US7101805B2 - Envelope follower end point detection in time division multiplexed processes - Google Patents
Envelope follower end point detection in time division multiplexed processes Download PDFInfo
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- US7101805B2 US7101805B2 US10/841,818 US84181804A US7101805B2 US 7101805 B2 US7101805 B2 US 7101805B2 US 84181804 A US84181804 A US 84181804A US 7101805 B2 US7101805 B2 US 7101805B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
- B81C1/00563—Avoid or control over-etching
- B81C1/00587—Processes for avoiding or controlling over-etching not provided for in B81C1/00571 - B81C1/00579
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32963—End-point detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
Definitions
- the present invention generally relates to the field of semiconductor wafer processing. More particularly, the present invention is directed to determining the endpoint of etching processes during a time division multiplexed etching and deposition process.
- MEMS micro-electro-mechanical
- SOI Silicon on Insulator
- Si silicon
- SiO 2 silicon dioxide
- Allowing the etch process to proceed beyond the time when the first layer has been removed can result in reduced thickness of the underlying stop layer, or feature profile degradation (known in the art as “notching” for SOI applications).
- OES analyzes the light emitted from a plasma source to draw inferences about the chemical and physical state of the plasma process. In semiconductor processing this technique is commonly used to detect material interfaces during plasma etch processes.
- the OES technique involves monitoring the radiation emitted by the plasma, usually in the ultra violet/visible range (200 nm–1100 nm) portion of the light spectrum.
- FIG. 1 shows a schematic view of a typical OES configuration.
- the composition of the plasma, and in particular the presence of reactive etch species or etch by-products, will determine the spectra (i.e., intensity vs. wavelength) of the emitted radiation.
- the composition of the plasma changes, resulting in a change in the emission spectrum.
- an OES endpoint system By continuously monitoring the plasma emission, it is possible for an OES endpoint system to detect that change and use it to determine when the film has completely cleared. For example, when the OES signal drops below a pre-determined threshold level, this transition is used to trigger “endpoint”. In practice, most of the information relating to endpoint is usually contained within a few wavelengths that correspond to reactants consumed or the etch by-products that are generated during the etch.
- a common method to develop an OES endpoint strategy is to collect a number of spectra of the plasma emission (emission intensity v. wavelength) during both pre-endpoint and post-endpoint conditions.
- Endpoint wavelength candidate regions can be determined using a number of methods. Spectral regions for endpoint detection can be chosen through statistical methods such as factor analysis or principal component analysis (see U.S. Pat. No. 5,658,423 to Angell et al.).
- Another strategy to determine endpoint candidates is through the construction of a difference plot between pre-endpoint (main etch) and post-endpoint (over etch) spectra. Once candidate regions have been selected, assignments of likely chemical species are made for the candidate regions (i.e., reactant species from dissociated gas precursors or etch products).
- TDM time division multiplexed
- FIGS. 2( a ) to 2 ( d ) are pictorial examples of one type of the TDM process for deep silicon etching.
- the TDM Si etch process is typically carried out in a reactor configured with a high-density plasma source, typically an Inductively Coupled Plasma (ICP), in conjunction with a radio frequency (RF) biased substrate electrode.
- ICP Inductively Coupled Plasma
- RF radio frequency biased substrate electrode.
- the most common process gases used in the TDM etch process for Si are sulfur hexafluoride (SF 6 ) and octofluorocyclobutane (C 4 F 8 ).
- SF 6 is typically used as the etch gas and C 4 F 8 as the deposition gas.
- SF 6 facilitates spontaneous and isotropic etching of Si ( FIGS.
- C 4 F 8 facilitates protective polymer deposition onto the sidewalls as well as the bottom of etched structures ( FIG. 2( c )).
- the TDM Si etch process cyclically alternates between etch and deposition process steps enabling high aspect ratio structures to be defined into a masked Si substrate. Upon energetic and directional ion bombardment to the Si substrate, which is present in etch steps, the polymer film coated in the bottom of etched structures from the previous deposition step will be removed to expose the Si surface for further etching ( FIG. 2( d )).
- FIG. 2( e ) shows a scanning electron microscope (SEM) image of a cross section of a silicon structure etched using a TDM process.
- the plasma emission spectra of etch 300 and deposition 305 steps in a TDM Si etch process are dramatically different due to the different plasma conditions that exist in the deposition and etch steps (e.g., process gas types, pressures, RF powers, etc.).
- FIG. 4 applying conventional OES methods to a TDM silicon etch process results in an end point trace 400 that is periodic, and cannot be used to detect endpoint.
- the majority of the etch endpoint information is contained within the etch segments of the process.
- U.S. Pat. No. 6,200,822 to Becker et al. shows a method to extract endpoint information from the plasma emission of a TDM Si etch process.
- Becker et al. examine the emission intensity of at least one species (typically F or SiF for an Si etch) in the plasma only during the etch step through the use of an externally supplied trigger (typically the transition from one process step to the next).
- an external trigger typically the transition from one process step to the next.
- the emission intensity observed in subsequent etch steps can be stitched together to obtain an emission signal that is not periodic in nature.
- the value of the emission intensity for the species in the etch step is held at the last known value during the ensuing deposition step.
- the periodic emission signal is converted into a curve similar to a step function that can be used for process endpoint determination.
- the limitations of this approach are the need for an externally supplied trigger, in addition to the need for a user input delay between the trigger and acquiring the emission data during etch steps.
- U.S. Pat. No. 4,491,499 to Jerde et al. disclose measuring a narrow band of the emission spectrum while simultaneously measuring the intensity of a wider background band centered about the narrow band. In this manner the background signal can be subtracted from the endpoint signal resulting in a more accurate value of the narrow band signal.
- Another object of the present invention is to provide a method for etching a feature in a substrate comprising the steps of: subjecting the substrate to an alternating process within a plasma chamber; monitoring a variation in plasma emission intensity; extracting an amplitude information from said plasma emission intensity using an envelope follower algorithm; and discontinuing said alternating process at a time based on said monitoring step.
- Yet another object of the present invention is to provide a method of establishing endpoint during a time division multiplex process comprising the steps of: subjecting a substrate to the time division multiplex process; monitoring an attribute of a signal generated from the time division multiplex process; processing said attribute of the periodic signal generated from the time division multiplex process using an envelope follower; and discontinuing the time division multiplex process at a time based on the processing step.
- Still yet another object of the present invention is to provide a method for establishing endpoint during a time division multiplexed process, the method comprising the steps of: etching a surface of a substrate in an etching step by contact with a reactive etching gas to removed material from the surface of the substrate and provide exposed surfaces; passivating the surface of the substrate in a passivating step during which the surfaces that were exposed in the preceding etching step are covered by a passivation layer thereby forming a temporary etching stop; alternatingly repeating the etching step and the passivating step; analyzing an intensity of at least one wavelength region of a plasma emission through the use of an envelope follower algorithm; and discontinuing the time division multiplexed process at a time which is dependent on said analysis step.
- Another object of the present invention is to provide a method of establishing endpoint during a time division multiplex process comprising the steps of: subjecting a substrate to the time division multiplex process; monitoring an attribute of a signal generated from the time division multiplex process; processing said attribute of the periodic signal generated from the time division multiplex process using a peak-hold and decay algorithm; and discontinuing the time division multiplex process at a time based on the processing step.
- this invention comprises a method and an apparatus for establishing endpoint during an alternating cyclical etch process or time division multiplexed process.
- the plasma emission intensity of the process can be periodic.
- a feature of the present invention is to provide a method for etching a feature in a substrate.
- the substrate to be etched can contain silicon or a group-III element and/or a group-V element such as Gallium Arsenide.
- the method comprising the following steps.
- the substrate is placed within a plasma chamber and subjected to an alternating process.
- the alternating process can comprise only etch steps, only deposition steps, at least one etch step and at least one deposition step, or a plurality of etching steps and a plurality of deposition steps.
- at least one process parameter can vary over time within the alternating cyclical process.
- a variation in plasma emission intensity is monitored using known optical emission spectrometry techniques. The monitoring can be of a plurality of regions of plasma emission intensity.
- the plurality of regions of plasma emission intensity can be chosen using a statistical method such as factor analysis or through an off-line analysis.
- the off-line analysis can be determined by the use of spectra differencing.
- the plurality of regions of plasma emission intensity can be background corrected.
- Mathematical operations can be performed on multiple regions of plasma emission intensity.
- An amplitude information is extracted from a complex waveform of the plasma emission intensity using an envelope follower algorithm.
- the envelope follower algorithm can use a plurality of peak detect algorithms and can be reset sequentially in a round robin fashion. Further, the reset can be based a clock period that is longer than the half period of the lowest frequency of interest.
- the alternating process is discontinued when endpoint is reached at a time that is based on the monitoring step.
- Yet another feature of the present invention is to provide a method of establishing endpoint during a time division multiplex process.
- the method comprising the following steps.
- a substrate is subjected to the time division multiplex process within a vacuum chamber.
- An attribute, such as emission intensity or plasma impedance, of a periodic signal that is generated by the time division multiplex process is monitored using known optical emission spectrometry techniques.
- the monitoring can be of a plurality of regions of plasma emission intensity.
- the plurality of regions of plasma emission intensity can be chosen using a statistical method such as factor analysis or through an off-line analysis.
- the off-line analysis can be determined by the use of spectra differencing.
- the plurality of regions of plasma emission intensity can be background corrected. Mathematical operations can be performed on multiple regions of plasma emission intensity.
- the attribute of the periodic signal that is generated by the time division multiplex process is processed using an envelope follower algorithm.
- the envelope follower algorithm can use a plurality of peak detect algorithms, can be reset sequentially in a round robin fashion, and can be processed in parallel. Further, the reset can be based a clock period that is at least half the process period of the time division multiplex process.
- further processing can be conducted on the extracted amplitude detection signal, including digital signal processing that is filtered using an infinite impulse response filter or a finite impulse response filter.
- the time division multiplex process is discontinued when endpoint is reached at a time that is based on the processing step.
- Still yet another feature of the present invention is to provide a method for establishing endpoint during a time division multiplexed process.
- the method comprising the following steps.
- a substrate is subjected to time division multiplexed process within a vacuum chamber.
- a surface of the substrate is anisotropically etched in an etching step by contact with a reactive etching gas to removed material from the surface of the substrate and provide exposed surfaces.
- the surface of the substrate is passivated during a passivating step where the surfaces that were exposed in the preceding etching step are covered by a passivation layer thereby forming a temporary etching stop.
- the etching step and the passivating step are alternatingly repeated for the length of the time division multiplexed process.
- the intensity of at least one wavelength region of the plasma emission is monitored using known optical emission spectrometry techniques and analyzed through the use of an envelope follower algorithm.
- the time division multiplexed process is discontinued when endpoint is reached at a time that is based on the analysis step.
- Another feature of the present invention is to provide a method of establishing endpoint during a time division multiplex process.
- the method comprising the following steps.
- a substrate is subjected to the time division multiplex process within a vacuum chamber.
- An attribute, such as emission intensity or plasma impedance, of a periodic signal that is generated by the time division multiplex process is monitored using known optical emission spectrometry techniques.
- the monitoring can be of a plurality of regions of plasma emission intensity.
- the plurality of regions of plasma emission intensity can be chosen using a statistical method such as factor analysis or through an off-line analysis.
- the off-line analysis can be determined by the use of spectra differencing.
- the plurality of regions of plasma emission intensity can be background corrected. Mathematical operations can be performed on multiple regions of plasma emission intensity.
- the attribute of the periodic signal that is generated by the time division multiplex process is processed using a peak-hold and decay algorithm.
- the peak-hold and decay algorithm can use a linear decay algorithm or a non-linear decay algorithm.
- further processing can be conducted on the extracted amplitude detection signal, including digital signal processing that is filtered using an infinite impulse response filter or a finite impulse response filter.
- the time division multiplex process is discontinued when endpoint is reached at a time that is based on the processing step.
- FIG. 1 is a schematic view of a typical optical emission spectroscopy configuration
- FIG. 2 is a pictorial example of one type of the TDM process for deep silicon etching
- FIG. 3 is a graph of the intensity versus wavelength for Deposition and Etch Plasma Emission Spectra for a deep silicon etch process
- FIG. 4 is a graph of the Plasma Emission Intensity versus Time for a typical deep silicon etch process focusing on the emission spectra around the 440 nm peak;
- FIG. 5 is a block diagram of the improved OES technique for TDM processes
- FIG. 7 is a graph of the Difference (Post etch-Pre etch) Plasma Emission Intensity versus wavelength for a deep silicon etch process to determine endpoint candidates;
- FIG. 8 is a graph of the Plasma Emission Intensity versus wavelength around the 440 nm region for the etch portion of a deep silicon etch process
- FIG. 9 is a graph of Plasma Emission Intensity versus Time focusing on the Signal (440 nm) and Background (445 nm) for a deep silicon etch process;
- FIG. 10 is a graph of Plasma Emission Intensity versus Time focusing on the Signal (440 nm) and Background (445 nm) for a deep silicon etch process and showing the ratio of the 440 nm signal to the 445 nm background;
- FIG. 11 is a graph of the Corrected Plasma Emission Intensity versus Time obtained from the ratio of the 440 nm signal to the 445 nm background over the course of the etch;
- FIG. 12 is a flowchart for the envelope follower TDM endpoint algorithm
- FIG. 13 is a graph of the Corrected Plasma Emission Intensity versus Time for a deep silicon etch process using the data from FIG. 11 after a finite response filter has been applied;
- FIG. 14 is a graph of Corrected Plasma Emission Intensity versus Time using an envelope follower algorithm with peak-hold and reset applied to the filtered input data of FIG. 13 ;
- FIG. 15 is a graph of Corrected Plasma Emission Intensity versus Time using an envelope follower algorithm with multiple peak-holds and sequential resets applied to the filtered input data of FIG. 13 ;
- FIG. 16 is a graph of Corrected Plasma Emission Intensity versus Time using the envelope follower algorithm to determine the maximum value of the sequential peak hold circuits;
- FIG. 17 is a graph of Corrected Plasma Emission Intensity versus Time using the envelope follower of the present invention applied to a TDM etch process;
- FIG. 18 is a graph of Corrected Plasma Emission Intensity versus Time using the envelope follower signal before and after an FIR filter was applied;
- FIG. 19 is a graph of Corrected Plasma Emission Intensity versus Time showing the initial corrected emission input data with a filtered envelope follower endpoint trace;
- FIG. 20 is a flowchart for the peak-hold and decay TDM endpoint algorithm
- FIG. 21 is a graph of Corrected Plasma Emission Intensity versus Time showing examples of both linear and non-linear decay functions applied to the same input data;
- FIG. 22 is a graph of Corrected Plasma Emission Intensity versus Time showing an example of the peak hold with a linear decay
- FIG. 23 is a graph of Corrected Plasma Emission Intensity versus Time showing the peak hold with linear decay applied to the filtered input data
- FIG. 24 is a graph of Corrected Plasma Emission Intensity versus Time showing the peak-hold with decay signal before and after the FIR filter was applied.
- FIG. 25 is a graph of Corrected Plasma Emission Intensity versus Time showing the initial corrected emission input data with the filtered peak hold decay endpoint trace.
- TDM time division multiplexed
- the process Due to the periodic and repeating nature of a TDM process, by design, the process has a number of characteristic frequencies associated with it. As an example, consider a two step TDM silicon etch process consisting of a five second etch step and a five second deposition step that are subsequently repeated a number of times (see Table 1 below). One characteristic frequency will be 0.1 Hz, determined by the total cycle time (10 seconds).
- FIG. 5 shows an overview of the improved OES technique for TDM processes.
- a TDM process is constructed as is well known in the art. At least one region of the plasma emission spectrum (typically within 200–1100 nm for plasma emission) of the TDM process is identified for process endpoint detection. The spectral region(s) is monitored over time during the course of the TDM etch process. The raw emission signal from a TDM process is periodic in nature.
- the envelope follower technique can be used to extract amplitude information from complex waveforms.
- the envelope follower algorithm consists of two or more peak-hold routines operating in parallel that are sequentially reset in a round-robin fashion.
- a second technique consists of a peak-hold algorithm in conjunction with a decay algorithm.
- the peak-hold algorithm is applied to the input data.
- the input data value is compared to the peak-hold value. If the input value is less than the held peak value, the peak value is allowed to decrease over time following a user defined function.
- the decay function can be either linear or non-linear.
- An alternate embodiment of the invention filters the raw data prior to applying the endpoint detection algorithm.
- filtering include, but are not limited to, finite impulse response (FIR) and infinite impulse response (IIR) filters.
- the resulting endpoint trace can be filtered to improve the signal to noise characteristics of the final signal.
- FIR, IIR and other filters may be applied.
- the approach is not limited to a two step cyclical process. In practice it is common to further subdivide the etch portion of the process into a number of sub-steps.
- process parameters within each repetitive loop are not required to remain constant cycle to cycle.
- process morphing it is common during the TDM etching of silicon to gradually decrease the efficiency of the deposition step over the course of the process to maintain profile control (known in the art as process morphing).
- process morphed process small parameter changes are made between some number of etch or deposition steps including, but not limited to, RF bias power, process pressure, ICP power, etc. These changes can also include changing the duration time of the process steps within a TDM cycle.
- a third method to determine a material transition in a TDM process is to filter the data using an FIR, IIR or similar filter without a peak detection algorithm. Contrary to the teachings of Litvak et al. in WO 91/18283 the filters do not need to be applied over an integral number of plasma modulation cycles in order to be effective.
- a TDM recipe was used to etch a silicon on insulator (SOI) wafer.
- the recipe is listed in Table 2 below.
- the example below applies the invention to a 3-step TDM Si etch process.
- FIG. 6 focuses on the emission spectra from the Etch B step before 600 and after 605 the silicon has cleared. Note the slight difference in etch spectra near 450 nm.
- a difference spectrum was constructed point-by-point. The resultant spectrum is shown in FIG. 7 . Candidates for endpoint detection occur at 440 nm ( 700 ) and 686 nm ( 705 ).
- the 440 nm peak is assignable to SiF emission (etch product—decreases as the Si is cleared) while the 686 nm peak is assignable to F emission (reactant—increases as the Si is cleared).
- etch product decreases as the Si is cleared
- F emission reactant—increases as the Si is cleared
- FIG. 8 shows a magnified view of the pre-endpoint 800 and post-end point 805 Etch B emission spectra in order to more closely examine the 440 nm peak.
- two spectral regions were monitored, i.e., a narrow 440 nm peak 810 (SiF emission) and a broader spectral region centered around 445 nm 815 for background correction.
- FIG. 9 shows a magnified view of the emission intensities at 440 nm and 445 nm over the range of 300 to 400 seconds of total etch time.
- the signal 900 (440 nm) and background 905 (445 nm) regions track each other well (equal or parallel) during the higher intensity deposition step, but diverge near the end of the Etch B step 910 .
- Constructing the ratio of the 440 nm signal (designated R 1 ) to the 445 nm background (designated R 3 ) results in the data shown in FIG. 10 . Note the periodic and repeating nature of the ratio signal 1000 .
- FIG. 11 shows the background corrected signal (ratio of 440 nm SiF/445 nm background) over the course of the etch. Note the marked decrease in successive peak heights 1100 near 600 seconds.
- FIG. 12 shows a flowchart for the envelope follower TDM endpoint algorithm. Once the data has been acquired, it can be filtered prior to applying the envelope follower.
- FIG. 13 shows the data 1300 from FIG. 11 after a finite response filter (5 point moving average) has been applied 1305 .
- FIGS. 14 and 15 show the first step of the envelope follower algorithm of the present invention.
- FIG. 14 is a graph of a peak-hold algorithm 1400 with reset 1410 applied to the filtered input data 1405 of FIG. 13 .
- FIG. 15 is a graph of the envelope follower algorithm using multiple peak-holds ( 1500 and 1505 ) with sequential resets applied to the filtered input data 1510 of FIG. 13 .
- the data for FIGS. 14 and 15 were acquired at 1 Hz.
- the next step of the envelope follower algorithm determines the maximum value 1600 of the sequential peak hold circuits 1610 (see FIG. 16 ).
- FIG. 17 shows the resultant envelope follower 1700 for the process. Note the drop in magnitude 1705 near 550 seconds.
- FIG. 18 shows the envelope follower signal before 1800 and after 1805 an FIR filter (45 seconds moving average) was applied.
- FIG. 19 shows the initial corrected emission input data with the filtered envelope follower endpoint trace 1905 .
- the filtered envelope follower trace can subsequently be further processed using commonly known techniques (such as threshold crossing detection or derivative processing) to determine the time at which “endpoint” occurs.
- FIG. 20 shows a flowchart for the peak-hold and decay TDM endpoint algorithm.
- FIG. 21 shows examples of both linear 2100 and non-linear 2105 decay functions applied to the same input data 2110 .
- FIG. 22 shows an example of the peak hold 2200 with a linear decay of 55 seconds (e.g., the current peak value would decay to a value of zero in 55 sample intervals).
- the data was acquired at 1 Hz.
- FIG. 23 shows the peak hold with linear decay 2300 applied to the filtered input data 2305 .
- a FIR filter was applied after the peak hold decay algorithm.
- FIG. 24 shows the peak-hold with decay signal before 2400 and after 2405 the FIR filter (30 seconds moving average) was applied.
- FIG. 25 shows the initial corrected emission input data 2500 with the filtered peak hold decay endpoint trace 2505 .
- the filtered peak hold decay trace can subsequently be further processed using commonly known techniques (such as threshold crossing detection or derivative processing) to determine the time at which “endpoint” occurs.
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Abstract
Description
TABLE 1 | |||||
Process | Unit of | ||||
Parameter | Measure | Deposition | Etch | ||
SF6 Flow | sccm | 0.5 | 100 | ||
C4F8 Flow | sccm | 70 | 0.5 | ||
Ar Flow | sccm | 40 | 40 | ||
Pressure | mTorr | 22 | 23 | ||
RF | W | 1 | 12 | ||
| W | 1000 | 1000 | ||
Step Time | seconds | 5 | 5 | ||
Note the deposition and etch steps differ in chemistry, RF bias power and pressure resulting in significantly different emission spectra.
TABLE 2 | ||||
Process | Unit of | |||
Parameter | Measure | Deposition | Etch A | Etch B |
SF6 Flow | sccm | 1 | 50 | 100 | |
C4F8 Flow | sccm | 70 | 1 | 1 | |
Ar Flow | sccm | 40 | 40 | 40 | |
Pressure | mTorr | 22 | 23 | 23 | |
RF | W | 1 | 12 | 12 | |
| W | 1500 | 1500 | 1500 | |
Step Time | seconds | 6 | 3 | 7 | |
Claims (47)
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US10/841,818 US7101805B2 (en) | 2003-05-09 | 2004-05-06 | Envelope follower end point detection in time division multiplexed processes |
US11/210,248 US20060006139A1 (en) | 2003-05-09 | 2005-08-23 | Selection of wavelengths for end point in a time division multiplexed process |
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US46933303P | 2003-05-09 | 2003-05-09 | |
US10/841,818 US7101805B2 (en) | 2003-05-09 | 2004-05-06 | Envelope follower end point detection in time division multiplexed processes |
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US11/210,248 Continuation-In-Part US20060006139A1 (en) | 2003-05-09 | 2005-08-23 | Selection of wavelengths for end point in a time division multiplexed process |
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EP (1) | EP1623457B1 (en) |
JP (2) | JP2007501532A (en) |
CN (1) | CN100401491C (en) |
AT (1) | ATE415702T1 (en) |
DE (1) | DE602004017983D1 (en) |
TW (1) | TWI319207B (en) |
WO (1) | WO2004102642A2 (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
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US20060287753A1 (en) * | 2005-06-16 | 2006-12-21 | Jason Plumhoff | Process change detection through the use of evolutionary algorithms |
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US20040238489A1 (en) | 2004-12-02 |
DE602004017983D1 (en) | 2009-01-08 |
WO2004102642A2 (en) | 2004-11-25 |
ATE415702T1 (en) | 2008-12-15 |
TWI319207B (en) | 2010-01-01 |
CN100401491C (en) | 2008-07-09 |
JP2010251813A (en) | 2010-11-04 |
EP1623457B1 (en) | 2008-11-26 |
JP2007501532A (en) | 2007-01-25 |
WO2004102642A3 (en) | 2005-06-23 |
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