|Número de publicación||US7535048 B2|
|Tipo de publicación||Concesión|
|Número de solicitud||US 11/346,049|
|Fecha de publicación||19 May 2009|
|Fecha de presentación||2 Feb 2006|
|Fecha de prioridad||21 Jun 2002|
|También publicado como||CN1675770A, CN100407427C, EP1530803A2, US7220634, US7541242, US20040130934, US20060124998, US20060126398, US20090010075, US20090072303, WO2004001802A2, WO2004001802A3|
|Número de publicación||11346049, 346049, US 7535048 B2, US 7535048B2, US-B2-7535048, US7535048 B2, US7535048B2|
|Inventores||Kirk D. Prall, Leonard Forbes|
|Cesionario original||Micron Technology, Inc.|
|Exportar cita||BiBTeX, EndNote, RefMan|
|Citas de patentes (108), Otras citas (63), Citada por (3), Clasificaciones (29), Eventos legales (4)|
|Enlaces externos: USPTO, Cesión de USPTO, Espacenet|
This Application is a Divisional of U.S. application Ser. No. 10/738,408, titled “NROM MEMORY CELL, MEMORY ARRAY, RELATED DEVICES AND METHODS,” filed Dec. 16, 2003 issued May 22, 2007 as U.S. Pat. No. 7,220,634, which is a continuation-in-part of U.S. application Ser. No. 10/177,211, filed on Jun. 21, 2002, now abandoned, and a continuation-in-part of U.S. application Ser. No. 10/232,411, filed on Aug. 29, 2002, now abandoned, all of which are commonly assigned.
This invention relates to a NROM memory cells, arrays of such memory cells, electronic devices employing such memory cells and arrays, and methods related to such memory cells.
Various types of memory devices are used in electronic systems. Some types of memory device, such as DRAM (dynamic random access memory) provide large amounts of readable and writable data storage with modest power budget and in favorably small form factor, but are not as fast as other types of memory devices and provide volatile data storage capability. Volatile data storage means that the memory must be continuously powered in order to retain data, and the stored data are lost when the power is interrupted. Nonvolatile memories are capable of retaining data without requiring electrical power.
Other types of memory can provide read-only or read-write capabilities and non-volatile data storage, but are much slower in operation. These include CD-ROM devices, CD-WORM devices, magnetic data storage devices (hard discs, floppy discs, tapes and so forth), magneto-optical devices and the like.
Still other types of memory provide very high speed operation but also demand high power budgets. Static RAM or SRAM is an example of such memory devices.
In most computer systems, different memory types are blended to selectively gain the benefits that each technology can offer. For example, read-only memories or ROM, EEPROM and the like are typically used to store limited amounts of relatively infrequently-accessed data such as a basic input-output system. These memories are employed to store data that, in response to a power ON situation, configure a processor to be able to load larger amounts of software such as an operating system from a high capacity non-volatile memory device such as a hard drive. The operating system and application software are typically read from the high capacity memory and corresponding images are stored in DRAM.
As the processor executes instructions, some types of data may be repeatedly fetched from memory. As a result, some SRAM or other high speed memory is typically provided as “cache” memory in conjunction with the processor and may be included on the processor integrated circuit or chip and/or very near it.
Several different kinds of memory device are involved in most modern computing devices, and in many types of appliances that include automated and/or programmable features (home entertainment devices, telecommunications devices, automotive control systems etc.). As system and software complexity increase, need for additional memory increases. Desire for portability, computation power and/or practicality result in increased pressure to reduce both power consumption and circuit area per bit.
DRAMs have been developed to very high capacities in part because the memory cells can be manufactured to have a very small area, and the power draw per cell can also be made quite small. In turn, this allows memory integrated circuits to be made that incorporate millions of memory cells in each chip. Typical one-transistor, one-capacitor DRAM memory cells can be produced to have extremely small areal requirements.
Such areas are often equal to about 3 F×2 F, or less, where “F” is defined as equal to one-half of minimum pitch (see
However, because DRAMs are volatile memory devices, they require “refresh” operations. In a refresh operation, data are read out of each memory cell, amplified and written back into the DRAM. As a first result, the DRAM circuit is usually not available for other kinds of memory operations during the refresh operation. Additionally, refresh operations are carried out periodically, resulting in times during which data cannot be readily extracted from or written to DRAMs. As a second result, some amount of electrical power is always needed to store data in DRAM devices.
As a third result, boot operations for computers such as personal computers involve a period during which the computer cannot be used following power ON initiation. During this period, operating system instructions and associated data, and application instructions and associated data, are read from relatively slow, non-volatile memory, such as a conventional disc drive, are decoded by the processing unit and the resultant instructions and associated data are loaded into modules incorporating relatively rapidly-accessible, but volatile, memory such as DRAM. Other consequences flow from the properties of the memory systems included in various electronic devices and the increasingly complex software employed with them, however, these examples serve to illustrate ongoing needs.
Needed are methods and apparatus relating to non-volatile memory providing high areal data storage capacity, reprogrammability, low power consumption and relatively high data access speed.
In a first aspect, the present invention includes a method for making an array of memory cells configured to store at least one bit per one F2. The method includes doping a first region of a semiconductor substrate and incising the substrate to provide an array of substantially vertical edge surfaces. Pairs of the edge surfaces face one another and are spaced apart a distance equal to one half of a pitch of the array of edges. The method also includes doping second regions between the pairs of edge surfaces and disposing respective structures each providing an electronic memory function on at least some respective ones of the edge surfaces. The method also includes establishing electrical contacts to the first and second regions.
In another aspect, the present invention includes a method for making an array of memory cells configured to store at least one bit per one F2. The method includes disposing substantially vertical structures providing an electronic memory function spaced apart a distance equal to one half of a minimum pitch of the array and establishing electrical contacts to memory cells including the vertical structures.
In a further aspect, the present invention includes an array of memory cells configured to store at least one bit per one F2 formed using vertical structures providing an electronic memory function spaced apart a distance equal to one half of a minimum pitch of the array. The structures providing the electronic memory function are configured to store more than one bit per gate. The array also includes electrical contacts to the memory cells including the vertical structures.
In a still further aspect, the present invention includes a vertical metal oxide semiconductor field effect transistor (MOSFET) extending outwardly from a substrate, the MOSFET having a first source/drain region, a second source/drain region, a channel region between the first and the second source/drain regions, and a gate separated from the channel region by a gate insulator. A sourceline is formed in a trench adjacent to the vertical MOSFET, wherein the first source/drain region is coupled to the sourceline. A transmission line is coupled to the second source/drain region. The can be programmed MOSFET to have one of a number of charge levels trapped in the gate insulator adjacent to the first source/drain region such that the channel region has a first voltage threshold region (Vt1) and a second voltage threshold region (Vt2) and such that the programmed MOSFET operates at reduced drain source current.
These and other embodiments, aspects, advantages, and features of the present invention will be set forth in part in the description which follows, and in part will become apparent to those skilled in the art by reference to the following description of the invention and referenced drawings or by practice of the invention. The aspects, advantages, and features of the invention are realized and attained by means of the instrumentalities, procedures, and combinations particularly pointed out in the appended claims.
Embodiments of the invention are described below with reference to the following accompanying drawings.
In the following detailed description of the invention, reference is made to the accompanying drawings which form a part hereof, and in which is shown, by way of illustration, specific embodiments in which the invention may be practiced. In the drawings, like numerals describe substantially similar components throughout the several views. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. Other embodiments may be utilized and structural, logical, and electrical changes may be made without departing from the scope of the present invention.
The terms wafer and substrate used in the following description include any structure having an exposed surface with which to form the integrated circuit (IC) structure of the invention. The term substrate is understood to include semiconductor wafers. The term substrate is also used to refer to semiconductor structures during processing, and may include other layers that have been fabricated thereupon. Both wafer and substrate include doped and undoped semiconductors, epitaxial semiconductor layers supported by a base semiconductor or insulator, as well as other semiconductor structures well known to one skilled in the art. The term conductor is understood to include semiconductors, and the term insulator is defined to include any material that is less electrically conductive than the materials referred to as conductors. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is defined only by the appended claims, along with the full scope of equivalents to which such claims are entitled.
In one embodiment, the doped regions 24 are implanted n+ regions. In one embodiment, the doped regions 24 are formed by a blanket implant. In one embodiment, the caps 28 are dielectric caps and may be formed using conventional silicon nitride and conventional patterning techniques. In one embodiment, the etched recesses 22 are then etched using conventional plasma etching techniques. In one embodiment, the doped regions 26 are then doped by implantation to form n+ regions. The etched or incised recesses 22 may be formed by plasma etching, laser-assisted techniques or any other method presently known or that may be developed. In one embodiment, the recesses 22 are formed to have substantially vertical sidewalls relative to a top surface of the substrate portion 20. In one embodiment, substantially vertical means at 90 degrees to the substrate surface, plus or minus ten degrees.
In one embodiment, conventional techniques are employed to oxidize the doped regions 24 and 26 preferentially with respect to sidewalls 36. As a result, the thick oxide regions 32 are formed at the same time as a thinner oxide 42 on the sidewalls 36. These oxides also serve to isolate the doped regions 24 and 26 from what will become transistor channels along the sidewalls 36. Other techniques for isolation may be employed. For example, in one embodiment, high density plasma grown oxides may be employed. In one embodiment, spacers may be employed.
In one embodiment, conventional techniques are then employed to provide a nitride layer 44 and an oxide layer 46, as is described, for example, in “NROM: A Novel Localized Trapping, 2-Bit Nonvolatile Memory Cell”, by Boaz Eitan et al., IEEE Electron Device Letters, Vol. 21, No. 11, November 2000, pp. 543-545, IEEE Catalogue No. 0741-3106/00, or in “A True Single-Transistor Oxide-Nitride-Oxide EEPROM Device” by T. Y. Chan et al., IEEE Electron Device Letters, Vol. EDL-8, No. 3, March, 1987, pp. 93-95, IEEE Catalogue No. 0741-3106/87/0300-0093.
In one embodiment, the thin oxide 42, nitride layer 44 and oxide layer 46 combine to form the ONO layer 34, such as is employed in SONOS devices, while the polysilicon 38 forms a control gate. In operation, application of suitable electrical biases to the doped regions 24, 26 and the control gate 38 cause hot majority charge carriers to be injected into the nitride layer 44 and become trapped, providing a threshold voltage shift and thus providing multiple, alternative, measurable electrical states representing stored data. “Hot” charge carriers are not in thermal equilibrium with their environment. In other words, hot charge carriers represent a situation where a population of high kinetic energy charge carriers exist. Hot charge carriers may be electrons or holes.
SONOS devices are capable of storing more than one bit per gate 38. Typically, the hot carriers are injected into one side 47 or 47′ of the ONO layer 34, adjacent a contact, such as the region 24 or the region 26, that provides a high electrical field.
By reversing the polarity of the potentials applied to the regions 24 and 26, charge may be injected into the other side 47′ or 47 of the ONO layer 34. Thus, four electronically-discriminable and distinct states can be easily provided with a single gate 38. As a result, the structure shown in
Floating gate devices can be programmed to different charge levels that can be electrically distinct and distinguishable. As a result, it is possible to program more data than one bit into each floating gate device, and each externally addressable gate 38 thus corresponds to more than one stored bit. Typically, charge levels of 0, Q, 2Q and 3Q might be employed, where Q represents some amount of charge corresponding to a reliably-distinguishable output signal.
The density of memory arrays such as that described with reference to
With reference to
Similarly, other portions of the patterned conductive layer 62 extend from the line denoted 74, 74′ and extend upward, providing electrical communication from nodes 76, 76′, 76″ to other circuit elements. The nodes 76, 76′, 76″ provide contact to selected portions of the doped region 24.
In contrast, patterned conductive layers 64 extend from top to bottom of
Such is but on example of a simplified interconnection arrangement suitable for use with the memory devices of
In conventional operation, a drain to source voltage potential (Vds) is set up between the drain region 104 and the source region 102. A voltage potential is then applied to the gate 108 via a wordline 116. Once the voltage potential applied to the gate 108 surpasses the characteristic voltage threshold (Vt) of the MOSFET a channel 106 forms in the substrate 100 between the drain region 104 and the source region 102. Formation of the channel 106 permits conduction between the drain region 104 and the source region 102, and a current signal (Ids) can be detected at the drain region 104.
In operation of the conventional MOSFET of
There are two components to the effects of stress and hot electron injection. One component includes a threshold voltage shift due to the trapped electrons and a second component includes mobility degradation due to additional scattering of carrier electrons caused by this trapped charge and additional surface states. When a conventional MOSFET degrades, or is “stressed,” over operation in the forward direction, electrons do gradually get injected and become trapped in the gate oxide near the drain. In this portion of the conventional MOSFET there is virtually no channel underneath the gate oxide. Thus the trapped charge modulates the threshold voltage and charge mobility only slightly.
Applicant has previously described programmable memory devices and functions based on the reverse stressing of MOSFET's in a conventional CMOS process and technology in order to form programmable address decode and correction. (See generally, L. Forbes, W. P. Noble and E. H. Cloud, “MOSFET technology for programmable address decode and correction,” U.S. patent application Ser. No. 09/383,804). That disclosure, however, did not describe multistate memory cell solutions, but rather address decode and correction issues.
According to the teachings of the present invention, normal MOSFETs can be programmed by operation in the reverse direction and utilizing avalanche hot electron injection to trap electrons in the gate oxide of the MOSFET. When the programmed MOSFET is subsequently operated in the forward direction the electrons trapped in the oxide are near the source and cause the channel to have two different threshold voltage regions. The novel programmed MOSFETs of the present invention conduct significantly less current than conventional MOSFETs, particularly at low drain voltages. These electrons will remain trapped in the gate oxide unless negative gate voltages are applied. The electrons will not be removed from the gate oxide when positive or zero gate voltages are applied. Erasure can be accomplished by applying negative gate voltages and/or increasing the temperature with negative gate bias applied to cause the trapped electrons to be re-emitted back into the silicon channel of the MOSFET. (See generally, L. Forbes, E. Sun, R. Alders and J. Moll, “Field induced re-emission of electrons trapped in SiO2,” IEEE Trans. Electron Device, vol. ED-26, no. 11, pp. 1816-1818 (November 1979); S. S. B. Or, N. Hwang, and L. Forbes, “Tunneling and Thermal emission from a distribution of deep traps in SiO2,” IEEE Trans. on Electron Devices, vol. 40, no. 6, pp. 1100-1103 (June 1993); S. A. Abbas and R. C. Dockerty, “N-channel IGFET design limitations due to hot electron trapping,” IEEE Int. Electron Devices Mtg., Washington D.C., December 1975, pp. 35-38).
As stated above, multistate cell 201 is comprised of a programmed MOSFET. This programmed MOSFET has a charge 217 trapped in the gate oxide 210 adjacent to the first source/drain region 202 such that the channel region 206 has a first voltage threshold region (Vt1) and a second voltage threshold region (Vt2) in the channel 206. In one embodiment, the charge 217 trapped in the gate oxide 210 adjacent to the first source/drain region 202 includes a trapped electron charge 217. According to the teachings of the present invention and as described in more detail below, the multistate cell can be programmed to have one of a number of charge levels trapped in the gate insulator adjacent to the first source/drain region 202 such that the channel region 206 will have a first voltage threshold region (Vt1) and a second voltage threshold region (Vt2) and such that the programmed multistate cell operates at reduced drain source current.
In one embodiment of the present invention, the method is continued by subsequently operating the MOSFET in the forward direction in its programmed state during a read operation. Accordingly, the read operation includes grounding the source region 202 and precharging the drain region a fractional voltage of VDD. If the device is addressed by a wordline coupled to the gate, then its conductivity will be determined by the presence or absence of stored charge in the gate insulator. That is, a gate potential can be applied to the gate 208 by a wordline 216 in an effort to form a conduction channel between the source and the drain regions as done with addressing and reading conventional DRAM cells.
However, now in its programmed state, the conduction channel 206 of the MOSFET will have a first voltage threshold region (Vt1) adjacent to the drain region 204 and a second voltage threshold region (Vt2) adjacent to the source region 202, as explained and described in detail in connection with
Some of these effects have recently been described for use in a different device structure, called an NROM, for flash memories. This latter work in Israel and Germany is based on employing charge trapping in a silicon nitride layer in a non-conventional flash memory device structure. (See generally, B. Eitan et al., “Characterization of Channel Hot Electron Injection by the Subthreshold Slope of NROM device,” IEEE Electron Device Lett., Vol. 22, No. 11, pp. 556-558, (November 2001); B. Etian et al., “NROM: A novel localized Trapping, 2-Bit Nonvolatile Memory Cell,” IEEE Electron Device Lett., Vol. 21, No. 11, pp. 543-545, (November 2000)). Charge trapping in silicon nitride gate insulators was the basic mechanism used in MNOS memory devices (see generally, S. Sze, Physics of Semiconductor Devices, Wiley, N.Y., 1981, pp. 504-506), charge trapping in aluminum oxide gates was the mechanism used in MIOS memory devices (see generally, S. Sze, Physics of Semiconductor Devices, Wiley, N.Y., 1981, pp. 504-506), and Applicant has previously disclosed charge trapping at isolated point defects in gate insulators (see generally, L. Forbes and J. Geusic, “Memory using insulator traps,” U.S. Pat. No. 6,140,181, issued Oct. 31, 2000).
In contrast to the above work, the present invention discloses programming a MOSFET in a reverse direction to trap one of a number of charge levels near the source region and reading the device in a forward direction to form a multistate memory cell based on a modification of DRAM technology.
Prior art DRAM technology generally employs silicon oxide as the gate insulator. Further the emphasis in conventional DRAM devices is placed on trying to minimize charge trapping in the silicon oxide gate insulator. According to the teachings of the present invention, a variety of insulators are used to trap electrons more efficiently than in silicon oxide. That is, in the present invention, the multistate memory cell employs charge trapping in gate insulators such as, wet silicon oxide, silicon nitride, silicon oxynitride SON, silicon rich oxide SRO, aluminum oxide Al2O3, composite layers of these insulators such as oxide and then silicon nitride, or oxide and then aluminum oxide, or multiple layers as oxide-nitride-oxide. While the charge trapping efficiency of silicon oxide may be low such is not the case for silicon nitride or composite layers of silicon oxide and nitride.
As shown in
As shown in
As shown in
During read the multistate cell, 601-1 or 601-2, is operated in the forward direction with the sourceline 604 grounded and the bit line, 608-1 or 608-2, and respective second source/drain region or drain region, 606-1 and 606-2, of the cells precharged to some fractional voltage of Vdd. If the device is addressed by the word line, 612-1 or 612-2, then its conductivity will be determined by the presence or absence of the amount of stored charge trapped in the gate insulator as measured or compared to the reference or dummy cell and so detected using the sense amplifier 610. The operation of DRAM sense amplifiers is described, for example, in U.S. Pat. Nos. 5,627,785; 5,280,205; and 5,042,011, all assigned to Micron Technology Inc., and incorporated by reference herein. The array would thus be addressed and read in the conventional manner used in DRAM's, but programmed as multistate cells in a novel fashion.
In operation the devices would be subjected to hot electron stress in the reverse direction by biasing the sourceline 604, and read while grounding the sourceline 604 to compare a stressed multistate cell, e.g. cell 601-1, to an unstressed dummy device/cell, e.g. 601-2, as shown in
As one of ordinary skill in the art will understand upon reading this disclosure such arrays of multistate cells are conveniently realized by a modification of DRAM technology. According to the teachings of the present invention a gate insulator of the multistate cell includes gate insulators selected from the group of thicker layers of SiO2 formed by wet oxidation, SON silicon oxynitride, SRO silicon rich oxide, Al2O3 aluminum oxide, composite layers and implanted oxides with traps (L. Forbes and J. Geusic, “Memory using insulator traps,” U.S. Pat. No. 6,140,181, issued Oct. 31, 2000). Conventional transistors for address decode and sense amplifiers can be fabricated after this step with normal thin gate insulators of silicon oxide.
To illustrate these numbers, the capacitance, Ci, of the structure depends on the dielectric constant, ∈i, (which for silicon dioxide SiO2 equates to 1.06/3×10−12 F/cm), and the thickness of the insulating layers, t, (given here as 6.7×10−7 cm), such that Ci=∈i/t=((1.06×10−12 F/cm/(3×6.7×10−7 cm))=0.5×10−6 Farads/cm2 (F/cm2). This value taken over the charge storage region near the source, e.g. 20 nm×100 nm or 2×10−11 cm2, results in a capacitance value of Ci=10−17 Farads. Thus, for a change in the threshold voltage of ΔV =1.6 Volts the stored charge must be Q=C×ΔV=(10−17 Farads×1.6 Volts)=1.6×10−17 Coulombs. Since Q=Nq, the number of electrons stored is approximately Q/q=(1.6×10−17 Coulombs/1.6×10−19 Coulombs) or 100 electrons. In effect, the programmed multistate cell, or modified MOSFET is a programmed MOSFET having a charge trapped in the gate insulator adjacent to a first source/drain region, or source region, such that the channel region has a first voltage threshold region (Vt1) and a second voltage threshold region (Vt2), where Vt2 is greater than Vt1, and Vt2 is adjacent the source region such that the programmed MOSFET operates at reduced drain source current. For ΔQ=100 electrons in the dimensions given above, if the transistor has a total effective oxide thickness of 200 Å then a change in the threshold voltage of only 0.16 Volts near the source, corresponding to 10 electrons, is estimated to change the transistor current by 4 micro Amperes (μA). As stated above, the sense amplifier described in connection with
As stated above, these novel multistate cells can be used in a DRAM like array. Two transistors can occupy an area of 4 F squared (F=the minimum lithographic feature size) when viewed from above, or each memory cell consisting of one transistor utilizing an area of 2 F squared. Each transistor can now, however, store many bits so the data storage density is much higher than one bit for each 1 F squared unit area. Using a reference or dummy cell for each memory transistor where the reference transistor is in close proximity, e.g. the embodiment shown in
The column decoder 948 is connected to the sense amplifier circuit 946 via control and column select signals on column select lines 962. The sense amplifier circuit 946 receives input data destined for the memory array 942 and outputs data read from the memory array 942 over input/output (I/O) data lines 963. Data is read from the cells of the memory array 942 by activating a word line 980 (via the row decoder 944), which couples all of the memory cells corresponding to that word line to respective bit lines 960, which define the columns of the array. One or more bit lines 960 are also activated. When a particular word line 980 and bit lines 960 are activated, the sense amplifier circuit 946 connected to a bit line column detects and amplifies the conduction sensed through a given multistate cell, where in the read operation the source region of a given cell is couple to a grounded array plate (not shown), and transferred its bit line 960 by measuring the potential difference between the activated bit line 960 and a reference line which may be an inactive bit line. The operation of Memory device sense amplifiers is described, for example, in U.S. Pat. Nos. 5,627,785; 5,280,205; and 5,042,011, all assigned to Micron Technology Inc., and incorporated by reference herein.
It will be appreciated by those skilled in the art that additional circuitry and control signals can be provided, and that the memory device 1000 has been simplified to help focus on the invention. At least one of the multistate cell in NROM 1012 includes a programmed MOSFET having a charge trapped in the gate insulator adjacent to a first source/drain region, or source region, such that the channel region has a first voltage threshold region (Vt1) and a second voltage threshold region (Vt2), where Vt2 is greater than Vt1, and Vt2 is adjacent the source region such that the programmed MOSFET operates at reduced drain source current.
It will be understood that the embodiment shown in
Applications containing the novel memory cell of the present invention as described in this disclosure include electronic systems for use in memory modules, device drivers, power modules, communication modems, processor modules, and application-specific modules, and may include multilayer, multichip modules. Such circuitry can further be a subcomponent of a variety of electronic systems, such as a clock, a television, a cell phone, a personal computer, an automobile, an industrial control system, an aircraft, and others.
Utilization of a modification of well established DRAM technology and arrays will serve to afford an inexpensive memory device which can be regarded as disposable if the information is later transferred to another medium, for instance CDROM's. The high density of DRAM array structures will afford the storage of a large volume of digital data or images at a very low cost per bit. There are many applications where the data need only be written a limited number of times, the low cost of these memories will make it more efficient to just utilize a new memory array, and dispose of the old memory array, rather than trying to erase and reuse these arrays as is done with current flash memories. The novel multistate cells can be used in a DRAM like array. Two transistors can occupy an area of 4 F squared (F=the minimum lithographic feature size) when viewed from above, or each memory cell consisting of one transistor utilizing an area of 2 F squared. Each such transistor can now, however, store many bits so the data storage density is much higher than one bit for each 1 F squared unit area. Using a reference or dummy cell for each memory transistor where the reference transistor is in close proximity, e.g., the embodiment shown in
It is to be understood that the above description is intended to be illustrative, and not restrictive. Many other embodiments will be apparent to those of skill in the art upon reviewing the above description. The scope of the invention should, therefore, be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled.
|Patente citada||Fecha de presentación||Fecha de publicación||Solicitante||Título|
|US4184207||12 Jul 1978||15 Ene 1980||Texas Instruments Incorporated||High density floating gate electrically programmable ROM|
|US4420504||17 May 1982||13 Dic 1983||Raytheon Company||Programmable read only memory|
|US4755864||14 Sep 1987||5 Jul 1988||Kabushiki Kaisha Toshiba||Semiconductor read only memory device with selectively present mask layer|
|US4881114||16 May 1986||14 Nov 1989||Actel Corporation||Selectively formable vertical diode circuit element|
|US5241496||19 Ago 1991||31 Ago 1993||Micron Technology, Inc.||Array of read-only memory cells, eacch of which has a one-time, voltage-programmable antifuse element constructed within a trench shared by a pair of cells|
|US5330930||31 Dic 1992||19 Jul 1994||Chartered Semiconductor Manufacturing Pte Ltd.||Formation of vertical polysilicon resistor having a nitride sidewall for small static RAM cell|
|US5341328||15 Jun 1992||23 Ago 1994||Energy Conversion Devices, Inc.||Electrically erasable memory elements having reduced switching current requirements and increased write/erase cycle life|
|US5378647||25 Oct 1993||3 Ene 1995||United Microelectronics Corporation||Method of making a bottom gate mask ROM device|
|US5379253||1 Jun 1992||3 Ene 1995||National Semiconductor Corporation||High density EEPROM cell array with novel programming scheme and method of manufacture|
|US5397725||28 Oct 1993||14 Mar 1995||National Semiconductor Corporation||Method of controlling oxide thinning in an EPROM or flash memory array|
|US5406509||12 Abr 1993||11 Abr 1995||Energy Conversion Devices, Inc.||Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom|
|US5467305||12 Mar 1992||14 Nov 1995||International Business Machines Corporation||Three-dimensional direct-write EEPROM arrays and fabrication methods|
|US5576236||28 Jun 1995||19 Nov 1996||United Microelectronics Corporation||Process for coding and code marking read-only memory|
|US5610099||28 Jun 1994||11 Mar 1997||Ramtron International Corporation||Process for fabricating transistors using composite nitride structure|
|US5617351||5 Jun 1995||1 Abr 1997||International Business Machines Corporation||Three-dimensional direct-write EEPROM arrays and fabrication methods|
|US5768192||23 Jul 1996||16 Jun 1998||Saifun Semiconductors, Ltd.||Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping|
|US5792697||23 Abr 1997||11 Ago 1998||United Microelectronics Corporation||Method for fabricating a multi-stage ROM|
|US5858841||25 Nov 1997||12 Ene 1999||United Microelectronics Corporation||ROM device having memory units arranged in three dimensions, and a method of making the same|
|US5892710||13 Ago 1997||6 Abr 1999||Intel Corporation||Method and circuitry for storing discrete amounts of charge in a single memory element|
|US5911106||29 Ago 1997||8 Jun 1999||Nec Corporation||Semiconductor memory device and fabrication thereof|
|US5936274||8 Jul 1997||10 Ago 1999||Micron Technology, Inc.||High density flash memory|
|US5946558||30 May 1997||31 Ago 1999||United Microelectronics Corp.||Method of making ROM components|
|US5966603||11 Jun 1997||12 Oct 1999||Saifun Semiconductors Ltd.||NROM fabrication method with a periphery portion|
|US5973356||8 Jul 1997||26 Oct 1999||Micron Technology, Inc.||Ultra high density flash memory|
|US5990509||22 Ene 1997||23 Nov 1999||International Business Machines Corporation||2F-square memory cell for gigabit memory applications|
|US5991225||27 Feb 1998||23 Nov 1999||Micron Technology, Inc.||Programmable memory address decode array with vertical transistors|
|US5994745||24 Abr 1995||30 Nov 1999||United Microelectronics Corp.||ROM device having shaped gate electrodes and corresponding code implants|
|US6011725||4 Feb 1999||4 Ene 2000||Saifun Semiconductors, Ltd.||Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping|
|US6028342||11 Feb 1998||22 Feb 2000||United Microelectronics Corp.||ROM diode and a method of making the same|
|US6030871||5 May 1998||29 Feb 2000||Saifun Semiconductors Ltd.||Process for producing two bit ROM cell utilizing angled implant|
|US6044022||26 Feb 1999||28 Mar 2000||Tower Semiconductor Ltd.||Programmable configuration for EEPROMS including 2-bit non-volatile memory cell arrays|
|US6072209||8 Jul 1997||6 Jun 2000||Micro Technology, Inc.||Four F2 folded bit line DRAM cell structure having buried bit and word lines|
|US6081456||4 Feb 1999||27 Jun 2000||Tower Semiconductor Ltd.||Bit line control circuit for a memory array using 2-bit non-volatile memory cells|
|US6093606||5 Mar 1998||25 Jul 2000||Taiwan Semiconductor Manufacturing Company||Method of manufacture of vertical stacked gate flash memory device|
|US6108240||4 Feb 1999||22 Ago 2000||Tower Semiconductor Ltd.||Implementation of EEPROM using intermediate gate voltage to avoid disturb conditions|
|US6114725||9 Jun 1998||5 Sep 2000||International Business Machines Corporation||Structure for folded architecture pillar memory cell|
|US6124729||27 Feb 1998||26 Sep 2000||Micron Technology, Inc.||Field programmable logic arrays with vertical transistors|
|US6133102||19 Jun 1998||17 Oct 2000||Wu; Shye-Lin||Method of fabricating double poly-gate high density multi-state flat mask ROM cells|
|US6134156||4 Feb 1999||17 Oct 2000||Saifun Semiconductors Ltd.||Method for initiating a retrieval procedure in virtual ground arrays|
|US6144093||27 Abr 1998||7 Nov 2000||International Rectifier Corp.||Commonly housed diverse semiconductor die with reduced inductance|
|US6147904||4 Feb 1999||14 Nov 2000||Tower Semiconductor Ltd.||Redundancy method and structure for 2-bit non-volatile memory cells|
|US6150687||8 Jul 1997||21 Nov 2000||Micron Technology, Inc.||Memory cell having a vertical transistor with buried source/drain and dual gates|
|US6157570||4 Feb 1999||5 Dic 2000||Tower Semiconductor Ltd.||Program/erase endurance of EEPROM memory cells|
|US6172396||23 Abr 1998||9 Ene 2001||Worldwide Semiconductor Manufacturing Corp.||ROM structure and method of manufacture|
|US6174758||3 Mar 1999||16 Ene 2001||Tower Semiconductor Ltd.||Semiconductor chip having fieldless array with salicide gates and methods for making same|
|US6175523||25 Oct 1999||16 Ene 2001||Advanced Micro Devices, Inc||Precharging mechanism and method for NAND-based flash memory devices|
|US6181597||4 Feb 1999||30 Ene 2001||Tower Semiconductor Ltd.||EEPROM array using 2-bit non-volatile memory cells with serial read operations|
|US6184089||27 Ene 1999||6 Feb 2001||United Microelectronics Corp.||Method of fabricating one-time programmable read only memory|
|US6201282||23 Dic 1999||13 Mar 2001||Saifun Semiconductors Ltd.||Two bit ROM cell and process for producing same|
|US6201737||26 Abr 2000||13 Mar 2001||Advanced Micro Devices, Inc.||Apparatus and method to characterize the threshold distribution in an NROM virtual ground array|
|US6204529||27 Ago 1999||20 Mar 2001||Hsing Lan Lung||8 bit per cell non-volatile semiconductor memory structure utilizing trench technology and dielectric floating gate|
|US6207504||30 Dic 1998||27 Mar 2001||United Semiconductor Corp.||Method of fabricating flash erasable programmable read only memory|
|US6208557||21 May 1999||27 Mar 2001||National Semiconductor Corporation||EPROM and flash memory cells with source-side injection and a gate dielectric that traps hot electrons during programming|
|US6215702||16 Feb 2000||10 Abr 2001||Advanced Micro Devices, Inc.||Method of maintaining constant erasing speeds for non-volatile memory cells|
|US6218695||28 Jun 1999||17 Abr 2001||Tower Semiconductor Ltd.||Area efficient column select circuitry for 2-bit non-volatile memory cells|
|US6222768||26 Abr 2000||24 Abr 2001||Advanced Micro Devices, Inc.||Auto adjusting window placement scheme for an NROM virtual ground array|
|US6240020||25 Oct 1999||29 May 2001||Advanced Micro Devices||Method of bitline shielding in conjunction with a precharging scheme for nand-based flash memory devices|
|US6243300||16 Feb 2000||5 Jun 2001||Advanced Micro Devices, Inc.||Substrate hole injection for neutralizing spillover charge generated during programming of a non-volatile memory cell|
|US6251731||13 Jul 1999||26 Jun 2001||Acer Semiconductor Manufacturing, Inc.||Method for fabricating high-density and high-speed nand-type mask roms|
|US6255166||28 Dic 1999||3 Jul 2001||Aalo Lsi Design & Device Technology, Inc.||Nonvolatile memory cell, method of programming the same and nonvolatile memory array|
|US6256231||4 Feb 1999||3 Jul 2001||Tower Semiconductor Ltd.||EEPROM array using 2-bit non-volatile memory cells and method of implementing same|
|US6266281||16 Feb 2000||24 Jul 2001||Advanced Micro Devices, Inc.||Method of erasing non-volatile memory cells|
|US6269023||23 Oct 2000||31 Jul 2001||Advanced Micro Devices, Inc.||Method of programming a non-volatile memory cell using a current limiter|
|US6272043||23 Jun 2000||7 Ago 2001||Advanced Micro Devices, Inc.||Apparatus and method of direct current sensing from source side in a virtual ground array|
|US6275414||22 Nov 2000||14 Ago 2001||Advanced Micro Devices, Inc.||Uniform bitline strapping of a non-volatile memory cell|
|US6282118||6 Oct 2000||28 Ago 2001||Macronix International Co. Ltd.||Nonvolatile semiconductor memory device|
|US6291854||30 Dic 1999||18 Sep 2001||United Microelectronics Corp.||Electrically erasable and programmable read only memory device and manufacturing therefor|
|US6297096||30 Jul 1999||2 Oct 2001||Saifun Semiconductors Ltd.||NROM fabrication method|
|US6303436||21 Sep 1999||16 Oct 2001||Mosel Vitelic, Inc.||Method for fabricating a type of trench mask ROM cell|
|US6303479||16 Dic 1999||16 Oct 2001||Spinnaker Semiconductor, Inc.||Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts|
|US6320223||17 Mar 2000||20 Nov 2001||U.S. Philips Corporation||Electronic device comprising a trench gate field effect device|
|US6327174||24 Feb 2000||4 Dic 2001||United Microelectronics Corp.||Method of manufacturing mask read-only memory cell|
|US6331467||29 Mar 2000||18 Dic 2001||U.S. Philips Corporation||Method of manufacturing a trench gate field effect semiconductor device|
|US6348711||6 Oct 1999||19 Feb 2002||Saifun Semiconductors Ltd.||NROM cell with self-aligned programming and erasure areas|
|US6392930||9 Ene 2001||21 May 2002||United Microelectronics Corp.||Method of manufacturing mask read-only memory cell|
|US6417053||20 Nov 2001||9 Jul 2002||Macronix International Co., Ltd.||Fabrication method for a silicon nitride read-only memory|
|US6421275||22 Ene 2002||16 Jul 2002||Macronix International Co. Ltd.||Method for adjusting a reference current of a flash nitride read only memory (NROM) and device thereof|
|US6429063||6 Mar 2000||6 Ago 2002||Saifun Semiconductors Ltd.||NROM cell with generally decoupled primary and secondary injection|
|US6432778||7 Ago 2001||13 Ago 2002||Macronix International Co. Ltd.||Method of forming a system on chip (SOC) with nitride read only memory (NROM)|
|US6448607 *||3 Dic 2001||10 Sep 2002||Ememory Technology Inc.||Nonvolatile memory having embedded word lines|
|US6461949||29 Mar 2001||8 Oct 2002||Macronix International Co. Ltd.||Method for fabricating a nitride read-only-memory (NROM)|
|US6468864||10 Ago 2001||22 Oct 2002||Macronix International Co., Ltd.||Method of fabricating silicon nitride read only memory|
|US6469342||20 Nov 2001||22 Oct 2002||Macronix International Co., Ltd.||Silicon nitride read only memory that prevents antenna effect|
|US6477084||7 Feb 2001||5 Nov 2002||Saifun Semiconductors Ltd.||NROM cell with improved programming, erasing and cycling|
|US6486028||20 Nov 2001||26 Nov 2002||Macronix International Co., Ltd.||Method of fabricating a nitride read-only-memory cell vertical structure|
|US6487050||28 Dic 1999||26 Nov 2002||Seagate Technology Llc||Disc drive with wear-resistant ramp coating of carbon nitride or metal nitride|
|US6490196 *||4 Jun 2002||3 Dic 2002||Ememory Technology Inc.||Method for operating a nonvolatile memory having embedded word lines|
|US6498377||21 Mar 2002||24 Dic 2002||Macronix International, Co., Ltd.||SONOS component having high dielectric property|
|US6514831||14 Nov 2001||4 Feb 2003||Macronix International Co., Ltd.||Nitride read only memory cell|
|US6531887||1 Jun 2001||11 Mar 2003||Macronix International Co., Ltd.||One cell programmable switch using non-volatile cell|
|US6541815||11 Oct 2001||1 Abr 2003||International Business Machines Corporation||High-density dual-cell flash memory structure|
|US6545309||22 Mar 2002||8 Abr 2003||Macronix International Co., Ltd.||Nitride read-only memory with protective diode and operating method thereof|
|US6552387||14 Dic 1998||22 Abr 2003||Saifun Semiconductors Ltd.||Non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping|
|US6559013||10 Jul 2002||6 May 2003||Macronix International Co., Ltd.||Method for fabricating mask ROM device|
|US6576511||2 May 2001||10 Jun 2003||Macronix International Co., Ltd.||Method for forming nitride read only memory|
|US6580135||22 Mar 2002||17 Jun 2003||Macronix International Co., Ltd.||Silicon nitride read only memory structure and method of programming and erasure|
|US6580630||7 Jun 2002||17 Jun 2003||Macronix International Co., Ltd.||Initialization method of P-type silicon nitride read only memory|
|US6602805||14 Dic 2000||5 Ago 2003||Macronix International Co., Ltd.||Method for forming gate dielectric layer in NROM|
|US6607957||31 Jul 2002||19 Ago 2003||Macronix International Co., Ltd.||Method for fabricating nitride read only memory|
|US6610586||4 Sep 2002||26 Ago 2003||Macronix International Co., Ltd.||Method for fabricating nitride read-only memory|
|US6613632||28 May 2002||2 Sep 2003||Macronix International Co., Ltd.||Fabrication method for a silicon nitride read-only memory|
|US6768166 *||25 Jun 2002||27 Jul 2004||Infineon Technologies Ag||Vertical transistor, memory arrangement and method for fabricating a vertical transistor|
|US6885060 *||19 Mar 2002||26 Abr 2005||Sony Corporation||Non-volatile semiconductor memory device and process for fabricating the same|
|US7050330 *||10 May 2004||23 May 2006||Micron Technology, Inc.||Multi-state NROM device|
|US7067875 *||24 Abr 2002||27 Jun 2006||Renesas Technology Corp.||Semiconductor integrated circuit device and its manufacturing method|
|US7075148 *||5 Mar 2005||11 Jul 2006||Infineon Technologies Ag||Semiconductor memory with vertical memory transistors in a cell array arrangement with 1-2F2 cells|
|US20020100932 *||14 Feb 2002||1 Ago 2002||Fairchild Semiconductor Corporation||Method of forming a trench transistor having a superior gate dielectric|
|US20030235076 *||21 Jun 2002||25 Dic 2003||Micron Technology, Inc.||Multistate NROM having a storage density much greater than 1 Bit per 1F2|
|1||A. Nughin, "n-Channel 256kb and 1Mb EEPROMs," ISSCC91, Session 134, Special Session on Technology in the USSR, Paper 13.4, 1991 IEEE InternationalSolid State Circuits Conference, Digest of Technical Papers, pp. 228-229, 319.|
|2||A. Shappir, et al., "Subthreshold slope degradation model for localized-charge-trapping based non-volatile memory devices," Solid State Electronics, 47 (2003) pp. 937-941, Copyright 2003 Elsevier Science Ltd.|
|3||A. Shappir, et al., "Subtreshold degradation model for localized-charge-trapping based non-volatile memory devices," Solid-State Electronics 47 (2003), pp. 937-941. Copyright 2003 Elsevier Science Ltd.|
|4||B. Dipert and L. Hebert, "Flash Memory goes Mainstream," IEEE Spectrum, No. 10, pp. 48-52, (Oct. 1993).|
|5||B. Eitan et al., "Can NROM, a 2-bit, Trapping Storage NVM Cell, Give a Real Challenge to Floating Gate Cells?" Int. Conf. on Solid State Devices and Materials, Tokyo, (1999), pp. 1-3, Copyright 1999 Saifun Semiconductors Ltd.|
|6||B. Eitan et al., "Characterization of Channel Hot Electron Injection by the Subthreshold Slope of NROM(TM) Device," IEEE Electron Device Lett., vol. 22, No. 11, (Nov. 2001) pp. 556-558, Copyright 2001 IEEE.|
|7||B. Eitan et al., "Electrons Retention Model for Localized Charge in Oxide-Nitride-Oxide (ONO) Dielectric," IEEE Device Lett., vol. 23, No. 9, (Sep. 2002), pp. 556-558. Copyright 2002 IEEE.|
|8||B. Eitan et al., "Impact of Programming Charge Distribution on Threshold Voltage and Subthreshold Slope of NROM Memory cells," IEEE Transactions on Electron Devices, vol. 49, No. 11, (Nov. 2002), pp. 1939-1946, Copyright 2002 IEEE.|
|9||B. Eitan et al., "NROM: A Novel Localized Trapping, 2-Bit Nonvolatile Memory Cell," IEEE Electron Device Lett, vol. 21, No. 11, (Nov. 2000), pp. 543-545, Copyright 2000 IEEE.|
|10||B. Eitan et al., "Spatial characterization of Channel hot electron injection utilizing subthreshold slope of the localized charge storage NROM(TM) memory device," Non-Volatile Semiconductor Memory Workshop (NVSMW), Monterey, CA, (Aug. 2001), pp. 1-2.|
|11||B. Eitan et al., "Spatial Characterization of Hot Carriers Injected into the Gate Dielectric Stack of a MOSFET Based on Non-Volatile Memory Device," date unknown, pp. 58-60.|
|12||C. C. Yeh, et al., "A Modified Read Scheme to Improve Read Disturb and Second Bit Effect in a Scaled MXVAND Flash Memory Cell," Macronix International Co., Ltd. and Department of Electronics Engineering, National Chiao-Tung University, Date Unknown.|
|13||C. Pan, K. Wu, P. Freiberger, A. Chatterjee, G. Sery, "A Scaling Methodology for Oxide-Nitride-Oxide Interpoly Dielectric for EPROM Applications," IEEE Transactions on Electron Devices, vol. 37, No. 6, (Jun. 1990), pp. 1439-1443, Copyright 1990 IEEE.|
|14||Certified Translation, "Flash cell that seeks to replace current technology introduced enabling both low cost and high performance" Nikkei Microdevices, Nov. 1999, pp. 147-148.|
|15||E. J. Prinz, et al., "An Embedded 90nm SONOS Flash EEPROM Utilizing Hot Electron Injection Programming and 2-Sided Hot Hole Injection Erase," Motorola Embedded Memory Center, Date Unknown.|
|16||E. Lusky, et al., "Electron Discharge Model of Locally-Trapped Charge in Oxide-Nitride-Oxide (ONO) Gates for NROM(TM) Non-Volatile Semiconductor Memory Devices," Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials, Tokyo, 2001 pp. 534-535.|
|17||E. Lusky, et al., "Investigation of Spatial Distribution of CHE Injection Utilizing the Subthreshold Slope and the Gate Induced Drain Leakage (GIDL) Characteristics of the NROM(TM) Device," Saifun Semiconductors, Ltd. and Tel Aviv University, Dept of Physical Electronics, pp. 1-2., Date Unknown.|
|18||E. Maayan et al., "A 512Mb NROM Flash Data Storage Memory with 8MB/s Data Range," Dig. IEEE Int. Solid-State Circuits Conf., San Francisco, (Feb. 2000), pp. 1-8, Copyright Saifun Semiconductors Ltd. 2002.|
|19||E. Maayan et al., "A 512Mb NROM Flash Data Storage Memory with 8MB/s Data Range," ISSCC 2002 Visuals Supplement, Session 6, SRAM and Non-Volatile Memories, 6.1 and 6.2, pp. 76-77, 407-408. Copyright 1990 IEEE.|
|20||F. Vollebregt, R. Cuppens, F. Druyts, G. Lemmen, F. Verberne, J. Solo, "A New E(E)PROM Technology With A TiSi2 Control Gate," IEEE 1989, pp. 25.8.1-25.8.4, Copyright 1989 IEEE.|
|21||G. Xue, et al., "Low Voltage Low Cost Nitride Embedded Flash Memory Cell" IMEC., Date Unknown.|
|22||H. Tomiye, et al., "A novel 2-bit/cell MONOS memory device with a wrapped-control-gate structure that applies source-side hot-electron injection," 2002 Symposium on VLSI Technology Digest of Technical Papers, Copyright 2002 IEEE.|
|23||I. Bloom, et al., "NROM(TM) -a new technology for non-volatile memory products" Solid-State Electronics 46 (2002), pp. 1757-1763. Copyright 2002 Elsevier Science Ltd.|
|24||I. Bloom, et al., "NROM(TM) NVM technology for Multi-Media Applications," Saifun Semiconductors, Ltd. Ingentix, Ltfd. and Infineon Technologies, Date Unknown.|
|25||I. Fujiwara, et al., "High speed program/erase sub 100 nm MONOS memory cell," Sony Corporation, Date Unknown.|
|26||J. Bu and M. White, "Electrical characterization on ONO triple dielectric in SONOS nonvolatile memory devices," Solid-State Electronics 45 (2001) pp. 47-51. Copyright 2001 Elsevier Science Ltd.|
|27||J. Bu, et al., "Retention Reliability Enhanced SONOS NVSM with Scaled Programming Voltage," Microelectronics Lab., Date Unknown.|
|28||J. H. Kim, et al., "Highly Manufacturable SONOS Non-Volatile Memory for the Embedded SoC Solution," 2003 Symposium on VLSI Technology Digest of Technical Papers, pp. 31-32.|
|29||J. Willer, et al., "UMEM: A U-shape Non-Volatile-Memory Cell," Ingentix GmbH &Co. KG., Infineon Technologies and Saifun Semiconductors, Date Unknown.|
|30||L. Breuil, et al., "A new 2 isolated-bits/cell flash memory device with self aligned split gate structure using ONO stacks for charge storage," IMEC, Date Unknown.|
|31||L. Forbes, E. Sun, R. Alders and J. Moll, DialogTech, "Field induced re-emission of electons trapped in SiO2," IEEE Trans. Electron Device, vol. ED-26, No. 11, pp. 1816-1818 (Nov. 1979), Dialog(R) File No. 2 Accession No. 1543221.|
|32||M. Janai, "Data Retention, Endurance and Acceleration Factors of NROM Devices," IEEE 41st Annual International Reliability Physics Symposium, Dallas, TX (2003), pp. 502-505, Copyright 1989 IEEE.|
|33||M. K. Cho and D. M. Kim, "High Performance SONOS Memory Cells Free of Drain Turn-On and Over-Erase: Compatibilty Issue with Current Flash Technology," IEEE Electron Device Letters, vol. 21, No. 8, Aug. 2000, pp. 399-401, Copyright 2000 IEEE.|
|34||Milnes, D.Sc., A.G., "Semiconductor Devices and Integrated Electronics," (C) 1980 IEEE by A.G. Milnes, 3 pp.|
|35||P. Manos and C. Hart, "A Self-Aligned EPROM Structure with Superior Data Retention," IEEE Electron Device Letters, vol. 11, No. 7, (Jul. 1990) pp. 309-311, Copyright 1990 IEEE.|
|36||R. Neale, "AMD's MirrorBit-a big step in Flash progress," Electronic Engineering Design, V. 74, No. 906, pp. 47-50.|
|37||S. Kang, et al., "A Study of SONOS Nonvolatile Memory Cell Controlled Structurally by Localizing Charge-Trapping Layer," Samsung Electrons Co., Ltd., Date Unknown.|
|38||S. Minami and Y. Kamigaki, "A Novel MONOS Nonvolatile Memory Device Ensuring 10-Year Data Retention after 107 Erase/Write Cycles," IEEE Transactions on Electron Devices, vol. 40, No. 11 (Nov. 1993) pp. 2011-2017, Copyright 1998 IEEE.|
|39||S. Ogura, et al. "Twin MONOS Cell with Dual Control Gates," Halo LSI and New Halo, pp. 187-187.3, Date Unknown.|
|40||S.A. Abbas and R.C. Dockerty, Dialog-Tech, "N-channel IGFET design limitations dude to hot electron trapping," IEEE Int. Electron Devices Mtg., Washington D.C., (Dec. 1975), pp. 35-38, Dialog(R) File No. 2 Accession No. 956925.|
|41||Saifun Semiconductors, LTD. PowerPoint Presentation, Date Unknown.|
|42||Standards Committee of the IEEE Electron Devices Society, "IEEE Standard Definitions and Characterization of Floating Gate Semiconductor Arrays," (C) 1999 IEEE, cover page and pp. 46-52.|
|43||T. Huang, F. Jong, T. Chao, H. Lin, L. Leu, K. Young, C. Lin, K. Chiu, "Improving Radiation Hardness of EEPROM/Flash Cell By N20 Annealing," IEEE Electron Device Letters, vol. 19, No. 7 (Jul. 1998), pp. 256-258, Copyright 1998 IEEE.|
|44||T. Nozaki, T. Tanaka, Y. Kijiya, E. Kinoshita, T. Tsuchiya, Y. Hayashi, "A 1-Mb EEPROM with MONOS Memory Cell for Semiconductor Disk Application," IEEE Journal of Solid-State Circuits, vol. 26, No. 4 (Apr. 1991), pp. 497-501, Copyright 1991 IEEE.|
|45||T. Saito, et al. "Hot Hole Erase Characteristics and Reliability in Twin MONOS Device" Halo LSI, Date Unknown.|
|46||T. Saito, et al., "CHE Program Behavior in MONOS Device," Halo LSI., Date Unknown.|
|47||T. Schulz, et al., "Short-Channel Vertical sidewall MOSFETs," (C) 2001 IEEE, pp. 1783-1788.|
|48||T. Sugizaki, et al. "New 2-bit/Tr MONOS Type Flash Memory using Al2O'as Charge Trapping Layer," Fujitsu Laboratories Ltd, Date Unknown.|
|49||T. Y. Chan, K.K. Young and C. Hu, "A True Single-Transistor Oxide-Nitride-Oxide EEPROM Device," IEEE Electron Device Letters, vol. EDL-8, No. 3, Mar. 1987, pp. 93-95., Copyright 1987 IEEE.|
|50||Versari, et al., "Optimized programming of Multilevel Flash EEPROMs," (C) 2001 IEEE, pp. 1641-1646.|
|51||Von Houdt, et al., "Analysis of the Enhanced Hot-Electron Injecion in Split-Gate Transistors Useful for EEPROM Applications," (C) 1992 IEEE, pp. 1150-1156.|
|52||W. J. Tsai, et al. "Cause of Data Retention Loss in a Nitride-Based Localized Trapping Storage Flash Memory Cell," IEEE 40th Annual International Reliability Physics Symposium, Dallas, (2002), pp. 34-38. Copyright 2002 IEEE.|
|53||W. Owen and E. Tchon, "E2PROM Product Issues and Technology Trends," IEEE 1989, pp. 17-19, Copyright 1989 IEEE.|
|54||W.J. Tsai, et al. "Data Retention Behavior of a SONOS Type Two-Bit Storage Flash Memory Cell," IEDM 01-0179-01-722, Copyright 2001 IEEE.|
|55||Y, Kamigaki and S. Minami, "MNOS Nonvolatile Semiconductor Memory Technology: Present and Future," IEICE Trans. Electron, vol. E84-C, No. 6, pp. 713-723 (Jun. 2001).|
|56||Y. Hayashi, et al., "Twin MONOS Cell with Dual Control Gates," 2000 Symposium on VLSI Technology Digest of Technical Papers, 2000 IEEE, pp. 122-123.|
|57||Y. K. Lee, et al., "30-nm Twin Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) Memory (TSM) with High Erase Speed and Reliability," School of Electrical Engineering, Seoul National University, C&M, System LSI, ATD, PD, Samsung Electronics Co., Date Unknown.|
|58||Y. K. Lee, et al., "Multi-Level Vertical Channel SONOS Nonvolatile Memory on SOI," 2002 Symposium on VLSI Technology Digest of Technical Papers, Copyright 2002 IEEE.|
|59||Y. Roizin, et al. "Novel Techniques for data retention and Ledd measurements in two bit MicroFlash (R) Memory Cells," Characterization and Metrology for ULSI Technology: 200 International Conf., pp. 181-185, Copyright 2001 American Institute of Physics, 1-56396-967-X/01.|
|60||Y. Roizin, et al., "Activation Energy of Traps in the ONO Stack microFLASH(R) Memory Cells," Tower Semiconductor, Ltd., Date Unknown.|
|61||Y. Roizin, et al., "Dummy' Gox for Optimization of microFLASH(R) Technology," Tower Semiconductor, Ltd., Date Unknown.|
|62||Y. Roizin, et al., "In-Process Charging in microFLASH (R) Memory Cells," Tower Semiconductor, Ltd., Date Unknown.|
|63||Y. Roizin, et al., "Retention Characteristics of microFLASH(R) Memory (Activation Energy of Traps in the ONO Stack)," Tower Semiconductor, Ltd., Date Unknown.|
|Patente citante||Fecha de presentación||Fecha de publicación||Solicitante||Título|
|US8357965||22 Ene 2013||Spansion Llc||Semiconductor device having multiple storage regions|
|US20090020799 *||28 Dic 2007||22 Ene 2009||Hiroyuki Nansei||Semiconductor device and method of manufacturing the same|
|US20120019284 *||26 Jul 2010||26 Ene 2012||Infineon Technologies Austria Ag||Normally-Off Field Effect Transistor, a Manufacturing Method Therefor and a Method for Programming a Power Field Effect Transistor|
|Clasificación de EE.UU.||257/310, 257/324, 365/185.24, 365/185.03, 257/E21.679|
|Clasificación internacional||H01L29/792, H01L21/8247, H01L29/788, G11C11/56, G11C16/04, H01L27/108, H01L27/115, H01L21/8246|
|Clasificación cooperativa||G11C16/0466, H01L27/11582, H01L29/7889, H01L29/7923, G11C11/5692, H01L27/11556, H01L29/7926, G11C16/0475|
|Clasificación europea||G11C16/04M, H01L29/792B, H01L29/792V, H01L29/788V, H01L27/115F10C2, H01L27/115G10C2, G11C16/04M2, G11C11/56R|
|28 Jul 2009||CC||Certificate of correction|
|28 Sep 2012||FPAY||Fee payment|
Year of fee payment: 4
|12 May 2016||AS||Assignment|
Owner name: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGEN
Free format text: SECURITY INTEREST;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:038669/0001
Effective date: 20160426
|2 Jun 2016||AS||Assignment|
Owner name: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL
Free format text: PATENT SECURITY AGREEMENT;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:038954/0001
Effective date: 20160426