US4415427A - Thin film deposition by sputtering - Google Patents
Thin film deposition by sputtering Download PDFInfo
- Publication number
- US4415427A US4415427A US06/431,957 US43195782A US4415427A US 4415427 A US4415427 A US 4415427A US 43195782 A US43195782 A US 43195782A US 4415427 A US4415427 A US 4415427A
- Authority
- US
- United States
- Prior art keywords
- sputtering
- set forth
- dopant
- sputtering cathode
- cathode apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (9)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/431,957 US4415427A (en) | 1982-09-30 | 1982-09-30 | Thin film deposition by sputtering |
CA000436051A CA1209953A (en) | 1982-09-30 | 1983-09-02 | Thin film deposition by sputtering |
DE8383109359T DE3370238D1 (en) | 1982-09-30 | 1983-09-20 | Thin film deposition by sputtering |
EP83109359A EP0105409B1 (en) | 1982-09-30 | 1983-09-20 | Thin film deposition by sputtering |
JP58178334A JPS59116378A (en) | 1982-09-30 | 1983-09-28 | Thin film deposition by sputtering |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/431,957 US4415427A (en) | 1982-09-30 | 1982-09-30 | Thin film deposition by sputtering |
Publications (1)
Publication Number | Publication Date |
---|---|
US4415427A true US4415427A (en) | 1983-11-15 |
Family
ID=23714162
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US06/431,957 Expired - Fee Related US4415427A (en) | 1982-09-30 | 1982-09-30 | Thin film deposition by sputtering |
Country Status (5)
Country | Link |
---|---|
US (1) | US4415427A (en) |
EP (1) | EP0105409B1 (en) |
JP (1) | JPS59116378A (en) |
CA (1) | CA1209953A (en) |
DE (1) | DE3370238D1 (en) |
Cited By (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0163446A1 (en) * | 1984-05-17 | 1985-12-04 | Varian Associates, Inc. | Apparatus for and method of controlling magnetron sputter device having separate confining magnetic fields to separate targets subject to separate discharges |
US4569746A (en) * | 1984-05-17 | 1986-02-11 | Varian Associates, Inc. | Magnetron sputter device using the same pole piece for coupling separate confining magnetic fields to separate targets subject to separate discharges |
US4606806A (en) * | 1984-05-17 | 1986-08-19 | Varian Associates, Inc. | Magnetron sputter device having planar and curved targets |
WO1986006416A1 (en) * | 1985-05-02 | 1986-11-06 | Hewlett-Packard Company | Method and target for sputter depositing thin films |
US4632719A (en) * | 1985-09-18 | 1986-12-30 | Varian Associates, Inc. | Semiconductor etching apparatus with magnetic array and vertical shield |
US4647361A (en) * | 1985-09-03 | 1987-03-03 | International Business Machines Corporation | Sputtering apparatus |
US4657654A (en) * | 1984-05-17 | 1987-04-14 | Varian Associates, Inc. | Targets for magnetron sputter device having separate confining magnetic fields to separate targets subject to separate discharges |
WO1987004470A1 (en) * | 1986-01-21 | 1987-07-30 | Battelle Development Corporation | Cubic boron nitride preparation |
US4780190A (en) * | 1986-04-03 | 1988-10-25 | Glaceries De Saint-Roch | Sputtering cathode |
US4834855A (en) * | 1985-05-02 | 1989-05-30 | Hewlett-Packard Company | Method for sputter depositing thin films |
US4865710A (en) * | 1988-03-31 | 1989-09-12 | Wisconsin Alumni Research Foundation | Magnetron with flux switching cathode and method of operation |
US4885074A (en) * | 1987-02-24 | 1989-12-05 | International Business Machines Corporation | Plasma reactor having segmented electrodes |
US4960498A (en) * | 1986-08-26 | 1990-10-02 | Grundig E.M.V. Elektromechanische Versuchsanstalt | Method of manufacturing a magnetic head |
US5328582A (en) * | 1992-12-04 | 1994-07-12 | Honeywell Inc. | Off-axis magnetron sputter deposition of mirrors |
US5393675A (en) * | 1993-05-10 | 1995-02-28 | The University Of Toledo | Process for RF sputtering of cadmium telluride photovoltaic cell |
US5429729A (en) * | 1989-11-29 | 1995-07-04 | Hitachi, Ltd. | Sputtering apparatus, device for exchanging target and method for the same |
US5622608A (en) * | 1994-05-05 | 1997-04-22 | Research Foundation Of State University Of New York | Process of making oxidation resistant high conductivity copper layers |
WO1997036020A1 (en) * | 1996-03-26 | 1997-10-02 | Technion Research & Development Foundation Limited | Ceramic target for thin film deposition |
US5688382A (en) * | 1994-03-01 | 1997-11-18 | Applied Science And Technology, Inc. | Microwave plasma deposition source and method of filling high aspect-ratio features on a substrate |
US5736013A (en) * | 1994-04-06 | 1998-04-07 | Komag, Inc. | Method for forming an improved magnetic media including sputtering of selected oxides or nitrides in the magnetic layer, and apparatus for same |
US5985115A (en) * | 1997-04-11 | 1999-11-16 | Novellus Systems, Inc. | Internally cooled target assembly for magnetron sputtering |
US6197165B1 (en) * | 1998-05-06 | 2001-03-06 | Tokyo Electron Limited | Method and apparatus for ionized physical vapor deposition |
US6238526B1 (en) * | 1999-02-14 | 2001-05-29 | Advanced Ion Technology, Inc. | Ion-beam source with channeling sputterable targets and a method for channeled sputtering |
US6309516B1 (en) | 1999-05-07 | 2001-10-30 | Seagate Technology Llc | Method and apparatus for metal allot sputtering |
US6328856B1 (en) | 1999-08-04 | 2001-12-11 | Seagate Technology Llc | Method and apparatus for multilayer film deposition utilizing rotating multiple magnetron cathode device |
US6692619B1 (en) | 2001-08-14 | 2004-02-17 | Seagate Technology Llc | Sputtering target and method for making composite soft magnetic films |
US20050109392A1 (en) * | 2002-09-30 | 2005-05-26 | Hollars Dennis R. | Manufacturing apparatus and method for large-scale production of thin-film solar cells |
US20070056845A1 (en) * | 2005-09-13 | 2007-03-15 | Applied Materials, Inc. | Multiple zone sputtering target created through conductive and insulation bonding |
US20070056850A1 (en) * | 2005-09-13 | 2007-03-15 | Applied Materials, Inc. | Large-area magnetron sputtering chamber with individually controlled sputtering zones |
US20070205101A1 (en) * | 2005-09-13 | 2007-09-06 | Applied Materials, Inc. | Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers |
US20080029387A1 (en) * | 2006-08-04 | 2008-02-07 | Applied Materials, Inc. | Ganged Scanning of Multiple Magnetrons, Especially Two Level Folded Magnetrons |
US20100126848A1 (en) * | 2005-10-07 | 2010-05-27 | Tohoku University | Magnetron sputtering apparatus |
US20110162696A1 (en) * | 2010-01-05 | 2011-07-07 | Miasole | Photovoltaic materials with controllable zinc and sodium content and method of making thereof |
US20110186425A1 (en) * | 2008-06-19 | 2011-08-04 | Tokyo Electron Limited | Magnetron sputtering method, and magnetron sputtering apparatus |
US8134069B2 (en) | 2009-04-13 | 2012-03-13 | Miasole | Method and apparatus for controllable sodium delivery for thin film photovoltaic materials |
US10043921B1 (en) | 2011-12-21 | 2018-08-07 | Beijing Apollo Ding Rong Solar Technology Co., Ltd. | Photovoltaic cell with high efficiency cigs absorber layer with low minority carrier lifetime and method of making thereof |
US20190390324A1 (en) * | 2017-02-15 | 2019-12-26 | University Of The West Of Scotland | Apparatus and methods for depositing variable interference filters |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2208390B (en) * | 1987-08-06 | 1991-03-27 | Plessey Co Plc | Thin film deposition process |
DE3800449A1 (en) * | 1988-01-09 | 1989-07-20 | Leybold Ag | METHOD AND DEVICE FOR PRODUCING MAGNETO-OPTICAL, STORAGE AND ERASABLE DATA CARRIERS |
DE4304581A1 (en) * | 1993-02-16 | 1994-08-18 | Leybold Ag | Device for coating a substrate |
DE19813075A1 (en) * | 1998-03-25 | 1999-09-30 | Leybold Ag | Device for coating a substrate |
KR100910673B1 (en) * | 2006-08-04 | 2009-08-04 | 어플라이드 머티어리얼스, 인코포레이티드 | Ganged scanning of multiple magnetrons, especially two level folded magnetrons |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3530057A (en) * | 1967-05-29 | 1970-09-22 | Nat Res Corp | Sputtering |
US3878085A (en) * | 1973-07-05 | 1975-04-15 | Sloan Technology Corp | Cathode sputtering apparatus |
US3956093A (en) * | 1974-12-16 | 1976-05-11 | Airco, Inc. | Planar magnetron sputtering method and apparatus |
US4025410A (en) * | 1975-08-25 | 1977-05-24 | Western Electric Company, Inc. | Sputtering apparatus and methods using a magnetic field |
US4094764A (en) * | 1975-09-19 | 1978-06-13 | Commissariat A L'energie Atomique | Device for cathodic sputtering at a high deposition rate |
US4166018A (en) * | 1974-01-31 | 1979-08-28 | Airco, Inc. | Sputtering process and apparatus |
US4180450A (en) * | 1978-08-21 | 1979-12-25 | Vac-Tec Systems, Inc. | Planar magnetron sputtering device |
US4194962A (en) * | 1978-12-20 | 1980-03-25 | Advanced Coating Technology, Inc. | Cathode for sputtering |
US4303489A (en) * | 1978-08-21 | 1981-12-01 | Vac-Tec Systems, Inc. | Method and apparatus for producing a variable intensity pattern of sputtering material on a substrate |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3766041A (en) * | 1970-09-29 | 1973-10-16 | Matsushita Electric Ind Co Ltd | Method of producing piezoelectric thin films by cathodic sputtering |
FR2426093A2 (en) * | 1974-03-27 | 1979-12-14 | Anvar | Doped semiconductor thin film mfr. - by sputtering from main and auxiliary targets of semiconductor and dopant, with oscillation of dopant target |
US4013532A (en) * | 1975-03-03 | 1977-03-22 | Airco, Inc. | Method for coating a substrate |
-
1982
- 1982-09-30 US US06/431,957 patent/US4415427A/en not_active Expired - Fee Related
-
1983
- 1983-09-02 CA CA000436051A patent/CA1209953A/en not_active Expired
- 1983-09-20 EP EP83109359A patent/EP0105409B1/en not_active Expired
- 1983-09-20 DE DE8383109359T patent/DE3370238D1/en not_active Expired
- 1983-09-28 JP JP58178334A patent/JPS59116378A/en active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3530057A (en) * | 1967-05-29 | 1970-09-22 | Nat Res Corp | Sputtering |
US3878085A (en) * | 1973-07-05 | 1975-04-15 | Sloan Technology Corp | Cathode sputtering apparatus |
US4166018A (en) * | 1974-01-31 | 1979-08-28 | Airco, Inc. | Sputtering process and apparatus |
US3956093A (en) * | 1974-12-16 | 1976-05-11 | Airco, Inc. | Planar magnetron sputtering method and apparatus |
US4025410A (en) * | 1975-08-25 | 1977-05-24 | Western Electric Company, Inc. | Sputtering apparatus and methods using a magnetic field |
US4094764A (en) * | 1975-09-19 | 1978-06-13 | Commissariat A L'energie Atomique | Device for cathodic sputtering at a high deposition rate |
US4180450A (en) * | 1978-08-21 | 1979-12-25 | Vac-Tec Systems, Inc. | Planar magnetron sputtering device |
US4303489A (en) * | 1978-08-21 | 1981-12-01 | Vac-Tec Systems, Inc. | Method and apparatus for producing a variable intensity pattern of sputtering material on a substrate |
US4194962A (en) * | 1978-12-20 | 1980-03-25 | Advanced Coating Technology, Inc. | Cathode for sputtering |
Cited By (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4569746A (en) * | 1984-05-17 | 1986-02-11 | Varian Associates, Inc. | Magnetron sputter device using the same pole piece for coupling separate confining magnetic fields to separate targets subject to separate discharges |
US4595482A (en) * | 1984-05-17 | 1986-06-17 | Varian Associates, Inc. | Apparatus for and the method of controlling magnetron sputter device having separate confining magnetic fields to separate targets subject to separate discharges |
US4606806A (en) * | 1984-05-17 | 1986-08-19 | Varian Associates, Inc. | Magnetron sputter device having planar and curved targets |
EP0163446A1 (en) * | 1984-05-17 | 1985-12-04 | Varian Associates, Inc. | Apparatus for and method of controlling magnetron sputter device having separate confining magnetic fields to separate targets subject to separate discharges |
US4657654A (en) * | 1984-05-17 | 1987-04-14 | Varian Associates, Inc. | Targets for magnetron sputter device having separate confining magnetic fields to separate targets subject to separate discharges |
US4834855A (en) * | 1985-05-02 | 1989-05-30 | Hewlett-Packard Company | Method for sputter depositing thin films |
WO1986006416A1 (en) * | 1985-05-02 | 1986-11-06 | Hewlett-Packard Company | Method and target for sputter depositing thin films |
US4626336A (en) * | 1985-05-02 | 1986-12-02 | Hewlett Packard Company | Target for sputter depositing thin films |
US4647361A (en) * | 1985-09-03 | 1987-03-03 | International Business Machines Corporation | Sputtering apparatus |
US4632719A (en) * | 1985-09-18 | 1986-12-30 | Varian Associates, Inc. | Semiconductor etching apparatus with magnetic array and vertical shield |
WO1987004470A1 (en) * | 1986-01-21 | 1987-07-30 | Battelle Development Corporation | Cubic boron nitride preparation |
US4780190A (en) * | 1986-04-03 | 1988-10-25 | Glaceries De Saint-Roch | Sputtering cathode |
US4960498A (en) * | 1986-08-26 | 1990-10-02 | Grundig E.M.V. Elektromechanische Versuchsanstalt | Method of manufacturing a magnetic head |
US4885074A (en) * | 1987-02-24 | 1989-12-05 | International Business Machines Corporation | Plasma reactor having segmented electrodes |
US4865710A (en) * | 1988-03-31 | 1989-09-12 | Wisconsin Alumni Research Foundation | Magnetron with flux switching cathode and method of operation |
US5429729A (en) * | 1989-11-29 | 1995-07-04 | Hitachi, Ltd. | Sputtering apparatus, device for exchanging target and method for the same |
US5328582A (en) * | 1992-12-04 | 1994-07-12 | Honeywell Inc. | Off-axis magnetron sputter deposition of mirrors |
US5393675A (en) * | 1993-05-10 | 1995-02-28 | The University Of Toledo | Process for RF sputtering of cadmium telluride photovoltaic cell |
US5688382A (en) * | 1994-03-01 | 1997-11-18 | Applied Science And Technology, Inc. | Microwave plasma deposition source and method of filling high aspect-ratio features on a substrate |
US5736013A (en) * | 1994-04-06 | 1998-04-07 | Komag, Inc. | Method for forming an improved magnetic media including sputtering of selected oxides or nitrides in the magnetic layer, and apparatus for same |
US5976326A (en) * | 1994-04-06 | 1999-11-02 | Komag, Incorporated | Method of sputtering selected oxides and nitrides for forming magnetic media |
US5622608A (en) * | 1994-05-05 | 1997-04-22 | Research Foundation Of State University Of New York | Process of making oxidation resistant high conductivity copper layers |
US5959358A (en) * | 1994-05-05 | 1999-09-28 | Research Foundation Of State University Of New York | Oxidation resistant high conductivity copper layers for microelectronic applications and process of making same |
WO1997036020A1 (en) * | 1996-03-26 | 1997-10-02 | Technion Research & Development Foundation Limited | Ceramic target for thin film deposition |
US5985115A (en) * | 1997-04-11 | 1999-11-16 | Novellus Systems, Inc. | Internally cooled target assembly for magnetron sputtering |
US6197165B1 (en) * | 1998-05-06 | 2001-03-06 | Tokyo Electron Limited | Method and apparatus for ionized physical vapor deposition |
US6238526B1 (en) * | 1999-02-14 | 2001-05-29 | Advanced Ion Technology, Inc. | Ion-beam source with channeling sputterable targets and a method for channeled sputtering |
US6309516B1 (en) | 1999-05-07 | 2001-10-30 | Seagate Technology Llc | Method and apparatus for metal allot sputtering |
US6328856B1 (en) | 1999-08-04 | 2001-12-11 | Seagate Technology Llc | Method and apparatus for multilayer film deposition utilizing rotating multiple magnetron cathode device |
US6692619B1 (en) | 2001-08-14 | 2004-02-17 | Seagate Technology Llc | Sputtering target and method for making composite soft magnetic films |
US7544884B2 (en) * | 2002-09-30 | 2009-06-09 | Miasole | Manufacturing method for large-scale production of thin-film solar cells |
US20050109392A1 (en) * | 2002-09-30 | 2005-05-26 | Hollars Dennis R. | Manufacturing apparatus and method for large-scale production of thin-film solar cells |
US8618410B2 (en) | 2002-09-30 | 2013-12-31 | Miasole | Manufacturing apparatus and method for large-scale production of thin-film solar cells |
US7838763B2 (en) | 2002-09-30 | 2010-11-23 | Miasole | Manufacturing apparatus and method for large-scale production of thin-film solar cells |
US20090145746A1 (en) * | 2002-09-30 | 2009-06-11 | Miasole | Manufacturing apparatus and method for large-scale production of thin-film solar cells |
US7588668B2 (en) | 2005-09-13 | 2009-09-15 | Applied Materials, Inc. | Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers |
US20070056845A1 (en) * | 2005-09-13 | 2007-03-15 | Applied Materials, Inc. | Multiple zone sputtering target created through conductive and insulation bonding |
US20070205101A1 (en) * | 2005-09-13 | 2007-09-06 | Applied Materials, Inc. | Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers |
US20070056850A1 (en) * | 2005-09-13 | 2007-03-15 | Applied Materials, Inc. | Large-area magnetron sputtering chamber with individually controlled sputtering zones |
US20100126848A1 (en) * | 2005-10-07 | 2010-05-27 | Tohoku University | Magnetron sputtering apparatus |
WO2007102882A3 (en) * | 2005-11-04 | 2007-12-27 | Applied Materials Inc | Multiple zone sputtering target created through conductive and insulation bonding |
WO2007102882A2 (en) * | 2005-11-04 | 2007-09-13 | Applied Materials, Inc. | Multiple zone sputtering target created through conductive and insulation bonding |
US8961756B2 (en) * | 2006-08-04 | 2015-02-24 | Applied Materials, Inc. | Ganged scanning of multiple magnetrons, especially two level folded magnetrons |
US20080029387A1 (en) * | 2006-08-04 | 2008-02-07 | Applied Materials, Inc. | Ganged Scanning of Multiple Magnetrons, Especially Two Level Folded Magnetrons |
US20110186425A1 (en) * | 2008-06-19 | 2011-08-04 | Tokyo Electron Limited | Magnetron sputtering method, and magnetron sputtering apparatus |
US8134069B2 (en) | 2009-04-13 | 2012-03-13 | Miasole | Method and apparatus for controllable sodium delivery for thin film photovoltaic materials |
US8313976B2 (en) | 2009-04-13 | 2012-11-20 | Mackie Neil M | Method and apparatus for controllable sodium delivery for thin film photovoltaic materials |
US20110162696A1 (en) * | 2010-01-05 | 2011-07-07 | Miasole | Photovoltaic materials with controllable zinc and sodium content and method of making thereof |
US10043921B1 (en) | 2011-12-21 | 2018-08-07 | Beijing Apollo Ding Rong Solar Technology Co., Ltd. | Photovoltaic cell with high efficiency cigs absorber layer with low minority carrier lifetime and method of making thereof |
US10211351B2 (en) | 2011-12-21 | 2019-02-19 | Beijing Apollo Ding Rong Solar Technology Co., Ltd. | Photovoltaic cell with high efficiency CIGS absorber layer with low minority carrier lifetime and method of making thereof |
US20190390324A1 (en) * | 2017-02-15 | 2019-12-26 | University Of The West Of Scotland | Apparatus and methods for depositing variable interference filters |
US11891686B2 (en) * | 2017-02-15 | 2024-02-06 | University Of The West Of Scotland | Apparatus and methods for depositing variable interference filters |
Also Published As
Publication number | Publication date |
---|---|
EP0105409B1 (en) | 1987-03-11 |
EP0105409A2 (en) | 1984-04-18 |
CA1209953A (en) | 1986-08-19 |
EP0105409A3 (en) | 1984-10-03 |
JPS59116378A (en) | 1984-07-05 |
DE3370238D1 (en) | 1987-04-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: GTE PRODUCTS CORPORATION, A DE CORP Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNORS:HIDLER, HENRY T.;HOPE, LAWRENCE L.;DAVEY, ERNEST A.;REEL/FRAME:004051/0733 Effective date: 19820928 Owner name: GTE PRODUCTS CORPORATION Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:HIDLER, HENRY T.;HOPE, LAWRENCE L.;DAVEY, ERNEST A.;REEL/FRAME:004051/0733 Effective date: 19820928 |
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