US3875413A - Infrared radiation source - Google Patents

Infrared radiation source Download PDF

Info

Publication number
US3875413A
US3875413A US404845A US40484573A US3875413A US 3875413 A US3875413 A US 3875413A US 404845 A US404845 A US 404845A US 40484573 A US40484573 A US 40484573A US 3875413 A US3875413 A US 3875413A
Authority
US
United States
Prior art keywords
substrate
infrared radiation
radiation source
source
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US404845A
Inventor
John A Bridgham
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Priority to US404845A priority Critical patent/US3875413A/en
Priority to GB38849/74A priority patent/GB1480236A/en
Priority to CA208,551A priority patent/CA1014214A/en
Priority to DE2442892A priority patent/DE2442892C3/en
Priority to CH1232074A priority patent/CH585465A5/xx
Priority to FR7433633A priority patent/FR2246978B3/fr
Application granted granted Critical
Publication of US3875413A publication Critical patent/US3875413A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02—Details
    • G01J3/10—Arrangements of light sources specially adapted for spectrometry or colorimetry
    • G01J3/108—Arrangements of light sources specially adapted for spectrometry or colorimetry for measurement in the infrared range
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H05B3/009—Heating devices using lamps heating devices not specially adapted for a particular application
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/011—Heaters using laterally extending conductive material as connecting means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/013—Heaters using resistive films or coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/017—Manufacturing methods or apparatus for heaters
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/032—Heaters specially adapted for heating by radiation heating

Definitions

  • N 404,845 1 PP 0 57 ABSTRACT [52] Us. Cl 250/492 219/553 350/164 A source of infrared radiation is provided which in- 511 int. Cl. ..1-i05b 1/02 cludes a thin film resistive heater high emissivity [58] Field of Search H 250/503 504 492 evaporated onto a substrate. The thin film heater is 219/3521 6 positioned between a pair of thin metal elements on the substrate. The resulting structure provides a well- [56] References Cited defined. mechanically stable source. In one embodiment of the invention, the resistive element is coated x H 387 27 g fv tl PATENTS 50/504 with an antireflecting layer to enhance its emissivity.
  • infrared sources As more small, portable instruments using infrared sources are being designed, it is becoming of importance to have infrared sources of high overall efficiency.
  • Various infrared sources are presently known.
  • One common source is a Nernst glower, which uses a silicon carbide filament. These glowers have been found to be difficult to start-up and operate, while the typical physical configuration does not provide a good point source for applications requiring such.
  • Tungsten in the shape of a coil filament is also used to provide infrared radiation.
  • tungsten coil filaments are not adequate. Because of the physical configuration of the coil, the image does not consist of a solid area of radiation, but rather consists of areas of radiation intermingled with areas in which not radiation is present. The image is said to have a poor fill factor.
  • a system employing a coil filament is very susceptible to errors induced by mechanical movement or jarring of the system. When jarred, the coil filament tends to jiggle resulting in spurious noise in the detected radiation.
  • the tungsten material typically used in coil filaments has a comparatively low emissivity (about 0.l5) in the infrared region. and is therefore not well suited for use as an infrared source.
  • LED light emitting diode
  • the present invention provides a small, well-defined source of infrared radiation which can be easily and efficiently imaged through an optical system.
  • the invention includes a thin film resistive heater of a high emissivity substance such as CIgSI evaporated onto a substrate.
  • the resistive heater is confined to a small area between a pair of metal elements on the substrate.
  • the high emissivity of the thin film heater and the low thermal conductivity of the substrate material each contribute to providing a highly efficient source.
  • FIG. 1 is a radiation source in accordance with an embodiment of the invention.
  • FIG. 2 shows a portion of a light source in accordance with another embodiment of the invention including an antireflecting layer.
  • FIG. 3 illustrates a light source in a package including a reflecting surface.
  • FIG. 1 there is illustrated a substrate 11 of low thermal conductivity, e.g. conductivity in the range 0.02 to 0.08 watt/cmK.
  • a substrate 11 of low thermal conductivity e.g. conductivity in the range 0.02 to 0.08 watt/cmK.
  • Several suitable materials are thin sapphire, Y O and quartz.
  • the dimensions of substrate Il may be chosen in accordance with a desired size of the light source; e.g. operating devices have been built in which the dimensions of substrate 11 are about 0.150 by 0.020 by 0.002 inch.
  • a radiation source area 13 Positioned centrally with respect to the long dimensions of substrate 11 is a radiation source area 13 which comprises a region of a highly resistive. highly emissive material, emissivity greater than about 0.5 being preferred.
  • source area 13 consists of Cr Si evaporated onto substrate 11 to a depth of about l2,u..
  • source area 13 is a 0.02 X 0.02 inch square having a resistance of about IOOIL-In the infrared radiation region of interest, about 4p. wavelength, the emissivity of Cr Si is about 0.5.
  • a pair of metallic conductors 15 which are preferably of a low emissivity relative to that of the Cr Si in the infrared-region. Platinum, which has an emissivity in the infrared of about 0.1 is suitable, but other metals such as gold may also be used.
  • Each metallic conductor 15 includes a portion 17 which overlaps a small area of source 13.
  • a pair of leads 19, of a material such as gold, are bonded to metal layers 15 to serve as input and output leads supplying electrical power to source area 13.
  • leads 19, of a material such as gold are bonded to metal layers 15 to serve as input and output leads supplying electrical power to source area 13.
  • spurious radiation it is desirable that spurious radiation not be emitted from the device, as from the bottom of substrate 11.
  • an additional metal layer 21 is deposited onto the bottom of substrate 11.
  • current leads 19 are connected to a source which provides sufficient current to heat thin film resistive heater 13 to a temperature of about 700C.
  • a current in the range of about 50-70 ma has been found to provide adequate heating.
  • Spurious radiation from metal layer 15 is kept to a minimum by using a substrate which is of very low thermal conductivity, thereby ensuring that only small amounts of heat are conducted away from source 13 to metal plates 15 via substrate 11.
  • the use of low emissivity metals such as platinum for metal plates 15 adjacent to resistive heater 13 further reduces emission from layers 15, so that the region from which radiation is emitted is spatially well defined.
  • FIG. 2 again shows a portion of substrate 11, and a portion of both metal layers 15 including raised portions 17. Also shown is thin film resistive heater l3 positioned adjacent to metal layers 15. There is also illustrated an antireflecting layer 23of a material such as TiO thickness of about 0.44u, which is in contact with resistive heater 13. Antireflecting layer 23 serves to effectively increase the emissivity of the infrared source. Preferably, the material of antireflecting layer 23 is selected so that its index of refraction is approximately equal to the square root ofthe index of refraction of the material of heater 13.
  • FIG. 3 there is illustrated source strip 11 encapsulated in an optical package 25.
  • Package 25 includes a base 27 on which is mounted a reflecting surface 29.
  • Reflecting surface 29 is preferably an eliptical or parabolic reflector of a solid piece of metal such as aluminum.
  • a pair of metal posts 31 extend through base 27 and reflector 29 and are connected to leads 19 to provide electrical power to strip source 10.
  • lnfrared radiation emitted from source area 13 is directed to reflecting surface 29, from which it is reflected out of package 25 to form a magnified image (not shown). It may be seen from this illustration that light emitted from the side of source 13 away from reflector 29 would be directed toward the right in the figure, and thereby degrade the image produced by rays reflected from reflector 29.
  • a metallic surface is deposited on the back (right side in the figure) of substrate 11 to prevent the occurrence of such spurious radiation.
  • package 25 is hermetically sealed to enclose an inert atmosphere such as nitrogen or argon, to prolong the life of the filament.
  • An infrared radiation source comprising:
  • the substrate material is selected from the group consisting of sapphire and Y O and quartz.
  • An infrared radiation source as in claim 2 including an antireflecting layer on the Cr Si layer for increasing the effective emissivity of the heater.
  • An infrared radiation source as in claim 5 including another metal strip on another side of the substrate opposite the side on which the resistive heater is deposited, for preventing spurious radiation from said other side of the substrate.
  • an infrared radiation source as in claim 7 wherein: the housing is of a circular cross section; the reflecting surface is an eliptical mirror; and the substrate and thin film resistive heater are mounted in spaced relation with the reflecting surface.
  • the housing is of a circular cross section; the reflecting surface is a parabolic mirror; and the substrate and the thin film resistive heater are mounted in spaced relation with the reflecting sur-

Abstract

A source of infrared radiation is provided which includes a thin film resistive heater of high emissivity evaporated onto a substrate. The thin film heater is positioned between a pair of thin metal elements on the substrate. The resulting structure provides a well-defined, mechanically stable source. In one embodiment of the invention, the resistive element is coated with an antireflecting layer to enhance its emissivity.

Description

XR 3 9 8 7 5 s 4-13 United States Patent 1 [111 3,875,413 Brid ham A r. l 1975 g P a INFRARED RADIATION SOURCE 3.6941124 9/1972 Buchtam 219/553 Inventor: J n A. Bridgham! a Alto Calif- 3,78l.528 12/1973 SchrcWellus 2l9/553 Assigneel Hewlett-Packard p y P310 Primary Examiner-James W. Lawrence Alto, C allf. Assistant Examiner-C. E. Church O 9, AUUIHC)", Agent, 0" Firm-Ronald Grubman 2] A l. N 404,845 1 PP 0 57 ABSTRACT [52] Us. Cl 250/492 219/553 350/164 A source of infrared radiation is provided which in- 511 int. Cl. ..1-i05b 1/02 cludes a thin film resistive heater high emissivity [58] Field of Search H 250/503 504 492 evaporated onto a substrate. The thin film heater is 219/3521 6 positioned between a pair of thin metal elements on the substrate. The resulting structure provides a well- [56] References Cited defined. mechanically stable source. In one embodiment of the invention, the resistive element is coated x H 387 27 g fv tl PATENTS 50/504 with an antireflecting layer to enhance its emissivity.
6.. 196 21 'ron 3.533.850 10/1970 Tarncja 350/164 9 Claims, 3 Drawing Figures INFRARED RADIATION SOURCE BACKGROUND OF THE INVENTION This invention is concerned generally with radiation sources, and more particularly with a new planar source of infrared radiation.
As more small, portable instruments using infrared sources are being designed, it is becoming of importance to have infrared sources of high overall efficiency. Various infrared sources are presently known. One common source is a Nernst glower, which uses a silicon carbide filament. These glowers have been found to be difficult to start-up and operate, while the typical physical configuration does not provide a good point source for applications requiring such.
Tungsten in the shape of a coil filament is also used to provide infrared radiation. For use in systems which require good imaging and low noise, however, tungsten coil filaments are not adequate. Because of the physical configuration of the coil, the image does not consist of a solid area of radiation, but rather consists of areas of radiation intermingled with areas in which not radiation is present. The image is said to have a poor fill factor. Furthermore, a system employing a coil filament is very susceptible to errors induced by mechanical movement or jarring of the system. When jarred, the coil filament tends to jiggle resulting in spurious noise in the detected radiation. Also, the tungsten material typically used in coil filaments has a comparatively low emissivity (about 0.l5) in the infrared region. and is therefore not well suited for use as an infrared source.
In the prior art. some-of the problems of a coil filament have been avoided by using a ribbon of tungsten as a source. A ribbon, however, does not eliminate the problems of using low emissivity tungsten as an infrared source Furthermore, becauseof the low resistivity of tungsten. it is difficult to provide a small well-defined source with a tungsten ribbon, there being no discontinuity between source and leads. If, however, only a small section of tungsten is used as a source in conjunction with thin wire current leads, most of the electrical power is then dissipated in the leads rather than in the low resistance source, so that the source is very ineffieient.
Another radiation source which is of current interest is the light emitting diode (LED). Present LEDs are very low power devices which are not suitable for all uses.
SUMMARY OF THE INVENTION According to the illustrated preferred embodiment, the present invention provides a small, well-defined source of infrared radiation which can be easily and efficiently imaged through an optical system. The invention includes a thin film resistive heater of a high emissivity substance such as CIgSI evaporated onto a substrate. The resistive heater is confined to a small area between a pair of metal elements on the substrate. The high emissivity of the thin film heater and the low thermal conductivity of the substrate material each contribute to providing a highly efficient source.
The resistive heater of high emissivity is positioned between, and immediately adjacent to, a pair of metal elements of low resistivity and emissivity to provide a well-defined source which is particularly suited to imaging with mirror optics. The source is planar, and may DESCRIPTION OF THE DRAWINGS FIG. 1 is a radiation source in accordance with an embodiment of the invention.
FIG. 2 shows a portion of a light source in accordance with another embodiment of the invention including an antireflecting layer.
FIG. 3 illustrates a light source in a package including a reflecting surface.
DESCRIPTION OF THE INVENTION In FIG. 1 there is illustrated a substrate 11 of low thermal conductivity, e.g. conductivity in the range 0.02 to 0.08 watt/cmK. Several suitable materials are thin sapphire, Y O and quartz. The dimensions of substrate Il may be chosen in accordance with a desired size of the light source; e.g. operating devices have been built in which the dimensions of substrate 11 are about 0.150 by 0.020 by 0.002 inch. Positioned centrally with respect to the long dimensions of substrate 11 is a radiation source area 13 which comprises a region of a highly resistive. highly emissive material, emissivity greater than about 0.5 being preferred. Preferably, source area 13 consists of Cr Si evaporated onto substrate 11 to a depth of about l2,u.. In the illustrated embodiment, source area 13 is a 0.02 X 0.02 inch square having a resistance of about IOOIL-In the infrared radiation region of interest, about 4p. wavelength, the emissivity of Cr Si is about 0.5. Immediately adjacent to both sides of source area 13 are a pair of metallic conductors 15 which are preferably of a low emissivity relative to that of the Cr Si in the infrared-region. Platinum, which has an emissivity in the infrared of about 0.1 is suitable, but other metals such as gold may also be used. Each metallic conductor 15 includes a portion 17 which overlaps a small area of source 13. This configuration helps to provide a well defined source region. A pair of leads 19, of a material such as gold, are bonded to metal layers 15 to serve as input and output leads supplying electrical power to source area 13. As will be explained further below, it is desirable that spurious radiation not be emitted from the device, as from the bottom of substrate 11. To prevent spurious radiation from being emitted, an additional metal layer 21 is deposited onto the bottom of substrate 11.
In operation. current leads 19 are connected to a source which provides sufficient current to heat thin film resistive heater 13 to a temperature of about 700C. For the 1000 square of Cr- Si described above, a current in the range of about 50-70 ma has been found to provide adequate heating. Spurious radiation from metal layer 15 is kept to a minimum by using a substrate which is of very low thermal conductivity, thereby ensuring that only small amounts of heat are conducted away from source 13 to metal plates 15 via substrate 11. Additionally, the use of low emissivity metals such as platinum for metal plates 15 adjacent to resistive heater 13 further reduces emission from layers 15, so that the region from which radiation is emitted is spatially well defined.
FIG. 2 again shows a portion of substrate 11, and a portion of both metal layers 15 including raised portions 17. Also shown is thin film resistive heater l3 positioned adjacent to metal layers 15. There is also illustrated an antireflecting layer 23of a material such as TiO thickness of about 0.44u, which is in contact with resistive heater 13. Antireflecting layer 23 serves to effectively increase the emissivity of the infrared source. Preferably, the material of antireflecting layer 23 is selected so that its index of refraction is approximately equal to the square root ofthe index of refraction of the material of heater 13.
in FIG. 3, there is illustrated source strip 11 encapsulated in an optical package 25. Package 25 includes a base 27 on which is mounted a reflecting surface 29. Reflecting surface 29 is preferably an eliptical or parabolic reflector of a solid piece of metal such as aluminum. A pair of metal posts 31 extend through base 27 and reflector 29 and are connected to leads 19 to provide electrical power to strip source 10. lnfrared radiation emitted from source area 13 is directed to reflecting surface 29, from which it is reflected out of package 25 to form a magnified image (not shown). It may be seen from this illustration that light emitted from the side of source 13 away from reflector 29 would be directed toward the right in the figure, and thereby degrade the image produced by rays reflected from reflector 29. As was described above in connection with FIG. 1. a metallic surface is deposited on the back (right side in the figure) of substrate 11 to prevent the occurrence of such spurious radiation. Preferably, package 25 is hermetically sealed to enclose an inert atmosphere such as nitrogen or argon, to prolong the life of the filament.
1 claim:
1. An infrared radiation source comprising:
a substrate:
a pair of metal strips of emissivity less than about 0.2
in the infrared region positioned on one side of the substrate;
the substrate material is selected from the group consisting of sapphire and Y O and quartz.
4. An infrared radiation source as in claim 2 including an antireflecting layer on the Cr Si layer for increasing the effective emissivity of the heater.
5. An infrared radiation source as in claim 4 wherein the antireflecting layer is of TiO;.
6. An infrared radiation source as in claim 5 including another metal strip on another side of the substrate opposite the side on which the resistive heater is deposited, for preventing spurious radiation from said other side of the substrate.
7. An infrared radiation source as in claim 6 wherein the substrate is mounted in a housing including a base and a reflecting surface mounted on the base. the reflecting surface for reflecting and focusing infrared radiation from the thin film resistive heater.
8. An infrared radiation source as in claim 7 wherein: the housing is of a circular cross section; the reflecting surface is an eliptical mirror; and the substrate and thin film resistive heater are mounted in spaced relation with the reflecting surface. 9. An infrared radiation source as in claim 7 wherein: the housing is of a circular cross section; the reflecting surface is a parabolic mirror; and the substrate and the thin film resistive heater are mounted in spaced relation with the reflecting sur-

Claims (9)

1. An infrared radiation source comprising: a substrate; a pair of metal strips of emissivity less than about 0.2 in the infrared region positioned on one side of the substrate; a thin film resistive heater of emissivity greater than about 0.5 in the infrared region positioned on the substrate in between the pair of metal strips to serve as a radiation source area bounded by the metal strips; and input and output leads electrically interconnected with the pair of metal strips for conducting an electrical current through the source.
2. An infrared radiation source as in claim 1 wherein the thin film resistive heater comprises a layer of Cr3Si deposited onto the substrate.
3. An infrared radiation source as in claim 2 wherein the substrate material is selected from the group consisting of sapphire and Y2O3 and quartz.
4. An infrared radiation source as in claim 2 including an antireflecting layer on the Cr3Si layer for increasing the effective emissivity of the heater.
5. An infrared radiation source as in claim 4 wherein the antireflecting layer is of TiO2.
6. An infrared radiation source as in claim 5 including another metal strip on another side of the substrate opposite the side on which the resistive heater is deposited, for preventing spurious radiation from said other side of the substrate.
7. An infrared radiation source as in claim 6 wherein the substrate is mounted in a housing including a base and a reflecting surface mounted on the base, the reflecting surface for reflecting and focusing infrared radiation from the thin film resistive heater.
8. An infrared radiation source as in claim 7 wherein: the housing is of a circular cross section; the reflecting surface is an eliptical mirror; and the substrate and thin film resistive heater are mounted in spaced relation with the reflecting surface.
9. An infrared radiation source as in claim 7 wherein: the housing is of a circular cross section; the reflecting surface is a parabolic mirror; and the substrate and the thin film resistive heater are mounted in spaced relation with the reflecting surface.
US404845A 1973-10-09 1973-10-09 Infrared radiation source Expired - Lifetime US3875413A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US404845A US3875413A (en) 1973-10-09 1973-10-09 Infrared radiation source
GB38849/74A GB1480236A (en) 1973-10-09 1974-09-05 Infrared radiation source
CA208,551A CA1014214A (en) 1973-10-09 1974-09-05 Infrared radiation source
DE2442892A DE2442892C3 (en) 1973-10-09 1974-09-07 Infrared radiation source
CH1232074A CH585465A5 (en) 1973-10-09 1974-09-10
FR7433633A FR2246978B3 (en) 1973-10-09 1974-10-07

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US404845A US3875413A (en) 1973-10-09 1973-10-09 Infrared radiation source

Publications (1)

Publication Number Publication Date
US3875413A true US3875413A (en) 1975-04-01

Family

ID=23601283

Family Applications (1)

Application Number Title Priority Date Filing Date
US404845A Expired - Lifetime US3875413A (en) 1973-10-09 1973-10-09 Infrared radiation source

Country Status (6)

Country Link
US (1) US3875413A (en)
CA (1) CA1014214A (en)
CH (1) CH585465A5 (en)
DE (1) DE2442892C3 (en)
FR (1) FR2246978B3 (en)
GB (1) GB1480236A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1983003001A1 (en) * 1982-02-22 1983-09-01 Per-Erik Nordal Infrared radiation source arrangement
EP0177724A1 (en) * 1984-10-12 1986-04-16 Drägerwerk Aktiengesellschaft Infrared radiator
US4899053A (en) * 1987-10-21 1990-02-06 Criticare Systems, Inc. Solid state non-dispersive IR analyzer using electrical current-modulated microsources
US5062146A (en) * 1988-11-08 1991-10-29 Nkk Corporation Infrared radiator
US5128514A (en) * 1987-07-31 1992-07-07 Siemens Aktiengesellschaft Black radiator for use as an emitter in calibratable gas sensors
FR2680914A1 (en) * 1991-08-28 1993-03-05 Realisations Electronique Et Infrared source
US5369277A (en) * 1990-05-23 1994-11-29 Ntc Technology, Inc. Infrared source
US5838016A (en) * 1995-08-03 1998-11-17 Johnson; Edward A. Infrared radiation filament and method of manufacture
AT404923B (en) * 1995-09-05 1999-03-25 Vae Ag TEST RADIATOR FOR CALIBRATING INFRARED DETECTORS
US6169275B1 (en) * 1998-06-05 2001-01-02 Ngk Spark Plug Co, Ltd. Ceramic heater and oxygen sensor using the same
US6525814B1 (en) 1998-10-23 2003-02-25 Mission Research Corporation Apparatus and method for producing a spectrally variable radiation source and systems including same
US20050274714A1 (en) * 2004-06-14 2005-12-15 Hongy Lin In-line heater for use in semiconductor wet chemical processing and method of manufacturing the same
EP1653778A1 (en) * 2004-10-26 2006-05-03 Cheng-Ping Lin Film heating element having automatic temperature stabilisation function
US7081602B1 (en) * 2000-02-01 2006-07-25 Trebor International, Inc. Fail-safe, resistive-film, immersion heater
US8558201B2 (en) 2009-03-13 2013-10-15 Siemens Aktiengesellschaft Infrared radiator arrangement for a gas analysis device
US20140339218A1 (en) * 2011-12-01 2014-11-20 Koninklijke Philips N.V. Structural design and process to improve the temperature modulation and power consumption of an ir emitter

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58127020A (en) * 1982-01-21 1983-07-28 Matsushita Electric Ind Co Ltd Panel heater
AT380372B (en) * 1984-07-13 1986-05-12 Guenther Ing Roesch ELECTRIC HEATING UNIT
JPS61202057U (en) * 1985-06-06 1986-12-18
DE3615259A1 (en) * 1986-05-06 1987-11-12 Krieg Gunther Method and system for the continuous determination of the concentrations of molecular compounds in liquids and gases
ATE125095T1 (en) * 1991-01-16 1995-07-15 Friedrich Hoffmann INFRARED HEATER.
DE4241617C2 (en) * 1992-12-10 1996-02-08 Deutsche Forsch Luft Raumfahrt Black spotlight
DE102005006190A1 (en) * 2005-02-10 2006-08-24 Siemens Ag Optical radiation device with radiation source providing radiation in visible wavelength region and non-visible heat radiation, used in illumination industry has metal oxide reflector giving radiation closer to black body radiation
EP2261618A1 (en) * 2009-06-08 2010-12-15 Leister Process Technologies Miniature infrared light source

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3316387A (en) * 1963-11-26 1967-04-25 North American Aviation Inc Electric lamp having directly heated sheet radiator
US3533850A (en) * 1965-10-13 1970-10-13 Westinghouse Electric Corp Antireflective coatings for solar cells
US3694624A (en) * 1969-07-16 1972-09-26 Beckman Instruments Gmbh Infrared radiator arrangement
US3781528A (en) * 1972-05-30 1973-12-25 Bulten Kanthal Ab Heat resistant,electrical insulating heating unit

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US642414A (en) * 1897-10-08 1900-01-30 Josef Kirchner Manufacture of electrical resistances.
US2879431A (en) * 1956-09-04 1959-03-24 Sylvania Electric Prod Lamp
CA952628A (en) * 1963-12-16 1974-08-06 David A. Maxwell Semiconductor structure and method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3316387A (en) * 1963-11-26 1967-04-25 North American Aviation Inc Electric lamp having directly heated sheet radiator
US3533850A (en) * 1965-10-13 1970-10-13 Westinghouse Electric Corp Antireflective coatings for solar cells
US3694624A (en) * 1969-07-16 1972-09-26 Beckman Instruments Gmbh Infrared radiator arrangement
US3781528A (en) * 1972-05-30 1973-12-25 Bulten Kanthal Ab Heat resistant,electrical insulating heating unit

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4620104A (en) * 1982-02-22 1986-10-28 Nordal Per Erik Infrared radiation source arrangement
WO1983003001A1 (en) * 1982-02-22 1983-09-01 Per-Erik Nordal Infrared radiation source arrangement
EP0177724A1 (en) * 1984-10-12 1986-04-16 Drägerwerk Aktiengesellschaft Infrared radiator
US4644141A (en) * 1984-10-12 1987-02-17 Dragerwerk Ag Infrared radiator
US5128514A (en) * 1987-07-31 1992-07-07 Siemens Aktiengesellschaft Black radiator for use as an emitter in calibratable gas sensors
US4899053A (en) * 1987-10-21 1990-02-06 Criticare Systems, Inc. Solid state non-dispersive IR analyzer using electrical current-modulated microsources
US5062146A (en) * 1988-11-08 1991-10-29 Nkk Corporation Infrared radiator
US5369277A (en) * 1990-05-23 1994-11-29 Ntc Technology, Inc. Infrared source
FR2680914A1 (en) * 1991-08-28 1993-03-05 Realisations Electronique Et Infrared source
US6249005B1 (en) 1995-08-03 2001-06-19 Ion Optics, Inc. Infrared radiation filament and method of manufacture
US5838016A (en) * 1995-08-03 1998-11-17 Johnson; Edward A. Infrared radiation filament and method of manufacture
AT404923B (en) * 1995-09-05 1999-03-25 Vae Ag TEST RADIATOR FOR CALIBRATING INFRARED DETECTORS
US6169275B1 (en) * 1998-06-05 2001-01-02 Ngk Spark Plug Co, Ltd. Ceramic heater and oxygen sensor using the same
US6525814B1 (en) 1998-10-23 2003-02-25 Mission Research Corporation Apparatus and method for producing a spectrally variable radiation source and systems including same
US7081602B1 (en) * 2000-02-01 2006-07-25 Trebor International, Inc. Fail-safe, resistive-film, immersion heater
US20050274714A1 (en) * 2004-06-14 2005-12-15 Hongy Lin In-line heater for use in semiconductor wet chemical processing and method of manufacturing the same
US7164104B2 (en) * 2004-06-14 2007-01-16 Watlow Electric Manufacturing Company In-line heater for use in semiconductor wet chemical processing and method of manufacturing the same
EP1653778A1 (en) * 2004-10-26 2006-05-03 Cheng-Ping Lin Film heating element having automatic temperature stabilisation function
US8558201B2 (en) 2009-03-13 2013-10-15 Siemens Aktiengesellschaft Infrared radiator arrangement for a gas analysis device
US20140339218A1 (en) * 2011-12-01 2014-11-20 Koninklijke Philips N.V. Structural design and process to improve the temperature modulation and power consumption of an ir emitter
US10952283B2 (en) * 2011-12-01 2021-03-16 Koninklijke Philips N.V. Structural design and process to improve the temperature modulation and power consumption of an IR emitter

Also Published As

Publication number Publication date
FR2246978B3 (en) 1976-12-10
DE2442892A1 (en) 1975-04-10
FR2246978A1 (en) 1975-05-02
GB1480236A (en) 1977-07-20
CH585465A5 (en) 1977-02-28
CA1014214A (en) 1977-07-19
DE2442892C3 (en) 1982-11-25
DE2442892B2 (en) 1979-05-23

Similar Documents

Publication Publication Date Title
US3875413A (en) Infrared radiation source
US5479069A (en) Planar fluorescent lamp with metal body and serpentine channel
US7964883B2 (en) Light emitting diode package assembly that emulates the light pattern produced by an incandescent filament bulb
JP6131293B2 (en) X-ray tube electron source
KR101227582B1 (en) Led array
US20040012958A1 (en) Light emitting device comprising led chip
US4792728A (en) Cathodoluminescent garnet lamp
US10670192B2 (en) Lighting apparatus
JP2000261039A (en) Light source device
GB2052140A (en) Semiconductor laser device
JP2005086051A (en) Light emitting device
JP3649939B2 (en) Line light source device and manufacturing method thereof
US3973155A (en) Incandescent source of visible radiations
JPS61501802A (en) Infrared panel emitter and its manufacturing method
US20060267032A1 (en) Light-emitting diode arrangement
JP2554741B2 (en) Semiconductor laser array device
WO2007005003A1 (en) Light emitting diode package assembly that emulates the light pattern produced by an incandescent filament bulb
JP3982635B2 (en) Reflective light emitting diode
JP4557613B2 (en) Light emitting element storage package, light emitting device, and lighting device
CN109565907B (en) Micro heating conductor
JP6899971B1 (en) Heat dissipation structure and its manufacturing method, vacuum valve
RU81599U1 (en) LED LIGHT LAMP
JP2013030598A (en) Heat generation device
JP3656236B2 (en) Light emitting diode and light emitting diode lamp
JP3101434B2 (en) Semiconductor laser device