|Número de publicación||US6596654 B1|
|Tipo de publicación||Concesión|
|Número de solicitud||US 09/996,619|
|Fecha de publicación||22 Jul 2003|
|Fecha de presentación||28 Nov 2001|
|Fecha de prioridad||24 Ago 2001|
|También publicado como||US6787483|
|Número de publicación||09996619, 996619, US 6596654 B1, US 6596654B1, US-B1-6596654, US6596654 B1, US6596654B1|
|Inventores||Atiye Bayman, Md Sazzadur Rahman, Weijie Zhang, Bart van Schravendijk, Vishal Gauri, George D. Papasoulitotis, Vikram Singh|
|Cesionario original||Novellus Systems, Inc.|
|Exportar cita||BiBTeX, EndNote, RefMan|
|Citas de patentes (5), Citada por (255), Clasificaciones (45), Eventos legales (5)|
|Enlaces externos: USPTO, Cesión de USPTO, Espacenet|
This application claims priority from prior U.S. Provisional Patent Application No. 60/314,924, titled “GAP FILL FOR HIGH ASPECT RATIO STRUCTURES,” filed Aug. 24, 2001 by Bayman et al., which is incorporated herein by reference for all purposes.
This invention relates to electronic device fabrication processes and associated apparatus. More specifically, the invention relates to chemical vapor deposition processes for forming dielectric layers in high aspect ratio, narrow width recessed features.
It is often necessary in semiconductor processing to fill a high aspect ratio gaps with insulating material. This is the case for shallow trench isolation, inter-metal dielectric layers, passivation layers, etc. As device geometries shrink and thermal budgets are reduced, void-free filling of high aspect ratio spaces (e.g., AR>3.0:1) becomes increasingly difficult due to limitations of existing deposition processes.
Most deposition methods either deposit more material on the upper region than on the lower region of a side-wall or form cusps at the entry of the gap. As a result the top part of a high aspect ratio structure sometimes closes prematurely leaving voids within the gap's lower portions. This problem is exacerbated in small features. Furthermore, as aspect ratios increase, the shape of the gap itself can contribute to the problem. High aspect ratio gaps often exhibit reentrant features, which make gap filling even more difficult. The most problematic reentrant feature is a narrowing at the top of the gap. Thus, the etched side-walls slope inward near the top of the gap. For a given aspect ratio feature, this increases the ratio of gap volume to gap access area seen by the precursor species during deposition. Hence voids and seams become even more likely.
While some specific gap fill processes such as TEOS/ozone SACVD (sub atmospheric chemical vapor deposition) deposited BPSG provide generally good results, such processes are expiring due to incompatibility with the advanced device constraint of a maximum thermal budget of 700° C.
Going forward, the deposition of silicon dioxide assisted by high-density plasma chemical vapor deposition (HDP CVD)—a directional (bottom-up) CVD process—is the method of choice for high aspect ratio gap-fill. The method deposits more material at the bottom of a high aspect ratio structure than on its side-walls. It accomplishes this by directing charged dielectric precursor species downward, to the bottom of the gap. Thus, HDP CVD is not an entirely diffusion-based (isotropic) process.
Nevertheless, some overhang still results at the entry region of the gap to be filled. This results from the non-directional deposition reactions of neutral species in the plasma reactor and from sputtering/redeposition processes. The directional aspect of the deposition process produces some high momentum charged species that sputter away bottom fill. The sputtered material tends to redeposit on the side-walls. Thus, the formation of overhang cannot be totally eliminated and is inherent to the physics and chemistry of the HDP CVD process. Of course, limitations due to overhang formation become ever more severe as the width of the gap to be filled decreases, the aspect ratio increases, and the features become reentrant.
To improve fabrication of advanced technology devices, the art requires better dielectric deposition processes that can fill high aspect ratio features of narrow width, without leaving gaps.
This invention addresses that need by providing hydrogen as a process gas in a high density plasma CVD process. This process has been found to provide void free high-quality gap filling with dielectric materials. These benefits occur even in very narrow, high aspect ratio features.
One aspect of the invention provides a method of filling gaps on a semiconductor substrate. The method may be characterized by the following sequence: (a) providing a substrate in a process chamber of a high density plasma chemical vapor deposition reactor; (b) introducing a process gas including at least hydrogen into the process chamber; and (c) applying a bias to the substrate. This method will effectively grow a dielectric film on the semiconductor substrate via HDP CVD. This process effectively fills gaps having widths of less than about 1.5 micrometer.
The process gas preferably provides hydrogen at a flow rate of at least about 400 sccm. This value is based on a 200 millimeter substrate. Larger substrates may require correspondingly higher flow rates. The inventors have found that hydrogen flow rates in this regime provide significantly reduced side-wall dielectric redeposition during HDP CVD.
In an alternative preferred embodiment, the substrate is heated to a temperature of between about 300 and 600° C. and held in this temperature range during the deposition process. While improved results from hydrogen addition are present over a much wider range of temperatures, this temperature range in particular has been found to provide superior results.
In yet another preferred embodiment, the process gas contains substantially no noble gas (e.g., argon, helium, and/or xenon). In many conventional systems, noble gases are used as carrier gases for HDP CVD. Note that while many embodiments of this invention do in fact employ noble carrier gases, certain preferred embodiments require no noble gas.
To deposit dielectric, the carrier gas should include one or more dielectric precursors. In many commercially important embodiments, the dielectric is a silicon oxide or related material. For these embodiments, the process gas includes a volatile silicon-containing precursor, in addition to the hydrogen gas. Examples of such silicon-containing precursors include SiH4, SiF4, Si2H6, TEOS, TMCTS, OMCTS, methyl-silane, dimethyl-silane, 3MS, 4MS, TMDSO, TMDDSO, DMDMS and mixtures thereof. During deposition, the process decomposes the silicon-containing reactant to allow plasma phase reacting of the silicon-containing gas on the surface of the substrate.
To form silicon oxides, the process gas should also include a source of oxygen. Some silicon-containing precursors have some covalently bound oxygen (e.g., TEOS). However, additional oxygen is typically required, even for the oxygen-containing precursors. Hence, the process gas typically includes elemental oxygen or some other source of atomic oxygen such as nitrous oxide or nitric oxide.
To tailor the characteristics of the dielectric, various dopants or other modifiers may be provided. Examples of dopants include boron and phosphorus. The processes of this invention may provide these dopants via volatile phosphorus-containing process gases and/or volatile boron-containing process gases. The dielectric may also comprise a silicon oxynitride and/or a silicon oxyfluoride. Such materials may be made via processes of this invention that employ nitrogen-containing precursors (e.g., N2, N2O, NO, NH3, NF3) and/or fluorine-containing precursors.
The detailed description below will further discuss the benefits and features of this invention.
FIG. 1A is a graph showing how the ratio of side-wall to bottom dielectric growth varies with hydrogen gas flow rate.
FIG. 1B presents 3 micrographs showing successively decreased void formation with increasing hydrogen gas flow rate.
FIG. 2A is a rough schematic cross-sectional diagram of a trench or via having problematic side-wall deposition of dielectric during HDP CVD.
FIG. 2B is a rough schematic cross-sectional diagram of a trench or via (as in FIG. 2A) having much less side-wall deposition of dielectric because the dielectric was grown with a hydrogen containing process gas.
FIG. 3 is a process flow diagram depicting a process context of the present invention.
FIG. 4 is a block diagram depicting some components of a suitable CVD reactor for performing HDP CVD in accordance with this invention.
FIG. 5 presents FTIR absorption spectra for silicon oxide dielectrics deposited by processes with and without hydrogen process gas.
FIG. 6 is a graph showing that dielectric in-film stress is not compromised by employing hydrogen containing process gas.
The present invention relates to chemical vapor deposition processes that can fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen in the reactive mixture.
Even though the formation of overhang and side-wall growth can not be entirely eliminated in chemical vapor deposition reactions employing plasma, film growth on the side-wall of the gap can be minimized and bottom-up fill enhanced by minimizing the sticking probability of fragments on the side-wall of the gap. Using hydrogen in the gas mixture seems to accomplish this. The addition of hydrogen likely impacts in a positive way the plasma and/or side-wall surface chemistry and species mobility resulting in improved gap-fill. Note that this invention is not limited to any particular mechanism of action in which the hydrogen participates.
As indicated, this invention pertains to improved high density plasma (HDP) chemical vapor deposition (CVD) processes. Generally, a high density plasma is any plasma having electron density of 5×109 electrons per cubic centimeter. Typically, though not necessarily, high density plasma reactors operate at relatively low pressures, in the range of 100 mTorr or lower.
FIG. 1A is a graph showing how the ratio of side-wall to bottom dielectric growth improves with increasing hydrogen gas flow rate. The data shown in this figure were taken from a Novellus SPEED reactor available from Novellus Systems, Inc. of San Jose, Calif. employing a low frequency (reactor electrode) power of 4000 Watts and a high frequency (substate) power of between 650 and 2900 Watts, depending on the amount of hydrogen. As the level of hydrogen was varied, the high frequency power was varied to maintain an effectively constant sputter to deposition ratio. Silicon oxide was deposited in 3.5:1 aspect ratio gaps of 0.13 micrometer widths.
Note that the data in FIG. 1A was taken for two different sets of process conditions, identified as SD ratio=0.14 and SD ratio=0.17. SD ratio refers to the sputter/deposition ratio. It is obtained by measuring the deposition rate for a given dielectric deposition process and then measuring the sputter rate for that same process performed without the silicon-containing precursor (e.g., silane). The SD ratio is given by the following expression:
In the FIG. 1A the process gas included, in addition to varying amounts of hydrogen, 35 sccm SiH4, 47 sccm O2, and 40 sccm He (except in the cases where 0 sccm H2 was used, in which case 100 sccm He was used). The deposition reaction proceeded under these conditions to a thickness of about 1550 Angstroms silicon dioxide measured at the field regions on a 200 millimeter wafer.
As shown in the graph, the ratio of side-wall to bottom growth dielectric thickness attained a maximum of slightly over 0.14 for process gases including either no hydrogen or 200 sccm hydrogen. When 500 sccm hydrogen was introduced (together with the other gases), the ratio dropped to about 0.1. And when 1000 sccm hydrogen was utilized, the ratio dropped further to about 0.065. Clearly, the presence of hydrogen in the process reduces the relative amount of side-wall deposition.
FIG. 1B presents 3 micro graphs showing successively decreased void formation with increasing hydrogen gas flow rate. For each of the three micrographs, the following process conditions were employed.
Left-most structure: 0 sccm hydrogen, 180 sccm helium, 60 sccm silane, 78 sccm oxygen, 2500 Watts low frequency power, and 1200 Watts high frequency power.
Middle structure: 400 sccm hydrogen, 40 sccm helium, 72 sccm silane, 94 sccm oxygen, 4000 Watts low frequency power, and 4200 Watts high frequency power.
Right-most structure: 1000 sccm hydrogen, 40 sccm helium, 45 sccm silane, 62 sccm oxygen, 4000 Watts low frequency power, and 3800 Watts high frequency power.
As can be seen, the voids left from the 400 sccm hydrogen process are significantly smaller than those left from the 0 sccm hydrogen process. Further, the voids essentially disappear when 1000 sccm hydrogen was employed.
FIGS. 2A and 2B show in rough schematic fashion the variation in side-wall deposition that can be expected in a trench filled without hydrogen containing process gas (FIG. 2A) and with hydrogen containing process gas (FIG. 2B). In both cases, a HDP CVD process provides a bottom fill. And in both cases, dielectric material 205 from the bottom of the trench is sputtered by high momentum species from the plasma. Sputtered dielectric 207 flies out toward the side-walls 209. In the case of hydrogen containing process gas, the sputtered species do not significantly contribute to the growing side-wall coverage (dielectric) 211. In the case of hydrogen-free process gas, however, side-dielectric 211′ rapidly grows in a lateral direction due to redeposition of the sputtered species 207. Dielectric also deposits on the field regions
A general process context for the gap filling technology of this invention is depicted FIG. 3. As shown, a deposition process 301 begins at block 303 with a device (often a robot arm) delivering a substrate to a process chamber of a high-density plasma chemical vapor deposition reactor. Subsequently, the process will deposit dielectric on the substrate. Providing the substrate to the reactor may involve clamping the substrate to a pedestal or other support in the chamber. For this purpose, an electrostatic or mechanical chuck may be employed.
After the wafer is appropriately situated in the chamber, the process provides a preclean operation. See block 305. This is intended to remove polymer or other residues in the gap prior to the dielectric film growing. Preferably, this is accomplished with a plasma phase reaction of at least one of an oxygen-containing gas and a hydrogen-containing gas. Oxygen is used for species that require oxidation and hydrogen is used for species that require reduction.
After the substrate has been appropriately cleaned, various other operations associated with dielectric deposition are performed. These operations are represented by reference numbers 307, 309, 311, 313, and 315. These operations may be performed sequentially in the order shown or in some other order. In addition, some or all of these operations may be performed concurrently, as they are implemented by different subsystems of the reactor.
In block 307, the process adjusts the substrate temperature to a level promoting the deposition of the dielectric layer. Typically, this temperature is between about 30-1000° C. (more preferably about 300 to 600° C.). The temperature control mechanism may gradually raise the temperature during deposition or it may preheat the wafer to first drive out certain interfering species. During deposition, the temperature may be maintained by supplying a heat transfer gas between a back surface of the substrate and a surface of the substrate holder on which the substrate is supported during the film growth operation.
At block 309, the process adjusts the pressure of the process chamber to a level suitable for the HDP CVD reaction. In some specific embodiments, this pressure is not greater than about 100 mTorr. The pressure should allow relatively rapid deposition while maintaining a high density plasma under the applied frequency and power.
At block 311, the reactor system introduces a process gas to the reaction chamber via an inlet. The process gas includes dielectric precursor species such as high vapor pressure silicon-containing compounds and dopant precursors. Molecular oxygen or another oxygenated compound will often be present. Sometimes, though not necessarily, an inert carrier gas is present. Importantly, the introduced process gas also includes molecular elemental hydrogen. All the process gas components are introduced at specified flow rates.
At block 313, an electrical subsystem applies electrical energy of appropriate power and frequency to one or more electrodes of the reaction chamber. The power and frequency are chosen to generate a high-density plasma in the chamber, given the process gas concentration, pressure, and other process parameters.
Finally, at 315, an electrical subsystem applies a bias to the substrate, to thereby direct charged precursor species from the plasma onto the substrate and grow a dielectric film. Note that the substrate itself serves as an electrode here. Its bias accelerates charged species to it. Typically, the substrate electrode is powered by a high frequency rf bias and the other electrode is powered by a lower frequency rf source.
When the dielectric layer is deposited on the substrate to a desired thickness via the high density plasma chemical vapor deposition, the process is complete. After evacuating the chamber and adjusting the temperature and pressure as appropriate, the substrate may be removed for further processing.
Various plasma reactor designs are suitable for use with this invention. The particular design is not critical to this invention. It merely needs to support HDP CVD dielectric layer formation on appropriate substrates. Examples of suitable reactors include the Novellus SPEED reactor, available from Novellus Systems, Inc. of San Jose, Calif., and the Ultima reactor, available from Applied Materials, Inc. of Santa Clara, Calif.
The principal components of most suitable reactors include a reaction chamber, a process gas delivery system, a support for the substrate, one or more electrodes to generate a plasma and a bias source for the substrate. A temperature control system is typically used to heat the substrate.
FIG. 4 provides a simple block diagram depicting various reactor components arranged as in a conventional reactor. As shown, a reactor 401 includes a process chamber 403 which encloses other components of the reactor and serves to contain the plasma generated by an electrode 405. In one example, the process chamber walls are made from aluminum, aluminum oxide, and/or other suitable material. Electrode 405 is powered by a “low frequency” rf source 406. The power and frequency supplied by source 406 is sufficient to generate high-density plasma from the process gas.
Within the reactor, a wafer pedestal 407 supports a substrate 409. The pedestal typically includes a chuck to hold the substrate in place during the deposition reaction. The chuck may be an electrostatic chuck, a mechanical chuck or various other types of chuck as are available for use in the industry and/or research.
A heat transfer subsystem including a line 411 for supplying a heat transfer fluid controls the temperature of substrate 409. In some embodiments, the heat transfer fluid comprises at least one of helium and argon gas. Water or other liquid is used in other embodiments. The heat transfer fluid is supplied to a space 413 between the surface of the substrate and a surface of the chuck.
A “high frequency” rf source 415 serves to electrically bias substrate 409 and draw charged precursor species onto the substrate for the deposition reaction. Electrical energy from source 415 is coupled to substrate 409 via an electrode or capacitive coupling, for example. Note that the bias applied to the substrate need not be an rf bias. Other frequencies and DC bias may be used as well. In a specific embodiment, source 415 supplies a radio frequency bias to the substrate, and the radio frequency bias is generated by supplying the electrode with at least 0.2 W/cm2 of power.
The process gases are introduced via one or more inlets 417 and 417′. The gases may be premixed or not. A source of elemental hydrogen gas provides hydrogen for the process gas. Other sources of precursor gases and carrier gases may also be provided. Preferably, the process gas is introduced through a gas supply inlet mechanism including orifices. In some embodiments, at least some of the orifices orient the process gas along an axis of injection intersecting an exposed surface of the substrate at an acute angle. Further, the gas or gas mixture may be introduced from a primary gas ring, which may or may not direct the gas toward the substrate surface. Injectors may be connected to the primary gas ring to direct at least some of the gas or gas mixture into the chamber and toward substrate. Note that injectors, gas rings or other mechanisms for directing process gas toward the wafer are not critical to this invention. The sonic front caused by the gas entering the chamber will itself cause the gas to rapidly disperse in all directions—including toward the substrate.
The process gas exits chamber 403 via an outlet 419. A vacuum pump (e.g., a turbomolecular pump) typically draws the gas out and maintains a suitably low pressure within the reactor.
The process gas itself will have a particular composition. Each component will be present at a particular level. Typically, the composition is represented by flow rates of the constituent gases in units of standard cubic centimeter per minute (sccm).
In all embodiments of this invention, elemental hydrogen is introduced into the chamber as a process gas. The process gas will also include a precursor for the deposition layer. If the dielectric is a silicon-containing dielectric, then the process gas will include a silicon-bearing compound such as SiH4, SiF4, Si2H6, TEOS (tetraethyl orthosilicate), TMCTS (tetramethyl-cyclotetrasiloxane), OMCTS (octamethyl-cyclotetrasiloxane), methyl-silane, dimethyl-silane, 3MS (trimethylsilane), 4MS (tetramethylsilane), TMDSO (tetramethyl-disiloxane), TMDDSO (tetramethyl-diethoxyl-disiloxane), DMDMS (dimethyl-dimethoxyl-silane) and mixtures thereof. During deposition, the process decomposes the silicon-containing reactant to form a silicon-containing gas and plasma phase species, which can react on the surface of the substrate.
Oxygen to form the silicon oxide or other dielectric material may be provided by the silicon-containing precursor itself or from another process gas such as elemental oxygen (O2), nitric oxide (NO), and/or nitrous oxide (N2O).
Typical flow rate ranges for process gases of the present invention are listed below.
Flow Rate (sccm)
Generally, other oxygen and silicon-containing compounds can be substituted for those listed in this table. Depending upon the atom counts in the precursor gases, the flow rate ranges may have to be changed. While there are no precise rules for modifying flow rates as a function of molecular structure, generally the flow rate of the silicon-containing precursor may be reduced by a factor corresponding to the number of silicon atoms in the molecule. So, for example, if the molecule contains two silicon atoms, one may expect to reduce the flow rate of the silicon-containing precursor to a level of between about 5 and 125 sccm.
Note also that the presence of hydrogen in the process gas may require that the ratio of oxygen containing precursor to silicon-containing precursor be adjusted upward (in comparison to a standard hydrogen-free process), as hydrogen reacts with and removes the oxygen from the deposition reaction. Regardless of this process variation, it has been found that the presence of hydrogen in the process gas does not detrimentally affect the physical and material properties of the deposited dielectric film.
In preferred embodiments, the flow rate of hydrogen employed is at least about 200 sccm, and more preferably at least about 400 sccm, and most preferably at least about 500 sccm—all based on a 200 millimeter substrate. Larger substrates require higher flow rates. The flow rate may vary somewhat when special injector configurations are employed.
In certain preferred embodiments, the invention is practiced with processes gases containing substantially no noble gas (e.g., argon, helium, or xenon). Other embodiments of the present invention, however, include the use of noble gas carriers such as argon, helium, and/or xenon. The use of noble gases can be practiced under the conditions of the above-described embodiments.
For doped dielectrics (particularly silicon dioxide based dielectrics), the process gas may include a dopant precursor such as a boron-containing gas, a phosphorus-containing gas, or a mixture thereof. In a specific embodiment, the gas includes one or more boron-containing reactants and one or more phosphorus-containing reactants and the dielectric film includes a phosphorus- and boron-doped silicon oxide glass (BPSG). Examples of suitable boron and phosphorus precursor gases include the following: B2H6 and PH3.
If the dielectric is to contain an oxyfluoride (e.g., silicon oxyfluoride), then the process gas preferably includes a fluorine-containing reactant such as silicon hexafluoride. If the dielectric is to contain an oxynitride (e.g., silicon oxynitride), then the process gas preferably includes a nitrogen-containing reactant such as N2, NH3, NF3, NO, N2O, and mixtures thereof.
Reactor pressure is held at a value necessary to sustain the high-density plasma. Preferably the process vessel is maintained at a pressure of at most about 100 mTorr. In some cases, the process chamber pressure is maintained below 1 mTorr. For many applications, however, the pressure is maintained between about 1 and 100 mTorr; most preferably between about 1 and 30 mTorr.
The temperature within the process vessel should be maintained sufficiently high to ensure that the dielectric deposition reaction proceeds efficiently. Hence, the temperature preferably resides at values between about 30 and 1000° C. This temperature will vary depending upon the types of precursors employed in the reaction. Further, the temperature may be limited by process constraints, such as thermal budget limitations that preclude temperatures above 700-750° C. Such constraints become increasingly common with advanced technologies and corresponding smaller feature sizes. For such applications, the process temperature is preferably maintained between about 30 and 750° C. In particularly preferred embodiments, the substrate temperature is maintained between about 300 and 600° C., even more preferably between about 350 and 450° C.
As indicated, to control the substrate temperature, the reactor may supply a heat transfer gas between a surface of the substrate and a surface of the substrate holder on which the substrate is supported during film deposition. The heat transfer gas may include at least one of helium and argon. The back-side helium pressure is set by the temperature requirements of the process (a typical range being between 0-15 Torr).
For some applications, it may be desirable to preheat the wafer to a pre-specified relatively low temperature and then gradually raise the temperature. This allows for isothermal operation. The goal is to start the deposition and then maintain the wafer temperature within a narrow range during the entire deposition process.
The low frequency power applied to the upper electrode (for generating the plasma) typically varies from 1 kW to 20 kW, and the high frequency power (for biasing the wafer) typically reaches at least about 0.2 W/cm2 (preferably varying from about 0.5 kW to 10 kW) depending on the substrate size (e.g., 200 or 300 mm diameter) and the requirements of the specific process being used.
As indicated above, the bias applied to the substrate is typically a radio frequency bias. Applying radio frequency bias to the substrate involves supporting the substrate on a substrate holder having an electrode supplying a radio frequency bias to the substrate. For many embodiments, the radio frequency bias applied to the substrate is at the frequency range of between about 100 kHz and 27 MHz. The frequency range applied to the upper, plasma-generating electrode is typically between about 300 kHz and 27 MHz.
The above-described processes and apparatuses may deposit dielectric on any type of substrate that requires thin dielectric layers. Often, the substrate will be a semiconductor wafer having gaps in need of dielectric filling. The invention is not, however, limited to such applications. It may be employed in a myriad of other fabrication processes such as for fabricating flat panel displays.
As indicated above, this invention finds particular value in integrated circuit fabrication. The gap filling processes are performed on partially fabricated integrated circuits employing semiconductor substrates. In specific examples, the gap filling processes of this invention are employed to form shallow trench isolation, inter-metal dielectric layers, passivation layers, etc.
As indicated, the invention can effectively fill gaps having widths of 1.5 micrometers or less and aspect ratios of 3:1 or greater. More aggressive structures having, e.g., greater aspect ratios and smaller widths may also be used. In one example the gap width is 0.15 micrometers or less.
The dielectrics employed to fill those gaps will often be a silicon oxide such as silicon dioxide, silicon oxynitride, silicon oxyfluoride, and doped variants of each of these. Therefore, the scope of the invention includes at least fluorine-doped, phosphorus-doped, boron-doped, and boron/phosphorus-doped oxides. As indicated, the dielectric may also be a phosphorus- and boron-doped silicon oxide glass (BPSG).
To test the hydrogen gas process, dielectric was deposited on 622 separate wafers using hydrogen containing process gas. The process parameters were as follows:
Under these conditions, it was found that the overall film thickness and refractive index were remarkably consistent from wafer to wafer. Further, the film thickness was found to vary by no more than about 2% within the wafer. And the film refractive index was found to vary by no more than about 0.1% within the wafer.
FIG. 5 shows an FTIR absorbance spectrum of a dielectric film deposited by a standard process (lower curve) and a hydrogen containing process (upper curve). Importantly, both curves have peaks at the same spectral locations and the ratios of those peaks (upper curve:lower curve) are identical. Also, note that there are no peaks associated with Si—H, H2O, or SiO—H. Each of these detrimental species could potentially form when hydrogen is present. The films were deposited using the conditions listed above.
FIG. 6 shows in-film stress measurements for dielectric films deposited under the following conditions: SiH4=72 sccm, O2=94 sccm, He=40 sccm, H2=500 sccm, and low frequency power=4000 Watts. As shown, the film stress remains at about 230 MPa over a wide range of wafer temperatures (used in during processing). These numbers are consistent with those derived by standard chemistry processes.
While this invention has been described in terms of a few preferred embodiments, it should not be limited to the specifics presented above. Many variations on the above-described preferred embodiments, may be employed. Therefore, the invention should be broadly interpreted with reference to the following claims.
|Patente citada||Fecha de presentación||Fecha de publicación||Solicitante||Título|
|US6030881||5 May 1998||29 Feb 2000||Novellus Systems, Inc.||High throughput chemical vapor deposition process capable of filling high aspect ratio structures|
|US6106678 *||22 May 1998||22 Ago 2000||Lam Research Corporation||Method of high density plasma CVD gap-filling|
|US6184158 *||23 Dic 1996||6 Feb 2001||Lam Research Corporation||Inductively coupled plasma CVD|
|US6200412 *||16 Feb 1996||13 Mar 2001||Novellus Systems, Inc.||Chemical vapor deposition system including dedicated cleaning gas injection|
|US6232196 *||5 Mar 1999||15 May 2001||Asm America, Inc.||Method of depositing silicon with high step coverage|
|Patente citante||Fecha de presentación||Fecha de publicación||Solicitante||Título|
|US6802944||23 Oct 2002||12 Oct 2004||Applied Materials, Inc.||High density plasma CVD process for gapfill into high aspect ratio features|
|US6808748 *||23 Ene 2003||26 Oct 2004||Applied Materials, Inc.||Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology|
|US6812153||30 Abr 2002||2 Nov 2004||Applied Materials Inc.||Method for high aspect ratio HDP CVD gapfill|
|US6890597 *||9 May 2003||10 May 2005||Applied Materials, Inc.||HDP-CVD uniformity control|
|US6908862||3 May 2002||21 Jun 2005||Applied Materials, Inc.||HDP-CVD dep/etch/dep process for improved deposition into high aspect ratio features|
|US6982207 *||11 Jul 2003||3 Ene 2006||Micron Technology, Inc.||Methods for filling high aspect ratio trenches in semiconductor layers|
|US6989337 *||2 Oct 2003||24 Ene 2006||United Microelectric Corp.||Silicon oxide gap-filling process|
|US7001854||11 Oct 2002||21 Feb 2006||Novellus Systems, Inc.||Hydrogen-based phosphosilicate glass process for gap fill of high aspect ratio structures|
|US7064077 *||1 Oct 2004||20 Jun 2006||Applied Materials||Method for high aspect ratio HDP CVD gapfill|
|US7067440 *||13 Jul 2004||27 Jun 2006||Novellus Systems, Inc.||Gap fill for high aspect ratio structures|
|US7078312||2 Sep 2003||18 Jul 2006||Novellus Systems, Inc.||Method for controlling etch process repeatability|
|US7081414||23 May 2003||25 Jul 2006||Applied Materials, Inc.||Deposition-selective etch-deposition process for dielectric film gapfill|
|US7087497||4 Mar 2004||8 Ago 2006||Applied Materials||Low-thermal-budget gapfill process|
|US7094713||2 Jun 2004||22 Ago 2006||Novellus Systems, Inc.||Methods for improving the cracking resistance of low-k dielectric materials|
|US7097886||13 Dic 2002||29 Ago 2006||Applied Materials, Inc.||Deposition process for high aspect ratio trenches|
|US7122485 *||9 Dic 2002||17 Oct 2006||Novellus Systems, Inc.||Deposition profile modification through process chemistry|
|US7163896||10 Dic 2003||16 Ene 2007||Novellus Systems, Inc.||Biased H2 etch process in deposition-etch-deposition gap fill|
|US7166531||31 Ene 2005||23 Ene 2007||Novellus Systems, Inc.||VLSI fabrication processes for introducing pores into dielectric materials|
|US7176039||21 Sep 2004||13 Feb 2007||Novellus Systems, Inc.||Dynamic modification of gap fill process characteristics|
|US7176144||23 Feb 2004||13 Feb 2007||Novellus Systems, Inc.||Plasma detemplating and silanol capping of porous dielectric films|
|US7205240 *||4 Jun 2003||17 Abr 2007||Applied Materials, Inc.||HDP-CVD multistep gapfill process|
|US7208389||26 Sep 2003||24 Abr 2007||Novellus Systems, Inc.||Method of porogen removal from porous low-k films using UV radiation|
|US7211525||16 Mar 2005||1 May 2007||Novellus Systems, Inc.||Hydrogen treatment enhanced gap fill|
|US7217658||7 Sep 2004||15 May 2007||Novellus Systems, Inc.||Process modulation to prevent structure erosion during gap fill|
|US7241704||27 Ago 2004||10 Jul 2007||Novellus Systems, Inc.||Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups|
|US7253125||16 Abr 2004||7 Ago 2007||Novellus Systems, Inc.||Method to improve mechanical strength of low-k dielectric film using modulated UV exposure|
|US7259079||31 Ene 2005||21 Ago 2007||Micron Technology, Inc.||Methods for filling high aspect ratio trenches in semiconductor layers|
|US7265061||11 Mar 2004||4 Sep 2007||Novellus Systems, Inc.||Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties|
|US7294588||24 Mar 2006||13 Nov 2007||Applied Materials, Inc.||In-situ-etch-assisted HDP deposition|
|US7326444||14 Sep 2004||5 Feb 2008||Novellus Systems, Inc.||Methods for improving integration performance of low stress CDO films|
|US7329586||24 Jun 2005||12 Feb 2008||Applied Materials, Inc.||Gapfill using deposition-etch sequence|
|US7332409 *||9 Jun 2005||19 Feb 2008||Samsung Electronics Co., Ltd.||Methods of forming trench isolation layers using high density plasma chemical vapor deposition|
|US7341761||11 Mar 2004||11 Mar 2008||Novellus Systems, Inc.||Methods for producing low-k CDO films|
|US7344996||22 Jun 2005||18 Mar 2008||Novellus Systems, Inc.||Helium-based etch process in deposition-etch-deposition gap fill|
|US7381451||17 Nov 2004||3 Jun 2008||Novellus Systems, Inc.||Strain engineering—HDP thin film with tensile stress for FEOL and other applications|
|US7381644||23 Dic 2005||3 Jun 2008||Novellus Systems, Inc.||Pulsed PECVD method for modulating hydrogen content in hard mask|
|US7381662||14 Mar 2006||3 Jun 2008||Novellus Systems, Inc.||Methods for improving the cracking resistance of low-k dielectric materials|
|US7390537||27 Feb 2004||24 Jun 2008||Novellus Systems, Inc.||Methods for producing low-k CDO films with low residual stress|
|US7399388||25 Jul 2003||15 Jul 2008||Applied Materials, Inc.||Sequential gas flow oxide deposition technique|
|US7446061||5 Dic 2006||4 Nov 2008||Kabushiki Kaihsa Toshiba||Method of forming insulating film, method of manufacturing semiconductor device and their controlling computer program|
|US7473653||18 Jun 2007||6 Ene 2009||Novellus Systems, Inc.||Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups|
|US7476621||1 Mar 2006||13 Ene 2009||Novellus Systems, Inc.||Halogen-free noble gas assisted H2 plasma etch process in deposition-etch-deposition gap fill|
|US7482245||20 Jun 2006||27 Ene 2009||Novellus Systems, Inc.||Stress profile modulation in STI gap fill|
|US7510982||6 Jun 2005||31 Mar 2009||Novellus Systems, Inc.||Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticles|
|US7524750||27 Oct 2006||28 Abr 2009||Applied Materials, Inc.||Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVD|
|US7611757||28 Jun 2007||3 Nov 2009||Novellus Systems, Inc.||Method to improve mechanical strength of low-K dielectric film using modulated UV exposure|
|US7622162||24 Nov 2009||Novellus Systems, Inc.||UV treatment of STI films for increasing tensile stress|
|US7622400||18 May 2004||24 Nov 2009||Novellus Systems, Inc.||Method for improving mechanical properties of low dielectric constant materials|
|US7628897 *||12 Sep 2003||8 Dic 2009||Applied Materials, Inc.||Reactive ion etching for semiconductor device feature topography modification|
|US7629224||8 Dic 2009||Novellus Systems, Inc.||VLSI fabrication processes for introducing pores into dielectric materials|
|US7651922||26 Ene 2010||Kabushiki Kaisha Toshiba||Semiconductor device fabrication method|
|US7678715||21 Dic 2007||16 Mar 2010||Applied Materials, Inc.||Low wet etch rate silicon nitride film|
|US7691753||5 Jun 2006||6 Abr 2010||Applied Materials, Inc.||Deposition-selective etch-deposition process for dielectric film gapfill|
|US7695765||13 Abr 2010||Novellus Systems, Inc.||Methods for producing low-stress carbon-doped oxide films with improved integration properties|
|US7737525||7 Nov 2007||15 Jun 2010||Novellus Systems, Inc.||Method for producing low-K CDO films|
|US7745352||29 Jun 2010||Applied Materials, Inc.||Curing methods for silicon dioxide thin films deposited from alkoxysilane precursor with harp II process|
|US7781351||24 Ago 2010||Novellus Systems, Inc.||Methods for producing low-k carbon doped oxide films with low residual stress|
|US7790633||11 Sep 2006||7 Sep 2010||Novellus Systems, Inc.||Sequential deposition/anneal film densification method|
|US7790634 *||7 Sep 2010||Applied Materials, Inc||Method for depositing and curing low-k films for gapfill and conformal film applications|
|US7799698||5 Jun 2006||21 Sep 2010||Applied Materials, Inc.||Deposition-selective etch-deposition process for dielectric film gapfill|
|US7799705||21 Sep 2010||Novellus Systems, Inc.||Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups|
|US7803722||22 Oct 2007||28 Sep 2010||Applied Materials, Inc||Methods for forming a dielectric layer within trenches|
|US7825038||2 Nov 2010||Applied Materials, Inc.||Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen|
|US7851232||30 Oct 2006||14 Dic 2010||Novellus Systems, Inc.||UV treatment for carbon-containing low-k dielectric repair in semiconductor processing|
|US7867923||22 Oct 2007||11 Ene 2011||Applied Materials, Inc.||High quality silicon oxide films by remote plasma CVD from disilane precursors|
|US7892985||22 Feb 2011||Novellus Systems, Inc.||Method for porogen removal and mechanical strength enhancement of low-k carbon doped silicon oxide using low thermal budget microwave curing|
|US7902080||8 Mar 2011||Applied Materials, Inc.||Deposition-plasma cure cycle process to enhance film quality of silicon dioxide|
|US7906174||7 Dic 2006||15 Mar 2011||Novellus Systems, Inc.||PECVD methods for producing ultra low-k dielectric films using UV treatment|
|US7923376||30 Mar 2006||12 Abr 2011||Novellus Systems, Inc.||Method of reducing defects in PECVD TEOS films|
|US7923385||12 Abr 2011||Novellus Systems, Inc.||Methods for producing low stress porous and CDO low-K dielectric materials using precursors with organic functional groups|
|US7935643||3 May 2011||Applied Materials, Inc.||Stress management for tensile films|
|US7939422||10 May 2011||Applied Materials, Inc.||Methods of thin film process|
|US7943531||17 May 2011||Applied Materials, Inc.||Methods for forming a silicon oxide layer over a substrate|
|US7951683||31 May 2011||Novellus Systems, Inc||In-situ process layer using silicon-rich-oxide for etch selectivity in high AR gapfill|
|US7972976||27 Oct 2009||5 Jul 2011||Novellus Systems, Inc.||VLSI fabrication processes for introducing pores into dielectric materials|
|US7989365||2 Ago 2011||Applied Materials, Inc.||Remote plasma source seasoning|
|US7994019||27 Sep 2010||9 Ago 2011||Applied Materials, Inc.||Silicon-ozone CVD with reduced pattern loading using incubation period deposition|
|US8012887||6 Sep 2011||Applied Materials, Inc.||Precursor addition to silicon oxide CVD for improved low temperature gapfill|
|US8030172 *||4 Oct 2011||Cypress Semiconductor Corporation||Isolation technology for submicron semiconductor devices|
|US8043667||25 Oct 2011||Novellus Systems, Inc.||Method to improve mechanical strength of low-K dielectric film using modulated UV exposure|
|US8062983||11 Feb 2009||22 Nov 2011||Novellus Systems, Inc.||Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticles|
|US8110493||7 Feb 2012||Novellus Systems, Inc.||Pulsed PECVD method for modulating hydrogen content in hard mask|
|US8133797||16 May 2008||13 Mar 2012||Novellus Systems, Inc.||Protective layer to enable damage free gap fill|
|US8137465||26 Abr 2005||20 Mar 2012||Novellus Systems, Inc.||Single-chamber sequential curing of semiconductor wafers|
|US8211510||31 Ago 2007||3 Jul 2012||Novellus Systems, Inc.||Cascaded cure approach to fabricate highly tensile silicon nitride films|
|US8232176||20 Jun 2007||31 Jul 2012||Applied Materials, Inc.||Dielectric deposition and etch back processes for bottom up gapfill|
|US8236708||7 Ago 2012||Applied Materials, Inc.||Reduced pattern loading using bis(diethylamino)silane (C8H22N2Si) as silicon precursor|
|US8242028||14 Ago 2012||Novellus Systems, Inc.||UV treatment of etch stop and hard mask films for selectivity and hermeticity enhancement|
|US8242031||14 Ago 2012||Applied Materials, Inc.||High quality silicon oxide films by remote plasma CVD from disilane precursors|
|US8282768||9 Oct 2012||Novellus Systems, Inc.||Purging of porogen from UV cure chamber|
|US8304351||20 Dic 2010||6 Nov 2012||Applied Materials, Inc.||In-situ ozone cure for radical-component CVD|
|US8318584||3 Jun 2011||27 Nov 2012||Applied Materials, Inc.||Oxide-rich liner layer for flowable CVD gapfill|
|US8329262||11 Dic 2012||Applied Materials, Inc.||Dielectric film formation using inert gas excitation|
|US8357435||15 Sep 2008||22 Ene 2013||Applied Materials, Inc.||Flowable dielectric equipment and processes|
|US8414747||9 Abr 2013||Applied Materials, Inc.||High-throughput HDP-CVD processes for advanced gapfill applications|
|US8445078||20 Sep 2011||21 May 2013||Applied Materials, Inc.||Low temperature silicon oxide conversion|
|US8449942||28 May 2013||Applied Materials, Inc.||Methods of curing non-carbon flowable CVD films|
|US8450191||28 May 2013||Applied Materials, Inc.||Polysilicon films by HDP-CVD|
|US8454750||4 Jun 2013||Novellus Systems, Inc.||Multi-station sequential curing of dielectric films|
|US8465991||20 Dic 2010||18 Jun 2013||Novellus Systems, Inc.||Carbon containing low-k dielectric constant recovery using UV treatment|
|US8466073||18 Jun 2013||Applied Materials, Inc.||Capping layer for reduced outgassing|
|US8476142||21 Mar 2011||2 Jul 2013||Applied Materials, Inc.||Preferential dielectric gapfill|
|US8497211||6 Jun 2012||30 Jul 2013||Applied Materials, Inc.||Integrated process modulation for PSG gapfill|
|US8512818||1 Jun 2012||20 Ago 2013||Novellus Systems, Inc.||Cascaded cure approach to fabricate highly tensile silicon nitride films|
|US8518210||31 Jul 2012||27 Ago 2013||Novellus Systems, Inc.||Purging of porogen from UV cure chamber|
|US8524004||15 Jun 2011||3 Sep 2013||Applied Materials, Inc.||Loadlock batch ozone cure|
|US8536073||11 Jul 2012||17 Sep 2013||Novellus Systems, Inc.||Hardmask materials|
|US8551891||20 Jun 2012||8 Oct 2013||Applied Materials, Inc.||Remote plasma burn-in|
|US8563445||10 Feb 2011||22 Oct 2013||Applied Materials, Inc.||Conformal layers by radical-component CVD|
|US8617989||19 Abr 2012||31 Dic 2013||Applied Materials, Inc.||Liner property improvement|
|US8629067||16 Dic 2010||14 Ene 2014||Applied Materials, Inc.||Dielectric film growth with radicals produced using flexible nitrogen/hydrogen ratio|
|US8629068||3 May 2013||14 Ene 2014||Novellus Systems, Inc.||Multi-station sequential curing of dielectric films|
|US8647992||21 Dic 2010||11 Feb 2014||Applied Materials, Inc.||Flowable dielectric using oxide liner|
|US8664127||14 Jul 2011||4 Mar 2014||Applied Materials, Inc.||Two silicon-containing precursors for gapfill enhancing dielectric liner|
|US8679982||18 Abr 2012||25 Mar 2014||Applied Materials, Inc.||Selective suppression of dry-etch rate of materials containing both silicon and oxygen|
|US8679983||18 Abr 2012||25 Mar 2014||Applied Materials, Inc.||Selective suppression of dry-etch rate of materials containing both silicon and nitrogen|
|US8715788||17 Oct 2011||6 May 2014||Novellus Systems, Inc.||Method to improve mechanical strength of low-K dielectric film using modulated UV exposure|
|US8716154||3 Oct 2011||6 May 2014||Applied Materials, Inc.||Reduced pattern loading using silicon oxide multi-layers|
|US8734663||17 Jul 2013||27 May 2014||Novellus Systems, Inc.||Purging of porogen from UV cure chamber|
|US8741778||3 Ago 2011||3 Jun 2014||Applied Materials, Inc.||Uniform dry etch in two stages|
|US8741788||21 Jul 2010||3 Jun 2014||Applied Materials, Inc.||Formation of silicon oxide using non-carbon flowable CVD processes|
|US8765574||15 Mar 2013||1 Jul 2014||Applied Materials, Inc.||Dry etch process|
|US8771536||24 Oct 2011||8 Jul 2014||Applied Materials, Inc.||Dry-etch for silicon-and-carbon-containing films|
|US8771539||14 Sep 2011||8 Jul 2014||Applied Materials, Inc.||Remotely-excited fluorine and water vapor etch|
|US8801952||3 Jun 2013||12 Ago 2014||Applied Materials, Inc.||Conformal oxide dry etch|
|US8808563||4 Abr 2012||19 Ago 2014||Applied Materials, Inc.||Selective etch of silicon by way of metastable hydrogen termination|
|US8889233||6 Mar 2006||18 Nov 2014||Novellus Systems, Inc.||Method for reducing stress in porous dielectric films|
|US8895449||14 Ago 2013||25 Nov 2014||Applied Materials, Inc.||Delicate dry clean|
|US8921234||8 Mar 2013||30 Dic 2014||Applied Materials, Inc.||Selective titanium nitride etching|
|US8927390||21 Sep 2012||6 Ene 2015||Applied Materials, Inc.||Intrench profile|
|US8951429||20 Dic 2013||10 Feb 2015||Applied Materials, Inc.||Tungsten oxide processing|
|US8956980||25 Nov 2013||17 Feb 2015||Applied Materials, Inc.||Selective etch of silicon nitride|
|US8969212||15 Mar 2013||3 Mar 2015||Applied Materials, Inc.||Dry-etch selectivity|
|US8975152||5 Nov 2012||10 Mar 2015||Applied Materials, Inc.||Methods of reducing substrate dislocation during gapfill processing|
|US8980382||15 Jul 2010||17 Mar 2015||Applied Materials, Inc.||Oxygen-doping for non-carbon radical-component CVD films|
|US8980763||15 Mar 2013||17 Mar 2015||Applied Materials, Inc.||Dry-etch for selective tungsten removal|
|US8980769||25 Oct 2007||17 Mar 2015||Novellus Systems, Inc.||Multi-station sequential curing of dielectric films|
|US8999856||9 Mar 2012||7 Abr 2015||Applied Materials, Inc.||Methods for etch of sin films|
|US9012302||11 Sep 2014||21 Abr 2015||Applied Materials, Inc.||Intrench profile|
|US9018108||15 Mar 2013||28 Abr 2015||Applied Materials, Inc.||Low shrinkage dielectric films|
|US9023732||7 Abr 2014||5 May 2015||Applied Materials, Inc.||Processing systems and methods for halide scavenging|
|US9023734||15 Mar 2013||5 May 2015||Applied Materials, Inc.||Radical-component oxide etch|
|US9034770||15 Mar 2013||19 May 2015||Applied Materials, Inc.||Differential silicon oxide etch|
|US9040422||3 Jun 2013||26 May 2015||Applied Materials, Inc.||Selective titanium nitride removal|
|US9050623||12 Sep 2008||9 Jun 2015||Novellus Systems, Inc.||Progressive UV cure|
|US9064815||9 Mar 2012||23 Jun 2015||Applied Materials, Inc.||Methods for etch of metal and metal-oxide films|
|US9064816||15 Mar 2013||23 Jun 2015||Applied Materials, Inc.||Dry-etch for selective oxidation removal|
|US9093371||7 Abr 2014||28 Jul 2015||Applied Materials, Inc.||Processing systems and methods for halide scavenging|
|US9093390||25 Jun 2014||28 Jul 2015||Applied Materials, Inc.||Conformal oxide dry etch|
|US9111877||8 Mar 2013||18 Ago 2015||Applied Materials, Inc.||Non-local plasma oxide etch|
|US9114438||21 Ago 2013||25 Ago 2015||Applied Materials, Inc.||Copper residue chamber clean|
|US9117855||31 Mar 2014||25 Ago 2015||Applied Materials, Inc.||Polarity control for remote plasma|
|US9132436||13 Mar 2013||15 Sep 2015||Applied Materials, Inc.||Chemical control features in wafer process equipment|
|US9136273||21 Mar 2014||15 Sep 2015||Applied Materials, Inc.||Flash gate air gap|
|US9153442||8 Abr 2014||6 Oct 2015||Applied Materials, Inc.||Processing systems and methods for halide scavenging|
|US9159606||31 Jul 2014||13 Oct 2015||Applied Materials, Inc.||Metal air gap|
|US9165786||5 Ago 2014||20 Oct 2015||Applied Materials, Inc.||Integrated oxide and nitride recess for better channel contact in 3D architectures|
|US9184055||7 Abr 2014||10 Nov 2015||Applied Materials, Inc.||Processing systems and methods for halide scavenging|
|US9190293||17 Mar 2014||17 Nov 2015||Applied Materials, Inc.||Even tungsten etch for high aspect ratio trenches|
|US9209012||8 Sep 2014||8 Dic 2015||Applied Materials, Inc.||Selective etch of silicon nitride|
|US9236265||5 May 2014||12 Ene 2016||Applied Materials, Inc.||Silicon germanium processing|
|US9236266||27 May 2014||12 Ene 2016||Applied Materials, Inc.||Dry-etch for silicon-and-carbon-containing films|
|US9245762||12 May 2014||26 Ene 2016||Applied Materials, Inc.||Procedure for etch rate consistency|
|US9263278||31 Mar 2014||16 Feb 2016||Applied Materials, Inc.||Dopant etch selectivity control|
|US9269590||7 Abr 2014||23 Feb 2016||Applied Materials, Inc.||Spacer formation|
|US9285168||28 Sep 2011||15 Mar 2016||Applied Materials, Inc.||Module for ozone cure and post-cure moisture treatment|
|US9287095||17 Dic 2013||15 Mar 2016||Applied Materials, Inc.||Semiconductor system assemblies and methods of operation|
|US9287134||17 Ene 2014||15 Mar 2016||Applied Materials, Inc.||Titanium oxide etch|
|US9293568||27 Ene 2014||22 Mar 2016||Applied Materials, Inc.||Method of fin patterning|
|US9299537||20 Mar 2014||29 Mar 2016||Applied Materials, Inc.||Radial waveguide systems and methods for post-match control of microwaves|
|US9299538||20 Mar 2014||29 Mar 2016||Applied Materials, Inc.||Radial waveguide systems and methods for post-match control of microwaves|
|US9299575||17 Mar 2014||29 Mar 2016||Applied Materials, Inc.||Gas-phase tungsten etch|
|US9299582||13 Oct 2014||29 Mar 2016||Applied Materials, Inc.||Selective etch for metal-containing materials|
|US9299583||5 Dic 2014||29 Mar 2016||Applied Materials, Inc.||Aluminum oxide selective etch|
|US9309598||28 May 2014||12 Abr 2016||Applied Materials, Inc.||Oxide and metal removal|
|US9324576||18 Abr 2011||26 Abr 2016||Applied Materials, Inc.||Selective etch for silicon films|
|US9337068||12 Dic 2013||10 May 2016||Lam Research Corporation||Oxygen-containing ceramic hard masks and associated wet-cleans|
|US9343272||8 Ene 2015||17 May 2016||Applied Materials, Inc.||Self-aligned process|
|US9349605||7 Ago 2015||24 May 2016||Applied Materials, Inc.||Oxide etch selectivity systems and methods|
|US9355856||12 Sep 2014||31 May 2016||Applied Materials, Inc.||V trench dry etch|
|US9355862||17 Nov 2014||31 May 2016||Applied Materials, Inc.||Fluorine-based hardmask removal|
|US9355863||17 Ago 2015||31 May 2016||Applied Materials, Inc.||Non-local plasma oxide etch|
|US9362130||21 Feb 2014||7 Jun 2016||Applied Materials, Inc.||Enhanced etching processes using remote plasma sources|
|US9368364||10 Dic 2014||14 Jun 2016||Applied Materials, Inc.||Silicon etch process with tunable selectivity to SiO2 and other materials|
|US9373517||14 Mar 2013||21 Jun 2016||Applied Materials, Inc.||Semiconductor processing with DC assisted RF power for improved control|
|US9373522||22 Ene 2015||21 Jun 2016||Applied Mateials, Inc.||Titanium nitride removal|
|US9378969||19 Jun 2014||28 Jun 2016||Applied Materials, Inc.||Low temperature gas-phase carbon removal|
|US9378978||31 Jul 2014||28 Jun 2016||Applied Materials, Inc.||Integrated oxide recess and floating gate fin trimming|
|US9384959||24 Abr 2014||5 Jul 2016||Novellus Systems, Inc.||Purging of porogen from UV cure chamber|
|US9384997||22 Ene 2015||5 Jul 2016||Applied Materials, Inc.||Dry-etch selectivity|
|US9385028||3 Feb 2014||5 Jul 2016||Applied Materials, Inc.||Air gap process|
|US9390937||15 Mar 2013||12 Jul 2016||Applied Materials, Inc.||Silicon-carbon-nitride selective etch|
|US9396989||27 Ene 2014||19 Jul 2016||Applied Materials, Inc.||Air gaps between copper lines|
|US9404178||12 Jun 2012||2 Ago 2016||Applied Materials, Inc.||Surface treatment and deposition for reduced outgassing|
|US9406523||19 Jun 2014||2 Ago 2016||Applied Materials, Inc.||Highly selective doped oxide removal method|
|US9412608||9 Feb 2015||9 Ago 2016||Applied Materials, Inc.||Dry-etch for selective tungsten removal|
|US9418858||25 Jun 2014||16 Ago 2016||Applied Materials, Inc.||Selective etch of silicon by way of metastable hydrogen termination|
|US9425058||24 Jul 2014||23 Ago 2016||Applied Materials, Inc.||Simplified litho-etch-litho-etch process|
|US20030159656 *||25 Mar 2003||28 Ago 2003||Applied Materials, Inc.||Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD|
|US20030203637 *||30 Abr 2002||30 Oct 2003||Applied Materials, Inc.||Method for high aspect ratio HDP CVD gapfill|
|US20030207580 *||3 May 2002||6 Nov 2003||Applied Materials, Inc.||HDP-CVD dep/etch/dep process for improved deposition into high aspect ratio features|
|US20040079632 *||23 Oct 2002||29 Abr 2004||Applied Materials, Inc.||High density plasma CVD process for gapfill into high aspect ratio features|
|US20040079728 *||12 Sep 2003||29 Abr 2004||Applied Materials, Inc.||Reactive ion etching for semiconductor device feature topography modification|
|US20040115898 *||13 Dic 2002||17 Jun 2004||Applied Materials, Inc.||Deposition process for high aspect ratio trenches|
|US20040146661 *||23 Ene 2003||29 Jul 2004||Applied Materials, Inc.||Hydrogen assisted hdp-cvd deposition process for aggressive gap-fill technology|
|US20040224090 *||9 May 2003||11 Nov 2004||Applied Materials, Inc.||HDP-CVD uniformity control|
|US20040241342 *||27 May 2003||2 Dic 2004||Applied Materials, Inc.||Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generation|
|US20040245091 *||4 Jun 2003||9 Dic 2004||Applied Materials, Inc.||Hdp-cvd multistep gapfill process|
|US20040251236 *||23 May 2003||16 Dic 2004||Applied Materials, Inc.||[deposition-selective etch-deposition process for dielectric film gapfill]|
|US20050008790 *||10 Ago 2004||13 Ene 2005||Applied Materials, Inc.||Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology|
|US20050009291 *||11 Jul 2003||13 Ene 2005||Jingyi Bai||Methods for filling high aspect ratio trenches in semiconductor layers|
|US20050019494 *||25 Jul 2003||27 Ene 2005||Applied Materials, Inc., A Delaware Corporation||Sequential gas flow oxide deposition technique|
|US20050048801 *||3 Sep 2003||3 Mar 2005||Applied Materials, Inc.||In-situ-etch-assisted HDP deposition using SiF4 and hydrogen|
|US20050074946 *||2 Oct 2003||7 Abr 2005||Hsiu-Chuan Chu||[silicon oxide gap-filling process]|
|US20050079715 *||1 Oct 2004||14 Abr 2005||Applied Materials, Inc.||Method for high aspect ratio HDP CVD gapfill|
|US20050158965 *||31 Ene 2005||21 Jul 2005||Jingyi Bai||Methods for filling high aspect ratio trenches in semiconductor layers|
|US20050164517 *||25 Mar 2005||28 Jul 2005||Applied Materials, Inc.||In-situ-etch-assisted HDP deposition using SiF4|
|US20050196929 *||4 Mar 2004||8 Sep 2005||Applied Materials, Inc., A Delaware Corporation||Low-thermal-budget gapfill process|
|US20050260356 *||18 May 2004||24 Nov 2005||Applied Materials, Inc.||Microcontamination abatement in semiconductor processing|
|US20050277265 *||9 Jun 2005||15 Dic 2005||Yong-Won Cha||Methods of forming trench isolation layers using high density plasma chemical vapor deposition|
|US20050282398 *||16 Jun 2004||22 Dic 2005||Applied Materials, Inc., A Delaware Corporation||Oxygen plasma treatment for enhanced HDP-CVD gapfill|
|US20060046508 *||1 Sep 2004||2 Mar 2006||Applied Materials, Inc. A Delaware Corporation||Silicon oxide gapfill deposition using liquid precursors|
|US20060154494 *||8 Ene 2005||13 Jul 2006||Applied Materials, Inc., A Delaware Corporation||High-throughput HDP-CVD processes for advanced gapfill applications|
|US20060156934 *||20 Mar 2006||20 Jul 2006||Gallus Druckmaschinen Ag||Rotary printing press|
|US20060166515 *||24 Mar 2006||27 Jul 2006||Applied Materials, Inc.||In-situ-etch-assisted HDP deposition|
|US20060225648 *||5 Jun 2006||12 Oct 2006||Applied Materials, Inc.||Use of enhanced turbomolecular pump for gapfill deposition using high flows of low-mass fluent gas|
|US20060228886 *||5 Jun 2006||12 Oct 2006||Applied Materials, Inc.||Deposition-selective etch-deposition process for dielectric film gapfill|
|US20060286764 *||5 Jun 2006||21 Dic 2006||Applied Materials, Inc.||Deposition-selective etch-deposition process for dielectric film gapfill|
|US20060292894 *||24 Jun 2005||28 Dic 2006||Applied Materials, Inc.,||Gapfill using deposition-etch sequence|
|US20070128865 *||5 Dic 2006||7 Jun 2007||Kabushiki Kaisha Toshiba||Method of forming insulating film, method of manufacturing semiconductor device and their controlling computer program|
|US20070277734 *||29 May 2007||6 Dic 2007||Applied Materials, Inc.||Process chamber for dielectric gapfill|
|US20070281448 *||25 May 2007||6 Dic 2007||Applied Materials, Inc.||Novel deposition-plasma cure cycle process to enhance film quality of silicon dioxide|
|US20070281496 *||29 May 2007||6 Dic 2007||Applied Materials, Inc.||Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen|
|US20080026597 *||25 May 2007||31 Ene 2008||Applied Materials, Inc.||Method for depositing and curing low-k films for gapfill and conformal film applications|
|US20080142483 *||29 Nov 2007||19 Jun 2008||Applied Materials, Inc.||Multi-step dep-etch-dep high density plasma chemical vapor deposition processes for dielectric gapfills|
|US20080182382 *||29 Nov 2007||31 Jul 2008||Applied Materials, Inc.||Methods of thin film process|
|US20080206956 *||30 Nov 2007||28 Ago 2008||Taketo Matsuda||Semiconductor device fabrication method|
|US20090061647 *||27 Ago 2007||5 Mar 2009||Applied Materials, Inc.||Curing methods for silicon dioxide thin films deposited from alkoxysilane precursor with harp ii process|
|US20090104755 *||22 Oct 2007||23 Abr 2009||Applied Materials, Inc.||High quality silicon oxide films by remote plasma cvd from disilane precursors|
|US20090104790 *||22 Oct 2007||23 Abr 2009||Applied Materials, Inc.||Methods for Forming a Dielectric Layer Within Trenches|
|US20090104791 *||22 Oct 2007||23 Abr 2009||Applied Materials, Inc. A Delaware Corporation||Methods for Forming a Silicon Oxide Layer Over a Substrate|
|US20090163041 *||21 Dic 2007||25 Jun 2009||Applied Materials, Inc.||Low wet etch rate silicon nitride film|
|US20090239390 *||5 Jun 2009||24 Sep 2009||Novellus Systems, Inc.||Methods for producing low stress porous and cdo low-k dielectric materials using precursors with organic functional groups|
|US20090286381 *||16 May 2008||19 Nov 2009||Novellus Systems Inc.||Protective Layer To Enable Damage Free Gap Fill|
|US20100159711 *||22 Jun 2009||24 Jun 2010||Applied Materials, Inc.||Precursor addition to silicon oxide cvd for improved low temperature gapfill|
|US20110034035 *||10 Feb 2011||Applied Materials, Inc.||Stress management for tensile films|
|US20110117678 *||19 May 2011||Varadarajan Bhadri N||Carbon containing low-k dielectric constant recovery using uv treatment|
|US20110151676 *||23 Jun 2011||Applied Materials, Inc.||Methods of thin film process|
|US20150206803 *||19 Ene 2014||23 Jul 2015||United Microelectronics Corp.||Method of forming inter-level dielectric layer|
|CN1913122B||14 Ago 2006||11 Abr 2012||东部电子株式会社||Method for forming void-free trench isolation layer|
|CN100499031C||30 Oct 2003||10 Jun 2009||上海集成电路研发中心有限公司;上海华虹（集团）有限公司||Technique for filling in dielectric layer between metalic wires|
|CN100501940C||27 Abr 2005||17 Jun 2009||应用材料股份有限公司||Microcontamination abatement method in semiconductor processing|
|WO2005117088A1 *||27 Abr 2005||8 Dic 2005||Applied Materials, Inc.||Microcontamination abatement in semiconductor processing|
|WO2010080216A2 *||19 Nov 2009||15 Jul 2010||Applied Materials, Inc.||Precursor addition to silicon oxide cvd for improved low temperature gapfill|
|WO2010080216A3 *||19 Nov 2009||26 Ago 2010||Applied Materials, Inc.||Precursor addition to silicon oxide cvd for improved low temperature gapfill|
|Clasificación de EE.UU.||438/788, 257/E21.278, 257/E21.546, 438/792, 438/778, 438/790, 438/791, 257/E21.275, 257/E21.269, 257/E21.268, 257/E21.276, 438/786, 438/787|
|Clasificación internacional||C23C16/04, H01L21/316, C23C16/40, H01L21/762, H01L21/314|
|Clasificación cooperativa||H01L21/02131, H01L21/76224, H01L21/3145, H01J2237/3327, H01L21/3144, H01L21/0214, C23C16/045, C23C16/402, H01L21/02129, H01L21/31629, H01L21/31625, H01L21/31608, H01L21/02164, H01L21/02274|
|Clasificación europea||H01L21/02K2C1L1P, H01L21/02K2C1L1F, H01L21/02K2C1L1B, H01L21/02K2E3B6B, H01L21/02K2C1L5, C23C16/04D, H01L21/762C, H01L21/314B1, C23C16/40B2, H01L21/316B4, H01L21/316B2, H01L21/314B2, H01L21/316B6|
|28 Nov 2001||AS||Assignment|
Owner name: NOVELLUS SYSTEMS, INC., CALIFORNIA
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BAYMAN, ATIYE;RAHMAN, MD SAZZADUR;ZHANG, WEIJIE;AND OTHERS;REEL/FRAME:012340/0893;SIGNING DATES FROM 20011108 TO 20011116
|28 Oct 2003||CC||Certificate of correction|
|22 Ene 2007||FPAY||Fee payment|
Year of fee payment: 4
|24 Ene 2011||FPAY||Fee payment|
Year of fee payment: 8
|22 Ene 2015||FPAY||Fee payment|
Year of fee payment: 12