US7903712B2 - Method for reducing capacitance and improving high frequency performance in vertical cavity surface emitting lasers (VCSELs) - Google Patents
Method for reducing capacitance and improving high frequency performance in vertical cavity surface emitting lasers (VCSELs) Download PDFInfo
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- US7903712B2 US7903712B2 US10/936,218 US93621804A US7903712B2 US 7903712 B2 US7903712 B2 US 7903712B2 US 93621804 A US93621804 A US 93621804A US 7903712 B2 US7903712 B2 US 7903712B2
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- 238000000034 method Methods 0.000 title abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 23
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- 239000011800 void material Substances 0.000 claims abstract 2
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000002955 isolation Methods 0.000 claims description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 3
- 238000009825 accumulation Methods 0.000 claims description 3
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
- H01S5/18366—Membrane DBR, i.e. a movable DBR on top of the VCSEL
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/12—Generating the spectrum; Monochromators
- G01J3/26—Generating the spectrum; Monochromators using multiple reflection, e.g. Fabry-Perot interferometer, variable interference filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
Definitions
- This invention is directed to an etch process that removes the semiconducting layers that would normally be implanted through.
- An etch tunnel is created in single or multiple locations by a combination of well known dry and wet etch processes.
- the etch tunnels physically and electrically isolate the device active area from the sources of parasitic capacitance.
- An electrical test measuring the current between the areas separated by etch is performed to assure that all the material has been removed.
- An additional capacitance measurement may be performed to confirm the results of the current measurement. Therefore, the laser head is fully electrically isolated from the tuning pad and the bonding pad and their respective contributions to the device capacitance are removed.
- Yet another object of the present invention is to ensure that a dry etch and a wet etch are both employed to achieve electrical isolation.
- FIG. 5 is a top view of the device of this invention showing the etched areas.
- the size of the active head 28 can be tailored to suit the specific device requirements. Additionally, a current confinement layer 54 may be employed in laser applications.
- the layer 54 is comprised of group III-V material and another readily oxidizable element, preferably aluminum, or the layer 54 function may be accomplished by an ion implantation or similar process. If needed the heat spreader layer 56 may be utilized to reduce the heat accumulation in the device.
- the layer 56 is comprised of group III-V materials, such as GaAs, InP or similar.
- FIG. 8 Another embodiment of isolating the laser head from the laser drive pad is shown in FIG. 8 with the etch tunnel 72 .
- a person skilled in the art will easily determine proper etch formulations for the types of materials included in the layers to be etched. Both, dry etch and wet etch processes may be employed as a combination or individually. The etch methods described can be used to similarly reduce parasitic capacitance due to any other source on any other device.
Abstract
Description
Claims (19)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/936,218 US7903712B2 (en) | 2003-09-04 | 2004-09-07 | Method for reducing capacitance and improving high frequency performance in vertical cavity surface emitting lasers (VCSELs) |
US12/985,487 US8184668B2 (en) | 2003-09-04 | 2011-01-06 | Method for reducing capacitance and improving high frequency performance in vertical cavity surface emitting lasers (VCSELs) |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US50072803P | 2003-09-04 | 2003-09-04 | |
US10/936,218 US7903712B2 (en) | 2003-09-04 | 2004-09-07 | Method for reducing capacitance and improving high frequency performance in vertical cavity surface emitting lasers (VCSELs) |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/985,487 Division US8184668B2 (en) | 2003-09-04 | 2011-01-06 | Method for reducing capacitance and improving high frequency performance in vertical cavity surface emitting lasers (VCSELs) |
Publications (2)
Publication Number | Publication Date |
---|---|
US20100061417A1 US20100061417A1 (en) | 2010-03-11 |
US7903712B2 true US7903712B2 (en) | 2011-03-08 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/936,218 Active 2029-12-03 US7903712B2 (en) | 2003-09-04 | 2004-09-07 | Method for reducing capacitance and improving high frequency performance in vertical cavity surface emitting lasers (VCSELs) |
US12/985,487 Expired - Fee Related US8184668B2 (en) | 2003-09-04 | 2011-01-06 | Method for reducing capacitance and improving high frequency performance in vertical cavity surface emitting lasers (VCSELs) |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/985,487 Expired - Fee Related US8184668B2 (en) | 2003-09-04 | 2011-01-06 | Method for reducing capacitance and improving high frequency performance in vertical cavity surface emitting lasers (VCSELs) |
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US (2) | US7903712B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11133650B2 (en) * | 2018-08-22 | 2021-09-28 | Samsung Electronics Co., Ltd. | Back side emitting light source array device and electronic apparatus having the same |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8441081B2 (en) | 2008-07-22 | 2013-05-14 | William Jay Arora | Electro-mechanical switches and methods of use thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010017876A1 (en) * | 1999-06-04 | 2001-08-30 | Peter Kner | Tunable semiconductor laser system |
US20020131458A1 (en) * | 2001-03-15 | 2002-09-19 | Ecole Polytechnique Federale De Lausanne | Micro-electromechanically tunable vertical cavity photonic device and a method of fabrication thereof |
US20030039284A1 (en) * | 2001-08-16 | 2003-02-27 | Jun Zheng | VCSEL with heat-spreading layer |
US20040101009A1 (en) * | 2002-11-21 | 2004-05-27 | Honeywell International Inc. | Long wavelength VCSEL with tunnel junction, and implant |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5629951A (en) * | 1995-10-13 | 1997-05-13 | Chang-Hasnain; Constance J. | Electrostatically-controlled cantilever apparatus for continuous tuning of the resonance wavelength of a fabry-perot cavity |
US6628685B1 (en) * | 2000-08-21 | 2003-09-30 | Chan-Long Shieh | Method of fabricating long-wavelength VCSEL and apparatus |
-
2004
- 2004-09-07 US US10/936,218 patent/US7903712B2/en active Active
-
2011
- 2011-01-06 US US12/985,487 patent/US8184668B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010017876A1 (en) * | 1999-06-04 | 2001-08-30 | Peter Kner | Tunable semiconductor laser system |
US20020131458A1 (en) * | 2001-03-15 | 2002-09-19 | Ecole Polytechnique Federale De Lausanne | Micro-electromechanically tunable vertical cavity photonic device and a method of fabrication thereof |
US20030039284A1 (en) * | 2001-08-16 | 2003-02-27 | Jun Zheng | VCSEL with heat-spreading layer |
US20040101009A1 (en) * | 2002-11-21 | 2004-05-27 | Honeywell International Inc. | Long wavelength VCSEL with tunnel junction, and implant |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11133650B2 (en) * | 2018-08-22 | 2021-09-28 | Samsung Electronics Co., Ltd. | Back side emitting light source array device and electronic apparatus having the same |
US11652334B2 (en) | 2018-08-22 | 2023-05-16 | Samsung Electronics Co., Ltd. | Back side emitting light source array device and electronic apparatus having the same |
Also Published As
Publication number | Publication date |
---|---|
US20100061417A1 (en) | 2010-03-11 |
US8184668B2 (en) | 2012-05-22 |
US20110096801A1 (en) | 2011-04-28 |
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