US5808314A - Semiconductor emission device with fast wavelength modulation - Google Patents
Semiconductor emission device with fast wavelength modulation Download PDFInfo
- Publication number
- US5808314A US5808314A US08/704,892 US70489296A US5808314A US 5808314 A US5808314 A US 5808314A US 70489296 A US70489296 A US 70489296A US 5808314 A US5808314 A US 5808314A
- Authority
- US
- United States
- Prior art keywords
- electroabsorbant
- layer
- section
- central section
- active layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06258—Controlling the frequency of the radiation with DFB-structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9510545A FR2738678B1 (en) | 1995-09-08 | 1995-09-08 | SEMICONDUCTOR EMISSION DEVICE WITH FAST WAVELENGTH MODULATION |
FR9510545 | 1995-09-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
US5808314A true US5808314A (en) | 1998-09-15 |
Family
ID=9482384
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/704,892 Expired - Lifetime US5808314A (en) | 1995-09-08 | 1996-08-30 | Semiconductor emission device with fast wavelength modulation |
Country Status (4)
Country | Link |
---|---|
US (1) | US5808314A (en) |
EP (1) | EP0762577B1 (en) |
DE (1) | DE69606596T2 (en) |
FR (1) | FR2738678B1 (en) |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6124965A (en) * | 1998-07-15 | 2000-09-26 | Minolta Co., Ltd. | Optical element and light shutter device using the same |
US6148015A (en) * | 1996-12-09 | 2000-11-14 | Alcatel | Device, in particular a semiconductor device, for processing two waves, in particular light waves |
US6185232B1 (en) * | 1998-06-30 | 2001-02-06 | Scientific-Atlanta, Inc. | Wavelength modulated laser for minimizing effects of Rayleigh backscattering |
US6208794B1 (en) * | 1998-10-05 | 2001-03-27 | Alcatel | Multi-section electro-optical monolithic component |
GB2369492A (en) * | 2000-11-28 | 2002-05-29 | Kamelian Ltd | (Ga,In)(N,As) Laser structures using distributed feedback |
US6521471B1 (en) * | 1999-08-31 | 2003-02-18 | Alcatel | Multi-section opto-electronic component |
US6603138B2 (en) * | 2000-02-22 | 2003-08-05 | The Furukawa Electric Co., Ltd. | Quantum-confinement stark effect optical modulator |
US20040113978A1 (en) * | 2002-12-16 | 2004-06-17 | Xuan-Chao Huang | Method of mixing multi-level black and color inks in a printing system |
US20040125429A1 (en) * | 2001-01-30 | 2004-07-01 | Amnon Manassen | Optical modulator |
US20040144971A1 (en) * | 2002-12-16 | 2004-07-29 | Bernhard Stegmuller | Optoelectronic component with a pulse generating device |
EP1703603A1 (en) | 2005-03-17 | 2006-09-20 | Fujitsu Limited | Tunable laser |
US20060222033A1 (en) * | 2005-03-31 | 2006-10-05 | Fujitsu Limited | Optical semiconductor device and driving method thereof |
US7310363B1 (en) * | 1999-09-28 | 2007-12-18 | The Regents Of The University Of California | Integrated wavelength tunable single and two-stage all-optical wavelength converter |
WO2019116657A1 (en) * | 2017-12-15 | 2019-06-20 | 株式会社堀場製作所 | Semiconductor laser |
US20210126430A1 (en) * | 2018-05-21 | 2021-04-29 | Nippon Telegraph And Telephone Corporation | Semiconductor Laser |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6081361A (en) * | 1997-10-17 | 2000-06-27 | Lucent Technologies Inc. | Sub-carrier multiplexing in broadband optical networks |
US6108362A (en) * | 1997-10-17 | 2000-08-22 | Lucent Technologies Inc. | Broadband tunable semiconductor laser source |
US5991061A (en) * | 1997-10-20 | 1999-11-23 | Lucent Technologies Inc. | Laser transmitter for reduced SBS |
US5991323A (en) * | 1997-10-20 | 1999-11-23 | Lucent Technologies Inc. | Laser transmitter for reduced signal distortion |
US6331908B1 (en) | 1999-11-22 | 2001-12-18 | Lucent Technologies Inc. | Optical system for reduced SBS |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4725870A (en) * | 1985-11-18 | 1988-02-16 | American Telephone And Telegraph Company, At&T Bell Laboratories | Silicon germanium photodetector |
DE3928836A1 (en) * | 1989-06-14 | 1990-12-20 | Finnigan Mat Gmbh | Mass spectrometer - has channel plate with entry plate that can be adjusted to remove unwanted ions |
JPH03203268A (en) * | 1989-12-28 | 1991-09-04 | Toshiba Corp | Coherent light receiver |
US5088097A (en) * | 1990-04-04 | 1992-02-11 | Canon Kabushiki Kaisha | Semiconductor laser element capable of changing emission wavelength, and method of driving the same |
EP0484228A1 (en) * | 1990-10-31 | 1992-05-06 | France Telecom | Optical transmission process with wavelength offset and corresponding system |
US5485014A (en) * | 1993-12-30 | 1996-01-16 | The University Of Connecticut | Multiple quantum well birefringent spatial light modulator |
US5493438A (en) * | 1993-03-29 | 1996-02-20 | France Telecom Etablissement Autonome De Droit Public | Amplitude optical modulator using a two-electrode DFB laser structure |
US5611003A (en) * | 1994-03-11 | 1997-03-11 | Alcatel N.V. | Electro-optical semicoductor modulator, and an optical link including the modulator |
-
1995
- 1995-09-08 FR FR9510545A patent/FR2738678B1/en not_active Expired - Fee Related
-
1996
- 1996-08-30 US US08/704,892 patent/US5808314A/en not_active Expired - Lifetime
- 1996-09-05 DE DE69606596T patent/DE69606596T2/en not_active Expired - Fee Related
- 1996-09-05 EP EP96401902A patent/EP0762577B1/en not_active Expired - Lifetime
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4725870A (en) * | 1985-11-18 | 1988-02-16 | American Telephone And Telegraph Company, At&T Bell Laboratories | Silicon germanium photodetector |
DE3928836A1 (en) * | 1989-06-14 | 1990-12-20 | Finnigan Mat Gmbh | Mass spectrometer - has channel plate with entry plate that can be adjusted to remove unwanted ions |
JPH03203268A (en) * | 1989-12-28 | 1991-09-04 | Toshiba Corp | Coherent light receiver |
US5088097A (en) * | 1990-04-04 | 1992-02-11 | Canon Kabushiki Kaisha | Semiconductor laser element capable of changing emission wavelength, and method of driving the same |
EP0484228A1 (en) * | 1990-10-31 | 1992-05-06 | France Telecom | Optical transmission process with wavelength offset and corresponding system |
US5243608A (en) * | 1990-10-31 | 1993-09-07 | France Telecom Etablissement Autonome De Droit Public (Centre National D'etudes Des Telecommunications) | Optical transmission process by wavelength shifting and corresponding system |
US5493438A (en) * | 1993-03-29 | 1996-02-20 | France Telecom Etablissement Autonome De Droit Public | Amplitude optical modulator using a two-electrode DFB laser structure |
US5485014A (en) * | 1993-12-30 | 1996-01-16 | The University Of Connecticut | Multiple quantum well birefringent spatial light modulator |
US5611003A (en) * | 1994-03-11 | 1997-03-11 | Alcatel N.V. | Electro-optical semicoductor modulator, and an optical link including the modulator |
Non-Patent Citations (11)
Title |
---|
European Search Report dated Nov. 28, 1996 for Application EP 96 30 6426. * |
IEEE Journal of Selected Topics in Quantum Electronics, vol. 1, No. 2, Jun. 1995, New York, pp. 516 522, Shim J I, et al., 1.5 UM InGaAsP InP Mutligain Levered MQW DFB LD with High Efficiency and large Bandwidth FM Response . * |
IEEE Journal of Selected Topics in Quantum Electronics, vol. 1, No. 2, Jun. 1995, New York, pp. 516-522, Shim J--I, et al., "1.5-UM InGaAsP-InP Mutligain-Levered-MQW-DFB-LD with High Efficiency and large-Bandwidth FM Response". |
IEEE Journal of Selected Topics in Quantum Electronics, vol. 1, No.2, Jun 1995, New York, pp. 396 400, F. Delorme et al., Subnanosecond Tunable Distributed Bragg Reflector Lasers with an Electrooptical Bragg Section . * |
IEEE Journal of Selected Topics in Quantum Electronics, vol. 1, No.2, Jun 1995, New York, pp. 396-400, F. Delorme et al., "Subnanosecond Tunable Distributed Bragg Reflector Lasers with an Electrooptical Bragg Section". |
IEEE Photonics Technology Letters, vol. 5, No. 3, Mar. 1993, New York pp. 354 356, S. Kuwano et al., 100PS Frequency Switching Without Bit Loss for a 10Gb/s Ask Modulated Signal . * |
IEEE Photonics Technology Letters, vol. 5, No. 3, Mar. 1993, New York pp. 354-356, S. Kuwano et al., "100PS Frequency Switching Without Bit Loss for a 10Gb/s Ask Modulated Signal". |
IEEE Photonics Technology Letters, vol. 7, No. 2, Feb. 1995, pp. 185 187, Allovon M. et al., Monolithic Integration on INP of a Wannier Stark Modulator with a Strained MQW DFB 1.55 M. Laser . * |
IEEE Photonics Technology Letters, vol. 7, No. 2, Feb. 1995, pp. 185-187, Allovon M. et al., "Monolithic Integration on INP of a Wannier Stark Modulator with a Strained MQW DFB 1.55-M. Laser". |
No Author, "Optical Switch," IBM Technical Disclosure Bulletin, vol. 29, No. 6, Nov. 1986, pp. 2708-2709. |
No Author, Optical Switch, IBM Technical Disclosure Bulletin , vol. 29, No. 6, Nov. 1986, pp. 2708 2709. * |
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6148015A (en) * | 1996-12-09 | 2000-11-14 | Alcatel | Device, in particular a semiconductor device, for processing two waves, in particular light waves |
US6185232B1 (en) * | 1998-06-30 | 2001-02-06 | Scientific-Atlanta, Inc. | Wavelength modulated laser for minimizing effects of Rayleigh backscattering |
US6124965A (en) * | 1998-07-15 | 2000-09-26 | Minolta Co., Ltd. | Optical element and light shutter device using the same |
US6208794B1 (en) * | 1998-10-05 | 2001-03-27 | Alcatel | Multi-section electro-optical monolithic component |
US6521471B1 (en) * | 1999-08-31 | 2003-02-18 | Alcatel | Multi-section opto-electronic component |
US7310363B1 (en) * | 1999-09-28 | 2007-12-18 | The Regents Of The University Of California | Integrated wavelength tunable single and two-stage all-optical wavelength converter |
US6603138B2 (en) * | 2000-02-22 | 2003-08-05 | The Furukawa Electric Co., Ltd. | Quantum-confinement stark effect optical modulator |
GB2369492A (en) * | 2000-11-28 | 2002-05-29 | Kamelian Ltd | (Ga,In)(N,As) Laser structures using distributed feedback |
US6999219B2 (en) | 2001-01-30 | 2006-02-14 | 3Dv Systems, Ltd. | Optical modulator |
US20040125429A1 (en) * | 2001-01-30 | 2004-07-01 | Amnon Manassen | Optical modulator |
US20040113978A1 (en) * | 2002-12-16 | 2004-06-17 | Xuan-Chao Huang | Method of mixing multi-level black and color inks in a printing system |
US20040144971A1 (en) * | 2002-12-16 | 2004-07-29 | Bernhard Stegmuller | Optoelectronic component with a pulse generating device |
US7366220B2 (en) | 2005-03-17 | 2008-04-29 | Fujitsu Limited | Tunable laser |
US20060209911A1 (en) * | 2005-03-17 | 2006-09-21 | Fujitsu Limited | Tunable laser |
EP1703603A1 (en) | 2005-03-17 | 2006-09-20 | Fujitsu Limited | Tunable laser |
US20060222033A1 (en) * | 2005-03-31 | 2006-10-05 | Fujitsu Limited | Optical semiconductor device and driving method thereof |
US7633984B2 (en) * | 2005-03-31 | 2009-12-15 | Fujitsu Limited | Optical semiconductor device and driving method thereof |
US20100061414A1 (en) * | 2005-03-31 | 2010-03-11 | Fujitsu Limited | Optical semiconductor device and driving method thereof |
US8073033B2 (en) * | 2005-03-31 | 2011-12-06 | Fujitsu Limited | Optical semiconductor device and driving method thereof |
WO2019116657A1 (en) * | 2017-12-15 | 2019-06-20 | 株式会社堀場製作所 | Semiconductor laser |
JPWO2019116657A1 (en) * | 2017-12-15 | 2020-10-22 | 株式会社堀場製作所 | Semiconductor laser |
US11374380B2 (en) | 2017-12-15 | 2022-06-28 | Horiba, Ltd. | Semiconductor laser |
US20210126430A1 (en) * | 2018-05-21 | 2021-04-29 | Nippon Telegraph And Telephone Corporation | Semiconductor Laser |
Also Published As
Publication number | Publication date |
---|---|
DE69606596D1 (en) | 2000-03-16 |
EP0762577B1 (en) | 2000-02-09 |
FR2738678A1 (en) | 1997-03-14 |
FR2738678B1 (en) | 1997-10-17 |
EP0762577A1 (en) | 1997-03-12 |
DE69606596T2 (en) | 2000-08-24 |
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