US6759266B1 - Quick sealing glass-lidded package fabrication method - Google Patents
Quick sealing glass-lidded package fabrication method Download PDFInfo
- Publication number
- US6759266B1 US6759266B1 US09/946,861 US94686101A US6759266B1 US 6759266 B1 US6759266 B1 US 6759266B1 US 94686101 A US94686101 A US 94686101A US 6759266 B1 US6759266 B1 US 6759266B1
- Authority
- US
- United States
- Prior art keywords
- lid
- curable material
- substrate
- optically
- optically curable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime, expires
Links
- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title abstract description 22
- 238000007789 sealing Methods 0.000 title description 2
- 239000000463 material Substances 0.000 claims abstract description 155
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 230000005855 radiation Effects 0.000 claims abstract description 31
- 230000005670 electromagnetic radiation Effects 0.000 claims description 48
- 239000000853 adhesive Substances 0.000 claims description 37
- 230000001070 adhesive effect Effects 0.000 claims description 37
- 239000008393 encapsulating agent Substances 0.000 claims description 34
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 abstract description 16
- 238000010586 diagram Methods 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 230000037361 pathway Effects 0.000 description 4
- 239000000565 sealant Substances 0.000 description 4
- 239000000428 dust Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000011345 viscous material Substances 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002991 molded plastic Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15172—Fan-out arrangement of the internal vias
- H01L2924/15173—Fan-out arrangement of the internal vias in a single layer of the multilayer substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Definitions
- the present invention relates generally to the packaging of electronic components. More particularly, the present invention;relates to a method for fabricating an electronic component package.
- Image sensors are well known to those of skill in the art.
- An image sensor included an active area, which was responsive to electromagnetic radiation.
- the image sensor was incorporated into an image sensor package, which protected the image sensor from dust and moisture.
- the image sensor was located within an enclosure, which included a window. Electromagnetic radiation passed through the window and struck the active area of the image sensor, which responded to the electromagnetic radiation. The enclosure also served to protect the image sensor from dust and moisture. Although the enclosure around the image sensor was reliable and effective, fabrication of the enclosure was relatively complex, time-consuming, and thus expensive.
- a method of forming an image sensor package includes coupling an image sensor, i.e., an electronic component, to a substrate. Bond pads of the image sensor are electrically coupled to interior traces on the substrate with bond wires. A first optically curable material is applied to enclose the bond wires. A second optically curable material is applied between a lid and the substrate. The first and second optically curable materials are cured with a first electromagnetic radiation such as ultraviolet radiation. The substrate, lid, and cured second optically curable material form a low cost enclosure around the image sensor.
- the first and second optically curable materials are optically entirely curable materials.
- the first and second optically curable materials are cured immediately as a result of being irradiated with the first electromagnetic radiation. More particularly, the first and second optically curable materials are entirely cured while being irradiated with the first at electromagnetic radiation.
- the first and second optically curable materials are optically activated materials.
- the first and second optically curable materials cure over a period of time as a result of being irradiated with the first electromagnetic radiation. More particularly, the first and second optically curable materials cure initiate while being irradiated with the first electromagnetic radiation and then entirely cure over a period of time without further irradiation.
- the first and second optically curable materials after being cure initiated, entirely cure at room temperature, i.e., without heating.
- the first and second optically curable materials entirely cure at elevated temperature, e.g., are heated to reduce the curing time.
- the first and second optically curable materials are cured rapidly, e.g., in a matter of seconds. This is in stark contrast to conventional thermally curable materials, which often had a cure time of several hours.
- the time required to fabricate the image sensor package is minimized. This, in turn, minimizes the fabrication cost of the image sensor package.
- the first and second optically curable materials are cured without heating the image sensor package to any appreciable extent. This is in stark contrast to conventional thermally curable materials, which required heating for several hours.
- first and second optically curable materials are well suited for applications in which it is important to keep the image sensor and any other temperature sensitive components of the image sensor package at low temperature, for example, to prevent degradation or damage to any color filters and/or other temperature sensitive materials of the image sensor.
- first and second optically curable materials are cured without heating, the requirement for cure ovens, which were necessary to cure conventional thermally curable materials, is eliminated further minimizing the fabrication cost of the image sensor package.
- an image sensor package includes a substrate and an image sensor coupled to the substrate.
- An interior trace is coupled to the substrate.
- a bond wire electrically couples a bond pad of the image sensor to the interior trace.
- An encapsulant encloses the bond wire, the encapsulant being formed of a first optically curable material that has been cured.
- the image sensor package further includes a lid.
- a lid adhesive couples the lid to the substrate, the lid adhesive being formed of a second optically curable material that has been cured.
- FIG. 1 is a cross-sectional view of an image sensor package in accordance with one embodiment of the present invention.
- FIG. 2 is a block diagram illustrating operations in a process for manufacturing the image sensor package of FIG. 1 in accordance with one embodiment of the present invention.
- FIG. 3 is a cross-sectional view of the image sensor package of FIG. 1 during fabrication in accordance with one embodiment of the present invention.
- FIGS. 4 and 5 are cross-sectional views of the image sensor package of FIG. 3 at later stages during fabrication in accordance with various embodiments of the present invention.
- FIG. 6 is a block diagram illustrating operations in a process-for manufacturing the image sensor package of FIG. 1 in accordance with another embodiment of the present invention.
- FIG. 7 is a block diagram illustrating operations in a process for manufacturing the image sensor package of FIG. 1 in accordance with yet another embodiment of the present invention.
- a first optically curable material 402 (FIG. 5) is applied to enclose bond wires 118 .
- a second optically curable material 502 is applied between a lid 130 and a substrate 102 .
- First and second optically curable materials 402 , 502 are cured through lid 130 with an ultraviolet radiation 504 .
- first and second optically curable materials 402 , 502 are optically entirely curable materials.
- first and second optically curable materials 402 , 502 are cured immediately as a result of being irradiated with ultraviolet radiation 504 . More particularly, first and second optically curable materials 402 , 502 are entirely cured while being irradiated with ultraviolet radiation 504 .
- first and second optically curable materials 402 , 502 are optically activated materials.
- first and second optically curable materials 402 , 502 cure over a period of time as a result of being irradiated with ultraviolet radiation 504 . More particularly, first and second optically curable materials 402 , 502 cure initiate while being irradiated with ultraviolet radiation 504 and then entirely cure over a period of time without further irradiation.
- first and second optically curable materials 402 , 502 After being cure initiated, first and second optically curable materials 402 , 502 entirely cure at room temperature, i.e., without heating. Alternatively, after being cure initiated, first and second optically curable materials 402 , 502 entirely cure at elevated temperature, e.g., are heated to reduce the curing time.
- first and second optically curable materials 402 , 502 are cured rapidly, e.g., in a matter of seconds. This is in stark contrast to conventional thermally curable materials, which often had a cure time of several hours.
- first and second optically curable materials 402 , 502 are cured rapidly, e.g., in a matter of seconds. This is in stark contrast to conventional thermally curable materials, which often had a cure time of several hours.
- first and second optically curable materials 402 , 502 are cured without heating image sensor package 100 to any appreciable extent. This is in stark contrast to conventional thermally curable materials, which required heating for several hours.
- first and second optically curable materials 402 , 502 is well suited for applications in which it is important to keep an image sensor 108 and any other temperature sensitive components of image sensor package 100 at low temperature, for example, to prevent degradation or damage to any color filters and/or other temperature sensitive materials of image sensor 108 .
- first and second optically curable materials 402 , 502 are cured without heating, the requirement for cure ovens, which were necessary to cure conventional thermally curable materials, is eliminated further minimizing the fabrication cost of image sensor package 100 .
- FIG. 1 is a cross-sectional view of an image sensor package 100 in accordance with one embodiment of the present invention.
- Image sensor package 100 is used in a wide variety of applications, e.g., cameras and cellular telephones.
- Image sensor package 100 includes a substrate 102 , e.g., formed of ceramic, pre-molded plastic on leadframe or laminate.
- Substrate 102 is a rectangular cup shape enclosure and includes a base 104 and a sidewall 106 .
- Sidewall 106 is formed around a periphery of base 104 and extended upwards, e.g., in a first direction, from base 104 .
- base 104 and sidewall 106 are integral, i.e., are a single piece and not a plurality of separate pieces connected together.
- Base 104 includes an interior, e.g., first, surface 104 I and an exterior, e.g., second, surface 104 E.
- Interior surface 104 I Mounted, sometimes called die attached, to interior surface 104 I is an image sensor 108 , sometimes called an electronic component. More particularly, a lower, e.g., first, surface 108 L of image sensor 108 is mounted to interior surface 104 I with an adhesive 110 , sometimes called a die attach adhesive.
- Image sensor 108 further includes an upper, e.g., second, surface 108 U.
- An active area 112 and bond pads 114 of image sensor 108 are on upper surface 108 U.
- bond pads 114 are illustrated as being on both sides of image sensor 108 , in alternative embodiments, bond pads 114 are formed only along a single side of image sensor 108 .
- interior surface 104 I, lower surface 108 L, and upper surface 108 U are parallel to one another.
- active area 112 of image sensor 108 is responsive to electromagnetic radiation, as is well known to those of skill in the art.
- active area 112 is responsive to infrared radiation, ultraviolet radiation, and/or visible light.
- image sensor 108 is a CMOS image sensor device, a charge coupled device (CCD), a pyroelectric device, or an erasable programmable read-only memory device (EPROM) although other image sensors are used in other embodiments.
- interior surface 104 I of substrate 102 Formed on interior surface 104 I of substrate 102 are a plurality of electrically conductive interior traces 116 , which include a first interior trace 116 A. Interior traces 116 are electrically connected to bond pads 114 by bond wires 118 . To illustrate, a first bond pad 114 A of the plurality of bond pads 114 is electrically connected to interior trace 116 A by a first bond wire 118 A of the plurality of bond wires 118 .
- Bond wires 118 are enclosed within an encapsulant 119 .
- Encapsulant 119 also encloses bond pads 114 and at least a portion of interior traces 116 in this embodiment.
- Encapsulant 119 protects bond wires 118 , e.g., from shorting and moisture.
- Encapsulant 119 also contacts the periphery of upper surface 108 U of image sensor 108 . However, encapsulant 119 does not cover and leaves exposed active area 112 .
- encapsulant 119 is a cured optically curable material, e.g., is a cured optically curable sealant, adhesive, or encapsulant.
- an optically curable material (1) is a viscous material, i.e., a material that has the ability to flow and/or wet; and (2) cures, i.e., sets-up, gels, solidifies or otherwise changes, as a result of being irradiated with a particular electromagnetic radiation, i.e., electromagnetic radiation having a particular wavelength or being within a particular range of wavelengths such as, for example, ultraviolet radiation.
- optically curable materials examples include optically entirely curable materials and optically activated materials.
- An optically entirely curable material cures immediately as a result of being irradiated with a particular electromagnetic radiation. More particularly, an optically entirely curable material entirely cures while being irradiated with a particular electromagnetic radiation.
- an optically activated material cures over a period of time as a result of being irradiated with a particular electromagnetic radiation. More particularly, an optically activated material cure initiates while being irradiated with a particular electromagnetic radiation and then entirely cures over a period of time without further irradiation.
- cure initiates means that a chemical reaction that causes the optically activated material to become cured is initiated. After being cure initiated, optically activated materials entirely cure at room temperature, i.e., without heating. Alternatively, after being cure initiated, optically activated materials entirely cure at elevated temperature, e.g., are heated to reduce the curing time.
- encapsulant 119 is an optically curable material that that has been cured as a result of being irradiated with ultraviolet radiation (UV), sometimes called a cured UV curable material.
- UV ultraviolet radiation
- encapsulant 119 is a cured thermally curable material, e.g., is a sealant, adhesive, or encapsulant that has been cured by heating.
- a thermally curable material is a viscous material that cures upon being heated.
- encapsulant 119 is not formed.
- Exterior surface 104 E of substrate 102 Formed on exterior surface 104 E of substrate 102 are a plurality of electrically conductive exterior traces 120 , which include a first exterior trace 120 A. Extending through base 104 from exterior surface 104 E to interior surface 104 I are a plurality of electrically conductive vias 122 , which include a first via 122 A. Exterior traces 120 are electrically connected to interior traces 116 by vias 122 . To illustrate, exterior trace 120 A is electrically connected to interior trace 116 A by via 122 A.
- Formed on exterior traces 120 are electrically conductive pads 124 , which include a first pad 124 A.
- Formed on pads 124 are electrically conductive interconnection balls 126 , e.g., solder.
- pad 124 A is formed on exterior trace 120 A.
- a first interconnection ball 126 A of the plurality of interconnection balls 126 is formed on pad 124 A.
- Interconnection balls 126 are used to connect image sensor package 100 to a larger substrate such as a printed circuit mother board.
- interior traces 116 and/or exterior traces 120 are covered with a dielectric protective layer, e.g., solder mask, as those of skill in the art will understand.
- a dielectric protective layer e.g., solder mask
- an electrically conductive pathway between bond pad 114 A and interconnection ball 126 A is formed by bond wire 118 A, interior trace 116 A, via 122 A, exterior trace 120 A, and pad 124 A.
- the other bond pads 114 , bond wires 118 , interior traces 116 , vias 122 , exterior traces 120 , pads 124 and interconnection balls 126 are electrically connected to one another in a similar fashion and so are not discussed further to avoid detracting from the principals of the invention.
- electrically conductive pathway between bond pad 114 A and interconnection ball 126 A is described above, other electrically conductive pathways can be formed.
- contact metallizations can be formed between the various electrical conductors, e.g., between bond pads 114 and bond wires 118 , between bond wires 118 and interior traces 116 , between exterior traces 120 and pads 124 , and/or between pads 124 and interconnection balls 126 .
- pads 124 are not formed and interconnection balls 126 are formed directly on exterior traces 120 .
- interconnection balls 126 are distributed in an array format to form a ball grid array (BGA) type package.
- BGA ball grid array
- interconnection balls 126 (or interconnection balls 126 and pads 124 ) are not formed, e.g., to form a metal land grid array (LGA) type package.
- LGA metal land grid array
- LCC leadless chip carrier
- Sidewall 106 of substrate 102 includes an interior surface 106 I and an exterior surface 106 E.
- interior surface 106 I is parallel to exterior surface 106 E.
- interior surface 106 I and exterior surface 106 E are perpendicular to interior surface 104 I and exterior surface 104 E, which are parallel to one another.
- various structures may be described as being parallel or perpendicular, it is understood that the structures may not be exactly parallel or perpendicular but only substantially parallel or perpendicular to within accepted manufacturing tolerances.
- Lid mounting surface 128 is parallel to interior surface 104 I and exterior surface 104 E of base 104 of substrate 102 .
- Lid mounting surface 128 is annular when viewed from above, e.g., is a rectangular annulus.
- lid 130 is planar, i.e., is a flat piece.
- Lid 130 includes an interior, e.g., first, surface 130 I and an exterior, e.g., second, surface 130 E.
- a side 130 S of lid 130 extends between interior surface 130 I and exterior surface 130 E. Exterior surface 130 E is exposed to the ambient environment.
- lid 130 as a flat piece is set forth above and illustrated in FIG. 1, in an alternative embodiment, lid 130 has a different shape, e.g., is curved, cap shaped or otherwise has a non-planar shape.
- Lid 130 is mounted to lid mounting surface 128 of substrate 102 by a lid adhesive 132 . More particularly, lid adhesive 132 bonds the periphery of interior surface 130 I of lid 130 adjacent side 130 S to mounting surface 128 of substrate 102 .
- lid adhesive 132 forms a seal between lid 130 and substrate 102 , which protects image sensor 108 from environmental degradation, e.g., from dust and moisture. More particularly, substrate 102 , lid 130 and lid adhesive 132 form an enclosure around image sensor 108 and protect image sensor 108 from the ambient environment.
- lid adhesive 132 is a cured optically curable material, e.g., is a cured optically curable sealant, adhesive, or encapsulant.
- lid adhesive 132 is an optically curable material that has been cured as a result of being irradiated with ultraviolet radiation, i.e., is a cured UV curable material.
- lid adhesive 132 is formed of the same type of optically curable material as encapsulant 119 .
- lid adhesive 132 is a cured thermally curable material, e.g., is a sealant, adhesive, or encapsulant that has been cured by heating.
- lid 130 is transparent to the electromagnetic radiation to which active area 112 of image sensor 108 is responsive.
- lid 130 is a glass window such as a borosilicate glass window although lid 130 is formed of other materials such as plastic in other embodiments.
- electromagnetic radiation is directed at image sensor package 100 including image sensor 108 .
- This electromagnetic radiation passes through lid 130 and strikes active area 112 , which responds to the electromagnetic radiation as is well known to those of skill in the art.
- active area 112 of image sensor 108 transmits electromagnetic radiation.
- image sensor 108 is a light emitting diode (LED) micro-display.
- electromagnetic radiation transmitted by active area 112 passes through lid 130 and emanates from image sensor package 100 .
- active area 112 as a receiver of electromagnetic radiation is set forth.
- active area 112 can be a receiver of electromagnetic radiation, a transmitter of electromagnetic radiation, or a transceiver, i.e., a transmitter and a receiver, of electromagnetic radiation.
- image sensor 108 is formed without active area 112 , i.e., image sensor 108 , referred to as electronic component 108 in accordance with this embodiment, is not an image sensor but is a non-optical electronic component such as a standard integrated circuit chip.
- encapsulant 119 and/or lid adhesive 132 are a first optically curable material and a second optically curable material, respectively, that have been cured as a result of being irradiated with a first electromagnetic radiation, such as, for example, ultraviolet radiation.
- a first electromagnetic radiation such as, for example, ultraviolet radiation.
- encapsulant 119 is a cured optically entirely curable material or a cured optically activated material.
- lid adhesive 132 is a cured optically entirely curable material or a cured optically activated material.
- lid 130 is transparent to the first electromagnetic radiation, e.g., ultraviolet radiation.
- first electromagnetic radiation e.g., ultraviolet radiation.
- encapsulant 119 and lid adhesive 132 are cured through lid 130 with the first electromagnetic radiation, i.e., are cured by passing the first electromagnetic radiation through lid 130 .
- encapsulant 119 and lid adhesive 132 are optically curable materials that have been cured with ultraviolet radiation, e.g., a first electromagnetic radiation.
- active area 112 is responsive to visible light, i.e., a second electromagnetic radiation.
- Lid 130 is transparent to both the first and second electromagnetic radiation, i.e., is transparent to both ultraviolet radiation and visible light.
- FIG. 2 is a block diagram 200 illustrating operations in a process for manufacturing image sensor package 100 of FIG. 1 in accordance with one embodiment of the present invention.
- FIG. 3 is a cross-sectional view of image sensor package 100 of FIG. 1 during fabrication in accordance with one embodiment of the present invention.
- substrate 102 including interior traces 116 , vias 122 , exterior traces 120 , pads 124 and interconnection balls 126 are formed.
- Substrate 102 is formed using any one of a number of techniques and the particular technique used to form substrate 102 is not essential to the present invention.
- lower surface 108 L of image sensor 108 is attached to interior surface 104 I of base 104 of substrate 102 by adhesive 110 .
- bond pads 114 of image sensor 108 are electrically connected to interior traces 116 by bond wires 118 using a wirebonding tool.
- bond pad 114 A is electrically connected to interior trace 116 A by bond wire 118 A.
- the other bond pads 114 are electrically connected to the other interior traces 116 by the other bond wires 118 in a similar manner.
- FIG. 4 is a cross-sectional view of image sensor package 100 of FIG. 3 at a later stage during fabrication in accordance with one embodiment of the present invention.
- a first optically curable material 402 is applied to enclose bond pads 114 , bond wires 118 and at least a portion of interior traces 116 .
- first optically curable material 402 is an optically entirely curable material or an optically activated material.
- First optically curable material 402 is applied, for example, with a needle dispenser.
- FIG. 5 is a cross-sectional view of image sensor package 100 of FIG. 4 at a later stage during fabrication in accordance with one embodiment of the present invention.
- a second optically curable material 502 is applied to lid mounting surface 128 of substrate 102 or, alternatively, to the periphery of interior surface 130 I of lid 130 .
- second optically curable material 502 is an optically entirely curable material or an optically activated material.
- lid 130 is aligned with substrate 102 , e.g., with a mechanical or optical alignment system. More particularly, the periphery of interior surface 130 I of lid 130 is aligned with lid mounting surface 128 . Lid 130 is moved downwards to place lid 130 on substrate 102 such that second optically curable material 502 is squeezed between substrate 102 and lid 130 . As a result, second optically curable material 502 is applied between lid 130 and substrate 102 .
- first optically curable material 402 and second optically curable material 502 are cured with a first electromagnetic radiation 504 , e.g., ultraviolet radiation, hereinafter referred to ultraviolet radiation 504 for simplicity of discussion.
- a first electromagnetic radiation 504 e.g., ultraviolet radiation
- image sensor package 100 is irradiated with ultraviolet radiation 504 .
- Ultraviolet radiation 504 passes through lid 130 , which is transparent to ultraviolet radiation 504 .
- ultraviolet radiation 504 strikes first optically curable material 402 and second optically curable material 502 .
- first optically curable material 402 and second optically curable material 502 (FIG. 5) are cured to form encapsulant 119 and lid adhesive 132 (FIG. 1 ).
- first and/or second optically curable materials 402 , 502 are optically entirely curable materials.
- first and/or second optically curable materials 402 , 502 are cured immediately as a result of being irradiated with ultraviolet radiation 504 . More particularly, first and/or second optically curable materials 402 , 502 are entirely cured while being irradiated with ultraviolet radiation 504 .
- first and/or second optically curable materials 402 , 502 are optically activated materials.
- first and/or second optically curable materials 402 , 502 cure over a period of time as a result of being irradiated with ultraviolet radiation 504 . More particularly, first and/or second optically curable materials 402 , 502 cure initiate while being irradiated with ultraviolet radiation 504 and then entirely cure over a period of time without further irradiation.
- first and/or second optically curable materials 402 , 502 after being cure initiated, entirely cure at room temperature, i.e., without heating.
- first and/or second optically curable materials 402 , 502 are substantially cured in a few seconds during the cure initiate, i.e., while being irradiated with ultraviolet radiation 504 .
- first and/or second optically curable materials 402 , 502 finish curing, sometime called entirely cure, at room temperature, e.g., over a period of 120 minutes or more.
- first and/or second optically curable materials 402 , 502 are heated to finish curing, e.g., to reduce the curing time.
- first and second optically curable materials 402 , 502 are cured rapidly, e.g., in one to ten seconds. This is in stark contrast to conventional thermally curable materials, which often had a cure time of one to two hours.
- first and second optically curable materials 402 , 502 rapidly, the time required to fabricate image sensor package 100 is minimized. This, in turn, minimizes the fabrication cost of image sensor package 100 .
- first and second optically curable materials 402 , 502 are cured without heating. This is in stark contrast to conventional thermally curable materials, which required heating for several hours.
- first and second optically curable materials 402 , 502 is well suited for applications in which it is important to keep image sensor 108 and any other temperature sensitive components of image sensor package 100 at low temperature, for example, to prevent degradation or damage to any color filters and/or other temperature sensitive materials of image sensor 108 .
- first and second optically curable materials 402 , 502 are cured without heating, the requirement for cure ovens, which were necessary to cure conventional thermally curable materials, is eliminated further minimizing the fabrication cost of image sensor package 100 .
- interconnection balls 126 are formed after first optically curable material 402 and second optically curable material 502 are cured.
- FIG. 6 is a block diagram 600 illustrating operations in a process for manufacturing image sensor package 100 of FIG. 1 in accordance with another embodiment of the present invention.
- Block diagram 600 of FIG. 6 is similar to block diagram 200 of FIG. 2 and only the significant differences are discussed below.
- a thermally curable material 402 is applied to cover bond pads 114 , bond wires 118 and at least a portion of interior traces 116 .
- Thermally curable material 402 is applied, for example, with a needle dispenser.
- image sensor package 100 is heated to cure thermally curable material 402 to form encapsulant 119 (FIG. 1 ).
- Apply Adhesive Operation 210 and Place Window Operation 212 of FIG. 6 are similar or identical to Apply Adhesive Operation 210 and Place Window Operation 212 of FIG. 2 and so are not discussed further to avoid detracting from the principles of the invention.
- second optically curable material 502 is cured through lid 130 with ultraviolet radiation 504 in a manner similar to that described above in Cure Operation 214 of FIG. 2 .
- FIG. 7 is a block diagram 700 illustrating operations in a process for manufacturing image sensor package 100 of FIG. 1 in accordance with yet another embodiment of the present invention.
- Block diagram 700 of FIG. 7 is similar to block diagram 200 of FIG. 2 and only the significant differences are discussed below.
- first optically curable material 402 is cured with ultraviolet radiation (not shown) to form encapsulant 119 (FIG. 1) in a manner similar to that described above in Cure Operation 214 of FIG. 2 .
- a thermally curable material 502 is applied to lid mounting surface 128 of substrate 102 or, alternatively, to the periphery of interior surface 1301 of lid 130 .
- lid 130 is aligned with substrate 102 , e.g., with a mechanical or optical alignment system. More particularly, the periphery of interior surface 130 I of lid 130 is aligned with lid mounting surface 128 . Lid 130 is moved downwards to place lid 130 on substrate 102 such that thermally curable material 502 is squeezed between substrate 102 and lid 130 . As a result, thermally curable material 502 is applied between lid 130 and substrate 102 .
- image sensor package 100 is heated to cure thermally curable material 502 to form lid adhesive 132 (FIG. 1 ).
- Cure Encapsulant Operation 730 is described above as occurring before Place Window Operation 734 and before Cure Adhesive Operation 736 . However, in one alternative embodiment, Cure Encapsulant Operation 730 is performed after Place Window Operation 734 and before Cure Adhesive Operation 736 . In another alternative embodiment, Cure Encapsulant Operation 730 is performed after Place Window Operation 734 and after Cure Adhesive Operation 736 .
Abstract
Description
Claims (27)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/946,861 US6759266B1 (en) | 2001-09-04 | 2001-09-04 | Quick sealing glass-lidded package fabrication method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/946,861 US6759266B1 (en) | 2001-09-04 | 2001-09-04 | Quick sealing glass-lidded package fabrication method |
Publications (1)
Publication Number | Publication Date |
---|---|
US6759266B1 true US6759266B1 (en) | 2004-07-06 |
Family
ID=32595640
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/946,861 Expired - Lifetime US6759266B1 (en) | 2001-09-04 | 2001-09-04 | Quick sealing glass-lidded package fabrication method |
Country Status (1)
Country | Link |
---|---|
US (1) | US6759266B1 (en) |
Cited By (83)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040212717A1 (en) * | 2003-04-28 | 2004-10-28 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging device and method for producing the same |
US20050062140A1 (en) * | 2003-09-18 | 2005-03-24 | Cree, Inc. | Molded chip fabrication method and apparatus |
US20050074912A1 (en) * | 2003-09-03 | 2005-04-07 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing solid-state imaging devices |
US20050110889A1 (en) * | 2003-11-26 | 2005-05-26 | Tuttle Mark E. | Packaged microelectronic imagers and methods of packaging microelectronic imagers |
US20050167137A1 (en) * | 2004-02-04 | 2005-08-04 | Alps Electric Co., Ltd. | Electronic part and method of manufacturing the same |
US20050184219A1 (en) * | 2004-02-23 | 2005-08-25 | Kirby Kyle K. | Packaged microelectronic imagers and methods of packaging microelectronic imagers |
US20050254133A1 (en) * | 2004-05-13 | 2005-11-17 | Salman Akram | Integrated optics units and methods of manufacturing integrated optics units for use with microelectronic imagers |
US20050255628A1 (en) * | 2003-09-18 | 2005-11-17 | Micron Technology, Inc. | Microelectronic devices and methods for packaging microelectronic devices |
US20050253213A1 (en) * | 2004-05-13 | 2005-11-17 | Tongbi Jiang | Covers for microelectronic imagers and methods for wafer-level packaging of microelectronics imagers |
US20050263865A1 (en) * | 2004-05-28 | 2005-12-01 | Cheng-Chiao Wu | IC chip package |
US20050275750A1 (en) * | 2004-06-09 | 2005-12-15 | Salman Akram | Wafer-level packaged microelectronic imagers and processes for wafer-level packaging |
US20050275051A1 (en) * | 2004-06-14 | 2005-12-15 | Farnworth Warren M | Prefabricated housings for microelectronic imagers and methods for packaging microelectronic imagers |
US20050275049A1 (en) * | 2004-06-10 | 2005-12-15 | Kirby Kyle K | Packaged microelectronic imagers and methods of packging microelectronic imagers |
US20050275048A1 (en) * | 2004-06-14 | 2005-12-15 | Farnworth Warren M | Microelectronic imagers and methods of packaging microelectronic imagers |
US20050285154A1 (en) * | 2004-06-29 | 2005-12-29 | Salman Akram | Packaged microelectronic imagers and methods of packaging microelectronic imagers |
US20050287783A1 (en) * | 2004-06-29 | 2005-12-29 | Kirby Kyle K | Microelectronic devices and methods for forming interconnects in microelectronic devices |
US20060014313A1 (en) * | 2004-07-16 | 2006-01-19 | Hall Frank L | Microelectronic imaging units and methods of manufacturing microelectronic imaging units |
US20060011809A1 (en) * | 2004-07-19 | 2006-01-19 | Farnworth Warren M | Microelectronic imagers with optical devices and methods of manufacturing such microelectronic imagers |
US20060023107A1 (en) * | 2004-08-02 | 2006-02-02 | Bolken Todd O | Microelectronic imagers with optics supports having threadless interfaces and methods for manufacturing such microelectronic imagers |
US20060024856A1 (en) * | 2004-07-28 | 2006-02-02 | Derderian James M | Microelectronic imaging units and methods of manufacturing microelectronic imaging units |
US20060040421A1 (en) * | 2004-08-19 | 2006-02-23 | Farnworth Warren M | Spacers for packaged microelectronic imagers and methods of making and using spacers for wafer-level packaging of imagers |
US20060038183A1 (en) * | 2004-08-19 | 2006-02-23 | Oliver Steven D | Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers |
US20060043509A1 (en) * | 2004-08-24 | 2006-03-02 | Watkins Charles M | Packaged microelectronic imaging devices and methods of packaging microelectronic imaging devices |
US20060043512A1 (en) * | 2004-08-24 | 2006-03-02 | Oliver Steven D | Microelectronic imagers with optical devices having integral reference features and methods for manufacturing such microelectronic imagers |
US20060044433A1 (en) * | 2004-08-31 | 2006-03-02 | Micron Technology, Inc. | Microelectronic imagers having front side contacts and methods of packaging such microelectronic imagers |
US20060046351A1 (en) * | 2002-06-04 | 2006-03-02 | Bolken Todd O | Methods for packaging image sensitive electronic devices |
US20060043599A1 (en) * | 2004-09-02 | 2006-03-02 | Salman Akram | Through-wafer interconnects for photoimager and memory wafers |
US20060046332A1 (en) * | 2004-08-26 | 2006-03-02 | Derderian James M | Microelectronic Imaging units and methods of manufacturing microelectronic imaging units |
US20060043262A1 (en) * | 2004-08-30 | 2006-03-02 | Micron Technology, Inc. | Microelectronic imagers with integrated optical devices and methods for manufacturing such microelectronic imagers |
EP1655996A2 (en) * | 2004-11-02 | 2006-05-10 | Hosiden Corporation | Condenser microphone and method for manufacturing substrate for the same |
US20060131477A1 (en) * | 2004-12-16 | 2006-06-22 | Poh-Huat Lye | Optical integrated circuit package |
US20060148250A1 (en) * | 2004-12-30 | 2006-07-06 | Micron Technology, Inc. | Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods |
US20060175532A1 (en) * | 2005-02-08 | 2006-08-10 | Micron Technology, Inc. | Microelectronic imaging units and methods of manufacturing microelectronic imaging units |
US20060177999A1 (en) * | 2005-02-10 | 2006-08-10 | Micron Technology, Inc. | Microelectronic workpieces and methods for forming interconnects in microelectronic workpieces |
US20060177959A1 (en) * | 2005-02-10 | 2006-08-10 | Micron Technology, Inc. | Microfeature workpieces having microlenses and methods of forming microlenses on microfeature workpieces |
US20060186492A1 (en) * | 2005-02-18 | 2006-08-24 | Micron Technology, Inc. | Microelectronic imagers with shaped image sensors and methods for manufacturing microelectronic imagers |
US20060216850A1 (en) * | 2004-08-10 | 2006-09-28 | Street Bret K | Microelectronic imaging units and methods of manufacturing microelectronic imaging units |
US20060244113A1 (en) * | 2003-02-24 | 2006-11-02 | Lee Saimun | Leadless leadframe electronic package and sensor module incorporating same |
US20060289968A1 (en) * | 2005-06-28 | 2006-12-28 | Micron Technology, Inc. | Conductive interconnect structures and formation methods using supercritical fluids |
US20060290001A1 (en) * | 2005-06-28 | 2006-12-28 | Micron Technology, Inc. | Interconnect vias and associated methods of formation |
US20070045515A1 (en) * | 2005-09-01 | 2007-03-01 | Micron Technology, Inc. | Microelectronic imaging devices and associated methods for attaching transmissive elements |
US20070045858A1 (en) * | 2005-09-01 | 2007-03-01 | Micron Technology, Inc. | Microfeature workpieces and methods for forming interconnects in microfeature workpieces |
US20070057148A1 (en) * | 2005-09-09 | 2007-03-15 | Altus Technology Inc. | Digital camera module package fabrication method |
US20070057169A1 (en) * | 2005-09-14 | 2007-03-15 | Chung-Chi Hsiao | Package structure for an optical sensor |
US20070148807A1 (en) * | 2005-08-22 | 2007-06-28 | Salman Akram | Microelectronic imagers with integrated optical devices and methods for manufacturing such microelectronic imagers |
US20070200130A1 (en) * | 2006-02-24 | 2007-08-30 | Behringer Martin R | Electronic Device |
US20070224716A1 (en) * | 2004-09-21 | 2007-09-27 | Cree, Inc. | Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension |
US20070228387A1 (en) * | 2006-04-04 | 2007-10-04 | Gerald Negley | Uniform emission LED package |
EP1848034A2 (en) * | 2006-04-18 | 2007-10-24 | Shinko Electric Industries Co., Ltd. | Electronic component device |
US20080066950A1 (en) * | 2006-09-20 | 2008-03-20 | Nec Corporation | Wiring board and method of manufacturing wiring board |
US20080079017A1 (en) * | 2006-07-31 | 2008-04-03 | Cree, Inc. | Method of uniform phosphor chip coating and led package fabricated using method |
US20080170396A1 (en) * | 2006-11-09 | 2008-07-17 | Cree, Inc. | LED array and method for fabricating same |
US20080179611A1 (en) * | 2007-01-22 | 2008-07-31 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US20090014736A1 (en) * | 2007-07-11 | 2009-01-15 | Cree, Inc. | Coating method utilizing phosphor containment structure and devices fabricated using same |
US20090057690A1 (en) * | 2007-01-22 | 2009-03-05 | Cree, Inc. | Wafer level phosphor coating technique for warm light emitting diodes |
US20090153022A1 (en) * | 2007-12-14 | 2009-06-18 | Hussell Christopher P | Phosphor distribution in LED lamps using centrifugal force |
US20090206349A1 (en) * | 2006-08-25 | 2009-08-20 | Hiroshi Yamada | Semiconductor device and method of manufacturing the same |
US20090231826A1 (en) * | 2008-03-12 | 2009-09-17 | Micron Technology, Inc. | Method of forming a permanent carrier and spacer wafer for wafer level optics and associated structure |
US20090316299A1 (en) * | 2008-06-24 | 2009-12-24 | Alphana Technology Co., Ltd. | Disk drive device having airtight structure with improved airtightness |
US20090321903A1 (en) * | 2006-08-25 | 2009-12-31 | Sanyo Electric Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20100065929A1 (en) * | 2006-08-25 | 2010-03-18 | Kazuo Okada | Semiconductor device |
US20100164081A1 (en) * | 2008-12-29 | 2010-07-01 | Texas Instruments Incorporated | Micro-Optical Device Packaging System |
US20100187557A1 (en) * | 2009-01-28 | 2010-07-29 | Samoilov Arkadii V | Light Sensor Using Wafer-Level Packaging |
US20100194465A1 (en) * | 2009-02-02 | 2010-08-05 | Ali Salih | Temperature compensated current source and method therefor |
US20110266589A1 (en) * | 2008-03-04 | 2011-11-03 | Everlight Electronics Co., Ltd. | Light Emitting Diode Package Structure and Manufacturing Method Therefor |
US8240875B2 (en) | 2008-06-25 | 2012-08-14 | Cree, Inc. | Solid state linear array modules for general illumination |
US20120214264A1 (en) * | 2011-02-21 | 2012-08-23 | Advanced Optoelectronic Technology, Inc. | Manufacturing method for led package |
US8337071B2 (en) | 2005-12-21 | 2012-12-25 | Cree, Inc. | Lighting device |
US8637883B2 (en) | 2008-03-19 | 2014-01-28 | Cree, Inc. | Low index spacer layer in LED devices |
US20140070411A1 (en) * | 2011-06-01 | 2014-03-13 | Canon Kabushiki Kaisha | Semiconductor device |
CN103944354A (en) * | 2013-01-17 | 2014-07-23 | 台达电子工业股份有限公司 | Integrated power module packaging structure |
US20150116946A1 (en) * | 2013-10-25 | 2015-04-30 | Canon Kabushiki Kaisha | Electronic component, electronic apparatus, and method for manufacturing the electronic component |
US9024349B2 (en) | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US9041285B2 (en) | 2007-12-14 | 2015-05-26 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
WO2013103734A3 (en) * | 2012-01-04 | 2015-06-18 | Apple, Inc. | Image sensor packaging |
US9154869B2 (en) | 2012-01-04 | 2015-10-06 | Apple Inc. | Speaker with a large volume chamber and a smaller volume chamber |
US9166126B2 (en) | 2011-01-31 | 2015-10-20 | Cree, Inc. | Conformally coated light emitting devices and methods for providing the same |
US9208426B2 (en) * | 2011-08-25 | 2015-12-08 | Textilma Ag | RFID chip module |
US20160276544A1 (en) * | 2013-12-11 | 2016-09-22 | Asahi Glass Company, Limited | Cover glass for light emitting diode package, sealed structure, and light emitting device |
US10025033B2 (en) | 2016-03-01 | 2018-07-17 | Advanced Semiconductor Engineering, Inc. | Optical fiber structure, optical communication apparatus and manufacturing process for manufacturing the same |
US10241264B2 (en) | 2016-07-01 | 2019-03-26 | Advanced Semiconductor Engineering, Inc. | Semiconductor device packages |
US10546846B2 (en) | 2010-07-23 | 2020-01-28 | Cree, Inc. | Light transmission control for masking appearance of solid state light sources |
US11069824B2 (en) * | 2019-02-12 | 2021-07-20 | Ablic Inc. | Optical sensor device and method of manufacturing the same |
Citations (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4766095A (en) * | 1985-01-04 | 1988-08-23 | Oki Electric Industry Co., Ltd. | Method of manufacturing eprom device |
US5013871A (en) * | 1988-02-10 | 1991-05-07 | Olin Corporation | Kit for the assembly of a metal electronic package |
US5117279A (en) * | 1990-03-23 | 1992-05-26 | Motorola, Inc. | Semiconductor device having a low temperature uv-cured epoxy seal |
US5122861A (en) | 1988-11-25 | 1992-06-16 | Fuji Photo Film Co., Ltd. | Solid state image pickup device having particular package structure |
US5615052A (en) | 1993-04-16 | 1997-03-25 | Bruce W. McCaul | Laser diode/lens assembly |
US5706579A (en) * | 1995-02-06 | 1998-01-13 | Rjr Polymers, Inc. | Method of assembling integrated circuit package |
US5753857A (en) | 1996-06-14 | 1998-05-19 | Lg Semicon Co., Ltd. | Charge coupled device (CCD) semiconductor chip package |
US5811317A (en) * | 1995-08-25 | 1998-09-22 | Texas Instruments Incorporated | Process for reflow bonding a semiconductor die to a substrate and the product produced by the product |
US5865935A (en) | 1995-02-02 | 1999-02-02 | Eastman Kodak Company | Method of packaging image sensors |
US5950074A (en) * | 1997-04-18 | 1999-09-07 | Amkor Technology, Inc. | Method of making an integrated circuit package |
US5973337A (en) * | 1997-08-25 | 1999-10-26 | Motorola, Inc. | Ball grid device with optically transmissive coating |
US5998862A (en) * | 1993-03-26 | 1999-12-07 | Sony Corporation | Air-packed CCD images package and a mold for manufacturing thereof |
US6027590A (en) * | 1996-11-08 | 2000-02-22 | W. L. Gore & Associates, Inc. | Method for minimizing warp and die stress in the production of an electronic assembly |
US6046077A (en) * | 1998-01-07 | 2000-04-04 | Nec Corporation | Semiconductor device assembly method and semiconductor device produced by the method |
US6092281A (en) * | 1998-08-28 | 2000-07-25 | Amkor Technology, Inc. | Electromagnetic interference shield driver and method |
US6117705A (en) * | 1997-04-18 | 2000-09-12 | Amkor Technology, Inc. | Method of making integrated circuit package having adhesive bead supporting planar lid above planar substrate |
US6130448A (en) * | 1998-08-21 | 2000-10-10 | Gentex Corporation | Optical sensor package and method of making same |
US6144107A (en) | 1998-03-26 | 2000-11-07 | Nec Corporation | Solid state pickup device excellent in heat-resistance and method of manufacturing the device |
US6185180B1 (en) | 1996-12-26 | 2001-02-06 | Sony Corporation | Optical pickup device and optical disc device |
US6187611B1 (en) * | 1998-10-23 | 2001-02-13 | Microsemi Microwave Products, Inc. | Monolithic surface mount semiconductor device and method for fabricating same |
US6262513B1 (en) * | 1995-06-30 | 2001-07-17 | Kabushiki Kaisha Toshiba | Electronic component and method of production thereof |
US20010013392A1 (en) * | 1998-08-25 | 2001-08-16 | International Business Machines Corporation | Assembly process for flip chip package having a low stress chip and resulting structure |
US20020027284A1 (en) * | 2000-08-28 | 2002-03-07 | Koji Ono | Solid-state image pickup device |
US6403881B1 (en) * | 1998-08-26 | 2002-06-11 | Elliott Industries, Ltd. | Electronic component package assembly and method of manufacturing the same |
US6420204B2 (en) * | 1999-06-03 | 2002-07-16 | Amkor Technology, Inc. | Method of making a plastic package for an optical integrated circuit device |
US6492699B1 (en) * | 2000-05-22 | 2002-12-10 | Amkor Technology, Inc. | Image sensor package having sealed cavity over active area |
US6503780B1 (en) * | 2000-07-05 | 2003-01-07 | Amkor Technology, Inc. | Wafer scale image sensor package fabrication method |
US6507097B1 (en) * | 2001-11-29 | 2003-01-14 | Clarisay, Inc. | Hermetic package for pyroelectric-sensitive electronic device and method of manufacturing the same |
US6512219B1 (en) * | 2000-01-25 | 2003-01-28 | Amkor Technology, Inc. | Fabrication method for integrally connected image sensor packages having a window support in contact with the window and active area |
US6525406B1 (en) * | 1999-10-15 | 2003-02-25 | Amkor Technology, Inc. | Semiconductor device having increased moisture path and increased solder joint strength |
-
2001
- 2001-09-04 US US09/946,861 patent/US6759266B1/en not_active Expired - Lifetime
Patent Citations (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4766095A (en) * | 1985-01-04 | 1988-08-23 | Oki Electric Industry Co., Ltd. | Method of manufacturing eprom device |
US5013871A (en) * | 1988-02-10 | 1991-05-07 | Olin Corporation | Kit for the assembly of a metal electronic package |
US5122861A (en) | 1988-11-25 | 1992-06-16 | Fuji Photo Film Co., Ltd. | Solid state image pickup device having particular package structure |
US5117279A (en) * | 1990-03-23 | 1992-05-26 | Motorola, Inc. | Semiconductor device having a low temperature uv-cured epoxy seal |
US5998862A (en) * | 1993-03-26 | 1999-12-07 | Sony Corporation | Air-packed CCD images package and a mold for manufacturing thereof |
US5615052A (en) | 1993-04-16 | 1997-03-25 | Bruce W. McCaul | Laser diode/lens assembly |
US5865935A (en) | 1995-02-02 | 1999-02-02 | Eastman Kodak Company | Method of packaging image sensors |
US5706579A (en) * | 1995-02-06 | 1998-01-13 | Rjr Polymers, Inc. | Method of assembling integrated circuit package |
US6262513B1 (en) * | 1995-06-30 | 2001-07-17 | Kabushiki Kaisha Toshiba | Electronic component and method of production thereof |
US5811317A (en) * | 1995-08-25 | 1998-09-22 | Texas Instruments Incorporated | Process for reflow bonding a semiconductor die to a substrate and the product produced by the product |
US5753857A (en) | 1996-06-14 | 1998-05-19 | Lg Semicon Co., Ltd. | Charge coupled device (CCD) semiconductor chip package |
US6027590A (en) * | 1996-11-08 | 2000-02-22 | W. L. Gore & Associates, Inc. | Method for minimizing warp and die stress in the production of an electronic assembly |
US6185180B1 (en) | 1996-12-26 | 2001-02-06 | Sony Corporation | Optical pickup device and optical disc device |
US6268654B1 (en) * | 1997-04-18 | 2001-07-31 | Ankor Technology, Inc. | Integrated circuit package having adhesive bead supporting planar lid above planar substrate |
US6117705A (en) * | 1997-04-18 | 2000-09-12 | Amkor Technology, Inc. | Method of making integrated circuit package having adhesive bead supporting planar lid above planar substrate |
US5950074A (en) * | 1997-04-18 | 1999-09-07 | Amkor Technology, Inc. | Method of making an integrated circuit package |
US5973337A (en) * | 1997-08-25 | 1999-10-26 | Motorola, Inc. | Ball grid device with optically transmissive coating |
US6046077A (en) * | 1998-01-07 | 2000-04-04 | Nec Corporation | Semiconductor device assembly method and semiconductor device produced by the method |
US6144107A (en) | 1998-03-26 | 2000-11-07 | Nec Corporation | Solid state pickup device excellent in heat-resistance and method of manufacturing the device |
US6130448A (en) * | 1998-08-21 | 2000-10-10 | Gentex Corporation | Optical sensor package and method of making same |
US20010013392A1 (en) * | 1998-08-25 | 2001-08-16 | International Business Machines Corporation | Assembly process for flip chip package having a low stress chip and resulting structure |
US6403881B1 (en) * | 1998-08-26 | 2002-06-11 | Elliott Industries, Ltd. | Electronic component package assembly and method of manufacturing the same |
US6092281A (en) * | 1998-08-28 | 2000-07-25 | Amkor Technology, Inc. | Electromagnetic interference shield driver and method |
US6187611B1 (en) * | 1998-10-23 | 2001-02-13 | Microsemi Microwave Products, Inc. | Monolithic surface mount semiconductor device and method for fabricating same |
US6420204B2 (en) * | 1999-06-03 | 2002-07-16 | Amkor Technology, Inc. | Method of making a plastic package for an optical integrated circuit device |
US6525406B1 (en) * | 1999-10-15 | 2003-02-25 | Amkor Technology, Inc. | Semiconductor device having increased moisture path and increased solder joint strength |
US6512219B1 (en) * | 2000-01-25 | 2003-01-28 | Amkor Technology, Inc. | Fabrication method for integrally connected image sensor packages having a window support in contact with the window and active area |
US6492699B1 (en) * | 2000-05-22 | 2002-12-10 | Amkor Technology, Inc. | Image sensor package having sealed cavity over active area |
US6503780B1 (en) * | 2000-07-05 | 2003-01-07 | Amkor Technology, Inc. | Wafer scale image sensor package fabrication method |
US20020027284A1 (en) * | 2000-08-28 | 2002-03-07 | Koji Ono | Solid-state image pickup device |
US6507097B1 (en) * | 2001-11-29 | 2003-01-14 | Clarisay, Inc. | Hermetic package for pyroelectric-sensitive electronic device and method of manufacturing the same |
Cited By (219)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7419854B2 (en) | 2002-06-04 | 2008-09-02 | Micron Technology, Inc. | Methods for packaging image sensitive electronic devices |
US20060051890A1 (en) * | 2002-06-04 | 2006-03-09 | Bolken Todd O | Methods for packaging image sensitive electronic devices |
US7387902B2 (en) | 2002-06-04 | 2008-06-17 | Micron Technology, Inc. | Methods for packaging image sensitive electronic devices |
US20060046351A1 (en) * | 2002-06-04 | 2006-03-02 | Bolken Todd O | Methods for packaging image sensitive electronic devices |
US20060051892A1 (en) * | 2002-06-04 | 2006-03-09 | Bolken Todd O | Methods for packaging image sensitive electronic devices |
US20060051891A1 (en) * | 2002-06-04 | 2006-03-09 | Bolken Todd O | Methods for packaging image sensitive electronic devices |
US7553688B2 (en) | 2002-06-04 | 2009-06-30 | Micron Technology, Inc. | Methods for packaging image sensitive electronic devices |
US20060267169A1 (en) * | 2002-06-04 | 2006-11-30 | Bolken Todd O | Image sensitive electronic device packages |
US20060244113A1 (en) * | 2003-02-24 | 2006-11-02 | Lee Saimun | Leadless leadframe electronic package and sensor module incorporating same |
US7273765B2 (en) * | 2003-04-28 | 2007-09-25 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging device and method for producing the same |
US20040212717A1 (en) * | 2003-04-28 | 2004-10-28 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging device and method for producing the same |
US20050074912A1 (en) * | 2003-09-03 | 2005-04-07 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing solid-state imaging devices |
US7247509B2 (en) * | 2003-09-03 | 2007-07-24 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing solid-state imaging devices |
US9105817B2 (en) | 2003-09-18 | 2015-08-11 | Cree, Inc. | Molded chip fabrication method and apparatus |
US20110169038A1 (en) * | 2003-09-18 | 2011-07-14 | Cree, Inc. | Molded chip fabrication method and apparatus |
US20050062140A1 (en) * | 2003-09-18 | 2005-03-24 | Cree, Inc. | Molded chip fabrication method and apparatus |
US10164158B2 (en) | 2003-09-18 | 2018-12-25 | Cree, Inc. | Molded chip fabrication method and apparatus |
US20090278156A1 (en) * | 2003-09-18 | 2009-11-12 | Leung Michael S | Molded chip fabrication method and apparatus |
US10546978B2 (en) | 2003-09-18 | 2020-01-28 | Cree, Inc. | Molded chip fabrication method and apparatus |
US9093616B2 (en) | 2003-09-18 | 2015-07-28 | Cree, Inc. | Molded chip fabrication method and apparatus |
US20050255628A1 (en) * | 2003-09-18 | 2005-11-17 | Micron Technology, Inc. | Microelectronic devices and methods for packaging microelectronic devices |
US20100323465A1 (en) * | 2003-09-18 | 2010-12-23 | Cree, Inc. | Molded chip fabrication method and apparatus |
US7321455B2 (en) | 2003-09-18 | 2008-01-22 | Micron Technology, Inc. | Microelectronic devices and methods for packaging microelectronic devices |
US7915085B2 (en) * | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
US7583862B2 (en) | 2003-11-26 | 2009-09-01 | Aptina Imaging Corporation | Packaged microelectronic imagers and methods of packaging microelectronic imagers |
US20050231626A1 (en) * | 2003-11-26 | 2005-10-20 | Micron Technology, Inc. | Packaged microelectronic imagers and methods of packaging microelectronic imagers |
US20050110889A1 (en) * | 2003-11-26 | 2005-05-26 | Tuttle Mark E. | Packaged microelectronic imagers and methods of packaging microelectronic imagers |
US20050167137A1 (en) * | 2004-02-04 | 2005-08-04 | Alps Electric Co., Ltd. | Electronic part and method of manufacturing the same |
US20050184219A1 (en) * | 2004-02-23 | 2005-08-25 | Kirby Kyle K. | Packaged microelectronic imagers and methods of packaging microelectronic imagers |
US7253397B2 (en) * | 2004-02-23 | 2007-08-07 | Micron Technology, Inc. | Packaged microelectronic imagers and methods of packaging microelectronic imagers |
US8092734B2 (en) | 2004-05-13 | 2012-01-10 | Aptina Imaging Corporation | Covers for microelectronic imagers and methods for wafer-level packaging of microelectronics imagers |
US7253957B2 (en) | 2004-05-13 | 2007-08-07 | Micron Technology, Inc. | Integrated optics units and methods of manufacturing integrated optics units for use with microelectronic imagers |
US20050254133A1 (en) * | 2004-05-13 | 2005-11-17 | Salman Akram | Integrated optics units and methods of manufacturing integrated optics units for use with microelectronic imagers |
US20050253213A1 (en) * | 2004-05-13 | 2005-11-17 | Tongbi Jiang | Covers for microelectronic imagers and methods for wafer-level packaging of microelectronics imagers |
US20050263865A1 (en) * | 2004-05-28 | 2005-12-01 | Cheng-Chiao Wu | IC chip package |
US20050275750A1 (en) * | 2004-06-09 | 2005-12-15 | Salman Akram | Wafer-level packaged microelectronic imagers and processes for wafer-level packaging |
US8816463B2 (en) | 2004-06-09 | 2014-08-26 | Round Rock Research, Llc | Wafer-level packaged microelectronic imagers having interconnects formed through terminals |
US8035179B2 (en) | 2004-06-10 | 2011-10-11 | Micron Technology, Inc. | Packaged microelectronic imagers and methods of packaging microelectronic imagers |
US7498647B2 (en) | 2004-06-10 | 2009-03-03 | Micron Technology, Inc. | Packaged microelectronic imagers and methods of packaging microelectronic imagers |
US8703518B2 (en) | 2004-06-10 | 2014-04-22 | Micron Technology, Inc. | Packaged microelectronic imagers and methods of packaging microelectronic imagers |
US20050275049A1 (en) * | 2004-06-10 | 2005-12-15 | Kirby Kyle K | Packaged microelectronic imagers and methods of packging microelectronic imagers |
US7253390B2 (en) | 2004-06-14 | 2007-08-07 | Micron Technology, Inc. | Methods for packaging microelectronic imagers |
US7199439B2 (en) | 2004-06-14 | 2007-04-03 | Micron Technology, Inc. | Microelectronic imagers and methods of packaging microelectronic imagers |
US20060186317A1 (en) * | 2004-06-14 | 2006-08-24 | Farnworth Warren M | Methods for packaging microelectronic imagers |
US7419841B2 (en) | 2004-06-14 | 2008-09-02 | Micron Technology, Inc. | Microelectronic imagers and methods of packaging microelectronic imagers |
US7262405B2 (en) | 2004-06-14 | 2007-08-28 | Micron Technology, Inc. | Prefabricated housings for microelectronic imagers |
US20050275051A1 (en) * | 2004-06-14 | 2005-12-15 | Farnworth Warren M | Prefabricated housings for microelectronic imagers and methods for packaging microelectronic imagers |
US20050275048A1 (en) * | 2004-06-14 | 2005-12-15 | Farnworth Warren M | Microelectronic imagers and methods of packaging microelectronic imagers |
US20060199363A1 (en) * | 2004-06-29 | 2006-09-07 | Micron Technology, Inc. | Microelectronic devices and methods for forming interconnects in microelectronic devices |
US20050285154A1 (en) * | 2004-06-29 | 2005-12-29 | Salman Akram | Packaged microelectronic imagers and methods of packaging microelectronic imagers |
US20080020505A1 (en) * | 2004-06-29 | 2008-01-24 | Salman Akram | Packaged microelectronic imagers and methods of packaging microelectronic imagers |
US20050287783A1 (en) * | 2004-06-29 | 2005-12-29 | Kirby Kyle K | Microelectronic devices and methods for forming interconnects in microelectronic devices |
US20110089539A1 (en) * | 2004-06-29 | 2011-04-21 | Round Rock Research, Llc | Packaged microelectronic imagers and methods of packaging microelectronic imagers |
US7329943B2 (en) | 2004-06-29 | 2008-02-12 | Micron Technology, Inc. | Microelectronic devices and methods for forming interconnects in microelectronic devices |
US7232754B2 (en) | 2004-06-29 | 2007-06-19 | Micron Technology, Inc. | Microelectronic devices and methods for forming interconnects in microelectronic devices |
US7829976B2 (en) | 2004-06-29 | 2010-11-09 | Micron Technology, Inc. | Microelectronic devices and methods for forming interconnects in microelectronic devices |
US7858429B2 (en) | 2004-06-29 | 2010-12-28 | Round Rock Research, Llc | Packaged microelectronic imagers and methods of packaging microelectronic imagers |
US8053857B2 (en) | 2004-06-29 | 2011-11-08 | Round Rock Research, Llc | Packaged microelectronic imagers and methods of packaging microelectronic imagers |
US7294897B2 (en) | 2004-06-29 | 2007-11-13 | Micron Technology, Inc. | Packaged microelectronic imagers and methods of packaging microelectronic imagers |
US7417294B2 (en) | 2004-07-16 | 2008-08-26 | Micron Technology, Inc. | Microelectronic imaging units and methods of manufacturing microelectronic imaging units |
US20070117249A1 (en) * | 2004-07-16 | 2007-05-24 | Hall Frank L | Microelectronic imaging units and methods of manufacturing microelectronic imaging units |
US20060014313A1 (en) * | 2004-07-16 | 2006-01-19 | Hall Frank L | Microelectronic imaging units and methods of manufacturing microelectronic imaging units |
US7416913B2 (en) | 2004-07-16 | 2008-08-26 | Micron Technology, Inc. | Methods of manufacturing microelectronic imaging units with discrete standoffs |
US20060011809A1 (en) * | 2004-07-19 | 2006-01-19 | Farnworth Warren M | Microelectronic imagers with optical devices and methods of manufacturing such microelectronic imagers |
US7189954B2 (en) | 2004-07-19 | 2007-03-13 | Micron Technology, Inc. | Microelectronic imagers with optical devices and methods of manufacturing such microelectronic imagers |
US7504615B2 (en) | 2004-07-19 | 2009-03-17 | Aptina Imaging Corporation | Microelectronic imagers with optical devices and methods of manufacturing such microelectronic imagers |
US7265330B2 (en) | 2004-07-19 | 2007-09-04 | Micron Technology, Inc. | Microelectronic imagers with optical devices and methods of manufacturing such microelectronic imagers |
US7709776B2 (en) | 2004-07-19 | 2010-05-04 | Aptina Imaging Corporation | Microelectronic imagers with optical devices and methods of manufacturing such microelectronic imagers |
US20090155949A1 (en) * | 2004-07-19 | 2009-06-18 | Farnworth Warren M | Microelectronic imagers with optical devices and methods of manufacturing such microelectronic imagers |
US20070170350A1 (en) * | 2004-07-19 | 2007-07-26 | Farnworth Warren M | Microelectronic imagers with optical devices and methods of manufacturing such microelectronic imagers |
US20060243889A1 (en) * | 2004-07-19 | 2006-11-02 | Farnworth Warren M | Microelectronic imagers with optical devices and methods of manufacturing such microelectronic imagers |
US20080241985A1 (en) * | 2004-07-28 | 2008-10-02 | Derderian James M | Microelectronic imaging units and methods of manufacturing microelectronic imaging units |
US20080268563A1 (en) * | 2004-07-28 | 2008-10-30 | Derderian James M | Microelectronic Imaging Units and Methods of Manufacturing Microelectronic Imaging Units |
US7858420B2 (en) | 2004-07-28 | 2010-12-28 | Micron Technology, Inc. | Microelectronic imaging units and methods of manufacturing microelectronic imaging units |
US7439598B2 (en) | 2004-07-28 | 2008-10-21 | Micron Technology, Inc. | Microelectronic imaging units |
US7402453B2 (en) | 2004-07-28 | 2008-07-22 | Micron Technology, Inc. | Microelectronic imaging units and methods of manufacturing microelectronic imaging units |
US20070034979A1 (en) * | 2004-07-28 | 2007-02-15 | Derderian James M | Microelectronic imaging units and methods of manufacturing microelectronic imaging units |
US7655507B2 (en) | 2004-07-28 | 2010-02-02 | Micron Technology Inc. | Microelectronic imaging units and methods of manufacturing microelectronic imaging units |
US20060024856A1 (en) * | 2004-07-28 | 2006-02-02 | Derderian James M | Microelectronic imaging units and methods of manufacturing microelectronic imaging units |
US20060023107A1 (en) * | 2004-08-02 | 2006-02-02 | Bolken Todd O | Microelectronic imagers with optics supports having threadless interfaces and methods for manufacturing such microelectronic imagers |
US20060216850A1 (en) * | 2004-08-10 | 2006-09-28 | Street Bret K | Microelectronic imaging units and methods of manufacturing microelectronic imaging units |
US7498606B2 (en) | 2004-08-10 | 2009-03-03 | Micron Technology, Inc. | Microelectronic imaging units and methods of manufacturing microelectronic imaging units |
US7364934B2 (en) | 2004-08-10 | 2008-04-29 | Micron Technology, Inc. | Microelectronic imaging units and methods of manufacturing microelectronic imaging units |
US20060275941A1 (en) * | 2004-08-19 | 2006-12-07 | Oliver Steven D | Methods for manufacturing microelectronic imagers |
US20060040421A1 (en) * | 2004-08-19 | 2006-02-23 | Farnworth Warren M | Spacers for packaged microelectronic imagers and methods of making and using spacers for wafer-level packaging of imagers |
US20060038183A1 (en) * | 2004-08-19 | 2006-02-23 | Oliver Steven D | Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers |
US7397066B2 (en) | 2004-08-19 | 2008-07-08 | Micron Technology, Inc. | Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers |
US7723741B2 (en) | 2004-08-19 | 2010-05-25 | Aptina Imaging Corporation | Spacers for packaged microelectronic imagers and methods of making and using spacers for wafer-level packaging of imagers |
US7223626B2 (en) | 2004-08-19 | 2007-05-29 | Micron Technology, Inc. | Spacers for packaged microelectronic imagers and methods of making and using spacers for wafer-level packaging of imagers |
US20060234422A1 (en) * | 2004-08-19 | 2006-10-19 | Farnworth Warren M | Spacers for packaged microelectronic imagers and methods of making and using spacers for wafer-level packaging of imagers |
US20080237443A1 (en) * | 2004-08-19 | 2008-10-02 | Oliver Steven D | Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers |
US7115961B2 (en) | 2004-08-24 | 2006-10-03 | Micron Technology, Inc. | Packaged microelectronic imaging devices and methods of packaging microelectronic imaging devices |
US7341881B2 (en) | 2004-08-24 | 2008-03-11 | Micron Technology, Inc. | Methods of packaging and testing microelectronic imaging devices |
US20060043509A1 (en) * | 2004-08-24 | 2006-03-02 | Watkins Charles M | Packaged microelectronic imaging devices and methods of packaging microelectronic imaging devices |
US20060043512A1 (en) * | 2004-08-24 | 2006-03-02 | Oliver Steven D | Microelectronic imagers with optical devices having integral reference features and methods for manufacturing such microelectronic imagers |
US7429494B2 (en) | 2004-08-24 | 2008-09-30 | Micron Technology, Inc. | Microelectronic imagers with optical devices having integral reference features and methods for manufacturing such microelectronic imagers |
US20060255418A1 (en) * | 2004-08-24 | 2006-11-16 | Watkins Charles M | Packaged microelectronic imaging devices and methods of packaging microelectronic imaging device |
US7993944B2 (en) | 2004-08-24 | 2011-08-09 | Micron Technology, Inc. | Microelectronic imagers with optical devices having integral reference features and methods for manufacturing such microelectronic imagers |
US7276393B2 (en) | 2004-08-26 | 2007-10-02 | Micron Technology, Inc. | Microelectronic imaging units and methods of manufacturing microelectronic imaging units |
US7691660B2 (en) | 2004-08-26 | 2010-04-06 | Aptina Imaging Corporation | Methods of manufacturing microelectronic imaging units on a microfeature workpiece |
US7786574B2 (en) | 2004-08-26 | 2010-08-31 | Aptina Imaging Corp. | Microelectronic imaging units |
US20060046332A1 (en) * | 2004-08-26 | 2006-03-02 | Derderian James M | Microelectronic Imaging units and methods of manufacturing microelectronic imaging units |
US20060223207A1 (en) * | 2004-08-26 | 2006-10-05 | Derderian James M | Microelectronic imaging units and methods of manufacturing microelectronic imaging units |
US7511374B2 (en) | 2004-08-26 | 2009-03-31 | Aptina Imaging Corporation | Microelectronic imaging units having covered image sensors |
US20090148969A1 (en) * | 2004-08-26 | 2009-06-11 | Derderian James M | Microelectronic imaging units |
US20060043262A1 (en) * | 2004-08-30 | 2006-03-02 | Micron Technology, Inc. | Microelectronic imagers with integrated optical devices and methods for manufacturing such microelectronic imagers |
US7511262B2 (en) | 2004-08-30 | 2009-03-31 | Micron Technology, Inc. | Optical device and assembly for use with imaging dies, and wafer-label imager assembly |
US7547877B2 (en) | 2004-08-30 | 2009-06-16 | Micron Technology, Inc. | Microelectronic imagers with integrated optical devices and methods for manufacturing such microelectronic imagers |
US20080293179A1 (en) * | 2004-08-30 | 2008-11-27 | Salman Akram | Microelectronic imagers with integrated optical devices and methods for manufacturing such microelectronic imagers |
US7842915B2 (en) | 2004-08-30 | 2010-11-30 | Micron Technology, Inc. | Microelectronic imagers with integrated optical devices and methods for manufacturing such microelectronic imagers |
US7646075B2 (en) | 2004-08-31 | 2010-01-12 | Micron Technology, Inc. | Microelectronic imagers having front side contacts |
US20060044433A1 (en) * | 2004-08-31 | 2006-03-02 | Micron Technology, Inc. | Microelectronic imagers having front side contacts and methods of packaging such microelectronic imagers |
US7956443B2 (en) | 2004-09-02 | 2011-06-07 | Micron Technology, Inc. | Through-wafer interconnects for photoimager and memory wafers |
US7300857B2 (en) | 2004-09-02 | 2007-11-27 | Micron Technology, Inc. | Through-wafer interconnects for photoimager and memory wafers |
US8669179B2 (en) | 2004-09-02 | 2014-03-11 | Micron Technology, Inc. | Through-wafer interconnects for photoimager and memory wafers |
US8502353B2 (en) | 2004-09-02 | 2013-08-06 | Micron Technology, Inc. | Through-wafer interconnects for photoimager and memory wafers |
US7683458B2 (en) | 2004-09-02 | 2010-03-23 | Micron Technology, Inc. | Through-wafer interconnects for photoimager and memory wafers |
US20060043599A1 (en) * | 2004-09-02 | 2006-03-02 | Salman Akram | Through-wafer interconnects for photoimager and memory wafers |
US7569407B2 (en) | 2004-09-21 | 2009-08-04 | Cree, Inc. | Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension |
US20070224716A1 (en) * | 2004-09-21 | 2007-09-27 | Cree, Inc. | Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension |
EP1655996A3 (en) * | 2004-11-02 | 2009-12-09 | Hosiden Corporation | Condenser microphone and method for manufacturing substrate for the same |
EP1655996A2 (en) * | 2004-11-02 | 2006-05-10 | Hosiden Corporation | Condenser microphone and method for manufacturing substrate for the same |
US7473889B2 (en) * | 2004-12-16 | 2009-01-06 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Optical integrated circuit package |
US20060131477A1 (en) * | 2004-12-16 | 2006-06-22 | Poh-Huat Lye | Optical integrated circuit package |
US20060148250A1 (en) * | 2004-12-30 | 2006-07-06 | Micron Technology, Inc. | Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods |
US20060205211A1 (en) * | 2004-12-30 | 2006-09-14 | Micron Technology, Inc. | Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods |
US7271482B2 (en) | 2004-12-30 | 2007-09-18 | Micron Technology, Inc. | Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods |
US20060175532A1 (en) * | 2005-02-08 | 2006-08-10 | Micron Technology, Inc. | Microelectronic imaging units and methods of manufacturing microelectronic imaging units |
US20080017943A1 (en) * | 2005-02-10 | 2008-01-24 | Boettiger Ulrich C | Microfeature workpieces having microlenses and methods of forming microlenses on microfeature workpieces |
US7795649B2 (en) | 2005-02-10 | 2010-09-14 | Aptina Imaging Corporation | Microfeature workpieces having microlenses and methods of forming microlenses on microfeature workpieces |
US20060177959A1 (en) * | 2005-02-10 | 2006-08-10 | Micron Technology, Inc. | Microfeature workpieces having microlenses and methods of forming microlenses on microfeature workpieces |
US20060177999A1 (en) * | 2005-02-10 | 2006-08-10 | Micron Technology, Inc. | Microelectronic workpieces and methods for forming interconnects in microelectronic workpieces |
US7303931B2 (en) | 2005-02-10 | 2007-12-04 | Micron Technology, Inc. | Microfeature workpieces having microlenses and methods of forming microlenses on microfeature workpieces |
US20060186492A1 (en) * | 2005-02-18 | 2006-08-24 | Micron Technology, Inc. | Microelectronic imagers with shaped image sensors and methods for manufacturing microelectronic imagers |
US7390687B2 (en) | 2005-02-18 | 2008-06-24 | Micron Technology, Inc. | Microelectronic imagers with shaped image sensors and methods for manufacturing microelectronic imagers |
US20070120212A1 (en) * | 2005-02-18 | 2007-05-31 | Boettiger Ulrich C | Microelectronic imagers with shaped image sensors and methods for manufacturing microelectronic imagers |
US20070096235A1 (en) * | 2005-02-18 | 2007-05-03 | Boettiger Ulrich C | Microelectronic imagers with shaped image sensors and methods for manufacturing microelectronic imagers |
US7696588B2 (en) | 2005-02-18 | 2010-04-13 | Aptina Imaging Corporation | Microelectronic imagers with shaped image sensors and methods for manufacturing microelectronic imagers |
US7190039B2 (en) | 2005-02-18 | 2007-03-13 | Micron Technology, Inc. | Microelectronic imagers with shaped image sensors and methods for manufacturing microelectronic imagers |
US20060290001A1 (en) * | 2005-06-28 | 2006-12-28 | Micron Technology, Inc. | Interconnect vias and associated methods of formation |
US7795134B2 (en) | 2005-06-28 | 2010-09-14 | Micron Technology, Inc. | Conductive interconnect structures and formation methods using supercritical fluids |
US8008192B2 (en) | 2005-06-28 | 2011-08-30 | Micron Technology, Inc. | Conductive interconnect structures and formation methods using supercritical fluids |
US9293367B2 (en) | 2005-06-28 | 2016-03-22 | Micron Technology, Inc. | Conductive interconnect structures and formation methods using supercritical fluids |
US20060289968A1 (en) * | 2005-06-28 | 2006-12-28 | Micron Technology, Inc. | Conductive interconnect structures and formation methods using supercritical fluids |
US20070148807A1 (en) * | 2005-08-22 | 2007-06-28 | Salman Akram | Microelectronic imagers with integrated optical devices and methods for manufacturing such microelectronic imagers |
US20070045515A1 (en) * | 2005-09-01 | 2007-03-01 | Micron Technology, Inc. | Microelectronic imaging devices and associated methods for attaching transmissive elements |
US7663096B2 (en) | 2005-09-01 | 2010-02-16 | Aptina Imaging Corporation | Microelectronic imaging devices and associated methods for attaching transmissive elements |
US20070045858A1 (en) * | 2005-09-01 | 2007-03-01 | Micron Technology, Inc. | Microfeature workpieces and methods for forming interconnects in microfeature workpieces |
US20080001068A1 (en) * | 2005-09-01 | 2008-01-03 | Farnworth Warren M | Microelectronic imaging devices and associated methods for attaching transmissive elements |
US7288757B2 (en) | 2005-09-01 | 2007-10-30 | Micron Technology, Inc. | Microelectronic imaging devices and associated methods for attaching transmissive elements |
US7915736B2 (en) | 2005-09-01 | 2011-03-29 | Micron Technology, Inc. | Microfeature workpieces and methods for forming interconnects in microfeature workpieces |
US7262134B2 (en) | 2005-09-01 | 2007-08-28 | Micron Technology, Inc. | Microfeature workpieces and methods for forming interconnects in microfeature workpieces |
US20070057148A1 (en) * | 2005-09-09 | 2007-03-15 | Altus Technology Inc. | Digital camera module package fabrication method |
US7342215B2 (en) * | 2005-09-09 | 2008-03-11 | Altus Technology Inc. | Digital camera module package fabrication method |
US20070057169A1 (en) * | 2005-09-14 | 2007-03-15 | Chung-Chi Hsiao | Package structure for an optical sensor |
US8337071B2 (en) | 2005-12-21 | 2012-12-25 | Cree, Inc. | Lighting device |
US20070200130A1 (en) * | 2006-02-24 | 2007-08-30 | Behringer Martin R | Electronic Device |
US7851812B2 (en) | 2006-02-24 | 2010-12-14 | Osram Opto Semiconductors Gmbh | Housed optoelectronic component |
US20070228387A1 (en) * | 2006-04-04 | 2007-10-04 | Gerald Negley | Uniform emission LED package |
US8969908B2 (en) | 2006-04-04 | 2015-03-03 | Cree, Inc. | Uniform emission LED package |
EP1848034A2 (en) * | 2006-04-18 | 2007-10-24 | Shinko Electric Industries Co., Ltd. | Electronic component device |
EP1848034A3 (en) * | 2006-04-18 | 2010-03-10 | Shinko Electric Industries Co., Ltd. | Electronic component device |
US20080079017A1 (en) * | 2006-07-31 | 2008-04-03 | Cree, Inc. | Method of uniform phosphor chip coating and led package fabricated using method |
US7943952B2 (en) | 2006-07-31 | 2011-05-17 | Cree, Inc. | Method of uniform phosphor chip coating and LED package fabricated using method |
US8653612B2 (en) | 2006-08-25 | 2014-02-18 | Sanyo Semiconductor Co., Ltd. | Semiconductor device |
US20090321903A1 (en) * | 2006-08-25 | 2009-12-31 | Sanyo Electric Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20090206349A1 (en) * | 2006-08-25 | 2009-08-20 | Hiroshi Yamada | Semiconductor device and method of manufacturing the same |
US20100065929A1 (en) * | 2006-08-25 | 2010-03-18 | Kazuo Okada | Semiconductor device |
US8148811B2 (en) | 2006-08-25 | 2012-04-03 | Semiconductor Components Industries, Llc | Semiconductor device and manufacturing method thereof |
US9034729B2 (en) * | 2006-08-25 | 2015-05-19 | Semiconductor Components Industries, Llc | Semiconductor device and method of manufacturing the same |
US7876571B2 (en) * | 2006-09-20 | 2011-01-25 | Nec Corporation | Wiring board and method of manufacturing wiring board |
US20080066950A1 (en) * | 2006-09-20 | 2008-03-20 | Nec Corporation | Wiring board and method of manufacturing wiring board |
US20080170396A1 (en) * | 2006-11-09 | 2008-07-17 | Cree, Inc. | LED array and method for fabricating same |
US10295147B2 (en) | 2006-11-09 | 2019-05-21 | Cree, Inc. | LED array and method for fabricating same |
US9159888B2 (en) | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US20090057690A1 (en) * | 2007-01-22 | 2009-03-05 | Cree, Inc. | Wafer level phosphor coating technique for warm light emitting diodes |
US9024349B2 (en) | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US8232564B2 (en) | 2007-01-22 | 2012-07-31 | Cree, Inc. | Wafer level phosphor coating technique for warm light emitting diodes |
US20080179611A1 (en) * | 2007-01-22 | 2008-07-31 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US20090014736A1 (en) * | 2007-07-11 | 2009-01-15 | Cree, Inc. | Coating method utilizing phosphor containment structure and devices fabricated using same |
US10505083B2 (en) | 2007-07-11 | 2019-12-10 | Cree, Inc. | Coating method utilizing phosphor containment structure and devices fabricated using same |
US8167674B2 (en) | 2007-12-14 | 2012-05-01 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
US9041285B2 (en) | 2007-12-14 | 2015-05-26 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
US20090153022A1 (en) * | 2007-12-14 | 2009-06-18 | Hussell Christopher P | Phosphor distribution in LED lamps using centrifugal force |
US20110266589A1 (en) * | 2008-03-04 | 2011-11-03 | Everlight Electronics Co., Ltd. | Light Emitting Diode Package Structure and Manufacturing Method Therefor |
US7888758B2 (en) * | 2008-03-12 | 2011-02-15 | Aptina Imaging Corporation | Method of forming a permanent carrier and spacer wafer for wafer level optics and associated structure |
US20090231826A1 (en) * | 2008-03-12 | 2009-09-17 | Micron Technology, Inc. | Method of forming a permanent carrier and spacer wafer for wafer level optics and associated structure |
US8637883B2 (en) | 2008-03-19 | 2014-01-28 | Cree, Inc. | Low index spacer layer in LED devices |
US20090316299A1 (en) * | 2008-06-24 | 2009-12-24 | Alphana Technology Co., Ltd. | Disk drive device having airtight structure with improved airtightness |
US8139316B2 (en) * | 2008-06-24 | 2012-03-20 | Alphana Technology Co., Ltd. | Disk drive device having airtight structure with improved airtightness |
US8240875B2 (en) | 2008-06-25 | 2012-08-14 | Cree, Inc. | Solid state linear array modules for general illumination |
US8764226B2 (en) | 2008-06-25 | 2014-07-01 | Cree, Inc. | Solid state array modules for general illumination |
US8445984B2 (en) | 2008-12-29 | 2013-05-21 | Texas Instruments Incorporated | Micro-optical device packaging system |
US20110204464A1 (en) * | 2008-12-29 | 2011-08-25 | Texas Instruments Incorporated | Micro-Optical Device Packaging System |
US7936033B2 (en) | 2008-12-29 | 2011-05-03 | Texas Instruments Incorporated | Micro-optical device packaging system |
US20100164081A1 (en) * | 2008-12-29 | 2010-07-01 | Texas Instruments Incorporated | Micro-Optical Device Packaging System |
US8405115B2 (en) * | 2009-01-28 | 2013-03-26 | Maxim Integrated Products, Inc. | Light sensor using wafer-level packaging |
US20100187557A1 (en) * | 2009-01-28 | 2010-07-29 | Samoilov Arkadii V | Light Sensor Using Wafer-Level Packaging |
US20100194465A1 (en) * | 2009-02-02 | 2010-08-05 | Ali Salih | Temperature compensated current source and method therefor |
US10546846B2 (en) | 2010-07-23 | 2020-01-28 | Cree, Inc. | Light transmission control for masking appearance of solid state light sources |
US9166126B2 (en) | 2011-01-31 | 2015-10-20 | Cree, Inc. | Conformally coated light emitting devices and methods for providing the same |
US20120214264A1 (en) * | 2011-02-21 | 2012-08-23 | Advanced Optoelectronic Technology, Inc. | Manufacturing method for led package |
US8664018B2 (en) * | 2011-02-21 | 2014-03-04 | Advanced Optoelectronic Technology, Inc. | Manufacturing method for LED package |
US9275949B2 (en) * | 2011-06-01 | 2016-03-01 | Canon Kabushiki Kaisha | Semiconductor device |
US20140070411A1 (en) * | 2011-06-01 | 2014-03-13 | Canon Kabushiki Kaisha | Semiconductor device |
US9208426B2 (en) * | 2011-08-25 | 2015-12-08 | Textilma Ag | RFID chip module |
WO2013103734A3 (en) * | 2012-01-04 | 2015-06-18 | Apple, Inc. | Image sensor packaging |
US9154869B2 (en) | 2012-01-04 | 2015-10-06 | Apple Inc. | Speaker with a large volume chamber and a smaller volume chamber |
CN103944354B (en) * | 2013-01-17 | 2017-03-22 | 台达电子工业股份有限公司 | Integrated power module packaging structure |
CN103944354A (en) * | 2013-01-17 | 2014-07-23 | 台达电子工业股份有限公司 | Integrated power module packaging structure |
CN104576570B (en) * | 2013-10-25 | 2017-09-12 | 佳能株式会社 | Electronic unit, electronic installation and the method for manufacturing electronic unit |
US9585287B2 (en) * | 2013-10-25 | 2017-02-28 | Canon Kabushiki Kaisha | Electronic component, electronic apparatus, and method for manufacturing the electronic component |
US20150116946A1 (en) * | 2013-10-25 | 2015-04-30 | Canon Kabushiki Kaisha | Electronic component, electronic apparatus, and method for manufacturing the electronic component |
US20160276544A1 (en) * | 2013-12-11 | 2016-09-22 | Asahi Glass Company, Limited | Cover glass for light emitting diode package, sealed structure, and light emitting device |
US9831392B2 (en) * | 2013-12-11 | 2017-11-28 | Asahi Glass Company, Limited | Cover glass for light emitting diode package, sealed structure, and light emitting device |
US10025033B2 (en) | 2016-03-01 | 2018-07-17 | Advanced Semiconductor Engineering, Inc. | Optical fiber structure, optical communication apparatus and manufacturing process for manufacturing the same |
US10241264B2 (en) | 2016-07-01 | 2019-03-26 | Advanced Semiconductor Engineering, Inc. | Semiconductor device packages |
US10838144B2 (en) | 2016-07-01 | 2020-11-17 | Advanced Semiconductor Engineering, Inc. | Semiconductor device packages |
US11069824B2 (en) * | 2019-02-12 | 2021-07-20 | Ablic Inc. | Optical sensor device and method of manufacturing the same |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6759266B1 (en) | Quick sealing glass-lidded package fabrication method | |
US6603183B1 (en) | Quick sealing glass-lidded package | |
US6686588B1 (en) | Optical module with lens integral holder | |
US7609461B1 (en) | Optical module having cavity substrate | |
US7911017B1 (en) | Direct glass attached on die optical module | |
US6492699B1 (en) | Image sensor package having sealed cavity over active area | |
US6407381B1 (en) | Wafer scale image sensor package | |
US6734419B1 (en) | Method for forming an image sensor package with vision die in lens housing | |
US6503780B1 (en) | Wafer scale image sensor package fabrication method | |
US8093674B2 (en) | Manufacturing method for molding image sensor package structure and image sensor package structure thereof | |
US7274094B2 (en) | Leadless packaging for image sensor devices | |
US20070210246A1 (en) | Stacked image sensor optical module and fabrication method | |
US6512219B1 (en) | Fabrication method for integrally connected image sensor packages having a window support in contact with the window and active area | |
JP2003198897A (en) | Optical module, circuit board, and electronic device | |
KR101579623B1 (en) | Semiconductor package for image sensor and fabricatingmethod thereof | |
US7002241B1 (en) | Packaging of semiconductor device with a non-opaque cover | |
JPH0621251A (en) | Semiconductor device provided with low- temperature uv-curing epoxy seal and its manufacture | |
US6630661B1 (en) | Sensor module with integrated discrete components mounted on a window | |
US6683386B2 (en) | Low profile optically-sensitive semiconductor package | |
US8003426B2 (en) | Method for manufacturing package structure of optical device | |
US6707148B1 (en) | Bumped integrated circuits for optical applications | |
US6515269B1 (en) | Integrally connected image sensor packages having a window support in contact with a window and the active area | |
US20050009239A1 (en) | Optoelectronic packaging with embedded window | |
US6528857B1 (en) | Chip size image sensor bumped package | |
US6509560B1 (en) | Chip size image sensor in wirebond package with step-up ring for electrical contact |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: AMKOR TECHNOLOGY, INC., ARIZONA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:HOFFMAN, PAUL ROBERT;REEL/FRAME:012159/0306 Effective date: 20010830 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
AS | Assignment |
Owner name: CITICORP NORTH AMERICA, INC. AS AGENT, PENNSYLVANI Free format text: SECURITY AGREEMENT;ASSIGNORS:AMKOR TECHNOLOGY, INC.;GUARDIAN ASSETS, INC.;REEL/FRAME:015320/0005 Effective date: 20041027 Owner name: CITICORP NORTH AMERICA, INC. AS "AGENT", NEW YORK Free format text: SECURITY AGREEMENT;ASSIGNORS:AMKOR TECHNOLOGY, INC.;GUARDIAN ASSETS, INC.;REEL/FRAME:015942/0521 Effective date: 20041027 |
|
AS | Assignment |
Owner name: BANK OF AMERICA, N.A., TEXAS Free format text: SECURITY AGREEMENT;ASSIGNOR:AMKOR TECHNOLOGY, INC.;REEL/FRAME:017379/0630 Effective date: 20051123 |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
REMI | Maintenance fee reminder mailed | ||
FPAY | Fee payment |
Year of fee payment: 8 |
|
FPAY | Fee payment |
Year of fee payment: 12 |
|
AS | Assignment |
Owner name: BANK OF AMERICA, N.A., AS AGENT, CALIFORNIA Free format text: SECURITY INTEREST;ASSIGNOR:AMKOR TECHNOLOGY, INC.;REEL/FRAME:046683/0139 Effective date: 20180713 |
|
AS | Assignment |
Owner name: AMKOR TECHNOLOGY SINGAPORE HOLDING PTE.LTD., SINGAPORE Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:AMKOR TECHNOLOGY, INC.;REEL/FRAME:054067/0135 Effective date: 20191119 |