US7569153B2 - Fabrication method of liquid crystal display device - Google Patents
Fabrication method of liquid crystal display device Download PDFInfo
- Publication number
- US7569153B2 US7569153B2 US10/422,739 US42273903A US7569153B2 US 7569153 B2 US7569153 B2 US 7569153B2 US 42273903 A US42273903 A US 42273903A US 7569153 B2 US7569153 B2 US 7569153B2
- Authority
- US
- United States
- Prior art keywords
- resist pattern
- resist
- printing roll
- layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related, expires
Links
- 238000000034 method Methods 0.000 title claims abstract description 65
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title description 12
- 238000007639 printing Methods 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 238000005530 etching Methods 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims description 20
- 238000002161 passivation Methods 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 25
- 238000000206 photolithography Methods 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000007645 offset printing Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910004205 SiNX Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- -1 acryl Chemical group 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000007647 flexography Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000813 microcontact printing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
- G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (1)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR28744/2002 | 2002-05-23 | ||
KR10-2002-0028744A KR100532085B1 (en) | 2002-05-23 | 2002-05-23 | Printing device of photo resist and fabricating method of tft-lcd therewith |
KR1020020085626A KR20040059093A (en) | 2002-12-27 | 2002-12-27 | Fabrication method of liquid crystal display device |
KR85626/2002 | 2002-12-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
US20030219920A1 US20030219920A1 (en) | 2003-11-27 |
US7569153B2 true US7569153B2 (en) | 2009-08-04 |
Family
ID=29552423
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/422,739 Expired - Fee Related US7569153B2 (en) | 2002-05-23 | 2003-04-25 | Fabrication method of liquid crystal display device |
Country Status (3)
Country | Link |
---|---|
US (1) | US7569153B2 (en) |
JP (1) | JP3830916B2 (en) |
CN (1) | CN100492171C (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090001617A1 (en) * | 2007-06-27 | 2009-01-01 | Lg Display Co., Ltd. | Alignment key, method for fabricating the alignment key, and method for fabricating thin film transistor substrate using the alignment key |
US20090170228A1 (en) * | 2004-12-17 | 2009-07-02 | Lg Display Co., Ltd. | Method of forming pattern having step difference and method of making thin film transistor and liquid crystal display using the same |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100652214B1 (en) * | 2003-04-03 | 2006-11-30 | 엘지.필립스 엘시디 주식회사 | Fabrication method of liquid crystal display device |
TWI221341B (en) * | 2003-09-18 | 2004-09-21 | Ind Tech Res Inst | Method and material for forming active layer of thin film transistor |
KR101086477B1 (en) | 2004-05-27 | 2011-11-25 | 엘지디스플레이 주식회사 | Method For Fabricating Thin Film Transistor Substrate for Display Device |
CN100368910C (en) * | 2004-12-28 | 2008-02-13 | 中华映管股份有限公司 | Method for manufacturing pixel structure |
KR101107687B1 (en) * | 2004-12-30 | 2012-01-25 | 엘지디스플레이 주식회사 | Printing plate and Patterning Method of a line for Liquid Crystal Display Device using the same |
US7049163B1 (en) * | 2005-03-16 | 2006-05-23 | Chunghwa Picture Tubes, Ltd. | Manufacture method of pixel structure |
KR101137865B1 (en) * | 2005-06-21 | 2012-04-20 | 엘지디스플레이 주식회사 | Fabricating method for thin flim transister substrate and thin flim transister substrate using the same |
WO2007117672A2 (en) | 2006-04-07 | 2007-10-18 | Qd Vision, Inc. | Methods of depositing nanomaterial & methods of making a device |
GB2437112B (en) * | 2006-04-11 | 2011-04-13 | Nicholas Jim Stone | A method of making an electrical device |
KR101308431B1 (en) * | 2006-04-26 | 2013-09-30 | 엘지디스플레이 주식회사 | Resist for Printing and Patterning Method using the same |
WO2008111947A1 (en) | 2006-06-24 | 2008-09-18 | Qd Vision, Inc. | Methods and articles including nanomaterial |
KR100983716B1 (en) * | 2006-06-30 | 2010-09-24 | 엘지디스플레이 주식회사 | Liquid crystal display device and method of fabricating the same |
JP2008159812A (en) * | 2006-12-22 | 2008-07-10 | Sharp Corp | Device for forming semiconductor layer and method for forming semiconductor layer |
KR101357042B1 (en) * | 2007-03-12 | 2014-02-03 | 엘지디스플레이 주식회사 | Fabrication process of liquid crystal display |
KR101434451B1 (en) * | 2007-03-13 | 2014-08-27 | 엘지디스플레이 주식회사 | Methode for fabricating an array substrate for liquid crystal display device |
JP2012128137A (en) * | 2010-12-15 | 2012-07-05 | Seiko Epson Corp | Reflection type screen and method for manufacturing reflection type screen |
CN102651331A (en) * | 2011-06-14 | 2012-08-29 | 京东方科技集团股份有限公司 | Substrate tray and manufacturing method of flexible electronic device |
KR101726641B1 (en) * | 2011-08-03 | 2017-04-26 | 엘지디스플레이 주식회사 | Method of fabricating cliche |
CN108198752A (en) * | 2017-12-29 | 2018-06-22 | 长沙新材料产业研究院有限公司 | A kind of method for preparing pattern on substrate |
US10802325B2 (en) * | 2018-11-05 | 2020-10-13 | Himax Display, Inc. | Display panel |
Citations (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3701317A (en) * | 1967-09-19 | 1972-10-31 | Hiroshi Miyamoto | Method for printing electrical circuits on substrates |
JPS55149919A (en) | 1979-05-11 | 1980-11-21 | Hitachi Ltd | Electrode substrate |
US4294650A (en) | 1977-02-18 | 1981-10-13 | Firma Standex International Gmbh | Method of and apparatus for producing embossing tools |
JPS6333730A (en) | 1986-07-29 | 1988-02-13 | Matsushita Electric Ind Co Ltd | Color filter for liquid crystal display body |
CN87105395A (en) | 1986-08-06 | 1988-05-04 | 施乐公司 | Hot-melt fixing system with fiber winding thin layer |
JPS63205608A (en) | 1987-02-23 | 1988-08-25 | Matsushita Electric Ind Co Ltd | Production of color filter for liquid crystal display body |
CN1042097A (en) | 1988-10-28 | 1990-05-16 | 库夫纳制衣有限公司 | On the gentle riglet of web-like, form tectal square law device of lattice-shaped and product |
JPH0319889A (en) | 1989-06-16 | 1991-01-29 | Dainippon Printing Co Ltd | Printing method of very fine patterns |
EP0471628A1 (en) | 1990-08-09 | 1992-02-19 | Gtc Corporation | Thin film transistor circuit and its manufacturing |
US5127330A (en) | 1989-06-16 | 1992-07-07 | Dai Nippon Insatsu Kabushiki Kaisha | Method including treatment of ink on a plate to cause hardening at other than the ink outer surface before printing |
JPH0511270A (en) | 1991-07-03 | 1993-01-19 | Toshiba Corp | Formation of mask pattern |
US5259926A (en) | 1991-09-24 | 1993-11-09 | Hitachi, Ltd. | Method of manufacturing a thin-film pattern on a substrate |
JPH06106896A (en) | 1992-09-29 | 1994-04-19 | Nissha Printing Co Ltd | Production of transfer material having uneven pattern |
US5425848A (en) * | 1993-03-16 | 1995-06-20 | U.S. Philips Corporation | Method of providing a patterned relief of cured photoresist on a flat substrate surface and device for carrying out such a method |
JPH07240523A (en) | 1994-02-25 | 1995-09-12 | G T C:Kk | Thin film transistor circuit forming method by offset printing |
JPH07239410A (en) | 1994-02-28 | 1995-09-12 | Fujitsu Ltd | Production of color filter |
US5514503A (en) | 1994-10-17 | 1996-05-07 | Corning Incorporated | Apparatus and method for printing a color filter |
US5544582A (en) | 1993-11-03 | 1996-08-13 | Corning Incorporated | Method for printing a color filter |
CN1153710A (en) | 1995-12-29 | 1997-07-09 | 三星电子株式会社 | Heat transfer printer |
US5678483A (en) | 1994-02-16 | 1997-10-21 | Corning Incorporated | Method for printing a black border for a color filter |
US5701815A (en) | 1993-11-03 | 1997-12-30 | Corning Incorporated | Method of printing a color filter |
US5719078A (en) * | 1995-02-11 | 1998-02-17 | Samsung Electronics Co., Ltd. | Method for making a thin film transistor panel used in a liquid crystal display having a completely self-aligned thin film transistor |
JPH1082907A (en) | 1996-03-28 | 1998-03-31 | Corning Inc | Color filter and its production |
US5972545A (en) | 1993-11-03 | 1999-10-26 | Corning Incorporated | Method of printing a color filter |
US6001515A (en) | 1993-11-03 | 1999-12-14 | Corning Incorporated | Method for printing a color filter |
KR20000055524A (en) | 1999-02-08 | 2000-09-05 | 윤종용 | A manuraturing method of thin film transistor for liquid crystal display |
US6255130B1 (en) * | 1998-11-19 | 2001-07-03 | Samsung Electronics Co., Ltd. | Thin film transistor array panel and a method for manufacturing the same |
JP2001216892A (en) | 2000-02-04 | 2001-08-10 | Samsung Yokohama Research Institute Co Ltd | Method of forming electrode for plasma display |
JP2001326448A (en) | 2000-05-16 | 2001-11-22 | Ougi Shokai:Kk | Method and device for forming etching resist pattern when circuit pattern is formed on printed board |
US6356318B1 (en) | 1999-06-28 | 2002-03-12 | Alps Electric Co., Ltd. | Active-matrix liquid crystal display having storage capacitors of area smaller than that of pixel electrodes |
JP2002098995A (en) | 2000-09-25 | 2002-04-05 | Sharp Corp | Method of manufacturing matrix substrate for liquid crystal |
US6635581B2 (en) * | 2001-06-08 | 2003-10-21 | Au Optronics, Corp. | Method for forming a thin-film transistor |
-
2003
- 2003-04-25 US US10/422,739 patent/US7569153B2/en not_active Expired - Fee Related
- 2003-05-22 JP JP2003144292A patent/JP3830916B2/en not_active Expired - Fee Related
- 2003-05-23 CN CNB031410103A patent/CN100492171C/en not_active Expired - Fee Related
Patent Citations (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3701317A (en) * | 1967-09-19 | 1972-10-31 | Hiroshi Miyamoto | Method for printing electrical circuits on substrates |
US4294650A (en) | 1977-02-18 | 1981-10-13 | Firma Standex International Gmbh | Method of and apparatus for producing embossing tools |
JPS55149919A (en) | 1979-05-11 | 1980-11-21 | Hitachi Ltd | Electrode substrate |
JPS6333730A (en) | 1986-07-29 | 1988-02-13 | Matsushita Electric Ind Co Ltd | Color filter for liquid crystal display body |
CN87105395A (en) | 1986-08-06 | 1988-05-04 | 施乐公司 | Hot-melt fixing system with fiber winding thin layer |
US4883941A (en) | 1986-08-06 | 1989-11-28 | Xerox Corporation | Filament wound foil fusing system |
JPS63205608A (en) | 1987-02-23 | 1988-08-25 | Matsushita Electric Ind Co Ltd | Production of color filter for liquid crystal display body |
US5101759A (en) * | 1988-10-28 | 1992-04-07 | Kufner Textilwerke Gmbh | Method and device for forming a grid-like coating on web-like flexible planar members and products thereof |
CN1042097A (en) | 1988-10-28 | 1990-05-16 | 库夫纳制衣有限公司 | On the gentle riglet of web-like, form tectal square law device of lattice-shaped and product |
JPH0319889A (en) | 1989-06-16 | 1991-01-29 | Dainippon Printing Co Ltd | Printing method of very fine patterns |
US5127330A (en) | 1989-06-16 | 1992-07-07 | Dai Nippon Insatsu Kabushiki Kaisha | Method including treatment of ink on a plate to cause hardening at other than the ink outer surface before printing |
JPH0494115A (en) | 1990-08-09 | 1992-03-26 | G T C:Kk | Manufacture of thin film transistor circuit and thin film transistor circuit |
EP0471628A1 (en) | 1990-08-09 | 1992-02-19 | Gtc Corporation | Thin film transistor circuit and its manufacturing |
JPH0511270A (en) | 1991-07-03 | 1993-01-19 | Toshiba Corp | Formation of mask pattern |
US5259926A (en) | 1991-09-24 | 1993-11-09 | Hitachi, Ltd. | Method of manufacturing a thin-film pattern on a substrate |
JPH06106896A (en) | 1992-09-29 | 1994-04-19 | Nissha Printing Co Ltd | Production of transfer material having uneven pattern |
US5425848A (en) * | 1993-03-16 | 1995-06-20 | U.S. Philips Corporation | Method of providing a patterned relief of cured photoresist on a flat substrate surface and device for carrying out such a method |
US6001515A (en) | 1993-11-03 | 1999-12-14 | Corning Incorporated | Method for printing a color filter |
US5544582A (en) | 1993-11-03 | 1996-08-13 | Corning Incorporated | Method for printing a color filter |
US5701815A (en) | 1993-11-03 | 1997-12-30 | Corning Incorporated | Method of printing a color filter |
US5972545A (en) | 1993-11-03 | 1999-10-26 | Corning Incorporated | Method of printing a color filter |
US5678483A (en) | 1994-02-16 | 1997-10-21 | Corning Incorporated | Method for printing a black border for a color filter |
JPH07240523A (en) | 1994-02-25 | 1995-09-12 | G T C:Kk | Thin film transistor circuit forming method by offset printing |
JPH07239410A (en) | 1994-02-28 | 1995-09-12 | Fujitsu Ltd | Production of color filter |
US5514503A (en) | 1994-10-17 | 1996-05-07 | Corning Incorporated | Apparatus and method for printing a color filter |
US5719078A (en) * | 1995-02-11 | 1998-02-17 | Samsung Electronics Co., Ltd. | Method for making a thin film transistor panel used in a liquid crystal display having a completely self-aligned thin film transistor |
CN1153710A (en) | 1995-12-29 | 1997-07-09 | 三星电子株式会社 | Heat transfer printer |
JPH1082907A (en) | 1996-03-28 | 1998-03-31 | Corning Inc | Color filter and its production |
US6255130B1 (en) * | 1998-11-19 | 2001-07-03 | Samsung Electronics Co., Ltd. | Thin film transistor array panel and a method for manufacturing the same |
KR20000055524A (en) | 1999-02-08 | 2000-09-05 | 윤종용 | A manuraturing method of thin film transistor for liquid crystal display |
US6356318B1 (en) | 1999-06-28 | 2002-03-12 | Alps Electric Co., Ltd. | Active-matrix liquid crystal display having storage capacitors of area smaller than that of pixel electrodes |
JP2001216892A (en) | 2000-02-04 | 2001-08-10 | Samsung Yokohama Research Institute Co Ltd | Method of forming electrode for plasma display |
JP2001326448A (en) | 2000-05-16 | 2001-11-22 | Ougi Shokai:Kk | Method and device for forming etching resist pattern when circuit pattern is formed on printed board |
JP2002098995A (en) | 2000-09-25 | 2002-04-05 | Sharp Corp | Method of manufacturing matrix substrate for liquid crystal |
US6635581B2 (en) * | 2001-06-08 | 2003-10-21 | Au Optronics, Corp. | Method for forming a thin-film transistor |
Non-Patent Citations (1)
Title |
---|
Chinese Office Action dated May 13, 2005 (with English translation). |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090170228A1 (en) * | 2004-12-17 | 2009-07-02 | Lg Display Co., Ltd. | Method of forming pattern having step difference and method of making thin film transistor and liquid crystal display using the same |
US7713799B2 (en) * | 2004-12-17 | 2010-05-11 | Lg. Display Co., Ltd. | Method of forming pattern having step difference and method of making thin film transistor and liquid crystal display using the same |
US20090001617A1 (en) * | 2007-06-27 | 2009-01-01 | Lg Display Co., Ltd. | Alignment key, method for fabricating the alignment key, and method for fabricating thin film transistor substrate using the alignment key |
US7816223B2 (en) * | 2007-06-27 | 2010-10-19 | Lg Display Co., Ltd. | Alignment key, method for fabricating the alignment key, and method for fabricating thin film transistor substrate using the alignment key |
US20110018147A1 (en) * | 2007-06-27 | 2011-01-27 | Lg Display Co., Ltd. | Alignment key, method for fabricating the alignment key, and method for fabricating thin film transistor substrate using the alignment key |
US8004098B2 (en) | 2007-06-27 | 2011-08-23 | Lg Display Co., Ltd. | Alignment key, method for fabricating the alignment key, and method for fabricating thin film transistor substrate using the alignment key |
Also Published As
Publication number | Publication date |
---|---|
JP2004046144A (en) | 2004-02-12 |
US20030219920A1 (en) | 2003-11-27 |
JP3830916B2 (en) | 2006-10-11 |
CN100492171C (en) | 2009-05-27 |
CN1460893A (en) | 2003-12-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7569153B2 (en) | Fabrication method of liquid crystal display device | |
US7361285B2 (en) | Method for fabricating cliche and method for forming pattern using the same | |
JP4431081B2 (en) | Method for manufacturing organic thin film transistor and method for manufacturing liquid crystal display element | |
CN100506555C (en) | Printing plate, method of fabricating the same, and method of fabricating flat panel display using the same | |
US7687330B2 (en) | TFT-LCD pixel structure and manufacturing method thereof | |
US6940578B2 (en) | Method for fabricating liquid crystal display device | |
EP3171411B1 (en) | Thin film transistor and preparation method therefor, array substrate, and display apparatus | |
KR100675639B1 (en) | Fabrication method of organic thin film transistor and liquid crystal display device | |
WO2015100776A1 (en) | Method for manufacturing array substrate of liquid crystal display | |
US7125756B2 (en) | Method for fabricating liquid crystal display device | |
KR101264713B1 (en) | Method for Manufacturing Printing Plate and Method for Manufacturing Liquid Crystal Display Device Using the Same | |
KR101625939B1 (en) | Printing plate for gravure printing, method of manufacturing the same, and method of forming printing pattern using the printing plate | |
KR20070081416A (en) | Method for fabricating thin flim transistor array substrate | |
US10429698B2 (en) | Method for fabricating array substrate, array substrate and display device | |
US20070077692A1 (en) | Liquid crystal display device and fabricating method thereof | |
KR20010045446A (en) | Method of Fabricating Liquid Crystal Display Device | |
KR100662787B1 (en) | Organic thin film transistor and method fabricating thereof, and fabrication method of liquid crystal display device using the same | |
KR100631015B1 (en) | A method for fabricating printing roll and method for forming pattern using the same | |
KR100532085B1 (en) | Printing device of photo resist and fabricating method of tft-lcd therewith | |
US8021818B2 (en) | Printing plate, method of manufacturing of printing plate and liquid crystal display device using the same | |
US20080190307A1 (en) | Pattern transcription device and method of fabricating cliche for the same | |
KR100983593B1 (en) | Method For Fabricating Liquid Crystal Display Device | |
KR100601193B1 (en) | Color filter on array type active matrix substrate and method for fabricating the same | |
KR20040059093A (en) | Fabrication method of liquid crystal display device | |
KR100579181B1 (en) | Method for forming self-align pattern using half-develop |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: LG.PHILIPS LCD CO., LTD., KOREA, REPUBLIC OF Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BAEK, MYOUNG-KEE;CHO, YONG-JIN;PARK, KWON-SHIK;REEL/FRAME:014011/0598 Effective date: 20030414 |
|
AS | Assignment |
Owner name: LG DISPLAY CO., LTD.,KOREA, REPUBLIC OF Free format text: CHANGE OF NAME;ASSIGNOR:LG.PHILIPS LCD CO., LTD.;REEL/FRAME:021754/0045 Effective date: 20080304 Owner name: LG DISPLAY CO., LTD., KOREA, REPUBLIC OF Free format text: CHANGE OF NAME;ASSIGNOR:LG.PHILIPS LCD CO., LTD.;REEL/FRAME:021754/0045 Effective date: 20080304 |
|
FEPP | Fee payment procedure |
Free format text: PAYER NUMBER DE-ASSIGNED (ORIGINAL EVENT CODE: RMPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
FEPP | Fee payment procedure |
Free format text: PAYER NUMBER DE-ASSIGNED (ORIGINAL EVENT CODE: RMPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
FPAY | Fee payment |
Year of fee payment: 8 |
|
FEPP | Fee payment procedure |
Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
LAPS | Lapse for failure to pay maintenance fees |
Free format text: PATENT EXPIRED FOR FAILURE TO PAY MAINTENANCE FEES (ORIGINAL EVENT CODE: EXP.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
STCH | Information on status: patent discontinuation |
Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
|
FP | Lapsed due to failure to pay maintenance fee |
Effective date: 20210804 |