US5952772A - Diamond electron emitter - Google Patents
Diamond electron emitter Download PDFInfo
- Publication number
- US5952772A US5952772A US09/010,063 US1006398A US5952772A US 5952772 A US5952772 A US 5952772A US 1006398 A US1006398 A US 1006398A US 5952772 A US5952772 A US 5952772A
- Authority
- US
- United States
- Prior art keywords
- region
- type
- type region
- layer
- electron emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 52
- 239000010432 diamond Substances 0.000 title claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000002019 doping agent Substances 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 230000005855 radiation Effects 0.000 claims abstract description 6
- 238000005468 ion implantation Methods 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229910052724 xenon Inorganic materials 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- -1 boron ions Chemical class 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 2
- 230000005641 tunneling Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000000969 carrier Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J17/00—Gas-filled discharge tubes with solid cathode
- H01J17/02—Details
- H01J17/04—Electrodes; Screens
- H01J17/06—Cathodes
- H01J17/066—Cold cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/04—Electrodes; Screens; Shields
- H01J61/06—Main electrodes
- H01J61/067—Main electrodes for low-pressure discharge lamps
- H01J61/0675—Main electrodes for low-pressure discharge lamps characterised by the material of the electrode
- H01J61/0677—Main electrodes for low-pressure discharge lamps characterised by the material of the electrode characterised by the electron emissive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
- H01J2201/30457—Diamond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/70—Lamps with low-pressure unconstricted discharge having a cold pressure < 400 Torr
- H01J61/76—Lamps with low-pressure unconstricted discharge having a cold pressure < 400 Torr having a filling of permanent gas or gases only
- H01J61/78—Lamps with low-pressure unconstricted discharge having a cold pressure < 400 Torr having a filling of permanent gas or gases only with cold cathode; with cathode heated only by discharge, e.g. high-tension lamp for advertising
Landscapes
- Cold Cathode And The Manufacture (AREA)
- Discharge Lamp (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9702348 | 1997-02-05 | ||
GBGB9702348.5A GB9702348D0 (en) | 1997-02-05 | 1997-02-05 | Electron emitter devices |
Publications (1)
Publication Number | Publication Date |
---|---|
US5952772A true US5952772A (en) | 1999-09-14 |
Family
ID=10807129
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/010,063 Expired - Lifetime US5952772A (en) | 1997-02-05 | 1998-01-21 | Diamond electron emitter |
Country Status (5)
Country | Link |
---|---|
US (1) | US5952772A (en) |
JP (1) | JP3857798B2 (en) |
DE (1) | DE19802435B4 (en) |
FR (1) | FR2759201B1 (en) |
GB (1) | GB9702348D0 (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6351254B2 (en) * | 1998-07-06 | 2002-02-26 | The Regents Of The University Of California | Junction-based field emission structure for field emission display |
US6353285B1 (en) * | 1998-07-30 | 2002-03-05 | Micron Technology, Inc. | Field emission display having reduced optical sensitivity and method |
WO2003019597A1 (en) * | 2001-08-31 | 2003-03-06 | Element Six (Pty) Ltd | Cathodic device comprising ion-implanted emitted substrate having negative electron affinity |
US20030118828A1 (en) * | 2000-02-09 | 2003-06-26 | Jean-Pierre Briand | Method for treating a diamond surface and corresponding diamond surface |
US6847045B2 (en) * | 2001-10-12 | 2005-01-25 | Hewlett-Packard Development Company, L.P. | High-current avalanche-tunneling and injection-tunneling semiconductor-dielectric-metal stable cold emitter, which emulates the negative electron affinity mechanism of emission |
US20060043863A1 (en) * | 2004-08-25 | 2006-03-02 | Ngk Insulators, Ltd. | Electron emitter |
WO2006061686A2 (en) * | 2004-12-10 | 2006-06-15 | Johan Frans Prins | A cathodic device |
US20080070468A1 (en) * | 2002-06-13 | 2008-03-20 | Canon Kabushiki Kaisha | Electron-emitting device and manufacturing method thereof |
US7583016B2 (en) | 2004-12-10 | 2009-09-01 | Canon Kabushiki Kaisha | Producing method for electron-emitting device and electron source, and image display apparatus utilizing producing method for electron-emitting device |
US7682213B2 (en) | 2003-06-11 | 2010-03-23 | Canon Kabushiki Kaisha | Method of manufacturing an electron emitting device by terminating a surface of a carbon film with hydrogen |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4678832B2 (en) * | 2004-07-27 | 2011-04-27 | 日本碍子株式会社 | light source |
JP4827451B2 (en) * | 2004-08-25 | 2011-11-30 | 日本碍子株式会社 | Electron emitter |
KR100708717B1 (en) | 2005-10-11 | 2007-04-17 | 삼성에스디아이 주식회사 | Light emitting device using electron emission and flat display apparatus using the same |
JP2008243739A (en) * | 2007-03-28 | 2008-10-09 | Toshiba Corp | Electron emission element, display device, discharge light emission device, and x-ray emission device |
JP5342470B2 (en) * | 2010-02-23 | 2013-11-13 | パナソニック株式会社 | Field emission electron source and light emitting device using the same |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4801994A (en) * | 1986-03-17 | 1989-01-31 | U.S. Philips Corporation | Semiconductor electron-current generating device having improved cathode efficiency |
US5202571A (en) * | 1990-07-06 | 1993-04-13 | Canon Kabushiki Kaisha | Electron emitting device with diamond |
US5202605A (en) * | 1988-10-31 | 1993-04-13 | Matsushita Electric Industrial Co., Ltd. | Mim cold-cathode electron emission elements |
US5410166A (en) * | 1993-04-28 | 1995-04-25 | The United States Of America As Represented By The Secretary Of The Air Force | P-N junction negative electron affinity cathode |
US5430348A (en) * | 1992-06-01 | 1995-07-04 | Motorola, Inc. | Inversion mode diamond electron source |
US5729094A (en) * | 1996-04-15 | 1998-03-17 | Massachusetts Institute Of Technology | Energetic-electron emitters |
US5880481A (en) * | 1997-02-24 | 1999-03-09 | U.S. Philips Corporation | Electron tube having a semiconductor cathode with lower and higher bandgap layers |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2730271B2 (en) * | 1990-03-07 | 1998-03-25 | 住友電気工業株式会社 | Semiconductor device |
EP0532019B1 (en) * | 1991-09-13 | 1997-12-29 | Canon Kabushiki Kaisha | Semiconductor electron emission device |
-
1997
- 1997-02-05 GB GBGB9702348.5A patent/GB9702348D0/en active Pending
-
1998
- 1998-01-21 US US09/010,063 patent/US5952772A/en not_active Expired - Lifetime
- 1998-01-23 DE DE19802435A patent/DE19802435B4/en not_active Expired - Lifetime
- 1998-01-26 JP JP1242498A patent/JP3857798B2/en not_active Expired - Lifetime
- 1998-02-02 FR FR9801324A patent/FR2759201B1/en not_active Expired - Lifetime
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4801994A (en) * | 1986-03-17 | 1989-01-31 | U.S. Philips Corporation | Semiconductor electron-current generating device having improved cathode efficiency |
US5202605A (en) * | 1988-10-31 | 1993-04-13 | Matsushita Electric Industrial Co., Ltd. | Mim cold-cathode electron emission elements |
US5202571A (en) * | 1990-07-06 | 1993-04-13 | Canon Kabushiki Kaisha | Electron emitting device with diamond |
US5430348A (en) * | 1992-06-01 | 1995-07-04 | Motorola, Inc. | Inversion mode diamond electron source |
US5410166A (en) * | 1993-04-28 | 1995-04-25 | The United States Of America As Represented By The Secretary Of The Air Force | P-N junction negative electron affinity cathode |
US5729094A (en) * | 1996-04-15 | 1998-03-17 | Massachusetts Institute Of Technology | Energetic-electron emitters |
US5880481A (en) * | 1997-02-24 | 1999-03-09 | U.S. Philips Corporation | Electron tube having a semiconductor cathode with lower and higher bandgap layers |
Non-Patent Citations (4)
Title |
---|
Brandes, G.R., et al., "Diamond Junction Cold Cathode," Diamond and Related Materials, vol. 4, 1995, pp. 586-590 (no month). |
Brandes, G.R., et al., Diamond Junction Cold Cathode, Diamond and Related Materials , vol. 4, 1995, pp. 586 590 (no month). * |
Phetchakul, T., et al., "`Backward Diode` Characteristics of p-Type Diamond/n-Type Silicon Heterojunction Diodes,", Japanese Journal of Applied Physics, vol. 35, Part 1, No. 8, Aug. 1996, pp. 4247-4252. |
Phetchakul, T., et al., Backward Diode Characteristics of p Type Diamond/n Type Silicon Heterojunction Diodes, , Japanese Journal of Applied Physics , vol. 35, Part 1, No. 8, Aug. 1996, pp. 4247 4252. * |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6351254B2 (en) * | 1998-07-06 | 2002-02-26 | The Regents Of The University Of California | Junction-based field emission structure for field emission display |
US6353285B1 (en) * | 1998-07-30 | 2002-03-05 | Micron Technology, Inc. | Field emission display having reduced optical sensitivity and method |
US6436788B1 (en) | 1998-07-30 | 2002-08-20 | Micron Technology, Inc. | Field emission display having reduced optical sensitivity and method |
US6518699B2 (en) | 1998-07-30 | 2003-02-11 | Micron Technology, Inc. | Field emission display having reduced optical sensitivity and method |
US20030118828A1 (en) * | 2000-02-09 | 2003-06-26 | Jean-Pierre Briand | Method for treating a diamond surface and corresponding diamond surface |
US6841249B2 (en) * | 2000-02-09 | 2005-01-11 | Universite Pierre Et Marie Curie | Method of a diamond surface and corresponding diamond surface |
WO2003019597A1 (en) * | 2001-08-31 | 2003-03-06 | Element Six (Pty) Ltd | Cathodic device comprising ion-implanted emitted substrate having negative electron affinity |
US6847045B2 (en) * | 2001-10-12 | 2005-01-25 | Hewlett-Packard Development Company, L.P. | High-current avalanche-tunneling and injection-tunneling semiconductor-dielectric-metal stable cold emitter, which emulates the negative electron affinity mechanism of emission |
US20080070468A1 (en) * | 2002-06-13 | 2008-03-20 | Canon Kabushiki Kaisha | Electron-emitting device and manufacturing method thereof |
US7811625B2 (en) | 2002-06-13 | 2010-10-12 | Canon Kabushiki Kaisha | Method for manufacturing electron-emitting device |
US7682213B2 (en) | 2003-06-11 | 2010-03-23 | Canon Kabushiki Kaisha | Method of manufacturing an electron emitting device by terminating a surface of a carbon film with hydrogen |
US20060043863A1 (en) * | 2004-08-25 | 2006-03-02 | Ngk Insulators, Ltd. | Electron emitter |
US7511409B2 (en) | 2004-08-25 | 2009-03-31 | Ngk Insulators, Ltd. | Dielectric film element and composition |
US7583016B2 (en) | 2004-12-10 | 2009-09-01 | Canon Kabushiki Kaisha | Producing method for electron-emitting device and electron source, and image display apparatus utilizing producing method for electron-emitting device |
WO2006061686A3 (en) * | 2004-12-10 | 2006-07-27 | Johan Frans Prins | A cathodic device |
WO2006061686A2 (en) * | 2004-12-10 | 2006-06-15 | Johan Frans Prins | A cathodic device |
Also Published As
Publication number | Publication date |
---|---|
JPH10223130A (en) | 1998-08-21 |
FR2759201B1 (en) | 1999-09-10 |
DE19802435B4 (en) | 2009-12-10 |
DE19802435A1 (en) | 1998-08-06 |
JP3857798B2 (en) | 2006-12-13 |
GB9702348D0 (en) | 1997-03-26 |
FR2759201A1 (en) | 1998-08-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: SMITHS INDUSTRIES PUBLIC LIMITED COMPANY, ENGLAND Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:FOX, NEIL ANTHONY;REEL/FRAME:008968/0647 Effective date: 19980108 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
AS | Assignment |
Owner name: SMITHS GROUP PLC, ENGLAND Free format text: CHANGE OF NAME;ASSIGNOR:SMITHS INDUSTRIES PLC;REEL/FRAME:011566/0432 Effective date: 20001130 |
|
FEPP | Fee payment procedure |
Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
FPAY | Fee payment |
Year of fee payment: 8 |
|
AS | Assignment |
Owner name: GE AVIATION UK, ENGLAND Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SMITHS GROUP PLC (FORMERLY SMITHS INDUSTRIES PLC);REEL/FRAME:020143/0446 Effective date: 20070504 |
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FPAY | Fee payment |
Year of fee payment: 12 |