US6396024B1 - Permanent magnet ECR plasma source with integrated multipolar magnetic confinement - Google Patents
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- 238000012545 processing Methods 0.000 claims abstract description 20
- 238000000605 extraction Methods 0.000 claims description 18
- 230000005415 magnetization Effects 0.000 claims description 6
- 230000005405 multipole Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 20
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 210000002381 plasma Anatomy 0.000 description 128
- 150000002500 ions Chemical class 0.000 description 28
- 238000009792 diffusion process Methods 0.000 description 15
- 230000000694 effects Effects 0.000 description 13
- 230000005684 electric field Effects 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 239000000523 sample Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 238000005259 measurement Methods 0.000 description 6
- 238000005457 optimization Methods 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000013459 approach Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001810 electrochemical catalytic reforming Methods 0.000 description 1
- 230000008713 feedback mechanism Effects 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
- 230000035899 viability Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32678—Electron cyclotron resonance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
Definitions
- the present invention relates to a method and apparatus for integrating multipolar magnetic confinement with permanent magnet electron cyclotron resonance (ECR) plasma sources to produce highly uniform plasma processing for use in semiconductor fabrication and related fields.
- ECR electron cyclotron resonance
- Plasma producing devices are commonly employed in microelectronic device fabrication and similar industries requiring formation of extremely small geometrics. Plasma producing devices may be utilized in plasma-assisted processing to etch geometries into substrate or to deposit a layer or layers of material on the substrate.
- One class of such plasma producing devices employs a magnetic field in conjunction with microwave energy.
- plasma is produced from a working gas as a result of the interaction of a magnetic field with an electric field.
- a microwave waveguide may be employed to inject microwaves, which have an associated electric field, into an evacuable chamber containing the working gas.
- the microwaves propagate into the chamber in a direction substantially perpendicular to the surface of the workpiece.
- the electric field associated with the microwaves is perpendicular to the direction of the propagation, radially outward from a line 1. following the direction of the propagation of the microwaves. Plasma ions from the working gas are accelerated by the electric field along such radial lines.
- a magnetic field is provided in a direction generally aligned with the direction of microwave propagation, causing plasma electrons within the working gas to rotate around the direction of microwave propagation at right angles with the magnetic field.
- the microwave electric field constantly accelerates the rotating plasmas electrons. The energy of this acceleration dissociates molecules of the working gas into atoms and removes electrons from the atoms, creating ions and additional electrons. The ions then diffuse and impinge upon the exposed surface of the workpiece.
- the requisite magnetic field may be provided by a single permanent magnet situated above the outlet of the microwave waveguide into the chamber.
- An adjusting element may be provided to vary the spatial relationship between the magnet and the waveguide opening, thus altering the location of the plane of resonance or “resonance zone” within the chamber.
- While use of a permanent magnet situated over the waveguide opening to the chamber has advantages over other plasma producing methods, a permanent magnet of the size required to provide the requisite magnetic field may be very expensive. Additionally, plasma uniformity across the surface of the workpiece is generally necessary to achieve etched goemetrics or deposited layers having relatively uniform dimensions from the center to the periphery of the workpiece surface. Prior art attempts to obtain plasma uniformity have focused on achieving a uniform magnetic field, which requires very large and bulky magnets. Another drawback of the use of permanent magnets in plasma producing devices relates to the necessity of positioning the microwave waveguide between the permanent magnet and the workpiece. This constrains placement of the permanent magnet with respect to the chamber, and as the magnet face is moved further from the chamber, larger, more expensive magnets are required to produce the requisite magnetic field.
- the above-identified patent application also discloses the benefits of employing a return piece (also called a “pole piece”) adjacent to the pole of the permanent magnet which is opposite the waveguide and evacuable chamber.
- the return piece which may be composed of soft iron, short circuits the magnetic field emanating from the surface of the permanent magnet adjacent to the return piece, increasing the “effective height” or perceived magnetic strength of the permanent magnet.
- the return piece compensates for magnetic flux which would be generated by a larger magnet, allowing a smaller permanent magnet to produce a magnetic field having the strength equal to that produced by a similar magnet (without the return piece) of a larger height. Since the magnetic materials are typically very expensive, the ability to utilize a smaller permanent magnet to produce the requisite magnetic field at the resonance zone improves the commercial viability of the plasma producing device. Employing a return piece also reduces stray magnetic fields beyond the return piece.
- the return piece described particularly with optional sidewalls extending from the return piece and forming a “sheath” around the permanent magnet, provides some ability to shape and direct the magnetic field produced by the permanent magnet, and to minimize stray magnetic fields around the magnet. Control over both the direction of the magnetic field lines produced by the permanent magnet in the resonance zone and stray magnetic fields may thus be achieved. Additionally, the magnetic field near the workpiece may be minimized, resulting in a inherent increase in plasma uniformity.
- Permanent magnet ECR systems and methods improve upon plasma-processing methods and hardware.
- the ECR systems and methods have been demonstrated to facilitate decreasing the amount of permanent magnet material required. Further, they have successfully demonstrated the creation of more uniform magnetic fields in the resonance zone and the ability to reduce stray fields in the process chamber. Additional information regarding the PlasmaQuest ECR Method can be found in U.S. patent application Ser. No. 09/019,573 titled “Permanent Magnet ECR Plasma Source with Magnetic Field Optimization” filed on Feb. 6, 1998, which is incorporated herein for all purposes.
- Multipolar magnetic confinement involves the use of multiple magnets arranged about the periphery of the evacuable chamber.
- Multipolar magnetic confinement has been used by PlasmaQuest as a means of reducing wall losses in low pressure plasmas and has been implemented on a variety of low pressure plasma systems.
- magnetic confinement In plasma systems which do not require magnetic field for operation, magnetic confinement typically consists of an array of small permanent magnets with opposing polarities arranged around the periphery of the chamber.
- the confinement magnets are in addition to the magnets required for ECR or helicon wave excitation.
- the confinement magnet fields are typically small relative to the ECR or helicon magnetic field.
- the present invention provides a method and apparatus for integrating multipolar magnetic confinement with permanent magnetic electron cyclotron resonance (ECR) plasma sources to produce highly uniform plasma processing is disclosed.
- ECR electron cyclotron resonance
- the plasma processing apparatus includes a vacuum chamber, a workpiece stage within the chamber, a permanent magnet electron cyclotron resonance plasma source directed at said chamber, and a system of permanent magnets for plasma confinement about the periphery of said chamber.
- the permanent magnets for plasma confinement are arranged in a multiplicity of rings with the plane of the rings perpendicular to the vacuum chamber axis and to the direction of propagation of the microwave into the vacuum chamber. The number of rings is chosen with respect to the vacuum chamber dimensions to produce a large, low magnetic field region in the region of the vacuum chamber adjacent to the workpiece stage.
- Multiple magnet configurations are disclosed to provide an optimal confinement magnet design in combination with field effect of the ERC magnet.
- This invention provides for superior uniformity in plasma processing over the prior art.
- the invention also optimizes plasma extraction from the source, maximizes the area of uniform plasma density, and provides for tuning between centrally peaked and centrally hollow plasma profiles.
- FIG. 1 depicts a cross-sectional view of a portion of a plasma-producing device illustrating the PlasmaQuest ECR Method
- FIG. 2 depicts a cross-sectional view of a portion of a plasma-producing device in accordance with a preferred embodiment of the present invention
- FIG. 3 and FIG. 4 are diagrams illustrating null points in resulting field regions for various magnetic band array polarity arrangements of the present invention.
- FIG. 5 depicts a table summarizing the results of confinement magnet configuration modeling.
- FIGS. 6-29 depict graphs of various confinement magnet configuration models.
- FIGS. 30 depicts a table summarizing results from numerous confinement magnet experiments along with ion density results.
- FIGS. 31-70 depict graphs illustrating ion density as a function of probe distance for various microwave powers and chamber pressures.
- FIG. 71 depicts a graph of plasma potential as a function of pressure for 1000W and 2000W microwave power.
- FIG. 72 depicts a graph showing saturation ion current as a function of pressure for both 1000W and 2000W microwave power.
- PlasmaQuest of Dallas, Tex. has developed a permanent magnet electron cyclotron resonance (ECR) plasma source with magnetic field optimization (hereinafter the “PlasmaQuest ECR Method”).
- ECR electron cyclotron resonance
- FIG. 1 a cross-sectional view of a portion of a plasma producing device in accordance with a preferred embodiment of the PlasmaQuest ECR Method is depicted.
- the components depicted in FIG. 1 are not drawn to scale and some elements of the total construction of a plasma-producing device are not depicted. Only so much of the structure as is necessary to understand the PlasmaQuest ECR Method and the present invention are in these figures.
- the plasma-producing device in FIG. 1 includes an evacuable chamber 102 with a waveguide situated adjacent a chamber 102 having an outlet 104 a proximate to a window 106 constructed of material transparent to microwave radiation, such as quartz or aluminum oxide, and located in an opening in the chamber 102 .
- Waveguide 104 is connected at an inlet 104 b to a microwave power generation source and matching network (not shown) and conveys microwave energy produced by the generating source along its length to an outlet 104 a proximately situated to the window 106 .
- the waveguide 104 is preferably a rectangular waveguide, may be constructed from brass or aluminum, and is preferably a half-height or reduced height waveguide in the region where the waveguide 104 intervenes between the evacuable chamber 102 and magnetic field source 108 .
- Waveguides such as waveguide 104 are generally dimensioned according to the frequency of the microwave energy to be transmitted.
- Microwave energy having a frequency of about 2.45 GHz has been found generally suitable for plasma-producing devices.
- a WR284 waveguide with internal dimensions of 2.84 by 1.34 inches and a frequency range including 2.45 GHz, or a WR340 waveguide, which has internal dimensions of 3.40 by 1.70 inches and a frequency range of 2.1 to 3.00 GHz, may be utilized.
- the most important dimension of the waveguide is the horizontal (width) dimension, while the vertical(height) dimension may be reduced with a slight increase in loss but no change in transmission mode.
- the waveguide 104 preferably tapers from a standard sized waveguide at the generating source to a reduced height waveguide having a smaller vertical dimension at a region 104 d where the waveguide 104 begins to intervene between the evacuable chamber 102 and a magnet field source 108 to be placed closer to outlet 104 a while maintaining acceptable power levels and suitable transmission distances.
- Waveguide 104 may also include a rectangular-to-circular transmission mode converter at the elbow 104 c leading to the outlet 104 a , and may be filled with a material such as Teflon®, which has a higher dielectric constant than air and thus permits a smaller waveguide to be employed.
- Teflon® Teflon®
- a support 110 located in the interior of the evacuable chamber 102 holds a workpiece 112 during processing, and may be electrically biased to create an electric field attracting plasma ions form the resonance zone.
- Microwave energy exiting the waveguide 104 at the outlet 104 a passes through the window 106 and propagates, preferably in a circular transmission mode, within the chamber 102 in a direction 114 substantially perpendicular to the exposed processing surface 112 a of the workpiece 112 .
- magnetic field lines 116 of the magnetic field generated by magnetic field source 108 are substantially aligned with the direction 114 of microwave energy propagation. That is, a line connecting the poles of the magnetic field is substantially aligned with, and along the same line as, the direction of propagation of the microwave energy.
- Microwave energy thus propagates from the outlet 104 a of the waveguide 104 in a direction aligned with a predominant axial magnetic field component produced by the magnetic field source 108 , which extends through the waveguide 104 and window 106 into the chamber 102 .
- a resonance zone is thus formed where the electric field associated with the microwave energy is in phase with the electron cyclotron motion of the plasma electrons.
- the magnetic field source 118 in the depicted example is proximate to the waveguide 104 on the opposite side from the outlet 104 a and evacuable chamber 102 .
- the magnetic field source 108 in the embodiment illustrated is a permanent magnet 118 and a pole piece 120 .
- the pole piece 120 includes a base 120 a adjacent the pole of the permanent magnet 118 furthest from the workpiece 112 , sidewalls 120 extending from the periphery of the base 120 a substantially parallel to the magnet 118 , and a recurve sections 120 c extending from the ends of sidewalls 120 b furthest from base 120 a toward the center of the magnetic field source 108 .
- the magnetic field source 108 (and thus the magnetic field lines 116 ), outlet 104 a (and thus the direction 114 of microwave energy propagation), and workpiece support 110 may all be axially aligned as depicted.
- the magnetic field source 108 comprised of a permanent magnet 118 and shaped pole piece 120 constructed as described in further detail in U.S. patent application Ser. No. 09/019,573, are employed to generate a uniform plasma at the surface of the workpiece 112 .
- n c an “overdense” plasma
- the resonance zone critical density is approximately 7 ⁇ 10 10 cm 3 , above which high ion fluxes to workpiece 112 may be achieved.
- electromagnetic (EM) waves including microwaves
- microwaves generally will not propagate through regions of plasma density greater than the critical density. Instead, microwaves are reflected by regions exceeding the critical density and thus will not reach the resonance zone. The consequence is that, once the plasma density reaches the critical density, additional power cannot be added to the plasma and the density cannot be increased above the critical density.
- One exception to this general result is right hand circularly polarized waves, which may propagate through plasma regions exceeding the critical density provided the magnetic field strength is greater than that required for resonance. This is described in many works on plasma physics. In the case of microwave energy at 2.45 GHz as described earlier, this requires a magnetic field strength greater than 875 G.
- a resonance zone with a plasma density greater than the critical density may be formed within the evacuable chamber 102 .
- High field injection is therefore a critical aspect of plasma source and launcher design.
- Plasma uniformity is desirable in most plasma processing systems. There are two general sources of plasma nonuniformity: 1) nonuniformity in the absorption or plasma generating region; and 2) nonuniformity in the transport or movement of the plasma between the generation zone and the workpiece. Uniformity of plasma generation requires that a uniform absorption be achieved, including a uniform microwave field pattern and a uniform magnetic field (resonance zone). Since the absorption and field patterns are interrelated, the ability to manipulate and control the magnetic field configurations (position of the resonance zone and local curvature of the resonance zone shape) on a local scale is critical to achieving a highly uniform absorption. “Local scale” refers to lengths smaller than the characteristics size of the permanent magnet. The magnetic field varies relatively slowly across lengths smaller than the characteristics size.
- a permanent magnet in the form of a cube which is 6 inches on each side, or in the form of a cylinder with a 12 inch diameter bore, will produce magnetic fields which do not change rapidly over dimensions of about 3 inches, with the possible exception of regions adjacent the magnet.
- Plasma uniformity is cross-field diffusion.
- the substantial difference between ion and electron masses means that diffusion parallel to magnetic field lines 116 is led by electrons, which, having higher mobility, tend to leave a region more quickly than ions. However, this results in a positive charge (the ions) remaining in that region, resulting in an electric field which retards diffusion of the electrons.
- the ions are confined to gyrate about magnetic field lines 116 , plasma diffusion perpendicular to magnetic field lines 116 is limited, led by the lower mobility ions.
- the varying mobility of ions and electrons leads to variations in potential, and ultimately difficulties in achieving plasma uniformity.
- Plasma variations in one part of the system may be mapped to other areas down the magnetic field lines due to the slow diffusion across field lines.
- Plasma variations at the workpiece may also arise from spatial variations in the divergence of the magnetic field.
- plasma will travel down the magnetic field lines to the workpiece and the plasma density at any point will be proportional to the field strength at that point.
- the plasma density at a point where the field strength is 875 Gauss would be ⁇ fraction (1/10) ⁇ th that of the resonance zone. If the field strength across the workpiece varies, the plasma density will vary commensurately.
- cross-field diffusion will be enhanced and the effects of magnetic field strength variation will be minimized.
- lower magnetic fields between the plasma generation zone and the workpiece, together with a controlled divergence of the field lines is desirable.
- An additional source of plasma variations arises from changes in the magnetic field magnitude (grad B parallel to B, where B is the magnetic field strength and direction at a given location and grad B is the rate of change of the magnetic field strength at a given location in a given direction).
- Converging field lines may form magnetic mirrors for electrons traveling in the direction of grad B>0, while electrons traveling parallel to grad B>0 may be accelerated.
- These variations in magnetic field magnitude lead to variations in plasma density and potential, and ultimately to variations in plasma processes at the workpiece 112 (e.g., variations in ion density/current and plasma potential/energy).
- One solution is to attempt to achieve uniform transport of the plasma from the resonance zone to the workpiece 112 .
- This is a complicated task since diffusion across the fields depends in part on pressure and plasma parameters, and thus on the process window.
- the required magnetic field is therefore specific to a certain process and set of plasma conditions.
- engineering the magnetic fields typically involves placing a large electromagnetic coil close to the plane of the workpiece 112 and biasing the coil either to focus the magnetic field lines from the ECR absorption region on the workpiece 112 or to form a null field region immediately adjacent to the working surface 112 a of the workpiece 112 .
- the electromagnets required for this solution are extremely bulky, expensive, and difficult to handle.
- a second approach to achieving plasma uniformity is to attempt to achieve a zero field region throughout the evacuable chamber 102 outside the resonance zone. This may involve use of a magnetic bucket to confine the plasma away from the walls of the chamber 102 .
- the magnetic field within the evacuable chamber 102 may not be arbitrarily low since the magnetic field magnitude required for resonance must still be achieved.
- high field injection operation above the critical plasma density
- DECR Distributed Electron Cyclotron Reactor
- MPDR Microwave Plasma Disk Reactor
- a third approach to achieving plasma processing uniformity involves creation of a dense plasma resonance zone 122 (greater than the critical plasma density) followed by diffusion of plasma ions into a low field processing region 124 adjacent to the workpiece 112 .
- High field injection may be achieved by utilizing a diverging magnetic field 116 with microwave energy 114 propagating into a region with a magnetic field having a magnitude in excess of that required for resonance (greater than 875 G for microwave energy at a frequency of 2.45 GHz).
- Electromagnets generally have a circular form with a bore diameter larger (12-14 inches or more) than the diameter of the window 106 (about 6-10 inches in diameter).
- the magnetic fields of such electromagnets fall off as dipole fields in the far field—that is, proportional to 1/z 3 for separations along the z direction (the axis of the electromagnet) greater than the coil diameter.
- the magnetic fields of electromagnets fall off much more slowly in the near field (points along the z direction less than the coil diameter) as a function of: 1 ( z 2 + d 2 ) 3 / 2
- Plasma-producing devices usually operate in the near field.
- Permanent magnet sources provide some advantage in achieving plasma process uniformity by a dense plasma region followed by a low field region.
- the lateral dimension of a permanent magnet is somewhat smaller than the lateral dimension of an electromagnet having corresponding strength (typically about 4-6 inches in diameter), so that the cross-over to the dipole field regime in the far field occurs somewhat closer to the magnet.
- the need to fit a waveguide 104 between the magnetic field source 108 and the resonance zone requires some distance between the permanent magnet and the resonance zone. Coupling of the microwave energy to a region of magnetic field strength of at least that required for resonance therefore may occur in the near field, but not directly at the face.
- the magnetic field should thus fall from fairly high values, approximately 3000-5000 G, to a much smaller field strength at the working surface 112 a of the workpiece 112 .
- the gyro radius of a 3 electron-volts (eV) electron is 1 mm and the magnetic field still has a substantial effect on diffusion of the electron. If the magnetic field strength is lowered to 5 G, the gyro radius increases to 1 cm and the magnetic field has less effect. The larger gyro radius results in better diffusion and better plasma uniformity.
- FIG. 2 illustrates the confinement magnet configuration in relationship to the vacuum chamber and other necessary hardware for one embodiment of the invention.
- the components depicted in FIG. 2 are not drawn to scale and some elements of the total construction of a plasma-producing device are not depicted. Only so much of the structure as is necessary to understand the present invention is depicted in this figure.
- FIG. 2 shows the vacuum chamber 202 , which is evacuated by means of a turbo pump and mechanical pump 228 . Pressure in the chamber is monitored by way of a high vacuum gauge 230 and a process pressure gauge 232 . A gas source, 240 is directed through a flow control 242 and injected into the vacuum chamber 202 through an injection port 244 . A magnetic field source 208 and dielectric window 206 are depicted and correspond with the magnetic source 108 and window 106 shown in FIG. 1 . Also shown in FIG. 2 is a microwave waveguide 246 .
- FIG. 2 shows an array 250 of small permanent magnets 252 - 256 arranged around the periphery of the chamber 202 .
- FIG. 2 is a cross-section schematic representation of a portion of an apparatus having axial symmetry.
- magnets 252 - 256 in the array 250 are actually circular rings.
- Array 250 of magnets 252 - 256 comprises the multipolar magnet confinement aspect of the invention.
- Array 250 illustrated in FIG. 2 is a five-bank array.
- Chuck surface 212 is also shown within the vacuum chamber 202 supported by workpiece stage 210 .
- a magnetic field map has been interposed over the right half of FIG. 2 to illustrate the effect of the particular embodiment shown.
- FIGS. 6-70 depict a table describing the results of various multiple magnet configurations that were modeled, with the plots of the modeled configuration depicted in FIGS. 6-29.
- FIG. 30 depicts a table of confinement magnet experiments along with ion density results with the plots of each experiment illustrated in FIGS. 31-70.
- top magnet band 252 is thought to be important due to electron and consequently ion trajectories out of the plasma source along magnetic field lines.
- the idea is to use the top bank of magnets as an extraction ring by aligning this field with the field of the ECR magnet. This supposition is supported by the fact that an otherwise equivalent configuration gives ion densities 27% higher on average with field 260 of top band 252 aligned rather than anti-aligned with the ECR magnetic field. No change in uniformity was observed due to top band field alignment.
- Field alignment of the magnet pair consisting of the bands above 254 and below 256 the slit valve 248 is of interest because of the effect on magnetic field at the chuck 212 .
- One configuration of interest aligns the magnetic field of these two bands 254 and 256 . This causes a node in the magnetic field in the lane of the chuck 212 . This could be desirable, as a magnetic field free region around the chuck 212 should increase ion diffusion.
- the drawback to this configuration is that it creates a high magnetic field intensity region ( ⁇ 300G) midway between the two magnets 254 and 256 , physically located in the slit valve 248 throat. This field strength is undesirable for many data storage materials.
- the alternate configuration is to anti-align the fields of these two magnet bands 254 and 256 . Probe measurements showed improved uniformity as well as higher ion density of the anti-aligned case.
- Plasma parameters other than just ion density were extracted from the Langmuir probe results.
- the plasma potential as a function of pressure for 1000 W and 2000 W microwave power is depicted in FIG. 71 .
- Plasma potential is an important parameter, as growth of desirable films of some materials such as SiN x requires that the plasma potential fall within a given range or below some maximum value.
- Saturation ion current as a function of pressure for both 1000 W and 2000 W microwave power is depicted in FIG. 72 .
- FIGS. 6-29 The modeling results (illustrated in FIGS. 6-29) supported by subsequent Langmuir probe measurements show that the configuration illustrated in FIG. 2, corresponding to the conf_w_main4modeled configuration in FIGS. 24 and 25, is one preferred embodiment.
- This embodiment is comprised of a top band 252 magnetic field which is aligned with the ECR magnetic field, a band spacing around the chuck 212 of 4 inches, anti-aligned band magnetic fields above 254 and below 256 slit valve 248 , and a five-band array 250 on the chamber.
- variable or graduated magnetic spacing was done to establish field contour trends with respect to variable magnet spacing. This approach can be used to generate a field profile which exhibits a triangular cross-section rather than the more square cross-section generated by uniformly spaced magnets. Models demonstrating this variable magnet spacing are described further in FIGS. 6-29 with a table of summarized results for these models depicted in FIG. 5 .
- One of the broad principals disclosed by this invention which allows the optimization of confinement using the Plasma Quest ECR Method is the use of an extraction ring oriented so that field lines connect the “source magnet” on top ring 252 .
- Ring 252 acts to quickly diverge the magnetic field from the resonance zone and to spread the confined ECR resonance zone plasma to a larger diameter.
- This extraction ring is the first 252 or second 258 ring from the top of FIG. 2 .
- it is the top ring 252 , it is oriented “aligned” to the existing dipole-like field pattern of the “source magnet.” For certain designs it may be preferable to position an additional band near the top of the vacuum chamber 202 so as to provide additional confinement above the plane of the extraction magnet.
- FIG. 3 shows the nulls (x “points”) and resulting “high field” 370 and “low field” 380 regions for an array of alternating polarity rings 350 .
- Field lines 360 are indicated at the top of the figure.
- FIG. 4 shows the null points for an array which is symmetric relative to the dashed horizontal line A—A.
- FIG. 3 illustrates a magnetic field above and below the slit valve in an anti-aligned configuration
- FIG. 4 illustrates an aligned configuration
- the position and alignment of the extraction ring (for example, top band 252 ) is crucial. Higher ion current is produced by an extraction ring with magnetization aligned to the source magnetic field.
- a transition between a centrally hollow and a centrally peaked plasma profile corresponds to the transition between aligned and anti-aligned configurations of the field at chuck 212 .
- This transition between the centrally hollow and the centrally peaked plasma profile also depends on the spacing of the band.
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US (1) | US6396024B1 (en) |
AU (1) | AU2212200A (en) |
WO (1) | WO2000037206A2 (en) |
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US20040072945A1 (en) * | 2002-10-09 | 2004-04-15 | Sternagel Fleischer Godemeyer & Partner | Latex and its preparation |
US20040168771A1 (en) * | 2001-09-14 | 2004-09-02 | Tokyo Electron Limited | Plasma reactor coil magnet |
US20050110291A1 (en) * | 2003-07-11 | 2005-05-26 | Nexx Systems Packaging, Llc | Ultra-thin wafer handling system |
US20080258653A1 (en) * | 2007-04-17 | 2008-10-23 | Advanced Biomarker Technologies, Llc | Cyclotron having permanent magnets |
US20090218520A1 (en) * | 2006-05-26 | 2009-09-03 | Advanced Biomarker Technologies, Llc | Low-Volume Biomarker Generator |
US9272095B2 (en) | 2011-04-01 | 2016-03-01 | Sio2 Medical Products, Inc. | Vessels, contact surfaces, and coating and inspection apparatus and methods |
US9458536B2 (en) | 2009-07-02 | 2016-10-04 | Sio2 Medical Products, Inc. | PECVD coating methods for capped syringes, cartridges and other articles |
US9545360B2 (en) | 2009-05-13 | 2017-01-17 | Sio2 Medical Products, Inc. | Saccharide protective coating for pharmaceutical package |
US9554968B2 (en) | 2013-03-11 | 2017-01-31 | Sio2 Medical Products, Inc. | Trilayer coated pharmaceutical packaging |
US9572526B2 (en) | 2009-05-13 | 2017-02-21 | Sio2 Medical Products, Inc. | Apparatus and method for transporting a vessel to and from a PECVD processing station |
US9662450B2 (en) | 2013-03-01 | 2017-05-30 | Sio2 Medical Products, Inc. | Plasma or CVD pre-treatment for lubricated pharmaceutical package, coating process and apparatus |
US9664626B2 (en) | 2012-11-01 | 2017-05-30 | Sio2 Medical Products, Inc. | Coating inspection method |
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US9863042B2 (en) | 2013-03-15 | 2018-01-09 | Sio2 Medical Products, Inc. | PECVD lubricity vessel coating, coating process and apparatus providing different power levels in two phases |
US9878101B2 (en) | 2010-11-12 | 2018-01-30 | Sio2 Medical Products, Inc. | Cyclic olefin polymer vessels and vessel coating methods |
US9903782B2 (en) | 2012-11-16 | 2018-02-27 | Sio2 Medical Products, Inc. | Method and apparatus for detecting rapid barrier coating integrity characteristics |
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US10189603B2 (en) | 2011-11-11 | 2019-01-29 | Sio2 Medical Products, Inc. | Passivation, pH protective or lubricity coating for pharmaceutical package, coating process and apparatus |
US10201660B2 (en) | 2012-11-30 | 2019-02-12 | Sio2 Medical Products, Inc. | Controlling the uniformity of PECVD deposition on medical syringes, cartridges, and the like |
US11066745B2 (en) | 2014-03-28 | 2021-07-20 | Sio2 Medical Products, Inc. | Antistatic coatings for plastic vessels |
US11077233B2 (en) | 2015-08-18 | 2021-08-03 | Sio2 Medical Products, Inc. | Pharmaceutical and other packaging with low oxygen transmission rate |
US11116695B2 (en) | 2011-11-11 | 2021-09-14 | Sio2 Medical Products, Inc. | Blood sample collection tube |
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Cited By (40)
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US20040168771A1 (en) * | 2001-09-14 | 2004-09-02 | Tokyo Electron Limited | Plasma reactor coil magnet |
US20040072945A1 (en) * | 2002-10-09 | 2004-04-15 | Sternagel Fleischer Godemeyer & Partner | Latex and its preparation |
US20050110291A1 (en) * | 2003-07-11 | 2005-05-26 | Nexx Systems Packaging, Llc | Ultra-thin wafer handling system |
US20090218520A1 (en) * | 2006-05-26 | 2009-09-03 | Advanced Biomarker Technologies, Llc | Low-Volume Biomarker Generator |
US7884340B2 (en) | 2006-05-26 | 2011-02-08 | Advanced Biomarker Technologies, Llc | Low-volume biomarker generator |
US20080258653A1 (en) * | 2007-04-17 | 2008-10-23 | Advanced Biomarker Technologies, Llc | Cyclotron having permanent magnets |
US7466085B2 (en) | 2007-04-17 | 2008-12-16 | Advanced Biomarker Technologies, Llc | Cyclotron having permanent magnets |
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US9545360B2 (en) | 2009-05-13 | 2017-01-17 | Sio2 Medical Products, Inc. | Saccharide protective coating for pharmaceutical package |
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US10189603B2 (en) | 2011-11-11 | 2019-01-29 | Sio2 Medical Products, Inc. | Passivation, pH protective or lubricity coating for pharmaceutical package, coating process and apparatus |
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US9664626B2 (en) | 2012-11-01 | 2017-05-30 | Sio2 Medical Products, Inc. | Coating inspection method |
US9903782B2 (en) | 2012-11-16 | 2018-02-27 | Sio2 Medical Products, Inc. | Method and apparatus for detecting rapid barrier coating integrity characteristics |
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US9662450B2 (en) | 2013-03-01 | 2017-05-30 | Sio2 Medical Products, Inc. | Plasma or CVD pre-treatment for lubricated pharmaceutical package, coating process and apparatus |
US11344473B2 (en) | 2013-03-11 | 2022-05-31 | SiO2Medical Products, Inc. | Coated packaging |
US11298293B2 (en) | 2013-03-11 | 2022-04-12 | Sio2 Medical Products, Inc. | PECVD coated pharmaceutical packaging |
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US10537494B2 (en) | 2013-03-11 | 2020-01-21 | Sio2 Medical Products, Inc. | Trilayer coated blood collection tube with low oxygen transmission rate |
US9554968B2 (en) | 2013-03-11 | 2017-01-31 | Sio2 Medical Products, Inc. | Trilayer coated pharmaceutical packaging |
US11684546B2 (en) | 2013-03-11 | 2023-06-27 | Sio2 Medical Products, Inc. | PECVD coated pharmaceutical packaging |
US10016338B2 (en) | 2013-03-11 | 2018-07-10 | Sio2 Medical Products, Inc. | Trilayer coated pharmaceutical packaging |
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US9863042B2 (en) | 2013-03-15 | 2018-01-09 | Sio2 Medical Products, Inc. | PECVD lubricity vessel coating, coating process and apparatus providing different power levels in two phases |
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Also Published As
Publication number | Publication date |
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WO2000037206A3 (en) | 2000-11-02 |
AU2212200A (en) | 2000-07-12 |
WO2000037206A2 (en) | 2000-06-29 |
WO2000037206A9 (en) | 2001-03-15 |
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