US7848145B2 - Three dimensional NAND memory - Google Patents
Three dimensional NAND memory Download PDFInfo
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- US7848145B2 US7848145B2 US11/691,901 US69190107A US7848145B2 US 7848145 B2 US7848145 B2 US 7848145B2 US 69190107 A US69190107 A US 69190107A US 7848145 B2 US7848145 B2 US 7848145B2
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
- H01L29/7926—Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
Abstract
Description
Claims (13)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/691,901 US7848145B2 (en) | 2007-03-27 | 2007-03-27 | Three dimensional NAND memory |
PCT/US2008/003910 WO2008118435A1 (en) | 2007-03-27 | 2008-03-26 | Three dimensional nand memory and method of making thereof |
TW97110923A TWI424536B (en) | 2007-03-27 | 2008-03-26 | Three dimensional nand memory and method of making thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/691,901 US7848145B2 (en) | 2007-03-27 | 2007-03-27 | Three dimensional NAND memory |
Publications (2)
Publication Number | Publication Date |
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US20080239818A1 US20080239818A1 (en) | 2008-10-02 |
US7848145B2 true US7848145B2 (en) | 2010-12-07 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US11/691,901 Active 2028-06-09 US7848145B2 (en) | 2007-03-27 | 2007-03-27 | Three dimensional NAND memory |
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US (1) | US7848145B2 (en) |
Cited By (167)
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---|---|---|---|---|
US20100020617A1 (en) * | 2008-07-24 | 2010-01-28 | Dong-Yean Oh | Nonvolatile semiconductor device and memory system including the same |
US8187936B2 (en) | 2010-06-30 | 2012-05-29 | SanDisk Technologies, Inc. | Ultrahigh density vertical NAND memory device and method of making thereof |
US8193054B2 (en) | 2010-06-30 | 2012-06-05 | SanDisk Technologies, Inc. | Ultrahigh density vertical NAND memory device and method of making thereof |
US8198672B2 (en) | 2010-06-30 | 2012-06-12 | SanDisk Technologies, Inc. | Ultrahigh density vertical NAND memory device |
US20120153291A1 (en) * | 2010-12-20 | 2012-06-21 | Jin-Gyun Kim | Vertical Memory Devices Including Indium And/Or Gallium Channel Doping |
US8349681B2 (en) | 2010-06-30 | 2013-01-08 | Sandisk Technologies Inc. | Ultrahigh density monolithic, three dimensional vertical NAND memory device |
US8445347B2 (en) | 2011-04-11 | 2013-05-21 | Sandisk Technologies Inc. | 3D vertical NAND and method of making thereof by front and back side processing |
US8465906B2 (en) | 2011-04-06 | 2013-06-18 | Sandisk Technologies Inc. | Method and mask for enhancing the resolution of patterning 2-row holes |
US8614126B1 (en) | 2012-08-15 | 2013-12-24 | Sandisk Technologies Inc. | Method of making a three-dimensional memory array with etch stop |
US8658499B2 (en) | 2012-07-09 | 2014-02-25 | Sandisk Technologies Inc. | Three dimensional NAND device and method of charge trap layer separation and floating gate formation in the NAND device |
US20140097435A1 (en) * | 2010-08-31 | 2014-04-10 | Micron Technology, Inc. | NAND Memory Constructions and Methods of Forming NAND Memory Constructions |
US20140239376A1 (en) * | 2013-02-26 | 2014-08-28 | Gang Zhang | Vertical memory devices and methods of manufacturing the same |
US8828884B2 (en) | 2012-05-23 | 2014-09-09 | Sandisk Technologies Inc. | Multi-level contact to a 3D memory array and method of making |
US8847302B2 (en) | 2012-04-10 | 2014-09-30 | Sandisk Technologies Inc. | Vertical NAND device with low capacitance and silicided word lines |
US8878278B2 (en) | 2012-03-21 | 2014-11-04 | Sandisk Technologies Inc. | Compact three dimensional vertical NAND and method of making thereof |
US8884357B2 (en) | 2013-03-12 | 2014-11-11 | Sandisk Technologies Inc. | Vertical NAND and method of making thereof using sequential stack etching and landing pad |
US20140374688A1 (en) * | 2013-06-24 | 2014-12-25 | Sandisk 3D Llc | High Capacity Select Switches for Three-Dimensional Structures |
US8928061B2 (en) | 2010-06-30 | 2015-01-06 | SanDisk Technologies, Inc. | Three dimensional NAND device with silicide containing floating gates |
US8946023B2 (en) | 2013-03-12 | 2015-02-03 | Sandisk Technologies Inc. | Method of making a vertical NAND device using sequential etching of multilayer stacks |
US8987089B1 (en) | 2013-09-17 | 2015-03-24 | Sandisk Technologies Inc. | Methods of fabricating a three-dimensional non-volatile memory device |
US8987087B2 (en) | 2013-07-08 | 2015-03-24 | Sandisk Technologies Inc. | Three dimensional NAND device with birds beak containing floating gates and method of making thereof |
US9023719B2 (en) | 2013-09-17 | 2015-05-05 | Sandisk Technologies Inc. | High aspect ratio memory hole channel contact formation |
US20150131360A1 (en) * | 2013-11-08 | 2015-05-14 | Sandisk 3D Llc | Vertical 1t-1r memory cells, memory arrays and methods of forming the same |
US9093480B2 (en) | 2013-04-01 | 2015-07-28 | Sandisk Technologies Inc. | Spacer passivation for high aspect ratio etching of multilayer stacks for three dimensional NAND device |
US9099496B2 (en) | 2013-04-01 | 2015-08-04 | Sandisk Technologies Inc. | Method of forming an active area with floating gate negative offset profile in FG NAND memory |
US9105736B2 (en) | 2009-03-19 | 2015-08-11 | Samsung Electronics Co., Ltd. | Three-dimensional nonvolatile memory devices including interposed floating gates |
US9136130B1 (en) | 2014-08-11 | 2015-09-15 | Sandisk Technologies Inc. | Three dimensional NAND string with discrete charge trap segments |
US9159739B2 (en) | 2010-06-30 | 2015-10-13 | Sandisk Technologies Inc. | Floating gate ultrahigh density vertical NAND flash memory |
US9177966B1 (en) | 2014-07-08 | 2015-11-03 | Sandisk Technologies Inc. | Three dimensional NAND devices with air gap or low-k core |
US20150348984A1 (en) * | 2014-05-30 | 2015-12-03 | SanDisk Technologies, Inc. | Method of making a monolithic three dimensional nand string using a select gate etch stop layer |
US9224747B2 (en) | 2014-03-26 | 2015-12-29 | Sandisk Technologies Inc. | Vertical NAND device with shared word line steps |
US9230983B1 (en) | 2014-08-20 | 2016-01-05 | Sandisk Technologies Inc. | Metal word lines for three dimensional memory devices |
US9230974B1 (en) | 2014-08-26 | 2016-01-05 | Sandisk Technologies Inc. | Methods of selective removal of blocking dielectric in NAND memory strings |
US9230979B1 (en) | 2014-10-31 | 2016-01-05 | Sandisk Technologies Inc. | High dielectric constant etch stop layer for a memory structure |
US9230980B2 (en) | 2013-09-15 | 2016-01-05 | Sandisk Technologies Inc. | Single-semiconductor-layer channel in a memory opening for a three-dimensional non-volatile memory device |
US9230905B2 (en) | 2014-01-08 | 2016-01-05 | Sandisk 3D Llc | Trench multilevel contact to a 3D memory array and method of making thereof |
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