US4633811A - Plasma CVD apparatus - Google Patents
Plasma CVD apparatus Download PDFInfo
- Publication number
- US4633811A US4633811A US06/691,861 US69186185A US4633811A US 4633811 A US4633811 A US 4633811A US 69186185 A US69186185 A US 69186185A US 4633811 A US4633811 A US 4633811A
- Authority
- US
- United States
- Prior art keywords
- electrodes
- high frequency
- plasma cvd
- supplied
- cvd apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
Definitions
- noncrystalline semiconductor films such as noncrystalline or amorphous silicon (hereinafter called a-Si for short)
- plasma CVD apparatus for manufacturing plates with thin films have included a high-frequency electrode and a substrate electrode for holding a substrate, mounted in face-to-face relation in a vacuum reaction chamber.
- a plurality of electrode pairs are alternately connected in parallel, substrates used to form the thin films are arranged on both sides of each of the substrate electrodes, and power is supplied to all the electrodes from a single power supply to provide a mass production type apparatus, as disclosed in Japanese laid-open application No. 48416/1983.
- a thin film is normally formed by applying an AC electric field across the electrodes at a gas pressure of about 0.1 to 10 torr and decomposing a gas in the chamber by means of a glow discharge. Since a single power supply is used to apply the electric field to all electrodes, all of the electrode pairs are connected in parallel. If the size of the substrate is increased when this method is used, uniformity of the thin film formed on all of the substrates in an array cannot be attained at a frequency of 13.56 Mhz even though a film of good quality is normally obtainable at that frequency. On the other hand, if a frequency of approximately 100 KHz is used, the electrical stress applied to the film is very large and satisfactory film properties are not uniformly obtained when as a-Si film is formed.
- an object of the present invention is to provide an apparatus for manufacturing plates having thin films which overcomes the above-mentioned disadvantages of the prior art.
- Another object of the invention is to provide such an apparatus having pairs of electrodes in an array wherein uneven discharge problems at high frequency are eliminated and electromagnetic interference is avoided so that uniform thin films can be formed on all substrates with excellent reproducibility even if substrates having a large area are used.
- a power supply output unit is defined as a terminal at which output power from the power supply is available at a level which is adjustable and substantially independent of the level at the other output units.
- a power supply means which provides at least a pair of output units and the high frequency electrodes are connected into at least two sets, each connected to a separate output unit.
- the plurality of output units which can be controlled independently of one another are supplied by a single power source so as to avoid high frequency electric field phase shift as well as electromagnetic interference, thereby assuring that the output units will supply power in the same phase relation to all of the electrodes.
- FIG. 1 is a schematic cross-sectional view illustrating a conventional plasma CVD apparatus
- FIG. 2 is a schematic cross-sectional view showing a representative embodiment of the present invention
- FIGS. 3, 6 and 7 are schematic cross-sectional views illustrating additional embodiments of the present invention.
- FIGS. 4 and 5 are schematic circuit diagrams showing the arrangement of the power supplies for the embodiments of FIGS. 1 and 3, respectively.
- FIG. 1 of the drawings shows a conventional plasma CVD apparatus comprising a vacuum chamber containing four pairs of electrodes 2 and 3. Two plate substrates 4 are mounted on opposite sides of each substrate electrode 3 and the pairs of adjacent electrodes are connected to a high frequency power supply 5. As discussed above, when the electrodes are large and are energized at high frequency, non-uniform films are produced, whereas, if lower frequency is used, satisfactory film properties may not be obtained.
- FIG. 2 illustrates a first embodiment of the present invention wherein a series of high frequency electrodes 12 and substrate electrodes 13 are alternately positioned in a row and a series of high frequency power supplies 15 are individually connected across each pair of high frequency electrodes and substrate electrodes, respectively.
- substrate electrodes 13 are connected together to be in phase with one another and may all be grounded but it is not always necessary to ground them.
- a frequency of 13.56 MHz is usually employed for the high frequency field but, when nitrate film are to be formed, a frequency of about 50 KHz to 500 KHz is preferred.
- the output of each power supply 15 is controlled by a phase regulator 16 so as to provide the desired phase for each individual power supply so that all the electrodes 12 may be kept essentially in phase.
- the power to be applied to each pair of electrodes can be individually regulated by making the high frequency power supplies independent of one another, it is possible to allow all of the electrodes to discharge uniformly even if the shape of each electrode is different from the others. Because the phase of each of the high frequency supplies is controlled, the power is prevented from flowing backward, so to speak, and producing a phenomenon in which the reflected wave of one of the power supplies becomes abnormally large because of electromagnetic mutual interference between the electrodes.
- FIG. 3 illustrates another embodiment of the present invention which differs from the embodiment shown in FIG. 2, primarily in the method of phase regulation.
- FIG. 4 illustrates the details of the high frequency power which normally is used in the arrangement of supply of FIG. 1, which basically comprises a source 18, an isolation amplifier or buffer 19 including a conventional power controller for varying the output level or the like, a matching circuit 20, and an output terminal or unit 21.
- FIG. 5 shows the details of the high frequency power supply which is used in the inventive embodiment 15 of FIG. 3 which comprises a single source 18 and a series of amplifiers 19 and corresponding matching circuits 20, each supplying a separate terminal or output unit 21.
- FIG. 6 illustrates still another embodiment of the invention.
- This embodiment differs from that of FIG. 3 in that the set of electrodes having equivalent geometrical shape are connected in parallel to an outlet terminal 21 of a high frequency power supply 15.
- the set of the two outer high frequency electrodes are connected together to one terminal or output unit 21 and the set of the electrodes are connected together to a different terminal or output unit.
- the load impedences during discharge are also the same. Accordingly, these electrodes discharge uniformly even though they are connected together so that they can be completely controlled by adjusting the length of the conductors from the output terminal so as to regulate the impedance in each of the electrode circuits.
- FIG. 7 illustrates still another embodiment which differs from that of FIG. 3 in that substrates are provided on both sides of the high frequency electrodes 12 as well as on the substrate electrodes 13, thereby doubling the number of substrates that can be produced.
- the substrate electrodes 13 may be grounded, it is preferred that the electrodes 13 not grounded because electric fields on the high frequency electrode and substrate electrode sides will then be unformly distributed. With this arrangement, excellent uniformity of film thickness can be realized when thin films are formed.
Abstract
Description
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59-60344 | 1984-03-28 | ||
JP59060344A JPH0644554B2 (en) | 1984-03-28 | 1984-03-28 | Plasma CVD equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
US4633811A true US4633811A (en) | 1987-01-06 |
Family
ID=13139447
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US06/691,861 Expired - Lifetime US4633811A (en) | 1984-03-28 | 1985-01-16 | Plasma CVD apparatus |
Country Status (2)
Country | Link |
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US (1) | US4633811A (en) |
JP (1) | JPH0644554B2 (en) |
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3802852A1 (en) * | 1988-02-01 | 1989-08-03 | Leybold Ag | Device for coating a substrate with a material obtained from a plasma |
FR2636079A1 (en) * | 1988-09-06 | 1990-03-09 | Schott Glaswerke | METHOD FOR COATING SUBSTRATES BY VAPOR PHASE DEPOSITION |
US5039376A (en) * | 1989-09-19 | 1991-08-13 | Stefan Zukotynski | Method and apparatus for the plasma etching, substrate cleaning, or deposition of materials by D.C. glow discharge |
US5041201A (en) * | 1988-09-16 | 1991-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing method and apparatus |
US5653810A (en) * | 1991-10-29 | 1997-08-05 | Canon Kabushiki Kaisha | Apparatus for forming metal film and process for forming metal film |
DE19808206A1 (en) * | 1998-02-27 | 1999-09-02 | Gesche | Low pressure gas discharge treatment of wafers for lacquer removal, cleaning or etching |
US6042686A (en) * | 1995-06-30 | 2000-03-28 | Lam Research Corporation | Power segmented electrode |
WO2000032841A1 (en) * | 1998-12-01 | 2000-06-08 | Sk Corporation | Apparatus for forming thin film |
US6076481A (en) * | 1996-04-03 | 2000-06-20 | Canon Kabushiki Kaisha | Plasma processing apparatus and plasma processing method |
US6198067B1 (en) * | 1998-12-28 | 2001-03-06 | Nippon Mektron, Ltd. | Plasma processing device for circuit supports |
US6451160B1 (en) * | 1999-03-12 | 2002-09-17 | Sharp Kabushiki Kaisha | Plasma generation apparatus with a conductive connection member that electrically connects the power source to the electrode |
US20030079983A1 (en) * | 2000-02-25 | 2003-05-01 | Maolin Long | Multi-zone RF electrode for field/plasma uniformity control in capacitive plasma sources |
US20040187785A1 (en) * | 2003-03-24 | 2004-09-30 | Sharp Kabushiki Kaisha | Deposition apparatus and deposition method |
KR100489643B1 (en) * | 1997-11-05 | 2005-09-06 | 에스케이 주식회사 | Automation System of Thin Film Manufacturing Equipment |
US20060087211A1 (en) * | 2004-10-22 | 2006-04-27 | Sharp Kabushiki Kaisha | Plasma processing apparatus |
US20060151319A1 (en) * | 2005-01-13 | 2006-07-13 | Sharp Kabushiki Kaish | Plasma processing apparatus and semiconductor device manufactured by the same apparatus |
US20060191480A1 (en) * | 2005-01-13 | 2006-08-31 | Sharp Kabushiki Kaisha | Plasma processing apparatus and semiconductor device manufactured by the same apparatus |
US20100075489A1 (en) * | 2007-01-22 | 2010-03-25 | Yuichiro Sasaki | Method for producing semiconductor device and semiconductor producing apparatus |
US20100199913A1 (en) * | 2007-11-21 | 2010-08-12 | Ngk Insulators, Ltd. | Film deposition apparatus |
US20110088849A1 (en) * | 2008-05-21 | 2011-04-21 | Sharp Kabushiki Kaisha | Plasma processing apparatus |
EP2327811A1 (en) * | 2008-09-26 | 2011-06-01 | NGK Insulators, Ltd. | Film forming apparatus |
US20110300694A1 (en) * | 2008-11-12 | 2011-12-08 | Ulvac, Inc. | Electrode circuit, film formation device, electrode unit, and film formation method |
WO2020208146A1 (en) * | 2019-04-10 | 2020-10-15 | Plasmetrex Gmbh | Wafer boat and treatment device for wafers |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02101744A (en) * | 1988-10-11 | 1990-04-13 | Semiconductor Energy Lab Co Ltd | Plasma reaction process |
US4958592A (en) * | 1988-08-22 | 1990-09-25 | General Electric Company | Resistance heater for diamond production by CVD |
JPH02101745A (en) * | 1988-10-11 | 1990-04-13 | Semiconductor Energy Lab Co Ltd | Plasma reaction apparatus |
US5225375A (en) * | 1991-05-20 | 1993-07-06 | Process Technology (1988) Limited | Plasma enhanced chemical vapor processing of semiconductor substrates |
JP4659238B2 (en) * | 2001-03-06 | 2011-03-30 | 株式会社カネカ | Method for forming semiconductor layer |
JP4870608B2 (en) * | 2007-04-12 | 2012-02-08 | 株式会社アルバック | Deposition equipment |
KR101362811B1 (en) * | 2008-02-11 | 2014-02-14 | (주)소슬 | Apparatus for supporting substrate and apparatus for treating substrate having the same |
DE102014011933A1 (en) * | 2014-08-14 | 2016-02-18 | Manz Ag | Plasma treatment apparatus and method for surface treatment of substrates |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4292153A (en) * | 1979-03-19 | 1981-09-29 | Fujitsu Limited | Method for processing substrate materials by means of plasma treatment |
US4381965A (en) * | 1982-01-06 | 1983-05-03 | Drytek, Inc. | Multi-planar electrode plasma etching |
US4464223A (en) * | 1983-10-03 | 1984-08-07 | Tegal Corp. | Plasma reactor apparatus and method |
US4478173A (en) * | 1983-04-18 | 1984-10-23 | Energy Conversion Devices, Inc. | Method and apparatus for sensing and controlling the intensity of energy in a deposition system |
US4500563A (en) * | 1982-12-15 | 1985-02-19 | Pacific Western Systems, Inc. | Independently variably controlled pulsed R.F. plasma chemical vapor processing |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5877225A (en) * | 1981-11-04 | 1983-05-10 | Semiconductor Energy Lab Co Ltd | Manufacturing device of semiconductor device |
-
1984
- 1984-03-28 JP JP59060344A patent/JPH0644554B2/en not_active Expired - Lifetime
-
1985
- 1985-01-16 US US06/691,861 patent/US4633811A/en not_active Expired - Lifetime
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4292153A (en) * | 1979-03-19 | 1981-09-29 | Fujitsu Limited | Method for processing substrate materials by means of plasma treatment |
US4381965A (en) * | 1982-01-06 | 1983-05-03 | Drytek, Inc. | Multi-planar electrode plasma etching |
US4500563A (en) * | 1982-12-15 | 1985-02-19 | Pacific Western Systems, Inc. | Independently variably controlled pulsed R.F. plasma chemical vapor processing |
US4478173A (en) * | 1983-04-18 | 1984-10-23 | Energy Conversion Devices, Inc. | Method and apparatus for sensing and controlling the intensity of energy in a deposition system |
US4464223A (en) * | 1983-10-03 | 1984-08-07 | Tegal Corp. | Plasma reactor apparatus and method |
US4464223B1 (en) * | 1983-10-03 | 1991-04-09 | Tegal Corp |
Cited By (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3802852A1 (en) * | 1988-02-01 | 1989-08-03 | Leybold Ag | Device for coating a substrate with a material obtained from a plasma |
FR2636079A1 (en) * | 1988-09-06 | 1990-03-09 | Schott Glaswerke | METHOD FOR COATING SUBSTRATES BY VAPOR PHASE DEPOSITION |
US5017404A (en) * | 1988-09-06 | 1991-05-21 | Schott Glaswerke | Plasma CVD process using a plurality of overlapping plasma columns |
US5041201A (en) * | 1988-09-16 | 1991-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing method and apparatus |
US5039376A (en) * | 1989-09-19 | 1991-08-13 | Stefan Zukotynski | Method and apparatus for the plasma etching, substrate cleaning, or deposition of materials by D.C. glow discharge |
US5653810A (en) * | 1991-10-29 | 1997-08-05 | Canon Kabushiki Kaisha | Apparatus for forming metal film and process for forming metal film |
EP0871975B1 (en) * | 1995-06-30 | 2003-08-20 | Lam Research Corporation | Power segmented electrode |
US6042686A (en) * | 1995-06-30 | 2000-03-28 | Lam Research Corporation | Power segmented electrode |
US6239403B1 (en) | 1995-06-30 | 2001-05-29 | Lam Research Corporation | Power segmented electrode |
US6076481A (en) * | 1996-04-03 | 2000-06-20 | Canon Kabushiki Kaisha | Plasma processing apparatus and plasma processing method |
KR100489643B1 (en) * | 1997-11-05 | 2005-09-06 | 에스케이 주식회사 | Automation System of Thin Film Manufacturing Equipment |
DE19808206A1 (en) * | 1998-02-27 | 1999-09-02 | Gesche | Low pressure gas discharge treatment of wafers for lacquer removal, cleaning or etching |
WO2000032841A1 (en) * | 1998-12-01 | 2000-06-08 | Sk Corporation | Apparatus for forming thin film |
US6198067B1 (en) * | 1998-12-28 | 2001-03-06 | Nippon Mektron, Ltd. | Plasma processing device for circuit supports |
US6451160B1 (en) * | 1999-03-12 | 2002-09-17 | Sharp Kabushiki Kaisha | Plasma generation apparatus with a conductive connection member that electrically connects the power source to the electrode |
US20030079983A1 (en) * | 2000-02-25 | 2003-05-01 | Maolin Long | Multi-zone RF electrode for field/plasma uniformity control in capacitive plasma sources |
US20040187785A1 (en) * | 2003-03-24 | 2004-09-30 | Sharp Kabushiki Kaisha | Deposition apparatus and deposition method |
US7927455B2 (en) | 2004-10-22 | 2011-04-19 | Sharp Kabushiki Kaisha | Plasma processing apparatus |
EP1650326A3 (en) * | 2004-10-22 | 2007-03-14 | Sharp Kabushiki Kaisha | Plasma processing apparatus |
US20060087211A1 (en) * | 2004-10-22 | 2006-04-27 | Sharp Kabushiki Kaisha | Plasma processing apparatus |
US8092640B2 (en) | 2005-01-13 | 2012-01-10 | Sharp Kabushiki Kaisha | Plasma processing apparatus and semiconductor device manufactured by the same apparatus |
US20060191480A1 (en) * | 2005-01-13 | 2006-08-31 | Sharp Kabushiki Kaisha | Plasma processing apparatus and semiconductor device manufactured by the same apparatus |
US7540257B2 (en) * | 2005-01-13 | 2009-06-02 | Sharp Kabushiki Kaisha | Plasma processing apparatus and semiconductor device manufactured by the same apparatus |
US20060151319A1 (en) * | 2005-01-13 | 2006-07-13 | Sharp Kabushiki Kaish | Plasma processing apparatus and semiconductor device manufactured by the same apparatus |
US20100075489A1 (en) * | 2007-01-22 | 2010-03-25 | Yuichiro Sasaki | Method for producing semiconductor device and semiconductor producing apparatus |
US7754503B2 (en) * | 2007-01-22 | 2010-07-13 | Panasonic Corporation | Method for producing semiconductor device and semiconductor producing apparatus |
US20100199913A1 (en) * | 2007-11-21 | 2010-08-12 | Ngk Insulators, Ltd. | Film deposition apparatus |
US20110088849A1 (en) * | 2008-05-21 | 2011-04-21 | Sharp Kabushiki Kaisha | Plasma processing apparatus |
EP2327811A1 (en) * | 2008-09-26 | 2011-06-01 | NGK Insulators, Ltd. | Film forming apparatus |
EP2327811A4 (en) * | 2008-09-26 | 2012-07-04 | Ngk Insulators Ltd | Film forming apparatus |
US20110300694A1 (en) * | 2008-11-12 | 2011-12-08 | Ulvac, Inc. | Electrode circuit, film formation device, electrode unit, and film formation method |
WO2020208146A1 (en) * | 2019-04-10 | 2020-10-15 | Plasmetrex Gmbh | Wafer boat and treatment device for wafers |
Also Published As
Publication number | Publication date |
---|---|
JPS60202929A (en) | 1985-10-14 |
JPH0644554B2 (en) | 1994-06-08 |
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