US5444016A - Method of making ohmic contacts to a complementary III-V semiconductor device - Google Patents
Method of making ohmic contacts to a complementary III-V semiconductor device Download PDFInfo
- Publication number
- US5444016A US5444016A US08/083,751 US8375193A US5444016A US 5444016 A US5444016 A US 5444016A US 8375193 A US8375193 A US 8375193A US 5444016 A US5444016 A US 5444016A
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- United States
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- ohmic
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- forming
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
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- 238000000034 method Methods 0.000 claims abstract description 27
- 239000002019 doping agent Substances 0.000 claims abstract description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 27
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 26
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 229910052790 beryllium Inorganic materials 0.000 claims description 12
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims description 9
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 4
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- 229910052743 krypton Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 claims 1
- 230000003213 activating effect Effects 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 20
- 239000000758 substrate Substances 0.000 abstract description 14
- 229910052751 metal Inorganic materials 0.000 abstract description 7
- 239000002184 metal Substances 0.000 abstract description 7
- 239000012535 impurity Substances 0.000 abstract description 3
- CUJDOZUXNUQIDJ-UHFFFAOYSA-N [Ge][Ni][W] Chemical compound [Ge][Ni][W] CUJDOZUXNUQIDJ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010931 gold Substances 0.000 description 10
- 230000005669 field effect Effects 0.000 description 8
- 238000002955 isolation Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 239000007943 implant Substances 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical group 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910006137 NiGe Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- MBGCACIOPCILDG-UHFFFAOYSA-N [Ni].[Ge].[Au] Chemical compound [Ni].[Ge].[Au] MBGCACIOPCILDG-UHFFFAOYSA-N 0.000 description 1
- ADYFTQBJEQMWID-UHFFFAOYSA-N [Zn].[Au].[Au] Chemical compound [Zn].[Au].[Au] ADYFTQBJEQMWID-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000637 aluminium metallisation Methods 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- ODTJADXKPVVECM-UHFFFAOYSA-N gold nickel zinc Chemical compound [Ni][Zn][Au] ODTJADXKPVVECM-UHFFFAOYSA-N 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000012421 spiking Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823871—Complementary field-effect transistors, e.g. CMOS interconnection or wiring or contact manufacturing related aspects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/02—Contacts, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims (6)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/083,751 US5444016A (en) | 1993-06-25 | 1993-06-25 | Method of making ohmic contacts to a complementary III-V semiconductor device |
DE69428399T DE69428399T2 (en) | 1993-06-25 | 1994-06-23 | Method for producing ohmic contacts for a complementary semiconductor arrangement |
EP94109688A EP0631324B1 (en) | 1993-06-25 | 1994-06-23 | Method of making ohmic contacts to a complementary semiconductor device |
JP16488794A JP3834074B2 (en) | 1993-06-25 | 1994-06-24 | Method for forming ohmic contacts in complementary semiconductor devices |
JP6164884A JPH07142686A (en) | 1993-06-25 | 1994-06-24 | Formation method for ohmic contact of complementary semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/083,751 US5444016A (en) | 1993-06-25 | 1993-06-25 | Method of making ohmic contacts to a complementary III-V semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
US5444016A true US5444016A (en) | 1995-08-22 |
Family
ID=22180464
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/083,751 Expired - Lifetime US5444016A (en) | 1993-06-25 | 1993-06-25 | Method of making ohmic contacts to a complementary III-V semiconductor device |
Country Status (3)
Country | Link |
---|---|
US (1) | US5444016A (en) |
EP (1) | EP0631324B1 (en) |
DE (1) | DE69428399T2 (en) |
Cited By (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5827753A (en) * | 1997-03-20 | 1998-10-27 | Motorola, Inc. | Monolithic integration of driver circuits with LED array and methods of manufacture |
US5940695A (en) * | 1996-10-11 | 1999-08-17 | Trw Inc. | Gallium antimonide complementary HFET |
US6287956B2 (en) * | 1997-04-25 | 2001-09-11 | Nec Corporation | Multilevel interconnecting structure in semiconductor device and method of forming the same |
US6329063B2 (en) * | 1998-12-11 | 2001-12-11 | Nova Crystals, Inc. | Method for producing high quality heteroepitaxial growth using stress engineering and innovative substrates |
US6410941B1 (en) | 2000-06-30 | 2002-06-25 | Motorola, Inc. | Reconfigurable systems using hybrid integrated circuits with optical ports |
US6427066B1 (en) | 2000-06-30 | 2002-07-30 | Motorola, Inc. | Apparatus and method for effecting communications among a plurality of remote stations |
US6462360B1 (en) | 2001-08-06 | 2002-10-08 | Motorola, Inc. | Integrated gallium arsenide communications systems |
US6472694B1 (en) | 2001-07-23 | 2002-10-29 | Motorola, Inc. | Microprocessor structure having a compound semiconductor layer |
US6477285B1 (en) | 2000-06-30 | 2002-11-05 | Motorola, Inc. | Integrated circuits with optical signal propagation |
US6501973B1 (en) | 2000-06-30 | 2002-12-31 | Motorola, Inc. | Apparatus and method for measuring selected physical condition of an animate subject |
US6528405B1 (en) | 2000-02-18 | 2003-03-04 | Motorola, Inc. | Enhancement mode RF device and fabrication method |
US6555946B1 (en) | 2000-07-24 | 2003-04-29 | Motorola, Inc. | Acoustic wave device and process for forming the same |
US6563118B2 (en) | 2000-12-08 | 2003-05-13 | Motorola, Inc. | Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same |
US6585424B2 (en) | 2001-07-25 | 2003-07-01 | Motorola, Inc. | Structure and method for fabricating an electro-rheological lens |
US6589856B2 (en) | 2001-08-06 | 2003-07-08 | Motorola, Inc. | Method and apparatus for controlling anti-phase domains in semiconductor structures and devices |
US6594414B2 (en) | 2001-07-25 | 2003-07-15 | Motorola, Inc. | Structure and method of fabrication for an optical switch |
US6639249B2 (en) | 2001-08-06 | 2003-10-28 | Motorola, Inc. | Structure and method for fabrication for a solid-state lighting device |
US6638838B1 (en) | 2000-10-02 | 2003-10-28 | Motorola, Inc. | Semiconductor structure including a partially annealed layer and method of forming the same |
US6646293B2 (en) | 2001-07-18 | 2003-11-11 | Motorola, Inc. | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates |
US6667196B2 (en) | 2001-07-25 | 2003-12-23 | Motorola, Inc. | Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method |
US6673667B2 (en) | 2001-08-15 | 2004-01-06 | Motorola, Inc. | Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials |
US6673646B2 (en) | 2001-02-28 | 2004-01-06 | Motorola, Inc. | Growth of compound semiconductor structures on patterned oxide films and process for fabricating same |
US6693033B2 (en) | 2000-02-10 | 2004-02-17 | Motorola, Inc. | Method of removing an amorphous oxide from a monocrystalline surface |
US6693298B2 (en) | 2001-07-20 | 2004-02-17 | Motorola, Inc. | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
US20060214238A1 (en) * | 2005-03-28 | 2006-09-28 | Glass Elizabeth C | Multi-gate enhancement mode RF switch and bias arrangement |
US9153671B2 (en) | 2009-12-23 | 2015-10-06 | Intel Corporation | Techniques for forming non-planar germanium quantum well devices |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5606184A (en) * | 1995-05-04 | 1997-02-25 | Motorola, Inc. | Heterostructure field effect device having refractory ohmic contact directly on channel layer and method for making |
Citations (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3684930A (en) * | 1970-12-28 | 1972-08-15 | Gen Electric | Ohmic contact for group iii-v p-types semiconductors |
DE2359640A1 (en) * | 1973-11-30 | 1975-06-12 | Licentia Gmbh | Electric contact on semiconductor with low soldering temp. - consisting of gold, nickel, doped germanium and gold layers |
US4188710A (en) * | 1978-08-11 | 1980-02-19 | The United States Of America As Represented By The Secretary Of The Navy | Ohmic contacts for group III-V n-type semiconductors using epitaxial germanium films |
US4313971A (en) * | 1979-05-29 | 1982-02-02 | Rca Corporation | Method of fabricating a Schottky barrier contact |
JPS5984580A (en) * | 1982-11-08 | 1984-05-16 | Nippon Telegr & Teleph Corp <Ntt> | Ultra-short gate field-effect transistor |
US4540446A (en) * | 1983-09-19 | 1985-09-10 | Oki Electric Industry Co., Ltd. | Method of forming ohmic contact on GaAs by Ge film and implanting impurity ions therethrough |
JPS62149125A (en) * | 1985-12-23 | 1987-07-03 | Nec Corp | Manufacture of semiconductor device |
JPS62149138A (en) * | 1985-12-23 | 1987-07-03 | Nec Corp | Manufacture of semiconductor device |
US4712291A (en) * | 1985-06-06 | 1987-12-15 | The United States Of America As Represented By The Secretary Of The Air Force | Process of fabricating TiW/Si self-aligned gate for GaAs MESFETs |
US4729000A (en) * | 1985-06-21 | 1988-03-01 | Honeywell Inc. | Low power AlGaAs/GaAs complementary FETs incorporating InGaAs n-channel gates |
JPS6395620A (en) * | 1986-10-09 | 1988-04-26 | Mitsubishi Electric Corp | Forming method for ohmic electrode |
US4746627A (en) * | 1986-10-30 | 1988-05-24 | Mcdonnell Douglas Corporation | Method of making complementary GaAs heterojunction transistors |
US4814851A (en) * | 1985-06-21 | 1989-03-21 | Honeywell Inc. | High transconductance complementary (Al,Ga)As/gas heterostructure insulated gate field-effect transistor |
US4830980A (en) * | 1988-04-22 | 1989-05-16 | Hughes Aircraft Company | Making complementary integrated p-MODFET and n-MODFET |
US4833042A (en) * | 1988-01-27 | 1989-05-23 | Rockwell International Corporation | Nonalloyed ohmic contacts for n type gallium arsenide |
US4989065A (en) * | 1988-06-13 | 1991-01-29 | Sumitomo Electric Industries, Ltd. | Heat-resistant ohmic electrode |
US4998158A (en) * | 1987-06-01 | 1991-03-05 | Motorola, Inc. | Hypoeutectic ohmic contact to N-type gallium arsenide with diffusion barrier |
US5045502A (en) * | 1990-05-10 | 1991-09-03 | Bell Communications Research, Inc. | PdIn ohmic contact to GaAs |
US5060031A (en) * | 1990-09-18 | 1991-10-22 | Motorola, Inc | Complementary heterojunction field effect transistor with an anisotype N+ ga-channel devices |
US5093280A (en) * | 1987-10-13 | 1992-03-03 | Northrop Corporation | Refractory metal ohmic contacts and method |
US5100835A (en) * | 1991-03-18 | 1992-03-31 | Eastman Kodak Company | Shallow ohmic contacts to N-GaAs |
US5116774A (en) * | 1991-03-22 | 1992-05-26 | Motorola, Inc. | Heterojunction method and structure |
US5144410A (en) * | 1989-03-29 | 1992-09-01 | Vitesse Semiconductor Corporation | Ohmic contact for III-V semiconductor devices |
US5214298A (en) * | 1986-09-30 | 1993-05-25 | Texas Instruments Incorporated | Complementary heterostructure field effect transistors |
US5275971A (en) * | 1992-04-20 | 1994-01-04 | Motorola, Inc. | Method of forming an ohmic contact to III-V semiconductor materials |
US5281842A (en) * | 1990-06-28 | 1994-01-25 | Mitsubishi Denki Kabushiki Kaisha | Dynamic random access memory with isolated well structure |
US5389564A (en) * | 1992-06-22 | 1995-02-14 | Motorola, Inc. | Method of forming a GaAs FET having etched ohmic contacts |
-
1993
- 1993-06-25 US US08/083,751 patent/US5444016A/en not_active Expired - Lifetime
-
1994
- 1994-06-23 EP EP94109688A patent/EP0631324B1/en not_active Expired - Lifetime
- 1994-06-23 DE DE69428399T patent/DE69428399T2/en not_active Expired - Fee Related
Patent Citations (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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EP0631324B1 (en) | 2001-09-26 |
DE69428399D1 (en) | 2001-10-31 |
DE69428399T2 (en) | 2002-07-04 |
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