US5318632A - Wafer process tube apparatus and method for vertical furnaces - Google Patents
Wafer process tube apparatus and method for vertical furnaces Download PDFInfo
- Publication number
- US5318632A US5318632A US08/065,290 US6529093A US5318632A US 5318632 A US5318632 A US 5318632A US 6529093 A US6529093 A US 6529093A US 5318632 A US5318632 A US 5318632A
- Authority
- US
- United States
- Prior art keywords
- exhaust port
- cap
- ring
- open end
- tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/912—Differential etching apparatus having a vertical tube reactor
Definitions
- the present invention relates to an improved wafer process tube apparatus and method for substantially normalizing and controlling gas flow rates in vertical furnaces (e.g., vertical heat treatment furnaces, vertical oxidation furnaces, and vertical diffusion furnaces) such as those used in the semiconductor production process, and more particularly to a process tube apparatus and method which can reduce in-plane variations and wafer to wafer variations in thickness and quality of thin films formed on semi-conductor wafers and of semi-conductor wafers annealed within such vertical furnaces.
- vertical furnaces e.g., vertical heat treatment furnaces, vertical oxidation furnaces, and vertical diffusion furnaces
- FIG. 12 is a side view diagram by way of example, of a conventional process tube 1 for use in vertical furnaces.
- the process tube 1 for vertical furnaces is of a quartz-made cylinder with its upper end closed and its lower end left open.
- a process gas introducing pipe 2 is connected to the center of an upper end portion of the process tube 1 for communication with an inner cavity of the process tube, and an exhaust pipe 3 is connected to a peripheral wall of the process tube 1 at a position near its lower end for communication with the tube's inner cavity through an exhaust port la formed at the same position.
- a cap 4 is inserted into the lower open end of the process tube 1 for vertical furnaces while leaving an appropriate gap between itself and an inner circumferential surface of the process tube 1 for vertical furnaces.
- a wafer mount boat 5 is supported to an upper end surface 4a of the cap 4 directed toward the inner cavity of the process tube 1.
- the cap 4 is supported at its lower end by a lifting device (not shown) and inserted into the process tube 1 for vertical furnaces from below, with the wafer mount boat 5 kept supported on the upper end surface 4a of the cap 4.
- the present invention has been made to overcome the above-mentioned problems in the prior art, and its object is to provide a wafer process tube for vertical furnaces which can reduce in-plane variations and wafer to wafer variations in thickness and quality of thin films formed on wafers in the vertical furnaces, and of wafers annealed therein, by normalizing the gas flow rate within the process tube.
- a cap of heat insulating material is inserted into the vertical process tube with the upper surface of the cap being higher than the exhaust port of the tube.
- a groove of appropriate dimensions is formed around the outer circumferential surface of the cap in close proximity to the exhaust port of the tube.
- the flow resistance of the groove is lower than that of the gap between the inner wall of the process tube and the outer wall of the cap near the exhaust port of the tube.
- the flow resistance of the groove gradually increases, however, in proceeding circumferentially one hundred eighty (180) degrees about the cap from a position in close proximity with the exhaust port of the tube.
- Gas introduced into the process tube flows at a uniform rate between the inner circumference of the tube and the outer circumference of the cap to the exhaust port. Temperature variations caused from non-uniform gas flow rates thereby are prevented, and in-plane variations and wafer to water variations in thickness and quality of thin films formed on wafers and of wafers annealed may be controlled.
- the groove about the circumference of the cap is inclined such that the distance between the groove and the upper end surface of the cap gradually decreases in proceeding one hundred eighty (180) degrees about the outer circumference of the cap from a position in close proximity with the process tube exhaust port.
- the flow resistance between the tube and cap becomes smaller, while the flow resistance of the groove increases in proceeding one hundred eighty degrees along the groove from a position in close proximity to the exhaust port.
- an inclined ring of heat insulating material is fixed to the outer circumferential surface of the cap at a position higher than the exhaust port of the process tube, such that the distance between the ring and the upper face of the cap gradually decreases in proceeding one hundred eighty (180) degrees along the outer circumference of the cap from a position in close proximity with the exhaust port of the process tube.
- a horizontal ring with a plurality of cutouts is fixed about the outer circumferential surface of the cap above the exhaust port of the process tube and near the upper end surface of the cap.
- the circumferential distance between ring cutouts gradually decreases in proceeding one hundred eighty (180) degrees about the outer circumference of the cap from a position in close proximity with the exhaust port of the process tube.
- the circumferential distance between cutouts may be held constant while the cross-sectional area of the cutouts is gradually increased in proceeding one hundred eighty (180) degrees about the circumference of the cap from a position in close proximity with the exhaust port of the process tube.
- a passage is formed inside of the cap, with one end open at the center of the upper end surface of the cap, and the other end open to the outer circumferential surface of the cap at a position facing the exhaust port of the process tube.
- the passage includes a cavity near its upper end which acts as a buffer.
- the cross-sectional area of the communication holes in this instance remain equal in proceeding circumferentially from a position in closest proximity to the exhaust port.
- Flow resistance from the interior of the process tube through the communication holes to the annular ring thus decreases, while the flow resistance within the annular ring increases, in proceeding circumferentially one hundred eighty (180) degrees about the pipe from the exhaust port.
- the flow rate of gas circumferentially about the cap thereby is normalized.
- FIG. 1 is a side view, partially sectioned, showing the construction of a first embodiment of the present invention.
- FIG. 3 is a side view, partially sectioned, showing the construction of a second embodiment of the present invention.
- FIG. 4 is a side view, partially sectioned, showing the construction of a third embodiment of the present invention.
- FIG. 5 is a top plan view of a cap in the third embodiment of the present invention.
- FIG. 9 is a top plan view, partially sectioned, of a cap in the fifth embodiment of the present invention.
- FIG. 10 is a side view, partially sectioned, showing the construction of a sixth embodiment of the present invention.
- FIG. 11 is a sectional view taken along line I--I in FIG. 10.
- FIG. 12 is a side view diagram of a prior art process tube used in vertical furnaces.
- FIG. 1 shows a first embodiment of the present invention; i.e., it is a side view, partially sectioned, showing a condition that a cap 4 containing heat insulating material such as glass wool therein is inserted into an opening of a quartz-made, cylindrical process tube 1 for vertical furnaces at its lower end or bottom.
- An exhaust pipe 3 is connected to a peripheral wall of the process tube 1 at a position near the bottom opening for communication with an inner cavity of the tube through an exhaust port 1a formed at the same position.
- the cap 4 is inserted into the process tube 1 such that an upper end surface 4a of the cap 4 directed toward the inner cavity of the process tube 1 is positioned above the exhaust port 1a.
- a ring-shaped sealing member 4d fixed to an upper surface of the flange 4c, thereby keeping air tightness. Additionally, as with the conventional cap shown in FIG. 12, a wafer mount boat is supported on the upper end surface 4a of cap 4.
- a groove 6 serving as exhaust flow uniformalizing or normalizing means is formed in the outer circumferential surface 4b of the cap 4.
- the groove 6 is of a groove defined continuously in the circumferential direction at the same level as the exhaust port 1a, and is formed by recessing the outer circumferential surface 4b of the cap 4 into a semicircular shape in cross-section. It is preferable that the cross-sectional area of flow passage defined by the groove 6 is comparable to or greater than that defined by the exhaust pipe 3.
- Gas supplied to the process tube 1 flows downwardly and reaches the exhaust port 1a after passing the gap between the inner circumferential surface of the process tube 1 and the outer circumferential surface 4b of the cap 4, following which the gas is discharged to the exterior via the exhaust pipe 3.
- the groove 6 formed in the outer circumferential surface 4b of the cap 4 is positioned at the same level as the exhaust port 1a in opposite relation thereto, and the cross-sectional area of flow passage defined by the groove 6 is set to be relatively large.
- the flow resistance of the groove is lower than that of the gap between the inner wall of the process tube and the outer wall of the cap near the exhaust port of the tube.
- the flow resistance of the groove gradually increases, however, in proceeding circumferentially one hundred eighty degrees about the cap from a position in close proximity to the exhaust port of the tube 1.
- FIG. 3 shows a second embodiment of the present invention. It should be noted that certain elements of FIG. 3 correspond to those of FIG. 1 which illustrate the first embodiment, and those members and locations which are identical to those in FIG. 1 are denoted by the same reference numerals and their description already given above will not be repeated.
- the groove 6 formed as an exhaust flow uniformalizing or normalizing means in the outer circumferential surface 4b of the cap 4 is of a groove inclined such that the distance between itself and the upper end surface 4a of the cap 4 is gradually shortened as the groove spaces from the position facing the exhaust port 1a toward the opposite side in the circumferential direction.
- the cross-sectional area of flow passage defined by the groove 6 is required to be so extremely large that flow resistance of the groove 6 can be perfectly ignored. In practice, therefore, there is a fear that the exhaust flow may be localized due to the flow resistance of the groove 6.
- the exhaust flow in the process tube 1 is permitted to uniformly flow into the entire gap between the inner circumferential surface of the process tube 1 and the outer circumferential surface 4b of the cap 4, whereby the exhaust flow is reliably prevented from localizing.
- the ring 7 is fixed in such a manner as to make shorter the distance between itself and the upper end surface 4a of the cap 4 as it spaces from the position facing the exhaust port 1a, the lower-pressure region is located nearer to the inner cavity of the process tube 1 at a position remoter from the exhaust port 1a, causing the exhaust flow to more easily flow into the gap. Therefore, the entire flow passage leading from the inner cavity of the process tube 1 to the exhaust port 1a is made uniform in flow resistance at any circumferential positions around the cap 4.
- the exhaust flow in the process tube 1 is permitted to uniformly flow into the entire gap between the inner circumferential surface of the process tube 1 and the outer circumferential surface 4b of the cap 4, whereby the exhaust flow is prevented from localizing.
- FIGS. 6 and 7 show a fourth embodiment of the present invention. It should be noted that those members and locations which are identical to those in the above first, second and third embodiments are denoted by the same reference numerals and their description already given above will not be repeated.
- a ring 7 is used as an exhaust flow uniformalizing or normalizing means similarly to the above third embodiment, but the ring 7 is horizontally fixed at a position higher than the exhaust port 1a.
- the entire flow passage leading from the inner cavity of the process tube 1 to the exhaust port 1a is made uniform in flow resistance at any circumferential positions around the cap 4.
- the exhaust flow in the process tube 1 is permitted to uniformly flow into the entire gap between the inner circumferential surface of the process tube 1 and the outer circumferential surface 4b of the cap 4, whereby the exhaust flow is prevented from localizing.
- the gap between the inner circumferential surface of the process tube 1 and the outer circumferential surface 4b of the cap 4 is made to have smaller flow resistance as it spaces from the position facing the exhaust port 1a toward the opposite side in the circumferential direction, by forming the plurality of cutouts 7a, . . . , 7a in the ring such that the interval between these cutouts is gradually shortened as the cutout spaces from the position facing the exhaust port 1a toward the opposite side in the circumferential direction
- the arrangement for making smaller the flow resistance of the aforesaid gap with the increasing distance from the exhaust port 1a is not limited to that of the illustrated embodiment.
- the ring 7 may be formed in the ring 7 such that the interval between these cutouts 7a, . . . , 7a is set to be constant, but the opening area of the cutouts is gradually enlarged as the cutout spaces from the position facing the exhaust port 1a toward the opposite side in the circumferential direction.
- the ring 7 may be formed to have a smaller thickness or a narrower width as it spaces from the position facing the exhaust port 1a toward the opposite side in the circumferential direction.
- FIGS. 8 and 9 show a fifth embodiment of the present invention. It should be noted that those members and locations which are identical to those in the above embodiments are denoted by the same reference numerals, and their description already given above will not be repeated.
- a passage 8 is formed as exhaust flow uniformalizing means in the cap 4.
- the passage 8 has one end being open in the upper end surface 4a of the cap 4 at the center thereof, and the other end being open in the outer circumferential surface 4b of the cap 4 at a position facing the exhaust port 1a.
- the passage 8 has a cavity portion 8a, of which diameter is larger than the other portion, near its opening in the upper end surface 4a.
- the cavity portion 8a is defined midway the passage 8 near its upstream end to serve as a buffer. Therefore, the region where the exhaust rate is rapidly increased exists inside the cap, which is effective to make smaller in-plane variations and wafer to wafer variations in quality of wafers and so on.
- the position where the one end of the passage 8 opens in the upper end surface 4a is not limited to the center of the upper end surface 4a.
- the passage 8 may open in a scattered patter over the upper end surface 4a.
- FIGS. 10 and 11 show a sixth embodiment of the present invention.
- FIG. 10 is a side view, partially sectioned, showing the vicinity of the exhaust end of the process tube 1
- FIG. 11 is a sectional view taken along line I--I of FIG. 10. It should be noted that those members and locations which are identical to those in the above embodiments are denoted by the same reference numerals, and their description already given above will not be repeated.
- the process tube 1 is formed into a horizontal, double-wall tube or hollow annular ring in a part of the outer circumferential surface near its exhaust end, thereby forming an annular ring 9 which surrounds an axially central portion of the outer circumferential surface 4b of the cap 4.
- the annular ring 9 is connected to the exhaust pipe 3 at one location in the circumferential direction for communication therebetween.
- the interior of the annular ring 9 is communicated with the inner cavity of the process tube 1 via six communication holes 10a to 10f.
- These communication holes 10a to 10f are formed at six locations with a constant interval in the circumferential direction starting from the position facing the exhaust pipe 3. More specifically, of the communication holes 10a to 10f, the communication hole 10a formed at the position facing the exhaust pipe 3 has a minimum opening area. With the increasing distance from the exhaust pipe 3 in the circumferential direction, the opening area of the remaining communication holes becomes larger in the order of 10b, 10c and 10d, 10e on the opposite sides.
- the communication hole 10f formed at the position angularly spaced 180 degrees from the position facing the exhaust pipe 3 has a maximum opening area.
- the area through which the process tube 1 and the annular ring 9 are communicated with each other is increased as the annular ring spaces from the position, where the exhaust pipe 3 is connected to the annular ring 9, toward the opposite side in the circumferential direction.
- Gas supplied to the process tube 1 through the process gas introducing pipe 2 flows downwardly and reaches the annular ring 9 after passing the gap between the inner circumferential surface of the process tube 1 and the outer circumferential surface 4b of the cap 4 and the communication holes 10a to 10f, following which the gas is discharged to the exterior via the exhaust pipe 3.
- the area. through which the process tube 1 and the annular ring 9 are communicated with each other is increased at the locations remoter from the exhaust pipe 3 and, therefore, the flow passage leading from inner cavity of the process tube 1 to the interior of the annular ring 9 has smaller flow resistance at the locations remoter from the exhaust pipe 3.
- the flow resistance of the annular ring 9 between an arbitrary circumferential position thereof and the position where it is connected to the exhaust pipe 3, is larger at the locations remoter from the exhaust pipe 3 because that flow resistance is in proportion to the distance from the position where the annular ring 9 is connected to the exhaust pipe 3.
- the flow resistance of the communication holes 10a to 10f and the flow resistance of the annular ring 9 itself exhibit characteristics reversed to each other, taking as a variable the distance from the position where the annular ring 9 is connected to the exhaust pipe 3.
- the opening areas of the communication holes 10a to 10f and the passage diameter of the annular ring 9 are made uniform in flow resistance at any circumferential positions around the cap 4.
- the exhaust flow in the process tube 1 is permitted to uniformly flow into the entire gap between the inner circumferential surface of the process tube 1 and the outer circumferential surface 4b of the cap 4, whereby the exhaust flow is prevented from localizing.
Abstract
Description
Claims (23)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4-132628 | 1992-05-25 | ||
JP4132628A JP2546573B2 (en) | 1992-05-25 | 1992-05-25 | Caps for process tubes for vertical furnaces |
JP13531092A JPH06291070A (en) | 1992-05-27 | 1992-05-27 | Process tube for vertical furnace |
JP4-135310 | 1992-05-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
US5318632A true US5318632A (en) | 1994-06-07 |
Family
ID=26467155
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/065,290 Expired - Fee Related US5318632A (en) | 1992-05-25 | 1993-05-21 | Wafer process tube apparatus and method for vertical furnaces |
Country Status (1)
Country | Link |
---|---|
US (1) | US5318632A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0714998A3 (en) * | 1994-11-30 | 1996-12-04 | Applied Materials Inc | CVD processing chamber |
US5885356A (en) * | 1994-11-30 | 1999-03-23 | Applied Materials, Inc. | Method of reducing residue accumulation in CVD chamber using ceramic lining |
US5895530A (en) * | 1996-02-26 | 1999-04-20 | Applied Materials, Inc. | Method and apparatus for directing fluid through a semiconductor processing chamber |
WO1999057754A1 (en) * | 1998-05-04 | 1999-11-11 | Cfmt, Inc. | Wet processing methods for the manufacture of electronic components |
US6211094B1 (en) * | 1998-09-15 | 2001-04-03 | Samsung Electronics Co., Ltd. | Thickness control method in fabrication of thin-film layers in semiconductor devices |
US20070051309A1 (en) * | 2005-08-30 | 2007-03-08 | Jian-Shing Lai | Pump ring |
US20120186573A1 (en) * | 2011-01-21 | 2012-07-26 | Jdira Lucian C | Thermal processing furnace and liner for the same |
US20180233327A1 (en) * | 2017-02-15 | 2018-08-16 | Applied Materials, Inc. | Apparatus with concentric pumping for multiple pressure regimes |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4640223A (en) * | 1984-07-24 | 1987-02-03 | Dozier Alfred R | Chemical vapor deposition reactor |
EP0385382A2 (en) * | 1989-02-27 | 1990-09-05 | Heinrich Dr. Söhlbrand | Process and apparatus for the thermal treatment of semiconducting materials |
-
1993
- 1993-05-21 US US08/065,290 patent/US5318632A/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4640223A (en) * | 1984-07-24 | 1987-02-03 | Dozier Alfred R | Chemical vapor deposition reactor |
EP0385382A2 (en) * | 1989-02-27 | 1990-09-05 | Heinrich Dr. Söhlbrand | Process and apparatus for the thermal treatment of semiconducting materials |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0714998A3 (en) * | 1994-11-30 | 1996-12-04 | Applied Materials Inc | CVD processing chamber |
US5853607A (en) * | 1994-11-30 | 1998-12-29 | Applied Materials, Inc. | CVD processing chamber |
US5885356A (en) * | 1994-11-30 | 1999-03-23 | Applied Materials, Inc. | Method of reducing residue accumulation in CVD chamber using ceramic lining |
US5895530A (en) * | 1996-02-26 | 1999-04-20 | Applied Materials, Inc. | Method and apparatus for directing fluid through a semiconductor processing chamber |
WO1999057754A1 (en) * | 1998-05-04 | 1999-11-11 | Cfmt, Inc. | Wet processing methods for the manufacture of electronic components |
US6211094B1 (en) * | 1998-09-15 | 2001-04-03 | Samsung Electronics Co., Ltd. | Thickness control method in fabrication of thin-film layers in semiconductor devices |
US20070051309A1 (en) * | 2005-08-30 | 2007-03-08 | Jian-Shing Lai | Pump ring |
US7726953B2 (en) * | 2005-08-30 | 2010-06-01 | United Microelectronics Corp. | Pump ring |
US20120186573A1 (en) * | 2011-01-21 | 2012-07-26 | Jdira Lucian C | Thermal processing furnace and liner for the same |
US8398773B2 (en) * | 2011-01-21 | 2013-03-19 | Asm International N.V. | Thermal processing furnace and liner for the same |
US20180233327A1 (en) * | 2017-02-15 | 2018-08-16 | Applied Materials, Inc. | Apparatus with concentric pumping for multiple pressure regimes |
US10559451B2 (en) * | 2017-02-15 | 2020-02-11 | Applied Materials, Inc. | Apparatus with concentric pumping for multiple pressure regimes |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100966519B1 (en) | Process Tube Support Sleeve With Circumferential Channels | |
US5592581A (en) | Heat treatment apparatus | |
US7250094B2 (en) | Heat treatment apparatus | |
KR101004173B1 (en) | Film forming device | |
JPH03224217A (en) | Heat-treating device | |
KR100668585B1 (en) | Vertical heat treating equipment | |
US5318632A (en) | Wafer process tube apparatus and method for vertical furnaces | |
KR100280692B1 (en) | Heat treatment apparatus and heat treatment method | |
US20190080941A1 (en) | Cooling unit, heat insulating structure, and substrate processing apparatus | |
KR20180123588A (en) | Semiconductor processing chamber | |
TW202013587A (en) | Film-forming apparatus | |
KR100407412B1 (en) | Heat treatment method and apparatus | |
US20210035823A1 (en) | Substrate processing device | |
CN111834247A (en) | Cooling device and semiconductor processing equipment | |
JP4665204B2 (en) | Thermal processing chamber | |
JP2001015481A (en) | Etching device | |
KR20160115773A (en) | Substrate treating apparatus and treatment gas supplying nozzle | |
KR102522687B1 (en) | Thin film processing apparatus | |
JP4070832B2 (en) | Semiconductor manufacturing equipment | |
US20230408200A1 (en) | Cooling module for baking device and substrate treating apparatus including the same | |
US20220319877A1 (en) | Substrate processing apparatus and substrate processing method | |
JPH0794435A (en) | Diffusion device | |
KR100337108B1 (en) | Apparatus for cooling a semiconductor wafer | |
JP2546573B2 (en) | Caps for process tubes for vertical furnaces | |
KR20050058842A (en) | Apparatus for manufacturing semiconductors |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: KAWASAKI STEEL CORPORATION, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:ONODERA, KIYOSHI;REEL/FRAME:006561/0347 Effective date: 19930518 |
|
FEPP | Fee payment procedure |
Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
FPAY | Fee payment |
Year of fee payment: 8 |
|
AS | Assignment |
Owner name: KAWASAKI MICROELECTRONICS, INC., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:KAWASAKI STEEL CORPORATION;REEL/FRAME:012312/0864 Effective date: 20011129 |
|
REMI | Maintenance fee reminder mailed | ||
LAPS | Lapse for failure to pay maintenance fees | ||
STCH | Information on status: patent discontinuation |
Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
|
FP | Lapsed due to failure to pay maintenance fee |
Effective date: 20060607 |