US6563732B2 - Redundancy circuit and method for flash memory devices - Google Patents
Redundancy circuit and method for flash memory devices Download PDFInfo
- Publication number
- US6563732B2 US6563732B2 US09/922,068 US92206801A US6563732B2 US 6563732 B2 US6563732 B2 US 6563732B2 US 92206801 A US92206801 A US 92206801A US 6563732 B2 US6563732 B2 US 6563732B2
- Authority
- US
- United States
- Prior art keywords
- memory cells
- column
- storage elements
- defective
- redundant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
- G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
- G11C29/81—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a hierarchical redundancy scheme
Abstract
Description
Claims (30)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/922,068 US6563732B2 (en) | 2001-08-02 | 2001-08-02 | Redundancy circuit and method for flash memory devices |
EP02255371A EP1282138A1 (en) | 2001-08-02 | 2002-07-31 | Redundancy circuit and method for flash memory devices |
JP2002225117A JP2003077289A (en) | 2001-08-02 | 2002-08-01 | Redundancy circuit and method for flash memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/922,068 US6563732B2 (en) | 2001-08-02 | 2001-08-02 | Redundancy circuit and method for flash memory devices |
Publications (2)
Publication Number | Publication Date |
---|---|
US20030026129A1 US20030026129A1 (en) | 2003-02-06 |
US6563732B2 true US6563732B2 (en) | 2003-05-13 |
Family
ID=25446455
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/922,068 Expired - Lifetime US6563732B2 (en) | 2001-08-02 | 2001-08-02 | Redundancy circuit and method for flash memory devices |
Country Status (3)
Country | Link |
---|---|
US (1) | US6563732B2 (en) |
EP (1) | EP1282138A1 (en) |
JP (1) | JP2003077289A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040080998A1 (en) * | 2002-10-28 | 2004-04-29 | Sandisk Corporation | Unusable block management within a non-volatile memory system |
US20050185482A1 (en) * | 2004-02-20 | 2005-08-25 | Satoru Sugimoto | Semiconductor memory storage device and a redundancy control method therefor |
US20050265090A1 (en) * | 2004-05-12 | 2005-12-01 | Matsushita Electric Industrial Co., Ltd. | Semiconductor storage device |
US7151704B2 (en) | 2004-06-23 | 2006-12-19 | Matsushita Electric Industrial Co., Ltd. | Semiconductor memory device |
US20070103978A1 (en) * | 2005-11-08 | 2007-05-10 | Conley Kevin M | Memory with retargetable memory cell redundancy |
US20080144379A1 (en) * | 2006-12-15 | 2008-06-19 | Atmel Corporation | Implementation of column redundancy for a flash memory with a high write parallelism |
US20080205151A1 (en) * | 2007-02-27 | 2008-08-28 | Dae-Seok Byeon | Non-Volatile Memory Device and Method of Driving the Same |
US9424953B2 (en) | 2013-06-20 | 2016-08-23 | Samsung Electronics Co., Ltd. | Semiconductor memory device including repair circuit |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7286380B2 (en) * | 2005-09-29 | 2007-10-23 | Intel Corporation | Reconfigurable memory block redundancy to repair defective input/output lines |
CN113569517B (en) * | 2021-06-29 | 2024-02-23 | 南方电网科学研究院有限责任公司 | Circuit and chip for reducing area of column redundancy replacement circuit |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1996031882A1 (en) | 1995-04-05 | 1996-10-10 | Micron Technology, Inc. | Memory circuit with hierarchical bit line structure |
EP0745995A1 (en) | 1995-05-05 | 1996-12-04 | STMicroelectronics S.r.l. | Nonvolatile, in particular flash-EEPROM, memory device |
US5592417A (en) | 1994-01-31 | 1997-01-07 | Sgs-Thomson Microelectronics S.A. | Non-volatile programmable bistable multivibrator, programmable by the source, for memory redundancy circuit |
US5822256A (en) | 1994-09-06 | 1998-10-13 | Intel Corporation | Method and circuitry for usage of partially functional nonvolatile memory |
DE19825012A1 (en) | 1998-06-04 | 1999-08-12 | Siemens Ag | Integrated semiconductor memory device |
US5966336A (en) | 1988-10-07 | 1999-10-12 | Hitachi, Ltd. | Semiconductor device having redundancy circuit |
US20010028584A1 (en) * | 2000-03-28 | 2001-10-11 | Kabushiki Kaisha Toshiba | Semiconductor memory device having replacing defective columns with redundant columns |
US6307795B1 (en) * | 1999-07-16 | 2001-10-23 | Micron Technology, Inc. | Semiconductor memory having multiple redundant columns with offset segmentation boundaries |
US6320800B1 (en) * | 1999-06-03 | 2001-11-20 | Kabushiki Kaisha Toshiba | Semiconductor memory and nonvolatile semiconductor memory having redundant circuitry for replacing defective memory cell |
US20020060934A1 (en) * | 2000-11-23 | 2002-05-23 | Samsung Electronics Co., Ltd. | Semiconductor memory device and method of identifying programmed defective address thereof |
-
2001
- 2001-08-02 US US09/922,068 patent/US6563732B2/en not_active Expired - Lifetime
-
2002
- 2002-07-31 EP EP02255371A patent/EP1282138A1/en not_active Withdrawn
- 2002-08-01 JP JP2002225117A patent/JP2003077289A/en active Pending
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5966336A (en) | 1988-10-07 | 1999-10-12 | Hitachi, Ltd. | Semiconductor device having redundancy circuit |
US5592417A (en) | 1994-01-31 | 1997-01-07 | Sgs-Thomson Microelectronics S.A. | Non-volatile programmable bistable multivibrator, programmable by the source, for memory redundancy circuit |
US5822256A (en) | 1994-09-06 | 1998-10-13 | Intel Corporation | Method and circuitry for usage of partially functional nonvolatile memory |
WO1996031882A1 (en) | 1995-04-05 | 1996-10-10 | Micron Technology, Inc. | Memory circuit with hierarchical bit line structure |
EP0745995A1 (en) | 1995-05-05 | 1996-12-04 | STMicroelectronics S.r.l. | Nonvolatile, in particular flash-EEPROM, memory device |
DE19825012A1 (en) | 1998-06-04 | 1999-08-12 | Siemens Ag | Integrated semiconductor memory device |
US6320800B1 (en) * | 1999-06-03 | 2001-11-20 | Kabushiki Kaisha Toshiba | Semiconductor memory and nonvolatile semiconductor memory having redundant circuitry for replacing defective memory cell |
US20020012282A1 (en) * | 1999-06-03 | 2002-01-31 | Hidetoshi Saito | Semiconductor memory and nonvolatile semiconductor memory having redundant circuitry for replacing defective memory cell |
US6307795B1 (en) * | 1999-07-16 | 2001-10-23 | Micron Technology, Inc. | Semiconductor memory having multiple redundant columns with offset segmentation boundaries |
US20010028584A1 (en) * | 2000-03-28 | 2001-10-11 | Kabushiki Kaisha Toshiba | Semiconductor memory device having replacing defective columns with redundant columns |
US20020060934A1 (en) * | 2000-11-23 | 2002-05-23 | Samsung Electronics Co., Ltd. | Semiconductor memory device and method of identifying programmed defective address thereof |
Non-Patent Citations (2)
Title |
---|
EPO; European Search Report for EP 02255371.3; Nov. 18, 2002. |
U.S. patent application Ser. No. 09/922,176, Matarrese et al., filed Aug. 2, 2002. |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040080998A1 (en) * | 2002-10-28 | 2004-04-29 | Sandisk Corporation | Unusable block management within a non-volatile memory system |
US7171536B2 (en) * | 2002-10-28 | 2007-01-30 | Sandisk Corporation | Unusable block management within a non-volatile memory system |
US20050185482A1 (en) * | 2004-02-20 | 2005-08-25 | Satoru Sugimoto | Semiconductor memory storage device and a redundancy control method therefor |
US7068555B2 (en) | 2004-02-20 | 2006-06-27 | Spansion Llc | Semiconductor memory storage device and a redundancy control method therefor |
US20050265090A1 (en) * | 2004-05-12 | 2005-12-01 | Matsushita Electric Industrial Co., Ltd. | Semiconductor storage device |
US7136313B2 (en) | 2004-05-12 | 2006-11-14 | Matsushita Electric Industrial Co., Ltd. | Semiconductor storage device |
US7151704B2 (en) | 2004-06-23 | 2006-12-19 | Matsushita Electric Industrial Co., Ltd. | Semiconductor memory device |
US20070103977A1 (en) * | 2005-11-08 | 2007-05-10 | Conley Kevin M | Retargetable memory cell redundancy methods |
US20070103978A1 (en) * | 2005-11-08 | 2007-05-10 | Conley Kevin M | Memory with retargetable memory cell redundancy |
US7379330B2 (en) | 2005-11-08 | 2008-05-27 | Sandisk Corporation | Retargetable memory cell redundancy methods |
US7447066B2 (en) | 2005-11-08 | 2008-11-04 | Sandisk Corporation | Memory with retargetable memory cell redundancy |
US20080144379A1 (en) * | 2006-12-15 | 2008-06-19 | Atmel Corporation | Implementation of column redundancy for a flash memory with a high write parallelism |
US7551498B2 (en) | 2006-12-15 | 2009-06-23 | Atmel Corporation | Implementation of column redundancy for a flash memory with a high write parallelism |
TWI457933B (en) * | 2006-12-15 | 2014-10-21 | Artemis Acquisition Llc | A new implementation of column redundancy for a flash memory with a high write parallelism |
US20080205151A1 (en) * | 2007-02-27 | 2008-08-28 | Dae-Seok Byeon | Non-Volatile Memory Device and Method of Driving the Same |
US7660155B2 (en) | 2007-02-27 | 2010-02-09 | Samsung Electronics Co., Ltd. | Non-volatile memory device and method of driving the same |
US9424953B2 (en) | 2013-06-20 | 2016-08-23 | Samsung Electronics Co., Ltd. | Semiconductor memory device including repair circuit |
Also Published As
Publication number | Publication date |
---|---|
JP2003077289A (en) | 2003-03-14 |
US20030026129A1 (en) | 2003-02-06 |
EP1282138A1 (en) | 2003-02-05 |
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