US3419767A - Controllable electrical resistance - Google Patents

Controllable electrical resistance Download PDF

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US3419767A
US3419767A US600105A US60010566A US3419767A US 3419767 A US3419767 A US 3419767A US 600105 A US600105 A US 600105A US 60010566 A US60010566 A US 60010566A US 3419767 A US3419767 A US 3419767A
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layer
resistance
voltage
semiconductor
contacts
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US600105A
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Dahlberg Reinhard
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Telefunken Electronic GmbH
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Telefunken Patentverwertungs GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/38—Cooling arrangements using the Peltier effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Bipolar Transistors (AREA)
  • Non-Reversible Transmitting Devices (AREA)
  • Thermistors And Varistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)

Description

1968 R. DAHLBERG 3,419,767
CONTROLLABLE ELECTRICAL RES ISTANCE Filed Dec. 8, 1966 Sheet of 2 Fig. 3
INVENTOR Reinhard Dclhlberg HEY 5M0;
ATTORNEYS Dec. 31, 1968 R. DAHLBERG CONTROLLABLE ELECTRICAL RESISTANCE Sheet Filed Dec. 8, 1966 Fig. 4
nvvzuron Reinhard Dahlberg ATTORNEYS 3,419,767 CONTROLLABLE ELECTRICAL RESISTANCE Reinhard Dahlberg, Heilbronn-Bockingen, Germany,
assignor to Telefunken Patentverwertungsgesellschaft m.b.H., Ulm (Danube), Germany Filed Dec. 8, 1966, Ser. No. 600,105 Claims priority, application Germany, Dec. 8, 1965, T 29,965 Claims. (Cl. 317-235) ABSTRACT OF THE DISCLOSURE A controllable electrical resistance in the form of a first layer made of semiconductor or insulating material, there being an electrically conductive layer on the resistance layer and two thermoelectric contacts on the electrically conductive layer and forming therewith a Peltier element. A voltage is applied to the contacts which causes those electrons that are not in thermal equilibrium with their surroundings to pass out of the one of the contacts through the electrically conductive layer and into the resistance layer, thereby to modulate the resistance thereof.
Background of the invention As is well known, electrons can pass through a highohmic semiconductor or insulating layer which is located between two conductive electrodes if the semiconductor or insulating layer is sufficiently thin. A high-ohmic semiconductor or insulating layer represents a potential peak for the electrons, the magnitude of which peak is determined by the electron affinity of the electrons in the semiconductor or insulating layer. If the high-ohmic semiconductor or insulating layer is less than 100 A. thick, there nevertheless exists the finite possibility for the electrons to overcome this potential peak if their thermal energy is less than the electron afiinity or work function. Inasmuch as the probability that the electrons overcome the potential peak is an exponential function of the thickness of the semiconductor or insulating layer, the specific resistance of thin semiconductor or insulating layers varies very much with the thickness of the layer. If a voltage is applied across a very thin semiconductor or insulating layer, i.e., a layer having a thickness of about 100 A., the current flowing through the layer is formed, primarily, by electrons whose energy is less than their affinity in the semiconductor or insulating layer. However, this tunnel current decreases very rapidly with increasing thickness of the semiconductor or insulating layer and the current that then still flows is produced only by electrons whose thermal energy is greater than the electron afiinity, that is to say, by so-called hot electrons.
It is, therefore, the object of the present invention to provide an electrical element which operates with hot electrons and which can, for example, be used as an active element.
Summary of the invention With the above object in view, the present invention resides in an electric element in the form of a controllable resistance, wherein a thin layer made of a semiconductor or insulating material carries an electrically conductive nited States Patent 0 3,419,767 Patented Dec. 31, 1968 "ice layer, which itself carries two thermoelectric contacts so that these contacts together with the electrically conductive layer form a Peltier element, there being applied to the two contacts such a voltage that those electrons which are not in thermal equilibrium with their surroundings pass out of one of the contacts through the electrically conductive layer and into the thin semiconductor or insulating layer and modulate the value of its resistance.
The invention thus resides, basically, in that an electrical resistance is modulated by hot electrons which are not in thermal equilibrium with their surroundings and which are injected from a thermoelectric contact into the resistance. The controllable electrical resistance according to the present invention thus has a technological advantage over conventional semiconductor arrangements or semiconductor amplifiers in that the element according to the present invention operates only with electrons, that is to say, it is an element working with majority charge carriers rather than minority charges carriers. Since the transient or recovery time in the electron gas is only between 10 to 10 seconds, the arrangement according to the present invention has a very high frequency limit.
The voltages applied to the two legs of the Peltier element are preferably smaller than twice the Peltier voltage of the thermoelement. Besides this voltage, there is applied to the resistance, between the electrically conductive layervia a thermoelectric contactand the collector electrode which is arranged on the opposite side of the resistance, a voltage which is no greater than the breakdown voltage of the resistance.
The electric resistance which is modulated by the hot electrons consists, preferably, of a semiconductor or insulating layer which is less than 10 A. thick, the layer preferably being more than 10 A. thick. If the resistance material is a semiconductor, the energy gap of the semiconductor material should preferably be greater than 0.7 electron volt. If the resistance layer is :an insulating layer, the insulating material may be an oxide, a nitride, a halide, an organic insulator or a vacuum gap. The thermoelectric N-legs and P-legs of the thermoelement may, for example, consist of n-conductive and p-conductive semiconductor materials. The thermoelement may also be con stituted by metallic couples.
The controllable electric resistance according to the present invention is suited, for example, for use in integrated circuits or in microcircuits and for amplifying very high frequencies. Since the thermal strength increases very markedly with decreasing temperatures, the element according to the present invention can be used to advantage at the temperatures of liquid nitrogen, hydrogen or helium.
Brief description of the drawings FIGURE 1 is a sectional view of one embodiment of a resistance according to the present invention.
FIGURE 2 is a sectional view of another embodiment of a resistance according to the present invention.
FIGURE 3 is a plan view of still another embodiment of a resistance according to the present invention.
FIGURE 4 is a plan view of yet another embodiment of a resistance according to the present invention, showing a particular contact configuration.
Description of the preferred embodiments FIGURE 1 shows a controllable electric resistance according to the present invention, the same comprising an electrical resistance 1 made of a semiconductor material or insulating material, a thin layer serving as the thermoelectrical P-leg 2 and two thermoelectric contacts 3 and 4, serving as the N-legs. The resistance 1 is in the form of a layer on a collector electrode 5.
The electrical resistance may be made, for example, of SiO, A1 BeO, SiC, Si, GaAs and so on. The resistance may also consist of organic layers or of a vacuum gap. The P-leg 2 of the thermoelement of FIGURE 1 consists of a layer of p-conductive thermoelectric material, as, for example, p-Si, p-InSb, and so on. The two N- contacts 3 and 4 consist of a second thermoelectric mate rial, as, for example, Bi, p' -Si, p -Ge, and so on.
If there is applied across the N-contact 3 and the N- contact 4, by means of a voltage source 6, a voltage which is smaller than twice the Peltier voltage between the N-contact 4 and the P-leg 2, hot electrons will flow, depending on the polarity of the voltage, out of the N- contact 3 or out of the N-contact 4, into the P-leg 2, from whence they are emitted into the resistance layer 1. These hot electrons pass through the resistance layer 1, which is between about 10 and 10 A. thick, to the opposite collector electrode 5, if, by means of a voltage source 7, a voltage is applied, via the N-contact 3 across the P-leg 2 and the collector electrode 5 and hence across the resistance layer, which voltage is no greater than the breakdown voltage of the resistance layer 1. Those electrons which come from the thermocontact and pass through the resistance layer to the collector electrode contribute to the current which flows between the P-leg and the collector electrode through the resistance layer. If the product of the voltage across the resistance layer 1 times the current through this layer which is due to the hot electrons is greater than the product of the voltage across the N-contact 3 and the N-contact 4 times the total current produced by this voltage, the circuit arrangement of FIGURE 1 represents an active four-terminal circuit.
In the arrangement shown in FIGURE 2, the collector electrode does not, as in the case of FIGURE 1, consist of a metallic layer but of a p-semiconductor 15 which carries an insulating layer 18, preferably an oxide layer. An opening is etched out of the middle of this insulating layer-in a manner known in the manufacture of planar semiconductors-a resistance layer 11 and an n-conductive semiconductor layer 12 being deposited into this opening, the same serving as the resistance and as the N-leg of the thermoelement. The two P- contacts 13 and 14 are metal layers and consist of a metal such as aluminum, chromium-gold, and so on. The metal layers 13 and 14 are not in direct contact with the N-leg 12 which is made of n-conductive semiconductor material, but are separated from the n-conductive material by metal layers 19 and 20 which produce a n -contact and which see to it that the junctions between the P- and N-legs are nonrectifying junctions. The two P-contacts extend laterally on the insulating layer 18.
FIGURE 3 shows a multiple arrangement consisting, for example, of thirty-five of the individual Peltier elements shown in FIGURE 2. All of the individual elements are arranged on a common collector electrode 25, which carries the thirty-five insulating resistances and a like number of N-legs. Only the N-legs 22, and not the resistance layers therebelow, are illustrated in FIGURE 3. In the embodiment of FIGURE 3, all of the P- contacts 23, 24 of the individual elements are connected in series. The advantage of this arrangement is that the voltage at the input of the circuit as a whole can be greater than in the case of the individual elements shown in FIGURES l and 2.
FIGURE 4 shows an arrangement according to the present invention wherein the P- contacts 33 and 34 have a comblike configuration, the prongs of the combs nesting within each other. Not illustrated in FIGURE 4 is the resistance layer which is below the thermoelectric N- layer 32.
It will thus be seen that, in accordance with the present invention, there is provided a controllable electrical resistance, which comprises resistance means forming a thin first layer made of a semiconductor or insulating material, means forming an electrically conductive second layer on the first layer, two thermoelectric contacts on this second layer and forming therewith a Peltier element, and means for applying to the contacts a voltage which causes those electrons that are not in thermal equilibrium with their surroundings to pass out of one of the contacts through the second layer and into the first layer, thereby to modulate the resistance thereof.
The following are illustrative examples of thermoelectric elements according to the present invention.
The element of FIGURE 1 has a resistance layer 1 which is made of SiO and has a thickness of .01 mil, a thermoelectric p-layer 2 which is made of p+-silicon and has a thickness of .01 mil, and two N-contacts 3 and 4 made of aluminium. The collector electrode 5 is made of n+-silicon and has a thickness of 10 mils. The voltages applied by voltage sources 6 and 7 are 10-100 mv. and 10-100 v., respectively.
The element of FIGURE 2 has an insulating layer 18 which is made of SiO and has a thickness of .04 mil, a resistance layer 11 which is made of intrinsic silicon and has a thickness of .1 mil, an N-conductive layer 12 which is made of n -silicon and has a thickness of .1 mil, and P- contacts 13 and 14 made of p+-silicon. The layers 19 and 20 are made of aluminium and have a thickness of .01 mil. The voltages applied by voltage sources 6 and 7 are mv. and 10 v., respectively.
It will be understood that the above description of the present invention is susceptible to various modifications, changes, and adaptations.
I claim:
1. A controllable electrical resistance, comprising in combination:
(a) resistance means forming a thin first layer made of a semiconductor or insulating material;
(b) means forming an electrically conductive second layer on said first layer;
(c) two thermoelectric contacts on said second layer and forming therewith a Peltier element;
(d) means for applying across said contacts a first voltage which causes those electrons that are not in thermal equilibrium with their surroundings to pass out of one of said contacts through said second layer and into said first layer thereby to modulate the resistance thereof.
2. A controllable electrical resistance as defined in claim 1, further comprising:
(e) a collector electrode arranged on that side of said first layer which is opposite the side on which said second layer is located.
3. A controllable electrical resistance as defined in claim 2, further comprising:
(f) means for applying across one of said contacts and said collector electrode a second voltage which is no greater than the breakdown voltage of said first layer.
4. A controllable electrical resistance as defined in claim 1 wherein said first voltage is smaller than twice the Peltier voltage of the element.
5. A controllable electrical resistance as defined in claim 1 wherein said first layer is made of a semiconductor material having an energy gap greater than 0.7 electron volt.
6. A controllable electrical resistance as defined in claim 1, further comprising:
(e) a collector electrode arranged on that side of said first layer which is opposite the side on which said second layer is located;
(f) a third layer made of insulating material arranged on that side of said collector electrode on which said first layer is located, said third layer having an opening within which said first and second layers are located;
(g) said contacts extending laterally beyond said opening of said third layer and lying on said third layer.
7. A controllable electrical resistance as defined in claim 6 wherein said third layer is an oxide layer.
8. A controllable electrical resistance as defined in claim 1 wherein said contacts have a comblike configuration, the prongs of the combs nesting within each other.
9. A controllable electrical resistance comprising a plurality of serially connected Peltier elements each as defined in claim 1, the same being arranged on a common layer constituting said first layer of each respective Peltier element.
10. A controllable electrical resistance as defined in claim 1 wherein said first layer has a thickness of between 10 and 10 A.
References Cited UNITED STATES PATENTS 3,252,013 5/1966 Stanton 317-235 JOHN W. HUCKERT, Primary Examiner.
0 J. D. CRAIG, Assistant Examiner.
US. Cl. X.R.
US600105A 1965-12-08 1966-12-08 Controllable electrical resistance Expired - Lifetime US3419767A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DET29965A DE1283978B (en) 1965-12-08 1965-12-08 Electronic solid-state component with electrical resistance controllable by charge carrier injection
DET0030130 1965-12-27
DET0030180 1965-12-30
DET0030179 1965-12-30

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US600105A Expired - Lifetime US3419767A (en) 1965-12-08 1966-12-08 Controllable electrical resistance
US602407A Expired - Lifetime US3460008A (en) 1965-12-08 1966-12-16 Controllable tunnel diode
US605341A Expired - Lifetime US3504240A (en) 1965-12-08 1966-12-28 Semiconductor device utilizing heat injection of majority carriers
US605340A Expired - Lifetime US3495141A (en) 1965-12-08 1966-12-28 Controllable schottky diode

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US602407A Expired - Lifetime US3460008A (en) 1965-12-08 1966-12-16 Controllable tunnel diode
US605341A Expired - Lifetime US3504240A (en) 1965-12-08 1966-12-28 Semiconductor device utilizing heat injection of majority carriers
US605340A Expired - Lifetime US3495141A (en) 1965-12-08 1966-12-28 Controllable schottky diode

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DE (1) DE1283978B (en)
FR (4) FR1504201A (en)
GB (4) GB1173756A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE29676E (en) * 1973-09-03 1978-06-20 Nippon Electric Company, Limited Matrix resistors for integrated circuit
US4561006A (en) * 1982-07-06 1985-12-24 Sperry Corporation Integrated circuit package with integral heating circuit
WO1993008600A1 (en) * 1991-10-15 1993-04-29 Velox Computer Technology, Inc. Intrinsically controlled cooling container
WO1993020589A1 (en) * 1992-03-30 1993-10-14 Yater Joseph C Reversible thermoelectric converter
WO2001022490A1 (en) * 1999-09-22 2001-03-29 Infineon Technologies Ag Selective cooling of partial surfaces pertaining to a flat electronic component
US20120031450A1 (en) * 2009-01-20 2012-02-09 IHP GmbH - Innovations for High Performance Micro- electronics / Leibniz-Institut fur Innovative Mik Thermoelectric semiconductor component

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US3713909A (en) * 1970-11-06 1973-01-30 North American Rockwell Method of producing a tunnel diode
US3699362A (en) * 1971-05-27 1972-10-17 Ibm Transistor logic circuit
DE2247962C3 (en) * 1972-09-29 1979-03-01 Siemens Ag, 1000 Berlin Und 8000 Muenchen Semiconductor-based thermocouple array
US4238759A (en) * 1978-10-20 1980-12-09 University Of Delaware Monolithic Peltier temperature controlled junction
US4754141A (en) * 1985-08-22 1988-06-28 High Technology Sensors, Inc. Modulated infrared source
CA2050843C (en) * 1990-09-18 1999-08-03 Kazuo Ohtsubo Noise eliminating element and electrical circuit having the same
US5837929A (en) * 1994-07-05 1998-11-17 Mantron, Inc. Microelectronic thermoelectric device and systems incorporating such device

Citations (1)

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US3252013A (en) * 1963-01-18 1966-05-17 Varo Thermal oscillator utilizing rate of thermal flow

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BE543676A (en) * 1954-12-15 1955-12-30
BE552928A (en) * 1957-03-18
US3005937A (en) * 1958-08-21 1961-10-24 Rca Corp Semiconductor signal translating devices
US2975638A (en) * 1958-09-18 1961-03-21 Honeywell Regulator Co Electrical hygrometer device
NL269345A (en) * 1960-09-19
US3254278A (en) * 1960-11-14 1966-05-31 Hoffman Electronics Corp Tunnel diode device
NL283434A (en) * 1961-09-25
US3258608A (en) * 1963-05-31 1966-06-28 Sperry Rand Corp Thin film signal translating device
US3290127A (en) * 1964-03-30 1966-12-06 Bell Telephone Labor Inc Barrier diode with metal contact and method of making

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Publication number Priority date Publication date Assignee Title
US3252013A (en) * 1963-01-18 1966-05-17 Varo Thermal oscillator utilizing rate of thermal flow

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE29676E (en) * 1973-09-03 1978-06-20 Nippon Electric Company, Limited Matrix resistors for integrated circuit
US4561006A (en) * 1982-07-06 1985-12-24 Sperry Corporation Integrated circuit package with integral heating circuit
WO1993008600A1 (en) * 1991-10-15 1993-04-29 Velox Computer Technology, Inc. Intrinsically controlled cooling container
WO1993020589A1 (en) * 1992-03-30 1993-10-14 Yater Joseph C Reversible thermoelectric converter
US5356484A (en) * 1992-03-30 1994-10-18 Yater Joseph C Reversible thermoelectric converter
US5470395A (en) * 1992-03-30 1995-11-28 Yater Joseph C Reversible thermoelectric converter
US5623119A (en) * 1992-03-30 1997-04-22 Yater Joseph C Reversible thermoelectric converter
US5889287A (en) * 1992-03-30 1999-03-30 Yater; Joseph C. Reversible thermoelectric converter
WO2001022490A1 (en) * 1999-09-22 2001-03-29 Infineon Technologies Ag Selective cooling of partial surfaces pertaining to a flat electronic component
US20120031450A1 (en) * 2009-01-20 2012-02-09 IHP GmbH - Innovations for High Performance Micro- electronics / Leibniz-Institut fur Innovative Mik Thermoelectric semiconductor component
US8809667B2 (en) * 2009-01-20 2014-08-19 IHP GmbH—Innovations for High Performance Microelectronics Thermoelectric semiconductor component

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US3495141A (en) 1970-02-10
US3504240A (en) 1970-03-31
GB1173919A (en) 1969-12-10
US3460008A (en) 1969-08-05
FR1506947A (en) 1967-12-22
DE1283978B (en) 1968-11-28
FR1506948A (en) 1967-12-22
DE1514914A1 (en) 1970-04-02
DE1514913B2 (en) 1972-11-30
FR1505988A (en) 1967-12-15
GB1173575A (en) 1969-12-10
GB1175049A (en) 1969-12-23
DE1514914B2 (en) 1972-12-14
GB1173756A (en) 1969-12-10
DE1514911A1 (en) 1969-05-29
FR1504201A (en) 1967-12-01
DE1514911B2 (en) 1972-08-17
DE1514913A1 (en) 1969-08-14

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