Búsqueda Imágenes Maps Play YouTube Noticias Gmail Drive Más »
Iniciar sesión
Usuarios de lectores de pantalla: deben hacer clic en este enlace para utilizar el modo de accesibilidad. Este modo tiene las mismas funciones esenciales pero funciona mejor con el lector.


  1. Búsqueda avanzada de patentes
Número de publicaciónUS7847695 B2
Tipo de publicaciónConcesión
Número de solicitudUS 11/574,139
Número de PCTPCT/DE2005/001468
Fecha de publicación7 Dic 2010
Fecha de presentación19 Ago 2005
Fecha de prioridad23 Ago 2004
También publicado comoCA2577901A1, CN101052975A, DE102004040831A1, EP1782339A1, EP1782339B1, US20080061986, WO2006021193A1
Número de publicación11574139, 574139, PCT/2005/1468, PCT/DE/2005/001468, PCT/DE/2005/01468, PCT/DE/5/001468, PCT/DE/5/01468, PCT/DE2005/001468, PCT/DE2005/01468, PCT/DE2005001468, PCT/DE200501468, PCT/DE5/001468, PCT/DE5/01468, PCT/DE5001468, PCT/DE501468, US 7847695 B2, US 7847695B2, US-B2-7847695, US7847695 B2, US7847695B2
InventoresJurgen Ficker, Markus Lorenz, Wolfgang Clemens, Markus Bohm
Cesionario originalPolyic Gmbh & Co. Kg
Exportar citaBiBTeX, EndNote, RefMan
Enlaces externos: USPTO, Cesión de USPTO, Espacenet
External package capable of being radio-tagged
US 7847695 B2
The invention relates to an external package, particularly one with a conductive coating and in whose surroundings an RFID tag is used. The conductive area of the electrically conductive layer is interrupted by a structure.
Previous page
Next page
1. An external package for a product having an electric component, comprising:
at least one support and an electrically conductive layer coupled to the support, the external package comprising one of a paper or a polymer film forming the support;
the electrically conductive layer having an electrically conductive area, the layer comprising a structure and/or a coating arranged to reduce the electrical shielding otherwise exhibited by the conductive area in the surroundings of the external package such that electromagnetic radiation penetrates through the electrically conductive layer, the use of the electric component which delivers or receives information externally through the external package and/or whose power supply is fed through the external package thereby being not adversely affected or thereby is adversely affected only to an extent such that the component remains operable;
the structure for dividing the conductive area of the electrically conductive layer into at least two electrically isolated areas and being arranged to interrupt the electrically conductive area of the electrically conductive layer at least once;
the electrical component including a coil adjacent to the conductive layer, the coil having a center, the structure being arranged opposite the coil center, the interruption dividing the conductive area in at least the area adjacent to the coil into two halves.
2. The external package as claimed in claim 1, wherein the structure comprises a recess in the conductive area of the electrically conductive layer.
3. The external package as claimed in claim 1 wherein the structure comprises at least two recesses.
4. The external package as claimed in claim 1 wherein the coating for reducing the shielding comprises a metal layer with a maximum thickness of 1 μm with further layers for completing the external package.
5. The external package as claimed in claim 1 wherein the structure and/or portions of the structure form electric components, comprising at least one of an antenna, a capacitor, a conductor track, and a diode or portions thereof.
6. The external package as claimed in claim 1 wherein the structure at least partly exhibits not only its technical effect of reducing electrical shielding, but also a visual effect, comprising reproducing at least one of an image, a security feature, a lettering, a miscellaneous visual feature and/or a logo.
7. The external package as claimed in claim 1 , wherein the surface of the external package is arranged to exhibit an image.
8. The external package as claimed in claim 1 arranged for use in at least one of a cigarette package, a grocery package, a medicine package, a radio, a remote control or a microwave oven.
9. The external package as claimed in claim 1 wherein the support has a thickness of less than or equal to about 50 μm.
10. The external package as claimed in claim 1 wherein the electrically conductive layer has a thickness of less than or equal to about 50 μm.
11. The external package as claimed in claim 1 wherein the structure has a width and a length, the width having a value of up to about 500 μm.
12. The external package as claimed in claim 1 wherein the external package has a side of a given extent, the structure extending over more than half of the given extent of the side of the external package.

The invention relates to an external package, particularly one enclosing a product with a radio tag, such as an RFID (Radio Frequency IDentification) tag, and/or in whose proximity there is such a tag.

Groceries, cigarettes, tobacco in general, chewing gum, chocolates and much more are typically packaged in foils which keep the content fresh. The foils are often made of paper or another support (such as a polymer film) onto which a thin electrically conductive layer, normally a metal layer, typically aluminum, has been put. In this case, the thin metal layer has quite a few effects; among other things it has a shiny appearance, forms a barrier layer for oxygen and moisture, reflects the radiation of heat and has a correspondingly insulating character.

A drawback of this external package with an electrically conductive layer when using RFID tags, particularly EPC (Electronic Product Code) tags and EAS (Electronic Article Surveillance) tags, as is currently being planned on a grand scale, is that the electrically conductive layer of the external package produces an electrically conductive area which shields electromagnetic waves undesirably, in similar fashion to in what is known as a Faraday cage, or reflects them and hence makes it difficult or even impossible to use radio tags and/or miscellaneous electric components on the product and/or on the external package.

It is therefore an object of the present invention to provide an external package having a support and an electrically conductive layer which does not prevent the use of tags in the surroundings of the external package.

This object is achieved by the subject matter of the independent and dependent claims, the description and the figures.

The invention relates to an external package for a product having an electric component, comprising at least one support and an electrically conductive layer, where the electrically conductive layer has a structure and/or a coating which reduces the shielding produced by its conductive area in the surroundings of the external package such that the use of an electric component which delivers or receives information externally through the external package and/or whose power supply is fed through the external package is not adversely affected or is adversely affected only to an extent such that the component is still operable.

In this context, the term “in the surroundings” covers the following:

Firstly a tag which is arranged directly on the product and/or within the external package.

Secondly a tag which is in proximity to the external package.

The shielding by the external package means that disturbances in the case of conventional tags within and/or directly on the external packages and also in the case of tags which are outside the external package, but in proximity thereto, normally arise as a result of the electromagnetic waves being reflected by the metal, for example. In this context, the term “in the surroundings” or “close” means “in the region of the typical reading range of the tags”, for example typically up to approximately 70 cm at 13.56 MHz, and in the case of UHF (Ultra High Frequency ˜850-950 MHz) this may be up to approximately 2 m, and in the GHz range even more still (several meters).

The term “that the component is still operable” means the shielding which is still tolerable and may not indicate a specific value, since this is dependent on many factors such as transmission power, transmission frequency and/or the type of component, such as the type of radio tag. Shielding which is no longer tolerable is a reduction in the reading distance by half (e.g. from 70 cm to 35 cm), for example, and/or exists when any information is shielded down to below the noise limit and/or the power supply for a radio frequency tag is reduced to below the minimum operating voltage.

A shielding-reducing coating for the conductive layer of the external package may be used as an alternative to the structure and/or in addition to it and preferably has a high electrical impedance (e.g. >10^5 Ohm m) or is insulating.

By way of example, the visually metallic effect can be achieved merely by very thin metal layers (of a few 10 nm, which have very poor electrical conductivity on account of the small layer thickness and/or because they have a very high level of interrupt-on owing to their production process, e.g. vapor deposition, sputtering), which can then be brought into line with the further requirements of the external package using various lacquer layers.

It is equally possible to put an image on the external package, possibly even over the structure.

The structure in the conductive layer changes the shielding and/or reflection effects such that induced, shielding and/or reflecting currents in the conductive layer (e.g. as a result of eddy currents) are reduced or even prevented. As a result, the electromagnetic radiation then penetrates the external package and/or it is possible for coupling, particularly inductive, capacitive, near-field or far-field coupling, to take place. It is then possible to transmit electric power and/or information in the surroundings of the external package, even in the region of the transmission powers of RFID tags.

The transmission powers are usually stipulated by laws. An overview of the transmission powers which can be used for RFID applications is given in (Klaus Finkenzeller, “RFID-Handbuch” [RFID manual], 2nd edition, Hauser Verlag Munich, 2000, ISBN 3-446-21278-7), for example. Accordingly, the limit value for the carrier power for 13.56 MHz applications in Germany is 68.5 dBμA at a distance of 3 m and 13.5 dBμA at a distance of 30 m from the transmitter, with the magnetic H field for the radio installation being measured. The power limits vary for different frequencies and for different countries.

The structure interrupts the electrically conductive area of the electrically conductive layer once or a plurality of times, with the interruption preferably dividing at least the area above a coil of the electric component, for example, into two halves, for example. The structure disturbs the shielding most effectively when it is arranged opposite and in the center of a coil of the electric component.

By way of example, the structure is a simple recess which completely or partly passes through the conductive area of the electrically conductive layer. The shape of the recesses is irrelevant, only the size and shape of the remaining conductive regions is important, which need to be designed such that eddy currents are prevented.

The structure divides the conductive area of the electrically conductive layer into at least two smaller conductive areas. The structure can also divide the conductive area of the electrically conductive layer into many small conductive areas, however. By way of example, the structure comprises at least two parallel and/or at least two nonparallel recesses. In this case, what is important is not the shape of the recesses but rather the size and shape of the remaining conductive area (with the same area, for example, an open circle has hardly any effect but a closed circle has a very pronounced shielding effect), and at a given frequency a smaller area produces little shielding but a larger scale produces greater shielding.

The external package can be produced by putting an electrically conductive layer onto a support, for example paper or foil, and then patterning it in a subsequent work step. The structure is preferably made using simple means and/or minimal actions.

By way of example, what is known as dry phase patterning is particularly advantageous (for example see the publication by Pira International Copyr. 2002, “RFID in Packaging”, Dr. Peter Harrp, “Pira on printing”, ISBN 1858029457; PAELLA Project ACREO, dry phase patterning method; Antenna for EAS RFID p. 49 fig. 6.2), since this uses no wet-chemical methods. Advantageously, the conductive layer of the external package is patterned in large volumes and/or inexpensively by a dry patterning method, for example using a patterned scratching method (which is also suitable for roll-to-roll).

It is naturally also possible to use any other patterning direct or indirect, additive or subtractive methods, however, depending on the type of external package (e.g. patterned vapor deposition, printing with a protective Lacquer and a subsequent wet or dry etching method).

For metals, the structure can be made by wet chemical means using etching processes, by dry process steps such as dry etching, cutting and/or punching processes and/or by dry patterning using impression the impressed points being removed with a knife and/or being able to be filled with another material.

Conversely, it is also possible to put an already patterned electrically conductive layer onto the support, however, as is possible by means of printing (e.g. conductive pastes, conductive silver, organically based materials) or bonding/lamination (e.g. aluminum, copper, silver), for example. The electrically conductive layer can also be put on in patterned form by vapor deposition and/or sputtering. Other methods are lamination, electroplating, spraying, dunking, blade coating and/or printing.

In this case, the electrically conductive layer is patterned/interrupted such that, although the electric power is interrupted, the external package and particularly the foil used as support are patterned as an entire still mechanical layer or a portion thereof, and the support is essentially retained. It is not even necessary to cut through the electrically conductive area completely, and only the conductive connection within the area is interrupted during patterning.

The depth of the recess in the structure matches the thickness of the external package's electrically conductive layer. It can make up the entire thickness of the layer or just a portion of the thickness so long as it is ensured that the structure interrupts the conductive contact within the conductive area and/or the resistance within the conductive area is so high that the shielding produced by the conductive area does not adversely affect the use of radio tags.

The width of the structure is arbitrary so long as it interrupts the conductive area. By way of example, the width of the structure is typically a few 10-500 μm. The minimum width is dependent only on the process used (in order to guarantee secure electrical interruption).

The structure does not just remove and/or expel material from the electrically conductive layer, for example, but rather it is also possible to work and/or impress another, for example insulating, material into the electrically conductive layer, so that shielding within the external package is prevented to a sufficient extent. The use of additionally introduced material may turn out to be advantageous particularly for applications in which the freshness preservation effect of the external package, particularly also on the barrier properties of the external package toward air (oxygen and/or moisture), is in the foreground.

The external package can, but does not have to, be visually shaped by the structure, it may also comprise any other layers, both for visual and for functional purposes, with graphical forms of the external package being able to be produced by the structure or supported by the structure or else being put on the external package without disturbance by the structure.

The size of the remaining continuously conductive areas is dependent on the frequency used and on the size of the antennas used. In this context, when inductive coupling is used the size of the antennas used is crucial and when electromagnetic waves are used the frequency is crucial. One practicality found is that for general prevention of shielding the following is true: the smaller the individual areas the better. A preferred maximum size for the still remaining conducting area of the electrically conductive layer for inductive coupling is taken to be approximately half the area of the transmission antenna, and for larger areas the degree of shielding increases “rapidly”, as can be seen from FIG. 7 using a real measurement.

The areas patterned in this manner may take any form (image, logo and/or writing) so long as it is ensured that overall no shielding character arises. The structure can attain a wide variety of visual effects, in particular it is also able to be used for marketing purposes, or for brand protection, or theft prevention or other security features. As an alternative or in addition, the structure may also have other technical functional electrical effects, for example antennas for RFID tags can be produced by the structure.

In this context, in accordance with one advantageous refinement, the structure and/or a portion thereof forms an electric component, for example when it is in the form of an antenna (e.g. coil form or interrupted bar form) for RFID tags and/or other radio tags. In this context, the tag is also situated directly on the portion of the external package with the structure, for example.

It is naturally also possible to produce other electric components using the structure, such as capacitors. For this, however, conductive layers are required on both sides of the external package's support. Similarly, it is also possible to produce resistive tracks by means of a suitable form for the conductor tracks.

By way of example, one portion (normally the largest portion) of the overall external package is patterned and altered using methods as discussed, so that it no longer shields and/or reflects electromagnetic radiation, and at least one other portion of the external package is patterned and altered such that this structure can be used as an antenna for an RFID tag or radio tag or for other purposes, For example.

The typically used external packages for groceries, cigarettes, tobacco in general, chewing gum, chocolates, butter, margarine, cheese, etc. comprise paper or another support, for example including a polymer film (PET, PES, PEN, polyimide, etc.), as the support material with an electrically conductive layer laminated thereon. The possible materials for producing the electrically conductive layer include all metals (e.g. aluminum, copper, silver, gold, chromium, titanium, tin, zinc, iron, etc. and any alloys), conductive pastes (e.g. conductive silver, CarbonBlack (which are pastes with graphite/carbon black)), conductive organically based materials (e.g. polyaniline, Pedot/Pss, or the like) or organometallic systems (e.g. inks with dissolved metal compounds) or combinations thereof.

The thickness of the support varies and is typically 20-100 g/m^2 in the case of paper, with 30-50 g/m2 being usual, for example. In the case of polymer films, it is possible to use any thicknesses, depending on the type of external package, with 10-50 μm (e.g. PET, PPS or similar materials) being typical, for example. The thickness of the conductive laminated layer is 3 to 50 μm, preferably 5-15 μm (e.g. for aluminum-laminated paper for cigarette packages, for example). This may naturally also vary for the other materials or methods mentioned. It is naturally also possible to put on further layers apart from those mentioned, e.g. a protective lacquer to prevent scratching or as a seal, and also, naturally, colored layers for visual misprinting or else further layers for other purposes.

In this case, particularly the radio tags are in the foreground as the electric component. Examples of these are RFID tags, particularly EPC (Electronic Product Code) tags and/or EAS (Electronic Article Surveillance) tags. These tags are based on nationally or internationally released frequency bands for signal transmission, these typically being: 125-135 kHz, 13.56 MHz, 860-950 MHz or 2.45 GHz. In some cases, other frequency bands may also be used, such as approximately 6-8 MHz for theft prevention tags.

It is naturally also possible to produce other fields of use, e.g. use of remote controls (typically in the region of approximately 20-60 MHz), mobile radio (850-2000 MHz) and radio (LW, SW, VHF or comparable) or satellite radio. It is also possible to design external packaging such that it does not need to be removed in microwave ovens (e.g. for heating meals).

The patterning may also be made such that certain frequency ranges and/or directions of polarization are passed and others are shielded or reflected, e.g. using the size and shape of the conductive areas.

The electric component may also comprise at least one functional layer made of organically based material and/or may generally be associated with polymer electronics or with organic electronics.

The patterned external package can then be fed back into the conventional packaging process.

The invention is explained in more detail below using exemplary embodiments:

FIG. 1 schematically shows a conductive area in which a structure interrupts the electrically conductive connection within the area.

FIG. 2 shows the same patterned conductive area, with the dimensions of the structure being able to be seen.

FIGS. 3 and 4 show patterned electrically conductive components in relation to the position of the structure.

FIG. 5 shows an example of a structure, and

FIG. 6 finally shows an external package with the position shown for the inner coil and on the outside a corresponding coil which corresponds to the coil shown on the inside.

FIG. 7 shows a real measurement for the shielding effect of a conductive layer which is pushed between a transmitter and a receiver antenna.

FIG. 1 shows an external package 1 with a structure 2 on it, it being clearly visible that the structure 2 does not go right through, but extends over more than half of the external package. A structure 2 which goes right through is naturally also covered by the invention.

FIG. 2 shows the external package 1 in a perspective view on which it is possible to see the support 13 and the electrically conductive layer 14 with the structure 2.

The position of the structure 2 and its dimensions can be seen in FIG. 2. The width 4 of the structure 2 can be chosen freely so long as the electrical conductivity is interrupted by the width 4 of this structure 2. The same applies to the depth 3 of the structure 2 (the depth may also cover the entire conductive layer, for security reasons even right into the support material). Only the length 5 of the structure 2 is related to the coil of the electric component and/or of the radio tag (not shown in FIG. 2) such that it measures at least half of the coil.

FIG. 3 shows the external package 1 with a structure 2 which does not cover the entire length of the electrically conductive area, but the entire length of the antenna 12 (the antenna shown here, merely by way of example and schematically, is a coil for inductive coupling). The form of the antenna may be quite different, depending on the field of use; e.g. in the form of a dipole.

FIG. 4 shows a similar design to that in FIG. 3 with the difference that in this case the structure 2 extends only as far as at least half of the extent of the coil 12. In both cases, shielding by the electrically conductive layer of the external package is prevented to such an extent that the use of radio tags is appropriate, that is to say the component is still operable.

FIG. 5 shows an example of a structure which can be put onto the electrically conductive layer of the external package 1 over a large area. It is possible to see a diamond-shaped structure with a large number of parallel and a large number of nonparallel recesses 7 in which the electrically conductive area 6 of the electrically conductive layer of the external package 1 is divided into a large number of small areas. Shielding, which would sensitively disturb the use of radio tags, is effectively prevented by this means because small conductive areas bring about no disturbances in the radio link between the radio tag and the reader. Particularly if the position of the coil within the external package is not clear, it makes sense to put on a large-area structure, as shown here, because the most effective prevention of shielding is achieved by a recess in the electrically conductive area opposite the coil of the electric component, said coil always being automatically covered too with application over a large area.

FIG. 6 shows the shielding area (i.e. the external package) in the form of a packet 10. An external transmission antenna 8 is opposite the receiver antenna 11 which is in the packet. On the basis of the prior art, the electromagnetic radiation between the transmission antenna 8 and the receiver antenna 11 is shielded by the packet between them, which has a conductive area in or on it, so that no radio link is set up. However, the structure 9 based on the invention interrupts the conductive area, and it is therefore possible to set up radio contact between the transmitter 8 and the receiver 11. The same naturally also applies if the receiver antenna 11 is not “inside” the packet but rather on and outside the external package but in its surroundings.

The structure 9 shown is just one example and, on the basis of the invention, the structure may naturally take all possible forms, e.g. including the form shown in FIG. 5.

FIG. 7 shows a measurement of the shielding effect of a conductive layer. Between the transmission antenna 8 and the reception antenna 11, a conductive layer, namely the external package layer 1, is pushed from the left to the right in the direction of the arrow 18. The graph at the top now shows the induced voltage measured at 11 as a function of the overlap by the conductive layer 1. It can clearly be seen that up to an approximately ⅓ overlap the induced voltage remains constant, that is to say there is no shielding effect. With a larger overlap, a rapid drop in the induced voltage then occurs, that is to say that a severe shielding effect occurs. With a complete overlap, it is almost impossible to measure any induced voltage (essentially noise), which indicates a largely full shielding effect. A similar response is also obtained when the transmitter and receiver antennas are situated on one side of the conductive foil and the conductive foil is passed very close to one of the antennas.

The possibly of reducing the shielding by electrically conductive external packages, disclosed here for the first time, allows very simple means and minimum intervention to be used to reduce the unwanted shielding effect of conductive areas to magnetic and electromagnetic fields significantly. It is therefore possible to accommodate radio tags, for example, within or in the surroundings of metallized packages without adversely affecting their operability.

The already publicized intention of many companies to put RFID tags on a large number of products in future is also made possible here for products which are packed in metal foils, metallized and/or metal-laminated paper or foil and/or composite materials which contain metal layers.

Citas de patentes
Patente citada Fecha de presentación Fecha de publicación Solicitante Título
US351205211 Ene 196812 May 1970Gen Motors CorpMetal-insulator-semiconductor voltage variable capacitor with controlled resistivity dielectric
US376909612 Mar 197130 Oct 1973Bell Telephone Labor IncPyroelectric devices
US39550988 Ago 19744 May 1976Hitachi, Ltd.Switching circuit having floating gate mis load transistors
US399912214 Feb 197521 Dic 1976Siemens AktiengesellschaftSemiconductor sensing device for fluids
US424629814 Mar 197920 Ene 1981American Can CompanyRapid curing of epoxy resin coating compositions by combination of photoinitiation and controlled heat application
US43026489 Jul 198024 Nov 1981Shin-Etsu Polymer Co., Ltd.Key-board switch unit
US434005724 Dic 198020 Jul 1982S. C. Johnson & Son, Inc.Radiation induced graft polymerization
US44420195 Ene 198110 Abr 1984Marks Alvin MElectroordered dipole suspension
US45542296 Abr 198419 Nov 1985At&T Technologies, Inc.Multilayer hybrid integrated circuit
US486519729 Abr 198812 Sep 1989Unisys CorporationElectronic component transportation container
US49260523 Mar 198715 May 1990Kabushiki Kaisha ToshibaRadiation detecting device
US493711915 Dic 198826 Jun 1990Hoechst Celanese Corp.Textured organic optical data storage media and methods of preparation
US507581618 Jul 199024 Dic 1991Vaisala OyCapacitive humidity sensor construction and method for manufacturing the sensor
US517383515 Oct 199122 Dic 1992Motorola, Inc.Voltage variable capacitor
US520652527 Ago 199027 Abr 1993Nippon Petrochemicals Co., Ltd.Electric element capable of controlling the electric conductivity of π-conjugated macromolecular materials
US525992624 Sep 19929 Nov 1993Hitachi, Ltd.Method of manufacturing a thin-film pattern on a substrate
US532124025 Ene 199314 Jun 1994Mitsubishi Denki Kabushiki KaishaNon-contact IC card
US53471444 Jul 199113 Sep 1994Centre National De La Recherche Scientifique (Cnrs)Thin-layer field-effect transistors with MIS structure whose insulator and semiconductor are made of organic materials
US536473527 Ago 199215 Nov 1994Sony CorporationMultiple layer optical record medium with protective layers and method for producing same
US53955041 Feb 19947 Mar 1995Asulab S.A.Electrochemical measuring system with multizone sensors
US548083911 Ene 19942 Ene 1996Kabushiki Kaisha ToshibaSemiconductor device manufacturing method
US548685130 Oct 199123 Ene 1996Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V.Illumination device using a pulsed laser source a Schlieren optical system and a matrix addressable surface light modulator for producing images with undifracted light
US550239621 Sep 199426 Mar 1996Asulab S.A.Measuring device with connection for a removable sensor
US55282229 Sep 199418 Jun 1996International Business Machines CorporationRadio frequency circuit and memory in thin flexible package
US554688930 Sep 199420 Ago 1996Matsushita Electric Industrial Co., Ltd.Method of manufacturing organic oriented film and method of manufacturing electronic device
US556987930 Mar 199529 Oct 1996Gemplus Card InternationalIntegrated circuit micromodule obtained by the continuous assembly of patterned strips
US55742919 Dic 199412 Nov 1996Lucent Technologies Inc.Article comprising a thin film transistor with low conductivity organic layer
US557851320 Abr 199526 Nov 1996Mitsubishi Denki Kabushiki KaishaMethod of making a semiconductor device having a gate all around type of thin film transistor
US558079431 May 19953 Dic 1996Metrika Laboratories, Inc.Disposable electronic assay device
US562519916 Ene 199629 Abr 1997Lucent Technologies Inc.Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors
US562953015 May 199513 May 1997U.S. Phillips CorporationSemiconductor device having an organic semiconductor material
US563098614 Mar 199520 May 1997Bayer CorporationDispensing instrument for fluid monitoring sensors
US565264524 Jul 199529 Jul 1997Anvik CorporationHigh-throughput, high-resolution, projection patterning system for large, flexible, roll-fed, electronic-module substrates
US56910897 Jun 199525 Nov 1997Texas Instruments IncorporatedIntegrated circuits formed in radiation sensitive material and method of forming same
US569395629 Jul 19962 Dic 1997MotorolaInverted oleds on hard plastic substrate
US570582627 Jun 19956 Ene 1998Hitachi, Ltd.Field-effect transistor having a semiconductor layer made of an organic compound
US572942824 Abr 199617 Mar 1998Nec CorporationSolid electrolytic capacitor with conductive polymer as solid electrolyte and method for fabricating the same
US585413910 Sep 199729 Dic 1998Hitachi, Ltd.Organic field-effect transistor and production thereof
US5858500 *10 Mar 199412 Ene 1999W. L. Gore & Associates, Inc.Tamper respondent enclosure
US586997226 Feb 19979 Feb 1999Birch; Brian JeffreyTesting device using a thermochromic display and method of using same
US588339723 May 199716 Mar 1999Mitsubishi Denki Kabushiki KaishaPlastic functional element
US589224410 Abr 19976 Abr 1999Mitsubishi Denki Kabushiki KaishaField effect transistor including πconjugate polymer and liquid crystal display including the field effect transistor
US594655125 Mar 199731 Ago 1999Dimitrakopoulos; Christos DimitriosFabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric
US596704812 Jun 199819 Oct 1999Howard A. FromsonMethod and apparatus for the multiple imaging of a continuous web
US597031815 May 199819 Oct 1999Electronics And Telecommunications Research InstituteFabrication method of an organic electroluminescent devices
US59735989 Sep 199826 Oct 1999Precision Dynamics CorporationRadio frequency identification tag on flexible substrate
US59947736 Mar 199730 Nov 1999Hirakawa; TadashiBall grid array semiconductor package
US59978175 Dic 19977 Dic 1999Roche Diagnostics CorporationElectrochemical biosensor test strip
US599880511 Dic 19977 Dic 1999Motorola, Inc.Active matrix OED array with improved OED cathode
US603691921 Jul 199714 Mar 2000Roche Diagnostic GmbhDiagnostic test carrier with multilayer field
US604597719 Feb 19984 Abr 2000Lucent Technologies Inc.Process for patterning conductive polyaniline films
US606033812 Ene 19999 May 2000Mitsubishi Denki Kabushiki KaishaMethod of making a field effect transistor
US607271614 Abr 19996 Jun 2000Massachusetts Institute Of TechnologyMemory structures and methods of making same
US608310431 Dic 19984 Jul 2000Silverlit Toys (U.S.A.), Inc.Programmable toy with an independent game cartridge
US608719628 Ene 199911 Jul 2000The Trustees Of Princeton UniversityFabrication of organic semiconductor devices using ink jet printing
US61079209 Jun 199822 Ago 2000Motorola, Inc.Radio frequency identification tag having an article integrated antenna
US61338353 Dic 199817 Oct 2000U.S. Philips CorporationIdentification transponder
US61506688 Sep 199921 Nov 2000Lucent Technologies Inc.Thin-film transistor monolithically integrated with an organic light-emitting diode
US6162550 *16 Mar 199819 Dic 2000P. P. Payne LimitedTagging material
US61809563 Mar 199930 Ene 2001International Business Machine Corp.Thin film transistors with organic-inorganic hybrid materials as semiconducting channels
US61976637 Dic 19996 Mar 2001Lucent Technologies Inc.Process for fabricating integrated circuit devices having thin film transistors
US62074729 Mar 199927 Mar 2001International Business Machines CorporationLow temperature thin film transistor fabrication
US621513020 Ago 199810 Abr 2001Lucent Technologies Inc.Thin film transistors
US622155310 Abr 200024 Abr 20013M Innovative Properties CompanyThermal transfer element for forming multilayer devices
US6249227 *4 Nov 199819 Jun 2001Intermec Ip Corp.RFID integrated in electronic assets
US625151319 Ago 199826 Jun 2001Littlefuse, Inc.Polymer composites for overvoltage protection
US628456217 Nov 19994 Sep 2001Agere Systems Guardian Corp.Thin film transistors
US62911261 Dic 200018 Sep 20013M Innovative Properties CompanyThermal transfer element and process for forming organic electroluminescent devices
US63001412 Mar 20009 Oct 2001Helix Biopharma CorporationCard-based biosensor device
US632157110 Dic 199927 Nov 2001Corning IncorporatedMethod of making glass structures for flat panel displays
US63227369 Sep 199927 Nov 2001Agere Systems Inc.Method for fabricating molded microstructures on substrates
US63292261 Jun 200011 Dic 2001Agere Systems Guardian Corp.Method for fabricating a thin-film transistor
US633046426 Ago 199911 Dic 2001Sensors For Medicine & ScienceOptical-based sensing devices
US63355395 Nov 19991 Ene 2002International Business Machines CorporationMethod for improving performance of organic semiconductors in bottom electrode structure
US63360173 Mar 19991 Ene 2002Canon Kabushiki KaishaMounting member for mounting a flange to an end of a cylindrical member of an electrophotographic photosensitive drum of a process cartridge, such a flange, such a drum, and such a process cartridge
US63408225 Oct 199922 Ene 2002Agere Systems Guardian Corp.Article comprising vertically nano-interconnected circuit devices and method for making the same
US63446621 Nov 20005 Feb 2002International Business Machines CorporationThin-film field-effect transistor with organic-inorganic hybrid semiconductor requiring low operating voltages
US63625096 Oct 200026 Mar 2002U.S. Philips ElectronicsField effect transistor with organic semiconductor layer
US638480425 Nov 19987 May 2002Lucent Techonologies Inc.Display comprising organic smart pixels
US640339628 Ene 199911 Jun 2002Thin Film Electronics AsaMethod for generation of electrically conducting or semiconducting structures in three dimensions and methods for erasure of the same structures
US642945017 Ago 19986 Ago 2002Koninklijke Philips Electronics N.V.Method of manufacturing a field-effect transistor substantially consisting of organic materials
US6483473 *18 Jul 200019 Nov 2002Marconi Communications Inc.Wireless communication device and method
US649811431 Ago 200024 Dic 2002E Ink CorporationMethod for forming a patterned semiconductor film
US651799514 Mar 200011 Feb 2003Massachusetts Institute Of TechnologyFabrication of finely featured devices by liquid embossing
US65189499 Abr 199911 Feb 2003E Ink CorporationElectronic displays using organic-based field effect transistors
US652110913 Sep 200018 Feb 2003Interuniversitair Microelektronica Centrum (Imec) VzwDevice for detecting an analyte in a sample based on organic materials
US65488756 Mar 200115 Abr 2003Kabushiki Kaisha ToshibaSub-tenth micron misfet with source and drain layers formed over source and drains, sloping away from the gate
US655584015 Feb 200029 Abr 2003Sharp Kabushiki KaishaCharge-transport structures
US65936903 Sep 199915 Jul 20033M Innovative Properties CompanyLarge area organic electronic devices having conducting polymer buffer layers and methods of making same
US660313916 Abr 19995 Ago 2003Cambridge Display Technology LimitedPolymer devices
US662109829 Nov 199916 Sep 2003The Penn State Research FoundationThin-film transistor and methods of manufacturing and incorporating a semiconducting organic material
US6834251 *6 Dic 200121 Dic 2004Richard FletcherMethods and devices for identifying, sensing and tracking objects over a surface
US685258327 Jun 20018 Feb 2005Siemens AktiengesellschaftMethod for the production and configuration of organic field-effect transistors (OFET)
US6888509 *21 Mar 20013 May 2005Mikoh CorporationTamper indicating radio frequency identification label
US69039585 Sep 20017 Jun 2005Siemens AktiengesellschaftMethod of writing to an organic memory
US696048929 Ago 20011 Nov 2005Siemens AktiengesellschaftMethod for structuring an OFET
US200100261871 Mar 20014 Oct 2001Satoru OkuBooster, IC card having the same, and electronic equipment having the same
US2001004608130 Ene 200129 Nov 2001Naoyuki HayashiSheet-like display, sphere-like resin body, and micro-capsule
US2002001891111 May 199914 Feb 2002Mark T. BerniusElectroluminescent or photocell device having protective packaging
US20020021218 *31 Jul 200121 Feb 2002An QiuIntegrated hybrid electronic article surveillance marker
US200200222842 Feb 199921 Feb 2002Alan J. HeegerVisible light emitting diodes fabricated from soluble semiconducting polymers
US2002002539119 Oct 200128 Feb 2002Marie AngelopoulosPatterns of electrically conducting polymers and their application as electrodes or electrical contacts
US2002005332014 Dic 19999 May 2002Gregg M. DuthalerMethod for printing of transistor arrays on plastic substrates
US2002005683914 May 200116 May 2002Pt Plus Co. Ltd.Method of crystallizing a silicon thin film and semiconductor device fabricated thereby
US200200683924 Abr 20016 Jun 2002Pt Plus Co. Ltd.Method for fabricating thin film transistor including crystalline silicon active layer
US200201300422 Mar 200019 Sep 2002Moerman Piet H.C.Combined lancet and electrochemical analyte-testing apparatus
US20020160786 *9 Abr 200231 Oct 2002Manfred RietzlerSelective metal removal process for metallized retro-reflective and holographic films and radio frequency devices made therewith
US2002017089721 May 200121 Nov 2002Hall Frank L.Methods for preparing ball grid array substrates via use of a laser
US200201956448 Jun 200126 Dic 2002Ananth DodabalapurOrganic polarizable gate transistor apparatus and method
US2003005998721 Jun 200227 Mar 2003Plastic Logic LimitedInkjet-fabricated integrated circuits
US2003007050015 Oct 200117 Abr 2003Yu-Nan HungDrive gear shaft structure of a self-moving type
US2003011257626 Sep 200219 Jun 2003Brewer Peter D.Process for producing high performance interconnects
US2003014180730 Ene 200231 Jul 2003Takeo KawaseDisplay device
US200301786203 Sep 200125 Sep 2003Adolf BerndsOrganic rectifier, circuit, rfid tag and use of an organic rectifier
US2004000217628 Jun 20021 Ene 2004Xerox CorporationOrganic ferroelectric memory cells
US2004000541830 Jun 20038 Ene 2004Gunter SchmidLaminate with an electrically conductive layer formed as an antenna structure
US2004001398217 Dic 200222 Ene 2004Massachusetts Institute Of TechnologyFabrication of finely featured devices by liquid embossing
US2004002668917 Ago 200112 Feb 2004Adolf BerndsEncapsulated organic-electronic component, method for producing the same and use thereof
US2004007497413 Jul 200122 Abr 2004Fujio SenbaRfid tag housing structure, rfid tag installation structure and rfid tag communication method
US200400846704 Nov 20026 May 2004Tripsas Nicholas H.Stacked organic memory devices and methods of operating and fabricating
US200402113294 Sep 200228 Oct 2004Katsuyuki FunahataPattern forming method and pattern forming device
US200402330652 Feb 200425 Nov 2004Freeman Jeffrey R.Package location system
US200402564676 Sep 200223 Dic 2004Wolfgang ClemensElectronic unit, circuit design for the same, and production method
CN1482705A30 Jun 200317 Mar 2004因芬尼昂技术股份公司Laminate with an electrically conductive layer formed as an antenna structure
DE2102735B221 Ene 197110 May 1979Transformatoren Union Ag, 7000 StuttgartMill, eg for grinding plastics fillers - with electric circuit for controlling the throughput of the mill
DE3338597A124 Oct 19832 May 1985Gao Ges Automation OrgDatentraeger mit integriertem schaltkreis und verfahren zur herstellung desselben
DE4103675C27 Feb 199121 Oct 1993Telefunken MicroelectronSchaltung zur Spannungsüberhöhung von Wechselspannungs-Eingangssignalen
DE4243832A123 Dic 199230 Jun 1994Daimler Benz AgTastsensoranordnung
DE4312766C220 Abr 199327 Feb 1997Telefunken MicroelectronSchaltung zur Spannungsüberhöhung
DE4401089A115 Ene 199420 Jul 1995Cubit Electronics GmbhContactless chip card casing with antenna screen
DE10006257B411 Feb 200029 Jun 2006Ibm Corp.Dünnfilmtransistoren mit organisch-anorganischen Hybridmaterialien als halbleitende Kanäle
DE10012204A113 Mar 200020 Sep 2001Siemens AgElectronic postage stamp for identifying postal articles
DE10033112C27 Jul 200014 Nov 2002Siemens AgVerfahren zur Herstellung und Strukturierung organischer Feldeffekt-Transistoren (OFET), hiernach gefertigter OFET und seine Verwendung
DE10043204A11 Sep 20004 Abr 2002Siemens AgOrganischer Feld-Effekt-Transistor, Verfahren zur Strukturierung eines OFETs und integrierte Schaltung
DE10045192A113 Sep 20004 Abr 2002Siemens AgOrganischer Datenspeicher, RFID-Tag mit organischem Datenspeicher, Verwendung eines organischen Datenspeichers
DE10047171A122 Sep 200018 Abr 2002Siemens AgElectrode and/or conductor track used for components of OFETs and OLEDs is produced by treating an organic functional polymer with a chemical compound
DE10058559A124 Nov 200029 May 2002Interactiva Biotechnologie GmbSystem for distribution of refrigerated goods has communication network connecting supplier to local storage areas and hence to customers
DE10061297C28 Dic 200028 May 2003Siemens AgVerfahren zur Sturkturierung eines OFETs
DE10117663B49 Abr 20012 Sep 2004Samsung SDI Co., Ltd., SuwonVerfahren zur Herstellung von Matrixanordnungen auf Basis verschiedenartiger organischer leitfähiger Materialien
DE10120686A127 Abr 20017 Nov 2002Siemens AgVerfahren zur Erzeugung dünner homogener Schichten mit Hilfe der Siebdrucktechnik, Vorrichtung zur Durchführung des Verfahren und ihre Verwendung
DE10120687A127 Abr 200131 Oct 2002Siemens AgEncapsulated organic-electronic circuit has electronic components especially made of organic material and arranged between at least two layers forming barrier
DE10141440A123 Ago 200113 Mar 2003Daimler Chrysler AgTripodegelenk
DE10151404A118 Oct 200115 May 2003Ivoclar Vivadent AgBehältnis
DE10151440C118 Oct 20016 Feb 2003Siemens AgOrganic electronic component for implementing an encapsulated partially organic electronic component has components like a flexible foil as an antenna, a diode or capacitor and an organic transistor.
DE10163267A121 Dic 20013 Jul 2003Giesecke & Devrient GmbhBanknotes incorporating an electronic, data containing, circuit and transceiver and a device for processing said notes ensure that banknote handling is greatly simplified
DE10209400A14 Mar 20022 Oct 2003Infineon Technologies AgTransponder circuit for a transponder has a rectifier circuit with a component that has a coating of organic material
DE10219905B43 May 200222 Jun 2011OSRAM Opto Semiconductors GmbH, 93055Optoelektronisches Bauelement mit organischen funktionellen Schichten und zwei Trägern sowie Verfahren zur Herstellung eines solchen optoelektronischen Bauelements
DE10229168A128 Jun 200229 Ene 2004Infineon Technologies AgLaminat mit einer als Antennenstruktur ausgebildeten elektrisch leitfähigen Schicht
DE10341962A111 Sep 200329 Abr 2004Atomic Austria GmbhElektronisches Überwachungssystem für eine aus mehreren Sportartikeln bestehende Sportartikelkombination und deren Anwendung
DE19506907A128 Feb 19955 Sep 1996Telefunken MicroelectronVoltage or current level input signal changing circuit for e.g. EEPROM
DE19610284A115 Mar 19967 Ago 1997Siemens AgTransponder antenna coil design
DE19629291A119 Jul 199623 Ene 1997Oki Electric Ind Co LtdEnergieversorgungsschaltung für einen Transponder, die mit geringer Leistung betreibbar ist
DE19816860A116 Abr 199818 Nov 1999Deutsche Telekom AgChipkarte, insbesondere Guthabenkarte
DE19851703A130 Oct 19984 May 2000Inst Halbleiterphysik GmbhElectronic structure, e.g. FET, is produced by plotting, spraying, spin coating or spreading of insulating, semiconducting and-or conductive layers onto a substrate
DE19852312A112 Nov 199820 May 1999Nintendo Co LtdTragbare Informationsverarbeitungseinheit
DE19918193A122 Abr 199925 Nov 1999Cambridge Display TechProducing a multicolor organic light emitting device incorporating light-emitting polymers
DE19921024C26 May 19998 Mar 2001Wolfgang EichelmannVideospielanlage
DE19933757A119 Jul 199925 Ene 2001Giesecke & Devrient GmbhManufacturing chip card with integral battery involves applying first conducting track structure, electrolyte and second conducting track structure to form opposite polarity electrodes
DE19935527A128 Jul 19998 Feb 2001Giesecke & Devrient GmbhAktive Folie für Chipkarten mit Display
DE19937262A16 Ago 19991 Mar 2001Siemens AgAnordnung mit Transistor-Funktion
DE20111825U120 Jul 200117 Ene 2002Lammering ThomasPrintmedium
DE69232740T215 Oct 19925 Dic 2002Motorola IncSpannungsvariabler kondensator
DE69519782T22 Oct 19952 Ago 2001News Datacom LtdSystem mit gesichertem Zugang
DE69913745T215 Dic 19997 Oct 2004Goodyear Tire & RubberRf transponder und verfahren zur steuerung der rf signalmodulation in einem passiven transponder
EP0108650A39 Nov 198312 Feb 1986Zytrex CorporationProgrammable mos transistor
EP0128529A36 Jun 198429 Jul 1987BASF AktiengesellschaftPressure switch
EP0268370A213 Oct 198725 May 1988Canon Kabushiki KaishaSwitching device
EP0268370A313 Oct 198731 May 1989Canon Kabushiki KaishaSwitching device
EP0350179B121 Jun 198919 Ene 1994Gec Avery LimitedManufacturing portable electronic tokens
EP0418504B124 Jul 19905 Abr 1995Matsushita Electric Industrial Co., Ltd.Organic semiconductor memory device having a MISFET structure and its control method
EP0442123A121 Dic 199021 Ago 1991Neste OyMethod for preparing electronic and electro-optical components and circuits based on conducting polymers
EP0460242B127 Dic 199017 Abr 1996Nippon Petrochemicals Co., Ltd.Electric element and method of controlling conductivity
EP0501456A226 Feb 19922 Sep 1992Sony CorporationVideo game computer provided with an optical disc drive
EP0501456A326 Feb 19929 Sep 1992Sony CorporationVideo game computer provided with an optical disc drive
EP0511807A127 Abr 19924 Nov 1992Gec Avery LimitedApparatus and sensor unit for monitoring changes in a physical quantity with time
EP0528662B114 Ago 19922 Nov 1995Kabushiki Kaisha ToshibaOrganic field effect transistor
EP0603939A214 Dic 199329 Jun 1994Philips Electronics N.V.N-type conductive polymer and method of preparing such a polymer
EP0615256B12 Mar 199423 Sep 1998Philips Electronics N.V.Method of manufacturing a pattern of an electrically conductive polymer on a substrate surface and method of metallizing such a pattern
EP0685985A231 May 19956 Dic 1995Hitachi Metals, Ltd.Piezoelectric loudspeaker and method for manufacturing the same
EP0690457B115 May 199522 Dic 1999Al-Coat Ltd.Polyaniline-containing solution, articles coated therewith, and methods for the preparation of same
EP0716458A228 Nov 199512 Jun 1996AT&T Corp.Method of making an organic thin film transistor, and article made by the method
EP0716458A328 Nov 199526 Nov 1997AT&T Corp.Method of making an organic thin film transistor, and article made by the method
EP0785578A27 Ene 199723 Jul 1997AT&T Corp.Circuit comprising complementary thin film transistors
EP0785578A37 Ene 199722 Abr 1998AT&T Corp.Circuit comprising complementary thin film transistors
EP0786820A323 Ene 19971 Jul 1998Motorola, Inc.Organic thin film transistor with enhanced carrier mobility
EP0962984A218 May 19998 Dic 1999Lucent Technologies Inc.Thin-film transistor monolithically integrated with an organic light-emitting diode
EP0962984A318 May 199912 Ene 2000Lucent Technologies Inc.Thin-film transistor monolithically integrated with an organic light-emitting diode
EP0966182B121 Ago 199826 Abr 2006Lg Electronics Inc.Method of fabricating organic electroluminescent display panel
EP0979715B121 Jul 199915 Ene 2003Adolf Illig Maschinenbau GmbH & Co. KGHeating device for heating thermoplastic plates and method for adjusting the temperature of this heating device
EP0981165A110 Ago 199923 Feb 2000Lucent Technologies Inc.Thin film transistors
EP0989614A23 Sep 199929 Mar 2000Sel Semiconductor Energy Laboratory Co., Ltd.TFT with an LDD structure and its manufacturing method
EP1048912B126 Abr 200016 Jun 2004Miele & Cie. KGRefrigerating apparatus and method for indicating germs
EP1052594A114 May 199915 Nov 2000Sokymat SaTransponder and molding die, and their method of manufacture
EP1065725A227 Jun 20003 Ene 2001Sel Semiconductor Energy Laboratory Co., Ltd.Method of manufacturing an electro-optical device
EP1065725A327 Jun 200019 May 2004Sel Semiconductor Energy Laboratory Co., Ltd.Method of manufacturing an electro-optical device
EP1083775B129 Mar 200013 Oct 2010Seiko Epson CorporationComposition comprising an organic electroluminescent material
EP1102335A26 Nov 200023 May 2001Lucent Technologies Inc.Thin film transistors
EP1103916A124 Nov 199930 May 2001Infineon Technologies AGIC-card
EP1104035A220 Nov 200030 May 2001Lucent Technologies Inc.Thin film transistors
EP1113502B129 Mar 200019 Sep 2007Seiko Epson CorporationMethod of manufacturing thin-film transistor
EP1134694A116 Mar 200019 Sep 2001Infineon Technologies AGDocument with integrated electronic circuit
EP1170851B13 Jul 200124 Feb 2010Texas Instruments Deutschland GmbhCircuit assembly for doubling the voltage of a battery
EP1224999A425 Sep 20002 May 2007Sumitomo Heavy IndustriesLaser drilling method and laser drilling device
EP1227434B18 Sep 20008 Nov 2006Rohm Co., Ltd.Communication device
EP1237207B11 Mar 20024 Ene 2012FUJIFILM CorporationMethod for producing organic thin film device
EP1296280A19 Sep 199826 Mar 2003Precision Dynamics CorporationRf-id tag with integrated circuit consisting of organic materials
EP1318084A428 Ago 200131 Mar 2004Nippon Oxygen Co LtdInsulated container
EP1422168B119 Nov 200315 Feb 2006G.D Societa' Per AzioniPackage of tobacco articles featuring a shoplifting marker
FR2793089B3 Título no disponible
GB723598A Título no disponible
GB2058462B Título no disponible
JP2969184B2 Título no disponible
JP03290976A Título no disponible
JP362065477A Título no disponible
JP2001085272A Título no disponible
JP2002183695A Título no disponible
JPS6265472A Título no disponible
TW517478B Título no disponible
WO2001047044A221 Dic 200028 Jun 2001Plastic Logic LimitedForming interconnects
WO2001047044A321 Dic 20006 Dic 2001Plastic Logic LtdForming interconnects
WO2001073109A228 Mar 20014 Oct 2001Diabetes Diagnostics, Inc.Continuous process for manufacture of disposable electro-chemical sensor
WO2001073109A328 Mar 200120 Feb 2003Diabetes Diagnostics IncContinuous process for manufacture of disposable electro-chemical sensor
WO2002065557A129 Ene 200222 Ago 2002Siemens AktiengesellschaftOrganic field effect transistor with a photostructured gate dielectric, method for the production and use thereof in organic electronics
WO2002091495A27 May 200214 Nov 2002Coatue CorporationMolecular memory device
WO2002091495A37 May 200221 Ago 2003Coatue CorpMolecular memory device
WO2002095805A222 May 200228 Nov 2002Plastic Logic LimitedLaser parrering of devices
WO2002095805A322 May 200223 Ene 2003Paul Alan CainLaser parrering of devices
WO2004042837A25 Nov 200321 May 2004Siemens AktiengesellschaftOrganic electronic component with high-resolution structuring and method for the production thereof
WO2004042837A35 Nov 20037 Oct 2004Wolfgang ClemensOrganic electronic component with high-resolution structuring and method for the production thereof
WO2004047144A213 Nov 20033 Jun 2004Polyic Gmbh & Co.KgOrganic electronic component comprising a structured, semi-conductive functional layer and a method for producing said component
WO2004047144A313 Nov 20032 Sep 2004Wolfgang ClemensOrganic electronic component comprising a structured, semi-conductive functional layer and a method for producing said component
WO2004047194A213 Nov 20033 Jun 2004Polyic Gmbh & Co.KgOrganic electronic component comprising the same organic material for at least two functional layers
WO2004047194A313 Nov 20032 Sep 2004Walter FixOrganic electronic component comprising the same organic material for at least two functional layers
Otras citas
1"Nachrichtentechnik 2 (Modulationsverfahren)" des Lehrstuhls fur Nachrichtentechnik der Technischen Universitat Munchen, 1989.
2Angelopoulos M et al., "In-Situ Radiation Induced Doping", Mol. Crystl. Liq. Cryst., 1990, vol. 189, pp. 221-225.
3Assadi A, et al:, Field-Effect Mobility of Poly (3-Hexylthiophene) Dept. of Physics and Measurement Technology, Received Mar. 3, 1998; accepted for Publication May 17, 1988.
4Bao, Z. et al. "Organic and Polymeric Materials for the Fabrications of Thin Film Field-Effect Transistors", paper presented at the meeting of American Chemical Society, Division of Polymer Chemistry, XX, XX, vol. 39, No. 1, Mar. 29, 1998.
5Bao, Z. et al., "High-Performance Plastic Transistors Fabricatecd by Printing Techniques", Chem. Mater vol. 9, No. 6, 1997, pp. 1299-1301.
6Baude P F et al, "Organic semiconductor RFID transponsers" International Electron Devices Metting 2003. IEDM. Technical Digest. Washington, DC, Dec. 8-10, 2003, New York NY, IEEE, US Dec. 8, 2003, pp. 191-194.
7Belloni, F. et al, "Parameters Optimization for Improved Dynamics of Voltage Multipliers for Space", 2004 35th Annual IEEE Electronics Specialists Conference, Aachen, Germany, 2004, pp. 439-442.
8Bonse M. et al., "Integrated a-Si:H/Pentacene Inorganic Organic Complementary Circuits" in IEEE, IEDM 98, pp. 249-252.
9Brabec, C.J. et al, "Photoinduced FT-IR spectroscopy and CW-photocurrent measurements of conjugated polymers and fullerenes blended into a conventional polymer matrix", Solar Energy Materials and Solar Cells, 2000 Elsevier Science V.V., pp. 19-33.
10Brabec, C.J. et al., "Photovoltaic properties of a conjugated polymer/methanofullerene composites embedded in a polystyrene matrix", Journal of Applied Physics, vol. 85, No. 9, 1999, pp. 6866-6872.
11Braun D., et al, "Visible light emission from semiconducting polymer diodes", American Institute of Physics, Applied Physics Letters 58, May 6, 1991, pp. 1982-1984.
12Brown, A.R. et al., "Field-effect transistors made from solution-processed organic semiconductors", Elsevier Science, S.A., Synthetic Metals 88 (1997) pp. 37-55.
13Brown, A.R., "Logic Gates Made from Polymer Transistors and Their Use in Ring Oscillators", Science, vol. 270, Nov. 10, 1995, pp. 972-974.
14Chen, Shiao-Shien et al:, "Deep Submicrometer Double-Gate Fully-Depleted SOI PMOS Devices: A Concise Short-Channel Effect Threshold Voltage Model Using a Quasi-2D Approadh", IEEE Transaction on Electron Devices, vol. 43, No. 9, Sep. 1996.
15Chen, X.L. et al., "Morphological and Transistor Studies of Organic Molecular Semiconductors with Anisotropic Electrical Characteristics", American Chemical Society, 2001, Chem. Mater. 2001, 13, 1341-1348.
16Clemens, W. et al., "Vom Organischen Transistor Zum Plastik-Chip," Physik Journal, V. 2, 2003, pp. 31-36.
17Collet J. et al:, Low Voltage, 30 NM Channel Length, Organic Transistors With a Self-Assembled Monolayer as Gate Insulating Films:, Applied Physics Letters, American Institute of Physics. New York, US, Bd 76, Nr. 14, Apr. 3, 2000, Seiten 1941-1943, XP000950589, ISSN:0003-6951, das ganze Dokument.
18Cox, Robert W. et al., "A Minimally Intrusive, Low Cost System for Determining Indoor Air Flow Patterns", Computers In Power Electronics, 2004. IEEE Workshop on Urbana, IL Aug. 15-18, 2004, Piscataway, NJ, IEEE, Aug. 15, 2004, pp. 63-68.
19Crone B. K. et al., "Design and Fabrication of Organic Complementary Circuits", J. Appl. Phys. vol. 89, May 2001, pp. 5125-5132.
20Crone, B. et al, "Large-scale complementary Integrated circuits based on Organic transistors", Nature, vol. 403, Feb. 3, 2000, pp. 521 -.
21Dai, L. et al, Photochemical Generation of Conducting Pattersn in Polybutadiene Films:, Macromolecules, vol. 29, No. 1, 1996, pp. 282-287, XP 001042019, the whole document.
22Dai, L. et al., "Conjugation of Polydienes by Oxidants Other Than Iodine", Elsevier Science S.A., Synthetic Metals 86 (1997) 1893-1894.
23Dai, L. et al., "I2-Doping" of 1,4-Polydienes*, Elsevier Science S.A., Synthetic Metals 69 (1995), pp. 563-566.
24De Leeuw C.M. et al., "Polymeric integrated circuits and light-emitting diodes", Electron Devices Meeting, 1997. Technical Digest, International, Washington, DC, USA Dec. 7-10, 1997, New York, NY, USA, IEEE, US Dec. 7, 1997.
25Dodabalapur, A. et al., Organic smart pixels, American Institute of Physics, Applied Physics Letters, vol. 73, No. 2, Jul. 13, 1998, pp. 142-144.
26Drury et al., "Low-Cost All-Polymer Integrated Circuits", American Institute of Physics, Applied Physics Letters, 1998, vol. 73, No. 1, pp. 108-110, Jul. 6, 1998.
27English translation of Office Action of corresponding Chinese Patent Application No. 200580034556.1.
28Ficker, J. et al., "Dynamic and Lifetime Measurements of Polymer OFETS and Integrated Plastic Circuits, " Proc. of SPIE, v. 466, 2001, pp. 95-102.
29Finkenzeller, Klaus, "RFID Handbook", Second Edition, Hauser Verlag Munchen, 2000, ISBN 3-446-21278-7 (relevant pages).
30Fix, W. et al., "Fast Polymer Integrated Circuits Based on a Polyfluorene Derivative", ESSDERC 2002, 2002, pp. 527-529.
31Fix, W., et al., "Fast polymer integrated circuits", American Institute of Physics, Applied Physics Letters, vol. 81, No. 89, Aug. 2002, pp. 1735-1737.
32Forrest et al.: "The Dawn of Organic Electronics", IEEE Spectrum, Aug. 2000, Seiten 29-34, XP002189000, IEEE Inc., New York, US ISSN:0018-9235, Seite 33, rechte Spalte, Zelle 58-Seite 34, linke Spalte, Zeile 24; Abbildung 5.
33Fraunhofer Magazin- Polytronic Chips Von der Rolle, Apr. 2001, pp. 8-13.
34Garbassi F., et al., "Bulk Modifications", Polymer Surfaces, John Wiley & Sons, 1998, pp. 289-300.
35Garnier et al., "Conjugated Polymers and Oligomers as Active Material for Electronic Devices", Synthetic Metals, vol. 28, 1989.
36Garnier F et al:, "Vertical Devices Architecture By Molding Of Organic-Based Thin Film Transistor", Applied Physics Letters, American Institute of Physics. XP000784120, issn: 0003-6951 abbildung 2.
37Garnier, F. et al, "All-Polymer Field-Effect Transistor Realized by Printing Techniques", Science, American Association for the Advancement of Science, US, vol. 265, Sep. 16, 1994, pp. 1684-1686.
38Gelinck, G.H. et al., "High-Performance All-Polymer Integrated Circuits", Applied Physics Letters, v. 77, 2000, pp. 1487-1489.
39Goncalves-Conto, Sylvie, et al., "Interface Morphology in Organic Light-Emitting Diodes", Advanced Materials 1999, vol. 11, No. 2, pp. 112-115.
40Goncalves—Conto, Sylvie, et al., "Interface Morphology in Organic Light-Emitting Diodes", Advanced Materials 1999, vol. 11, No. 2, pp. 112-115.
41Gosain, D.P., "Excimer laser crystallized poly-Si TFT's on plastic substrates", Second International Symposium on Laser Precision Microfabrication, May 16-18, 2001, Singapore, vol. 4426, pp. 394-400.
42Halls, J.J. M., et al., "Efficient photodiodes from interpenetrating polymer networks", Nature, vol. 376, Aug. 10, 1995, pp. 498-500.
43Harrop, Peter, "RFID in Packaging", "Pira on Printing", Pira International Copyr. 2002, ISNB 1858029457; PAELLA Project ACREO, dry phase patterning method; Antenna for EAS RFID, p. 49, fig. 6.2.
44Harsanyi G. et al, "Polytronics for biogtronics:unique possibilities of polymers in biosensors and BioMEMS", IEEE Polytronic 2002 Conference, Jun. 23, 2002, pp. 211-215.
45Hart, C.M. et al, "Low-cost all-polymer integrated circuits", Solid-State Circuits Conference, 1998. EXXCIRC '98 Proceedings of the 24th European, The Hague, The Netherlands Sep. 22-24, 1998, Piscataway, NJ, USA, IEEE, Sep. 22, 1998, pp. 30-34.
46Hebner, T.R. et al., Ink-jet printing of doped polymers for organic light emitting devices:, American Institute of Physics, Applied Physics Letters, vol. 72, No. 5, Feb. 2, 1998, pp. 519-521.
47Hergel, H. J.: "Pld-Programmiertechnologien", Elektronik, Franzis Verlag GMBH. Munchen, DE, Bd 41, Nr. 5, Mar. 3, 1992, Seiten 44-46, XP000293121, ISSN: 0013-5658, Abbildungen 1-3.
48Hwang J D et al:, "A Vertical Submicron Slc thin film transistor", Solid State Electronics, Elsevier Science Publishers, Barking, GB, Bd. 38, NR. 2, Feb. 1, 1995, Seiten 275-278, XP004014040, ISSN:0038-1101, Abbildung 2.
49IBM Technical Disclosure Bulletin, "Short-Channel Field-Effect Transistor", IBM Corp., New York, US, Bd. 32, Nr. 3A, Aug. 1, 1989, Seiten 77-78, XP000049357, ISSN:0018-8689, das ganze Dokument.
50Kawase, T., et al., "Inkjet Printed Via-Hole Interconnections and Resistors for All-Polymer Transistor Circuits", Advanced Materials 2001, 13, No. 21, Nov. 2, 2001, pp. 1601-1605.
51Kind, D., "Einfuhrung in die Hochspannungs-Versuchstechnik", Friedrich. Vieweg & Sohn, Braunschweig/Wiesbaden, pp. 16-21.
52Klauk, H. et al., "Fast Organic Thin Film Transistor Circuits", IEEE Electron Device Letters, vol. 20, No. 6, pp. 289-291.
53Klauk, H. et al., "Pentacene Thin Film Transistors and Inverter Circuits", 1997 International Exectron Devices Meeting Technical Digest, pp. 539-542, Dec. 1997.
54Knobloch, A. et al., "Printed Polymer Transistors", Proc. Polytronic, v. 84, 2001, pp. 84-89.
55Kobel W. et al., "Generation of Micropatterns in Poly (3-Methyl-Thiophene) Films Using Microlithography: A First Step in the Design of an All-Organic Thin-Film Transistor" Synthetic Metals, V. 22, 1988, pp. 265-271.
56Koezuka, H. et al., "Macromolecular Electronic Device", Mol. Cryst. Liq. Cryst. 1994, vol. 2555, pp. 221-230.
57Kuhlmann et al., "Terabytes in Plastikfolie", Organische Massenspeicher vor der Serienproduktion.
58Kumar, Anish et al:, "Kink-Free Polycrystalline Silicon Double-Gate Elevated-Channel Thin-Film Transistors", IEEE Transactions on Electron Devices, vol. 45, No. 12, Dec. 1998.
59Lidzey, D. G. et al., "Photoprocessed and Micropatterned Conjugated Polymer LEDs", Synthetic Metals, V. 82, 1996, pp. 141-148.
60Lowe, J. et al., "Poly (3-(2-Acetoxyethyl)Thiophene): A Model Polymer for Acid-Catalyzed Lithography", Synthetic Metals, Elsevier Sequoia, Lausanne, CH, Bd. 85, 1997, Seiten 1427-1430.
61Lu, Wen et al., "Use of Ionic Liquids for π-Conjugated Polymer Electrochemical Devices", Science, vol. 297, 2002, pp. 983-987/.
62Lucent Technologies, "Innovation marks significant milestone in the development of electronic paper", Cambridge, MA and Murray Hill, NJ, Nov. 20, 2000. XP-002209726.
63Manuelli, Alessandro et al., "Applicability of Coating Techniques for the Production of Organic Field Effect Transistors", IEEE Polytronic 2002 Conference, 2002, pp. 201-204.
64Marko, H., Vorlesungsmanuskript "Nachrichtentechnik 2 (Modulationsverfahren" des Lehrstuhls fur Nachrichtentechnik der Technischen Universitat Munchen, 1989.
65Miyamoto, Shoichi et al:, Effect of LDD Structure and Channel Poly-Si Thinning on a Gate-All-Around TFT (GAT) for SRAM's, IEEE Transactions on Electron Devices. vol. 46, No. 8, Aug. 1999.
66Nalwa, H.S., "Organic Conductive Molecules and Polymers", vol. 2, 1997, pp. 534-535.
67Oelkrug, D. et al., "Electronic spectra of self-organized oligothiophene films with ‘standing’ and ‘lying’ molecular units", Elsevier Science S.A., 1996, Thin Solid Films 284-270.
68Qiao, X. et al., "The FeCI3-doped poly3-alkithiophenes) in solid state", Elsevier Science, Synthetic Metals 122 (2001) pp. 449-454.
69Redecker, M. et al., "Mobility enhancement through homogeneous nematic alignment of a liquid-crystalline polyfluorene", 1999 American Institute of Physics, Applied Physics Letters, vol. 74, No. 10, pp. 1400-1402.
70Rogers J A et al:, "Low-Voltage 0.1 Mum Organic Transistors and Complementary Inverter Circuits Fabricated with a Low-Cost Form of Near-Field Photolithography", Applied Physics Letters, American Institute of Physics. New York, US, Bd. 75, Nr. 7, Aug. 16, 1999, Seiten 1010-1012, XP000934355, ISSN: 003-6951, das ganze Dokument.
71Rogers, J. A. et al:, "Printing Process Suitable for Reel-to-Reel Production of High-Performance Organic Transistors and Circuits", Advanced Materials, VCH, Verlagsgesellschaft, Weinheim, DE, Bd. 11, Nr. 9, Jul. 5, 1999, Seiten 741-745, P000851834, ISSN: 0935-9648, das ganze Dokument.
72Roman et al., "Polymer Diodes With High Rectification", Applied Physics Letters, vol. 75, No. 21, Nov. 22, 1999.
73Rost, Henning et al., "All-Polymer Organic Field Effect Transistors", Proc. Mat. Week, CD, 2001, pp. 1-6.
74Sandberg, H. et al, "Ultra-thin Organic Films for Field Effect Transistors", SPIE vol. 4466, 2001, pp. 35-43.
75Schoebel, "Frequency Conversion with Organic-On-Inorganic Heterostructured Diodes", Extended Abstracts of the International Conference on Solid State Devices and Materials, Sep. 1, 1997.
76Schrodner M. et al., "Plastic electronics based on Semiconducting Polymers", First International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics. Incorporating Poly, Pep & Adhesives in Electronics. Proceedings (Cat. No. 01TH8592), First International IEEE Conference on Polymers and Adhesives in Micr, Seitenn 91-94.
77Shaheen, S.E., et al., "Low band-gap polymeric photovoltaic devices", Synthetic Metals, vol. 121, 2001, pp. 1583-1584.
78Speakman, S.P. et al., High performance organic semiconducting thin films: Ink Jet printed polythophene [rr-P3HT], Organic Electronics 2 (2), 2001, pp. 65-73.
79Takashima, W. et al., Electroplasticity Memory Devices Using Conducting Polymers and Solid Polymer Electrolytes, Polymer International, Melbourne, 1992, pp. 249-253.
80U.S. Appl. No. 10/344,926, filed Feb. 12, 2004, Adolf Bernds et al.
81U.S. Appl. No. 10/344,926, filed Feb. 12, 2004, Adolf Bernds et al., See Disclosure Statements filed.
82U.S. Appl. No. 10/344,951, filed Feb. 12, 2004, Adolf Bernds et al.
83U.S. Appl. No. 10/380,113, filed Sep. 25, 2003, Adolf Bernds et al.
84U.S. Appl. No. 10/381,032, filed Feb. 12, 2004, Adolf Bernds et al.
85U.S. Appl. No. 10/433,961, filed Apr. 1, 2004, Wolfgang Clemens et al.
86U.S. Appl. No. 10/451,108, filed May 13, 2004, Mark Giles et al.
87U.S. Appl. No. 10/473,050, filed May 20, 2004, Adolf Bernds et al.
88U.S. Appl. No. 10/479,234, filed Dec. 30, 2004, Adolf Bernds et al.
89U.S. Appl. No. 10/479,238, filed Oct. 20, 2004, Adolf Bernds et al.
90U.S. Appl. No. 10/492, 922, filed Mar. 3, 2005, Erwann Buillet et al.
91U.S. Appl. No. 10/492,923, filed Dec. 23, 2004, Wolfgang Clemens et al.
92U.S. Appl. No. 10/508,737, filed May 19, 2005, Adolf Bernds et al.
93U.S. Appl. No. 10/517,750, filed Oct. 13, 2005, Wolfgang Clemens et al.
94U.S. Appl. No. 10/523,216, filed Feb. 2, 2006, Adolf Bernds et al.
95U.S. Appl. No. 10/523,487, filed Apr. 13, 2006, Wolfgang Clemens et al.
96U.S. Appl. No. 10/524,646, filed May 11, 2006, Walter Fix et al.
97U.S. Appl. No. 10/533,756, filed Jun. 8, 2006, Wolfgang Clemens et al.
98U.S. Appl. No. 10/534,678, filed Jun. 8, 2006, Wolfgang Clemens et al.
99U.S. Appl. No. 10/535,448, filed Jun. 8, 2006, W. Clemens et al.
100U.S. Appl. No. 10/535,449, filed Feb. 16, 2006, Walter Fix et al.
101U.S. Appl. No. 10/541,815, filed Jun. 8, 2006, Axel Gerlt et al.
102U.S. Appl. No. 10/541,956, Wolfgang Clemens et al.
103U.S. Appl. No. 10/541,957, filed Jul. 6, 2006, Walter Fix et al.
104U.S. Appl. No. 10/542,678, Adolf Bernds et al.
105U.S. Appl. No. 10/542,679, filed Mar. 16, 2006, Adolf Bernds et al.
106U.S. Appl. No. 10/543,561, Wolfgang Clemens et al.
107U.S. Appl. No. 10/562,869, Wolfram Glauert.
108U.S. Appl. No. 10/562,989, Jurgen Ficker et al.
109U.S. Appl. No. 10/568,730, Wolfgang Clemens et al.
110U.S. Appl. No. 10/569,233, Adolf Bernds et al.
111U.S. Appl. No. 10/569,763, Walter Fix et al.
112U.S. Appl. No. 10/570,571, Clemens et al.
113U.S. Appl. No. 10/585,775, Walter Fix et al.
114U.S. Appl. No. 11/574,139, Jurgen Ficker et al.
115U.S. Appl. No. 11/721,219, Wolfgang Clemens et al.
116U.S. Appl. No. 11/721,244, Robert Blache et al.
117U.S. Appl. No. 11/721,284, Markus Bohm et al.
118U.S. Appl. No. 11/722,457, Markus Bohm et al.
119U.S. Appl. No. 11/817,258, Andreas Ullmann et al.
120U.S. Appl. No. 11/817,329, Andreas Ullmann et al.
121Ullman, A. et al., "High Performance Organic Field-Effect Transistors and Integrated Inverters", Mat. Res. Soc. Symp. Proc., v. 665, 2001, pp. 265-270.
122Velu, G. et al. "Low Driving Voltages and Memory Effect in Organic Thin-Film Transistors With A Ferroelectric Gate Insulator", Applied Physics Letters, American Institute of Physics, New York, vo.l 79, No. 5, 2001, pp. 659-661.
123Wang, Hsing et al., "Conducting Polymer Blends: Polythiophene and Polypyrrole Blends with Polystyrene and Poly(bisphenol A carbonate)", Macromolecules, 1990, vol. 23, pp. 1053-1059.
124Wang, Yading et al., "Electrically Conductive Semiinterpenetrating Polymer Networks of Poly(3-octylthiophene)", Macromolecules 1992, vol. 25, pp. 3284-3290.
125Yu, G. et al., "Dual-function semiconducting polymer devices: Light-emitting and photodetecting diodes", American Institute of Physics, Applied Physics Letter 64, Mar. 21, 1994, pp. 1540-1542.
126Zangara L., "Metall Statt Halbleiter, Programmierung Von Embedded ROMS Ueber Die Metallisierungen", Elektronik, Franzis Verlag GmbH, Munchen, DE, vol. 47, No. 16, Aug. 4, 1998, pp. 52-55.
127Zheng, Xiang-Yang et al., "Electrochemical Patterning of the Surface of Insulators with Electrically Conductive Polymers", J. Electrochem. Soc., v. 142, 1995, pp. L226-L227.
128Zie Voor Titel Boek, d 2e Pagina,XP-002189001, p. 196-228.
Citada por
Patente citante Fecha de presentación Fecha de publicación Solicitante Título
US8098208 *26 May 200717 Ene 2012Polyic Gmbh & Co. KgAntenna configuration and use thereof
US910495228 Sep 201211 Ago 2015Omni-Id Cayman LimitedElectromagnetic radiation decoupler
US9208422 *29 Sep 20118 Dic 2015Tetra Laval Holdings & Finance S.A.Packaging material comprising magnetisable portions
US964624126 Jun 20159 May 2017Omni-Id Cayman LimitedElectromagnetic radiation decoupler
US20090231203 *26 May 200717 Sep 2009Jurgen FickerAntenna Configuration and Use Thereof
US20130228614 *29 Sep 20115 Sep 2013Tetra Laval Holdings & Finance S.A.Packaging material comprising magnetisable portions
Clasificación de EE.UU.340/572.1, 340/572.7
Clasificación internacionalG08B13/14
Clasificación cooperativaB65D2203/10, G06K19/07771, G06K17/0022, G06K19/07749
Clasificación europeaG06K19/077T, G06K17/00G, G06K19/077T5
Eventos legales
19 Jun 2007ASAssignment
18 Jul 2014REMIMaintenance fee reminder mailed
7 Dic 2014LAPSLapse for failure to pay maintenance fees
27 Ene 2015FPExpired due to failure to pay maintenance fee
Effective date: 20141207