US5592009A - Semiconductor device having a floating node that can maintain a predetermined potential for long time, a semiconductor memory device having high data maintenance performance, and a method of manufacturing thereof - Google Patents
Semiconductor device having a floating node that can maintain a predetermined potential for long time, a semiconductor memory device having high data maintenance performance, and a method of manufacturing thereof Download PDFInfo
- Publication number
- US5592009A US5592009A US08/516,075 US51607595A US5592009A US 5592009 A US5592009 A US 5592009A US 51607595 A US51607595 A US 51607595A US 5592009 A US5592009 A US 5592009A
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- United States
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-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
Abstract
Description
I1=f1 (P, N.sup.+)·(e.sup.Y1V1-1) (1)
I2=f2 (P.sup.+, N)·e.sup.Y2V2-1) (2)
Claims (30)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/733,104 US5893728A (en) | 1994-09-01 | 1996-10-16 | Semiconductor device having a floating node that can maintain a predetermined potential for long time, a semiconductor memory device having high data maintenance performance, and a method of manufacturing thereof |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20868094 | 1994-09-01 | ||
JP6-208680 | 1994-09-01 | ||
JP7-017899 | 1995-02-06 | ||
JP01789995A JP3802942B2 (en) | 1994-09-01 | 1995-02-06 | Semiconductor device, semiconductor memory device, and method of manufacturing semiconductor memory device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/733,104 Division US5893728A (en) | 1994-09-01 | 1996-10-16 | Semiconductor device having a floating node that can maintain a predetermined potential for long time, a semiconductor memory device having high data maintenance performance, and a method of manufacturing thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
US5592009A true US5592009A (en) | 1997-01-07 |
Family
ID=26354488
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/516,075 Expired - Lifetime US5592009A (en) | 1994-09-01 | 1995-08-17 | Semiconductor device having a floating node that can maintain a predetermined potential for long time, a semiconductor memory device having high data maintenance performance, and a method of manufacturing thereof |
US08/733,104 Expired - Lifetime US5893728A (en) | 1994-09-01 | 1996-10-16 | Semiconductor device having a floating node that can maintain a predetermined potential for long time, a semiconductor memory device having high data maintenance performance, and a method of manufacturing thereof |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/733,104 Expired - Lifetime US5893728A (en) | 1994-09-01 | 1996-10-16 | Semiconductor device having a floating node that can maintain a predetermined potential for long time, a semiconductor memory device having high data maintenance performance, and a method of manufacturing thereof |
Country Status (2)
Country | Link |
---|---|
US (2) | US5592009A (en) |
JP (1) | JP3802942B2 (en) |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5773865A (en) * | 1994-09-08 | 1998-06-30 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory and semiconductor device having SOI structure |
US5808341A (en) * | 1996-06-07 | 1998-09-15 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having an SOI structure |
US6018172A (en) * | 1994-09-26 | 2000-01-25 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device including memory cell transistors formed on SOI substrate and having fixed body regions |
WO2001057928A1 (en) * | 2000-02-03 | 2001-08-09 | Case Western Reserve University | High power capacitors from thin layers of metal powder or metal sponge particles |
US6320227B1 (en) | 1998-12-26 | 2001-11-20 | Hyundai Electronics Industries Co., Ltd. | Semiconductor memory device and method for fabricating the same |
US20020043668A1 (en) * | 2000-10-17 | 2002-04-18 | Matsushita Electric Industrial Co., Ltd. | Semiconductor integrated circuit device and method of producing the same |
US6459113B1 (en) * | 2000-08-10 | 2002-10-01 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor integrated circuit device and method of manufacturing the same, and cell size calculation method for DRAM memory cells |
US6614068B1 (en) | 1998-10-28 | 2003-09-02 | Hyundai Electronics Industries Co., Ltd. | SOI device with reversed stacked capacitor cell and body contact structure and method for fabricating the same |
US20040041909A1 (en) * | 2002-09-02 | 2004-03-04 | Japan Servo Co., Ltd. | Method of surveillance camera by using rotary electric machine |
US20060214202A1 (en) * | 2005-03-22 | 2006-09-28 | Zorich Robert S | Apparatus and methods for shielding integrated circuitry |
US20070158743A1 (en) * | 2006-01-11 | 2007-07-12 | International Business Machines Corporation | Thin silicon single diffusion field effect transistor for enhanced drive performance with stress film liners |
US20080316826A1 (en) * | 2007-06-19 | 2008-12-25 | Renesas Technology Corp. | Semiconductor device having transistor and capacitor of SOI structure and storing data in nonvolatile manner |
US20090305474A1 (en) * | 2004-06-24 | 2009-12-10 | International Business Machines Corporation | Strained-silicon cmos device and method |
US7790540B2 (en) | 2006-08-25 | 2010-09-07 | International Business Machines Corporation | Structure and method to use low k stress liner to reduce parasitic capacitance |
US20100273302A1 (en) * | 2005-01-31 | 2010-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and manufacturing method thereof |
US7935993B2 (en) | 2006-01-10 | 2011-05-03 | International Business Machines Corporation | Semiconductor device structure having enhanced performance FET device |
US7960801B2 (en) | 2005-11-03 | 2011-06-14 | International Business Machines Corporation | Gate electrode stress control for finFET performance enhancement description |
US20110230030A1 (en) * | 2010-03-16 | 2011-09-22 | International Business Machines Corporation | Strain-preserving ion implantation methods |
US8629501B2 (en) | 2007-09-25 | 2014-01-14 | International Business Machines Corporation | Stress-generating structure for semiconductor-on-insulator devices |
US8728905B2 (en) | 2007-11-15 | 2014-05-20 | International Business Machines Corporation | Stress-generating shallow trench isolation structure having dual composition |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0161438B1 (en) * | 1995-09-19 | 1999-02-01 | 김광호 | Semiconductor memory device and manufacture thereof |
US5861650A (en) | 1996-08-09 | 1999-01-19 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device comprising an FPGA |
JP3201370B2 (en) | 1999-01-22 | 2001-08-20 | 日本電気株式会社 | Nonvolatile semiconductor memory device and method of manufacturing the same |
KR100349366B1 (en) | 1999-06-28 | 2002-08-21 | 주식회사 하이닉스반도체 | SOI device and method of manufacturing the same |
US6806123B2 (en) * | 2002-04-26 | 2004-10-19 | Micron Technology, Inc. | Methods of forming isolation regions associated with semiconductor constructions |
US6756619B2 (en) * | 2002-08-26 | 2004-06-29 | Micron Technology, Inc. | Semiconductor constructions |
DE10248722A1 (en) * | 2002-10-18 | 2004-05-06 | Infineon Technologies Ag | Integrated circuit arrangement with capacitor and manufacturing process |
JP4749162B2 (en) * | 2005-01-31 | 2011-08-17 | 株式会社半導体エネルギー研究所 | Semiconductor device |
US20070158733A1 (en) * | 2006-01-09 | 2007-07-12 | Yield Microelectronics Corp. | High-speed low-voltage programming and self-convergent high-speed low-voltage erasing schemes for EEPROM |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5355012A (en) * | 1990-10-03 | 1994-10-11 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
US5440161A (en) * | 1993-07-27 | 1995-08-08 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having an SOI structure and a manufacturing method thereof |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR960013508B1 (en) * | 1992-07-07 | 1996-10-05 | 현대전자산업 주식회사 | Semiconductor device having thin film transistor & method of manufacturing the same |
EP0606758B1 (en) * | 1992-12-30 | 2000-09-06 | Samsung Electronics Co., Ltd. | Method of producing an SOI transistor DRAM |
JP2796249B2 (en) * | 1993-07-02 | 1998-09-10 | 現代電子産業株式会社 | Method for manufacturing semiconductor memory device |
US5525531A (en) * | 1995-06-05 | 1996-06-11 | International Business Machines Corporation | SOI DRAM with field-shield isolation |
US5508219A (en) * | 1995-06-05 | 1996-04-16 | International Business Machines Corporation | SOI DRAM with field-shield isolation and body contact |
-
1995
- 1995-02-06 JP JP01789995A patent/JP3802942B2/en not_active Expired - Fee Related
- 1995-08-17 US US08/516,075 patent/US5592009A/en not_active Expired - Lifetime
-
1996
- 1996-10-16 US US08/733,104 patent/US5893728A/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5355012A (en) * | 1990-10-03 | 1994-10-11 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
US5440161A (en) * | 1993-07-27 | 1995-08-08 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having an SOI structure and a manufacturing method thereof |
Cited By (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5773865A (en) * | 1994-09-08 | 1998-06-30 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory and semiconductor device having SOI structure |
US6018172A (en) * | 1994-09-26 | 2000-01-25 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device including memory cell transistors formed on SOI substrate and having fixed body regions |
US6384445B1 (en) | 1994-09-26 | 2002-05-07 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device including memory cell transistors formed on SOI substrate and having fixed body regions |
US5808341A (en) * | 1996-06-07 | 1998-09-15 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having an SOI structure |
US6310377B1 (en) * | 1996-06-07 | 2001-10-30 | Shigenobu Maeda | Semiconductor device having an SOI structure |
US6614068B1 (en) | 1998-10-28 | 2003-09-02 | Hyundai Electronics Industries Co., Ltd. | SOI device with reversed stacked capacitor cell and body contact structure and method for fabricating the same |
US6429074B2 (en) | 1998-12-26 | 2002-08-06 | Hyundai Electronics Industries Co., Ltd. | Semiconductor memory device and method for fabricating the same |
US6320227B1 (en) | 1998-12-26 | 2001-11-20 | Hyundai Electronics Industries Co., Ltd. | Semiconductor memory device and method for fabricating the same |
WO2001057928A1 (en) * | 2000-02-03 | 2001-08-09 | Case Western Reserve University | High power capacitors from thin layers of metal powder or metal sponge particles |
US6914769B2 (en) | 2000-02-03 | 2005-07-05 | Case Western Reserve University | High power capacitors from thin layers of metal powder or metal sponge particles |
US20030169560A1 (en) * | 2000-02-03 | 2003-09-11 | Welsch Gerhard E. | High power capacitors from thin layers of metal powder or metal sponge particles |
US6459113B1 (en) * | 2000-08-10 | 2002-10-01 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor integrated circuit device and method of manufacturing the same, and cell size calculation method for DRAM memory cells |
US20020195669A1 (en) * | 2000-08-10 | 2002-12-26 | Toshinori Morihara | Semiconductor integrated circuit device and method of manufacturing the same, and cell size calculation method for DRAM memory cells |
US20020043668A1 (en) * | 2000-10-17 | 2002-04-18 | Matsushita Electric Industrial Co., Ltd. | Semiconductor integrated circuit device and method of producing the same |
US20050127406A1 (en) * | 2000-10-17 | 2005-06-16 | Matsushita Electric Industrial Co., Ltd. | Semiconductor integrated circuit device and method of producing the same |
US7170115B2 (en) * | 2000-10-17 | 2007-01-30 | Matsushita Electric Industrial Co., Ltd. | Semiconductor integrated circuit device and method of producing the same |
US7394156B2 (en) | 2000-10-17 | 2008-07-01 | Matsushita Electric Industrial Co., Ltd. | Semiconductor integrated circuit device and method of producing the same |
US20040041909A1 (en) * | 2002-09-02 | 2004-03-04 | Japan Servo Co., Ltd. | Method of surveillance camera by using rotary electric machine |
US20090305474A1 (en) * | 2004-06-24 | 2009-12-10 | International Business Machines Corporation | Strained-silicon cmos device and method |
US20100244139A1 (en) * | 2004-06-24 | 2010-09-30 | International Business Machines Corporation | Strained-silicon cmos device and method |
US8889490B2 (en) | 2005-01-31 | 2014-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and manufacturing method thereof |
US20100273302A1 (en) * | 2005-01-31 | 2010-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and manufacturing method thereof |
US20060214202A1 (en) * | 2005-03-22 | 2006-09-28 | Zorich Robert S | Apparatus and methods for shielding integrated circuitry |
US7884432B2 (en) | 2005-03-22 | 2011-02-08 | Ametek, Inc. | Apparatus and methods for shielding integrated circuitry |
US7960801B2 (en) | 2005-11-03 | 2011-06-14 | International Business Machines Corporation | Gate electrode stress control for finFET performance enhancement description |
US7935993B2 (en) | 2006-01-10 | 2011-05-03 | International Business Machines Corporation | Semiconductor device structure having enhanced performance FET device |
US20090305471A1 (en) * | 2006-01-11 | 2009-12-10 | International Business Machines Corporation | Thin silicon single diffusion field effect transistor for enhanced drive performance with stress film liners |
US20070158743A1 (en) * | 2006-01-11 | 2007-07-12 | International Business Machines Corporation | Thin silicon single diffusion field effect transistor for enhanced drive performance with stress film liners |
US7790540B2 (en) | 2006-08-25 | 2010-09-07 | International Business Machines Corporation | Structure and method to use low k stress liner to reduce parasitic capacitance |
US7939890B2 (en) * | 2007-06-19 | 2011-05-10 | Renesas Electronics Corporation | Semiconductor device having transistor and capacitor of SOI structure and storing data in nonvolatile manner |
US20080316826A1 (en) * | 2007-06-19 | 2008-12-25 | Renesas Technology Corp. | Semiconductor device having transistor and capacitor of SOI structure and storing data in nonvolatile manner |
US8629501B2 (en) | 2007-09-25 | 2014-01-14 | International Business Machines Corporation | Stress-generating structure for semiconductor-on-insulator devices |
US9305999B2 (en) | 2007-09-25 | 2016-04-05 | Globalfoundries Inc. | Stress-generating structure for semiconductor-on-insulator devices |
US8728905B2 (en) | 2007-11-15 | 2014-05-20 | International Business Machines Corporation | Stress-generating shallow trench isolation structure having dual composition |
US9013001B2 (en) | 2007-11-15 | 2015-04-21 | International Business Machines Corporation | Stress-generating shallow trench isolation structure having dual composition |
US20110230030A1 (en) * | 2010-03-16 | 2011-09-22 | International Business Machines Corporation | Strain-preserving ion implantation methods |
US8598006B2 (en) | 2010-03-16 | 2013-12-03 | International Business Machines Corporation | Strain preserving ion implantation methods |
Also Published As
Publication number | Publication date |
---|---|
JPH08125145A (en) | 1996-05-17 |
US5893728A (en) | 1999-04-13 |
JP3802942B2 (en) | 2006-08-02 |
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Legal Events
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AS | Assignment |
Owner name: MITSUBISHI DENKI KABUSHIKI KAISHA, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:HIDAKA, HIDETO;REEL/FRAME:007643/0593 Effective date: 19950803 |
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Owner name: RENESAS ELECTRONICS CORPORATION, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MITSUBISHI DENKI KABUSHIKI KAISHA;REEL/FRAME:025980/0219 Effective date: 20110307 |
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Owner name: STARBOARD VALUE INTERMEDIATE FUND LP, AS COLLATERAL AGENT, NEW YORK Free format text: PATENT SECURITY AGREEMENT;ASSIGNORS:ACACIA RESEARCH GROUP LLC;AMERICAN VEHICULAR SCIENCES LLC;BONUTTI SKELETAL INNOVATIONS LLC;AND OTHERS;REEL/FRAME:052853/0153 Effective date: 20200604 |
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