US7330076B2 - Reconfigurable distributed active transformers - Google Patents
Reconfigurable distributed active transformers Download PDFInfo
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- US7330076B2 US7330076B2 US11/544,895 US54489506A US7330076B2 US 7330076 B2 US7330076 B2 US 7330076B2 US 54489506 A US54489506 A US 54489506A US 7330076 B2 US7330076 B2 US 7330076B2
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/26—Push-pull amplifiers; Phase-splitters therefor
- H03F3/265—Push-pull amplifiers; Phase-splitters therefor with field-effect transistors only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/42—Amplifiers with two or more amplifying elements having their dc paths in series with the load, the control electrode of each element being excited by at least part of the input signal, e.g. so-called totem-pole amplifiers
- H03F3/423—Amplifiers with two or more amplifying elements having their dc paths in series with the load, the control electrode of each element being excited by at least part of the input signal, e.g. so-called totem-pole amplifiers with MOSFET's
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/602—Combinations of several amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/602—Combinations of several amplifiers
- H03F3/604—Combinations of several amplifiers using FET's
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/372—Noise reduction and elimination in amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/421—Multiple switches coupled in the output circuit of an amplifier are controlled by a circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/534—Transformer coupled at the input of an amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/537—A transformer being used as coupling element between two amplifying stages
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/541—Transformer coupled at the output of an amplifier
Definitions
- the present invention pertains to the field of distributed active transformers. More specifically, the invention relates to distributed active transformers that include features that provide additional control over operational parameters.
- a distributed active transformer includes a primary winding that uses active devices to control the current direction and magnitude on the winding.
- U.S. patent application Ser. No. 09/974,578 filed Oct. 9, 2001, describes distributed active transformers that can comprise at least two push/pull amplifiers designed to amplify an RF input signal.
- the distributed active transformer can be operated where a first amplifier causes current to flow on the primary winding in a first direction, and where a second amplifier causes current to flow on the primary in a second direction. In this manner, an alternating current is induced on the secondary winding.
- a distributed active transformer is provided that overcomes known problems with existing transformers.
- a distributed active transformer is provided that allows sections of the distributed active transformer to be independently controlled.
- a distributed active transformer includes a primary winding having two or more sets of push/pull amplifiers, where each set of push/pull amplifiers is used to create an alternating current on a section of the primary winding.
- a secondary winding is disposed adjacent to the primary winding, such that the alternating current on the primary induces alternating current on the secondary.
- the primary winding and the secondary winding can be disposed on a semiconductor substrate.
- the present invention provides many important technical advantages.
- One important technical advantage of the present invention is a distributed active transformer that allows sections of the distributed active transformer to be independently controlled, so as to adjust the operating parameters of the distributed active transformer.
- FIG. 1 is a diagram of a distributed active transformer in accordance with an exemplary embodiment of the present invention
- FIG. 2 is a diagram of a distributed active transformer with two primary windings in accordance with an exemplary embodiment of the present invention
- FIGS. 3 and 3A are diagrams of a distributed active transformer with first and second primary windings and compensating capacitors in accordance with an exemplary embodiment of the present invention
- FIG. 4 is a diagram of a distributed active transformer with first and second primary windings and compensating capacitors in accordance with another exemplary embodiment of the present invention
- FIG. 5 is a diagram of a distributed active transformer with impedance transformation ratio correction and resonance frequency selection in accordance with an exemplary embodiment of the present invention
- FIG. 6 is a diagram of a distributed active transformer with switched-in capacitors that are in parallel with amplifiers in accordance with an exemplary embodiment of the present invention
- FIG. 7 is a diagram of a distributed active transformer with a low noise amplifier in accordance with an exemplary embodiment of the present invention.
- FIG. 8 is a diagram of a distributed active transformer with a low noise amplifier in accordance with another exemplary embodiment of the present invention.
- FIGS. 1 AND 1A are diagrams of distributed active transformer 100 in accordance with an exemplary embodiment of the present invention.
- Distributed active transformer 100 allows the number of primary sections in the primary winding of a distributed active transformer to be reconfigured.
- Distributed active transformer 100 includes primary winding sections 102 A, 102 B, 102 C, and 102 D, and secondary winding 104 .
- Each primary winding section has an associated push/pull amplifier pair that includes amplifiers 106 A and 108 A for primary winding section 102 A, amplifiers 106 B and 108 B for primary winding section 102 B, amplifiers 106 C and 108 C for primary winding section 102 C, and amplifiers 106 D and 108 D for primary winding section 102 D.
- the amplifiers can be implemented using bipolar junction transistors (BJTs), metal oxide semiconductor field-effect transistors (MOSFETs), hetero-junction bipolar transistors (HBTs), metal-semiconductor field effect transistors (MESFETs), lateral double-diffused metal oxide semiconductor transistors (LDMOSs), complementary MOS transistors (CMOS), or other suitable devices.
- BJTs bipolar junction transistors
- MOSFETs metal oxide semiconductor field-effect transistors
- HBTs hetero-junction bipolar transistors
- MESFETs metal-semiconductor field effect transistors
- LDMOS lateral double-diffused metal oxide semiconductor transistors
- CMOS complementary MOS transistors
- a drain voltage V dd may alternatively be provided at a midway point, corner, or at other suitable locations on each primary winding section to provide the current source or other suitable configurations can be used to create time-varying current on the primary winding sections using the push/pull amplifier pairs.
- a similar configuration is used for primary winding sections 102 B, 102 C, and 102 D.
- Each push/pull amplifier pair of each primary winding section can be controlled so that the current flowing on the primary winding section alternates in direction and magnitude in a manner that creates a magnetic field that induces an electromotive force (EMF) on secondary winding 104 .
- EMF electromotive force
- the EMF causes current to flow in secondary winding 104 , based on the impedance of that winding and any associated circuit.
- the current through the push/pull amplifier pairs can be controlled so as to adjust both the current and the voltage induced in this manner on secondary winding 104 .
- Switches 110 A, 110 B, 110 C, and 110 D can be implemented as transistors, micro-electromechanical devices (MEMS), or other suitable devices, and are connected to a one amplifier out of each set of two adjacent push/pull amplifier pairs, such that the two adjacent push/pull amplifiers can be bypassed and a new push/pull amplifier pair can be created.
- “connect” and its cognate terms such as “connects” or “connected” can refer to a connection through a conductor, a semiconducting material, or other suitable connections.
- amplifiers 106 A and 108 B are connected to switch 110 A, such that the amplifiers can be bypassed by closing switch 110 A.
- amplifiers 106 B and 108 A would then form the push/pull amplifier pair for primary winding sections 102 A and 102 B.
- switches 110 B, 110 C and 110 D a similar configuration can be provided for switches 110 B, 110 C and 110 D.
- each switch can operate to bypass one amplifier from a first push/pull amplifier pair and a second amplifier from a second push/pull amplifier pair so as to result in the remaining amplifiers from those two push/pull amplifier pairs operating as a push/pull amplifier pair on a combined primary winding section.
- the power level generated by distributed active transformer 100 is less than the power level that is generated for distributed active transformer 100 with all switches open.
- the current magnitude through secondary winding 104 will be determined by the sum of the electromotive forces induced on the secondary by each primary winding section, which equals the change in flux linkages over time (d ⁇ /dt) which is determined by the mutual inductance of the primary and the secondary and the change in the current of the secondary (M*dI/dt.)
- closing one switch can decrease the flux linkages between the primary and secondary windings, such that the open loop voltage on the secondary will be decreased to fraction of the maximum open loop voltage that could be realized with all switches 110 A through 110 D open.
- the open loop voltage will drop more.
- distributed active transformer 100 can operate in four different modes of operation—a maximum power mode with all switches 110 A through 110 D open, a medium-high power mode, with any one of switches 110 A through 110 D closed, a medium-low power mode with any two of switches 110 A through 110 D closed, and a low power mode with any three of switches 110 A through 110 D closed.
- the power levels will be a function of whether the impedance seen by each amplifier is constant or varies as a function of the switches that are closed, as well as other factors.
- the biasing current required for each of the bypassed amplifiers can also be decreased, such that the bias current requirements for distributed active transformer 100 can also be controlled.
- the bias current required for each of amplifiers 106 A and 108 A through 106 D and 108 D can be at a maximum. If switch 110 A is closed, then the bias current required for amplifiers 106 A and 108 B can decrease. In this manner, bias current requirements for distributed active transformer 100 can be controlled through the use of switches 110 A through 110 D, where suitable.
- the bias current for a given power level can be optimized by determining the power level range for a given switch setting, and using the range that provides the lowest bias current for the expected range of operation. For example, if the expected power levels for the operating range of an application would fall within either the power level range for operation of distributed active transformer 100 with either two of switches 110 closed or three of switches 110 closed, then operation of distributed active transformer 100 with three of switches 110 closed would satisfy the power requirements for the operating range while minimizing the bias current required to support operation.
- FIG. 1A shows an exemplary configuration of switches 120 A and 120 B, which can be used to connect or disconnect amplifiers 108 A and 106 D, respectively, from distributed active transformer 100 while allowing 102 A and 102 D to be independently coupled or decoupled.
- the exemplary configuration of switches 120 A and 120 B can be implemented at each connection between each primary winding section, secondary winding sections (if such sections are used), or in other suitable locations. Switches 120 A and 120 B thus provide additional flexibility for the configuration of distributed active transformer 100 .
- distributed active transformer 100 allows the power capability and biasing current requirements to be controlled through the operation of switches 110 A through 110 D. In this manner, additional control of the power output and power consumption of a distributed active transformer is provided.
- FIG. 2 is a diagram of distributed active transformer 200 with two primary windings in accordance with an exemplary embodiment of the present invention. Additional primary and secondary windings can likewise be provided for additional power conversion control, either internal or external to the secondary winding.
- Distributed active transformer 200 includes first primary winding sections 202 A, 202 B, 202 C, and 202 D, and second primary winding 212 .
- Secondary winding 204 is disposed between the first primary winding sections 202 A through 202 D and second primary winding 212 .
- push/pull amplifiers 206 A and 208 A are associated with primary winding section 202 A
- push/pull amplifiers 206 B and 208 B are associated with primary winding section 202 B
- push/pull amplifiers 206 C and 208 C are associated with primary winding section 202 C
- push/pull amplifiers 206 D and 208 D are associated with primary winding section 202 D.
- push/pull amplifiers 210 A and 210 B are associated with second primary winding 212 , although a single driver amplifier can alternatively be used where suitable.
- the secondary winding has an output 214 .
- Distributed active transformer 200 can operate with primary winding sections 102 A through 102 D active and second primary winding 212 inactive. In this mode, distributed active transformer 200 can provide higher power but with increased bias current requirements. Likewise, distributed active transformer 200 can operate with primary winding sections 102 A through 102 D inactive and with second primary winding 212 active. In this exemplary embodiment, the power delivered to output 214 can be lower than the power delivered to output 214 when first primary winding sections 202 A through 202 D are activated, but the bias current required can be lower than the bias required with primary winding sections 202 A through 202 D active.
- the spacing between second primary winding 212 and secondary winding 204 can be increased, so as to decrease the magnetic coupling between the primary and secondary windings.
- the power loss in second primary winding 212 when it is not being used can thus be decreased, as well as the voltage breakdown requirements of push/pull amplifiers 210 A and 210 B.
- Additional primary windings can likewise be provided, depending on the power levels required and the available space.
- distributed active transformer 200 can be operated in a first mode for high power with high bias current requirements by activation of primary winding sections 202 A through 202 D, and in a second mode with lower power and bias current requirements by activation of second primary winding 212 .
- Use of a first primary winding and a second primary winding allows the power output and bias current requirements for a distributed active transformer to be adjusted as needed by switching between primaries.
- FIGS. 3 AND 3A are diagrams of distributed active transformer 300 A with first and second primary windings and compensating capacitors in accordance with an exemplary embodiment of the present invention.
- Distributed active transformer 300 A allows the power loss caused by circulating currents in an unused primary winding to be mitigated through the use of a switched series capacitance, as well as decreasing the breakdown voltage imposed on the associated primary winding amplifiers.
- Distributed active transformer 300 A includes primary winding sections 302 A through 302 D with associated push/pull amplifier pairs 306 A and 308 A through 306 D and 308 D, respectively, and secondary winding 304 with output 312 .
- second primary winding 310 includes push/pull amplifiers 314 A and 314 B, which can be connected using switch 316 through capacitor 318 .
- capacitor 318 is connected in parallel with second primary winding 310 through switch 316 , an LC resonant circuit can be formed with secondary winding 304 .
- switch 316 can be opened to take second primary winding 310 out of resonance with secondary winding 304 and decrease losses due to circulating currents, as well as to decrease the peak voltage imposed on push/pull amplifiers 314 A and 314 B when they are inactive.
- capacitors can be switched into and out of windings in other suitable configurations, to take the windings in and out of resonance with other windings.
- a suitable configuration of switches and capacitors can be used in lieu of a single switch 316 and capacitor 318 , where each switch-capacitor pair can be controlled separately, thus allowing the resonance frequency of the secondary loop to be adjusted.
- this combination can be used to adjust the center frequency of a power amplifier so as to achieve a flat gain and efficiency response across multiple frequency bands or channels, to account for manufacturing process variations, to account for temperature variations, or for other suitable purposes.
- FIG. 4 is a diagram of distributed active transformer 300 B with first and second primary windings and compensating capacitors in accordance with an exemplary embodiment of the present invention.
- Distributed active transformer 300 B allows the power loss caused by circulating currents in an unused primary winding to be mitigated through the use of switched capacitors, as well as decreasing the breakdown voltage imposed on the associated primary winding amplifiers.
- Distributed active transformer 300 B includes primary winding sections 302 A through 302 D with associated push/pull amplifier pairs 306 A and 308 A through 306 D and 308 D, respectively, with secondary winding 304 and output 312 .
- second primary winding 310 includes push/pull amplifiers 314 A and 314 B, which can be connected using switches 316 through capacitors 318 . When capacitors 318 are connected to second primary winding 310 through switches 316 , an LC resonant circuit is created with secondary winding 304 .
- switches 316 can be opened to take second primary winding 310 out of resonance with secondary winding 304 and decrease losses due to circulating currents, as well as to decrease the peak voltage imposed on push/pull amplifiers 314 A and 314 B when they are inactive.
- FIG. 5 is a diagram of distributed active transformer 400 with impedance transformation ratio correction and resonance frequency selection in accordance with an exemplary embodiment of the present invention.
- Distributed active transformer 400 includes primary winding sections 402 A through 402 D with associated push/pull amplifiers 406 A and 408 A through 406 D and 408 D, respectively.
- Switches 418 A through 418 D are connected in series with capacitors 416 A through 416 D, respectively.
- Output 410 of secondary winding 404 includes switch 414 and capacitor 412 for impedance transformation ratio control.
- switch 414 and capacitor 412 can be omitted, such as where it is desirable only to allow the resonance frequency of distributed active transformer 400 to be controlled.
- a suitable configuration of switches and capacitors can be used in lieu of a single switch 414 and capacitor 412 , where each switch-capacitor pair can be controlled separately, thus allowing the resonance frequency of the secondary loop to be adjusted.
- the power operation mode of distributed active transformer 400 can be controlled, such as by closing one or more of switches 418 A through 418 D, so as to insert capacitors 416 A through 416 D in series with primary winding sections 402 A through 402 D.
- a series LC circuit is created to compensate for leakage inductance between the primary winding sections 402 A through 402 D and secondary winding 404 .
- capacitors 416 A through 416 D in series with primary winding sections 402 A though 402 D, the maximum output power is decreased, but the bias current required to achieve a gain level is also decreased.
- capacitor 412 is placed in parallel across the load by closing switch 414 to compensate for this leakage inductance, then the impedance transformation ratio is increased, which increases the maximum output power but which also increases the bias current requirements.
- the resonant frequency of distributed active transformer 400 can be adjusted for a particular frequency of operation by switching in capacitors 416 A through 416 D. In this manner, the efficiency and power output by distributed active transformer 400 can be optimized for a desired frequency of operation by configuring it for resonance at that frequency.
- distributed active transformer 400 can be operated in a first mode either with or without switch 414 and capacitor 412 to change the impedance transformation ratio by compensating for winding leakage inductance, in a second mode without switch 414 and capacitor 412 to change the resonant frequency of distributed active transformer 400 , or in both modes simultaneously.
- a suitable configuration of switches and capacitors can be used in lieu of switches 418 and capacitors 416 , where each switch-capacitor pair can be controlled separately, thus allowing the resonance frequency of the primary loop to be adjusted.
- FIG. 6 is a diagram of distributed active transformer 500 with switched-in capacitors that are in parallel with amplifiers 506 A and 508 A through 506 D and 508 D, in accordance with an exemplary embodiment of the present invention.
- Distributed active transformer 500 includes primary windings sections 502 A through 502 D with associated push/pull amplifiers 506 A and 508 A through 506 D and 508 D, respectively.
- Switch pairs 518 A through 518 D are connected in series with capacitor pairs 516 A through 516 D, respectively.
- Output 510 of secondary winding 504 includes switch 514 and capacitor 512 for impedance transformation ratio control. Alternatively, switch 514 and capacitor 512 can be omitted, such as where it is desirable to allow the resonance frequency of distributed active transformer 500 to be controlled.
- the power operation mode of distributed active transformer 500 can be controlled, such as by closing one or more of switch pairs 518 A through 518 D, so as to insert capacitor pairs 516 A through 516 D in series with primary winding sections 502 A through 502 D.
- a series LC circuit is provided to compensate for leakage inductance between the primary winding sections 502 A through 502 D and secondary winding 504 .
- capacitor pairs 516 A through 516 D in series with primary winding sections 502 A though 502 D, the maximum output power is decreased, but the bias current required to achieve a gain level is also reduced.
- capacitor 512 is placed in parallel across the load by closing switch 514 to compensate for this leakage inductance, then the impedance transformation ratio is increased, which increases the maximum output power but which also increases the bias current requirements.
- distributed active transformer 500 can be adjusted for a particular frequency of operation by switching in capacitor pairs 516 A through 516 D. In this manner, the efficiency and power output of distributed active transformer 500 can be optimized for a desired frequency of operation by placing it in resonance for that frequency.
- distributed active transformer 500 can be operated in a first mode either with or without switch 514 and capacitor 512 to change the impedance transformation ratio by compensating for winding leakage inductance, in a second mode without switch 514 and capacitor 512 to change the resonant frequency of distributed active transformer 500 , or in both modes simultaneously.
- FIG. 7 is a diagram of distributed active transformer 600 integrated with a low noise amplifier in accordance with an exemplary embodiment of the present invention.
- distributed active transformer 600 includes a low noise amplifier 614 and associated switch 612 .
- switch 612 When switch 612 is closed, as shown, a transmitted signal can be provided by modulating the input through push/pull amplifiers 606 A and 608 A through 606 D and 608 D.
- switch 612 When switch 612 is opened and push/pull amplifier pairs 606 A and 608 A through 606 D and 608 D are not operated, a received signal can be fed through an inductor coil formed by the secondary winding of distributed active transformer 600 , and low noise amplifier 614 can be used to process the signal.
- distributed active transformer 600 can be used in place of a transmit switch in a transceiver, or for other suitable applications.
- FIG. 8 is a diagram of distributed active transformer 700 with a low noise amplifier in accordance with another exemplary embodiment of the present invention.
- a low noise amplifier is shown, any suitable device can be used, including but not limited to a mixer, a transceiver, a filter, and a digital to analog converter.
- distributed active transformer 700 includes a split secondary winding 704 with switches 710 A and 710 B connected to low noise amplifier 712 .
- Distributed active transformer 700 can be operated in a first transmit mode with switches 710 A and 710 B closed, as shown, and in a second receive mode with switches 710 A and 710 B open. When switches 710 A and 710 B are open, low noise amplifier 712 can be used to amplify a signal received at input 714 .
Abstract
Reconfigurable distributed active transformers are provided. The exemplary embodiments provided allow changing of the effective number and configuration of the primary and secondary windings, where the distributed active transformer structures can be reconfigured dynamically to control the output power levels, allow operation at multiple frequency bands, maintain a high performance across multiple channels, and sustain desired characteristics across process, temperature and other environmental variations. Integration of the distributed active transformer power amplifiers and a low noise amplifier on a semiconductor substrate can also be provided.
Description
This application is a continuation of U.S. patent application Ser. No. 11/037,527 filed Jan. 18, 2005, now U.S. Pat. No. 7,119,619 which is a continuation of U.S. patent application Ser. No. 10/386,001 filed Mar. 11, 2003, now U.S. Pat. No. 6,856,199 which claims priority from U.S. Provisional Patent Application No. 60/363,424, filed Mar. 11, 2002, and is a continuation-in-part of U.S. patent application Ser. No. 09/974,578, filed Oct. 9, 2001, now U.S. Pat. No. 6,816,012 which claims priority to U.S. Provisional Patent Application No. 60/239,470 filed Oct. 10, 2000; U.S. Provisional Patent Application No. 60/239,474 filed Oct. 10, 2000; and U.S. Provisional Patent Application No. 60/288,601 filed May 4, 2001.
The U.S. Government has a paid-up license in this invention and the right in limited circumstances to require the patent owner to license others on reasonable terms as provided for by the terms of ECS-0083220 awarded by NSF.
The present invention pertains to the field of distributed active transformers. More specifically, the invention relates to distributed active transformers that include features that provide additional control over operational parameters.
A distributed active transformer includes a primary winding that uses active devices to control the current direction and magnitude on the winding. For example, U.S. patent application Ser. No. 09/974,578, filed Oct. 9, 2001, describes distributed active transformers that can comprise at least two push/pull amplifiers designed to amplify an RF input signal. The distributed active transformer can be operated where a first amplifier causes current to flow on the primary winding in a first direction, and where a second amplifier causes current to flow on the primary in a second direction. In this manner, an alternating current is induced on the secondary winding.
In accordance with the present invention, a distributed active transformer is provided that overcomes known problems with existing transformers.
In particular, a distributed active transformer is provided that allows sections of the distributed active transformer to be independently controlled.
In accordance with an exemplary embodiment of the present invention, a distributed active transformer is provided. The distributed active transformer includes a primary winding having two or more sets of push/pull amplifiers, where each set of push/pull amplifiers is used to create an alternating current on a section of the primary winding. A secondary winding is disposed adjacent to the primary winding, such that the alternating current on the primary induces alternating current on the secondary. The primary winding and the secondary winding can be disposed on a semiconductor substrate.
The present invention provides many important technical advantages. One important technical advantage of the present invention is a distributed active transformer that allows sections of the distributed active transformer to be independently controlled, so as to adjust the operating parameters of the distributed active transformer.
Those skilled in the art will appreciate the advantages and superior features of the invention together with other important aspects thereof on reading the detailed description that follows in conjunction with the drawings.
In the description that follows like parts are marked throughout the specification and drawings with the same reference numerals, respectively. The drawing figures are not necessarily to scale and certain features may be shown in somewhat generalized or schematic form in the interest of clarity and conciseness.
Distributed active transformer 100 includes primary winding sections 102A, 102B, 102C, and 102D, and secondary winding 104. Each primary winding section has an associated push/pull amplifier pair that includes amplifiers 106A and 108A for primary winding section 102A, amplifiers 106B and 108B for primary winding section 102B, amplifiers 106C and 108C for primary winding section 102C, and amplifiers 106D and 108D for primary winding section 102D. The amplifiers can be implemented using bipolar junction transistors (BJTs), metal oxide semiconductor field-effect transistors (MOSFETs), hetero-junction bipolar transistors (HBTs), metal-semiconductor field effect transistors (MESFETs), lateral double-diffused metal oxide semiconductor transistors (LDMOSs), complementary MOS transistors (CMOS), or other suitable devices. Amplifier 106A drives current to the positive terminal of primary winding section 102A, whereas amplifier 108A drives current from the negative terminal of primary winding section 102A. The polarities of the amplifiers can be alternated to reverse the direction of current flow. A drain voltage Vdd (not explicitly shown) may alternatively be provided at a midway point, corner, or at other suitable locations on each primary winding section to provide the current source or other suitable configurations can be used to create time-varying current on the primary winding sections using the push/pull amplifier pairs. A similar configuration is used for primary winding sections 102B, 102C, and 102D.
Each push/pull amplifier pair of each primary winding section can be controlled so that the current flowing on the primary winding section alternates in direction and magnitude in a manner that creates a magnetic field that induces an electromotive force (EMF) on secondary winding 104. The EMF causes current to flow in secondary winding 104, based on the impedance of that winding and any associated circuit. The current through the push/pull amplifier pairs can be controlled so as to adjust both the current and the voltage induced in this manner on secondary winding 104.
For example, if switch 110A is closed, the power level generated by distributed active transformer 100 is less than the power level that is generated for distributed active transformer 100 with all switches open. The current magnitude through secondary winding 104 will be determined by the sum of the electromotive forces induced on the secondary by each primary winding section, which equals the change in flux linkages over time (dΦ/dt) which is determined by the mutual inductance of the primary and the secondary and the change in the current of the secondary (M*dI/dt.)
When a push-pull configuration is used with no Vdd points, closing a single switch 110 results in an increased impedance for each remaining push/pull amplifier pair that drives current through the two connected primary winding sections. This configuration decreases the output power by increasing the impedance seen by the remaining amplifiers. Alternately, the winding sections can be capacitively coupled, such that the impedance seen by each amplifier remains the same, but where power is controlled by turning off or switching out amplifier sections. In either configuration, turning off amplifiers results in a decrease in output power and can be used to lower the overall power dissipation of the amplifier.
When a push-pull configuration is used that includes Vdd points, with a single switch 110 closed, one quarter of the primary winding section will not be carrying any current, as no current will flow between the Vdd points of the two connected primary winding sections.
In the described configurations, closing one switch can decrease the flux linkages between the primary and secondary windings, such that the open loop voltage on the secondary will be decreased to fraction of the maximum open loop voltage that could be realized with all switches 110A through 110D open. Likewise, with two and three switches 110 closed, the open loop voltage will drop more. Thus, distributed active transformer 100 can operate in four different modes of operation—a maximum power mode with all switches 110A through 110D open, a medium-high power mode, with any one of switches 110A through 110D closed, a medium-low power mode with any two of switches 110A through 110D closed, and a low power mode with any three of switches 110A through 110D closed. The power levels will be a function of whether the impedance seen by each amplifier is constant or varies as a function of the switches that are closed, as well as other factors.
In addition to providing different power modes of operation with switches 110A through 110D, the biasing current required for each of the bypassed amplifiers can also be decreased, such that the bias current requirements for distributed active transformer 100 can also be controlled. For example, with all switches 110A through 110D open, the bias current required for each of amplifiers 106A and 108A through 106D and 108D can be at a maximum. If switch 110A is closed, then the bias current required for amplifiers 106A and 108B can decrease. In this manner, bias current requirements for distributed active transformer 100 can be controlled through the use of switches 110A through 110D, where suitable. Likewise, the bias current for a given power level can be optimized by determining the power level range for a given switch setting, and using the range that provides the lowest bias current for the expected range of operation. For example, if the expected power levels for the operating range of an application would fall within either the power level range for operation of distributed active transformer 100 with either two of switches 110 closed or three of switches 110 closed, then operation of distributed active transformer 100 with three of switches 110 closed would satisfy the power requirements for the operating range while minimizing the bias current required to support operation.
In operation, distributed active transformer 100 allows the power capability and biasing current requirements to be controlled through the operation of switches 110A through 110D. In this manner, additional control of the power output and power consumption of a distributed active transformer is provided.
Distributed active transformer 200 includes first primary winding sections 202A, 202B, 202C, and 202D, and second primary winding 212. Secondary winding 204 is disposed between the first primary winding sections 202A through 202D and second primary winding 212. For the first primary winding sections, push/pull amplifiers 206A and 208A are associated with primary winding section 202A, push/pull amplifiers 206B and 208B are associated with primary winding section 202B, push/pull amplifiers 206C and 208C are associated with primary winding section 202C, and push/pull amplifiers 206D and 208D are associated with primary winding section 202D. Likewise, push/pull amplifiers 210A and 210B are associated with second primary winding 212, although a single driver amplifier can alternatively be used where suitable. The secondary winding has an output 214.
Distributed active transformer 200 can operate with primary winding sections 102A through 102D active and second primary winding 212 inactive. In this mode, distributed active transformer 200 can provide higher power but with increased bias current requirements. Likewise, distributed active transformer 200 can operate with primary winding sections 102A through 102D inactive and with second primary winding 212 active. In this exemplary embodiment, the power delivered to output 214 can be lower than the power delivered to output 214 when first primary winding sections 202A through 202D are activated, but the bias current required can be lower than the bias required with primary winding sections 202A through 202D active.
In another exemplary embodiment, the spacing between second primary winding 212 and secondary winding 204 can be increased, so as to decrease the magnetic coupling between the primary and secondary windings. The power loss in second primary winding 212 when it is not being used can thus be decreased, as well as the voltage breakdown requirements of push/ pull amplifiers 210A and 210B. Additional primary windings can likewise be provided, depending on the power levels required and the available space.
In operation, distributed active transformer 200 can be operated in a first mode for high power with high bias current requirements by activation of primary winding sections 202A through 202D, and in a second mode with lower power and bias current requirements by activation of second primary winding 212. Use of a first primary winding and a second primary winding allows the power output and bias current requirements for a distributed active transformer to be adjusted as needed by switching between primaries.
Distributed active transformer 300A includes primary winding sections 302A through 302D with associated push/ pull amplifier pairs 306A and 308A through 306D and 308D, respectively, and secondary winding 304 with output 312. Likewise, second primary winding 310 includes push/ pull amplifiers 314A and 314B, which can be connected using switch 316 through capacitor 318. When capacitor 318 is connected in parallel with second primary winding 310 through switch 316, an LC resonant circuit can be formed with secondary winding 304. When second primary winding 310 is not in use, switch 316 can be opened to take second primary winding 310 out of resonance with secondary winding 304 and decrease losses due to circulating currents, as well as to decrease the peak voltage imposed on push/ pull amplifiers 314A and 314B when they are inactive. In general, capacitors can be switched into and out of windings in other suitable configurations, to take the windings in and out of resonance with other windings.
As shown in FIG. 3A , a suitable configuration of switches and capacitors can be used in lieu of a single switch 316 and capacitor 318, where each switch-capacitor pair can be controlled separately, thus allowing the resonance frequency of the secondary loop to be adjusted. In one exemplary embodiment, this combination can be used to adjust the center frequency of a power amplifier so as to achieve a flat gain and efficiency response across multiple frequency bands or channels, to account for manufacturing process variations, to account for temperature variations, or for other suitable purposes.
Distributed active transformer 300B includes primary winding sections 302A through 302D with associated push/ pull amplifier pairs 306A and 308A through 306D and 308D, respectively, with secondary winding 304 and output 312. Likewise, second primary winding 310 includes push/ pull amplifiers 314A and 314B, which can be connected using switches 316 through capacitors 318. When capacitors 318 are connected to second primary winding 310 through switches 316, an LC resonant circuit is created with secondary winding 304. When second primary winding 310 is not in use, switches 316 can be opened to take second primary winding 310 out of resonance with secondary winding 304 and decrease losses due to circulating currents, as well as to decrease the peak voltage imposed on push/ pull amplifiers 314A and 314B when they are inactive.
In this exemplary embodiment, the power operation mode of distributed active transformer 400 can be controlled, such as by closing one or more of switches 418A through 418D, so as to insert capacitors 416A through 416D in series with primary winding sections 402A through 402D. In this manner, a series LC circuit is created to compensate for leakage inductance between the primary winding sections 402A through 402D and secondary winding 404. Thus, by placing one or more of capacitors 416A through 416D in series with primary winding sections 402A though 402D, the maximum output power is decreased, but the bias current required to achieve a gain level is also decreased. Alternatively, if capacitor 412 is placed in parallel across the load by closing switch 414 to compensate for this leakage inductance, then the impedance transformation ratio is increased, which increases the maximum output power but which also increases the bias current requirements.
In addition, the resonant frequency of distributed active transformer 400 can be adjusted for a particular frequency of operation by switching in capacitors 416A through 416D. In this manner, the efficiency and power output by distributed active transformer 400 can be optimized for a desired frequency of operation by configuring it for resonance at that frequency. Thus, depending on the sizes of the capacitors, distributed active transformer 400 can be operated in a first mode either with or without switch 414 and capacitor 412 to change the impedance transformation ratio by compensating for winding leakage inductance, in a second mode without switch 414 and capacitor 412 to change the resonant frequency of distributed active transformer 400, or in both modes simultaneously. Likewise, a suitable configuration of switches and capacitors can be used in lieu of switches 418 and capacitors 416, where each switch-capacitor pair can be controlled separately, thus allowing the resonance frequency of the primary loop to be adjusted.
In this exemplary embodiment, the power operation mode of distributed active transformer 500 can be controlled, such as by closing one or more of switch pairs 518A through 518D, so as to insert capacitor pairs 516A through 516D in series with primary winding sections 502A through 502D. In this manner, a series LC circuit is provided to compensate for leakage inductance between the primary winding sections 502A through 502D and secondary winding 504. Thus, by placing one or more of capacitor pairs 516A through 516D in series with primary winding sections 502A though 502D, the maximum output power is decreased, but the bias current required to achieve a gain level is also reduced. Alternatively, if capacitor 512 is placed in parallel across the load by closing switch 514 to compensate for this leakage inductance, then the impedance transformation ratio is increased, which increases the maximum output power but which also increases the bias current requirements.
In addition, the resonant frequency of distributed active transformer 500 can be adjusted for a particular frequency of operation by switching in capacitor pairs 516A through 516D. In this manner, the efficiency and power output of distributed active transformer 500 can be optimized for a desired frequency of operation by placing it in resonance for that frequency. Thus, depending on the sizes of the capacitors, distributed active transformer 500 can be operated in a first mode either with or without switch 514 and capacitor 512 to change the impedance transformation ratio by compensating for winding leakage inductance, in a second mode without switch 514 and capacitor 512 to change the resonant frequency of distributed active transformer 500, or in both modes simultaneously.
In addition to the primary and secondary windings and associated push/pull amplifiers previously described, distributed active transformer 600 includes a low noise amplifier 614 and associated switch 612. When switch 612 is closed, as shown, a transmitted signal can be provided by modulating the input through push/ pull amplifiers 606A and 608A through 606D and 608D. When switch 612 is opened and push/ pull amplifier pairs 606A and 608A through 606D and 608D are not operated, a received signal can be fed through an inductor coil formed by the secondary winding of distributed active transformer 600, and low noise amplifier 614 can be used to process the signal. In this manner, integration of low noise amplifier 614 with switch 612 through a single-ended output of distributed active transformer 600 allows a receiver/transmitter architecture to be implemented. In one exemplary embodiment, distributed active transformer 600 can be used in place of a transmit switch in a transceiver, or for other suitable applications.
In addition to the primary and secondary winding structures and associated push/pull amplifiers previously described, distributed active transformer 700 includes a split secondary winding 704 with switches 710A and 710B connected to low noise amplifier 712. Distributed active transformer 700 can be operated in a first transmit mode with switches 710A and 710B closed, as shown, and in a second receive mode with switches 710A and 710B open. When switches 710A and 710B are open, low noise amplifier 712 can be used to amplify a signal received at input 714. When switches 710A and 710B are closed, primary winding sections 702A through 702D of distributed active transformer 700 can be driven by push/ pull amplifiers 706A and 708A through 706D and 708D, respectively, so that an input signal can be amplified and provided for transmission at input 714.
Although exemplary embodiments of the system and method of the present invention has been described in detail herein, those skilled in the art will also recognize that various substitutions and modifications can be made to the systems and methods without departing from the scope and spirit of the appended claims.
Claims (20)
1. A transceiver having a distributed active transformer comprising:
a primary winding having one or more pairs of amplifiers at different points;
a secondary winding disposed adjacent to the primary winding; and
wherein the amplifiers are independently controlled and switched into and out of the primary winding.
2. The distributed active transformer of claim 1 wherein the primary winding further comprises two or more sections, wherein each section terminates in one of the pairs of amplifiers.
3. The distributed active transformer of claim 1 further comprising one or more additional primary windings.
4. The transceiver of claim 1 wherein the distributed active transformer is disposed on a single chip integrated circuit package for the transceiver.
5. The transceiver of claim 1 wherein the primary winding comprises means for providing a primary winding.
6. The transceiver of claim 1 wherein the secondary winding comprises means for providing a secondary winding.
7. The distributed active transformer of claim 1 wherein the primary winding further comprises means for amplifying a signal on the primary winding.
8. The distributed active transformer of claim 1 further comprising means for providing one or more additional primary windings.
9. A single-chip transceiver including a distributed active transformer disposed on a semiconductor substrate, comprising:
a primary winding having one or more amplifiers that are independently controlled and switched into and out of the primary winding; and
a secondary winding disposed adjacent to the primary winding; and
a second primary winding disposed adjacent to one of the primary winding or the secondary winding.
10. The single-chip transceiver of claim 9 , wherein spacing between the second primary winding and the primary winding is increased so as to reduce power loss due to circulating currents in the second primary when the primary is driven.
11. The single-chip transceiver of claim 9 wherein spacing between the second primary winding and the primary winding is adjusted so as to reduce power loss due to circulating currents when the primary is driven.
12. The single-chip transceiver of claim 9 wherein the primary winding comprises means for amplifying a signal.
13. The single-chip transceiver of claim 9 wherein the secondary winding comprises means for providing a secondary winding.
14. The single-chip transceiver of claim 9 wherein the second primary winding comprises means for providing a second primary winding.
15. The single-chip transceiver of claim 9 further comprising means for reducing power loss due to circulating currents in the second primary when the primary is driven.
16. The transceiver of claim 1 further comprising means for adjusting a resonant frequency of the distributed active transformer.
17. The single-chip transceiver of claim 9 further comprising means for adjusting a resonant frequency of the distributed active transformer.
18. A method for providing a single-chip transceiver having a distributed active transformer comprising:
controlling a first amplifier at a first point on a primary winding section and a second amplifier at a second point on the primary winding section so as to cause current to flow in alternating directions;
extracting an alternating current induced in a secondary winding; and
bypassing the second amplifier so as to cause current to flow over a portion of the first primary winding section.
19. The method of claim 18 further comprising providing a current source from a point between the first point and the second point.
20. The method of claim 18 further comprising:
turning off the first amplifier and the second amplifier; and
inducing an alternating current in the secondary winding using a second primary winding.
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US13/231,871 US8350625B2 (en) | 2000-10-10 | 2011-09-13 | Adaptive power amplifier |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100225400A1 (en) * | 2009-03-03 | 2010-09-09 | Ahmadreza Rofougaran | Method and system for on-chip impedance control to impedance match a configurable front end |
US20110128079A1 (en) * | 2009-11-30 | 2011-06-02 | Electronics And Telecommunications Research Institute | Multi-band power amplifier with high-frequency transformer |
US8536948B2 (en) | 2010-06-21 | 2013-09-17 | Panasonic Corporation | Power amplifier |
US9520906B2 (en) | 2014-06-25 | 2016-12-13 | Qualcomm Incorporated | Switched capacitor transmitter circuits and methods |
US9634614B2 (en) | 2013-02-25 | 2017-04-25 | Telefonaktiebolaget Lm Ericsson (Publ) | Distributed power amplifier circuit |
US10103695B2 (en) | 2014-12-30 | 2018-10-16 | Skyworks Solutions, Inc. | Integrated CMOS transmit/receive switch in a radio frequency device |
US10181828B2 (en) | 2016-06-29 | 2019-01-15 | Skyworks Solutions, Inc. | Active cross-band isolation for a transformer-based power amplifier |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7455350B2 (en) * | 1997-12-19 | 2008-11-25 | Henkel Kgaa | Assembly for sound-proofing cavities |
CN1294698C (en) | 2000-10-10 | 2007-01-10 | 加利福尼亚技术协会 | Distributed circular geometry power amplifier architecture |
US6856199B2 (en) * | 2000-10-10 | 2005-02-15 | California Institute Of Technology | Reconfigurable distributed active transformers |
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US7184735B2 (en) * | 2003-08-21 | 2007-02-27 | Broadcom Corporation | Radio frequency integrated circuit having symmetrical differential layout |
US7095283B2 (en) * | 2003-10-28 | 2006-08-22 | Axiom Microdevices, Inc. | Supply circuit for power amplifier drivers |
US7256573B2 (en) * | 2004-03-31 | 2007-08-14 | Axiom Microdevices, Inc. | Distributed active transformer power control techiques |
US7161423B2 (en) * | 2004-06-30 | 2007-01-09 | Silicon Laboratories Inc. | Parallel power amplifier and associated methods |
US7372336B2 (en) * | 2004-12-31 | 2008-05-13 | Samsung Electronics Co., Ltd. | Small-sized on-chip CMOS power amplifier having improved efficiency |
US7427801B2 (en) * | 2005-04-08 | 2008-09-23 | International Business Machines Corporation | Integrated circuit transformer devices for on-chip millimeter-wave applications |
US7053714B1 (en) | 2005-10-12 | 2006-05-30 | Peavey Electronics Corporation | Methods and apparatus for switching between class A and A/B operation in a power amplifier |
US7719141B2 (en) * | 2006-11-16 | 2010-05-18 | Star Rf, Inc. | Electronic switch network |
US7710197B2 (en) * | 2007-07-11 | 2010-05-04 | Axiom Microdevices, Inc. | Low offset envelope detector and method of use |
US20100019857A1 (en) * | 2008-07-22 | 2010-01-28 | Star Rf, Inc. | Hybrid impedance matching |
TWI404085B (en) * | 2008-08-28 | 2013-08-01 | Ind Tech Res Inst | Transformer and structure thereof and power amplifier |
JP2010212795A (en) * | 2009-03-06 | 2010-09-24 | Toshiba Corp | Amplifier and radio device |
US8232857B1 (en) * | 2009-04-15 | 2012-07-31 | Triquint Semiconductor, Inc. | Flux-coupled transformer for power amplifier output matching |
US8174315B1 (en) | 2009-04-27 | 2012-05-08 | Triquint Semiconductor, Inc. | Method and circuit for transforming the impedance of a load |
US8390051B2 (en) * | 2010-07-27 | 2013-03-05 | Micron Technology, Inc. | Methods of forming semiconductor device structures and semiconductor device structures including a uniform pattern of conductive lines |
US8502598B2 (en) | 2011-09-30 | 2013-08-06 | Intel Corporation | Digitally-scalable transformer combining power amplifier |
US8811038B2 (en) | 2011-11-11 | 2014-08-19 | Gridco, Inc. | Apparatus and method for soft switching in a medium voltage to low voltage converter |
TWI497907B (en) * | 2012-02-10 | 2015-08-21 | Univ Nat Taiwan | Transformer power amplifier |
US8928405B2 (en) | 2012-09-10 | 2015-01-06 | Cambridge Silicon Radio Limited | Power amplification circuits |
US9391566B2 (en) * | 2013-11-15 | 2016-07-12 | Peregrine Semiconductor Corporation | Methods and devices for testing segmented electronic assemblies |
US9407212B2 (en) | 2013-11-15 | 2016-08-02 | Peregrine Semiconductor Corporation | Devices and methods for improving yield of scalable periphery amplifiers |
US9438185B2 (en) | 2013-11-15 | 2016-09-06 | Peregrine Semiconductor Corporation | Devices and methods for increasing reliability of scalable periphery amplifiers |
EP3000418B1 (en) * | 2014-09-26 | 2016-11-09 | Storz Medical Ag | Device for treatment of the human or animal body with mechanical impacts |
ITUA20163549A1 (en) * | 2016-05-18 | 2017-11-18 | St Microelectronics Srl | ACTIVE TRANSFORMER, EQUIPMENT AND CORRESPONDENT PROCEDURE |
US11025201B2 (en) | 2018-02-28 | 2021-06-01 | Bae Systems Information And Electronic Systems Integration Inc. | Power efficient radio mixers |
FR3099667A1 (en) * | 2019-07-29 | 2021-02-05 | Stmicroelectronics S.R.L. | Distributed active transformer voltage controlled oscillator |
Citations (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3098200A (en) | 1956-10-29 | 1963-07-16 | Honeywell Regulator Co | Semiconductor oscillator and amplifier |
US3157839A (en) | 1962-02-01 | 1964-11-17 | Harry B Brown | Transistorized bridge amplifier with a bias compensating circuit therefor |
FR1413073A (en) | 1964-01-22 | 1965-10-08 | Portenseigne Ets Marcel | Improvements to wireless energy distributors |
DE1276764B (en) | 1965-04-15 | 1968-09-05 | Deutsches Post Rundfunk Und Fe | High frequency distributor |
US3703685A (en) | 1969-09-10 | 1972-11-21 | Labtron Corp Of America | Multiband antenna with associated r.f. amplifier |
US3919660A (en) | 1971-02-08 | 1975-11-11 | Bell Telephone Labor Inc | Amplifiers with impedance-matched inputs and outputs |
US4283685A (en) | 1979-12-13 | 1981-08-11 | Raytheon Company | Waveguide-to-cylindrical array transition |
US4305043A (en) | 1980-03-03 | 1981-12-08 | Ford Aerospace & Communications Corporation | Coupler having arbitrary impedance transformation ratio and arbitrary coubling ratio |
US4706038A (en) | 1986-09-29 | 1987-11-10 | Motorola, Inc. | Wideband linear Darlington cascode amplifier |
US4916410A (en) | 1989-05-01 | 1990-04-10 | E-Systems, Inc. | Hybrid-balun for splitting/combining RF power |
EP0379202A2 (en) | 1989-01-19 | 1990-07-25 | Fujitsu Limited | Phase inverter and push-pull amplifier using the same |
US5066925A (en) | 1990-12-10 | 1991-11-19 | Westinghouse Electric Corp. | Multi push-pull MMIC power amplifier |
US5130664A (en) | 1991-03-07 | 1992-07-14 | C-Cor Electronics, Inc. | One GHZ CATV repeater station |
US5208725A (en) | 1992-08-19 | 1993-05-04 | Akcasu Osman E | High capacitance structure in a semiconductor device |
US5223800A (en) | 1991-09-30 | 1993-06-29 | Itt Corporation | Distributed arrays of microelectronic amplifiers |
EP0556398A1 (en) | 1991-03-29 | 1993-08-25 | Anritsu Corporation | Wide band frequency allotment type signal selection device utilizing electromagnetic coupling |
US5477370A (en) | 1989-12-01 | 1995-12-19 | Scientific-Atlanta, Inc. | Push-pull optical receiver having gain control |
US5612647A (en) | 1995-06-30 | 1997-03-18 | Harris Corporation | RF power amplifier system having an improved drive system |
US5742205A (en) * | 1995-07-27 | 1998-04-21 | Scientific-Atlanta, Inc. | Field effect transistor cable television line amplifier |
US5793253A (en) | 1995-04-28 | 1998-08-11 | Unisys Corporation | High power solid state microwave transmitter |
US5920240A (en) | 1996-06-19 | 1999-07-06 | The Regents Of The University Of California | High efficiency broadband coaxial power combiner/splitter with radial slotline cards |
US5939766A (en) | 1996-07-24 | 1999-08-17 | Advanced Micro Devices, Inc. | High quality capacitor for sub-micrometer integrated circuits |
US5973557A (en) | 1996-10-18 | 1999-10-26 | Matsushita Electric Industrial Co., Ltd. | High efficiency linear power amplifier of plural frequency bands and high efficiency power amplifier |
US6011438A (en) | 1997-11-27 | 2000-01-04 | Nec Corporation | Push-pull wideband semiconductor amplifier |
US6057571A (en) | 1998-03-31 | 2000-05-02 | Lsi Logic Corporation | High aspect ratio, metal-to-metal, linear capacitor for an integrated circuit |
US6107885A (en) * | 1999-01-25 | 2000-08-22 | General Instrument Corporation | Wideband linear GaAsFET ternate cascode amplifier |
US6114911A (en) | 1998-03-25 | 2000-09-05 | Matsushita Electric Industrial Co., Ltd. | Power amplifier |
US6121842A (en) | 1997-05-21 | 2000-09-19 | Raytheon Company | Cascode amplifier |
WO2001056171A2 (en) | 2000-01-25 | 2001-08-02 | Paradigm Wireless Communications, Llc | Switch assembly with a multi-pole switch for combining amplified rf signals to a single rf signal |
US6351185B1 (en) | 1999-08-16 | 2002-02-26 | Globespan, Inc. | Increased output swing line drivers for operation at supply voltages that exceed the breakdown voltage of the integrated circuit technology |
US6383858B1 (en) | 2000-02-16 | 2002-05-07 | Agere Systems Guardian Corp. | Interdigitated capacitor structure for use in an integrated circuit |
US6385033B1 (en) | 2000-09-29 | 2002-05-07 | Intel Corporation | Fingered capacitor in an integrated circuit |
US6417535B1 (en) | 1998-12-23 | 2002-07-09 | Lsi Logic Corporation | Vertical interdigitated metal-insulator-metal capacitor for an integrated circuit |
US6448847B1 (en) | 2000-09-12 | 2002-09-10 | Silicon Laboratories, Inc. | Apparatus and method for providing differential-to-single ended conversion and impedance transformation |
Family Cites Families (114)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US513664A (en) * | 1894-01-30 | Drill attachment for planters | ||
US3430157A (en) | 1966-11-10 | 1969-02-25 | John W Wood | High efficiency class c amplifier |
US3449685A (en) | 1967-04-25 | 1969-06-10 | Us Navy | Automatic range selector employing plural amplifiers of different gains |
US3652947A (en) | 1970-02-24 | 1972-03-28 | Motorola Inc | Power amplifier including plurality of push-pull amplifier sections having outputs coupled in parallel |
US3967161A (en) | 1972-06-14 | 1976-06-29 | Lichtblau G J | A multi-frequency resonant tag circuit for use with an electronic security system having improved noise discrimination |
US3919656A (en) | 1973-04-23 | 1975-11-11 | Nathan O Sokal | High-efficiency tuned switching power amplifier |
US4117415A (en) | 1977-04-14 | 1978-09-26 | Rca Corporation | Bridge amplifiers employing complementary transistors |
US4165493A (en) | 1978-04-17 | 1979-08-21 | Rockwell International Corporation | Protected amplifier apparatus |
US4181889A (en) | 1978-09-05 | 1980-01-01 | General Motors Corporation | Citizens band transmitter with overall envelope feedback from antenna coupling filter |
FR2531274A1 (en) | 1982-07-30 | 1984-02-03 | Centre Nat Rech Scient | POWER COMBINATOR DEVICE FOR MICROWAVE OSCILLATOR OR AMPLIFIER |
US4607323A (en) | 1984-04-17 | 1986-08-19 | Sokal Nathan O | Class E high-frequency high-efficiency dc/dc power converter |
US6229718B1 (en) | 1984-10-05 | 2001-05-08 | Ole K. Nilssen | Parallel-resonant bridge inverter |
US4994760A (en) | 1985-02-14 | 1991-02-19 | Signal One Corporation | Apparatus and method for combining output signals from parallelly coupled power field effect transistors in high frequency amplifiers |
US4717884A (en) | 1986-04-14 | 1988-01-05 | Motorola, Inc. | High efficiency RF power amplifier |
JPH0682998B2 (en) | 1986-07-30 | 1994-10-19 | 日本電信電話株式会社 | Power amplifier |
US4694261A (en) | 1986-10-29 | 1987-09-15 | International Business Machines Corporation | Integrated high gain voltage controlled oscillator |
US5060298A (en) | 1988-12-09 | 1991-10-22 | Siemens Aktiengesellschaft | Monolithic double balanced mixer with high third order intercept point employing an active distributed balun |
US4994755A (en) | 1989-05-22 | 1991-02-19 | Raytheon Company | Active balun |
JPH03173289A (en) | 1989-12-01 | 1991-07-26 | Toshiba Corp | Maximum value/minimum value circuit |
US5081425A (en) | 1990-05-24 | 1992-01-14 | E-Systems, Inc. | Vswr adaptive power amplifier system |
JPH0732335B2 (en) | 1990-11-16 | 1995-04-10 | 日本電信電話株式会社 | High frequency amplifier |
US5115204A (en) | 1991-02-21 | 1992-05-19 | Pioneer Electronic Corporation | Differential amplifier |
CA2137289A1 (en) | 1992-06-05 | 1993-12-23 | Derek Bray | Electrodeless discharge lamp containing push-pull class e amplifier and bifilar coil |
GB9217679D0 (en) | 1992-08-20 | 1992-09-30 | Marconi Gec Ltd | Combiners for r.f.power amplifiers |
US5327337A (en) | 1992-09-01 | 1994-07-05 | Broadcast Electronics, Inc. | Resonant push-pull switching power amplifier |
JPH06334446A (en) | 1993-05-26 | 1994-12-02 | Shinsaku Mori | High output type class e amplifier employing auxiliary switch |
SE502599C2 (en) | 1993-09-09 | 1995-11-20 | Ericsson Ge Mobile Communicat | Methods and devices at a homo pad receiver to minimize leakage of interference signals |
US5479134A (en) | 1993-09-20 | 1995-12-26 | Rohm Co., Ltd. | Power amplifier circuit for audio signal and audio device using the same |
US5483197A (en) | 1993-09-28 | 1996-01-09 | Rohm Co., Ltd. | Power amplifier circuit for audio signal and audio device using the same |
US5698469A (en) | 1994-09-26 | 1997-12-16 | Endgate Corporation | Method of making a hybrid circuit with a chip having active devices with extra-chip interconnections |
US5600575A (en) | 1994-10-05 | 1997-02-04 | Anticole; Robert B. | Drive protection monitor for motor and amplifier |
JP3487461B2 (en) | 1994-12-17 | 2004-01-19 | ソニー株式会社 | Transformers and amplifiers |
US5541554A (en) * | 1995-03-06 | 1996-07-30 | Motorola, Inc. | Multi-mode power amplifier |
US5673001A (en) | 1995-06-07 | 1997-09-30 | Motorola, Inc. | Method and apparatus for amplifying a signal |
JP3522969B2 (en) | 1995-10-25 | 2004-04-26 | パイオニア株式会社 | BTL amplifier device |
US5872481A (en) | 1995-12-27 | 1999-02-16 | Qualcomm Incorporated | Efficient parallel-stage power amplifier |
US5774017A (en) * | 1996-06-03 | 1998-06-30 | Anadigics, Inc. | Multiple-band amplifier |
GB2314474B (en) | 1996-06-21 | 2001-03-07 | Univ Bristol | Low power audio device |
US5749051A (en) | 1996-07-18 | 1998-05-05 | Ericsson Inc. | Compensation for second order intermodulation in a homodyne receiver |
US6549112B1 (en) | 1996-08-29 | 2003-04-15 | Raytheon Company | Embedded vertical solenoid inductors for RF high power application |
US6203516B1 (en) | 1996-08-29 | 2001-03-20 | Bausch & Lomb Surgical, Inc. | Phacoemulsification device and method for using dual loop frequency and power control |
JP2917949B2 (en) | 1996-12-20 | 1999-07-12 | 日本電気株式会社 | Power amplification device and power amplification method |
US6008703A (en) | 1997-01-31 | 1999-12-28 | Massachusetts Institute Of Technology | Digital compensation for wideband modulation of a phase locked loop frequency synthesizer |
US6384540B1 (en) * | 1997-02-24 | 2002-05-07 | Advanced Energy Industries, Inc. | System for high power RF plasma processing |
US5834975A (en) * | 1997-03-12 | 1998-11-10 | Rockwell Science Center, Llc | Integrated variable gain power amplifier and method |
JP3791115B2 (en) | 1997-05-09 | 2006-06-28 | ソニー株式会社 | High frequency amplifier circuit, transmitter circuit and receiver circuit |
JP3094955B2 (en) | 1997-06-23 | 2000-10-03 | 日本電気株式会社 | Transmission amplifier control circuit |
US5926068A (en) | 1997-10-16 | 1999-07-20 | Kabushiki Kaisha Toshiba | Variable gain amplifier or analog multiplexer with feedforward current blocking |
US6160455A (en) | 1998-03-10 | 2000-12-12 | Indigo Manufacturing Inc. | Derived power supply for composite bridge amplifiers |
US6285251B1 (en) | 1998-04-02 | 2001-09-04 | Ericsson Inc. | Amplification systems and methods using fixed and modulated power supply voltages and buck-boost control |
US6137354A (en) | 1998-05-18 | 2000-10-24 | Omnipoint Corporation | Bypassable amplifier |
EP0961412B1 (en) | 1998-05-29 | 2004-10-06 | Motorola Semiconducteurs S.A. | Frequency synthesiser |
CA2355930C (en) | 1999-01-22 | 2011-01-04 | Multigig Limited | Electronic circuitry |
US6121843A (en) | 1999-06-04 | 2000-09-19 | Raytheon Company | Charge mode capacitor transimpedance amplifier |
US6430403B1 (en) | 1999-06-10 | 2002-08-06 | Lucent Technologies Inc. | Temperature compensated, zero bias RF detector circuit |
DE69925259T2 (en) | 1999-06-30 | 2006-02-23 | Siemens Ag | RECEIVER WITH RE-COUPLING CIRCUIT FOR THE REINFORCEMENT CONTROL |
US6232841B1 (en) | 1999-07-01 | 2001-05-15 | Rockwell Science Center, Llc | Integrated tunable high efficiency power amplifier |
US6160449A (en) * | 1999-07-22 | 2000-12-12 | Motorola, Inc. | Power amplifying circuit with load adjust for control of adjacent and alternate channel power |
US6252455B1 (en) | 1999-10-07 | 2001-06-26 | Motorola, Inc. | Method and apparatus for efficient signal amplification |
US6211728B1 (en) | 1999-11-16 | 2001-04-03 | Texas Instruments Incorporated | Modulation scheme for filterless switching amplifiers |
EP1111793B1 (en) | 1999-12-13 | 2003-11-05 | Matsushita Electric Industrial Co., Ltd. | Frequency synthesizer apparatus equipped with delta-sigma modulator in fraction part control circuit |
JP2001308649A (en) | 2000-04-25 | 2001-11-02 | Sharp Corp | High-frequency power amplifier and communication device |
US6445248B1 (en) | 2000-04-28 | 2002-09-03 | Analog Devices, Inc. | Low noise amplifier having sequentially interpolated gain stages |
US6825726B2 (en) | 2000-07-12 | 2004-11-30 | Indigo Manufacturing Inc. | Power amplifier with multiple power supplies |
US6756849B2 (en) | 2000-09-12 | 2004-06-29 | Dupuis Timothy J. | Absolute power detector |
US6917245B2 (en) | 2000-09-12 | 2005-07-12 | Silicon Laboratories, Inc. | Absolute power detector |
US7068987B2 (en) | 2000-10-02 | 2006-06-27 | Conexant, Inc. | Packet acquisition and channel tracking for a wireless communication device configured in a zero intermediate frequency architecture |
US6856199B2 (en) | 2000-10-10 | 2005-02-15 | California Institute Of Technology | Reconfigurable distributed active transformers |
JP5255744B2 (en) | 2000-10-10 | 2013-08-07 | カリフォルニア・インスティテュート・オブ・テクノロジー | E / F class switching power amplifier |
CN1294698C (en) | 2000-10-10 | 2007-01-10 | 加利福尼亚技术协会 | Distributed circular geometry power amplifier architecture |
WO2002045283A2 (en) | 2000-11-29 | 2002-06-06 | Broadcom Corporation | Integrated direct conversion satellite tuner |
JP3979485B2 (en) | 2001-01-12 | 2007-09-19 | 株式会社ルネサステクノロジ | Semiconductor integrated circuit for signal processing and wireless communication system |
US6580318B2 (en) | 2001-03-08 | 2003-06-17 | Maxim Integrated Products, Inc. | Method and apparatus for protecting radio frequency power amplifiers |
AU2002231210A1 (en) | 2001-03-14 | 2002-10-03 | California Institute Of Technology | Concurrent dual-band receiver architecture |
US6509722B2 (en) | 2001-05-01 | 2003-01-21 | Agere Systems Inc. | Dynamic input stage biasing for low quiescent current amplifiers |
US7346134B2 (en) | 2001-05-15 | 2008-03-18 | Finesse Wireless, Inc. | Radio receiver |
US6424227B1 (en) * | 2001-05-23 | 2002-07-23 | National Scientific Corporation | Monolithic balanced RF power amplifier |
US6400227B1 (en) | 2001-05-31 | 2002-06-04 | Analog Devices, Inc. | Stepped gain controlled RF driver amplifier in CMOS |
US7062237B2 (en) | 2001-06-05 | 2006-06-13 | Telefonaktiebolaget Lm Ericsson (Publ) | Power amplifier (PA) with improved power regulation |
US6498534B1 (en) | 2001-06-15 | 2002-12-24 | Lsi Logic Corporation | Amplifier circuit for line driver |
KR20030002452A (en) | 2001-06-29 | 2003-01-09 | 엘지전자 주식회사 | Triple band embodiment circuit in mobile phone |
US6577219B2 (en) | 2001-06-29 | 2003-06-10 | Koninklijke Philips Electronics N.V. | Multiple-interleaved integrated circuit transformer |
JP2003152455A (en) | 2001-11-14 | 2003-05-23 | Nippon Dempa Kogyo Co Ltd | High-frequency oscillator using transmission line type resonator |
JP3852919B2 (en) | 2001-12-25 | 2006-12-06 | 株式会社東芝 | Wireless receiver |
US7095819B2 (en) | 2001-12-26 | 2006-08-22 | Texas Instruments Incorporated | Direct modulation architecture for amplitude and phase modulated signals in multi-mode signal transmission |
US7035616B2 (en) | 2002-01-04 | 2006-04-25 | International Business Machines Corporation | Two-stage variable-gain mixer employing shunt feedback |
JP4041323B2 (en) | 2002-03-12 | 2008-01-30 | 松下電器産業株式会社 | Frequency modulation device, frequency modulation method, and radio circuit device |
JP2004039390A (en) | 2002-07-02 | 2004-02-05 | Ushio Inc | High-pressure discharge lamp lighting device |
US6653891B1 (en) | 2002-07-09 | 2003-11-25 | Intel Corporation | Voltage regulation |
US6707367B2 (en) | 2002-07-23 | 2004-03-16 | Broadcom, Corp. | On-chip multiple tap transformer and inductor |
US7330072B2 (en) | 2002-08-01 | 2008-02-12 | Telefonaktiebolaget Lm Ericsson (Publ) | Circuit for power amplification |
US7058374B2 (en) | 2002-10-15 | 2006-06-06 | Skyworks Solutions, Inc. | Low noise switching voltage regulator |
ATE406688T1 (en) | 2002-10-18 | 2008-09-15 | California Inst Of Techn | OSCILLATORS WITH CIRCULAR GEOMETRY |
US7136431B2 (en) | 2002-10-24 | 2006-11-14 | Broadcom Corporation | DC offset correcting in a direct conversion or very low IF receiver |
JP4282998B2 (en) | 2003-01-08 | 2009-06-24 | パナソニック株式会社 | Modulator and correction method thereof |
US6940981B2 (en) | 2003-03-12 | 2005-09-06 | Qsc Audio Products, Inc. | Apparatus and method of limiting power applied to a loudspeaker |
US7092692B2 (en) | 2003-03-31 | 2006-08-15 | Agency For Science, Technology And Research | Threshold voltage (Vth), power supply (VDD), and temperature compensation bias circuit for CMOS passive mixer |
US6982605B2 (en) | 2003-05-01 | 2006-01-03 | Freescale Semiconductor, Inc. | Transformer coupled oscillator and method |
US6809586B1 (en) | 2003-05-13 | 2004-10-26 | Raytheon Company | Digital switching power amplifier |
US8351891B2 (en) | 2003-05-30 | 2013-01-08 | The Regents Of The University Of California | Wideband distributed mixers |
US6999747B2 (en) | 2003-06-22 | 2006-02-14 | Realtek Semiconductor Corp. | Passive harmonic switch mixer |
US7170341B2 (en) | 2003-08-05 | 2007-01-30 | Motorola, Inc. | Low power consumption adaptive power amplifier |
US6812771B1 (en) | 2003-09-16 | 2004-11-02 | Analog Devices, Inc. | Digitally-controlled, variable-gain mixer and amplifier structures |
US7376400B2 (en) | 2003-09-25 | 2008-05-20 | Texas Instruments Incorporated | System and method for digital radio receiver |
US7276966B1 (en) | 2003-10-28 | 2007-10-02 | Stmicroelectronics N.V. | Radio frequency envelope apparatus and method |
US20050107043A1 (en) | 2003-11-13 | 2005-05-19 | Maxim Integrated Products, Inc. | Integration of diversity switch in combination with a T/R switch for a radio transceiver on a single chip |
JP4241466B2 (en) | 2004-03-29 | 2009-03-18 | 日本電気株式会社 | Differential amplifier, digital / analog converter and display device |
US7272375B2 (en) | 2004-06-30 | 2007-09-18 | Silicon Laboratories Inc. | Integrated low-IF terrestrial audio broadcast receiver and associated method |
US7129784B2 (en) | 2004-10-28 | 2006-10-31 | Broadcom Corporation | Multilevel power amplifier architecture using multi-tap transformer |
US7579906B2 (en) | 2004-11-12 | 2009-08-25 | National Semiconductor Corporation | System and method for providing a low power low voltage data detection circuit for RF AM signals in EPC0 compliant RFID tags |
KR100596005B1 (en) | 2004-11-30 | 2006-07-05 | 한국전자통신연구원 | Demodulation circuit |
US7274253B2 (en) | 2005-03-28 | 2007-09-25 | Broadcom Corporation | Transmitter apparatus with extended gain control |
US7336129B2 (en) | 2006-01-24 | 2008-02-26 | Broadcom Corporation | Analog amplitude detector |
ITTO20060515A1 (en) | 2006-07-14 | 2008-01-15 | St Microelectronics Srl | "DEVICE FOR REVEALING THE PEAK VALUE OF A SIGNAL" |
-
2003
- 2003-03-11 US US10/386,001 patent/US6856199B2/en not_active Expired - Lifetime
-
2005
- 2005-01-18 US US11/037,527 patent/US7119619B2/en not_active Expired - Lifetime
-
2006
- 2006-10-06 US US11/544,895 patent/US7330076B2/en not_active Expired - Lifetime
-
2008
- 2008-02-08 US US12/069,263 patent/US7733183B2/en not_active Expired - Lifetime
-
2010
- 2010-06-08 US US12/796,432 patent/US8018283B2/en not_active Expired - Fee Related
-
2011
- 2011-09-13 US US13/231,871 patent/US8350625B2/en not_active Expired - Lifetime
Patent Citations (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3098200A (en) | 1956-10-29 | 1963-07-16 | Honeywell Regulator Co | Semiconductor oscillator and amplifier |
US3157839A (en) | 1962-02-01 | 1964-11-17 | Harry B Brown | Transistorized bridge amplifier with a bias compensating circuit therefor |
FR1413073A (en) | 1964-01-22 | 1965-10-08 | Portenseigne Ets Marcel | Improvements to wireless energy distributors |
DE1276764B (en) | 1965-04-15 | 1968-09-05 | Deutsches Post Rundfunk Und Fe | High frequency distributor |
US3703685A (en) | 1969-09-10 | 1972-11-21 | Labtron Corp Of America | Multiband antenna with associated r.f. amplifier |
US3919660A (en) | 1971-02-08 | 1975-11-11 | Bell Telephone Labor Inc | Amplifiers with impedance-matched inputs and outputs |
US4283685A (en) | 1979-12-13 | 1981-08-11 | Raytheon Company | Waveguide-to-cylindrical array transition |
US4305043A (en) | 1980-03-03 | 1981-12-08 | Ford Aerospace & Communications Corporation | Coupler having arbitrary impedance transformation ratio and arbitrary coubling ratio |
US4706038A (en) | 1986-09-29 | 1987-11-10 | Motorola, Inc. | Wideband linear Darlington cascode amplifier |
EP0379202A2 (en) | 1989-01-19 | 1990-07-25 | Fujitsu Limited | Phase inverter and push-pull amplifier using the same |
US4916410A (en) | 1989-05-01 | 1990-04-10 | E-Systems, Inc. | Hybrid-balun for splitting/combining RF power |
US5477370A (en) | 1989-12-01 | 1995-12-19 | Scientific-Atlanta, Inc. | Push-pull optical receiver having gain control |
US5066925A (en) | 1990-12-10 | 1991-11-19 | Westinghouse Electric Corp. | Multi push-pull MMIC power amplifier |
US5130664A (en) | 1991-03-07 | 1992-07-14 | C-Cor Electronics, Inc. | One GHZ CATV repeater station |
EP0556398A1 (en) | 1991-03-29 | 1993-08-25 | Anritsu Corporation | Wide band frequency allotment type signal selection device utilizing electromagnetic coupling |
US5223800A (en) | 1991-09-30 | 1993-06-29 | Itt Corporation | Distributed arrays of microelectronic amplifiers |
US5208725A (en) | 1992-08-19 | 1993-05-04 | Akcasu Osman E | High capacitance structure in a semiconductor device |
US5793253A (en) | 1995-04-28 | 1998-08-11 | Unisys Corporation | High power solid state microwave transmitter |
US5612647A (en) | 1995-06-30 | 1997-03-18 | Harris Corporation | RF power amplifier system having an improved drive system |
US5742205A (en) * | 1995-07-27 | 1998-04-21 | Scientific-Atlanta, Inc. | Field effect transistor cable television line amplifier |
US5920240A (en) | 1996-06-19 | 1999-07-06 | The Regents Of The University Of California | High efficiency broadband coaxial power combiner/splitter with radial slotline cards |
US5939766A (en) | 1996-07-24 | 1999-08-17 | Advanced Micro Devices, Inc. | High quality capacitor for sub-micrometer integrated circuits |
US5973557A (en) | 1996-10-18 | 1999-10-26 | Matsushita Electric Industrial Co., Ltd. | High efficiency linear power amplifier of plural frequency bands and high efficiency power amplifier |
US6121842A (en) | 1997-05-21 | 2000-09-19 | Raytheon Company | Cascode amplifier |
US6011438A (en) | 1997-11-27 | 2000-01-04 | Nec Corporation | Push-pull wideband semiconductor amplifier |
US6114911A (en) | 1998-03-25 | 2000-09-05 | Matsushita Electric Industrial Co., Ltd. | Power amplifier |
US6057571A (en) | 1998-03-31 | 2000-05-02 | Lsi Logic Corporation | High aspect ratio, metal-to-metal, linear capacitor for an integrated circuit |
US6417535B1 (en) | 1998-12-23 | 2002-07-09 | Lsi Logic Corporation | Vertical interdigitated metal-insulator-metal capacitor for an integrated circuit |
US6107885A (en) * | 1999-01-25 | 2000-08-22 | General Instrument Corporation | Wideband linear GaAsFET ternate cascode amplifier |
US6351185B1 (en) | 1999-08-16 | 2002-02-26 | Globespan, Inc. | Increased output swing line drivers for operation at supply voltages that exceed the breakdown voltage of the integrated circuit technology |
WO2001056171A2 (en) | 2000-01-25 | 2001-08-02 | Paradigm Wireless Communications, Llc | Switch assembly with a multi-pole switch for combining amplified rf signals to a single rf signal |
US6383858B1 (en) | 2000-02-16 | 2002-05-07 | Agere Systems Guardian Corp. | Interdigitated capacitor structure for use in an integrated circuit |
US6448847B1 (en) | 2000-09-12 | 2002-09-10 | Silicon Laboratories, Inc. | Apparatus and method for providing differential-to-single ended conversion and impedance transformation |
US6385033B1 (en) | 2000-09-29 | 2002-05-07 | Intel Corporation | Fingered capacitor in an integrated circuit |
Non-Patent Citations (15)
Title |
---|
"7-MHz, 1.1-kW Demonstration of the New E/F<SUB>2 ,odd </SUB>Switching Amplifier Class," Kee et al., Department of Electrical Engineering, California Institute of Technology, Pasadena, CA 91125, 4 pgs., 2001. |
"A 1.9-GHz, 1-W CMOS Class-E Power Amplifier for Wireless Communications," King-Chun Tsai et al., IEEE Journal of Solid-State Circuits, vol. 34, No. 7, pp. 962-970, Jul. 1999. |
"A 2.4-GHz, 2.2-W, 2-V Fully Integrated CMOS Circular-Geometry Active-Transformer Power Amplifier," Submitted to CICC-IEEE Custom Integrated Circuits Conference, San Diego, May 6-9, 2001, Aoki et al., Department of Electrical Engineering, California Institute of Technology, Pasadena, Ca 91125, 5 pgs., May 2001. |
"A 900-MHz Fully-Integrated SOI Power Amplifier for Single-Chip Wireless Transceiver Applications," Tan et al., IEEE Journal of Solid-State Circuits, vol. 35, No. 10, pp. 1481-1486, Oct. 2000. |
"A Common-Gate Switched, 0.9W Class-E Power Amplifier with 41% PAE in 0.25 betam CMOS," Yoo et al., Integrated Systems Laboratory (IIS), Swiss Federal Institute of Technology (ETH), Zurich, Switzerland, 2000 Symposium on VLSI Circuits Digest of Technical Papers, pp. 56 and 57, 2000. |
"A Monolithic 2.5 V, 1 W Silicon Bipolar Power Amplifier with 55% PAE at 1.9 GHz," Simbürger et al., IEEE MTT-S Digest, pp. 853-856, 2000. |
"A Monolithic Transformer Coupled 5-W Silicon Power Amplifier with 59% PAE at 0.9 GHz," Simbürger et al., IEEE Journal of Solid-State Circuits, vol. 34, No. 12, pp. 1881-1892, Dec. 1999. |
"Design and Optimization of CMOS RF Power Amplifiers," Gupta et al., IEEE Journal of Solid-State Circuits, vol. 36, No. 2, pp. 166-175, Feb. 2001. |
"Distributed Active Transformer-A New Power-Combination and Impedance-Transformation Technique," Aoki et al., IEEE Transactions on Microwave Theory and Techniques, vol. 50, No. 1, pp. 316-3331, Jan. 2002. |
"High Power-Added Efficiency MMIC Amplifier for 2.4 GHz Wireless Communications," Portilla et al., IEEE Journal of Solid-State Circuits, vol. 34, No. 1, Jan. 1999, 4 pgs. |
"Monolithic Transformers for Silicon RF IC Design," John R. Long, IEEE Journal of Solid-State Circuits, vol. 35, No. 9, pp. 1368-1382, Sep. 2000. |
"Solid State Power Amplifier Using Impedance-Transforming Branch-Line Couplers for L-Band Satellite Systems," Robertson et al., Proceedings of the 23<SUP>rd </SUP>European Microwave Conference, Madrid, Sep.6-9, 1993, Proceedings of the European Microwave Conference, Turnbridge Wells, Reed Exhibition Company, GB, Sep. 6, 1993, pp. 448-450. |
"The Modeling, Characterization, and Design of Monolithic Inductors for Silicon RF IC's," Long et al., IEEE Journal of Solid-State Circuits, vol. 32, No. 3, pp. 357-369, Mar. 1997. |
Search Report for PCT/US01/31813 dated Jun. 17, 2003 in PCT filing from parent U.S. Appl. No. 09/974,578, 9 pgs. |
Search Report for PCT/US03/07157 dated Mar. 29, 2004, 4 pgs. |
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Also Published As
Publication number | Publication date |
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US20030169113A1 (en) | 2003-09-11 |
US20050140447A1 (en) | 2005-06-30 |
US8350625B2 (en) | 2013-01-08 |
US20080204139A1 (en) | 2008-08-28 |
US20100244955A1 (en) | 2010-09-30 |
US20120001692A1 (en) | 2012-01-05 |
US7733183B2 (en) | 2010-06-08 |
US20070030071A1 (en) | 2007-02-08 |
US8018283B2 (en) | 2011-09-13 |
US6856199B2 (en) | 2005-02-15 |
US7119619B2 (en) | 2006-10-10 |
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