US4859303A - Method and apparatus for removing coating from substrate - Google Patents
Method and apparatus for removing coating from substrate Download PDFInfo
- Publication number
- US4859303A US4859303A US07/106,213 US10621387A US4859303A US 4859303 A US4859303 A US 4859303A US 10621387 A US10621387 A US 10621387A US 4859303 A US4859303 A US 4859303A
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- US
- United States
- Prior art keywords
- gas
- activated
- substrate
- activated gas
- walls
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B44—DECORATIVE ARTS
- B44D—PAINTING OR ARTISTIC DRAWING, NOT OTHERWISE PROVIDED FOR; PRESERVING PAINTINGS; SURFACE TREATMENT TO OBTAIN SPECIAL ARTISTIC SURFACE EFFECTS OR FINISHES
- B44D3/00—Accessories or implements for use in connection with painting or artistic drawing, not otherwise provided for; Methods or devices for colour determination, selection, or synthesis, e.g. use of colour tables
- B44D3/16—Implements or apparatus for removing dry paint from surfaces, e.g. by scraping, by burning
- B44D3/166—Implements or apparatus for removing dry paint from surfaces, e.g. by scraping, by burning by heating, e.g. by burning
- B44D3/168—Implements or apparatus for removing dry paint from surfaces, e.g. by scraping, by burning by heating, e.g. by burning by electrically heating
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/004—Charge control of objects or beams
Definitions
- the present invention relates to a method and apparatus for removing a layer of coated material from a substrate.
- the present invention seeks to provide a method and apparatus for removing a layer of coating material from a substrate which reduces positive ion contamination of the substrate.
- the positively charged species may be removed from the activated gas by bringing the activated gas into contact with a grounded surface to discharge ionized species in the activated gas. This may be done by passing the activated gas through a diffuser comprising electrically grounded conducting walls defining a chamber, one of the walls having at least one inlet aperture for permitting activated gas to flow into the chamber and another of the walls having at least one outlet aperture for permitting discharged activated gas to flow out of the chamber and onto the coating.
- the inlet apertures and outlet apertures are arranged in offset patterns to induce turbulence in the activated gas as it flows through the chamber. The turbulence ensures adequate contact of the activated gas with the conducting walls of the chamber, and provides a relatively uniform flow of discharged activated gas onto the coating material.
- a diffuser for discharging and diffusing an activated gas comprising electrically conducting walls defining a chamber, one of said walls having at least one inlet aperture and another of said walls having at least one outlet aperture, said inlet and outlet apertures being arranged in offset positions, and means for mounting the diffuser within a reaction vessel.
- positively charged species may be removed from the activated gas by bringing the activated gas into contact with a negatively charged surface which attracts and discharges the positively charged species.
- FIG. 2 is a cross-sectional view of part of a conventional plasma stripping apparatus
- FIG. 3 is a cross-sectional view of part of a plasma stripping apparatus according to a first embodiment
- FIG. 4 is a plan view of a diffuser used in the first embodiment
- FIG. 5 is an elevational view, partly in cross-section, of the diffuser of FIG. 4, the section taken on section line V--V of FIG. 4;
- FIG. 6 is a cross-sectional view of part of a plasma stripping apparatus according to a second embodiment
- FIG. 7 is a plan view of a filter used in the second embodiment.
- FIG. 8 is an elevational view, partly in cross-section, of the filter of FIG. 7, the section taken on section line VII--VII of FIG. 7.
- the plasma stripping apparatus 20 comprises a reaction vessel 22 having an inlet 24 and an exhaust outlet 26. Within the vessel 22 a support 28 is provided for supporting the substrate 12 in a support position between the inlet 24 and the exhaust outlet 26. The support 28 is heated by means of a heater 29, in thermal contact with the support, so as to heat the substrate 12.
- the MTI DPR Afterglo machine manufactured by Machine Technologies, Inc. of Parsipanny, New Jersey, is one such plasma stripping apparatus. (Afterglo is a trade mark of Machine Technologies, Inc.)
- the inlet 24 is connected to a plasma generation means (not shown) which applies a microwave frequency electric field to a gas to generate a plasma of the gas.
- the resulting activated gas is drawn through the inlet 24 by means of a pressure differential and into the vessel 22 to impinge upon a coating layer 10 on a substrate 12 placed on the support 28 and heated by the heater 29.
- the gas may be a reactive gas, such as O 2 , CF 4 , SF 6 or a freon gas.
- gases when activated, chemically react with polymer photoresist to break it down and form gaseous products.
- the gaseous products are drawn from the vessel 22 through the exhaust outlet 26.
- positively charged species of the activated gas tend to accumulate at an outer surface 16 (see FIG. 1) of the layer 10 of photoresist.
- the accumulated positively charged species apply an electric field across the layer 10 which drives mobile positively charged ions (such as Na, Li or K ions) commonly found in polymer photoresists through the interface 18 (see FIG. 1) between the photoresist and the underlying substrate, thereby contaminating the substrate.
- the contamination remains when the stripping operation has been completed.
- the contamination is particularly significant where the substrate 12 includes an oxide layer immediately below the photoresist, since such oxide layers are relatively receptive to the contaminants and have physical properties which are significantly altered by the presence of the contaminants.
- a plasma stripping apparatus inhibits the above problem.
- the apparatus is basically constructed in a manner similar to the apparatus of FIG. 2, and in the following description the same reference numerals will be used for such parts as were described with reference to FIG. 2.
- the first embodiment differs from the prior arrangement in that a diffuser 30 is mounted within the vessel 22 between the inlet 24 and the position in which the support 28 supports the substrate 12.
- the diffuser 30, shown in more detail in FIGS. 4 and 5, comprises electrically conducting walls 52, 54, 56 of aluminum defining a cylindrical chamber 58.
- the diffuser 30 is provided with a pair of arms 42 extending outwardly of the chamber 58 which act as means for mounting the diffuser in the vessel 22.
- An uppermost wall 52 has several openings in the form of inlet apertures 44, and a lowermost wall 56 has several openings in the form of outlet apertures 46.
- the inlet apertures 44 are arranged in a first pattern, and the outlet apertures 46 are arranged in a second pattern offset from the first pattern so that there is no straight line path from the vessel inlet 24 through an inlet aperture 44 and an outlet aperture 46 and onto a substrate 12 mounted in the support position within the vessel 22.
- the diffuser 20 is mounted in the vessel 22 and electrically connected to ground.
- the inlet 24 is connected to plasma generation means (not shown), and activated gas is drawn from the plasma generation means through the inlet 24 and onto the diffuser 30 by means of a pressure differential.
- the activated gas enters the chamber 58 via the inlet apertures 44. Because the outlet apertures 46 are not aligned with corresponding inlet apertures 44, turbulence is induced in the ionized gas, which is thereby brought into contact with the grounded electrically conductive surfaces of the diffuser 30.
- Such contact discharges charged species in the gas, to convert the charged species to activated uncharged gas atoms or molecules.
- the diffuser provides means for removing positively charged species from the activated gas.
- the uncharged, activated atoms or molecules pass through the outlet apertures 46 and impinge upon the layer 10 of photoresist.
- the activated gas atoms or molecules chemically react with the photoresist to form gaseous products, thereby stripping the photoresist from the substrate.
- there is little or no build up of positive charge on the exposed surface of the photoresist so fewer mobile positively charged ions are driven from the photoresist into the underlying substrate. As a result, contamination of the substrate is reduced.
- a plasma stripping apparatus is constructed in a manner similar to the first embodiment, except that the diffuser 30 of the first embodiment is replaced with an electrostatic filter 60 mounted within the vessel 22 between the inlet 24 and the position in which the support 28 supports the substrate 12.
- the filter 60 shown in more detail in FIGS. 7 and 8, comprises an annular aluminum frame 72 provided with a pair of arms 74 extending outwardly of the frame.
- the arms 74 provide means for mounting the filter in the vessel 22.
- the filter also comprises a plurality of parallel aluminum plates 76 extending along chords of the annulus 72. The plates 76 are spaced apart to provide openings therebetween.
- the filter 60 is mounted in the vessel 22 and provided with a negative electric charge.
- the inlet 24 is connected to plasma generation means (not shown), and activated gas is drawn from the plasma generation means through the inlet 24 and onto the filter 60 by means of a pressure differential. Positively charged species of the activated gas are attracted to the negatively charged surfaces of the plates 76 of the filter 60. Because positively charged species of the activated gas are removed by the filter 60, there is little or no build up of positive charge on the exposed surface of the photoresist, so there is a reduced tendency to drive mobile positively charged ions from the photoresist into the substrate. Consequently, contamination of the substrate is reduced.
- the substrate 12 may be provided with a positive charge to attract negatively charged species of the activated gas toward the substrate and to further discourage migration of positive ions from the photoresist to the substrate.
- the diffuser 30 and filter 60 described above may be constructed of any suitable material so long as adequately conducting surfaces are provided.
- metal, passivated metal or other materials coated with passivated conducting or semiconducting material may be used. Where metal is used, annealing following machining operations is advantageous to prevent cracking and eliminate inherent material faulting.
- the diffuser 30 may adopt any suitable shape which provides adequate surface contact with the activated gas for removal of positively charged species.
- the reactive gas may be activated by methods other than application of microwave frequency electric fields.
- the gas could be activated by exposure to ultraviolet light, although if this method is employed care should be taken to minimize exposure of the substrate to the ultraviolet light since the ultraviolet light may damage the surface of the substrate.
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/106,213 US4859303A (en) | 1987-10-09 | 1987-10-09 | Method and apparatus for removing coating from substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/106,213 US4859303A (en) | 1987-10-09 | 1987-10-09 | Method and apparatus for removing coating from substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
US4859303A true US4859303A (en) | 1989-08-22 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US07/106,213 Expired - Lifetime US4859303A (en) | 1987-10-09 | 1987-10-09 | Method and apparatus for removing coating from substrate |
Country Status (1)
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US (1) | US4859303A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5021919A (en) * | 1988-10-14 | 1991-06-04 | Leybold Aktiengesellschaft | Device for the generation of electrically charged and/or uncharged particles |
US5180467A (en) * | 1990-08-08 | 1993-01-19 | Vlsi Technology, Inc. | Etching system having simplified diffuser element removal |
US5518572A (en) * | 1991-06-10 | 1996-05-21 | Kawasaki Steel Corporation | Plasma processing system and method |
US5645645A (en) * | 1995-04-07 | 1997-07-08 | Board Of Trustees Operating Michigan State University | Method and apparatus for plasma treatment of a surface |
US5783100A (en) * | 1994-03-16 | 1998-07-21 | Micron Display Technology, Inc. | Method of high density plasma etching for semiconductor manufacture |
EP1118692A1 (en) * | 2000-01-18 | 2001-07-25 | Asm Japan K.K. | Remote plasma apparatus |
US20100151694A1 (en) * | 2008-12-12 | 2010-06-17 | Mattson Technology, Inc. | Method and apparatus for growing thin oxide films on silicon while minimizing impact on existing structures |
EP2870835A4 (en) * | 2012-07-09 | 2016-03-09 | Tribofilm Res Inc | Activated gaseous species for improved lubrication |
Citations (12)
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US3879597A (en) * | 1974-08-16 | 1975-04-22 | Int Plasma Corp | Plasma etching device and process |
US4158589A (en) * | 1977-12-30 | 1979-06-19 | International Business Machines Corporation | Negative ion extractor for a plasma etching apparatus |
US4358686A (en) * | 1980-01-25 | 1982-11-09 | Mitsubishi Denki Kabushiki Kaisha | Plasma reaction device |
US4512868A (en) * | 1983-07-08 | 1985-04-23 | Fujitsu Limited | Microwave plasma processing apparatus |
US4540466A (en) * | 1983-05-11 | 1985-09-10 | Semiconductor Research Foundation | Method of fabricating semiconductor device by dry process utilizing photochemical reaction, and apparatus therefor |
US4595484A (en) * | 1985-12-02 | 1986-06-17 | International Business Machines Corporation | Reactive ion etching apparatus |
US4609428A (en) * | 1984-07-23 | 1986-09-02 | Fujitsu Limited | Method and apparatus for microwave plasma anisotropic dry etching |
US4631105A (en) * | 1985-04-22 | 1986-12-23 | Branson International Plasma Corporation | Plasma etching apparatus |
US4673456A (en) * | 1985-09-17 | 1987-06-16 | Machine Technology, Inc. | Microwave apparatus for generating plasma afterglows |
US4699689A (en) * | 1985-05-17 | 1987-10-13 | Emergent Technologies Corporation | Method and apparatus for dry processing of substrates |
US4718974A (en) * | 1987-01-09 | 1988-01-12 | Ultraphase Equipment, Inc. | Photoresist stripping apparatus using microwave pumped ultraviolet lamp |
US4718976A (en) * | 1982-03-31 | 1988-01-12 | Fujitsu Limited | Process and apparatus for plasma treatment |
-
1987
- 1987-10-09 US US07/106,213 patent/US4859303A/en not_active Expired - Lifetime
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3879597A (en) * | 1974-08-16 | 1975-04-22 | Int Plasma Corp | Plasma etching device and process |
US4158589A (en) * | 1977-12-30 | 1979-06-19 | International Business Machines Corporation | Negative ion extractor for a plasma etching apparatus |
US4358686A (en) * | 1980-01-25 | 1982-11-09 | Mitsubishi Denki Kabushiki Kaisha | Plasma reaction device |
US4718976A (en) * | 1982-03-31 | 1988-01-12 | Fujitsu Limited | Process and apparatus for plasma treatment |
US4540466A (en) * | 1983-05-11 | 1985-09-10 | Semiconductor Research Foundation | Method of fabricating semiconductor device by dry process utilizing photochemical reaction, and apparatus therefor |
US4512868A (en) * | 1983-07-08 | 1985-04-23 | Fujitsu Limited | Microwave plasma processing apparatus |
US4609428A (en) * | 1984-07-23 | 1986-09-02 | Fujitsu Limited | Method and apparatus for microwave plasma anisotropic dry etching |
US4631105A (en) * | 1985-04-22 | 1986-12-23 | Branson International Plasma Corporation | Plasma etching apparatus |
US4699689A (en) * | 1985-05-17 | 1987-10-13 | Emergent Technologies Corporation | Method and apparatus for dry processing of substrates |
US4673456A (en) * | 1985-09-17 | 1987-06-16 | Machine Technology, Inc. | Microwave apparatus for generating plasma afterglows |
US4595484A (en) * | 1985-12-02 | 1986-06-17 | International Business Machines Corporation | Reactive ion etching apparatus |
US4718974A (en) * | 1987-01-09 | 1988-01-12 | Ultraphase Equipment, Inc. | Photoresist stripping apparatus using microwave pumped ultraviolet lamp |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5021919A (en) * | 1988-10-14 | 1991-06-04 | Leybold Aktiengesellschaft | Device for the generation of electrically charged and/or uncharged particles |
US5180467A (en) * | 1990-08-08 | 1993-01-19 | Vlsi Technology, Inc. | Etching system having simplified diffuser element removal |
US5518572A (en) * | 1991-06-10 | 1996-05-21 | Kawasaki Steel Corporation | Plasma processing system and method |
US5783100A (en) * | 1994-03-16 | 1998-07-21 | Micron Display Technology, Inc. | Method of high density plasma etching for semiconductor manufacture |
US5645645A (en) * | 1995-04-07 | 1997-07-08 | Board Of Trustees Operating Michigan State University | Method and apparatus for plasma treatment of a surface |
US6736147B2 (en) | 2000-01-18 | 2004-05-18 | Asm Japan K.K. | Semiconductor-processing device provided with a remote plasma source for self-cleaning |
EP1118692A1 (en) * | 2000-01-18 | 2001-07-25 | Asm Japan K.K. | Remote plasma apparatus |
US20040144400A1 (en) * | 2000-01-18 | 2004-07-29 | Kiyoshi Satoh | Semiconductor processing with a remote plasma source for self-cleaning |
US20040144489A1 (en) * | 2000-01-18 | 2004-07-29 | Kiyoshi Satoh | Semiconductor processing device provided with a remote plasma source for self-cleaning |
US20070227554A1 (en) * | 2000-01-18 | 2007-10-04 | Asm Japan K.K. | Semiconductor processing with a remote plasma source for self-cleaning |
KR100767762B1 (en) * | 2000-01-18 | 2007-10-17 | 에이에스엠 저펜 가부시기가이샤 | A CVD semiconductor-processing device provided with a remote plasma source for self cleaning |
US20100151694A1 (en) * | 2008-12-12 | 2010-06-17 | Mattson Technology, Inc. | Method and apparatus for growing thin oxide films on silicon while minimizing impact on existing structures |
US8236706B2 (en) | 2008-12-12 | 2012-08-07 | Mattson Technology, Inc. | Method and apparatus for growing thin oxide films on silicon while minimizing impact on existing structures |
EP2870835A4 (en) * | 2012-07-09 | 2016-03-09 | Tribofilm Res Inc | Activated gaseous species for improved lubrication |
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Date | Code | Title | Description |
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AS | Assignment |
Owner name: NORTHERN TELECOM LIMITED, P.O. BOX 6123, STATION A Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNORS:KALNITSKY, ALEXANDER;ELLUL, JOSEPH P.;POIRIER, JACQUES G.;AND OTHERS;REEL/FRAME:004794/0560 Effective date: 19871002 Owner name: NORTHERN TELECOM LIMITED, P.O. BOX 6123, STATION A Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KALNITSKY, ALEXANDER;ELLUL, JOSEPH P.;POIRIER, JACQUES G.;AND OTHERS;REEL/FRAME:004794/0560 Effective date: 19871002 |
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Owner name: NORTEL NETWORKS CORPORATION, CANADA Free format text: CHANGE OF NAME;ASSIGNOR:NORTHERN TELECOM LIMITED;REEL/FRAME:010567/0001 Effective date: 19990429 |
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Owner name: NORTEL NETWORKS LIMITED, CANADA Free format text: CHANGE OF NAME;ASSIGNOR:NORTEL NETWORKS CORPORATION;REEL/FRAME:011195/0706 Effective date: 20000830 Owner name: NORTEL NETWORKS LIMITED,CANADA Free format text: CHANGE OF NAME;ASSIGNOR:NORTEL NETWORKS CORPORATION;REEL/FRAME:011195/0706 Effective date: 20000830 |
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