US6849919B2 - Method of fabricating a semiconductor device with a trench isolation structure and resulting semiconductor device - Google Patents
Method of fabricating a semiconductor device with a trench isolation structure and resulting semiconductor device Download PDFInfo
- Publication number
- US6849919B2 US6849919B2 US10/136,404 US13640402A US6849919B2 US 6849919 B2 US6849919 B2 US 6849919B2 US 13640402 A US13640402 A US 13640402A US 6849919 B2 US6849919 B2 US 6849919B2
- Authority
- US
- United States
- Prior art keywords
- film
- recess
- semiconductor device
- trench
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related, expires
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
- H01L21/76235—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls trench shape altered by a local oxidation of silicon process step, e.g. trench corner rounding by LOCOS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
- H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/485—Bit line contacts
Abstract
Description
Claims (4)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/033,322 US7268056B2 (en) | 2001-08-13 | 2005-01-12 | Method of fabricating a semiconductor device with a trench isolation structure and resulting semiconductor device |
US11/822,467 US7326627B2 (en) | 2001-08-13 | 2007-07-06 | Method of fabricating a semiconductor device with a trench isolation structure and resulting semiconductor device |
US11/822,470 US7808031B2 (en) | 2001-08-13 | 2007-07-06 | Method of fabricating a semiconductor device with a trench isolation structure and resulting semiconductor device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001245209A JP2003060024A (en) | 2001-08-13 | 2001-08-13 | Semiconductor device and method for manufacturing the same |
JP2001-245209(P) | 2001-08-13 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/033,322 Continuation US7268056B2 (en) | 2001-08-13 | 2005-01-12 | Method of fabricating a semiconductor device with a trench isolation structure and resulting semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
US20030030089A1 US20030030089A1 (en) | 2003-02-13 |
US6849919B2 true US6849919B2 (en) | 2005-02-01 |
Family
ID=19075006
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/136,404 Expired - Fee Related US6849919B2 (en) | 2001-08-13 | 2002-05-02 | Method of fabricating a semiconductor device with a trench isolation structure and resulting semiconductor device |
US11/033,322 Expired - Fee Related US7268056B2 (en) | 2001-08-13 | 2005-01-12 | Method of fabricating a semiconductor device with a trench isolation structure and resulting semiconductor device |
US11/822,467 Expired - Fee Related US7326627B2 (en) | 2001-08-13 | 2007-07-06 | Method of fabricating a semiconductor device with a trench isolation structure and resulting semiconductor device |
US11/822,470 Expired - Fee Related US7808031B2 (en) | 2001-08-13 | 2007-07-06 | Method of fabricating a semiconductor device with a trench isolation structure and resulting semiconductor device |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/033,322 Expired - Fee Related US7268056B2 (en) | 2001-08-13 | 2005-01-12 | Method of fabricating a semiconductor device with a trench isolation structure and resulting semiconductor device |
US11/822,467 Expired - Fee Related US7326627B2 (en) | 2001-08-13 | 2007-07-06 | Method of fabricating a semiconductor device with a trench isolation structure and resulting semiconductor device |
US11/822,470 Expired - Fee Related US7808031B2 (en) | 2001-08-13 | 2007-07-06 | Method of fabricating a semiconductor device with a trench isolation structure and resulting semiconductor device |
Country Status (5)
Country | Link |
---|---|
US (4) | US6849919B2 (en) |
JP (1) | JP2003060024A (en) |
KR (1) | KR100491550B1 (en) |
DE (1) | DE10220898A1 (en) |
TW (1) | TW541649B (en) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020056886A1 (en) * | 2000-11-13 | 2002-05-16 | Sanyo Electric Co.,Ltd. | Semiconductor device having element isolation trench and method of fabricating the same |
US20050008314A1 (en) * | 2000-11-24 | 2005-01-13 | John Paul Drake | Fabrication of integrated circuit |
US20050059220A1 (en) * | 2003-09-17 | 2005-03-17 | Oki Electric Co., Ltd. | Semiconductor device and method of manufacturing the same |
US20050079722A1 (en) * | 2003-10-10 | 2005-04-14 | Hsu-Sheng Yu | Methods of simultaneously fabricating isolation structures having varying dimensions |
US20050139865A1 (en) * | 2003-12-31 | 2005-06-30 | Dongbuanam Semiconductor Inc. | Semiconductor device and fabricating method thereof |
US20060226559A1 (en) * | 2005-04-11 | 2006-10-12 | Texas Instruments Incorporated | Nitridation of sti liner oxide for modulating inverse width effects in semiconductor devices |
US7141486B1 (en) | 2005-06-15 | 2006-11-28 | Agere Systems Inc. | Shallow trench isolation structures comprising a graded doped sacrificial silicon dioxide material and a method for forming shallow trench isolation structures |
US20070066074A1 (en) * | 2005-09-19 | 2007-03-22 | Nace Rossi | Shallow trench isolation structures and a method for forming shallow trench isolation structures |
US20070166952A1 (en) * | 2005-12-27 | 2007-07-19 | Dongbu Electronics Co., Ltd. | Dual isolation structure of semiconductor device and method of forming the same |
US20070210390A1 (en) * | 2006-03-10 | 2007-09-13 | Sukesh Sandhu | Method of making an isolation trench and resulting isolation trench |
US20090278227A1 (en) * | 2008-05-08 | 2009-11-12 | Micron Technology, Inc. | Isolation trench structure |
US20100062580A1 (en) * | 2006-04-20 | 2010-03-11 | Micron Technology, Inc. | Fabrication processes for forming dual depth trenches using a dry etch that deposits a polymer |
US20110183482A1 (en) * | 2006-03-22 | 2011-07-28 | Samsung Electronics Co., Ltd. | Transistors with laterally extended active regions and methods of fabricating same |
US20170133264A1 (en) * | 2015-11-05 | 2017-05-11 | Samsung Electronics Co., Ltd. | Semiconductor Device and Method for Fabricating the Same |
Families Citing this family (25)
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KR100466188B1 (en) * | 2002-05-29 | 2005-01-13 | 주식회사 하이닉스반도체 | Method of manufacturing for floating gate in flash memory cell |
KR100469763B1 (en) * | 2003-02-03 | 2005-02-02 | 매그나칩 반도체 유한회사 | Method for forming isolation of semiconductor device |
KR100538810B1 (en) * | 2003-12-29 | 2005-12-23 | 주식회사 하이닉스반도체 | Method of isolation in semiconductor device |
JPWO2005069377A1 (en) * | 2004-01-19 | 2007-07-26 | 松下電器産業株式会社 | Solid-state imaging device and manufacturing method thereof |
JP4564272B2 (en) * | 2004-03-23 | 2010-10-20 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
JP2005277196A (en) * | 2004-03-25 | 2005-10-06 | Elpida Memory Inc | Method for manufacturing semiconductor device |
KR100575339B1 (en) * | 2004-10-25 | 2006-05-02 | 에스티마이크로일렉트로닉스 엔.브이. | Method of manufacturing a flash memory device |
US7402886B2 (en) * | 2004-11-23 | 2008-07-22 | Sandisk Corporation | Memory with self-aligned trenches for narrow gap isolation regions |
US7381615B2 (en) * | 2004-11-23 | 2008-06-03 | Sandisk Corporation | Methods for self-aligned trench filling with grown dielectric for high coupling ratio in semiconductor devices |
DE102004060821B4 (en) * | 2004-12-17 | 2011-04-28 | Telefunken Semiconductors Gmbh & Co. Kg | Method for producing a deep trench structure in an STI structure of a semiconductor body |
US7087531B1 (en) * | 2005-01-17 | 2006-08-08 | International Business Machines Corporation | Shallow trench isolation formation |
JP2008071827A (en) * | 2006-09-12 | 2008-03-27 | Toshiba Corp | Nonvolatile semiconductor memory and method for manufacturing the same |
US20080157169A1 (en) * | 2006-12-28 | 2008-07-03 | Yuan Jack H | Shield plates for reduced field coupling in nonvolatile memory |
US20080160680A1 (en) * | 2006-12-28 | 2008-07-03 | Yuan Jack H | Methods of fabricating shield plates for reduced field coupling in nonvolatile memory |
US7923767B2 (en) * | 2007-12-26 | 2011-04-12 | Sandisk Corporation | Non-volatile storage with substrate cut-out and process of fabricating |
JP5417748B2 (en) * | 2008-06-23 | 2014-02-19 | 富士通セミコンダクター株式会社 | Manufacturing method of semiconductor device |
US8415729B2 (en) * | 2011-04-07 | 2013-04-09 | Nanya Technology Corp. | Power device with trenched gate structure and method of fabricating the same |
US8623713B2 (en) * | 2011-09-15 | 2014-01-07 | International Business Machines Corporation | Trench isolation structure |
US20130187159A1 (en) * | 2012-01-23 | 2013-07-25 | Infineon Technologies Ag | Integrated circuit and method of forming an integrated circuit |
US8673738B2 (en) | 2012-06-25 | 2014-03-18 | International Business Machines Corporation | Shallow trench isolation structures |
JP6362449B2 (en) * | 2014-07-01 | 2018-07-25 | ルネサスエレクトロニクス株式会社 | Manufacturing method of semiconductor integrated circuit device |
US9123773B1 (en) * | 2014-08-15 | 2015-09-01 | Globalfoundries Inc. | T-shaped single diffusion barrier with single mask approach process flow |
KR102319200B1 (en) * | 2015-11-05 | 2021-10-28 | 삼성전자주식회사 | Semiconductor device and method for fabricating the same |
CN111370475A (en) * | 2018-12-25 | 2020-07-03 | 广东美的白色家电技术创新中心有限公司 | Trench gate IGBT and device |
US11659709B2 (en) * | 2020-08-21 | 2023-05-23 | Globalfoundries Singapore Pte. Ltd. | Single well one transistor and one capacitor nonvolatile memory device and integration schemes |
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JPS5831531A (en) | 1981-08-19 | 1983-02-24 | Hitachi Ltd | Etching method |
JPS5832430A (en) | 1981-08-21 | 1983-02-25 | Toshiba Corp | Manufacture of semiconductor device |
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JPS63115348A (en) | 1986-11-04 | 1988-05-19 | Hitachi Ltd | Element isolation |
JPH1174339A (en) | 1997-08-28 | 1999-03-16 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
US5895253A (en) | 1997-08-22 | 1999-04-20 | Micron Technology, Inc. | Trench isolation for CMOS devices |
US6137152A (en) | 1998-04-22 | 2000-10-24 | Texas Instruments - Acer Incorporated | Planarized deep-shallow trench isolation for CMOS/bipolar devices |
US6165871A (en) | 1999-07-16 | 2000-12-26 | Chartered Semiconductor Manufacturing Ltd. | Method of making low-leakage architecture for sub-0.18 μm salicided CMOS device |
KR20010004277A (en) | 1999-06-28 | 2001-01-15 | 김영환 | Method of forming a isolation layer in a semiconductor device |
US6175144B1 (en) | 1998-05-15 | 2001-01-16 | Advanced Micro Devices, Inc. | Advanced isolation structure for high density semiconductor devices |
US6177317B1 (en) * | 1999-04-14 | 2001-01-23 | Macronix International Co., Ltd. | Method of making nonvolatile memory devices having reduced resistance diffusion regions |
KR20010008601A (en) | 1999-07-02 | 2001-02-05 | 김영환 | Method For Forming The Isolation Layer Of Semiconductor Device |
US6207532B1 (en) | 1999-09-30 | 2001-03-27 | Taiwan Semiconductor Manufacturing Company | STI process for improving isolation for deep sub-micron application |
KR20010036818A (en) | 1999-10-12 | 2001-05-07 | 윤종용 | Method for forming a T-shaped trench isolation |
US6242788B1 (en) | 1997-08-01 | 2001-06-05 | Nippon Steel Corporation | Semiconductor device and a method of manufacturing the same |
US20020031896A1 (en) * | 2000-07-07 | 2002-03-14 | Mitsubishi Denki Kabushiki Kaisha | Method for fabricating semiconductor device having trench isolations |
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-
2001
- 2001-08-13 JP JP2001245209A patent/JP2003060024A/en not_active Withdrawn
-
2002
- 2002-05-02 US US10/136,404 patent/US6849919B2/en not_active Expired - Fee Related
- 2002-05-08 TW TW091109563A patent/TW541649B/en not_active IP Right Cessation
- 2002-05-09 KR KR10-2002-0025454A patent/KR100491550B1/en not_active IP Right Cessation
- 2002-05-10 DE DE10220898A patent/DE10220898A1/en not_active Withdrawn
-
2005
- 2005-01-12 US US11/033,322 patent/US7268056B2/en not_active Expired - Fee Related
-
2007
- 2007-07-06 US US11/822,467 patent/US7326627B2/en not_active Expired - Fee Related
- 2007-07-06 US US11/822,470 patent/US7808031B2/en not_active Expired - Fee Related
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JPS5831531A (en) | 1981-08-19 | 1983-02-24 | Hitachi Ltd | Etching method |
JPS5832430A (en) | 1981-08-21 | 1983-02-25 | Toshiba Corp | Manufacture of semiconductor device |
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US6207532B1 (en) | 1999-09-30 | 2001-03-27 | Taiwan Semiconductor Manufacturing Company | STI process for improving isolation for deep sub-micron application |
KR20010036818A (en) | 1999-10-12 | 2001-05-07 | 윤종용 | Method for forming a T-shaped trench isolation |
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Cited By (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020056886A1 (en) * | 2000-11-13 | 2002-05-16 | Sanyo Electric Co.,Ltd. | Semiconductor device having element isolation trench and method of fabricating the same |
US7224038B2 (en) * | 2000-11-13 | 2007-05-29 | Sanyo Electric Co., Ltd. | Semiconductor device having element isolation trench and method of fabricating the same |
US20050008314A1 (en) * | 2000-11-24 | 2005-01-13 | John Paul Drake | Fabrication of integrated circuit |
US20050059220A1 (en) * | 2003-09-17 | 2005-03-17 | Oki Electric Co., Ltd. | Semiconductor device and method of manufacturing the same |
US20070085139A1 (en) * | 2003-09-17 | 2007-04-19 | Oki Electric Industry Co., Ltd. | Semiconductor device |
US20050079722A1 (en) * | 2003-10-10 | 2005-04-14 | Hsu-Sheng Yu | Methods of simultaneously fabricating isolation structures having varying dimensions |
US6995095B2 (en) * | 2003-10-10 | 2006-02-07 | Macronix International Co., Ltd. | Methods of simultaneously fabricating isolation structures having varying dimensions |
US20050139865A1 (en) * | 2003-12-31 | 2005-06-30 | Dongbuanam Semiconductor Inc. | Semiconductor device and fabricating method thereof |
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Also Published As
Publication number | Publication date |
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US7268056B2 (en) | 2007-09-11 |
TW541649B (en) | 2003-07-11 |
KR20030015121A (en) | 2003-02-20 |
KR100491550B1 (en) | 2005-05-27 |
US20070269949A1 (en) | 2007-11-22 |
US7808031B2 (en) | 2010-10-05 |
US20030030089A1 (en) | 2003-02-13 |
US20080017903A1 (en) | 2008-01-24 |
DE10220898A1 (en) | 2003-03-13 |
JP2003060024A (en) | 2003-02-28 |
US20050124107A1 (en) | 2005-06-09 |
US7326627B2 (en) | 2008-02-05 |
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