US8338297B2 - Selective metal deposition over dielectric layers - Google Patents
Selective metal deposition over dielectric layers Download PDFInfo
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- US8338297B2 US8338297B2 US13/466,349 US201213466349A US8338297B2 US 8338297 B2 US8338297 B2 US 8338297B2 US 201213466349 A US201213466349 A US 201213466349A US 8338297 B2 US8338297 B2 US 8338297B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
Abstract
Description
Claims (9)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/466,349 US8338297B2 (en) | 2005-08-05 | 2012-05-08 | Selective metal deposition over dielectric layers |
US13/686,107 US9269586B2 (en) | 2005-08-05 | 2012-11-27 | Selective metal deposition over dielectric layers |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/198,208 US7915735B2 (en) | 2005-08-05 | 2005-08-05 | Selective metal deposition over dielectric layers |
US13/043,680 US8183154B2 (en) | 2005-08-05 | 2011-03-09 | Selective metal deposition over dielectric layers |
US13/466,349 US8338297B2 (en) | 2005-08-05 | 2012-05-08 | Selective metal deposition over dielectric layers |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/043,680 Continuation US8183154B2 (en) | 2005-08-05 | 2011-03-09 | Selective metal deposition over dielectric layers |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/686,107 Continuation US9269586B2 (en) | 2005-08-05 | 2012-11-27 | Selective metal deposition over dielectric layers |
Publications (2)
Publication Number | Publication Date |
---|---|
US20120220126A1 US20120220126A1 (en) | 2012-08-30 |
US8338297B2 true US8338297B2 (en) | 2012-12-25 |
Family
ID=37718172
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/198,208 Active 2028-11-28 US7915735B2 (en) | 2005-08-05 | 2005-08-05 | Selective metal deposition over dielectric layers |
US13/043,680 Active US8183154B2 (en) | 2005-08-05 | 2011-03-09 | Selective metal deposition over dielectric layers |
US13/466,349 Active US8338297B2 (en) | 2005-08-05 | 2012-05-08 | Selective metal deposition over dielectric layers |
US13/686,107 Active 2025-09-11 US9269586B2 (en) | 2005-08-05 | 2012-11-27 | Selective metal deposition over dielectric layers |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/198,208 Active 2028-11-28 US7915735B2 (en) | 2005-08-05 | 2005-08-05 | Selective metal deposition over dielectric layers |
US13/043,680 Active US8183154B2 (en) | 2005-08-05 | 2011-03-09 | Selective metal deposition over dielectric layers |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/686,107 Active 2025-09-11 US9269586B2 (en) | 2005-08-05 | 2012-11-27 | Selective metal deposition over dielectric layers |
Country Status (1)
Country | Link |
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US (4) | US7915735B2 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7915735B2 (en) * | 2005-08-05 | 2011-03-29 | Micron Technology, Inc. | Selective metal deposition over dielectric layers |
US8513966B2 (en) * | 2010-08-11 | 2013-08-20 | Intel Corporation | Probes formed from semiconductor region vias |
KR102578789B1 (en) | 2016-11-07 | 2023-09-18 | 삼성전자주식회사 | Method of fabricating a semiconductor device |
US10781520B2 (en) | 2017-12-04 | 2020-09-22 | Laurie Johansen | Metallic sheet with deposited structured images and method of manufacture |
US10999919B2 (en) * | 2019-07-11 | 2021-05-04 | Toyota Motor Engineering & Manufacturing North America, Inc. | Flexible electronic assembly for placement on a vehicle motor assembly |
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2005
- 2005-08-05 US US11/198,208 patent/US7915735B2/en active Active
-
2011
- 2011-03-09 US US13/043,680 patent/US8183154B2/en active Active
-
2012
- 2012-05-08 US US13/466,349 patent/US8338297B2/en active Active
- 2012-11-27 US US13/686,107 patent/US9269586B2/en active Active
Patent Citations (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5308796A (en) * | 1991-09-30 | 1994-05-03 | At&T Bell Laboratories | Fabrication of electronic devices by electroless plating of copper onto a metal silicide |
US5907790A (en) * | 1993-07-15 | 1999-05-25 | Astarix Inc. | Aluminum-palladium alloy for initiation of electroless plating |
US6037664A (en) | 1997-08-20 | 2000-03-14 | Sematech Inc | Dual damascene interconnect structure using low dielectric constant material for an inter-level dielectric layer |
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US20060022228A1 (en) | 2004-07-29 | 2006-02-02 | Semiconductor Leading Edge Technologies, Inc. | Method of manufacturing silicon nitride film, method of manufacturing semiconductor device, and semiconductor device |
US20060043510A1 (en) | 2004-07-30 | 2006-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
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US20060170114A1 (en) * | 2005-01-31 | 2006-08-03 | Chao-Yuan Su | Novel method for copper wafer wire bonding |
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US7915735B2 (en) * | 2005-08-05 | 2011-03-29 | Micron Technology, Inc. | Selective metal deposition over dielectric layers |
Also Published As
Publication number | Publication date |
---|---|
US20070032069A1 (en) | 2007-02-08 |
US9269586B2 (en) | 2016-02-23 |
US20120220126A1 (en) | 2012-08-30 |
US8183154B2 (en) | 2012-05-22 |
US7915735B2 (en) | 2011-03-29 |
US20110159688A1 (en) | 2011-06-30 |
US20130084699A1 (en) | 2013-04-04 |
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