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Patente citante Fecha de presentación Fecha de emisión Cesionario original Título
US634812611 Ago 200019 Feb 2002Applied Materials, Inc.Externally excited torroidal plasma source
US641044911 Ago 200025 Jun 2002Applied Materials, Inc.Method of processing a workpiece using an externally excited torroidal plasma source
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US667998111 May 200020 Ene 2004Applied Materials, Inc.Inductive plasma loop enhancing magnetron sputtering
US671202012 Jun 200230 Mar 2004Applied Materials Inc.Toroidal plasma source for plasma processing
US689390724 Feb 200417 May 2005Applied Materials, Inc.Fabrication of silicon-on-insulator structure using plasma immersion ion implantation
US69394345 Jun 20026 Sep 2005Applied Materials, Inc.Externally excited torroidal plasma source with magnetic control of ion distribution
US703781322 Ago 20032 May 2006Applied Materials, Inc.Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
US709431611 Ago 200022 Ago 2006Applied Materials, Inc.Externally excited torroidal plasma source
US709467028 Ene 200522 Ago 2006Applied Materials, Inc.Plasma immersion ion implantation process
US710909817 May 200519 Sep 2006Applied Materials, Inc.Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US713735422 Ago 200321 Nov 2006Applied Materials, Inc.Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage
US71665241 Dic 200423 Ene 2007Applied Materials, Inc.Method for ion implanting insulator material to reduce dielectric constant
US718317716 Nov 200427 Feb 2007Applied Materials, Inc.Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
US72236763 May 200429 May 2007Applied Materials, Inc.Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
US724447422 Jun 200417 Jul 2007Applied Materials, Inc.Chemical vapor deposition plasma process using an ion shower grid
US728849128 Ene 200530 Oct 2007Applied Materials, Inc.Plasma immersion ion implantation process
US729136022 Jun 20046 Nov 2007Applied Materials, Inc.Chemical vapor deposition plasma process using plural ion shower grids
US729154521 Nov 20056 Nov 2007Applied Materials, Inc.Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltage
US72945631 Dic 200413 Nov 2007Applied Materials, Inc.Semiconductor on insulator vertical transistor fabrication and doping process
US730398222 Ago 20034 Dic 2007Applied Materials, Inc.Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage
US73121488 Ago 200525 Dic 2007Applied Materials, Inc.Copper barrier reflow process employing high speed optical annealing
US731216217 May 200525 Dic 2007Applied Materials, Inc.Low temperature plasma deposition process for carbon layer deposition
US732073422 Ago 200322 Ene 2008Applied Materials, Inc.Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage
US73234018 Ago 200529 Ene 2008Applied Materials, Inc.Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
US73356118 Ago 200526 Feb 2008Applied Materials, Inc.Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
US73581928 Abr 200415 Abr 2008Applied Materials, Inc.Method and apparatus for in-situ film stack processing
US739376519 Abr 20071 Jul 2008Applied Materials, Inc.Low temperature CVD process with selected stress of the CVD layer on CMOS devices
US742277517 May 20059 Sep 2008Applied Materials, Inc.Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US742891526 Abr 200530 Sep 2008Applied Materials, Inc.O-ringless tandem throttle valve for a plasma reactor chamber
US74295328 Ago 200530 Sep 2008Applied Materials, Inc.Semiconductor substrate process using an optically writable carbon-containing mask
US743098430 Oct 20027 Oct 2008Applied Materials, Inc.Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements
US746547828 Ene 200516 Dic 2008Applied Materials, Inc.Plasma immersion ion implantation process
US747945626 Ago 200420 Ene 2009Applied Materials, Inc.Gasless high voltage high contact force wafer contact-cooling electrostatic chuck
US766646423 Oct 200423 Feb 2010Applied Materials, Inc.RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor
US769559022 Jun 200413 Abr 2010Applied Materials, Inc.Chemical vapor deposition plasma reactor having plural ion shower grids
US770046522 Ago 200320 Abr 2010Applied Materials, Inc.Plasma immersion ion implantation process using a plasma source having low dissociation and low minimum plasma voltage
US776756120 Jul 20043 Ago 2010Applied Materials, Inc.Plasma immersion ion implantation reactor having an ion shower grid
US805815620 Jul 200415 Nov 2011Applied Materials, Inc.Plasma immersion ion implantation reactor having multiple ion shower grids

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