US6159655A - Positive photoresist composition for exposure to far ultraviolet light - Google Patents
Positive photoresist composition for exposure to far ultraviolet light Download PDFInfo
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- US6159655A US6159655A US09/264,036 US26403699A US6159655A US 6159655 A US6159655 A US 6159655A US 26403699 A US26403699 A US 26403699A US 6159655 A US6159655 A US 6159655A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/107—Polyamide or polyurethane
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
Definitions
- the present invention relates to a positive photoresist composition used in an ultramicrolithographic process, e.g., for the production of VLSI and high capacity chips, or other photofabrication processes.
- the invention relates to a positive photoresist composition capable of forming highly precise patterns by using light in the far ultraviolet region, including excimer laser beams.
- the degree of integration of integrated circuits is becoming much higher, and the photolithography for superfine patterns having a line width of half micron or below is beginning to be required in the production of semiconductor substrates for VLSI and the like.
- the wavelengths used in an exposure apparatus for photolithography are becoming shorter, and nowadays the use of far ultraviolet light in shorter wavelength region, or excimer laser beams (XeCl, KrF, ArF), is being investigated.
- the novolak-naphthoquinone diazide resist is inadequate to be used in the pattern formation by the photolithography in the far ultraviolet region. This is because both novolak resin and naphthoquinone diazide compound have strong absorption in such a wavelength region to inhibit the light from reaching to the bottom of the resist; as a result, the resist has low sensitivity and can merely provide a tapered pattern profile.
- the chemical amplification-utilized positive resist composition is a composition designed such that it generates an acid in the exposed part upon irradiation with an actinic ray, such as far ultraviolet light, and causes a reaction using the acid as catalyst to make a difference of solubility in a developer between the irradiated part and the non-irradiated part.
- an actinic ray such as far ultraviolet light
- the chemical amplification resist is roughly divided into three types, the so-called two-component, two point five-component and three-component types.
- the chemical amplification resist of two-component type is a combination of a compound capable of generating an acid by photolysis (herein after referred to as a "photoacid generator") with a binder resin.
- the binder resin combined with such a compound has, in a molecule, groups capable of being decomposed by the action of an acid to increase the solubility of resin in an alkali developer (which are hereinafter referred to as "acid-decomposable groups").
- the resist of two point five-component type further contains a low molecular weight compound having an acid-decomposable group in addition to the above two components.
- the resist of three-component type contains a photoacid generator, an alkali-soluble resin and the above low molecular weight compound.
- Examples of a combination of an photoacid generator with a resin capable of changing its solubility by the action of an acid, which is used for the resist of two- or two point five-component type include the combination of a photoacid generator with acetal or an O, N-acetal compound (JP-A-48-89003, wherein the term "JP-A" means an unexamined published Japanese patent application”), the combination of a photoacid generator with an orthoester or amidoacetal compound (JP-A-51-120714), the combination of a photoacid generator with a polymer having acetal or ketal groups in its main chain (JP-A-53-133429), the combination of a photoacid generator with an enol ether compound (JP-A-55-12995), the combination of a photoacid generator with an N-acyliminocarbonic acid compound (JP-A-55-126236), the combination of a photoacid generator with a polymer having orthoester groups in its main chain
- the chemical amplification resist is a photoresist suitable for exposure to ultraviolet light or far ultraviolet light. Further, it is necessary for the resist to meet the requirements for characteristics from the viewpoint of practical use.
- the resist compositions comprising a hydroxystyrene polymer, which shows only slight absorption of the laser beam, into which acetal or ketal groups are introduced as protective groups, have been proposed in, e.g., JP-A-2-141636, JP-A-2-19847, JP-A-4-219757 and JP-A-5-281745.
- compositions which are similar to the above, except that t-butoxycarbonyloxy or p-tetrahydropyranyloxy groups are introduced thereinto as acid-decomposable groups have been proposed in, e.g., JP-A-2-209977, JP-A-3-206458 and JP-A-2-19847.
- those compositions are suitable for the case of using the KrF excimer laser beam of 248 nm, they have low sensitivity to an ArF excimer laser beam because their absorbance at the wavelength of ArF excimer laser beam is substantially too high.
- This drawback is accompanied with other drawbacks of causing deterioration in, e.g., definition, focus latitude and pattern profile. Therefore, it is necessary for those compositions to be improved in many points.
- photoresist compositions suitable for the ArF excimer light source the combinations of (meth) acrylic resins showing less absorption of light than partially hydroxylated styrene resins with compounds capable of generating acids upon exposure are proposed in, e.g., JP-A-7-199467 and JP-A-7-252324.
- JP-A-6-289615 discloses the acrylic resin having carboxyl groups the oxygen atoms of which are bonded to tertiary carbon-containing organic groups to form ester linkages.
- JP-A-7-234511 discloses the acid-decomposable resin containing both acrylate and fumarate as constitutional repeating units.
- those resins cannot provide satisfactory pattern profile and adhesiveness to a substrate. In other words, they are not successful in ensuring satisfactory resist properties.
- the photoresist compositions proposed for the purpose of improving dry etching resistance, sensitivity and so on use resins into which alicyclic hydrocarbon groups are introduced, as the resins to be combined with compounds capable of generating acids upon exposure to light.
- the photoresist composition using a resin having alicyclic hydrocarbon moieties and acrylate, fumarate, acrylonitrile, maleimide or maleic anhydride moieties in its main chain is proposed in JP-A-10-10739.
- JP-A-9-325498 is proposed the photoresist composition using a resin containing norbornane or cyclohexane moieties, which are each substituted with at least one acid group such as carboxylic group, as the alicyclic groups in the main chain.
- the photoresist compositions using resins containing norbornane moieties in their main chains are proposed in WO 97/33198 and European Patent 0,789,278.
- those photoresist compositions encounter a new problem that the resist patterns formed have cracks in them; besides, they are insufficient in the adhesiveness to a substrate and cannot ensure a satisfactory profile in the resist pattern.
- an object of the present invention is to solve the problems of the above-described conventional photoresist compositions usng, as the resin combined with a compound capable of generating an acid upon exposure to light, resins into which alicyclic hydrocarbon moieties are introduced for the purpose of improving dry etching resistance, sensitivity and so on, and thereby to provide a photoresist composition which is suitable for the use of far ultraviolet light, specifically excimer laser beams, particularly an ArF excimer laser beam, as light source, and not only has excellent dry etching resistance and high sensitivity but also forms resist patterns having substantially no cracks therein, sufficiently high adhesiveness to a substrate and excellent profile.
- a positive photoresist composition for exposure to far ultraviolet light which comprises a resin decomposing by the action of an acid to increase its solubility in an alkali and a compound generating an acid by irradiation with an actinic ray or radiation, the resin decomposing by the action of an acid to increase its solubility in an alkali, comprising a polymer that contains as constitutional repeating units both the units represented by the following formulae (I) and (II) and further has groups decomposing by the action of an acid: ##STR1## wherein R 1 and R 2 each independently repersent a hydrogen atom, a cyano group, a hydroxyl group, --COOH, --COOR 5 , --CO--NH--R 6 , --CO--NH---SO 2 --R 6 , a substituted or unsubstituted alkyl, alkoxy or cyclic hydrocarbon group, or a group --Y; R 5 represents a substituted or unsubstituted alkyl or cyclic hydro
- R 13 to R 16 each independently represent a hydrogen atom, a halogen atom, a cyano group, --COOH, --COOR 5 , an acid-decomposable group, --C( ⁇ O)--X--A--R 17 or an unsubstituted or substituted alkyl or cyclic hydrocarbon group, or at least two of the substituents R 13 to R 16 combine with each other to form a ring;
- n is 0 or 1;
- R 5 represents an unsubstituted or substituted alkyl or cyclic hydrocarbon group, or the group --Y as defined in the above embodiment (1);
- X represents an oxygen atom, a sulfur atom, --NH--, --NHSO 2 -- or --NHSO 2 NH---
- the resin decomposing by the action of an acid to increase its solubility in an alkaline developer or the resin comprising a polymer that contains as constitutional repeating units both the units represented by the following formulae (I) and (II) (hereinafter referred to as "the present resin"), is described below.
- R 1 and R 2 each independently represent a hydrogen atom, a cyano group, a hydroxyl group, --COOH, --COOR 5 , --CO--NH--R 6 , --CO--NH--SO 2 --R 6 , a substituted or unsubstituted alkyl, alkoxy or cyclic hydrocarbon group, or the above-described group --Y.
- R 6 represents an unsubstituted or substituted alkyl or cyclic hydrocarbon group.
- R 5 represents a substituted or unsubstituted alkyl or cyclic hydrocarbon group, or the above-described group --Y.
- R 21 to R 28 in the group --Y each independently represent a hydrogen atom, or an unsubstituted or substituted alkyl group.
- a and b are each 1 or 2.
- X represents an oxygen atom, a sulfur atom, --NH--, --NHSO 2 -- or --NHSO 2 NH--.
- A represents a divalent linkage group.
- Suitable examples of an alkyl group represented by R 1 , R 2 , R 5 , R 6 and R 21 --R 28 each include straight-chain and branched alkyl groups containing 1 to 10 carbon atoms, preferably those containing 1 to 6 carbon atoms, and more preferably methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, sec-butyl and t-butyl groups.
- Examples of a cyclic hydrocarbon group represented by R 1 , R 2 , R 5 and R 6 each include a cyclopropyl group, a cyclopentyl group, a cyclohexyl group, an adamantyl group, a 2-methyl-2-adamantyl group, a norbornyl group, a bornyl group, an isobornyl group, a tricyclodecanyl group, a dicyclopentenyl group, a norbornane epoxy group, a menthyl group, an isomenthyl group, a neomenthyl group and a tetracyclododecanyl group.
- Examples of an alkoxy group represented by R 1 and R 2 each include those containing 1 to 4 carbon atoms, such as methoxy, ethoxy, propoxy and butoxy groups.
- a halogen atom includes a chlorine atom, a bromine atom, a fluorine atom and an iodine atom.
- Such an alkoxy group includes those containing 1 to 4 carbon atoms, e.g., a methoxy group, an ethoxy group, a propoxy group and a butoxy group.
- Such an acyl group includes a formyl group and an acetyl group, and such an acyloxy group includes an acetoxy group.
- Examples of a divalent linkage group represented by A in the formula (I) include an alkylene group, a substituted alkylene group, an ether group, a thioether group, a carbonyl group, an ester group, an amido group, a sulfonamido group, an urethane group, an urea group and groups formed by combining two or more of the above-recited ones.
- Examples of an alkylene group or a substituted alkylene group represented by the A include the groups having the following formula;
- R a and R b which may be the same or different, each represent a hydrogen atom, an alkyl group, a substituted alkyl group, a halogen atom, a hydroxyl group or an alkoxy group; and r represents an integer of 1 to 10.
- the alkyl group suitable for R a or R b includes lower alkyl groups, such as methyl, ethyl, propyl, isopropyl and butyl groups.
- the alkyl group is a methyl, ethyl, propyl or isopropyl group.
- Examples of a substituent present in the substituted alkyl group include a hydroxyl group, a halogen atom and an alkoxy group.
- the alkoxy group suitable for R a or R b includes those containing 1 to 4 carbon atoms, such asmethoxy, ethoxy, propoxy and butoxy groups.
- the halogen atom suitable for R a or R b includes chlorine, bromine, fluorine and iodine atoms.
- R 11 , and R 12 each independently represent a hydrogen atom, a cyano group, a halogen atom, or an alkyl group which may have a substituent.
- Z represents atomic groups forming an alicyclic structure, which may have a substituent, together with the two carbon atoms (C--C).
- Examples of a halogen atom suitable for R 11 or R 12 include chlorine, bromine, fluorine and iodine atoms.
- Examples of an alkyl group suitable for R 11 or R 12 include straight-chain and branched alkyl groups containing 1 to 10 carbon atoms, preferably straight-chain and branched alkyl groups containing 1 to 6 carbon atoms, more preferably methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, sec-butyl and t-butyl groups.
- Examples of a substituent the alkyl group as R 11 , or R 12 can further have, include a hydroxyl group, a halogen atom, a carboxyl group, an alkoxy group, an acyl group, a cyano group and an acyloxy group.
- the halogen atom as the substituent includes chlorine, bromine, fluorine and iodine atoms.
- the alkoxy group as the substituent includes those containing 1 to 4 carbon atoms, such as methoxy, ethoxy, propoxy and butoxy groups.
- the acyl group as the substituent includes formyl and acetyl groups.
- the acyloxy group as the substituent includes an acetoxy group.
- the atomic groups for forming an alicyclic structure which are represented by Z, are atomic groups forming an unsubstituted or substituted alicyclic hydrocarbon as a repeating unit.
- the atomic groups for forming an alicyclic structure having a bridged linkage, by which the bridged alicyclic hydrocarbon as a repeating unit is completed, are preferred.
- the skeleton of an alicyclic hydrocarbon formed includes those of the structures shown below: ##STR5##
- the alicyclic hydrocarbon skeletons shown above may have substituents.
- substituents include those represented by R 13 to R 16 in the above formula (II-A) or (II-B).
- repeating units containing the above bridged alicyclic hydrocarbons the repeating units represented by the formula (II-A) or (II-B) are further preferable.
- R 13 to R 16 each independently represent a hydrogen atom, a halogen atom, a cyano group, --COOH, --COOR 5 (wherein R 5 represents an unsubstituted or substituted alkyl or cyclic hydrocarbon group, or the same group --Y as defined in the formula (I)), an acid-decomposable group, --C( ⁇ O)--X--A--R 17 or an unsubstituted or substituted alkyl or cyclic hydrocarbon group.
- n is 0 or 1.
- X represents an oxygen atom, a sulfur atom, --NH--, --NHSO 2 -- or --NHSO 2 NH--.
- R 17 represents --COOH, --COOR 5 , --CN, a hydroxyl group, an unsubstituted or substituted alkoxy group, --CO--NH--R 6 , --CO--NH--SO 2 --R 6 or the same group --Y as defined in the formula (I) (wherein R 5 and R 6 are the same as defined above).
- A represents a single bond or a divalent linkage group.
- the acid-decomposable groups in the resin according to the present invention may be included in the above --C( ⁇ O)--X--A--R 1 and --C( ⁇ O)--X--A--R 2 , or they may be contained as substituents of Z in the formula (II).
- the structure of such an acid-decomposable group is represented by --C( ⁇ O)--X 1 --R 0 .
- R 0 in the above structural formula examples include tertiary alkyl groups such as t-butyl and t-amyl groups, an isobornyl group, 1-alkoxyethyl groups such as 1-ethoxyethyl, 1-butoxyethyl, 1-isobutoxyethyl and 1-cyclohexyloxyethyl groups, alkoxymethyl groups such as methoxymethyl and ethoxymethyl groups, a tetrahydropyranyl group, a tetrahydropyranyl group, a trialkylsilyl ester group, and 3-oxocyclohexyl ester group.
- X 1 has the same as defined in the above X.
- Examples of a halogen atom for each of the substituents R 13 to R 16 include chlorine, bromine, fluorine and iodine atoms.
- Examples of an alkyl group for each of the substituents R 13 to R 16 include straight-chain and branched alkyl groups containing 1 to 10 carbon atoms, preferably straight-chain and branched alkyl groups containing 1 to 6 carbon atoms, more preferably methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, sec-butyl and t-butyl groups.
- Examples of a cyclic hydrocarbon group for each of the foregoing R 13 to R 16 include cyclic alkyl groups and bridged hydrocarbon groups, such as cyclopropyl, cyclopentyl, cyclohexyl, adamantyl, 2-methyl-2-adamantyl, norbornyl, bornyl, isobornyl, tricyclodecanyl, dicyclopentenyl, norbornane epoxy, menthyl, isomenthyl, neomenthyl and tetracyclodecanyl groups.
- cyclic alkyl groups and bridged hydrocarbon groups such as cyclopropyl, cyclopentyl, cyclohexyl, adamantyl, 2-methyl-2-adamantyl, norbornyl, bornyl, isobornyl, tricyclodecanyl, dicyclopentenyl, norbornane epoxy, menthyl, isomenthyl, ne
- Examples of a ring formed by combining at least two of the substituents R 13 to R 16 include rings containing 5 to 12 carbon atoms, such as cyclopentene, cyclohexene, cycloheptane and cyclooctane rings.
- Examples of an alkoxy group for the substituent R 17 include those containing 1 to 4 carbon atoms, such as methoxy, ethoxy, propoxy and butoxy groups.
- Examples of further substituent in the above alkyl, cyclic hydrocarbon and alkoxy groups include a hydroxyl group, a halogen atom, a carboxyl group, an alkoxy group, an acyl group, a cyano group and an acyloxy group.
- ahalogen atom includes chlorine, bromine, fluorine and iodine atoms.
- an alkoxy group includes those containing 1 to 4 carbon atoms, e.g., methoxy, ethoxy, propoxy and butoxy groups.
- Such an acyl group is, e.g., a formyl or acetyl group.
- Such an acyloxy group is, e.g., an acetoxy group.
- Examples of a divalent linkage group as the above A include, similar to the divalent linkage group as the A in the formula (I), a single bond, an alkylene group, a substituted alkylene group, an ether group, a thioether group, a carbonyl group, an ester group, an amido group, a sulfonamido group, an urethane group, an urea group and combinations of two or more of the above-recited groups.
- Examples of an alkylene group or a substituted alkylene group represented by the above A include the groups having the following formula:
- R a and R b which may be the same or different, each represent a hydrogen atom, an alkyl group, a substituted alkyl group, a halogen atom, a hydroxyl group or an alkoxy group; and r represents an integer of 1 to 10.
- the alkyl group suitable for R a or R b includes lower alkyl groups, such as methyl, ethyl, propyl, isopropyl and butyl groups.
- the alkyl group is a methyl, ethyl, propyl or isopropyl group.
- Examples of a substituent present in the substituted alkyl group include a hydroxyl group, a halogen atom and an alkoxy group.
- the alkoxy group suitable for R a or R b includes those containing 1 to 4 carbon atoms, such as methoxy, ethoxy, propoxy and butoxy groups.
- the halogen atom suitable for R a or R b includes chlorine, bromine, fluorine and iodine atoms.
- the acid-decomposable group may be present in at least either the repeating unit of formula (I) or (II), or the repeating unit of the copolymerizing component described hereinafter.
- R 13 to R 16 in the formula (II-A) or (II-B) become the atomic groups for forming an alicyclic structure in the formula (II) or the substituents of the atomic group Z for forming a bridged alicyclic structure.
- Examples of a repeating unit represented by the formula (II-A) or (II-B) include the repeating units [II-1] to [II-166] shown below, but it should be understood that these examples are not to be construed as limiting the scope of the invention in any way. ##STR6##
- the resin of the present invention can contain repeating units derived from various monomers for the purposes of controlling dry etching resistance, suitability for standard developers, adhesiveness to a substrate and resist profile, and further meeting general requirements for resist, such as resolution, heat resistance and sensitivity.
- Examples of a copolymerizing component suitable for such purposes include the repeating units represented by the following formulae (IV') and (V'): ##STR7## wherein Z represents an oxygen atom, --NH--, --N(R 3 )-- or --N(--OSO 2 R 3 )--; and R 3 represents the same substituted or unsubstituted alkyl or cyclic hydrocarbon group as recited hereinbefore.
- repeating units represented by the above formulae (IV') and (V') respectively include the repeating units [IV'-9] to [IV'-16] shown below and the repeating units [V'-9] to [V'-16] shown below, which are not to be considered as limiting the scope of this invention.
- the monomers shown below can be introduced as additional repeating units by copolymerization so long as the effects intended by the present invention can be gained, but the monomers usable for the copolymerization should not be construed as being limited to the recited ones.
- the introduction of additional repeating units enables minute control of the properties required for the resins, particularly (1) solubility in a coating solvent, (2) resist film formability (glass transition temperature), (3) alkali developability, (4) reduction in film thickness (hydrophobicity, selection of alkali-soluble groups), (5) adhesiveness to a substrate in the unexposed area and (6) dry etching resistance.
- copolymerizable monomers examples include compounds having one addition polymerizable unsaturated bond, such as acrylates, methacrylates, acrylamides, methacrylamides, allyl compounds, vinyl ethers and vinyl esters.
- the above compounds include:
- acrylates such as alkyl acrylates (preferably those containing a 1-10C alkyl group, e.g., methyl acrylate, ethyl acrylate, propyl acrylate, amyl acrylate, cyclohexyl acrylate, ethylhexyl acrylate, octyl acrylate, t-octyl acrylate, chloroethyl acrylate, 2-hydroxyethyl acrylate, 2,2-dimethylhydroxypropyl acrylate, 5-hydroxypentyl acrylate, trimethylolpropane monoacrylate, pentaerythritol monoacrylate, benzyl acrylate, methoxybenzyl acrylate, furfuryl acrylate, tetrahydrofurfuryl acrylate);
- alkyl acrylates preferably those containing a 1-10C alkyl group, e.g., methyl acrylate, ethyl
- methacrylates such as alkylmethacrylates (preferably those containing an alkyl group having 1-10 carbon atomds), e.g., methyl methacrylate, ethyl methacrylate, propyl methacrylate, isopropyl methacrylate, amyl methacrylate, hexyl methacrylate, cyclohexyl methacrylate, benzyl methacrylate, chlorobenzyl methacrylate, octyl methacrylate, 2-hydroxyethyl methacrylate, 4-hydroxybutyl methacrylate, 5-hydroxypentyl methacrylate, 2,2-dimethyl-3-hydroxypropyl methacrylate, trimethylolpropane monomethacrylate, pentaerythritol monomethacrylate, furfuryl methacrylate, tetrahydrofurfuryl methacrylate);
- alkylmethacrylates preferably those containing an alkyl group having 1
- acrylamides such as acrylamide, N-alkylacrylamides (the alkyl group of which is a 1-10C alkyl group, e.g., methyl, ethyl, propyl, butyl, t-butyl, heptyl, octyl, cyclohexyl, hydroxyethyl), N,N-dialkylacrylamides (the alkyl groups of which are alkyl groups having 1-109 carbon atoms, e.g., methyl, ethyl, butyl, isobutyl, ethylhexyl, cyclohexyl), N-hydroxyethyl-N-methylacrylamide, and N-2-acetamidoethyl-N-acetylacrylamide;
- N-alkylacrylamides the alkyl group of which is a 1-10C alkyl group, e.g., methyl, ethyl, propyl, but
- methacrylamides such as methacrylamide, N-alkylmethacrylamides (the alkyl groups of which are alkyl groups having 1-10 carbon atoms, e.g., methyl, ethyl, t-butyl, ethylhexyl, hydroxyethyl, cyclohexyl), N,N-dialkylmethacrylamides (the alkyl groups of which are, e.g., ethyl, propyl and butyl), and N-hydroxyethyl-N-methylmethacrylamide;
- N-alkylmethacrylamides the alkyl groups of which are alkyl groups having 1-10 carbon atoms, e.g., methyl, ethyl, t-butyl, ethylhexyl, hydroxyethyl, cyclohexyl
- N,N-dialkylmethacrylamides the alkyl groups of which are, e.g
- allyl compounds such as allyl esters (e.g., allyl acetate, allyl caproate, allyl caprate, allyl laurate, allyl palmitate, allyl stearate, allyl benzoate, allyl acetoacetate, allyl lactate) and allyl oxyethanol;
- allyl esters e.g., allyl acetate, allyl caproate, allyl caprate, allyl laurate, allyl palmitate, allyl stearate, allyl benzoate, allyl acetoacetate, allyl lactate
- allyl oxyethanol e.g., allyl esters (e.g., allyl acetate, allyl caproate, allyl caprate, allyl laurate, allyl palmitate, allyl stearate, allyl benzoate, allyl acetoacetate, allyl lactate) and ally
- vinyl ethers such as alkyl vinyl ethers (e.g., hexyl vinyl ether, octyl vinyl ether, decyl vinyl ether, ethylhexyl vinyl ether, methoxyethyl vinyl ether, ethoxyethyl vinyl ether, chloroethyl vinyl ether, 1-methyl-2,2-dimethylpropyl vinyl ether, 2-ethylbutyl vinyl ether, hydroxyethyl vinyl ether, diethylene glycol vinyl ether, dimethylaminoethyl vinyl ether, diethylaminoethyl vinyl ether, butylaminoethyl vinyl ether, benzyl vinyl ether, tetrahydrofurfuryl vinyl ether); vinyl esters, such as vinyl butyrate, vinyl isobutyrate, vinyl trimethylacetate, vinyl diethylacetate, vinyl valerate, vinyl caproate, vinyl chloroacetate, vinyl dichloroacetate, vinyl
- dialkyl itaconates e.g., dimethyl itaconate, diethyl itaconate, dibutyl itaconate
- dialkyl fumarates e.g., dibuty fumarate
- monoalkyl fumarates acrylic acid, methacrylic acid, crotonic acid, itaconic acid, maleic anhydride, maleimide, acrylonitrile, methacrylonitrile and maleylonitrile.
- any of addition polymerizable unsaturated compounds may be used as comonomers so long as they can be copolymerized with the repeating units represented by formula (I) or (II) (including those represented by formulae (II-A) and (II-B)).
- the proportions of repeating units represented by formula (I) and formula (II) can be determined appropriately considering the desired dry etching resistance and sensitivity of the resist obtained, prevention of cracking in resist patterns, adhesiveness to a substrate, resist profile, and further general requirements for resist, such as resolution and heat resistance.
- the suitable proportion of the respective repeating units of formulae (I) and (II) in the total repeating units of the resin is generally 30 to 70 mole %, preferably 35 to 65 mole %, and more preferably 40 to 60 mole %.
- the suitable proportion of the repeating units derived from monomers recited hereinbefore as the desirable copolymerizing component in the resin of the present invention can be determined properly depending on the desired resist properties. In general, it is 99 mole % or less, preferably 90 mole % or less, particularly preferably 80 mole % or less, to the total mole numbers of repeating units of formula (I) and those of formula (II). Also, the suitable proportion of the repeating units derived from monomers recited hereinbefore as the additional copolymerizing component in the resin can be determined properly depending on the desired resist properties.
- the resin of the present invention may contain groups decomposing by the action of an acid in any of the repeating units, including the repeating units represented by formulae (I) and (II) and those derived from monomers as copolymerizing component.
- the suitable proportion of the repeating units having the groups decomposing by the action of an acid in the resin is from 8 to 60 mole %, preferably from 10 to 55 mole %, particularly preferably from 12 to 50 mole %, to the total repeating units of the resin.
- the resin of the present invention can be generally synthesized by copolymerizing a monomer corresponding to the repeating unit of formula (II), maleic anhydride and, if needed, monomers as copolymerizing component in the presence of a polymerization catalyst, subjecting the repeating units from maleic anhydride to ring-opening esterification with alcohols or hydrolysis under a basic or acidic condition, and then converting the thus produced carboxylic acid moieties into desired substituent groups.
- the resin of the present invention has a weight average molecular weight of preferably from 1,000 to 200,000.
- the weight average molecular weight lower than 1,000 is not so favorable for the resin to ensure satisfactory heat resistance and dry etching resistance in the resulting resist. Further, the weight average molecular weight higher than 200,000 is also unfavorable, because the resulting resist has inferior developability and low film formability ascribed to very high viscosity of the resin.
- the resin of the present invention is characterized by comprising one or more kinds of repeating units represented by formula (I) and one or more kinds of repeating units represented by formula (II) to ensure excellent dry etching resistance and high sensitivity in the photoresist composition, and further to inhibit satisfactorily the resist patterns from cracking, provide sufficient adhesiveness to a substrate, ensure excellent profile in the resist patterns and enable the photoresist composition to acquire suitability for exposure to far ultraviolet light sources, such as excimer laser light sources, especially an ArF excimer light source.
- far ultraviolet light sources such as excimer laser light sources, especially an ArF excimer light source.
- the resin of the present invention has particular groups as well as a particular main chain skeleton to get improved adhesiveness to a substrate.
- both main and side chains it does not contain in a substantial sense any groups showing strong absorption in the far ultraviolet region, so that the exposure light can propagate in the coated film to reach the vicinity of the substrate surface; as a result, the resin can ensure high sensitivity and excellent pattern profile and further prevent the generation of cracking in the resist patterns to further improve the pattern profile.
- low transmission density is an essential requirement, it is not directly bound up with excellent resist characteristics, but it is needless to say that other factors affect them.
- the resin satisfies essential requirements for not only the transmission density but also other affecting factors.
- Each of positive photoresist compositions according to the present invention contains mainly the resin as described above and a photoacid generator.
- the proportion of the resin in the photoresist composition is from 40 to 99% by weight, preferably from 50 to 97% by weight, to the total solid content in the resist.
- Photoacid generators usable in the positive photoresist compositions of the present invention are explained below.
- the photoacid generators are required to have two properties, namely (1) being transparent to exposure light (provided that they have no photobleaching properties) and (2) being sufficiently subject to photolysis to secure resist sensitivity.
- examples of a photoacid generator include the 2-oxocyclohexyl group-containing aliphatic alkylsulfonium salts and the N-hydroxysuccinimidosulfonates as disclosed in JP-A-7-25846, JP-A-7-28237, JP-A-7-926757 and JP-A-8-27102. Further, the description of photoacid generators can be found, e.g., in J. Photopolym. Sci. Technol., vol. 7, No. 3, p. 423 (1994), and sulfonium salts represented by the following formula (VI), disulfones represented by the following formula (VII) and compounds represented by the following formula (VIII) are cited as examples: ##STR9##
- R 12 to R 15 are each an alkyl group or a cycloalkyl group, and they may be the same or different.
- N-hydroxymaleinimidosulfonates of the following formula (IX) are also suitable for photoacid generators: ##STR10##
- R 16 and R 17 which may be the same or different, each represent a hydrogen atom, an alkyl group having 1-6 carbon atoms or a cycloalkyl group, or R 16 and R 17 combine with each other via an alkylene group to form a ring; and R 18 represents an alkyl group, a perfluoroalkyl group, a cycloalkyl group or a group derived from a substituted camphor.
- Examples of the alkyl group having 1-6 carbon atoms as R 16 or R 17 in the above formula (IX) include methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, tert-butyl, n-pentylandn-hexyl groups. Of these groups, methyl, ethyl and propyl groups are preferred, and methyl and ethyl groups are more preferred.
- Examples of a cycloalkyl group containing at most 6 carbon atoms include cyclopropyl, cyclopentyl and cyclohexyl groups. Of these groups, cyclopentyl and cyclohexyl groups are preferred. Examples of a case wherein a ring is formed by combining R 16 with R 17 via an alkylene chain include the cases of forming cyclohexyl, norbornyl and tricyclodecanyl groups.
- Examples of an alkyl group as R 18 include straight-chain alkyl groups having 1-20 carbon atoms, including methyl, ethyl and propyl groups, and branched alkyl groups having 3 to 20 carbon atoms, including isopropyl, isobutyl, tert-butyl and neopentyl groups. Of these alkyl groups, straight-chain or branched alkyl groups having 1-16 carbon atoms, especially 4-15 carbon atoms, are preferred.
- Examples of a perfluoroalkyl group as R 18 include straight-chain perfluoroalkyl groups having 1-20 carbon atoms, including trifluoromethyl and pentafluoroethyl groups, and branched perfluoroalkyl groups having 3-20 carbon atoms, including heptafluoroisopropyl and nonafluoro-tert-butyl groups. Of these perfluoroalkyl groups, straight-chain or branched perfluoroalkyl groups having 1-16 carbon atoms are preferred.
- Examples of a cycloalkyl group include monocyclic cycloalkyl groups, such as cyclopentyl and cyclohexyl groups, and polycyclic cycloalkyl groups, such as decalyl, norbornyl and tricyclodecanyl groups.
- the amount of such a photoacid generator added in the positive photoresist composition is from 0.1 to 20% by weight, preferably from 0.5 to 15% by weight, particularly preferably from 1 to 10% by weight, to the total solid content in the composition.
- the following photoacid generators may further be used in combination with the above-recited ones.
- the amount of the other photoacid generator usable in combination with the above-recited ones in the positive resist composition is 2% by weight or less, preferably 1% by weight or less, to the total solid content in the composition.
- Examples of the other photoacid generator include the diazonium salts described, e.g., in S. I. Schlesinger, Photogr. Sci. Eng., 18, 387 (1974), and T. S. Bal et al., Polymer, 21, 423 (1980); onium salts, such as the ammonium salts described, e.g., in U.S. Pat. Nos. 4,069,055, 4,069,056 and Re 27,992, and Japanese Patent Application No. 3-140140, the phosphonium salts described, e.g., in D. C. Necker et al., Macromolecules, 17, 2468 (1984), C. S. Wen et al., Teh. Proc. Conf. Rad.
- the polymers in the main or side chains of which the above-recited groups or compounds that can generate acids upon exposure are introduced, such as the polymers disclosed, e.g., in M. E. Woodhouse et al., J. Am. Chem. Soc., 104, 5586 (1982), S. P. Pappas et al., J. Imaging Sci., 30 (5), 218 (1986), S. Kondo et al., Makromol. Chem., Rapid Commun., 9, 625 (1988), Y. Yamada et al., Makromol. Chem., 152, 153, 163 (1972), J. V. Crivello et al., J.
- PAG1 Trihalomethyl-substituted oxazole compounds represented by the following formula (PAG1), or trihalomethyl-substituted s-triazine compounds represented by the following formula (PAG2): ##STR11## wherein R 201 is a substituted or unsubstituted aryl or alkenyl group; R 202 is a substituted or unsubstituted aryl, alkenyl or al
- Ar 1 and Ar 2 are each a substituted or unsubstituted aryl group.
- Suitable examples of such a substituent include an alkyl group, a haloalkyl group, a cycloalkyl group, an aryl group, an alkoxy group, a nitro group, a carboxyl group, an alkoxycarbonyl group, a hydroxyl group, a mercapto group and a halogen atom.
- R 203 , R 204 and R205 are each a substituted or unsubstituted alkyl or aryl group.
- each of them is an aryl group having 6-14 carbon atoms, an alkyl group having 1-8 carbon atoms or their substituted derivatives.
- a substituent suitable for the aryl group include an alkoxy group having 1-8 carbon atoms, an alkyl group having 1-8 carbon atoms, a nitro group, a carboxyl group, a hydroxyl group and a halogen atom, and those for the alkyl group include an alkoxy group having 1-8 carbon atoms, a carboxyl group and an alkoxycarbonyl group.
- Z - is a counter anion, such as a perfluoroalkanesulfonic acid anion, such as CF 3 SO 3 - , or a pentafluorobenzenesulfonic acid anion.
- R 203 , R 204 and R 205 , and two of Ar 1 and Ar 2 as well, may combine with each other via a single bond or a substituent.
- onium salts of formulae (PAG3) and (PAG4) are known compounds, and can be prepared using the methods described, e.g., in J. W. Knapczyk et al., J. Am. Chem. Soc., 91, 145 (1969), A. L. Maycoket al., J. Org. Chem., 35, 2532 (1970), E. Goethas et al., Bull. Soc. Chem. Belg., 73, 546 (1964), H. M. Leicester, J. Ame. Chem. Soc., 51, 3587 (1929), J. V. Crivello et al., J. Polym. Chem. Ed., 18, 2677 (1980), U.S. Pat. Nos. 2,807,648 and 4,247,473, and JP-A-53-101331.
- PAG5 Disulfone compounds represented by the following formula (PAG5), or iminosulfonate compounds represented by the following formula (PAG6): ##STR15## wherein Ar 3 and Ar 4 are each a substituted or unsubstituted aryl group; R 206 is a substituted or unsubstituted alkyl or aryl group; and A is a substituted or unsubstituted alkylene, alkenylene or arylene group.
- alkali-soluble low molecular weight compounds for the purposes of increasing the solubility of the resist in alkali and controlling the glass transition temperature of the resist to prevent the composition from forming a brittle film and undergoing deterioration in heat resistance.
- alkali-soluble low molecular weight compound include the compounds containing an acid group in a molecule, such as dialkylsulfonamide compounds, dialkylsulfonylimide (--SO 2 --NH--CO--) compounds and dialkyldisulfonylimide (--SO 2 --NH--SO 2 --) compounds.
- the suitable proportion of such an alkali-soluble low molecular weight compound is 40% by weight or less, preferably 30% by weight or less, and more preferably 25% by weight, based on the weight of the binder resin.
- the composition of the present invention be dissolved in a particular solvent.
- any organic solvents may be used so long as they can dissolve all the solid components satisfactorily and the solutions obtained can form uniform films by the conventional coating method, such as a spin coating method.
- Such solvents may be used alone or as a mixture of two or more thereof.
- Suitable examples of such a solvent include n-propyl alcohol, isopropyl alcohol, n-butyl alcohol, t-butyl alcohol, methyl cellosolve acetate, ethyl cellosolve acetate, propylene glycol monoethylether acetate, methyl lactate, ethyl lactate, 2-methoxybutyl acetate, 2-ethoxyethyl acetate, methyl pyruvate, ethyl pyruvate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, N-methyl-2-pyrrolidinone, cyclohexanone, cyclopentanone, cyclohexanol, methyl ethyl ketone, 1,4-dioxane, ethylene glycol monomethyl ether, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether, ethylene glycol monoisopropy
- ком ⁇ онент such as a surfactant, a coloring matter, a stabilizer, a coatability improver and a dye, may further be added, if desired.
- the positive photoresist composition is coated on a substrate to form a thin film. It is desirable that the film coated has a thickness of 0.4-1.5 ⁇ m.
- the means capable of emitting light in the wavelength range of 170-220 nm such as an ArF excimer laser stepper, are preferably used. In particular, an ArF excimer laser stepper is preferred.
- a mixture of equimolar amounts of 8-(t-butoxycarbonyl) tetracyclododeca-3-ene and maleic anhydride was dissolved in THF to prepare a solution having the solid content concentration of 60%.
- This solution was placed in a three-necked flask, and heated up to 60° C. under a stream of nitrogen. After the solution temperature was stabilized, the solution was admixed with 5 mole % of a radical initiator V-65 produced by Wako Pure Chemical Industries, Ltd., and heated for 6 hours as it was. After completion of the heating, the reaction solution was precipitated with a toluene-hexane mixture, and the powdery precipitate was filtered off. The powder thus obtained was reacted with 2-cyanoethanol under a basic condition. After completion of the reaction, distilled water was added to precipitate the reaction product. The white powder precipitated was washed twice with water. Thus, the intended Resin A was obtained.
- Residual t-butyl group and formation of the intended Resin A were confirmed by the NMR spectrum of the white powder obtained.
- the weight average molecular weight of the Resin A obtained was determined to be 10,600 based on the standard polystyrene.
- a mixture of equimolar amounts of 8-(2-hydroxyethyl) tetracyclododeca-3-ene and maleic anhydride was dissolved in THF to prepare a solution having the solid content concentration of 60%.
- This solution was placed in a three-necked flask, and heated up to 60° C. under a stream of nitrogen. After the solution temperature was stabilized, the solution was admixed with 5 mole % of a radical initiator V-65 produced by Wako Pure Chemical Industries, Ltd., and heated for 6 hours as it was. After completion of the heating, the reaction solution was precipitated with a toluene-hexane mixture, and the powdery precipitate was filtered off.
- the powder thus obtained was reacted with t-butanol under a basic condition. After completion of the reaction, 1% aqueous acetic acid was added to precipitate the reaction product. The white powder precipitated was washed twice with water. Thus, the intended Resin B was obtained.
- the weight average molecular weight of the Resin B obtained was determined to be 10,200 based on the standard polystyrene.
- the intended Resin C was obtained in the same manner as in Synthesis Example (2), except that 8-(methylsulfonylaminocarbonyl) tetracyclododeca-3-ene was used in place of 8-(2-hydroxyethyl) tetracyclododeca-3-ene.
- the weight average molecular weight of the Resin C obtained was determined to be 9,700 based on the standard polystyrene.
- a mixture of equimolar amounts of pantoyl lactone ester of 8-carboxytetracyclododeca-3-ene and maleic anhydride was dissolved in THF to prepare a solution having the solid content concentration of 60%.
- This solution was placed in a three-necked flask, and heated up to 60° C. under a stream of nitrogen. After the solutiontemperature was stabilized, the solution was admixed with 5 mole % of a radical initiator V-65 produced by Wako Pure Chemical Industries, Ltd., and heated for 6 hours as it was. After completion of the heating, the reaction solution was precipitated with distilled water, and the powdery precipitate was filtered off.
- the powder thus obtained was reacted with t-butanol under a basic condition. After completion of the reaction, 1% aqueous acetic acid was added to precipitate the reaction product. The white powder precipitated was washed twice with water. The powder obtained was reacted with thionyl chloride, and then with ⁇ -alanine. Thus, the intended Resin D was obtained.
- the weight average molecular weight of the Resin D obtained was determined to be 10,900 based on the standard polystyrene.
- a mixture of equimolar amounts of 8-cyanotetracyclododeca-3-ene and maleic anhydride was dissolved in THF to prepare a solution having the solid content concentration of 60%.
- This solution was placed in a three-necked flask, and heated up to 60° C. under a stream of nitrogen. After the solution temperature was stabilized, the solution was admixed with 5 mole % of a radical initiator V-65 produced by Wako Pure Chemical Industries, Ltd., and heated for 6 hours as it was. After completion of the heating, the reaction solution was precipitated with a toluene-hexane mixture, and the powdery precipitate was filtered off.
- the powder thus obtained was reacted with t-butanol under a basic condition. After completion of the reaction, 1% aqueous acetic acid was added to precipitate the reaction product. The white powder precipitated was washed twice with water. Then, the precipitate obtained was reacted with thionyl chloride. After removal of excess thionyl chloride, the reaction product was further reacted with pantoyl lactone under a basic condition. Thus, the intended Resin E was obtained.
- the weight average molecular weight of the Resin E obtained was determined to be 11,100 based on the standard polystyrene.
- a mixture of equimolar amounts of dicyclopentadiene and maleic anhydride was dissolved in THF to prepare a solution having the solid content concentration of 60%.
- This solution was placed in a three-necked flask, and heated up to 60° C. under a stream of nitrogen. After the solution temperature was stabilized, the solution was admixed with 5 mole % of a radical initiator V-65 produced by Wako Pure Chemical Industries, Ltd., and heated for 6 hours as it was. After completion of the heating, the reaction solution was precipitated with hexane, and the powdery precipitate was filtered off. The powder thus obtained was reacted with t-butanol under a basic condition.
- a mixture of equimolar amounts of 8-(t-butoxycarbonyl) tetracyclododeca-3-ene and maleic anhydride was dissolved in THF to prepare a solution having the solid content concentration of 60%.
- This solution was placed in a three-necked flask, and heated up to 60° C. under a stream of nitrogen. After the solution temperature was stabilized, the solution was admixed with 5 mole % of a radical initiator V-65 produced by Wako Pure Chemical Industries, Ltd., and heated for 6 hours as it was. After completion of the heating, the reaction solution was precipitated with a toluene-hexane mixture, and the powdery precipitate was filtered off. The powder thus obtained was reacted with pantoyl lactone under a basic condition. After completion of the reaction, distilled water was added to precipitate the reaction product. The white powder precipitated was washed twice with water. Thus, the intended Resin G was obtained.
- Residual t-butyl group and formation of the intended Resin G were confirmed by the NMR spectrum of the white powder obtained.
- the weight average molecular weight of the Resin G obtained was determined to be 11,100 based on the standard polystyrene.
- a mixture of equimolar amounts of 8-(t-butoxycarbonyl) tetracyclododeca-3-ene and maleic anhydride was dissolved in THF to prepare a solution having the solid content concentration of 60%.
- This solution was placed in a three-necked flask, and heated up to 60° C. under a stream of nitrogen. After the solution temperature was stabilized, the solution was admixed with 5 mole % of a radical initiator V-65 produced by Wako Pure Chemical Industries, Ltd., and heated for 6 hours as it was. After completion of the heating, the reaction solution was precipitated with a toluene-hexane mixture, and the powdery precipitate was filtered off.
- the weight average molecular weight of the Resin H obtained was determined to be 12,500 based on the standard polystyrene.
- a copolymer of norbornene, maleic anhydride, t-butyl acrylate and acrylic acid was produced according to Example 7 in paragraph [0066] of JP-A-10-10739.
- Each of the resist composition solutions was coated in the thickness of 0.5 ⁇ m on a 4-inch bare Si substrate by means of a spin coater, and dried at 130° C. for 90 seconds.
- Each coating thus formed was subjected to 50 shots of exposure via a large rectangular pattern having the size of 1 mm ⁇ 3 mm as the exposure amount was changed by 2 mJ/cm 2 from 2 mJ/cm 2 to 100 mJ/cm 2 with a stepper NSR-1505EX [ArF excimer laser (193 nm)], and then heated at 130° C. for 90 seconds. Thereafter, it was developed with a 2.38% aqueous solution of tetramethylammonium hydroxide (TMAH).
- TMAH tetramethylammonium hydroxide
- Positive photoresist composition solutions were prepared using the Resins A to H synthesized in the above Synthesis Examples, respectively, in the same manner as in Example 1.
- Each of the solution samples thus prepared was coated on a silicon wafer with a spin coater, and dried at 120° C. for 90 seconds to form a positive photoresist film having a thickness of about 0.5 ⁇ m.
- Each of the photoresist films formed was subjected to exposure with an ArF excimer laser (193 nm), heated at 130° C. for 90 seconds, developed with a 2.38% aqueous solution of tetramethylammonium hydroxide, and then rinsed with distilled water to obtain resist pattern profiles.
- the finest line pattern among line patterns remaining on the silicon wafer was found out.
- the adhesiveness of each resist sample to a substrate was evaluated by the width of the residual finest line. This is because a resist film having higher adhesiveness can retain the finer line pattern on the substrate. In other words, if a resist film has inferior adhesiveness, it is harder for the finer line pattern to adhere firmly to the substrate surface, so that the finer line pattern is more liable to come off.
- the resist compositions of the present invention enable very fine line pattern to remain on the substrate. In other words, their adhesiveness proves to be excellent.
- Positive photoresist composition solutions were prepared using the Resins A to H synthesized in the Synthesis Examples, espectively, in the same manner as in Example 2, and resist pattern profiles were formed therefrom, respectively.
- the resist pattern profiles obtained were observed under a scanning electron microscope. All the profiles obtained using the compositions of the present invention (Sample Nos. 1-8) were rectangular and had good shape.
- Photoresist compositions according to the present invention can be suitably used for photolithography using far ultraviolet light sources, such as excimer laser beam sources, especially an ArF excimer laser beam source, and not only have excellent dry etching resistance and high sensitivity but also form resist patterns which are fully inhibited from generating cracks and have sufficiently high adhesiveness to a substrate and excellent profile.
- far ultraviolet light sources such as excimer laser beam sources, especially an ArF excimer laser beam source
Abstract
Description
--[C (R.sub.a) (R.sub.b)].sub.r --
-[C(R.sub.a)(R.sub.b)].sub.r --
TABLE 1 ______________________________________ Sample Kind of Number of No. Resin Cracks ______________________________________ Example 1 1 A None 2 B None 3 C None 4 D None 5 E None 6 F None 7 G None 8 H None Comparative X 20 Example 1 ______________________________________
TABLE 2 ______________________________________ Width of Kind Residual Sample of Finest Line No. Resin (μm) ______________________________________ 1 A 0.20 2 B 0.22 3 C 0.22 4 D 0.22 5 E 0.20 6 F 0.20 7 G 0.20 8 H 0.20 ______________________________________
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JP13691898A JP3847454B2 (en) | 1998-03-20 | 1998-05-19 | Positive type photoresist composition for deep ultraviolet exposure and pattern forming method |
JP10-136918 | 1998-05-19 |
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Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6291131B1 (en) * | 1998-08-26 | 2001-09-18 | Hyundai Electronics Industries Co., Ltd. | Monomers for photoresist, polymers thereof, and photoresist compositions using the same |
US6303265B1 (en) * | 1998-07-02 | 2001-10-16 | Fuji Photo Film Co., Ltd. | Positive photoresist composition for exposure to far ultraviolet light |
US6368771B1 (en) * | 1999-07-30 | 2002-04-09 | Hyundai Electronics Industries Co., Ltd. | Photoresist polymers and photoresist compositions containing the same |
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US6503687B2 (en) * | 1999-12-08 | 2003-01-07 | Samsung Electronics Co., Ltd. | Alicyclic photosensitive polymer, resist composition containing the same and method of preparing the resist composition |
US6506535B1 (en) * | 1999-10-28 | 2003-01-14 | Fuji Photo Film Co., Ltd. | Positive working photoresist composition |
US6528229B2 (en) * | 2000-02-23 | 2003-03-04 | Fuji Photo Film Co., Ltd. | Positive photoresist composition |
US20030152864A1 (en) * | 2000-04-04 | 2003-08-14 | Daikin Industries, Ltd. | Novel fluorine-containing polymer having acid-reactive group and chemically amplifying type photoresist composition prepared from same |
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US6774258B2 (en) * | 2000-12-13 | 2004-08-10 | Shin-Etsu Chemical Co., Ltd. | Tertiary alcohol compounds having alicyclic structure |
US6787283B1 (en) * | 1999-07-22 | 2004-09-07 | Fuji Photo Film Co., Ltd. | Positive photoresist composition for far ultraviolet exposure |
US20040265738A1 (en) * | 1999-05-04 | 2004-12-30 | Feiring Andrew Edward | Fluorinated polymers, photoresists and processes for microlithography |
US20140205948A1 (en) * | 2011-07-14 | 2014-07-24 | Sumitomo Bakelite Co., Ltd. | Self-imageable layer forming polymer and compositions thereof |
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JP3955419B2 (en) * | 1999-10-20 | 2007-08-08 | 富士フイルム株式会社 | Positive photoresist composition for deep ultraviolet exposure |
JP4529245B2 (en) * | 1999-12-03 | 2010-08-25 | 住友化学株式会社 | Chemically amplified positive resist composition |
JP4166402B2 (en) * | 2000-02-28 | 2008-10-15 | 富士フイルム株式会社 | Positive photoresist composition for deep ultraviolet exposure |
JP4255100B2 (en) * | 2001-04-06 | 2009-04-15 | 富士フイルム株式会社 | ArF excimer laser exposure positive photoresist composition and pattern forming method using the same |
JP5117484B2 (en) * | 2009-12-28 | 2013-01-16 | 東京応化工業株式会社 | NOVEL COMPOUND AND PROCESS FOR PRODUCING THE SAME |
JP6414237B2 (en) * | 2017-01-12 | 2018-10-31 | 住友ベークライト株式会社 | Polymer, polymer production method, photosensitive resin composition, and electronic device |
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JPH08202039A (en) * | 1995-01-30 | 1996-08-09 | Japan Synthetic Rubber Co Ltd | Radiation sensitive resin composition |
KR100253575B1 (en) * | 1996-06-24 | 2000-04-15 | 김영환 | Photoresist |
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US6013416A (en) * | 1995-06-28 | 2000-01-11 | Fujitsu Limited | Chemically amplified resist compositions and process for the formation of resist patterns |
EP0789278A2 (en) * | 1996-02-09 | 1997-08-13 | Japan Synthetic Rubber Co., Ltd. | Radiation-sensitive resin composition |
EP0878738A2 (en) * | 1997-05-12 | 1998-11-18 | Fuji Photo Film Co., Ltd. | Positive resist composition |
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US6444396B1 (en) * | 1998-05-11 | 2002-09-03 | Shin-Etsu Chemical Co. | Ester compounds, polymers, resist composition and patterning process |
US6303265B1 (en) * | 1998-07-02 | 2001-10-16 | Fuji Photo Film Co., Ltd. | Positive photoresist composition for exposure to far ultraviolet light |
US6291131B1 (en) * | 1998-08-26 | 2001-09-18 | Hyundai Electronics Industries Co., Ltd. | Monomers for photoresist, polymers thereof, and photoresist compositions using the same |
US7217495B2 (en) * | 1999-05-04 | 2007-05-15 | E I. Du Pont De Nemours And Company | Fluorinated polymers, photoresists and processes for microlithography |
US20040265738A1 (en) * | 1999-05-04 | 2004-12-30 | Feiring Andrew Edward | Fluorinated polymers, photoresists and processes for microlithography |
US6787283B1 (en) * | 1999-07-22 | 2004-09-07 | Fuji Photo Film Co., Ltd. | Positive photoresist composition for far ultraviolet exposure |
US6368771B1 (en) * | 1999-07-30 | 2002-04-09 | Hyundai Electronics Industries Co., Ltd. | Photoresist polymers and photoresist compositions containing the same |
US6506535B1 (en) * | 1999-10-28 | 2003-01-14 | Fuji Photo Film Co., Ltd. | Positive working photoresist composition |
US6455226B1 (en) * | 1999-11-03 | 2002-09-24 | Hyundai Electronics Industries Co., Ltd. | Photoresist polymers and photoresist composition containing the same |
US6503687B2 (en) * | 1999-12-08 | 2003-01-07 | Samsung Electronics Co., Ltd. | Alicyclic photosensitive polymer, resist composition containing the same and method of preparing the resist composition |
US6528229B2 (en) * | 2000-02-23 | 2003-03-04 | Fuji Photo Film Co., Ltd. | Positive photoresist composition |
US6908724B2 (en) * | 2000-04-04 | 2005-06-21 | Daikin Industries, Ltd. | Fluorine-containing polymer having acid-reactive group and chemically amplifying type photoresist composition prepared from same |
US20030152864A1 (en) * | 2000-04-04 | 2003-08-14 | Daikin Industries, Ltd. | Novel fluorine-containing polymer having acid-reactive group and chemically amplifying type photoresist composition prepared from same |
US20050287471A1 (en) * | 2000-04-04 | 2005-12-29 | Daikin Industries, Ltd. | Novel fluorine-containing polymer having acid-reactive group and chemically amplifying type photoresist composition prepared from same |
US6770415B2 (en) * | 2000-06-21 | 2004-08-03 | Hynix Semiconductor Inc. | Photoresist polymer for top-surface imaging process by silylation and photoresist composition containing the same |
US6774258B2 (en) * | 2000-12-13 | 2004-08-10 | Shin-Etsu Chemical Co., Ltd. | Tertiary alcohol compounds having alicyclic structure |
US6762268B2 (en) * | 2001-04-21 | 2004-07-13 | Samsung Electronics Co., Ltd. | Acetal group containing norbornene copolymer for photoresist, method for producing the same and photoresist composition containing the same |
US6737215B2 (en) | 2001-05-11 | 2004-05-18 | Clariant Finance (Bvi) Ltd | Photoresist composition for deep ultraviolet lithography |
WO2002093263A1 (en) * | 2001-05-11 | 2002-11-21 | Clariant International Ltd | Photoresist composition for deep ultraviolet lithography |
CN100335972C (en) * | 2001-05-11 | 2007-09-05 | Az电子材料日本株式会社 | Photoresist composition for deep ultraviolet lithography |
WO2003075746A2 (en) | 2002-03-06 | 2003-09-18 | Boston Scientific Limited | Methods for aneurysm repair |
US6756180B2 (en) | 2002-10-22 | 2004-06-29 | International Business Machines Corporation | Cyclic olefin-based resist compositions having improved image stability |
US20140205948A1 (en) * | 2011-07-14 | 2014-07-24 | Sumitomo Bakelite Co., Ltd. | Self-imageable layer forming polymer and compositions thereof |
US9366956B2 (en) * | 2011-07-14 | 2016-06-14 | Promerus, Llc | Self-imageable layer forming polymer and compositions thereof |
Also Published As
Publication number | Publication date |
---|---|
JP3847454B2 (en) | 2006-11-22 |
JPH11327147A (en) | 1999-11-26 |
KR100558190B1 (en) | 2006-03-10 |
KR19990078077A (en) | 1999-10-25 |
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