US7872251B2 - Formulations for voltage switchable dielectric material having a stepped voltage response and methods for making the same - Google Patents
Formulations for voltage switchable dielectric material having a stepped voltage response and methods for making the same Download PDFInfo
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- US7872251B2 US7872251B2 US11/903,820 US90382007A US7872251B2 US 7872251 B2 US7872251 B2 US 7872251B2 US 90382007 A US90382007 A US 90382007A US 7872251 B2 US7872251 B2 US 7872251B2
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- particles
- semiconductive
- voltage switchable
- switchable dielectric
- bandgap energy
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3148—Silicon Carbide layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/90—Bulk effect device making
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
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- Composite Materials (AREA)
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- Inorganic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Conductive Materials (AREA)
- Inorganic Insulating Materials (AREA)
- Organic Insulating Materials (AREA)
- Thermistors And Varistors (AREA)
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Abstract
Description
Claims (16)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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US11/903,820 US7872251B2 (en) | 2006-09-24 | 2007-09-24 | Formulations for voltage switchable dielectric material having a stepped voltage response and methods for making the same |
US12/953,309 US8163595B2 (en) | 2006-09-24 | 2010-11-23 | Formulations for voltage switchable dielectric materials having a stepped voltage response and methods for making the same |
US13/447,173 US8723153B2 (en) | 2006-09-24 | 2012-04-14 | Formulations for voltage switchable dielectric materials having a stepped voltage response and methods for making the same |
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US82674706P | 2006-09-24 | 2006-09-24 | |
US11/903,820 US7872251B2 (en) | 2006-09-24 | 2007-09-24 | Formulations for voltage switchable dielectric material having a stepped voltage response and methods for making the same |
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US12/953,309 Continuation US8163595B2 (en) | 2006-09-24 | 2010-11-23 | Formulations for voltage switchable dielectric materials having a stepped voltage response and methods for making the same |
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US12/953,309 Expired - Fee Related US8163595B2 (en) | 2006-09-24 | 2010-11-23 | Formulations for voltage switchable dielectric materials having a stepped voltage response and methods for making the same |
US13/447,173 Expired - Fee Related US8723153B2 (en) | 2006-09-24 | 2012-04-14 | Formulations for voltage switchable dielectric materials having a stepped voltage response and methods for making the same |
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US13/447,173 Expired - Fee Related US8723153B2 (en) | 2006-09-24 | 2012-04-14 | Formulations for voltage switchable dielectric materials having a stepped voltage response and methods for making the same |
Country Status (7)
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EP (1) | EP2084748A4 (en) |
JP (1) | JP2010521058A (en) |
KR (1) | KR20090055017A (en) |
CN (1) | CN101536190A (en) |
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Also Published As
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WO2008036423A3 (en) | 2008-07-31 |
EP2084748A2 (en) | 2009-08-05 |
WO2008036423A2 (en) | 2008-03-27 |
KR20090055017A (en) | 2009-06-01 |
US20100270588A1 (en) | 2010-10-28 |
US8163595B2 (en) | 2012-04-24 |
US8723153B2 (en) | 2014-05-13 |
JP2010521058A (en) | 2010-06-17 |
US20120202930A1 (en) | 2012-08-09 |
MY145875A (en) | 2012-05-15 |
US20110062388A1 (en) | 2011-03-17 |
EP2084748A4 (en) | 2011-09-28 |
CN101536190A (en) | 2009-09-16 |
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