US8263451B2 - Epitaxy profile engineering for FinFETs - Google Patents
Epitaxy profile engineering for FinFETs Download PDFInfo
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- US8263451B2 US8263451B2 US12/713,573 US71357310A US8263451B2 US 8263451 B2 US8263451 B2 US 8263451B2 US 71357310 A US71357310 A US 71357310A US 8263451 B2 US8263451 B2 US 8263451B2
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- epitaxy
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- semiconductor
- epitaxy layer
- etch
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- 238000000407 epitaxy Methods 0.000 title claims abstract description 102
- 239000004065 semiconductor Substances 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 45
- 238000000151 deposition Methods 0.000 claims abstract description 23
- 230000008021 deposition Effects 0.000 claims abstract description 22
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- 239000007789 gas Substances 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 8
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- 238000002955 isolation Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
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- 238000004519 manufacturing process Methods 0.000 description 5
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- 238000002513 implantation Methods 0.000 description 1
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- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
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- 229910052726 zirconium Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823431—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823821—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
Abstract
Description
Claims (20)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/713,573 US8263451B2 (en) | 2010-02-26 | 2010-02-26 | Epitaxy profile engineering for FinFETs |
KR1020100073601A KR101153154B1 (en) | 2010-02-26 | 2010-07-29 | Epitaxy Profile Engineering for FinFETs |
TW099141867A TWI420573B (en) | 2010-02-26 | 2010-12-02 | Method of forming integrated circuit structure |
CN2010106039670A CN102169853B (en) | 2010-02-26 | 2010-12-22 | Method of forming an integrated circuit structure |
US13/608,961 US9666691B2 (en) | 2010-02-26 | 2012-09-10 | Epitaxy profile engineering for FinFETs |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/713,573 US8263451B2 (en) | 2010-02-26 | 2010-02-26 | Epitaxy profile engineering for FinFETs |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US13/608,961 Division US9666691B2 (en) | 2010-02-26 | 2012-09-10 | Epitaxy profile engineering for FinFETs |
Publications (2)
Publication Number | Publication Date |
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US20110210404A1 US20110210404A1 (en) | 2011-09-01 |
US8263451B2 true US8263451B2 (en) | 2012-09-11 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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US12/713,573 Active 2030-07-17 US8263451B2 (en) | 2010-02-26 | 2010-02-26 | Epitaxy profile engineering for FinFETs |
US13/608,961 Active 2030-10-25 US9666691B2 (en) | 2010-02-26 | 2012-09-10 | Epitaxy profile engineering for FinFETs |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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US13/608,961 Active 2030-10-25 US9666691B2 (en) | 2010-02-26 | 2012-09-10 | Epitaxy profile engineering for FinFETs |
Country Status (4)
Country | Link |
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US (2) | US8263451B2 (en) |
KR (1) | KR101153154B1 (en) |
CN (1) | CN102169853B (en) |
TW (1) | TWI420573B (en) |
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US20130234204A1 (en) * | 2012-03-06 | 2013-09-12 | Samsung Electronics Co., Ltd. | Fin field effect transistors including multiple lattice constants and methods of fabricating the same |
US8609499B2 (en) * | 2012-01-09 | 2013-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFETs and the methods for forming the same |
US8759184B2 (en) | 2012-01-09 | 2014-06-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFETs and the methods for forming the same |
US8859379B2 (en) | 2013-03-15 | 2014-10-14 | International Business Machines Corporation | Stress enhanced finFET devices |
US20140308782A1 (en) * | 2013-04-15 | 2014-10-16 | International Business Machines Corporation | Self-limiting selective epitaxy process for preventing merger of semiconductor fins |
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Also Published As
Publication number | Publication date |
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TW201137942A (en) | 2011-11-01 |
CN102169853B (en) | 2013-08-21 |
KR101153154B1 (en) | 2012-06-04 |
US9666691B2 (en) | 2017-05-30 |
TWI420573B (en) | 2013-12-21 |
US20110210404A1 (en) | 2011-09-01 |
KR20110098594A (en) | 2011-09-01 |
CN102169853A (en) | 2011-08-31 |
US20130001705A1 (en) | 2013-01-03 |
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