US7344928B2 - Patterned-print thin-film transistors with top gate geometry - Google Patents
Patterned-print thin-film transistors with top gate geometry Download PDFInfo
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- US7344928B2 US7344928B2 US11/193,847 US19384705A US7344928B2 US 7344928 B2 US7344928 B2 US 7344928B2 US 19384705 A US19384705 A US 19384705A US 7344928 B2 US7344928 B2 US 7344928B2
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Images
Classifications
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
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- H—ELECTRICITY
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
Abstract
Description
Claims (18)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/193,847 US7344928B2 (en) | 2005-07-28 | 2005-07-28 | Patterned-print thin-film transistors with top gate geometry |
EP06117533A EP1748477B1 (en) | 2005-07-28 | 2006-07-20 | Fabrication method for thin-film transistors with top gate geometry |
DE602006009192T DE602006009192D1 (en) | 2005-07-28 | 2006-07-20 | Process for the production of thin-film transistors with top-gate geometry |
JP2006201598A JP5296303B2 (en) | 2005-07-28 | 2006-07-25 | Electrical component manufacturing method and electrical component structure |
US12/018,794 US7804090B2 (en) | 2005-07-28 | 2008-01-23 | Patterned-print thin-film transistors with top gate geometry |
US12/817,127 US7884361B2 (en) | 2005-07-28 | 2010-06-16 | Pattern-print thin-film transistors with top gate geometry |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/193,847 US7344928B2 (en) | 2005-07-28 | 2005-07-28 | Patterned-print thin-film transistors with top gate geometry |
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US12/018,794 Division US7804090B2 (en) | 2005-07-28 | 2008-01-23 | Patterned-print thin-film transistors with top gate geometry |
Publications (2)
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US20070026585A1 US20070026585A1 (en) | 2007-02-01 |
US7344928B2 true US7344928B2 (en) | 2008-03-18 |
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US11/193,847 Active 2026-06-20 US7344928B2 (en) | 2005-07-28 | 2005-07-28 | Patterned-print thin-film transistors with top gate geometry |
US12/018,794 Expired - Fee Related US7804090B2 (en) | 2005-07-28 | 2008-01-23 | Patterned-print thin-film transistors with top gate geometry |
US12/817,127 Expired - Fee Related US7884361B2 (en) | 2005-07-28 | 2010-06-16 | Pattern-print thin-film transistors with top gate geometry |
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Application Number | Title | Priority Date | Filing Date |
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US12/018,794 Expired - Fee Related US7804090B2 (en) | 2005-07-28 | 2008-01-23 | Patterned-print thin-film transistors with top gate geometry |
US12/817,127 Expired - Fee Related US7884361B2 (en) | 2005-07-28 | 2010-06-16 | Pattern-print thin-film transistors with top gate geometry |
Country Status (4)
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US (3) | US7344928B2 (en) |
EP (1) | EP1748477B1 (en) |
JP (1) | JP5296303B2 (en) |
DE (1) | DE602006009192D1 (en) |
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US20090166612A1 (en) * | 2006-03-29 | 2009-07-02 | Cain Paul A | Techniques for Device Fabrication with Self-Aligned Electrodes |
US20100207113A1 (en) * | 2007-10-11 | 2010-08-19 | Kenji Kasahara | Thin film active element, organic light emitting device, display device, electronic device, and manufacturing method of thin film active element |
US20100301336A1 (en) * | 2009-06-02 | 2010-12-02 | International Business Machines Corporation | Method to Improve Nucleation of Materials on Graphene and Carbon Nanotubes |
US20110095342A1 (en) * | 2009-10-23 | 2011-04-28 | Palo Alto Research Center Incorporated | Printed Material Constrained By Well Structures And Devices Including Same |
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US7459400B2 (en) * | 2005-07-18 | 2008-12-02 | Palo Alto Research Center Incorporated | Patterned structures fabricated by printing mask over lift-off pattern |
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Also Published As
Publication number | Publication date |
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JP2007036247A (en) | 2007-02-08 |
EP1748477A2 (en) | 2007-01-31 |
US20080121884A1 (en) | 2008-05-29 |
JP5296303B2 (en) | 2013-09-25 |
US20070026585A1 (en) | 2007-02-01 |
US7804090B2 (en) | 2010-09-28 |
EP1748477B1 (en) | 2009-09-16 |
DE602006009192D1 (en) | 2009-10-29 |
US7884361B2 (en) | 2011-02-08 |
EP1748477A3 (en) | 2008-02-20 |
US20100252927A1 (en) | 2010-10-07 |
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