1. A laser irradiation apparatus comprising:
- a pulsed laser oscillator configured to supply a laser light;
- an optical system configured to introduce the laser light to a processing object,
- wherein the pulsed laser introduced to the processing object has a pulse repetition rate of 10 MHz or more, and
- wherein an inequality of ct<2nd is satisfied where c is a speed of light in vacuum, n is a refractive index of a substrate with the processing object formed thereover, d is a thickness of the substrate, and t is a pulse width of the laser light.
2. The laser irradiation apparatus according to claim 1 further comprising a stage for irradiating the laser light to a processing object,
- wherein a scanning speed of the stage is in the range of several tens to several thousand mm/s.
3. The laser irradiation apparatus according to claim 1 further comprising a stage for irradiating the laser light to a processing object,
- wherein a scanning speed of the stage is 100 to 2000 mm/s.
4. The laser irradiation apparatus according to claim 1, wherein the processing object comprises a semiconductor film.
5. A laser irradiation apparatus comprising:
- a pulsed laser oscillator configured to supply a laser light;
- an optical system configured to introduce the laser light to a processing object,
- wherein the pulsed laser introduced to the processing object has a pulse repetition rate from 10 MHz to 100 GHz, and
- wherein an inequality of ct<4nd is satisfied where c is a speed of light in vacuum, n is a refractive index of a substrate with the processing object formed thereover, d is a thickness of the substrate, and t is a pulse width of the laser light.
6. The laser irradiation apparatus according to claim 5 further comprising a stage for irradiating the laser light to a processing object,
- wherein a scanning speed of the stage is in the range of several tens to several thousand mm/s.
7. The laser irradiation apparatus according to claim 5 further comprising a stage for irradiating the laser light to a processing object,
- wherein a scanning speed of the stage is 100 to 2000 mm/s.
8. The laser irradiation apparatus according to claim 5, wherein the processing object comprises a semiconductor film.
9. A laser irradiation apparatus comprising:
- a pulsed laser oscillator configured to supply a laser light;
- a non-linear optical element configured to convert a wavelength of the laser light; and
- an optical system configured to introduce the laser light whose wavelength is converted to a processing object, and to condense the laser light whose wavelength is converted on a processing object,
- wherein the pulsed laser introduced to the processing object has a pulse repetition rate of 10 MHz or more, and
- wherein an inequality of ct<2nd is satisfied where c is a speed of light in vacuum, n is a refractive index of a substrate with the processing object formed thereover, d is a thickness of the substrate, and t is a pulse width of the laser light.
10. The laser irradiation apparatus according to claim 9, wherein the laser light whose wavelength is converted has a second harmonic.
11. The laser irradiation apparatus according to claim 9, wherein the processing object comprises a semiconductor film.
12. The laser irradiation apparatus according to claim 9 further comprising a stage for irradiating the laser light to the processing object,
- wherein a scanning speed of the stage is in the range of several tens to several thousand mm/s.
13. The laser irradiation apparatus according to claim 9 further comprising a stage for irradiating the laser light to the processing object,
- wherein a scanning speed of the stage is 100 to 2000 mm/s.
14. A laser irradiation apparatus comprising:
- a pulsed laser oscillator configured to supply a pulse laser;
- a non-linear optical element configured to convert a wavelength of the laser light; and
- an optical system configured to introduce the laser light whose wavelength is converted to a processing object, and to condense the laser light whose wavelength is converted on a processing object,
- wherein the pulsed laser introduced to the processing object has a pulse repetition rate 10 MHz or more, and
- wherein an inequality of ct<4nd is satisfied where c is a speed of light in vacuum, n is a refractive index of a substrate with the processing object formed thereover, d is a thickness of the substrate, and t is a pulse width of the laser light.
15. The laser irradiation apparatus according to claim 14, wherein the laser light whose wavelength is converted has a second harmonic.
16. The laser irradiation apparatus according to claim 14, wherein the processing object comprises a semiconductor film.
17. The laser irradiation apparatus according to claim 14 further comprising a stage for irradiating the laser light to the processing object,
- wherein a scanning speed of the stage is in the range of several tens to several thousand mm/s.
18. The laser irradiation apparatus according to claim 14 further comprising a stage for irradiating the laser light to the processing object,
- wherein a scanning speed of the stage is 100 to 2000 mm/s.
19. A laser irradiation apparatus comprising:
- a pulsed laser oscillator configured to supply a pulse laser;
- a non-linear optical element configured to convert a wavelength of the laser light; and
- an optical system configured to introduce the laser light whose wavelength is converted to a processing object, and to condense the laser light whose wavelength is converted on a processing object,
- wherein the pulsed laser oscillator has a pulse repetition rate from 10 MHz to 100 GHz; and
- wherein an inequality of ct<2nd is satisfied where c is a speed of light in vacuum, n is a refractive index of a substrate with the processing object formed thereover, d is a thickness of the substrate, and t is a pulse width of the laser light.
20. The laser irradiation apparatus according to claim 19, wherein the laser light whose wavelength is converted has a second harmonic.
21. The laser irradiation apparatus according to claim 19, wherein the processing object comprises a semiconductor film.
22. The laser irradiation apparatus according to claim 19 further comprising a stage for irradiating the laser light to the processing object,
- wherein a scanning speed of the stage is in the range of several tens to several thousand mm/s.
23. The laser irradiation apparatus according to claim 19 further comprising a stage for irradiating the laser light to the processing object,
- wherein a scanning speed of the stage is 100 to 2000 mm/s.
24. A laser irradiation apparatus comprising:
- a pulsed laser oscillator configured to supply a pulse laser;
- a non-linear optical element configured to convert a wavelength of the laser light; and
- an optical system configured to introduce the laser light whose wavelength is converted to a processing object, and to condense the laser light whose wavelength is converted on a processing object,
- wherein the pulsed laser oscillator has a pulse repetition rate from 10 MHz to 100 GHz; and
- wherein an inequality of ct<4nd is satisfied where c is a speed of light in vacuum, n is a refractive index of a substrate with the processing object formed thereover, d is a thickness of the substrate, and t is a pulse width of the laser light.
25. The laser irradiation apparatus according to claim 24, wherein the laser light whose wavelength is converted has a second harmonic.
26. The laser irradiation apparatus according to claim 24, wherein the processing object comprises a semiconductor film.
27. The laser irradiation apparatus according to claim 24 further comprising a stage for irradiating the laser light to the processing object,
- wherein a scanning speed of the stage is in the range of several tens to several thousand mm/s.
28. The laser irradiation apparatus according to claim 24 further comprising a stage for irradiating the laser light to the processing object,
- wherein a scanning speed of the stage is 100 to 2000 mm/s.
29. A laser irradiation method comprising the step of irradiating a processing object with pulsed laser light at a pulse repetition rate of 10 MHz or more,
- wherein an inequality of ct<2nd is satisfied where c is a speed of light in vacuum, n is a refractive index of a substrate with the processing object formed thereover, d is a thickness of the substrate, and t is a pulse width of the laser light.
30. The laser irradiation method according to claim 29, wherein the processing object comprises a semiconductor film.
31. The laser irradiation method according to claim 29 further comprising the step of irradiating the processing object mounted on a stage,
- wherein a scanning speed of the stage is in the range of several tens to several thousand mm/s.
32. The laser irradiation method according to claim 29 further comprising the step of irradiating the processing object mounted on a stage,
- wherein a scanning speed of the stage is 100 to 2000 mm/s.
33. A laser irradiation method comprising the step of irradiating a processing object with pulsed laser light at a pulse repetition rate from 10 MHz to 100 GHz,
- wherein an inequality of ct<4nd is satisfied where c is a speed of light in vacuum, n is a refractive index of a substrate with the processing object formed thereover, d is a thickness of the substrate, and t is a pulse width of the laser light.
34. The laser irradiation method according to claim 33, wherein the processing object comprises a semiconductor film.
35. The laser irradiation method according to claim 33 further comprising the step of irradiating the processing object mounted on a stage,
- wherein a scanning speed of the stage is in the range of several tens to several thousand mm/s.
36. The laser irradiation method according to claim 33 further comprising the step of irradiating the processing object mounted on a stage,
- wherein a scanning speed of the stage is 100 to 2000 mm/s.
37. A laser irradiation method comprising the steps of:
- converting a wavelength of laser light emitted from a pulsed laser oscillator using a non-linear optical element; and
- irradiating a processing object with the laser light whose wavelength is converted,
- wherein a pulse repetition rate of the laser light irradiated to the processing object is 10 MHz or more,
- wherein an inequality of ct<2nd is satisfied where c is a speed of light in vacuum, n is a refractive index of a substrate with the processing object formed thereover, d is a thickness of the substrate, and t is a pulse width of the laser light.
38. The laser irradiation method according to claim 37, wherein the laser light whose wavelength is converted has a second harmonic.
39. The laser irradiation method according to claim 37 further comprising the step of irradiating the processing object mounted on a stage,
- wherein a scanning speed of the stage is in the range of several tens to several thousand mm/s.
40. The laser irradiation method according to claim 37 further comprising the step of irradiating the processing object mounted on a stage,
- wherein a scanning speed of the stage is 100 to 2000 mm/s.
41. A laser irradiation method comprising the steps of:
- converting a wavelength of laser light emitted from a pulsed laser oscillator using a non-linear optical element; and
- irradiating a processing object with the laser light whose wavelength is converted,
- wherein a pulse repetition rate of the laser light irradiated to the processing object is 10 MHz or more,
- wherein an inequality of ct<4nd is satisfied where c is a speed of light in vacuum, n is a refractive index of a substrate with the processing object formed thereover, d is a thickness of the substrate, and t is a pulse width of the laser light.
42. The laser irradiation method according to claim 41, wherein the laser light whose wavelength is converted has a second harmonic.
43. The laser irradiation method according to claim 37, wherein the processing object comprises a semiconductor film.
44. The laser irradiation method according to claim 41, wherein the processing object comprises a semiconductor film.
45. The laser irradiation method according to claim 41 further comprising the step of irradiating the processing object mounted on a stage,
- wherein a scanning speed of the stage is in the range of several tens to several thousand mm/s.
46. The laser irradiation method according to claim 41 further comprising the step of irradiating the processing object mounted on a stage,
- wherein a scanning speed of the stage is 100 to 2000 mm/s.
47. A laser irradiation method comprising the steps of:
- converting a wavelength of laser light emitted from a pulsed laser oscillator using a non-linear optical element; and
- irradiating a processing object with the laser light whose wavelength is converted,
- wherein a pulse repetition rate is from 10 MHz to 100 GHz; and
- wherein an inequality of ct<2nd is satisfied where c is a speed of light in vacuum, n is a refractive index of a substrate with the processing object formed thereover, d is a thickness of the substrate, and t is a pulse width of the laser light.
48. The laser irradiation method according to claim 47, wherein the laser light whose wavelength is converted has a second harmonic.
49. The laser irradiation method according to claim 47, wherein the processing object comprises a semiconductor film.
50. The laser irradiation method according to claim 47 further comprising the step of irradiating the processing object mounted on a stage,
- wherein a scanning speed of the stage is in the range of several tens to several thousand mm/s.
51. The laser irradiation method according to claim 47 further comprising the step of irradiating the processing object mounted on a stage,
- wherein a scanning speed of the stage is 100 to 2000 mm/s.
52. A laser irradiation method comprising the steps of:
- converting a wavelength of laser light emitted from a pulsed laser oscillator using a non-linear optical element; and
- irradiating a processing object with the laser light whose wavelength is converted,
- wherein a pulse repetition rate is from 10 MHz to 100 GHz; and
- wherein an inequality of ct<4nd is satisfied where c is a speed of light in vacuum, n is a refractive index of a substrate with the processing object formed thereover, d is a thickness of the substrate, and t is a pulse width of the laser light.
53. The laser irradiation method according to claim 52, wherein the laser light whose wavelength is converted has a second harmonic.
54. The laser irradiation method according to claim 52, wherein the processing object comprises a semiconductor film.
55. The laser irradiation method according to claim 52 further comprising the step of irradiating the processing object mounted on a stage,
- wherein a scanning speed of the stage is in the range of several tens to several thousand mm/s.
56. The laser irradiation method according to claim 52 further comprising the step of irradiating the processing object mounted on a stage,
- wherein a scanning speed of the stage is 100 to 2000 mm/s.
57. A method for manufacturing a semiconductor device comprising the step of irradiating a processing object with pulsed laser light at a pulse repetition rate of 10 MHz or more,
- wherein an inequality of ct<2nd is satisfied where c is a speed of light in vacuum, n is a refractive index of a substrate with the processing object formed thereover, d is a thickness of the substrate, and t is a pulse width of the laser light.
58. The method for manufacturing a semiconductor device according to claim 57, wherein the processing object comprises a semiconductor film.
59. The method for manufacturing a semiconductor device according to claim 57 further comprising the step of irradiating the processing object mounted on a stage,
- wherein a scanning speed of the stage is in the range of several tens to several thousand mm/s.
60. The method for manufacturing a semiconductor device according to claim 57 further comprising the step of irradiating the processing object mounted on a stage,
- wherein a scanning speed of the stage is 100 to 2000 mm/s.
61. A method for manufacturing a semiconductor device comprising the step of irradiating a processing object with pulsed laser light at a pulse repetition rate from 10 MHz to 100 GHz,
- wherein an inequality of ct<4nd is satisfied where c is a speed of light in vacuum, n is a refractive index of a substrate with the processing object formed thereover, d is a thickness of the substrate, and t is a pulse width of the laser light.
62. The method for manufacturing a semiconductor device according to claim 61, wherein the processing object comprises a semiconductor film.
63. The method for manufacturing a semiconductor device according to claim 61 further comprising the step of irradiating the processing object mounted on a stage,
- wherein a scanning speed of the stage is in the range of several tens to several thousand mm/s.
64. The method for manufacturing a semiconductor device according to claim 61 further comprising the step of irradiating the processing object mounted on a stage,
- wherein a scanning speed of the stage is 100 to 2000 mm/s.
65. A method for manufacturing a semiconductor device comprising the steps of:
- converting a wavelength of laser light emitted from a pulsed laser oscillator using a non-linear optical element; and
- irradiating a processing object with laser light whose wavelength is converted,
- wherein a pulse repetition rate of the laser light irradiated to the processing object is 10 MHz or more, and
- wherein an inequality of ct<2nd is satisfied where c is a speed of light in vacuum, n is a refractive index of a substrate with the processing object formed thereover, d is a thickness of the substrate, and t is a pulse width of the laser light.
66. The method for manufacturing a semiconductor device according to claim 65, wherein the laser light whose wavelength is converted has a second harmonic.
67. The method for manufacturing a semiconductor device according to claim 65, wherein the processing object comprises a semiconductor film.
68. The method for manufacturing a semiconductor device according to claim 65 further comprising the step of irradiating the processing object mounted on a stage,
- wherein a scanning speed of the stage is in the range of several tens to several thousand mm/s.
69. The method for manufacturing a semiconductor device according to claim 65 further comprising the step of irradiating the processing object mounted on a stage,
- wherein a scanning speed of the stage is 100 to 2000 mm/s.
70. A method for manufacturing a semiconductor device comprising the steps of:
- converting a wavelength of laser light emitted from a pulsed laser oscillator using a non-linear optical element; and
- irradiating a processing object with laser light whose wavelength is converted,
- wherein a pulse repetition rate of the laser light irradiated to the processing object is 10 MHz or more,
- wherein an inequality of ct<4nd is satisfied where c is a speed of light in vacuum, n is a refractive index of a substrate with the processing object formed thereover, d is a thickness of the substrate, and t is a pulse width of the laser light.
71. The method for manufacturing a semiconductor device according to claim 70, wherein the laser light whose wavelength is converted has a second harmonic.
72. The method for manufacturing a semiconductor device according to claim 70, wherein the processing object comprises a semiconductor film.
73. The method for manufacturing a semiconductor device according to claim 70 further comprising the step of irradiating the processing object mounted on a stage,
- wherein a scanning speed of the stage is in the range of several tens to several thousand mm/s.
74. The method for manufacturing a semiconductor device according to claim 70 further comprising the step of irradiating the processing object mounted on a stage,
- wherein a scanning speed of the stage is 100 to 2000 mm/s.
75. A method for manufacturing a semiconductor device comprising the steps of:
- converting a wavelength of laser light emitted from a pulsed laser oscillator using a non-linear optical element; and
- irradiating a processing object with laser light whose wavelength is converted,
- wherein a pulse repetition rate is from 10 MHz to 100 GHz; and
- wherein an inequality of ct<2nd is satisfied where c is a speed of light in vacuum, n is a refractive index of a substrate with the processing object formed thereover, d is a thickness of the substrate, and t is a pulse width of the laser light.
76. The method for manufacturing a semiconductor device according to claim 75, wherein the laser light whose wavelength is converted has a second harmonic.
77. The method for manufacturing a semiconductor device according to claim 75, wherein the processing object comprises a semiconductor film.
78. The method for manufacturing a semiconductor device according to claim 75 further comprising the step of irradiating the processing object mounted on a stage,
- wherein a scanning speed of the stage is in the range of several tens to several thousand mm/s.
79. The method for manufacturing a semiconductor device according to claim 75 further comprising the step of irradiating the processing object mounted on a stage,
- wherein a scanning speed of the stage is 100 to 2000 mm/s.
80. A method for manufacturing a semiconductor device comprising the steps of:
- converting a wavelength of laser light emitted from a pulsed laser oscillator using a non-linear optical element; and
- irradiating a processing object with laser light whose wavelength is converted,
- wherein a pulse repetition rate is from 10 MHz to 100 GHz; and
- wherein an inequality of ct<4nd is satisfied where c is a speed of light in vacuum, n is a refractive index of a substrate with the processing object formed thereover, d is a thickness of the substrate, and t is a pulse width of the laser light.
81. The method for manufacturing a semiconductor device according to claim 80, wherein the laser light whose wavelength is converted has a second harmonic.
82. The method for manufacturing a semiconductor device according to claim 80, wherein the processing object comprises a semiconductor film.
83. The method for manufacturing a semiconductor device according to claim 80 further comprising the step of irradiating the processing object mounted on a stage,
- wherein a scanning speed of the stage is in the range of several tens to several thousand mm/s.
84. The method for manufacturing a semiconductor device according to claim 80 further comprising the step of irradiating the processing object mounted on a stage,
- wherein a scanning speed of the stage is 100 to 2000 mm/s.
