US6246086B1 - Structure of capacitor for dynamic random access memory and method of manufacturing thereof - Google Patents

Structure of capacitor for dynamic random access memory and method of manufacturing thereof Download PDF

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US6246086B1
US6246086B1 US09/138,624 US13862498A US6246086B1 US 6246086 B1 US6246086 B1 US 6246086B1 US 13862498 A US13862498 A US 13862498A US 6246086 B1 US6246086 B1 US 6246086B1
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capacitor
film
lower electrode
pillar
base
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US09/138,624
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Michitaka Kubota
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/014—Capacitor

Definitions

  • This invention relates to a capacitor wherein a lower electrode made of conductive film opposes an upper electrode through a capacitive insulating film and is applied to a large capacity DRAM (Dynamic RAM).
  • DRAM Dynamic RAM
  • a capacitor composing a memory cell must possess an electric storage capacity larger than a predetermined level in order to assure a predetermined or higher read-out voltage and refresh interval and prevent a soft error even if the memory cell area is reduced because of miniaturization and increased capacity.
  • the SiO film as the capacitive insulating film was thinned and if thinning of the SiO 2 film reached its limit, an ONO film having a higher dielectric constant than the SiO 2 film was utilized as the capacitive insulating film. Further, application of such high dielectric constant insulating films as a Ta 2 O 5 film, a BST film, an STO film or the like are considered.
  • L 1 L ⁇ 2 d
  • W 1 W ⁇ 2 d
  • H 1 H ⁇ d.
  • the surface area S of the lower electrode in the first conventional example is;
  • the surface area S of the lower electrode in the second conventional example is;
  • the electric storage capacity is difficult to increase and in the DRAM using the first conventional example, it is difficult to improve the reliability and reduce production cost.
  • a capacitor wherein a lower electrode made of conductive film opposes an upper electrode through a capacitive insulating film characterized in that a pillar shaped second conductive film is disposed coaxially in a cylindrical first conductive film.
  • a capacitor characterized in that the capacitor is a component of a memory cell and the lower electrode is a storage node electrode of the memory cell.
  • its second conductive film is not a cylinder but pillar
  • a second pillar shaped conductive film can be disposed within the first cylindrical conductive film.
  • opposing area of the lower electrode and upper electrode is larger as compared to the structure in which the lower electrode is of single cylinder type.
  • the electric storage capacity can be increased and if the electric storage capacity is the same, the capacitor can be miniaturized.
  • FIG. 1 is a perspective view of a lower electrode in a capacitor according to a first conventional example.
  • FIGS. 2 a and 2 b are respectively a perspective view and a side view of the capacitor of a second conventional example.
  • FIGS. 3 a and 3 b are respectively a schematic plan view and a schematic side view of the lower electrode of the capacitor according to an embodiment of the present invention.
  • FIG. 4 is a side sectional view of the capacitor according to the embodiment of the present invention.
  • FIGS. 5 a, 5 b and 5 c are side sectional views sequentially indicating initial processes of manufacturing method according to the embodiment of the present invention.
  • FIGS. 6 a, 6 b and 6 c are side sectional views sequentially indicating intermediate processes of the manufacturing method according to the embodiment of the present invention.
  • FIGS. 7 a, 7 b and 7 c are side sectional views sequentially indicating final processes of the manufacturing method according to the embodiment of the present invention.
  • FIG. 4 shows a capacitor according to the present embodiment and FIGS. 3 a and 3 b show schematically a lower electrode of this capacitor.
  • the lower electrode of the capacitor according to the present embodiment comprises a cylindrical conductive film and a pillar shaped conductive film disposed coaxially in the cylindrical conductive film.
  • each part of the lower electrode of the present embodiment shown in FIGS. 3 a and 3 b is as follows.
  • the surface area S of the lower electrode of the present embodiment is:
  • FIGS. 5 a to 7 c show a manufacturing method of the present embodiment.
  • the transistor and the like are covered with interlayer insulating film such as an SiO 2 film 11 and a contact hole 12 which reaches one source/drain of the transistor is opened in the SiO 2 film 11 .
  • the contact hole 12 is filled with a polycrystalline Si plug 13 containing phosphorus or the like and then an SiN film 14 having a thickness of 50 nm and an Sio 2 film 15 are deposited successively on entire surface by the CVD method or the like.
  • the surface of the SiO 2 film 15 is planarized by chemical mechanical polishing, etchback or the like.
  • the SiO 2 film 15 is deposited so that a thickness of about 500 nm is left after the planarization.
  • a resist 16 is coated on the SiO 2 film 15 and an opening 16 a of pattern of an area in which the lower electrode of the capacitor composing the memory cell or a storage node electrode is to be formed is formed in the resist 16 by lithography. Then, an opening 17 is formed in the SiO 2 film 15 and the SiN film 14 by RIE or the like using the resist 16 as a mask.
  • the resist 16 is removed by ashing or the like.
  • native oxide (not shown) on the polycrystalline Si plug 13 is etched by dilute hydrofluoric acid or the like.
  • a polycrystalline Si film 18 containing phosphorus or the like is deposited on entire surface by the CVD method. As a result, a concave portion 18 a corresponding to the opening 17 is formed in the polycrystalline Si film 18 .
  • an SiO 2 film 21 is deposited on entire surface by the CVD method and a side wall made of the SiO 2 film 21 is formed on an inner side surface of the concave portion 18 a by etching back the SiO 2 film 21 by RIE.
  • a polycrystalline Si film 22 containing phosphorus or the like is deposited on entire surface by the CVD method. At this time, because a space surrounded by the SiO 2 film 21 is small, the space inside of the SiO 2 film 21 is filled with the polycrystalline Si film 22 .
  • an Sio 2 film 23 is deposited on entire surface by the CVD method or the like. Then, as shown in FIG. 7 a, by chemical mechanical polishing, the surfaces of the polycrystalline Si films 18 and 22 and the SiO 2 films 15 and 21 are planarized and the polycrystalline Si film 18 placed along the inner side surface of the opening 17 and the polycrystalline Si film 22 are separated by the SiO 2 film 21 .
  • the SiO 2 films 15 and 21 are etched with dilute hydrofluoric acid and then the lower electrode constituted of the coaxial polycrystalline Si films 18 and 22 is formed.
  • the SiO 2 film 11 is not etched by dilute hydrofluoric acid because the SiN film 14 acts as a stopper.
  • a Ta 2 O 5 film 24 is formed as a dielectric film. Or it is permissible to form an ONO film, a BST film, an STO film or the like instead of the Ta 2 O 5 film 24 .
  • an annealing is carried out before and after forming the dielectric film.
  • the Ta 2 O 5 film 24 is a dielectric film
  • a rapid thermal nitrization is carried out to prevent the polycrystalline Si films 18 and 22 from being oxidized by oxygen in the Ta 2 O 5 film 24 so as to form thin SiN film (not shown) on the surface of the polycrystalline Si films 18 and 22 .
  • an annealing is conducted in oxygen after the Ta 2 O 5 film 24 is formed.
  • the polycrystalline Si film 25 containing phosphorus or the like is deposited on entire surface by the CVD method so as to form an upper electrode called a plate electrode, which is an electrode opposing the storage node electrode.
  • a plate electrode which is an electrode opposing the storage node electrode.
  • an interlayer insulating film, a metallic wiring, a passivation film and the like are formed to complete this DRAM.
  • the surface area of the lower electrode is larger than that of the first conventional example shown in FIG. 1 so that its electric storage capacity is larger.
  • the plane area of the capacitor can be reduced so that consequently the memory cell area can be reduced thereby decreasing the manufacturizing cost of the DRAM.
  • the polycrystalline Si film 18 and the crystalline Si film 22 which constitute the lower electrode of the capacitor are a square cylinder and a substantially square pillar respectively, these may be formed in other shape such as a circular cylinder, a circular pillar or the like.
  • the opening of the mask for forming the opening 16 a in the resist 16 by lithography is square, a corner portion of the opening 16 a is rounded by proximity effect or the like at the time of lithography, thus actually the polycrystalline Si film 18 becomes a circular cylinder, an oval cylinder or the like and the crystalline Si film 22 becomes a circular pillar, an oval pillar or the like.
  • the surface area of the lower electrode is not so different, the previously mentioned formula for the surface area S is valid.
  • the capacitor of the present invention can be applied to a semiconductor device other than the DRAM.

Abstract

A lower electrode of a capacitor is formed by a cylindrical conductive film and a pillar shaped conductive film disposed coaxially within the cylindrical conductive film. Consequently, in this capacitor, even if a plane area of the lower electrode is so small that double cylinder type cannot be realized, opposing area of the lower electrode and upper electrode is larger as compared to a structure in which the lower electrode is of single cylinder type. This invention proposes such a capacitor and a method of manufacturing thereof. As a result, it is possible to increase electric storage capacity if the plane area of the capacitor is the same and further miniaturize the capacitor if the electric storage capacity is the same.

Description

CROSS-REFERENCE TO RELATED APPLICATION
This Application is a Divisional of prior application Ser. No. 08/883,362, filed Jun. 26, 1997 now U.S. Pat. No. 5,869,382.
BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention relates to a capacitor wherein a lower electrode made of conductive film opposes an upper electrode through a capacitive insulating film and is applied to a large capacity DRAM (Dynamic RAM).
2. Description of the Related Art
In the DRAM, a capacitor composing a memory cell must possess an electric storage capacity larger than a predetermined level in order to assure a predetermined or higher read-out voltage and refresh interval and prevent a soft error even if the memory cell area is reduced because of miniaturization and increased capacity.
Conventionally, to increase the electric storage capacity without increasing the area of the capacitor, the SiO film as the capacitive insulating film was thinned and if thinning of the SiO2 film reached its limit, an ONO film having a higher dielectric constant than the SiO2 film was utilized as the capacitive insulating film. Further, application of such high dielectric constant insulating films as a Ta2O5 film, a BST film, an STO film or the like are considered.
As a concrete proposal for increasing the electric storage capacity without increasing a plane area of the capacitor, Mr. Youichi Miyasaka, Basic Research Center, NEC announced “A possibility of BST series thin film for DRAM” at ULSI high dielectric constant thin film technology forum '95 (Feb. 3, 1995, Tokyo Garden Palace).
In the related arts, a first conventional example in which as shown in FIG. 1, the lower electrode was formed in a cylinder shape so that electricity was stored in its external side wall and internal side wall as well and a second conventional example in which as shown in FIGS. 2a and 2 b, the lower electrode was formed in double cylinder shape so as to allow storage of electricity on a wider side wall are considered.
Assume that the external dimensions of the lower electrode in the first conventional example shown in FIG. 1 are L, W, and H and the thickness of the conductive film forming the lower electrode is d, internal dimensions L1, W1, H1 are as follows:
L 1 =L−2d, W 1 =W−2d, H 1 =H−d.
Thus, the surface area S of the lower electrode in the first conventional example is;
S=2H(L+W)+2H 1(L 1 +W 1)+LW
Assuming that the dimensions of respective parts of the lower electrode in the second conventional example shown in FIGS. 2a and 2 b are as shown in Figure, following can be obtained.
L 1 =L−2d, W 1 =W−2d, H 1 =H−d
L 2 =L−4d, W 2 =W−4d, H 2 =H−2d
L 3 =L−6d, W 3 =W−6d
Thus, the surface area S of the lower electrode in the second conventional example is;
 S=2H(L+W)+2H 1(L 1 +W 1)+LW+2H 1(L 2 +W 2)+2H 2(L 2 +W 3)
This is larger than the first conventional example by only last two terms, thus it is more advantageous for increasing the electric storage capacity.
However if the memory cell area is reduced because of miniaturization and increased capacity of the DRAM so that the plane area of the lower electrode of the capacitor is also reduced, in the second conventional example shown in FIGS. 7a and 7 b, a smaller one of L3 and W3 becomes 0. Consequently, a cylinder inside is crushed, so that a double cylinder type cannot be realized. Thus in such a case, conventionally, the first conventional example shown in FIG. 1 was utilized.
OBJECT AND SUMMARY OF THE INVENTION
As evident from the above description, in the first conventional example in which the lower electrode is a single cylinder type, the electric storage capacity is difficult to increase and in the DRAM using the first conventional example, it is difficult to improve the reliability and reduce production cost.
Accordingly, according to claim 1 of the present invention, there is provided a capacitor wherein a lower electrode made of conductive film opposes an upper electrode through a capacitive insulating film characterized in that a pillar shaped second conductive film is disposed coaxially in a cylindrical first conductive film.
According to claim 2 of the present invention, there is provided a capacitor characterized in that the capacitor is a component of a memory cell and the lower electrode is a storage node electrode of the memory cell.
Because in the capacitor of the present invention, its second conductive film is not a cylinder but pillar, even if the plane area of the lower electrode is so small that double cylinders cannot be realized, a second pillar shaped conductive film can be disposed within the first cylindrical conductive film. Thus, even if the plane area of the lower electrode is so small that the double cylinders cannot be realized, opposing area of the lower electrode and upper electrode is larger as compared to the structure in which the lower electrode is of single cylinder type. Thus, if the plane area of the capacitor is the same, the electric storage capacity can be increased and if the electric storage capacity is the same, the capacitor can be miniaturized.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a perspective view of a lower electrode in a capacitor according to a first conventional example.
FIGS. 2a and 2 b are respectively a perspective view and a side view of the capacitor of a second conventional example.
FIGS. 3a and 3 b are respectively a schematic plan view and a schematic side view of the lower electrode of the capacitor according to an embodiment of the present invention.
FIG. 4 is a side sectional view of the capacitor according to the embodiment of the present invention.
FIGS. 5a, 5 b and 5 c are side sectional views sequentially indicating initial processes of manufacturing method according to the embodiment of the present invention.
FIGS. 6a, 6 b and 6 c are side sectional views sequentially indicating intermediate processes of the manufacturing method according to the embodiment of the present invention.
FIGS. 7a, 7 b and 7 c are side sectional views sequentially indicating final processes of the manufacturing method according to the embodiment of the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
An embodiment of the present invention which is applied to DRAM memory cell will be described with reference to the accompanying drawings. FIG. 4 shows a capacitor according to the present embodiment and FIGS. 3a and 3 b show schematically a lower electrode of this capacitor. As evident from FIGS. 3a and 3 b, the lower electrode of the capacitor according to the present embodiment comprises a cylindrical conductive film and a pillar shaped conductive film disposed coaxially in the cylindrical conductive film.
The dimension of each part of the lower electrode of the present embodiment shown in FIGS. 3a and 3 b is as follows.
L 1 =L−2d, W 1 =W−2d, H 1 =H−d
 L 2 =L−4d, W 2 =W−4d
Thus, the surface area S of the lower electrode of the present embodiment is:
S=2H(L+W)+2H 1(L 1 +W 1)+LW+2H 1(L 2 +W 2)
Although this is smaller than the second conventional example shown in FIGS. 2a and 2 b, it is larger than the first conventional example shown in FIG. 1 by only the last term and thus in a fine DRAM in which double cylinders can not be realized, the memory cell capacity can be made larger than the first conventional example.
FIGS. 5a to 7 c show a manufacturing method of the present embodiment. To manufacture the present embodiment, as shown in FIG. 5a, after a transistor (not shown) and the like composing the memory cell are formed, the transistor and the like are covered with interlayer insulating film such as an SiO2 film 11 and a contact hole 12 which reaches one source/drain of the transistor is opened in the SiO2 film 11.
The contact hole 12 is filled with a polycrystalline Si plug 13 containing phosphorus or the like and then an SiN film 14 having a thickness of 50 nm and an Sio2 film 15 are deposited successively on entire surface by the CVD method or the like. The surface of the SiO2 film 15 is planarized by chemical mechanical polishing, etchback or the like. The SiO2 film 15 is deposited so that a thickness of about 500 nm is left after the planarization.
Next, as shown in FIG. 5b, a resist 16 is coated on the SiO2 film 15 and an opening 16 a of pattern of an area in which the lower electrode of the capacitor composing the memory cell or a storage node electrode is to be formed is formed in the resist 16 by lithography. Then, an opening 17 is formed in the SiO2 film 15 and the SiN film 14 by RIE or the like using the resist 16 as a mask.
Next, as shown in FIG. 5c, the resist 16 is removed by ashing or the like. To ensure electric contact with the polycrystalline Si plug 13, native oxide (not shown) on the polycrystalline Si plug 13 is etched by dilute hydrofluoric acid or the like. Next, a polycrystalline Si film 18 containing phosphorus or the like is deposited on entire surface by the CVD method. As a result, a concave portion 18 a corresponding to the opening 17 is formed in the polycrystalline Si film 18.
Next, as shown in FIG. 6a, an SiO2 film 21 is deposited on entire surface by the CVD method and a side wall made of the SiO2 film 21 is formed on an inner side surface of the concave portion 18 a by etching back the SiO2 film 21 by RIE. After that, as shown in FIG. 6b, a polycrystalline Si film 22 containing phosphorus or the like is deposited on entire surface by the CVD method. At this time, because a space surrounded by the SiO2 film 21 is small, the space inside of the SiO2 film 21 is filled with the polycrystalline Si film 22.
Next, as shown in FIG. 6c, an Sio2 film 23 is deposited on entire surface by the CVD method or the like. Then, as shown in FIG. 7a, by chemical mechanical polishing, the surfaces of the polycrystalline Si films 18 and 22 and the SiO2 films 15 and 21 are planarized and the polycrystalline Si film 18 placed along the inner side surface of the opening 17 and the polycrystalline Si film 22 are separated by the SiO2 film 21.
Then, as shown in FIG. 7b, the SiO2 films 15 and 21 are etched with dilute hydrofluoric acid and then the lower electrode constituted of the coaxial polycrystalline Si films 18 and 22 is formed. At this time, the SiO2 film 11 is not etched by dilute hydrofluoric acid because the SiN film 14 acts as a stopper. After that, as shown in FIG. 7c, a Ta2O5 film 24 is formed as a dielectric film. Or it is permissible to form an ONO film, a BST film, an STO film or the like instead of the Ta2O5 film 24.
Usually, an annealing is carried out before and after forming the dielectric film. For example, if the Ta2O5 film 24 is a dielectric film, prior to formation of the Ta2O5 film 24, a rapid thermal nitrization is carried out to prevent the polycrystalline Si films 18 and 22 from being oxidized by oxygen in the Ta2O5 film 24 so as to form thin SiN film (not shown) on the surface of the polycrystalline Si films 18 and 22. Further, to reduce leak in the Ta2O5 film 24 due to loss of oxygen, an annealing is conducted in oxygen after the Ta2O5 film 24 is formed.
As shown in FIG. 4, the polycrystalline Si film 25 containing phosphorus or the like is deposited on entire surface by the CVD method so as to form an upper electrode called a plate electrode, which is an electrode opposing the storage node electrode. After that, although not shown, an interlayer insulating film, a metallic wiring, a passivation film and the like are formed to complete this DRAM.
In the capacitor of the present embodiment manufactured in the above manner, even if miniaturization and large capacity of the DRAM are attained so as to reduce memory cell area and the plane area of the capacitor is reduced to such an extent that the lower electrode of double cylinder type like the second conventional example shown in FIGS. 2a and 2 b cannot be realized, the surface area of the lower electrode is larger than that of the first conventional example shown in FIG. 1 so that its electric storage capacity is larger.
Thus, it is possible to increase the memory cell capacity without increasing a plane area of the capacitor thereby improving the reliability of the DRAM. Further, if it is not necessary to increase the memory cell capacity, the plane area of the capacitor can be reduced so that consequently the memory cell area can be reduced thereby decreasing the manufacturizing cost of the DRAM.
Although in the above embodiment, the polycrystalline Si film 18 and the crystalline Si film 22 which constitute the lower electrode of the capacitor are a square cylinder and a substantially square pillar respectively, these may be formed in other shape such as a circular cylinder, a circular pillar or the like.
Even if the opening of the mask for forming the opening 16 a in the resist 16 by lithography is square, a corner portion of the opening 16 a is rounded by proximity effect or the like at the time of lithography, thus actually the polycrystalline Si film 18 becomes a circular cylinder, an oval cylinder or the like and the crystalline Si film 22 becomes a circular pillar, an oval pillar or the like. However, in this case also, because the surface area of the lower electrode is not so different, the previously mentioned formula for the surface area S is valid.
Although the above-described embodiment is an embodiment in which the capacitor of the present invention is applied to a DRAM memory cell, the capacitor of the present invention can be applied to a semiconductor device other than the DRAM.

Claims (6)

What is claimed is:
1. A capacitor comprising:
a lower electrode defined by a conductive film having (1) a U-shaped cross-sectional configuration in each of two orthogonal directions formed by a base having upper and lower surfaces and a peripheral edge and an upstanding peripheral sidewall extending upwardly and perpendicularly from the base surface along the peripheral edge, the sidewall having a height dimension H, as measured from the bottom surface of the base, and a thickness d, the base also having a thickness d, and (2) an upstanding pillar projecting upwardly from a central portion of the base surface and having a foot portion adjacent the base surface and an upper surface opposite the foot portion, the pillar having a height H which is the same as the height of the upstanding sidewall, and the foot portion having a cross-sectional width dimension which is smaller than a cross-sectional width dimension of the upper surface of said pillar such that said pillar includes tapering side surfaces extending between the upper surface and the foot portion facing the upstanding peripheral sidewall and so that the pillar side surfaces are in spaced apart relation from said sidewalls;
a capacitive insulating film disposed on said lower electrode and covering the upstanding peripheral sidewall, the base upper surface and the tapering side surfaces and upper surface of the pillar;
an upper electrode defined by a conductive film disposed on the capacitive insulating film including a depending sidewall concentrically disposed projecting between the side surfaces of the pillar and the upstanding peripheral sidewall.
2. A capacitor as defined in claim 1, wherein the tapering side surfaces of the pillar are curved surfaces.
3. A capacitor as defined in claim 1, wherein the base and the upstanding peripheral sidewall of the lower electrode comprise a unitary deposited film.
4. A capacitor as defined in claim 1, wherein the lower electrode and the upper electrode comprise a doped polycrystalline Si film.
5. A capacitor as defined in claim 1, wherein the lower electrode and the upper electrode comprise a phosphorus doped polycrystalline Si film.
6. A capacitor as defined in claim 1, wherein said lower electrode comprises a portion of a storage node electrode of a memory cell.
US09/138,624 1996-07-02 1998-08-24 Structure of capacitor for dynamic random access memory and method of manufacturing thereof Expired - Fee Related US6246086B1 (en)

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