US4920542A - Tunable semiconductor laser - Google Patents
Tunable semiconductor laser Download PDFInfo
- Publication number
- US4920542A US4920542A US07/351,893 US35189389A US4920542A US 4920542 A US4920542 A US 4920542A US 35189389 A US35189389 A US 35189389A US 4920542 A US4920542 A US 4920542A
- Authority
- US
- United States
- Prior art keywords
- grating
- section
- amplification
- light
- phase tuning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06258—Controlling the frequency of the radiation with DFB-structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/106—Comprising an active region having a varying composition or cross-section in a specific direction varying thickness along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
(L.sub.2 +L.sub.3)γ.sub.2 δμ.sub.2 =L.sub.3 Γ.sub.3 δμ.sub.3 (2)
______________________________________ Wavelength in Layer Micrometers Composition ______________________________________ C1 0.92 Inp C2 1.55 Ga.sub.0.42 In.sub.0.58 A3.sub.0.90 P.sub.0.10 C3 1.35 Ga.sub.0.31 In.sub.0.60 A3.sub.0.68 P.sub.0.32 C4 0.92 Inp ______________________________________
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8815467A FR2639773B1 (en) | 1988-11-25 | 1988-11-25 | TUNABLE SEMICONDUCTOR LASER |
FR8815467 | 1988-11-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
US4920542A true US4920542A (en) | 1990-04-24 |
Family
ID=9372275
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US07/351,893 Expired - Lifetime US4920542A (en) | 1988-11-25 | 1989-03-22 | Tunable semiconductor laser |
Country Status (5)
Country | Link |
---|---|
US (1) | US4920542A (en) |
EP (1) | EP0370443B1 (en) |
JP (1) | JP2776922B2 (en) |
DE (1) | DE68909747T2 (en) |
FR (1) | FR2639773B1 (en) |
Cited By (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4995048A (en) * | 1988-12-16 | 1991-02-19 | U.S. Philips Corp. | Tunable semiconductor diode laser with distributed reflection |
US5008893A (en) * | 1989-02-15 | 1991-04-16 | Siemens Aktiengesellschaft | Tunable semiconductor laser |
US5015099A (en) * | 1989-03-23 | 1991-05-14 | Anritsu Corporation | Differential absorption laser radar gas detection apparatus having tunable wavelength single mode semiconductor laser source |
US5070509A (en) * | 1990-08-09 | 1991-12-03 | Eastman Kodak Company | Surface emitting, low threshold (SELTH) laser diode |
US5088097A (en) * | 1990-04-04 | 1992-02-11 | Canon Kabushiki Kaisha | Semiconductor laser element capable of changing emission wavelength, and method of driving the same |
US5157681A (en) * | 1990-06-27 | 1992-10-20 | Mitsubishi Denki Kabushiki Kaisha | Wavelength-tunable distributed Bragg reflector semiconductor laser |
US5177758A (en) * | 1989-06-14 | 1993-01-05 | Hitachi, Ltd. | Semiconductor laser device with plural active layers and changing optical properties |
US5191590A (en) * | 1991-01-23 | 1993-03-02 | U.S. Philips Corp. | Semiconductor diode laser with monitor diode |
US5283799A (en) * | 1991-02-27 | 1994-02-01 | Alcatel N.V. | Semiconductor laser with a saturable absorber |
US5325382A (en) * | 1990-09-28 | 1994-06-28 | Nec Corporation | Method and electrode arrangement for inducing flat frequency modulation response in semiconductor laser |
US5359613A (en) * | 1991-08-30 | 1994-10-25 | U.S. Philips Corporation | Tunable laser oscillator |
US5371757A (en) * | 1993-10-22 | 1994-12-06 | The United States Of America As Represented By The Secretary Of The Air Force | Integrated semiconductor laser oscillator and off-axis amplifier |
US5434879A (en) * | 1993-01-19 | 1995-07-18 | Alcatel N.V. | Gain-switched semiconductor light pulse source, and a soliton transmission system |
US5789274A (en) * | 1994-07-15 | 1998-08-04 | Nec Corporation | Wavelength-tunable semiconductor laser and fabrication process thereof |
US5832014A (en) * | 1997-02-11 | 1998-11-03 | Lucent Technologies Inc. | Wavelength stabilization in tunable semiconductor lasers |
US5852304A (en) * | 1993-08-04 | 1998-12-22 | Hitachi, Ltd. | Optical communication system |
US5889801A (en) * | 1997-02-14 | 1999-03-30 | Nec Corporation | Driving method for tunable semiconductor laser diode, tunable light source device and driving method for the same |
US6031860A (en) * | 1996-08-22 | 2000-02-29 | Canon Kabushiki Kaisha | Optical device capable of switching output intensity of light of predetermined polarized wave, optical transmitter using the device, network using the transmitter, and method of driving optical device |
US6088373A (en) * | 1999-02-17 | 2000-07-11 | Lucent Technologies Inc. | Hybrid tunable Bragg laser |
US20010005388A1 (en) * | 1999-12-22 | 2001-06-28 | Takaaki Hirata | SHG laser light source and method of modulation for use therewith |
EP1172905A1 (en) * | 2000-07-11 | 2002-01-16 | Interuniversitair Microelektronica Centrum Vzw | A method and apparatus for controlling a laser structure |
GB2369491A (en) * | 2000-11-28 | 2002-05-29 | Kamelian Ltd | Tunable semiconductor laser |
EP1223647A1 (en) * | 2001-01-12 | 2002-07-17 | Interuniversitair Micro-Elektronica Centrum Vzw | A method and apparatus for controlling a laser structure |
US20030011851A1 (en) * | 2001-06-29 | 2003-01-16 | John Trezza | Redundant optical device array |
US6728290B1 (en) | 2000-09-13 | 2004-04-27 | The Board Of Trustees Of The University Of Illinois | Current biased dual DBR grating semiconductor laser |
US6826206B1 (en) * | 1999-02-17 | 2004-11-30 | Adc Telecommunications, Inc. | Method of characterizing a tuneable laser |
US6865195B2 (en) * | 2000-08-04 | 2005-03-08 | Avanex Corporation | Edge-emitting semiconductor tunable laser |
US20050078724A1 (en) * | 2002-09-03 | 2005-04-14 | Massara Benedict Aeneas | Single mode distributed feedback lasers |
US20060222033A1 (en) * | 2005-03-31 | 2006-10-05 | Fujitsu Limited | Optical semiconductor device and driving method thereof |
CN100372134C (en) * | 2003-07-23 | 2008-02-27 | 厦门市三安光电股份有限公司 | A Prague reflector structure for LED |
US7573928B1 (en) * | 2003-09-05 | 2009-08-11 | Santur Corporation | Semiconductor distributed feedback (DFB) laser array with integrated attenuator |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0498736A3 (en) * | 1991-02-08 | 1993-04-14 | Fujitsu Limited | Dfb laser diode having a modified profile of linewidth enhancement factor |
FR2734676B1 (en) * | 1995-05-23 | 1997-08-08 | Labeyrie Antoine | LASER EMISSION OR RECEPTION METHOD AND DEVICES FOR OPTICAL TRANSMISSION OF INFORMATION |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59155983A (en) * | 1983-02-24 | 1984-09-05 | Sharp Corp | Manufacture of semiconductor laser element |
JPS6179283A (en) * | 1984-09-26 | 1986-04-22 | Nec Corp | Distributed bragg reflection type semiconductor laser |
JPS61220389A (en) * | 1985-03-26 | 1986-09-30 | Nec Corp | Integrated type semiconductor laser |
US4665528A (en) * | 1983-12-14 | 1987-05-12 | Hitachi, Ltd. | Distributed-feedback semiconductor laser device |
US4680769A (en) * | 1984-11-21 | 1987-07-14 | Bell Communications Research, Inc. | Broadband laser amplifier structure |
EP0246959A1 (en) * | 1986-05-16 | 1987-11-25 | France Telecom | Distributed feedback semiconductor laser having a continuously tunable wavelength |
US4710914A (en) * | 1985-08-29 | 1987-12-01 | Compagnie General D'electricite | Optical fiber telecommunication device |
US4719636A (en) * | 1984-08-24 | 1988-01-12 | Nec Corporation | Wavelength tunable semiconductor laser device provided with control regions |
US4775980A (en) * | 1983-12-14 | 1988-10-04 | Hitachi, Ltd. | Distributed-feedback semiconductor laser device |
US4788690A (en) * | 1985-12-25 | 1988-11-29 | Kokusai Denshin Denwa Kabushiki Kaisha | Distributed feedback semiconductor laser with monitor |
US4815090A (en) * | 1987-03-12 | 1989-03-21 | Kokusai Denshin Denwa Kabushiki Kaisha | Distributed feedback semiconductor laser with monitor |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2526898B2 (en) * | 1987-05-08 | 1996-08-21 | 三菱電機株式会社 | Semiconductor laser and method of using the same |
JPH0831653B2 (en) * | 1987-07-21 | 1996-03-27 | 国際電信電話株式会社 | Semiconductor laser |
-
1988
- 1988-11-25 FR FR8815467A patent/FR2639773B1/en not_active Expired - Fee Related
-
1989
- 1989-03-22 US US07/351,893 patent/US4920542A/en not_active Expired - Lifetime
- 1989-11-20 EP EP89121469A patent/EP0370443B1/en not_active Expired - Lifetime
- 1989-11-20 DE DE89121469T patent/DE68909747T2/en not_active Expired - Fee Related
- 1989-11-24 JP JP1306396A patent/JP2776922B2/en not_active Expired - Fee Related
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59155983A (en) * | 1983-02-24 | 1984-09-05 | Sharp Corp | Manufacture of semiconductor laser element |
US4665528A (en) * | 1983-12-14 | 1987-05-12 | Hitachi, Ltd. | Distributed-feedback semiconductor laser device |
US4775980A (en) * | 1983-12-14 | 1988-10-04 | Hitachi, Ltd. | Distributed-feedback semiconductor laser device |
US4719636A (en) * | 1984-08-24 | 1988-01-12 | Nec Corporation | Wavelength tunable semiconductor laser device provided with control regions |
JPS6179283A (en) * | 1984-09-26 | 1986-04-22 | Nec Corp | Distributed bragg reflection type semiconductor laser |
US4680769A (en) * | 1984-11-21 | 1987-07-14 | Bell Communications Research, Inc. | Broadband laser amplifier structure |
JPS61220389A (en) * | 1985-03-26 | 1986-09-30 | Nec Corp | Integrated type semiconductor laser |
US4710914A (en) * | 1985-08-29 | 1987-12-01 | Compagnie General D'electricite | Optical fiber telecommunication device |
US4788690A (en) * | 1985-12-25 | 1988-11-29 | Kokusai Denshin Denwa Kabushiki Kaisha | Distributed feedback semiconductor laser with monitor |
EP0246959A1 (en) * | 1986-05-16 | 1987-11-25 | France Telecom | Distributed feedback semiconductor laser having a continuously tunable wavelength |
US4802187A (en) * | 1986-05-16 | 1989-01-31 | Bouley Jean Claude | Distributed feedback semiconductor laser of continuously tunable wavelength |
US4815090A (en) * | 1987-03-12 | 1989-03-21 | Kokusai Denshin Denwa Kabushiki Kaisha | Distributed feedback semiconductor laser with monitor |
Non-Patent Citations (34)
Title |
---|
"1.5 μm Wavelength Tunable DBR Lasers with Large Continuous Tuning Ranges and Narrow Spectral Linewidths", Murata et al., Int'l. Conf. on Semiconductor Lasers, p. 122, Boston, Sept. 1988. |
"1.55 μm Wavelength Tunable FBH-DBR Laser", Kotaki et al., Elect. Lett. 23, p. 325, Mar. 1988. |
"Broad Wavelength Tuning Under Single-Mode Oscillation with a Multi-Electrode Distributed Feedback Laser", Yoshikuni et al., Electr. Lett. 22, p. 1153, Oct. 1986. |
"Frequency Modulation and Spectral Charactristics for a 1.5 μm Phase-Tunable DFB Laser", Murata et al., Electr. Lett. 23, p. 12, Jan. 1987. |
"High Performance Tunable 1.5 μm InGaAs/InGaAsP Multiple-Quantum-Well", AT&T Bell Labs., N.J., Int'l. Conf. on Semiconductor Lasers, p. 120, Boston, 1988. |
"Influence of Isolation Resistance on Spectral Linewidth in Wavelength Tunable DBR Laser", Kotaki et al., Int'l. Conference on Semiconductor Laers, p. 128, Boston, Sept. 1988. |
"Lasing Mode & Spectral Linewidth Control by Phase Tunable Distr. Feedback Laser Diodes w/ Double Channel Planar Buried Heterostructure (DFB-DC-PBH LD's)", Kitamura et al., IEEE J. Quant. Elect. QE-21, p. 415, May 1985. |
"Monolithic 1.5 μm Hybrid DFB/DBR Lasers with 5 nm Tuning Range", Westbrook et al., Appl. Phys. Lett. 52, p. 1285, Apr. 1988. |
"Over 720 Ghz (5.8 nm) Frequency Tuning by a 1.5μ DBR Laser with Phase & Bragg Wavelength Control Regions", Murata et al., Elect. Lett. 23, p. 403, Apr. 1987. |
"Spectral Characteristics for a 1.5 μm DBR Laser with Frequency-Tuning Region", Murata et al., IEEE J. Quant. Electron QZ-23, p. 835, June. 1987. |
"Tunable DBR Laser with Wide Tuning Range", Kotaki et al., Elect. Lett. 24, p. 503, Apr. 1988. |
"Tunable Ranges for 1.5 μm Wavelength Tunable DBR Lasers", Murata et al., Elect. Lett. 24, p. 577, May 1988. |
"Wavelength Stabilization of 1.5 μm GalnAsP/InP Bundle-Integrated-Guide Distributed-Bragg-Reflector (BIG-DBR) Lasers Integrated with Wavelength Tuning Region", Tohmori et al., Elect. Lett. 22, p. 138, Jan. 1986. |
"Wavelength Tuning of GalnAsP/InP integrated Laser with Butt-Jointed Built-In Distributed Bragg Reflector", Tohnori et al., Elect. Lett. 19, p. 656, Aug. 1983. |
"Widely Tunable Active Bragg Reflector Integrated Lasers in InGaAsP-InP", Broberg et al., Appl. Phys. Lett. 52, p. 1285, Apr. 1988. |
1.5 m Wavelength Tunable DBR Lasers with Large Continuous Tuning Ranges and Narrow Spectral Linewidths , Murata et al., Int l. Conf. on Semiconductor Lasers, p. 122, Boston, Sept. 1988. * |
1.55 m Wavelength Tunable FBH DBR Laser , Kotaki et al., Elect. Lett. 23, p. 325, Mar. 1988. * |
Broad Wavelength Tuning Under Single Mode Oscillation with a Multi Electrode Distributed Feedback Laser , Yoshikuni et al., Electr. Lett. 22, p. 1153, Oct. 1986. * |
Frequency Modulation and Spectral Charactristics for a 1.5 m Phase Tunable DFB Laser , Murata et al., Electr. Lett. 23, p. 12, Jan. 1987. * |
High Performance Tunable 1.5 m InGaAs/InGaAsP Multiple Quantum Well , AT&T Bell Labs., N.J., Int l. Conf. on Semiconductor Lasers, p. 120, Boston, 1988. * |
Influence of Isolation Resistance on Spectral Linewidth in Wavelength Tunable DBR Laser , Kotaki et al., Int l. Conference on Semiconductor Laers, p. 128, Boston, Sept. 1988. * |
Jacquet et al., "Etude Theorique D'un Laser a Trois Sections Permettant une Emission Monomode Continument Accordable en Longueur d'onde", Journees Nationales d'Optiques Guidee, Lannion (France), 24 Mar. 88. |
Jacquet et al., Etude Th orique D un Laser Trois Sections Permettant une mission Monomode Contin ment Accordable en Longueur d onde , Journe s Nationales d Optiques Guide , Lannion (France), 24 Mar. 88. * |
Jacquet et al., Theoretical Investigation of a Three Section Laser Providing Monomode Emission which is Continuously Tunable in Wavelength, Journ es Nationales d Optiques Guid e, Lannion (France), 24 Mar. 88. * |
Jacquet et al., Theoretical Investigation of a Three-Section Laser Providing Monomode Emission which is Continuously Tunable in Wavelength, Journees Nationales d'Optiques Guidee, Lannion (France), 24 Mar. 88. |
Lasing Mode & Spectral Linewidth Control by Phase Tunable Distr. Feedback Laser Diodes w/ Double Channel Planar Buried Heterostructure (DFB DC PBH LD s) , Kitamura et al., IEEE J. Quant. Elect. QE 21, p. 415, May 1985. * |
Monolithic 1.5 m Hybrid DFB/DBR Lasers with 5 nm Tuning Range , Westbrook et al., Appl. Phys. Lett. 52, p. 1285, Apr. 1988. * |
Over 720 Ghz (5.8 nm) Frequency Tuning by a 1.5 DBR Laser with Phase & Bragg Wavelength Control Regions , Murata et al., Elect. Lett. 23, p. 403, Apr. 1987. * |
Spectral Characteristics for a 1.5 m DBR Laser with Frequency Tuning Region , Murata et al., IEEE J. Quant. Electron QZ 23, p. 835, June. 1987. * |
Tunable DBR Laser with Wide Tuning Range , Kotaki et al., Elect. Lett. 24, p. 503, Apr. 1988. * |
Tunable Ranges for 1.5 m Wavelength Tunable DBR Lasers , Murata et al., Elect. Lett. 24, p. 577, May 1988. * |
Wavelength Stabilization of 1.5 m GalnAsP/InP Bundle Integrated Guide Distributed Bragg Reflector (BIG DBR) Lasers Integrated with Wavelength Tuning Region , Tohmori et al., Elect. Lett. 22, p. 138, Jan. 1986. * |
Wavelength Tuning of GalnAsP/InP integrated Laser with Butt Jointed Built In Distributed Bragg Reflector , Tohnori et al., Elect. Lett. 19, p. 656, Aug. 1983. * |
Widely Tunable Active Bragg Reflector Integrated Lasers in InGaAsP InP , Broberg et al., Appl. Phys. Lett. 52, p. 1285, Apr. 1988. * |
Cited By (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4995048A (en) * | 1988-12-16 | 1991-02-19 | U.S. Philips Corp. | Tunable semiconductor diode laser with distributed reflection |
US5008893A (en) * | 1989-02-15 | 1991-04-16 | Siemens Aktiengesellschaft | Tunable semiconductor laser |
US5015099A (en) * | 1989-03-23 | 1991-05-14 | Anritsu Corporation | Differential absorption laser radar gas detection apparatus having tunable wavelength single mode semiconductor laser source |
US5177758A (en) * | 1989-06-14 | 1993-01-05 | Hitachi, Ltd. | Semiconductor laser device with plural active layers and changing optical properties |
US5088097A (en) * | 1990-04-04 | 1992-02-11 | Canon Kabushiki Kaisha | Semiconductor laser element capable of changing emission wavelength, and method of driving the same |
US5157681A (en) * | 1990-06-27 | 1992-10-20 | Mitsubishi Denki Kabushiki Kaisha | Wavelength-tunable distributed Bragg reflector semiconductor laser |
US5070509A (en) * | 1990-08-09 | 1991-12-03 | Eastman Kodak Company | Surface emitting, low threshold (SELTH) laser diode |
US5325382A (en) * | 1990-09-28 | 1994-06-28 | Nec Corporation | Method and electrode arrangement for inducing flat frequency modulation response in semiconductor laser |
US5191590A (en) * | 1991-01-23 | 1993-03-02 | U.S. Philips Corp. | Semiconductor diode laser with monitor diode |
US5283799A (en) * | 1991-02-27 | 1994-02-01 | Alcatel N.V. | Semiconductor laser with a saturable absorber |
US5359613A (en) * | 1991-08-30 | 1994-10-25 | U.S. Philips Corporation | Tunable laser oscillator |
US5434879A (en) * | 1993-01-19 | 1995-07-18 | Alcatel N.V. | Gain-switched semiconductor light pulse source, and a soliton transmission system |
US5852304A (en) * | 1993-08-04 | 1998-12-22 | Hitachi, Ltd. | Optical communication system |
US5371757A (en) * | 1993-10-22 | 1994-12-06 | The United States Of America As Represented By The Secretary Of The Air Force | Integrated semiconductor laser oscillator and off-axis amplifier |
US5789274A (en) * | 1994-07-15 | 1998-08-04 | Nec Corporation | Wavelength-tunable semiconductor laser and fabrication process thereof |
US6031860A (en) * | 1996-08-22 | 2000-02-29 | Canon Kabushiki Kaisha | Optical device capable of switching output intensity of light of predetermined polarized wave, optical transmitter using the device, network using the transmitter, and method of driving optical device |
US5832014A (en) * | 1997-02-11 | 1998-11-03 | Lucent Technologies Inc. | Wavelength stabilization in tunable semiconductor lasers |
US5889801A (en) * | 1997-02-14 | 1999-03-30 | Nec Corporation | Driving method for tunable semiconductor laser diode, tunable light source device and driving method for the same |
US6088373A (en) * | 1999-02-17 | 2000-07-11 | Lucent Technologies Inc. | Hybrid tunable Bragg laser |
US6826206B1 (en) * | 1999-02-17 | 2004-11-30 | Adc Telecommunications, Inc. | Method of characterizing a tuneable laser |
US20010005388A1 (en) * | 1999-12-22 | 2001-06-28 | Takaaki Hirata | SHG laser light source and method of modulation for use therewith |
US6738398B2 (en) * | 1999-12-22 | 2004-05-18 | Yokogawa Electric Corporation | SHG laser light source and method of modulation for use therewith |
EP1172905A1 (en) * | 2000-07-11 | 2002-01-16 | Interuniversitair Microelektronica Centrum Vzw | A method and apparatus for controlling a laser structure |
US6865195B2 (en) * | 2000-08-04 | 2005-03-08 | Avanex Corporation | Edge-emitting semiconductor tunable laser |
US20050180479A1 (en) * | 2000-09-13 | 2005-08-18 | The Board Of Trustees Of The Universtiy Of Illinois | Current biased dual DBR grating semiconductor laser |
US6728290B1 (en) | 2000-09-13 | 2004-04-27 | The Board Of Trustees Of The University Of Illinois | Current biased dual DBR grating semiconductor laser |
US7339968B2 (en) | 2000-09-13 | 2008-03-04 | The Board Of Trustees Of The University Of Illinois | Current biased dual DBR grating semiconductor laser |
GB2369491A (en) * | 2000-11-28 | 2002-05-29 | Kamelian Ltd | Tunable semiconductor laser |
EP1223647A1 (en) * | 2001-01-12 | 2002-07-17 | Interuniversitair Micro-Elektronica Centrum Vzw | A method and apparatus for controlling a laser structure |
US20030011851A1 (en) * | 2001-06-29 | 2003-01-16 | John Trezza | Redundant optical device array |
US7831151B2 (en) * | 2001-06-29 | 2010-11-09 | John Trezza | Redundant optical device array |
US20050078724A1 (en) * | 2002-09-03 | 2005-04-14 | Massara Benedict Aeneas | Single mode distributed feedback lasers |
CN100372134C (en) * | 2003-07-23 | 2008-02-27 | 厦门市三安光电股份有限公司 | A Prague reflector structure for LED |
US7573928B1 (en) * | 2003-09-05 | 2009-08-11 | Santur Corporation | Semiconductor distributed feedback (DFB) laser array with integrated attenuator |
US20060222033A1 (en) * | 2005-03-31 | 2006-10-05 | Fujitsu Limited | Optical semiconductor device and driving method thereof |
US7633984B2 (en) * | 2005-03-31 | 2009-12-15 | Fujitsu Limited | Optical semiconductor device and driving method thereof |
US20100061414A1 (en) * | 2005-03-31 | 2010-03-11 | Fujitsu Limited | Optical semiconductor device and driving method thereof |
US8073033B2 (en) * | 2005-03-31 | 2011-12-06 | Fujitsu Limited | Optical semiconductor device and driving method thereof |
Also Published As
Publication number | Publication date |
---|---|
EP0370443A1 (en) | 1990-05-30 |
JP2776922B2 (en) | 1998-07-16 |
FR2639773B1 (en) | 1994-05-13 |
EP0370443B1 (en) | 1993-10-06 |
DE68909747D1 (en) | 1993-11-11 |
JPH02188985A (en) | 1990-07-25 |
DE68909747T2 (en) | 1994-01-27 |
FR2639773A1 (en) | 1990-06-01 |
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