US7446374B2 - High density trench FET with integrated Schottky diode and method of manufacture - Google Patents
High density trench FET with integrated Schottky diode and method of manufacture Download PDFInfo
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- US7446374B2 US7446374B2 US11/388,790 US38879006A US7446374B2 US 7446374 B2 US7446374 B2 US 7446374B2 US 38879006 A US38879006 A US 38879006A US 7446374 B2 US7446374 B2 US 7446374B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66727—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the source electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7806—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a Schottky barrier diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
Abstract
Description
Claims (28)
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/388,790 US7446374B2 (en) | 2006-03-24 | 2006-03-24 | High density trench FET with integrated Schottky diode and method of manufacture |
JP2009501633A JP2009531836A (en) | 2006-03-24 | 2007-03-08 | High density trench provided in integrated Schottky diode and method of manufacturing the same |
AT0914007A AT505583A2 (en) | 2006-03-24 | 2007-03-08 | HIGH DENSITY TRENCH FET AND INTEGRATED SCHOTTKY DIODE AND MANUFACTURING METHOD |
KR1020087024224A KR101361239B1 (en) | 2006-03-24 | 2007-03-08 | High density trench fet with integrated schottky diode and method of manufacture |
DE112007000700.1T DE112007000700B4 (en) | 2006-03-24 | 2007-03-08 | High density trench FET with integrated Schottky diode and manufacturing process |
PCT/US2007/063612 WO2007112187A2 (en) | 2006-03-24 | 2007-03-08 | High density trench fet with integrated schottky diode and method of manufacture |
CN2007800190574A CN101454882B (en) | 2006-03-24 | 2007-03-08 | High density trench fet with integrated schottky diode and method of manufacture |
TW096109324A TWI443826B (en) | 2006-03-24 | 2007-03-19 | High density trench fet with integrated schottky diode and method of manufacture |
US12/249,889 US7713822B2 (en) | 2006-03-24 | 2008-10-10 | Method of forming high density trench FET with integrated Schottky diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/388,790 US7446374B2 (en) | 2006-03-24 | 2006-03-24 | High density trench FET with integrated Schottky diode and method of manufacture |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/249,889 Continuation US7713822B2 (en) | 2006-03-24 | 2008-10-10 | Method of forming high density trench FET with integrated Schottky diode |
Publications (2)
Publication Number | Publication Date |
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US20070221952A1 US20070221952A1 (en) | 2007-09-27 |
US7446374B2 true US7446374B2 (en) | 2008-11-04 |
Family
ID=38532425
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/388,790 Active 2026-08-28 US7446374B2 (en) | 2006-03-24 | 2006-03-24 | High density trench FET with integrated Schottky diode and method of manufacture |
US12/249,889 Active US7713822B2 (en) | 2006-03-24 | 2008-10-10 | Method of forming high density trench FET with integrated Schottky diode |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/249,889 Active US7713822B2 (en) | 2006-03-24 | 2008-10-10 | Method of forming high density trench FET with integrated Schottky diode |
Country Status (8)
Country | Link |
---|---|
US (2) | US7446374B2 (en) |
JP (1) | JP2009531836A (en) |
KR (1) | KR101361239B1 (en) |
CN (1) | CN101454882B (en) |
AT (1) | AT505583A2 (en) |
DE (1) | DE112007000700B4 (en) |
TW (1) | TWI443826B (en) |
WO (1) | WO2007112187A2 (en) |
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US20080001219A1 (en) * | 2005-02-11 | 2008-01-03 | Alpha & Omega Semiconductor, Inc. | Power MOS device |
US20090065861A1 (en) * | 2005-02-11 | 2009-03-12 | Alpha & Omega Semiconductor Limited | MOS device with low injection diode |
US20090065814A1 (en) * | 2005-02-11 | 2009-03-12 | Alpha & Omega Semiconductor Limited | MOS device with schottky barrier controlling layer |
US20090065855A1 (en) * | 2005-02-11 | 2009-03-12 | Alpha & Omega Semiconductor Limited | MOS device with integrated schottky diode in active region contact trench |
US20090090966A1 (en) * | 2007-10-04 | 2009-04-09 | Paul Thorup | High density fet with integrated schottky |
US20090189218A1 (en) * | 2007-12-14 | 2009-07-30 | James Pan | Structure and Method for Forming Power Devices with High Aspect Ratio Contact Openings |
US20090246923A1 (en) * | 2006-09-20 | 2009-10-01 | Chanho Park | Method of Forming Shielded Gate FET with Self-aligned Features |
US20100006928A1 (en) * | 2008-07-09 | 2010-01-14 | James Pan | Structure and Method for Forming a Shielded Gate Trench FET with an Inter-electrode Dielectric Having a Low-k Dielectric Therein |
US20110018059A1 (en) * | 2009-07-24 | 2011-01-27 | Dixie Dunn | Shield Contacts in a Shielded Gate MOSFET |
US20110062513A1 (en) * | 2009-09-16 | 2011-03-17 | Wei-Chieh Lin | Overlapping trench gate semiconductor device and manufacturing method thereof |
US7948029B2 (en) | 2005-02-11 | 2011-05-24 | Alpha And Omega Semiconductor Incorporated | MOS device with varying trench depth |
US20110136310A1 (en) * | 2009-12-09 | 2011-06-09 | Grivna Gordon M | Method of forming an insulated gate field effect transistor device having a shield electrode structure |
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Also Published As
Publication number | Publication date |
---|---|
US20070221952A1 (en) | 2007-09-27 |
WO2007112187A3 (en) | 2008-04-17 |
DE112007000700T5 (en) | 2009-01-29 |
WO2007112187A2 (en) | 2007-10-04 |
AT505583A2 (en) | 2009-02-15 |
CN101454882B (en) | 2011-08-31 |
TWI443826B (en) | 2014-07-01 |
DE112007000700B4 (en) | 2018-01-11 |
TW200742079A (en) | 2007-11-01 |
JP2009531836A (en) | 2009-09-03 |
CN101454882A (en) | 2009-06-10 |
US7713822B2 (en) | 2010-05-11 |
KR20090003306A (en) | 2009-01-09 |
US20090035900A1 (en) | 2009-02-05 |
KR101361239B1 (en) | 2014-02-11 |
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