US7576427B2 - Cold weld hermetic MEMS package and method of manufacture - Google Patents
Cold weld hermetic MEMS package and method of manufacture Download PDFInfo
- Publication number
- US7576427B2 US7576427B2 US11/139,960 US13996005A US7576427B2 US 7576427 B2 US7576427 B2 US 7576427B2 US 13996005 A US13996005 A US 13996005A US 7576427 B2 US7576427 B2 US 7576427B2
- Authority
- US
- United States
- Prior art keywords
- cap
- base
- package
- sealing gasket
- cold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related, expires
Links
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- 239000002243 precursor Substances 0.000 claims abstract description 5
- 238000007789 sealing Methods 0.000 claims description 51
- 229910000679 solder Inorganic materials 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 30
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- 239000002184 metal Substances 0.000 claims description 26
- 239000000565 sealant Substances 0.000 claims description 10
- 238000007747 plating Methods 0.000 claims description 6
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- 238000004806 packaging method and process Methods 0.000 description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 13
- 239000010949 copper Substances 0.000 description 13
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 11
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- 229910052738 indium Inorganic materials 0.000 description 10
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- 229910001128 Sn alloy Inorganic materials 0.000 description 6
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/055—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
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- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/01013—Aluminum [Al]
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- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/163—Connection portion, e.g. seal
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Micromachines (AREA)
Abstract
Description
Øb Bond strength
Øo Yield stress
β Area if surface
Y Surface expansion
Y′ Surface expansion at fracture
p Normal pressure
pE Extrusion pressure
Testing of this relationship has shown satisfactory correlation, (N. Bay, Trans. ASME Jour. Engn. Ind., Vol. 101, 1979), for aluminum to aluminum bonding over the surface expansion range of fractional millimeters.
Claims (10)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/139,960 US7576427B2 (en) | 2004-05-28 | 2005-05-27 | Cold weld hermetic MEMS package and method of manufacture |
US12/179,398 US20090151972A1 (en) | 2004-05-28 | 2008-07-24 | Cold weld hermetic mems package and method of manufacture |
US12/874,212 US8394679B2 (en) | 2004-05-28 | 2010-09-01 | Nano-structured gasket for cold weld hermetic MEMS package and method of manufacture |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US57483504P | 2004-05-28 | 2004-05-28 | |
US11/139,960 US7576427B2 (en) | 2004-05-28 | 2005-05-27 | Cold weld hermetic MEMS package and method of manufacture |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/179,398 Continuation-In-Part US20090151972A1 (en) | 2004-05-28 | 2008-07-24 | Cold weld hermetic mems package and method of manufacture |
Publications (2)
Publication Number | Publication Date |
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US20050263878A1 US20050263878A1 (en) | 2005-12-01 |
US7576427B2 true US7576427B2 (en) | 2009-08-18 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US11/139,960 Expired - Fee Related US7576427B2 (en) | 2004-05-28 | 2005-05-27 | Cold weld hermetic MEMS package and method of manufacture |
Country Status (1)
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US (1) | US7576427B2 (en) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040212101A1 (en) * | 2000-03-10 | 2004-10-28 | Chippac, Inc. | Flip chip interconnection structure |
US20060115323A1 (en) * | 2004-11-04 | 2006-06-01 | Coppeta Jonathan R | Compression and cold weld sealing methods and devices |
US20070281453A1 (en) * | 2006-05-31 | 2007-12-06 | Fuji Xerox Co., Ltd. | Electronic component, laser device, optical writing device and image forming apparatus |
US20080080077A1 (en) * | 2006-09-29 | 2008-04-03 | Texas Instruments Incorporated | Low cost window production for hermetically sealed optical packages |
US20080217752A1 (en) * | 2007-03-06 | 2008-09-11 | Shohei Hata | Functional Device Package |
US20090206349A1 (en) * | 2006-08-25 | 2009-08-20 | Hiroshi Yamada | Semiconductor device and method of manufacturing the same |
US20090215228A1 (en) * | 2007-06-08 | 2009-08-27 | Advanced Semiconductor Engineering Inc. | Wafer lever fixture and method for packaging micro-electro-mechanical-system devices |
US20090321903A1 (en) * | 2006-08-25 | 2009-12-31 | Sanyo Electric Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20100025846A1 (en) * | 2008-07-29 | 2010-02-04 | Sumitomo Electric Industries, Ltd. | Metal cap with ringed projection to be welded to stem and ringed groove provided immediately inside of ringed projection and optical device having the same |
US20100065929A1 (en) * | 2006-08-25 | 2010-03-18 | Kazuo Okada | Semiconductor device |
US20100109152A1 (en) * | 2008-10-30 | 2010-05-06 | Nec Electronics Corporation | Electronic device and lid |
US20110074022A1 (en) * | 2000-03-10 | 2011-03-31 | Stats Chippac, Ltd. | Semiconductor Device and Method of Forming Flipchip Interconnect Structure |
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