US20170186727A1 - Discrete flexible interconnects for modules of integrated circuits - Google Patents

Discrete flexible interconnects for modules of integrated circuits Download PDF

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Publication number
US20170186727A1
US20170186727A1 US15/457,852 US201715457852A US2017186727A1 US 20170186727 A1 US20170186727 A1 US 20170186727A1 US 201715457852 A US201715457852 A US 201715457852A US 2017186727 A1 US2017186727 A1 US 2017186727A1
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Prior art keywords
flexible
package
integrated circuit
sensor
circuit system
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US15/457,852
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Mitul Dalal
Sanjay Gupta
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MC10 Inc
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MC10 Inc
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Definitions

  • the present disclosure relates generally to printed circuit boards (PCB) and integrated circuits (IC). More particularly, aspects of this disclosure relate to bendable, stretchable and compressible interconnects for flexible integrated circuitry.
  • microchips are generally rigid structures that are not designed to be bent or stretched during normal operating conditions.
  • IC's are typically mounted on a printed circuit board (PCB) that is as thick or thicker than the IC and similarly rigid.
  • PCB printed circuit board
  • Processes using thick and rigid printed circuit boards are generally incompatible with chips that are thinned or intended for applications requiring elasticity. Consequently, many schemes have been proposed for embedding microchips on or in a flexible polymeric substrate.
  • Flexible electronic circuitry employing an elastic substrate material allows the IC to be adapted into innumerable shapes. This, in turn, enables many useful device configurations not otherwise possible with rigid silicon-based electronic devices.
  • some flexible electronic circuit designs are unable to sufficiently conform to their surroundings because the interconnecting components are unable to flex in response to conformation changes. Such flexible circuit configurations are prone to damage, electronic degradation, and can be unreliable under rigorous use scenarios.
  • An “interconnect” in integrated circuits electrically couples the IC modules to distribute clock and other signals and provide power/ground throughout the electrical system.
  • Some flexible interconnects capable of bending and elasticity comprise metal segments that are embedded in an elastomer.
  • one known approach includes using micro-fabricated tortuous wires encased in a silicone elastomer to enable significant linear strain while maintaining conductivity.
  • Elastically stretchable metal interconnects tend to experience an increase in resistance with mechanical strain. There is therefore a continuing need for improved stretchable interconnects having improved stretchability, electrical conductivity, and related properties for rapid and reliable manufacture of flexible electronic circuitry in a variety of different configurations.
  • Embodiments of this disclosure include stretchable interconnect fabrication between modules of ultrathin embedded Silicon IC die. Aspects of this disclosure are for “extremely stretchable” electrical interconnects, flexible electronic circuitry using such extremely stretchable electrical interconnects, and methods of making and methods of using the same.
  • methods are disclosed for fabricating extremely stretchable integrated circuit electronics that are capable of stretching and compressing and bending while withstanding high translational strains, such as in the range of ⁇ 100% to 100% and, in some embodiments, up to ⁇ 100,000% to +100,000%, and/or high rotational strains, such as to an extent of 180° or greater, while substantially maintaining electrical performance found in an unstrained state.
  • high translational strains such as in the range of ⁇ 100% to 100% and, in some embodiments, up to ⁇ 100,000% to +100,000%, and/or high rotational strains, such as to an extent of 180° or greater, while substantially maintaining electrical performance found in an unstrained state.
  • electronics fabricated from rigid single-crystal semiconductor materials or other rigid substrate materials are comparatively inflexible and brittle—many cannot withstand strains of greater than about +/ ⁇ 2%.
  • embodiments of the present disclosure are directed to flexible multi-layer polymeric (e.g., silicon (Si)) interconnects that are fabricated separately from the IC islands and subsequently attached or coupled to connection pads on outer (top) surfaces of adjacent IC islands.
  • Si silicon
  • Embodiments of the present disclosure are also directed to metal interconnects (e.g., gold (Au) or copper (Cu) wirebonds) that are fabricated separately from the IC islands and subsequently attached or coupled to connection pads on outer (top) surfaces of adjacent IC islands. Also disclosed are stretchable interconnects fabricated from electrically conductive paste that are fabricated separately from the IC islands and subsequently attached or coupled to connection pads on outer (top) surfaces of adjacent IC islands. Advantages of one or more of the disclosed configurations may include reduction/elimination of wasted material, limited/no restrictions on the shape of the final package, minimal Loss of Yield, and reduced material costs and manufacturing costs.
  • metal interconnects e.g., gold (Au) or copper (Cu) wirebonds
  • stretchable interconnects fabricated from electrically conductive paste that are fabricated separately from the IC islands and subsequently attached or coupled to connection pads on outer (top) surfaces of adjacent IC islands.
  • the flexible integrated circuit system includes first and second discrete devices.
  • the first discrete device includes a first flexible multi-layer integrated circuit (IC) package with a first electrical connection pad on a first outer surface thereof.
  • the second discrete device includes a second flexible multi-layer integrated circuit (IC) package with a second electrical connection pad on a second outer surface thereof.
  • a discrete flexible interconnect is attached or coupled to and electrically connects the first electrical connection pad of the first discrete device to the second electrical connection pad of the second discrete device.
  • the IC apparatus comprises a first flexible multi-layer integrated circuit (IC) package with a first microchip embedded in or on a first flexible polymeric substrate, and a first pair of adhesive layers, each of which is disposed on a respective side of the first flexible polymeric substrate.
  • the first IC package also includes a first pair of conductive sheets, each of which is attached to the first flexible polymeric substrate by a respective one of the first adhesive layers, and a first electrical connection pad attached to an outer surface of one of the first conductive sheets.
  • the IC apparatus further comprises a second flexible multi-layer IC package that is separate and distinct from the first IC package.
  • the second IC package includes a second microchip embedded in or on a second flexible polymeric substrate, and a second pair of adhesive layers, each of which is disposed on a respective side of the second flexible polymeric substrate.
  • the second IC package also includes a second pair of conductive sheets, each of which is attached to the second flexible polymeric substrate by a respective one of the second adhesive layers, and a second electrical connection pad attached to an outer surface of one of the second conductive sheets.
  • a flexible interconnect which is separate and distinct from the first and second IC packages, electrically connects the first electrical connection pad to the second electrical connection pad and mechanically couples the first flexible multi-layer IC package to the second flexible multi-layer IC package.
  • the method includes: providing a first discrete device with a first flexible multi-layer integrated circuit (IC) package including a first outer surface with a first electrical connection pad; providing a second discrete device with a second flexible multi-layer integrated circuit (IC) package including a second outer surface with a second electrical connection pad; and, electrically connecting a discrete flexible interconnect to the first electrical connection pad of the first discrete device and the second electrical connection pad of the second discrete device.
  • IC flexible multi-layer integrated circuit
  • the flexible interconnect may comprise one or more pliant metal wires.
  • Each of the pliant metal wires may comprise in-plane loops or out-of-plane-loops, or both, configured to increase flexibility.
  • the flexible interconnect may comprise a pliant multi-layer semiconductor.
  • the first flexible multi-layer IC package, the second flexible multi-layer IC package, and the pliant multi-layer semiconductor of the flexible interconnect all comprise common layers of materials, according to some embodiments.
  • the flexible interconnect may comprise a conductive substrate fabricated from an electrically conductive paste.
  • the flexible interconnect may comprise a web of metallic interconnects printed onto the substrate.
  • One or more or all of the disclosed configurations may be implemented as an “extremely stretchable” IC device.
  • FIG. 1 is a perspective-view illustration of an example of a flexible electronic circuit system with integrated circuit (IC) packages connected by pliant wirebonded interconnects in accord with aspects of the present disclosure.
  • IC integrated circuit
  • FIG. 2 is a cross-sectional side-view illustration of a representative flexible electronic circuit system with a plurality of multi-layer IC modules connected by pliant wirebonded interconnects in accord with aspects of the present disclosure.
  • FIG. 3 is a cross-sectional side-view illustration of a representative flexible electronic circuit system with a plurality of multi-layer IC modules connected by pliant multi-layer polymeric interconnects in accord with aspects of the present disclosure.
  • FIG. 4 is a cross-sectional side-view illustration of a representative flexible electronic circuit system with a plurality of multi-layer IC modules connected by pliant conductive-paste interconnects in accord with aspects of the present disclosure.
  • FIG. 5 is a process and assembly flow diagram for fabricating a flexible integrated circuit system in accord with aspects of the present disclosure.
  • the circuitry is capable of stretching and/or compressing and/or bending while withstanding high translational strains, such as in the range of ⁇ 100% to 100% and, in some embodiments, up to ⁇ 100,000% to +100,000%, and/or high rotational strains, such as to an extent of 180° or greater, without fracturing or breaking and while substantially maintaining electrical performance found in an unstrained state.
  • the discrete “islands” or “packages” mentioned herein are discrete operative devices, e.g., arranged in a “device island” arrangement, and are themselves capable of performing the functionality described herein, or portions thereof.
  • Such functionality of the operative devices can include, for example, integrated circuits, physical sensors (e.g. temperature, pH, light, radiation, etc.), biological sensors, chemical sensors, amplifiers, A/D and D/A converters, optical collectors, electro-mechanical transducers, piezoelectric actuators, light emitting electronics (e.g., LEDs), and any combination thereof.
  • a purpose and an advantage of using one or more standard ICs is to use high-quality, high-performance, and high-functioning circuit components that are readily accessible and mass-produced with well-known processes, and which provide a range of functionality and generation of data far superior to that produced by passive means.
  • the discrete islands may range from about, but not limited to, 10-100 micrometers ( ⁇ m) in size measured on an edge or by diameter.
  • FIG. 1 illustrates an example of a flexible integrated circuit (IC) system, designated generally as 10 , which may be adapted as or integrated into an “extremely stretchable” IC apparatus.
  • IC integrated circuit
  • the flexible IC system 10 of FIG. 1 comprises various electronic components (collectively referred to as “circuitry”), such as a laminated battery 12 , a set of microchips 14 , a sensor 16 , a sensor hub 18 , antenna 20 , and an assortment of integrated passive devices (IPD) 22 A, 22 B and 22 C.
  • the circuitry is applied, secured, embedded or otherwise affixed to substrate 24 , which is flexible—e.g., stretchable, bendable and/or compressible—as described herein.
  • the substrate 24 can be made of a plastic material or an elastomeric material, or combinations thereof.
  • suitable flexible elastomers for the IC substrate material include polymeric organosilicon compounds (commonly referred to as “silicones”), including Polydimethylsiloxane (PDMS).
  • PDMS Polydimethylsiloxane
  • Other non-limiting examples of materials suitable for the substrate 24 include polyimide, photopatternable silicon, SU8 polymer, PDS polydustrene, parylene and its derivatives and copolymers (parylene-N), ultrahigh molecular weight polyethylene, polyether ether ketones (PEEK), polyurethanes, polylactic acid, polyglycolic acid, polymer composites, silicones/siloxanes, polytetrafluoroethylene, polyamic acid, polymethyl acrylate, and combinations thereof.
  • the substrate 24 can take on any possible number of shapes, sizes, and configurations. In the illustrated example, the substrate is substantially flat and, in some embodiments, configured to be an elongated sheet or strip.
  • the circuitry of FIG. 1 comprises one or more sensors 16 (also termed “sensor devices”) to detect any of various parameters. These parameters can include, in any combination, thermal parameters (e.g., temperature), optical parameters (e.g., infrared energy), electrochemical and biochemical parameters, such as pH, enzymatic activity, blood components (e.g., glucose), ion concentrations, and protein concentrations, electrical parameters (e.g., resistance, conductivity, impedance, etc.), acoustic parameters, tactile parameters (e.g., pressure, surface characteristics, or other topographic features), etc.
  • thermal parameters e.g., temperature
  • optical parameters e.g., infrared energy
  • electrochemical and biochemical parameters such as pH, enzymatic activity, blood components (e.g., glucose), ion concentrations, and protein concentrations
  • electrical parameters e.g., resistance, conductivity, impedance, etc.
  • tactile parameters e.g., pressure, surface characteristics, or other topographic features
  • one or more of the sensors 16 may be a thermocouple, a silicon band gap temperature sensor, a thin-film resistance temperature device, an LED emitter, a photodetector, a piezoelectric sensor, an ultrasonic sensor, an ion sensitive field effect transistor, etc.
  • one or more of the sensors 16 can be coupled to a differential amplifier and/or a buffer and/or an analog to digital converter.
  • the sensor hub 18 which may be in the nature of a microcontroller or digital signal processor (DSP), operates to integrate data signals from the sensor(s) 16 and process such signals. Signals from the sensor(s) 16 can be processed using multiplexing techniques, and can be switched into and processed by one or a few amplifier/logic circuits, including one or more of the microchips 14 .
  • Battery 12 acts as a power source to supply power to the circuitry in the flexible IC system 10 of FIG. 1 .
  • Any suitable battery which is small in size and has a sufficiently long life with a suitable amp-hour capacity may be employed. It is also within the scope of this disclosure to employ alternative means for powering the system 10 , including external power supplies.
  • the flexible IC system 10 also includes a data transmission facility with an RF antenna 20 to wirelessly communicate with external devices.
  • the antenna 20 can take on various forms, including a printed trace antenna coil with vias, which may be operable as a low frequency, high frequency or ultra-high frequency antenna. Other forms of wired and wireless signal transmission are also within the scope of this disclosure.
  • Each integrated passive device (IPD) 22 A- 22 C may comprise, as some non-limiting examples, a filter, a transformer, a photodiode, LED, TUFT, electrode, semiconductor, duplexer, coupler, phase shifter, thin-film device, circuit element, control elements, capacitors, resistors, inductors, buffer or other passive component.
  • IPD's 22 A- 22 C can be fabricated as standalone devices each having a silicon chip that may be connected to an active integrated circuit (e.g., a microprocessor).
  • the illustrated circuitry is configured in applicable manners, such as those described herein, to be stretchable or compressible and/or to accommodate such stretching/compressing of the substrate 24 .
  • the illustrated circuitry is configured in applicable manners, such as those described herein, to be bendable and/or accommodate such bending of the substrate.
  • each of the illustrated modules or “islands” is connected to one or more adjacent modules with flexible wirebonded interconnects, some of which are designated generally as 26 in FIG. 1 .
  • connection point of the individual interconnects to a device island may be anywhere along the device island edge, or may be at a point on the top surface of the device island (i.e., the surface opposite the substrate 24 ).
  • the bond wires 26 are attached to externally mounted bond pads 28 on the modules and extend to a corresponding externally mounted bond pad 28 on an adjacent module.
  • the bond wires can be attached through any known wirebonding technique, such as: ultrasonic bonding which uses a combination of pressure and ultrasonic vibration bursts to form a metallurgical cold weld; thermocompression bonding which uses a combination of pressure and elevated temperature to form a weld; and thermosonic bonding which uses a combination of pressure, elevated temperature, and ultrasonic vibration bursts to form a weld joint.
  • ultrasonic bonding which uses a combination of pressure and ultrasonic vibration bursts to form a metallurgical cold weld
  • thermocompression bonding which uses a combination of pressure and elevated temperature to form a weld
  • thermosonic bonding which uses a combination of pressure, elevated temperature, and ultrasonic vibration bursts to form a weld joint.
  • FIG. 2 there is shown a cross-sectional illustration of a representative flexible electronic circuit system, designated generally as 100 , with multi-layer IC modules connected via pliant wirebonded interconnects. While differing in appearance, the flexible IC system 100 of FIG. 2 can take on any of the various forms, optional configurations, and functional alternatives described herein with respect to the examples shown in FIGS. 1 and 3-5 , and thus can include any of the corresponding options and features. Like the system 10 of FIG. 1 , for example, the system 100 of FIG. 2 may be configured as an ultrathin, extremely stretchable integrated circuit system.
  • system 100 comprises an assortment of discrete devices—e.g., first, second and third discrete devices 102 A, 102 B and 102 C—that are arranged in a “device island” arrangement and electrically coupled by pliant wirebonded interconnects. It is contemplated that the system 100 comprise greater or fewer than the three discrete devices shown in FIG. 2 , each of which may take on alternative forms and configurations.
  • each of the discrete devices 102 A- 102 C includes a flexible multi-layer integrated circuit (IC) package capable of performing one or more of the functions described herein.
  • the multi-layer IC package of each discrete device for example, includes a respective microchip—first, second and third microchips 104 A, 104 B and 104 C—embedded in or on a respective flexible polymeric substrate—first, second and third substrates 106 A, 106 B and 106 C.
  • the polymeric substrates 106 A- 106 C may be fabricated in any industry-recognized manner and from any of the materials described above with respect to the substrate 24 of FIG. 1 .
  • the substrates 106 A- 106 C may be fabricated from a liquid crystal polymer or a polyimide polymer, such as KAPTON® film available from DuPontTM.
  • the polymeric substrate can have a thickness of about 60 ⁇ m to about 85 ⁇ m or, in some embodiments, about 25 ⁇ m to about 50 ⁇ m or, in some embodiments, about 7 ⁇ m to about 10 ⁇ m.
  • Each substrate may also comprise a layer of a flexible polymer disposed on a layer of conductive material, such as copper, gold, aluminum, or some combination thereof.
  • PCB metal layers can be patterned on opposing sides of the polymeric substrate 106 A- 106 C.
  • a pair of adhesive layers is disposed on opposing sides of the flexible polymeric substrates 106 A- 106 C of the multi-layer IC package of each discrete device 102 A- 102 C.
  • the first flexible multi-layer IC package includes a first pair of adhesive layers 108 A, each of which is attached to a respective side of the first polymeric substrate 106 A.
  • the second flexible multi-layer IC package includes a second pair of adhesive layers 108 B, each of which is attached to a respective side of the second polymeric substrate 106 B.
  • the third multi-layer IC package includes a third pair of adhesive layers 108 C, each of which is attached to a respective side of the third polymeric substrate 106 C.
  • Each layer of adhesive can have a thickness of about 8 ⁇ m to about 35 ⁇ m or, in some embodiments, about 20 ⁇ m to about 35 ⁇ m or, in some embodiments, about 12 ⁇ m to about 15 ⁇ m or, in some embodiments, about 8 ⁇ m to about 10 ⁇ m.
  • the adhesive can be a conductive adhesive or a non-conductive (dielectric) adhesive that is configured to withstand the temperatures of further processing. Conductive adhesive can be used to establish electrical communication between the conductive material of the substrate and conductive contact pads on the top surface of the thin chip.
  • the adhesive layers 108 A- 108 C can be a fluropolymer adhesive, a polyimide (PI) adhesive, an epoxy adhesive, or an acrylic adhesive, such as PYRALUX® Bond-Ply available from DuPontTM.
  • the material of adhesive layer can be selected such that it is a non-conductive electrical insulator capable of adhering the adjacent layers.
  • Each multi-layer IC package may optionally include additional adhesive layers, as represented in FIG. 2 by the additional pair of adhesive layers 108 D attached to the outer surfaces of the first adhesive layers 108 A. With the additional layers, the total thickness of the adhesive may be as large as 85 ⁇ m, according to some embodiments.
  • Each metallic sheet can have a thickness of about 5 ⁇ m to about 20 ⁇ m or, in some embodiments, about 15 ⁇ m to about 20 ⁇ m or, in some embodiments, about 10 ⁇ m to about 12 ⁇ m or, in some embodiments, about 5 ⁇ m to about 8 ⁇ m.
  • Electrically conductive metallic layers can be fabricated, for example, from copper or aluminum or a combination thereof.
  • the third multi-layer IC package includes a third pair of vias 112 C that extend through a (top) conductive sheet 110 C and corresponding (top) adhesive layer 108 C to the second microchip 104 C.
  • the vias can be electroplated or filled through sputtering or other known technique to create electrical connections from the top conductive layer to an electrical contact pad of the chip.
  • the conductive layers can then be patterned and an overlay can be applied to the outer surface of each conductive layer.
  • the overlay is non-conductive polymer.
  • each discrete device 102 A- 102 C On the outer surface of each discrete device 102 A- 102 C are one or more electrical connection pads 114 A, 114 B and 114 C, respectively, for electrically coupling with adjacent devices.
  • the first discrete device 102 A is shown with two electrical connection pads 114 A on the top surface of the first multi-layer IC package to provide electrical communication with the first microchip 104 A
  • the second discrete device 102 B is shown with two electrical connection pads 114 B on the top surface of the second multi-layer IC package to provide electrical communication with the second microchip 104 B.
  • the third discrete device 102 C is shown with at least one electrical connection pad 114 C on the top surface of the third multi-layer IC package to provide electrical communication with the third microchip 104 C.
  • the first discrete device 102 A includes a corresponding set of surface-mount-technology (SMT) components 118 A mounted on the first outer surface of the first flexible multi-layer IC package
  • the second discrete device 102 B includes a second set of SMT components 118 B mounted on the outer surface of the second flexible multi-layer IC package.
  • SMT surface-mount-technology
  • one or more or all of the illustrated multi-layer IC packages comprise additional or fewer layers than the sandwich constructions shown in FIG. 2 .
  • layer in the description and claims does not necessarily require that particular segment of the sandwich construction be continuous or span the entirety of (i.e., be coextensive with) all remaining layers unless otherwise explicitly stated in the claims. While preferable in some applications, it is not necessary in practice that the adhesive layers of each package be fabricated from the same material and the conductive layers be fabricated from the same material.
  • the individual packages may be vacuum laminated as discrete, unitary structures prior to electrical coupling with one or more adjacent devices.
  • Discrete flexible interconnects are attached to and electrically connect the electrical connection pad of one discrete device to the electrical connection pad of another discrete device.
  • a discrete flexible interconnect in the form of a curvilinear wirebond 120 AB is attached or coupled to and electrically connects a first (right) electrical connection pad 114 A of the first discrete device 102 A to a second (left) electrical connection pad 114 B of the second discrete device 102 B.
  • a discrete flexible interconnect in the form of a curvilinear wirebond 120 AC is attached or coupled to and electrically connects a first (left) electrical connection pad 114 A of the first discrete device 102 A to a third (right) electrical connection pad 114 C of the third discrete device 102 C.
  • the flexible interconnects each comprise one or more pliant metal wires, e.g., made from copper or gold with a circular cross-section, each of which may comprise in-plane loops (one of which can be seen to the far right in FIG. 2 ) or out-of-plane-loops, or both, that increase the elasticity of the wire.
  • FIG. 3 illustrates another representative flexible electronic circuit system, designated generally as 200 , with multi-layer IC modules that are connected via pliant multi-layer polymeric interconnects.
  • the system 200 of FIG. 3 and the system 300 of FIG. 4 each comprises a similar assortment of discrete devices—e.g., first, second and third discrete devices 102 A, 102 B and 102 C—that are arranged in a “device island” arrangement and electrically coupled by pliant electrical interconnects.
  • the flexible IC systems 200 and 300 can take on any of the various forms, optional configurations, and functional alternatives described herein with respect to the other examples shown in the figures, and vice versa, unless explicitly or logically prohibited.
  • Discrete flexible interconnects mechanically attach to and electrically connect the electrical connection pads of one discrete device to the electrical connection pads of other discrete devices in FIG. 3 .
  • the top side of each module 102 A- 102 C is provided with a connection pad 114 A, 114 B, 114 C for electrically connecting to other packages.
  • a first discrete flexible interconnect in the form of a pliant multi-layer semiconductor 220 AB is attached or coupled to and electrically connects a first (right) electrical connection pad 114 A of the first discrete device 102 A to a second (left) electrical connection pad 114 B of the second discrete device 102 B.
  • a second discrete flexible interconnect in the form of a pliant multi-layer semiconductor 220 AC is attached to and electrically connects a first (left) electrical connection pad 114 A of the first discrete device 102 A to a third (right) electrical connection pad 114 C of the third discrete device 102 C.
  • the first discrete flexible interconnect in the form of a pliant multi-layer semiconductor 220 AB and the second discrete flexible interconnect in the form of a pliant multi-layer semiconductor 220 AC are attached to respective electrical connection pads 114 A, 114 B, 114 C using a traditional solder attach.
  • the discrete flexible IC modules 102 A- 102 C are built as separate packages with the IC embedded in the substrate.
  • Interconnects 220 AB, 220 AC are manufactured in separate PCB flex substrates from the IC modules 102 A- 102 C, and can be cut with a serpentine or other non-linear shape to provide stretchability. Examples of interconnects with serpentine shapes are depicted and described in U.S. Pat. Nos. 8,389,862 and 8,729,524, both of which are incorporated herein by reference in their respective entireties and for all purposes.
  • the top side of each module 102 A- 102 C is provided with a connection pad 114 A, 114 B, 114 C for electrically connecting to other packages.
  • any SMT components required for a particular IC can be mounted on the top surface of the package. It is possible to stack flexible modules on top of each other similar to Package-on-Package (PoP) technology using appropriate solder, etc. Examples of semiconductor devices having package-on-package (POP) configurations are disclosed in U.S. Pat. Nos. 7,696,618 and 7,250,675, both of which are incorporated herein by reference in their respective entireties. In so doing, the input-output connection points (I/Os) for each package can be minimized so as to restrict the number of required interconnections.
  • I/Os input-output connection points
  • the flexible interconnects 220 AB, 220 AC further comprise a pair of electrically conductive (polymeric or metallic) layers 210 A and 210 B, respectively, on opposing sides of the flexible polymeric substrates 206 A, 206 B.
  • These electrically conductive layers can be fabricated, for example, from copper or aluminum or a combination thereof.
  • First and second pairs of adhesive layers 208 A and 208 B are disposed on opposing sides of the flexible polymeric substrates 206 A, 206 B, respectively, covering one of the conductive layers 210 A, 210 B.
  • the adhesive layers 208 A, 208 B of the flexible interconnects 220 AB, 220 AC can be a fluropolymer adhesive, a polyimide (PI) adhesive, an epoxy adhesive, or an acrylic adhesive, such as PYRALUX® Bond-Ply.
  • PI polyimide
  • epoxy adhesive epoxy adhesive
  • acrylic adhesive such as PYRALUX® Bond-Ply.
  • FIG. 4 illustrates yet another representative flexible electronic circuit system, designated generally as 300 , this time utilizing pliant conductive-paste-based interconnects to connect the discrete multi-layer IC modules.
  • a first discrete flexible interconnect in the form of a conductive substrate fabricated from an electrically conductive paste 320 AB is attached or coupled to and electrically connects a first (right) electrical connection pad 114 A of the first discrete device 102 A to a second (left) electrical connection pad 114 B of the second discrete device 102 B.
  • a second discrete flexible interconnect in the form of a conductive substrate fabricated from an electrically conductive paste 320 AC is attached or coupled to and electrically connects a first (left) electrical connection pad 114 A of the first discrete device 102 A to a third (right) electrical connection pad 114 C of the third discrete device 102 C.
  • Each flexible interconnect 320 AB, 320 AC may comprise a web of metallic interconnects (e.g., copper or gold or a conductive polymer or paste) that printed or otherwise patterned, for example, using screen print or ink jet printing techniques onto the substrate.
  • FIG. 5 illustrates a representative method 400 for manufacturing flexible integrated circuits. This method will be described with reference to the various configurations and features shown in FIGS. 1 through 4 of the drawings; such reference is being provided purely by way of explanation and clarification.
  • the method 400 includes embedding a thin die in large panels, punching out known good flexible parts or “KGFP,” and sorting into waffle trays. Thus, the individual circuits can be tested before being punched out thereby reducing the potential for distributing malfunctioning parts.
  • the method 400 includes picking and placing the flex packages (e.g., the KGFP's are identified and sorted while any malfunctioning circuits are left) onto temporary rigid substrates (reusable substrate with disposable adhesive), as indicated at block 403 .
  • the adhesive strength can be modulated by light and/or heat.
  • wirebond flex package assemblies are placed on rigid substrates as a temporary carrier for copper wirebonding.
  • the method 400 proceeds to block 407 to encapsulate the top side of the devices and remove the temporary substrate from the bottom.
  • Block 409 includes encapsulating the bottom side of the devices and die cutting.
  • a method for assembling flexible integrated circuits includes, in any logical order and any logical combination: providing a first discrete device with a first flexible multi-layer integrated circuit (IC) package including a first outer surface with a first electrical connection pad; providing a second discrete device with a second flexible multi-layer integrated circuit (IC) package including a second outer surface with a second electrical connection pad; and electrically connecting a discrete flexible interconnect to the first electrical connection pad of the first discrete device and the second electrical connection pad of the second discrete device.
  • the flexible interconnect may comprise one or more pliant metal wires.
  • the flexible interconnect comprises a pliant multi-layer semiconductor or a conductive substrate fabricated from an electrically conductive paste.
  • the first multi-layer IC package may comprise a first microchip embedded in or on a first flexible polymeric substrate, a first adhesive layer on the first flexible polymeric substrate, and a first conductive sheet attached to the first flexible polymeric substrate by the first adhesive layer.
  • the second flexible multi-layer IC package may comprise a second microchip embedded in or on a second flexible polymeric substrate, a second adhesive layer on the second flexible polymeric substrate, and a second conductive sheet attached to the second flexible polymeric substrate by the first adhesive layer.

Abstract

Flexible interconnects, flexible integrated circuit systems and devices, and methods of making and using flexible integrated circuitry are presented herein. A flexible integrated circuit system is disclosed which includes first and second discrete devices that are electrically connected by a discrete flexible interconnect. The first discrete devices includes a first flexible multi-layer integrated circuit (IC) package with a first electrical connection pad on an outer surface thereof. The second discrete device includes a second flexible multi-layer integrated circuit (IC) package with a second electrical connection pad on an outer surface thereof. The discrete flexible interconnect is attached to and electrically connects the first electrical connection pad of the first discrete device to the second electrical connection pad of the second discrete device.

Description

    CLAIM OF PRIORITY AND CROSS-REFERENCE TO RELATED APPLICATION
  • This application claims the benefit of priority to U.S. Provisional Patent Application No. 62/060,147, which was filed on Oct. 6, 2014, and is incorporated herein by reference in its entirety.
  • TECHNICAL FIELD
  • The present disclosure relates generally to printed circuit boards (PCB) and integrated circuits (IC). More particularly, aspects of this disclosure relate to bendable, stretchable and compressible interconnects for flexible integrated circuitry.
  • BACKGROUND
  • Integrated circuits (IC) are the cornerstone of the information age and the foundation of today's information technology industries. The integrated circuit, a.k.a. “chip” or “microchip,” is a set of interconnected electronic components, such as transistors, capacitors, and resistors, which are etched or imprinted onto a tiny wafer of semiconducting material, such as silicon or germanium. Integrated circuits take on various forms including, as some non-limiting examples, microprocessors, amplifiers, Flash memories, application specific integrated circuits (ASICs), static random access memories (SRAMs), digital signal processors (DSPs), dynamic random access memories (DRAMs), erasable programmable read only memories (EPROMs), and programmable logic. Integrated circuits are used in innumerable products, including personal computers, laptop and tablet computers, smartphones, flat-screen televisions, medical instruments, telecommunication and networking equipment, airplanes, watercraft and automobiles.
  • Advances in integrated circuit technology and microchip manufacturing have led to a steady decrease in chip size and an increase in circuit density and circuit performance. The scale of semiconductor integration has advanced to the point where a single semiconductor chip can hold tens of millions to over a billion devices in a space smaller than a U.S. penny. Moreover, the width of each conducting line in a modern microchip can be made as small as a fraction of a nanometer. The operating speed and overall performance of a semiconductor chip (e.g., clock speed and signal net switching speeds) has concomitantly increased with the level of integration. To keep pace with increases in on-chip circuit switching frequency and circuit density, semiconductor packages currently offer higher pin counts, greater power dissipation, more protection, and higher speeds than packages of just a few years ago.
  • Conventional microchips are generally rigid structures that are not designed to be bent or stretched during normal operating conditions. In addition, IC's are typically mounted on a printed circuit board (PCB) that is as thick or thicker than the IC and similarly rigid. Processes using thick and rigid printed circuit boards are generally incompatible with chips that are thinned or intended for applications requiring elasticity. Consequently, many schemes have been proposed for embedding microchips on or in a flexible polymeric substrate. Flexible electronic circuitry employing an elastic substrate material allows the IC to be adapted into innumerable shapes. This, in turn, enables many useful device configurations not otherwise possible with rigid silicon-based electronic devices. However, some flexible electronic circuit designs are unable to sufficiently conform to their surroundings because the interconnecting components are unable to flex in response to conformation changes. Such flexible circuit configurations are prone to damage, electronic degradation, and can be unreliable under rigorous use scenarios.
  • Many flexible circuits now employ stretchable and bendable interconnects that remain intact while the system stretches and bends. An “interconnect” in integrated circuits electrically couples the IC modules to distribute clock and other signals and provide power/ground throughout the electrical system. Some flexible interconnects capable of bending and elasticity comprise metal segments that are embedded in an elastomer. For example, one known approach includes using micro-fabricated tortuous wires encased in a silicone elastomer to enable significant linear strain while maintaining conductivity. Elastically stretchable metal interconnects, however, tend to experience an increase in resistance with mechanical strain. There is therefore a continuing need for improved stretchable interconnects having improved stretchability, electrical conductivity, and related properties for rapid and reliable manufacture of flexible electronic circuitry in a variety of different configurations.
  • SUMMARY
  • Disclosed herein are flexible interconnects for modules of integrated circuits and methods of making and methods of using the same. Embodiments of this disclosure include stretchable interconnect fabrication between modules of ultrathin embedded Silicon IC die. Aspects of this disclosure are for “extremely stretchable” electrical interconnects, flexible electronic circuitry using such extremely stretchable electrical interconnects, and methods of making and methods of using the same. In at least some embodiments, methods are disclosed for fabricating extremely stretchable integrated circuit electronics that are capable of stretching and compressing and bending while withstanding high translational strains, such as in the range of −100% to 100% and, in some embodiments, up to −100,000% to +100,000%, and/or high rotational strains, such as to an extent of 180° or greater, while substantially maintaining electrical performance found in an unstrained state. Contrastingly, electronics fabricated from rigid single-crystal semiconductor materials or other rigid substrate materials are comparatively inflexible and brittle—many cannot withstand strains of greater than about +/−2%.
  • Conventional methods of manufacturing flexible electronic circuits involve fabricating the interconnects in the material that is embedding the IC modules as a continuous single-piece structure. These existing processes are not always desirable because they: (1) waste material; (2) restrict the shape of the final package to maximize substrate real estate; (3) result in Loss of Yield and increased cost for each faulty part; (4) increase material costs; and (4) are relatively expensive manufacturing processes. By way of contrast, embodiments of the present disclosure are directed to flexible multi-layer polymeric (e.g., silicon (Si)) interconnects that are fabricated separately from the IC islands and subsequently attached or coupled to connection pads on outer (top) surfaces of adjacent IC islands. Embodiments of the present disclosure are also directed to metal interconnects (e.g., gold (Au) or copper (Cu) wirebonds) that are fabricated separately from the IC islands and subsequently attached or coupled to connection pads on outer (top) surfaces of adjacent IC islands. Also disclosed are stretchable interconnects fabricated from electrically conductive paste that are fabricated separately from the IC islands and subsequently attached or coupled to connection pads on outer (top) surfaces of adjacent IC islands. Advantages of one or more of the disclosed configurations may include reduction/elimination of wasted material, limited/no restrictions on the shape of the final package, minimal Loss of Yield, and reduced material costs and manufacturing costs.
  • Aspects of the present disclosure are directed to a flexible integrated circuit system. The flexible integrated circuit system includes first and second discrete devices. The first discrete device includes a first flexible multi-layer integrated circuit (IC) package with a first electrical connection pad on a first outer surface thereof. In this regard, the second discrete device includes a second flexible multi-layer integrated circuit (IC) package with a second electrical connection pad on a second outer surface thereof. A discrete flexible interconnect is attached or coupled to and electrically connects the first electrical connection pad of the first discrete device to the second electrical connection pad of the second discrete device.
  • According to other aspects of the present disclosure, an extremely flexible IC apparatus is presented. The IC apparatus comprises a first flexible multi-layer integrated circuit (IC) package with a first microchip embedded in or on a first flexible polymeric substrate, and a first pair of adhesive layers, each of which is disposed on a respective side of the first flexible polymeric substrate. The first IC package also includes a first pair of conductive sheets, each of which is attached to the first flexible polymeric substrate by a respective one of the first adhesive layers, and a first electrical connection pad attached to an outer surface of one of the first conductive sheets. The IC apparatus further comprises a second flexible multi-layer IC package that is separate and distinct from the first IC package. The second IC package includes a second microchip embedded in or on a second flexible polymeric substrate, and a second pair of adhesive layers, each of which is disposed on a respective side of the second flexible polymeric substrate. The second IC package also includes a second pair of conductive sheets, each of which is attached to the second flexible polymeric substrate by a respective one of the second adhesive layers, and a second electrical connection pad attached to an outer surface of one of the second conductive sheets. A flexible interconnect, which is separate and distinct from the first and second IC packages, electrically connects the first electrical connection pad to the second electrical connection pad and mechanically couples the first flexible multi-layer IC package to the second flexible multi-layer IC package.
  • Other aspects of the present disclosure are directed to methods for making and methods for using flexible integrated circuits. In one aspect, the method includes: providing a first discrete device with a first flexible multi-layer integrated circuit (IC) package including a first outer surface with a first electrical connection pad; providing a second discrete device with a second flexible multi-layer integrated circuit (IC) package including a second outer surface with a second electrical connection pad; and, electrically connecting a discrete flexible interconnect to the first electrical connection pad of the first discrete device and the second electrical connection pad of the second discrete device.
  • For any of the disclosed configurations, the flexible interconnect may comprise one or more pliant metal wires. Each of the pliant metal wires may comprise in-plane loops or out-of-plane-loops, or both, configured to increase flexibility. For any of the disclosed configurations, the flexible interconnect may comprise a pliant multi-layer semiconductor. In this instance, the first flexible multi-layer IC package, the second flexible multi-layer IC package, and the pliant multi-layer semiconductor of the flexible interconnect all comprise common layers of materials, according to some embodiments. For any of the disclosed configurations, the flexible interconnect may comprise a conductive substrate fabricated from an electrically conductive paste. In this instance, the flexible interconnect may comprise a web of metallic interconnects printed onto the substrate. One or more or all of the disclosed configurations may be implemented as an “extremely stretchable” IC device.
  • The above summary is not intended to represent each embodiment or every aspect of the present disclosure. Rather, the foregoing summary merely provides an exemplification of some of the novel aspects and features set forth herein. The above features and advantages, and other features and advantages of the present disclosure, will be readily apparent from the following detailed description of representative embodiments and modes for carrying out the present invention when taken in connection with the accompanying drawings and the appended claims.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a perspective-view illustration of an example of a flexible electronic circuit system with integrated circuit (IC) packages connected by pliant wirebonded interconnects in accord with aspects of the present disclosure.
  • FIG. 2 is a cross-sectional side-view illustration of a representative flexible electronic circuit system with a plurality of multi-layer IC modules connected by pliant wirebonded interconnects in accord with aspects of the present disclosure.
  • FIG. 3 is a cross-sectional side-view illustration of a representative flexible electronic circuit system with a plurality of multi-layer IC modules connected by pliant multi-layer polymeric interconnects in accord with aspects of the present disclosure.
  • FIG. 4 is a cross-sectional side-view illustration of a representative flexible electronic circuit system with a plurality of multi-layer IC modules connected by pliant conductive-paste interconnects in accord with aspects of the present disclosure.
  • FIG. 5 is a process and assembly flow diagram for fabricating a flexible integrated circuit system in accord with aspects of the present disclosure.
  • The present disclosure is susceptible to various modifications and alternative forms, and some representative embodiments have been shown by way of example in the drawings and will be described in detail herein. It should be understood, however, that the invention is not intended to be limited to the particular forms disclosed. Rather, the disclosure is to cover all modifications, equivalents, combinations, subcombinations, and alternatives falling within the spirit and scope of the invention as defined by the appended claims.
  • DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS
  • This disclosure is susceptible of embodiment in many different forms. There are shown in the drawings, and will herein be described in detail, representative embodiments with the understanding that the present disclosure is to be considered as an exemplification of the principles of the present disclosure and is not intended to limit the broad aspects of the disclosure to the embodiments illustrated. To that extent, elements and limitations that are disclosed, for example, in the Abstract, Summary, and Detailed Description sections, but not explicitly set forth in the claims, should not be incorporated into the claims, singly or collectively, by implication, inference or otherwise. For purposes of the present detailed description, unless specifically disclaimed or logically prohibited: the singular includes the plural and vice versa; and the word “including” or “comprising” or “having” means “including without limitation.” Moreover, words of approximation, such as “about,” “almost,” “substantially,” “approximately,” and the like, can be used herein in the sense of “at, near, or nearly at,” or “within 3-5% of,” or “within acceptable manufacturing tolerances,” or any logical combination thereof, for example.
  • The terms “flexible” and “stretchable” and “bendable,” including roots and derivatives thereof, when used as an adjective to modify electrical circuitry, electrical systems, and electrical devices or apparatuses, are meant to encompass electronics that comprise at least some components having pliant or elastic properties such that the circuit is capable of being flexed, stretched and/or bent, respectively, without tearing or breaking or compromising their electrical characteristics. These terms are also meant to encompass circuitry having components (whether or not the components themselves are individually stretchable, flexible or bendable) that are configured in such a way so as to accommodate and remain functional when applied to a stretchable, bendable, inflatable, or otherwise pliant surface. In configurations deemed “extremely stretchable,” the circuitry is capable of stretching and/or compressing and/or bending while withstanding high translational strains, such as in the range of −100% to 100% and, in some embodiments, up to −100,000% to +100,000%, and/or high rotational strains, such as to an extent of 180° or greater, without fracturing or breaking and while substantially maintaining electrical performance found in an unstrained state.
  • The discrete “islands” or “packages” mentioned herein are discrete operative devices, e.g., arranged in a “device island” arrangement, and are themselves capable of performing the functionality described herein, or portions thereof. Such functionality of the operative devices can include, for example, integrated circuits, physical sensors (e.g. temperature, pH, light, radiation, etc.), biological sensors, chemical sensors, amplifiers, A/D and D/A converters, optical collectors, electro-mechanical transducers, piezoelectric actuators, light emitting electronics (e.g., LEDs), and any combination thereof. A purpose and an advantage of using one or more standard ICs (e.g., CMOS on single crystal silicon) is to use high-quality, high-performance, and high-functioning circuit components that are readily accessible and mass-produced with well-known processes, and which provide a range of functionality and generation of data far superior to that produced by passive means. The discrete islands may range from about, but not limited to, 10-100 micrometers (μm) in size measured on an edge or by diameter.
  • Referring now to the drawings, wherein like reference numerals refer to like components throughout the several views, FIG. 1 illustrates an example of a flexible integrated circuit (IC) system, designated generally as 10, which may be adapted as or integrated into an “extremely stretchable” IC apparatus. Many of the disclosed concepts are discussed with reference to the representative systems depicted in the drawings; the systems illustrated herein, however, are provided merely as exemplary applications by which the various inventive aspects and features of this disclosure can be applied. Thus, the novel aspects and features of the present disclosure are not per se limited to the particular arrangements and components presented in the drawings. Moreover, only selected components of the system(s) have been shown and will be described in additional detail hereinbelow. Nevertheless, the systems and devices discussed herein can include numerous additional and alternative features, and other well-known peripheral components, for example, for carrying out the various methods and functions disclosed herein. Some of the illustrated components are optional and, thus, can be removed.
  • The flexible IC system 10 of FIG. 1 comprises various electronic components (collectively referred to as “circuitry”), such as a laminated battery 12, a set of microchips 14, a sensor 16, a sensor hub 18, antenna 20, and an assortment of integrated passive devices (IPD) 22A, 22B and 22C. The circuitry is applied, secured, embedded or otherwise affixed to substrate 24, which is flexible—e.g., stretchable, bendable and/or compressible—as described herein. As such, the substrate 24 can be made of a plastic material or an elastomeric material, or combinations thereof. Examples of suitable flexible elastomers for the IC substrate material include polymeric organosilicon compounds (commonly referred to as “silicones”), including Polydimethylsiloxane (PDMS). Other non-limiting examples of materials suitable for the substrate 24 include polyimide, photopatternable silicon, SU8 polymer, PDS polydustrene, parylene and its derivatives and copolymers (parylene-N), ultrahigh molecular weight polyethylene, polyether ether ketones (PEEK), polyurethanes, polylactic acid, polyglycolic acid, polymer composites, silicones/siloxanes, polytetrafluoroethylene, polyamic acid, polymethyl acrylate, and combinations thereof. The substrate 24 can take on any possible number of shapes, sizes, and configurations. In the illustrated example, the substrate is substantially flat and, in some embodiments, configured to be an elongated sheet or strip.
  • The circuitry of FIG. 1 comprises one or more sensors 16 (also termed “sensor devices”) to detect any of various parameters. These parameters can include, in any combination, thermal parameters (e.g., temperature), optical parameters (e.g., infrared energy), electrochemical and biochemical parameters, such as pH, enzymatic activity, blood components (e.g., glucose), ion concentrations, and protein concentrations, electrical parameters (e.g., resistance, conductivity, impedance, etc.), acoustic parameters, tactile parameters (e.g., pressure, surface characteristics, or other topographic features), etc. In this regard, one or more of the sensors 16 may be a thermocouple, a silicon band gap temperature sensor, a thin-film resistance temperature device, an LED emitter, a photodetector, a piezoelectric sensor, an ultrasonic sensor, an ion sensitive field effect transistor, etc. For some implementations, one or more of the sensors 16 can be coupled to a differential amplifier and/or a buffer and/or an analog to digital converter. The sensor hub 18, which may be in the nature of a microcontroller or digital signal processor (DSP), operates to integrate data signals from the sensor(s) 16 and process such signals. Signals from the sensor(s) 16 can be processed using multiplexing techniques, and can be switched into and processed by one or a few amplifier/logic circuits, including one or more of the microchips 14.
  • Battery 12 acts as a power source to supply power to the circuitry in the flexible IC system 10 of FIG. 1. Any suitable battery which is small in size and has a sufficiently long life with a suitable amp-hour capacity may be employed. It is also within the scope of this disclosure to employ alternative means for powering the system 10, including external power supplies. According to some embodiments, the flexible IC system 10 also includes a data transmission facility with an RF antenna 20 to wirelessly communicate with external devices. The antenna 20 can take on various forms, including a printed trace antenna coil with vias, which may be operable as a low frequency, high frequency or ultra-high frequency antenna. Other forms of wired and wireless signal transmission are also within the scope of this disclosure. Each integrated passive device (IPD) 22A-22C may comprise, as some non-limiting examples, a filter, a transformer, a photodiode, LED, TUFT, electrode, semiconductor, duplexer, coupler, phase shifter, thin-film device, circuit element, control elements, capacitors, resistors, inductors, buffer or other passive component. IPD's 22A-22C can be fabricated as standalone devices each having a silicon chip that may be connected to an active integrated circuit (e.g., a microprocessor).
  • For embodiments where the substrate 24 is stretchable or compressible, the illustrated circuitry is configured in applicable manners, such as those described herein, to be stretchable or compressible and/or to accommodate such stretching/compressing of the substrate 24. Similarly, for embodiments where the substrate 24 is bendable, but not necessarily stretchable, the illustrated circuitry is configured in applicable manners, such as those described herein, to be bendable and/or accommodate such bending of the substrate. For example, each of the illustrated modules or “islands” is connected to one or more adjacent modules with flexible wirebonded interconnects, some of which are designated generally as 26 in FIG. 1. The connection point of the individual interconnects to a device island may be anywhere along the device island edge, or may be at a point on the top surface of the device island (i.e., the surface opposite the substrate 24). The bond wires 26 are attached to externally mounted bond pads 28 on the modules and extend to a corresponding externally mounted bond pad 28 on an adjacent module. The bond wires can be attached through any known wirebonding technique, such as: ultrasonic bonding which uses a combination of pressure and ultrasonic vibration bursts to form a metallurgical cold weld; thermocompression bonding which uses a combination of pressure and elevated temperature to form a weld; and thermosonic bonding which uses a combination of pressure, elevated temperature, and ultrasonic vibration bursts to form a weld joint.
  • Turning next to FIG. 2, there is shown a cross-sectional illustration of a representative flexible electronic circuit system, designated generally as 100, with multi-layer IC modules connected via pliant wirebonded interconnects. While differing in appearance, the flexible IC system 100 of FIG. 2 can take on any of the various forms, optional configurations, and functional alternatives described herein with respect to the examples shown in FIGS. 1 and 3-5, and thus can include any of the corresponding options and features. Like the system 10 of FIG. 1, for example, the system 100 of FIG. 2 may be configured as an ultrathin, extremely stretchable integrated circuit system. Moreover, system 100 comprises an assortment of discrete devices—e.g., first, second and third discrete devices 102A, 102B and 102C—that are arranged in a “device island” arrangement and electrically coupled by pliant wirebonded interconnects. It is contemplated that the system 100 comprise greater or fewer than the three discrete devices shown in FIG. 2, each of which may take on alternative forms and configurations.
  • In the embodiment of FIG. 2, each of the discrete devices 102A-102C includes a flexible multi-layer integrated circuit (IC) package capable of performing one or more of the functions described herein. The multi-layer IC package of each discrete device, for example, includes a respective microchip—first, second and third microchips 104A, 104B and 104C—embedded in or on a respective flexible polymeric substrate—first, second and third substrates 106A, 106B and 106C. The polymeric substrates 106A-106C may be fabricated in any industry-recognized manner and from any of the materials described above with respect to the substrate 24 of FIG. 1. Optionally, the substrates 106A-106C may be fabricated from a liquid crystal polymer or a polyimide polymer, such as KAPTON® film available from DuPont™. The polymeric substrate can have a thickness of about 60 μm to about 85 μm or, in some embodiments, about 25 μm to about 50 μm or, in some embodiments, about 7 μm to about 10 μm. Each substrate may also comprise a layer of a flexible polymer disposed on a layer of conductive material, such as copper, gold, aluminum, or some combination thereof. In an example, PCB metal layers can be patterned on opposing sides of the polymeric substrate 106A-106C.
  • One or more or all of the microchips 104A-104C may be a “thin chip” configuration with a thickness of about 2-7 μm or, in some embodiments, a thickness of about 5-7 μm or, in some embodiments, a thickness of about 3-5 μm or, in some embodiments, a thickness of about 2-3 μm. In the representative systems, methods and devices described herein, each thin chip can be one or more passive electronic devices and/or one or more active electronic devices. By comparison, a thin chip may be fabricated onto a silicon-based semiconductor die 104 with a thickness of approximately 35-50 μm or, in some embodiments, a thickness of approximately 15-25 μm or, in some embodiments, a thickness of approximately 10-15 μm, for example. Non-limiting examples of devices that can be embedded according to any of the principles described herein include an amplifier, a transistor, a photodiode array, a photodetector, a sensor, a light-emitting device, a photovoltaic device, a semiconductor laser array, an optical imaging device, a logic gate array, a microprocessor, an opto-electronic device, a microelectromechanical device, a microfluidic device, a nanoelectromechanical device, a thermal device, or other device structures.
  • A pair of adhesive layers is disposed on opposing sides of the flexible polymeric substrates 106A-106C of the multi-layer IC package of each discrete device 102A-102C. In an example, the first flexible multi-layer IC package includes a first pair of adhesive layers 108A, each of which is attached to a respective side of the first polymeric substrate 106A. Likewise, the second flexible multi-layer IC package includes a second pair of adhesive layers 108B, each of which is attached to a respective side of the second polymeric substrate 106B. In addition, the third multi-layer IC package includes a third pair of adhesive layers 108C, each of which is attached to a respective side of the third polymeric substrate 106C. Each layer of adhesive can have a thickness of about 8 μm to about 35 μm or, in some embodiments, about 20 μm to about 35 μm or, in some embodiments, about 12 μm to about 15 μm or, in some embodiments, about 8 μm to about 10 μm. The adhesive can be a conductive adhesive or a non-conductive (dielectric) adhesive that is configured to withstand the temperatures of further processing. Conductive adhesive can be used to establish electrical communication between the conductive material of the substrate and conductive contact pads on the top surface of the thin chip. In an example, the adhesive layers 108A-108C can be a fluropolymer adhesive, a polyimide (PI) adhesive, an epoxy adhesive, or an acrylic adhesive, such as PYRALUX® Bond-Ply available from DuPont™. Optionally, the material of adhesive layer can be selected such that it is a non-conductive electrical insulator capable of adhering the adjacent layers. Each multi-layer IC package may optionally include additional adhesive layers, as represented in FIG. 2 by the additional pair of adhesive layers 108D attached to the outer surfaces of the first adhesive layers 108A. With the additional layers, the total thickness of the adhesive may be as large as 85 μm, according to some embodiments.
  • As illustrated in FIG. 2, the flexible multi-layer IC package of each discrete device 102A-102C further comprises a pair of electrically conductive (polymeric or metallic) layers on opposing sides of the flexible polymeric substrates 106A-106C. For example, the first flexible multi-layer IC package includes a first pair of metallic sheets 110A attached via the first adhesive layers 108A to the first flexible polymeric substrate 106A. Likewise, the second multi-layer IC package includes a second pair of metallic sheets 110B attached via the second adhesive layers 108B to the second flexible polymeric substrate 106B. In addition, the third multi-layer IC package includes a third pair of metallic sheets 110C attached via the third adhesive layers 108C to the third flexible polymeric substrate 106C. Each metallic sheet can have a thickness of about 5 μm to about 20 μm or, in some embodiments, about 15 μm to about 20 μm or, in some embodiments, about 10 μm to about 12 μm or, in some embodiments, about 5 μm to about 8 μm. Electrically conductive metallic layers can be fabricated, for example, from copper or aluminum or a combination thereof.
  • One or more vias can be generated as channels (e.g., with a laser drill) extending through outer layers of each flexible multi-layer IC package to allow for conductive connections between different layers of the multi-layer stack. In FIG. 2, for example, the first multi-layer IC package includes a first pair of vias 112A that extend through a (top) conductive sheet 110A and corresponding (top) adhesive layer 108A to the first microchip 104A. In the same vein, the second multi-layer IC package includes a second pair of vias 112B that extend through a (top) conductive sheet 110B and corresponding (top) adhesive layer 108B to the second microchip 104B. Likewise, the third multi-layer IC package includes a third pair of vias 112C that extend through a (top) conductive sheet 110C and corresponding (top) adhesive layer 108C to the second microchip 104C. Once these vias have been created, the vias can be electroplated or filled through sputtering or other known technique to create electrical connections from the top conductive layer to an electrical contact pad of the chip. The conductive layers can then be patterned and an overlay can be applied to the outer surface of each conductive layer. In some implementations, the overlay is non-conductive polymer.
  • On the outer surface of each discrete device 102A-102C are one or more electrical connection pads 114A, 114B and 114C, respectively, for electrically coupling with adjacent devices. By way of non-limiting example, the first discrete device 102A is shown with two electrical connection pads 114A on the top surface of the first multi-layer IC package to provide electrical communication with the first microchip 104A, while the second discrete device 102B is shown with two electrical connection pads 114B on the top surface of the second multi-layer IC package to provide electrical communication with the second microchip 104B. Similarly, the third discrete device 102C is shown with at least one electrical connection pad 114C on the top surface of the third multi-layer IC package to provide electrical communication with the third microchip 104C. Optionally, the first discrete device 102A includes a corresponding set of surface-mount-technology (SMT) components 118A mounted on the first outer surface of the first flexible multi-layer IC package, and the second discrete device 102B includes a second set of SMT components 118B mounted on the outer surface of the second flexible multi-layer IC package.
  • It is contemplated that one or more or all of the illustrated multi-layer IC packages comprise additional or fewer layers than the sandwich constructions shown in FIG. 2. It should also be noted that the use of the term “layer” in the description and claims does not necessarily require that particular segment of the sandwich construction be continuous or span the entirety of (i.e., be coextensive with) all remaining layers unless otherwise explicitly stated in the claims. While preferable in some applications, it is not necessary in practice that the adhesive layers of each package be fabricated from the same material and the conductive layers be fabricated from the same material. Moreover, the individual packages may be vacuum laminated as discrete, unitary structures prior to electrical coupling with one or more adjacent devices.
  • Discrete flexible interconnects are attached to and electrically connect the electrical connection pad of one discrete device to the electrical connection pad of another discrete device. In accord with the flexible IC system 100 of FIG. 2, a discrete flexible interconnect in the form of a curvilinear wirebond 120AB is attached or coupled to and electrically connects a first (right) electrical connection pad 114A of the first discrete device 102A to a second (left) electrical connection pad 114B of the second discrete device 102B. Likewise, a discrete flexible interconnect in the form of a curvilinear wirebond 120AC is attached or coupled to and electrically connects a first (left) electrical connection pad 114A of the first discrete device 102A to a third (right) electrical connection pad 114C of the third discrete device 102C. In the illustrated example, the flexible interconnects each comprise one or more pliant metal wires, e.g., made from copper or gold with a circular cross-section, each of which may comprise in-plane loops (one of which can be seen to the far right in FIG. 2) or out-of-plane-loops, or both, that increase the elasticity of the wire. Examples of such in-plane loops and out-of-plane-loops are depicted and described in commonly owned U.S. Pat. No. 8,536,667, which is incorporated herein by reference in its entirety and for all purposes. Any in-plane or out-of-plane loops help to ensure a sufficient degree of stretchability and flexibility. These wirebonded interconnects are fabricated separately from and subsequently attached to the discrete flexible IC modules (e.g., using thermosonic wirebonding techniques). Proper solder joints and welds are created to attach the interconnects to the externally mounted pads and thereby ensure reliability of the interconnects.
  • FIG. 3 illustrates another representative flexible electronic circuit system, designated generally as 200, with multi-layer IC modules that are connected via pliant multi-layer polymeric interconnects. Like reference numerals are used in FIGS. 3 and 4 to indicate similar structure from FIG. 2. For example, the system 200 of FIG. 3 and the system 300 of FIG. 4 each comprises a similar assortment of discrete devices—e.g., first, second and third discrete devices 102A, 102B and 102C—that are arranged in a “device island” arrangement and electrically coupled by pliant electrical interconnects. Moreover, the flexible IC systems 200 and 300 can take on any of the various forms, optional configurations, and functional alternatives described herein with respect to the other examples shown in the figures, and vice versa, unless explicitly or logically prohibited.
  • Discrete flexible interconnects mechanically attach to and electrically connect the electrical connection pads of one discrete device to the electrical connection pads of other discrete devices in FIG. 3. The top side of each module 102A-102C is provided with a connection pad 114A, 114B, 114C for electrically connecting to other packages. According to the illustrated example, a first discrete flexible interconnect in the form of a pliant multi-layer semiconductor 220AB is attached or coupled to and electrically connects a first (right) electrical connection pad 114A of the first discrete device 102A to a second (left) electrical connection pad 114B of the second discrete device 102B. Likewise, a second discrete flexible interconnect in the form of a pliant multi-layer semiconductor 220AC is attached to and electrically connects a first (left) electrical connection pad 114A of the first discrete device 102A to a third (right) electrical connection pad 114C of the third discrete device 102C. According to some embodiments, the first discrete flexible interconnect in the form of a pliant multi-layer semiconductor 220AB and the second discrete flexible interconnect in the form of a pliant multi-layer semiconductor 220AC are attached to respective electrical connection pads 114A, 114B, 114C using a traditional solder attach.
  • The discrete flexible IC modules 102A-102C are built as separate packages with the IC embedded in the substrate. Interconnects 220AB, 220AC are manufactured in separate PCB flex substrates from the IC modules 102A-102C, and can be cut with a serpentine or other non-linear shape to provide stretchability. Examples of interconnects with serpentine shapes are depicted and described in U.S. Pat. Nos. 8,389,862 and 8,729,524, both of which are incorporated herein by reference in their respective entireties and for all purposes. The top side of each module 102A-102C is provided with a connection pad 114A, 114B, 114C for electrically connecting to other packages. Any SMT components required for a particular IC can be mounted on the top surface of the package. It is possible to stack flexible modules on top of each other similar to Package-on-Package (PoP) technology using appropriate solder, etc. Examples of semiconductor devices having package-on-package (POP) configurations are disclosed in U.S. Pat. Nos. 7,696,618 and 7,250,675, both of which are incorporated herein by reference in their respective entireties. In so doing, the input-output connection points (I/Os) for each package can be minimized so as to restrict the number of required interconnections.
  • The flexible multi-layer IC package of the first discrete device 102A, the flexible multi-layer IC package of the second discrete device 102B, and the multi-layer semiconductors of each flexible interconnect 220AB, 220AC may all comprise common layers of materials, according to some embodiments. For instance, according to some embodiments, each interconnect 220AB, 220AC comprises a polymeric substrate 206A and 206B, respectively, that may be fabricated from a liquid crystal polymer or a polyimide polymer, such as KAPTON® film. According to some embodiments, the flexible interconnects 220AB, 220AC further comprise a pair of electrically conductive (polymeric or metallic) layers 210A and 210B, respectively, on opposing sides of the flexible polymeric substrates 206A, 206B. These electrically conductive layers can be fabricated, for example, from copper or aluminum or a combination thereof. First and second pairs of adhesive layers 208A and 208B are disposed on opposing sides of the flexible polymeric substrates 206A, 206B, respectively, covering one of the conductive layers 210A, 210B. Similar to the adhesive layers 108A-108C of the discrete devices 102A-102C, the adhesive layers 208A, 208B of the flexible interconnects 220AB, 220AC can be a fluropolymer adhesive, a polyimide (PI) adhesive, an epoxy adhesive, or an acrylic adhesive, such as PYRALUX® Bond-Ply.
  • FIG. 4 illustrates yet another representative flexible electronic circuit system, designated generally as 300, this time utilizing pliant conductive-paste-based interconnects to connect the discrete multi-layer IC modules. According to the illustrated example, a first discrete flexible interconnect in the form of a conductive substrate fabricated from an electrically conductive paste 320AB is attached or coupled to and electrically connects a first (right) electrical connection pad 114A of the first discrete device 102A to a second (left) electrical connection pad 114B of the second discrete device 102B. Likewise, a second discrete flexible interconnect in the form of a conductive substrate fabricated from an electrically conductive paste 320AC is attached or coupled to and electrically connects a first (left) electrical connection pad 114A of the first discrete device 102A to a third (right) electrical connection pad 114C of the third discrete device 102C. Each flexible interconnect 320AB, 320AC may comprise a web of metallic interconnects (e.g., copper or gold or a conductive polymer or paste) that printed or otherwise patterned, for example, using screen print or ink jet printing techniques onto the substrate.
  • FIG. 5 illustrates a representative method 400 for manufacturing flexible integrated circuits. This method will be described with reference to the various configurations and features shown in FIGS. 1 through 4 of the drawings; such reference is being provided purely by way of explanation and clarification. At block 401, the method 400 includes embedding a thin die in large panels, punching out known good flexible parts or “KGFP,” and sorting into waffle trays. Thus, the individual circuits can be tested before being punched out thereby reducing the potential for distributing malfunctioning parts. Next, the method 400 includes picking and placing the flex packages (e.g., the KGFP's are identified and sorted while any malfunctioning circuits are left) onto temporary rigid substrates (reusable substrate with disposable adhesive), as indicated at block 403. The adhesive strength can be modulated by light and/or heat. At block 405, wirebond flex package assemblies are placed on rigid substrates as a temporary carrier for copper wirebonding. The method 400 proceeds to block 407 to encapsulate the top side of the devices and remove the temporary substrate from the bottom. Block 409 includes encapsulating the bottom side of the devices and die cutting.
  • Also presented herein is a method for assembling flexible integrated circuits. This method includes, in any logical order and any logical combination: providing a first discrete device with a first flexible multi-layer integrated circuit (IC) package including a first outer surface with a first electrical connection pad; providing a second discrete device with a second flexible multi-layer integrated circuit (IC) package including a second outer surface with a second electrical connection pad; and electrically connecting a discrete flexible interconnect to the first electrical connection pad of the first discrete device and the second electrical connection pad of the second discrete device. The flexible interconnect may comprise one or more pliant metal wires. Optionally or alternatively, the flexible interconnect comprises a pliant multi-layer semiconductor or a conductive substrate fabricated from an electrically conductive paste. The first multi-layer IC package may comprise a first microchip embedded in or on a first flexible polymeric substrate, a first adhesive layer on the first flexible polymeric substrate, and a first conductive sheet attached to the first flexible polymeric substrate by the first adhesive layer. Likewise, the second flexible multi-layer IC package may comprise a second microchip embedded in or on a second flexible polymeric substrate, a second adhesive layer on the second flexible polymeric substrate, and a second conductive sheet attached to the second flexible polymeric substrate by the first adhesive layer.
  • In some embodiments, the aforementioned methods each includes at least those steps shown in FIG. 5 and/or those steps enumerated above. It is also within the scope and spirit of the present disclosure to omit steps, include additional steps, and/or modify the order presented herein. It should be further noted that each of the foregoing methods can be representative of a single sequence of related steps; however, it is expected that each of these methods will be practiced in a systematic and repetitive manner.
  • The present disclosure is not limited to the precise construction and compositions disclosed herein; any and all modifications, changes, and variations apparent from the foregoing descriptions are within the spirit and scope of the disclosure as defined in the appended claims. Moreover, the present concepts expressly include any and all combinations and subcombinations of the preceding elements and aspects.

Claims (21)

1.-20. (canceled)
21. A flexible integrated circuit system comprising:
a first discrete device with a first integrated circuit (IC) package including a first outer surface with a first electrical connection pad;
a second discrete device with a second integrated circuit (IC) package including a second outer surface with a second electrical connection pad, at least one of the first IC package and the second IC package comprising a sensor device; and
a discrete flexible interconnect attached to and electrically connecting the first electrical connection pad of the first discrete device to the second electrical connection pad of the second discrete device.
22. The flexible integrated circuit system of claim 1, wherein the sensor device comprises at least one of a physical sensor, a biological sensor, a chemical sensor, an optical sensor, or any combination thereof.
23. The flexible integrated circuit system of claim 22, wherein the sensor device comprises the at least one physical sensor, and the at least one physical sensor includes a temperature sensor, a pH sensor, a radiation sensor, a tactile sensor, an acoustic sensor, or any combination thereof.
24. The flexible integrated circuit system of claim 23, wherein the temperature sensor includes a thermocouple, a silicon band gap temperature sensor, a thin-film resistance temperature device, or any combination thereof.
25. The flexible integrated circuit system of claim 23, wherein the at least one optical sensor includes a light-emitting diode (LED) emitter, a photodetector, an infrared sensor, or any combination thereof.
26. The flexible integrated circuit system of claim 22, wherein the sensor device comprises the at least one biological sensor, the at least one biological sensor being configured to detect an electrochemical parameter, a biochemical parameter, or any combination thereof.
27. The flexible integrated circuit system of claim 26, wherein at least one of the electrochemical parameter and the biochemical parameter is a pH level, an enzymatic activity, a blood glucose component, a protein concentration, or any combination thereof.
28. The flexible integrated circuit system of claim 1, wherein the sensor device is coupled to at least one of an amplifier, a buffer, an A/D converter, a D/A converter, an electro-mechanical transducer, a piezo-electric actuator, or any combination thereof.
29. The flexible integrated circuit system of claim 1, wherein at least one of the first IC package, and the second IC package comprises a sensor hub configured to integrate and process data signals from the sensor device.
30. The flexible integrated circuit system of claim 29, wherein the sensor hub comprises a microcontroller, a digital signal processor (DSP), an amplifier circuit, a logic circuit, a microchip, or any combination thereof.
31. The flexible integrated circuit system of claim 29, wherein the first IC package comprises a first sensor device and a first microchip and the second IC package comprises a second sensor device and a second microchip.
32. The flexible integrated circuit system of claim 29, further comprising a power source configured to supply power to the sensor device and/or the sensor hub.
33. The flexible integrated circuit system of claim 1, wherein at least one of the first IC package and the second IC package comprises one or more integrated passive devices.
34. The flexible integrated circuit system of claim 1, wherein the one or more integrated passive devices includes a filter, a transformer, a photodiode, an LED, an electrode, a semiconductor, a duplexer, a coupler, a phase shifter, a thin-film device, a circuit element, an control element, a capacitor, a resistor, an inductor, a buffer, or any combination thereof.
35. The flexible integrated circuit system of claim 1, wherein at least one of the first IC package and the second IC package comprises an RF antenna configured to wirelessly communicate with an external device.
36. The flexible integrated circuit system of claim 1, wherein at least one of the first IC package and the second IC package is a flexible IC package.
37. The flexible integrated circuit system of claim 1, wherein at least one of the first IC package and the second IC package is a multi-layer IC package.
38. The flexible integrated circuit system of claim 1, wherein the first IC package comprises a first sensor device embedded in or on a first flexible polymeric substrate, and the second IC package comprises a second sensor device embedded in or on a second flexible polymeric substrate.
39. The flexible integrated circuit system of claim 38, wherein the first IC package comprises a first adhesive layer on the first flexible polymeric substrate, and the second IC package comprises a second adhesive layer on the second flexible polymeric substrate.
40. The flexible integrated circuit system of claim 39, wherein the first IC package further comprises a first conductive layer coupled via the first adhesive layer to the first flexible polymeric substrate, and the second IC package further comprises a second conductive layer coupled via the second adhesive layer to the second flexible polymeric substrate.
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Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180130764A1 (en) * 2016-11-10 2018-05-10 Mitsubishi Electric Corporation High-frequency circuit
USD825537S1 (en) 2014-10-15 2018-08-14 Mc10, Inc. Electronic device having antenna
US10186546B2 (en) 2008-10-07 2019-01-22 Mc10, Inc. Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy
US10258282B2 (en) 2013-11-22 2019-04-16 Mc10, Inc. Conformal sensor systems for sensing and analysis of cardiac activity
US10277386B2 (en) 2016-02-22 2019-04-30 Mc10, Inc. System, devices, and method for on-body data and power transmission
US10296819B2 (en) 2012-10-09 2019-05-21 Mc10, Inc. Conformal electronics integrated with apparel
US10325951B2 (en) 2008-10-07 2019-06-18 Mc10, Inc. Methods and applications of non-planar imaging arrays
US10334724B2 (en) 2013-05-14 2019-06-25 Mc10, Inc. Conformal electronics including nested serpentine interconnects
US10383219B2 (en) 2008-10-07 2019-08-13 Mc10, Inc. Extremely stretchable electronics
US10447347B2 (en) 2016-08-12 2019-10-15 Mc10, Inc. Wireless charger and high speed data off-loader
CN110943097A (en) * 2018-09-22 2020-03-31 豪威科技股份有限公司 Image sensor package and related methods
US10673280B2 (en) 2016-02-22 2020-06-02 Mc10, Inc. System, device, and method for coupled hub and sensor node on-body acquisition of sensor information
US10986465B2 (en) 2015-02-20 2021-04-20 Medidata Solutions, Inc. Automated detection and configuration of wearable devices based on on-body status, location, and/or orientation
US11123011B1 (en) 2020-03-23 2021-09-21 Nix, Inc. Wearable systems, devices, and methods for measurement and analysis of body fluids
US11154235B2 (en) 2016-04-19 2021-10-26 Medidata Solutions, Inc. Method and system for measuring perspiration

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8363418B2 (en) * 2011-04-18 2013-01-29 Morgan/Weiss Technologies Inc. Above motherboard interposer with peripheral circuits
US9226402B2 (en) 2012-06-11 2015-12-29 Mc10, Inc. Strain isolation structures for stretchable electronics
US9295842B2 (en) 2012-07-05 2016-03-29 Mc10, Inc. Catheter or guidewire device including flow sensing and use thereof
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
KR20160040670A (en) 2013-08-05 2016-04-14 엠씨10, 인크 Flexible temperature sensor including conformable electronics
CA2925387A1 (en) 2013-10-07 2015-04-16 Mc10, Inc. Conformal sensor systems for sensing and analysis
WO2015103580A2 (en) 2014-01-06 2015-07-09 Mc10, Inc. Encapsulated conformal electronic systems and devices, and methods of making and using the same
JP6637896B2 (en) 2014-03-04 2020-01-29 エムシー10 インコーポレイテッドMc10,Inc. Conformal IC device with flexible multi-part encapsulated housing for electronic devices
US9899330B2 (en) * 2014-10-03 2018-02-20 Mc10, Inc. Flexible electronic circuits with embedded integrated circuit die
US10653332B2 (en) 2015-07-17 2020-05-19 Mc10, Inc. Conductive stiffener, method of making a conductive stiffener, and conductive adhesive and encapsulation layers
WO2017031129A1 (en) 2015-08-19 2017-02-23 Mc10, Inc. Wearable heat flux devices and methods of use
CN108290070A (en) 2015-10-01 2018-07-17 Mc10股份有限公司 Method and system for interacting with virtual environment
EP3359031A4 (en) 2015-10-05 2019-05-22 Mc10, Inc. Method and system for neuromodulation and stimulation
PL3446356T3 (en) * 2016-04-18 2021-05-31 Robert Bosch Gmbh Low profile sensor and electrochemical cell including same
US10485107B2 (en) * 2016-12-01 2019-11-19 Schlumberger Technology Corporation Downhole equipment using flexible circuits
CN108054490B (en) * 2017-12-08 2020-01-03 中国电子科技集团公司第五十四研究所 Local micro-spring low-stress assembly structure of multilayer flexible substrate
CN108766954B (en) * 2018-06-08 2020-05-22 西安微电子技术研究所 Heterogeneous substrate integrated structure and preparation method
US11479080B2 (en) 2018-10-19 2022-10-25 Systematic Power Manufacturing, Llc Hybrid energy power module for mobile electrical devices
US11329025B2 (en) * 2020-03-24 2022-05-10 Texas Instruments Incorporated Multi-chip package with reinforced isolation
JP2023541677A (en) * 2020-09-16 2023-10-03 グーグル エルエルシー Overlap Junction Flex Circuit Board Interconnect

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6414318B1 (en) * 1998-11-06 2002-07-02 Bridge Semiconductor Corporation Electronic circuit
US20050189640A1 (en) * 2003-11-13 2005-09-01 Grundy Kevin P. Interconnect system without through-holes
US20090218668A1 (en) * 2008-02-28 2009-09-03 Silicon Matrix Pte. Ltd. Double-side mountable MEMS package
US20100140763A1 (en) * 2008-12-04 2010-06-10 Zigmund Ramirez Camacho Integrated circuit packaging system with stacked paddle and method of manufacture thereof
US7989929B2 (en) * 2002-04-29 2011-08-02 Samsung Electronics Co., Ltd. Direct-connect signaling system
US7989946B2 (en) * 2008-07-02 2011-08-02 Intel Corporation Multimode signaling on decoupled input/output and power channels
US20130313709A1 (en) * 2011-12-22 2013-11-28 Todd A. Hinck Interconnection of a packaged chip to a die in a package utilizing on-package input/output interfaces
US20130335011A1 (en) * 2012-06-06 2013-12-19 Ruamoko MEMS, Inc. Microelectronic devices for harvesting kinetic energy and/or detecting motion, and associated systems and methods
US8648615B2 (en) * 2010-06-28 2014-02-11 Xilinx, Inc. Testing die-to-die bonding and rework
US20140191110A1 (en) * 2013-01-10 2014-07-10 Apple Inc. Proximity Sensors with Smudge Detection Capabilities
US20150348942A1 (en) * 2014-05-27 2015-12-03 SK Hynix Inc. Flexible stack packages having wing portions
US9253579B2 (en) * 2011-06-30 2016-02-02 Stmicroelectronics Ltd (Malta) Package for a MEMS sensor and manufacturing process thereof
US9409765B1 (en) * 2013-02-01 2016-08-09 Maxim Integrated Products, Inc. Method and apparatus for an isolating structure

Family Cites Families (259)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3716861A (en) 1971-03-22 1973-02-13 J Root Serpentine antenna mounted on a rotatable capacitive coupler
US3805427A (en) 1972-12-18 1974-04-23 H Epstein Medical alarm bracelet
CA1105565A (en) 1978-09-12 1981-07-21 Kaufman (John G.) Hospital Products Ltd. Electrosurgical electrode
US4416288A (en) 1980-08-14 1983-11-22 The Regents Of The University Of California Apparatus and method for reconstructing subsurface electrophysiological patterns
JPS59200495A (en) * 1983-04-27 1984-11-13 株式会社日立製作所 Multichip module
US4658153A (en) 1984-06-18 1987-04-14 Amnon Brosh Planar coil apparatus for providing a frequency output vs. position
US5050036A (en) * 1989-10-24 1991-09-17 Amdahl Corporation Liquid cooled integrated circuit assembly
US6387052B1 (en) 1991-01-29 2002-05-14 Edwards Lifesciences Corporation Thermodilution catheter having a safe, flexible heating element
JPH04290489A (en) 1991-03-19 1992-10-15 Shin Etsu Polymer Co Ltd Manufacture of heat seal connector and connection by means of the obtained connector
JP2655204B2 (en) 1991-04-05 1997-09-17 メドトロニック インコーポレーテッド Implantable medical device
JPH0587511A (en) 1991-07-24 1993-04-06 Yamaha Corp Bending detection device
US5491651A (en) 1992-05-15 1996-02-13 Key, Idea Development Flexible wearable computer
US5306917A (en) 1992-08-12 1994-04-26 Reliant Laser Corporation Electro-optical system for measuring and analyzing accumulated short-wave and long-wave ultraviolet radiation exposure
US6233491B1 (en) 1993-03-16 2001-05-15 Ep Technologies, Inc. Cardiac mapping and ablation systems
US5617870A (en) 1993-04-29 1997-04-08 Scimed Life Systems, Inc. Intravascular flow measurement system
US5326521A (en) 1993-05-26 1994-07-05 East Douglas A Method for preparing silicone mold tooling
CA2170402C (en) 1993-08-24 2000-07-18 Michael P. Allen Novel disposable electronic assay device
US5360987A (en) 1993-11-17 1994-11-01 At&T Bell Laboratories Semiconductor photodiode device with isolation region
US5454270A (en) 1994-06-06 1995-10-03 Motorola, Inc. Hermetically sealed pressure sensor and method thereof
US5567975A (en) 1994-06-30 1996-10-22 Santa Barbara Research Center Group II-VI radiation detector for simultaneous visible and IR detection
JPH08335663A (en) * 1995-06-08 1996-12-17 Sony Corp Semiconductor device and manufacture of semiconductor device
US6023638A (en) 1995-07-28 2000-02-08 Scimed Life Systems, Inc. System and method for conducting electrophysiological testing using high-voltage energy pulses to stun tissue
US5612513A (en) 1995-09-19 1997-03-18 Micron Communications, Inc. Article and method of manufacturing an enclosed electrical circuit using an encapsulant
US5646446A (en) * 1995-12-22 1997-07-08 Fairchild Space And Defense Corporation Three-dimensional flexible assembly of integrated circuits
SE9600334D0 (en) 1996-01-30 1996-01-30 Radi Medical Systems Combined flow, pressure and temperature sensor
JP3957803B2 (en) 1996-02-22 2007-08-15 キヤノン株式会社 Photoelectric conversion device
US5880369A (en) 1996-03-15 1999-03-09 Analog Devices, Inc. Micromachined device with enhanced dimensional control
US6027958A (en) * 1996-07-11 2000-02-22 Kopin Corporation Transferred flexible integrated circuit
US5817008A (en) 1996-10-31 1998-10-06 Spacelabs Medical, Inc. Conformal pulse oximetry sensor and monitor
US6225688B1 (en) * 1997-12-11 2001-05-01 Tessera, Inc. Stacked microelectronic assembly and method therefor
US6063046A (en) 1997-04-11 2000-05-16 Allum; John H. Method and apparatus for the diagnosis and rehabilitation of balance disorders
US20050096513A1 (en) 1997-11-11 2005-05-05 Irvine Sensors Corporation Wearable biomonitor with flexible thinned integrated circuit
US6479890B1 (en) 1998-01-22 2002-11-12 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Semiconductor microsystem embedded in flexible foil
JP3511895B2 (en) 1998-06-05 2004-03-29 株式会社村田製作所 Manufacturing method of ceramic multilayer substrate
US7209787B2 (en) 1998-08-05 2007-04-24 Bioneuronics Corporation Apparatus and method for closed-loop intracranial stimulation for optimal control of neurological disease
IT1310000B1 (en) 1999-01-26 2002-02-05 Consiglio Nazionale Ricerche OPTICAL FIBER SENSOR AND PHOTOCROMIC TRANSDUCER FOR PHOTOMETRY ERADIOMETRY AND RELATED METHOD
US20020082515A1 (en) 1999-07-01 2002-06-27 Campbell Thomas H. Thermography catheter
GB2355116B (en) 1999-10-08 2003-10-08 Nokia Mobile Phones Ltd An antenna assembly and method of construction
US6455930B1 (en) * 1999-12-13 2002-09-24 Lamina Ceramics, Inc. Integrated heat sinking packages using low temperature co-fired ceramic metal circuit board technology
US6641860B1 (en) 2000-01-03 2003-11-04 T-Ink, L.L.C. Method of manufacturing printed circuit boards
US6489178B2 (en) 2000-01-26 2002-12-03 Texas Instruments Incorporated Method of fabricating a molded package for micromechanical devices
AU5113401A (en) 2000-03-31 2001-10-15 Rita Medical Systems Inc Tissue biopsy and treatment apparatus and method
WO2001097276A1 (en) 2000-06-14 2001-12-20 Sekisui Chemical Co., Ltd. Microparticle arrangement film, electrical connection film, electrical connection structure, and microparticle arrangement method
US6511478B1 (en) 2000-06-30 2003-01-28 Scimed Life Systems, Inc. Medical probe with reduced number of temperature sensor wires
US6640120B1 (en) 2000-10-05 2003-10-28 Scimed Life Systems, Inc. Probe assembly for mapping and ablating pulmonary vein tissue and method of using same
US6775906B1 (en) 2000-10-20 2004-08-17 Silverbrook Research Pty Ltd Method of manufacturing an integrated circuit carrier
US6421016B1 (en) 2000-10-23 2002-07-16 Motorola, Inc. Antenna system with channeled RF currents
US6743982B2 (en) 2000-11-29 2004-06-01 Xerox Corporation Stretchable interconnects using stress gradient films
US6603440B2 (en) 2000-12-14 2003-08-05 Protura Wireless, Inc. Arrayed-segment loop antenna
US20030017848A1 (en) 2001-07-17 2003-01-23 Engstrom G. Eric Personalizing electronic devices and smart covering
US6944482B2 (en) 2001-01-22 2005-09-13 Wildseed Ltd. Visualization supplemented wireless mobile telephony
WO2002072192A2 (en) 2001-03-08 2002-09-19 Medtronic, Inc. Lead with adjustable angular and spatial relationships between electrodes
JP3788917B2 (en) * 2001-04-02 2006-06-21 日東電工株式会社 Method for manufacturing flexible multilayer printed circuit board
US6600363B2 (en) 2001-04-05 2003-07-29 Cornell Research Foundation, Inc. Folded floating-gate differential pair amplifier
US6477417B1 (en) 2001-04-12 2002-11-05 Pacesetter, Inc. System and method for automatically selecting electrode polarity during sensing and stimulation
KR100380107B1 (en) 2001-04-30 2003-04-11 삼성전자주식회사 Circuit board having a heating means and multichip package having hermetic sealing part
US6455931B1 (en) 2001-05-15 2002-09-24 Raytheon Company Monolithic microelectronic array structure having substrate islands and its fabrication
JP4638626B2 (en) 2001-08-01 2011-02-23 北川工業株式会社 Magnetic body molding method, magnetic body, and printed circuit board
AU2002330718A1 (en) 2001-09-03 2003-03-18 National Microelectronic Research Centre University College Cork - National University Of Ireland Co Integrated circuit structure and a method of making an integrated circuit structure
US6940729B2 (en) * 2001-10-26 2005-09-06 Staktek Group L.P. Integrated circuit stacking system and method
US7146221B2 (en) 2001-11-16 2006-12-05 The Regents Of The University Of California Flexible electrode array for artifical vision
EP1465700A4 (en) 2001-11-20 2008-06-11 California Inst Of Techn Neural prosthetic micro system
JP4398626B2 (en) * 2002-03-26 2010-01-13 パナソニック株式会社 Laminated circuit
US20040092806A1 (en) 2001-12-11 2004-05-13 Sagon Stephen W Microelectrode catheter for mapping and ablation
US6936855B1 (en) * 2002-01-16 2005-08-30 Shane Harrah Bendable high flux LED array
US20030162507A1 (en) 2002-02-20 2003-08-28 Vatt Gregory B. Semiconductor structure for high speed digital and radio frequency processing
US20060134713A1 (en) 2002-03-21 2006-06-22 Lifescan, Inc. Biosensor apparatus and methods of use
US6930608B2 (en) 2002-05-14 2005-08-16 Motorola, Inc Apparel having multiple alternative sensors and corresponding method
US6980777B2 (en) 2002-07-31 2005-12-27 Nokia Corporation Smart pouch cover for mobile device
US6965160B2 (en) 2002-08-15 2005-11-15 Micron Technology, Inc. Semiconductor dice packages employing at least one redistribution layer
US20040052052A1 (en) * 2002-09-18 2004-03-18 Rivera Rudy A. Circuit cooling apparatus
US7698909B2 (en) 2002-10-01 2010-04-20 Nellcor Puritan Bennett Llc Headband with tension indicator
US20040085469A1 (en) 2002-10-30 2004-05-06 Eastman Kodak Company Method to eliminate bus voltage drop effects for pixel source follower amplifiers
CA2505743A1 (en) 2002-11-14 2004-06-03 Ethicon Endo-Surgery, Inc. Methods and devices for detecting tissue cells
JP2004179258A (en) 2002-11-25 2004-06-24 Hamamatsu Photonics Kk Ultraviolet sensor
US20060106321A1 (en) 2003-01-16 2006-05-18 Galil Medical Ltd. Device, system, and method for detecting, localizing, and characterizing plaque-induced stenosis of a blood vessel
US6894265B2 (en) 2003-01-31 2005-05-17 Foveon, Inc. Vertical color filter sensor group and semiconductor integrated circuit fabrication method for fabricating same
US20040149921A1 (en) 2003-02-05 2004-08-05 Alexander Smyk Personal solar adviser
JP2004247690A (en) * 2003-02-17 2004-09-02 Sony Corp Multilayer printed circuit board and multilayer board
US7491892B2 (en) 2003-03-28 2009-02-17 Princeton University Stretchable and elastic interconnects
US7337012B2 (en) 2003-04-30 2008-02-26 Lawrence Livermore National Security, Llc Stretchable polymer-based electronic device
US7141874B2 (en) * 2003-05-14 2006-11-28 Matsushita Electric Industrial Co., Ltd. Electronic component packaging structure and method for producing the same
US7265298B2 (en) 2003-05-30 2007-09-04 The Regents Of The University Of California Serpentine and corduroy circuits to enhance the stretchability of a stretchable electronic device
CN1788481B (en) 2003-06-12 2010-04-21 诺基亚有限公司 Mobile communication device cover and method for its operation
US7413919B2 (en) 2003-06-20 2008-08-19 Acellent Technologies, Inc. Method of manufacturing a structural health monitoring layer
EP2382920A1 (en) 2003-08-20 2011-11-02 Philometron, Inc. Hydration monitoring
JP4050682B2 (en) 2003-09-29 2008-02-20 日東電工株式会社 Method for manufacturing flexible printed circuit board
US20050113744A1 (en) 2003-11-21 2005-05-26 Cyberkinetics, Inc. Agent delivery systems and related methods under control of biological electrical signals
KR20050066128A (en) 2003-12-26 2005-06-30 주식회사 팬택앤큐리텔 Change structure and method of memory card using change cover
US7150745B2 (en) 2004-01-09 2006-12-19 Barrx Medical, Inc. Devices and methods for treatment of luminal tissue
US20060003709A1 (en) 2004-06-30 2006-01-05 Nokia Corporation Protective enclosure for a mobile terminal
US7618260B2 (en) 2004-02-27 2009-11-17 Daniel Simon R Wearable modular interface strap
US20050203366A1 (en) 2004-03-12 2005-09-15 Donoghue John P. Neurological event monitoring and therapy systems and related methods
US7727228B2 (en) 2004-03-23 2010-06-01 Medtronic Cryocath Lp Method and apparatus for inflating and deflating balloon catheters
US7259030B2 (en) 2004-03-29 2007-08-21 Articulated Technologies, Llc Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices
US7302751B2 (en) 2004-04-30 2007-12-04 Hewlett-Packard Development Company, L.P. Method of fabricating a rat's nest RFID antenna
US7656673B1 (en) * 2004-05-25 2010-02-02 University Of South Florida Wireless micro-electro-opto-fluidic-mechanical foldable flex system
US7521292B2 (en) 2004-06-04 2009-04-21 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
US8217381B2 (en) 2004-06-04 2012-07-10 The Board Of Trustees Of The University Of Illinois Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics
EP2650906A3 (en) 2004-06-04 2015-02-18 The Board of Trustees of the University of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
EP1605502A1 (en) 2004-06-08 2005-12-14 Interuniversitair Microelektronica Centrum Vzw Transfer method for the manufacturing of electronic devices
US6987314B1 (en) 2004-06-08 2006-01-17 Amkor Technology, Inc. Stackable semiconductor package with solder on pads on which second semiconductor package is stacked
CN1969195A (en) 2004-06-17 2007-05-23 皇家飞利浦电子股份有限公司 Flexible and wearable radio frequency coil garments for magnetic resonance imaging
CN101091114A (en) 2004-08-31 2007-12-19 生命扫描苏格兰有限公司 Method of manufacturing an auto-calibrating sensor
KR100643756B1 (en) 2004-09-10 2006-11-10 삼성전자주식회사 Flexible device, flexible pressure sensor, and fabrication method thereof
US7335608B2 (en) * 2004-09-22 2008-02-26 Intel Corporation Materials, structures and methods for microelectronic packaging
JP2006108431A (en) 2004-10-06 2006-04-20 Sharp Corp Semiconductor device
JP4517845B2 (en) 2004-12-13 2010-08-04 日本電気株式会社 Flexible cable and method for manufacturing electronic device
US8118740B2 (en) 2004-12-20 2012-02-21 Ipventure, Inc. Moisture sensor for skin
US20090291508A1 (en) 2008-05-20 2009-11-26 Rapid Pathogen Screening Inc. Nanoparticles in diagnostic tests
CN101164356A (en) 2005-02-15 2008-04-16 沃达方集团有限公司 Improving security of wireless communication
GB0505826D0 (en) 2005-03-22 2005-04-27 Uni Microelektronica Ct Vsw Methods for embedding of conducting material and devices resulting from said methods
US7300631B2 (en) 2005-05-02 2007-11-27 Bioscale, Inc. Method and apparatus for detection of analyte using a flexural plate wave device and magnetic particles
US7649245B2 (en) * 2005-05-04 2010-01-19 Sun Microsystems, Inc. Structures and methods for a flexible bridge that enables high-bandwidth communication
EP1883915A4 (en) 2005-05-13 2010-06-23 Imbibo Inc Method for customizing cover for electronic device
US8688189B2 (en) 2005-05-17 2014-04-01 Adnan Shennib Programmable ECG sensor patch
US20060266475A1 (en) 2005-05-24 2006-11-30 American Standard Circuits, Inc. Thermally conductive interface
US20070031283A1 (en) 2005-06-23 2007-02-08 Davis Charles Q Assay cartridges and methods for point of care instruments
DK1909890T3 (en) 2005-07-01 2010-05-03 Imec Function for restoring a damaged nervous system
US20070027485A1 (en) 2005-07-29 2007-02-01 Kallmyer Todd A Implantable medical device bus system and method
US7769472B2 (en) 2005-07-29 2010-08-03 Medtronic, Inc. Electrical stimulation lead with conformable array of electrodes
JP4784606B2 (en) 2005-09-30 2011-10-05 パナソニック株式会社 Sheet composite electronic component and manufacturing method thereof
WO2007042963A1 (en) 2005-10-13 2007-04-19 Nxp B.V. Electronic device or circuit and method for fabricating the same
JP2007105316A (en) 2005-10-14 2007-04-26 Konica Minolta Sensing Inc Bioinformation measuring instrument
US7271393B2 (en) 2005-11-15 2007-09-18 Nokia Corporation UV radiation meter using visible light sensors
US7759167B2 (en) 2005-11-23 2010-07-20 Imec Method for embedding dies
AT503191B1 (en) 2006-02-02 2008-07-15 Austria Tech & System Tech PCB LAYER ELEMENT WITH AT LEAST ONE EMBEDDED COMPONENT AND METHOD FOR BEDDING AT LEAST ONE COMPONENT IN A LADDER PLATE ELEMENT
IL174211A0 (en) 2006-03-09 2007-07-04 Rotschild Carmel Method and system for using a cellular phone in water activities
EP2008303B1 (en) 2006-04-07 2010-06-16 Koninklijke Philips Electronics N.V. Elastically deformable integrated-circuit device
JP2009537226A (en) 2006-05-18 2009-10-29 エヌディーアイ メディカル, エルエルシー Portable assembly, system, and method for providing functional or therapeutic neural stimulation
US20080046080A1 (en) 2006-07-07 2008-02-21 Interuniversitair Microelektronica Centrum (Imec) Method for forming packaged microelectronic devices and devices thus obtained
FR2904508B1 (en) * 2006-07-28 2014-08-22 Saint Gobain ENCAPSULATED ELECTROLUMINESCENT DEVICE
JP5578509B2 (en) 2006-09-06 2014-08-27 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ Method for bonding stretchable components to an elastomeric substrate
US20080074383A1 (en) 2006-09-27 2008-03-27 Dean Kenneth A Portable electronic device having appearance customizable housing
US8046039B2 (en) 2006-10-20 2011-10-25 Lg Electronics Inc. Mobile terminal and case for mobile terminal
US8979755B2 (en) 2006-12-08 2015-03-17 The Boeing Company Devices and systems for remote physiological monitoring
US8124429B2 (en) * 2006-12-15 2012-02-28 Richard Norman Reprogrammable circuit board with alignment-insensitive support for multiple component contact types
DE102006060411B3 (en) 2006-12-20 2008-07-10 Infineon Technologies Ag Chip module and method for producing a chip module
US20100117660A1 (en) 2007-01-19 2010-05-13 Douglas Malcolm F Cable for a capacitive proximity sensor
US9944031B2 (en) 2007-02-13 2018-04-17 3M Innovative Properties Company Molded optical articles and methods of making same
US7851906B2 (en) 2007-03-26 2010-12-14 Endicott Interconnect Technologies, Inc. Flexible circuit electronic package with standoffs
US8761846B2 (en) 2007-04-04 2014-06-24 Motorola Mobility Llc Method and apparatus for controlling a skin texture surface on a device
US7693167B2 (en) 2007-05-22 2010-04-06 Rockwell Collins, Inc. Mobile nodal based communication system, method and apparatus
US8877565B2 (en) 2007-06-28 2014-11-04 Intel Corporation Method of forming a multilayer substrate core structure using sequential microvia laser drilling and substrate core structure formed according to the method
US20090000377A1 (en) 2007-06-29 2009-01-01 Shipps J Clay Brain impact measurement system
US8050047B2 (en) * 2007-07-12 2011-11-01 Stats Chippac Ltd. Integrated circuit package system with flexible substrate and recessed package
US20090015560A1 (en) 2007-07-13 2009-01-15 Motorola, Inc. Method and apparatus for controlling a display of a device
EP2178598A4 (en) 2007-08-17 2012-08-15 Isis Biopolymer Llc Iontophoretic drug delivery system
US20090088750A1 (en) 2007-09-28 2009-04-02 Tyco Healthcare Group Lp Insulating Boot with Silicone Overmold for Electrosurgical Forceps
US7739791B2 (en) 2007-10-26 2010-06-22 Delphi Technologies, Inc. Method of producing an overmolded electronic module with a flexible circuit pigtail
KR100919642B1 (en) 2007-12-17 2009-09-30 한국전자통신연구원 Directive Speaker and mobile station thereof
JP2009170173A (en) 2008-01-11 2009-07-30 Denso Corp El element, and manufacturing method thereof
JP4530180B2 (en) 2008-01-22 2010-08-25 Okiセミコンダクタ株式会社 Ultraviolet sensor and manufacturing method thereof
JP5743553B2 (en) 2008-03-05 2015-07-01 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ Stretchable and foldable electronic devices
EP2265171B1 (en) 2008-03-12 2016-03-09 The Trustees of the University of Pennsylvania Flexible and scalable sensor arrays for recording and modulating physiologic activity
US7619416B2 (en) 2008-04-17 2009-11-17 Universität Zürich Prorektorat Forschung Eidgenössische Technische Hochschule Coil assembly and multiple coil arrangement for magnetic resonance imaging
US8207473B2 (en) 2008-06-24 2012-06-26 Imec Method for manufacturing a stretchable electronic device
US20090322480A1 (en) 2008-06-30 2009-12-31 Robert Leon Benedict Rfid tag and method of vehicle attachment thereof
US8223325B2 (en) 2008-09-19 2012-07-17 Sensors For Medicine & Science, Inc. Optical sensor assembly
WO2010036807A1 (en) 2008-09-24 2010-04-01 The Board Of Trustees Of The University Of Illinois Arrays of ultrathin silicon solar microcells
US8389862B2 (en) 2008-10-07 2013-03-05 Mc10, Inc. Extremely stretchable electronics
US20100271191A1 (en) 2008-10-07 2010-10-28 De Graff Bassel Systems, devices, and methods utilizing stretchable electronics to measure tire or road surface conditions
WO2010042957A2 (en) 2008-10-07 2010-04-15 Mc10, Inc. Systems, devices, and methods utilizing stretchable electronics to measure tire or road surface conditions
EP2349440B1 (en) 2008-10-07 2019-08-21 Mc10, Inc. Catheter balloon having stretchable integrated circuitry and sensor array
US9123614B2 (en) 2008-10-07 2015-09-01 Mc10, Inc. Methods and applications of non-planar imaging arrays
US9119533B2 (en) 2008-10-07 2015-09-01 Mc10, Inc. Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy
US8097926B2 (en) 2008-10-07 2012-01-17 Mc10, Inc. Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy
US8372726B2 (en) 2008-10-07 2013-02-12 Mc10, Inc. Methods and applications of non-planar imaging arrays
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
US8056819B2 (en) 2008-10-14 2011-11-15 Hong Kong Applied Science And Technology Research Institute Co., Ltd. Miniature and multi-band RF coil design
FR2937511B1 (en) 2008-10-23 2014-05-16 Oreal DEVICE FOR DISTRIBUTING A PRODUCT WITH AUTOMATIC OR SEMI-AUTOMATIC ADJUSTMENT OF PRODUCT PROPERTIES THROUGH INTEGRATED ROOM SENSOR
EP2356680B1 (en) 2008-11-12 2015-04-08 Mc10, Inc. Extremely stretchable electronics
US20110101789A1 (en) 2008-12-01 2011-05-05 Salter Jr Thomas Steven Rf power harvesting circuit
WO2010082993A2 (en) 2008-12-11 2010-07-22 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
KR101332228B1 (en) * 2008-12-26 2013-11-25 메키트 에퀴지션 코포레이션 Chip packages with power management integrated circuits and related techniques
EP2386117A4 (en) 2009-01-12 2017-12-27 Mc10, Inc. Methods and applications of non-planar imaging arrays
GR1006723B (en) 2009-01-16 2010-03-09 ������������ ������������-������� ����������� ����������� ��������� ������� (���� ������� 5%) Integral or printed daisy-like coil
WO2010086033A1 (en) 2009-01-30 2010-08-05 Interuniversitair Microelektronica Centrum Vzw Stretchable electronic device
EP2392196B1 (en) 2009-01-30 2018-08-22 IMEC vzw Stretchable electronic device
EP2404171A4 (en) 2009-03-03 2016-01-27 Mc10 Inc Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy
TWI592996B (en) 2009-05-12 2017-07-21 美國伊利諾大學理事會 Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays
US8593256B2 (en) 2009-06-23 2013-11-26 Avery Dennison Corporation Washable RFID device for apparel tracking
US20100327387A1 (en) 2009-06-26 2010-12-30 Ichiro Kasai Avalanche Photodiode
CN102474009B (en) 2009-07-03 2015-01-07 株式会社村田制作所 Antenna and antenna module
CA2791403C (en) 2009-07-06 2017-10-17 Autonomous Identity Management Systems Inc. - Aims Gait-based authentication system
JP2011018805A (en) 2009-07-09 2011-01-27 Sumitomo Bakelite Co Ltd Film for semiconductor, and method of manufacturing semiconductor device
EP2275805A1 (en) 2009-07-16 2011-01-19 Acreo AB Moister sensor
WO2011127331A2 (en) 2010-04-07 2011-10-13 Mc10, Inc. Methods and apparatus for measuring technical parameters of equipment, tools and components via conformal electronics
US20130192356A1 (en) 2009-10-01 2013-08-01 Mc10, Inc. Methods and apparatus for measuring technical parameters of equipment, tools, and components via conformal electronics
WO2011041727A1 (en) 2009-10-01 2011-04-07 Mc10, Inc. Protective cases with integrated electronics
US20120065937A1 (en) 2009-10-01 2012-03-15 Mc10, Inc. Methods and apparatus for measuring technical parameters of equipment, tools and components via conformal electronics
US20110218756A1 (en) 2009-10-01 2011-09-08 Mc10, Inc. Methods and apparatus for conformal sensing of force and/or acceleration at a person's head
US8390516B2 (en) 2009-11-23 2013-03-05 Harris Corporation Planar communications antenna having an epicyclic structure and isotropic radiation, and associated methods
US10441185B2 (en) 2009-12-16 2019-10-15 The Board Of Trustees Of The University Of Illinois Flexible and stretchable electronic systems for epidermal electronics
WO2011084450A1 (en) 2009-12-16 2011-07-14 The Board Of Trustees Of The University Of Illinois Electrophysiology in-vivo using conformal electronics
US20130118255A1 (en) 2009-12-17 2013-05-16 Gilman Callsen Methods and apparatus for conformal sensing of force and/or change in motion
US8872663B2 (en) 2010-01-19 2014-10-28 Avery Dennison Corporation Medication regimen compliance monitoring systems and methods
WO2011094307A1 (en) 2010-01-26 2011-08-04 Meggitt ( San Juan Capistrano) , Inc. Measurement system using body mounted physically decoupled sensor
US8715204B2 (en) 2010-07-14 2014-05-06 Prima Temp, Inc. Wireless vaginal sensor probe
US8198109B2 (en) 2010-08-27 2012-06-12 Quarkstar Llc Manufacturing methods for solid state light sheet or strip with LEDs connected in series for general illumination
US8836101B2 (en) 2010-09-24 2014-09-16 Infineon Technologies Ag Multi-chip semiconductor packages and assembly thereof
US8506158B2 (en) 2010-10-12 2013-08-13 P.S.L. Limited Watch
DE102010042567B3 (en) 2010-10-18 2012-03-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for manufacturing a chip package and chip package
CN202478392U (en) 2010-10-20 2012-10-10 美敦力阿迪安卢森堡有限责任公司 Associated system of catheter device
EP3449856B1 (en) 2010-10-25 2023-06-28 Medtronic Ardian Luxembourg S.à.r.l. Device for evaluation and feedback of neuromodulation treatment
US8391947B2 (en) 2010-12-30 2013-03-05 Biosense Webster (Israel), Ltd. Catheter with sheet array of electrodes
KR20120079742A (en) * 2011-01-05 2012-07-13 삼성전자주식회사 Folded stacked package and method for manufacturing the same
US8472207B2 (en) * 2011-01-14 2013-06-25 Harris Corporation Electronic device having liquid crystal polymer solder mask and outer sealing layers, and associated methods
EP2484750A1 (en) 2011-02-07 2012-08-08 Ecole Polytechnique Fédérale de Lausanne (EPFL) Monitoring system for cell culture
US8581731B2 (en) 2011-02-16 2013-11-12 Connor Kent Purks Circuits, systems, and methods for monitoring and reporting foot impact, foot placement, shoe life, and other running/walking characteristics
WO2012125494A2 (en) 2011-03-11 2012-09-20 Mc10, Inc. Integrated devices to facilitate quantitative assays and diagnostics
JP2012218147A (en) 2011-04-11 2012-11-12 Imec Method for sealing microcavity
JP2014523633A (en) 2011-05-27 2014-09-11 エムシー10 インコーポレイテッド Electronic, optical and / or mechanical devices and systems and methods of manufacturing these devices and systems
US9018532B2 (en) 2011-06-09 2015-04-28 Multi-Fineline Electronix, Inc. Stretchable circuit assemblies
US20120316455A1 (en) 2011-06-10 2012-12-13 Aliphcom Wearable device and platform for sensory input
US8879276B2 (en) * 2011-06-15 2014-11-04 Power Gold LLC Flexible circuit assembly and method thereof
WO2013010171A1 (en) 2011-07-14 2013-01-17 Mc10, Inc. Detection of a force on a foot or footwear
US9757050B2 (en) 2011-08-05 2017-09-12 Mc10, Inc. Catheter balloon employing force sensing elements
WO2013022853A1 (en) 2011-08-05 2013-02-14 Mc10, Inc. Catheter balloon methods and apparatus employing sensing elements
US8702619B2 (en) 2011-08-26 2014-04-22 Symap Holding Limited Mapping sympathetic nerve distribution for renal ablation and catheters for same
US9579040B2 (en) 2011-09-01 2017-02-28 Mc10, Inc. Electronics for detection of a condition of tissue
US10163744B2 (en) * 2011-09-07 2018-12-25 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming a low profile dual-purpose shield and heat-dissipation structure
US20140221160A1 (en) 2011-09-08 2014-08-07 Paofit Holdings Pte. Ltd. Sensor Device and System for Fitness Equipment
US20130200268A1 (en) 2011-09-28 2013-08-08 Mc10, Inc. Electronics for detection of a property of a surface
DE112012004146T5 (en) 2011-10-05 2014-11-06 Mc10, Inc. Cardiac catheter using surface-true electronics for imaging
EP2626755B1 (en) 2012-02-10 2019-04-10 Nxp B.V. Calibration method, calibration device and measurement device
US20130215467A1 (en) 2012-02-21 2013-08-22 Zih Corp. Method and apparatus for implementing near field communications with a printer
US9184798B2 (en) 2012-03-12 2015-11-10 Broadcom Corporation Near field communications (NFC) device having adjustable gain
US20140121540A1 (en) 2012-05-09 2014-05-01 Aliphcom System and method for monitoring the health of a user
US20130321373A1 (en) 2012-05-31 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Electronic device, program, and recording medium
US9226402B2 (en) 2012-06-11 2015-12-29 Mc10, Inc. Strain isolation structures for stretchable electronics
US9247637B2 (en) 2012-06-11 2016-01-26 Mc10, Inc. Strain relief structures for stretchable interconnects
WO2014007871A1 (en) 2012-07-05 2014-01-09 Mc10, Inc. Catheter device including flow sensing
US9295842B2 (en) 2012-07-05 2016-03-29 Mc10, Inc. Catheter or guidewire device including flow sensing and use thereof
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
KR20150072415A (en) 2012-10-09 2015-06-29 엠씨10, 인크 Conformal electronics integrated with apparel
US9400349B2 (en) * 2012-11-09 2016-07-26 Apple Inc. Electronic device with display chassis structures
US20140188426A1 (en) 2012-12-27 2014-07-03 Steven FASTERT Monitoring hit count for impact events
CN103915409B (en) * 2012-12-28 2017-03-01 力林科技股份有限公司 Galvanic isolation element and its manufacture method
KR20150110570A (en) 2013-01-08 2015-10-02 엠씨10, 인크 Application for monitoring a property of a surface
US9668352B2 (en) * 2013-03-15 2017-05-30 Sumitomo Electric Printed Circuits, Inc. Method of embedding a pre-assembled unit including a device into a flexible printed circuit and corresponding assembly
US8998454B2 (en) * 2013-03-15 2015-04-07 Sumitomo Electric Printed Circuits, Inc. Flexible electronic assembly and method of manufacturing the same
WO2014185194A1 (en) * 2013-05-13 2014-11-20 株式会社村田製作所 Flexible circuit board, and flexible-circuit-board production method
US9706647B2 (en) 2013-05-14 2017-07-11 Mc10, Inc. Conformal electronics including nested serpentine interconnects
US20150019135A1 (en) 2013-06-03 2015-01-15 Mc10, Inc. Motion sensor and analysis
US9610440B2 (en) * 2013-06-10 2017-04-04 Iontera, Inc Systems, devices, and methods for transdermal delivery
EP3010360A4 (en) 2013-06-21 2017-02-22 Mc10, Inc. Band with conformable electronics
KR20160040670A (en) 2013-08-05 2016-04-14 엠씨10, 인크 Flexible temperature sensor including conformable electronics
US9407798B2 (en) * 2013-09-16 2016-08-02 Apple Inc. Electronic device having a flexible printed circuit biasing structure
US9209151B2 (en) * 2013-09-26 2015-12-08 General Electric Company Embedded semiconductor device package and method of manufacturing thereof
WO2015054506A2 (en) 2013-10-09 2015-04-16 Mc10, Inc. Utility gear including conformal sensors
CN105813545A (en) 2013-11-22 2016-07-27 Mc10股份有限公司 Conformal sensor systems for sensing and analysis of cardiac activity
CA2934245A1 (en) 2014-01-03 2015-07-09 Mc10, Inc. Catheter or guidewire device including flow sensing and use thereof
US20150194817A1 (en) 2014-01-03 2015-07-09 Mc10, Inc. Integrated devices for low power quantitative measurements
WO2015103580A2 (en) 2014-01-06 2015-07-09 Mc10, Inc. Encapsulated conformal electronic systems and devices, and methods of making and using the same
CN106030798A (en) 2014-02-24 2016-10-12 Mc10股份有限公司 Conformal electronics with deformation indicators
JP6637896B2 (en) 2014-03-04 2020-01-29 エムシー10 インコーポレイテッドMc10,Inc. Conformal IC device with flexible multi-part encapsulated housing for electronic devices
JP6661242B2 (en) 2014-03-12 2020-03-11 エムシー10 インコーポレイテッドMc10,Inc. Measuring device and method for quantifying assay changes
US9704735B2 (en) * 2014-08-19 2017-07-11 Intel Corporation Dual side solder resist layers for coreless packages and packages with an embedded interconnect bridge and their methods of fabrication

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6414318B1 (en) * 1998-11-06 2002-07-02 Bridge Semiconductor Corporation Electronic circuit
US7989929B2 (en) * 2002-04-29 2011-08-02 Samsung Electronics Co., Ltd. Direct-connect signaling system
US20050189640A1 (en) * 2003-11-13 2005-09-01 Grundy Kevin P. Interconnect system without through-holes
US20090218668A1 (en) * 2008-02-28 2009-09-03 Silicon Matrix Pte. Ltd. Double-side mountable MEMS package
US7989946B2 (en) * 2008-07-02 2011-08-02 Intel Corporation Multimode signaling on decoupled input/output and power channels
US20100140763A1 (en) * 2008-12-04 2010-06-10 Zigmund Ramirez Camacho Integrated circuit packaging system with stacked paddle and method of manufacture thereof
US8648615B2 (en) * 2010-06-28 2014-02-11 Xilinx, Inc. Testing die-to-die bonding and rework
US9253579B2 (en) * 2011-06-30 2016-02-02 Stmicroelectronics Ltd (Malta) Package for a MEMS sensor and manufacturing process thereof
US20130313709A1 (en) * 2011-12-22 2013-11-28 Todd A. Hinck Interconnection of a packaged chip to a die in a package utilizing on-package input/output interfaces
US20130335011A1 (en) * 2012-06-06 2013-12-19 Ruamoko MEMS, Inc. Microelectronic devices for harvesting kinetic energy and/or detecting motion, and associated systems and methods
US20140191110A1 (en) * 2013-01-10 2014-07-10 Apple Inc. Proximity Sensors with Smudge Detection Capabilities
US9409765B1 (en) * 2013-02-01 2016-08-09 Maxim Integrated Products, Inc. Method and apparatus for an isolating structure
US20150348942A1 (en) * 2014-05-27 2015-12-03 SK Hynix Inc. Flexible stack packages having wing portions

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10186546B2 (en) 2008-10-07 2019-01-22 Mc10, Inc. Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy
US10383219B2 (en) 2008-10-07 2019-08-13 Mc10, Inc. Extremely stretchable electronics
US10325951B2 (en) 2008-10-07 2019-06-18 Mc10, Inc. Methods and applications of non-planar imaging arrays
US10296819B2 (en) 2012-10-09 2019-05-21 Mc10, Inc. Conformal electronics integrated with apparel
US10334724B2 (en) 2013-05-14 2019-06-25 Mc10, Inc. Conformal electronics including nested serpentine interconnects
US10258282B2 (en) 2013-11-22 2019-04-16 Mc10, Inc. Conformal sensor systems for sensing and analysis of cardiac activity
USD825537S1 (en) 2014-10-15 2018-08-14 Mc10, Inc. Electronic device having antenna
US10986465B2 (en) 2015-02-20 2021-04-20 Medidata Solutions, Inc. Automated detection and configuration of wearable devices based on on-body status, location, and/or orientation
US10277386B2 (en) 2016-02-22 2019-04-30 Mc10, Inc. System, devices, and method for on-body data and power transmission
US10567152B2 (en) 2016-02-22 2020-02-18 Mc10, Inc. System, devices, and method for on-body data and power transmission
US10673280B2 (en) 2016-02-22 2020-06-02 Mc10, Inc. System, device, and method for coupled hub and sensor node on-body acquisition of sensor information
US11154235B2 (en) 2016-04-19 2021-10-26 Medidata Solutions, Inc. Method and system for measuring perspiration
US10447347B2 (en) 2016-08-12 2019-10-15 Mc10, Inc. Wireless charger and high speed data off-loader
US10290603B2 (en) * 2016-11-10 2019-05-14 Mitsubishi Electric Corporation High-frequency circuit
US20180130764A1 (en) * 2016-11-10 2018-05-10 Mitsubishi Electric Corporation High-frequency circuit
CN110943097A (en) * 2018-09-22 2020-03-31 豪威科技股份有限公司 Image sensor package and related methods
US11123011B1 (en) 2020-03-23 2021-09-21 Nix, Inc. Wearable systems, devices, and methods for measurement and analysis of body fluids

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