US7005697B2 - Method of forming a non-volatile electron storage memory and the resulting device - Google Patents
Method of forming a non-volatile electron storage memory and the resulting device Download PDFInfo
- Publication number
- US7005697B2 US7005697B2 US10/175,861 US17586102A US7005697B2 US 7005697 B2 US7005697 B2 US 7005697B2 US 17586102 A US17586102 A US 17586102A US 7005697 B2 US7005697 B2 US 7005697B2
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- insulating layer
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- semiconductor device
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- 238000003860 storage Methods 0.000 title claims description 21
- 238000000034 method Methods 0.000 title abstract description 11
- 230000015654 memory Effects 0.000 title description 35
- 239000002159 nanocrystal Substances 0.000 claims abstract description 47
- 239000004065 semiconductor Substances 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 229910000510 noble metal Inorganic materials 0.000 claims abstract description 16
- 238000010893 electron trap Methods 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 19
- 239000000377 silicon dioxide Substances 0.000 claims description 14
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 12
- 239000003989 dielectric material Substances 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 10
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- 239000011324 bead Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 229920005591 polysilicon Polymers 0.000 claims description 7
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 7
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000010948 rhodium Substances 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052703 rhodium Inorganic materials 0.000 claims description 5
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 3
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 3
- 229910052454 barium strontium titanate Inorganic materials 0.000 claims description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- 230000005641 tunneling Effects 0.000 claims 5
- 230000005055 memory storage Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 229910052710 silicon Inorganic materials 0.000 description 22
- 239000010703 silicon Substances 0.000 description 22
- 238000012545 processing Methods 0.000 description 17
- 230000002093 peripheral effect Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- -1 BaSrTiO3 Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000007943 implant Substances 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- JBBQCTPRTVBNQD-UHFFFAOYSA-N CC1=C(C(C=C1)([Pt+2]C)C)C Chemical compound CC1=C(C(C=C1)([Pt+2]C)C)C JBBQCTPRTVBNQD-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241000699670 Mus sp. Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910002370 SrTiO3 Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42332—Gate electrodes for transistors with a floating gate with the floating gate formed by two or more non connected parts, e.g. multi-particles flating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/02—Structural aspects of erasable programmable read-only memories
- G11C2216/06—Floating gate cells in which the floating gate consists of multiple isolated silicon islands, e.g. nanocrystals
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/943—Information storage or retrieval using nanostructure
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Nanotechnology (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
Claims (38)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/175,861 US7005697B2 (en) | 2002-06-21 | 2002-06-21 | Method of forming a non-volatile electron storage memory and the resulting device |
US11/296,385 US20060081911A1 (en) | 2002-06-21 | 2005-12-08 | Method of forming a non-volatile electron storage memory and the resulting device |
US13/234,836 US8541821B2 (en) | 2002-06-21 | 2011-09-16 | Method of forming a non-volatile electron storage memory and the resulting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/175,861 US7005697B2 (en) | 2002-06-21 | 2002-06-21 | Method of forming a non-volatile electron storage memory and the resulting device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/296,385 Division US20060081911A1 (en) | 2002-06-21 | 2005-12-08 | Method of forming a non-volatile electron storage memory and the resulting device |
Publications (2)
Publication Number | Publication Date |
---|---|
US20030235064A1 US20030235064A1 (en) | 2003-12-25 |
US7005697B2 true US7005697B2 (en) | 2006-02-28 |
Family
ID=29733994
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
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US10/175,861 Expired - Lifetime US7005697B2 (en) | 2002-06-21 | 2002-06-21 | Method of forming a non-volatile electron storage memory and the resulting device |
US11/296,385 Abandoned US20060081911A1 (en) | 2002-06-21 | 2005-12-08 | Method of forming a non-volatile electron storage memory and the resulting device |
US13/234,836 Expired - Lifetime US8541821B2 (en) | 2002-06-21 | 2011-09-16 | Method of forming a non-volatile electron storage memory and the resulting device |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/296,385 Abandoned US20060081911A1 (en) | 2002-06-21 | 2005-12-08 | Method of forming a non-volatile electron storage memory and the resulting device |
US13/234,836 Expired - Lifetime US8541821B2 (en) | 2002-06-21 | 2011-09-16 | Method of forming a non-volatile electron storage memory and the resulting device |
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US (3) | US7005697B2 (en) |
Cited By (64)
Publication number | Priority date | Publication date | Assignee | Title |
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US20030193270A1 (en) * | 2002-04-11 | 2003-10-16 | Samsung Electro-Mechanics Co., Ltd. | Piezoelectric transformer device and housing for piezoelectric transformer and method of manufacturing them |
US20050202615A1 (en) * | 2004-03-10 | 2005-09-15 | Nanosys, Inc. | Nano-enabled memory devices and anisotropic charge carrying arrays |
US20060077728A1 (en) * | 2003-11-25 | 2006-04-13 | Jason Chen | Method for fabricating flash memory device and structure thereof |
US20060081911A1 (en) * | 2002-06-21 | 2006-04-20 | Micron Technology, Inc. | Method of forming a non-volatile electron storage memory and the resulting device |
US20060118853A1 (en) * | 2004-12-06 | 2006-06-08 | Asahi Glass Company, Limited | Nonvolatile semiconductor memory device having excellent charge retention and manufacturing process of the same |
US20060170033A1 (en) * | 2005-02-03 | 2006-08-03 | Samsung Electronics Co., Ltd. | Nonvolatile memory device and method of manufacturing the same |
US20060192242A1 (en) * | 2005-02-25 | 2006-08-31 | Micron Technology, Inc. | Low power memory subsystem with progressive non-volatility |
US20060205132A1 (en) * | 2004-11-23 | 2006-09-14 | Micron Technology, Inc. | Scalable integrated logic and non-volatile memory |
US20060216928A1 (en) * | 2001-12-07 | 2006-09-28 | Hua Chung | Cyclical deposition of refractory metal silicon nitride |
US20060252211A1 (en) * | 2002-07-30 | 2006-11-09 | Micron Technology, Inc. | ATOMIC LAYER DEPOSITED NANOLAMINATES OF HfO2/ZrO2 FILMS AS GATE DIELECTRICS |
US20060267095A1 (en) * | 2005-05-31 | 2006-11-30 | Sanyo Electric Co., Ltd. | Semiconductor device |
US20070045718A1 (en) * | 2005-08-31 | 2007-03-01 | Micron Technology, Inc. | Band engineered nano-crystal non-volatile memory device utilizing enhanced gate injection |
US20070054487A1 (en) * | 2005-09-06 | 2007-03-08 | Applied Materials, Inc. | Atomic layer deposition processes for ruthenium materials |
US20070054453A1 (en) * | 2005-09-06 | 2007-03-08 | Gyoung-Ho Buh | Methods of forming integrated circuit memory devices having a charge storing layer formed by plasma doping |
US20070077750A1 (en) * | 2005-09-06 | 2007-04-05 | Paul Ma | Atomic layer deposition processes for ruthenium materials |
US20070128796A1 (en) * | 2005-12-05 | 2007-06-07 | Chih-Hsun Chu | Method for manufacturing non-volatile memory |
US20070187768A1 (en) * | 2004-03-10 | 2007-08-16 | Nanosys, Inc. | Nano-Enabled Memory Devices and Anisotropic Charge Carrying Arrays |
US20070200186A1 (en) * | 2006-02-28 | 2007-08-30 | Sanyo Electric Co., Ltd. | Semiconductor device |
US20080003711A1 (en) * | 2006-07-03 | 2008-01-03 | Samsung Electronics Co., Ltd. | Method of fabricating nonvolatile memory device |
WO2008005892A2 (en) * | 2006-06-30 | 2008-01-10 | Applied Materials, Inc. | Nanocrystal formation |
US20080121976A1 (en) * | 2006-08-03 | 2008-05-29 | Micron Technology, Inc. | Non-volatile memory cell devices and methods |
US20080121969A1 (en) * | 2006-08-03 | 2008-05-29 | Micron Technology, Inc. | Non-volatile memory cell device and methods |
US20080150003A1 (en) * | 2006-12-20 | 2008-06-26 | Jian Chen | Electron blocking layers for electronic devices |
US20080150004A1 (en) * | 2006-12-20 | 2008-06-26 | Nanosys, Inc. | Electron Blocking Layers for Electronic Devices |
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US8541821B2 (en) | 2013-09-24 |
US20120028429A1 (en) | 2012-02-02 |
US20030235064A1 (en) | 2003-12-25 |
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