US4476622A - Recessed gate static induction transistor fabrication - Google Patents

Recessed gate static induction transistor fabrication Download PDF

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US4476622A
US4476622A US06/573,222 US57322284A US4476622A US 4476622 A US4476622 A US 4476622A US 57322284 A US57322284 A US 57322284A US 4476622 A US4476622 A US 4476622A
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grooves
layer
gate
source
silicon
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US06/573,222
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Adrian I. Cogan
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Verizon Laboratories Inc
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GTE Laboratories Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1066—Gate region of field-effect devices with PN junction gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/911—Differential oxidation and etching

Definitions

  • This invention relates to gate-source structures for static induction transistors and, in particular, to a recessed gate structure which improves device performance and which requires relatively simple fabrication techniques.
  • the static induction transistor is a field effect semiconductor device capable of operation at relatively high frequency and power.
  • the transistors are characterized by a short, high resistivity semiconductor channel which may be controllably depleted of carriers.
  • the current-voltage characteristics of the static induction transistor are generally similar to those of a vacuum tube triode.
  • the devices are described by Nishizawa et al in U.S. Pat. No. 3,828,230 issued Aug. 6, 1974.
  • the static induction transistor generally uses a vertical geometry with source and drain electrodes placed on opposite sides of a thin, high resistivity layer of one conductivity type. Gate regions of the opposite conductivity type are positioned in the high resistivity layer on opposite sides of the source. During operation a reverse bias is applied between the gate region and the remainder of the high resistivity layer causing a depletion region to extend into the channel below the source. As the magnitude of the reverse bias voltage is varied, the source-drain current and voltage derived from an attached energy source will also vary.
  • the design and fabrication of the gate-source structure of vertical geometry static induction transistors is difficult.
  • the manufacture of the devices has utilized two basic geometries.
  • One of these geometries calls for placement of the gate junctions on the same surface of the device as source electrodes.
  • the other geometry calls for burying of the gate junctions within the high resistivity semiconductor material between the source and drain electrodes.
  • the surface-gate geometry facilitates manufacture and results in superior high frequency capability because of its relatively low gate capacitance.
  • the surface location of the gate regions adjacent to the source electrode causes inherent difficulty in extending the depletion region under the source and into the channel between the source and drain.
  • the gate regions are of limited depth because of limitations associated with diffusion processes. Because of the limited depth of the gate regions, a relatively large reverse bias voltage must be applied to the gate electrode to deplete the carriers in the channel under the source electrode. Therefore, the surface-gate geometry devices generally have low voltage gain.
  • the buried-gate structure is relatively difficult to manufacture but, because of the proximity of the gate regions to the channel, has a high voltage gain.
  • Present buried-gate-structure devices are limited to relatively low frequency operation because of large gate capacitance and resistance.
  • Previously proposed geometries which combine the low capacitance of the surface-gate structure with the high voltage gain of the buried-gate structure call for extending the gate region below the source and closer to the channel by first etching a relatively deep slot or groove into the surface on each side of the source.
  • the gate region is then formed by one of two methods.
  • One method involves epitaxially refilling each slot or groove to form the gate region.
  • the other method involves diffusion of the gate region into the semiconductor material surrounding each slot or groove.
  • Both methods require relatively complicated manufacturing processes and neither method fully combines the advantages of the two basic gate structures. While the voltage gain resulting from both methods is high, the resulting gate capacitance is large. A particular problem resulting from use of the diffusion method is the fact that the unprotected vertical side walls of the slot or groove represent a contamination window during device operation.
  • the present invention discloses a relatively simple manufacturing method for fabricating the gate-source structure for a high-gain, high-voltage, low-gate-capacitance static induction transistor and discloses the device itself.
  • the first step of the method disclosed is the etching of relatively deep grooves in an n-type wafer which has, for example, been previously implanted with arsenic and oxidized through a high pressure oxidation cycle. Nitrogen is then implanted into the exposed silicon area at the bottom of the grooves. A short thermal annealing step is used to form protective silicon nitrode at the bottom of each groove. An oxidation step follows during which a protective silicon dioxide layer is grown on the vertical walls of the etched grooves. The silicon nitride is then stripped from the bottoms of the grooves and boron is implanted in the bottom of each groove to begin doping to form the gate region. A reactive ion step follows a drive-in cycle. Silicon dioxide is removed from the source region between grooves and metal electrodes are deposited. Due to the shape and depth of the grooves, no mask is necessary to define the gate and source regions during metal deposition.
  • the fabrication process of the invention is selfaligning and requires no critical masking steps.
  • FIG. 1 is a cross-sectional view of a previously processed semiconductor wafer after formation of recessed-gate grooves and after nitrogen implant.
  • FIG. 2 is a cross-sectional view of the same wafer after a short annealing step and a subsequent oxidation step.
  • FIG. 3 is a cross-sectional view of the same wafer after silicon nitride has been removed from the bottom of the grooves and boron implanted and driven in to form gate regions.
  • FIG. 4 is a cross-sectional view of the same wafer after metal electrodes have been deposited to form a static induction transistor.
  • a wafer, or substrate, of single crystal semiconductor material of one conductivity type is provided as the supporting structure for fabrication of a field effect semiconductor device or static induction transistor according to the present invention.
  • the substrate may be, by way of example, silicon of n-type conductivity having a thickness of 250 to 300 microns and a resistivity of 0.01 ohm centimeters.
  • FIG. 1 illustrates a fragment of semiconductor wafer during processing of a static induction transistor according to a preferred embodiment of the present invention.
  • a thin, high resistivity epitaxial layer 40 preferably of (110) orientation n-type conductivity is grown on the upper surface of a highly doped substrate 42 of the same conductivity type.
  • the high resistivity layer may be, for example, 10 to 15 microns in thickness and about 30 ohm-cm resistivity.
  • the wafer is then implanted or doped with arsenic, for example, and oxidized through a high pressure oxidation cycle to form source region or layer 44 and silicon dioxide layer 46.
  • Grooves 48 are etched, using well-known orientation-dependent wet-etching or plasma-assisted etching techniques, in the wafer to a depth of, for example, about 2 to 7 microns. If plasma-assisted etching is used, the preferred crystalline orientation of the wafer is not critical. Grooves 48 may have a width of about 2 to 5 microns. Nitrogen is then implanted into the exposed silicon area at the bottom of the grooves. A short thermal annealing step then causes a protective coating 50 of silicon nitride to form at the bottom of grooves 48. The process is described, for example, by M. Ramin et al in "Oxidation Inhibiting Properties of Si 3 N 4 Layers Produced by Ion Implantation," Applied Physics 22, 1980 pp. 393-397.
  • a protective layer 52 of silicon dioxide is grown on the vertically etched walls of grooves 48.
  • silicon nitride coating 50 inhibits growth of silicon dioxide at the bottom of grooves 48.
  • silicon nitride coating 50 is stripped from the bottom of grooves 48. Boron, for example, is then implanted and driven to form gate regions 54 of a depth of, for example, about 1.5 to 3 microns.
  • FIG. 4 A cross-sectional view of the completed fragment of the static induction transistor is illustrated in FIG. 4.
  • a reactive ion etching step is used to remove silicon dioxide layer 46.
  • Metal electrodes 56 and 58 for the source and gate regions are deposited on the wafer. No masking steps are required because of the step which creates vertical walls of grooves 48.
  • Metal electrode 60 is deposited on the opposite side of substrate 42 to form the drain contact. After processing the individual devices can be separated by any one of a number of conventional techniques.
  • Gate regions 46 are formed as strips, for example, 100 to 120 microns in length normal to the plane of the cross-section.
  • source region 48 is formed as a strip, for example, about 10 microns shorter than the gate regions 46.
  • the length of the regions is primarily limited by the maximum permitted voltage drop along the electrodes which contact the regions.
  • a device with a single source and two gates is shown in FIG. 4. For increased power handling capability additional cells or gate-source combinations can be added as is the normal practice without departing from the scope of the invention.
  • a time-varying reverse bias voltage is applied by way of the electrodes to the junction between gate region 54 and the remainder of high resistivity layer 40.
  • the associated depletion region extends into high resistivity layer 40 and controls the current flowing between source and drain resulting from an external source of electrical energy, not shown.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

A gate-source structure and fabrication method for a static induction transistor having improved gain and frequency characteristics and having relatively simple fabrication requirements. The method and the device are embodied by gate regions diffused into the bottom of parallel recessed grooves located in a high resistivity epitaxial semiconductor layer, the surface of the semiconductor layer having a previously diffused source region located between the recessed grooves. The walls of the recessed grooves are covered with silicon dioxide.

Description

This is a division, of application Ser. No. 334,404, filed Dec. 24, 1981.
BACKGROUND OF THE INVENTION
This invention relates to gate-source structures for static induction transistors and, in particular, to a recessed gate structure which improves device performance and which requires relatively simple fabrication techniques.
The static induction transistor is a field effect semiconductor device capable of operation at relatively high frequency and power. The transistors are characterized by a short, high resistivity semiconductor channel which may be controllably depleted of carriers. The current-voltage characteristics of the static induction transistor are generally similar to those of a vacuum tube triode. The devices are described by Nishizawa et al in U.S. Pat. No. 3,828,230 issued Aug. 6, 1974.
The static induction transistor generally uses a vertical geometry with source and drain electrodes placed on opposite sides of a thin, high resistivity layer of one conductivity type. Gate regions of the opposite conductivity type are positioned in the high resistivity layer on opposite sides of the source. During operation a reverse bias is applied between the gate region and the remainder of the high resistivity layer causing a depletion region to extend into the channel below the source. As the magnitude of the reverse bias voltage is varied, the source-drain current and voltage derived from an attached energy source will also vary.
The design and fabrication of the gate-source structure of vertical geometry static induction transistors is difficult. In general, the manufacture of the devices has utilized two basic geometries. One of these geometries calls for placement of the gate junctions on the same surface of the device as source electrodes. The other geometry calls for burying of the gate junctions within the high resistivity semiconductor material between the source and drain electrodes.
The surface-gate geometry facilitates manufacture and results in superior high frequency capability because of its relatively low gate capacitance. However, the surface location of the gate regions adjacent to the source electrode causes inherent difficulty in extending the depletion region under the source and into the channel between the source and drain. In general, the gate regions are of limited depth because of limitations associated with diffusion processes. Because of the limited depth of the gate regions, a relatively large reverse bias voltage must be applied to the gate electrode to deplete the carriers in the channel under the source electrode. Therefore, the surface-gate geometry devices generally have low voltage gain.
The buried-gate structure, on the other hand, is relatively difficult to manufacture but, because of the proximity of the gate regions to the channel, has a high voltage gain. Present buried-gate-structure devices are limited to relatively low frequency operation because of large gate capacitance and resistance.
Previously proposed geometries which combine the low capacitance of the surface-gate structure with the high voltage gain of the buried-gate structure call for extending the gate region below the source and closer to the channel by first etching a relatively deep slot or groove into the surface on each side of the source. The gate region is then formed by one of two methods. One method involves epitaxially refilling each slot or groove to form the gate region. The other method involves diffusion of the gate region into the semiconductor material surrounding each slot or groove.
Both methods require relatively complicated manufacturing processes and neither method fully combines the advantages of the two basic gate structures. While the voltage gain resulting from both methods is high, the resulting gate capacitance is large. A particular problem resulting from use of the diffusion method is the fact that the unprotected vertical side walls of the slot or groove represent a contamination window during device operation.
SUMMARY OF THE INVENTION
The present invention discloses a relatively simple manufacturing method for fabricating the gate-source structure for a high-gain, high-voltage, low-gate-capacitance static induction transistor and discloses the device itself.
The first step of the method disclosed is the etching of relatively deep grooves in an n-type wafer which has, for example, been previously implanted with arsenic and oxidized through a high pressure oxidation cycle. Nitrogen is then implanted into the exposed silicon area at the bottom of the grooves. A short thermal annealing step is used to form protective silicon nitrode at the bottom of each groove. An oxidation step follows during which a protective silicon dioxide layer is grown on the vertical walls of the etched grooves. The silicon nitride is then stripped from the bottoms of the grooves and boron is implanted in the bottom of each groove to begin doping to form the gate region. A reactive ion step follows a drive-in cycle. Silicon dioxide is removed from the source region between grooves and metal electrodes are deposited. Due to the shape and depth of the grooves, no mask is necessary to define the gate and source regions during metal deposition.
The fabrication process of the invention is selfaligning and requires no critical masking steps.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a cross-sectional view of a previously processed semiconductor wafer after formation of recessed-gate grooves and after nitrogen implant.
FIG. 2 is a cross-sectional view of the same wafer after a short annealing step and a subsequent oxidation step.
FIG. 3 is a cross-sectional view of the same wafer after silicon nitride has been removed from the bottom of the grooves and boron implanted and driven in to form gate regions.
FIG. 4 is a cross-sectional view of the same wafer after metal electrodes have been deposited to form a static induction transistor.
The elements of the Figures are not drawn to scale and the Figures are intended only for use in explanation of the fabrication steps and the resulting structure.
DETAILED DESCRIPTION OF THE INVENTION
A wafer, or substrate, of single crystal semiconductor material of one conductivity type is provided as the supporting structure for fabrication of a field effect semiconductor device or static induction transistor according to the present invention. The substrate may be, by way of example, silicon of n-type conductivity having a thickness of 250 to 300 microns and a resistivity of 0.01 ohm centimeters.
FIG. 1 illustrates a fragment of semiconductor wafer during processing of a static induction transistor according to a preferred embodiment of the present invention. A thin, high resistivity epitaxial layer 40 preferably of (110) orientation n-type conductivity is grown on the upper surface of a highly doped substrate 42 of the same conductivity type. The high resistivity layer may be, for example, 10 to 15 microns in thickness and about 30 ohm-cm resistivity. The wafer is then implanted or doped with arsenic, for example, and oxidized through a high pressure oxidation cycle to form source region or layer 44 and silicon dioxide layer 46. Grooves 48 are etched, using well-known orientation-dependent wet-etching or plasma-assisted etching techniques, in the wafer to a depth of, for example, about 2 to 7 microns. If plasma-assisted etching is used, the preferred crystalline orientation of the wafer is not critical. Grooves 48 may have a width of about 2 to 5 microns. Nitrogen is then implanted into the exposed silicon area at the bottom of the grooves. A short thermal annealing step then causes a protective coating 50 of silicon nitride to form at the bottom of grooves 48. The process is described, for example, by M. Ramin et al in "Oxidation Inhibiting Properties of Si3 N4 Layers Produced by Ion Implantation," Applied Physics 22, 1980 pp. 393-397.
Referring now to FIG. 2, a protective layer 52 of silicon dioxide is grown on the vertically etched walls of grooves 48. As shown by J. A. Apels et al in "Local Oxidation of Silicon," Philips Technical Review 25, 1970, pp. 118-132, silicon nitride coating 50 inhibits growth of silicon dioxide at the bottom of grooves 48.
As illustrated by the structure of FIG. 3, silicon nitride coating 50 is stripped from the bottom of grooves 48. Boron, for example, is then implanted and driven to form gate regions 54 of a depth of, for example, about 1.5 to 3 microns.
A cross-sectional view of the completed fragment of the static induction transistor is illustrated in FIG. 4. A reactive ion etching step is used to remove silicon dioxide layer 46. Metal electrodes 56 and 58 for the source and gate regions are deposited on the wafer. No masking steps are required because of the step which creates vertical walls of grooves 48. Metal electrode 60 is deposited on the opposite side of substrate 42 to form the drain contact. After processing the individual devices can be separated by any one of a number of conventional techniques.
In the various figures a cross-section of a static induction transistor is shown. Gate regions 46 are formed as strips, for example, 100 to 120 microns in length normal to the plane of the cross-section. Similarly, source region 48 is formed as a strip, for example, about 10 microns shorter than the gate regions 46. The length of the regions is primarily limited by the maximum permitted voltage drop along the electrodes which contact the regions. Additionally, a device with a single source and two gates is shown in FIG. 4. For increased power handling capability additional cells or gate-source combinations can be added as is the normal practice without departing from the scope of the invention.
During operation of the static induction transistor of this invention a time-varying reverse bias voltage is applied by way of the electrodes to the junction between gate region 54 and the remainder of high resistivity layer 40. The associated depletion region extends into high resistivity layer 40 and controls the current flowing between source and drain resulting from an external source of electrical energy, not shown.

Claims (3)

What is claimed is:
1. A method for forming a gate-source structure for a static induction transistor, said method comprising the steps of:
growing a high resistivity, epitaxial silicon layer on a semiconductor substrate;
forming a source layer on said high resistivity epitaxial silicon layer;
growing a first silicon dioxide layer over said high resistivity epitaxial silicon layer;
etching through said first silicon dioxide layer and source layer and into said high resistivity epitaxial silicon layer to form recessed grooves, said grooves having a depth of from one-fifth to one-half of the thickness of said high resistivity epitaxial silicon layer;
implanting nitrogen into the exposed silicon area at the bottom of said recessed grooves;
annealing said implanted nitrogen to form a silicon nitride layer in said bottom of said grooves;
growing a second silicon dioxide layer over the vertical walls of said recessed grooves;
stripping said silicon nitride from the bottom of said grooves;
doping the bottom of said grooves;
etching to remove said first silicon dioxide layer; and
depositing metal over said structure to form source and gate electrodes.
2. A method as defined in claim 1 wherein said epitaxial layer has a (110) orientation and said first etching step uses a wet-etching technique.
3. A method as defined in claim 1 wherein said epitaxial layer is about ten to fifteen microns thick, said grooves are about two to seve microns deep, and said step of doping the bottom of said grooves forms gate regions about one and one-half to three microns deep from the bottom of said grooves.
US06/573,222 1981-12-24 1984-01-23 Recessed gate static induction transistor fabrication Expired - Fee Related US4476622A (en)

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Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4543706A (en) * 1984-02-24 1985-10-01 Gte Laboratories Incorporated Fabrication of junction field effect transistor with filled grooves
US4566172A (en) * 1984-02-24 1986-01-28 Gte Laboratories Incorporated Method of fabricating a static induction type recessed junction field effect transistor
US4567641A (en) * 1982-04-12 1986-02-04 General Electric Company Method of fabricating semiconductor devices having a diffused region of reduced length
FR2572584A1 (en) * 1984-10-29 1986-05-02 Japan Res Dev Corp METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE WITH A RECESSED GRID STRUCTURE, IN PARTICULAR A STATIC INDUCTION TRANSISTOR
US4589193A (en) * 1984-06-29 1986-05-20 International Business Machines Corporation Metal silicide channel stoppers for integrated circuits and method for making the same
US4611384A (en) * 1985-04-30 1986-09-16 Gte Laboratories Incorporated Method of making junction field effect transistor of static induction type
US4683643A (en) * 1984-07-16 1987-08-04 Nippon Telegraph And Telephone Corporation Method of manufacturing a vertical MOSFET with single surface electrodes
US4689871A (en) * 1985-09-24 1987-09-01 Texas Instruments Incorporated Method of forming vertically integrated current source
US4713358A (en) * 1986-05-02 1987-12-15 Gte Laboratories Incorporated Method of fabricating recessed gate static induction transistors
EP0249122A1 (en) * 1986-06-03 1987-12-16 BBC Brown Boveri AG Turn-off power semiconductor device
US4835586A (en) * 1987-09-21 1989-05-30 Siliconix Incorporated Dual-gate high density fet
US4845051A (en) * 1987-10-29 1989-07-04 Siliconix Incorporated Buried gate JFET
US5122848A (en) * 1991-04-08 1992-06-16 Micron Technology, Inc. Insulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitance
US5143859A (en) * 1989-01-18 1992-09-01 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a static induction type switching device
US5250450A (en) * 1991-04-08 1993-10-05 Micron Technology, Inc. Insulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitance
US5264381A (en) * 1989-01-18 1993-11-23 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a static induction type switching device
US5273918A (en) * 1984-01-26 1993-12-28 Temic Telefunken Microelectronic Gmbh Process for the manufacture of a junction field effect transistor
DE19528746C1 (en) * 1995-08-04 1996-10-31 Siemens Ag Lateral silicon di:oxide spacer prodn. in semiconductor structure
US5612547A (en) * 1993-10-18 1997-03-18 Northrop Grumman Corporation Silicon carbide static induction transistor
US5702987A (en) * 1996-08-26 1997-12-30 Chartered Semiconductor Manufacturing Pte Ltd Method of manufacture of self-aligned JFET
US5705830A (en) * 1996-09-05 1998-01-06 Northrop Grumman Corporation Static induction transistors
US5915190A (en) * 1995-12-27 1999-06-22 Lam Research Corporation Methods for filling trenches in a semiconductor wafer
US6080669A (en) * 1999-01-05 2000-06-27 Advanced Micro Devices, Inc. Semiconductor interconnect interface processing by high pressure deposition
US6537888B2 (en) 2000-07-26 2003-03-25 Samsung Electronics Co., Ltd. Method for fabricating a semiconductor device reducing junction leakage current and narrow width effect
US6720632B2 (en) * 2000-06-20 2004-04-13 Matsushita Electric Industrial Co., Ltd. Semiconductor device having diffusion layer formed using dopant of large mass number
US20060131605A1 (en) * 2004-12-22 2006-06-22 Cogan Adrian I Low capacitance two-terminal barrier controlled TVS diodes
US20060223332A1 (en) * 2005-03-30 2006-10-05 Hynix Semiconductor Inc. Method of manufacturing semiconductor device
US20110049532A1 (en) * 2009-08-28 2011-03-03 Microsemi Corporation Silicon carbide dual-mesa static induction transistor
US8519410B1 (en) 2010-12-20 2013-08-27 Microsemi Corporation Silicon carbide vertical-sidewall dual-mesa static induction transistor
US10643852B2 (en) 2016-09-30 2020-05-05 Semiconductor Components Industries, Llc Process of forming an electronic device including exposing a substrate to an oxidizing ambient

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3938241A (en) * 1972-10-24 1976-02-17 Motorola, Inc. Vertical channel junction field-effect transistors and method of manufacture
US3999281A (en) * 1976-01-16 1976-12-28 The United States Of America As Represented By The Secretary Of The Air Force Method for fabricating a gridded Schottky barrier field effect transistor
US4115793A (en) * 1976-11-30 1978-09-19 Zaidan Hojin Handotai Kenkyu Shinkokai Field effect transistor with reduced series resistance
US4199771A (en) * 1977-04-13 1980-04-22 Nippon Gakki Seizo Kabushiki Kaisha Static induction transistor
US4356041A (en) * 1979-10-01 1982-10-26 Hitachi, Ltd. Method of fabricating a mis-type device by using a gate electrode and selectively implanted nitride layer
US4375124A (en) * 1981-11-12 1983-03-01 Gte Laboratories Incorporated Power static induction transistor fabrication

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3938241A (en) * 1972-10-24 1976-02-17 Motorola, Inc. Vertical channel junction field-effect transistors and method of manufacture
US3999281A (en) * 1976-01-16 1976-12-28 The United States Of America As Represented By The Secretary Of The Air Force Method for fabricating a gridded Schottky barrier field effect transistor
US4115793A (en) * 1976-11-30 1978-09-19 Zaidan Hojin Handotai Kenkyu Shinkokai Field effect transistor with reduced series resistance
US4199771A (en) * 1977-04-13 1980-04-22 Nippon Gakki Seizo Kabushiki Kaisha Static induction transistor
US4356041A (en) * 1979-10-01 1982-10-26 Hitachi, Ltd. Method of fabricating a mis-type device by using a gate electrode and selectively implanted nitride layer
US4375124A (en) * 1981-11-12 1983-03-01 Gte Laboratories Incorporated Power static induction transistor fabrication

Cited By (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4567641A (en) * 1982-04-12 1986-02-04 General Electric Company Method of fabricating semiconductor devices having a diffused region of reduced length
US5273918A (en) * 1984-01-26 1993-12-28 Temic Telefunken Microelectronic Gmbh Process for the manufacture of a junction field effect transistor
US4566172A (en) * 1984-02-24 1986-01-28 Gte Laboratories Incorporated Method of fabricating a static induction type recessed junction field effect transistor
US4543706A (en) * 1984-02-24 1985-10-01 Gte Laboratories Incorporated Fabrication of junction field effect transistor with filled grooves
US4589193A (en) * 1984-06-29 1986-05-20 International Business Machines Corporation Metal silicide channel stoppers for integrated circuits and method for making the same
US4683643A (en) * 1984-07-16 1987-08-04 Nippon Telegraph And Telephone Corporation Method of manufacturing a vertical MOSFET with single surface electrodes
FR2572584A1 (en) * 1984-10-29 1986-05-02 Japan Res Dev Corp METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE WITH A RECESSED GRID STRUCTURE, IN PARTICULAR A STATIC INDUCTION TRANSISTOR
US4611384A (en) * 1985-04-30 1986-09-16 Gte Laboratories Incorporated Method of making junction field effect transistor of static induction type
US4689871A (en) * 1985-09-24 1987-09-01 Texas Instruments Incorporated Method of forming vertically integrated current source
US4713358A (en) * 1986-05-02 1987-12-15 Gte Laboratories Incorporated Method of fabricating recessed gate static induction transistors
EP0249122A1 (en) * 1986-06-03 1987-12-16 BBC Brown Boveri AG Turn-off power semiconductor device
US4952990A (en) * 1986-06-03 1990-08-28 Bbc Brown Boveri Ag. Gate turn-off power semiconductor component
CH670173A5 (en) * 1986-06-03 1989-05-12 Bbc Brown Boveri & Cie
US4835586A (en) * 1987-09-21 1989-05-30 Siliconix Incorporated Dual-gate high density fet
US4845051A (en) * 1987-10-29 1989-07-04 Siliconix Incorporated Buried gate JFET
US5143859A (en) * 1989-01-18 1992-09-01 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a static induction type switching device
US5264381A (en) * 1989-01-18 1993-11-23 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a static induction type switching device
US5122848A (en) * 1991-04-08 1992-06-16 Micron Technology, Inc. Insulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitance
US5250450A (en) * 1991-04-08 1993-10-05 Micron Technology, Inc. Insulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitance
US5612547A (en) * 1993-10-18 1997-03-18 Northrop Grumman Corporation Silicon carbide static induction transistor
DE19528746C1 (en) * 1995-08-04 1996-10-31 Siemens Ag Lateral silicon di:oxide spacer prodn. in semiconductor structure
US6030900A (en) * 1995-08-04 2000-02-29 Siemens Aktiengesellschaft Process for generating a space in a structure
US5915190A (en) * 1995-12-27 1999-06-22 Lam Research Corporation Methods for filling trenches in a semiconductor wafer
US5702987A (en) * 1996-08-26 1997-12-30 Chartered Semiconductor Manufacturing Pte Ltd Method of manufacture of self-aligned JFET
US5705830A (en) * 1996-09-05 1998-01-06 Northrop Grumman Corporation Static induction transistors
US6080669A (en) * 1999-01-05 2000-06-27 Advanced Micro Devices, Inc. Semiconductor interconnect interface processing by high pressure deposition
US6720632B2 (en) * 2000-06-20 2004-04-13 Matsushita Electric Industrial Co., Ltd. Semiconductor device having diffusion layer formed using dopant of large mass number
DE10134444B4 (en) * 2000-07-26 2007-04-05 Samsung Electronics Co., Ltd., Suwon A method of fabricating a semiconductor device having locally formed channel-stop impurity regions.
US6537888B2 (en) 2000-07-26 2003-03-25 Samsung Electronics Co., Ltd. Method for fabricating a semiconductor device reducing junction leakage current and narrow width effect
US7544544B2 (en) 2004-12-22 2009-06-09 Tyco Electronics Corporation Low capacitance two-terminal barrier controlled TVS diodes
US7244970B2 (en) 2004-12-22 2007-07-17 Tyco Electronics Corporation Low capacitance two-terminal barrier controlled TVS diodes
US20060131605A1 (en) * 2004-12-22 2006-06-22 Cogan Adrian I Low capacitance two-terminal barrier controlled TVS diodes
US20060223332A1 (en) * 2005-03-30 2006-10-05 Hynix Semiconductor Inc. Method of manufacturing semiconductor device
US20110049532A1 (en) * 2009-08-28 2011-03-03 Microsemi Corporation Silicon carbide dual-mesa static induction transistor
US8519410B1 (en) 2010-12-20 2013-08-27 Microsemi Corporation Silicon carbide vertical-sidewall dual-mesa static induction transistor
US10643852B2 (en) 2016-09-30 2020-05-05 Semiconductor Components Industries, Llc Process of forming an electronic device including exposing a substrate to an oxidizing ambient

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