US2932588A - Methods of manufacturing thin films of refractory dielectric materials - Google Patents

Methods of manufacturing thin films of refractory dielectric materials Download PDF

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US2932588A
US2932588A US593198A US59319856A US2932588A US 2932588 A US2932588 A US 2932588A US 593198 A US593198 A US 593198A US 59319856 A US59319856 A US 59319856A US 2932588 A US2932588 A US 2932588A
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magnetic flux
flux path
path
evaporate
electrons
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Frank Kurt Josef
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Teledyne UK Ltd
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English Electric Valve Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S164/00—Metal founding
    • Y10S164/04—Dental
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing

Definitions

  • This invention relates to methods of manufacturing thin films and more particularly though not exclusively to thin films of refractory dielectric materials.
  • Oneknown method of creating a very thin film of a material is to place said material in, or on, a suitable container or holder and to raise the temperature of the material, in a vacuum, up to or beyond its evaporation temperature.
  • the resultant evaporate is allowed to condense upon a suitable substrate so as to form a thin lilm deposit.
  • This method is highly suited to certain materials, particularly some metals. Where, however, the material, has a very hi'gh evaporating temperature the substance from which the container or holder is made may also evaporate causing, inter alia, contamination of the condensate. Also, some materials, even when at temperature lower than their evaporation temperature, tend ⁇ chemically to react with the substance from which the container or holder is made, and this elect is also undesirable.
  • the present invention is of great advantage when applied to the evaporation of refractory insulators of which 'silicon dioxide, alumina, magnesium oxide, and zirconium oxide are well known examples.
  • a thin film of material is made by bombarding a specimen of the material in vacuo with an intense electron beam to evaporate material from said specimen and condensing the evaporate as a thin lilm on a carrier or substrate positioned in the vacuum.
  • a thin lm of material is manufactured by producing a magnetic tlux path in an evacuated space, said path curving approximately through a right angle over its length, proecting a beam of electrons along said linx path so that the electron trajectory is bent to follow said path and the electrons are focussed on a specimen of material at the end of said path to cause evaporation of said material by electronic bombardment, and condensing the evaporate to form a thin film on ⁇ a carrier or substrate surface which is positioned clear of the magnetic linx and electron beam path.
  • This preferred method has the great advantage that the electron gun producing the evaporating beam is practically entirely imune from having evaporate condensed thereon.
  • means are provided for regulating the velocity of the bombarding electrons to be substantially equivalent to that corresponding to the second cross-over potential on the secondsubstantially clear of the magnetic lines of liux between said poles for condensing the evaporate.
  • Fig. 1 shows a vertical cross-section of one form of apparatus for carrying out the invention
  • Fig. 2 is a horizontal cross section of a detail of Fig. l. Similar references are used for similar parts throughout the figures.
  • a permanent magnet 1 arranged substantially in the shape of a horseshoe and designed so that the magnetic liux across its inter-pole space is of the order of 1,600 gauss or more, has one of its polepieces 2 adapted to receive or support a portion of rel fractory insulator material 3 to be evaporated.
  • the other pole-piece 4 of said magnet comprises a hollow section 5, closed at one end, so that the inter-pole air gap extends from the external face of said closed end to the face of pole-piece 2.
  • Dotted lines la indicate the general pattern of llux lines in the inter-pole air gap.
  • An electron gun 6, of any well known kind, is centrally situated within section 5 and comprises a cathode 7 surrounded by a control cylinder or grid 8.
  • a small tapered orifice 9, in the closed end of cylindrical section 5, allows electrons emitted by the electron gun to emerge, from the pole-piece.
  • Fig. 2 shows a horizontal cross-section of Fig. 1. taken along a line passing through the center of electron gun 6 substantially on line 6-6 of Fig. l.
  • bell-jar 10, platen 15, screen 16 and platform 11 are not included in this figure.
  • Magnet l and therefore hollow section 5, is maintained through lead 5a at earth potential and where the material 3 is an insulator (the case presumed here) a negative potential of approximately 3 kilovolts applied via terminals 7b and 8a to cathode 7 and control grid 8 respectively.
  • a small voltage appropriate to the type of cathode used, is applied across terminals 7a and 7b to heat cathode 7.
  • the actual value of said applied negative potential is preferably such that the velocity of electrons bombarding the material 3 will have an electron velocity substantially corresponding to the so-called second crossover potential on the secondary emission characteristic for the material to be evaporated. Selection of this velocity has the advantage of enabling a smaller anode potential to be used in the gun than would otherwise be the case.
  • the high current densities necessary to cause evaporation (of the order of 25 amps. per square centimeter) may be obtained.
  • the material 3 On bombardment by electrons the material 3 will ex-A perience a rapid increase of temperature at the point of electron impingement and evaporation will occur from said point, the evaporate rising through the vacuum in the direction of arrow 13 to condense as a thin ilm on a maior surface 14 (the substrate) of a platen 15, suspended above the material 3.
  • a shield 16, of non-magnetic material, is provided as a further safeguard to prevent any of the evaporate from condensing upon the face of polepiece 4. Such condensation would form on the wall of orifice 9 a coating which would allow a high electrostatic charge to be set-up on said face, and interfere with the electron beam.
  • Iclarm' 1 Apparatus for making thin tlms of material comprising within an evacuable chamber, a magnet of which one pole piece has its end face adapted to support the material to be evaporated and other pole piece surrounds an electron gun situated so as to re electrons through an accident in the face of said other pole piece, said face extending substantially at right angles to the end face of said rst mentioned one poley piece, and means situated
  • the hereinbefore described technique is suitl able for short evaporation periods, over longer periods the electron beam will gradually drill a hole through the insulator material. It is therefore preferred, in such cases, to arrange for the material 3 to be slowly moved in a plane at right angles to the electron path, so as to continuously bring fresh areas of the material under electronic bombardment.
  • the following procedure may be employed.
  • a sample of the material is supported on a carriage which can be moved in a plane at right angles to the electron path at the point of impingement, the movement being such that the sample is scanned under the electron.beam, at constant speed.
  • This speed and the power density of the beam is so adjusted that the part of the material penetrated by the beam is raised, within the time of bombardment, to a temperature suliicient to evaporate all components, while the temperature of the remainder is not allowed to reach the evaporation point of the most volatile component. In this fashion layer after layer of the material is removed by evaporation.
  • Free supporting glass lms can be made by the method of the present invention using as a substrate an orsubstantially clear of the magnetic lines of ux between said poles for condensing the evaporate.
  • a method of making a thin tilm of material on a substrate consisting in producing a magnetic tlux path curving through approximately a right angle along its length in an evacuated space, projecting a beam of elec trons along said magnetic ux path so that the electron trajectory is bent to follow said magnetic ux path, supporting a specimen of material at the end of said mag. netic flux path, focussing said beam of electrons upon said specimen while simultaneously exposed to said magnetic ux path for effecting evaporation of said material by electronic bombardment and condensing the evaporate in a position external to both the magnetic tlux path and the electron trajectory to form a thin lm on said substrate.

Description

Apnl 12, 1960 K. J. FRANK 2,932,588
METHODS 0F MANUFACTURING THIN FILus A0F REFRACTORY DIELECTRIC uATx-:RIALS Filed June 22. 1956 T9-121 sa www@ xi; awsagaa l l:
United States Patent O ice METHODS F MANUFACI'URIN OF REFRACIORY DIELECIRIC MATERIAIS Kurt Josef Frank, Darmstadt, Germany, assignor to Englhh Electric Valve Company Limited, London, Eng- Ind, a British company Application Jaaa zz, 195s, sanar No. 593,198
emma priority, appuaaaop Graaf man my s, 195s z claim. (ci. 111-106) This invention relates to methods of manufacturing thin films and more particularly though not exclusively to thin films of refractory dielectric materials.
Oneknown method of creating a very thin film of a material is to place said material in, or on, a suitable container or holder and to raise the temperature of the material, in a vacuum, up to or beyond its evaporation temperature. The resultant evaporate is allowed to condense upon a suitable substrate so as to form a thin lilm deposit. This method is highly suited to certain materials, particularly some metals. Where, however, the material, has a very hi'gh evaporating temperature the substance from which the container or holder is made may also evaporate causing, inter alia, contamination of the condensate. Also, some materials, even when at temperature lower than their evaporation temperature, tend `chemically to react with the substance from which the container or holder is made, and this elect is also undesirable.
'I'he present invention seeks to provide means whereby materials, which upon being raised ,Ito their evaporation temperature as above described, would give rise to the aforementioned undesirable effects, may be satisfactorily evaporated substantially without said undesirable effects.
Although not limited exclusively thereto, the present invention is of great advantage when applied to the evaporation of refractory insulators of which 'silicon dioxide, alumina, magnesium oxide, and zirconium oxide are well known examples.
According to this invention in its broadest aspect a thin film of material is made by bombarding a specimen of the material in vacuo with an intense electron beam to evaporate material from said specimen and condensing the evaporate as a thin lilm on a carrier or substrate positioned in the vacuum.
Itis, of course, known to make holes in bodies by elec ironically bombarding said bodies to evaporate the material thereof where the holes are required.
In a preferred way of carrying outthe invention a thin lm of material is manufactured by producing a magnetic tlux path in an evacuated space, said path curving approximately through a right angle over its length, proecting a beam of electrons along said linx path so that the electron trajectory is bent to follow said path and the electrons are focussed on a specimen of material at the end of said path to cause evaporation of said material by electronic bombardment, and condensing the evaporate to form a thin film on `a carrier or substrate surface which is positioned clear of the magnetic linx and electron beam path. This preferred method has the great advantage that the electron gun producing the evaporating beam is practically entirely imune from having evaporate condensed thereon.
Preferably, where the material is an insulator, means are provided for regulating the velocity of the bombarding electrons to be substantially equivalent to that corresponding to the second cross-over potential on the secondsubstantially clear of the magnetic lines of liux between said poles for condensing the evaporate.
The invention is described with reference to the aocompanying drawings of which Fig. 1 shows a vertical cross-section of one form of apparatus for carrying out the invention and Fig. 2 is a horizontal cross section of a detail of Fig. l. Similar references are used for similar parts throughout the figures.
Referring to Fig. 1, a permanent magnet 1 arranged substantially in the shape of a horseshoe and designed so that the magnetic liux across its inter-pole space is of the order of 1,600 gauss or more, has one of its polepieces 2 adapted to receive or support a portion of rel fractory insulator material 3 to be evaporated. The other pole-piece 4 of said magnet comprises a hollow section 5, closed at one end, so that the inter-pole air gap extends from the external face of said closed end to the face of pole-piece 2. Dotted lines la indicate the general pattern of llux lines in the inter-pole air gap. An electron gun 6, of any well known kind, is centrally situated within section 5 and comprises a cathode 7 surrounded by a control cylinder or grid 8. A small tapered orifice 9, in the closed end of cylindrical section 5, allows electrons emitted by the electron gun to emerge, from the pole-piece.
'Ihe whole device, as described, is contained within an evaeuable transparent container shown as a belliar 10 on a platform 11. Suitable pumping arrangements, not shown, are connected to pipe 12, in platform 11, whereby to control the pressure within the bell-jar. Fig. 2 shows a horizontal cross-section of Fig. 1. taken along a line passing through the center of electron gun 6 substantially on line 6-6 of Fig. l. For clarity, bell-jar 10, platen 15, screen 16 and platform 11 are not included in this figure.
Magnet l, and therefore hollow section 5, is maintained through lead 5a at earth potential and where the material 3 is an insulator (the case presumed here) a negative potential of approximately 3 kilovolts applied via terminals 7b and 8a to cathode 7 and control grid 8 respectively. A small voltage, appropriate to the type of cathode used, is applied across terminals 7a and 7b to heat cathode 7. The actual value of said applied negative potential is preferably such that the velocity of electrons bombarding the material 3 will have an electron velocity substantially corresponding to the so-called second crossover potential on the secondary emission characteristic for the material to be evaporated. Selection of this velocity has the advantage of enabling a smaller anode potential to be used in the gun than would otherwise be the case. If the material 3 were a metal there would be, in general, no point in restricting the bombarding velocity the upper limit of bombardment velocity being set by practical considerations, principally the necessity of providing adequate insulation in the gun and the diliiculty of providing suliicient magnetic ux to maintain a high velocity beam properly focussed on the material. Line 6a shows the trajectory of electrons leaving the gun. After passing through orifice 9 the electrons will follow substantially the path of magnetic llux lines 1a and impinge upon the material 3 to be evaporated. The point of impingernent is made as small as possible in order that Patented Apr. 13, 1960 l uw .Y
the high current densities necessary to cause evaporation (of the order of 25 amps. per square centimeter) may be obtained.
On bombardment by electrons the material 3 will ex-A perience a rapid increase of temperature at the point of electron impingement and evaporation will occur from said point, the evaporate rising through the vacuum in the direction of arrow 13 to condense as a thin ilm on a maior surface 14 (the substrate) of a platen 15, suspended above the material 3. A shield 16, of non-magnetic material, is provided as a further safeguard to prevent any of the evaporate from condensing upon the face of polepiece 4. Such condensation would form on the wall of orifice 9 a coating which would allow a high electrostatic charge to be set-up on said face, and interfere with the electron beam.
After a suicient layer of refractory insulator material has been deposited upon substrate 14, the voltages applied to gun 6 are switched oti and platen 15 removed. The insulator material on the substrate will be in the form of a thin lm and experiment has shown that it is practically uncontaminated and required no further chemical treatment.
' 4 ganlcdlmegcollodiommountedonaringohmsterial whose expansion coefficient is matched to that of the glass. After the evaporation procesa the lilm is heated in air to a temperature at which the viscosity of the glass is such that the film will tighten by surface tension and the organic film will burn away, leaving the free supporting glass lm. A detailed description of the process is not given here as a full description is to be found in applicant's British patent specification No. 709,503.
Iclarm' 1. Apparatus for making thin tlms of material comprising within an evacuable chamber, a magnet of which one pole piece has its end face adapted to support the material to be evaporated and other pole piece surrounds an electron gun situated so as to re electrons through an orice in the face of said other pole piece, said face extending substantially at right angles to the end face of said rst mentioned one poley piece, and means situated Although the hereinbefore described technique is suitl able for short evaporation periods, over longer periods the electron beam will gradually drill a hole through the insulator material. It is therefore preferred, in auch cases, to arrange for the material 3 to be slowly moved in a plane at right angles to the electron path, so as to continuously bring fresh areas of the material under electronic bombardment.
For evporating glass, or other materials containing several components having dilerent evaporation temperatunes, in such a manner that the film condensed on the substrate will contain all these components intimately mixed with each other in the same proportion as in the original material, the following procedure may be employed. A sample of the material is supported on a carriage which can be moved in a plane at right angles to the electron path at the point of impingement, the movement being such that the sample is scanned under the electron.beam, at constant speed. This speed and the power density of the beam is so adjusted that the part of the material penetrated by the beam is raised, within the time of bombardment, to a temperature suliicient to evaporate all components, while the temperature of the remainder is not allowed to reach the evaporation point of the most volatile component. In this fashion layer after layer of the material is removed by evaporation.
Free supporting glass lms can be made by the method of the present invention using as a substrate an orsubstantially clear of the magnetic lines of ux between said poles for condensing the evaporate.
2. A method of making a thin tilm of material on a substrate consisting in producing a magnetic tlux path curving through approximately a right angle along its length in an evacuated space, projecting a beam of elec trons along said magnetic ux path so that the electron trajectory is bent to follow said magnetic ux path, supporting a specimen of material at the end of said mag. netic flux path, focussing said beam of electrons upon said specimen while simultaneously exposed to said magnetic ux path for effecting evaporation of said material by electronic bombardment and condensing the evaporate in a position external to both the magnetic tlux path and the electron trajectory to form a thin lm on said substrate.
References Cited in the tile of this patent UNITED STATES PATENTS 2,103,623 Kott Dec. 28, 1937 2,157,478 Burkhardt et al. May 9, 1939 2,239,642 Burkhardt et al Apr. 22, 1941 2,527,747 Lewis et al Oct. 31, 1950 2,754,259 Robinson et al. July l0, 1956 2,771,568 Steigerwald Nov. 20, 1956 FOREIGN PATENTS 754,102 Great Britain Aug. l, 1956 OTHER REFERENCES

Claims (1)

  1. 2. A METHOD OF MAKING A THIN FILM OF MATERIAL ON A SUBSTRATE CONSISTING IN PRODUCING A MAGNETIC FLUX PATH CURVING THROUGH APPROXIMATELY A RIGHT ANGLE ALONG ITS LENGTH IN AN EVACUATED SPACE, PROJECTING A BEAM OF ELECTRONS ALONG SAID MAGNETIC FLUX PATH SO THAT THE ELECTRON TRAJECTORY IS BENT TO FOLLOW SAID MAGNETIC FLUX PATH, SUPPORTING A SPECIMEN OF MATERIAL AT THE END OF SAID MAGNETIC FLUX PATH, FOCUSSING SAID BEAM OF ELECTRONS UPON SAID SPECIMEN WHILE SIMULTANEOUSLY EXPOSED TO SAID MAGNETIC FLUX PATH FOR EFFECTING EVAPORATION OF SAID MATERIAL BY ELECTRONIC BOMBARDMENT AND CONDENSING THE EVAPORATE IN A POSITION EXTERNAL TO BOTH THE MAGNETIC FLUX PATH AND
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Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3046936A (en) * 1958-06-04 1962-07-31 Nat Res Corp Improvement in vacuum coating apparatus comprising an ion trap for the electron gun thereof
US3101515A (en) * 1960-06-03 1963-08-27 Stauffer Chemical Co Electron beam furnace with magnetically guided axial and transverse beams
US3104178A (en) * 1960-12-23 1963-09-17 Ibm Evaporative coating method
US3170019A (en) * 1962-01-15 1965-02-16 Stauffer Chemical Co Electron beam furnace
US3177535A (en) * 1960-06-21 1965-04-13 Stauffer Chemical Co Electron beam furnace with low beam source
US3184329A (en) * 1960-12-16 1965-05-18 Rca Corp Insulation
US3202794A (en) * 1963-02-18 1965-08-24 Thermionics Lab Inc Permanent magnet transverse electron beam evaporation source
US3227133A (en) * 1962-04-13 1966-01-04 Temescal Metallurgical Corp Multiple layer coating and cleaning
US3230110A (en) * 1962-01-22 1966-01-18 Temescal Metallurgical Corp Method of forming carbon vapor barrier
US3265801A (en) * 1960-08-22 1966-08-09 Ass Elect Ind Electron beam furnaces
US3268648A (en) * 1962-09-25 1966-08-23 Heraeus Gmbh W C Apparatus for vaporizing materials by an electron beam
US3271179A (en) * 1962-09-24 1966-09-06 Temescal Metallurgical Corp Method for the manufacture of an optical filter
US3303320A (en) * 1962-09-25 1967-02-07 Heraeus Gmbh W C Vapor-coating apparatus
US3322930A (en) * 1961-05-12 1967-05-30 Welding Research Inc Protective shield for electron gun
US3322565A (en) * 1962-08-14 1967-05-30 Temescal Metallurgical Corp Polymer coatings through electron beam evaporation
US3329524A (en) * 1963-06-12 1967-07-04 Temescal Metallurgical Corp Centrifugal-type vapor source
US3343828A (en) * 1962-03-30 1967-09-26 Air Reduction High vacuum furnace
US3351731A (en) * 1962-10-23 1967-11-07 Jeol Ltd Method and apparatus for treating material with a charged beam
US3467057A (en) * 1966-07-27 1969-09-16 Hitachi Ltd Electron beam evaporator
US3472999A (en) * 1967-02-12 1969-10-14 Nippon Electric Co Electron beam generating device
US3492152A (en) * 1967-01-30 1970-01-27 Gen Dynamics Corp Method of vacuum vapor depositing a material on a substrate including reconstitution of decomposed portions of the material
US3617375A (en) * 1969-08-11 1971-11-02 Texas Instruments Inc Electron beam evaporated quartz insulating material process
US3693583A (en) * 1968-06-28 1972-09-26 Euratom Vapor deposition apparatus
US3854984A (en) * 1971-12-17 1974-12-17 Gen Electric Vacuum deposition of multi-element coatings and films with a single source
US3921572A (en) * 1974-02-25 1975-11-25 Ibm Vacuum coating apparatus
US4698235A (en) * 1982-09-29 1987-10-06 National Research Development Corporation Siting a film onto a substrate including electron-beam evaporation
US5084090A (en) * 1990-07-19 1992-01-28 Axel Johnson Metals, Inc. Vacuum processing of reactive metal
US5084265A (en) * 1987-08-24 1992-01-28 Sumitomo Electric Industries, Ltd. Process for preparing a thin film of superconducting compound oxide
WO1993024663A1 (en) * 1992-05-26 1993-12-09 Paton Tek, Inc. Apparatus and method for producing carbide coatings
US5436035A (en) * 1991-12-05 1995-07-25 Alusuisse-Lonza Services Ltd. Coating a substrate surface with a permeation barrier
US5458754A (en) * 1991-04-22 1995-10-17 Multi-Arc Scientific Coatings Plasma enhancement apparatus and method for physical vapor deposition
US5628881A (en) * 1959-04-08 1997-05-13 Lemelson; Jerome H. High temperature reaction method

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US2103623A (en) * 1933-09-20 1937-12-28 Ion Corp Electron discharge device for electronically bombarding materials
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US2239642A (en) * 1936-05-27 1941-04-22 Bernhard Berghaus Coating of articles by means of cathode disintegration
US2527747A (en) * 1946-01-03 1950-10-31 Margaret N Lewis Apparatus for coating articles by thermal evaporation
US2754259A (en) * 1952-11-29 1956-07-10 Sprague Electric Co Process and apparatus for growing single crystals
GB754102A (en) * 1951-06-22 1956-08-01 Edwards & Co London Ltd W Improvements in or relating to a method and apparatus for vapourising materials, forexample, metal in vacuum
US2771568A (en) * 1951-01-31 1956-11-20 Zeiss Carl Utilizing electron energy for physically and chemically changing members

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US2103623A (en) * 1933-09-20 1937-12-28 Ion Corp Electron discharge device for electronically bombarding materials
US2239642A (en) * 1936-05-27 1941-04-22 Bernhard Berghaus Coating of articles by means of cathode disintegration
US2157478A (en) * 1936-06-17 1939-05-09 Bernhard Berghaus Method of coating articles by vaporized coating materials
US2527747A (en) * 1946-01-03 1950-10-31 Margaret N Lewis Apparatus for coating articles by thermal evaporation
US2771568A (en) * 1951-01-31 1956-11-20 Zeiss Carl Utilizing electron energy for physically and chemically changing members
GB754102A (en) * 1951-06-22 1956-08-01 Edwards & Co London Ltd W Improvements in or relating to a method and apparatus for vapourising materials, forexample, metal in vacuum
US2754259A (en) * 1952-11-29 1956-07-10 Sprague Electric Co Process and apparatus for growing single crystals

Cited By (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3046936A (en) * 1958-06-04 1962-07-31 Nat Res Corp Improvement in vacuum coating apparatus comprising an ion trap for the electron gun thereof
US5628881A (en) * 1959-04-08 1997-05-13 Lemelson; Jerome H. High temperature reaction method
US3101515A (en) * 1960-06-03 1963-08-27 Stauffer Chemical Co Electron beam furnace with magnetically guided axial and transverse beams
US3177535A (en) * 1960-06-21 1965-04-13 Stauffer Chemical Co Electron beam furnace with low beam source
US3265801A (en) * 1960-08-22 1966-08-09 Ass Elect Ind Electron beam furnaces
US3184329A (en) * 1960-12-16 1965-05-18 Rca Corp Insulation
US3104178A (en) * 1960-12-23 1963-09-17 Ibm Evaporative coating method
US3322930A (en) * 1961-05-12 1967-05-30 Welding Research Inc Protective shield for electron gun
US3170019A (en) * 1962-01-15 1965-02-16 Stauffer Chemical Co Electron beam furnace
US3230110A (en) * 1962-01-22 1966-01-18 Temescal Metallurgical Corp Method of forming carbon vapor barrier
US3343828A (en) * 1962-03-30 1967-09-26 Air Reduction High vacuum furnace
US3227133A (en) * 1962-04-13 1966-01-04 Temescal Metallurgical Corp Multiple layer coating and cleaning
US3322565A (en) * 1962-08-14 1967-05-30 Temescal Metallurgical Corp Polymer coatings through electron beam evaporation
US3271179A (en) * 1962-09-24 1966-09-06 Temescal Metallurgical Corp Method for the manufacture of an optical filter
US3303320A (en) * 1962-09-25 1967-02-07 Heraeus Gmbh W C Vapor-coating apparatus
US3268648A (en) * 1962-09-25 1966-08-23 Heraeus Gmbh W C Apparatus for vaporizing materials by an electron beam
US3351731A (en) * 1962-10-23 1967-11-07 Jeol Ltd Method and apparatus for treating material with a charged beam
US3202794A (en) * 1963-02-18 1965-08-24 Thermionics Lab Inc Permanent magnet transverse electron beam evaporation source
US3329524A (en) * 1963-06-12 1967-07-04 Temescal Metallurgical Corp Centrifugal-type vapor source
US3467057A (en) * 1966-07-27 1969-09-16 Hitachi Ltd Electron beam evaporator
US3492152A (en) * 1967-01-30 1970-01-27 Gen Dynamics Corp Method of vacuum vapor depositing a material on a substrate including reconstitution of decomposed portions of the material
US3472999A (en) * 1967-02-12 1969-10-14 Nippon Electric Co Electron beam generating device
US3693583A (en) * 1968-06-28 1972-09-26 Euratom Vapor deposition apparatus
US3617375A (en) * 1969-08-11 1971-11-02 Texas Instruments Inc Electron beam evaporated quartz insulating material process
US3854984A (en) * 1971-12-17 1974-12-17 Gen Electric Vacuum deposition of multi-element coatings and films with a single source
US3921572A (en) * 1974-02-25 1975-11-25 Ibm Vacuum coating apparatus
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