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Patentes

Citada por

Patente citante Fecha de presentación Fecha de emisión Cesionario original Título
US418043415 Dic 197725 Dic 1979Schweizerische Isola-WerkeMica paper containing cellulose
US448006027 Ene 198330 Oct 1984Corning Glass WorksMica-resin composite material
US477558617 Feb 19874 Oct 1988Armstrong World Industries, Inc.Paper, paper products, films composites and other silicate-polymer, construction materials
US503611823 May 199030 Jul 1991The Dow Chemical CompanyReinforced polymer compositions having improved distinctness of image
US51372175 Ago 199111 Ago 1992J.M. Huber CorporationMica deliminator
US614697919 Feb 199814 Nov 2000Silicon Genesis CorporationPressurized microbubble thin film separation process using a reusable substrate
US615590919 Feb 19985 Dic 2000Silicon Genesis CorporationControlled cleavage system using pressurized fluid
US615982419 Feb 199812 Dic 2000Silicon Genesis CorporationSilicon-on-silicon wafer bonding process using a thin film blister-separation method
US615982519 Feb 199812 Dic 2000Silicon Genesis CorporationControlled cleavage thin film separation process using a reusable substrate
US616270519 Feb 199819 Dic 2000Silicon Genesis CorporationControlled cleavage process and resulting device using beta annealing
US618711021 May 199913 Feb 2001Silicon Genesis CorporationDevice for patterned films
US622174010 Ago 199924 Abr 2001Silicon Genesis CorporationSubstrate cleaving tool and method
US624516119 Feb 199812 Jun 2001Silicon Genesis CorporationEconomical silicon-on-silicon hybrid wafer assembly
US626394110 Ago 199924 Jul 2001Silicon Genesis CorporationNozzle for cleaving substrates
US628463110 Ene 20004 Sep 2001Silicon Genesis CorporationMethod and device for controlled cleaving process
US629080420 Feb 199818 Sep 2001Silicon Genesis CorporationControlled cleavage process using patterning
US629131318 May 199918 Sep 2001Silicon Genesis CorporationMethod and device for controlled cleaving process
US629132617 Jun 199918 Sep 2001Silicon Genesis CorporationPre-semiconductor process implant and post-process film separation
US629481424 Ago 199925 Sep 2001Silicon Genesis CorporationCleaved silicon thin film with rough surface
US639174028 Abr 199921 May 2002Silicon Genesis CorporationGeneric layer transfer methodology by controlled cleavage process
US64586722 Nov 20001 Oct 2002Silicon Genesis CorporationControlled cleavage process and resulting device using beta annealing
US648604120 Feb 200126 Nov 2002Silicon Genesis CorporationMethod and device for controlled cleaving process
US650073227 Jul 200031 Dic 2002Silicon Genesis CorporationCleaving process to fabricate multilayered substrates using low implantation doses
US65118996 May 199928 Ene 2003Silicon Genesis CorporationControlled cleavage process using pressurized fluid
US651356414 Mar 20014 Feb 2003Silicon Genesis CorporationNozzle for cleaving substrates
US652839121 May 19994 Mar 2003Silicon Genesis, CorporationControlled cleavage process and device for patterned films
US65483824 Ago 200015 Abr 2003Silicon Genesis CorporationGettering technique for wafers made using a controlled cleaving process
US655404627 Nov 200029 Abr 2003Silicon Genesis CorporationSubstrate cleaving tool and method
US655880229 Feb 20006 May 2003Silicon Genesis CorporationSilicon-on-silicon hybrid wafer assembly
US663272413 Ene 200014 Oct 2003Silicon Genesis CorporationControlled cleaving process
US67907479 Oct 200214 Sep 2004Silicon Genesis CorporationMethod and device for controlled cleaving process
US689083826 Mar 200310 May 2005Silicon Genesis CorporationGettering technique for wafers made using a controlled cleaving process
US705680820 Nov 20026 Jun 2006Silicon Genesis CorporationCleaving process to fabricate multilayered substrates using low implantation doses
US716079019 Ago 20039 Ene 2007Silicon Genesis CorporationControlled cleaving process
US73482586 Ago 200425 Mar 2008Silicon Genesis CorporationMethod and device for controlled cleaving process
US737166016 Nov 200513 May 2008Silicon Genesis CorporationControlled cleaving process
US741088726 Ene 200712 Ago 2008Silicon Genesis CorporationControlled process and resulting device
US775921726 Ene 200720 Jul 2010Silicon Genesis CorporationControlled process and resulting device
US777671720 Ago 200717 Ago 2010Silicon Genesis CorporationControlled process and resulting device
US78119007 Sep 200712 Oct 2010Silicon Genesis CorporationMethod and structure for fabricating solar cells using a thick layer transfer process
US784681810 Jul 20087 Dic 2010Silicon Genesis CorporationControlled process and resulting device
US81873774 Oct 200229 May 2012Silicon Genesis CorporationNon-contact etch annealing of strained layers

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