US3725671A - Pyrotechnic eradication of microcircuits - Google Patents

Pyrotechnic eradication of microcircuits Download PDF

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US3725671A
US3725671A US00090209A US3725671DA US3725671A US 3725671 A US3725671 A US 3725671A US 00090209 A US00090209 A US 00090209A US 3725671D A US3725671D A US 3725671DA US 3725671 A US3725671 A US 3725671A
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pyrotechnic
fluoride
microcircuit
film
eradication
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F Keister
J Rust
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US Department of Navy
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/073—Special arrangements for circuits, e.g. for protecting identification code in memory
    • G06K19/07309—Means for preventing undesired reading or writing from or onto record carriers
    • G06K19/07372—Means for preventing undesired reading or writing from or onto record carriers by detecting tampering with the circuit
    • G06K19/07381—Means for preventing undesired reading or writing from or onto record carriers by detecting tampering with the circuit with deactivation or otherwise incapacitation of at least a part of the circuit upon detected tampering
    • C—CHEMISTRY; METALLURGY
    • C06—EXPLOSIVES; MATCHES
    • C06B—EXPLOSIVES OR THERMIC COMPOSITIONS; MANUFACTURE THEREOF; USE OF SINGLE SUBSTANCES AS EXPLOSIVES
    • C06B27/00—Compositions containing a metal, boron, silicon, selenium or tellurium or mixtures, intercompounds or hydrides thereof, and hydrocarbons or halogenated hydrocarbons
    • C—CHEMISTRY; METALLURGY
    • C06—EXPLOSIVES; MATCHES
    • C06B—EXPLOSIVES OR THERMIC COMPOSITIONS; MANUFACTURE THEREOF; USE OF SINGLE SUBSTANCES AS EXPLOSIVES
    • C06B43/00—Compositions characterised by explosive or thermic constituents not provided for in groups C06B25/00 - C06B41/00
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F41—WEAPONS
    • F41H—ARMOUR; ARMOURED TURRETS; ARMOURED OR ARMED VEHICLES; MEANS OF ATTACK OR DEFENCE, e.g. CAMOUFLAGE, IN GENERAL
    • F41H13/00—Means of attack or defence not otherwise provided for
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/073—Special arrangements for circuits, e.g. for protecting identification code in memory
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/073—Special arrangements for circuits, e.g. for protecting identification code in memory
    • G06K19/07309—Means for preventing undesired reading or writing from or onto record carriers
    • G06K19/07372—Means for preventing undesired reading or writing from or onto record carriers by detecting tampering with the circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/57—Protection from inspection, reverse engineering or tampering
    • H01L23/573—Protection from inspection, reverse engineering or tampering using passive means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0286—Programmable, customizable or modifiable circuits
    • H05K1/0293—Individual printed conductors which are adapted for modification, e.g. fusable or breakable conductors, printed switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/15165—Monolayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0275—Security details, e.g. tampering prevention or detection
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0302—Properties and characteristics in general
    • H05K2201/0317—Thin film conductor layer; Thin film passive component
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1163—Chemical reaction, e.g. heating solder by exothermic reaction
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/17—Post-manufacturing processes
    • H05K2203/175—Configurations of connections suitable for easy deletion, e.g. modifiable circuits or temporary conductors for electroplating; Processes for deleting connections
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/922—Active solid-state devices, e.g. transistors, solid-state diodes with means to prevent inspection of or tampering with an integrated circuit, e.g. "smart card", anti-tamper

Definitions

  • ABSTRACT An anticompromise pyrotechnic eradication thin film circuit module having thin films of perfluoropolymer and metal thereon in sufficient quantity to produce a pyrotechnic reaction to cause heat of fusion of the metals of the thin film circuit to destroy the circuit beyond recognition and repair.
  • This invention relates to anticompromise circuits and more particularly to self-destruct circuit modules in which the destructive materials are mixtures or deposited film layers of perfluoropolymer and metal to produce pyrotechnic reaction.
  • Circuit destruction devices are known that use explosives or combustible materials packaged to be placed adjacent the circuit components to be destroyed. The explosion or fire created thereby was intended to damage or destroy the circuits beyond recognition or repair.
  • the disadvantages of such destruct systems were that the destruction was usually local and the package was too bulky to position at strategic places of the circuit where space was at a premium.
  • One known circuit destruct utilizes an oxidant in a combustible thin film layer over or under a thin film circuit to destroy the circuit when a pyrotechnic package placed somewhere on the circuit module is ignited.
  • Another known method of circuit destruction lies in the use of acids which can be set free to etch away the thin film circuit.
  • a self-destruct mixture or combination of thin film materials are made compatible with, and become an integral part of, the thin film circuit on a module.
  • These self-destruct materials are taken from a group of perfluoropolymers, having as high a fluorine content as possible, and metals which may best be used for this purpose in powdered form. While there are many perfluoropolymers and metals to choose from, one good example may be polyfluoroethylene, known as Teflon, and magnesium or aluminum powdered metals. It is accordingly a general object of this invention to provide a pyrotechnic destruct film coating for thin film circuit modules to destroy the circuit beyond recognition, use,
  • FIG. 1 is a cross section of a circuit module in which the pyrotechnic material is incorporated as a die bond material between a semiconductor chip and the microcircuit substrate;
  • FIG. 2 is a cross-sectional view of a thin film flat pack in which the pyrotechnic material is used as the bondin g agent between the microcircuit and the substrate;
  • FIG. 3 is a cross-sectional view of a thin film circuit module with the pyrotechnic material on top of the microcircuit;
  • FIG. 4 is a cross section of a thin film circuit module in which the pyrotechnic material is deposited directly on the microcircuit as alternate thin film layers.
  • a microcircuit substrate 10 is mounted on a substrate board or support 11.
  • a microcircuit thin film or thick film ,12 is deposited on the microcircuit substrate 10 with a pyrotechnic material 13 of perfluoropolymer and metal deposited or pasted on top to support a semiconductor element such as a semiconductor chip 14.
  • a separate circuit in the microcircuit coupled through appropriate switch means to a voltage source is connected by ignition wire 15 to the pyrotechnic film to produce pyrotechnic reaction and destruction of the microcircuit whenever it is desirable to do so.
  • a flatpack substrate 20 has the pyrotechnic material 13 used to bond a thin film or thick film microcircuit 21 thereon with the ignition wire 15 connecting it with terminals 22 on substrate 20.
  • a semiconductor chip 14 may also rest on the top of the microcircuit film 21 and be electrically connected by connecting wires 23.
  • the microcircuit film 21 is connected to terminals, one of which is illustrated in this figure by the reference character 24.
  • the pyrotechnic material 13 of perfluoropolymer and powdered metal will destroy the microcircuit film 21 beyond recognition or use.
  • the thin film or thick film microcircuit 21 is deposited on the microcircuit substrate 20.
  • An electrical insulating film 25 is deposited over the microcircuit film 21 and the pyrotechnic film or coating 13 is deposited over the insulating film 25.
  • the pyrotechnic film 13 has leads 26 adapted for connection to the microcircuit or to an external power source, as desired, to energize and ignite the pyrotechnic material whenever desirable and feasible to do so to avoid compromise.
  • the thin film or thick film microcircuit 21 is deposited on the microcircuit substrate 20 and the pyrotechnic material is deposited in layers.
  • the first layer is a perfluoropolymer film 30 with a film of aluminum 31 deposited thereover.
  • the aluminum thin film may be connected electrically through a switch to a voltage source or a top layer of nichrome 32 may be deposited over the aluminum and connected to the destruct circuit, as desired.
  • the nichrome film will act as igniter for the pyrotechnic films of aluminum and perfluoropolymer.
  • the perfluoropolymer and metal mixtures providing the pyrotechnic reactions may be of any of the well known mixtures as listed hereinbelow although best results are acquired where the fluorine content is high.
  • Two good examples of high fluorine content are polyfluoroethylene, commonly known as TEFLON, and perfluoroalkylenetriazine.
  • Good powdered metal constituents are magnesium and aluminum.
  • the following table discloseswthe pyrotechnic reaction of heat generated by several combinations of metals and fluorides:
  • magnesium-Teflon (-4105 BTU/lb.) and aluminum-Teflon (-3133 BTU/lb.) are extremely efficient systems based on their high enthalpy change of reaction (Al-1). These systems are triggered by heat and once started are self-sustaining.
  • the particles of the reactants should be intimately mixed, finely divided, and preferably of colloidal dimensions.
  • Teflon is the polymer which has been emphasized, other fluorine-containing polymers are also applicable.
  • a polymer of perfluoropropylene epoxide when mixed with aluminum powder, can be ignited and burns rapidly with intense heat. This polymer is available as a very viscous oil. It can be easily mixed with powdered metals and the mixture can be made into a stiff putty or dry paste.
  • the polymer should be high in fluorine, should be stable in storage without any chance of spontaneous ignition, and must be malleable so that it can be easily mixed with metal powder.
  • the above-noted preferred embodiments of the eradication film or coating provide heat and flame of sufficient intensity to fuse, vaporize, or otherwise eradicate all circuit identification. This fusion is accomplished with a small quantity of reactant in a compatible integral part of the microcircuit.
  • the reliability of the microcircuit or semiconductor devices attached to the microcircuit is not adversely affected by the reactants prior to eradication. These reactants are noncorrosive and are stable and when reaction is initiated, the pyrotechnic reaction takes place without explosion. The reaction of these destruct films evolves with only a minimum quantity of gas so that built up pressures will not shatter device packages or harm adjacent, noncritical circuits.
  • This eradication means is applicable for electronic circuits and electronic systems (especially those which are microminiaturized) which are of a critical nature, such that disclosure to enemy forces can be avoided.
  • the selfdestruct mode could be switched and the perfluoropolymer-metal pyrotechnic reaction would destroy the critical portions of the anticompromise circuit.
  • a pyrotechnic eradication means compatible with a microcircuit on a circuit film module comprising:
  • pyrotechnic materials coating one surface of said microcircuit film with electrical conductors connecting said pyrotechnic materials and said microcircuit film adapted to conduct a current to energize said pyrotechnic material, said pyrotechnic materials being from a group of perfiuoropolymers high in fluorine content and metals whereby said microcircuit film can be destroyed by exothermic reaction when said pyrotechnic materials are heated to the ignition point by electrical energization.

Abstract

An anticompromise pyrotechnic eradication thin film circuit module having thin films of perfluoropolymer and metal thereon in sufficient quantity to produce a pyrotechnic reaction to cause heat of fusion of the metals of the thin film circuit to destroy the circuit beyond recognition and repair.

Description

nite States Patent [191 Keister et al.
[ 51 Apr. 3, 1973 [54] PYROTECHNIC ERADICATION OF MICROCIRCUITS [75] Inventors: Frank Z. Keister, Culver City; John B. Rust, Malibu, both of Calif.
[73] Assignee: The United States at America as represented by the Secretary of the Navy 22 Filed: Nov. 2, 1970 21 Appl.No.:9 0,209
[5 6] References Cited UNITED STATES PATENTS 3,666,967 5/1972 Keister et al. ..307/202 SEMICONDUCTOR CHIP 4 THICK FILM OR THIN FILM DIE aouo PAD 12 3,697,668 10/1972 Campbell ..174/68.5 3,394,218 7/1968 Foudriat ..174/68.5
3,565,706 2/1971 White ..l49/37 3,347,721 10/1967 Jago ..149/37 Primary Examiner-Benjamin A. Borchelt Assistant Examiner-H. A. Birmiel Attorney-R. S. Sciascia and P. S. Collignon [57] ABSTRACT An anticompromise pyrotechnic eradication thin film circuit module having thin films of perfluoropolymer and metal thereon in sufficient quantity to produce a pyrotechnic reaction to cause heat of fusion of the metals of the thin film circuit to destroy the circuit beyond recognition and repair.
V 5 Claims, 4 Drawing Figures PYROTECHNIC IGNITION WIRE PAIEIIIEIIIPII3 I375 37,725,671
SEMICONDUCTOR CHIP PYROTECHNIC THICK FILM 0R THIN FILM |GN|T|ON w|RE V 7QI/ PYROTECHNIC IGNITION WIRE h \MICROCIRCUIT FLATPACK uIasTIII/ITI: 2 0 FIG. 2
IGNITION WIRE PYROTECHNIC INSULATING FILM k MICROCIRCUIT 2/ 1 W I SUBSTRATE 20 NICHROME IGNITER FILM,IF NECESSARY SUBSTRATE INVENTORS FRANK Z. KE/STE/P JOHN B. RUST ATTORNEY I PYROTECHNIC ERADICATION OF MICROCIRCUIITS BACKGROUND OF THE INVENTION This invention relates to anticompromise circuits and more particularly to self-destruct circuit modules in which the destructive materials are mixtures or deposited film layers of perfluoropolymer and metal to produce pyrotechnic reaction.
Circuit destruction devices are known that use explosives or combustible materials packaged to be placed adjacent the circuit components to be destroyed. The explosion or fire created thereby was intended to damage or destroy the circuits beyond recognition or repair. The disadvantages of such destruct systems were that the destruction was usually local and the package was too bulky to position at strategic places of the circuit where space was at a premium. One known circuit destruct utilizes an oxidant in a combustible thin film layer over or under a thin film circuit to destroy the circuit when a pyrotechnic package placed somewhere on the circuit module is ignited. Another known method of circuit destruction lies in the use of acids which can be set free to etch away the thin film circuit.
SUMMARY OF THE INVENTION In the present invention a self-destruct mixture or combination of thin film materials are made compatible with, and become an integral part of, the thin film circuit on a module. These self-destruct materials are taken from a group of perfluoropolymers, having as high a fluorine content as possible, and metals which may best be used for this purpose in powdered form. While there are many perfluoropolymers and metals to choose from, one good example may be polyfluoroethylene, known as Teflon, and magnesium or aluminum powdered metals. It is accordingly a general object of this invention to provide a pyrotechnic destruct film coating for thin film circuit modules to destroy the circuit beyond recognition, use,
1 or reconstruction at will to prevent circuit compromise with enemy forces.
DESCRIPTION OF THE DRAWING These and other objects and the attendant advantages, features, and uses will become more apparent to those skilled in the art as a more detailed description proceeds when considered along with the accompanying drawing, in which:
FIG. 1 is a cross section of a circuit module in which the pyrotechnic material is incorporated as a die bond material between a semiconductor chip and the microcircuit substrate;
FIG. 2 is a cross-sectional view of a thin film flat pack in which the pyrotechnic material is used as the bondin g agent between the microcircuit and the substrate;
FIG. 3 is a cross-sectional view of a thin film circuit module with the pyrotechnic material on top of the microcircuit; and
FIG. 4 is a cross section of a thin film circuit module in which the pyrotechnic material is deposited directly on the microcircuit as alternate thin film layers.
DESCRIPTION OF THE PREFERRED EMBODIMENT Referring more particularly to FIG. 1, a microcircuit substrate 10 is mounted on a substrate board or support 11. A microcircuit thin film or thick film ,12 is deposited on the microcircuit substrate 10 with a pyrotechnic material 13 of perfluoropolymer and metal deposited or pasted on top to support a semiconductor element such as a semiconductor chip 14. A separate circuit in the microcircuit coupled through appropriate switch means to a voltage source is connected by ignition wire 15 to the pyrotechnic film to produce pyrotechnic reaction and destruction of the microcircuit whenever it is desirable to do so.
Referring to FIG. 2, like reference characters referring to like parts, a flatpack substrate 20 has the pyrotechnic material 13 used to bond a thin film or thick film microcircuit 21 thereon with the ignition wire 15 connecting it with terminals 22 on substrate 20. A semiconductor chip 14 may also rest on the top of the microcircuit film 21 and be electrically connected by connecting wires 23. The microcircuit film 21 is connected to terminals, one of which is illustrated in this figure by the reference character 24. The pyrotechnic material 13 of perfluoropolymer and powdered metal will destroy the microcircuit film 21 beyond recognition or use.
Referring to FIG. 3, the thin film or thick film microcircuit 21 is deposited on the microcircuit substrate 20. An electrical insulating film 25 is deposited over the microcircuit film 21 and the pyrotechnic film or coating 13 is deposited over the insulating film 25. The pyrotechnic film 13 has leads 26 adapted for connection to the microcircuit or to an external power source, as desired, to energize and ignite the pyrotechnic material whenever desirable and feasible to do so to avoid compromise.
Referring to FIG. 4, the thin film or thick film microcircuit 21 is deposited on the microcircuit substrate 20 and the pyrotechnic material is deposited in layers. The first layer is a perfluoropolymer film 30 with a film of aluminum 31 deposited thereover. The aluminum thin film may be connected electrically through a switch to a voltage source or a top layer of nichrome 32 may be deposited over the aluminum and connected to the destruct circuit, as desired. The nichrome film will act as igniter for the pyrotechnic films of aluminum and perfluoropolymer.
The perfluoropolymer and metal mixtures providing the pyrotechnic reactions may be of any of the well known mixtures as listed hereinbelow although best results are acquired where the fluorine content is high. Two good examples of high fluorine content are polyfluoroethylene, commonly known as TEFLON, and perfluoroalkylenetriazine. Good powdered metal constituents are magnesium and aluminum. The following table discloseswthe pyrotechnic reaction of heat generated by several combinations of metals and fluorides:
TABLE I Heats of Formation of Fluorides and Enthalpy of Reaction of M Teflon Metal Fluoride Carbon. The Compounds Listed are in Their Solid State Unless Noted Otherwise. Compound AH," (298K) (Kcal/mole) Reaction of Element With Teflon AH (reaction 298K) (BTU/lb) GROUP 1, ALKALI METALS LiF l46 5492 NaF l36 3277 KF 135 243l GROUP II, ALKALINE-EARTH METALS BeFALiquid) 227 396l MgF, 266 4105 CaF, 290 3853 GROUP III, BORON-ALUMINUM GROUP BF: 274 2683 AlF 323 3133 ScF, 367 33 l 3 Y F: 397 2755 GROUP IV, CARBON-TITANIUM GROUP SiF 37l 2467 TiF 3 1 5 2359 ZrF 445 2359 This table shows the standard enthalpy change for various Teflon-metal and Teflon-nonmetal systems. Examination of this table shows that magnesium-Teflon (-4105 BTU/lb.) and aluminum-Teflon (-3133 BTU/lb.) are extremely efficient systems based on their high enthalpy change of reaction (Al-1). These systems are triggered by heat and once started are self-sustaining. The particles of the reactants should be intimately mixed, finely divided, and preferably of colloidal dimensions.
Although Teflon is the polymer which has been emphasized, other fluorine-containing polymers are also applicable. A polymer of perfluoropropylene epoxide, when mixed with aluminum powder, can be ignited and burns rapidly with intense heat. This polymer is available as a very viscous oil. It can be easily mixed with powdered metals and the mixture can be made into a stiff putty or dry paste. The polymer should be high in fluorine, should be stable in storage without any chance of spontaneous ignition, and must be malleable so that it can be easily mixed with metal powder.
The above-noted preferred embodiments of the eradication film or coating provide heat and flame of sufficient intensity to fuse, vaporize, or otherwise eradicate all circuit identification. This fusion is accomplished with a small quantity of reactant in a compatible integral part of the microcircuit. The reliability of the microcircuit or semiconductor devices attached to the microcircuit is not adversely affected by the reactants prior to eradication. These reactants are noncorrosive and are stable and when reaction is initiated, the pyrotechnic reaction takes place without explosion. The reaction of these destruct films evolves with only a minimum quantity of gas so that built up pressures will not shatter device packages or harm adjacent, noncritical circuits.
This eradication means is applicable for electronic circuits and electronic systems (especially those which are microminiaturized) which are of a critical nature, such that disclosure to enemy forces can be avoided.
Should the unfriendly party threaten, capture, or attempt to learn the identity of the circuit, the selfdestruct mode could be switched and the perfluoropolymer-metal pyrotechnic reaction would destroy the critical portions of the anticompromise circuit.
While many modifications may be made in the combinations of perfluoropolymers and powdered metals and in the degree or extent of volume, it is to be understood that we desire to be limited in the spirit of our invention only by the scope of the appended claims.
We claim:
1. A pyrotechnic eradication means compatible with a microcircuit on a circuit film module comprising:
a microcircuit substrate;
a microcircuit film supported on said microcircuit substrate; and
pyrotechnic materials coating one surface of said microcircuit film with electrical conductors connecting said pyrotechnic materials and said microcircuit film adapted to conduct a current to energize said pyrotechnic material, said pyrotechnic materials being from a group of perfiuoropolymers high in fluorine content and metals whereby said microcircuit film can be destroyed by exothermic reaction when said pyrotechnic materials are heated to the ignition point by electrical energization.
2. A pyrotechnic eradication means as set forth in claim 1 wherein said pyrotechnic material coating said microcircuit film operates as a bonding agent between said microcircuit substrate and said microcircuit film, said perfluoropolymer material having electrical insulating qualities for said microcircuit film.
3. A pyrotechnic eradication means as set forth in claim 1 wherein said pyrotechnic materials coating overlies said microcircuit film, said perfluoropolymer operating as an electrical insulating material.
4. A pyrotechnic eradication means as set forth in claim 1 wherein said pyrotechnic material of perfluoropolymers and powdered metals are from the group mixtures consisting of lithium fluoride, sodium fluoride, potassium fluoride, beryllium fluoride, magnesium fluoride, calcium fluoride, boron fluoride, alu' minum fluoride, scandium fluoride, yttrium fluoride, silicon fluoride, titanium trifluoride, and zirconium fluoride.
5. A pyrotechnic eradication means as set forth in claim 1 wherein said perfluoropolymer material is of the group consisting of polyfluoroethylene and perfluoroalkylenetriazine and said metal is of the group consisting of aluminum and magnesium.

Claims (4)

  1. 2. A pyrotechnic eradication means as set forth in claim 1 wherein said pyrotechnic material coating said microcircuit film operates as a bonding agent between said microcircuit substrate and said microcircuit film, said perfluoropolymer material having electrical insulating qualities for said microcircuit film.
  2. 3. A pyrotechnic eradication means as set forth in claim 1 wherein said pyrotechnic materials coating overlies said microcircuit film, said perfluoropolymer operating as an electrical insulating material.
  3. 4. A pyrotechnic eradication means as set forth in claim 1 wherein said pyrotechnic material of perfluoropolymers and powdered metAls are from the group mixtures consisting of lithium fluoride, sodium fluoride, potassium fluoride, beryllium fluoride, magnesium fluoride, calcium fluoride, boron fluoride, aluminum fluoride, scandium fluoride, yttrium fluoride, silicon fluoride, titanium trifluoride, and zirconium fluoride.
  4. 5. A pyrotechnic eradication means as set forth in claim 1 wherein said perfluoropolymer material is of the group consisting of polyfluoroethylene and perfluoroalkylenetriazine and said metal is of the group consisting of aluminum and magnesium.
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US4335653A (en) * 1979-09-03 1982-06-22 Aktiebolaget Bofors Electric igniter with conductive bodies and thin connector
US4339995A (en) * 1979-02-06 1982-07-20 Messerschmitt-Bolkow-Blohm Gmbh Method for destroying structures such as concrete walls
US4393779A (en) * 1977-10-20 1983-07-19 Dynamit Nobel Aktiengesellschaft Electric detonator element
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US5094167A (en) * 1990-03-14 1992-03-10 Schlumberger Technology Corporation Shape charge for a perforating gun including an integrated circuit detonator and wire contactor responsive to ordinary current for detonation
US5256899A (en) * 1991-12-24 1993-10-26 Xerox Corporation Integrated circuit fuse link having an exothermic charge adjacent the fuse portion
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EP1276151A2 (en) * 2001-06-27 2003-01-15 Infineon Technologies AG Semiconductor device protected against analysis and method of fabricating the same
EP1282170A1 (en) * 2001-07-30 2003-02-05 Abb Research Ltd. Short-circuit resistant power semiconductor device
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US7489013B1 (en) * 2005-10-17 2009-02-10 Teledyne Technologies Incorporated Destructor integrated circuit chip, interposer electronic device and methods
US7640658B1 (en) 2005-10-18 2010-01-05 Teledyne Technologies Incorporated Methods for forming an anti-tamper pattern
US20100032776A1 (en) * 2005-01-25 2010-02-11 Teledyne Technologies Incoporated Destructor integrated circuit chip, interposer electronic device and methods
EP2165346A1 (en) * 2007-06-15 2010-03-24 Spectre Enterprises, Inc. Charge system for destroying chips on a circuit board and method for destroying chips on a circuit board
US9431354B2 (en) 2014-11-06 2016-08-30 International Business Machines Corporation Activating reactions in integrated circuits through electrical discharge
US9812407B2 (en) 2015-09-29 2017-11-07 Honeywell International Inc. Self-destructing electronic device
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US4393779A (en) * 1977-10-20 1983-07-19 Dynamit Nobel Aktiengesellschaft Electric detonator element
US4256038A (en) * 1979-02-06 1981-03-17 The United States Of America As Represented By The United States Department Of Energy Perfluorocarbon vapor tagging of blasting cap detonators
US4339995A (en) * 1979-02-06 1982-07-20 Messerschmitt-Bolkow-Blohm Gmbh Method for destroying structures such as concrete walls
US4335653A (en) * 1979-09-03 1982-06-22 Aktiebolaget Bofors Electric igniter with conductive bodies and thin connector
US4691350A (en) * 1985-10-30 1987-09-01 Ncr Corporation Security device for stored sensitive data
US4860351A (en) * 1986-11-05 1989-08-22 Ibm Corporation Tamper-resistant packaging for protection of information stored in electronic circuitry
US5094167A (en) * 1990-03-14 1992-03-10 Schlumberger Technology Corporation Shape charge for a perforating gun including an integrated circuit detonator and wire contactor responsive to ordinary current for detonation
US5256899A (en) * 1991-12-24 1993-10-26 Xerox Corporation Integrated circuit fuse link having an exothermic charge adjacent the fuse portion
US5458912A (en) * 1993-03-08 1995-10-17 Dow Corning Corporation Tamper-proof electronic coatings
US5883429A (en) * 1995-04-25 1999-03-16 Siemens Aktiengesellschaft Chip cover
WO1996034409A1 (en) * 1995-04-25 1996-10-31 Siemens Aktiengesellschaft Chip cover
GB2323212A (en) * 1995-12-20 1998-09-16 Intel Corp Secure semiconductor device
US5824571A (en) * 1995-12-20 1998-10-20 Intel Corporation Multi-layered contacting for securing integrated circuits
WO1997022990A1 (en) * 1995-12-20 1997-06-26 Intel Corporation Secure semiconductor device
GB2323212B (en) * 1995-12-20 2000-12-13 Intel Corp Secure semiconductor device
US6133146A (en) * 1996-05-09 2000-10-17 Scb Technologies, Inc. Semiconductor bridge device and method of making the same
WO1998057529A1 (en) * 1997-06-13 1998-12-17 The Regents Of The University Of California Microfabricated high aspect ratio device with electrical isolation and interconnections
US6121552A (en) * 1997-06-13 2000-09-19 The Regents Of The University Of Caliofornia Microfabricated high aspect ratio device with an electrical isolation trench
US6960488B2 (en) 1997-06-13 2005-11-01 The Regents Of The University Of California Method of fabricating a microfabricated high aspect ratio device with electrical isolation
WO2000000453A3 (en) * 1998-06-29 2000-03-16 Eidgenoess Munitionsfab Thun Pyrotechnic layer for targeted data destruction on data carriers
WO2000000453A2 (en) * 1998-06-29 2000-01-06 Sm Schweizerische Munitionsunternehmung Ag Pyrotechnic layer for targeted data destruction on data carriers
EP1059275A1 (en) * 1999-06-07 2000-12-13 SM Schweizerische Munitionsunternehmung Pyrotechnic layer for targeted destruction of machine readable data on a data storage medium
WO2002016128A1 (en) * 2000-08-21 2002-02-28 Lockheed Martin Corporation Structural energetic materials
EP1276151A3 (en) * 2001-06-27 2004-12-01 Infineon Technologies AG Semiconductor device protected against analysis and method of fabricating the same
EP1276151A2 (en) * 2001-06-27 2003-01-15 Infineon Technologies AG Semiconductor device protected against analysis and method of fabricating the same
EP1282170A1 (en) * 2001-07-30 2003-02-05 Abb Research Ltd. Short-circuit resistant power semiconductor device
WO2003066248A2 (en) * 2002-02-06 2003-08-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Device and method for disabling electronic devices
WO2003066248A3 (en) * 2002-02-06 2004-01-15 Fraunhofer Ges Forschung Device and method for disabling electronic devices
WO2003077194A2 (en) * 2002-03-13 2003-09-18 Commissariat A L'energie Atomique Secure electronic device
US20040134993A1 (en) * 2002-03-13 2004-07-15 Francois Vacherand Secure electronic device
WO2003077194A3 (en) * 2002-03-13 2004-03-11 Commissariat Energie Atomique Secure electronic device
US6926204B2 (en) 2002-03-13 2005-08-09 Commissariat A L'energie Atomique Secure electronic device
FR2837304A1 (en) * 2002-03-13 2003-09-19 Commissariat Energie Atomique SECURE ELECTRONIC DEVICE
US20040103031A1 (en) * 2002-08-15 2004-05-27 Henry Weinschenk System and method for electronically locating items
FR2872610A1 (en) * 2004-07-02 2006-01-06 Commissariat Energie Atomique DEVICE FOR SECURING COMPONENTS
WO2006013302A1 (en) * 2004-07-02 2006-02-09 Commissariat A L'energie Atomique Device for making secure components
US7705439B2 (en) * 2005-01-25 2010-04-27 Teledyne Technologies Incorporated Destructor integrated circuit chip, interposer electronic device and methods
US20100032776A1 (en) * 2005-01-25 2010-02-11 Teledyne Technologies Incoporated Destructor integrated circuit chip, interposer electronic device and methods
DE102005016294A1 (en) * 2005-04-08 2006-10-19 Infineon Technologies Ag Chip cover for use in smart card, has activator material which is degraded partially after activation of chip surface, where material represents fluorine compound to release hydrogen fluoride from semiconductor chip
US7489013B1 (en) * 2005-10-17 2009-02-10 Teledyne Technologies Incorporated Destructor integrated circuit chip, interposer electronic device and methods
US8399781B1 (en) 2005-10-18 2013-03-19 Teledyne Technologies Incorporated Anti-tamper mesh
US7640658B1 (en) 2005-10-18 2010-01-05 Teledyne Technologies Incorporated Methods for forming an anti-tamper pattern
US7947911B1 (en) 2005-10-18 2011-05-24 Teledyne Technologies Incorporated Anti-tamper mesh
US8240038B1 (en) 2005-10-18 2012-08-14 Teledyne Technologies Incorporated Method for forming an anti-tamper mesh
EP2165346A4 (en) * 2007-06-15 2014-01-15 Spectre Entpr Inc Charge system for destroying chips on a circuit board and method for destroying chips on a circuit board
EP2165346A1 (en) * 2007-06-15 2010-03-24 Spectre Enterprises, Inc. Charge system for destroying chips on a circuit board and method for destroying chips on a circuit board
US9431354B2 (en) 2014-11-06 2016-08-30 International Business Machines Corporation Activating reactions in integrated circuits through electrical discharge
US9991214B2 (en) 2014-11-06 2018-06-05 International Business Machines Corporation Activating reactions in integrated circuits through electrical discharge
US10262955B2 (en) 2014-11-06 2019-04-16 International Business Machines Corporation Activating reactions in integrated circuits through electrical discharge
US10388615B2 (en) 2014-11-06 2019-08-20 International Business Machines Corporation Activating reactions in integrated circuits through electrical discharge
US9812407B2 (en) 2015-09-29 2017-11-07 Honeywell International Inc. Self-destructing electronic device
US9859227B1 (en) 2016-06-30 2018-01-02 International Business Machines Corporation Damaging integrated circuit components
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