream, wherein the controller monitors the pressure of the etch gas stream, and adjusts at least one of the first and second NH3 flow controllers and the NF3 flow controller, to control the pressure within a range of about 0.5 Torr to 10 Torr.
4. The plasma etch processing system of claim 2 , further comprising a temperature sensor, wherein the controller controls a temperature of the workpiece within a range of 100 C to 125 C.
5. The plasma etch processing system of claim 2 , further comprising a vacuum pump for evacuating at least one of the remote plasma source and the process chamber, wherein the controller controls the vacuum pump.
6. The plasma etch processing system of claim 2 , further comprising a temperature sensor, wherein the controller controls a temperature of the workpiece within a range of 100 C to 125 C.
7. A plasma etch processing system, comprising:
a process chamber configured to expose a workpiece to an etch gas stream;
a plasma source that generates a plasma product stream from a source gas stream that includes NH3 and NF3;
means for controlling a first NH3 flow of the source gas stream;
means for controlling an NF3 flow of the source gas stream;
means for controlling a second NH3 flow of an un-activated NH3 gas stream; and
a diffuser plate disposed between the plasma source and the process chamber that allows the plasma product stream to flow through the diffuser plate toward the process chamber, and adds the un-activated NH3 gas stream only on a process chamber side of the diffuser plate, to form an etch gas stream; and
a controller for controlling at least:
the plasma source,
the means for controlling the first NH3 flow of the source gas stream,
the means for controlling the NF3 flow of the source gas stream,
the means for controlling the second NH3 flow of the un-activated NH3 gas stream, and
a pressure within the process chamber;
such that the controller adjusts etch rates of at least one of polysilicon and silicon dioxide by the etch gas stream on the workpiece by varying at least one of the pressure and a ratio of the un-activated NH3 gas stream to the source gas stream.
8. The plasma etch processing system of claim 2 , wherein:
the controller is operable to provide a 10:1 ratio of the plasma source gas stream to the un-activated NH3 gas stream; and
at the 10:1 ratio, the system provides a 20:1 selectivity of an etch rate of the polysilicon over an etch rate of the silicon dioxide.
9. The plasma etch processing system of claim 8 , wherein:
the controller is operable to adjust the ratio of the plasma source gas stream to the un-activated NH3 gas stream from 10:1 to 5:1, and
at the 5:1 ratio, the system reduces the selectivity of the etch rate of the polysilicon over the etch rate of the silicon dioxide from 20:1 to 2:1.
10. The plasma etch processing system of claim 9 , wherein the controller is operable to adjust the ratio of the plasma source gas stream to the un-activated NH3 gas stream from 10:1 in a first etch sequence, to 5:1 in a second etch sequence.
11. The plasma etch processing system of claim 9 , wherein the controller is operable to adjust the ratio of the plasma source gas stream to the un-activated NH3 gas stream from 10:1 at a first time within a etch sequence, to 5:1 at a second time within the etch sequence.
12. The plasma etch processing system of claim 9 , wherein adjusting the ratio of the plasma source gas stream to the un-activated NH3 gas stream from 10:1 to 5:1 reduces a concentration of at least one of F and H radicals in the etch gas stream.
13. The plasma etch processing system of claim 3 , wherein:
the controller is operable to provide a 5:1 ratio of the plasma source gas stream to the un-activated NH3 gas stream;
the controller is operable to control the pressure at about 6 Torr, and
the system provides a 3:1 selectivity of an etch rate of the silicon dioxide over an etch rate of the polysilicon.
14. The plasma etch processing system of claim 7 , wherein the means for controlling the first NH3 flow, the means for controlling the NF3 flow and the means for controlling the second NH3 flow comprise mass flow controllers for each of the first NH3 flow, the NF3 flow and the second NH3 flow.
15. The plasma etch processing system of claim 7 , further comprising means for controlling a flow of one of He, Ar and oxygen that forms part of the etch gas stream.
16. The plasma etch processing system of claim 7 , wherein the controller is operable to adjust a ratio of the second NH3 flow of the un-activated NH3 gas stream to a flow of the source gas stream, from a first time to a second time within an etch sequence.
17. The plasma etch processing system of claim 7 , wherein:
the first time precedes the second time;
at the first time, the controller controls the second NH3 flow of the un-activated NH3 gas stream such that the un-activated NH3 gas stream produces an initial nonzero oxide etch rate at the first time; and
at the second time, the controller reduces the second NH3 flow of the un-activated NH3 gas stream to reduce the oxide etch rate, as compared to the initial nonzero oxide etch rate at the first time.
18. The plasma etch processing system of claim 7 , wherein the plasma source ignites a capacitively coupled plasma from the source gas stream to generate the plasma product stream.
19. A plasma etch processing system that etches silicon and silicon dioxide with adjustable selectivity, comprising:
a first flow controller that controls a first source gas stream of a hydrogen-containing source gas;
a second flow controller that controls a second source gas stream of a fluorine-containing source gas;
a remote plasma source configured to apply RF energy to the first and second source gas streams, to generate a plasma product stream therefrom;
a third flow controller that controls an un-activated gas stream;
apparatus for adding the un-activated gas stream to the plasma product stream to form an etch gas stream; and
a process chamber configured to expose a workpiece to the etch gas stream;
wherein etch rates of at least one of silicon and silicon dioxide on the workpiece, by the etch gas stream, are adjustable at least by varying a ratio of the plasma source gas stream to the un-activated gas stream.
20. The plasma etch processing system of claim 19 , wherein the un-activated gas stream comprises NH3.
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US15/158,396 US20160260588A1 (en) | 2014-09-24 | 2016-05-18 | SILICON ETCH PROCESS WITH TUNABLE SELECTIVITY TO SiO2 AND OTHER MATERIALS |
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US15/158,396 US20160260588A1 (en) | 2014-09-24 | 2016-05-18 | SILICON ETCH PROCESS WITH TUNABLE SELECTIVITY TO SiO2 AND OTHER MATERIALS |
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