US7727898B2 - Semiconductor device and method of fabricating same - Google Patents
Semiconductor device and method of fabricating same Download PDFInfo
- Publication number
- US7727898B2 US7727898B2 US11/275,021 US27502105A US7727898B2 US 7727898 B2 US7727898 B2 US 7727898B2 US 27502105 A US27502105 A US 27502105A US 7727898 B2 US7727898 B2 US 7727898B2
- Authority
- US
- United States
- Prior art keywords
- insulating film
- liquid crystal
- display device
- manufacturing
- crystal display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related, expires
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- 238000004519 manufacturing process Methods 0.000 title claims description 43
- 239000004065 semiconductor Substances 0.000 title abstract description 11
- 239000012260 resinous material Substances 0.000 claims abstract description 42
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- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 10
- 239000001301 oxygen Substances 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims description 259
- 238000000034 method Methods 0.000 claims description 68
- 239000011159 matrix material Substances 0.000 claims description 44
- 239000004973 liquid crystal related substance Substances 0.000 claims description 42
- 238000005530 etching Methods 0.000 claims description 30
- 239000010409 thin film Substances 0.000 claims description 26
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 12
- 238000001020 plasma etching Methods 0.000 claims description 11
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 9
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- 239000010410 layer Substances 0.000 description 51
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 23
- 229910052814 silicon oxide Inorganic materials 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 239000010407 anodic oxide Substances 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
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- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 10
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- 238000001312 dry etching Methods 0.000 description 9
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- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000002048 anodisation reaction Methods 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
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- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000003472 neutralizing effect Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910003910 SiCl4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
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- 238000005286 illumination Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
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- 238000001393 microlithography Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2217/00—Gas-filled discharge tubes
- H01J2217/38—Cold-cathode tubes
- H01J2217/49—Display panels, e.g. not making use of alternating current
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
Claims (36)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/275,021 US7727898B2 (en) | 1995-11-27 | 2005-12-02 | Semiconductor device and method of fabricating same |
US12/764,528 US20100200999A1 (en) | 1995-11-27 | 2010-04-21 | Semiconductor device and method of fabricating same |
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP07-332630 | 1995-11-27 | ||
JP33263095 | 1995-11-27 | ||
JP34563195 | 1995-12-09 | ||
JP07-345631 | 1995-12-09 | ||
US08/755,735 US6294799B1 (en) | 1995-11-27 | 1996-11-25 | Semiconductor device and method of fabricating same |
US09/946,733 US6740599B2 (en) | 1995-11-27 | 2001-09-04 | Method of fabricating contact holes in a semiconductor device |
US10/819,964 US6972263B2 (en) | 1995-11-27 | 2004-04-08 | Fabricating a tapered hole incorporating a resinous silicon containing film |
US11/275,021 US7727898B2 (en) | 1995-11-27 | 2005-12-02 | Semiconductor device and method of fabricating same |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/819,964 Continuation US6972263B2 (en) | 1995-11-27 | 2004-04-08 | Fabricating a tapered hole incorporating a resinous silicon containing film |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/764,528 Continuation US20100200999A1 (en) | 1995-11-27 | 2010-04-21 | Semiconductor device and method of fabricating same |
Publications (2)
Publication Number | Publication Date |
---|---|
US20060060861A1 US20060060861A1 (en) | 2006-03-23 |
US7727898B2 true US7727898B2 (en) | 2010-06-01 |
Family
ID=26574243
Family Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/755,735 Expired - Lifetime US6294799B1 (en) | 1995-11-27 | 1996-11-25 | Semiconductor device and method of fabricating same |
US09/946,733 Expired - Fee Related US6740599B2 (en) | 1995-11-27 | 2001-09-04 | Method of fabricating contact holes in a semiconductor device |
US10/819,964 Expired - Fee Related US6972263B2 (en) | 1995-11-27 | 2004-04-08 | Fabricating a tapered hole incorporating a resinous silicon containing film |
US11/275,021 Expired - Fee Related US7727898B2 (en) | 1995-11-27 | 2005-12-02 | Semiconductor device and method of fabricating same |
US12/764,528 Abandoned US20100200999A1 (en) | 1995-11-27 | 2010-04-21 | Semiconductor device and method of fabricating same |
Family Applications Before (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/755,735 Expired - Lifetime US6294799B1 (en) | 1995-11-27 | 1996-11-25 | Semiconductor device and method of fabricating same |
US09/946,733 Expired - Fee Related US6740599B2 (en) | 1995-11-27 | 2001-09-04 | Method of fabricating contact holes in a semiconductor device |
US10/819,964 Expired - Fee Related US6972263B2 (en) | 1995-11-27 | 2004-04-08 | Fabricating a tapered hole incorporating a resinous silicon containing film |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/764,528 Abandoned US20100200999A1 (en) | 1995-11-27 | 2010-04-21 | Semiconductor device and method of fabricating same |
Country Status (3)
Country | Link |
---|---|
US (5) | US6294799B1 (en) |
JP (5) | JP4999799B2 (en) |
KR (1) | KR100318839B1 (en) |
Cited By (6)
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---|---|---|---|---|
US20100200999A1 (en) * | 1995-11-27 | 2010-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating same |
US8748895B2 (en) | 2002-05-13 | 2014-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US8901554B2 (en) | 2011-06-17 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including channel formation region including oxide semiconductor |
US9087726B2 (en) | 2012-11-16 | 2015-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11054687B2 (en) | 2016-08-09 | 2021-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device, display device, display module, and electronic device |
US11329166B2 (en) | 2015-11-20 | 2022-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device including the semiconductor device, and an electronic device including the semiconductor device |
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US5814529A (en) * | 1995-01-17 | 1998-09-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor |
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US5940732A (en) | 1995-11-27 | 1999-08-17 | Semiconductor Energy Laboratory Co., | Method of fabricating semiconductor device |
TW309633B (en) * | 1995-12-14 | 1997-07-01 | Handotai Energy Kenkyusho Kk | |
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US6462722B1 (en) * | 1997-02-17 | 2002-10-08 | Seiko Epson Corporation | Current-driven light-emitting display apparatus and method of producing the same |
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JP4294745B2 (en) * | 1997-09-26 | 2009-07-15 | 株式会社半導体エネルギー研究所 | Method for manufacturing photoelectric conversion device |
US6518591B1 (en) * | 1998-12-02 | 2003-02-11 | Cypress Semiconductor Corporation | Contact monitor, method of forming same and method of analizing contact-, via- and/or trench-forming processes in an integrated circuit |
US6475836B1 (en) * | 1999-03-29 | 2002-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
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US7187947B1 (en) | 2000-03-28 | 2007-03-06 | Affinity Labs, Llc | System and method for communicating selected information to an electronic device |
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JP2003324201A (en) * | 2002-02-26 | 2003-11-14 | Hitachi Ltd | Thin-film transistor and display device using the same |
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Also Published As
Publication number | Publication date |
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JP2008306208A (en) | 2008-12-18 |
US20020006690A1 (en) | 2002-01-17 |
KR970030682A (en) | 1997-06-26 |
KR100318839B1 (en) | 2002-10-04 |
JP6089374B2 (en) | 2017-03-08 |
JP2012134568A (en) | 2012-07-12 |
US20060060861A1 (en) | 2006-03-23 |
US20040192025A1 (en) | 2004-09-30 |
JP2014078762A (en) | 2014-05-01 |
JP4999799B2 (en) | 2012-08-15 |
US6294799B1 (en) | 2001-09-25 |
JP5719798B2 (en) | 2015-05-20 |
JP5063820B2 (en) | 2012-10-31 |
JP2012151492A (en) | 2012-08-09 |
US6740599B2 (en) | 2004-05-25 |
JP2015164226A (en) | 2015-09-10 |
US6972263B2 (en) | 2005-12-06 |
US20100200999A1 (en) | 2010-08-12 |
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