US2917684A - Semi-conductive electrode system - Google Patents

Semi-conductive electrode system Download PDF

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US2917684A
US2917684A US608067A US60806756A US2917684A US 2917684 A US2917684 A US 2917684A US 608067 A US608067 A US 608067A US 60806756 A US60806756 A US 60806756A US 2917684 A US2917684 A US 2917684A
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semi
electrode
conductive
chromium
nickel
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US608067A
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Becherer Hans Karl
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North American Philips Co Inc
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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    • H01L2224/4805—Shape
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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Definitions

  • This invention relates to semi-conductive electrode systems or devices comprising a semi-conductive body, one or more electrodes, and current-supply wires or leads connected to the electrodes.
  • the semiconductive body of which may consist, for example, of germanium or silicon
  • an etching treatment after the electrodes and the current-supply wires have been provided. Since the conventional etching agents chemically attack not only the surface of the semi-conductive body, but also the supply wires, the risk is involved that the elements thus dissolving may contaminate the semi-conductive surface and this results in a material decline in the electrical properties of such a system.
  • the invention is based on the discovery that, although chromium and nickel, separately, are chemically attacked by the conventional etching agents, there are a plurality of alloys of such metals which are not attacked thereby.
  • At least one current-supply wire consists of a chromium-nickel alloy containing at least so large a percentage of each of said elements that chemical attack in the conventional etching agents does not occur.
  • the alloy preferably contains at least 5% of each of said metals.
  • An alloy which may satisfactorily be used contains 20% of chromium and 80% of nickel. (The percentages mentioned are percentages by weight.)
  • the diode comprises a germanium monocrystal 1 of area of 3 x 3 mms.
  • compositions of a few conventional baths for etching semi-conductive electrode systems are:
  • a conductive lead connected to the electrode and of which the portion thereof adjacent the body is constituted of a chromium-nickel alloy containing sufficient chromium and nickel to resist chemical attack during the etching treatment.
  • a conductive lead connected to and contacting the electrode and consisting of a chromium-nickel alloy containing at least 5% of chromium and at least 5% of nickel.
  • a device as set forth in claim 2 wherein the alloy consists of about 20% of chromium and about 80% of nickel.

Description

Dec. 115, 1959 H. K. BECHERER 2,917,684
SEMI-CONDUCTIVE ELECTRODE SYSTEM Filed Sept. 5, 1956 \NVENTOR HANS KARL BECHER ER AGET United States Patent SEMI-CONDUCTIVE ELECTRODE SYSTEM Hans Karl Becherer, Hamburg, Germany, assignor, by
mesne assignments, to North American Philips Company, Inc., New York, N.Y., a corporation of Delaware Application September 5, 1956, Serial No. 608,067
Claims priority, application Netherlands September 29, 1955 3 Claims. (Cl. 317-234) This invention relates to semi-conductive electrode systems or devices comprising a semi-conductive body, one or more electrodes, and current-supply wires or leads connected to the electrodes.
It is known for such an electrode system, the semiconductive body of which may consist, for example, of germanium or silicon, to be subjected to an etching treatment after the electrodes and the current-supply wires have been provided. Since the conventional etching agents chemically attack not only the surface of the semi-conductive body, but also the supply wires, the risk is involved that the elements thus dissolving may contaminate the semi-conductive surface and this results in a material decline in the electrical properties of such a system.
The invention is based on the discovery that, although chromium and nickel, separately, are chemically attacked by the conventional etching agents, there are a plurality of alloys of such metals which are not attacked thereby.
According to the invention, at least one current-supply wire consists of a chromium-nickel alloy containing at least so large a percentage of each of said elements that chemical attack in the conventional etching agents does not occur. The alloy preferably contains at least 5% of each of said metals. An alloy which may satisfactorily be used contains 20% of chromium and 80% of nickel. (The percentages mentioned are percentages by weight.)
In order that the invention may be readily carried into effect, one embodiment will now be described, by way of example, with reference to the accompanying drawing.
The sole figure in the drawing is a diagrammatic sectional view of a crystal diode.
The diode comprises a germanium monocrystal 1 of area of 3 x 3 mms.
2,917,684 Patented Dec. 15, 1959 the n-type having a thickness of 0.5 mm. and a surface The specific resistance is, for example, 15 ohm-cm. With the aid of a small amount of tin 2 containing 10% of antimony, the crystal is soldered to a small plate of gold-coated molybdenum 3 having a coefficient of expansion approximately equal to that of germanium. A so-called alloy electrode 4, consisting of indium, is fused to the upper side of the crystal. A conductive lead or supply wire 5 secured in the electrode 4 consists of an alloy of 20% of chromium and of nickel.
Compositions of a few conventional baths for etching semi-conductive electrode systems are:
A B 1 d H 0 3 dl. HNO 1 dl. HP 3 dl. HF 1 dl. H 0 3 dl. CH COOH 0.1 dl. Br
As a rule, current-supply wires need, of course, to be manufactured from such an alloy only so far as they come into contact with the etching liquid.
What is claimed is:
1. In a semi-conductive device containing a semi-conductive body and a fused electrode thereon and subject to an etching treatment after the electrode has been made and contacted, a conductive lead connected to the electrode and of which the portion thereof adjacent the body is constituted of a chromium-nickel alloy containing sufficient chromium and nickel to resist chemical attack during the etching treatment.
2. In a semi-conductive device containing a semi-conductive body and a fused electrode thereon and subject to an etching treatment after the electrode has been made and contacted, a conductive lead connected to and contacting the electrode and consisting of a chromium-nickel alloy containing at least 5% of chromium and at least 5% of nickel.
3. A device as set forth in claim 2 wherein the alloy consists of about 20% of chromium and about 80% of nickel.
References Cited in the file of this patent UNITED STATES PATENTS 2,541,832 Quinn Feb. 13, 1951 2,542,727 Theuerer Feb. 20, 1951 2,677,079 McCreary Apr. 27, 1954

Claims (1)

1. IN A SEMI-CONDUCTIVE DEVICE CONTAINING A SEMI-CONDUCTIVE BODY AND A FUSED ELECTRODE THEREON AND SUBJECT TO AN ETCHING TREATMENT AFTER THE ELECTRODE HAS BEEN MADE AND CONTACTED, A CONDUCTIVE LEAD CONNECTED TO THE ELECTRODE AND OF WHICH THE PORTION THEREOF ADJACENT THE BODY IS CONSTITUTED OF A CHROMIUM-NICKEL ALLOY CONTAINING SUFFICIENT CHROMIUM AND NICKEL TO RESIST CHEMICAL ATTACK DURING THE ETCHING TREATMENT.
US608067A 1955-09-29 1956-09-05 Semi-conductive electrode system Expired - Lifetime US2917684A (en)

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2982894A (en) * 1960-01-12 1961-05-02 Jr Thomas C Tweedie Coaxial microwave diode and method of making the same
US3025439A (en) * 1960-09-22 1962-03-13 Texas Instruments Inc Mounting for silicon semiconductor device
US3103733A (en) * 1958-08-19 1963-09-17 Clevite Corp Treatment of germanium semiconductor devices
US3140527A (en) * 1958-12-09 1964-07-14 Valdman Henri Manufacture of semiconductor elements
US3147779A (en) * 1960-09-16 1964-09-08 Gen Electric Cutting and forming transistor leads
US3159775A (en) * 1960-11-30 1964-12-01 Sylvania Electric Prod Semiconductor device and method of manufacture
US3168687A (en) * 1959-12-22 1965-02-02 Hughes Aircraft Co Packaged semiconductor assemblies having exposed electrodes
US3188535A (en) * 1959-08-27 1965-06-08 Philips Corp Semi-conductor electrode system having at least one aluminium-containing electrode
US3195217A (en) * 1959-08-14 1965-07-20 Westinghouse Electric Corp Applying layers of materials to semiconductor bodies

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB928110A (en) * 1960-01-06 1963-06-06 Pacific Semiconductors Inc Semiconductor devices and methods for assembling them
DE1123406B (en) * 1960-09-27 1962-02-08 Telefunken Patent Process for the production of alloyed semiconductor devices
DE1289188B (en) * 1964-12-15 1969-02-13 Telefunken Patent Metal base transistor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2541832A (en) * 1949-07-22 1951-02-13 Gen Electric Electric current rectifier
US2542727A (en) * 1949-12-29 1951-02-20 Bell Telephone Labor Inc Etching processes and solutions
US2677079A (en) * 1949-06-11 1954-04-27 Automatic Elect Lab Concentric translating device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2485069A (en) * 1944-07-20 1949-10-18 Bell Telephone Labor Inc Translating material of silicon base
GB635690A (en) * 1946-07-31 1950-04-12 Gen Electric Co Ltd Improvements in and relating to crystal rectifiers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2677079A (en) * 1949-06-11 1954-04-27 Automatic Elect Lab Concentric translating device
US2541832A (en) * 1949-07-22 1951-02-13 Gen Electric Electric current rectifier
US2542727A (en) * 1949-12-29 1951-02-20 Bell Telephone Labor Inc Etching processes and solutions

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3103733A (en) * 1958-08-19 1963-09-17 Clevite Corp Treatment of germanium semiconductor devices
US3140527A (en) * 1958-12-09 1964-07-14 Valdman Henri Manufacture of semiconductor elements
US3195217A (en) * 1959-08-14 1965-07-20 Westinghouse Electric Corp Applying layers of materials to semiconductor bodies
US3188535A (en) * 1959-08-27 1965-06-08 Philips Corp Semi-conductor electrode system having at least one aluminium-containing electrode
US3168687A (en) * 1959-12-22 1965-02-02 Hughes Aircraft Co Packaged semiconductor assemblies having exposed electrodes
US2982894A (en) * 1960-01-12 1961-05-02 Jr Thomas C Tweedie Coaxial microwave diode and method of making the same
US3147779A (en) * 1960-09-16 1964-09-08 Gen Electric Cutting and forming transistor leads
US3025439A (en) * 1960-09-22 1962-03-13 Texas Instruments Inc Mounting for silicon semiconductor device
US3159775A (en) * 1960-11-30 1964-12-01 Sylvania Electric Prod Semiconductor device and method of manufacture

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FR1157675A (en) 1958-06-02
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GB842366A (en) 1960-07-27

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