US6150703A - Lateral mode suppression in semiconductor bulk acoustic resonator (SBAR) devices using tapered electrodes, and electrodes edge damping materials - Google Patents
Lateral mode suppression in semiconductor bulk acoustic resonator (SBAR) devices using tapered electrodes, and electrodes edge damping materials Download PDFInfo
- Publication number
- US6150703A US6150703A US09/106,729 US10672998A US6150703A US 6150703 A US6150703 A US 6150703A US 10672998 A US10672998 A US 10672998A US 6150703 A US6150703 A US 6150703A
- Authority
- US
- United States
- Prior art keywords
- sbar
- electrodes
- lateral
- acoustic
- recited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 title claims abstract description 16
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 238000013016 damping Methods 0.000 title claims abstract description 13
- 230000001629 suppression Effects 0.000 title 1
- 239000004642 Polyimide Substances 0.000 claims abstract description 4
- 229920001721 polyimide Polymers 0.000 claims abstract description 4
- 239000003190 viscoelastic substance Substances 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 239000002305 electric material Substances 0.000 claims 3
- 238000003780 insertion Methods 0.000 abstract description 6
- 230000037431 insertion Effects 0.000 abstract description 6
- 230000001902 propagating effect Effects 0.000 abstract description 3
- 238000001914 filtration Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005405 multipole Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
Claims (7)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/106,729 US6150703A (en) | 1998-06-29 | 1998-06-29 | Lateral mode suppression in semiconductor bulk acoustic resonator (SBAR) devices using tapered electrodes, and electrodes edge damping materials |
TW088108136A TW463459B (en) | 1998-06-29 | 1999-05-18 | Lateral mode suppression in semiconductor bulk acoustic resonator (SBAR) devices using tapered electrodes and electrodes edge damping materials |
KR1019990019393A KR100333512B1 (en) | 1998-06-29 | 1999-05-28 | Semiconductor bulk acoustic resonator (sbar) having means for suppressing lateral mode resonances and method for forming the same |
DE19928596A DE19928596C2 (en) | 1998-06-29 | 1999-06-22 | Cross-mode suppression in solid-state acoustic semiconductor resonator (SBAR) devices using tapered electrodes and electrode edge damping materials |
JP11180160A JP3136141B2 (en) | 1998-06-29 | 1999-06-25 | Lateral mode suppressing semiconductor bulk acoustic resonator (SBAR) device using tapered electrode and electrode edge damping material |
US09/407,199 US6381820B1 (en) | 1998-06-29 | 1999-09-28 | Semiconductor bulk acoustic resonator with suppressed lateral modes |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/106,729 US6150703A (en) | 1998-06-29 | 1998-06-29 | Lateral mode suppression in semiconductor bulk acoustic resonator (SBAR) devices using tapered electrodes, and electrodes edge damping materials |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/407,199 Continuation US6381820B1 (en) | 1998-06-29 | 1999-09-28 | Semiconductor bulk acoustic resonator with suppressed lateral modes |
Publications (1)
Publication Number | Publication Date |
---|---|
US6150703A true US6150703A (en) | 2000-11-21 |
Family
ID=22312946
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/106,729 Expired - Lifetime US6150703A (en) | 1998-06-29 | 1998-06-29 | Lateral mode suppression in semiconductor bulk acoustic resonator (SBAR) devices using tapered electrodes, and electrodes edge damping materials |
US09/407,199 Expired - Lifetime US6381820B1 (en) | 1998-06-29 | 1999-09-28 | Semiconductor bulk acoustic resonator with suppressed lateral modes |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/407,199 Expired - Lifetime US6381820B1 (en) | 1998-06-29 | 1999-09-28 | Semiconductor bulk acoustic resonator with suppressed lateral modes |
Country Status (5)
Country | Link |
---|---|
US (2) | US6150703A (en) |
JP (1) | JP3136141B2 (en) |
KR (1) | KR100333512B1 (en) |
DE (1) | DE19928596C2 (en) |
TW (1) | TW463459B (en) |
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US6323744B1 (en) | 2000-02-04 | 2001-11-27 | Agere Systems Guardian Corp. | Grounding of TFR ladder filters |
US6355498B1 (en) * | 2000-08-11 | 2002-03-12 | Agere Systems Guartian Corp. | Thin film resonators fabricated on membranes created by front side releasing |
US6377136B1 (en) | 2000-02-04 | 2002-04-23 | Agere Systems Guardian Corporation | Thin film resonator filter having at least one component with different resonant frequency sets or electrode capacitance |
US6424237B1 (en) * | 2000-12-21 | 2002-07-23 | Agilent Technologies, Inc. | Bulk acoustic resonator perimeter reflection system |
US6437667B1 (en) | 2000-02-04 | 2002-08-20 | Agere Systems Guardian Corp. | Method of tuning thin film resonator filters by removing or adding piezoelectric material |
US6486751B1 (en) | 2000-09-26 | 2002-11-26 | Agere Systems Inc. | Increased bandwidth thin film resonator having a columnar structure |
US20020185936A1 (en) * | 1999-11-01 | 2002-12-12 | Barber Bradley Paul | Incremental tuning process for electrical resonators based on mechanical motion |
US6524971B1 (en) | 1999-12-17 | 2003-02-25 | Agere Systems, Inc. | Method of deposition of films |
US6587212B1 (en) | 2000-10-31 | 2003-07-01 | Agere Systems Inc. | Method and apparatus for studying vibrational modes of an electro-acoustic device |
GB2383906A (en) * | 2002-01-08 | 2003-07-09 | Murata Manufacturing Co | Thin film piezoelectric resonator (FBAR) with improved mode suppression |
US6603241B1 (en) | 2000-05-23 | 2003-08-05 | Agere Systems, Inc. | Acoustic mirror materials for acoustic devices |
US6674291B1 (en) | 2000-10-30 | 2004-01-06 | Agere Systems Guardian Corp. | Method and apparatus for determining and/or improving high power reliability in thin film resonator devices, and a thin film resonator device resultant therefrom |
US6693500B2 (en) | 2001-06-25 | 2004-02-17 | Samsung Electro-Mechanics Co., Ltd. | Film bulk acoustic resonator with improved lateral mode suppression |
WO2004025832A1 (en) * | 2002-09-12 | 2004-03-25 | Philips Intellectual Property & Standards Gmbh | Bulk acoustic wave resonator with means for suppression of pass-band ripple in bulk acoustic wave filters |
EP1406386A2 (en) * | 2002-09-25 | 2004-04-07 | Murata Manufacturing Co., Ltd. | Piezoelectric resonator, piezoelectric filter, and communication apparatus |
US6743731B1 (en) | 2000-11-17 | 2004-06-01 | Agere Systems Inc. | Method for making a radio frequency component and component produced thereby |
US6746577B1 (en) | 1999-12-16 | 2004-06-08 | Agere Systems, Inc. | Method and apparatus for thickness control and reproducibility of dielectric film deposition |
US6788170B1 (en) * | 1999-07-19 | 2004-09-07 | Nokia Corporation | Resonator structure having a dampening material and a filter having such a resonator structure |
US20040227591A1 (en) * | 2001-11-06 | 2004-11-18 | Infineon Technologies Ag | Filter device and method of fabricating a filter device |
US20040263287A1 (en) * | 2003-06-30 | 2004-12-30 | Eyal Ginsburg | Tapered electrode in an acoustic resonator |
US20050012570A1 (en) * | 2003-04-30 | 2005-01-20 | Christian Korden | Component functioning with bulk acoustic waves having coupled resonators |
US20050099094A1 (en) * | 2003-10-20 | 2005-05-12 | Tokihiro Nishihara | Piezoelectric thin-film resonator and filter using the same |
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US20060071736A1 (en) * | 2004-10-01 | 2006-04-06 | Ruby Richard C | Acoustic resonator performance enhancement using alternating frame structure |
US20060091764A1 (en) * | 2004-10-28 | 2006-05-04 | Fujitsu Media Devices Limited | Piezoelectric thin-film resonator and filter using the same |
US20060255883A1 (en) * | 2005-05-13 | 2006-11-16 | Kabushiki Kaisha Toshiba | Film bulk acoustic resonator and filter circuit |
US20070013463A1 (en) * | 2005-07-18 | 2007-01-18 | Samsung Electronics Co., Ltd. | Film bulk acoustic wave resonator and manufacturing method thereof |
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US7296329B1 (en) | 2000-02-04 | 2007-11-20 | Agere Systems Inc. | Method of isolation for acoustic resonator device |
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US20130063226A1 (en) * | 2011-09-14 | 2013-03-14 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Double film bulk acoustic resonator having electrode edge alignments providing improved quality factor or electromechanical coupling coefficient |
US8796904B2 (en) | 2011-10-31 | 2014-08-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer |
US9425764B2 (en) | 2012-10-25 | 2016-08-23 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having composite electrodes with integrated lateral features |
US9444426B2 (en) | 2012-10-25 | 2016-09-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having integrated lateral feature and temperature compensation feature |
US11736088B2 (en) | 2016-11-15 | 2023-08-22 | Global Communication Semiconductors, Llc | Film bulk acoustic resonator with spurious resonance suppression |
US10601391B2 (en) | 2016-11-15 | 2020-03-24 | Global Communication Semiconductors, Llc. | Film bulk acoustic resonator with spurious resonance suppression |
US11764750B2 (en) | 2018-07-20 | 2023-09-19 | Global Communication Semiconductors, Llc | Support structure for bulk acoustic wave resonator |
WO2020134804A1 (en) * | 2018-12-26 | 2020-07-02 | 天津大学 | Resonator with extension structure at connection portion of top electrode, filter and electronic device |
US11817839B2 (en) | 2019-03-28 | 2023-11-14 | Global Communication Semiconductors, Llc | Single-crystal bulk acoustic wave resonator and method of making thereof |
DE102019120558A1 (en) * | 2019-07-30 | 2021-02-04 | RF360 Europe GmbH | BAW resonator with reduced lateral modes |
WO2021018770A1 (en) | 2019-07-30 | 2021-02-04 | RF360 Europe GmbH | Baw resonator with reduced lateral modes |
US11909373B2 (en) | 2019-10-15 | 2024-02-20 | Global Communication Semiconductors, Llc | Bulk acoustic resonator structures with improved edge frames |
Also Published As
Publication number | Publication date |
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TW463459B (en) | 2001-11-11 |
DE19928596C2 (en) | 2001-11-15 |
JP2000031552A (en) | 2000-01-28 |
JP3136141B2 (en) | 2001-02-19 |
DE19928596A1 (en) | 2000-01-05 |
KR100333512B1 (en) | 2002-04-24 |
US6381820B1 (en) | 2002-05-07 |
KR20000005728A (en) | 2000-01-25 |
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