US4301462A - Light activated silicon switch with etched channel in cathode base and anode emitter communicating with cladded optical fiber - Google Patents

Light activated silicon switch with etched channel in cathode base and anode emitter communicating with cladded optical fiber Download PDF

Info

Publication number
US4301462A
US4301462A US05/930,762 US93076278A US4301462A US 4301462 A US4301462 A US 4301462A US 93076278 A US93076278 A US 93076278A US 4301462 A US4301462 A US 4301462A
Authority
US
United States
Prior art keywords
cathode
light
anode
channel
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US05/930,762
Inventor
Lewis R. Lowry
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Priority to US05/930,762 priority Critical patent/US4301462A/en
Priority to IN746/CAL/79A priority patent/IN152332B/en
Priority to CA332,482A priority patent/CA1130475A/en
Priority to BR7904830A priority patent/BR7904830A/en
Priority to BE0/196546A priority patent/BE878002A/en
Priority to JP9816779A priority patent/JPS5522897A/en
Priority to FR7919839A priority patent/FR2432771A1/en
Priority to DE19792931649 priority patent/DE2931649A1/en
Priority to GB7927174A priority patent/GB2027991B/en
Application granted granted Critical
Publication of US4301462A publication Critical patent/US4301462A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor
    • H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor the device being a bipolar phototransistor
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor the device being a photothyristor
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/30—Optical coupling means for use between fibre and thin-film device
    • G02B6/305—Optical coupling means for use between fibre and thin-film device and having an integrated mode-size expanding section, e.g. tapered waveguide
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device

Definitions

  • This invention relates generally to a semiconductor device and particularly to a four region light activated silicon switch (LASS).
  • LASS region light activated silicon switch
  • the light is introduced through a central aperture, or one or more rectangular slots arranged in the cathode electrode.
  • the light is introduced into a relatively compact area. It is characteristic of the LASS that current conduction spreads slowly from the region initially turned on as determined by the area exposed to light. Thus, it takes a relatively long time for conduction to spread from the turned on area to cover the entire useful area of the device.
  • the shortest electrical path is in a direction toward the aperture in the cathode electrode, but obviously, since the aperture presents no electrical contact, the path to the cathode electrode must be longer.
  • This high resistance causes rapid heating at the beginning of current flow, and limits the amount of current that can be tolerated without device failure.
  • the cathode electrode which also serves as a heat sink.
  • thermal considerations place an upper limit on the starting current capacity for the device.
  • An improved light activated silicon switch comprising a silicon wafer with cathode-emitter, cathode-base, anode-base and anode-emitter regions.
  • a plurality of optical targets are provided, each target comprising a channel cut in the cathode-base region.
  • a plurality of light transmitting conduits are provided, each conduit having two end portions and comprising a central core of light transmitting material surrounded by a cladding, the cladding being removed at one end portion for optically communicating with said channel, the other end portion being adapted to receive a light trigger from a source.
  • Anode and cathode electrodes are affixed to said anode and cathode emitter regions.
  • the optical targets, 1 to 10 in number, are V-shaped channels which occupy less than 25% of the surface area of the cathode-base region.
  • the central core is of a material having a higher index of refraction than the cladding, so that the transmitted light is confined to the central core until it reaches the area of the target.
  • the light is introduced into both sides of the silicon wafer, a plurality of additional optical targets, 1 to 10 in number, being arranged as V-shaped channels in the anode-emitter region.
  • a plurality of identical light transmitting conduits are also provided, each conduit having two end portions, one end portion optically communicating with a channel, the other end portion being adapted to receive the light trigger, respectively.
  • FIG. 1 is a top plan view of the light activated switch (LASS) with the metalization removed in order to show the light transmitting conduits;
  • LASS light activated switch
  • FIG. 2 is a cross sectional view of the LASS taken along the line II--II of FIG. 1, with the metalization shown in place;
  • FIG. 3 is a cross sectional view showing a light transmitting conduit optically connected with an optical target in the silicon wafer of the LASS;
  • FIG. 4 is an isometric view showing a target channel cut in the cathode base region and, showing three of the four (111) planes after etching;
  • FIG. 5 is a cross sectional view of the LASS in accordance with a second embodiment of the invention.
  • FIG. 6 is a cross section view of the LASS in accordance with a second embodiment of the invention, depicting light transmitting conduits optically connected with target areas in both the cathode-base and anode emitter regions.
  • a light activated silicon switch is indicated generally at 10.
  • a silicon wafer identified generally at 12 comprises N and P type conductivity regions in N-P-N-P sequence as shown: cathode-emitter (N+) 14, cathode-base (P) 16, anode-base (N) 18, and anode-emitter (P) 20.
  • the silicon wafer 12 may be manufactured by any suitable method known to those skilled in the art as for example alloying, diffusion and epitaxial growth are all potentially useful methods. Diffusion and epitaxial growth are the most widely used methods.
  • acceptor atoms are diffused on both sides of the N-type wafer to provide a P-N-P structure. Then donor atoms are diffused into one surface to give the required N-P-N-P configuration. The thicknesses of the various regions are controlled to provide the required voltage and triggering characteristics.
  • the structure of the silicon wafer is well known in the art: see Thyristor Physics by Adolph B Anlagen published by Springer-Verlag New York 1976 at pages 7-8.
  • the LASS has three P-N junctions identified as J 1 , J 2 , and J 3 .
  • the depletion layer is indicated at 24.
  • the depth of this layer is a function of the voltage conditions and the degree of doping.
  • FIG. 1 A number of targets FIG. 1: 26, 28, 30 are prepared in the cathode-base region 16 in the region of a cathode shunt as 32 (FIG. 3). In the interests of simplicity only three targets are shown in FIG. 1 but in the practical embodiment there will be 1-10 or more, but covering less than 25% of the surface area of the cathode base region 16.
  • the target such as 26 is produced by an etchant comprising ethylenediamine 35.1 mole percent, pyrocatechal 3.7 mole percent, and water 61.2 mole percent.
  • This etchant is to rapidly remove silicon material until a particular crystal plane surface is exposed.
  • the etchant is used until a (111) crystallographic plane is exposed.
  • Such (111) planes are so disposed in the silicon crystal that etching a (100) oriented silicon surface produces grooves of V-shaped cross section.
  • the V-target 26 is approximately 10-25 microns in depth (well removed from the depletion layer 24) and 100 mils long.
  • the usual thickness of the cathode base region 16 is between 50 and 75 ⁇ meters.
  • a metallic layer 34 of aluminum or an alloy of titanium, paladium and silver about 5 ⁇ meters thick is plated over the cathode emitter region 14, the plating extending for about 3 microns into the target 26 such as shown in FIG. 3.
  • the purpose of this plating extension is to insure that there is electrical contact up to the edge of the target 26.
  • Light transmitting conduits indicated generally at FIG. 1: 36, 38, 40 are arranged to contact the targets 26, 28 and 30 respectively.
  • the light transmitting conduit 36 comprises a light transmissive core 42, covered by a cladding 44, the cladding being suitably removed at the target where it is desired to deliver the light.
  • the core 42 is of flint glass having an index of refraction of 1.6
  • the cladding is silicon dioxide.
  • the silicon dioxide thermally grown, has in index of refraction of 1.42-1.46.
  • the silicon wafer typically has an index of refraction of 3.5.
  • the thickness of the light transmitting conduit 36 is approximately 0.25 ⁇ meters.
  • One end portion of the light transmitting conduits 36, 38 and 40 terminates at the target area 26, 28, 30 respectively, while the other end portion terminates in a yoke 46 for receiving a light trigger.
  • a yoke 46 Overlying the yoke 46 is an optical system indicated generally at 48 for delivering light from a light trigger source (not shown), to the light transmitting conduits 36, 38 and 40, from whence it will be delivered to the targets areas 26, 28, 30.
  • the cladding 44 is appropriately removed from the conduit 36 to permit light to enter the cathode-base region 16.
  • Optical system 48 is here illustrated as a prism which reflects the light rays into the light transmitting conduits.
  • a metallic layer 50 about 50 ⁇ meters thick is plated over the conduits 36, 38, 40, making electrical contact with the cathode electrode 34, but not covering the optical system 48.
  • the layer 50 is of copper, nickel or silver.
  • passivation for the LASS is identified at 52.
  • the passivation material is an organic silicon resin used to prevent leakage currents on the surface of the silicon wafer, and also to prevent a spurious conductive path from developing between the anode and cathode electrodes.
  • the light trigger source may be any optical driver which produces light having a wave length of about 1.06 meters. The limits for the light source are in the wave length range approximately 1.00 to 1.10 ⁇ meters. If the wave length is longer than 1.14 ⁇ meters, the light is not absorbed in the silicon wafer.
  • the wave length is shorter than about 1.0 ⁇ meters it does not penetrate well into the silicon wafer.
  • the light source is neodymium:yttrium aluminum garnet (Nd:YAG) laser.
  • the laser source may be beamed directly at the optical system 48 or it may be delivered to the optical system 48 by means of optical fibers or mirrors of a combination of both.
  • the LASS 10 is arranged so that a light trigger source emits light which is received by the optical system 48 and transmitted to the light transmitting conduits i.e. 36, 38 and 40 from where it then enters the cathode-base region 16 at the target areas 26, 28, 30.
  • the light will enter the silicon ⁇ 23° from the normal N 1 to the sides of the V channel 26, nominally at 55° off the normal N 2 to the original surface, giving penetration of light under the metallized layer 34.
  • anode to cathode conduction takes place in the place indicated at 58, a highly desired consequence since this is a low resistance path and consequently higher starting currents can be tolerated.
  • light is introduced to both sides of the silicon wafer 12. Since the light which initially enters the silicon wafer 12 is depleted exponentially, as a function of the depth of penetration, the introduction of light from the anode-emitter region 20 will increase the available light in the portions of the regions where it would otherwise be weakened; this dual triggering will insure faster turn on, and more efficient utilization of the available light in many applications.
  • FIGS. 5 and 6 where the parts are identical to those in the FIGS. 1-4 embodiment.
  • an equal number of targets i.e. 1 to 10 or more, are prepared in the anode-emitter region 20, the area occupied by all of these targets covering less than 25% of the surface area of the anode-emitter region 20.
  • the V-shaped targets is shown at 58. These targets are etched in the silicon wafer 12 exactly as described in connection with FIG. 4.
  • a light transmitting conduit 60 is arranged to contact the target 58.
  • the light transmitting conduit 60 comprises a light transmissive core 62, covered by a cladding 64, the cladding 64 being suitably removed at the end portions respectively, to receive the light trigger and deliver the light at the target 58.
  • the materials for the core 62 and cladding 64 are the same as their counterparts in FIGS. 1-4.
  • a metallic covering 68 of molybdenum is formed over the metallic layer 66 as well as the light transmitting conduits such as 62.
  • a plurality of the light transmitting conduits such as 60 are arranged in a yoke which optically communicates with a light prism indicated generally at 70.
  • the light source laser 72
  • the mirror 74 is apertured, so that the laser beam which strikes it is deflected to mirror 76 and then to prism 70.
  • the apertured mirror 74 also reflects the laser beam to the prism 48 as indicated by the dashed lines (unnumbered).

Abstract

A light activated silicon switch (LASS) is disclosed in which light is transmitted from a light trigger source to target areas prepared in the cathode-base and anode-emitter regions of the silicon wafer. These target areas are V-shaped channels etched in the silicon wafer. Light transmitting conduits, each consisting of a central core of light transmissive material, with an outer cladding, are arranged to transmit the light energy to the respective target areas. The cladding is removed at one end of each conduit for optically coupling the light to the proximate target area, while the other end of the conduit is adapted to receive a light trigger signal of appropriate wave length.

Description

CROSS REFERENCE TO RELATED APPLICATION
See the copending application for "Improved Light Activated Silicon Switch", Ser. No. 932,992 now U.S. Pat. No. 4,186,409 (W.E. 47,701) filed on Aug. 11, 1978 in the name of Paul G. McMullin and assigned to the same assignee as the present invention.
BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention relates generally to a semiconductor device and particularly to a four region light activated silicon switch (LASS).
2. Description of the Prior Art
In order to actuate a LASS, a large amount of light must be delivered to the proper regions within the wafer of semiconductor material comprising the semiconductor device. To accomplish this it has been the practice to direct a beam of light on to at least one surface of the silicon wafer. Typically, the beam is sent in a perpendicular direction to the wafer surface or at Brewster's angle in order to minimize the surface reflection loss.
There are some rather severe disadvantages with these prior art techniques for light coupling to the LASS. Typically, the light is introduced through a central aperture, or one or more rectangular slots arranged in the cathode electrode. Thus the light is introduced into a relatively compact area. It is characteristic of the LASS that current conduction spreads slowly from the region initially turned on as determined by the area exposed to light. Thus, it takes a relatively long time for conduction to spread from the turned on area to cover the entire useful area of the device.
From the illuminated or turned on area, the shortest electrical path is in a direction toward the aperture in the cathode electrode, but obviously, since the aperture presents no electrical contact, the path to the cathode electrode must be longer. Thus much of the initial current passes through long, relatively high resistance paths in the silicon before it can enter the metal cathode electrode or contact surrounding the aperture. This high resistance causes rapid heating at the beginning of current flow, and limits the amount of current that can be tolerated without device failure.
Further, with the single aperture, or the one or more rectangular slots in the cathode electrode, the heat generated in the silicon wafer in the area where the light impinges must seek a longer thermal path to the cathode electrode surrounding in the aperture. There is of course still a thermal path to an anode electrode which also serves as a heat sink. As a result, thermal considerations place an upper limit on the starting current capacity for the device.
A typical prior art device is described in British Pat. No. 1,254,634 for "Improved Thyristor Arrangement" invented by Boksjo et al. In this patent the thyristor is turned on by a controlled illumination which is applied normal to the semiconductor body through windows arranged in both the anode and cathode sides of the LASS.
SUMMARY OF THE INVENTION
An improved light activated silicon switch is provided comprising a silicon wafer with cathode-emitter, cathode-base, anode-base and anode-emitter regions. A plurality of optical targets are provided, each target comprising a channel cut in the cathode-base region. A plurality of light transmitting conduits are provided, each conduit having two end portions and comprising a central core of light transmitting material surrounded by a cladding, the cladding being removed at one end portion for optically communicating with said channel, the other end portion being adapted to receive a light trigger from a source. Anode and cathode electrodes are affixed to said anode and cathode emitter regions.
The optical targets, 1 to 10 in number, are V-shaped channels which occupy less than 25% of the surface area of the cathode-base region.
The central core is of a material having a higher index of refraction than the cladding, so that the transmitted light is confined to the central core until it reaches the area of the target.
In a second embodiment, the light is introduced into both sides of the silicon wafer, a plurality of additional optical targets, 1 to 10 in number, being arranged as V-shaped channels in the anode-emitter region. A plurality of identical light transmitting conduits are also provided, each conduit having two end portions, one end portion optically communicating with a channel, the other end portion being adapted to receive the light trigger, respectively.
DESCRIPTION OF THE DRAWINGS
FIG. 1 is a top plan view of the light activated switch (LASS) with the metalization removed in order to show the light transmitting conduits;
FIG. 2 is a cross sectional view of the LASS taken along the line II--II of FIG. 1, with the metalization shown in place;
FIG. 3 is a cross sectional view showing a light transmitting conduit optically connected with an optical target in the silicon wafer of the LASS;
FIG. 4 is an isometric view showing a target channel cut in the cathode base region and, showing three of the four (111) planes after etching;
FIG. 5 is a cross sectional view of the LASS in accordance with a second embodiment of the invention; and
FIG. 6 is a cross section view of the LASS in accordance with a second embodiment of the invention, depicting light transmitting conduits optically connected with target areas in both the cathode-base and anode emitter regions.
DESCRIPTION OF THE PREFERRED EMBODIMENT
Referring now to FIGS. 1, 2 and 3, a light activated silicon switch (LASS) is indicated generally at 10. As best shown in FIG. 3, a silicon wafer identified generally at 12, comprises N and P type conductivity regions in N-P-N-P sequence as shown: cathode-emitter (N+) 14, cathode-base (P) 16, anode-base (N) 18, and anode-emitter (P) 20. The silicon wafer 12 may be manufactured by any suitable method known to those skilled in the art as for example alloying, diffusion and epitaxial growth are all potentially useful methods. Diffusion and epitaxial growth are the most widely used methods. Briefly, in the diffusion process starting with an N type wafer, acceptor atoms are diffused on both sides of the N-type wafer to provide a P-N-P structure. Then donor atoms are diffused into one surface to give the required N-P-N-P configuration. The thicknesses of the various regions are controlled to provide the required voltage and triggering characteristics. The structure of the silicon wafer is well known in the art: see Thyristor Physics by Adolph Blicher published by Springer-Verlag New York 1976 at pages 7-8. A metallic member 22 of for example molybdenum, which forms an anode electrode for the LASS device, is affixed to the anode emitter region 20. The LASS has three P-N junctions identified as J1, J2, and J3. When voltage is applied in the forward blocking direction the depletion layer is indicated at 24. The depth of this layer is a function of the voltage conditions and the degree of doping.
A number of targets FIG. 1: 26, 28, 30 are prepared in the cathode-base region 16 in the region of a cathode shunt as 32 (FIG. 3). In the interests of simplicity only three targets are shown in FIG. 1 but in the practical embodiment there will be 1-10 or more, but covering less than 25% of the surface area of the cathode base region 16.
As best shown in FIG. 4, the target such as 26 is produced by an etchant comprising ethylenediamine 35.1 mole percent, pyrocatechal 3.7 mole percent, and water 61.2 mole percent. The action of this etchant is to rapidly remove silicon material until a particular crystal plane surface is exposed. Specifically, the etchant is used until a (111) crystallographic plane is exposed. Such (111) planes are so disposed in the silicon crystal that etching a (100) oriented silicon surface produces grooves of V-shaped cross section. The V-target 26 is approximately 10-25 microns in depth (well removed from the depletion layer 24) and 100 mils long. The usual thickness of the cathode base region 16 is between 50 and 75 μmeters.
A metallic layer 34 of aluminum or an alloy of titanium, paladium and silver about 5 μmeters thick is plated over the cathode emitter region 14, the plating extending for about 3 microns into the target 26 such as shown in FIG. 3. The purpose of this plating extension is to insure that there is electrical contact up to the edge of the target 26.
Light transmitting conduits indicated generally at FIG. 1: 36, 38, 40 are arranged to contact the targets 26, 28 and 30 respectively. As shown in FIG. 3, the light transmitting conduit 36 comprises a light transmissive core 42, covered by a cladding 44, the cladding being suitably removed at the target where it is desired to deliver the light. Advantageously the core 42 is of flint glass having an index of refraction of 1.6, while the cladding is silicon dioxide. The silicon dioxide, thermally grown, has in index of refraction of 1.42-1.46. The silicon wafer typically has an index of refraction of 3.5. The thickness of the light transmitting conduit 36 is approximately 0.25 μmeters.
One end portion of the light transmitting conduits 36, 38 and 40 terminates at the target area 26, 28, 30 respectively, while the other end portion terminates in a yoke 46 for receiving a light trigger. Overlying the yoke 46 is an optical system indicated generally at 48 for delivering light from a light trigger source (not shown), to the light transmitting conduits 36, 38 and 40, from whence it will be delivered to the targets areas 26, 28, 30. The cladding 44 is appropriately removed from the conduit 36 to permit light to enter the cathode-base region 16. Optical system 48 is here illustrated as a prism which reflects the light rays into the light transmitting conduits. A metallic layer 50 about 50 μmeters thick is plated over the conduits 36, 38, 40, making electrical contact with the cathode electrode 34, but not covering the optical system 48. Typically the layer 50 is of copper, nickel or silver.
Completing the description of the device, passivation for the LASS is identified at 52. The passivation material is an organic silicon resin used to prevent leakage currents on the surface of the silicon wafer, and also to prevent a spurious conductive path from developing between the anode and cathode electrodes. In the commercial package of the LASS 10 it will be mechanically supported on electrical conductors 54 and 56 shown in phantom section in FIG. 2. The light trigger source may be any optical driver which produces light having a wave length of about 1.06 meters. The limits for the light source are in the wave length range approximately 1.00 to 1.10 μmeters. If the wave length is longer than 1.14 μmeters, the light is not absorbed in the silicon wafer. If the wave length is shorter than about 1.0 μmeters it does not penetrate well into the silicon wafer. The choice of wave length within this range i.e. 1.00 to 1.10 μmeters, depends upon several factors including the voltage rating of the device, the particular configuration of the device, and most important, in the present state of the art, what light sources are presently commercially available. Typically, the light source is neodymium:yttrium aluminum garnet (Nd:YAG) laser. The laser source may be beamed directly at the optical system 48 or it may be delivered to the optical system 48 by means of optical fibers or mirrors of a combination of both.
In operation the LASS 10 is arranged so that a light trigger source emits light which is received by the optical system 48 and transmitted to the light transmitting conduits i.e. 36, 38 and 40 from where it then enters the cathode-base region 16 at the target areas 26, 28, 30. As best shown in FIG. 3, the light will enter the silicon ±23° from the normal N1 to the sides of the V channel 26, nominally at 55° off the normal N2 to the original surface, giving penetration of light under the metallized layer 34. As a result of this illumination anode to cathode conduction takes place in the place indicated at 58, a highly desired consequence since this is a low resistance path and consequently higher starting currents can be tolerated.
In another embodiment of the device, illustrated in FIGS. 5 and 6, light is introduced to both sides of the silicon wafer 12. Since the light which initially enters the silicon wafer 12 is depleted exponentially, as a function of the depth of penetration, the introduction of light from the anode-emitter region 20 will increase the available light in the portions of the regions where it would otherwise be weakened; this dual triggering will insure faster turn on, and more efficient utilization of the available light in many applications.
In order to avoid needless repetition of the identifying numeration, the same numerals have been retained in FIGS. 5 and 6 where the parts are identical to those in the FIGS. 1-4 embodiment.
Referring now to FIGS. 5 and 6, an equal number of targets, i.e. 1 to 10 or more, are prepared in the anode-emitter region 20, the area occupied by all of these targets covering less than 25% of the surface area of the anode-emitter region 20. In the interests of simplicity, only one of the V-shaped targets is shown at 58. These targets are etched in the silicon wafer 12 exactly as described in connection with FIG. 4.
As in the FIGS. 1-4 embodiment, a light transmitting conduit 60 is arranged to contact the target 58. The light transmitting conduit 60 comprises a light transmissive core 62, covered by a cladding 64, the cladding 64 being suitably removed at the end portions respectively, to receive the light trigger and deliver the light at the target 58. The materials for the core 62 and cladding 64 are the same as their counterparts in FIGS. 1-4.
A thin metallic layer 66 of aluminum, or an alloy of titanium, paladium and silver, about 5 μmeters thick, is plated over the anode-emitter region 20, the plating extending into the V-shaped target 58 for about 3 microns such as shown in FIG. 6. A metallic covering 68 of molybdenum is formed over the metallic layer 66 as well as the light transmitting conduits such as 62.
Similarly, as shown in FIG. 1., a plurality of the light transmitting conduits such as 60 are arranged in a yoke which optically communicates with a light prism indicated generally at 70.
Since there are now two optical systems 48 and 70 to which the light must be transmitted, the light source, laser 72, is split by mirrors 74 and 76. The mirror 74 is apertured, so that the laser beam which strikes it is deflected to mirror 76 and then to prism 70. The apertured mirror 74 also reflects the laser beam to the prism 48 as indicated by the dashed lines (unnumbered).

Claims (5)

I claim:
1. A light activated silicon switch comprising:
(a) a silicon wafer having cathode emitter, cathode base, anode base and anode emitter regions;
(b) a plurality of optical targets, each target comprising a channel etched in only the cathode base region, each of said channels extending from a major surface of said wafer into the cathode-base region to a depth less than the thickness of the region;
(c) a plurality of light transmitting conduits, each conduit having two end portions, and comprising a central core of light transmitting material surrounded by a cladding, the cladding being removed at one end portion for optically communicating with said channel, the other end portion being adapted to receive a light trigger from a source; and
(d) anode and cathode electrodes affixed to said anode and cathode emitter regions, said cathode electrode including a portion which extends into said channel.
2. A light activated silicon switch comprising:
(a) a silicon wafer having cathode emitter, cathode base, anode base and anode emitter regions;
(b) at least two optical targets, each of said targets comprising a channel, at least one of said targets being disposed in the cathode base region and at least one of said targets being disposed in the anode emitter region, each of said channels extending from a major surface of said wafer into the respective region to a depth less than the thickness of the region;
(c) at least two light transmitting conduits, each conduit having two end portions and comprising a central core of light transmitting material surrounded by a cladding, the cladding being removed at one end portion for optically communicating with said channel, the other end portion being adapted to receive a light trigger from a source; and
(d) anode and cathode electrodes affixed to said anode and cathode emitter regions.
3. A light activated silicon switch according to claim 1 wherein;
said optical targets occupy less than 25% of the total area of the cathode-base and anode-emitter regions respectively, and said channel is V-shaped.
4. A light activated silicon switch according to claim 1 wherein;
said central core is of flint glass and said cladding is of silicon dioxide.
5. A light activated silicon switch according to claim 1 wherein;
said cathode and anode electrodes each include an overhang portion which extends partially down into said channel.
US05/930,762 1978-08-03 1978-08-03 Light activated silicon switch with etched channel in cathode base and anode emitter communicating with cladded optical fiber Expired - Lifetime US4301462A (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
US05/930,762 US4301462A (en) 1978-08-03 1978-08-03 Light activated silicon switch with etched channel in cathode base and anode emitter communicating with cladded optical fiber
IN746/CAL/79A IN152332B (en) 1978-08-03 1979-07-20
CA332,482A CA1130475A (en) 1978-08-03 1979-07-24 Light activated silicon switch
BR7904830A BR7904830A (en) 1978-08-03 1979-07-27 LIGHT-ACTIVATED SEMICONDUCTOR SWITCH
BE0/196546A BE878002A (en) 1978-08-03 1979-07-31 IMPROVED LIGHT SENSITIVE SEMICONDUCTOR CONNECTOR
JP9816779A JPS5522897A (en) 1978-08-03 1979-08-02 Light energizing silicon switch
FR7919839A FR2432771A1 (en) 1978-08-03 1979-08-02 IMPROVED LIGHT SENSITIVE SEMICONDUCTOR CONNECTOR
DE19792931649 DE2931649A1 (en) 1978-08-03 1979-08-03 LIGHT ACTIVATED SEMICONDUCTOR SWITCH
GB7927174A GB2027991B (en) 1978-08-03 1979-08-03 Light activated semi conductor switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/930,762 US4301462A (en) 1978-08-03 1978-08-03 Light activated silicon switch with etched channel in cathode base and anode emitter communicating with cladded optical fiber

Publications (1)

Publication Number Publication Date
US4301462A true US4301462A (en) 1981-11-17

Family

ID=25459723

Family Applications (1)

Application Number Title Priority Date Filing Date
US05/930,762 Expired - Lifetime US4301462A (en) 1978-08-03 1978-08-03 Light activated silicon switch with etched channel in cathode base and anode emitter communicating with cladded optical fiber

Country Status (4)

Country Link
US (1) US4301462A (en)
JP (1) JPS5522897A (en)
BE (1) BE878002A (en)
CA (1) CA1130475A (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4611128A (en) * 1979-11-09 1986-09-09 Siemens Aktiengesellschaft Triac having a multilayer semiconductor body
US4612449A (en) * 1979-11-09 1986-09-16 Siemens Aktiengesellschaft Thyristor having a secondary emitter electrode and a method for operating the same
US4613766A (en) * 1979-11-09 1986-09-23 Siemens Aktiengesellschaft Thyristor having controllable emitter short circuits
US4772787A (en) * 1985-01-07 1988-09-20 Siemens Aktiengesellschaft Monolithically integrated opto-electronic semiconductor component
US4803172A (en) * 1986-01-24 1989-02-07 Siemens Aktiengesellschaft Method of manufacturing thyristor with integrated power supply for an associated circuit
US4877301A (en) * 1987-10-09 1989-10-31 Ricoh Company, Ltd. Covered optical waveguide having an inlet opening
US4897711A (en) * 1988-03-03 1990-01-30 American Telephone And Telegraph Company Subassembly for optoelectronic devices
US4945400A (en) * 1988-03-03 1990-07-31 At&T Bell Laboratories Subassembly for optoelectronic devices
US4966433A (en) * 1988-03-03 1990-10-30 At&T Bell Laboratories Device including a component in alignment with a substrate-supported waveguide
US4973133A (en) * 1988-09-29 1990-11-27 Siemens Aktiengesellschaft Arrangement for coupling an optical fiber to a coupling window of a planarly integrated optical component and the method of manufacturing the arrangement
US5747835A (en) * 1994-09-16 1998-05-05 Sgs-Thomson Microelectronics S.A. Serial arrangement of photothyristors
US20050001332A1 (en) * 2003-07-01 2005-01-06 Optiswitch Technology Corporation Light-activated semiconductor switches
EP1668750A2 (en) * 2003-08-29 2006-06-14 The Titan Corporation Laser-gated and pumped multi-layer semiconductor power switch with reduced forward losses
US20060214180A1 (en) * 2005-03-23 2006-09-28 Toshiba Mitsubishi-Electric Industrial Systems Corporation Semiconductor apparatus and method of assembling the same
US20150091048A1 (en) * 2013-09-27 2015-04-02 Scientific Applications & Research Associates, Inc Optically-triggered silicon controlled rectifier and method of fabrication of the same

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3590344A (en) * 1969-06-20 1971-06-29 Westinghouse Electric Corp Light activated semiconductor controlled rectifier
GB1254634A (en) * 1968-04-26 1971-11-24 Asea Ab Improved thyristor arrangement
US3994559A (en) * 1975-12-22 1976-11-30 International Business Machines Corporation Bidirectional guided mode optical film-fiber coupler
US4059338A (en) * 1975-09-09 1977-11-22 Sharp Kabushiki Kaisha Integrated optical waveguide coupler
US4097118A (en) * 1975-10-30 1978-06-27 Rca Corporation Optical waveguide coupler employing deformed shape fiber-optic core coupling portion
US4110781A (en) * 1975-10-11 1978-08-29 Hitachi, Ltd. Bidirectional grooved thyristor fired by activation of the beveled surfaces
US4128759A (en) * 1977-11-21 1978-12-05 The United States Of America As Represented By The Secretary Of The Navy Fiber optic delay line filter
US4135783A (en) * 1976-05-20 1979-01-23 Siemens Aktiengesellschaft Device for forming a detachable connection between a waveguide and another optical component
US4219833A (en) * 1978-05-22 1980-08-26 Electric Power Research Institute, Inc. Multigate light fired thyristor and method

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1254634A (en) * 1968-04-26 1971-11-24 Asea Ab Improved thyristor arrangement
US3590344A (en) * 1969-06-20 1971-06-29 Westinghouse Electric Corp Light activated semiconductor controlled rectifier
US4059338A (en) * 1975-09-09 1977-11-22 Sharp Kabushiki Kaisha Integrated optical waveguide coupler
US4110781A (en) * 1975-10-11 1978-08-29 Hitachi, Ltd. Bidirectional grooved thyristor fired by activation of the beveled surfaces
US4097118A (en) * 1975-10-30 1978-06-27 Rca Corporation Optical waveguide coupler employing deformed shape fiber-optic core coupling portion
US3994559A (en) * 1975-12-22 1976-11-30 International Business Machines Corporation Bidirectional guided mode optical film-fiber coupler
US4135783A (en) * 1976-05-20 1979-01-23 Siemens Aktiengesellschaft Device for forming a detachable connection between a waveguide and another optical component
US4128759A (en) * 1977-11-21 1978-12-05 The United States Of America As Represented By The Secretary Of The Navy Fiber optic delay line filter
US4219833A (en) * 1978-05-22 1980-08-26 Electric Power Research Institute, Inc. Multigate light fired thyristor and method

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4611128A (en) * 1979-11-09 1986-09-09 Siemens Aktiengesellschaft Triac having a multilayer semiconductor body
US4612449A (en) * 1979-11-09 1986-09-16 Siemens Aktiengesellschaft Thyristor having a secondary emitter electrode and a method for operating the same
US4613766A (en) * 1979-11-09 1986-09-23 Siemens Aktiengesellschaft Thyristor having controllable emitter short circuits
US4772787A (en) * 1985-01-07 1988-09-20 Siemens Aktiengesellschaft Monolithically integrated opto-electronic semiconductor component
US4803172A (en) * 1986-01-24 1989-02-07 Siemens Aktiengesellschaft Method of manufacturing thyristor with integrated power supply for an associated circuit
US4877301A (en) * 1987-10-09 1989-10-31 Ricoh Company, Ltd. Covered optical waveguide having an inlet opening
US4966433A (en) * 1988-03-03 1990-10-30 At&T Bell Laboratories Device including a component in alignment with a substrate-supported waveguide
US4945400A (en) * 1988-03-03 1990-07-31 At&T Bell Laboratories Subassembly for optoelectronic devices
US4897711A (en) * 1988-03-03 1990-01-30 American Telephone And Telegraph Company Subassembly for optoelectronic devices
US4973133A (en) * 1988-09-29 1990-11-27 Siemens Aktiengesellschaft Arrangement for coupling an optical fiber to a coupling window of a planarly integrated optical component and the method of manufacturing the arrangement
US5747835A (en) * 1994-09-16 1998-05-05 Sgs-Thomson Microelectronics S.A. Serial arrangement of photothyristors
US20050001332A1 (en) * 2003-07-01 2005-01-06 Optiswitch Technology Corporation Light-activated semiconductor switches
US7057214B2 (en) * 2003-07-01 2006-06-06 Optiswitch Technology Corporation Light-activated semiconductor switches
EP1668750A2 (en) * 2003-08-29 2006-06-14 The Titan Corporation Laser-gated and pumped multi-layer semiconductor power switch with reduced forward losses
EP1668750A4 (en) * 2003-08-29 2007-12-12 Titan Corp Laser-gated and pumped multi-layer semiconductor power switch with reduced forward losses
US20060214180A1 (en) * 2005-03-23 2006-09-28 Toshiba Mitsubishi-Electric Industrial Systems Corporation Semiconductor apparatus and method of assembling the same
US7922399B2 (en) * 2005-03-23 2011-04-12 Toshiba Mitsubishi-Electric Industrial Systems Corporation Semiconductor apparatus with semiconductor devices and cooling heat sinks
US20150091048A1 (en) * 2013-09-27 2015-04-02 Scientific Applications & Research Associates, Inc Optically-triggered silicon controlled rectifier and method of fabrication of the same

Also Published As

Publication number Publication date
JPS6115590B2 (en) 1986-04-24
CA1130475A (en) 1982-08-24
BE878002A (en) 1980-01-31
JPS5522897A (en) 1980-02-18

Similar Documents

Publication Publication Date Title
US4301462A (en) Light activated silicon switch with etched channel in cathode base and anode emitter communicating with cladded optical fiber
US4899204A (en) High voltage switch structure with light responsive diode stack
US4605942A (en) Multiple wavelength light emitting devices
US4816891A (en) Optically controllable static induction thyristor device
US3968564A (en) Alignment of optical fibers to light emitting diodes
US4866500A (en) Integrated light-triggered and light-quenched static induction thyristor and making method thereof
US4825081A (en) Light-activated series-connected pin diode switch
US5047364A (en) Method for making a multi-point emission type semiconductor laser device
GB2053555A (en) Semiconductor switching device for guiding and amplifying electromagnetic radiation
US4186409A (en) Light activated silicon switch
EP0061220A1 (en) Semiconductor laser having at least two radiation beams, and method of manufacturing same
US6339233B1 (en) Metal clad ridge waveguide (“MCRW”) laser semiconductor structure with doped semiconductor substrate
US3590344A (en) Light activated semiconductor controlled rectifier
EP0346389A1 (en) Dual mode laser/detector diode for optical fiber transmission lines
US3341857A (en) Semiconductor light source
US3699407A (en) Electro-optical coupled-pair using a schottky barrier diode detector
WO1994015353A1 (en) Laser electron-beam tube
US4136351A (en) Photo-coupled semiconductor device
US3471923A (en) Method of making diode arrays
US3551842A (en) Semiconductor laser having high power output and reduced threshold
US6365951B1 (en) Methods on constructing an avalanche light emitting diode
US3938173A (en) Optically coupled semiconductive switching devices
US3614661A (en) Semiconductor laser diode arrangement for exciting light-wave conductors
US4374393A (en) Light triggered thyristor device
US4542512A (en) Semiconductor laser having a metal-filled groove for improved cooling and stability

Legal Events

Date Code Title Description
STCF Information on status: patent grant

Free format text: PATENTED CASE