US7393743B2 - Methods of forming a plurality of capacitors - Google Patents
Methods of forming a plurality of capacitors Download PDFInfo
- Publication number
- US7393743B2 US7393743B2 US11/724,484 US72448407A US7393743B2 US 7393743 B2 US7393743 B2 US 7393743B2 US 72448407 A US72448407 A US 72448407A US 7393743 B2 US7393743 B2 US 7393743B2
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- US
- United States
- Prior art keywords
- capacitor electrode
- forming
- forming material
- capacitor
- individual
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (25)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/724,484 US7393743B2 (en) | 2004-08-27 | 2007-03-14 | Methods of forming a plurality of capacitors |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/929,037 US7439152B2 (en) | 2004-08-27 | 2004-08-27 | Methods of forming a plurality of capacitors |
US11/724,484 US7393743B2 (en) | 2004-08-27 | 2007-03-14 | Methods of forming a plurality of capacitors |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/929,037 Division US7439152B2 (en) | 2004-08-27 | 2004-08-27 | Methods of forming a plurality of capacitors |
Publications (2)
Publication Number | Publication Date |
---|---|
US20070161202A1 US20070161202A1 (en) | 2007-07-12 |
US7393743B2 true US7393743B2 (en) | 2008-07-01 |
Family
ID=35943860
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/929,037 Expired - Fee Related US7439152B2 (en) | 2004-08-27 | 2004-08-27 | Methods of forming a plurality of capacitors |
US11/477,957 Expired - Fee Related US7534694B2 (en) | 2004-08-27 | 2006-06-28 | Methods of forming a plurality of capacitors |
US11/724,500 Expired - Fee Related US7445991B2 (en) | 2004-08-27 | 2007-03-14 | Methods of forming a plurality of capacitors |
US11/724,484 Expired - Fee Related US7393743B2 (en) | 2004-08-27 | 2007-03-14 | Methods of forming a plurality of capacitors |
Family Applications Before (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/929,037 Expired - Fee Related US7439152B2 (en) | 2004-08-27 | 2004-08-27 | Methods of forming a plurality of capacitors |
US11/477,957 Expired - Fee Related US7534694B2 (en) | 2004-08-27 | 2006-06-28 | Methods of forming a plurality of capacitors |
US11/724,500 Expired - Fee Related US7445991B2 (en) | 2004-08-27 | 2007-03-14 | Methods of forming a plurality of capacitors |
Country Status (1)
Country | Link |
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US (4) | US7439152B2 (en) |
Cited By (13)
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US20080045034A1 (en) * | 2006-08-17 | 2008-02-21 | Micron Technology, Inc. | Methods for forming semiconductor constructions, and methods for selectively etching silicon nitride relative to conductive material |
US20090011585A1 (en) * | 2007-07-05 | 2009-01-08 | Marsh Eugene P | Methods of Etching Nanodots, Methods of Removing Nanodots From Substrates, Methods of Fabricating Integrated Circuit Devices, Methods of Etching a Layer Comprising a Late Transition Metal, and Methods of Removing a Layer Comprising a Late Transition Metal From a Substrate |
US8163613B2 (en) | 2008-07-09 | 2012-04-24 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US8274777B2 (en) | 2008-04-08 | 2012-09-25 | Micron Technology, Inc. | High aspect ratio openings |
US8388851B2 (en) | 2008-01-08 | 2013-03-05 | Micron Technology, Inc. | Capacitor forming methods |
US8450164B2 (en) | 2007-08-13 | 2013-05-28 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US8518788B2 (en) | 2010-08-11 | 2013-08-27 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US8652926B1 (en) | 2012-07-26 | 2014-02-18 | Micron Technology, Inc. | Methods of forming capacitors |
US8912629B2 (en) | 2011-03-14 | 2014-12-16 | Samsung Electronics Co., Ltd. | Semiconductor devices and methods for fabricating the same |
US8946043B2 (en) | 2011-12-21 | 2015-02-03 | Micron Technology, Inc. | Methods of forming capacitors |
US9018733B1 (en) * | 2014-03-10 | 2015-04-28 | Inotera Memories, Inc. | Capacitor, storage node of the capacitor, and method of forming the same |
US9076680B2 (en) | 2011-10-18 | 2015-07-07 | Micron Technology, Inc. | Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the array |
US10515801B2 (en) | 2007-06-04 | 2019-12-24 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
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US7125781B2 (en) * | 2003-09-04 | 2006-10-24 | Micron Technology, Inc. | Methods of forming capacitor devices |
US7067385B2 (en) * | 2003-09-04 | 2006-06-27 | Micron Technology, Inc. | Support for vertically oriented capacitors during the formation of a semiconductor device |
EP1732134B1 (en) * | 2004-02-27 | 2012-10-24 | National University Corporation Tohoku Unversity | Solid-state imagine device, line sensor, optical sensor, and method for operating solid-state imaging device |
US7387939B2 (en) * | 2004-07-19 | 2008-06-17 | Micron Technology, Inc. | Methods of forming semiconductor structures and capacitor devices |
US7202127B2 (en) * | 2004-08-27 | 2007-04-10 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US7439152B2 (en) * | 2004-08-27 | 2008-10-21 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US20060046055A1 (en) * | 2004-08-30 | 2006-03-02 | Nan Ya Plastics Corporation | Superfine fiber containing grey dope dyed component and the fabric made of the same |
US7320911B2 (en) * | 2004-12-06 | 2008-01-22 | Micron Technology, Inc. | Methods of forming pluralities of capacitors |
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US7557015B2 (en) * | 2005-03-18 | 2009-07-07 | Micron Technology, Inc. | Methods of forming pluralities of capacitors |
US7544563B2 (en) * | 2005-05-18 | 2009-06-09 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US7517753B2 (en) | 2005-05-18 | 2009-04-14 | Micron Technology, Inc. | Methods of forming pluralities of capacitors |
US7199005B2 (en) * | 2005-08-02 | 2007-04-03 | Micron Technology, Inc. | Methods of forming pluralities of capacitors |
US7557013B2 (en) * | 2006-04-10 | 2009-07-07 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
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US8852851B2 (en) | 2006-07-10 | 2014-10-07 | Micron Technology, Inc. | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
US7902081B2 (en) * | 2006-10-11 | 2011-03-08 | Micron Technology, Inc. | Methods of etching polysilicon and methods of forming pluralities of capacitors |
US7785962B2 (en) * | 2007-02-26 | 2010-08-31 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
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US7989307B2 (en) | 2008-05-05 | 2011-08-02 | Micron Technology, Inc. | Methods of forming isolated active areas, trenches, and conductive lines in semiconductor structures and semiconductor structures including the same |
US10151981B2 (en) | 2008-05-22 | 2018-12-11 | Micron Technology, Inc. | Methods of forming structures supported by semiconductor substrates |
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US8247302B2 (en) | 2008-12-04 | 2012-08-21 | Micron Technology, Inc. | Methods of fabricating substrates |
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US8455341B2 (en) | 2010-09-02 | 2013-06-04 | Micron Technology, Inc. | Methods of forming features of integrated circuitry |
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US8921977B2 (en) * | 2011-12-21 | 2014-12-30 | Nan Ya Technology Corporation | Capacitor array and method of fabricating the same |
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US10964475B2 (en) * | 2019-01-28 | 2021-03-30 | Micron Technology, Inc. | Formation of a capacitor using a sacrificial layer |
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Also Published As
Publication number | Publication date |
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US20060046420A1 (en) | 2006-03-02 |
US20070173030A1 (en) | 2007-07-26 |
US7445991B2 (en) | 2008-11-04 |
US20060246678A1 (en) | 2006-11-02 |
US7439152B2 (en) | 2008-10-21 |
US20070161202A1 (en) | 2007-07-12 |
US7534694B2 (en) | 2009-05-19 |
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