US6036785A - Method for removing chemical residues from a surface - Google Patents
Method for removing chemical residues from a surface Download PDFInfo
- Publication number
- US6036785A US6036785A US08/850,272 US85027297A US6036785A US 6036785 A US6036785 A US 6036785A US 85027297 A US85027297 A US 85027297A US 6036785 A US6036785 A US 6036785A
- Authority
- US
- United States
- Prior art keywords
- exposed surface
- wavelength
- particle
- time interval
- scrubber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
- B24C5/00—Devices or accessories for generating abrasive blasts
- B24C5/005—Vibratory devices, e.g. for generating abrasive blasts by ultrasonic vibrations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
- B24C3/00—Abrasive blasting machines or devices; Plants
- B24C3/32—Abrasive blasting machines or devices; Plants designed for abrasive blasting of particular work, e.g. the internal surfaces of cylinder blocks
- B24C3/322—Abrasive blasting machines or devices; Plants designed for abrasive blasting of particular work, e.g. the internal surfaces of cylinder blocks for electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Definitions
- This invention relates to use of a slurry of particles to quickly and controllably clean material surfaces.
- Fabrication of semiconductors, of optical components and of other similar devices often requires many steps, some of which require cleaning of a device surface before the next step can be initiated. If a preceding step used a chemical reaction to alter or modify an exposed surface, a subsequent surface cleaning step is usually required in which chemical residues are removed before the next chemical can be applied. If hundreds of thousands or millions of these devices are being produced each day, each surface cleaning step must be carried out quickly and, preferably, automatically.
- What is needed is a technique for quickly and controllably cleaning chemical residues and macroscopic accumulations of particles from an exposed surface of a material, where the exposed surface is not abraded or otherwise altered.
- the surface should be cleaned roughly uniformly and should not have to be turned or otherwise moved until the cleaning process is completed.
- the procedure should be carried out in a single chamber or container.
- the invention directs a slurry of water or other suitable liquid and relatively "soft" microscopic scrubber particles, as a jet or stream against an exposed surface of a solid object to be cleaned, to remove most or all of the chemical residues and microscopic accumulations from the surface in a container.
- the slurry of liquid and microscopic scrubber particles is drained from the container, and the container (or another container containing the object) is refilled with a rinse liquid to partly or fully submerge the object.
- the rinse liquid is then subjected to ultrasonic wave action, to quickly and efficiently remove any remaining chemical residues, microscopic accumulations and scrubber particles from the exposed surface(s).
- the object may be a semiconductor wafer or an optical component in process.
- the scrubber particles preferably include silicon-based and/or carbon-based components, preferably have diameters between 0.3 ⁇ m and 100 ⁇ m, and need not be uniform in size or shape.
- FIG. 1 illustrates use of the invention in one embodiment.
- FIG. 2 graphically illustrates a range of liquid slurry particle mixes that may be used in practicing the invention.
- FIGS. 3 and 4 are graphical views of ultrasonic frequency as a function of time that may be used in practicing the invention.
- FIG. 5 illustrates schematically the scrubbing action of the slurry on an exposed surface.
- FIG. 6 is a graphical view illustrating pulsed slurry flow.
- FIG. 7 is a flow chart illustrating the procedure of the invention in one embodiment.
- one or more disks, plates or other solid objects 11A, 11B, 11C of material, presented in a container 13, have chemical residues and macroscopic accumulations (referred to collectively as "residues") of particles thereon that are to be removed from one or more exposed surfaces of the objects.
- a streaming tube 15 directs a jet or stream of slurry 17, including a liquid 19 and a plurality of relatively soft microscopic scrubber particles 21, against one or more exposed surfaces 12A, 12B, 12C of the objects 11A, 11B, 11C to remove most or all of the residues.
- the slurry 17 and removed residues are drained from the container 13, and the container is then filled with a rinse liquid 23 to partly or fully immerse the objects 11A, 11B, 11C in the rinse liquid.
- the scrubber particles may be silicon-based or carbon-based or contain some other suitable material that will not cause abrasion or ablation of the exposed surfaces 12A, 12B, 12C of the objects 11A, 11B, 11C.
- the scrubber particles in the slurry may be soft grit particles of substantially pure silicon or carbon or may be polypropylene, PVDF, Teflon or some other chemical that is not substantially abrasive as long as the particles are not mechanically pressed with great force against the exposed surfaces 12A, 12B, 12C of the objects 11A, 11B, 11C.
- Scrubber particle sizes are preferably in the range 0.3 ⁇ m-100 ⁇ m and need not be substantially uniform.
- the scrubber particle sizes in the slurry 17 may be "graded," as illustrated in FIG. 2, and may include two or more selected sizes in a graded mixture that is approximately optimal for the disk material and the characteristics of the residues to be removed from the exposed surfaces 12A, 12B, 12C.
- the volume fraction ⁇ p of the scrubber particles in the slurry preferably lies in the range 0.01 ⁇ p ⁇ 0.5 but may be smaller than 0.01 and may be as large as about 0.75.
- the rinse liquid 23 is then subjected to ultrasonic wave motion, produced by one or more ultrasonic frequency generators 25A and 25B positioned contiguous to the container 13 or within the rinse liquid.
- the ultrasonic wave motion may produce cavitation within or adjacent to a boundary layer formed at the exposed surfaces 12A, 12B, 12C, which may help loosen the remaining chemical residues and accumulations of scrubber particles and other particles.
- the invention does not depend upon whether this or any other explanation is correct.
- the ultrasonic wave motion produces a "scrubbing" action at the exposed surfaces 12A, 12B, 12C, often in the direction(s) of ultrasonic wave displacement, which is continued for a selected time interval having a length in the range 10 sec to 600 sec, or longer if desired.
- One, two or more ultrasonic frequency generators 25A or 25B are preferably, but not necessarily, positioned so that the ultrasonic waves produced have wave displacements that are approximately parallel to an exposed surface 12A of an object 11A from which residues, accumulations and scrubber particles are to be removed. In practice, if the exposed surfaces 12A, 12B, 12C approximately define two or more substantially non-parallel planes, this may require positioning of two or more ultrasonic frequency generators 25A and 25B as shown. Otherwise, use of a single ultrasonic frequency generator, 25A or 25B, may suffice here.
- the ultrasonic frequencies used here lie in a range between 20 kHz and 1 MHz and are preferably chosen to produce wavelengths in the rinse liquid 23 that are substantially the same as, or somewhat smaller than, the expected range of residues to be removed.
- the ultrasonic frequencies may be "chirped" or varied in a systematic manner as a function of time through a range of such frequencies, with corresponding ultrasonic wavelengths that cover a range of sizes of residues to be removed.
- FIGS. 3 and 4 illustrate two suitable choices of time-dependent variation of ultrasonic frequencies (chirping) produced by an ultrasonic frequency generator.
- the lower frequency bound f L and upper bound f U may be chosen to include between these two bounds a full range of sizes of residues that are expected to be encountered on the exposed surfaces 12A, 12B, 12C.
- a range of particle sizes 0.3 ⁇ m-100 ⁇ m corresponds to a range of frequencies between 15 MHz and 51 GHz.
- the momentum transfer per unit time and per unit area from the slurry 17 to an exposed surface 12A of a object 11A may be roughly estimated as
- Equation (1) provides an estimate of the scrubbing force exerted on the exposed surface 12A of the object 11A that is used to scrub or otherwise remove residues from the exposed surface.
- the forces holding the residues and particles to the exposed surface 12A may be van der Waals forces, covalent forces, ionic forces or other suitable molecular effective adherence forces, and these adherence forces are expected to vary with the grazing angle ⁇ , probably decreasing with decreasing grazing angle.
- the amount of residues removed from the exposed surface 12A may vary in a complex way with the grazing angle ⁇ and need not be monotonically increasing with increasing ⁇ . Residue removal will likely vary with the residues to be removed, with the material that makes up the exposed particles, as well as with grazing angle ⁇ .
- the delivery of the slurry 17 may be pulsed, as illustrated by the curve 17p in the graphical view in FIG. 6, rather than continuous and relatively constant, as illustrated by the curve 17c in FIG. 6, with a pulse interval length ⁇ t(pulse) in the range 0.25-10 sec, and with a "quiet" interval length ⁇ t(quiet) in the range 5-30 sec., during which the slurry flow is relatively small or zero.
- Use of a pulsed slurry flow may reduce the tendency of the slurry, which is reflected from and leaves the exposed surface 12A in the general direction SL2 to interfere with the scrubbing action of the slurry that is approaching the exposed surface in the general direction in FIG. 5.
- FIG. 7 is a flow chart illustrating practice of the invention in one embodiment.
- step 71 an object having an exposed surface to be cleaned is exposed to a jet or stream of slurry to remove chemical residues and particle accumulations on the exposed surface(s). Most or all of the residues and accumulations will be removed from the exposed surface in this step, but some chemical residues, particle accumulations and scrubber particles may remain on the exposed surface.
- the slurry is allowed to drain away in step 73.
- the object is positioned in a liquid container and is partly or fully submerged in a rinse liquid so that the exposed surface is exposed to the rinse liquid.
- step 77 the rinse liquid is subjected to ultrasonic wave action that removes most or all of the remaining chemical residues, particle accumulations and scrubber particles from the exposed surface.
- step 79 the rinse liquid and remaining chemical residues, particle accumulations and scrubber particles are drained from the container. After the object has dried, the exposed surface of the object is substantially free of rinse liquid and remaining chemical residues, particle accumulations and scrubber particles.
Abstract
Description
Δp={ρ.sub.L (1-η.sub.p)(v.sub.c.sup.2 +σ.sup.2)/3+2(η.sub.p.sup.exp)(m.sub.p v.sub.c.sup.2 /V.sub.p)}sin θ, (1)
σ.sup.2 =k.sub.B T/m, (2)
exp≈1-1.33, (3)
Claims (27)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US08/850,272 US6036785A (en) | 1997-05-02 | 1997-05-02 | Method for removing chemical residues from a surface |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/850,272 US6036785A (en) | 1997-05-02 | 1997-05-02 | Method for removing chemical residues from a surface |
Publications (1)
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US6036785A true US6036785A (en) | 2000-03-14 |
Family
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US08/850,272 Expired - Lifetime US6036785A (en) | 1997-05-02 | 1997-05-02 | Method for removing chemical residues from a surface |
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Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6270584B1 (en) * | 1997-12-03 | 2001-08-07 | Gary W. Ferrell | Apparatus for drying and cleaning objects using controlled aerosols and gases |
US6280294B1 (en) * | 1997-09-30 | 2001-08-28 | Hoya Corporation | Polishing method, polishing device, glass substrate for magnetic recording medium, and magnetic recording medium |
US20020029788A1 (en) * | 2000-06-26 | 2002-03-14 | Applied Materials, Inc. | Method and apparatus for wafer cleaning |
US6511914B2 (en) * | 1999-01-22 | 2003-01-28 | Semitool, Inc. | Reactor for processing a workpiece using sonic energy |
US6526995B1 (en) * | 1999-06-29 | 2003-03-04 | Intersil Americas Inc. | Brushless multipass silicon wafer cleaning process for post chemical mechanical polishing using immersion |
US6783599B2 (en) | 2001-07-19 | 2004-08-31 | International Business Machines Corporation | Method of cleaning contaminants from the surface of a substrate |
US20050205109A1 (en) * | 2000-09-11 | 2005-09-22 | Kabushiki Kaisha Toshiba | Washing method, method of manufacturing semiconductor device and method of manufacturing active matrix-type display device |
US20060095595A1 (en) * | 2004-10-29 | 2006-05-04 | International Business Machines Corporation | Shared simultaneously-connected drives |
US20060260659A1 (en) * | 2000-06-26 | 2006-11-23 | Steven Verhaverbeke | Method and apparatus for wafer cleaning |
US20090114246A1 (en) * | 2007-11-01 | 2009-05-07 | Nishant Sinha | Methods For Treating Surfaces |
US20130119015A1 (en) * | 2010-04-01 | 2013-05-16 | Hoya Corporation | Manufacturing method of a glass substrate for a magnetic disk |
WO2013078934A1 (en) * | 2011-11-28 | 2013-06-06 | 无锡华润上华科技有限公司 | Chemical mechanical polishing method for reducing residual slurry |
WO2014037059A1 (en) * | 2012-09-10 | 2014-03-13 | Vulkan Inox Gmbh | Method and blasting means for producing a satinized finish on an aluminium substrate |
CN103691714A (en) * | 2013-12-19 | 2014-04-02 | 合肥京东方光电科技有限公司 | Washing device and washing method |
US20180264524A1 (en) * | 2017-03-17 | 2018-09-20 | Toshiba Memory Corporation | Template cleaning method, template cleaning apparatus, and cleaning liquid |
CN109243795A (en) * | 2018-10-11 | 2019-01-18 | 广东冠能电力科技发展有限公司 | Dry-type air-core reactor total incapsulation process for protecting technology based on ultrasonic technology |
US10512946B2 (en) * | 2015-09-03 | 2019-12-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gigasonic cleaning techniques |
US20200294821A1 (en) * | 2019-03-14 | 2020-09-17 | Chen-Hao WU | Post cmp cleaning apparatus and post cmp cleaning methods |
CN111921976A (en) * | 2020-07-15 | 2020-11-13 | 中国电子科技集团公司第二十四研究所 | Method for improving cleaning quality of wedge welding cleaver |
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Cited By (52)
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US7438630B2 (en) | 1997-09-30 | 2008-10-21 | Hoya Corporation | Polishing method, polishing device, glass substrate for magnetic recording medium, and magnetic recording medium |
US6280294B1 (en) * | 1997-09-30 | 2001-08-28 | Hoya Corporation | Polishing method, polishing device, glass substrate for magnetic recording medium, and magnetic recording medium |
US7690969B2 (en) | 1997-09-30 | 2010-04-06 | Hoya Corporation | Polishing method, polishing device, glass substrate for magnetic recording medium, and magnetic recording medium |
US6641465B2 (en) | 1997-09-30 | 2003-11-04 | Hoya Corporation | Polishing method, polishing device, glass substrate for magnetic recording medium, and magnetic recording medium |
US20090111360A1 (en) * | 1997-09-30 | 2009-04-30 | Hoya Corporation | Polishing Method, Polishing Device, Glass Substrate for Magnetic Recording Medium, and Magnetic Recording Medium |
US7494401B2 (en) | 1997-09-30 | 2009-02-24 | Hoya Corporation | Polishing method, polishing device, glass substrate for magnetic recording medium, and magnetic recording medium |
US20060121834A1 (en) * | 1997-09-30 | 2006-06-08 | Hoya Corporation | Polishing method, polishing device, glass substrate for magnetic recording medium, and magnetic recording medium |
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US6511914B2 (en) * | 1999-01-22 | 2003-01-28 | Semitool, Inc. | Reactor for processing a workpiece using sonic energy |
US6526995B1 (en) * | 1999-06-29 | 2003-03-04 | Intersil Americas Inc. | Brushless multipass silicon wafer cleaning process for post chemical mechanical polishing using immersion |
US7451774B2 (en) * | 2000-06-26 | 2008-11-18 | Applied Materials, Inc. | Method and apparatus for wafer cleaning |
US20080083437A1 (en) * | 2000-06-26 | 2008-04-10 | Steven Verhaverbeke | Method and apparatus for wafer cleaning |
US20060260660A1 (en) * | 2000-06-26 | 2006-11-23 | Steven Verhaverbeke | Method and apparatus for wafer cleaning |
US20060260644A1 (en) * | 2000-06-26 | 2006-11-23 | Steven Verhaverbeke | Method and apparatus for wafer cleaning |
US20060260643A1 (en) * | 2000-06-26 | 2006-11-23 | Steven Verhaverbeke | Method and apparatus for wafer cleaning |
US20060266387A1 (en) * | 2000-06-26 | 2006-11-30 | Steven Verhaverbeke | Method and apparatus for wafer cleaning |
US20060266392A1 (en) * | 2000-06-26 | 2006-11-30 | Steven Verhaverbeke | Method and apparatus for wafer cleaning |
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US20080083436A1 (en) * | 2000-06-26 | 2008-04-10 | Steven Verhaverbeke | Method and apparatus for wafer cleaning |
US7819985B2 (en) | 2000-06-26 | 2010-10-26 | Applied Materials, Inc. | Method and apparatus for wafer cleaning |
US20060260659A1 (en) * | 2000-06-26 | 2006-11-23 | Steven Verhaverbeke | Method and apparatus for wafer cleaning |
US7836901B2 (en) | 2000-06-26 | 2010-11-23 | Applied Materials, Inc. | Method and apparatus for wafer cleaning |
US20080314424A1 (en) * | 2000-06-26 | 2008-12-25 | Steven Verhaverbeke | Method and apparatus for wafer cleaning |
US20090020144A1 (en) * | 2000-06-26 | 2009-01-22 | Steven Verhaverbeke | Method and apparatus for cleaning a substrate |
US20060260642A1 (en) * | 2000-06-26 | 2006-11-23 | Steven Verhaverbeke | Method and apparatus for wafer cleaning |
US20050205109A1 (en) * | 2000-09-11 | 2005-09-22 | Kabushiki Kaisha Toshiba | Washing method, method of manufacturing semiconductor device and method of manufacturing active matrix-type display device |
US20080210257A1 (en) * | 2000-09-11 | 2008-09-04 | Kabushiki Kaisha Toshiba | Washing method, method of manufacturing semiconductor device and method of manufacturing active matrix-type display device |
US6783599B2 (en) | 2001-07-19 | 2004-08-31 | International Business Machines Corporation | Method of cleaning contaminants from the surface of a substrate |
US20060095595A1 (en) * | 2004-10-29 | 2006-05-04 | International Business Machines Corporation | Shared simultaneously-connected drives |
US20090114246A1 (en) * | 2007-11-01 | 2009-05-07 | Nishant Sinha | Methods For Treating Surfaces |
US7749327B2 (en) * | 2007-11-01 | 2010-07-06 | Micron Technology, Inc. | Methods for treating surfaces |
US20130119015A1 (en) * | 2010-04-01 | 2013-05-16 | Hoya Corporation | Manufacturing method of a glass substrate for a magnetic disk |
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US9962811B2 (en) | 2012-09-10 | 2018-05-08 | Vulkan Inox Gmbh | Method and blasting means for producing a sanitized finish on an aluminum substrate |
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US10335924B2 (en) | 2012-09-10 | 2019-07-02 | Vulkan Inox Gmbh | Method and blasting means for producing a satinized finish on an aluminium substrate |
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US10512946B2 (en) * | 2015-09-03 | 2019-12-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gigasonic cleaning techniques |
US20180264524A1 (en) * | 2017-03-17 | 2018-09-20 | Toshiba Memory Corporation | Template cleaning method, template cleaning apparatus, and cleaning liquid |
CN109243795A (en) * | 2018-10-11 | 2019-01-18 | 广东冠能电力科技发展有限公司 | Dry-type air-core reactor total incapsulation process for protecting technology based on ultrasonic technology |
US20200294821A1 (en) * | 2019-03-14 | 2020-09-17 | Chen-Hao WU | Post cmp cleaning apparatus and post cmp cleaning methods |
CN111921976A (en) * | 2020-07-15 | 2020-11-13 | 中国电子科技集团公司第二十四研究所 | Method for improving cleaning quality of wedge welding cleaver |
CN111921976B (en) * | 2020-07-15 | 2022-02-01 | 中国电子科技集团公司第二十四研究所 | Method for improving cleaning quality of wedge welding cleaver |
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